Substrate processing apparatus employing double bellows using RF filter

Abstract

Presented is a substrate processing apparatus employing a double bellows using an RF filter to maximally reduce RF noise applied to an electronic device. The apparatus comprises: a dual flexible unit operated by a first moving unit and a second moving unit and having a double bellows for controlling the vertical movement of a substrate chuck and a lower container; and an RF filter unit connected to a power line connected to a heater connector extending from a heating element that heats the substrate chuck.

Description

Substrate processing device using a double bellows with an RF filter

[0001] The present invention relates to a substrate processing device, and more specifically, to a substrate processing device using a double bellows that enables smooth operation of the processing device by using an RF filter that removes RF noise.

[0002] Substrate processing equipment manufactures various thin films on substrates such as semiconductor wafers and glass substrates. In particular, plasma can be used to lower process temperatures and increase deposition rates. Plasma uses active species such as radicals and ions to perform micro-processing, such as etching, on the substrate surface. These processing equipment requires precise control of process variables within the chamber, such as gas flow, temperature distribution, and plasma state, to achieve the desired conditions. However, substrate entrances and exits are formed on some of the chamber's sidewalls, which cause asymmetry in the gas flow and temperature distribution within the chamber. This asymmetry results in uneven film thickness and quality, deteriorating the physical properties of various devices.

[0003] Korean Patent No. 10-2317402 proposes a substrate processing device using a double bellows that accurately moves the internal container up and down and prevents the substrate chuck from shaking during the vertical movement. Conventionally, the heater power line that supplies power to the heater that heats the substrate chuck passes through the inside of the processing device, and an RF filter that removes RF noise is placed outside the processing device. In this case, various electronic devices installed in the processing device may not operate properly due to RF noise radiated from the power line inside the processing device. Nevertheless, since the RF filter that removes the RF noise is placed outside the processing device, it is difficult to remove the RF noise inside the processing device.

[0004] The problem to be solved by the present invention is to provide a substrate processing device using a double bellows using an RF filter that minimizes RF noise applied to electronic devices.

[0005] A substrate processing device using a double bellows using an RF filter for solving the problem of the present invention includes a lower container built into a chamber, a substrate chuck installed inside the lower container, a first moving unit disposed at the lower portion of the lower container and moving the substrate chuck up and down, a second moving unit disposed at the lower portion of the lower container and moving the lower container up and down, and a double expansion unit provided with a double bellows that operates by the first moving unit and the second moving unit and controls the vertical movement of the substrate chuck and the lower container. At this time, an RF filter unit connected to a power line connected to a heater connector extended from a heating element that heats the substrate chuck is included.

[0006] In the device of the present invention, the RF filter unit includes a filter connector, and the power line is located between the heater connector and the filter connector. The RF filter unit includes a fastener, and the fastener is fixed to a second flange of the second moving unit. The RF filter unit may be fixed to the second moving unit. The power line may be a conductive line made of a conductive material, and a shielding material that shields electromagnetic waves may be applied thereto. The power line may be housed in an insulating package made of an insulating material, and the power line may be separated by the insulating package. A conductive powder may be mixed into the insulating package.

[0007] According to the substrate processing device using a double bellows RF filter of the present invention, by installing an RF filter inside the processing device, RF noise applied to electronic devices is reduced to the maximum extent, thereby smoothly processing the substrate using the double bellows.

[0008] Figure 1 is a front view drawing to explain a substrate processing device according to the present invention.

[0009] Figure 2 is a drawing of Figure 1 viewed from the back.

[0010] Fig. 3 is a perspective view for explaining the RF filter section of Fig. 1.

[0011] Fig. 4 is a drawing for explaining the operation of the RF filter unit of Fig. 1.

[0012] Figure 5 is a drawing showing a part of Figure 4 cut away.

[0013] Figures 6 and 7 are graphs showing the loss reduction value according to the frequency of the power line according to the present invention (a) and the loss reduction value according to the frequency of the conventional power line (b).

