Method for determining loss of IGBT power module, and storage medium and computer device
By obtaining the electrical parameter information of the IGBT power module and determining the loss based on the linear relationship, the problem of complex loss determination method and large calculation amount in the DPWM modulation mode in the prior art is solved, and real-time and accurate determination of the loss of the IGBT power module in the environment with low system computing power is achieved.
Patent Information
- Application Number
- PCT/CN2024/135217
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-20
- Filing Date
- 2024-11-28
- Publication Date
- 2025-06-26
AI Technical Summary
The real-time determination method of the prior art on the loss of IGBT power module in DPWM modulation mode is complex and has a large amount of calculation, so it cannot be run in real time in systems with low system computing power.
By obtaining the current phase current information of the IGBT power module, the bus voltage information, the power factor angle information and the modulation ratio information in the DPWM modulation mode, the current loss of the IGBT power module is determined based on this information, and the calculation is simplified by linear relationships to reduce the system load rate.
Real-time and accurate determination of the loss of IGBT power module in DPWM modulation mode is realized, reducing the system load rate, and is suitable for operation in embedded systems with low computing power.
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Figure CN2024135217_26062025_PF_FP_ABST
Abstract
Description
IGBT power module loss determination method, storage medium and computer equipment
[0001] This application claims priority to Chinese patent application CN 202311767086.6, filed on December 20, 2023, entitled “IGBT power module loss determination method, storage medium and computer device”. The entire contents of the above Chinese patent application are incorporated into this application by reference. Technical Field
[0002] The present application relates to the technical field of power module loss determination, and specifically provides an IGBT power module loss determination method, storage medium, and computer equipment. Background Art
[0003] Accurately determining power module losses within an inverter is a crucial prerequisite for estimating junction temperature, input power, bus current, and torque. Different PWM (Pulse Width Modulation) control strategies can be employed depending on the inverter application, controlled object, and control objectives. Common PWM control methods include SPWM (Sine Pulse Width Modulation), SVPWM (Space Vector Pulse Width Modulation), and DPWM (Discontinuous Pulse Width Modulation). Because SPWM's modulation wave only contains the fundamental wave and is symmetrical, its losses are simple and convenient to determine, and its loss model is widely used in the industry. However, due to the limitations of SPWM's modulation method, its DC side voltage utilization is low. Therefore, SVPWM or DPWM are the most widely used in the industry. These two methods can improve DC side voltage utilization by approximately 10% compared to SPWM. Since DPWM modulation reduces the number of switching times by 1 / 3 compared to SVPWM, it can reduce the switching loss by up to half, improve the inverter efficiency and reduce the IGBT junction temperature. In the high modulation ratio area, DPWM has limited increase in the harmonics of the motor current, so it has certain advantages.
[0004] In the prior art, there are two methods for determining the loss of power modules under DPWM modulation: offline and online. Since the offline method cannot determine the loss in real time, it can only be used for post-processing of data. The online method, on the other hand, can calculate the conduction loss and switching loss of each device in real time based on the magnitude of each parameter within an electrical cycle, integrating the losses within an electrical cycle and then averaging them. During this process, as long as a device is conducting or switching, its conduction loss or switching loss is calculated in real time, and then the integrated loss is accumulated. This method requires attention to each conduction and switching action of each device, and requires integral calculations. Therefore, the amount of calculation is very large, which increases the system load rate and places high demands on the system's computing power. It cannot be run in real time in systems with low computing power. Summary of the Invention
[0005] In order to solve the above technical problems, this application proposes an IGBT power module loss determination method, storage medium and computer equipment, which can more conveniently and accurately determine the power module loss in real time under DPWM modulation mode, thereby greatly reducing the system load rate.
