Structure and structure manufacturing method

Abstract

Provided are: a structure which is excellent in antenna gain of a transmission antenna element and in which the influence of an electromagnetic field between a transmission antenna element and a reception antenna element is reduced; and a structure manufacturing method. The structure includes: a substrate; a transmission antenna element and a reception antenna element that are arranged on one surface side of the substrate; and a plurality of magnetic body sections that are arranged in the substrate so as to extend in the thickness direction of the substrate and be separated from each other.

Description

Structure and method for manufacturing the structure

[0001] The present invention relates to a structure in which a transmitting antenna element and a receiving antenna element are arranged on one side of a substrate, and a method for manufacturing the structure, and in particular to a structure having an electromagnetic wave shielding function between the transmitting antenna element and the receiving antenna element, and a method for manufacturing the structure.

[0002] Currently, RF (Radio Frequency) devices such as motion sensors and autonomous driving radars have their transmitting and receiving antennas arranged adjacent to each other. In this configuration, there is a need for space-saving and efficient electromagnetic wave shielding for the transmitting and receiving antennas to reduce the influence of radio waves from the transmitting antenna and improve the sensitivity of the receiving antenna.

[0003] For example, Patent Document 1 describes a signal transmitter / receiver in which an alternating laminate unit and a support are installed in the center of a transmitting antenna and a receiving antenna, and the alternating laminate unit is made up of 5 to 1000 layers of A and B layers with different electrical conductivities stacked alternately. It is also described that the alternating laminate unit contains an electromagnetic wave absorbing material.

[0004] JP 2023-145382 A

[0005] In Patent Document 1, an alternating laminated unit is arranged in the center of the transmitting antenna and the receiving antenna, but the electromagnetic wave shielding is insufficient. Increasing the output of the transmitting element degrades the sensitivity of the receiving element. An object of the present invention is to provide a structure and a method for manufacturing the structure that has excellent antenna gain of the transmitting antenna element and reduces the influence of the electromagnetic field between the transmitting antenna element and the receiving antenna element.

[0006] The above-mentioned object can be achieved by the following configuration. Invention [1] is a structure having a substrate, a transmitting antenna element and a receiving antenna element arranged on one surface of the substrate, and a plurality of magnetic material parts arranged within the substrate, extending in the thickness direction of the substrate and spaced apart from each other. Invention [2] is the structure according to invention [1], in which, when the substrate is viewed from the normal direction of one surface, the magnetic material parts are arranged around the transmitting antenna element and the receiving antenna element.

[0007] Invention [3] is a structure having a substrate, a transmitting antenna element and a receiving antenna element arranged on one side of the substrate, a magnetic wall portion arranged on one side of the substrate so as to surround the transmitting antenna element and the receiving antenna element except between the transmitting antenna element and the receiving antenna element, and a magnetic portion arranged on the other side of the substrate. Invention [4] is the structure according to Invention [3], in which the magnetic portion is arranged so as to cover the entire surface of the other side of the substrate. Invention [5] is the structure according to any one of Inventions [1] to [4], in which the magnetic portion includes magnetic particles.

[0008] Invention [6] is a structure including a substrate, a transmitting antenna element and a receiving antenna element arranged on one surface of the substrate, and a magnetic layer arranged on the substrate, wherein the magnetic layer includes a first magnetic material portion arranged between the transmitting antenna element and the receiving antenna element when viewed from the normal direction of the one surface of the substrate, a second magnetic material portion arranged between the first magnetic material portion and the transmitting antenna element, a third magnetic material portion arranged between the first magnetic material portion and the receiving antenna element, and a fourth magnetic material portion connecting the first magnetic material portion, the second magnetic material portion, and the third magnetic material portion, wherein the fourth magnetic material portion is arranged to avoid the area where the transmitting antenna element and the receiving antenna element are provided. Invention [7] is the structure according to Invention [6], in which a magnetic material layer is arranged on one surface of the substrate. Invention [8] is the structure according to Invention [6], in which a magnetic material layer is arranged on the other surface of the substrate. Invention [9] is a structure described in Invention [2], in which, in the magnetic layer, the first magnetic material portion, the second magnetic material portion, and the third magnetic material portion are linear members extending in one direction, and the fourth magnetic material portion is a linear member extending in another direction perpendicular to the one direction, the first magnetic material portion, the second magnetic material portion, and the third magnetic material portion are spaced apart from each other and arranged parallel to each other, and the fourth magnetic material portion connects the first magnetic material portion, the second magnetic material portion, and the third magnetic material portion at their ends in one direction.

[0009] Invention

[10] is the structure according to any one of Inventions [6] to [9], in which the magnetic layer contains magnetic particles. Invention

[11] is the structure according to any one of Inventions [1] to [5], in which the magnetic part has a complex relative magnetic permeability μ, where the real part is μ' and the complex part is μ", and μ" is 0.01 to 10 at frequencies of 1 to 40 GHz, and μ" is 0.01 to 5 at frequencies greater than 40 and equal to or less than 100 GHz. Invention

[12] is the structure according to any one of Inventions [6] to

[10] , in which the magnetic layer has a complex relative magnetic permeability μ, where the real part is μ' and the complex part is μ", and μ" is 0.01 to 10 at frequencies greater than 40 and equal to or less than 100 GHz. Invention

[13] is the structure according to any one of Inventions [1] to

[11] , having an interposer stacked on a substrate. Invention

[14] is the structure according to any one of Inventions [5] to [9], in which the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and have a number average particle size of 20 nm to 50 μm. Invention

[15] is the structure according to any one of Inventions

[10] to

[13] , in which the magnetic particles contain at least one metal element selected from Ni, Co, and Fe, and have a number average particle size of 20 nm to 50 μm.

[0010] Invention

[16] is a method for manufacturing a structure, comprising the steps of forming a plurality of through holes penetrating a substrate in the thickness direction, filling the through holes with magnetic particles, and forming a transmitting antenna element and a receiving antenna element on the substrate.

[0011] According to the present invention, it is possible to provide a structure and a method for manufacturing the structure in which the antenna gain of the transmitting antenna element is excellent and the influence of the electromagnetic field between the transmitting antenna element and the receiving antenna element is reduced.

[0012] FIG. 1 is a schematic perspective view showing a first example of a structure according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing the first example of a structure according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing the first example of a structure according to an embodiment of the present invention. FIG. 4 is a schematic cross-sectional view showing one step of a method for manufacturing the first example of a structure according to an embodiment of the present invention. FIG. 5 is a schematic cross-sectional view showing one step of a method for manufacturing the first example of a structure according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view showing one step of a method for manufacturing the first example of a structure according to an embodiment of the present invention. FIG. 7 is a schematic cross-sectional view showing a second example of a structure according to an embodiment of the present invention. FIG. 8 is a schematic perspective view showing a third example of a structure according to an embodiment of the present invention. FIG. 9 is a schematic plan view showing the third example of a structure according to an embodiment of the present invention. FIG. 10 is a schematic cross-sectional view showing a modified example of the third example of a structure according to an embodiment of the present invention. FIG. 11 is a schematic perspective view showing a fourth example of a structure according to an embodiment of the present invention. FIG. 12 is a schematic plan view showing the fourth example of a structure according to an embodiment of the present invention. FIG. 13 is a schematic perspective view showing a modified example of the fourth example of a structure according to an embodiment of the present invention. FIG. 14 is a schematic view showing the arrangement positions of a substrate, a transmitting antenna element, and a receiving antenna element. FIG. 15 is a schematic perspective view showing a structure of shape 6. FIG. 16 is a schematic plan view showing a structure of shape 6. 1 is a schematic perspective view showing a structure of Shape 7. FIG. 2 is a schematic plan view showing a structure of Shape 7. FIG. 3 is a schematic perspective view showing a structure of Shape 8.

[0013] The structure of the present invention and the method for manufacturing the structure will be described in detail below based on the preferred embodiment shown in the accompanying drawings. Note that the drawings described below are merely illustrative for explaining the present invention, and the present invention is not limited to the drawings shown below. Furthermore, the drawings described below omit illustration of electrical circuits and wiring around the transmitting antenna element and the receiving antenna element. Furthermore, in the following, "to" indicating a range of values ​​includes the values ​​written on both sides. For example, when ε is a value ε α ~Number ε β That is, the range of ε is the number ε α and the number ε β The range includes ε α ≦ε≦ε βUnless otherwise specified, specific angles, parallelism, and orthogonality include error ranges generally accepted in the relevant technical field. Also, unless otherwise specified, temperatures include error ranges generally accepted in the relevant technical field.

[0014] [First Example of Structure] FIG. 1 is a schematic perspective view showing a first example of a structure according to an embodiment of the present invention. FIG. 2 is a schematic plan view showing a first example of a structure according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view showing a first example of a structure according to an embodiment of the present invention. FIG. 3 is a schematic cross-sectional view taken along line A-A in FIG. 2. The structure 10 includes a substrate 20, and a transmitting antenna element 22 and a receiving antenna element 24 arranged on the front surface 20a side of the substrate 20. The structure 10 includes, within the substrate 20, a plurality of magnetic material portions 26 that extend in the thickness direction Dt of the substrate 20 and are spaced apart from one another. The magnetic material portions 26 are arranged parallel to one another and have the same length in the thickness direction Dt.

[0015] The magnetic material portions 26 are columnar and are provided independently of one another within the substrate 20. Furthermore, as shown in FIG. 2 , when the substrate 20 is viewed from the normal direction of the surface 20 a, the magnetic material portions 26 are provided within the substrate 20 around the transmitting antenna element 22 and the receiving antenna element 24. However, as shown in FIGS. 2 and 3 , the magnetic material portions 26 are not provided below the transmitting antenna element 22 and the receiving antenna element 24. The normal direction is parallel to the thickness direction Dt. For example, as shown in FIG. 2 , the magnetic material portions 26 are arranged in a lattice pattern with interior angles of 90° on the surface 20 a of the substrate 20. Furthermore, the surface 20 a side of the substrate 20 is one surface of the substrate 20, and the back surface 20 b of the substrate 20 is the other surface of the substrate 20. The surface 20 a of the substrate 20 is one surface, and the back surface 20 b of the substrate 20 is the other surface.

[0016] The substrate 20 functions as a support for the structure 10, and has the above-described transmitting antenna element 22 and receiving antenna element 24 disposed thereon. A plurality of magnetic material portions 26 are also disposed within the substrate 20. The substrate 20 is made of, for example, PTFE (polytetrafluoroethylene), polyimide, FR (Flame Retardant)-4, FR-5, CEM-3 (Composite epoxy material-3), or the like.

[0017] The transmitting antenna element 22 is an antenna element that transmits a signal (electromagnetic wave) and has a feed point 22a. The feed point 22a of the transmitting antenna element 22 is electrically connected to a transmitting circuit (not shown), and a high-frequency current is supplied to the feed point 22a. The receiving antenna element 24 is an antenna element that receives the signal (electromagnetic wave) and is electrically connected to a receiving circuit (not shown). The transmitting antenna element 22 and the receiving antenna element 24 will be described in detail later.

[0018] The magnetic material portion 26 shields electromagnetic waves between the transmitting antenna element 22 and the receiving antenna element 24. While the magnetic material portion 26 is a columnar body, its shape is not particularly limited and may be, for example, a circular cylinder or a rectangular prism. In FIGS. 1 and 2 , the magnetic material portion 26 is a cylinder. The cross-sectional shape of the magnetic material portion 26 in a direction perpendicular to the thickness direction Dt, which is the extending direction, is determined by the shape of the opening of the through-hole, which will be described later. If the opening of the through-hole is circular, the magnetic material portion 26 will be a cylinder. For example, if the outer shapes of the transmitting antenna element 22 and the receiving antenna element 24 are rectangular, the diameter of the magnetic material portion 26 is preferably 1 / 3 to 1 / 20 of the length of the shortest side. If the magnetic material portion 26 is a polygonal prism, the diameter of the magnetic material portion 26 is the circle-equivalent diameter of the polygon. The magnetic material portions 26 may be arranged, for example, in a lattice pattern with 90° interior angles or a hexagonal lattice pattern with 60° interior angles, i.e., a honeycomb pattern, with the ratio of the diameter of the magnetic material portions 26 to the distance between the magnetic material portions 26 being within a range of 1:0.2 to 1:3. The spacing between the magnetic material portions 26 is not particularly limited as long as the magnetic material portions 26 are arranged in a position that ensures mechanical strength and does not interfere with adjacent wiring. As will be described later, through holes 25 (see FIG. 4) for forming the magnetic material portions 26 are formed in the substrate 20, and the positions of these through holes 25 are the same as the positions of the magnetic material portions 26. The magnetic material portions 26 will be described in detail later.

