Organic light-emitting display device

Abstract

An organic light-emitting display device may comprise: power wiring provided on a substrate; a bank disposed on the power wiring and disposed in a non-light-emitting area; first to third connection patterns disposed on the bank and arranged to extend from a light-emitting area to the non-light-emitting area; a power connection structure disposed on the power wiring; first to third cathode connection structures disposed on the first to third connection patterns; and a bridge electrode disposed on the first to the third connection patterns, electrically connected to the power wiring via the power connection structure, and electrically connected to the first to third connection patterns via the first to third cathode connection structures.

Description

organic light emitting display device

[0001] The present invention relates to an organic light emitting display device, a manufacturing method thereof, and a manufacturing system thereof.

[0002] As demand for portable information media grows, efforts are expanding to apply organic light-emitting diode (OLED) displays to a variety of lightweight and thin information electronic devices. Recently, OLED displays are increasingly being applied to product groups such as mobile PCs and automobiles, rather than TVs or mobile phones. Because OLED displays used in mobile PCs and automobiles display still images for extended periods of time, long lifespan is essential. To achieve long lifespan, light extraction from the OLEDs in the OLED display must be maximized. Furthermore, to reduce costs, technology must be expanded to enable the production of OLEDs on substrates of not only 8.5th-generation (2200 x 2500 mm) but also 10.5th-generation (3370 x 2940 mm). To produce long-lasting OLEDs, each subpixel must have a top-emitting structure and a side-by-side structure, with at least two stacks of OLEDs.

[0003] The structure of these organic light-emitting devices can be obtained through deposition equipment using a fine metal mask (FMM, hereinafter referred to as FMM). However, the deposition method using FMM has the problem of low productivity because the production logistics must be produced only in a cluster method rather than an inline method. In addition, it is impossible to manufacture a substrate larger than 20 inches due to the size limitation of the FMM mask. In addition, there is a problem that the pixel position accuracy (PPA) of the subpixel unit between the FMM and the substrate is low. Accordingly, the emission area ratio (EAR) is small, which limits the product life. Here, EAR is the value obtained by dividing the emission area of ​​the subpixel by the total area of ​​the subpixel.

[0004] Therefore, it is very urgent to develop an organic light-emitting display device having a new deposition method and a new organic light-emitting element structure using the new deposition method to solve the aforementioned problems.

[0005] The present invention aims to solve the above-mentioned and other problems.

[0006] Another object of the embodiment is to provide an organic light emitting display device having a novel structure.

[0007] Another object of the present invention is to provide an organic light emitting display device capable of improving lifespan.

[0008] Another object of the present invention is to provide an organic light-emitting display device capable of improving productivity and yield.

[0009] Another object of the present invention is to provide an organic light-emitting display device capable of improving image quality.

[0010] In addition, another object of the embodiment is to provide a method and a manufacturing device for an organic light-emitting display device capable of improving yield and ensuring product reliability.

[0011] The technical problems of the embodiment are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0012] According to one aspect of the embodiment to achieve the above or other objects, an organic light emitting display device includes a pixel including a first subpixel to a third subpixel, wherein the first subpixel to the third subpixel each includes a light emitting region and a non-light emitting region surrounding the light emitting region; a power wiring on the substrate; a bank disposed on the power wiring and disposed in the non-light emitting region; a first connection pattern to a third connection pattern disposed on the bank and disposed to extend from the light emitting region to the non-light emitting region; a power connection structure on the power wiring; a first cathode connection structure to a third cathode connection structure disposed on the first connection pattern to the third connection pattern; And a bridge electrode disposed on the first to third connection patterns, electrically connected to the power wiring through the power connection structure, and electrically connected to the first to third connection patterns through the first to third cathode connection structures; wherein the first subpixel includes a first organic light-emitting element, the second subpixel includes a second organic light-emitting element, and the third subpixel includes a third organic light-emitting element.

[0013] The first to third organic light-emitting elements may each include an anode electrode, an organic light-emitting layer, and a cathode electrode, and the first to third connection patterns may each include an extended organic light-emitting layer formed by extending the organic light-emitting layer from the light-emitting region to the non-light-emitting region; an extended cathode electrode formed by extending the cathode electrode from the light-emitting region to the non-light-emitting region and disposed on the extended organic light-emitting layer; and at least one layer of a cathode protection layer, a subpixel protection layer, and a pixel protection layer disposed on the extended cathode electrode.

[0014] The cathode electrode may include silver (Ag), zinc (Zn), aluminum (Al), and indium (In), and the electron injection layer of the organic light-emitting layer may include a material including at least one selected from among ytterbium (Yb), yttrium (Y), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), calcium (Ca), strontium (Sr), barium (Ba), radium (Ra), scandium (Sc), lanthanum (La), cerium (Ce), ruthenium (Ru), and samarium (Sm) having a work function of 4.0 eV or less.

[0015] The at least one layer may be disposed on the cathode electrode, and the bridge electrode may be disposed on the at least one layer disposed.

[0016] The power connection structure may include a power contact hole formed to expose the power wiring, and the first to third cathode connection structures may each include a first to third cathode contact hole formed to penetrate at least one layer to expose the extended cathode electrode.

[0017] The bridge electrode is electrically connected to the power wiring through the power contact hole, and may be disposed on at least one layer and electrically connected to the extended cathode electrode through the first cathode contact hole to the third cathode contact hole.

[0018] The subpixel protection layer may be disposed on the cathode electrode, the pixel protection layer may be disposed on the subpixel protection layer, and the pixel protection layer may be disposed on a side of the extended cathode electrode in the power contact hole.

[0019] The above pixel protection layer may have a multilayer structure including a transparent resin and an inorganic film or multiple inorganic films on the lower portion of the transparent resin.

[0020] The cathode protective layer may be disposed on the cathode electrode and the extended cathode electrode.

[0021] The cathode protective layer may be disposed on the cathode electrode and the bridge electrode.

[0022] The organic light-emitting display device may further include an encapsulation layer on at least one layer in the light-emitting area and non-light-emitting area of ​​the first to third subpixels.

[0023] The above bridge electrode can be arranged in the light-emitting area and the non-light-emitting area of ​​the first to third subpixels.

[0024] The first to third subpixels may be arranged in a stripe shape along the second direction, respectively, and the power connection structure may be arranged below the bank at an intersection of a non-emission region in the first direction and a non-emission region in the second direction, and the first to third cathode connection structures may be arranged on the bank, respectively.

[0025] The first cathode connection structure may be disposed on the bank between first subpixels adjacent in the second direction, the second cathode connection structure may be disposed on the bank between second subpixels adjacent in the second direction, and the third cathode connection structure may be disposed on the bank between third subpixels adjacent in the second direction.

[0026] The above bridge electrode may include a first bridge electrode arranged across the first cathode connection structure to the third cathode connection structure on the bank along the first direction.

[0027] The above bridge electrode may further include a second bridge electrode electrically connected to the first bridge electrode and arranged lengthwise on the second bank along the second direction.

[0028] The first subpixel and the second subpixel may be arranged in a dot shape, the third subpixel may be arranged in a stripe shape along one direction, and the first cathode connection structure to the third cathode connection structure may be arranged to be spaced as close as possible from the power connection structure.

[0029] The above bridge electrode may be arranged to cover the first cathode connection structure to the third cathode connection structure spaced as close as possible from the power connection structure.

[0030] The above organic light emitting display device may further include a bank protection layer on the bank. The bank may include an organic film, and the bank protection layer may include an inorganic film.

[0031] The effects of the organic light-emitting display device according to the embodiment are described as follows.

[0032] According to at least one of the embodiments, there is an advantage that the process can be simplified and the process cost can be reduced because there is no need to use FMM.

[0033] According to at least one of the embodiments, there is an advantage that the EAR within a subpixel can be increased without the need for using an FMM, thereby improving the lifetime.

[0034] According to at least one of the embodiments, the organic light-emitting device is deposited on a large-area substrate in an inline deposition system, thereby providing advantages in productivity, yield, and material utilization efficiency.

[0035] Further scope of applicability of the embodiments will become apparent from the detailed description below. However, since various changes and modifications within the spirit and scope of the embodiments will be readily apparent to those skilled in the art, it should be understood that the detailed description and specific embodiments, such as preferred embodiments, are given by way of example only.

[0036] FIG. 1 is a plan view illustrating an organic light-emitting display device according to a first embodiment.

[0037] FIG. 2A is a plan view illustrating an organic light-emitting display device according to a second embodiment.

[0038] FIG. 2b is a plan view illustrating an organic light-emitting display device according to a third embodiment.

[0039] Figures 3a and 3b schematically illustrate pixel structures according to comparative examples and embodiments.

[0040] Fig. 4 is a cross-sectional view illustrating an organic light-emitting display device according to a fourth embodiment.

[0041] FIG. 5 is a cross-sectional view illustrating an organic light-emitting display device according to a fifth embodiment.

[0042] FIG. 6 is a cross-sectional view illustrating an organic light-emitting display device according to a sixth embodiment.

[0043] FIG. 7 is a plan view illustrating an organic light-emitting display device according to the seventh embodiment.

[0044] Fig. 8 is a cross-sectional view illustrating an organic light-emitting display device according to the eighth embodiment.

[0045] Fig. 9 is a cross-sectional view illustrating an organic light-emitting display device according to a ninth embodiment.

[0046] Fig. 10 is a plan view illustrating an organic light emitting display device according to the 10th embodiment.

[0047] Fig. 11 is a plan view illustrating an organic light emitting display device according to an 11th embodiment.

[0048] Fig. 12 is a cross-sectional view illustrating an organic light-emitting display device according to the 12th embodiment.

[0049] FIG. 13 is a cross-sectional view illustrating a third subpixel of an organic light-emitting display device according to the 13th embodiment.

[0050] Fig. 14 is a cross-sectional view illustrating one pixel of an organic light-emitting display device according to the 14th embodiment.

[0051] Fig. 15 illustrates a procedure of a manufacturing process of an organic light-emitting display device according to an embodiment.

[0052] Fig. 16 illustrates a manufacturing system for an organic light-emitting display device according to an embodiment.

[0053] Figures 17a to 17q are cross-sectional views illustrating a manufacturing process of an organic light-emitting display device.

[0054] FIG. 18a and FIG. 18b are a plan view and a cross-sectional view, respectively, illustrating an organic light-emitting display device according to the 15th embodiment.

[0055] The sizes, shapes, and dimensions of components depicted in the drawings may differ from the actual components. Furthermore, even if the same components are depicted with different sizes, shapes, and dimensions across drawings, this is merely an example within the drawings, and the same components may have the same sizes, shapes, and dimensions across drawings.

[0056] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. Regardless of the drawing numbers, identical or similar components will be given the same reference numbers and redundant descriptions thereof will be omitted. The suffixes 'module' and 'part' used for components in the following description are given or used interchangeably in consideration of the ease of writing the specification, and do not have distinct meanings or roles in themselves. In addition, the attached drawings are intended to make it easier to understand the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is referred to as existing 'on' another element, this includes that it may be directly on the other element or that other intermediate elements may exist therebetween.

[0057] As described above, in order to solve the problems in the deposition method using FMM, a new subpixel formation structure, manufacturing process and manufacturing device therefor are proposed.

[0058] In an embodiment, each subpixel constituting a pixel can be formed using photolithography (hereinafter referred to as "photo") and etching. This increases the aperture ratio, thereby improving brightness and lifespan. Furthermore, since it is possible to manufacture a large-area substrate equivalent to 10.5 generations, it is possible to manufacture panels larger than 100 inches. Furthermore, the manufacturing system can be configured in-line, thereby improving productivity.

[0059] Meanwhile, as the board size increases, the length of the power wiring on the board may also increase. This increased power wiring length can lead to a greater voltage drop, which can lower brightness and reduce image quality.

[0060] Accordingly, in a substrate of a certain size, for example, 20” or larger, electrical contact structures between subpixels and power wiring are provided at multiple locations on the substrate, thereby minimizing voltage drop and preventing a decrease in brightness or luminance, thereby improving image quality.

[0061] In an embodiment, a plurality of subpixels constituting a pixel may be formed using photolithography and etching, and an electrical connection structure between power wiring and each subpixel may be formed.

[0062] Such a structure can be realized by the unique technology of the present invention, namely, a manufacturing process that allows patterning of a current subpixel and deposition of a next subpixel to be performed continuously in a vacuum atmosphere, and a manufacturing system for performing the same. In addition, the present invention can be realized by a manufacturing process that allows patterning of a contact hole and deposition of a bridge electrode, and patterning of the bridge electrode and deposition of an encapsulating layer to be performed continuously in a vacuum atmosphere, and a manufacturing system for performing the same.

[0063] Therefore, even if the cathode electrode or the extended cathode electrode exposed by the patterning of the current subpixel is covered by the deposition of the next subpixel and is exposed to the atmosphere for a photo process as a subsequent process, the cathode electrode or the extended cathode electrode may not be oxidized by oxygen in the atmosphere. In addition, even if the cathode electrode or the extended cathode electrode exposed by the patterning of the contact hole is covered by the deposition of the bridge electrode and is exposed to the atmosphere for a photo process as a subsequent process, the cathode electrode or the extended cathode electrode may not be oxidized by oxygen in the atmosphere. In addition, since the cathode electrode or the extended cathode electrode exposed by the patterning of the bridge electrode is continuously deposited with an encapsulation layer while maintaining a vacuum, the cathode is not only prevented from being oxidized in the atmosphere, but can also be covered by the encapsulation layer. Accordingly, even if exposed to the atmosphere for a photo process as a subsequent process, the cathode electrode or the extended cathode electrode may not be oxidized by oxygen in the atmosphere.

[0064] Additionally, a reverse voltage can be applied to the organic light-emitting element in an atmosphere containing a small amount of oxygen or moisture while maintaining a vacuum with the cathode electrode exposed.

[0065] In the case of subpixels in which the organic light-emitting element has an electrical leak or short circuit and has become a dark spot, the cathode metal is partially oxidized or removed by overcurrent.

[0066] Through this process, dark subpixels are repaired back to normal subpixels. This drastic reduction in the number of dark spots per panel (from 100 to 3), a key specification for quality panels, can improve yield.

[0067] The aforementioned manufacturing process can be implemented using an inline manufacturing system. This can improve productivity, yield, and material utilization efficiency.

[0068] Hereinafter, an organic light-emitting display device, a manufacturing method thereof, and a manufacturing system thereof will be described in detail.

[0069] [Organic light-emitting display device]

[0070] FIG. 1 is a plan view illustrating an organic light-emitting display device according to a first embodiment.

[0071] As illustrated in FIG. 1, the organic light-emitting display device according to the first embodiment may include a plurality of pixels (P) arranged in a matrix. The plurality of pixels (P) may be arranged in a display area. The remaining area excluding the display area may be defined as a non-display area. The non-display area may be provided along the bezel area of ​​the substrate (100).

[0072] The plurality of pixels (P) may include, for example, a plurality of first subpixels (SPr), a plurality of second subpixels (SPg), a plurality of third subpixels (SPb), etc. The plurality of subpixels (SPr, SPg, SPb) may have different colors along the first direction (X) and the same color along the second direction (Y) intersecting the first direction (X), but this is not limited thereto. That is, the plurality of subpixels (SPr, SPg, SPb) may have the same color along the second direction (Y) and have a long stripe pattern (or stripe shape).

[0073] The first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) may each include an emitting region (EAr, EAg, EAb) and a non-emitting region (NEA-1, NEA-2). The non-emitting region (NEA-1, NEA-2) may surround the emitting region (EAr, EAg, EAb).

[0074] A first organic light-emitting element (140r) may be disposed in a first subpixel (SPr), a second organic light-emitting element (140g) may be disposed in a second subpixel (SPg), and a third organic light-emitting element (140b) may be disposed in a third subpixel (SPb). The first organic light-emitting element (140r) may emit first color light, the second organic light-emitting element (140g) may emit second color light, and the third organic light-emitting element (140b) may emit third color light. The first color light may be red light, the second color light may be green light, and the third color light may be blue light.

