Thin film formation method

Abstract

An embodiment of the present invention provides a method for forming a gallium nitride thin film on one or more substrates, arranged in an inner space of a chamber in which a gas spray unit is installed, by using the gas spray unit. The gas spray unit comprises: a first electrode provided with a base electrode and a protruding electrode that extends and protrudes below the base electrode; and a second electrode separately disposed below the protruding electrode, wherein the protruding electrode passes through a hole formed in the second electrode, a first gas flow path is formed inside the protruding electrode, and a second gas flow path is formed inside the first electrode so that gas can be sprayed above the second electrode. The method may comprise the steps of: using the first gas flow path to spray a gallium-containing source gas toward the one or more substrates; and using the second gas flow path to spray a nitrogen-containing reactant gas toward the substrates and using the potential difference between the first electrode and the second electrode to generate a hydrogen plasma and thereby form the gallium nitride thin film. Therefore, according to embodiments of the present invention, a gallium nitride thin film and a silicon carbide thin film that have high densities can be formed at low temperatures.

Description

Thin film formation method

[0001] The present invention relates to a method for forming a thin film, and more specifically, to a method for forming a thin film capable of forming a high-density gallium nitride thin film or silicon carbide thin film at a low temperature.

[0002] In forming a gallium nitride thin film and a silicon carbide thin film, the temperature inside the chamber is heated to a high temperature of 1000°C or higher to increase the film density.

[0003] However, when a chamber is heated to a high temperature of 1000°C or higher to form a gallium nitride or silicon carbide thin film, defects may occur in the underlying film. Furthermore, high temperatures can cause defects in the gallium nitride or silicon carbide thin film. These defects can degrade the electrical properties of semiconductor devices.

[0004] (Prior art document) (Patent document 1) Korean Patent Publication No. 10-2000-0068834

[0005] The present invention provides a thin film forming method capable of forming a high-density gallium nitride thin film, a silicon carbide thin film, a gallium arsenide thin film, and an aluminum gallium nitride thin film at low temperatures.

[0006] An embodiment of the present invention provides a method for forming a gallium nitride thin film on one or more substrates disposed in an internal space of a chamber in which a gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending protrudingly below the base electrode; a second electrode separately disposed below the protruding electrode, the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to inject gas above the second electrode; the method may include the steps of: injecting a gallium-containing source gas toward the one or more substrates using the first gas path; and injecting a nitrogen-containing reactant gas toward the substrates using the second gas path and forming hydrogen plasma using a potential difference between the first electrode and the second electrode, thereby forming the gallium nitride thin film.

[0007] The step of forming the hydrogen plasma includes a step of supplying a hydrogen-containing gas to the second gas path, and the nitrogen-containing reactant gas and the hydrogen-containing gas can pass through the separation space between the first electrode and the second electrode after passing through the second gas path.

[0008] In the step of injecting the gallium-containing source gas and the step of forming the gallium nitride thin film, the temperature inside the chamber can be controlled to 200°C to 500°C.

[0009] A method for forming a thin film according to an embodiment of the present invention may include a step of forming hydrogen plasma inside the chamber between the step of injecting a gallium-containing source gas toward the one or more substrates using the first gas path and the step of forming a gallium nitride thin film.

[0010] A method for forming a thin film according to an embodiment of the present invention may include, in the step of injecting a gallium-containing source gas toward the one or more substrates using the first gas path, a step of additionally injecting a doping material including at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

[0011] An embodiment of the present invention provides a method for forming a silicon carbide thin film on one or more substrates disposed in an internal space of a chamber in which a gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending protrudingly below the base electrode; a second electrode separately disposed below the protruding electrode, the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to inject gas above the second electrode; the method comprising the steps of: injecting a silicon-containing source gas toward the one or more substrates using the first gas path; injecting a carbon-containing reactant gas toward the substrates using the second gas path and forming a first hydrogen plasma using a potential difference between the first electrode and the second electrode, thereby forming an amorphous silicon carbide thin film; It may include a step of forming a second hydrogen plasma using the potential difference between the first electrode and the second electrode to crystallize the amorphous silicon carbide thin film.

[0012] The step of forming the first and second hydrogen plasmas includes a step of supplying a hydrogen-containing gas to the second gas path, and the carbon-containing reactant gas and the hydrogen-containing gas can pass through the separation space between the first electrode and the second electrode after passing through the second gas path.

[0013] In the step of injecting the silicon-containing source gas, the step of forming the amorphous silicon carbide thin film, and the step of crystallizing the amorphous silicon carbide thin film, the temperature inside the chamber can be controlled to 200°C to 500°C.

[0014] A method for forming a thin film according to an embodiment of the present invention may include a step of forming hydrogen plasma inside the chamber between the step of injecting a silicon-containing source gas toward the one or more substrates using the first gas path and the step of forming the amorphous silicon carbide thin film.

[0015] A method for forming a thin film according to an embodiment of the present invention may include, in the step of injecting a silicon-containing source gas toward the one or more substrates using the first gas path, a step of additionally injecting a doping material including at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

[0016] An embodiment of the present invention provides a method for forming a gallium arsenide thin film on one or more substrates disposed in an internal space of a chamber in which a gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending protrudingly below the base electrode; a second electrode separately disposed below the protruding electrode, the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to inject gas above the second electrode; the method may include the steps of: injecting a gallium-containing source gas toward the one or more substrates using the first gas path; and injecting an arsenic-containing reactant gas toward the substrates using the second gas path and forming hydrogen plasma using a potential difference between the first electrode and the second electrode, thereby forming the gallium arsenide thin film.

[0017] The step of forming the hydrogen plasma includes a step of supplying a hydrogen-containing gas to the second gas path, and the arsenic-containing reactant gas and the hydrogen-containing gas can pass through the separation space between the first electrode and the second electrode after passing through the second gas path.

[0018] In the step of injecting the gallium-containing source gas and the step of forming the arsenide gallium thin film, the temperature inside the chamber can be controlled to 200°C to 500°C.

[0019] A method for forming a thin film according to an embodiment of the present invention may include a step of forming hydrogen plasma inside the chamber between the step of injecting a gallium-containing source gas toward the one or more substrates using the first gas path and the step of forming the gallium arsenide thin film.

[0020] A method for forming a thin film according to an embodiment of the present invention may include, in the step of injecting a gallium-containing source gas toward the one or more substrates using the first gas path, a step of additionally injecting a doping material including at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

[0021] An embodiment of the present invention provides a method for forming an aluminum gallium nitride thin film on one or more substrates disposed in an internal space of a chamber in which a gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending protrudingly below the base electrode; a second electrode separately disposed below the protruding electrode, the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to inject gas above the second electrode; the method may include the steps of: injecting an aluminum and gallium-containing source gas toward the one or more plates using the first gas path; and forming a hydrogen plasma using a potential difference between the first electrode and the second electrode while injecting a nitrogen-containing reactant gas toward the substrate using the second gas path, thereby forming the aluminum gallium nitride thin film.

[0022] The step of forming the hydrogen plasma includes a step of supplying a hydrogen-containing gas to the second gas path, and the nitrogen-containing reactant gas and the hydrogen-containing gas can pass through the separation space between the first electrode and the second electrode after passing through the second gas path.

[0023] In the step of forming an aluminum gallium nitride thin film by injecting the aluminum and gallium-containing source gas, the temperature inside the chamber can be controlled to 200°C to 500°C.

[0024] A method for forming a thin film according to an embodiment of the present invention may include a step of forming hydrogen plasma inside the chamber between the step of injecting an aluminum and gallium-containing source gas toward the one or more plates using the first gas path and the step of forming the aluminum gallium nitride thin film.

[0025] A method for forming a thin film according to an embodiment of the present invention may include, in the step of injecting an aluminum and gallium-containing source gas toward the one or more plates using the first gas path, a step of additionally injecting a doping material including at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

[0026] According to embodiments of the present invention, high-density gallium nitride thin films, silicon carbide thin films, gallium arsenide thin films, and aluminum gallium nitride thin films can be formed at low temperatures. Accordingly, it is possible to suppress or prevent the gallium nitride thin films, silicon carbide thin films, gallium arsenide thin films, and aluminum gallium nitride thin films, and underlying films formed thereunder, from being damaged by high heat and causing defects.

[0027] FIG. 1 is a drawing showing a state in which a gallium nitride thin film is formed on a substrate using a method according to an embodiment of the present invention.

[0028] Figures 2 (a) and (b) are process diagrams conceptually illustrating a method for forming a gallium nitride thin film on a substrate using a method according to an embodiment of the present invention.

[0029] FIG. 3 is a schematic drawing of a first type of substrate processing device capable of forming a thin film using a method according to an embodiment of the present invention.

[0030] FIG. 4 is a schematic perspective view showing a substrate support part of the first type of substrate processing device illustrated in FIG. 3.

[0031] Fig. 5 is a side cross-sectional view showing a gas injection unit of the first type of substrate processing device illustrated in Fig. 3.

[0032] Fig. 6 is a schematic bottom view of a gas injection unit of the first type of substrate processing device illustrated in Fig. 3.

[0033] FIG. 7 is a schematic bottom view of a gas injection unit according to a modified example in the first type of substrate processing device illustrated in FIG. 3.

[0034] FIG. 8 is a schematic drawing of a second type of substrate processing device capable of forming a thin film using a method according to an embodiment of the present invention.

[0035] FIG. 9 is a drawing showing a state in which a silicon carbide thin film is formed on a substrate using a method according to an embodiment of the present invention.

[0036] Figures 10 (a) to (c) are process diagrams conceptually illustrating a method for forming a silicon carbide thin film on a substrate using a method according to an embodiment of the present invention.

[0037] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure complete disclosure of the present invention and to fully inform those skilled in the art of the scope of the invention. For the purpose of illustrating embodiments of the present invention, the drawings may be exaggerated.

[0038]

[0039] FIG. 1 is a drawing showing a state in which a gallium nitride thin film is formed on a substrate using a method according to an embodiment of the present invention.

[0040] Referring to FIG. 1, a gallium nitride thin film (200) may be formed on a substrate (100). The substrate (100) may be any one of a wafer, glass, and metal. When the substrate (100) is a wafer, the wafer may be any one of a silicon wafer, a silicon carbide wafer, and a gallium arsenide wafer, for example.

[0041] Referring to FIG. 1, the substrate (100) may have a predetermined film (hereinafter, a base film (110)) formed on at least one surface, and a gallium nitride thin film (200) may be formed on the base film (110). Here, the base film (110) is not particularly limited, but may be, for example, at least one of a metal film, an oxide film, a nitride film, and a carbide film.