[0019] 1 to 3, by providing a plurality of magnetic material portions 26 extending in the thickness direction Dt within the substrate 20 on which the transmitting antenna element 22 and the receiving antenna element 24 are provided on the surface 20a, the influence of electromagnetic waves between the transmitting antenna element 22 and the receiving antenna element 24 is reduced while maintaining the output of the receiving antenna element 24. In other words, the antenna gain of the transmitting antenna element is excellent, and the influence of the electromagnetic field between the transmitting antenna element and the receiving antenna element is reduced.

[0020] (Transmitting Antenna Element and Receiving Antenna Element) The transmitting antenna element 22 and the receiving antenna element 24 can be, for example, various antennas used in the frequency band of 1 GHz to 1000 GHz. The transmitting antenna element 22 has a feed point 22a as described above. The transmitting antenna element 22 and the receiving antenna element 24 can be, for example, a patch antenna, a dipole antenna, or an array antenna. The transmitting antenna element 22 and the receiving antenna element 24 are made of, for example, copper or aluminum. The thickness of the antenna is preferably 20 μm to 50 μm. Note that, for example, when using a printed circuit board such as Flame Retardant Type 1 to Type 5 (FR-1 to FR-5), the thickness of the copper wiring is determined by the standard, and the thickness of the antenna also conforms to the thickness of the copper wiring. The thickness of the antenna may also conform to the thickness of the copper foil of a copper-clad laminate specified in JIS (Japanese Industrial Standards) C 6484: 2005 (see Table 6 of JIS C 6484: 2005, etc.) Furthermore, when the antenna is formed of copper using electrolytic plating, the thickness of the antenna is preferably a film thickness that can be formed by electrolytic plating.

[0021] (Magnetic body portion) When the real part of the complex relative magnetic permeability μ is μ' and the complex part is μ", it is preferable that the μ" of the magnetic body portion 26 is 0.01 to 10 at frequencies of 1 to 40 GHz, and that the μ" is 0.01 to 5 at frequencies above 40 GHz and up to 100 GHz. The magnetic body portion 26 also contains magnetic particles (not shown). The magnetic particles enable the magnetic body portion 26 to exhibit sufficient shielding performance against electromagnetic waves in a frequency band of several tens of GHz. The magnetic particles contain at least one metal element selected from Ni, Co, and Fe, as described below, and preferably have a number average particle diameter of 20 nm to 50 μm.

[0022] The real part μ' and complex part μ" of the complex relative permeability μ of the magnetic material part can be measured as follows. A vector network analyzer (product name: N5225B) manufactured by Keysight and a horn antenna (product names: RH12S23, RH06S10) manufactured by Keycom Corporation are used as the measuring devices. Next, using the free space method, the incident angle is set to 0°, the sweep frequency band is set to 0.025 GHz, and the S parameters are measured every 0.1 GHz with the flat surface of the magnetic material part facing the incident side, to determine the permeability (μ' and μ") from 1 GHz to 40 GHz. The sweep frequency band is changed to determine the permeability (μ' and μ") from above 40 GHz to 100 GHz.

[0023] Magnetic permeability is the rate of change in magnetic flux density (B) that occurs when a magnetic field (H) is applied to a material, and is expressed by the following formula: μ = B / H In the case of magnetic materials, more magnetic flux passes through the material, but non-magnetic materials do not change, so the value is 1. Magnetic permeability is expressed by the following formula: Here, j in the formula represents an imaginary number: μ = μ' (real part) - j × μ" (imaginary part) When the direction of current reverses at high frequencies, such as with electromagnetic waves, the real part indicates the magnetic material's ability to produce higher magnetic flux density, while the imaginary part μ" indicates energy loss. Specifically, the magnetic moment of the crystals in a magnetic material tries to orient itself in the direction of the magnetic field generated by the high frequency, but when the magnetic moment reverses in the opposite direction, a delay in the reversal time or energy loss (which becomes heat) occurs. At high frequencies, the changes in the magnetic moment within a magnetic material cannot keep up with the changes in the electromagnetic field applied from the outside, resulting in significant energy loss. This effect is used to absorb electromagnetic waves.

[0024] The structure 10 is used, for example, in motion sensors and automotive radars. Although not shown, the structure 10 may also be mounted on a substrate together with, for example, an analog / digital (A / D) circuit, a memory, an application-specific integrated circuit (ASIC), and the like. The A / D circuit, memory, and ASIC are composed of, for example, various semiconductor elements. In addition to the above-described configuration, the structure 10 can also be used together with various circuits and elements included in a mobile communication terminal such as a smartphone or a wireless communication module, such as an RF (radio frequency) circuit, a transmitting power amplifier, a receiving low-noise amplifier, an integrated passive element, a switch, or a phase shifter.

[0025] The A / D circuit converts analog signals into digital signals, and a known A / D converter is used. The A / D circuit converts received signals received by the array antenna via radio waves into digital signals. The ASIC obtains the original data or signal transmitted to the array antenna from the digitized received signals. It also generates transmission data or transmission signals in digital signal form. The functions of the ASIC are not particularly limited and are determined appropriately depending on the application, etc. The A / D circuit also converts the transmission data or transmission signals generated by the ASIC into analog signals that can be transmitted by the transmitting antenna elements.

[0026] The memory stores the transmission data or transmission signals generated by the ASIC, the digitalized reception signals received by the array antenna, and the like. The memory may be, for example, a volatile memory such as a dynamic random access memory (DRAM), but preferably a high-bandwidth memory (HBM). The magnetic material portion 26 suppresses electromagnetic interference between the A / D circuit, memory, and ASIC due to electromagnetic waves emitted by the transmitting antenna element. This prevents the A / D circuit, memory, and ASIC from interfering with normal operation and also suppresses malfunctions. The magnetic material portion 26 controls the absorption of electromagnetic waves, thereby enhancing the directivity of the antenna output. Furthermore, incorporating a magnetic material as a structure within the wafer-level package structure enables high integration and high performance of the structure.

[0027] [Manufacturing Method of First Example of Structure] Figures 4 to 6 are schematic cross-sectional views showing the process sequence of a manufacturing method of a first example of a structure according to an embodiment of the present invention. In Figures 4 to 6, the same components as those in Figures 1 to 3 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. As shown in Figure 4, a plurality of through holes 25 are formed in the substrate 20, penetrating the substrate 20 in the thickness direction Dt. The through holes 25 are not formed in the predetermined formation regions of the transmitting antenna element 22 and the receiving antenna element 24 on the surface 20a of the substrate 20. This prevents the formation of magnetic material portions 26 below the transmitting antenna element 22 and the receiving antenna element 24. The method for forming the through holes 25 is not particularly limited, but may be formed using a drill, for example. The through holes 25 are for forming the magnetic material portions 26.

[0028] Next, a composition 27 containing magnetic particles is placed on the surface 20a of the substrate 20 as shown in Fig. 5 using, for example, a spray method, an inkjet method, or a screen printing method. The composition 27 may contain, in addition to the magnetic particles, for example, a dispersant and a curing agent.

[0029] Next, for example, a composition 27 shown in FIG. 5 is sucked into the through-holes 25 from the rear surface 20b of the substrate 20, and the through-holes 25 are filled with magnetic particles. Next, the substrate 20 is heat-treated at a predetermined temperature and time to thermally cure the composition 27 sucked into the through-holes 25, thereby forming magnetic material portions 26 in the substrate 20 as shown in FIG. 6. Next, a copper film (not shown) is formed by, for example, a plating method. Next, photolithography is used on the copper film to form the transmitting antenna element 22 and the receiving antenna element 24 in the predetermined formation regions of the transmitting antenna element 22 and the receiving antenna element 24, respectively, as shown in FIG. 3. Note that, before the through-holes 25 are formed, wiring connected to the transmitting antenna element 22 and the receiving antenna element 24 is formed on the substrate 20.

[0030] [Second Example of Structure] FIG. 7 is a schematic cross-sectional view showing a second example of a structure according to an embodiment of the present invention. In FIG. 7, components identical to those in FIGS. 1 to 3 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. The structure 10a shown in FIG. 7 differs from the structure 10 shown in FIGS. 1 to 3 in that it includes an interposer 28, but otherwise has the same configuration as the structure 10 shown in FIGS. 1 to 3. Note that the magnetic material portion 26 provided on the substrate 20 is not shown in the structure 10a shown in FIG. 7. Furthermore, wiring 37 electrically connected to the transmitting antenna element 22 is provided within the substrate 20. Furthermore, wiring 38 electrically connected to the receiving antenna element 24 is provided within the substrate 20. The structure 10a shown in FIG. 7 includes an interposer 28 stacked on the substrate 20. More specifically, the structure 10a includes the interposer 28 stacked on the back surface 20b of the substrate 20. The interposer 28 electrically connects, for example, the structure 10 and the circuit board 29, and has, for example, a wiring layer 40 provided therein and is conductive in the thickness direction Dt. A wiring 37 electrically connected to the transmitting antenna element 22 is electrically connected to the wiring layer 40. A wiring 38 electrically connected to the receiving antenna element 24 is electrically connected to the wiring layer 40.

[0031] The interposer 28 also functions as an electromagnetic wave shielding member. The interposer 28 has a plurality of magnetic material portions 26 formed thereon, extending in the thickness direction Dt and spaced apart from one another. The interposer 28 is made of silicon or glass. The interposer 28 has a plurality of connection terminals 42 formed on its back surface 28b. The circuit board 29 has a connection terminal 29c formed on its front surface 29a. The connection terminals 42 of the interposer 28 and the connection terminals 29c of the circuit board 29 are electrically connected by, for example, solder balls 44. This electrically connects the interposer 28 and the circuit board 29. An underfill layer 45 is also formed between the back surface 28b of the interposer 28 and the front surface 29a of the circuit board 29. The underfill layer 45 surrounds the periphery of the solder balls 44. The underfill layer 45 firmly connects the interposer 28 and the circuit board 29. The circuit board 29 is formed with, for example, electronic circuits and wiring that perform specific functions, but the configuration is not particularly limited. Various semiconductor elements may be provided on the circuit board 29. As shown in Figure 7, the structure 10a, like the structure 10 described above, has the antenna gain of the transmitting antenna element 22 and the effect of reducing the effect of the electromagnetic field between the transmitting antenna element 22 and the receiving antenna element 24, and in addition, can reduce the effect of the electromagnetic field on the circuit board 29.

[0032] [Third Example of Structure] FIG. 8 is a schematic perspective view showing a third example of a structure according to an embodiment of the present invention. FIG. 9 is a schematic plan view showing a third example of a structure according to an embodiment of the present invention. FIG. 10 is a schematic cross-sectional view showing a third example of a structure according to an embodiment of the present invention. In FIGS. 8 to 10, the same components as those in FIGS. 1 to 3 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. The structure 10b shown in FIG. 8 differs from the structure 10 shown in FIGS. 1 to 3 in the configuration of the magnetic material portion, but is otherwise similar to the structure 10 shown in FIGS. 1 to 3. The configuration of this structure 10b can also achieve the same effects as the structure 10 shown in FIG. 1. The structure 10b has a substrate 20 and a transmitting antenna element 22 and a receiving antenna element 24 arranged on the front surface 20a side of the substrate 20.

[0033] As shown in FIGS. 8 to 10 , the substrate 20 has a magnetic wall portion 30 disposed on the front surface 20a side thereof, surrounding the transmitting antenna element 22 and the receiving antenna element 24, except for the gap 20c between the transmitting antenna element 22 and the receiving antenna element 24. Furthermore, the substrate 20 has a magnetic portion 32 disposed so as to cover the entire rear surface 20b side of the substrate 20. The substrate 20 has a rectangular outer shape, and the magnetic wall portion 30 is disposed along the outer periphery of the substrate 20, and is not disposed in the gap 20c between the transmitting antenna element 22 and the receiving antenna element 24. When the substrate 20 is viewed from the normal direction of the front surface 20a, the magnetic wall portion 30 is disposed in the shape of a rectangular frame. In FIG. 8 , the magnetic portion 32 is disposed over the entire rear surface 20b of the substrate 20. The magnetic wall portion 30 and the magnetic portion 32 are, for example, integrally configured, and a recess is formed by providing the magnetic wall portion 30 on the outer edge of the surface 32a of the magnetic portion 32 as a bottom surface. The substrate 20 is disposed with its back surface 20b facing the bottom surface of the recess.

