Display panel and display apparatus

Abstract

Provided in the present application are a display panel and a display apparatus. A first light emitting layer emits light of a first wavelength λ1, and a second light emitting layer emits light of a second wavelength λ2 less than the first wavelength λ1. The orthographic projection of a first covering unit on a substrate layer overlaps with the orthographic projection of the first light emitting layer on the substrate layer. The orthographic projection of a second covering unit on the substrate layer overlaps with the orthographic projection of the second light emitting layer on the substrate layer. The thickness of at least part of the first covering unit is greater than the thickness of at least part of the second covering unit.

Description

Display panel and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Organic Light Emitting Diode (OLED) displays have advantages such as wide viewing angle, high contrast, and fast response. However, OLED displays have the problem of high power consumption when displaying high-brightness images.

[0003] Therefore, it is necessary to propose a technical solution to reduce the power consumption of an organic light emitting diode display device during display. SUMMARY OF THE INVENTION

[0004] In view of this, the present application provides a display panel and a display device to reduce power consumption of the display panel and the display device during display.

[0005] In a first aspect, the present application provides a display panel comprising a substrate layer, a light-emitting device layer, a thin-film encapsulation layer, and a cover layer. The light-emitting device layer is disposed on the substrate layer and comprises a transparent anode layer, a light-emitting layer, and a cathode layer. The light-emitting layer is disposed between the transparent anode layer and the cathode layer. The transparent anode layer is located on the side of the light-emitting layer closest to the substrate layer. The transparent anode layer comprises a first transparent anode and a second transparent anode spaced apart from each other. The light-emitting layer comprises a first light-emitting layer disposed on the first transparent anode and a second light-emitting layer disposed on the second transparent anode. The first light-emitting layer emits light of a first wavelength λ1, and the second light-emitting layer emits light of a second wavelength λ2, wherein the first wavelength λ1 is greater than the second wavelength λ2. The thin-film encapsulation layer is located on the side of the light-emitting device layer away from the substrate layer. The cover layer is disposed between the cathode layer and the thin-film encapsulation layer. The refractive index of the cover layer is greater than the refractive index of the cathode layer. The cover layer comprises a first cover unit and a second cover unit. The orthographic projection of the first cover unit on the substrate layer overlaps with the orthographic projection of the first light-emitting layer on the substrate layer. The orthographic projection of the second cover unit on the substrate layer overlaps with the orthographic projection of the second light-emitting layer on the substrate layer. A thickness of at least a portion of the first covering unit is greater than a thickness of at least a portion of the second covering unit.

[0006] In a second aspect, the present application further provides a display device, which includes the above-mentioned display panel. Beneficial effects

[0007] In some embodiments of the present application, the refractive index of the cover layer is greater than that of the cathode layer, which helps improve the light extraction efficiency of the light emitted by the light-emitting layer from the cathode layer to the cover layer. Furthermore, the first light-emitting layer emits light of a first wavelength λ1, and the second light-emitting layer emits light of a second wavelength λ2, where the first wavelength λ1 is greater than the second wavelength λ2. The orthographic projection of the first cover unit on the substrate overlaps with the orthographic projection of the first light-emitting layer on the substrate. The orthographic projection of the second cover unit on the substrate overlaps with the orthographic projection of the second light-emitting layer on the substrate. The thickness of at least a portion of the first cover unit is greater than the thickness of at least a portion of the second cover unit. In this arrangement, a thicker first cover unit is provided for the longer first wavelength λ1, and a thinner second cover unit is provided for the shorter second wavelength λ2. The thickness of the cover layers is designed differently for light of different wavelengths. The microcavity length of the microcavity structure including the first cover unit matches the first wavelength λ1, and the microcavity length of the microcavity structure including the second cover unit matches the second wavelength λ2, which helps further improve the light extraction efficiency of both the first and second wavelengths. The current of the display panel is reduced when displaying a bright picture, thereby reducing the power consumption of the display device when displaying a bright picture, and reducing the heat, thereby improving the heating problem. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] FIG1 is a schematic diagram of the cross-sectional structure of a display panel according to some embodiments of the present application.

[0009] FIG2 is a schematic diagram of a partially enlarged cross-sectional structure of a display panel according to some embodiments of the present application.

[0010] FIG3 shows the spectrum test results of transmittance of the first color resist unit, the second color resist unit, and the third color resist unit of the filter layer of the display panel according to some embodiments of the present application to light of different wavelengths.

[0011] FIG4 is a schematic structural diagram of a display device according to some embodiments of the present application.

[0012] The reference numerals are as follows:

[0013] 100, display panel; 200, display device;

[0014] 11, base layer; 121, driving circuit layer; 122, pixel definition layer; 122a, pixel opening;

[0015] 13, light-emitting device layer; 131, anode layer; 1311, first anode; 1312, second anode; 1313, third anode; 1314, first transparent anode layer; 1315, reflective anode layer; 1316, second transparent anode layer; 1317, first transparent anode; 1318, second transparent anode; 1319, third transparent anode; 132, light-emitting layer; 1321, first light-emitting layer; 1322, second light-emitting layer; 1323, third light-emitting layer; 133, cathode layer; 134, hole transport layer; 136, electron transport layer; 137, electron injection layer;

[0016] 135, dimming layer; 1351, first dimming unit; 1352, second dimming unit; 1353, third dimming unit;

[0017] 14, covering layer; 141, first covering unit; 1411, first middle portion; 1412, first edge portion; 142, second covering unit; 1421, second middle portion; 1422, second edge portion; 143, third covering unit; 1431, third middle portion; 1432, third edge portion;

[0018] 15, thin film encapsulation layer; 16, protective layer; 17, touch layer;

[0019] 18, filter layer; 181, black matrix; 181a, opening; 182, first color-resistance unit; 183, third color-resistance unit; 184, second color-resistance unit;

[0020] 19, flat layer; 201, first microcavity structure; 202, second microcavity structure; 203, third microcavity structure. Modes for Carrying Out the Invention

[0021] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0022] 1 , which is a schematic cross-sectional view of a display panel according to some embodiments of the present invention, shows that the display panel 100 includes a substrate layer 11 , a light-emitting device layer 13 , a thin-film encapsulation layer 15 , and a cover layer 14 .

[0023] The base layer 11 can be a flexible base, or a hard base such as a glass substrate. In a specific embodiment, the base layer 11 is a flexible base. In this way, the display panel can be bent.

[0024] The light emitting device layer 13 is disposed on the substrate layer 11. The light emitting device layer 13 includes an anode layer 131, a light emitting layer 132, and a cathode layer 133. The light emitting layer 132 is disposed between the anode layer 131 and the cathode layer 133. The anode layer 131 is located on the side of the light emitting layer 132 close to the substrate layer 11.

[0025] Please refer to Figure 2, which is a partially enlarged cross-sectional schematic diagram of the display panel structure of some embodiments of the present application. As shown in Figures 1 and 2, the anode layer 131 includes a first anode 1311, a second anode 1312, and a third anode 1313, which are spaced apart. The anode layer 131 includes a first transparent anode layer 1314, a reflective anode layer 1315, and a second transparent anode layer 1316, which are stacked in sequence. The second transparent anode layer 1316 is located on the side of the reflective anode layer 1315 facing away from the substrate layer 11, that is, the second transparent anode layer 1316 is the top transparent anode layer. The second transparent anode layer 1316 includes a first transparent anode 1317, a second transparent anode 1318, and a third transparent anode 1319, which are spaced apart. The first anode 1311 includes the first transparent anode 1317. The second anode 1312 includes the second transparent anode 1318. The third anode 1313 includes the third transparent anode 1319. The reflective anode layer 1315 further includes three reflective anodes: a first anode 1311 , a second anode 1312 , and a third anode 1313 . The first transparent anode layer 1314 is a bottom transparent anode layer and further includes three transparent anodes: a first anode 1311 , a second anode 1312 , and a third anode 1313 .

[0026] The thickness of the first transparent anode layer 1314 and the second transparent anode layer 1316 is greater than or equal to 10 nanometers and less than or equal to 100 nanometers. Alternatively, the thickness of the first transparent anode layer 1314 and the second transparent anode layer 1316 is greater than or equal to 20 nanometers and less than or equal to 80 nanometers. Alternatively, the thickness of the first transparent anode layer 1314 and the second transparent anode layer 1316 is greater than or equal to 30 nanometers and less than or equal to 60 nanometers. The material of the first transparent anode layer 1314 and the second transparent anode layer 1316 includes at least one of indium tin oxide and indium zinc oxide. The material of the reflective anode layer 1315 includes, but is not limited to, metals, including but not limited to silver.