[0075] The first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) may include an anode electrode, an organic light-emitting layer, and a cathode electrode.

[0076] The organic light-emitting layer may include a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, a charge generation layer, etc. The first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) may each include at least two organic light-emitting stack structures. Each organic light-emitting stack structure includes an organic light-emitting layer that emits light, and a charge generation layer may be provided between the organic light-emitting stack structures.

[0077] The anode electrode may be arranged in the light-emitting area (EAr, EAg, EAb) of each of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb). The area of ​​the light-emitting area (EAr, EAg, EAb) may be determined by the area of ​​the anode electrode in contact with the organic light-emitting layer, but is not limited thereto.

[0078] For example, the organic light-emitting layer and the cathode electrode may have a stripe pattern having the same color and being arranged elongated along the second direction (Y). For example, the first organic light-emitting layer (142r) and the first cathode electrode (143r) of the first organic light-emitting element (140r) may be arranged in a stripe shape along the second direction (Y). For example, the second organic light-emitting layer (142g) and the second cathode electrode (143g) of the second organic light-emitting element (140g) may be arranged in a stripe shape along the second direction (Y). For example, the third organic light-emitting layer (142b) and the third cathode electrode (143b) of the third organic light-emitting element (140b) may be arranged in a stripe shape along the second direction (Y).

[0079] The first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) are alternately arranged in a column-line unit along the first direction (X), so that an organic light-emitting display device having a side-by-side structure can be implemented. For example, the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) may be alternately arranged in the order of the first direction (X), but this is not limited thereto. For example, the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) may be alternately arranged in the order of the first direction (X).

[0080] The areas of the light-emitting areas (EAr, EAg, EAb) of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) may be different. For example, the light-emitting efficiency of the third organic light-emitting element (140b) may be lower than the light-emitting efficiency of the first organic light-emitting element (140r) or the second organic light-emitting element (140g). In this case, the area of ​​the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) is designed to be larger than the area of ​​the light-emitting area (EAr, EAg, EAb) of the first subpixel (SPr) or the area of ​​the light-emitting area (EAr, EAg, EAb) of the second subpixel (SPg), thereby making the lifespans of the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) uniform, thereby improving the brightness of the product.

[0081] Meanwhile, power wires (111, 112) may be arranged in the display area through the non-display area. A low voltage or low voltage may be supplied to the power wires (111, 112). The low voltage or low voltage may be, for example, 0 V or a voltage close thereto. Although not shown, another wire may be arranged in the display area and the non-display area. A high voltage or high voltage may be supplied to another power wire (111, 112).

[0082] The power wires (111, 112) may be arranged in a matrix form in the display area, but are not limited thereto. The power wires (111, 112) arranged in the non-display area and the power wires (111, 112) arranged in the display area may be arranged on different layers, but are not limited thereto. In this case, among the power wires (111, 112) arranged in the display area, at least one power wire (111, 112) may extend to the non-display area and be electrically connected to the power wires (111, 112) arranged in the non-display area through a via hole in the non-display area. The power wires (111, 112) arranged in the display area may be referred to as auxiliary electrodes. The power wires (111, 112) may be arranged on the same layer as the anode electrode, but are not limited thereto.

[0083] Meanwhile, the first connection pattern (140ra), the second connection pattern (140ga), and the third connection pattern (140ba) may be arranged to extend from the light-emitting region (EAr, EAg, EAb) to the non-light-emitting region (NEA-1, NEA-2), respectively.

[0084] The second power wiring (112) can be electrically connected to the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) through the first connection pattern (140ra) to the third connection pattern (140ba).

[0085] The bridge electrode (190) may have a bar shape that is arranged long along one direction (X).

[0086] The bridge electrode (190) may be disposed on the first connection pattern (140ra) to the third connection pattern (140ba), so that the second power wiring (112) and the first connection pattern (140ra) to the third connection pattern (140ba) may be electrically connected through the bridge electrode (190). The bridge electrode (190) may not be disposed on the light-emitting areas (EAr, EAg, EAb) of the first subpixel (SPr) to the third subpixel (SPb), that is, the first organic light-emitting element (140r) to the third organic light-emitting element (140b). The bridge electrode (190) may not vertically overlap the first organic light-emitting element (140r) to the third organic light-emitting element (140b), but may vertically overlap the first connection pattern (140ra) to the third connection pattern (140ba). Accordingly, the EAR may be increased. Meanwhile, when the bridge electrode (190) is formed of a transparent conductive film, the bridge electrode (190) may be placed in a part or the entire area of ​​the first subpixel (SPr) to the third subpixel (SPb).

[0087] The power connection structure (170) can be placed under the bank (120) at the intersection of the non-luminous area (NEA-1) in the first direction and the non-luminous area (NEA-2) in the second direction.

[0088] The first cathode connection structure (181) to the third cathode connection structure (183) may each be disposed on a bank (120). The first cathode connection structure (181) may be disposed on a bank (120) between first subpixels (SPr) adjacent in the second direction. The second cathode connection structure (182) may be disposed on a bank (120) between second subpixels (SPg) adjacent in the second direction. The third cathode connection structure (183) may be disposed on the bank (120) between third subpixels (SPb) adjacent in the second direction.

[0089] A power connection structure (170) may be provided on the power wiring (111, 112) at the intersection of the non-luminescent area (NEA-1) in the first direction and the non-luminescent area (NEA-2) in the second direction, and the first cathode connection structure (181) to the third cathode connection structure (183) may be provided on the first connection pattern (140ra) to the third connection pattern (140ba).

[0090] The first cathode connection structure (181) may be arranged on the first connection pattern (140ra) in the second direction, the second cathode connection structure (182) may be arranged on the second connection pattern (140ga) in the second direction, and the third cathode connection structure (183) may be arranged on the third connection pattern (140ba) in the second direction.

[0091] The bridge electrode (190) is electrically connected to the power wiring (111, 112) through the power connection structure (170), and can be electrically connected to the first connection pattern (140ra) through the third connection pattern (140ba) through the first cathode connection structure (181) through the third cathode connection structure (183).

[0092] The bridge electrode (190) may be made of a conductive material with excellent electrical conductivity. For example, the bridge electrode (190) may include aluminum (Al), molybdenum (Mo), etc. For example, the bridge electrode (190) may include an alloy such as MoTi, which has aluminum (Al) or molybdenum (Mo) as its main component. For example, the bridge electrode (190) may be a transparent conductive film such as ITO or IZO.

[0093] The bridge electrode (190) can be arranged across the first cathode connection structure (181) to the third cathode connection structure (183) along the first direction.

[0094] Although not shown, the bridge electrodes (190) may be arranged in a matrix form while being connected to a plurality of power contact holes (171) along the second direction (Y). Accordingly, the resistance of the power wiring (111, 112) may be further reduced, thereby improving image quality.

[0095] In addition, although not shown, when the photoresist resin made of black resin is not stripped (or removed) after patterning is completed to pattern the bridge electrode (190) and the bridge electrode (190) is covered by the photoresist resin made of black resin, the reflected light is reduced, light leakage is reduced, and image quality such as contrast ratio can be improved.

[0096] Accordingly, the low voltage supplied to the power wiring (111, 112) can be electrically connected to the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) through the bridge electrode (190) and the first to third connection patterns (140ra) to (140ba).

[0097] FIG. 2A is a plan view illustrating an organic light-emitting display device according to a second embodiment.

[0098] The second embodiment is identical to the first embodiment (Fig. 1) except for the arrangement structure of the plurality of subpixels (SPr, SPg, SPb). In the second embodiment, components having the same shape, structure, and / or function as those in the first embodiment (Fig. 1) are given the same drawing reference numerals and detailed descriptions are omitted.

[0099] As illustrated in FIG. 2a, the plurality of pixels (P) may include a plurality of first subpixels (SPr), a plurality of second subpixels (SPg), a plurality of third subpixels (SPb), etc.

[0100] The first subpixel (SPr) to the third subpixel (SPb) may have a structure in which a dot shape and a stripe shape are mixed.

[0101] The first subpixel (SPr) and the second subpixel (SPg) may each be arranged in a dot shape. A plurality of first subpixels (SPr) may be arranged along the second direction (Y). A plurality of second subpixels (SPg) may be arranged between a plurality of first subpixels (SPr) along the second direction (Y). That is, the first subpixels (SPr) and the second subpixels (SPg) may be arranged alternately in the order of the first subpixels (SPr) and the second subpixels (SPg) along the second direction (Y).

[0102] The plurality of third subpixels (SPb) may have a stripe pattern (or stripe shape) having the same color and being arranged in a long manner along the second direction (Y). The plurality of third subpixels (SPb) may be arranged parallel to the plurality of first subpixels (SPr) and the plurality of second subpixels (SPg) in the second direction (Y). For example, the area of ​​the third subpixel (SPb) may be equal to or similar to the sum of the areas of the first subpixel (SPr) and the second subpixel (SPg).

[0103] The first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) may each include an emitting area (EAr, EAg, EAb) and a non-emitting area (NEA). The non-emitting area (NEA) may surround the emitting area (EAr, EAg, EAb).

[0104] The first organic light-emitting element (140r) may be placed in the first subpixel (SPr), the second organic light-emitting element (140g) may be placed in the second subpixel (SPg), and the third organic light-emitting element (140b) may be placed in the third subpixel (SPb).

[0105] The first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) may include an anode electrode, an organic light-emitting layer, and a cathode electrode.

[0106] The anode electrodes of each of the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) can be individually arranged in the light-emitting area (EAr, EAg, EAb) of the first subpixel (SPr), the light-emitting area (EAr, EAg, EAb) of the second subpixel (SPg), and the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb).

[0107] The organic light-emitting layer and the cathode electrode of each of the first organic light-emitting element (140r) and the second organic light-emitting element (140g) may be individually disposed in the light-emitting areas (EAr, EAg, EAb) of the first subpixel (SPr) and the light-emitting areas (EAr, EAg, EAb) of the second subpixel (SPg). The organic light-emitting layer and the cathode electrode of the third organic light-emitting element (140b) may be disposed in a stripe shape along the second direction. That is, the organic light-emitting layer and the cathode electrode of the third organic light-emitting element (140b) may be disposed not only in the light-emitting areas (EAr, EAg, EAb) of the plurality of third subpixels (SPb) along the second direction but also in the non-light-emitting area (NEA).

[0108] Meanwhile, the first connection pattern (140ra), the second connection pattern (140ga), and the third connection pattern (140ba) may be arranged to extend from the light-emitting area (EAr, EAg, EAb) to the non-light-emitting area (NEA), respectively.

[0109] The first cathode connection structure (181), the second cathode connection structure (182), and the third cathode connection structure (183) may each be positioned at the closest distance from the power connection structure (170).

[0110] The first cathode connection structure (181) may be disposed on the first connection pattern (140ra) along the first diagonal direction, and the second cathode connection structure (182) may be disposed on the second connection pattern (140ga) along the second diagonal direction. The second diagonal direction may be a direction rotated 90 degrees counterclockwise with respect to the first diagonal direction. The third cathode connection structure (183) may be disposed on the third connection pattern (140ba) along the horizontal direction between the first subpixel (SPr) and the second subpixel (SPg).

[0111] The second power wiring (112) can be electrically connected to the first organic light-emitting element (140r) of the first subpixel (SPr), the second organic light-emitting element (140g) of the second subpixel (SPg), and the third organic light-emitting element (140b) of the third subpixel (SPb) through the first connection pattern (140ra) to the third connection pattern (140ba).

[0112] Bridge electrodes (190) can be individually arranged in multiple pixels. Bridge electrodes (190) can be arranged in dot or pattern form in each pixel.

[0113] A bridge electrode (190) is arranged on the first connection pattern (140ra) to the third connection pattern (140ba), so that the second power wiring (112) and the first connection pattern (140ra) to the third connection pattern (140ba) can be electrically connected through the bridge electrode (190).

[0114] A power connection structure (170) may be provided on the power wiring (111, 112), and a first cathode connection structure (181) to a third cathode connection structure (183) may be provided on the first connection pattern (140ra) to the third connection pattern (140ba).

[0115] The bridge electrode (190) is electrically connected to the power wiring (111, 112) through the power connection structure (170), and can be electrically connected to the first connection pattern (140ra) through the third connection pattern (140ba) through the first cathode connection structure (181) through the third cathode connection structure (183).

[0116] The bridge electrode (190) can be arranged to cover the first cathode connection structure (181) to the third cathode connection structure (183) spaced as close as possible from the power connection structure (170).

[0117] Accordingly, the low voltage supplied to the power wiring (111, 112) can be electrically connected to the first organic light-emitting element (140r), the second organic light-emitting element (140g), and the third organic light-emitting element (140b) through the bridge electrode (190) and the first to third connection patterns (140ra) to (140ba).

[0118] Fig. 2b is a plan view illustrating an organic light-emitting display device according to a third embodiment. Fig. 2b is identical to the second embodiment (Fig. 2a) except for the location of the power connection structure (170).

[0119] As illustrated in FIG. 2B, the power connection structure (170) may be arranged in a crossroad area where four subpixels meet. Among the four subpixels, the second subpixel (SPg) and the third subpixel (SPb) may be included in the first pixel (P1), and the first subpixel (SPr) and the third subpixel (SPb) may be included in the second pixel (P2). The first pixel (P1) and the second pixel (P2) may be positioned adjacent to each other. This arrangement structure of the power connection structure (170) may be advantageous for the arrangement of the power connection structure (170) because there is a lot of free space in the crossroad area and the power wiring (112) can easily cross in the first direction (X) and the second direction (Y).

[0120] Figures 3a and 3b schematically illustrate pixel structures according to comparative examples and embodiments.

[0121] In the comparative example (Fig. 3a), three power connection structures (170r, 170g, 170b) are provided for one pixel, whereas in the embodiment (Fig. 3b), one power connection structure (170) may be provided for one pixel.

[0122] In the comparative example (Fig. 3a), the first power connection structure (170r), the second power connection structure (170g), and the third power connection structure (170b) can be electrically connected to the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb), respectively. In contrast, in the embodiment (Fig. 3b), one power connection structure (170) can be commonly connected to three subpixels (SPr, SPg, SPb).

[0123] For example, when 100 pixels are provided on a substrate (100), 300 power connection structures (170) are formed in the comparative example (Fig. 3a), whereas 100 power connection structures (170) can be formed in the embodiment (Fig. 3b).

[0124] Accordingly, since the embodiment only needs to form 1 / 3 of the power connection structures (170) compared to the comparative example, the aperture ratio can be increased, thereby improving the brightness and lifespan. In addition, since the embodiment only needs to form 1 / 3 of the power connection structures (170) compared to the comparative example, the structure can be simplified and the process time and process cost can be reduced. In addition, since the embodiment only needs to form 1 / 3 of the power connection structures (170) compared to the comparative example, defects in the manufacturing process can be prevented. Fig. 4 is a cross-sectional view illustrating an organic light emitting display device according to the fourth embodiment. Fig. 4 illustrates a connection structure between the third subpixel (SPb) and the power wiring (111, 112) along the A-A' line of Figs. 1, 2A, and 2B, respectively. Although not shown, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be the same as the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0125] Referring to FIG. 4, an organic light-emitting display device according to the fourth embodiment may include a bank (120), a third organic light-emitting element (140b), a third connection pattern (140ba), a power connection structure (170), a third cathode connection structure (183), a bridge electrode (190), etc.

[0126] A third subpixel (SPb) may be provided on the substrate (100). The third subpixel (SPb) may include light-emitting regions (EAr, EAg, EAb) and non-light-emitting regions (NEA-1, NEA-2).

[0127] The third organic light-emitting element (140b) may be arranged in the third subpixel (SPb). The third organic light-emitting element (140b) may include a third anode electrode (141b), a third organic light-emitting layer (142b), a third cathode electrode (143b), etc.