[0034] Although the structure 10b has a configuration in which the magnetic material portion 32 is provided over the entire back surface 20b of the substrate 20, the present invention is not limited to this. For example, as in the structure 10c shown in Fig. 11, the magnetic material portion 32 may have an empty region 32c corresponding to the formation region of the transmitting antenna element 22 and the formation region of the receiving antenna element 24. This configuration of the structure 10c can also achieve the same effect as the structure 10 shown in Fig. 1. The magnetic material wall portion 30 and the magnetic material portion 32 have the same configuration as the magnetic material portion 26 described above.

[0035] The surface 32a of the magnetic material portion 32 is the bottom surface, and a magnetic wall portion 30 is provided on the outer edge of the surface 32a of the magnetic material portion 32 to form a recess. For example, the magnetic material portion 32 is formed by a pattern printing method, and a rectangular frame-shaped magnetic wall portion 30 is formed on the outer edge of the magnetic material portion 32 using the pattern printing method. A substrate 20 is also prepared, with a transmitting antenna element 22 and a receiving antenna element 24 formed on the surface 20a. In this case, the substrate 20 does not have a magnetic material portion formed on it. Next, the substrate 20 is placed with its back surface 20b facing the bottom surface of the recess, i.e., the surface 32a of the magnetic material portion 32. The substrate 20 is then bonded and fixed to the surface 32a of the magnetic material portion 32 using, for example, a thermosetting or photocurable adhesive. This allows the structure 10b to be obtained. The structure 10c can be manufactured in the same manner as the structure 10c, except that the configuration of the magnetic material portion 32 is different.

[0036] [Fourth Example of Structure] FIG. 12 is a schematic perspective view showing a fourth example of a structure according to an embodiment of the present invention. FIG. 13 is a schematic plan view showing a fourth example of a structure according to an embodiment of the present invention. FIG. 14 is a schematic perspective view showing a modified example of the fourth example of a structure according to an embodiment of the present invention. In FIGS. 12 to 14, the same components as those in FIGS. 1 to 3 are designated by the same reference numerals, and detailed descriptions thereof will be omitted. The structure 10d shown in FIG. 12 differs from the structure 10 shown in FIGS. 1 to 3 in the configuration of the magnetic material portion, but is otherwise similar to the structure 10 shown in FIGS. 1 to 3. The configuration of this structure 10a can also achieve the same effects as the structure 10 shown in FIG. 1. The structure 10d includes a substrate 20, a transmitting antenna element 22 and a receiving antenna element 24 arranged on the front surface 20a of the substrate 20, and a magnetic layer 34 arranged on the substrate 20.

[0037] When the substrate 20 is viewed from the normal direction of the surface 20a, the magnetic material layer 34 includes a first magnetic material portion 34a disposed between the transmitting antenna element 22 and the receiving antenna element 24, a second magnetic material portion 34b disposed so as to sandwich the first magnetic material portion 34a and the transmitting antenna element 22, a third magnetic material portion 34c disposed so as to sandwich the first magnetic material portion 34a and the receiving antenna element 24, and a fourth magnetic material portion 34d connecting the first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c. The fourth magnetic material portion 34d is disposed so as to avoid the area where the transmitting antenna element 22 and the receiving antenna element 24 are provided. The fourth magnetic material portion 34d connects the first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c in areas other than the area where the transmitting antenna element 22 and the receiving antenna element 24 are provided.

[0038] More specifically, as shown in Figures 12 and 13, in the magnetic layer 34, the first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c are linear members extending in one direction Dx. The fourth magnetic material portion 34d is a linear member extending in another direction Dy perpendicular to the one direction Dx. The first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c are spaced apart from each other and arranged parallel to each other. A gap 35a is present between the first magnetic material portion 34a and the second magnetic material portion 34b. A gap 35b is present between the first magnetic material portion 34a and the third magnetic material portion 34c. The fourth magnetic material portion 34d connects the first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c at ends 34e of the first magnetic material portion 34a, the second magnetic material portion 34b, and the third magnetic material portion 34c in the one direction Dx. The first magnetic material portion 34a, the second magnetic material portion 34b, the third magnetic material portion 34c, and the fourth magnetic material portion 34d that constitute the magnetic material layer 34 have the same thickness in the thickness direction Dt. The thickness direction Dt, the one direction Dx, and the other direction Dy are perpendicular to one another.

[0039] 12 and 13 , in the magnetic material layer 34, the transmitting antenna element 22 is disposed in a gap 35a between the first magnetic material portion 34a and the second magnetic material portion 34b, and the gap 35a leaves an opening above the transmitting antenna element 22. The receiving antenna element 24 is disposed in a gap 35b between the first magnetic material portion 34a and the third magnetic material portion 34c, and the gap 35b leaves an opening above the receiving antenna element 24.

[0040] In the structure 10d, the transmitting antenna element 22, the receiving antenna element 24, and the magnetic layer 34 are arranged on the front surface 20a of the substrate 20. Note that the arrangement of the magnetic layer 34 is not limited to the configuration shown in FIG. 12 . For example, as in the structure 10e shown in FIG. 14 , the transmitting antenna element 22 and the receiving antenna element 24 may be arranged on the front surface 20a of the substrate, and the magnetic layer 34 may be arranged on the back surface 20b of the substrate 20. The structure 10e is configured such that the magnetic layer 34 is arranged on the back surface 20b of the substrate 20, and nothing is arranged on the front surface 20a of the substrate. Furthermore, on the back surface 20b of the substrate 20, a gap 35a between the first magnetic material portion 34a and the second magnetic material portion 34b is located in a region corresponding to the formation region of the transmitting antenna element 22. A gap 35b between the first magnetic material portion 34a and the third magnetic material portion 34c is located in a region corresponding to the formation region of the receiving antenna element 24. The magnetic layer 34 is preferably provided on the rear surface 20b side of the substrate 20 as in the structure 10e rather than the structure 10d, because the far-field gain is superior and the antenna gain of the transmitting antenna element is also superior.

[0041] To fabricate the structure 10d shown in FIG. 12, first prepare a substrate 20 having a transmitting antenna element 22 and a receiving antenna element 24 formed on its front surface 20a. In this case, no magnetic material portion is formed on the substrate 20. Next, the magnetic material layer 34 shown in FIG. 12 is formed on the front surface 20a of the substrate 20 by spraying using a mask or by screen printing. This allows the structure 10d to be obtained. The structure 10e can be fabricated in the same manner as the structure 10d, except that the magnetic material layer 34 is formed on the rear surface 20b of the substrate 20.

[0042] <Other Configurations> Examples of the semiconductor element include the following. The semiconductor element is not particularly limited, and examples thereof include logic LSIs (Large Scale Integration), ASICs (Application Specific Integrated Circuits), FPGAs (Field Programmable Gate Arrays), ASSPs (Application Specific Standard Products), microprocessors (e.g., CPUs (Central Processing Units), GPUs (Graphics Processing Units)), memories (e.g., DRAMs (Dynamic Random Access Memory), HMCs (Hybrid Memory Cubes)), MRAMs (Magnetic RAMs), PCMs (Phase-Change Memory), ReRAMs (Resistive RAMs), FeRAMs (Ferroelectric RAMs), flash memories (NAND (Not AND) flash), power devices, analog ICs (Integrated Circuits), DC (Direct Current)-DC (Direct Current) converters, insulated gate bipolar transistors (IGBTs), A / D converters, and MEMS (Micro Electro Mechanical Systems) such as acceleration sensors, pressure sensors, vibrators, and gyro sensors. Systems), power amplifiers, wireless (e.g., GPS (Global Positioning System), FM (Frequency Modulation)), NFC (Nearfield communication), RFEM (RF Expansion Module), MMIC (Monolithic Microwave Integrated Circuit), WLAN (Wireless Local Area Network)), discrete elements, BSI (Back Side Illumination), CIS (Contact Image Sensor), camera modules, CMOS (ComplementaryExamples of such devices include RF (Radio Frequency Integrated Passive Devices), RF (Radio Frequency Integrated Passive Devices), RF (Radio Frequency Integrated Passive Devices), and BB (Broadband).

[0043] An array antenna, for example, has multiple antennas. For example, the multiple antennas are all the same antenna. The configuration of the antennas that make up the array antenna is not particularly limited and is determined appropriately depending on the frequency band to be transmitted or received, the direction of polarization to be received, etc. The number of antennas in the array antenna is not particularly limited and is determined appropriately depending on the space, application, etc.

[0044] The various components contained in the composition containing magnetic particles are described in detail below. [Magnetic Particles] The magnetic particles may be of one type or multiple types. The magnetic particles contain metal atoms. In this specification, the metal atoms also include metalloid atoms such as boron, silicon, germanium, arsenic, antimony, and tellurium. The metal atoms may be contained in the magnetic particles as an alloy containing a metal element (preferably a magnetic alloy), a metal oxide (preferably a magnetic oxide), a metal nitride (preferably a magnetic oxide), or a metal carbide (preferably a magnetic carbide). The content of the metal atoms relative to the total mass of the magnetic particles is preferably 50 to 100% by mass, more preferably 75 to 100% by mass, and even more preferably 95 to 100% by mass.

[0045] The metal atoms are not particularly limited, but preferably contain at least one metal atom selected from the group consisting of Fe, Ni, and Co. The content of at least one metal atom selected from the group consisting of Fe, Ni, and Co (when multiple types are included, the total content) is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more, based on the total mass of metal atoms in the magnetic particles. The upper limit of the content is not particularly limited, and is, for example, 100% by mass or less, preferably 98% by mass or less, and more preferably 95% by mass or less.

[0046] The magnetic particles may contain materials other than Fe, Ni, and Co, and specific examples thereof include Al, Si, S, Sc, Ti, V, Cu, Y, Mo, Rh, Pd, Ag, Sn, Sb, Te, Ba, Ta, W, Re, Au, Bi, La, Ce, Pr, Nd, P, Zn, Zr, Mn, Cr, Nb, Pb, Ca, B, C, N, and O. When the magnetic particles contain metal atoms other than Fe, Ni, and Co, they preferably contain one or more selected from the group consisting of Si, Cr, B, and Mo.

[0047] Examples of magnetic particles include Fe—Co alloys (preferably permendur), Fe—Ni alloys (e.g., permalloy), Fe—Zr alloys, Fe—Mn alloys, Fe—Si alloys, Fe—Al alloys, Ni—Mo alloys (preferably supermalloy), Fe—Ni—Co alloys, Fe—Si—Cr alloys, Fe—Si—B alloys, Fe—Si—Al alloys (preferably sendust), Fe—Si—B—C alloys, Fe—Si— Examples of suitable alloys include B-Cr alloys, Fe-Si-B-Cr-C alloys, Fe-Co-Si-B alloys, Fe-Si-B-Nb alloys, Fe nanocrystalline alloys, Fe-based amorphous alloys, and Co-based amorphous alloys, as well as ferrites such as spinel ferrites (preferably Ni-Zn ferrites and Mn-Zn ferrites) and hexagonal ferrites (preferably barium ferrite and magnetoplumbite-type hexagonal ferrite). The alloys may be amorphous. A preferred hexagonal ferrite from the viewpoint of radio wave absorption performance is a substitutional magnetoplumbite-type hexagonal ferrite in which some of the iron atoms of the hexagonal ferrite are substituted with aluminum atoms. Furthermore, Ba-Fe-Al alloys, Ca-Fe-Al alloys, and Pb-Fe-Al alloys in which some of the alloys are substituted with Ba, Ca, or Pb are more preferred from the viewpoint of radio wave absorption in the high frequency band. The magnetic particles may be used alone or in combination of two or more types.

[0048] The magnetic particles may have a surface layer formed on their surfaces. By providing the magnetic particles with a surface layer, the magnetic particles can be endowed with a function according to the material of the surface layer. Examples of the surface layer include an inorganic layer and an organic layer.