[0014] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The embodiments described below may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. In the drawings, exaggerated representations are used for convenience of explanation. Meanwhile, terms indicating positions such as "upper," "lower," and "front" are only related to those shown in the drawings. In practice, the processing device can be used in any optional direction, and the spatial direction during actual use varies depending on the orientation and rotation of the processing device.

[0015] An embodiment of the present invention proposes a substrate processing device using a double bellows that minimizes RF noise applied to electronic devices by installing an RF filter inside the processing device. To this end, the process of installing the RF filter inside the processing device will be described in detail, and the RF filter installed inside the processing device will be described in detail. The substrate processing device according to an embodiment of the present invention is used to form various thin films on substrates such as semiconductor wafers and glass substrates or to perform microprocessing to manufacture micro-elements, and also utilizes plasma.

[0016] FIG. 1 is a front view illustrating a substrate processing device (100) according to an embodiment of the present invention, and FIG. 2 is a rear view of FIG. 1 . For convenience of explanation, some parts have been removed and depicted. However, this is not a drawing in the strict sense, and there may be components not shown in the drawing for convenience of explanation.

[0017] Referring to FIGS. 1 and 2, the processing device (100) includes a substrate chuck (10), a double expansion and contraction unit (20), a first moving unit (30), a second moving unit (40), and an RF filter unit (50). The substrate chuck (10) is housed in a lower container (11) and is positioned above the double expansion and contraction unit (20). A heating element (not shown) is provided inside the substrate chuck (10) to heat a substrate placed on the upper portion of the substrate chuck (10). The heating element may be made of, for example, an aluminum nitride material, and may be installed in various ways and structures, without being particularly limited thereto. In addition, the substrate chuck (10) may also be used as a lower electrode for forming plasma. For example, the substrate chuck (10) may be grounded and power may be applied to a showerhead, thereby forming plasma between the substrate chuck (10) and the showerhead.

[0018] The flow controller (13) controls the flow rate of the processing gas toward the chamber containing the substrate chuck (10) for cleaning, etc., and the cooling line (14) supplies cooling gas toward the chamber containing the substrate chuck (10) to cool the chamber containing the substrate chuck (10). In addition to the substrate chuck (10), the flow controller (13), the cooling line (14), etc., various elements may be added within the scope of the present invention.

[0019] The substrate chuck (10) rotates by a support shaft (24, see Fig. 4), and the support shaft (24) is inserted into a protective tube (12), and the protective tube (12) is fixed to a double expansion member (20). The double expansion member (20) includes a double bellows (21), a bellows fixing member (22), and a guide (23). The double expansion member (20) is expanded by first and second moving members (30, 40). The first moving member (30) includes a first flange (31), a first case (32), and a first driving member (33), and the second moving member (40) includes a second flange (41), a second case (42), and a second driving member (43). The first flange (31) is coupled with the first case (32), and the second flange (41) is coupled with the second case (42). The first moving part (30) induces the vertical movement of the substrate chuck (10), and the second moving part (40) induces the vertical movement of the lower container (11). The first and second cases (32, 42) can be connected by a floating joint (34) that moves between the second driving part (43) and the first case (32).

[0020] Regarding the operation of the double-extension part (20), reference will be made to the domestic patent registration case No. 10-2317402. However, some structural changes are made to the first driving part (33), such as being attached to the outside of the first case (32). The first driving part (33) is preferably a precision motor that performs precise control, such as a servo motor or a stepping motor. The servo motor is an electric motor that converts an input voltage into a rotation angle, and a two-phase AC or DC servo motor is used. The stepping motor is also called a pulse motor because it rotates by an angle proportional to a given number of pulses by giving a sequence to step-state pulses. Since the precision motor precisely controls the rotation and vertical movement of the substrate chuck (10), the shaking of the substrate chuck (10) can be minimized. The first driving part (33) is fixed to the first case (32).