[0128] The third anode electrode (141b) may be arranged in each of the light-emitting areas (EAr, EAg, EAb) of the plurality of third subpixels (SPb). Accordingly, the third anode electrodes (141b) arranged in the light-emitting areas (EAr, EAg, EAb) of adjacent third subpixels (SPb) may be arranged to be spaced apart from each other.

[0129] As illustrated in FIG. 1, the third organic light-emitting layer (142b) and the third cathode electrode (143b) may be arranged in a stripe shape along the second direction. In this case, the third organic light-emitting layer (142b) and the third cathode electrode (143b) may be arranged not only in the light-emitting areas (EAr, EAg, EAb) of the plurality of third sub-pixels (SPb) along the second direction, but also in the non-light-emitting areas (NEA-1, NEA-2).

[0130] Power wiring (111, 112) can be placed on the substrate (100).

[0131] Although not shown, a third driving circuit and an interlayer insulating layer may be disposed on the substrate (100). The interlayer insulating layer may be referred to as a protective layer, a planarization layer, or the like. The third driving circuit may be electrically connected to the anode electrode of the third organic light-emitting element (140b) through a through hole of the interlayer insulating layer.

[0132] A bank (120) may be placed on a substrate (100). The bank (120) may be placed on power wiring (111, 112).

[0133] The anode electrode and the power wiring (111, 112) may be arranged on the same layer. The anode electrode and the power wiring (111, 112) may be formed simultaneously using the same material and the same photo and etching, but this is not limited thereto. The power wiring (111, 112) may also be electrically connected to the power wiring (111, 112) formed together with the gate electrode or the drain electrode of the third driving circuit through the through hole of the interlayer insulating layer. The power wiring (111, 112) arranged on the interlayer insulating layer may be called an auxiliary electrode, and the power wiring (111, 112) arranged under the interlayer insulating layer may be called a main power wiring (111, 112). The main power wire (111, 112) may extend from the display area to the non-display area and be electrically connected to another main power wire (111, 112) connected to the input terminal in the non-display area, but is not limited thereto.

[0134] The banks (120) may be arranged in the non-emission areas (NEA-1, NEA-2) of the adjacent plurality of third subpixels (SPb). The banks (120) may be arranged in the non-emission areas (NEA-1, NEA-2) of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb), respectively. As illustrated in FIG. 1, the banks (120) may be arranged in a matrix in the non-emission areas (NEA-1, NEA-2) of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb), respectively, along the first direction and the second direction. As shown in FIGS. 2a and 2b, the banks (120) can be arranged in a matrix in the non-emitting areas (NEA-1, NEA-2) of each of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb).

[0135] Meanwhile, the third connection pattern (140ba) may be arranged in the non-emission areas (NEA-1, NEA-2) of the third subpixel (SPb). The third connection pattern (140ba) may be arranged on the bank (120) and may be arranged to extend from the emission areas (EAr, EAg, EAb) of the third subpixel (SPb) to the non-emission areas (NEA-1, NEA-2).

[0136] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), a third cathode protection layer (145b), and a third subpixel protection layer (151b). The third extended organic light-emitting layer (142ba) may be disposed on the bank (120), and the third extended cathode electrode (143ba) may be disposed on the third extended organic light-emitting layer (142ba). The third cathode protection layer (145b) may be disposed on the third extended cathode electrode (143ba), and the third subpixel protection layer (151b) may be disposed on the third extended cathode electrode (143ba).

[0137] The third extended organic light-emitting layer (142ba) may be formed by extending the third organic light-emitting layer (142b) of the third organic light-emitting element (140b) from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2). The third extended cathode electrode (143ba) may be formed by extending the third cathode electrode (143b) of the third organic light-emitting element (140b) from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2).

[0138] The third cathode protection layer (145b) may be disposed on the third cathode electrode (143b) in the light-emitting areas (EAr, EAg, EAb) of the plurality of third subpixels (SPb) along the second direction, as illustrated in FIGS. 1, 2a, and 2b, and may be disposed on the third extended cathode electrode (143ba) in the non-light-emitting areas (NEA-1, NEA-2) of the third subpixels (SPb).

[0139] The third cathode protection layer (145b) may be disposed on the third cathode electrode (143b) of the third organic light-emitting element (140b) and / or the third extended cathode electrode (143ba) of the third connection pattern (140ba).

[0140] The third cathode protection layer (145b) may be called a capping layer, a device protection layer, an optical compensation layer, etc.

[0141] The third cathode protection layer (145b) can physically, electrically, and / or optically protect the third cathode electrode (143b) and the third extended cathode electrode (143ba). For example, the third cathode protection layer (145b) can prevent damage to the cathode electrode caused by static electricity in the PECVD device during the film formation process of the subpixel protection layer (151b), which is the next process. For example, the third cathode protection layer (145b) can play an auxiliary role in the constructive interference of the third color light generated in the third organic light-emitting layer (142b) between the third anode electrode (141b) and the third cathode electrode (143b). That is, the third cathode protective layer (145b) can improve the luminous efficiency by reflecting the third color light again at the interface between the third cathode electrode (143b) and the third cathode protective layer (145b) having a high refractive index. In addition, the third cathode protective layer (145b) is configured as a multilayer film with another cathode protective layer having a low refractive index added thereto, so that the optimal refractive index can be set so as to extract more third color light to the outside and maximize light extraction. In this case, the third cathode protective layer (145b) can be called a light extraction layer or an optical compensation layer.

[0142] The third subpixel protection layer (151b) may be disposed on the third cathode protection layer (145b). As illustrated in FIG. 1, when the third organic light-emitting layer (142b) or the third cathode electrode (143b) is disposed in a stripe pattern along the second direction, the third subpixel protection layer (151b) may also be disposed in a stripe pattern along the second direction.

[0143] The third subpixel protective layer (151b) may include an insulating organic material, an inorganic material, or an insulating oxide film. The organic material may include polyimide, etc., the inorganic material may include SiO2, SiON, SiNx, etc., and the insulating oxide film may include Al2O3, etc.

[0144] The third subpixel protective layer (151b) may be at least one inorganic film. The third subpixel protective layer (151b) may include a multilayer film including a capping layer.

[0145] For example, the third subpixel protection layer (151b) may be composed of a double layer including a silicon-based or aluminum-based oxide layer and a silicon-based nitride layer. The nitride layer may be disposed on the oxide layer. For example, the oxide layer may be formed using an ALD (atomic layer deposition) process, and the nitride layer may be formed using a CVD (chemical vapor deposition) process. The ALD process has excellent step coverage, so it can completely cover particles that may be generated in previous processes such as dry etching, ashing, and deposition, thereby environmentally protecting the third cathode electrode (143b) together with the continuously formed inorganic film. In the next process, which is a photo process, the developing solution may not penetrate into the third cathode electrode (143b) and the third extended cathode electrode (143ba).

[0146] The shape of the third subpixel protective layer (151b) may be the same as the shape of the third cathode protective layer (145b). The area of ​​the third subpixel protective layer (151b) may be the same as the area of ​​the third cathode protective layer (145b).

[0147] The third subpixel protective layer (151b) can physically, environmentally, electrically and / or optically protect the third cathode electrode (143b), the third extended cathode electrode (143ba), the third organic light-emitting layer (142b) and / or the third extended organic light-emitting layer (142ba).

[0148] The third cathode protection layer (145b) and the third subpixel protection layer (151b) may optionally be employed only in one case.

[0149] Meanwhile, a power connection structure (170) may be placed on the power wiring (111, 112), and a third cathode connection structure (183) may be placed on the third connection pattern (140ba).

[0150] The power connection structure (170) may be a structure for electrically connecting the bridge electrode (190) to the power wiring (111, 112). The third cathode connection structure (183) may be a structure for electrically connecting the bridge electrode (190) to the third connection pattern (140ba). Specifically, the third cathode connection structure (183) may be a structure for electrically connecting the bridge electrode (190) to the third extension cathode electrode (143ba) of the third connection pattern (140ba).

[0151] The power connection structure (170) may include a power contact hole (171), and the third cathode connection structure (183) may include a third cathode contact hole (188). The power contact hole (171) may be formed so that the power wiring (111, 112) is exposed. The third cathode connection structure (183) may be formed by penetrating the third cathode protection layer (145b) and the third subpixel protection layer (151b) so that the third extended cathode electrode (143ba) is exposed.

[0152] The bridge electrode (190) may be disposed on the third subpixel protective layer (151b). The bridge electrode (190) may electrically connect the power connection structure (170) and the third cathode connection structure (183) on the third subpixel protective layer (151b). The bridge electrode (190) may be electrically connected to the power wiring (111, 112) through the power contact hole (171). The bridge electrode (190) may be electrically connected to the third extended cathode electrode (143ba) of the third connection pattern (140ba) through the third cathode contact hole (188).

[0153] In addition, the bridge electrode (190) can be placed only in the non-emitting area (NEA) as in FIGS. 1 and 2, but when a transparent conductive film is used, it can be placed on the entire display area as in FIG. 7, and can be placed in a matrix form in the non-emitting area (NEA) as in FIGS. 10 and 11.

[0154] Accordingly, the low voltage supplied to the power wiring (111, 112) can be supplied to the third cathode electrode (143b) of the third organic light-emitting element (140b) through the power contact hole (171), the bridge electrode (190), the third cathode contact hole (188), and the third extended cathode electrode (143ba).

[0155] Meanwhile, an encapsulation layer (160) may be disposed on the substrate (100). The encapsulation layer (160) may be disposed in the non-emission areas (NEA-1, NEA-2) as well as the emission areas (EAr, EAg, EAb) of the third subpixel (SPb). The encapsulation layer (160) may be disposed on the third subpixel protective layer (151b) in the emission areas (EAr, EAg, EAb) and the non-emission areas (NEA-1, NEA-2) of the third subpixel (SPb), and may be disposed on the bridge electrode (190), the power connection structure (170), and the third cathode connection structure (183) in the non-emission areas (NEA-1, NEA-2) of the third subpixel (SPb).

[0156] Meanwhile, a bank protection layer (130) may be placed on the bank (120). The bank protection layer (130) may include an inorganic film.

[0157] When the subpixel protection layer (150b), the third cathode electrode (143b), the third organic light-emitting layer (142b), etc. are patterned using photolithography and etching, the bank (120) made of an organic material can also be etched.

[0158] However, since the bank protection layer (130) is disposed on the bank (120), even if the subpixel protection layer (150b), the third cathode electrode (143b), the third organic light-emitting layer (142b), etc. are patterned, loss of the bank (120) can be prevented by the bank protection layer (130). If the bank (120) is made of an inorganic material, the bank protection layer (130) can be omitted.

[0159] Fig. 5 is a cross-sectional view illustrating an organic light emitting display device according to a fifth embodiment. Fig. 5 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along the line A-A' of each of Figs. 1, 2a, and 2b. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0160] The fifth embodiment is identical to the fourth embodiment (Fig. 4) except for the pixel protection layer (152). In the fifth embodiment, components having the same shape, structure, and / or function as those in the fourth embodiment (Fig. 4) are given the same drawing reference numerals and detailed descriptions are omitted.

[0161] Referring to FIG. 5, an organic light-emitting display device according to the fifth embodiment may include a bank (120), a third organic light-emitting element (140b), a third connection pattern (140ba), a power connection structure (170), a third cathode connection structure (183), a bridge electrode (190), etc.

[0162] The third connection pattern (140ba) may be arranged to extend from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2) on the bank (120).

[0163] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), a third cathode protective layer (145b), a third subpixel protective layer (151b), and a pixel protective layer (152).

[0164] The third subpixel protection layer (151b) may be disposed on the third cathode protection layer (145b). If the third cathode protection layer (145b) is omitted, the third subpixel protection layer (151b) may be in contact with the upper surface of the cathode electrode of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba).

[0165] The third subpixel protective layer (151b) can physically, environmentally, electrically and / or optically protect the third cathode electrode (143b), the third extended cathode electrode (143ba), the third organic light-emitting layer (142b) and / or the third extended organic light-emitting layer (142ba).

[0166] For example, the third subpixel protection layer (151b) can prevent the third cathode electrode (143b) and the third extended cathode electrode (143ba) from being oxidized when the substrate (100) is moved and exposed to the atmosphere for a subsequent process. For example, the third subpixel protection layer (151b) can protect the third cathode electrode (143b) and the third extended cathode electrode (143ba) from foreign substances, etc., when the substrate (100) is moved and exposed to the atmosphere for a subsequent process. For example, the third subpixel protection layer (151b) can prevent moisture, oxygen, etc. from penetrating into the third organic light-emitting layer (142b) and the third extended organic light-emitting layer (142ba). For example, the third subpixel protective layer (151b) can allow the third color light generated from the third organic light-emitting layer (142b) to be well extracted to the outside by causing constructive interference between the third anode electrode (141b) and the third cathode electrode (143b). For example, the third subpixel protective layer (151b) can have an optimal refractive index set to maximize light extraction by considering the refractive index of the third organic light-emitting layer (142b) and the refractive index of the atmosphere. In this case, the third subpixel protective layer (151b) can be referred to as a light extraction layer or an optical compensation layer.

[0167] Meanwhile, the pixel protection layer (152) may be arranged in a plate shape on the substrate (100). The pixel protection layer (152) may be arranged in the display area of ​​the substrate (100). The pixel protection layer (152) may be arranged in the light-emitting areas (EAr, EAg, EAb) and non-light-emitting areas (NEA-1, NEA-2) of each of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) of each of the plurality of pixels.

[0168] Referring again to FIG. 5, the pixel protection layer (152) may be disposed on the side of the third connection pattern (140ba) as well as on the upper side of the third subpixel protection layer (151b). For example, the pixel protection layer (152) may be disposed on the side of the third extended organic light-emitting layer (142ba) of the third connection pattern (140ba).

[0169] The pixel protection layer (152) can prevent an electrical short between the low-resistance layer of the third extended organic light-emitting layer (142ba) of the third connection pattern (140ba) and the bridge electrode (190). The low-resistance layer can include a charge generation layer (CGL), a hole injection layer, etc. made of a low-resistance organic light-emitting material. The third extended organic light-emitting layer (142ba) can be formed by extending the third organic light-emitting layer (142b) of the third organic light-emitting element (140b) from the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting areas (NEA-1, NEA-2). When the third extended organic light-emitting layer (142ba) is connected to the bridge electrode (190), a color spot defect may occur due to leakage current that is connected to at least one organic light-emitting stack provided on the hole injection layer or charge generation layer in the third organic light-emitting element (140b) due to an electrical short between the third extended organic light-emitting layer (142ba), i.e., the third organic light-emitting layer (142b), and the bridge electrode (190).

[0170] The side surface of the third extended organic light-emitting layer (142ba) may be exposed together with the side surface of the third extended cathode electrode (143ba) and the side surface of the third subpixel protective layer (151b) by being patterned using previous photolithography and etching. However, according to an embodiment, the pixel protective layer (152) may be disposed on the exposed side surface of the third extended organic light-emitting layer (142ba). Accordingly, even if the bridge electrode (190) is subsequently patterned and formed using photolithography and etching, an electrical short between the second connection pattern (140ga) and the bridge electrode (190) does not occur due to the pixel protective layer (152), and thus a dark spot defect can be prevented.

[0171] The pixel protection layer (152) may include an insulating organic material, an inorganic material, or an insulating oxide film. The organic material may include polyimide, etc., the inorganic material may include SiO2, SiON, SiNx, etc., and the insulating oxide film may include Al2O3, etc.

[0172] One end of the pixel protection layer (152) is positioned on the upper surface of the bank (120) via the side of the third connection pattern (140ba), so that an electrical short between the low resistance layer of the third extended organic light-emitting layer (142ba) and the bridge electrode (190) can be more completely blocked.