[0006] To achieve the above objectives, the technical solution of this application is implemented as follows:
[0007] In a first aspect, the present application provides a method for determining loss of an IGBT power module, wherein the IGBT power module operates in a DPWM modulation mode; the method comprises:
[0008] Acquiring current phase current information of the IGBT power module, current bus voltage information of the IGBT power module, and current power factor angle information of the IGBT power module;
[0009] Obtaining current modulation ratio information under the DPWM modulation mode;
[0010] Based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, the current loss of the IGBT power module is determined; wherein, there is a linear relationship between the current phase current information and the current loss, between the current bus voltage information and the current loss, and between the current modulation ratio information and the current loss.
[0011] In some embodiments, the IGBT power module includes a plurality of chip units for performing circuit on / off control; each chip unit includes: an IGBT switching device and a diode connected in parallel with the switching device; and determining the current loss of the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information, and the current modulation ratio information includes:
[0012] Determining current losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information, and the current modulation ratio information;
[0013] Determining current losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information, and the current modulation ratio information;
[0014] The current loss of the IGBT power module is determined based on the current losses of all the switching devices and the current losses of all the diodes.
[0015] In some embodiments, determining the current losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information, and the current modulation ratio information includes:
[0016] Determining current conduction losses of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information;
[0017] Determining current switching losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information;
[0018] Based on the current conduction losses of all the switching devices and the current switching losses of all the switching devices, current losses of all the switching devices in the IGBT power module are determined.
[0019] In some embodiments, the current phase current information includes: the current phase current amplitude; the current power factor angle information includes: the current power factor angle; the current modulation ratio information includes: the current modulation ratio; and determining the current conduction loss of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information includes:
[0020] Inputting the current phase current amplitude, the current power factor angle, and the current modulation ratio into a pre-constructed first expression, so that the first expression outputs the current conduction loss of each switching device; wherein the first expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each switching device, the on-resistance of each switching device, and the current conduction loss of each switching device, and the initial conduction voltage of each switching device and the on-resistance of each switching device are both constants;
[0021] The sum of the current conduction losses of each of the switching devices is calculated to obtain the current conduction losses of all the switching devices in the IGBT power module.
[0022] In some embodiments, the current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; the current power factor angle information includes: the current power factor angle; and determining the current switching loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information includes:
[0023] Inputting the current phase current amplitude, the current bus voltage, and the current power factor angle into a pre-constructed second expression, so that the second expression outputs the current switching loss of each switching device; wherein the second expression is pre-constructed based on the relationship between the current phase current amplitude, the current bus voltage, the current power factor angle, the switching frequency of each switching device, the energy consumed when each switching device is turned on once, the energy consumed when each switching device is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module, and the current switching loss of each switching device, and the switching frequency, the energy consumed when each switching device is turned on once, the energy consumed when each switching device is turned off once, the bus reference voltage value, and the reference current value are all constants;
[0024] The sum of the current switching losses of each of the switching devices is calculated to obtain the current switching losses of all the switching devices in the IGBT power module.
[0025] In some embodiments, determining the current losses of all switching devices in the IGBT power module based on the current conduction losses of all switching devices and the current switching losses of all switching devices includes:
[0026] The sum of the current conduction loss of all the switching devices and the current switching loss of all the switching devices is calculated to obtain the current loss of all the switching devices in the IGBT power module.
[0027] In some embodiments, determining the current losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information, and the current modulation ratio information includes:
[0028] Determining current conduction losses of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information;
[0029] Determining current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information;
[0030] Based on the current conduction losses of all the diodes and the current switching losses of all the diodes, current losses of all the diodes in the IGBT power module are determined.
[0031] In some embodiments, the current phase current information includes: the current phase current amplitude; the current power factor angle information includes: the current power factor angle; the current modulation ratio information includes: the current modulation ratio; and determining the current conduction loss of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information includes:
[0032] Inputting the current phase current amplitude, the current power factor angle, and the current modulation ratio into a pre-constructed third expression, so that the third expression outputs the current conduction loss of each diode; wherein the third expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each diode, the conduction resistance of each diode, and the current conduction loss of each diode, and the initial conduction voltage of each diode and the conduction resistance of each diode are both constants;
[0033] The sum of the current conduction loss of each diode is calculated to obtain the current conduction loss of all diodes in the IGBT power module.