[0042] The gallium nitride thin film (200) may be formed to cover the entire upper surface of the underlying film (110) as illustrated in FIG. 1. Of course, the present invention is not limited thereto, and the gallium nitride thin film (200) may be formed to expose a portion of the upper surface of the underlying film (110). That is, the gallium nitride thin film (200) may be formed in some areas of the upper surface of the underlying film (110), and the gallium nitride thin film (200) may not be formed in the remaining areas.

[0043] In the above, a case in which a gallium nitride thin film (200) is formed on a base film (110) formed on a substrate (100) has been described. However, the present invention is not limited thereto, and a gallium nitride thin film (200) may be formed directly on the substrate (100). That is, a gallium nitride thin film (200) may be formed on the substrate (100) without a separate base film (110) being formed.

[0044] The gallium nitride thin film (200) formed by the method according to the embodiment may be a component of a power semiconductor device or a field effect transistor. To explain with a more specific example, the gallium nitride thin film (200) according to the embodiment may be an active layer or a channel layer, which are components of a power semiconductor device.

[0045]

[0046] Figures 2 (a) and (b) are process diagrams conceptually illustrating a method for forming a gallium nitride thin film on a substrate using a method according to an embodiment of the present invention.

[0047] Hereinafter, a method for forming a gallium nitride thin film (200) on a substrate (100) will be described with reference to (a) and (b) of FIG. 2. At this time, forming a gallium nitride thin film (200) on a base film (110) formed on the substrate (100) will be described as an example.

[0048] A method for forming a gallium nitride thin film (200) may include a step of forming a gallium-containing thin film (210) on a substrate (100) by injecting a source gas containing gallium (Ga) (hereinafter, gallium-containing source gas) toward a substrate (100), and a step of forming a hydrogen plasma while injecting a reactant gas containing nitrogen (N) (hereinafter, nitrogen-containing reactant gas) to form a gallium nitride thin film (200).

[0049] For convenience of explanation, the step of forming hydrogen plasma by injecting nitrogen-containing reactant gas is described below as the ‘nitrogen-containing reactant gas injection step.’

[0050] The method for forming a gallium nitride thin film (200) is a gallium nitride thin film formation cycle (CY) GaN ) may be included. And the gallium nitride thin film formation cycle (CY) GaN ) may include a 'gallium-containing source gas injection step - nitrogen-containing reactant gas injection step'.

[0051] In addition, gallium nitride thin film formation cycle (CY GaN ) may include a purge step, i.e., a gallium nitride thin film formation cycle (CY GaN) may further include at least one of a purge step (first purge step) performed between the gallium-containing source gas injection step and the nitrogen-containing reactant gas injection step and a purge step (second purge step) performed after the nitrogen-containing reactant gas injection step is completed. Here, the purge step may mean supplying a purge gas into the interior of a chamber in which a substrate (100) is loaded and exhausting the purge gas through an exhaust port installed in the chamber.

[0052] Gallium nitride thin film formation cycle (CY) GaN ) includes a purge step, it can be performed in the order of 'gallium-containing source gas injection step - 1st purge step - nitrogen-containing reactant gas injection step - 2nd purge step'. At this time, the gallium nitride thin film formation cycle (CY GaN ) at least one of the first and second fuzzy steps may be omitted.

[0053] And, the gallium nitride thin film formation cycle (CY) as described above GaN ) can be performed n times (n: 1, 2, 3, …). That is, the method of forming a gallium nitride thin film (200) can be performed by performing one (n=1) or two or more (n ≥ 2) gallium nitride thin film formation cycles (CY GaN ) may be included. Here, 2 or more times may mean multiple times.

[0054]

[0055] FIG. 3 is a schematic drawing of a first type of substrate processing apparatus capable of forming a thin film using a method according to an embodiment of the present invention. FIG. 4 is a schematic perspective view illustrating a substrate support portion of the first type of substrate processing apparatus illustrated in FIG. 3. FIG. 5 is a side cross-sectional view illustrating a gas injection portion of the first type of substrate processing apparatus illustrated in FIG. 3. FIG. 6 is a schematic bottom view of the gas injection portion of the first type of substrate processing apparatus illustrated in FIG. 3.

[0056] Hereinafter, a first type of substrate processing device will be described with reference to FIGS. 3 to 6.

[0057] Referring to Fig. 3, a first type of substrate processing device (1) performs a processing process on a substrate (100). The substrate (100) may be any one of a wafer, glass, and metal. The first type of substrate processing device (1) may perform a deposition process for depositing a thin film on the substrate (100), an etching process for removing a portion of the thin film deposited on the substrate (100), etc.

[0058] Hereinafter, an example in which a first type substrate processing device (1) performs the deposition process will be described, but it will be obvious to those skilled in the art to which the present invention pertains to derive an example in which a first type substrate processing device (1) according to the present invention performs other processing processes, such as the etching process.

[0059] A first type substrate processing device (1) may include a chamber (2), a substrate support member (3), and a gas injection member (4). In addition, the first type substrate processing device (1) may include a heater (not shown) that heats the interior of the chamber. In this case, the heater may be connected to the chamber (2) or installed inside the chamber (2).

[0060] Referring to FIG. 3, the chamber (2) provides an internal space in which a thin film can be deposited on a substrate (100) or the substrate can be etched. Hereinafter, the internal space of the chamber (2) is referred to as a processing space (SP). In the processing space (SP), a processing process such as a deposition process or an etching process for the substrate (100) can be performed. The processing space (SP) can be arranged inside the chamber (2). An exhaust port (not shown) for exhausting gas from the processing space (SP) can be coupled to the chamber (2). The substrate support (3) and the gas injection unit (4) can be installed in the chamber (2), and the substrate support (3) and the gas injection unit (4) can be installed to be located inside the chamber (2).

[0061] Referring to Fig. 3, the substrate support (3) supports the substrate (100). The substrate support (3) can support a plurality of substrates (100), for example, six substrates (100). Accordingly, the first type of substrate processing device (1) can perform a processing process on a plurality of substrates (100) at a time. Accordingly, when a product is produced by depositing a thin film or performing etching on a substrate (100) using the first type of substrate processing device (1), there is an effect of improving productivity.

[0062] The above substrate support member (3) can be coupled to the chamber (2). The above substrate support member (3) can be placed inside the chamber (2).

[0063] Referring to Fig. 4, the substrate support (3) may include a support surface (31). The support surface (31) may be a surface of the substrate support (3) arranged to face the gas injection unit (4). When the substrate support (3) is arranged below the gas injection unit (4), the support surface (31) may correspond to an upper surface of the substrate support (3). The substrates (100) may be supported on the support surface (31).

[0064] The substrate support member (3) can support the substrates (100) in an outer region (33) disposed outside the central region (32). The outer region (33) can be disposed to surround the central region (32). Accordingly, the central region (32) can be disposed inside the outer region (33). When the central region (32) is formed in a circular shape, the outer region (33) can be formed in a circular ring shape surrounding the central region (32). The substrates (100) can be disposed to be spaced apart from each other along the outer region (33). In this case, the substrates (100) can be supported on the support surface (31) so as to be spaced apart from each other at the same angle with respect to the central axis (30) of the substrate support member (3) in the outer region (33). When the substrate support member (3) is rotated while the above processing is performed, the substrate support member (3) can be rotated around the central axis (30). When the support surface (31) is formed in a circular shape, the central axis (30) can correspond to the center of the support surface (31). Meanwhile, since the substrates (100) are supported by the support surface (31) in the outer region (33), the substrates (100) are not positioned in the central region (32).

[0065] In the above, it has been described that the substrate support member (3) supports six substrates. However, this is not limited to this, and the substrate support member (3) may support a variety of substrates (100) in numbers of two or more. In addition, the substrate support member (3) may also support one substrate (100).

[0066] The gas supply unit (40) stores gas and supplies the gas to the gas injection unit (4). That is, the gas supply unit (40) stores gas for forming a gallium nitride thin film (200) according to an embodiment of the present invention and supplies the gas to the gas injection unit (4).

[0067] Although one gas supply unit (40) is illustrated in FIG. 3, a plurality of gas supply units may be provided. The gas supply unit (40) may include a plurality of gas supply units that supply different types of gases to the gas injection unit (4). That is, the gas supply unit (40) may include a source gas supply unit that supplies a source gas to the gas injection unit (4), a reactant gas supply unit that supplies a reactant gas to the gas injection unit (4), and a hydrogen-containing gas supply unit that supplies a hydrogen-containing gas. In addition, the gas supply unit (40) may further include a discharge gas supply unit that supplies a discharge gas (hereinafter, referred to as discharge gas) and a purge gas supply unit that supplies a purge gas.

[0068] The gas supplied from the source gas supply unit may be a gallium (Ga)-containing source gas. More specifically, the gallium-containing source gas may be a gas containing trimethyl gallium (Ga(CH3)3) (TMGa). Of course, the gallium-containing source gas is not limited to the materials described above, and various gases containing gallium (Ga) may be used.

[0069] The gas supplied from the reactant gas supply unit may be a nitrogen (N)-containing reactant gas. More specifically, the nitrogen-containing reactant gas may be, for example, nitrogen (N) gas or a gas containing NH3. Of course, the nitrogen-containing reactant gas is not limited to the materials described above, and various gases containing nitrogen (N) may be used.

[0070] The gas supplied from the hydrogen-containing gas supply unit may be hydrogen (H)-containing gas. More specifically, the hydrogen-containing gas may be hydrogen (H) gas. In addition, the discharge gas and purge gas supplied from the discharge gas supply unit and the purge gas supply unit may be argon (Ar) gas.

[0071] In the above, it has been described that the gas supply unit (40) is provided with a nitrogen-containing reactant gas supply unit and a hydrogen-containing gas supply unit separately. However, the present invention is not limited thereto, and the gas supply unit may also include a mixed gas supply unit that supplies a mixed gas containing nitrogen and hydrogen. In this case, the mixed gas may be, for example, a gas containing NH3. Of course, the present invention is not limited thereto, and the mixed gas may be a gas in which a nitrogen-containing reactant gas and a hydrogen-containing gas are mixed, and the mixed gas supply unit may supply this mixed gas to the gas injection unit (4).