[0173] Fig. 6 is a cross-sectional view illustrating an organic light emitting display device according to a sixth embodiment. Fig. 6 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along the line A-A' of each of Figs. 1, 2a, and 2b. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0174] The sixth embodiment is the same as the fifth embodiment (Fig. 5) except that the pixel protection layer (152) is formed of a transparent resin. Although not illustrated, in the step of forming and patterning an inorganic insulating film as in the sixth embodiment of Fig. 6, a photosensitive pattern made of a transparent resin may be developed and dry etched. In this case, the pixel protection layer (152) may have a multilayer structure including a transparent resin and an inorganic film or multiple inorganic films under the transparent resin. In particular, this structure can prevent organic components remaining during the resin curing process from penetrating into the third organic light-emitting layer (142b) on the side and reducing the lifespan of the third organic light-emitting element (140b).

[0175] In the sixth embodiment, components having the same shape, structure and / or function as those in the fifth embodiment (Fig. 5) are given the same drawing reference numerals and detailed descriptions are omitted.

[0176] As shown in FIG. 6, the pixel protection layer (152) may include a third cathode protection layer (145b), a third subpixel protection layer (151b), and a pixel protection layer (152).

[0177] The pixel protection layer (152) may be disposed on the side of the third connection pattern (140ba) as well as on the upper side of the third subpixel protection layer (151b). For example, the pixel protection layer (152) may be disposed on the side of the third extended organic light-emitting layer (142ba) of the third connection pattern (140ba).

[0178] The pixel protection layer (152) may be a planarization layer. That is, the upper surface of the pixel protection layer (152) has a flat surface, and when the side of the third connection pattern (140ba) has an undercut, the resin pixel protection layer (152) forms a gentle slope, so that the bridge electrode (190) formed by the subsequent process can be formed stably without being broken.

[0179] For this purpose, the pixel protection layer (152) may be formed of a transparent resin. Since the pixel protection layer (152) is formed of a transparent resin, not only does the upper surface of the pixel protection layer (152) have a flat surface, but also the third color light generated from the third organic light-emitting layer (142b) underneath can be stably emitted to the outside.

[0180] FIG. 7 is a plan view illustrating an organic light-emitting display device according to the seventh embodiment.

[0181] The seventh embodiment is identical to the first embodiment (Fig. 1) except that the bridge electrode (190) is formed as a flat plate to include a plurality of pixels.

[0182] That is, the bridge electrode (190) may be arranged not only in the light-emitting areas (EAr, EAg, EAb) of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) of each of the plurality of pixels, but also in the non-light-emitting areas (NEA-1, NEA-2). In this case, in the top emission method, the bridge electrode (190) may be made of a conductive material with excellent light transmittance so that the color light of each of the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) passes through the bridge electrode (190) and is emitted to the outside.

[0183] Fig. 8 is a cross-sectional view illustrating an organic light-emitting display device according to an eighth embodiment. Fig. 8 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along line A-A' of Fig. 7. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0184] The eighth embodiment may be identical to the fifth embodiment (Fig. 5) except that the bridge electrode (190) is positioned not only in the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) but also in the non-light-emitting areas (NEA-1, NEA-2). In the eighth embodiment, components having the same shape, structure, and / or function as those in the fifth embodiment (Fig. 5) are given the same drawing reference numerals and detailed descriptions are omitted.

[0185] As illustrated in FIG. 8, the third organic light-emitting element (140b) may be placed in the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb), and the third connection pattern (140ba) may be placed in the non-light-emitting area (NEA-1, NEA-2) of the third subpixel (SPb).

[0186] The third connection pattern (140ba) may be arranged to extend from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2) on the bank (120).

[0187] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), and a pixel protection layer (152).

[0188] The pixel protection layer (152) may include a third cathode protection layer (145b), a third subpixel protection layer (151b), and a pixel protection layer (152). The pixel protection layer (152) may be disposed not only in the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) but also in the non-light-emitting areas (NEA-1, NEA-2). The pixel protection layer (152) may be disposed not only on the upper side of the third subpixel protection layer (151b) but also on the side of the third connection pattern (140ba), so that a short circuit between the low resistance layer included in the third organic light-emitting layer (142b) of the third organic light-emitting element (140b) and the bridge electrode (190) may be prevented.

[0189] The bridge electrode (190) may be disposed on the pixel protection layer (152). The bridge electrode (190) may be disposed in at least a display area of ​​the substrate (100). As illustrated in FIG. 7, the display area may include a plurality of pixels, each of which includes a first subpixel (SPr), a second subpixel (SPg), and a third subpixel (SPb).

[0190] As illustrated in FIG. 8, the bridge electrode (190) may be disposed in the non-emission areas (NEA-1, NEA-2) as well as the light-emitting areas (EAr, EAg, EAb) of the third sub-pixel (SPb). The bridge electrode (190) may be connected to the power wiring (111, 112) from the light-emitting areas (EAr, EAg, EAb) of the third sub-pixel (SPb) via the non-emission areas (NEA-1, NEA-2). At this time, a part of the bridge electrode (190) may be electrically connected to the third extended cathode electrode (143ba) of the third connection pattern (140ba) through the third cathode contact hole (188) of the third cathode connection structure (183).

[0191] As illustrated in FIG. 7, the bridge electrode (190) is arranged in a flat manner in the display area, and multiple areas of the bridge electrode (190) can be electrically connected to at least one first subpixel (SPr), a second subpixel (SPg), and a third subpixel (SPb) of one or more pixels.

[0192] According to an embodiment, since the bridge electrode (190) is formed as a flat plate, photolithography and etching are not required to form a separate pattern, thereby reducing the process time and process cost. Transparent conductive films such as IZO and ITO are deposited only in the display area during film formation using a sputtering device. A metal mask opened in cell units is welded to a tray to cover the substrate during film formation. This mask is called a cell mask.

[0193] Meanwhile, since the bridge electrode (190) is positioned on the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb), it may be made of a conductive material with excellent light transmittance. The conductive material may include, for example, ITO, IZO, etc. Accordingly, the third color light generated in the third subpixel (SPb) may pass through the bridge electrode (190) and be emitted to the outside.

[0194] Fig. 9 is a cross-sectional view illustrating an organic light-emitting display device according to a ninth embodiment. Fig. 9 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along line A-A' of Fig. 7. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0195] The ninth embodiment may be identical to the sixth embodiment (Fig. 6) except that the bridge electrode (190) is positioned not only in the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) but also in the non-light-emitting areas (NEA-1, NEA-2). In the ninth embodiment, components having the same shape, structure, and / or function as those in the sixth embodiment (Fig. 6) are given the same drawing reference numerals and detailed descriptions are omitted.

[0196] As illustrated in FIG. 9, the third organic light-emitting element (140b) may be placed in the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb), and the third connection pattern (140ba) may be placed in the non-light-emitting area (NEA-1, NEA-2) of the third subpixel (SPb).

[0197] The third connection pattern (140ba) may be arranged to extend from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2) on the bank (120).

[0198] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), and a pixel protection layer (152).

[0199] The pixel protection layer (152) may include a third cathode protection layer (145b), a third subpixel protection layer (151b), and a pixel protection layer (152). The pixel protection layer (152) may be disposed not only in the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) but also in the non-light-emitting areas (NEA-1, NEA-2). The pixel protection layer (152) may be disposed not only on the upper side of the third subpixel protection layer (151b) but also on the side of the third connection pattern (140ba), so that a short circuit between the low resistance layer included in the third organic light-emitting layer (142b) of the third organic light-emitting element (140b) and the bridge electrode (190) may be prevented.

[0200] In addition, the pixel protection layer (152) may be formed of a transparent resin. As described above in the sixth embodiment, the pixel protection layer (152) made of a transparent resin may be provided with a double-layer structure or a multi-layer structure including an inorganic film. Since the pixel protection layer (152) is formed of a transparent resin, not only does the upper surface of the pixel protection layer (152) have a flat surface, but also the third color light generated from the third organic light-emitting layer (142b) underneath can be stably emitted to the outside.

[0201] Meanwhile, the bridge electrode (190) may be placed on the pixel protection layer (152). The arrangement structure of the bridge electrode (190) is the same as the arrangement structure of the bridge electrode (190) illustrated in FIG. 8, and therefore, a detailed description is omitted.

[0202] According to the embodiment, since the bridge electrode (190) is formed as a flat plate, photo and etching are not required to form a separate pattern, so the process time and process cost can be shortened.

[0203] Fig. 10 is a plan view illustrating an organic light emitting display device according to the 10th embodiment.

[0204] The tenth embodiment is identical to the first embodiment (Fig. 1) except that the protective films (151b, 152) of the light-emitting portion (EA) are removed by using the bridge electrode (190) and the bridge electrode (190) is in the form of intersecting bars. In the fourth embodiment, components having the same shape, structure and / or function as those of the first embodiment (Fig. 1) are given the same drawing reference numerals and detailed descriptions are omitted.

[0205] As illustrated in Fig. 10, a plurality of first bridge electrodes (191) and a plurality of second bridge electrodes (192) can be arranged in a bar shape so as to be electrically connected to each other by crossing each other.

[0206] A plurality of first bridge electrodes (191) may be arranged lengthwise along the first direction, and a plurality of second bridge electrodes (192) may be arranged lengthwise along the second direction.

[0207] A power connection structure (170) may be arranged at the intersection of the first bridge electrode (191) and the second bridge electrode (192). The first cathode connection structure (181), the second cathode connection structure (182), and the third cathode connection structure (183) may be arranged to vertically overlap with the first bridge structure arranged in the first direction.

[0208] The first bridge electrode (191) may be arranged across the first cathode connection structure (181), the second cathode connection structure (182), and the third cathode connection along the first direction. The second bridge electrode (192) may be connected to the first bridge electrode (191) and may be arranged lengthwise along the second direction.

[0209] The power wiring (111, 112) can be electrically connected to the first bridge electrode (191) (or the second bridge electrode (192)) through the power contact hole (171) of the power connection structure (170). The first bridge electrode (191) can be commonly connected to the first cathode contact hole (186) of the first cathode connection structure (181), the second cathode contact hole (187) of the second cathode connection structure (182), and the third cathode contact hole (188) of the third cathode connection structure (183). Accordingly, the low voltage supplied to the power wiring (111, 112) can be electrically connected to the first connection pattern (140ra) through the first bridge electrode (191) and the first cathode contact hole (186) of the first cathode connection structure (181).

[0210] The low voltage supplied to the power wires (111, 112) can be electrically connected to the second connection pattern (140ga) through the first bridge electrode (191) and the second cathode contact hole (187) of the second cathode connection structure (182). The low voltage supplied to the power wires (111, 112) can be electrically connected to the third connection pattern (140ba) through the first bridge electrode (191) and the third cathode contact hole (188) of the third cathode connection structure (183). Consequently, the low voltage supplied to the power wires (111, 112) can be commonly connected to the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) through the first bridge electrode (191).

[0211] Fig. 11 is a plan view illustrating an organic light emitting display device according to an 11th embodiment.

[0212] The eleventh embodiment is the same as the second embodiment (Figs. 2a and 2b) except that the bridge electrode (190) is arranged in the non-emitting area (NEA-1, NEA-2) of the first subpixel (SPr) to the third subpixel (SPb) in a structure in which the dot shape and the stripe shape are mixed.

[0213] As illustrated in FIG. 11, each of the plurality of pixels may include a first subpixel (SPr), a second subpixel (SPg), and a third subpixel (SPb).

[0214] The first subpixel (SPr) to the third subpixel (SPb) may have a structure in which a dot shape and a stripe shape are mixed. The first subpixel (SPr) to the third subpixel (SPb) may each include an emitting area (EAr, EAg, EAb) and a non-emitting area (NEA-1, NEA-2). The first subpixel (SPr) and the second subpixel (SPg) may each be arranged in a dot shape. A plurality of third subpixels (SPb) may have a stripe pattern (or stripe shape) having the same color and arranged long along the second direction (Y).

[0215] In an embodiment, the bridge electrode (190) may be disposed in the non-emission areas (NEA-1, NEA-2) of the first to third sub-pixels (SPr) to (SPb). The bridge electrode (190) may be disposed in the non-emission areas (NEA-1, NEA-2) surrounding the emission areas (EAr, EAg, EAb) of the first sub-pixel (SPr). The bridge electrode (190) may be disposed in the non-emission areas (NEA-1, NEA-2) surrounding the emission areas (EAr, EAg, EAb) of the second sub-pixel (SPg). The bridge electrode (190) may be disposed in the non-emission areas (NEA-1, NEA-2) located on both sides of the emission areas (EAr, EAg, EAb) of the third sub-pixel (SPb).

[0216] The power connection structure (170), the first cathode connection structure (181), the second cathode connection structure (182), and the third cathode connection structure (183) are identical to the corresponding structures illustrated in FIGS. 2A and 2B, and therefore, a detailed description thereof is omitted.

[0217] 12 is a cross-sectional view illustrating an organic light-emitting display device according to a twelfth embodiment. FIG. 12 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along the line A-A' of FIGS. 10 and 11, respectively. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0218] The 12th embodiment may be identical to the 6th embodiment (Fig. 6) except that the third cathode protection layer (145b) and the third subpixel protection layer (151b) are disposed only in the non-emitting areas (NEA-1, NEA-2) of the third subpixel (SPb). In the 12th embodiment, components having the same shape, structure, and / or function as those in the 6th embodiment (Fig. 6) are given the same drawing reference numerals and detailed descriptions are omitted.

[0219] Referring to FIG. 12, an organic light-emitting display device according to the 12th embodiment may include a bank (120), a third organic light-emitting element (140b), a third connection pattern (140ba), a power connection structure (170), a third cathode connection structure (183), a bridge electrode (190), etc.

[0220] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), a third subpixel protective layer (151b), and a pixel protective layer (152). Although not shown, a third cathode protective layer (145b) may be disposed between the third extended cathode electrode (143ba) and the third subpixel protective layer (151b).

[0221] The third extended organic light-emitting layer (142ba) may be formed by extending the third organic light-emitting layer (142b) of the third organic light-emitting element (140b) from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2). The third extended cathode electrode (143ba) may be formed by extending the third cathode electrode (143b) of the third organic light-emitting element (140b) from the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting area (NEA-1, NEA-2).

[0222] In an embodiment, the third subpixel protection layer (151b) and the pixel protection layer (152) may be disposed only in the non-emitting areas (NEA-1, NEA-2) of the third subpixel (SPb). The third subpixel protection layer (151b) and the pixel protection layer (152) may each vertically overlap with the bank (120). The third subpixel protection layer (151b) and the pixel protection layer (152) may not vertically overlap with the third anode electrode (141b) of the third organic light-emitting element (140b). The third subpixel protection layer (151b) and the pixel protection layer (152) may be formed by patterning using photolithography and etching.

[0223] The pixel protection layer (152) is disposed at least on the upper surface of the third extended cathode electrode (143ba), thereby preventing an electrical short between the bridge electrode (190) and the third extended cathode electrode (143ba).

[0224] In addition, the pixel protection layer (152) may be made of transparent resin, but is not limited thereto.

[0225] The bridge electrode (190) may be disposed on the pixel protection layer (152). The bridge electrode (190) may be connected to the power wiring (111, 112) through the power connection structure (170) and may be electrically connected to the third extended cathode electrode (143ba) of the third connection pattern (140ba) through the third cathode connection structure (183).

[0226] A protective layer may be disposed in the light-emitting areas (EAr, EAg, EAb) and non-light-emitting areas (NEA-1, NEA-2) of the third subpixel (SPb). The protective layer may be in contact with the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) in the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb).

[0227] Meanwhile, as illustrated in FIG. 12, when the third subpixel protection layer (151b) and the pixel protection layer (152) are patterned and formed, the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) may be exposed. Thereafter, when exposed to the air for a post-process, the exposed third cathode electrode (143b) and the third extended cathode electrode (143ba) may be oxidized, thereby losing their function as electrodes, and thus causing dark spot defects such as poor lighting.

[0228] A structure for solving the above-mentioned problem is described in detail with reference to Fig. 13.