[0049] The thickness of the surface layer is not particularly limited, but is preferably 3 to 1000 nm in order to allow the surface layer to exhibit its functions more effectively.

[0050] The number-average particle diameter of the magnetic particles is preferably 20 nm to 50 μm. From the viewpoints of dispersion in the composition and pattern resolution, the number-average particle diameter of the magnetic particles is more preferably 20 to 1,000 nm, and even more preferably 20 to 500 nm. The number-average particle diameter of the magnetic particles is measured by photographing the magnetic particles using a transmission electron microscope at a magnification of 100,000x and printing the photograph on photographic paper at a total magnification of 500,000x. The outline of the particles (primary particles) is then traced using a digitizer, and the diameter of a circle with the same area as the traced area (circular area diameter) is calculated. Here, primary particles refer to independent particles without agglomeration. Photography using a transmission electron microscope is performed by the direct method using a transmission electron microscope at an accelerating voltage of 300 kV. Transmission electron microscope observation and measurement can be performed using, for example, a transmission electron microscope H-9000 model manufactured by Hitachi, Ltd. and image analysis software KS-400 manufactured by Carl Zeiss K.K. The particle diameters of the primary particles of at least 100 magnetic particles measured above are arithmetically averaged to calculate the number average particle diameter.

[0051] The particle size of the magnetic particles may also be a volume average particle size. The volume average particle size is not particularly limited and is often 1 to 60 μm. From the viewpoint of achieving superior effects of the present invention, a value of 5 to 55 μm is preferred, and a value of 10 to 50 μm is more preferred. The volume average particle size of the magnetic particles is the so-called median diameter (D50), and can be determined based on a particle size distribution curve that represents the volume-based frequency distribution of the magnetic particles, obtained using a laser diffraction / scattering particle size distribution analyzer (for example, the "LA960N" product manufactured by Horiba, Ltd.).

[0052] The shape of the magnetic particles is not particularly limited, and may be any of plate-like, elliptical, spherical, and irregular shapes.

[0053] The content of the magnetic particles is preferably 20 to 99% by mass, more preferably 25 to 80% by mass, and even more preferably 30 to 70% by mass, relative to the total mass of the composition. The content of the magnetic particles is preferably 30 to 99% by mass, more preferably 30 to 80% by mass, and even more preferably 40 to 70% by mass, relative to the total solid content of the composition. The total solid content of the composition refers to the components that make up the magnetic part, excluding the solvent in the composition. Any component that makes up the magnetic part is considered to be a solid, even if it is in a liquid state.

[0054] [Polymerizable Compound] The photosensitive composition may contain a polymerizable compound. The polymerizable compound is a compound having a polymerizable group (thermally polymerizable compound or photopolymerizable compound), such as a compound having an ethylenically unsaturated bond-containing group (hereinafter simply referred to as "ethylenically unsaturated group") and a compound having an epoxy group and / or an oxetanyl group. The composition preferably contains a compound having an epoxy group and / or an oxetanyl group as the polymerizable compound. Among these, a polyfunctional epoxy compound (a compound having multiple epoxy groups) is preferred. The polymerizable compound preferably contains one or more groups selected from the group consisting of epoxy groups and oxetanyl groups, more preferably two or more groups. The upper limit is, for example, 15 or less.

[0055] Examples of polyfunctional epoxy compounds include bisphenol A type epoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, alicyclic epoxy resins, and aliphatic polyglycidyl ethers. Examples of polyfunctional epoxy compounds include Epolead (registered trademark) GT401, Epolead PB3600, Epolead PB4700, Celloxide (registered trademark) 2021, Celloxide 3000, and EHPE3150 (all manufactured by Daicel Corporation); jER1001, jER1002, jER1003, jER1004, jER1007, jER1009, jER1010, jER828, jER871, jER872, jER180S75, jER807, jER890, jER152, and jER154 (all manufactured by Mitsubishi Chemical Corporation); EPPN201, EPPN202, EOCN-102, and EOCN-103. S, EOCN-104S, EOCN-1020, EOCN-1025, EOCN-1027 (all manufactured by Nippon Kayaku Co., Ltd.); Epicron (registered trademark) 200, Epicron 400 (all manufactured by DIC Corporation); Denacol (registered trademark) EX-611, Denacol EX-612, Denacol EX-614, Denacol EX-622, Denacol EX-411, Denacol EX-512, Denacol EX-522, Denacol EX-421, Denacol EX-313, Denacol EX-314, Denacol EX-321 (all manufactured by Nagase ChemteX Corporation); TEPIC-S (manufactured by Nissan Chemical Industries, Ltd.).

[0056] The content of the polymerizable compound in the composition is not particularly limited, but is preferably from 1 to 40% by mass, more preferably from 5 to 30% by mass, based on the total solid content of the composition.

[0057] The composition may contain materials other than the magnetic particles and polymerizable compound described above.

[0058] [Resin] The composition may contain a resin. Examples of the resin include (meth)acrylic resin, epoxy resin, ene-thiol resin, polycarbonate resin, polyether resin, polyarylate resin, polysulfone resin, polyethersulfone resin, polyphenylene resin, polyarylene ether phosphine oxide resin, polyimide resin, polyamideimide resin, polyolefin resin, cyclic olefin resin, polyester resin, styrene resin, and phenoxy resin. One of these resins may be used alone, or two or more may be used in combination.

[0059] One preferred embodiment of the resin is a resin having an unsaturated double bond (e.g., an ethylenically unsaturated double bond) and a polymerizable group such as an epoxy group or an oxetanyl group. Another preferred embodiment of the resin is a resin having an acid group, a basic group, or an amide group. Resins having an acid group, a basic group, or an amide group are likely to function as a dispersant for dispersing magnetic particles. Examples of the acid group include a carboxy group, a phosphate group, a sulfo group, and a phenolic hydroxyl group, with a carboxy group being preferred. Examples of the basic group include an amino group (a group in which one hydrogen atom has been removed from ammonia, a primary amine, or a secondary amine) and an imino group. Of these, it is preferred that the resin have a carboxy group or an amide group.

[0060] When the resin has an acid group, the acid value of the resin is preferably from 10 to 500 mgKOH / g, more preferably from 30 to 400 mgKOH / g.

[0061] As the resin, it is preferable to use a resin having a solubility in the solvent of 10 g / L or more, and more preferably a resin having a solubility in the solvent of 20 g / L or more, so that the dispersibility of the resin in the composition is improved. The upper limit of the solubility of the resin in the solvent is preferably 2000 g / L or less, and more preferably 1000 g / L or less. The solubility of the resin in the solvent means the amount (g) of the resin dissolved in 1 L of the solvent at 25°C.

[0062] The content of the resin is preferably from 0.1 to 30% by mass, more preferably from 0.2 to 10% by mass, based on the total mass of the composition.

[0063] One preferred embodiment of the resin is a resin that functions as a dispersant for dispersing magnetic particles in the composition (hereinafter also referred to as a "dispersing resin"). Use of a dispersing resin makes the effects of the present invention more excellent.

[0064] [Resin Having Repeating Units Including Graft Chains] Examples of dispersing resins include resins having repeating units including graft chains (hereinafter also referred to as "resin A"). However, resin A can be used for purposes other than functioning as a dispersant.

[0065] When the composition contains resin A, the content of resin A is preferably 0.1 to 30 mass %, more preferably 0.2 to 20 mass %, relative to the total mass of the composition, in terms of better effects of the present invention.

[0066] Repeating units containing graft chains In repeating units containing graft chains, as the graft chains become longer, the steric repulsion effect increases, improving the dispersibility of magnetic particles. On the other hand, if the graft chains are too long, the adhesive force to the magnetic particles decreases, tending to reduce the dispersibility of the magnetic particles. For this reason, the graft chain preferably has 40 to 10,000 atoms excluding hydrogen atoms, more preferably 50 to 2,000 atoms excluding hydrogen atoms, and even more preferably 60 to 500 atoms excluding hydrogen atoms. Here, the graft chain refers to the length from the base of the main chain (the atom that bonds to the main chain in the group branching from the main chain) to the end of the group branching from the main chain.

[0067] Furthermore, the graft chain preferably contains a polymer structure, and examples of such polymer structures include a poly(meth)acrylate structure (e.g., a poly(meth)acrylic structure), a polyester structure, a polyurethane structure, a polyurea structure, a polyamide structure, and a polyether structure. In order to improve the interaction between the graft chain and the solvent and thereby enhance the dispersibility of the magnetic particles, the graft chain is preferably a graft chain containing at least one structure selected from the group consisting of a polyester structure, a polyether structure, and a poly(meth)acrylate structure, and more preferably a graft chain containing at least one of a polyester structure and a polyether structure.

[0068] Resin A may be a resin obtained using a macromonomer having a graft chain (a monomer having a polymer structure and bonding to a main chain to form a graft chain). The macromonomer having a graft chain (a monomer having a polymer structure and bonding to a main chain to form a graft chain) is not particularly limited, but a macromonomer having a reactive double bond group can be suitably used.

[0069] Resin A preferably contains at least one structure selected from the group consisting of polymethyl acrylate, polymethyl methacrylate, and cyclic or linear polyesters, more preferably at least one structure selected from the group consisting of polymethyl acrylate, polymethyl methacrylate, and linear polyesters, and even more preferably at least one structure selected from the group consisting of a polymethyl acrylate structure, a polymethyl methacrylate structure, a polycaprolactone structure, and a polyvalerolactone structure. Resin A may contain one of the above structures alone, or may contain a plurality of these structures. Here, the polycaprolactone structure refers to a structure containing a ring-opened ε-caprolactone structure as a repeating unit. The polyvalerolactone structure refers to a structure containing a ring-opened δ-valerolactone structure as a repeating unit.

[0070] In Resin A, the content of the repeating unit containing a graft chain is, in mass terms, preferably 2 to 100 mass%, more preferably 2 to 90 mass%, and even more preferably 5 to 30 mass%, relative to the total mass of Resin A. When the repeating unit containing a graft chain is contained within this range, the effects of the present invention are more excellent.

[0071] Hydrophobic Repeating Unit Resin A may also contain a hydrophobic repeating unit different from a repeating unit containing a graft chain (i.e., not corresponding to a repeating unit containing a graft chain). In this specification, however, a hydrophobic repeating unit is a repeating unit that does not contain an acid group (e.g., a carboxylic acid group, a sulfonic acid group, a phosphoric acid group, a phenolic hydroxyl group, etc.).

[0072] The hydrophobic repeating unit is preferably a repeating unit derived from (corresponding to) a compound (monomer) having a ClogP value of 1.2 or more, and more preferably a repeating unit derived from a compound having a ClogP value of 1.2 to 8. This allows the effects of the present invention to be more reliably exhibited.

[0073] The ClogP values ​​are values ​​calculated using the program "CLOGP" available from Daylight Chemical Information System, Inc. This program provides "calculated logP" values ​​calculated using the fragment approach of Hansch and Leo (see the reference below). The fragment approach is based on the chemical structure of a compound, dividing the chemical structure into substructures (fragments), and estimating the logP value of the compound by summing up the logP contributions assigned to the fragments. Details are described in the following reference. In this specification, the ClogP values ​​calculated using the program CLOGP v4.82 are used. A. J. Leo, Comprehensive Medicinal Chemistry, Vol. 4, C. Hansch, P. G. Sammonens, J. B. Taylor and C. A. Ramsden, Eds. , p. 295, Pergamon Press, 1990 C. Hansch &A. J. Leo. Substituent Constants For Correlation Analysis in Chemistry and Biology. John Wiley & Sons. A. J. Leo. Calculating logPoct from structure. Chem. Rev. , 93, 1281-1306, 1993.

[0074] Log P refers to the common logarithm of the partition coefficient P, and is a physical property that quantitatively represents how an organic compound is distributed in equilibrium between a two-phase system of oil (generally 1-octanol) and water, and is expressed by the following formula: log P = log (Coil / Cwater) In the formula, Coil represents the molar concentration of the compound in the oil phase, and Cwater represents the molar concentration of the compound in the water phase. As the log P value increases toward the positive side, including 0, the oil solubility increases, and as the absolute value increases toward the negative side, the water solubility increases; there is a negative correlation with the water solubility of organic compounds, and log P is widely used as a parameter for estimating the hydrophilicity or hydrophobicity of organic compounds.