[0027] As shown in Figures 1 and 2, the light-emitting layer 132 includes a first light-emitting layer 1321, a second light-emitting layer 1322, and a third light-emitting layer 1323, which are arranged in a spaced relationship. The first light-emitting layer 1321 is disposed on the first transparent anode 1317 of the first anode 1311. The second light-emitting layer 1322 is disposed on the second transparent anode 1318 of the second anode 1312. The third light-emitting layer 1323 is disposed on the third transparent anode 1319 of the third anode 1313. The first light-emitting layer 1321 emits light having a first wavelength λ1. The second light-emitting layer 1322 emits light having a second wavelength λ2. The third light-emitting layer 1323 emits light having a third wavelength λ3.

[0028] The light of the first wavelength λ1, the light of the second wavelength λ2, and the light of the third wavelength λ3 are each one of red light, green light, and blue light. In this way, the display panel can emit white light. It is understood that one of the light of the first wavelength λ1, the light of the second wavelength λ2, and the light of the third wavelength λ3 can also be yellow light, or one of the light of the first wavelength λ1, the light of the second wavelength λ2, and the light of the third wavelength λ3 can include both red light and green light.

[0029] In some embodiments, the light of the first wavelength λ1 may be one of red light and green light, the light of the third wavelength λ3 may be the other of red light and green light, and the light of the second wavelength λ2 may be blue light. In other embodiments, the light of the first wavelength λ1 may also be blue light, one of the light of the second wavelength λ2 and the light of the third wavelength λ3 may be red light, and the other of the light of the second wavelength λ2 and the light of the third wavelength λ3 may be green light.

[0030] To describe the technical solution of the present application, in the present application, the first wavelength λ1 is greater than the second wavelength λ2, and the third wavelength λ3 is greater than the second wavelength λ2. Light of the first wavelength λ1 is red light, light of the second wavelength λ2 is blue light, and light of the third wavelength λ3 is green light. It is understood that the light of the first wavelength λ1 may also be green light, the light of the third wavelength λ3 may also be red light, and the light of the second wavelength λ2 may also be blue light.

[0031] The cathode layer 133 can be a full-surface layer, covering the first light-emitting layer 1321, the second light-emitting layer 1322, and the third light-emitting layer 1323. The cathode layer 133 can also be a patterned conductive layer. The cathode layer 133 can be translucent or semi-translucent. The thickness of the cathode layer 133 is greater than or equal to 1 nanometer and less than or equal to 100 nanometers. The material of the cathode layer 133 can include at least one of a transparent conductive material and a metal. The refractive index of the cathode layer 133 is greater than or equal to 1.4 and less than or equal to 1.6. For example, the cathode layer 133 comprises a magnesium-silver alloy.

[0032] In some embodiments, the light emitting device layer 13 may further include at least one of a hole transport layer, a hole injection layer, and an electron blocking layer. In some embodiments, the light emitting device layer 13 may further include at least one of an electron transport layer and an electron injection layer.

[0033] For example, in a specific embodiment, as shown in FIG2 , the light-emitting device layer 13 may further include a hole transport layer 134, an electron transport layer 136, an electron injection layer 137, and a dimming layer 135, but is not limited thereto. The materials for the hole transport layer 134, the electron transport layer 136, the electron injection layer 137, and the dimming layer 135 may be conventional materials in the prior art and are not described in detail herein.

[0034] The hole transport layer 134, electron transport layer 136, and electron injection layer 137 are common layers. The hole transport layer 134 is located between the second transparent anode layer 1316 and the light-emitting layer 132, and is located on the first transparent anode 1317, the second transparent anode 1318, and the third transparent anode 1319. The electron transport layer 136 is located between the light-emitting layer 132 and the cathode layer 133, and is located on the first light-emitting layer 1321, the second light-emitting layer 1322, and the third light-emitting layer 1323. The electron injection layer 137 is located between the electron transport layer 136 and the cathode layer 133.

[0035] The dimming layer 135 is used to adjust the color coordinates of the light emitted by the display panel 100. The dimming layer 135 is located between the hole transport layer 134 and the light-emitting layer 132. The dimming layer 135 includes a first dimming unit 1351, a second dimming unit 1352, and a third dimming unit 1353, which are spaced apart from each other. The thickness of the dimming layer 135 is greater than or equal to 1 angstrom and less than or equal to 20 angstroms.

[0036] The first dimming cell 1351 is located between the first light-emitting layer 1321 and the hole transport layer 134, and the orthographic projection of the first dimming cell 1351 on the substrate layer 11 overlaps with the orthographic projection of the first light-emitting layer 1321 on the substrate layer 11. The second dimming cell 1352 is located between the second light-emitting layer 1322 and the hole transport layer 134, and the orthographic projection of the second dimming cell 1352 on the substrate layer 11 overlaps with the orthographic projection of the second light-emitting layer 1322 on the substrate layer 11. The third dimming cell 1353 is located between the third light-emitting layer 1323 and the hole transport layer 134, and the orthographic projection of the third dimming cell 1353 on the substrate layer 11 overlaps with the orthographic projection of the third light-emitting layer 1323 on the substrate layer 11.

[0037] In some embodiments, when the first wavelength λ1 is greater than the third wavelength λ3, and the third wavelength λ3 is greater than the second wavelength λ2, the thickness of the first dimming cell 1351 is greater than the thickness of the third dimming cell 1353, and the thickness of the third dimming cell 1353 is greater than the thickness of the second dimming cell 1352. In this way, the dimming layer 135 is used to adjust the color coordinates of light of the first wavelength λ1, the second wavelength λ2, and the third wavelength λ3. Dimming cells of different thicknesses are also used to form different cavity lengths to match light of different wavelengths. This improves the transmittance of light of the first wavelength λ1, the second wavelength λ2, and the third wavelength λ3 emitted from the light-emitting device layer 13.

[0038] It should be noted that, in the present application, the thickness refers to the dimension in the direction from the base layer to the light-emitting device layer.

[0039] The thin-film encapsulation layer 15 is located on the side of the light-emitting device layer 13 away from the base layer 11. This layer isolates the light-emitting device layer 13 from moisture and oxygen, reducing the risk of moisture and oxygen intrusion into the light-emitting device layer 13. The thin-film encapsulation layer 15 includes a first inorganic insulating layer, an organic insulating layer, and a second inorganic insulating layer. The organic insulating layer is disposed between the first and second inorganic insulating layers. The materials of the first and second inorganic insulating layers include at least one of silicon nitride, silicon oxide, and silicon oxynitride. The material of the organic layer includes at least one of polyacrylate and polysilane.

[0040] The capping layer 14 (CPL) is disposed between the cathode layer 133 and the thin-film encapsulation layer 15 and contacts the cathode layer 133. The refractive index of the capping layer 14 is greater than that of the cathode layer 133. When visible light emitted by the light-emitting device layer 13 enters the capping layer 14 from the cathode layer 133, due to the higher refractive index of the capping layer 14, the visible light is incident from the optically less dense medium to the optically denser medium. This allows more visible light to enter the capping layer 14, which helps improve the light extraction efficiency of the light emitted by the light-emitting device layer 13. Therefore, the capping layer 14 serves to improve the light extraction efficiency of the light-emitting device layer 13.

[0041] In some embodiments, the thickness of the cover layer 14 is greater than or equal to 1 nanometer and less than or equal to 100 nanometers. Therefore, the thickness of the cover layer 14 is not only relatively thick, but also has a wide adjustable range of thickness.

[0042] In some embodiments, the refractive index of the cover layer 14 is greater than or equal to 1.6 and less than or equal to 1.9. Alternatively, the refractive index of the cover layer 14 is greater than or equal to 1.65 and less than or equal to 1.85. Alternatively, the refractive index of the cover layer 14 is greater than or equal to 1.7 and less than or equal to 1.8.

[0043] In some embodiments, the cover layer 14 may include a high-refractive-index organic material. High-refractive-index organic materials may include hole-transporting materials and electron-transporting materials commonly used in organic light-emitting diodes. The cover layer 14 may also include an inorganic material. For example, the cover layer 14 may include tris(8-hydroxyquinoline)aluminum (Alq3), or alternatively, the cover layer 14 may include ZnSe.

[0044] The cover layer 14 includes a first cover unit 141 , a second cover unit 142 , and a third cover unit 143 .

[0045] In some embodiments, at least two adjacent ones of the first covering unit 141, the second covering unit 142, and the third covering unit 143 can be arranged adjacent to each other and spaced apart. This arrangement reduces the risk of color cross-talk. In a specific embodiment, any two of the first covering unit 141, the second covering unit 142, and the third covering unit 143 are spaced apart.