[0229] Fig. 13 is a cross-sectional view illustrating a third subpixel of an organic light-emitting display device according to a 13th embodiment. Fig. 13 illustrates a connection structure between a third subpixel (SPb) and power wiring (111, 112) along the line A-A' of each of Figs. 10 and 11. Although not illustrated, the connection structure between the first subpixel (SPr) and the power wiring (111, 112) and the connection structure between the second subpixel (SPg) and the power wiring (111, 112) may be identical to the connection structure between the third subpixel (SPb) and the power wiring (111, 112).

[0230] The 13th embodiment is similar to the 12th embodiment (Fig. 12) except that the third cathode protection layer (145b) is disposed on the bridge electrode (190) as well as the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb). In the 13th embodiment, components having the same shape, structure, and / or function as those in the 12th embodiment (Fig. 12) are given the same drawing reference numerals and detailed descriptions are omitted.

[0231] As illustrated in FIG. 13, the third connection pattern (140ba) may include a third subpixel protection layer (151b), a pixel protection layer (152), and a cathode protection layer (155).

[0232] The third subpixel protection layer (151b) and the pixel protection layer (152) can be formed only in the non-light-emitting areas (NEA-1, NEA-2) of the third subpixel (SPb). That is, the third subpixel protection layer (151b) and the pixel protection layer (152) can be formed by patterning using photolithography and etching. Accordingly, the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) can be exposed.

[0233] The cathode protection layer (155) can be placed in the non-emission areas (NEA-1, NEA-2) as well as the emission areas (EAr, EAg, EAb) of the third subpixel (SPb).

[0234] The cathode protection layer (155) may be disposed on the third cathode electrode (143b) of the third organic light-emitting element (140b) in the light-emitting area (EAr, EAg, EAb) of the third subpixel (SPb), and may be disposed on the third extended cathode electrode (143ba) of the third connection pattern (140ba) in the non-light-emitting area (NEA-1, NEA-2) of the third subpixel (SPb). Accordingly, the third cathode protection layer (145b) is disposed on the upper surface of the exposed third cathode electrode (143b) and the upper surface of the third extended cathode electrode (143ba), thereby preventing damage to the cathode due to static electricity in the PECVD device during the film formation process of the protective film (171), which is the next process. In addition, the cathode protection layer (155) improves the light emission efficiency by reflecting the third color light generated from the third organic light-emitting layer (142b) back at the interface between the cathode electrode (141b) and the high refractive index cathode protection layer (145) as an auxiliary role of constructive interference between the third anode electrode (141b) and the third cathode electrode (143b), and an optimal refractive index can be set so that more third color light can be extracted to the outside by adding a low refractive index cathode protection layer to maximize light extraction. In this case, the cathode protection layer (155) can be called a light extraction layer or an optical compensation layer.

[0235] Meanwhile, a cathode protection layer (155) may be disposed on the bridge electrode (190) in the non-emitting area (NEA-1, NEA-2) of the third subpixel (SPb). The bridge electrode (190) may be physically and / or environmentally protected by the cathode protection layer (155).

[0236] Fig. 14 is a cross-sectional view illustrating one pixel of an organic light-emitting display device according to the 14th embodiment. Fig. 14 illustrates a connection structure between the first subpixel (SPr) to the third subpixel (SPb) and the power wiring (111, 112) along the line B-B' of Fig. 10. The structure illustrated in Fig. 14 can be equally applied to Fig. 11.

[0237] In the first to seventh embodiments, the contents that may have been insufficient in terms of subpixels were expanded to the pixel area as shown in Fig. 14 (the seventh embodiment), thereby expanding the explanation to the pixel perspective. In addition, cross-sectional views (Figs. 17a to 17i) for each process step were explained by expanding Fig. 14 (the seventh embodiment) to the pixel area. The seventh embodiment is a structure that requires the most process steps, and thus the process for the first to sixth embodiments, which have a shortened process step count, can be explained together.

[0238] In the 13th embodiment (Fig. 13), it can be confirmed in the pixel (P) that the connection structure is expanded to include not only the connection structure between the third subpixel (SPb) and the power wire (111, 112), but also the connection structure between the first subpixel (SPr) and the power wire (111, 112) and the connection structure between the second subpixel (SPg) and the power wire (111, 112).

[0239] Referring to FIGS. 10 and 14, the organic light-emitting display device according to the 14th embodiment may include a bank (120), a first organic light-emitting element (140r) to a third organic light-emitting element (140b), a first connection pattern (140ra) to a third connection pattern (140ba), a power connection structure (170), a first cathode connection structure (181) to a third cathode connection structure (183), a bridge electrode (190), a cathode protection layer (155), an encapsulation layer (160), etc.

[0240] A first organic light-emitting element (140r) may be placed in a first subpixel (SPr), a second organic light-emitting element (140g) may be placed in a second subpixel (SPg), and a third organic light-emitting element (140b) may be placed in a third subpixel (SPb).

[0241] The first organic light-emitting element (140r) to the third organic light-emitting element (140b) may each include an anode electrode, an organic light-emitting layer, and a cathode electrode.

[0242] The first connection pattern (140ra), the second connection pattern (140ga), and the third connection pattern (140ba) may be arranged to extend from the light-emitting region (EAr, EAg, EAb) to the non-light-emitting region (NEA-1, NEA-2), respectively.

[0243] The first connection pattern (140ra) may include a first extended organic light-emitting layer (142ra), a first extended cathode electrode (143ra), a first subpixel protection layer (151r), and a pixel protection layer (152). The first extended organic light-emitting layer (142ra) may be formed by extending the first organic light-emitting layer (142r) of the first organic light-emitting element (140r) from the light-emitting area (EAr, EAg, EAb) of the first subpixel (SPr) to the non-light-emitting area (NEA-1, NEA-2). The first extended cathode electrode (143ra) may be formed by extending the first cathode electrode (143r) of the first organic light-emitting element (140r) from the light-emitting area (EAr, EAg, EAb) of the first subpixel (SPr) to the non-light-emitting area (NEA-1, NEA-2).

[0244] The second connection pattern (140ga) may include a second extended organic light-emitting layer (142ga), a second extended cathode electrode (143ga), a second subpixel protection layer (151g), and a pixel protection layer (152). The second extended organic light-emitting layer (142ga) may be formed by extending the second organic light-emitting layer (142g) of the second organic light-emitting element (140g) from the light-emitting areas (EAr, EAg, EAb) of the second subpixel (SPg) to the non-light-emitting areas (NEA-1, NEA-2). The second extended cathode electrode (143ga) may be formed by extending the second cathode electrode (143g) of the second organic light-emitting element (140g) from the light-emitting areas (EAr, EAg, EAb) of the second subpixel (SPg) to the non-light-emitting areas (NEA-1, NEA-2).

[0245] The third connection pattern (140ba) may include a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), a third subpixel protection layer (151b), and a pixel protection layer (152). The third extended organic light-emitting layer (142ba) may be formed by extending the second organic light-emitting layer (142g) of the third organic light-emitting element (140b) from the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting areas (NEA-1, NEA-2). The third extended cathode electrode (143ba) may be formed by extending the third cathode electrode (143b) of the third organic light-emitting element (140b) from the light-emitting areas (EAr, EAg, EAb) of the third subpixel (SPb) to the non-light-emitting areas (NEA-1, NEA-2).

[0246] The first subpixel protection layer (151r) and the pixel protection layer (152) may be disposed in the non-emission area (NEA-1, NEA-2) of the first subpixel (SPr), the second subpixel protection layer (151g) and the pixel protection layer (152) may be disposed in the non-emission area (NEA-1, NEA-2) of the second subpixel (SPg), and the third subpixel protection layer (151b) and the pixel protection layer (152) may be disposed in the non-emission area (NEA-1, NEA-2) of the third subpixel (SPb).

[0247] The first subpixel protection layer (151r) to the third subpixel protection layer (151b) may be individually arranged on the first subpixel (SPr) to the third subpixel (SPb). The pixel protection layers (152) of each of the first subpixel (SPr) to the third subpixel (SPb) may be continuously connected to each other in the non-emitting areas (NEA-1, NEA-2) of adjacent subpixels, but this is not limited thereto.

[0248] The pixel protection layer (152) may be disposed on at least a side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra), at least a side surface of the second extended cathode electrode (143ga) of the second connection pattern (140ga), and at least a side surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba). The pixel protection layer (152) may be disposed on at least a side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) and at least a side surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) in the power contact hole (171) of the power connection structure (170).

[0249] The first subpixel protective layer (151r) to the third subpixel protective layer (151b) can physically, electrically and / or optically protect the first cathode electrode (143r) to the third cathode electrode (143b), the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba), the first organic light-emitting layer (142r) to the third organic light-emitting layer (142b) and / or the first extended organic light-emitting layer (142ra) to the third extended organic light-emitting layer (142ba).

[0250] For example, the first subpixel protection layer (151r) to the third subpixel protection layer (151b) can prevent the first cathode electrode (143r) to the third cathode electrode (143b) and the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) from being oxidized when the substrate (100) is moved and exposed to the atmosphere for a subsequent process. For example, the first subpixel protection layer (152r) to the third subpixel protection layer (151b) can prevent each organic light-emitting element (140r, 140b, 140g) from becoming a dark spot due to the penetration of a developer during a photolithography process.

[0251] For example, the first subpixel protective layer (151r) to the third subpixel protective layer (151b) can further amplify the light generated in the organic light-emitting layer (142r, 140g, 140b) by constructively interfering between the respective anode electrodes (141r, 141g, 141b) and the respective cathode electrodes (143r, 143g, 143b) by reflecting the amplified light again, or can allow the color light to be well extracted to the outside. For example, the first subpixel protective layer (151r) to the third subpixel protective layer (151b) can have an optimal refractive index set to maximize light extraction by considering the refractive index of the first organic light-emitting layer (142r) to the third organic light-emitting layer (142b) and the refractive index of the atmosphere, respectively. Therefore, a multilayer film for each function can be provided to satisfy these functions. For example, it may be an inorganic capping layer on top of an organic capping layer, a silicon oxide film formed by ALD on top of the inorganic capping layer, or a silicon nitride film formed by PECVD on top of the silicon oxide film. Accordingly, the subpixel protective layer (151) has the functions of a light extraction layer, an optical compensation layer, and an encapsulation function.

[0252] The cathode protection layer (155) can be placed in the non-emission areas (NEA-1, NEA-2) as well as the emission areas (EAr, EAg, EAb) of the first subpixel (SPr) to the third subpixel (SPb).

[0253] The cathode protection layer (155) may be disposed on each cathode electrode (143r, 143g, 143b) of each organic light-emitting element (140r, 140b, 140g) in each light-emitting area (EA) of each subpixel (SPr, SPg, SPb), and may be disposed on each extended cathode electrode (143ra, 143ga, 143ba) of each connection pattern (140ra, 140ga, 140ba) in the non-light-emitting area (NEA-1, NEA-2) of each subpixel (SPr, SPg, SPb). In addition, the cathode protection layer (155) may be disposed on the bridge electrode (190) in the non-light-emitting area (NEA-1, NEA-2) of the subpixels (SPr, SPg, SPb).

[0254] Accordingly, the light extraction efficiency can be improved by the cathode protection layer (155), and the static electricity-induced dark spot defect that may occur during the encapsulation film (160) deposition by PECVD, which is the next process, can be prevented.

[0255] Additionally, a reverse voltage can be applied to the organic light-emitting element (140) in an atmosphere containing a small amount of oxygen or moisture while maintaining a vacuum with the cathode electrode exposed.

[0256] In a subpixel where the organic light-emitting element (140) is in a dark spot state due to an electrical leak or short circuit, the cathode metal is partially oxidized or removed by overcurrent.

[0257] Through this process, dark subpixels are repaired back to normal subpixels. This drastic reduction in the number of dark spots per panel (from 100 to 3), a key specification for quality panels, can improve yield.

[0258] Meanwhile, the cathode electrodes (143r, 143g, 143b) are made of silver (Ag), zinc (Zn), aluminum (Al), and indium (In) or alloys thereof, and the electron injection layer of the organic light-emitting layer may include a material including at least one selected from among ytterbium (Yb), yttrium (Y), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), calcium (Ca), strontium (Sr), barium (Ba), radium (Ra), scandium (Sc), lanthanum (La), cerium (Ce), ruthenium (Ru), and samarium (Sm) having a work function of 4.0 eV or less.

[0259] In the process of dry etching the pixel protective film (152) and subpixel protective film (151r, 151g, 151b) formed on the upper portion of the cathode electrode (143r, 143g, 143b) of the light-emitting area (EAr, EAg, EAb), the cathode electrode (143r, 143g, 143b) is easily removed by a gas plasma such as CF4, thereby minimizing the contact resistance with the bridge electrode (190, 191, 192).

[0260] The first cathode connection structure (181) to the third cathode connection structure (183) may each include a first cathode contact hole (186) to a third cathode contact hole (188).

[0261] The bridge electrode (190) may be disposed on the pixel protection layer (152) in the non-emission area (NEA-1, NEA-2) of the first subpixel (SPr), the pixel protection layer (152) in the non-emission area (NEA-1, NEA-2) of the second subpixel (SPg), and the pixel protection layer (152) in the non-emission area (NEA-1, NEA-2) of the third subpixel (SPb).

[0262] The bridge electrode (190) can be electrically connected to the power wiring (111, 112) through the power contact hole (171) of the power connection structure (170).

[0263] The bridge electrode (190) can be electrically connected to the first extended cathode electrode (143ra) of the first connection pattern (140ra) through the first cathode contact hole (186) of the first cathode connection structure (181) in the non-emitting area (NEA-1, NEA-2) of the first subpixel (SPr). The bridge electrode (190) can be electrically connected to the second extended cathode electrode (143ga) of the second connection pattern (140ga) through the second cathode contact hole (187) of the second cathode connection structure (182) in the non-emitting area (NEA-1, NEA-2) of the second subpixel (SPg). The bridge electrode (190) can be electrically connected to the third extended cathode electrode (143ba) of the third connection pattern (140ba) through the third cathode contact hole (188) of the third cathode connection structure (183) in the non-emitting area (NEA-1, NEA-2) of the third subpixel (SPb).

[0264] According to an embodiment, before the photo and etching processes are performed, a first subpixel protection layer (151r) to a third subpixel protection layer (151b) may be disposed on the first cathode electrode (143r) to the third cathode electrode (143b) so that the first cathode electrode (143r) to the third cathode electrode (143b) are not exposed. Before the photo and etching processes are performed, a pixel protection layer (152) may be disposed on the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) of the first connecting pattern (140ra) to the third connecting pattern (140ba) so that the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) are not exposed. Accordingly, the first cathode to the third cathode electrodes (143b) can be physically, electrically and / or optically protected by the first subpixel protective layer (151r) to the third subpixel protective layer (151b). In addition, an electrical short between the first organic light-emitting element (140r) to the third organic light-emitting element (140b) and the bridge electrode (190) can be prevented by the pixel protective layer (152).

[0265]

[0266] [Manufacturing method and manufacturing system]

[0267] Fig. 15 illustrates a procedure of a manufacturing process of an organic light-emitting display device according to an embodiment. Fig. 16 illustrates a manufacturing system of an organic light-emitting display device according to an embodiment. Figs. 17a to 17q are cross-sectional views illustrating a manufacturing process of an organic light-emitting display device. Figs. 17a to 17q may be cross-sectional views taken along the line B-B' illustrated in Figs. 10 and 11, and may be cross-sectional views taken along the line B-B' illustrated in Figs. 1 and 2 if some processes are omitted.

[0268] Step a: TFT formation

[0269] A plurality of thin film transistors (TFTs) may be formed on a substrate (100) (step a). A first subpixel (SPr), a second subpixel (SPg), and a third subpixel (SPb) constituting a pixel may be defined on the substrate (100). A first driving circuit, a second driving circuit, and a third driving circuit may be configured to drive the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb) using a plurality of thin film transistors. An interlayer insulating layer may be formed on the first driving circuit, the second driving circuit, and the third driving circuit.