[0075] In the resin A, the content of the hydrophobic repeating unit is preferably from 5 to 90% by mass, more preferably from 20 to 80% by mass, based on the total mass of the resin A, in terms of mass.

[0076] Functional group capable of forming an interaction with magnetic particles The resin A may have a functional group capable of forming an interaction with the magnetic particles. It is preferable that the resin A further contains a repeating unit containing a functional group capable of forming an interaction with the magnetic particles. Examples of functional groups capable of forming an interaction with the magnetic particles include acid groups, basic groups, coordinating groups, and reactive functional groups. When the resin A contains an acid group, a basic group, a coordinating group, or a reactive functional group, it is preferable that the resin A contains a repeating unit containing an acid group, a repeating unit containing a basic group, a repeating unit containing a coordinating group, or a repeating unit having a reactive functional group, respectively.

[0077] The repeating unit containing an alkali-soluble group as an acid group may be the same as or different from the repeating unit containing the graft chain described above, but the repeating unit containing an alkali-soluble group as an acid group is a repeating unit different from the hydrophobic repeating unit described above (i.e., it does not correspond to the hydrophobic repeating unit described above).

[0078] Examples of acid groups, which are functional groups capable of interacting with magnetic particles, include carboxylic acid groups, sulfonic acid groups, phosphoric acid groups, and phenolic hydroxyl groups. At least one of carboxylic acid groups, sulfonic acid groups, and phosphoric acid groups is preferred, with carboxylic acid groups being more preferred. Carboxylic acid groups have good adsorption to magnetic particles and high dispersibility. In other words, it is preferable that resin A further contains a repeating unit containing at least one of carboxylic acid groups, sulfonic acid groups, and phosphoric acid groups.

[0079] Resin A may have one or more types of repeating units containing an acid group. When Resin A contains a repeating unit containing an acid group, the content thereof, in mass conversion, is preferably 5 to 80 mass % and more preferably 10 to 60 mass % relative to the total mass of Resin A.

[0080] Examples of basic groups, which are functional groups capable of forming interactions with magnetic particles, include primary amino groups, secondary amino groups, tertiary amino groups, heterocycles containing N atoms, and amide groups. A preferred basic group is a tertiary amino group because of its good adsorption to magnetic particles and high dispersibility. Resin A may contain one or more of these basic groups. When Resin A contains a repeating unit containing a basic group, the content thereof, in mass terms, is preferably 0.01 to 50% by mass, more preferably 0.01 to 30% by mass, relative to the total mass of Resin A.

[0081] Examples of coordinating groups, which are functional groups capable of forming interactions with magnetic particles, and reactive functional groups include acetylacetoxy groups, trialkoxysilyl groups, isocyanate groups, acid anhydrides, and acid chlorides. A preferred functional group is the acetylacetoxy group, as it has good adsorption to magnetic particles and high dispersibility of magnetic particles. Resin A may contain one or more of these groups. When resin A contains a repeating unit containing a coordinating group or a repeating unit containing a reactive functional group, the content of these groups, in mass terms, is preferably 10 to 80% by mass, more preferably 20 to 60% by mass, of the total mass of resin A.

[0082] Ethylenically Unsaturated Group Resin A may contain an ethylenically unsaturated group. The ethylenically unsaturated group is not particularly limited, but examples include (meth)acryloyl, vinyl, and styryl groups, with (meth)acryloyl being preferred. Resin A preferably contains a repeating unit containing an ethylenically unsaturated group in the side chain, and more preferably a repeating unit containing an ethylenically unsaturated group in the side chain and derived from a (meth)acrylate (hereinafter also referred to as a "(meth)acrylic repeating unit containing an ethylenically unsaturated group in the side chain"). A (meth)acrylic repeating unit containing an ethylenically unsaturated group in the side chain can be obtained, for example, by subjecting a carboxylic acid group in Resin A containing a (meth)acrylic repeating unit containing a carboxylic acid group to an addition reaction with an ethylenically unsaturated compound containing a glycidyl group or an alicyclic epoxy group. By reacting the ethylenically unsaturated group (glycidyl group or alicyclic epoxy group) introduced in this manner, a (meth)acrylic repeating unit containing an ethylenically unsaturated group in the side chain can be obtained.

[0083] When the resin A contains a repeating unit containing an ethylenically unsaturated group, the content thereof is preferably 10 to 80 mass %, more preferably 15 to 40 mass %, based on the total mass of the resin A, in mass terms.

[0084] Other Repeating Units Furthermore, for the purpose of improving various performances such as film-forming ability, Resin A may further contain other repeating units having various functions different from the repeating units containing graft chains, hydrophobic repeating units, and repeating units containing functional groups capable of forming interactions with magnetic particles, as long as the effects of the present invention are not impaired. Examples of such other repeating units include repeating units derived from radically polymerizable compounds selected from acrylonitriles and methacrylonitriles. Resin A can use one or more of these other repeating units, and the content thereof, in mass terms, is preferably 0 to 80% by mass, more preferably 10 to 60% by mass, relative to the total mass of Resin A.

[0085] Physical Properties of Resin A The acid value of Resin A is not particularly limited, but is, for example, preferably 0 to 400 mgKOH / g, more preferably 10 to 350 mgKOH / g, even more preferably 30 to 300 mgKOH / g, and particularly preferably 50 to 200 mgKOH / g. If the acid value of Resin A is 50 mgKOH / g or more, the sedimentation stability of the magnetic particles can be further improved.

[0086] In this specification, the acid value can be calculated, for example, from the average content of acid groups in the compound. Furthermore, a resin having a desired acid value can be obtained by changing the content of repeating units containing acid groups in the resin.

[0087] The weight average molecular weight of resin A is not particularly limited, but is, for example, preferably 3,000 or more, more preferably 4,000 or more, even more preferably 5,000 or more, and particularly preferably 6,000 or more. The upper limit is, for example, preferably 300,000 or less, more preferably 200,000 or less, even more preferably 100,000 or less, and particularly preferably 50,000 or less. Resin A can be synthesized based on a known method.

[0088] <Alkali-Soluble Resin> The resin may contain an alkali-soluble resin. In this specification, the alkali-soluble resin refers to a resin containing a group that promotes alkali solubility (an alkali-soluble group, for example, an acid group such as a carboxylic acid group), and refers to a resin different from the resin A already described.

[0089] Examples of alkali-soluble resins include resins containing at least one alkali-soluble group in the molecule, such as polyhydroxystyrene resins, polysiloxane resins, (meth)acrylic resins, (meth)acrylamide resins, (meth)acrylic / (meth)acrylamide copolymers, epoxy resins, and polyimide resins.

[0090] Specific examples of alkali-soluble resins include copolymers of unsaturated carboxylic acids and ethylenically unsaturated compounds. The unsaturated carboxylic acids are not particularly limited, but include monocarboxylic acids such as (meth)acrylic acid, crotonic acid, and vinylacetic acid; dicarboxylic acids such as itaconic acid, maleic acid, and fumaric acid, or acid anhydrides thereof; and polycarboxylic acid monoesters such as mono(2-(meth)acryloyloxyethyl)phthalate.

[0091] Examples of copolymerizable ethylenically unsaturated compounds include methyl (meth)acrylate, etc. Compounds described in paragraph 0027 of JP-A No. 2010-097210 and paragraphs 0036 to 0037 of JP-A No. 2015-068893 can also be used, the contents of which are incorporated herein by reference.

[0092] Furthermore, a copolymerizable ethylenically unsaturated compound containing an ethylenically unsaturated group in a side chain may be used in combination. That is, the alkali-soluble resin may contain a repeating unit containing an ethylenically unsaturated group in a side chain. The ethylenically unsaturated group contained in the side chain is preferably a (meth)acrylic acid group. The repeating unit containing an ethylenically unsaturated group in a side chain can be obtained, for example, by subjecting the carboxylic acid group of a (meth)acrylic repeating unit containing a carboxylic acid group to an addition reaction with an ethylenically unsaturated compound containing a glycidyl group or an alicyclic epoxy group.

[0093] As the alkali-soluble resin, an alkali-soluble resin containing a curable group is also preferred. Examples of the curable group include, but are not limited to, ethylenically unsaturated groups (e.g., (meth)acryloyl group, vinyl group, styryl group, etc.) and cyclic ether groups (e.g., epoxy group, oxetanyl group, etc.). Among them, in terms of being able to control polymerization by radical reaction, an ethylenically unsaturated group is preferred as the curable group, and a (meth)acryloyl group is more preferred. As the alkali-soluble resin containing a curable group, an alkali-soluble resin having a curable group on a side chain is preferred. Examples of alkali-soluble resins containing a curable group include the Dianal (registered trademark) NR series (manufactured by Mitsubishi Chemical Corporation), Photomer 6173 (COOH-containing polyurethane acrylic oligomer, manufactured by Diamond Shamrock Co., Ltd.), Viscoat R-264, KS Resist 106 (all manufactured by Osaka Organic Chemical Industry Ltd.), Cyclomer P series (e.g., ACA230AA), Plaxel CF200 series (all manufactured by Daicel Corporation), Ebecryl 3800 (manufactured by Daicel Allnex Corporation), and Acrycure RD-F8 (manufactured by Nippon Shokubai Co., Ltd.).

[0094] The alkali-soluble resin may also be a polyimide precursor, which refers to a resin obtained by subjecting a compound containing an acid anhydride group and a diamine compound to an addition polymerization reaction at 40 to 100°C.

[0095] The acid value of the alkali-soluble resin is not particularly limited, but is preferably 30 to 500 mgKOH / g, and more preferably 50 to 200 mgKOH / g or more.

[0096] When the composition contains an alkali-soluble resin, the content of the alkali-soluble resin is preferably from 0.1 to 40% by mass, more preferably from 0.5 to 30% by mass, based on the total mass of the composition.

[0097] [Solvent] The composition may contain a solvent. Examples of the solvent include water and organic solvents, with organic solvents being preferred. From the viewpoint of coatability, the boiling point of the solvent is preferably 100 to 400°C, more preferably 150 to 300°C, and even more preferably 170 to 250°C. In this specification, the boiling point means the standard boiling point, unless otherwise specified.

[0098] The content of the solvent is preferably from 1 to 60% by mass, more preferably from 2 to 50% by mass, and even more preferably from 3 to 40% by mass, relative to the total mass of the composition, in terms of achieving better effects of the present invention.

[0099] [Curing Agent] The composition may contain a curing agent. There are no particular restrictions on the curing agent, and known curing agents can be used. The content of the curing agent in the composition is not particularly restricted, but is preferably 0.5 to 15 mass %, and more preferably 1.0 to 10 mass %, based on the total solid content of the composition.

[0100] [Other Optional Components] The composition may further contain other optional components in addition to the components described above. Examples include surfactants, thixotropes, polymerization inhibitors, antioxidants, sensitizers, co-sensitizers, curing accelerators, thermosetting accelerators, plasticizers, diluents, oil-sensitizing agents, and rubber components. Furthermore, known additives such as adhesion promoters to the substrate surface and other auxiliaries (e.g., defoamers, flame retardants, leveling agents, release accelerators, antioxidants, fragrances, surface tension modifiers, and chain transfer agents) may be added as needed.

[0101] <<Surfactant>> Examples of the surfactant include various surfactants such as fluorine-based surfactants, nonionic surfactants, cationic surfactants, anionic surfactants, silicone-based surfactants, etc. Examples of the surfactant include the surfactants described in paragraphs 0238 to 0245 of WO 2015 / 166779, the contents of which are incorporated herein by reference.

[0102] The present invention is basically configured as described above. While the structure and the method for manufacturing the structure of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various improvements and modifications may be made without departing from the spirit and scope of the present invention.

[0103] The features of the present invention will be explained in more detail below with reference to examples. The materials, reagents, amounts and ratios of substances, and procedures shown in the following examples can be modified as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the following examples. In this example, a configuration was used in which a transmitting antenna element 22 (see FIG. 1) and a receiving antenna element 24 (see FIG. 1) were arranged spaced apart on a substrate. Here, FIG. 15 is a schematic diagram showing the arrangement of the substrate 20, transmitting antenna element 22, and receiving antenna element 24 used in the example.