[0046] In other embodiments, at least two adjacent ones of the first covering unit 141 , the second covering unit 142 , and the third covering unit 143 may be adjacent to and in contact with each other. This configuration can reduce the difficulty of manufacturing the covering layer 14 .

[0047] The orthographic projection of the first covering unit 141 on the substrate 11 overlaps with the orthographic projection of the first light-emitting layer 1321 on the substrate 11, meaning that the first covering unit 141 is positioned corresponding to the first light-emitting layer 1321. This arrangement improves the light extraction efficiency of the first wavelength λ1. In some embodiments, the orthographic projection of the first light-emitting layer 1321 on the substrate 11 lies within the orthographic projection of the first covering unit 141 on the substrate 11. This arrangement allows more light emitted by the first light-emitting layer 1321 to pass through the first covering unit 141, thereby improving the light extraction efficiency of the first wavelength λ1.

[0048] The orthographic projection of the second covering unit 142 on the substrate 11 overlaps with the orthographic projection of the second light-emitting layer 1322 on the substrate 11, meaning that the second covering unit 142 is positioned corresponding to the second light-emitting layer 1322. This arrangement improves the light extraction efficiency of the second wavelength λ2. In some embodiments, the orthographic projection of the second light-emitting layer 1322 on the substrate 11 lies within the orthographic projection of the second covering unit 142 on the substrate 11. This arrangement allows more light emitted by the second light-emitting layer 1322 to pass through the second covering unit 142, thereby improving the light extraction efficiency of the second wavelength λ2.

[0049] The orthographic projection of the third covering unit 143 on the substrate 11 overlaps with the orthographic projection of the third light-emitting layer 1323 on the substrate 11, meaning that the third covering unit 143 is positioned corresponding to the third light-emitting layer 1323. This arrangement improves the light extraction efficiency of the third wavelength λ3. In some embodiments, the orthographic projection of the third light-emitting layer 1323 on the substrate 11 lies within the orthographic projection of the third covering unit 143 on the substrate 11. This arrangement allows more light emitted by the third light-emitting layer 1323 to pass through the third covering unit 143, thereby improving the light extraction efficiency of the third wavelength λ3.

[0050] As shown in FIG2 , light emitted by the first light-emitting layer 1321 is emitted toward the reflective anode layer 1315. The light of the first wavelength λ1 emitted toward the reflective anode layer 1315 is reflected by the reflective anode layer 1315, then passes through the first transparent anode 1317, and then through other film layers before being emitted. Therefore, the light emitted by the first light-emitting layer 1321 passes through the first transparent anode 1317, the film layer between the first transparent anode 1317 and the cathode layer 133, the cathode layer 133, and the first cover unit 141. The first transparent anode 1317, the cathode layer 133, the film layer between the first transparent anode 1317 and the cathode layer 133, and the first cover unit 141 constitute the first microcavity structure 201. The microcavity length of the first microcavity structure 201 is equal to the sum of the thickness A1 of the first transparent anode 1317, the thickness C of the cathode layer 133, the sum B1 of the thickness of the film layer between the first transparent anode 1317 and the cathode layer 133, and the thickness d1 of the first cover unit 141.

[0051] Similarly, light emitted by the second light-emitting layer 1322 at a second wavelength λ2 passes through the second transparent anode 1318, the cathode layer 133, the film layer located between the second transparent anode 1318 and the cathode layer 133, and the second covering unit 142. The second transparent anode 1318, the cathode layer 133, the film layer located between the second transparent anode 1318 and the cathode layer 133, and the second covering unit 142 constitute a second microcavity structure 202. The microcavity length of the second microcavity structure 202 is equal to the sum of the thickness A2 of the second transparent anode 1318, the thickness C of the cathode layer 133, the sum B2 of the thickness of the film layer located between the second transparent anode 1318 and the cathode layer 133 (the sum of the thickness B21 and the thickness B22 in FIG. 2 ), and the thickness d2 of the second covering unit 142.

[0052] Light emitted by the third light-emitting layer 1323 at a third wavelength λ3 passes through the third transparent anode 1319, the cathode layer 133, the film layer located between the third transparent anode 1319 and the cathode layer 133, and the third cover unit 143. The third transparent anode 1319, the cathode layer 133, the film layer located between the third transparent anode 1319 and the cathode layer 133, and the third cover unit 143 constitute a third microcavity structure 203. The microcavity length of the third microcavity structure 203 is equal to the sum of the thickness A3 of the third transparent anode 1319, the thickness C of the cathode layer 133, the thickness B3 of the film layer located between the third transparent anode 1319 and the cathode layer 133 (the sum of the thickness B31 and the thickness B32 in FIG. 2 ), and the thickness d3 of the third cover unit 143.

[0053] In some embodiments, the thickness A1 of the first transparent anode 1317, the thickness A2 of the second transparent anode 1318, and the thickness A3 of the third transparent anode 1319 can be equal. In this manner, the first transparent anode 1317, the second transparent anode 1318, and the third transparent anode 1319 can be manufactured in the same process, simplifying the manufacturing process of the second transparent anode layer 1316.

[0054] In other embodiments, the thickness A1 of the first transparent anode 1317, the thickness A3 of the third transparent anode 1319, and the thickness A2 of the second transparent anode 1318 can decrease successively, which is beneficial to the microcavity length of the first microcavity structure 201, the microcavity length of the third microcavity structure 203, and the microcavity length of the second microcavity structure 202 decreasing successively, thereby improving the light extraction efficiency of the first wavelength λ1, the third wavelength λ3, and the second wavelength λ2.

[0055] In some embodiments, the sum B1 of the thickness of the film layers between the first transparent anode 1317 and the cathode layer 133, the sum B3 of the thickness of the film layers between the third transparent anode 1319 and the cathode layer 133, and the sum B2 of the thickness of the film layers between the second transparent anode 1318 and the cathode layer 133 can decrease in sequence. This configuration facilitates the sequential decrease in the microcavity length of the first microcavity structure 201, the microcavity length of the third microcavity structure 203, and the microcavity length of the second microcavity structure 202, thereby improving the light extraction efficiency of the first wavelength λ1, the third wavelength λ3, and the second wavelength λ2.

[0056] It should be noted that the shared layers, such as the hole transport layer 134, electron transport layer 136, and electron injection layer 137, have substantially uniform thicknesses. Therefore, whether B1, B2, and B3 are the same depends primarily on the non-shared layers, such as the light-emitting layer 132 and the dimming layer 135.

[0057] In the present application, at least a portion of the first cover unit 141 is thicker than at least a portion of the second cover unit 142. At least a portion of the third cover unit 143 is thicker than at least a portion of the second cover unit 142. Thus, the thicker first cover unit 141 is provided for light of the longer first wavelength λ1 emitted by the first light-emitting layer 1321. The thinner second cover unit 142 is provided for light of the shorter second wavelength λ2 emitted by the second light-emitting layer 1322. The thicker third cover unit 143 is provided for light of the third wavelength λ3 emitted by the third light-emitting layer 1323. Therefore, the thicknesses of the first covering unit 141, the third covering unit 143, and the second covering unit 142 are reduced in sequence with respect to the first wavelength λ1, the third wavelength λ3, and the second wavelength λ2, which is beneficial for the microcavity length of the first microcavity structure 201, the microcavity length of the third microcavity structure 203, and the microcavity length of the second microcavity structure 202 to decrease in sequence, further improving the light extraction efficiency of the first wavelength λ1, the third wavelength λ3, and the second wavelength λ2.

[0058] It should be noted that when the first wavelength λ1 is greater than the third wavelength λ3, the thickness of at least a portion of the first covering unit 141 is greater than the thickness of at least a portion of the third covering unit 143. When the first wavelength λ1 is less than the third wavelength λ3, the thickness of at least a portion of the first covering unit 141 is less than the thickness of at least a portion of the third covering unit 143. Therefore, the thickness of the third covering unit 143 and the thickness of the first covering unit 141 are set accordingly based on the relative size between the first wavelength λ1 and the third wavelength λ3.

[0059] In one specific embodiment, as shown in FIG1 , the first covering unit 141 includes a first middle portion 1411 and a first edge portion 1412, with the first edge portion 1412 disposed around the first middle portion 1411. The orthographic projection of the first light-emitting layer 1321 on the substrate 11 is located within the orthographic projection of the first middle portion 1411 on the substrate 11. The thickness of the first middle portion 1411 is greater than the thickness of the first edge portion 1412. The thickness d1 of the first covering unit 141 is the thickness of the first middle portion 1411 and is also the maximum thickness of the first covering unit 141.