[0072] Referring to Fig. 3, the gas injection unit (4) injects gas toward the substrate support unit (3). The gas injection unit (4) may be connected to a gas supply unit (40). Accordingly, the gas injection unit (4) may inject gas supplied from the gas supply unit (40) toward the substrate support unit (3). The gas injection unit (4) may be coupled to the chamber (2) and installed to be located inside the chamber (2). The gas injection unit (4) may be arranged to face the substrate support unit (3). The processing space (SP) may be arranged between the gas injection unit (4) and the substrate support unit (3). The gas injection unit (4) may also be coupled to a lid. The lid is coupled to the chamber (2) to cover the upper portion of the chamber (2).

[0073] The above gas injection unit (4) may include a first gas path (41) and a second gas path (42).

[0074] The first gas path (41) is for injecting the first gas. One side of the first gas path (41) may be connected to the gas supply unit (40) via a pipe, hose, or the like. The other side of the first gas path (41) may be connected to the processing space (SP). Accordingly, the first gas supplied from the gas supply unit (40) may flow along the first gas path (41) and then be injected into the processing space (SP) through the first gas path (41). The first gas path (41) may function as a passage for the first gas to flow and also as an injection port for injecting the first gas into the processing space (SP).

[0075] The second gas passage (42) is for injecting the second gas. The second gas and the first gas may be different gases. For example, when the first gas is a gallium-containing source gas, the second gas may be a nitrogen-containing reactant gas and a hydrogen-containing gas. That is, the gallium-containing source gas may pass through the first gas passage (41), and the nitrogen-containing reactant gas and the hydrogen-containing gas may pass through the second gas passage (42). As another example, when the first gas is a gallium-containing source gas, the second gas may be a mixed gas containing nitrogen and hydrogen. In this case, the gallium-containing source gas may pass through the first gas passage (41), and the mixed gas may pass through the second gas passage (42). Of course, conversely, the second gas may be a gallium-containing source gas. In such cases, the first gas may be a nitrogen-containing reactant gas and a hydrogen-containing gas, or a mixed gas containing nitrogen and hydrogen.

[0076] The second gas path (42) may have one end connected to the gas supply unit (40) via a pipe, hose, or the like. The other end of the second gas path (42) may be connected to the processing space (SP). Accordingly, the second gas supplied from the gas supply unit (40) may flow along the second gas path (42) and then be injected into the processing space (SP) through the second gas path (42). The second gas path (42) may function as a passage for the second gas to flow and also as an injection port for injecting the second gas into the processing space (0).

[0077] The second gas path (42) and the first gas path (41) may be arranged to be spatially separated from each other. Accordingly, the second gas supplied from the gas supply unit (40) to the second gas path (42) can be injected into the processing space (SP) without passing through the first gas path (41). The first gas supplied from the gas supply unit (40) to the first gas path (41) can be injected into the processing space (SP) without passing through the second gas path (42). The second gas path (42) and the first gas path (41) can inject gases toward different parts of the processing space (SP).

[0078] Referring to Fig. 5, the gas injection unit (4) may include a first electrode (43) and a second electrode (44). The first electrode (43) may be disposed on the upper side of the substrate support member (3) so as to face the substrate support member (3). The first electrode (43) may be grounded, thereby functioning as a ground electrode. The first electrode (43) may include the first gas passage (41) and the second gas passage (42). Accordingly, the first electrode (43) may inject the first gas through the first gas passage (41) and the second gas through the second gas passage (42). The first gas path (41) and the second gas path (42) can be arranged to be spatially separated from each other inside the first electrode (43).

[0079] The first gas path (41) may include a first connection hole (411) connected to the gas supply unit (40) and a plurality of first injection holes (412) connected to the first connection hole (411). The first connection hole (411) and the first injection holes (412) may be formed inside the first electrode (43). One side of the first injection holes (412) may be connected to the first connection hole (411), and the other side may be connected to the processing space (SP). Accordingly, the first gas supplied by the gas supply unit (40) may flow along the first connection hole (411) and then be injected into the processing space (SP) through the first injection holes (412).

[0080] The second gas path (42) may include a second connection hole (421) connected to the gas supply unit (40) and a plurality of second injection holes (422) connected to the second connection hole (421). The second connection hole (421) and the second injection holes (422) may be formed inside the first electrode (43). One side of the second injection holes (422) may be connected to the second connection hole (421), and the other side may be connected to the processing space (SP). Accordingly, the second gas supplied by the gas supply unit (40) may flow along the second connection hole (421) and then be injected into the processing space (SP) through the second injection holes (422). That is, the second injection hole (422) of the second gas path (42) formed in the first electrode (43) injects gas toward the upper portion of the second electrode (44).

[0081] The first electrode (43) may include a base electrode (43a) extending in the direction in which the substrate support member (3) extends, and a protruding electrode (43b) extending downwardly from the lower surface of the base electrode (43a). The protruding electrode (43b) may have a shape extending from the lower surface of the base electrode (43a) in the direction in which the substrate support member (3) is positioned. A plurality of such protruding electrodes (43b) may be provided, and the plurality of protruding electrodes (43b) may be arranged to be spaced apart from each other.

[0082] When the first electrode (43) includes a base electrode (43a) and a protruding electrode (43b), each of the first connecting hole (411), the second connecting hole (421), and the second injection hole (422) may be provided in the base electrode (43a). At this time, the first and second connecting holes (411, 421) may have a shape extending in the direction in which the base electrode (43a) extends, for example. In addition, the second injection hole (422) may extend in the vertical direction, one end may be connected to the second connecting hole (421), and the other end may be connected to the processing space (SP). In addition, the first injection hole (412) of the first gas path (41) may be provided to extend from the base electrode (43a) to the protruding electrode (43b). That is, the first injection hole (412) can be formed by vertically penetrating the protruding electrode (43b), and one end in the extension direction can be connected to the first connection hole (411) and the other end can be connected to the processing space (SP). In other words, the first injection hole of the first gas path (41) is formed inside the protruding electrode (43b). Since the first connection hole (411) is formed in the base electrode (43a), the first injection hole (412) can be vertically penetrating a part of the base electrode (43a) and connected to the first connection hole (411).

[0083] The second electrode (44) may include a hole (44a) into which a protruding electrode (43b) may be inserted. The hole (44a) may be formed by penetrating the second electrode (44). This hole (44a) may function as a passage for passing gas discharged from the first electrode (43). The number of holes (44a) may be the same as that of the protruding electrodes (43b), and the holes (44a) may be formed at positions facing the protruding electrodes (43b). In addition, a protruding electrode (43b) may be inserted into each of a plurality of holes (44a). That is, the protruding electrode (43b) penetrates the hole (44a) formed in the second electrode (44). The inner diameter (or width) of the hole (44a) is larger than the diameter (or width) of the protruding electrode (43b), and the vertical length of the hole (44a) may be smaller than the vertical length of the protruding electrode (43b).

[0084] When the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) formed in the second electrode (44), the height of the lower surface of the protruding electrode (43b) is the same as the height of the lower surface of the second electrode (44). Accordingly, the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) are spaced apart from each other, and the spaced space is communicated with the second injection hole (422). That is, the second electrode (44) is separately disposed below the first electrode (43).

[0085] In addition, when the protruding electrode (43b) of the first electrode (43) is inserted into the hole (44a) of the second electrode (44), the outer surface of the protruding electrode (43b) is inserted so as to be spaced apart from the inner surface of the second electrode (44) surrounding the hole (44a). Accordingly, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the space between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44). In addition, the outer space of the protruding electrode (43b) in the hole (44a) is communicated with the processing space (SP). Therefore, the gas discharged from the second injection hole (422) can pass through the hole (44a) provided in the second electrode (44) and be injected toward the substrate support portion (3). That is, the second gas discharged from the second injection hole (422) can pass through the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44), and then pass through the hole (44a) provided in the second electrode (44) and be injected to the lower side of the hole (44a). At this time, when the second gas passes through the hole (44a), it passes along the outer space of the protruding electrode (43b).

[0086] An insulating member (not shown) for partial insulation may be disposed between the second electrode (44) and the first electrode (43). RF power may be applied to the second electrode (44). When the first electrode (43) is grounded and the RF power is applied to the second electrode (44), plasma may be generated. That is, plasma may be generated in the space between the first electrode (43) and the second electrode (44). More specifically, plasma may be generated in the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and in the hole (44a). In addition, the plasma thus formed may be used to activate gas, and the activated gas may be injected into the processing space (SP).

[0087] In the above, it was described that plasma is formed by grounding the first electrode (43) and applying RF power to the second electrode (44). However, this is not limited to this, and plasma may be formed by applying RF power to the first electrode (43) and grounding the second electrode (44). In addition, plasma may be formed by applying a positive (+) voltage to one of the first electrode (43) and the second electrode (44) and connecting a negative (-) electrode to the other electrode.

[0088] The gas injection unit (4) injects gas toward the substrate support unit (3). At this time, the gas injection unit (4) may be provided so as to inject gas only toward the outer region (33) of the support surface (31) of the substrate support unit (3). In this case, the gas injection unit (4) is provided so as not to inject gas toward the central region (32) of the substrate support unit (3). The gas injection unit (4) may be provided so as not to inject gas toward the central region (32) of the support surface (31) where the substrate (100) is not supported, but only toward the outer region (33) of the support surface (31) where the substrate (100) is supported.

[0089] To this end, as illustrated in FIG. 6, the first injection hole (412) and the hole (44a) can be provided only in the area facing the outer region (33) of the substrate support (3). That is, when the protruding electrode (43b) is connected to the lower surface of the base electrode (43a), the protruding electrode (43b) can be connected only in the area facing the outer region (33) of the substrate support (3) among the lower surfaces of the base electrode (43a). In addition, since the first injection hole (412) is provided by vertically penetrating the protruding electrode (43b), the first injection hole (412) is formed only in the area facing the outer region of the substrate support (3). In addition, when forming a plurality of holes (44a) in the second electrode (44), they are formed only in the area facing the outer region (33) of the substrate support (3), and are formed at a position into which the protruding electrode (43b) can be inserted. Accordingly, a plurality of holes (44a) are formed only in the outer region (33) of the substrate support member (3). Accordingly, the first gas passing through the first injection hole (412) and the second gas or plasma passing through the hole (44a) can be injected only into the outer region of the substrate support member (3).

[0090] Accordingly, the first type substrate processing device (1) can reduce the flow rate of gas that is wasted because the substrate (100) flows to the central region (32) where it is not supported and thus does not participate in the processing process. Accordingly, the first type substrate processing device (1) can reduce operating costs by reducing the flow rate of wasted gas. In addition, when forming a gallium nitride thin film (200) using the first type substrate processing device (1), the manufacturing cost required to manufacture the gallium nitride thin film (200) can be reduced.