[0104] As shown in Fig. 15, the outer shape of the substrate 20 is rectangular, the outer shape of the transmitting antenna element 22 excluding the feeding point is rectangular, and the outer shape of the receiving antenna element 24 is rectangular. １ ×W ２ The size of the transmitting antenna element was 6.5 mm x 3 mm, and the thickness of the substrate was 0.1 mm (100 μm). １ 1.5 mm, D ２ The diameter was 0.75 mm and the thickness was 18 μm. ４ 0.3 mm, D ５ The receiving antenna element has a diameter of 0.15 mm and a thickness of 18 μm. １ 1.5 mm, D ２ The distance D between the transmitting antenna element and the receiving antenna element was set to 0.75 mm and the thickness was set to 18 μm. ３ The substrate was made of PTFE (polytetrafluoroethylene) with a relative permittivity εr of 3.05 and a conductivity of 1×10 -16 The transmitting antenna element and the receiving antenna element were made of copper, with a relative permittivity εr of 1 and a conductivity of 5.998×10 7 (S / m).

[0105] [Electromagnetic Shielding and Far-Field Gain] In Examples 1 to 39 and Comparative Examples 1 to 27, the electric field and magnetic field generated by the high frequency generated when a 60 GHz high-frequency signal was supplied to the transmitting antenna element were measured at the position of the receiving antenna element. The electric field attenuation and magnetic field attenuation were calculated in dB (decibels) as the integrated values ​​of the electric field and magnetic field at a position 2 mm away from the transmitting antenna element when a 60 GHz high-frequency signal was supplied to the transmitting antenna element. The calculated values ​​are negative values. The 2 mm distance is the distance between the transmitting antenna element and the receiving antenna element. The integrated values ​​of the electric field and magnetic field at a position 2 mm away are values ​​used to evaluate the electromagnetic shielding ability. The integrated values ​​of the electric field and magnetic field were calculated by solving the Helmholtz wave equation shown in Equation (a) and Equation (b) below using the RF module and Electromagnetic Wave (Frequency Domain) physics study in COMSOL Multiphysics (registered trademark). In the following formulas (a) and (b), j represents an imaginary number. ｒ = ε'-ε" × j, ε' is the real part of the permittivity, ε" is the imaginary part of the permittivity. μr = μ'-μ" × j, μ" is the real part of the permeability, μ" is the imaginary part of the permeability. k ０ = ω (μ ０ ・ε ０ ) 1 / 2 (m -1 ), ω is the angular velocity, i is the current, μ ０ is the magnetic permeability in a vacuum, ε ０ is the dielectric constant in a vacuum. ０ =(μ ０ ・ε ０ ) 1 / 2 (Ω) μ ０ = 1.257 x 10 -6 (H / m), ε ０ = 8.854 x 10 -12 (F / m).

[0106]

[0107]

[0108] The integrated value (dB) of the electric field at the position of the receiving antenna element was calculated relative to the case where there was no magnetic material, and the attenuation of the intensity was calculated as a negative value (dB). The maximum value of the far-field gain was calculated using the emw.gaindBEfar function in the COMSOL® system. The minimum value of the far-field gain value, emw.gaindBEfar, is 0 dB and the maximum value is 6.9 dB.

[0109] The integrated values ​​of the electric field and magnetic field at a distance of 2 mm were used to evaluate the electromagnetic wave shielding ability based on the following evaluation criteria: Evaluation criteria A: -6 dB or more B: -4 dB or more but less than -6 dB C: -2 dB or more but less than -4 dB D: Less than -2 dB

[0110] Using the maximum value of the far-field gain described above, the far-field gain was evaluated based on the following evaluation criteria: Evaluation criteria A: 6 dB or more B: 4 dB or more but less than 6 dB C: 2 dB or more but less than 4 dB D: Less than 2 dB

[0111] Note that the frequency of the high-frequency signal was changed to 47 GHz for Examples 3, 21, 28, and 35 and Comparative Examples 2, 9, 16, and 23. The frequency of the high-frequency signal was changed to 28 GHz for Examples 4, 22, 29, and 36 and Comparative Examples 3, 10, 17, and 24. The frequency of the high-frequency signal was changed to 18 GHz for Examples 5, 23, 30, and 37 and Comparative Examples 4, 11, 18, and 25. The frequency of the high-frequency signal was changed to 14 GHz for Examples 6, 24, 31, and 38 and Comparative Examples 5, 12, 19, and 26. The frequency of the high-frequency signal was changed to 2 GHz for Examples 7, 25, 32, and 39 and Comparative Examples 6, 13, 20, and 27. The evaluation results of the electromagnetic shielding ability and far-field gain for Examples 1 to 39 and Comparative Examples 1 to 27 are shown in Tables 9 and 10 below.

[0112] <Examples 1 to 39 and Comparative Examples 1 to 27> Various components were mixed based on the formulations shown in Tables 1 to 8 below to prepare compositions containing magnetic particles. The components used are as follows. (Magnetic particles) Barium ferrite M-1: Synthesized by the following method. 400.0 g of water kept at a liquid temperature of 35°C was stirred, and iron (III) chloride hexahydrate [FeCl ３ ・6H ２ O] 57.0 g, barium chloride dihydrate [BaCl ２ ・2H ２ O] 25.4 g and aluminum chloride hexahydrate [AlCl ３ ・6H ２A raw material aqueous solution prepared by dissolving 10.2 g of ammonium hydroxide in 216.0 g of water, and a solution prepared by adding 113.0 g of water to 181.3 g of a 5 mol / L aqueous sodium hydroxide solution, were added in their entirety at the same timing at a flow rate of 10 mL / min to obtain a first solution. Next, the temperature of the first solution was raised to 25°C, and then 39.8 g of a 1 mol / L aqueous sodium hydroxide solution was added while maintaining this temperature to obtain a second solution. The pH (hydrogen ion concentration) of the obtained second solution was 10.5±0.5. The pH was measured using a benchtop pH meter (F-71, manufactured by HORIBA, Ltd.). Next, the second solution was stirred for 15 minutes to obtain a solution containing a precipitate that would become a precursor of magnetoplumbite-type hexagonal ferrite (precursor-containing solution). The precursor-containing solution was then centrifuged three times (rotation speed: 2000 rpm (revolutions per minute), rotation time: 10 minutes), and the resulting precipitate was collected and washed with water. The collected precipitate was then dried for 12 hours in an oven at an internal atmospheric temperature of 95°C to obtain a precursor powder. The precursor powder was then placed in a muffle furnace, and the temperature inside the furnace was set to 1100°C in an air atmosphere, and fired for 4 hours to obtain a massive fired body. The resulting fired body was then crushed for 90 seconds using a cutter mill (Wonder Crusher WC-3, manufactured by Osaka Chemical Co., Ltd.) with the variable speed dial of the crusher set to "5" (rotation speed: approximately 10,000 to 15,000 rpm) to obtain a magnetic powder (barium ferrite M-1). The number average particle size of barium ferrite M-1 was 110 nm.

[0113] The crystal structure of the magnetic material constituting the magnetic powder was confirmed by X-ray diffraction analysis. The measurement device used was a powder X-ray diffractometer, X'Pert Pro, manufactured by PANalytical. The measurement conditions were as follows: - Measurement Conditions - X-ray source: CuKα radiation [wavelength: 1.54 Å (0.154 nm), output: 40 mA, 45 kV] Scan range: 20° < 2θ < 70° Scan interval: 0.05° Scan speed: 0.75° / min. As a result of the X-ray diffraction analysis, it was confirmed that the obtained magnetic powder had a magnetoplumbite-type crystal structure and was a single-phase magnetoplumbite-type hexagonal ferrite powder containing no crystal structures other than magnetoplumbite-type.

[0114] Strontium ferrite M-2: Synthesized by the following method: Strontium carbonate [SrCO ３ ; Fujifilm Wako Pure Chemical Industries, Ltd.] 46.3 g, α-iron (III) oxide [α-Fe ２ O ３ ; Fujifilm Wako Pure Chemical Industries, Ltd.] 255.1 g, and aluminum oxide [Al ２ O ３ 14.8 g of [Fujifilm Wako Pure Chemical Industries, Ltd., average particle size: 40 nm] was mixed for 2 minutes using a Wonder Crush / Mill (Model WDL-1, manufactured by Osaka Chemical Co., Ltd.). The resulting mixture was mixed with 300 g of water and flux (strontium chloride hexahydrate [SrCl ２ ・6H ２30.0 g of strontium ferrite M-2 (Fujifilm Wako Pure Chemical Industries, Ltd.) was added, and the mixture was stirred for 30 minutes using a Waring blender (model 7011HSJ, manufactured by WARING Corporation), followed by drying in a drying apparatus with an internal atmosphere temperature of 95°C. The dried mixture was then stirred and pulverized for 2 minutes using the Wonder Crush / Mill to obtain a magnetic powder precursor. The resulting precursor was placed in a muffle furnace, and the temperature inside the furnace was set to 1250°C under atmospheric conditions, followed by firing for 4 hours to obtain a fired product. The resulting fired product was stirred and pulverized for 2 minutes using the Wonder Crush / Mill, washed repeatedly with water, and then dried in a drying apparatus with an internal atmosphere temperature of 95°C. The mixture was then stirred and pulverized for 2 minutes using the Wonder Crush / Mill to obtain magnetic powder (strontium ferrite M-2). The number average particle diameter of strontium ferrite M-2 is 90 nm.・M-3: MC-617 (manufactured by Toda Kogyo Co., Ltd., 47 GHz) ・M-4: BMXF-5 (manufactured by BGRIMM, 28 GHz) ・M-5: CoTi-substituted Ba ferrite (synthesized in-house) ・M-6: ZnCoNb-substituted Ba ferrite (synthesized in-house) ・M-7: Co-substituted magnetite (synthesized in-house) ・M-8: Ni-Zn-Co ferrite (manufactured by Japan Metals and Chemicals Co., Ltd., volume average particle size (D50) 40 μm) ・M-9: Mn-Zn ferrite (manufactured by Powder Tech Co., Ltd., volume average particle size (D50) 0.2 μm) ・M-10: Mn-Zn ferrite (manufactured by Powder Tech Co., Ltd., volume average particle size (D50) 1.0 μm) ・M-11: Mn-Zn ferrite (manufactured by Powder Tech Co., Ltd., volume average particle size (D50) 3 μm) M-12: Mn ferrite (manufactured by Powder Tech Corporation, volume average particle size (D50) 0.4 μm) M-13: Mn ferrite (manufactured by Powder Tech Corporation, volume average particle size (D50) 1.6 μm) M-14: Mn ferrite (manufactured by Powder Tech Corporation, volume average particle size (D50) 4 μm) M-15: KUAMET NC1 (manufactured by Epson Atmix Corporation, volume average particle size (D50) 25 μm) M-16: ATFIN-NC1 (manufactured by Epson Atmix Corporation, volume average particle size (D50) 3 μm) M-17: AW2-08PF3F (manufactured by Epson Atmix Corporation, volume average particle size (D50) 3 μm)

[0115] The number-average particle diameter of the magnetic particles was measured by photographing the magnetic particles using a transmission electron microscope at a magnification of 100,000x, and printing the photograph on photographic paper at a total magnification of 500,000x, tracing the outline of the particles (primary particles) with a digitizer, and calculating the diameter of a circle with the same area as the traced area (circular area diameter). The volume-average particle diameter of the magnetic particles is the median diameter (D50) as described above, and was determined based on a particle size distribution curve showing the volume-based frequency distribution of the magnetic particles obtained using the "LA960N" laser diffraction / scattering particle size distribution analyzer manufactured by Horiba, Ltd.

[0116] (Binder) B-1: Poly(allyl methacrylate-methacrylate) resin (molecular weight: approximately 42,000) represented by the following structural formula.

[0117] B-2: Poly(benzyl methacrylate-methacrylate) resin (molecular weight approximately 11,000) represented by the following structural formula.

[0118]

[0119] (Dispersants) C-1: Hinoact T-6000 (Kawaken Fine Chemicals Co., Ltd.) C-2: Represented by the following structural formula (synthetic product (15)).

[0120]

[0121] C-3: Represented by the following structural formula (synthetic product (25)).

[0122]

[0123] C-4: Represented by the following structural formula (synthetic product (38)).

[0124]

[0125] (thixotropic agent) D-1: Flonon RCM-100 (fatty acid ester / aromatic ester, Kyoeisha Chemical Co., Ltd.) D-2: Tallen VA705B (higher fatty acid amide, Kyoeisha Chemical Co., Ltd.)