[0060] The second covering unit 142 includes a second middle portion 1421 and a second edge portion 1422, with the second edge portion 1422 disposed around the second middle portion 1421. The orthographic projection of the second light-emitting layer 1322 on the substrate 11 is located within the orthographic projection of the second middle portion 1421 on the substrate 11. The thickness of the second middle portion 1421 is greater than the thickness of the second edge portion 1422. The thickness of the second middle portion 1421 is less than the thickness of the first middle portion 1411. The thickness of the second edge portion 1422 is less than the thickness of the first edge portion 1412. The thickness d2 of the second covering unit 142 is equal to the thickness of the second middle portion 1421 and is also the maximum thickness of the second covering unit 142.

[0061] The third covering unit 143 includes a third middle portion 1431 and a third edge portion 1432. The third edge portion 1432 is disposed around the third middle portion 1431. The orthographic projection of the third light-emitting layer 1323 on the substrate 11 is located within the orthographic projection of the third middle portion 1431 on the substrate 11. The thickness of the third middle portion 1431 is greater than the thickness of the third edge portion 1432. The thickness of the third middle portion 1431 is greater than the thickness of the second middle portion 1421 and less than the thickness of the first middle portion 1411. The thickness of the third edge portion 1432 is greater than the thickness of the second edge portion 1422 and less than the thickness of the first edge portion 1412. The thickness d3 of the third covering unit 143 is equal to the thickness of the third middle portion 1431 and is also the maximum thickness of the third covering unit 143.

[0062] Three different fine metal masks (FMMs) can be used to form the first, second, and third covering units 141, 142, and 143, respectively, with different thicknesses. During the process of forming the first, second, and third covering units 141, 142, and 143 using the fine metal masks as masks, shadow effects can result in thinner first, second, and third edge portions 1412, 1422, and 1432, respectively, as shown in Figure 1. In other words, the first, second, and third edge portions 1412, 1422, and 1432 are formed due to process factors.

[0063] In combination with the above, it can be seen that in the present application, for light of different wavelengths, the thickness of the covering layer 14 is designed differently to form different microcavity lengths. For light with a larger wavelength, the thickness of the covering layer 14 is larger to form a larger microcavity length. For example, for red light with a longer wavelength, the thickness d1 of the first covering unit 141 is thicker. For light with a smaller wavelength, the thickness of the covering layer 14 is smaller to form a smaller microcavity length. For example, for blue light with a smaller wavelength, the thickness d2 of the second covering unit 142 is thinner. For larger microcavity lengths, they match relatively larger wavelengths, and shorter microcavity lengths match relatively smaller wavelengths, thereby improving the overall light output rate of the light emitted by the display panel. The higher the overall light output rate, the smaller the current of the display panel 100 when displaying a bright picture, thereby reducing the power consumption of the display device 200 when displaying a bright picture, and reducing heat to improve the heating problem.

[0064] Specifically, when both the first wavelength λ1 and the third wavelength λ3 are greater than the second wavelength λ2, the thickness of at least a portion of the third cover unit 143 and the thickness of at least a portion of the first cover unit 141 are both greater than the thickness of at least a portion of the second cover unit 142. For the first wavelength λ1 and the third wavelength λ3, the thickness of the cover unit corresponding to the larger one is thicker. In this way, the microcavity length of the first microcavity structure 201 including the first cover unit 141 matches the first wavelength λ1, the microcavity length of the second microcavity structure 202 including the second cover unit 142 matches the second wavelength λ2, and the microcavity length of the third microcavity structure 203 including the third cover unit 143 matches the third wavelength λ3. The light extraction efficiency of the first wavelength λ1, the second wavelength λ2, and the third wavelength λ3 are all improved. The overall light extraction efficiency of the display panel is improved, and the current of the display panel 100 when displaying a bright image is reduced, thereby reducing the power consumption of the display device 200 when displaying a bright image and reducing heat, thereby improving the heating problem.

[0065] It should be noted that in related technologies, the thickness of the functional film layers between the anode and cathode layers is differentiated to improve light extraction efficiency. However, because some functional film layers between the anode and cathode layers are relatively thin and have other inherent functions, such as the thin light-emitting layer that is used for light emission, adjusting the thickness of these functional film layers may significantly affect the efficiency and color of light generated by the light-emitting device layer, potentially adversely affecting the display effect.

[0066] In the present application, however, since the cover layer 14 is located on the light-emitting side of the light-emitting device layer 13, its function is to improve the light extraction efficiency, and the thickness of the cover layer 14 can be varied over a wide range. To improve the light extraction efficiency of light of different wavelengths, the thickness of the cover layer 14 is designed differently. This improves the overall light extraction efficiency of the display panel to reduce power consumption while minimizing the adverse effects on the optical performance of the display panel 100.

[0067] In some embodiments, the shape of the first covering unit 141 can be the same as or similar to the shape of at least one of the first light-emitting layer 1321 and the first dimming unit 1351. In a specific embodiment, the shape of the first covering unit 141, the shape of the first light-emitting layer 1321, and the shape of the first dimming unit 1351 are the same as or similar. With this arrangement, the first covering unit 141 can be manufactured using the mask used to manufacture the first light-emitting layer 1321 and the first dimming unit 1351, which can save the number of masks used to manufacture the display panel and reduce the cost of manufacturing the display panel. The above-mentioned shape refers to a planar shape. For example, the shape of the first covering unit 141 is the shape corresponding to the orthographic projection of the first covering unit 141 on the base layer 11. The shapes of the first light-emitting layer 1321 and the first dimming unit 1351 also refer to planar shapes.

[0068] In some embodiments, the shape of the second covering unit 142 can be the same as or similar to the shape of at least one of the second light-emitting layer 1322 and the second dimming unit 1352. In a specific embodiment, the shapes of the second covering unit 142, the second light-emitting layer 1322, and the second dimming unit 1352 are the same as or similar. With this configuration, the second covering unit 142 can be manufactured using the same mask used to manufacture the shape of the second light-emitting layer 1322 and the second dimming unit 1352, which can reduce the number of masks used to manufacture the display panel and reduce the cost of manufacturing the display panel. The shape of the second covering unit 142 refers to the shape corresponding to the orthographic projection of the second covering unit 142 on the substrate layer 11. The shapes of the second light-emitting layer 1322 and the second dimming unit 1352 also refer to planar shapes.

[0069] In some embodiments, the shape of the third covering unit 143 can be the same as or similar to the shape of at least one of the third light-emitting layer 1323 and the third dimming unit 1353. In a specific embodiment, the shapes of the third covering unit 143, the third light-emitting layer 1323, and the third dimming unit 1353 are the same as or similar. With this configuration, the third covering unit 143 can be manufactured using the same mask used to manufacture the shape of the third light-emitting layer 1323 and the third dimming unit 1353, which can reduce the number of masks used to manufacture the display panel and reduce the cost of manufacturing the display panel. The shape of the third covering unit 143 refers to the shape corresponding to the orthographic projection of the third covering unit 143 on the substrate layer 11. The shapes of the third light-emitting layer 1323 and the third dimming unit 1353 also refer to planar shapes.

[0070] In this application, "same shape" means completely identical. For example, the first cover unit 141 and the first light-emitting layer 1321 are both quadrilaterals. "Similar shape" means that the two shapes tend to be the same. Similar shape can apply to situations where two identical shapes have slight differences due to manufacturing process reasons. For example, the first light-emitting layer 1321 is square, and the first cover unit 141 is a square with rounded corners.

[0071] In some embodiments, when the light of the first wavelength λ1 is red light, the thickness of the first covering unit 141 is greater than or equal to 600 angstroms and less than or equal to 700 angstroms. Alternatively, the thickness of the first covering unit 141 is greater than or equal to 620 angstroms and less than or equal to 680 angstroms. Alternatively, the thickness of the first covering unit 141 is greater than or equal to 620 angstroms and less than or equal to 650 angstroms. This configuration ensures that the thickness of the first covering unit 141 is relatively thick to increase the microcavity length of the first microcavity structure 201, while shortening the preparation time of the first covering unit 141 and improving the transmittance of the light of the first wavelength λ1 passing through the first covering unit 141.

[0072] In some embodiments, when the light of the second wavelength λ2 is blue light, the thickness of the second cover unit 142 is greater than or equal to 450 angstroms and less than or equal to 530 angstroms. Alternatively, the thickness of the second cover unit 142 is greater than or equal to 460 angstroms and less than or equal to 520 angstroms. Alternatively, the thickness of the second cover unit 142 is greater than or equal to 480 angstroms and less than or equal to 510 angstroms. This configuration ensures that the thickness of the second cover unit 142 is relatively thin to reduce the microcavity length of the second microcavity structure 202, while also improving the problem of the second cover unit 142 being too thin, thereby increasing its manufacturing difficulty.