[0270] Step b: Anode formation (Fig. 17a)

[0271] As shown in Fig. 17a, the first anode electrode (141r) to the third anode electrode (141b) and the power wiring (111, 112) can be formed on the interlayer insulating layer (step b).

[0272] The first anode electrode (141r) to the third anode electrode (141b) and / or the power wiring (111, 112) may include a metal, a conductive oxide, a metal alloy, etc. The first anode electrode (141r) to the third anode electrode (141b) and / or the power wiring (111, 112) may include a single layer or different multilayer conductive films of a plurality of metals, metal alloys, and conductive oxides.

[0273] The first anode electrode (141r) to the third anode electrode (141b) may be formed separately from each other in the first subpixel (SPr) to the third subpixel (SPb). The power wiring (111, 112) may be formed together with the first anode electrode (141r) to the third anode electrode (141b), but this is not limited thereto.

[0274] Step c: Bank formation (Figure 17b)

[0275] As shown in Fig. 17b, a bank (120) can be formed on the interlayer insulating layer of the substrate (100) (step c).

[0276] The bank (120) surrounds the first anode electrode (141r) to the third anode electrode (141b), and prevents an electrical short between the first anode electrode (141r) to the third anode electrode (141b) and the first cathode electrode (143r) to the third cathode electrode (143b) to be formed later due to the step difference between the first anode electrode (141r) to the third anode electrode (141b), and can prevent a disconnection between the first cathode electrode (143r) to the third cathode electrode (143b).

[0277] The bank (120) may include organic materials, inorganic materials, metal oxides, etc. The organic material forming the bank (120) may include, for example, a polyimide-based polymer or an acrylic-based polymer. The inorganic material forming the bank (120) may include, for example, SiO2, SiNx, SiON, Al2O3, etc. The bank (120) may be formed as a single layer, an inorganic multilayer, or a mixed organic and inorganic multilayer.

[0278] Step d: Formation of bank protection layer (Fig. 17b)

[0279] When the bank (120) is made of an organic material, the upper edge of the bank (120) may be damaged during the etching and ashing process in the multi-layer patterning step (step g, step j, and step m) or the contact hole patterning step (step p), and when the upper edge of the bank (120) is damaged, a bank protection layer (130) may be formed on the bank (120).

[0280] The bank protection layer (130) may be formed of an inorganic material or an insulating oxide film. The bank protection layer (130) may be formed of a multilayer inorganic material to ensure a certain thickness. The inorganic material forming the bank protection layer (130) may include SiO2, SiNx, SiON, Al2O3, etc.

[0281] Step e: Red multilayer deposition (Fig. 17c)

[0282] As shown in Fig. 17c, a red multilayer can be formed on a substrate (100) (step e).

[0283] The red multilayer may refer to a plurality of layers constituting the first organic light-emitting element (140r) and the first connection pattern (140ra) illustrated in FIG. 14. For example, a red organic light-emitting film (142'), a red cathode film (143'), and an insulating film (151-1) may be sequentially deposited on a substrate (100) to form a red multilayer. The multilayer can be effectively deposited by depositing 10 or more organic light-emitting layers, cathode layers, and cathode protective layers in an inline deposition device configured with a plurality of chambers. The insulating film (151-1) may have a multilayer structure of an inorganic film including an ALD film deposition method so that the multilayer is not damaged by the penetration of a developer in the next process, which is a photo process, due to pinholes generated by foreign substances on the surface during the film deposition process, thereby preventing the occurrence of dark spots.

[0284] Additionally, to prevent deformation of the organic light-emitting layer, an inorganic film can be formed at a temperature below 100°C. Therefore, even in a multi-layered inorganic film, an organic film can be added as an intermediate film to prevent damage, such as penetration of a developer, in a subsequent process.

[0285] Step f: Red multilayer photo (Fig. 17d)

[0286] The photo process (step f) is performed on the above-described red multilayer. Since the subpixel protective layer (151-1) is formed on the entire surface of the substrate using multiple organic and inorganic films in a multi-layer structure, the cathode layer and organic light-emitting layer included in the red multilayer can undergo the photo process without damage for a certain period of time at atmospheric pressure. However, since the photo process is performed at atmospheric pressure, no matter how well the multilayer is manufactured, it is performed immediately to minimize environmental impact and then moves on to the next process, the patterning process.

[0287] As shown in Fig. 17d, a red multilayer photo process is first performed so that a first photosensitive pattern (210) can be formed on the red multilayer (step f).

[0288] Step g: Red multilayer patterning (Fig. 17e)

[0289] The term "patterning" generally refers to a series of processes that include photolithography (exposure and development), followed by etching and photoresist stripping. However, it should be noted that in the present invention, dry etching and ashing performed in vacuum equipment are collectively referred to as "patterning," excluding photolithography.

[0290] The subpixel protection layer (151-1) is etched using CF4 base gas by dry etching, and then the red cathode film (143r') is etched using Cl2 or After being etched with HCl base gas, the organic light-emitting film (142r') is continuously dry-etched with CF4 gas base, and then PR can be removed by ashing with O2. In addition to the base gas, the added gas may be an inert gas such as Ar or He, and depending on the film, O2 or H2, etc. may be added, but is not limited thereto.

[0291] In step g, the first organic light-emitting layer (142r) and the first cathode electrode (143r) of the first organic light-emitting element (140r) and the first extended organic light-emitting layer (142ra), the first extended cathode electrode (143ra) and the first subpixel protective layer (151r) of the first connection pattern (140ra) can be formed.

[0292] The first organic light-emitting layer (142r) and the first extended organic light-emitting layer (142ra) may be formed using a red organic light-emitting film (142'). The first cathode electrode (143r) and the first extended cathode electrode (143ra) may be formed using a red cathode film (143'). The first subpixel protection layer (151r) may be formed using an insulating film (151-1). The first subpixel protection layer (151r) may be formed on the first cathode electrode (143r) and / or the first extended cathode electrode (143ra).

[0293] Specifically, as illustrated in FIG. 17d, a red multilayer photo process may be performed first, so that a first photosensitive pattern (210) may be formed on the red multilayer (step f). Thereafter, the process may be moved to multiple vacuum chambers for dry etching and dry ashing, and steps g and h may be sequentially performed in a vacuum atmosphere throughout the entire process. That is, as illustrated in FIG. 17e, after the red multilayer is patterned in a vacuum atmosphere (step g), as illustrated in FIG. 17f, a green multilayer may be deposited in a vacuum atmosphere (step h).

[0294] The red multilayer may be patterned (step g), so that the first organic light-emitting layer (142r) and the first cathode electrode (143r) of the first organic light-emitting element (140r), the first extended organic light-emitting layer (142ra) of the first connection pattern (140ra), the first extended cathode electrode (143ra), and the first subpixel protective layer (151r) may be formed. In this case, the side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) may be exposed.

[0295] In step e, when the substrate (100) is moved to a photo equipment in an air atmosphere to perform step f while the insulating film (151-1) constituting the red multilayer is not formed, the upper surface of the first cathode electrode (143r) of the first organic light-emitting element (140r) and the upper surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) are exposed to the air atmosphere, so that the upper surface of the first cathode electrode (143r) of the first organic light-emitting element (140r) and the upper surface of the first extended cathode electrode (143ra) are oxidized, losing their function as electrodes and causing a dark spot defect.

[0296] However, in the embodiment, since the insulating film (151-1) constituting the red multilayer is formed on the upper surface of the red cathode film (143'), even if the substrate (100) is moved to a photo equipment in an atmospheric atmosphere to perform step f, the upper surface of the first cathode electrode (143r) of the first organic light-emitting element (140r) and the upper surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) are not exposed to the atmospheric atmosphere by the first subpixel protective film, so that a dark spot defect can be prevented.

[0297] Meanwhile, even if the insulating film (151-1) constituting the red multilayer is formed to prevent dark spot defects, at least the side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) may be exposed as a result of step g. If the substrate (100) is moved to a photo equipment in an air atmosphere to perform step i immediately without performing step h, the exposed side surface of the first extended cathode electrode (143ra) may be exposed to the air atmosphere, and the side surface of the first extended cathode electrode (143ra) may be oxidized.

[0298] However, in the embodiment, step h is performed continuously in a vacuum atmosphere after step g, so that the green multilayer is formed on the first organic light-emitting element (140r) and the first connection pattern (140ra), so that the side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) is not exposed by the green multilayer. Even if the substrate (100) is moved to a photo equipment and exposed to an air atmosphere to perform step i thereafter, the side surface of the first extended cathode electrode (143ra) may not be oxidized by oxygen or the like.

[0299] In summary, in the embodiment, when the red multilayer is formed, an insulating film (151-1) is formed on the uppermost layer to form a first subpixel protective layer (151r), thereby preventing oxidation of the first cathode electrode (143r) of the first organic light-emitting element (140r) and the first extended cathode electrode (143ra) of the first connection pattern (140ra). In addition, in the embodiment, after the green multilayer is formed in a state where the red multilayer is patterned and at least the side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra) is exposed (step g), the substrate (100) may be moved to a photo equipment in an air atmosphere to perform step i. In this case, since the green multilayer is formed on the entire surface of the substrate, the side surface of the first extended cathode electrode (143ra) is not exposed, and thus may not be oxidized by oxygen or the like. Furthermore, since both steps g and h are processes performed in a vacuum atmosphere, a system is required in which the process is continuously moved inline between vacuum chambers. This significantly reduces process time, thereby improving productivity, ensuring quality through foreign matter management, and reducing expensive material costs. Therefore, a "vacuum patterning and deposition in-line system" that can simultaneously satisfy yield, productivity, and material costs can be implemented.

[0300] Step h: Green multilayer film formation (Fig. 17f)

[0301] As mentioned above, after the R multilayer patterning (g step) is completed, it can be moved to a logistics method that maintains a vacuum atmosphere. If necessary, it can be moved to a vacuum deposition chamber through atmospheric pressure logistics where oxygen or moisture is controlled to 5 ppm or less. If it is not moved through the logistics method mentioned above, an oxidation reaction with oxygen or moisture may occur on the side of the etched red multilayer, which may deteriorate the function of the cathode layer (cathode electrode), electron injection layer, and charge generation layer (including Mg, Ag, LiF, Li, Yb, etc.). Or, over time, oxygen or moisture may diffuse and damage the organic light-emitting material, causing dark spots. Therefore, the implementation of vacuum logistics or its system is essential.

[0302] As shown in Fig. 17f, a green multilayer can be formed in a vacuum atmosphere (step h).

[0303] The green multilayer may refer to a plurality of layers constituting the second organic light-emitting element (140g) and the second connection pattern (140ga). For example, a green organic light-emitting film (142g'), a green cathode film (143g'), and an insulating film (151-2) may be sequentially formed on a substrate (100) to form a green multilayer.

[0304] The green multilayer film formation (step h) is the same process as the red multilayer film formation (step e) except that it applies the third organic light-emitting layer (142b) among the organic deposition materials and some layers optimized for the second organic light-emitting layer (142g), and the thickness is optimized for the green wavelength, so further description is omitted (Fig. 17f).

[0305] Step i: Green multilayer photo (Fig. 17g)

[0306] As shown in Fig. 17g, a green multilayer photo process is performed so that a second photosensitive pattern (220) can be formed on the green multilayer (step i).

[0307] The green multilayer photo (step i) is the same process as the red multilayer photo (step f), and further explanation is omitted.

[0308] Step j: Green multilayer patterning (Fig. 17h)

[0309] A dry etching process and a dry ashing process are performed on the above-described green multi-layer, so that a second organic light-emitting layer (142g) and a second cathode electrode (143g) of a second organic light-emitting element (140g) and a second extended organic light-emitting layer (142ga), a second extended cathode electrode (143ga) and a second subpixel protective layer (151g) of a second connection pattern (140ga) can be formed (step j).

[0310] Green multilayer patterning (step j) is the same process as red multilayer patterning (step g), so further explanation is omitted (Fig. 17h).

[0311] Step k: Blue multilayer deposition (Fig. 17i)

[0312] As described above, once step j is completed, the process can be performed continuously to step k while maintaining the vacuum. That is, as shown in FIG. 17h, after the green multilayer is patterned in a vacuum atmosphere (step j), the green multilayer can be deposited in a vacuum deposition line (step k), as shown in FIG. 17i.

[0313] The blue multilayer film formation (step k) is the same process as the red multilayer film formation (step e) except that it applies a blue light-emitting layer (B-EML) among the organic deposition materials and some layers optimized for the B-EML are applied, and the thickness is optimized for the blue wavelength, so further description is omitted (Fig. 17i).

[0314] Step l: Blue multilayer photo (Fig. 17j)

[0315] As shown in Fig. 17j, a photo process is performed so that a second photosensitive pattern (230) can be formed on the blue multilayer (step l).

[0316] The blue multilayer photo (step l) is the same process as the red multilayer photo (step f), and a detailed description is omitted (Fig. 17j).

[0317] Step m: Blue multilayer patterning (Fig. 17k)

[0318] A dry etching process and a dry ashing process are performed on the above-described blue multi-layer, so that a third organic light-emitting layer (142b) and a third cathode electrode (143b) of a third organic light-emitting element (140b), and a third extended organic light-emitting layer (142ba), a third extended cathode electrode (143ba), and a third subpixel protective layer (151b) of a third connection pattern (140ba) can be formed.

[0319] The third organic light-emitting layer (142b) and the third extended organic light-emitting layer (142ba) may be formed using a blue organic light-emitting film (142b'). The third cathode electrode (143b) and the third extended cathode electrode (143ba) may be formed using a blue cathode film (143b'). The third subpixel protection layer (151b) may be formed using an insulating film (151-3). The third subpixel protection layer (151b) may be formed on the third cathode electrode (143b) and / or the third extended cathode electrode (143ba).

[0320] Blue multilayer patterning (step m) is the same process as red multilayer patterning (step g), so further explanation is omitted (Fig. 17k).

[0321] Step n: Pixel protection layer deposition (Fig. 17l)

[0322] As illustrated in FIG. 17j, a blue multilayer photo process may be performed first, so that a third photosensitive pattern (230) may be formed on the blue multilayer (step l). Thereafter, steps m and n may be sequentially performed while maintaining a vacuum and moving between chambers. That is, as illustrated in FIG. 17k, after the blue multilayer is patterned in a vacuum atmosphere (step m), as illustrated in FIG. 17l, a pixel protection layer (152a) may be deposited in a vacuum atmosphere (step n).

[0323] As a result of step m, a third organic light-emitting layer (142b) and a third cathode electrode (143b) of a third organic light-emitting element (140b), a third extended organic light-emitting layer (142ba) of a third connection pattern (140ba), a third extended cathode electrode (143ba), and a third subpixel protective layer (151b) may be formed. In this case, the side surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) may be exposed.

[0324] As illustrated in FIGS. 17e, 17h, and 17k, the first cathode electrode (143r), the second cathode electrode (143g), the third cathode electrode (143b), and the like may include a metal, an oxide conductive film, a metal alloy, and the like. As the metal for the cathode electrode, Ag, Al, Zn, In, Sn, Mg:Ag, Ca:Ag, and the like, which have a work function of 4.0 eV or more, are easy to dry-etch, and have good reflectivity, may be used. When the cathode electrode has a double structure, Zn, Sn, and Ag may be provided among the metals in consideration of the problem of contact resistance with the bridge metal as the upper layer, the reaction with the etching gas in the dry-etching process for removing the film on the upper part of the cathode electrode, or the contact resistance caused by the reaction. ITO, IZO, and the like may be used as the oxide conductive film. In addition, the first cathode electrode (143r), the second cathode electrode (143g), the third cathode electrode (143b), etc. may be a single layer or may include different multilayer conductive films.