[0091] In addition, the first type of substrate processing device (1) intensively sprays gas toward the outer region (33) where the substrate (100) is supported, so that the flow rate of gas involved in the processing process can be increased by flowing to the outer region (33) where the substrate (100) is supported. Accordingly, the first type of substrate processing device (1) can improve the quality of the substrate (100) on which the processing process is performed.

[0092]

[0093] Hereinafter, with reference to FIGS. 2 to 6, a method for forming a gallium nitride thin film (200) using a first type substrate processing device (1) will be described. At this time, a plurality of substrates (100) are supported on an outer region (33) of a support surface (31) of a substrate support portion (3), and a gas injection portion (4) injects gas only to the outer region (33) of the support surface (31) of the substrate support portion (3).

[0094] First, the temperature inside the chamber (2) is adjusted to 200°C to 500°C using a heater (not shown). Then, after loading a plurality of substrates (100) into the chamber (2), the plurality of substrates (100) are placed on the substrate support member (3). That is, as shown in Fig. 4, the substrates (100) are placed on the outer region (33) of the support surface (31) of the substrate support member (3).

[0095] In the above, it has been described that the substrate (100) is placed on the substrate support (3) after controlling the temperature inside the chamber (2). However, this is not limited to this, and the temperature inside the chamber (2) may be controlled after the substrate (100) is placed on the substrate support (3).

[0096] Next, a gallium-containing source gas is injected toward the substrate support (3) using the gas injection unit (4). To this end, the gallium-containing source gas is supplied to the first connection hole (411) of the gas injection unit (4) using the gas supply unit (40). Accordingly, the gallium-containing source gas supplied to the first connection hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support (3). At this time, the gallium-containing source gas is injected into the outer region (33) of the support surface (31) of the substrate support (3). Accordingly, the gallium-containing source gas is adsorbed or deposited on the substrate (100) mounted on the substrate support (3), thereby forming a gallium-containing thin film (210) as shown in (a) of Fig. 2.

[0097] Afterwards, purge gas is supplied into the chamber (2) to purge the chamber (2) (first purge).

[0098] When the first purge is completed, a nitrogen-containing reactant gas is injected using the gas injection unit (4) to generate hydrogen plasma. To this end, a nitrogen-containing reactant gas and a hydrogen-containing gas are supplied to the second connection hole (421) of the gas injection unit (4) using the gas supply unit (40). At this time, it is more effective to supply a discharge gas, for example, argon gas, together with the second connection hole (421). Accordingly, the nitrogen-containing reactant gas, the hydrogen-containing gas, and the discharge gas supplied to the second connection hole (421) pass through the second injection hole (422) and then flow into the gap between the base electrode (43a) and the second electrode (44). That is, the nitrogen-containing reactant gas, the hydrogen-containing gas, and the discharge gas flow into the gap between the base electrode (43a) and the upper surface of the second electrode (44) and the hole (44a).

[0099] In this way, while the gas passes through the space between the first electrode (43) and the second electrode (44), RF power is applied to the second electrode (44). Accordingly, the gas passing through the space between the first electrode (43) and the second electrode (44) is discharged to form plasma, and the plasma may be hydrogen plasma. When the hydrogen plasma is formed, the nitrogen-containing reactant gas is activated. Then, the activated nitrogen-containing reactant gas is injected toward the substrate (100) disposed below the hole (44a). At this time, the activated nitrogen-containing reactant gas is injected into the outer region (33) of the support surface (31) of the substrate support portion (3). Accordingly, the gallium-containing thin film (210) formed on the substrate (100) and the nitrogen-containing reactant gas react, and a gallium nitride thin film (200) is formed as shown in FIG. 2 (b).

[0100] In forming hydrogen plasma, by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the second electrode (44) for forming the hydrogen plasma, an amorphous gallium nitride thin film or a crystallized gallium nitride thin film (200) can be formed. That is, by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the second electrode (44) to a small degree, an amorphous gallium nitride thin film (200) can be formed. In addition, by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the second electrode (44) to a large degree, a crystalline gallium nitride thin film (200) can be formed.

[0101] Meanwhile, in the past, in order to form a high-density gallium nitride thin film (200), the temperature inside the chamber (2) was heated to a high temperature of 1000°C or higher. However, when the gallium nitride thin film (200) is formed under conditions of a high temperature of 1000°C or higher, the underlying film (110) formed under the gallium nitride thin film (200) may be damaged. That is, the underlying film (110) may be damaged by the temperature of the chamber (2) heated to 1000°C or higher for the formation of the gallium nitride thin film (200), and thus, a problem of defects occurring in the underlying film (110) may occur.

[0102] On the other hand, in the embodiment of the present invention, since hydrogen plasma is formed when injecting a nitrogen-containing reactant gas, there is no need to heat the temperature inside the chamber (2) to a high temperature. That is, even when the temperature inside the chamber (2) is not controlled to a high temperature of 1000°C or higher, but rather controlled to a low temperature of 200°C to 500°C, a high-density or densified gallium nitride thin film (200) can be formed. In other words, since hydrogen plasma is formed when injecting a nitrogen-containing reactant gas to activate the nitrogen-containing reactant gas, a high-density gallium nitride thin film (200) can be formed even at a low temperature (200°C to 500°C). Accordingly, the underlying film (110) formed under the gallium nitride thin film (200) can be suppressed or prevented from being damaged by heat.

[0103] Afterwards, purge gas is supplied into the chamber (2) to purge the chamber (2) (secondary purge).

[0104] A process including a gallium-containing source gas injection step, a first purge step, a nitrogen-containing reactant gas injection step, and a second purge step as described above is referred to as one gallium nitride thin film formation cycle (CY). GaN ) can be used. That is, the gallium nitride thin film formation cycle (CY) GaN) may include 'gallium-containing source gas injection step - first purge step - nitrogen-containing reactant gas injection step - second purge step'. And, gallium nitride thin film formation cycle (CY GaN ) can be performed once or more times consecutively to form a gallium nitride thin film (200) of the target thickness.

[0105]

[0106] FIG. 7 is a schematic bottom view of a gas injection unit according to a modified example in the first type of substrate processing device illustrated in FIG. 3.

[0107] In the above, it has been described that the gas injection unit (4) is provided so as to be able to inject gas only to the outer region of the substrate support unit (3). However, the present invention is not limited thereto, and the gas injection unit (4) may be provided so as to be able to inject gas to both the central region (32) and the outer region (33) of the substrate support unit (3). That is, the gas injection unit (4) may be provided so as to be able to inject gas to the entire support surface (31) of the substrate support unit (3). To this end, as illustrated in FIG. 7, the first injection hole (412) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3), and the hole (44a) may be provided so as to face the central region (32) and the outer region (33) of the substrate support unit (3).

[0108]

[0109] In the above, with reference to FIGS. 1 to 6, a method for forming a gallium nitride (GaN) thin film (200) on a substrate (100) has been described. However, the present invention is not limited thereto, and a gallium arsenide (GaAs) thin film can be formed on a substrate (100) using a method according to an embodiment of the present invention.

[0110] The method for forming a gallium arsenide (GaAs) thin film on a substrate (100) is similar to the method for forming a gallium nitride thin film (200) described above, except that the type of reactant gas is different. Therefore, the method for forming a gallium arsenide (GaAs) thin film on a substrate is briefly described below.

[0111] A method for forming a gallium arsenide (GaAs) thin film may include a step of forming a gallium-containing thin film on a substrate (100) by injecting a gallium-containing source gas containing gallium (Ga) toward a substrate (100), and a step of forming a hydrogen plasma while injecting a reactant gas containing arsenic (As) (hereinafter, arsenic-containing reactant gas) to form a gallium arsenide thin film.

[0112] The method for forming a gallium arsenide thin film is a gallium arsenide thin film formation cycle (CY) GaAs ) may be included. And the gallium arsenide thin film formation cycle (CY GaAs ) may include a 'gallium-containing source gas injection step - arsenic-containing reactant gas injection step'.

[0113] In addition, the gallium arsenide thin film formation cycle (CY GaAs ) may include a purge step. Accordingly, it may be performed in the order of 'gallium-containing source gas injection step - 1st purge step - arsenic-containing reactant gas injection step - 2nd purge step'. At this time, the arsenic-containing gallium thin film formation cycle (CY GaAs ) at least one of the first and second fuzzy steps may be omitted.

[0114] And, hydrogen plasma is formed while spraying arsenic-containing reactant gas. Therefore, even when the temperature inside the chamber where the thin film process is performed is controlled to a low temperature of 200°C to 500°C, rather than a high temperature of 1000°C or higher, a high-density or dense gallium arsenide thin film can be formed. That is, by forming hydrogen plasma when spraying arsenic-containing reactant gas to activate the arsenic-containing reactant gas, a high-density gallium arsenide thin film can be formed even at a low temperature (200°C to 500°C). Therefore, the underlying film formed under the gallium arsenide thin film can be suppressed or prevented from being damaged by heat.

[0115] In addition, the gallium arsenide thin film formation cycle (CY) as described above GaAs ) can be performed n times (n: 1, 2, 3, …). That is, the method for forming a gallium arsenide thin film can be performed by performing one (n=1) or two or more (n ≥ 2) gallium arsenide thin film formation cycles (CY GaAs ) may be included. Here, 2 or more times may mean multiple times.

[0116] A gallium arsenide thin film can be formed using a first type substrate processing device (1) illustrated in FIGS. 3 to 6. At this time, the method for forming a gallium arsenide thin film using the first type substrate processing device (1) illustrated in FIGS. 3 to 6 differs from the method for forming a gallium nitride thin film only in the method and the type of reactant gas. Therefore, a description of the method for forming a gallium arsenide thin film using the first type substrate processing device (1) illustrated in FIGS. 3 to 6 is omitted.

[0117] And, the gallium arsenide thin film can be n-type doped or p-type doped. For example, p-type doping can be performed using boron (B) or n-type doping can be performed using phosphorus (P). Of course, the p-type doping material and n-type doping material are not limited to the examples described above, and various p-type or n-type doping materials can be used. That is, at least one of boron (B), gallium (Ga), and indium (In) can be used as the p-type doping material, and at least one of antimony (Sb) and phosphorus (P) can be used as the n-type doping material. And, for doping, the first type substrate processing device (1) can be equipped with a doping gas supply unit capable of supplying a doping gas.