[0073] In some embodiments, when the light of the third wavelength λ3 is green light, the thickness of the third cover unit 143 is greater than or equal to 540 angstroms and less than or equal to 600 angstroms. Alternatively, the thickness of the third cover unit 143 is greater than or equal to 550 angstroms and less than or equal to 590 angstroms. Alternatively, the thickness of the third cover unit 143 is greater than or equal to 560 angstroms and less than or equal to 585 angstroms. This configuration ensures that the thickness of the third cover unit 143 is moderate so that the microcavity length of the third microcavity structure 203 matches the light of the third wavelength λ3, while reducing the difficulty of manufacturing the third cover unit 143.

[0074] In some embodiments, the difference in maximum thickness between any two of the first cover unit 141, the second cover unit 142, and the third cover unit 143 is greater than or equal to 20 angstroms and less than or equal to 300 angstroms. Alternatively, the difference in maximum thickness between any two of the first cover unit 141, the second cover unit 142, and the third cover unit 143 is greater than or equal to 30 angstroms and less than or equal to 200 angstroms. Alternatively, the difference in maximum thickness between any two of the first cover unit 141, the second cover unit 142, and the third cover unit 143 is greater than or equal to 40 angstroms and less than or equal to 150 angstroms. If the difference is too small, it becomes more difficult to differentiate the microcavity lengths of the first microcavity structure 201, the microcavity lengths of the second microcavity structure 202, and the microcavity lengths of the third microcavity structure 203, and it becomes more difficult to control the thickness of different cover units. If the difference is too large, it will result in a longer manufacturing time for thicker cover units, and greater difficulty in manufacturing thinner cover units, increasing the difficulty of process manufacturing.

[0075] In some embodiments, the difference in maximum thickness between the first cover unit 141 and the third cover unit 143 is less than the difference in maximum thickness between the third cover unit 143 and the second cover unit 142. This arrangement allows for a relatively small difference in thickness between the first cover unit 141 and the third cover unit 143, while a relatively large difference in thickness between the third cover unit 143 and the second cover unit 142, thereby further improving the blue light extraction efficiency. Alternatively, the difference in maximum thickness between the first cover unit 141 and the third cover unit 143 is greater than or equal to 30 angstroms and less than or equal to 60 angstroms; and the difference in maximum thickness between the third cover unit 143 and the second cover unit 142 is greater than or equal to 60 angstroms and less than or equal to 100 angstroms.

[0076] In some embodiments, the first covering unit 141, the second covering unit 142, and the third covering unit 143 are made of the same material. This configuration allows the three covering units 141, 142, and 143 to be formed using the same material and substantially the same process conditions. By controlling the preparation time of the three covering units to be different, the first covering unit 141, the second covering unit 142, and the third covering unit 143 can be prepared with different thicknesses. This simplifies the preparation process of the covering layer 14.

[0077] In some embodiments, as shown in FIG1 , the display panel 100 further includes a filter layer 18. The filter layer 18 is located on a side of the thin film encapsulation layer 15 away from the light emitting device layer 13. The filter layer 18 includes a black matrix 181 and a first color resist unit 182, a second color resist unit 183, and a third color resist unit 184 of different colors.

[0078] The black matrix 181 includes a plurality of openings 181 a, and the first color resist unit 182, the second color resist unit 183, and the third color resist unit 184 are respectively disposed in the plurality of openings 181 a. The orthographic projections of the plurality of openings 181 a on the base layer 11 overlap with the orthographic projections of the first light-emitting layer 1321, the second light-emitting layer 1322, and the third light-emitting layer 1323 on the base layer 11.

[0079] The orthographic projection of the first color resist unit 182 on the base layer 11 overlaps with the orthographic projections of the first light-emitting layer 1321 and the first covering unit 141 on the base layer 11. The color of the first color resist unit 182 is the same as the color of the light of the first wavelength λ1. When the light of the first wavelength λ1 is red light, the first color resist unit 182 is a red color resist.

[0080] The orthographic projection of the second color resist unit 183 on the base layer 11 overlaps with the orthographic projections of the second light-emitting layer 1322 and the second covering unit 142 on the base layer 11. The color of the second color resist unit 183 is the same as the color of the light of the second wavelength λ2. When the light of the second wavelength λ2 is blue light, the second color resist unit 183 is a blue color resist.

[0081] The orthographic projection of the third color resist unit 184 on the base layer 11 overlaps with the orthographic projections of the third light-emitting layer 1323 and the third covering unit 143 on the base layer 11. The color of the third color resist unit 184 is the same as the color of the light of the third wavelength λ3. When the light of the third wavelength λ3 is green, the third color resist unit 184 is a green color resist.

[0082] In some embodiments, the first wavelength λ1 includes a first maximum transmittance wavelength λ a The first maximum transmittance wavelength λ a The transmittance of the light of the first wavelength λ1 passing through the first color resist unit 182 is the maximum transmittance of the light of the first wavelength λ1 passing through the first color resist unit 182. The thickness d1 of the first covering unit 141 satisfies the formula A1 is the thickness of the first transparent anode 1317. B1 is the sum of the thicknesses of the film layers between the first transparent anode 1317 and the cathode layer 133. C is the thickness of the cathode layer 133. m1 is an integer greater than or equal to 1. Thus, the thickness d1 of the first covering unit 141 is related to the first maximum transmittance wavelength λ. aThe thickness design of the thickness d1 of the first covering unit 141 can increase the first maximum transmittance wavelength λ a The transmittance through the first microcavity structure 201, combined with the first maximum transmittance wavelength λ a The transmittance of the light of the first wavelength λ1 passing through the first color resist unit 182 is the maximum transmittance of the light of the first wavelength λ1 passing through the first color resist unit 182. The first maximum transmittance wavelength λ emitted by the display panel 100 is a The light output rate is significantly improved. The first maximum transmittance wavelength λ a The light extraction rate is improved, which can reduce the power consumption when displaying a bright picture, thereby reducing the power consumption of the display device when displaying a bright picture, and reducing heat to improve the heating problem.

[0083] In some embodiments, the second wavelength λ2 includes a second maximum transmittance wavelength λ b , the second maximum transmittance wavelength λ b The transmittance of light of the second wavelength λ2 passing through the second color resist unit 183 is the maximum transmittance of light of the second wavelength λ2 passing through the second color resist unit 183. The thickness d2 of the second covering unit 142 satisfies the formula , A2 is the thickness of the second transparent anode 1318. B2 is the sum of the thicknesses of the film layers between the second transparent anode 1318 and the cathode layer 133. m2 is an integer greater than or equal to 1. C is the thickness of the cathode layer 133. Thus, the thickness d2 of the second covering unit 142 is related to the second maximum transmittance wavelength λ. b The design of the thickness d2 of the second covering unit 142 can increase the second maximum transmittance wavelength λ b The transmittance through the second microcavity structure 202, combined with the second maximum transmittance wavelength λ b The transmittance of the light of the second wavelength λ2 passing through the second color resist unit 183 is the maximum transmittance of the light of the second wavelength λ2 passing through the second color resist unit 183. The second maximum transmittance wavelength λ emitted by the display panel 100 is b The light output rate is significantly improved. The second maximum transmittance wavelength λ b The light extraction rate is improved, which can reduce the power consumption when displaying a bright picture, thereby reducing the power consumption of the display device when displaying a bright picture, and reducing heat to improve the heating problem.

[0084] In some embodiments, the third wavelength λ3 includes a third maximum transmittance wavelength λc. The transmittance of light with the third maximum transmittance wavelength λc passing through the third color resist unit 184 is the maximum transmittance of light with the third wavelength λ3 passing through the third color resist unit 184. The thickness d3 of the third covering unit 143 satisfies the formula , A3 is the thickness of the third transparent anode 1319. B3 is the sum of the thicknesses of the film layers located between the third transparent anode 1319 and the cathode layer 133. m3 is an integer greater than or equal to 1. In this way, the thickness d3 of the third covering unit 143 is related to the third maximum transmittance wavelength λc. The design of the thickness d3 of the third covering unit 143 can improve the transmittance of light with the third maximum transmittance wavelength λc through the third microcavity structure 203, combined with the transmittance of light with the third maximum transmittance wavelength λc through the third color resist unit 184 being the maximum transmittance of light with the third wavelength λ3 through the third color resist unit 184. The light output rate of the light with the third maximum transmittance wavelength λc emitted by the display panel 100 is significantly improved. The improvement of the light output rate of the light with the third maximum transmittance wavelength λc can reduce the power consumption when displaying a bright picture, thereby reducing the power consumption of the display device when displaying a bright picture, and reducing heat to improve the heating problem.