[0021] The second driving unit (43) is not necessarily limited thereto, but is preferably a pneumatic cylinder that uses compressed air to induce a linear reciprocating motion of a piston installed in a cylinder. The movement speed of the piston is adjusted by adjusting the flow rate of compressed air supplied or discharged to the pneumatic cylinder. The pneumatic cylinder may be provided with a damper to block noise generated by rapid movement of the piston and induce smooth operation. Preferably, the second driving unit (43) may apply a 5-port valve that stably induces movement of the lower container (11), thereby fundamentally blocking the shaking of the substrate chuck (10) that causes the above loss. In order to fundamentally block the shaking of the substrate chuck (10), a speed controller having a meter-in or meter-out or a combination thereof may be employed on the ascending and descending sides.

[0022] The RF filter unit (50) is installed inside the second case (42) of the second moving unit (40). Specifically, the RF filter unit (50) is fixed to the second flange (41) coupled with the second case (42). The position of the RF filter unit (50) is selected based on the concept of appropriately controlling the operation of the substrate processing device (100) to which the double expansion unit (20) is applied and preventing RF noise generated from the power line applied to the substrate chuck (10) from having an effect. It is obvious that the RF filter unit (50) is not simply employed. Conventionally, the RF filter unit (50) is placed outside the substrate processing device (100). This will be described in detail later.

[0023] Fig. 3 is a perspective view for explaining the RF filter unit (50) of Fig. 1. At this time, the substrate processing device (100) is as described above.

[0024] According to FIG. 3, the RF filter unit (50) includes a filter body (51), a fastening unit (52), a filter connector (53), and a heater controller connector (54). The fastening unit (52) is fixed to one side of the filter body (51), and the filter connector (53) protrudes through the fastening unit (52) toward the substrate chuck (10). The heater controller connector (54) is fixed to the other side of the filter body (51) and is connected to a heater controller (not shown) that controls the operation of the heater. The RF filter reduces interference of RF noise generated from a power line that supplies power to the substrate chuck (10) with the operation of the electronic device of the substrate processing device (100). Any appropriate RF filter may be selected and applied within the scope of the present invention.

[0025] Fig. 4 is a drawing for explaining the operation of the RF filter unit (50) of Fig. 1, and Fig. 5 is a drawing expressing a part of Fig. 4 cut away. At this time, the substrate processing device (100) is as described above.

[0026] Referring to FIGS. 4 and 5, the fastening portion (52) is fastened to the second flange (41), and the RF filter portion (50) is fixed to the second case (42). Both sides of the power line (55) are respectively connected to the filter connector (53) and the heater connector (25). The heater connector (25) extends from the heating element that heats the substrate chuck (20). That is, the power line (55) is located between the filter connector (53) and the heater connector (25). Preferably, the distance between the substrate chuck (10) and the RF filter portion (50) can be reduced as much as possible to reduce RF noise. The power line (55) is built into an insulating package (56) made of an insulating material such as engineering plastic. The insulating package (56) is made of an outer shell (56a) and a partition wall (56b), and the partition wall (56b) separates the power line (55). The support shaft (24) and the insulation package (56) can be connected using a bracket (26). The connection of each of the power lines (55) and the filter connector (53) and the heater connector (25) can be appropriately made by forced fitting, etc.

[0027] The power line (55) may be coated with a shielding material for electromagnetic wave shielding on a conductive line made of a conductive material such as a copper alloy. For example, gold (Au) may be coated on a conductive line made of brass to minimize RF noise generated from the power line (55). In addition, conductive powder, for example, carbon powder, may be mixed into the outer shell (56a) of the insulating package (56) to further reduce electromagnetic wave emission. To prevent the conductive powder from coming into contact with the power line (55), the outer shell (56a) is divided into a layer where the conductive powder is present and a layer where the conductive powder is not present, and the layer where the conductive powder is not present is in contact with the power line (55).