[0034] In some embodiments, the current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; the current power factor angle information includes: the current power factor angle; and determining the current switching loss of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information includes:
[0035] Inputting the current phase current amplitude, the current bus voltage, and the current power factor angle into a pre-constructed fourth expression, so that the fourth expression outputs the current switching loss of each diode; wherein the fourth expression is pre-constructed based on the relationship between the current phase current amplitude, the current bus voltage, the current power factor angle, the switching frequency of each switching device, the energy consumed when each diode is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module, and the current switching loss of each diode, and the switching frequency, the energy consumed when each diode is turned off once, the bus reference voltage value, and the reference current value are all constants;
[0036] The sum of the current switching losses of each diode is calculated to obtain the current switching losses of all diodes in the IGBT power module.
[0037] In some embodiments, determining the current losses of all diodes in the IGBT power module based on the current conduction losses of all diodes and the current switching losses of all diodes includes:
[0038] The sum of the current conduction loss of all the diodes and the current switching loss of all the diodes is calculated to obtain the current loss of all the diodes in the IGBT power module.
[0039] In some embodiments, determining the current loss of the IGBT power module based on the current losses of all the switching devices and the current losses of all the diodes includes:
[0040] The sum of the current losses of all the switching devices and the current losses of all the diodes is calculated to obtain the current loss of the IGBT power module.
[0041] In some embodiments, the method further comprises:
[0042] Determining current conduction losses of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information;
[0043] Determining current conduction losses of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information;
[0044] The current total conduction loss of the IGBT power module is determined based on the current conduction losses of all the switching devices and the current conduction losses of all the diodes.
[0045] In some embodiments, the method further comprises:
[0046] Determining current switching losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information;
[0047] Determining current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information;
[0048] A current total switching loss of the IGBT power module is determined based on the current switching losses of all the switching devices and the current switching losses of all the diodes.
[0049] In a second aspect, the present application provides a computer-readable storage medium storing a plurality of program codes, wherein the program codes are suitable for being loaded and run by a processor to execute the IGBT power module loss determination method described in any one of the technical solutions in the first aspect.
[0050] In a third aspect, the present application provides a computer device comprising a storage device and a processor, wherein the storage device stores program code that can be run on the processor, and when the program code is executed by the processor, the IGBT power module loss determination method described in any one of the technical solutions in the first aspect is implemented.
[0051] The IGBT power module loss determination method, storage medium, and computer device provided in the embodiments of the present application obtain the current phase current information, current bus voltage information, and current power factor angle information of the IGBT power module, and obtain the current modulation ratio information under the DPWM modulation mode. Based on the above current phase current information, current bus voltage information, current power factor angle information, and current modulation ratio information, the current loss of the IGBT power module is determined, so that the determination of the current loss of the IGBT power module can be based on the current electrical parameters. That is, the present application can obtain the power module loss corresponding to any moment based on the electrical parameters at that moment. Compared with the prior art method of requiring the integration and accumulation of the loss of an electrical cycle, the present application can obviously determine the current loss of the power module more conveniently and promptly. Moreover, the above current phase current information and the current loss, the current bus voltage information and the current loss, and the current modulation ratio information and the current loss are all linear relationships, so that the present application has a smaller amount of calculation when determining the loss and lower requirements on system computing power. Furthermore, the present application simultaneously determines power module losses based on current phase current information, current bus voltage information, current power factor angle information, and current modulation ratio information, comprehensively considering various electrical parameters that affect power module losses, thereby achieving accurate determination results. Thus, the technical solutions provided by the embodiments of the present application enable more convenient, real-time, and accurate determination of power module losses in DPWM modulation mode, thereby significantly reducing system load. BRIEF DESCRIPTION OF THE DRAWINGS