[0085] It can be seen that in this application, the first maximum transmittance wavelength λ corresponding to the maximum transmittance passing through the first color resist unit 182 is a , the second maximum transmittance wavelength λ corresponding to the maximum transmittance passing through the second color resist unit 183 b and the third maximum transmittance wavelength λ corresponding to the maximum transmittance through the third color-resistance unit 184 c , respectively set the thickness of the first covering unit 141, the second covering unit 142 and the third covering unit 143 to further increase the first maximum transmittance wavelength λ a、 The second maximum transmittance wavelength λ b and the third maximum transmittance wavelength λ c penetration rate.

[0086] In some embodiments, m1, m2, and m3 may be the same. For example, m1, m2, and m3 are all equal to 2. In other embodiments, one of m1, m2, and m3 may be different from the other two. In other embodiments, m1, m2, and m3 may also be different from each other.

[0087] In some embodiments, m1, m2, and m3 are all less than or equal to 3. Optionally, m1, m2, and m3 are all less than or equal to 2. In this way, the microcavity length of the first microcavity structure 201 can better match the thickness of the film layer constituting the first microcavity structure 201, the microcavity length L2 of the second microcavity structure 202 can better match the thickness of the film layer constituting the second microcavity structure 202, and the microcavity length L3 of the third microcavity structure 203 can better match the thickness of the film layer constituting the third microcavity structure 203. In this way, while improving the light extraction efficiency of the first wavelength λ1, the second wavelength λ2, and the third wavelength λ3, the manufacturing difficulty of forming each film layer of the first microcavity structure 201, each film layer of the second microcavity structure 202, and each film layer of the third microcavity structure 203 is reduced, and the functions of each film layer of the first microcavity structure 201, each film layer of the second microcavity structure 202, and each film layer of the third microcavity structure 203 are guaranteed, thereby ensuring the overall display effect of the display panel.

[0088] In some embodiments, at least one of the maximum transmittance of light of the first wavelength λ1 through the first color-resistance unit 182 and the maximum transmittance of light of the third wavelength λ3 through the third color-resistance unit 184 is less than the maximum transmittance of light of the second wavelength λ2 through the second color-resistance unit 183. This configuration significantly improves the maximum transmittance of light of the second wavelength λ2, i.e., the maximum transmittance of blue light, by combining the differentiated thickness design of the cover layer with the design of the filter layer 18, thereby reducing the current required for blue light emission and, consequently, the power consumption required by the display panel during display.

[0089] It should be noted that during display, the green and red light-emitting layers have higher luminous efficiency, requiring relatively low currents to emit green and red light. The blue light-emitting layer has lower luminous efficiency, requiring higher currents to emit blue light. Therefore, this application utilizes the aforementioned differentiated cover layer design, combined with the design of the filter layer 18, to improve the blue light extraction efficiency, thereby reducing the current required for blue light emission and, consequently, the power consumption required by the display panel.

[0090] In some embodiments, the first maximum transmittance wavelength λ a Greater than or equal to 620 nanometers and less than or equal to 640 nanometers, the first maximum transmittance wavelength λ a The transmittance through the first color-resistance unit 182 is greater than or equal to 45%. In this way, the first maximum transmittance wavelength λ is guaranteed. a The light extraction rate of the red light emitted by the display panel 100 is ensured.

[0091] Optionally, the first maximum transmittance wavelength λ a Greater than or equal to 625 nanometers and less than or equal to 635 nanometers.

[0092] Optionally, the first maximum transmittance wavelength λ a The transmittance of light passing through the first color resist unit 182 is greater than or equal to 50% and less than or equal to 85%. a The transmittance of light passing through the first color resist unit 182 is greater than or equal to 60% and less than or equal to 75%. In this way, the first maximum transmittance wavelength λ is further increased. a The light output rate of the red light is improved, the current required to emit red light is reduced, and the power consumption required to emit blue light is reduced, thereby taking into account the brightness and power consumption of the red light.

[0093] In some embodiments, the second maximum transmittance wavelength λ b Greater than or equal to 420 nanometers and less than or equal to 450 nanometers, the second maximum transmittance wavelength λ b The transmittance of the light passing through the second color-resistance unit 183 is greater than or equal to 45%. In this way, the second maximum transmittance wavelength λ is guaranteed. b The light extraction rate of the blue light emitted by the display panel 100 is ensured.

[0094] Optionally, the second maximum transmittance wavelength λ b is greater than or equal to 425 nanometers and less than or equal to 440 nanometers. Optionally, the second maximum transmittance wavelength λ b Greater than or equal to 428 nanometers and less than or equal to 435 nanometers.

[0095] Optionally, the second maximum transmittance wavelength λ b The transmittance of light passing through the second color-resistance unit is greater than or equal to 60% and less than or equal to 95%. b The transmittance of light passing through the second color-resistance unit is greater than or equal to 65% and less than or equal to 90%. In this way, the second maximum transmittance wavelength λ is further increased. b While increasing the light output rate of blue light, it reduces the current required to emit blue light, thereby reducing the power consumption required to emit blue light, thereby taking into account the brightness and power consumption of blue light.

[0096] In some embodiments, the third maximum transmittance wavelength λ c Greater than or equal to 495 nanometers and less than or equal to 530 nanometers, the third maximum transmittance wavelength λ c The transmittance of the light passing through the third color-resistance unit 184 is greater than or equal to 45%. In this way, the third maximum transmittance wavelength λ is guaranteed. c The light extraction rate of the green light emitted by the display panel 100 is ensured.

[0097] Optionally, the third maximum transmittance wavelength λ c Greater than or equal to 495 nanometers and less than or equal to 530 nanometers.

[0098] Optionally, the third maximum transmittance wavelength λ c The transmittance of light passing through the second color-resistance unit is greater than or equal to 50% and less than or equal to 85%. a The transmittance of light passing through the first color-resistance unit is greater than or equal to 60% and less than or equal to 75%. In this way, the third maximum transmittance wavelength λ is further increased. c While increasing the light output rate of green light, it also reduces the current required to emit green light, thereby reducing the power consumption required to emit green light, thereby taking into account both the brightness and power consumption of green light.

[0099] Please refer to Figure 3, which shows the spectral test results of the transmittance of the first color-resistance unit, the second color-resistance unit, and the third color-resistance unit of the filter layer of the display panel of some embodiments provided by this application to light of different wavelengths. In Figure 3, B represents the transmittance of the second color-resistance unit (blue color-resistance) to light of different wavelengths, R represents the transmittance of the first color-resistance unit (red color-resistance) to light of different wavelengths, and G represents the transmittance of the third color-resistance unit (green color-resistance) to light of different wavelengths.

[0100] As shown in Figure 3 , in the present application, the second color-resistance unit 183 has the highest transmittance for blue light with a wavelength of 430 nanometers, and this maximum transmittance is greater than 70%. The third color-resistance unit 184 has the highest transmittance for green light with a wavelength of 520 nanometers, and this maximum transmittance is greater than 65% and less than or equal to 70%. The first color-resistance unit 182 has the highest transmittance for red light with a wavelength of 630 nanometers, and this maximum transmittance is greater than 50% and less than or equal to 60%. Therefore, the filter layer 18 of the present application has a high transmittance for the light emitted by the light-emitting layer 132.

[0101] In the present application, the design of the high-transmittance filter layer 18 , combined with the differentiated thickness design of the cover layer 14 and the maximum transmittance of the filter layer 18 for light of different wavelengths, can significantly improve the display brightness of the display panel 100 .

[0102] Specifically, the high-transmittance filter layer 18 of the present invention is designed with differentiated thicknesses of the cover layer 14. Experimental verification shows that, when the driving current corresponding to red light is 98 nA, the driving current corresponding to blue light is 118 nA, and the driving current corresponding to green light is 97 nA, the brightness of the red light emitted by the display panel 100 can reach as high as 197.02 nits, the brightness of the green light can reach as high as 540.46 nits, the brightness of the blue light can reach as high as 60.38 nits, and the brightness of the white light can reach as high as 864.9 nits.

[0103] In the related art, when the covering layer is a whole-layer design, that is, the thickness of the covering layer is a single thickness, when the driving current corresponding to red light is 98nA, the driving current corresponding to blue light is 118nA, and the driving current corresponding to green light is 97nA, the brightness of red light is 151nit, the brightness of blue light is 30nit, the brightness of green light is 415nit, and the brightness of white light is 508nit.