[0118]

[0119] As another example, an aluminum gallium nitride (AlGaN) thin film can be formed on a substrate (100) using a method according to an embodiment of the present invention.

[0120] The method for forming an aluminum gallium nitride (AlGaN) thin film on a substrate (100) is similar to the method for forming a gallium nitride thin film (200) described above, except that the types of source gas and reactant gas are different. Therefore, the method for forming an aluminum gallium nitride (AlGaN) thin film on a substrate will be briefly described below.

[0121] A method for forming an aluminum gallium nitride (AlGaN) thin film may include a step of forming an aluminum and gallium-containing thin film on a substrate (100) by injecting a source gas containing aluminum (Al) and gallium (Ga) toward a substrate (100), and a step of forming a hydrogen plasma while injecting a nitrogen-containing reactant gas containing nitrogen (N) to form an aluminum gallium nitride (AlGaN) thin film.

[0122] The method for forming an aluminum gallium nitride (AlGaN) thin film is an aluminum gallium nitride thin film formation cycle (CY)AlGaN ) may include. And aluminum gallium nitride thin film formation cycle (CY AlGaN ) may include a 'source gas injection step - nitrogen-containing reactant gas injection step'.

[0123] In addition, aluminum gallium nitride thin film formation cycle (CY AlGaN ) may include a purge step. Accordingly, it may be performed in the order of 'source gas injection step - 1st purge step - nitrogen-containing reactant gas injection step - 2nd purge step'. At this time, the aluminum gallium nitride thin film formation cycle (CY AlGaN ) at least one of the first and second fuzzy steps may be omitted.

[0124] In the step of injecting the source gas, the aluminum-containing source gas and the gallium-containing source gas can be prepared separately and injected separately. For example, the aluminum-containing source gas can be injected first and then the gallium-containing source gas. Of course, conversely, the gallium-containing source gas can be injected first and then the aluminum-containing source gas. Furthermore, the present invention is not limited thereto, and the aluminum-containing source gas and the gallium-containing source gas can be injected together or simultaneously. Furthermore, a source gas containing both aluminum and gallium can be prepared and then injected.

[0125] A hydrogen plasma is formed while injecting a nitrogen-containing reactant gas. Accordingly, a high-density or dense aluminum gallium nitride thin film can be formed even when the temperature inside the chamber where the thin film process is performed is controlled to a low temperature of 200°C to 500°C, rather than a high temperature of 1000°C or higher. That is, by forming a hydrogen plasma when injecting a nitrogen-containing reactant gas to activate the nitrogen-containing reactant gas, a high-density aluminum gallium nitride thin film can be formed even at a low temperature (200°C to 500°C). Accordingly, the underlying film formed under the aluminum gallium nitride thin film can be suppressed or prevented from being damaged by heat.

[0126] In addition, the aluminum gallium nitride thin film formation cycle (CY) as described above AlGaN ) can be performed n times (n: 1, 2, 3, …). That is, the method for forming an aluminum gallium nitride thin film can be performed by performing one (n=1) or two or more (n ≥ 2) gallium nitride thin film formation cycles (CY AlGaN ) may be included. Here, 2 or more times may mean multiple times.

[0127] An aluminum gallium nitride thin film can be formed using a first type substrate processing device (1) illustrated in FIGS. 3 to 6. At this time, the method for forming an aluminum gallium nitride thin film using the first type substrate processing device (1) illustrated in FIGS. 3 to 6 differs only in the method for forming the gallium nitride thin film and the type of source gas. Therefore, a description of the method for forming an aluminum gallium nitride thin film using the first type substrate processing device (1) illustrated in FIGS. 3 to 6 is omitted.

[0128]

[0129] And, the aluminum gallium nitride (AlGaN) thin film can be n-type doped or p-type doped. For example, p-type doping can be performed using boron (B) or n-type doping can be performed using phosphorus (P). Of course, the p-type doping material and n-type doping material are not limited to the examples described above, and various p-type or n-type doping materials can be used. That is, at least one of boron (B), gallium (Ga), and indium (In) can be used as the p-type doping material, and at least one of antimony (Sb) and phosphorus (P) can be used as the n-type doping material. And, for doping, the first type substrate processing device (1) can be equipped with a doping gas supply unit capable of supplying a doping gas.

[0130]

[0131] FIG. 8 is a schematic drawing of a second type of substrate processing device capable of forming a thin film using a method according to an embodiment of the present invention.

[0132] The substrate processing apparatus for forming a gallium nitride (GaN) thin film, a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film is not limited to the first type of substrate processing apparatus illustrated in FIGS. 3 to 7. The second type of substrate processing apparatus illustrated in FIG. 8 may be used to form a gallium nitride (GaN) thin film, a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film.

[0133] Below, the second substrate processing device illustrated in Fig. 8 will be described.

[0134] Referring to FIG. 8, the substrate processing device may include a chamber (1000), a substrate support unit (2000) installed within the chamber (1000) to support a substrate (100), first and second gas injection units (3000a, 3000b) installed within the chamber (1000) so as to face the substrate support unit (2000), a gas supply unit (4000) for providing a process gas to the first and second gas injection units (3000a, 3000b), an antenna (6100) having a coil for inducing an electric field within the chamber (1000) for plasma generation, and a power supply unit (6200) connected to the antenna (6100).

[0135] In addition, the substrate processing device may include a heating unit (5000) installed to face the substrate support unit (2000), a driving unit (7000) that raises and lowers or rotates the substrate support unit (2000), and an exhaust unit (8000) that exhausts gas and impurities inside the chamber (1000).

[0136] In addition, the substrate processing device may include a pump connecting the exhaust section (8000) and the chamber (1000), and the pump may be, for example, a turbomolecular pump (TMP). The turbomolecular pump can maintain a base vacuum inside the chamber (1000), and can form and process a stable plasma at an ultra-low vacuum pressure of several Torr or less even during the process.

[0137] The chamber (1000) may be a cylinder shape having an internal space, and may be, for example, a dome shape as illustrated in FIG. 8. More specifically, the chamber (1000) may include a chamber body (1100), an upper body (1200) installed on the upper side of the chamber body (1100), and a lower body (1300) installed on the lower side of the chamber body (1100). The chamber body (1100) may be a cylinder shape with an upper and a lower side open, and the upper body (1200) may be installed to cover the upper opening of the chamber body (1100), and the lower body (1300) may be installed to cover the lower opening of the chamber body (1100). In addition, the upper body (1200) may be a dome shape having a sloped surface whose height increases toward the center in the width direction thereof. In addition, the lower body (1300) may have a dome shape with a slope whose height decreases toward the center in the width direction. Each of the chamber (1000), i.e., the chamber body (1100), the upper body (1200), and the lower body (1300) may be made of a transparent material that allows light to pass through, for example, quartz.

[0138] The gas supply unit (4000) may include a source gas supply unit (4100) for supplying a source gas, a reactant gas supply unit (4200) for supplying a reactant gas, a hydrogen-containing gas supply unit (4300) for supplying a hydrogen-containing gas, and a discharge gas supply unit (4400) for supplying a discharge gas. In addition, the gas supply unit (4000) may further include a purge gas supply unit (not shown) for supplying a purge gas.

[0139] In addition, the gas supply unit (4000) may include a first transport pipe (4500a) connecting a source gas supply unit (4100), a reactant gas supply unit (4200) and a first gas injection unit (3000a), a hydrogen-containing gas supply unit (4300), and a second transport pipe (4500b) connecting a discharge gas supply unit (4400) and a second gas injection unit (3000b).

[0140] In addition, the gas supply unit (4000) may include a plurality of first connection pipes (4600a) connecting the source gas supply unit (4100), the reactant gas supply unit (4200) and the first transport pipe (4500a), a valve installed in each of the plurality of first connection pipes (4600a), a plurality of second connection pipes (4600b) connecting the hydrogen-containing gas supply unit (4300) and the discharge gas supply unit (4400) and the second transport pipe (4500b), and a valve installed in each of the plurality of second connection pipes (4600b).

[0141] And, using the substrate processing device described above, a gallium nitride (GaN) thin film, a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film can be formed on a substrate.

[0142]

[0143] Hereinafter, with reference to (a) and (b) of FIG. 2 and FIG. 8, a method for forming a gallium nitride thin film on a substrate using a second type of substrate processing device will be described.

[0144] First, the temperature inside the chamber (1000) is adjusted to 200°C to 5000°C using a heating unit (5000). Then, after loading a plurality of substrates (100) into the chamber (1000), the plurality of substrates (100) are placed on a substrate support unit (2000).

[0145] In the above, it has been described that the substrate (100) is placed on the substrate support (2000) after controlling the temperature inside the chamber (1000). However, this is not limited to this, and the temperature inside the chamber (1000) may be controlled after the substrate (100) is placed on the substrate support (2000).

[0146] Next, a gallium-containing source gas is injected toward the substrate support (2000) using the first gas injection unit (3000a). That is, when the gallium-containing source gas of the source gas supply unit (4100) is supplied to the first gas injection unit (3000a) using the first conveying pipe (4500a), the first gas injection unit (3000a) injects the gallium-containing source gas toward the substrate (100). Accordingly, the gallium-containing source gas is adsorbed or deposited on the substrate (100) mounted on the substrate support unit (2000), thereby forming a gallium-containing thin film (210) as shown in (a) of FIG. 2.

[0147] Thereafter, the chamber (1000) is purged by supplying purge gas into the interior of the chamber (1000) (first purge). At this time, the purge can be performed by injecting the purge gas into the interior of the chamber (1000) using at least one of the first gas injection unit (3000a) or the second gas injection unit (3000b).

[0148] When the first purge is completed, a nitrogen-containing reactant gas is injected using the first gas injection unit (3000a) to generate hydrogen plasma. To this end, the nitrogen-containing reactant gas is supplied to the first gas injection unit (3000a) using the reactant gas supply unit (4200) and the first transport pipe (4500a), and the hydrogen-containing gas is supplied to the second gas injection unit (3000b) using the hydrogen-containing gas supply unit (4300) and the second transport pipe (4500b). In addition, at this time, the discharge gas can be supplied to the second gas injection unit (3000b) together using the discharge gas supply unit (4400) and the second transport pipe (4500b). Accordingly, a nitrogen-containing reactant gas is injected into the chamber (1000) through the first gas injection unit (3000a), and a hydrogen-containing gas and a discharge gas are injected into the chamber (1000) through the second gas injection unit (3000b).