[0052] The disclosure of this application will become more easily understood with reference to the accompanying drawings. Those skilled in the art will readily appreciate that these drawings are merely for the purpose of illustrating this application and are not intended to limit the scope of protection of this application. Furthermore, similar numbers in the drawings represent similar components, where:
[0053] FIG1 is a flow chart showing the main steps of a method for determining IGBT power module loss according to an embodiment of the present application;
[0054] FIG2 is a circuit topology diagram of an IGBT power module in an embodiment of the present application;
[0055] FIG3 is a diagram showing the relationship between the DPWM modulation function and the current output by the IGBT power module under electric operation in an embodiment of the present application;
[0056] FIG4 is a diagram showing the relationship between the DPWM modulation function and the current output by the IGBT power module under power generation conditions in an embodiment of the present application;
[0057] FIG5 is a schematic diagram of a loss model based on DPWM modulation in an embodiment of the present application. DETAILED DESCRIPTION
[0058] Some embodiments of the present application are described below with reference to the accompanying drawings. Those skilled in the art should understand that these embodiments are only used to explain the technical principles of the present application and are not intended to limit the scope of protection of the present application.
[0059] In the description of this application, "module" and "processor" may include hardware, software, or a combination of both. A module may include hardware circuitry, various suitable sensors, communication ports, and memory. It may also include software components, such as program code, or a combination of software and hardware. A processor may be a central processing unit, a microprocessor, an image processor, a digital signal processor, or any other suitable processor. A processor has data and / or signal processing capabilities. A processor may be implemented in software, hardware, or a combination of both. Non-transitory computer-readable storage media include any suitable medium capable of storing program code, such as magnetic disks, hard disks, optical disks, flash memory, read-only memory, random access memory, etc. The term "A and / or B" refers to all possible combinations of A and B, such as only A, only B, or both A and B. The terms "at least one of A or B" or "at least one of A and B" have similar meanings to "A and / or B" and may include only A, only B, or both A and B. The singular forms "one" and "the" may also include the plural forms.
[0060] During DPWM modulation, since its modulation wave is a discontinuous function, although the DPWM modulation wave can be decomposed into a series of sine waves of different frequencies and amplitudes through Fourier decomposition, it contains complex harmonic components. Existing technologies do not yet have a loss determination model suitable for running in real-time embedded systems. If the loss is calculated in real time within the PWM cycle and averaged over one electrical cycle, the system load rate will be greatly increased.
[0061] To this end, the present application provides a real-time calculation of the IGBT module loss model under DPWM modulation. The model is an average model based on the electrical cycle, which can calculate the real-time loss of the power module based on the analytical formula, and can be executed in systems with slower chip computing power, greatly reducing the system load rate, and is suitable for operation in embedded devices.
[0062] Based on the above ideas, the present application provides a method for determining the loss of an IGBT power module, wherein the IGBT power module operates in a DPWM modulation mode. As shown in FIG1 , the method for determining the loss of an IGBT power module in an embodiment of the present application includes the following steps S101 to S103:
[0063] Step S101, obtaining current phase current information of the IGBT power module, current bus voltage information of the IGBT power module, and current power factor angle information of the IGBT power module;
[0064] The power devices used in inverters or rectifiers can be IGBTs, SiCs, GaNs, and other types. These power modules all generate conduction losses and switching losses during operation. Different types of power devices have different distributions of conduction and switching losses across the switching device and its parallel diode. As shown in Figure 2, this primarily reflects the difference between silicon-based IGBTs and SiC-based MOSFETs. This embodiment uses a silicon-based IGBT power module as an example.
[0065] In this embodiment, the current phase current information may include a numerical value or expression that can reflect the current phase current size of the IGBT power module; the current bus voltage information may include a numerical value or expression that can reflect the current bus voltage size of the IGBT power module; the current power factor angle information may include a numerical value or expression that can reflect the current power factor angle size of the IGBT power module.