[0104] As can be seen, compared to related technologies, the high-transmittance filter layer 18 of the present application, combined with the differentiated thickness design of the cover layer 14, not only improves the brightness of red light, blue light, and green light, but also increases the brightness of white light by 70%. Furthermore, the brightness of blue light can be increased by nearly 100%.

[0105] In some embodiments of the present application, a filter layer 18 is used to replace the polarizer in related art, that is, a polarizer-less technology is used. While ensuring the contrast of the display panel 100, the filter layer 18 has a higher transmittance for the light emitted by the light-emitting device layer 13, thereby improving the light extraction efficiency of the display panel 100. In addition, since the different color resistances of the filter layer 18 have maximum transmittances for light of different specific wavelengths, the thicknesses of the first covering unit, the second covering unit, and the third covering unit are respectively set according to the specific wavelength corresponding to the maximum transmittance. This achieves a differentiated design of the covering layer 14, can significantly improve the light extraction efficiency of the display panel 100, and thus improve the display brightness of the display panel 100.

[0106] In some embodiments, the display panel 100 further includes a protective layer 16. The protective layer 16 is disposed between the cover layer 14 and the thin film encapsulation layer 15. During the formation of the thin film encapsulation layer 15, the protective layer 16 protects the cover layer 14. Materials for the protective layer 16 include, but are not limited to, inorganic materials such as lithium fluoride.

[0107] In some embodiments, the display panel 100 further includes a touch layer 17, which is disposed between the thin film encapsulation layer 15 and the filter layer 18. The touch layer 17 can be a mutual capacitance touch layer or a self-capacitive touch layer. The touch layer 17 includes touch electrodes. The orthographic projection of the touch electrodes on the base layer 11 overlaps with the orthographic projection of the black matrix 181 on the base layer 11, thereby reducing the reflectivity of the touch electrodes to light and improving the display quality of the display panel 100.

[0108] In some embodiments, the display panel 100 further includes a planarization layer 19, which covers the surface of the filter layer 18 away from the base layer 11. The planarization layer 19 performs a planarization function, is light-transmissive, and includes an organic material.

[0109] The display panel 100 further includes a driving circuit layer 121, which is disposed between the light-emitting device layer 13 and the substrate layer 11. An anode layer 131 is disposed on the driving circuit layer 121. The driving circuit layer 121 includes a plurality of driving circuits, each of which is connected to a first anode 1311, a second anode 1312, and a third anode 1313, respectively.

[0110] As shown in FIG1 , the display panel 100 further includes a pixel definition layer 122 positioned above the anode layer 131 and the driver circuit layer 121. The pixel definition layer 122 includes a plurality of pixel openings 122 a. The plurality of pixel openings 122 a expose portions of the first anode 1311, the second anode 1312, and the third anode 1313. The first light-emitting layer 1321, the second light-emitting layer 1322, and the third light-emitting layer 1323 are respectively disposed within the plurality of pixel openings 122 a.

[0111] In summary, for the display panel of the present application, the refractive index of the cover layer is greater than that of the cathode layer, which helps improve the light extraction efficiency of the light emitted by the light-emitting layer from the cathode layer to the cover layer. Furthermore, the first light-emitting layer emits light of a first wavelength λ1, and the second light-emitting layer emits light of a second wavelength λ2, where the first wavelength λ1 is greater than the second wavelength λ2. The orthographic projection of the first cover unit on the substrate overlaps with the orthographic projection of the first light-emitting layer on the substrate. The orthographic projection of the second cover unit on the substrate overlaps with the orthographic projection of the second light-emitting layer on the substrate. The thickness of at least a portion of the first cover unit is greater than the thickness of at least a portion of the second cover unit. In this arrangement, a thicker first cover unit is provided for the longer first wavelength λ1, and a thinner second cover unit is provided for the shorter second wavelength λ2. The thickness of the cover layers is designed differently for light of different wavelengths. The microcavity length of the microcavity structure including the first cover unit matches the first wavelength λ1, and the microcavity length of the microcavity structure including the second cover unit matches the second wavelength λ2, which helps further improve the light extraction efficiency of both the first and second wavelengths. The current of the display panel is reduced when displaying a bright picture, thereby reducing the power consumption of the display device when displaying a bright picture, and reducing the heat, thereby improving the heating problem.

[0112] Based on the same inventive concept, as shown in FIG4 , the present application further provides a display device 200 , which includes the display panel 100 of any of the above embodiments. The display device 200 can be applied to electronic devices such as mobile phones, tablet computers, and personal computers.

[0113] The description of the above embodiments is only used to help understand the technical solutions and core ideas of this application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein; and these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A display panel, wherein, Comprising: A base layer; A light-emitting device layer disposed on the base layer and including a transparent anode layer, a light-emitting layer, and a cathode layer. The light-emitting layer is disposed between the transparent anode layer and the cathode layer. The transparent anode layer is located on the side of the light-emitting layer close to the base layer. The transparent anode layer includes a first transparent anode and a second transparent anode arranged at intervals. The light-emitting layer includes a first light-emitting layer disposed on the first transparent anode and a second light-emitting layer disposed on the second transparent anode. The first light-emitting layer emits light of a first wavelength λ1, and the second light-emitting layer emits light of a second wavelength λ2. The first wavelength λ1 is greater than the second wavelength λ2; A thin-film encapsulation layer located on the side of the light-emitting device layer away from the base layer; And A cover layer disposed between the cathode layer and the thin-film encapsulation layer. The refractive index of the cover layer is greater than that of the cathode layer. The cover layer includes a first cover unit and a second cover unit. The orthographic projection of the first cover unit on the base layer overlaps with the orthographic projection of the first light-emitting layer on the base layer, and the orthographic projection of the second cover unit on the base layer overlaps with the orthographic projection of the second light-emitting layer on the base layer. At least part of the thickness of the first cover unit is greater than at least part of the thickness of the second cover unit.

2. The display panel according to claim 1, wherein, The transparent anode layer further includes a third transparent anode arranged at intervals from the first transparent anode and the second transparent anode. The light-emitting layer further includes a third light-emitting layer disposed on the third transparent anode. The third light-emitting layer emits light of a third wavelength λ3, and the third wavelength λ3 is greater than the second wavelength λ2; The cover layer further includes a third cover unit. The orthographic projection of the third cover unit on the base layer overlaps with the orthographic projection of the third light-emitting layer on the base layer. At least part of the thickness of the third cover unit is greater than at least part of the thickness of the second cover unit; When the first wavelength λ1 is greater than the third wavelength λ3, at least part of the thickness of the first cover unit is greater than at least part of the thickness of the third cover unit; or, when the first wavelength λ1 is less than the third wavelength λ3, at least part of the thickness of the first cover unit is less than at least part of the thickness of the third cover unit.

3. The display panel according to claim 2, wherein, The display panel further includes: A filter layer located on the side of the thin-film encapsulation layer away from the light-emitting device layer and including a first color-resist unit, a third color-resist unit, and a second color-resist unit with different colors. The orthographic projection of the first color-resist unit on the base layer overlaps with the orthographic projections of the first light-emitting layer and the first cover unit on the base layer. The orthographic projection of the second color-resist unit on the base layer overlaps with the orthographic projections of the second light-emitting layer and the second cover unit on the base layer. The orthographic projection of the third color-resist unit on the base layer overlaps with the orthographic projections of the third light-emitting layer and the third cover unit on the base layer; The first wavelength λ1 includes a first maximum transmittance wavelength λ a , and the transmittance of light with the first maximum transmittance wavelength λ a passing through the first color resist unit is the maximum transmittance of light with the first wavelength λ1 passing through the first color resist unit. The thickness d1 of the first covering unit satisfies the formula , A1 is the thickness of the first transparent anode, B1 is the sum of the thicknesses of the film layers between the first transparent anode and the cathode layer, C is the thickness of the cathode layer, and m1 is an integer greater than or equal to 1; The second wavelength λ2 includes a second maximum transmittance wavelength λ b , and the transmittance of light with the second maximum transmittance wavelength λ b passing through the second color filter unit is the maximum transmittance of light with the second wavelength λ2 passing through the second color filter unit. The thickness d2 of the second covering unit satisfies the formula , A2 is the thickness of the second transparent anode, B2 is the sum of the thicknesses of the film layers between the second transparent anode and the cathode layer, and m2 is an integer greater than or equal to 1; The third wavelength λ3 includes the third maximum transmittance wavelength λ c , and the transmittance of the light with the third maximum transmittance wavelength λ c passing through the third color resist unit is the maximum transmittance of the light with the third wavelength λ3 passing through the third color resist unit. The thickness d3 of the third covering unit satisfies the formula , A3 is the thickness of the third transparent anode, B3 is the sum of the thicknesses of the film layers between the third transparent anode and the cathode layer, and m3 is an integer greater than or equal to 1.