[0325] As illustrated in FIGS. 17e, 17h, and 17k, the first subpixel protective layer (151r), the second subpixel protective layer (151g), and the third subpixel protective layer (151b) can prevent damage to the first organic light-emitting layer (142r), the second organic light-emitting layer (142g), and the third organic light-emitting layer (142b) during the photo process and the etching process. The first subpixel protective layer (151r), the second subpixel protective layer (151g), and / or the third organic light-emitting layer (142b) may include an insulating organic material, an insulating inorganic material, an insulating oxide film, or a multilayer film composed of these. Polyimide may be used as the organic material, SiO2, SiON, SiNx, etc. may be used as the inorganic material, and Al2O3, etc. may be used as the insulating oxide film.

[0326] In step k, when the substrate (100) is moved to a photo equipment in an air atmosphere to perform step l while the insulating film (151-3) constituting the blue multilayer is not formed, the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) are exposed to the air atmosphere, so that the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) are oxidized, losing their function as electrodes and causing dark spot defects.

[0327] However, in the embodiment, since the insulating film (151-3) constituting the blue multilayer is formed on the upper surface of the blue cathode film (143b'), even if the substrate (100) is moved to a photo equipment in an atmospheric atmosphere to perform step l, the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) are not exposed to the atmospheric atmosphere by the third subpixel protective film, so that a dark spot defect can be prevented.

[0328] Meanwhile, even if the insulating film (151-3) constituting the blue multilayer is formed to prevent dark spot defects, at least the side surface of the third extended cathode electrode (143ba) of the third connecting pattern (140ba) may be exposed as a result of the m step. If the substrate (100) is moved to a photo equipment in an air atmosphere to perform the l step immediately without performing the n step, the exposed side surface of the third extended cathode electrode (143ba) may be exposed to the air atmosphere, and the side surface of the third extended cathode electrode (143ba) may be oxidized.

[0329] However, in the embodiment, step n is performed sequentially in a vacuum atmosphere after step m, so that the pixel protection layer (152) is formed on the third organic light-emitting element (140b) and the third connection pattern (140ba), so that the side surface of the third extended cathode electrode (143ba) of the first connection pattern (140ra) is not exposed by the pixel protection layer (152). Even if the substrate (100) is moved to a photo equipment and exposed to an air atmosphere to perform step l thereafter, the side surface of the third extended cathode electrode (143ba) may not be oxidized by oxygen or the like.

[0330] In summary, in the embodiment, when the blue multilayer film is formed, an insulating film (151-3) is formed on the uppermost layer to form a third subpixel protection layer (151b), thereby preventing oxidation of the third cathode electrode (143b) of the third organic light-emitting element (140b) and the third extended cathode electrode (143ba) of the third connection pattern (140ba). In addition, in the embodiment, when the blue multilayer is patterned so that at least a side surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) is exposed (step m), after the pixel protection layer (152) is formed, the substrate (100) may be moved to a photo equipment in an air atmosphere to perform a contact hole photo process (step o). In this case, since the side surface of the third extended cathode electrode (143ba) is not exposed by the pixel protection layer (152), it may not be oxidized by oxygen or the like.

[0331] As described above, in the patterning process, the substrate is performed face-up, and in the deposition process, the substrate is performed face-down. Therefore, various additional mechanical operations may be required, such as the substrate being flipped, moved with a chuck, and aligned and mounted on a tray before or after moving between chambers in a vacuum atmosphere, as in the case of the 'g-step patterning ~ h-step deposition' and 'j-step patterning ~ k-step deposition'. However, since the m-step and n-step are both face-up processes, the system becomes capable of moving materials between 'process chambers' using a robot arm within a 'cluster chamber'. Therefore, by performing the m-step and n-step continuously in a cluster manner in a vacuum atmosphere, the process time is significantly shortened, which improves productivity, and the management of foreign substances is facilitated, which improves product quality.

[0332] In summary, the manufacturing system in the embodiment can perform patterning of a red multilayer and deposition of a red organic light-emitting film (142r'), patterning of a green multilayer and deposition of a green organic light-emitting film (142g'), and patterning of a blue multilayer and deposition of a blue organic light-emitting film (142b'), respectively. In this case, equipment including dry etching and ashing processes, i.e., 'multilayer patterning equipment', and 'inline deposition equipment' including an organic light-emitting film deposition process and a cathode film deposition process are connected by vacuum logistics, and a manufacturing system having a chamber or function for flipping a substrate in the connecting section may be required.

[0333] In the above, the red multilayer, the green multilayer, and the blue multilayer may be referred to as the first multilayer, the second multilayer, and the third multilayer, respectively.

[0334] Meanwhile, by performing step n, a pixel protection film (152a) can be formed. As illustrated in FIG. 17l, the pixel protection film (152a) can be formed in the display area of ​​the substrate (100). Accordingly, the side surface of the exposed first extended cathode electrode (143ra), the side surface of the exposed second extended cathode electrode (143ga), and the side surface of the exposed third extended cathode electrode (143ba) can be protected by the pixel protection film (152a).

[0335] Step o: Contact hole photo (Fig. 17l)

[0336] A photo process (o step) and an etching process (p step) may be performed so that a first cathode contact hole (186) of a first cathode connection structure (181) may be formed in a non-emission area (NEA-1, NEA-2) of a first subpixel (SPr), a second cathode contact hole (187) of a second cathode connection structure (182) may be formed in a non-emission area (NEA-1, NEA-2) of a second subpixel (SPg), and a third cathode contact hole (188) of a third cathode connection structure (183) may be formed in a non-emission area (NEA-1, NEA-2) of a third subpixel (SPb).

[0337] Specifically, as illustrated in FIG. 17l, a contact hole photo process is first performed so that a fourth photosensitive pattern (240) can be formed on a pixel protective film (152a) (step o).

[0338] Step p: Contact hole patterning (Fig. 17m)

[0339] As illustrated in FIG. 17m, after the pixel protection film (152a), the first subpixel protection layer (151r) to the third subpixel protection layer (151b) are patterned (p step) in the dry etching equipment, and the fourth photosensitive pattern (240) is removed in the ashing equipment, the substrate can be moved to a sputtering equipment for forming a bridge electrode by a vacuum-maintaining process. If the bridge electrode is formed by vacuum evaporation rather than by the sputtering equipment, a substrate inversion chamber similar to the aforementioned manufacturing system may be included in the vacuum process.

[0340] As shown in Fig. 17n, a bridge electrode (190a) can be formed using a sputtering device or a vacuum deposition device (step q).

[0341] Although the p-step and q-step can be performed sequentially in a vacuum atmosphere, this is not limited thereto.

[0342] As a result of the p step, a first cathode contact hole (186) of the first cathode connection structure (181), a second cathode contact hole (187) of the second cathode connection structure (182), and a third cathode contact hole (188) of the third cathode connection structure (183) may be formed. In this case, a side surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra), a side surface of the second extended cathode electrode (143ga) of the second connection pattern (140ga), and a side surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) may be exposed through the first cathode contact hole (186), the second cathode contact hole (187), and the third cathode contact hole (188).

[0343] In addition, as a result of the p step, a pixel protection layer (152) can be formed in the display area of ​​the substrate (100) except for the first cathode contact hole (186) to the third cathode contact hole (188). In addition, a power contact hole (171) of a power connection structure (170) can be formed on the power wiring (111, 112) (Fig. 17m).

[0344] Meanwhile, when forming contact holes (186, 187, 188, 171) by dry etching and using oxygen gas in the ashing process to remove the residual photoresist, the surface of the exposed cathode electrode may be oxidized, which may affect the contact resistance. Therefore, care must be taken in selecting the cathode material as described above and in the process. Therefore, in order to secure the display performance of the structures of the embodiments during the contact hole formation process, a key process management item is the management of the contact resistance between the cathode electrode and the bridge electrode. If there is a partial difference, a spot defect or, in severe cases, a dark spot defect may occur, and if it is high overall, power consumption may increase.

[0345] When selecting a dry etching gas type depending on the cathode material, care must be taken to avoid using argon or oxygen when the cathode is magnesium (Mg) or silver (Ag). Doing so may oxidize the cathode surface or etch the cathode film.

[0346] In addition, as described above, during dry etching of the inorganic film, a stable cathode electrode structure that may not be etched or oxidized and that has low contact resistance with the bridge electrode even if oxidized may be required. For example, in a double film, the lower layer may be a layer that contacts the electron injection layer (EIL), and the upper layer may be a structure designed with a material that has low contact resistance even if partially oxidized to contact the bridge electrode. Ag, Al, Zn, In, Sn, Mg:Ag, Ca:Ag, etc. are effective for the lower layer (electron injection cathode), and it may be preferable to use Zn, Sn, Ag, ITO, IZO, etc. for the upper layer (bridge contact cathode).

[0347] The electron injection layer (EIL) to be connected to these new cathode electrodes is preferably made of ytterbium (Yb), yttrium (Y), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), calcium (Ca), strontium (Sr), barium (Ba), radium (Ra), scandium (Sc), lanthanum (La), cerium (Ce), ruthenium (Ru), and samarium (Sm), which have relatively low work functions (below 4.0 eV).

[0348] Step q: Bridge electrode deposition (Fig. 17n)

[0349] The bridge electrode (190a) may include a metal, an oxide conductive film, a metal alloy, an organic conductive film, etc., and may include a single layer or different multilayer conductive films. If it is not transparent, it may be Al, an Al alloy, Mo, MoTi, or a double or triple layer containing these, which are easy to dry etch and have relatively low resistance. For example, it may be Mo / Al / Mo, MoTi / Al / MoTi, Al / Mo, Al / MoTi. The transparent conductive film may be IZO or ITO, but is not limited thereto.

[0350] When the substrate (100) is moved to a photo equipment in an atmospheric atmosphere to perform the r step immediately without performing the q step, the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) exposed in the contact holes (186, 187, 188) may be oxidized.

[0351] However, in the embodiment, the q step is performed continuously in a vacuum atmosphere after the p step, so that the bridge electrode (190) is formed at least in the first cathode contact hole (186) to the third cathode contact hole (188), so that the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) are not exposed by the bridge electrode (190). Even if the substrate (100) is moved to a photo equipment and exposed to an air atmosphere to perform the l step thereafter, the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) may not be oxidized by oxygen or the like.

[0352] In summary, in the embodiment, in a state where the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) are exposed (p step) through the first cathode contact hole (186) to the third cathode contact hole (188), the substrate (100) may be moved to a photo equipment in an air atmosphere to perform the r step after the bridge electrode (190) is formed. In this case, since the side surfaces of the first extended cathode electrode (143ra) to the third extended cathode electrode (143ba) are not exposed by the bridge electrode (190), they may not be oxidized by oxygen or the like. In addition, since the p step and the q step are continuously performed inline in a vacuum atmosphere, the process time is significantly shortened, thereby improving productivity, and foreign matter management can be easily improved, thereby improving product quality.

[0353] Meanwhile, by performing step q, a bridge electrode (190) can be formed. As shown in FIG. 17n, the bridge electrode (190) can be formed in the display area of ​​the substrate (100).

[0354] r step: bridge electrode photo (Fig. 17o)

[0355] In addition, a photo process (r step) and an etching process (s step) are performed so that the bridge electrode (190) can be formed in various shapes (Fig. 1, Fig. 2, Fig. 10, Fig. 11).

[0356] Specifically, as illustrated in FIG. 17o, a bridge electrode photo process is first performed so that a fifth photosensitive pattern (250) can be formed on the bridge electrode (step r).

[0357] Afterwards, the s-step and t-step can be performed sequentially in a vacuum atmosphere, but this is not limited thereto.

[0358] Step s: Bridge electrode patterning (Fig. 17p)

[0359] As illustrated in FIG. 17p, after dry etching the bridge electrode (190) in a vacuum atmosphere (step s), not only the bridge electrode (190) but also the pixel protection layer (152) and the first subpixel protection layer (151r) to the third subpixel protection layer (151b) can be removed. Since the bridge electrode (190), the pixel protection layer (152) and the first subpixel protection layer (151r) to the third subpixel protection layer (151b) are removed through the fifth photosensitive pattern (250), the pixel protection layer (152) and the first subpixel protection layer (151r) to the third subpixel protection layer (151b) can be patterned to correspond to the shape of the patterned bridge electrode (190).

[0360] In this case, if the vacuum is maintained while the upper portion of the cathode electrode (143r, 143g, 143b) is completely removed and the next process is not performed, the cathode electrode (143r, 143g, 143b) is oxidized and the organic light-emitting layer (142r, 142g, 142b) is damaged by moisture and oxygen (s step).

[0361] In addition, the reason for removing both the pixel protection layer (152) and the subpixel protection layer (151r, 151g, 151b) disposed on top of the cathode electrode (143r, 143g, 143b) may be to improve the light extraction efficiency in terms of product performance, but from the process perspective for improving yield, it may be because it is easy to repair the organic light-emitting element before proceeding to the next process, step t (encapsulation film formation, FIG. 17q).

[0362] The repair method can apply a reverse voltage to the organic light-emitting element in an atmosphere containing a small amount of oxygen or moisture while maintaining a vacuum with the cathode electrodes (143r, 143g, 143b) exposed. In this case, if a pixel protection layer (152) and a subpixel protection layer (151r, 151g, 151b) are arranged on top of the cathode electrodes (143r, 143g, 143b), repair may not be possible because oxygen does not reach or the cathode is not partially removed thermally. Accordingly, by removing the upper layers disposed on the cathode electrodes (143r, 143g, 143b), i.e., the pixel protection layer (152) and the subpixel protection layer (151r, 151g, 151b), the subpixels in which the organic light-emitting element has an electrical leak or is short-circuited and has become dark spots can have the cathode electrodes (143r, 143g, 143b) partially oxidized or removed by overcurrent. Through this process, the subpixels that are dark spots are repaired back to normal subpixels. The yield can be improved due to the rapid reduction in the number of dark spots per panel (from 100 to 3), which is a key specification of a good panel.

[0363] Step t: Sealing the tabernacle (Fig. 17q)

[0364] Accordingly, by transporting the substrate while maintaining a vacuum, a cathode protective film (155) and an encapsulation layer (160) can be formed in equipment in which a vacuum deposition chamber and a PECVD chamber are connected inline (Fig. 17q). As a result of proceeding in this manner, an organic light-emitting display device according to the sixth embodiment (Fig. 12) and the seventh embodiment (Fig. 13) can be manufactured.

[0365] In addition, in the manufacturing process for the structures of the sixth embodiment (Fig. 12) and the seventh embodiment (Fig. 13), the patterned pixel protection layer (152) may be disposed on the side of the first extended organic light-emitting layer (142ra) of the first connection pattern (140ra), the side of the second extended organic light-emitting layer (142ga) of the second connection pattern (140ga), and the side of the third extended organic light-emitting layer (142ba) of the third connection pattern (140ba). The first extended organic light-emitting layer (142ra), the second extended organic light-emitting layer (142ga), and the third extended organic light-emitting layer (142ba) may be formed to extend from the first organic light-emitting layer (142r), the second organic light-emitting layer (142g), and the third organic light-emitting layer (142b), respectively. The first organic light-emitting layer (142r), the second organic light-emitting layer (142g), and the second organic light-emitting layer (142g) may include at least one low-resistance layer, such as a charge generation layer or a hole injection layer.

[0366] When the bridge electrode (190) is in contact with the side surface of the first extended organic light-emitting layer (142ra), the side surface of the second extended organic light-emitting layer (142ga), and the side surface of the third extended organic light-emitting layer (142ba), an electrical short may occur between them, which may cause a dark spot defect. However, in the embodiment, the bridge electrode (190) is electrically insulated from the side surface of the first extended organic light-emitting layer (142ra), the side surface of the second extended organic light-emitting layer (142ga), and the side surface of the third extended organic light-emitting layer (142ba) by the patterned pixel protection layer (152), so that an electrical short or current leak between the bridge electrode (190) and the first to third extended organic light-emitting layers (142ra) to (142ba) is blocked, thereby preventing a dark spot defect or a color spot defect.