[0149] In addition, power is supplied to the antenna (6100) using the power supply (6200). As a result, gas is discharged inside the chamber to form hydrogen plasma. When the hydrogen plasma is formed, the nitrogen-containing reactant gas is activated. Then, the activated nitrogen-containing reactant gas is sprayed toward the substrate (100). As a result, the gallium-containing thin film (210) formed on the substrate (100) and the nitrogen-containing reactant gas react, and a gallium nitride thin film (200) is formed as shown in (b) of FIG. 2.

[0150] In forming hydrogen plasma, an amorphous gallium nitride thin film or a crystallized gallium nitride thin film (200) can be formed by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the antenna (6100) for forming the hydrogen plasma. That is, an amorphous gallium nitride thin film (200) can be formed by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the antenna to a small extent. In addition, a crystalline gallium nitride thin film (200) can be formed by controlling at least one of the time for forming the hydrogen plasma and the RF power applied to the antenna to a large extent.

[0151] In this way, since hydrogen plasma is formed when injecting a nitrogen-containing reactant gas, there is no need to heat the temperature inside the chamber (1000) to a high temperature. That is, since hydrogen plasma is formed when injecting a nitrogen-containing reactant gas to activate the nitrogen-containing reactant gas, a high-density gallium nitride thin film (200) can be formed even at a low temperature (200°C to 5000°C). Accordingly, the underlying film (1100) formed under the gallium nitride thin film (200) can be suppressed or prevented from being damaged by heat.

[0152] Afterwards, purge gas is supplied into the interior of the chamber (1000) to purge the chamber (1000) (secondary purge).

[0153] A process including a gallium-containing source gas injection step, a first purge step, a nitrogen-containing reactant gas injection step, and a second purge step as described above is referred to as one gallium nitride thin film formation cycle (CY). GaN ) can be used. That is, the gallium nitride thin film formation cycle (CY) GaN ) may include 'gallium-containing source gas injection step - first purge step - nitrogen-containing reactant gas injection step - second purge step'. And, gallium nitride thin film formation cycle (CY GaN ) can be performed once or more times consecutively to form a gallium nitride thin film (200) of the target thickness.

[0154]

[0155] In the above, a method for forming a gallium nitride thin film on a substrate using the second substrate processing device illustrated in Fig. 8 has been described. However, the present invention is not limited thereto.

[0156] A gallium arsenide (GaAs) thin film and an aluminum gallium nitride (AlGaN) thin film can be formed using the second substrate processing device illustrated in Fig. 8. At this time, the method for forming the gallium arsenide (GaAs) thin film and the aluminum gallium nitride (AlGaN) thin film differs from the method for forming the gallium nitride thin film only in the type of at least one of the source gas and the reactant gas, and therefore a detailed description thereof is omitted.

[0157]

[0158] FIG. 9 is a drawing showing a state in which a silicon carbide thin film is formed on a substrate using a method according to an embodiment of the present invention.

[0159] Referring to FIG. 9, a silicon carbide thin film (300) can be formed on a substrate (100). The substrate (100) can be any one of a wafer, glass, and metal. When the substrate (100) is a wafer, the wafer can be any one of a silicon wafer, a silicon carbide wafer, and a gallium arsenide wafer, for example.

[0160] Referring to FIG. 9, the substrate (100) may have a predetermined film (hereinafter, the underlayer (110)) formed on at least one surface, and a silicon carbide thin film (300) may be formed on the underlayer (110). That is, in a state where the underlayer (110) is formed on the substrate (100), the silicon carbide thin film (300) may be formed on the underlayer (110). Here, the underlayer (110) is not particularly limited, but may be, for example, at least one of a metal film, an oxide film, a nitride film, and a carbide film.

[0161] The silicon carbide thin film (300) may be formed to cover the entire upper surface of the underlying film (110), as illustrated in FIG. 9. Of course, the present invention is not limited thereto, and the silicon carbide thin film (300) may be formed to expose a portion of the upper surface of the underlying film (110). That is, the silicon carbide thin film (300) may be formed in some areas of the upper surface of the underlying film (110), and the silicon carbide thin film (300) may not be formed in the remaining areas.

[0162] In the above, a case in which a silicon carbide thin film (300) is formed on a base film (110) formed on a substrate (100) has been described. However, the present invention is not limited thereto, and the silicon carbide thin film (300) may be formed directly on the substrate (100). That is, the silicon carbide thin film (300) may be formed on the substrate (100) without a separate base film (110) being formed.

[0163] The silicon carbide thin film (300) formed by the method according to the embodiment may be a component of a power semiconductor device or a field effect transistor. To explain with a more specific example, the silicon carbide thin film (300) according to the embodiment may be an active layer that is a component of a power semiconductor device.

[0164]

[0165] Figures 10 (a) to (c) are process diagrams conceptually illustrating a method for forming a silicon carbide thin film on a substrate using a method according to an embodiment of the present invention.

[0166] Hereinafter, a method for forming a silicon carbide thin film (300) on a substrate (100) will be described with reference to (a) to (c) of FIG. 10. At this time, forming a silicon carbide thin film (300) on a base film (110) formed on the substrate (100) will be described as an example.

[0167] A method for forming a silicon carbide thin film (300) may include a step of forming a silicon-containing thin film (310) on a substrate (100) by injecting a source gas containing silicon (Si) (hereinafter, silicon-containing source gas) toward a substrate (100), a step of forming a first hydrogen plasma while injecting a reactant gas containing carbon (C) (hereinafter, carbon-containing reactant gas) to form an amorphous silicon carbide thin film (320), and a step of forming a second hydrogen plasma to crystallize the amorphous silicon carbide thin film (320).

[0168] For convenience of explanation, the step of forming a first hydrogen plasma by injecting a carbon-containing reactant gas is described below as a ‘carbon-containing reactant gas injection step.’

[0169] The method for forming a silicon carbide thin film (300) is a silicon carbide thin film forming cycle (CY) SiC ) may include the silicon carbide thin film formation cycle (CY) SiC) may include 'silicon-containing source gas injection step - carbon-containing reactant gas injection step - hydrogen plasma formation step (second hydrogen plasma formation step)'.

[0170] In addition, the silicon carbide thin film formation cycle (CY SiC ) may include a purge step, i.e., a silicon carbide film formation cycle (CY SiC ) may further include at least one of a purge step (first purge step) performed between the silicon-containing source gas injection step and the carbon-containing reactant gas injection step and a purge step (second purge step) performed after the carbon-containing reactant gas injection step is completed. Here, the purge step may mean supplying purge gas into the interior of the chamber in which the substrate (100) is loaded and exhausting the gas through the exhaust port.

[0171] Silicon carbide thin film formation cycle (CY) SiC ) includes a purge step, it can be performed in the order of 'silicon-containing source gas injection step - first purge step - carbon-containing reactant gas injection step - hydrogen plasma formation step - second purge step'. At this time, the silicon carbide thin film formation cycle (CY SiC ) at least one of the first and second fuzzy steps may be omitted.

[0172] And, the silicon carbide thin film formation cycle (CY) as described above SiC ) can be performed n times (n: 1, 2, 3, …). That is, the method for forming a silicon carbide thin film can be performed by performing one (n=1) or two or more (n ≥ 2) silicon carbide thin film formation cycles (CY SiC ) may be included. Here, 2 or more times may mean multiple times.

[0173]

[0174] Silicon carbide thin film formation cycle (CY) SiC) may further include a hydrogen plasma formation step (hereinafter, the third plasma formation step) between the silicon-containing source gas injection step and the carbon-containing reactant gas injection step. More specifically, the silicon carbide thin film formation cycle (CY SiC ) may further include a step of forming a third hydrogen plasma between the silicon-containing source gas injection step and the first purge step. That is, the silicon carbide thin film formation cycle (CY SiC ) may include 'silicon-containing source gas injection step - third hydrogen plasma formation step - first purge step - carbon-containing reactant gas injection step - second hydrogen plasma formation step - second purge step'.

[0175]

[0176] A silicon carbide thin film (300) can be formed using a first type substrate processing device (1) illustrated in FIGS. 3 to 6. At this time, the gas supply unit (40) of the first type substrate processing device (1) may include a plurality of gas supply units that supply different types of gases to the gas injection unit (4). That is, the gas supply unit (40) may include a source gas supply unit that supplies a source gas to the gas injection unit (4), a reactant gas supply unit that supplies a reactant gas to the gas injection unit (4), and a hydrogen-containing gas supply unit that supplies a hydrogen-containing gas. In addition, the gas supply unit (40) may further include a discharge gas supply unit that supplies a discharge gas and a purge gas supply unit that supplies a purge gas.

[0177] The gas supplied from the source gas supply unit may be a silicon (Si)-containing source gas. More specifically, the silicon-containing source gas may be, for example, a gas containing SiH2Cl2 (Dichlorosilane; DCS). The silicon-containing source gas is not limited to the materials described above, and various gases containing silicon (Si) may be used.

[0178] The gas supplied from the reactant gas supply unit is a carbon-containing reactant gas. The carbon-containing reactant gas may be, for example, a gas containing CH4. Of course, the carbon-containing reactant gas is not limited to the examples described above, and various gases containing carbon (C) may be used.

[0179] The gas supplied from the hydrogen-containing gas supply unit may be hydrogen (H)-containing gas. More specifically, the hydrogen-containing gas may be hydrogen (H) gas. In addition, the discharge gas and purge gas supplied from the discharge gas supply unit and the purge gas supply unit may be argon (Ar) gas.

[0180] In the above, it has been described that the gas supply unit (40) is provided with a carbon-containing reactant gas supply unit and a hydrogen-containing gas supply unit separately. However, the present invention is not limited thereto, and the gas supply unit may include a mixed gas supply unit that supplies a mixed gas containing carbon and hydrogen. In this case, the mixed gas may be a gas containing CH4, for example. Of course, the present invention is not limited thereto, and the mixed gas may be a gas in which a carbon-containing gas and a hydrogen-containing gas are mixed, and the mixed gas supply unit may supply this mixed gas to the gas injection unit (4).

[0181] The first gas path (41) of the gas injection unit (4) injects a first gas into the processing space, and the second gas path (42) injects a second gas into the processing space (SP). At this time, the first gas and the second gas may be different gases. For example, when the first gas is a silicon-containing source gas, the second gas may be a carbon-containing reactant gas and a hydrogen-containing gas. That is, the silicon-containing source gas may pass through the first gas path (41), and the carbon-containing reactant gas and the hydrogen-containing gas may pass through the second gas path (42). As another example, when the first gas is a silicon-containing source gas, the second gas may be a mixed gas containing carbon and hydrogen. In this case, the silicon-containing source gas may pass through the first gas path (41), and the mixed gas may pass through the second gas path (42). Of course, conversely, the second gas may be a silicon-containing source gas. In this case, the first gas may be a carbon-containing reactant gas and a hydrogen-containing gas, or a mixed gas containing carbon and hydrogen.