4. The display panel according to claim 3, wherein, The light of the first wavelength λ1 is red light, and the first color filter unit is a red color filter; The light of the second wavelength λ2 is blue light, and the second color filter unit is a blue color filter; The light of the third wavelength λ3 is green light, and the third color filter unit is a green color filter.

5. The display panel according to claim 4, wherein, At least one of the maximum transmittance of the light of the first wavelength λ1 passing through the first color filter unit and the maximum transmittance of the light of the third wavelength λ3 passing through the third color filter unit is less than the maximum transmittance of the light of the second wavelength λ2 passing through the second color filter unit.

6. The display panel according to claim 4, wherein, The first maximum transmittance wavelength λ a is greater than or equal to 620 nm and less than or equal to 640 nm, and the transmittance of light with the first maximum transmittance wavelength passing through the first color resist unit is greater than or equal to 45%; The second maximum transmittance wavelength λ b is greater than or equal to 420 nanometers and less than or equal to 450 nanometers, and the transmittance of light with the second maximum transmittance wavelength λ b passing through the second color resistance unit is greater than or equal to 45%; The third maximum transmittance wavelength λ c is greater than or equal to 495 nm and less than or equal to 530 nm, and the transmittance of light with the third maximum transmittance wavelength λ c passing through the third color resist unit is greater than or equal to 45%.

7. The display panel according to claim 6, wherein, The transmittance of light with the first maximum transmittance wavelength λ a through the first color resist unit is greater than or equal to 50% and less than or equal to 85%; The transmittance of light with the second maximum transmittance wavelength λ b through the second color resistance unit is greater than or equal to 60% and less than or equal to 95%; The transmittance of light with the third maximum transmittance wavelength λ c through the third color resist unit is greater than or equal to 50% and less than or equal to 85%.

8. The display panel according to claim 4, wherein, The thickness of the first covering unit is greater than or equal to 600 Å and less than or equal to 700 Å, the thickness of the second covering unit is greater than or equal to 450 Å and less than or equal to 530 Å, and the thickness of the third covering unit is greater than or equal to 540 and less than or equal to 600 Å.

9. The display panel according to claim 3, wherein, m1, m2, and m3 are all less than or equal to 3.

10. The display panel according to claim 3, wherein, The difference between the maximum thicknesses of any two of the first covering unit, the second covering unit, and the third covering unit is greater than or equal to 20 Å and less than or equal to 300 Å.

11. The display panel according to claim 3, wherein, The display panel further includes: A protective layer disposed between the covering layer and the thin film encapsulation layer; and A touch layer disposed between the thin film encapsulation layer and the color filter layer.

12. The display panel according to claim 2, wherein, At least two of the first covering unit, the second covering unit, and the third covering unit are adjacent and spaced apart.

13. The display panel according to claim 2, wherein, At least two of the first covering unit, the second covering unit, and the third covering unit are adjacent and in contact with each other.

14. The display panel according to claim 2, wherein, The orthographic projection of the first light-emitting layer on the base layer is located within the orthographic projection of the first covering unit on the base layer, the orthographic projection of the second light-emitting layer on the base layer is located within the orthographic projection of the second covering unit on the base layer, and the orthographic projection of the third light-emitting layer on the base layer is located within the orthographic projection of the third covering unit on the base layer.

15. The display panel according to claim 2, wherein, The first covering unit, the second covering unit, and the third covering unit are made of the same material.

16. The display panel according to claim 1, wherein, The refractive index of the covering layer is greater than or equal to 1.6 and less than or equal to 1.9, and the refractive index of the cathode layer is greater than or equal to 1.4 and less than or equal to 1.

6.

17. A display device, wherein, The display device includes a display panel, and the display panel includes: A base layer; The light-emitting device layer is disposed on the base layer and includes a transparent anode layer, a light-emitting layer, and a cathode layer. The light-emitting layer is disposed between the transparent anode layer and the cathode layer. The transparent anode layer is located on the side of the light-emitting layer close to the base layer. The transparent anode layer includes a first transparent anode and a second transparent anode which are spaced apart. The light-emitting layer includes a first light-emitting layer disposed on the first transparent anode and a second light-emitting layer disposed on the second transparent anode. The first light-emitting layer emits light of a first wavelength λ1, and the second light-emitting layer emits light of a second wavelength λ2. The first wavelength λ1 is greater than the second wavelength λ2; The thin-film encapsulation layer is located on the side of the light-emitting device layer away from the base layer; And The cover layer is disposed between the cathode layer and the thin-film encapsulation layer. The refractive index of the cover layer is greater than that of the cathode layer. The cover layer includes a first cover unit and a second cover unit. The orthographic projection of the first cover unit on the base layer overlaps with the orthographic projection of the first light-emitting layer on the base layer. The orthographic projection of the second cover unit on the base layer overlaps with the orthographic projection of the second light-emitting layer on the base layer. At least a part of the thickness of the first cover unit is greater than at least a part of the thickness of the second cover unit.

18. The display device according to claim 17, wherein, The transparent anode layer further includes a third transparent anode which is spaced apart from the first transparent anode and the second transparent anode. The light-emitting layer further includes a third light-emitting layer disposed on the third transparent anode. The third light-emitting layer emits light of a third wavelength λ3. The third wavelength λ3 is greater than the second wavelength λ2; The cover layer further includes a third cover unit. The orthographic projection of the third cover unit on the base layer overlaps with the orthographic projection of the third light-emitting layer on the base layer. At least a part of the thickness of the third cover unit is greater than at least a part of the thickness of the second cover unit; When the first wavelength λ1 is greater than the third wavelength λ3, at least a part of the thickness of the first cover unit is greater than at least a part of the thickness of the third cover unit; or, when the first wavelength λ1 is less than the third wavelength λ3, at least a part of the thickness of the first cover unit is less than at least a part of the thickness of the third cover unit.

19. The display device according to claim 18, wherein, The display panel further includes: The filter layer is located on the side of the thin-film encapsulation layer away from the light-emitting device layer and includes a first color-resist unit, a third color-resist unit, and a second color-resist unit with different colors. The orthographic projection of the first color-resist unit on the base layer overlaps with the orthographic projections of the first light-emitting layer and the first cover unit on the base layer. The orthographic projection of the second color-resist unit on the base layer overlaps with the orthographic projections of the second light-emitting layer and the second cover unit on the base layer. The orthographic projection of the third color-resist unit on the base layer overlaps with the orthographic projections of the third light-emitting layer and the third cover unit on the base layer; The first wavelength λ1 includes a first maximum transmittance wavelength λ a , and the transmittance of the light with the first maximum transmittance wavelength λ a passing through the first color resist unit is the maximum transmittance of the light with the first wavelength λ1 passing through the first color resist unit. The thickness d1 of the first covering unit satisfies the formula , A1 is the thickness of the first transparent anode, B1 is the sum of the thicknesses of the film layers between the first transparent anode and the cathode layer, C is the thickness of the cathode layer, and m1 is an integer greater than or equal to 1; The second wavelength λ2 includes a second maximum transmittance wavelength λ b , and the transmittance of the light with the second maximum transmittance wavelength λ b passing through the second color resist unit is the maximum transmittance of the light with the second wavelength λ2 passing through the second color resist unit. The thickness d2 of the second covering unit satisfies the formula , A2 is the thickness of the second transparent anode, B2 is the sum of the thicknesses of the film layers between the second transparent anode and the cathode layer, and m2 is an integer greater than or equal to 1; The third wavelength λ3 includes a third maximum transmittance wavelength λ c , and the transmittance of light with the third maximum transmittance wavelength λ c passing through the third color resist unit is the maximum transmittance of light with the third wavelength λ3 passing through the third color resist unit. The thickness d3 of the third covering unit satisfies the formula , A3 is the thickness of the third transparent anode, B3 is the sum of the thicknesses of the film layers between the third transparent anode and the cathode layer, and m3 is an integer greater than or equal to 1.

20. The display device according to claim 19, wherein, The light of the first wavelength λ1 is red light, and the first color resist unit is a red color resist; The light of the second wavelength λ2 is blue light, and the second color resist unit is a blue color resist; The light of the third wavelength λ3 is green light, and the third color resist unit is a green color resist.

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