[0367] Meanwhile, as a result of the s step, the upper surface of the first cathode electrode (143r) of the first organic light-emitting element (140r), the upper surface of the second cathode electrode (143g) of the second organic light-emitting element (140g), and the upper surface of the third cathode electrode (143b) of the third organic light-emitting element (140b) may be exposed. The upper surface of the first extended cathode electrode (143ra) of the first connection pattern (140ra), the upper surface of the second extended cathode electrode (143ga) of the second connection pattern (140ga), and the upper surface of the third extended cathode electrode (143ba) of the third connection pattern (140ba) may also be exposed, but this is not limited thereto.

[0368] In the embodiment, the transfer process from step s to step t is continuously performed in a vacuum atmosphere, and the sealing layer (160) is formed as a film on the substrate (100), so that the upper surfaces of the cathode electrodes (143r, 143g, 143b) of the organic light-emitting elements (140r, 140g, 140b) and the upper surfaces of the extended cathode electrodes (143ra, 143ga, 143ba) of the connection patterns (140ra, 140ga, 140ba) are covered by the sealing layer (160) and are not exposed. Accordingly, even if the substrate (100) is exposed to an air atmosphere, the upper surfaces are not exposed by the sealing layer (160), and thus may not be oxidized by oxygen or the like.

[0369] In addition, since the s-step and t-step are performed continuously in-line in a vacuum atmosphere, the process time is significantly shortened, productivity is improved, and foreign matter management is facilitated, so product quality can be improved.

[0370] As illustrated in FIG. 17q, a cathode protective layer (145r, 145g, 145b) may be formed on the substrate (100) before the sealing layer (160) is formed, but this is not limited thereto.

[0371] Although not shown, the cathode protection layers (145r, 145g, 145b) may also be formed using photo and etching when individually forming the first subpixel (SPr), the second subpixel (SPg), and the third subpixel (SPb). That is, as shown in FIG. 17c, the first cathode protection layer (145r) may be formed on the red cathode film (143r'), and the insulating film (151-1) may be formed on the first cathode protection layer (145r). As shown in FIG. 17f, the second cathode protection layer (145g) may be formed on the green cathode film (143g'), and the insulating film (151-2) may be formed on the second cathode protection layer (145g). As shown in FIG. 17i, a cathode protection layer (155) can be formed on a green cathode film (143b'), and an insulating film (151-3) can be formed on a third cathode protection layer (145b).

[0372] Thereafter, another encapsulating layer is added on the encapsulating layer (160) (step u), and the aforementioned substrate (100) is bonded to the upper substrate (100), so that an organic light-emitting display device according to the embodiment shown in FIG. 14 can be manufactured.

[0373] Meanwhile, although not shown, after completing the contact hole patterning (p step) in FIG. 17m, in the step of forming a bridge electrode film in FIG. 17n, a Cell Mask is mounted on the sputter equipment to cover the non-display area for each cell and form a film only in the display area, and then a transparent conductive film is formed in the display area, and then the bridge electrode photo process (r step) and the bridge electrode patterning process (s step) are omitted and the sealing layer film formation process (t step) is performed, whereby an organic light-emitting display device according to the fourth embodiment (FIG. 8) and the fifth embodiment (FIG. 9) can be manufactured.

[0374] In addition, although not shown, in the bridge electrode patterning (s step), only the bridge electrode (190) may be etched, and the pixel protection layer (152) and the first subpixel protection layer (151r) to the third subpixel protection layer (151b) may not be removed. After only the bridge electrode (190) is patterned through the fifth photosensitive pattern (250), the fifth photosensitive pattern may be removed (strip or ashing), and the sealing layer (160) may be formed. As a result of proceeding in this manner, an organic light-emitting display device according to the first embodiment (Fig. 4) can be manufactured when there is no pixel protection layer, the second embodiment (Fig. 5) when there is a pixel protection layer and it is an inorganic material, and the third embodiment (Fig. 6) when the pixel protection layer is an organic material.

[0375] Meanwhile, steps g and h, steps j and k, and steps m and n in FIG. 15 can be performed in a manufacturing system for an organic light-emitting display device according to the embodiment illustrated in FIG. 16, respectively.

[0376] As illustrated in Fig. 16, the manufacturing system for an organic light-emitting display device according to an embodiment can be implemented in an inline manner. The manufacturing system for an organic light-emitting display device according to an embodiment can largely include a patterning device (310) and a film forming device (320).

[0377] The patterning equipment (310) is equipped with a robot arm in the center of the cluster chamber and multiple chambers can be installed in a ring shape.

[0378] The plurality of chambers may include a loading chamber, a dry etcher (DE), an asher (Ash), a plasma treatment chamber (PT), a flip chamber, a buffer chamber (Buf), etc.

[0379] The loading chamber may be an entrance for loading a substrate (100) into the patterning equipment (310). The robot arm may transport and return the substrate (100) loaded through the loading chamber to the corresponding chamber in a preset order.

[0380] A dry etcher (DE) may be a member for etching a specific area on a substrate (100) to form a pattern. An asher may be a member for removing a photosensitive pattern. A plasma treatment chamber (PT) may be a member for removing organic components that may remain on the surface of an anode electrode during the dry etching and ashing processes and for uniformizing and stabilizing the work function of the anode across the entire substrate. A flip chamber may be a member for rotating a substrate (100) so that a substrate that has been processed in a face-up state in a patterning device can be input into a deposition device in a face-down state. A buffer chamber may be a member for connecting a patterning device (310) and a film deposition device (320). A substrate (100) on which a patterning process has been completed by the patterning device (310) may be transferred to the film deposition device (320) through the buffer chamber.

[0381] The film forming equipment (320) may include a plurality of chambers. The plurality of chambers may include an organic light emitting chamber, a cathode chamber, a buffer chamber, a flip chamber, an atomic layer deposition chamber (ALD), a chemical vapor deposition chamber (CVD), a stocker chamber (Stk), an unloading chamber, etc.

[0382] A flip chamber, an atomic layer deposition (ALD) chamber, a chemical vapor deposition (CVD) chamber, a stocker chamber (Stk), and an unloading chamber may be installed in an annular configuration with a robotic arm at the center of the cluster chamber. The cluster chamber may be connected to the cathode chamber via a buffer chamber. Substrates may be transferred from the cathode chamber to the cluster chamber via the buffer chamber.

[0383] The organic light-emitting chamber is a component for forming a multi-layered organic light-emitting layer, and can be connected to a patterning device. The organic light-emitting chamber is composed of a plurality of sub-chambers, and the multi-layered organic light-emitting layer can be formed by passing through these sub-chambers. The plurality of sub-chambers can be arranged in an inline manner. That is, the plurality of sub-chambers can be arranged in the same direction as the path of the substrate (100).

[0384] The cathode chamber may be a member for forming a cathode electrode. The cathode chamber may be connected to the organic light-emitting chamber. The cathode chamber may be arranged in the same direction as the path along which the substrate (100) advances. In addition to the cathode chamber, an additional cathode chamber for forming a cathode protective layer may be provided. The cathode chamber and the additional cathode chamber may be arranged in the same direction as the plurality of sub-chambers constituting the organic light-emitting chamber.

[0385] The buffer chamber may be a component for transporting a substrate (100) that has completed a process in the cathode chamber to a center where a robot arm is installed. The robot arm may transport and return the substrate (100) received through the buffer chamber to the corresponding chamber according to a preset order.

[0386] The flip chamber may be a member for rotating the substrate (100).

[0387] An atomic layer deposition chamber (ALD) may be a member for depositing an oxide layer. A chemical vapor deposition chamber (CVD) may be a member for depositing a nitride layer, an oxide layer, or a nitride layer. First, an oxide layer may be deposited through an atomic layer deposition chamber (ALD), and then a nitride layer, an oxide layer, or a nitride layer may be deposited through a chemical vapor deposition chamber (CVD). A multilayer film composed of an oxide film and a nitride film may be used as an insulating film for forming, for example, a first subpixel protection layer (151r) (Fig. 17e), a second subpixel protection layer (151g) (Fig. 17h), a third subpixel protection layer (151b) (Fig. 17k), and a pixel protection layer (152) (Fig. 17m).

[0388] The unloading chamber may be a member for transporting a substrate (100) on which a deposition process in a vapor deposition chamber (CVD) has been completed to the outside.

[0389] In order to deposit a pixel protection layer (152a in FIG. 17l) or an encapsulation layer (160 in FIG. 17q) in step n or step t, among the multiple chambers included in the deposition equipment (320), the organic light-emitting chamber, the cathode chamber, etc. may be omitted.

[0390] Meanwhile, steps (p) and (q) and steps (s) and (t) in FIG. 15 may be performed in a structure similar to the manufacturing system of the organic light-emitting display device according to the embodiment illustrated in FIG. 16, respectively.

[0391] Figs. 18a and 18b are a plan view and a cross-sectional view, respectively, illustrating an organic light-emitting display device according to a 15th embodiment. Except for the power connection structure in the structure illustrated in Fig. 18b, the remaining structure may be the same as in the 4th to 6th embodiments, the 8th to 9th embodiments, and the 12th to 14th embodiments.

[0392] As illustrated in FIGS. 18a and 18b, a power connection structure (170) may be installed in a three-way region where a first subpixel (SPr), a second subpixel (SPg), and a third subpixel (SPb) meet within one pixel (P). In this case, a bridge electrode (190) in the power connection structure (170) may be directly connected simultaneously to a first cathode connection structure (181), a second cathode connection structure (182), and a third cathode connection structure (183). This connection structure may be referred to as a three-way simultaneous connection structure.

[0393] The first cathode connection structure (181), the second cathode connection structure (182), the third cathode connection structure (183), and the power connection structure (170) can be connected by forming a bridge electrode (190) on the cathode and power simultaneous connection structure (000, hereinafter referred to as simultaneous connection structure). This structure can provide a structure capable of maximizing EAR in high-resolution products.

[0394] Although not shown, the power connection structure (170) is arranged at a four-way intersection as shown in FIG. 2b, and the bridge electrode (190) in the power connection structure (170) can be directly connected to the first cathode connection structure (181), the second cathode connection structure (182), and the third cathode connection structure (183) simultaneously. This connection structure can be called a four-way simultaneous connection structure.

[0395] Meanwhile, when calculating the order of the size of EAR for various possible connection structures, it can decrease in the following order: 4-way simultaneous connection structure, 3-way simultaneous connection structure (Fig. 18a), 4-way 4-through-hole connection structure (Fig. 10), and 3-way 4-through-hole connection structure (Fig. 2a). However, depending on whether an undercut occurs in the dry-etched cross-section when forming the through-hole, which type of power connection structure (170) will be applied can be determined among the types of power connection structures (170).

[0396] The above detailed description should not be construed as limiting in any respect and should be considered illustrative only. The scope of the embodiments should be determined by a reasonable interpretation of the appended claims, and all modifications within the equivalency range of the embodiments are intended to be included within the scope of the embodiments.

Claims

1. A substrate including a pixel including first to third subpixels, each of the first to third subpixels including an emitting area and a non-emitting area surrounding the emitting area; Power wiring on the above substrate; A bank disposed on the above power wiring and disposed in the non-light-emitting area; First to third connection patterns arranged on the bank and extending from the light-emitting area to the non-light-emitting area; Power connection structure on the above power wiring; First cathode connection structure to third cathode connection structure arranged on the first connection pattern to the third connection pattern; and A bridge electrode is disposed on the first to third connection patterns, electrically connected to the power wiring through the power connection structure, and electrically connected to the first to third connection patterns through the first to third cathode connection structures; The first subpixel includes a first organic light-emitting element, The second subpixel includes a second organic light-emitting element, The third subpixel comprises a third organic light-emitting element, Organic light emitting display device.

2. In paragraph 1, The first to third organic light-emitting elements each include an anode electrode, an organic light-emitting layer, and a cathode electrode, The first to third connection patterns are, respectively, An extended organic light-emitting layer formed by extending the organic light-emitting layer from the light-emitting region to the non-light-emitting region; An extended cathode electrode formed by extending from the light-emitting region to the non-light-emitting region and disposed on the extended organic light-emitting layer; and At least one layer of a cathode protection layer, a subpixel protection layer and a pixel protection layer on the extended cathode electrode; Organic light emitting display device.

3. In paragraph 2, The above cathode electrode contains silver (Ag), zinc (Zn), aluminum (Al) and indium (In), The electron injection layer of the organic light-emitting layer includes a material including at least one selected from among ytterbium (Yb), yttrium (Y), lithium (Li), sodium (Na), potassium (K), rubidium (Rb), cesium (Cs), calcium (Ca), strontium (Sr), barium (Ba), radium (Ra), scandium (Sc), lanthanum (La), cerium (Ce), ruthenium (Ru), and samarium (Sm) having a work function of 4.0 eV or less. Organic light emitting display device.

4. In paragraph 2, wherein at least one layer is disposed on the cathode electrode, The above bridge electrode is arranged on at least one of the arranged layers, Organic light emitting display device.

5. In paragraph 2, The above power connection structure includes a power contact hole formed so that the power wiring is exposed, The first to third cathode connection structures each include a first to third cathode contact hole formed through at least one layer so that the extended cathode electrode is exposed. Organic light emitting display device.

6. In paragraph 5, The bridge electrode is electrically connected to the power wiring through the power contact hole, and is disposed on at least one layer and electrically connected to the extended cathode electrode through the first cathode contact hole to the third cathode contact hole. Organic light emitting display device.

7. In paragraph 2, The above subpixel protective layer is disposed on the cathode electrode, The above pixel protection layer is disposed on the subpixel protection layer, The above pixel protection layer is disposed on the side of the extended cathode electrode in the power contact hole. Organic light emitting display device.

8. In paragraph 2, The above pixel protection layer has a multilayer film structure including a transparent resin and an inorganic film or multiple inorganic films on the lower portion of the transparent resin. Organic light emitting display device.

9. In paragraph 2, The cathode protective layer is disposed on the cathode electrode and the extended cathode electrode. Organic light emitting display device.

10. In paragraph 2, The cathode protective layer is disposed on the cathode electrode and the bridge electrode. Organic light emitting display device.

11. In paragraph 2, Further comprising an encapsulation layer on at least one layer in the light-emitting area and the non-light-emitting area of ​​the first to third subpixels; Organic light emitting display device.

12. In paragraph 1, The above bridge electrodes are arranged in the light-emitting area and the non-light-emitting area of ​​the first to third subpixels. Organic light emitting display device.

13. In paragraph 1, The first to third subpixels are respectively arranged in a stripe shape along the second direction, The above power connection structure is arranged below the bank at the intersection of the non-luminous region in the first direction and the non-luminous region in the second direction, The first to third cathode connection structures are respectively arranged on the bank. Organic light emitting display device.

14. In paragraph 13, The above first cathode connection structure is arranged on the bank between the first subpixels adjacent in the second direction, The second cathode connection structure is arranged on the bank between the second subpixels adjacent in the second direction, The third cathode connection structure is arranged on the bank between the third subpixels adjacent to the second direction. Organic light emitting display device.

15. In paragraph 13, The above bridge electrodes are, A first bridge electrode disposed across the first cathode connection structure to the third cathode connection structure on the bank along the first direction; Organic light emitting display device.

16. In paragraph 15, The above bridge electrodes are, Further comprising a second bridge electrode electrically connected to the first bridge electrode and arranged lengthwise on the second bank along the second direction; Organic light emitting display device.

17. In paragraph 1, The first subpixel and the second subpixel are arranged in a dot shape, The above third subpixels are arranged in a stripe shape along one direction, The first to third cathode connection structures are arranged so as to be spaced as close as possible from the power connection structure. Organic light emitting display device.

18. In paragraph 17, The above bridge electrodes are, arranged to cover the first cathode connection structure to the third cathode connection structure spaced as close as possible from the power connection structure; Organic light emitting display device.

19. In paragraph 1, Further comprising a bank protection layer on the above bank; The above bank comprises an organic film, The above bank protection layer comprises a mineral film, Organic light emitting display device.

Images