[0182]

[0183] Hereinafter, with reference to FIGS. 3 to 6 and FIG. 10, a method for forming a silicon carbide thin film (300) using a first type of substrate processing device (1) will be described. At this time, a plurality of substrates (100) are supported on an outer region (33) of a support surface (31) of a substrate support portion (3), and a gas injection portion (4) injects gas only to the outer region (33) of the support surface (31) of the substrate support portion (3).

[0184] First, the temperature inside the chamber (2) is adjusted to 200°C to 500°C using a heater (not shown). Then, after loading a plurality of substrates (100) into the chamber (2), the plurality of substrates (100) are placed on the substrate support member (3). That is, as shown in Fig. 4, the substrates (100) are placed on the outer region (33) of the support surface (31) of the substrate support member (3).

[0185] Next, a silicon-containing source gas is injected into the interior of the chamber (2) using the gas injection unit (4). To this end, the silicon-containing source gas is supplied to the first connection hole (411) of the gas injection unit (4) using the gas supply unit (40). Accordingly, the silicon-containing source gas supplied to the first connection hole (411) passes through the first injection hole (412) formed in the protruding electrode (43b) and is injected toward the substrate support unit (3). At this time, the silicon-containing source gas is injected into the outer region (33) of the support surface (31) of the substrate support unit (3). Accordingly, the silicon-containing source gas is adsorbed or deposited on the substrate (100) mounted on the substrate support unit (3), thereby forming a silicon-containing thin film (310) as shown in Fig. 10 (a).

[0186] Afterwards, purge gas is supplied into the chamber (2) to purge the chamber (2) (first purge).

[0187] Next, a first hydrogen plasma is formed by injecting a carbon-containing reactant gas using the gas injection unit (4). To this end, the carbon-containing reactant gas and the hydrogen-containing gas are supplied to the second connection hole (421) of the gas injection unit (4) using the gas supply unit (40). At this time, it is more preferable to supply a discharge gas, for example, argon gas, together with the second connection hole (421). Accordingly, the carbon-containing reactant gas, the hydrogen-containing gas, and the discharge gas supplied to the second connection hole (421) pass through the second injection hole (422) and then flow into the empty space between the base electrode (43a) and the second electrode (44). That is, the carbon-containing reactant gas, the hydrogen-containing gas, and the discharge gas flow into the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and the hole (44a).

[0188] In this way, while the gas passes through the empty space between the first electrode (43) and the second electrode (44), RF power is applied to the second electrode (44). Accordingly, the gas passing through the empty space between the first electrode (43) and the second electrode (44) is discharged to form a first hydrogen plasma. That is, the first hydrogen plasma is formed in the empty space between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and in the outer space of the protruding electrode (43b) in the hole (44a). Accordingly, the carbon-containing reactant gas is activated, and the activated carbon-containing reactant gas is injected toward the substrate (100) disposed below the hole (44a). At this time, the activated carbon-containing reactant gas is injected into the outer region (33) of the support surface (31) of the substrate support portion (3). Accordingly, the silicon-containing thin film (310) formed on the substrate (100) and the carbon-containing reactant gas react to form a silicon carbide thin film (320) as shown in (b) of Fig. 10. The silicon carbide thin film (320) formed at this time may be amorphous.

[0189] In this way, in the embodiment, a first hydrogen plasma is formed while injecting a carbon-containing reactant gas. The first hydrogen plasma serves to prevent silicon (Si) from being separated from the silicon-containing thin film (310). In other words, by forming the first hydrogen plasma, separation of silicon (Si) from the silicon-containing thin film (310) can be suppressed or prevented.

[0190] Meanwhile, in the past, the interior of the chamber (2) was heated to a high temperature of 1000°C or higher in order to prevent silicon from being separated from the silicon-containing thin film (310). However, when a silicon carbide thin film is formed under conditions of a high temperature of 1000°C or higher, a large number of defects may occur in the silicon carbide thin film. Accordingly, there is a problem that leakage current occurs due to the silicon carbide thin film in a device including a crystallized silicon carbide thin film (300). In addition, when forming a silicon carbide thin film on the underlying film (110), if the temperature inside the chamber (2) is controlled to a high temperature of 1000°C or higher, the underlying film (110) may be damaged by the high temperature heat. That is, the underlying film (110) may be damaged by the temperature of the chamber (2) heated to 1000°C or higher for the formation of the silicon carbide thin film, and thus a problem of defects occurring in the underlying film (110) may occur.

[0191] On the other hand, in the embodiment of the present invention, when injecting a carbon-containing reactant gas, the separation of silicon (Si) from the silicon-containing thin film (310) can be suppressed or prevented by forming the first hydrogen plasma. That is, even when the temperature inside the chamber (2) is not controlled to a high temperature of 1000°C or higher, but rather controlled to a low temperature of 200°C to 500°C, the separation of silicon (Si) from the silicon-containing thin film (310) can be suppressed or prevented. In other words, by forming the first hydrogen plasma when injecting a carbon-containing reactant gas, an amorphous silicon carbide thin film (300) can be formed even at a low temperature (200°C to 500°C). Accordingly, an amorphous silicon carbide thin film (320) with few or no defects can be formed.

[0192] In addition, the silicon-containing reactant gas may contain chlorine (Cl) in addition to silicon, and chlorine (Cl) may deteriorate the properties of the silicon carbide thin film. For example, the electrical resistivity of the silicon carbide thin film may increase due to chlorine (Cl). However, in the embodiment, by forming a first hydrogen plasma while injecting a carbon-containing reactant gas, a silicon carbide thin film (320) with a reduced chlorine (Cl) content may be formed. That is, when the first hydrogen plasma is formed, hydrogen (H) ions and chlorine (Cl) contained in the silicon-containing thin film (310) react to generate hydrochloric acid (HCl) gas. This hydrochloric acid (HCl) gas is then exhausted to the outside through an exhaust port. As a result, a silicon carbide thin film that does not contain chlorine (Cl) or has a low chlorine (Cl) content can be formed, and thus the electrical resistivity of the silicon carbide thin film can be reduced.

[0193] Next, a second hydrogen plasma is formed. To this end, a hydrogen-containing gas and a discharge gas are supplied to the second connection hole (421) of the gas injection unit (4) using the gas supply unit (40). Accordingly, the hydrogen-containing gas and the discharge gas supplied to the second connection hole (421) pass through the space between the first electrode (43) and the second electrode (44). That is, the hydrogen-containing gas and the discharge gas flow into the gap between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and into the hole (44a).

[0194] In this way, while the gas passes through the empty space between the first electrode (43) and the second electrode (44), RF power is applied to the second electrode (44). Accordingly, second hydrogen plasma is formed in the empty space between the lower surface of the base electrode (43a) and the upper surface of the second electrode (44) and the outer space of the protruding electrode (43b) in the hole (44a). Then, the formed second hydrogen plasma is injected toward the substrate support (3) arranged below the hole (44a). At this time, the second hydrogen plasma can be injected into the outer region (33) of the support surface (31) of the substrate support (3). Accordingly, the substrate (100) supported by the outer region (33) of the support surface (31) of the substrate support (3) is exposed to the hydrogen plasma. That is, the amorphous silicon carbide thin film (320) formed on the substrate (100) is exposed to the second hydrogen plasma. The second hydrogen plasma crystallizes the amorphous silicon carbide thin film (320). That is, the amorphous silicon carbide thin film (320) reacts with the second hydrogen plasma and crystallizes, thereby forming a crystallized silicon carbide thin film (300).

[0195] Meanwhile, in the past, in order to crystallize an amorphous silicon carbide thin film (300), the temperature inside the chamber (2) was heated to a high temperature of 1000°C or higher. However, when the amorphous silicon carbide thin film (320) is crystallized under conditions of high temperature of 1000°C or higher, a large number of defects are generated in the silicon carbide thin film (300). That is, the crystalline silicon carbide thin film (300) contains a large number of defects. Accordingly, in a device including the crystallized silicon carbide thin film (300), there is a problem in that leakage current occurs due to the silicon carbide thin film (300). In addition, when forming the silicon carbide thin film (300) on the underlying film (110), if the temperature inside the chamber (2) is controlled to a high temperature of 1000°C or higher, the underlying film (110) may be damaged by the high temperature heat. That is, when the temperature inside the chamber (2) is heated to 1000°C or higher to crystallize the amorphous silicon carbide thin film (320), the underlying film (110) may be damaged by the heat, and thus a problem may arise in which a defect occurs in the underlying film (110).

[0196] On the other hand, in the embodiment of the present invention, after forming an amorphous silicon carbide thin film (320), the amorphous silicon carbide thin film (320) is crystallized by forming a second hydrogen plasma. That is, the amorphous silicon carbide thin film (320) can be crystallized using the second hydrogen plasma without heating the temperature inside the chamber (2) to a high temperature of 1000°C or higher. In other words, by forming the second hydrogen plasma, the amorphous silicon carbide thin film (320) can be crystallized even when the chamber (2) is controlled to a low temperature of 200°C to 500°C. Accordingly, a crystalline silicon carbide thin film (300) with few or no defects can be formed.

[0197] Afterwards, purge gas is supplied into the chamber (2) to purge the chamber (2) (secondary purge).

[0198] A process including a silicon-containing source gas injection step, a first purge step, a carbon-containing reactant gas injection step, a hydrogen plasma formation step, and a second purge step as described above is one silicon carbide thin film formation cycle (CY). SiC ) can be used. That is, the silicon carbide thin film formation cycle (CY) SiC ) may include 'silicon-containing source gas injection step - first purge step - carbon-containing reactant gas injection step - hydrogen plasma formation step - second purge step'. And, silicon carbide thin film formation cycle (CY SiC ) can be performed once or more times consecutively to form a silicon carbide thin film (300) of a target thickness.

[0199]

[0200] In the above, it has been described that the first purge is performed after the silicon-containing source gas injection step is completed. However, this is not limited to this, and a step of forming hydrogen plasma (third hydrogen plasma) may be further performed between the silicon-containing source gas injection step and the first purge step.