[0066] Step S102, obtaining current modulation ratio information in the DPWM modulation mode;
[0067] Conventional DPWM control modes include DPWM0, DPWM1, DPWM2, DPWMMAX, and DPWMMIN. This embodiment is described by taking the most commonly used DPWM1 modulation suitable for unity power factor working conditions as an example.
[0068] In this embodiment, the current modulation ratio information may include a numerical value or an expression that can reflect the current modulation ratio in the DPWM modulation mode.
[0069] Step S103, determining the current loss of the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; wherein, there is a linear relationship between the current phase current information and the current loss, between the current bus voltage information and the current loss, and between the current modulation ratio information and the current loss.
[0070] As shown in Figure 2, the IGBT power module described in this embodiment includes multiple chip units for controlling circuit on / off. Figure 2 shows six of these chip units. The leads from the midpoint between the upper and lower bridge arms represent the three-phase currents A, B, and C output by the IGBT power module, and these three-phase current leads are connected to the motor. Each chip unit includes an IGBT switching device and a diode connected in parallel with the switching device.
[0071] In order to more accurately determine the current loss of the IGBT power module, the present embodiment determines the current loss of the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, including: determining the current loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; determining the current loss of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; determining the current loss of the IGBT power module based on the current loss of all switching devices and the current loss of all diodes.
[0072] In this embodiment, the current loss of the IGBT power module is divided into the current loss of all switching devices in the IGBT power module and the current loss of all diodes in the IGBT power module. The above two types of losses are calculated separately, and then the total loss of the IGBT power module is determined based on these two types of losses, so that the above total loss value can be obtained more clearly and accurately.
[0073] In order to more accurately determine the current losses of all switching devices in the IGBT power module, and thus more accurately determine the current losses of the IGBT power module, the present embodiment describes determining the current losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, including: determining the current conduction losses of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; determining the current switching losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; and determining the current losses of all switching devices in the IGBT power module based on the current conduction losses of all switching devices and the current switching losses of all switching devices.
[0074] As shown in Figure 2, taking a single IGBT phase as an example, when a positive current is applied, the upper-side switching device, the IGBT, switches. When the upper-side IGBT is on, current flows through it, generating conduction losses due to the IGBT's forward voltage drop. When the upper-side IGBT is off, current flows through the lower-side diode, generating conduction losses due to the diode's forward voltage drop. The same applies when a negative current is applied. During the switching process of the IGBT or diode, there is an overlap between the current and voltage of the switching device, resulting in losses. This loss is referred to as switching loss.
[0075] Therefore, this embodiment can divide the current loss of the switching device into two categories: the conduction loss of the switching device and the switching loss of the switching device. After calculating the conduction loss of all switching devices and the switching loss of all switching devices respectively, the current loss of all switching devices can be determined based on these two types of losses.
[0076] In this embodiment, the current phase current information includes the current phase current amplitude; the current power factor angle information includes the current power factor angle; and the current modulation ratio information includes the current modulation ratio. That is, in this embodiment, the current specific values of each electrical parameter can be used to reflect the electrical parameter information. Under this premise, in order to more accurately determine the current conduction loss of all switching devices in the IGBT power module, the embodiment described in determining the current conduction loss of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information includes: inputting the current phase current amplitude, the current power factor angle and the current modulation ratio into a pre-constructed first expression, so that the first expression outputs the current conduction loss of each switching device; wherein, the first expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each switching device, the on-resistance of each switching device and the current conduction loss of each switching device, and the initial conduction voltage of each switching device and the on-resistance of each switching device are both constants; calculating the sum of the current conduction loss of each switching device to obtain the current conduction loss of all switching devices in the IGBT power module.
[0077] Specifically, the above first expression is divided into a first expression under motoring condition and a first expression under power generation condition, that is, it is divided into a single IGBT conduction loss expression under motoring condition and a single IGBT conduction loss expression under power generation condition.