[0126] (Curing agent) E-1: Rikacid MTA-15 (New Japan Chemical Co., Ltd.) E-2: 4-4-diaminodiphenyl sulfone (Fujifilm Wako Pure Chemical Industries, Ltd.)

[0127] (Epoxy compounds) F-1: Denacol EX-314 (Nagase & Co., Ltd.) F-2: JER871 (Mitsubishi Chemical Corporation) F-3: jER890 (Mitsubishi Chemical Corporation) F-4: 4,4'-methylenebis(N,N-diglycidylaniline) (Tokyo Chemical Industry Co., Ltd.) F-5: 1,2-cyclohexanedicarboxylate diglycidyl (Tokyo Chemical Industry Co., Ltd.) F-6: Ethylhexyl glycidyl ether (Tokyo Chemical Industry Co., Ltd.) F-7: Denacol EX-614 (Nagase & Co., Ltd.)

[0128] (Solvent) G-1: Glycerol triacetate (Fujifilm Wako Pure Chemical Industries, Ltd.) G-2: 1,4-butanediol diacetate (1,4-BDDA), boiling point 232°C

[0129] Example 1 Example 1 has the configuration shown in FIG. 1 and is designated as Shape 1. In Example 1, copper wiring for supplying power to a transmitting antenna element and a receiving antenna element was formed on a substrate using a photolithography process. After that, an FR-4 layer equivalent to 500 μm was formed on the back side of the substrate. Then, a microdrill with a diameter of 125 μm was used to form through-holes penetrating the substrate around the forming area of ​​the transmitting antenna element and the forming area of ​​the receiving antenna element. The through-holes have a circular opening shape as shown in FIG. 2. The diameter of the circle was set to 0.31 mm. The spacing D between the through-holes was set to 0.31 mm. ６was set to 0.31 mm. In Example 1, Formulation 1 was used for the composition containing magnetic particles. The pressure in the lower layer of the through-hole was reduced, and a composition containing magnetic particles was applied to the surface of the substrate by screen printing, and the magnetic particles were filled into the upper part of the through-hole. Next, the embedded magnetic material was thermally cured by heat treatment at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes, thereby forming a magnetic material portion. The magnetic layer protruding from the upper surface of the substrate and the back surface of the FR-4 layer was polished and removed to achieve flatness. Next, a copper film was formed on the surface of the substrate by electrolytic plating. Next, a transmitting antenna element and a receiving antenna element were formed on the surface of the substrate by a photolithography process and a wet etching process. In this manner, the structure of Example 1 was formed.

[0130] (Example 2) Example 2 was the same as Example 1, except that Formula 2 was used for the composition containing magnetic particles. (Example 3) Example 3 was the same as Example 1, except that Formula 3 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 47 GHz. (Example 4) Example 4 was the same as Example 1, except that Formula 4 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 28 GHz. (Example 5) Example 5 was the same as Example 1, except that Formula 5 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 18 GHz. (Example 6) Example 6 was the same as Example 1, except that Formula 6 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 14 GHz. Example 7 Example 7 was the same as Example 1 except that Formulation 7 was used for the composition containing magnetic particles and that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 2 GHz. Example 8 Example 8 was the same as Example 1 except that Formulation 8 was used for the composition containing magnetic particles.

[0131] (Example 9) Example 9 was the same as Example 1, except that formulation 9 was used for the composition containing magnetic particles. (Example 10) Example 10 was the same as Example 1, except that formulation 10 was used for the composition containing magnetic particles. (Example 11) Example 11 was the same as Example 1, except that formulation 11 was used for the composition containing magnetic particles. (Example 12) Example 12 was the same as Example 1, except that formulation 12 was used for the composition containing magnetic particles. (Example 13) Example 13 was the same as Example 1, except that formulation 13 was used for the composition containing magnetic particles. (Example 14) Example 14 was the same as Example 1, except that formulation 14 was used for the composition containing magnetic particles. (Example 15) Example 15 was the same as Example 1, except that formulation 15 was used for the composition containing magnetic particles. (Example 16) Example 16 was the same as Example 1, except that formulation 16 was used for the composition containing magnetic particles. Example 17 Example 17 was the same as Example 1, except that Formulation 17 was used for the composition containing magnetic particles. Example 18 Example 18 was the same as Example 1, except that Formulation 18 was used for the composition containing magnetic particles.

[0132] (Example 19) Example 19 has the configuration shown in FIG. 8 and is designated as Shape 2. Example 19 is the same as Example 1 except that the magnetic wall portion and magnetic portion are arranged as shown in FIG. 8 and that no magnetic portion is formed on the substrate. In Example 19, the substrate is not provided with an FR-4 layer. In Example 19, the magnetic wall portion has the size shown in FIG. 9. The size of the magnetic wall portion is W ３ ×W ４ The thickness W of the magnetic wall was 9.5 mm x 6 mm. ５ The space W between the magnetic wall and the substrate 20 was set to 1 mm. ６The thickness was set to 0.5 mm. In Example 19, a pattern portion of the magnetic body was formed by pattern printing using a composition containing magnetic particles of Formulation 1. Next, the surface of the pattern portion was used as the bottom surface, and a pattern portion of the magnetic body wall was formed by pattern printing using a composition containing magnetic particles of Formulation 1 on the outer edge of the surface of the magnetic body. Next, the composition was heat-treated at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes to thermally cure the composition, thereby integrally forming the magnetic body and the magnetic body wall. The integrated magnetic body and magnetic body wall had a recess. A substrate was prepared with a transmitting antenna element and a receiving antenna element formed on its surface. No magnetic body was formed on the substrate. Next, the substrate was placed with its back surface facing the bottom surface of the recess, i.e., the surface of the magnetic body, and the substrate was fixed to the surface of the magnetic body using a thermosetting adhesive. In this way, the structure of Example 19 was formed.

[0133] (Example 20) Example 20 was the same as Example 19, except that formulation 2 was used for the composition containing magnetic particles. (Example 21) Example 21 was the same as Example 19, except that formulation 3 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 47 GHz. (Example 22) Example 22 was the same as Example 19, except that formulation 4 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 28 GHz. (Example 23) Example 23 was the same as Example 19, except that formulation 5 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 18 GHz. (Example 24) Example 24 was the same as Example 19, except that formulation 6 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 14 GHz. (Example 25) Example 25 was the same as Example 19, except that formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0134] (Example 26) Example 26 has the configuration shown in FIG. 12 and is called Shape 3. Example 26 is the same as Example 1 except that the magnetic layers are arranged as shown in FIG. 12 and no magnetic material portion is formed on the substrate. In Example 26, the substrate is not provided with an FR-4 layer. In Example 26, the magnetic layers have the size shown in FIG. 13. The size of the magnetic layers is W ７ ×W ８ The dimensions of the first magnetic material portion were 9.5 mm x 6 mm. The thickness of the magnetic material layer was 0.9 mm. ７ , the width D of the second magnetic body part ８ and the width D of the third magnetic body part ９ The gap distance D between the first magnetic body part and the second magnetic body part was set to 1.9 mm. １０ The gap distance D between the first magnetic part and the third magnetic part was set to 2 mm. １１ The length W of the first magnetic body part, the second magnetic body part, and the third magnetic body part was set to 1.7 mm. ９ The thickness of the magnetic layer was set to 4 mm. For the magnetic layer, a composition containing magnetic particles of Formulation 1 was applied to the surface of the substrate in a pattern using a screen printing method. Next, the composition was thermally cured by heat treatment at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes to form the magnetic layer. In this way, the structure of Example 26 was formed.

[0135] (Example 27) Example 27 was the same as Example 26, except that Formulation 2 was used for the composition containing magnetic particles. (Example 28) Example 28 was the same as Example 26, except that Formulation 3 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 47 GHz. (Example 29) Example 29 was the same as Example 26, except that Formulation 4 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 28 GHz. (Example 30) Example 30 was the same as Example 26, except that Formulation 5 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 18 GHz. (Example 31) Example 31 was the same as Example 26, except that Formulation 6 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 14 GHz. (Example 32) Example 32 was the same as Example 26, except that formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0136] Example 33 Example 33 has the configuration shown in FIG. 14 and is designated as Shape 4. Example 33 is the same as Example 1 except that the magnetic layer is arranged as shown in FIG. 14 and no magnetic portion is formed on the substrate. In Example 33, an FR-4 layer is not provided on the substrate. In Example 33, the size of the magnetic layer is the same as in Example 26. In addition, in Example 33, the magnetic layer is formed in the same manner as in Example 26, except that the magnetic layer is formed on the back surface of the substrate.

[0137] (Example 34) Example 34 was the same as Example 33, except that Formula 2 was used for the composition containing magnetic particles. (Example 35) Example 35 was the same as Example 33, except that Formula 3 was used for the composition containing magnetic particles and the frequency of the high-frequency signal when determining the electric field decay and magnetic field decay was 47 GHz. (Example 36) Example 36 was the same as Example 33, except that Formula 4 was used for the composition containing magnetic particles and the frequency of the high-frequency signal when determining the electric field decay and magnetic field decay was 28 GHz. (Example 37) Example 37 was the same as Example 33, except that Formula 5 was used for the composition containing magnetic particles and the frequency of the high-frequency signal when determining the electric field decay and magnetic field decay was 18 GHz. (Example 38) Example 38 was the same as Example 33, except that Formula 6 was used for the composition containing magnetic particles and the frequency of the high-frequency signal when determining the electric field decay and magnetic field decay was 14 GHz. (Example 39) Example 39 was the same as Example 33, except that formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0138] (Comparative Examples 1 to 27) Comparative Example 1 has the configuration shown in FIG. 15 and is designated as Shape 5. Comparative Example 1 is the same as Example 1 except that a magnetic material portion is not provided. In Comparative Example 1, an FR-4 layer is not provided on the substrate. In Comparative Example 1, the sizes of the substrate, transmitting antenna element, and receiving antenna element are the same as those shown in FIG. 15 above. Note that Comparative Examples 1 to 6 have a configuration without a magnetic material portion, and therefore are marked with "-" in the prescription column of Table 10 below.

[0139] (Comparative Example 2) Comparative Example 2 was the same as Comparative Example 1, except that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 47 GHz. (Comparative Example 3) Comparative Example 3 was the same as Comparative Example 1, except that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 28 GHz. (Comparative Example 4) Comparative Example 4 was the same as Comparative Example 1, except that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 18 GHz. (Comparative Example 5) Comparative Example 5 was the same as Comparative Example 1, except that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 14 GHz. (Comparative Example 6) Comparative Example 6 was the same as Comparative Example 1, except that the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 2 GHz.

[0140] (Comparative Example 7) Comparative Example 7 has the configuration shown in Figs. 16 and 17 and is called Shape 6. Comparative Example 7 is the same as Example 1 except that the magnetic material part 102 shown in Figs. 16 and 17 is used and that no magnetic material part is formed on the substrate 20. In Comparative Example 7, an FR-4 layer is not provided on the substrate. The structure 100 of Comparative Example 7 has a magnetic material part 102. The magnetic material part 102 has a first opening 103 that opens above the transmitting antenna element and a second opening 104 that opens above the receiving antenna element. The size of the magnetic material part 102 is the same as the size shown in Fig. 17 above. The size of the magnetic material part of Comparative Example 7 is M １ ×M ２ The size of the first opening 103 was set to 6.5 mm x 3 mm (see FIG. 17). That is, it was set to the same size as the substrate. The thickness tm of the magnetic material portion (see FIG. 16) was set to 0.9 mm. １ ×g ３ (See FIG. 17) was set to 2 mm x 0.95 mm. The second opening 104 was g ２ ×g ３ The dimensions of the magnetic material portion (see FIG. 17) were 1.7 mm x 0.95 mm. The magnetic material portion was formed by applying a composition containing magnetic particles of Formulation 1 in a pattern to the surface of the substrate using a screen printing method. The magnetic material portion was then thermally cured by heat treatment at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes. In this manner, the structure 100 of Comparative Example 7 was formed.