[0201] Meanwhile, the silicon-containing source gas may contain impurities other than silicon (Si), and thus the silicon-containing thin film (310) may contain impurities. In addition, the quality of the silicon carbide thin film (300) may be deteriorated by the impurities contained in the silicon-containing thin film (310).

[0202] Therefore, in the embodiment, after forming a silicon-containing thin film (310) on a substrate (100) by injecting a silicon-containing source gas, a third hydrogen plasma is formed to remove impurities from the silicon-containing thin film (310). The method for forming the third hydrogen plasma is the same as the first and second hydrogen plasma forming methods described above, and therefore, a description thereof is omitted. When hydrogen plasma (third hydrogen plasma) is formed after forming the silicon-containing thin film (310), the silicon-containing thin film (310) is exposed to the hydrogen plasma, and at this time, the silicon-containing thin film (310) and the hydrogen plasma react, so that impurities can be separated or removed from the silicon-containing thin film (310). Therefore, the quality of the silicon carbide thin film (300) can be improved.

[0203]

[0204] In the above, a method for forming a silicon carbide thin film (300) using the first type of substrate processing device illustrated in FIGS. 3 to 6 has been described. However, in forming a silicon carbide thin film (300) using a method according to an embodiment of the present invention, the silicon carbide thin film (300) may be formed using the second type of substrate processing device illustrated in FIG. 8.

[0205] Briefly, a silicon-containing source gas is injected into the interior of the chamber (1000) using a source gas supply unit (4100) and a first gas injection unit (3000a). Then, a reactant gas is injected into the interior of the chamber (1000) using a reactant gas supply unit (4200) and a first gas injection unit (3000a). In addition, a hydrogen-containing gas and a discharge gas are injected into the interior of the chamber (1000) using a hydrogen-containing gas supply unit (4300), a discharge gas supply unit (4400), and a second gas injection unit (3000b). Then, in the step of injecting a carbon-containing reactant gas, power is applied to an antenna (6100) using a power supply unit (6200) to form a first hydrogen plasma inside the chamber (1000). Thereafter, by injecting hydrogen-containing gas and discharge gas into the interior of the chamber (1000) using the hydrogen-containing gas supply unit (4300), the discharge gas supply unit (4400), and the second gas injection unit (3000b), power is applied to the antenna (6200) to form a second hydrogen plasma inside the chamber (1000). Thus, a silicon carbide thin film (300) can be formed on the substrate (100).

[0206]

[0207] According to embodiments of the present invention, a high-density gallium nitride thin film (200), a silicon carbide thin film (300), a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film can be formed at a low temperature. In addition, that is, by generating hydrogen plasma during thin film formation, a high-density gallium nitride thin film (200), a silicon carbide thin film (300), a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film can be formed at a low temperature. Accordingly, it is possible to suppress or prevent defects from occurring in the gallium nitride thin film (200), the silicon carbide thin film (300), the gallium arsenide (GaAs) thin film, and the aluminum gallium nitride (AlGaN) thin film due to high temperature heat. In addition, when forming a gallium nitride thin film (200), a silicon carbide thin film (300), a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film, it is possible to suppress or prevent the formation of defects due to damage to the underlying film (110) caused by heat.

[0208] Therefore, in a semiconductor device, such as a power semiconductor device or a field effect transistor, including at least one of a gallium nitride thin film (200), a silicon carbide thin film (300), a gallium arsenide (GaAs) thin film, and an aluminum gallium nitride (AlGaN) thin film, it is possible to suppress or prevent deterioration of electrical characteristics due to the gallium nitride thin film (200), the silicon carbide thin film (300), the gallium arsenide (GaAs) thin film, and the aluminum gallium nitride (AlGaN) thin film.

[0209] According to embodiments of the present invention, high-density gallium nitride thin films, silicon carbide thin films, gallium arsenide thin films, and aluminum gallium nitride thin films can be formed at low temperatures. Accordingly, it is possible to suppress or prevent the gallium nitride thin films, silicon carbide thin films, gallium arsenide thin films, and aluminum gallium nitride thin films, and underlying films formed thereunder, from being damaged by high heat and causing defects.

Claims

1. A method for forming a gallium nitride thin film on one or more substrates disposed in the interior space of a chamber in which the gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending so as to protrude below the base electrode; a second electrode separately disposed below the protruding electrode; the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to be able to inject gas above the second electrode; A step of injecting a gallium-containing source gas toward one or more substrates using the first gas path; and A method for forming a thin film, comprising: a step of forming a gallium nitride thin film by injecting a nitrogen-containing reactant gas toward a substrate using the second gas path and forming hydrogen plasma using the potential difference between the first electrode and the second electrode.

2. In claim 1, The step of forming the hydrogen plasma includes the step of supplying a hydrogen-containing gas to the second gas path, A method for forming a thin film in which the nitrogen-containing reactant gas and the hydrogen-containing gas pass through the second gas path and then through the space between the first electrode and the second electrode.

3. In claim 1, A method for forming a thin film, wherein the temperature inside the chamber is controlled to 200°C to 500°C in the step of injecting the gallium-containing source gas and the step of forming a gallium nitride thin film.

4. In claim 1, A method for forming a thin film, comprising: forming a hydrogen plasma inside the chamber between the step of injecting a gallium-containing source gas toward the at least one substrate using the first gas path and the step of forming a gallium nitride thin film.

5. In claim 1, In the step of injecting a gallium-containing source gas toward one or more substrates using the first gas path, A method for forming a thin film, comprising the step of additionally spraying a doping material containing at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

6. A method for forming a silicon carbide thin film on one or more substrates disposed in the interior space of a chamber in which the gas injection unit is installed, using a gas injection unit including a first electrode having a base electrode and a protruding electrode extending so as to protrude downward from the base electrode, a second electrode separately disposed downward from the protruding electrode, wherein the protruding electrode penetrates a hole formed in the second electrode, a first gas path is formed inside the protruding electrode, and a second gas path is formed inside the first electrode so as to be able to inject gas upward from the second electrode, A step of injecting a silicon-containing source gas toward one or more substrates using the first gas path; A step of forming an amorphous silicon carbide thin film by injecting a carbon-containing reactant gas toward a substrate using the second gas path and forming a first hydrogen plasma using the potential difference between the first electrode and the second electrode; A method for forming a thin film, comprising: a step of forming a second hydrogen plasma using a potential difference between the first electrode and the second electrode to crystallize the amorphous silicon carbide thin film.

7. In claim 6, The step of forming the first and second hydrogen plasmas includes the step of supplying a hydrogen-containing gas to the second gas path, A method for forming a thin film, wherein the carbon-containing reactant gas and the hydrogen-containing gas pass through the second gas path and then through the space between the first electrode and the second electrode.

8. In claim 6, A method for forming a thin film, wherein the temperature inside the chamber is controlled to 200°C to 500°C in the step of injecting the silicon-containing source gas, the step of forming the amorphous silicon carbide thin film, and the step of crystallizing the amorphous silicon carbide thin film.

9. In claim 6, A method for forming a thin film, comprising: forming a hydrogen plasma inside the chamber between the step of injecting a silicon-containing source gas toward the at least one substrate using the first gas path and the step of forming the amorphous silicon carbide thin film.

10. In claim 6, In the step of injecting a silicon-containing source gas toward one or more substrates using the first gas path, A method for forming a thin film, comprising the step of additionally spraying a doping material containing at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

11. A method for forming a gallium arsenide thin film on one or more substrates disposed in the internal space of a chamber in which the gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending so as to protrude below the base electrode; a second electrode separately disposed below the protruding electrode; the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to be able to inject gas above the second electrode; A step of injecting a gallium-containing source gas toward one or more substrates using the first gas path; and A method for forming a thin film, comprising: a step of forming a gallium arsenide thin film by injecting an arsenic-containing reactant gas toward a substrate using the second gas path and forming hydrogen plasma using the potential difference between the first electrode and the second electrode.

12. In claim 11, The step of forming the hydrogen plasma includes the step of supplying a hydrogen-containing gas to the second gas path, A method for forming a thin film, wherein the arsenic-containing reactant gas and the hydrogen-containing gas pass through the second gas path and then through the space between the first electrode and the second electrode.

13. In claim 11, A method for forming a thin film, wherein the temperature inside the chamber is controlled to 200°C to 500°C in the step of injecting the gallium-containing source gas and the step of forming a gallium arsenide thin film.

14. In claim 11, A method for forming a thin film, comprising: forming a hydrogen plasma inside the chamber between the step of injecting a gallium-containing source gas toward the at least one substrate using the first gas path and the step of forming the gallium arsenide thin film.

15. In claim 11, In the step of injecting a gallium-containing source gas toward one or more substrates using the first gas path, A method for forming a thin film, comprising the step of additionally spraying a doping material containing at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

16. A method for forming an aluminum gallium nitride thin film on one or more substrates disposed in an internal space of a chamber in which the gas injection unit is installed, the method comprising: a first electrode having a base electrode and a protruding electrode extending so as to protrude below the base electrode; a second electrode separately disposed below the protruding electrode; the protruding electrode penetrating a hole formed in the second electrode, a first gas path formed inside the protruding electrode, and a second gas path formed inside the first electrode so as to be able to inject gas above the second electrode; A step of injecting an aluminum and gallium containing source gas toward one or more plates using the first gas path; and A method for forming a thin film, comprising: a step of forming an aluminum gallium nitride thin film by forming hydrogen plasma using a potential difference between the first electrode and the second electrode while injecting a nitrogen-containing reactant gas toward the substrate using the second gas path; 17. In claim 16, The step of forming the hydrogen plasma includes the step of supplying a hydrogen-containing gas to the second gas path, A method for forming a thin film in which the nitrogen-containing reactant gas and the hydrogen-containing gas pass through the second gas path and then through the space between the first electrode and the second electrode.

18. In claim 16, A method for forming a thin film, wherein the temperature inside the chamber is controlled to 200°C to 500°C in the step of forming an aluminum gallium nitride thin film by injecting the aluminum and gallium-containing source gas.

19. In claim 16, A method for forming a thin film, comprising: forming a hydrogen plasma inside the chamber between the step of injecting an aluminum and gallium-containing source gas toward the one or more plates using the first gas path and the step of forming the aluminum gallium nitride thin film.

20. In claim 16, In the step of injecting aluminum and gallium containing source gas toward one or more plates using the first gas path, A method for forming a thin film, comprising the step of additionally spraying a doping material containing at least one of antimony (Sb), phosphorus (P), boron (B), gallium (Ga), and indium (In).

Images