[0028] Fig. 6 is a graph showing a loss reduction value (a) according to the frequency of a power line according to an embodiment of the present invention, and Fig. 7 is a graph showing a loss reduction value (b) according to the frequency of a conventional method. At this time, the RF filter unit (50) of the present invention is as described in Fig. 4, and the conventional RF filter unit is arranged outside the substrate processing device (100). Here, the loss reduction value was measured by receiving a modulated wave with a spectrum analyzer in contact with the power line, decomposing the sideband, and measuring the frequency spectrum.

[0029] Referring to FIGS. 6 and 7, the frequency-dependent loss reduction value (a) of the present invention was -55.34 dBm for M1 (13.560000 MHz), -75.48 dBm for M2 (27.120000 MHz), and -73.58 dBm for M3 (40.680000 MHz). In contrast, the frequency-dependent loss reduction value (b) of the conventional invention was -39.98 dBm for M1 (13.560000 MHz), -62.65 dBm for M2 (27.120000 MHz), and -67.34 dBm for M3 (40.640000 MHz). In other words, by placing the RF filter unit (50) inside the processing device (100) and directly connecting it to the heater connector (25), the RF noise caused by the power line (55) in the form of harmonic waves was reduced. In particular, it was drastically reduced from -39.98 dBm to -55.34 dBm at M1 (13.560000 MHz). When the RF noise is reduced, the influence of the RF noise on the electronic devices installed in the substrate processing device (100) is reduced.

[0030] Above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications are possible by a person having ordinary skill in the art within the scope of the technical idea of ​​the present invention.

[0031] *Explanation of symbols

[0032] 10; substrate chuck 11; lower container

[0033] 12; Protective tube 13; Flow controller

[0034] 14; Cooling line 20; Double elastic section

[0035] 21; Double bellows 22; Bellows fixing part

[0036] 23; Guide 24; Support axis

[0037] 25; Heater connector 26; Bracket

[0038] 30, 40; 1st and 2nd moving parts

[0039] 31, 42; first and second flanges

[0040] 32, 42; Cases 1 and 2

[0041] 33; 43; First and second driving units

[0042] 34; floating joint

[0043] 50; RF filter section 51; Filter body

[0044] 52; Connection part 53; Filter connector

[0045] 54; Heater controller connector 55; Power line

[0046] 56; Insulation package

Claims

1. Lower container built into the interior of the chamber; A substrate chuck installed inside the above lower container; A first moving part disposed at the lower part of the lower container and moving the substrate chuck up and down; A second moving part positioned at the bottom of the lower container and moving the lower container up and down; and It includes a double expansion part having a double bellows that operates by the first moving part and the second moving part and controls the up and down movement of the substrate chuck and the lower container. A substrate processing device using a double bellows, characterized by including an RF filter unit connected to a power line connected to a heater connector extended from a heating element that heats the substrate chuck.

2. A substrate processing device using a double bellows using an RF filter unit, characterized in that in the first paragraph, the RF filter unit includes a filter connector, and the power line is located between the heater connector and the filter connector.

3. A substrate processing device using a double bellows using an RF filter unit, characterized in that in the first paragraph, the RF filter unit includes a fixing unit, and the fixing unit is fixed to the second flange of the second moving unit.

4. A substrate processing device using a double bellows using an RF filter unit, characterized in that in the first paragraph, the RF filter unit is fixed to the second moving unit.

5. In the first paragraph, a substrate processing device using a double bellows RF filter section characterized in that a shielding material for shielding electromagnetic waves is applied to a conductive line made of a conductive material.

6. A substrate processing device using a double bellows RF filter section, characterized in that in the first paragraph, the power line is built into an insulating package made of an insulating material, and the power line is separated by a partition wall of the insulating package.

7. A substrate processing device using a double bellows, characterized in that in the 6th paragraph, a conductive powder is mixed into the outer skin of the insulating package.

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