[0141] (Comparative Example 8) Comparative Example 8 was the same as Comparative Example 7, except that Formulation 2 was used for the composition containing magnetic particles. (Comparative Example 9) Comparative Example 9 was the same as Comparative Example 7, except that Formulation 3 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 47 GHz. (Comparative Example 10) Comparative Example 10 was the same as Comparative Example 7, except that Formulation 4 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 28 GHz. (Comparative Example 11) Comparative Example 11 was the same as Comparative Example 7, except that Formulation 5 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 18 GHz. (Comparative Example 12) Comparative Example 12 was the same as Comparative Example 7, except that Formulation 6 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 14 GHz. (Comparative Example 13) Comparative Example 13 was the same as Comparative Example 7, except that Formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0142] (Comparative Example 14) Comparative Example 14 has the configuration of the structure 100a shown in Figures 18 and 19, and is designated as Shape 7. Comparative Example 14 is the same as Example 1, except that the magnetic material part 102 shown in Figure 18 is used, and that no magnetic material part is formed on the substrate 20. In Comparative Example 14, an FR-4 layer is not provided on the substrate. The magnetic material part 102 of Comparative Example 14 has a recess 105. A first opening 103 that opens above the transmitting antenna element and a second opening 104 that opens above the receiving antenna element are provided on the bottom surface 105c of the recess 105. The size of the magnetic material part of Comparative Example 14 is M ３ ×M ４ The dimensions of the recess 105 (see FIG. 19) were 9.5 mm x 6 mm. The thickness tm of the magnetic material portion (see FIG. 18) was 2 mm. The opening size of the recess 105 was M ５ ×M ６ (See FIG. 19) was set to 6 mm x 3 mm. The first opening 103 was １ ×g ３ (See FIG. 19) was set to 2 mm x 0.95 mm. The second opening 104 was set to g２ ×g ３ The dimensions of the magnetic material portion 102 (see FIG. 19 ) were 1.7 mm × 0.95 mm. The first opening 103 and the second opening 104 were formed at a position 1 mm below the surface 102a of the magnetic material portion 102 in the thickness direction Dt. The magnetic material portion was formed by applying a composition containing magnetic particles of Formulation 1 in a pattern to the surface of the substrate using a screen printing method, and then thermally curing the composition by heat treatment at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes. In this manner, the structure 100a of Comparative Example 14 was formed.

[0143] (Comparative Example 15) Comparative Example 15 was the same as Comparative Example 14, except that Formulation 2 was used for the composition containing magnetic particles. (Comparative Example 16) Comparative Example 16 was the same as Comparative Example 14, except that Formulation 3 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 47 GHz. (Comparative Example 17) Comparative Example 17 was the same as Comparative Example 14, except that Formulation 4 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 28 GHz. (Comparative Example 18) Comparative Example 18 was the same as Comparative Example 14, except that Formulation 5 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 18 GHz. (Comparative Example 19) Comparative Example 19 was the same as Comparative Example 14, except that Formulation 6 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to determine the electric field attenuation and magnetic field attenuation was 14 GHz. (Comparative Example 20) Comparative Example 20 was the same as Comparative Example 14, except that Formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0144] Comparative Example 21 Comparative Example 21 has the structure 100b shown in FIG. 20 and is designated Shape 8. Note that FIG. 20 omits a portion of the magnetic material portion 106. Comparative Example 21 is identical to Example 1 except that the magnetic material portion 106 shown in FIG. 20 is provided and that no magnetic material portion is formed within the substrate 20. Comparative Example 21 has a configuration in which the magnetic material portion 106 is provided on the opposite side to Example 1. Comparative Example 21 has a configuration in which the magnetic material portion 106 is only provided on the substrate, and no magnetic material portion is provided within the substrate. Similar to the magnetic material portion 26 (see FIG. 1 ), the magnetic material portions 106 extend in the thickness direction Dt, are spaced apart and parallel to each other, and have the same length in the thickness direction Dt. In Comparative Example 21, the magnetic material portions 106 are provided on the surface 20a of the substrate 20. The magnetic material portions 106 are not provided on the transmitting antenna element or the receiving antenna element. First, a copper film was formed on the surface of the substrate by electrolytic plating. Next, a transmitting antenna element and a receiving antenna element were formed on the surface of the substrate by a photolithography process and a wet etching process. Next, an FR-4 layer equivalent to 500 μm was formed on the surface of the substrate. Then, using a microdrill with a diameter of 125 μm, through-holes were formed around the transmitting antenna element and the receiving antenna element, penetrating the substrate and the FR-4 layer. The through-holes had a circular outer shape as shown in FIG. 2. The diameter of the circle was set to 0.31 mm. The spacing D between the through-holes was set to 0.31 mm. ６ was set to 0.31 mm. In Comparative Example 21, Formulation 1 was used for the composition containing magnetic particles. The back surface of the substrate was depressurized, and a composition containing magnetic particles of Formulation 1 was applied to the surface of the FR-4 layer by screen printing, and the through-holes in the FR-4 layer were filled with the magnetic particles. Next, the embedded magnetic material was thermally cured by heat treatment at a temperature of 150°C for 10 minutes and at a temperature of 200°C for 50 minutes, thereby forming a magnetic material portion. The back surface of the substrate and the magnetic layer protruding from the surface of the FR-4 layer were polished and removed to achieve flattening. In this way, structure 100b of Comparative Example 21 was formed.

[0145] (Comparative Example 22) Comparative Example 22 was the same as Comparative Example 21, except that Formulation 2 was used for the composition containing magnetic particles. (Comparative Example 23) Comparative Example 23 was the same as Comparative Example 21, except that Formulation 3 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 47 GHz. (Comparative Example 24) Comparative Example 24 was the same as Comparative Example 21, except that Formulation 4 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 28 GHz. (Comparative Example 25) Comparative Example 25 was the same as Comparative Example 21, except that Formulation 5 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 18 GHz. (Comparative Example 26) Comparative Example 26 was the same as Comparative Example 21, except that Formulation 6 was used for the composition containing magnetic particles and the frequency of the high-frequency signal used to determine the electric field decay and magnetic field decay was 14 GHz. (Comparative Example 27) Comparative Example 27 was the same as Comparative Example 21, except that Formulation 7 was used for the composition containing magnetic particles, and the frequency of the high-frequency signal used to measure the electric field attenuation and magnetic field attenuation was 2 GHz.

[0146] The complex part μ" of the complex relative magnetic permeability μ of the electromagnetic wave absorbing films was measured as follows. A vector network analyzer (product name: N5225B) manufactured by Keysight and a horn antenna (product names: RH12S23, RH06S10) manufactured by Keycom Corporation were used as measuring devices. Subsequently, by the free space method, the incident angle was set to 0°, the sweep frequency band was set to 55.0 GHz to 95.0 GHz, and S parameters were measured every 0.1 GHz with one plane of each of the electromagnetic wave absorbing films facing the incident side, thereby determining the complex part μ" of the complex relative magnetic permeability μ at 60 GHz. The sweep frequency band was changed to determine the complex part μ" of the complex relative magnetic permeability μ at 28 GHz and 47 GHz.

[0147]

[0148]

[0149]

[0150]

[0151]

[0152]

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[0154]

[0155]

[0156]

[0157] As shown in Tables 9 and 10, Examples 1 to 39 achieved both electromagnetic wave shielding ability and far-field gain compared to Comparative Examples 1 to 27. Thus, Examples 1 to 39 had superior antenna gain of the transmitting antenna element compared to Comparative Examples 1 to 27, and the influence of the electromagnetic field between the transmitting antenna element and the receiving antenna element was reduced. Comparative Examples 1 to 27 had poor results for either the electromagnetic wave shielding ability or the far-field gain, and were unable to achieve both. From Examples 1 to 39, Shape 1 was superior in both electromagnetic wave shielding ability and far-field gain. Shape 4 was next to Shape 1 in excellence. Shapes 3 and 4 differ in their placement positions (on the front and back surfaces of the substrate), but it was found that it was better to place the magnetic layer on the back surface of the substrate.

[0158] 10, 10a, 10b, 10c, 10d, 10e Structure 20 Substrate 20a, 32a, 102a Front surface 20b, 28b Back surface 20c Between 22 Transmitting antenna element 22a Feeding point 24 Receiving antenna element 25 Through hole 26, 32, 102, 106 Magnetic body part 27 Composition 28 Interposer 29 Circuit board 29c, 42 Connection terminal 30 Magnetic body wall part 32c Region 34 Magnetic body layer 34a First magnetic body part 34b Second magnetic body part 34c Third magnetic body part 34d Fourth magnetic body part 34e End part 35a, 35b Gap 37, 38 Wiring 40 Wiring layer 44 Solder ball 45 Underfill layer 100, 100a, 100b Structure 103 First opening 104 Second opening 105 Recess 105c Bottom surface D ３ , D１０ , D １１ Distance Dt Thickness direction Dx One direction Dy Other direction

Claims

1. A structure having a substrate; a transmitting antenna element and a receiving antenna element arranged on one side of the substrate; and a plurality of magnetic material parts arranged within the substrate, extending in the thickness direction of the substrate and spaced apart from each other.

2. The structure according to claim 1, wherein, when the substrate is viewed in a normal direction to the one surface, the magnetic material portion is disposed around the transmitting antenna element and the receiving antenna element.

3. A structure having a substrate; a transmitting antenna element and a receiving antenna element arranged on one side of the substrate; a magnetic wall portion arranged on the one side of the substrate, surrounding the transmitting antenna element and the receiving antenna element, except between the transmitting antenna element and the receiving antenna element; and a magnetic portion arranged on the other side of the substrate.

4. The structure according to claim 3, wherein the magnetic material portion is disposed so as to cover the entire surface of the other surface side of the substrate.

5. The structure according to claim 1 or 3, wherein the magnetic material portion includes magnetic particles.

6. A structure comprising: a substrate; a transmitting antenna element and a receiving antenna element arranged on one side of the substrate; and a magnetic layer arranged on the substrate, wherein the magnetic layer has, when the substrate is viewed in the normal direction to the one side, a first magnetic material portion arranged between the transmitting antenna element and the receiving antenna element, a second magnetic material portion arranged so as to sandwich the first magnetic material portion and the transmitting antenna element, a third magnetic material portion arranged so as to sandwich the first magnetic material portion and the receiving antenna element, and a fourth magnetic material portion connecting the first magnetic material portion, the second magnetic material portion, and the third magnetic material portion, wherein the fourth magnetic material portion is arranged to avoid an area where the transmitting antenna element and the receiving antenna element are provided.

7. The structure according to claim 6, wherein the magnetic layer is disposed on the one surface side of the substrate.

8. The structure according to claim 6, wherein the magnetic layer is disposed on the other surface side of the substrate.

9. The structure described in claim 6, wherein in the magnetic layer, the first magnetic body portion, the second magnetic body portion, and the third magnetic body portion are linear members extending in one direction, the fourth magnetic body portion is a linear member extending in another direction perpendicular to the one direction, the first magnetic body portion, the second magnetic body portion, and the third magnetic body portion are spaced apart from each other and arranged in parallel, and the fourth magnetic body portion connects the first magnetic body portion, the second magnetic body portion, and the third magnetic body portion at their ends in the one direction.

10. The structure of claim 6, wherein said magnetic layer comprises magnetic particles.

11. The structure according to claim 1 or 3, wherein, when the real part of the complex relative magnetic permeability μ is μ' and the complex part is μ", the magnetic material portion has μ" of 0.01 to 10 at frequencies between 1 and 40 GHz, and μ" of 0.01 to 5 at frequencies exceeding 40 GHz and not exceeding 100 GHz.

12. The structure according to claim 6, wherein the magnetic layer has a complex relative permeability μ of which the real part is μ' and the complex part is μ", where μ" is 0.01 to 10 at frequencies between 1 and 40 GHz, and μ" is 0.01 to 5 at frequencies exceeding 40 GHz and not exceeding 100 GHz.

13. The structure of claim 1, further comprising an interposer laminated to said substrate.

14. The structure according to claim 5, wherein the magnetic particles contain at least one metal element selected from the group consisting of Ni, Co and Fe, and have a number average particle size of 20 nm to 50 μm.

15. The structure according to claim 10, wherein the magnetic particles contain at least one metal element selected from the group consisting of Ni, Co, and Fe, and have a number average particle size of 20 nm to 50 μm.

16. A method for manufacturing a structure, comprising the steps of: forming a plurality of through holes penetrating a substrate in the thickness direction; filling the through holes with magnetic particles; and forming a transmitting antenna element and a receiving antenna element on the substrate.

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