[0078] In a specific embodiment, the first expression under the electric operating condition is:
[0079] Wherein, PIGBTConLoss(DPWM1)_Mot is the single IGBT conduction loss under electric working condition, that is, the current conduction loss of a switch device in the IGBT power module under electric working condition; I m is the current phase current amplitude; U ceo is the initial on-state voltage of each switching device, which is a constant; M is the current modulation ratio; is the current power factor angle; r igbt The on-resistance of each switching device is a constant.
[0080] After the current conduction loss of each switching device under the electric operating condition is calculated using the above formula, the current conduction loss of all switching devices in the IGBT power module under the electric operating condition can be calculated by summing them.
[0081] In a specific embodiment, the first expression under power generation conditions is:
[0082] Wherein, PIGBTConLoss(DPWM1)_Gen is the single IGBT conduction loss under power generation conditions, that is, the current conduction loss of a switch device in the IGBT power module under power generation conditions; I m is the current phase current amplitude; U ceo is the initial on-state voltage of each switching device, which is a constant; M is the current modulation ratio; is the current power factor angle; r igbt The on-resistance of each switching device is a constant.
[0083] After the current conduction loss of each switching device under the power generation condition is calculated using the above formula, the current conduction loss of all switching devices in the IGBT power module under the power generation condition can be calculated by summing them.
[0084] In this embodiment, the current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; the current power factor angle information includes: the current power factor angle. That is, in this embodiment, the current specific numerical value of each electrical parameter can be used to reflect the information of each electrical parameter. Under this premise, in order to more accurately determine the current switching loss of all switching devices in the IGBT power module, the current switching loss of all switching devices in the IGBT power module is determined based on the current phase current information, the current bus voltage information and the current power factor angle information, including: inputting the current phase current amplitude, the current bus voltage and the current power factor angle into a pre-constructed second expression, so that the second expression outputs the current switching loss of each switching device; wherein, the second expression is based on the current phase current amplitude, the current bus voltage, the current power factor The relationship between the angle size, the switching frequency of each of the switching devices, the energy consumed when each of the switching devices is turned on once, the energy consumed when each of the switching devices is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module and the current switching loss of each of the switching devices is pre-constructed, and the switching frequency, the energy consumed when each of the switching devices is turned on once, the energy consumed when each of the switching devices is turned off once, the bus reference voltage value and the reference current value are all constants; the sum of the current switching losses of each of the switching devices is calculated to obtain the current switching losses of all the switching devices in the IGBT power module.
[0085] Specifically, in practical applications, since the motoring condition and the generating condition are symmetrical in terms of switching losses, the switching losses under these two conditions are the same. Therefore, there is no need to distinguish between the motoring condition and the generating condition with respect to switching losses.
[0086] In a specific embodiment, the second expression is:
[0087] Among them, P IGBTSwLoss(DPWM1) is the single IGBT switching loss, i.e. the current switching loss of a switching device in the IGBT power module; I m is the current phase current amplitude; U dc is the current bus voltage; is the current power factor angle; f sw is the switching frequency of each switching device, which is a constant; E IGBTon The energy consumed when each switch is turned on is a constant; E IGBToff The energy consumed when each switching device is turned off once is a constant; U nis the bus reference voltage value, which is a constant; I n is the reference current value, which is a constant.
[0088] After the current switching loss of each switching device is calculated using the above formula, the current switching loss of all switching devices in the IGBT power module can be calculated by summing them.
[0089] In order to more accurately determine the current losses of all switching devices in the IGBT power module, this embodiment describes determining the current losses of all switching devices in the IGBT power module based on the current conduction losses of all switching devices and the current switching losses of all switching devices, including: calculating the sum of the current conduction losses of all switching devices and the current switching losses of all switching devices to obtain the current losses of all switching devices in the IGBT power module.
[0090] In practical applications, it is necessary to distinguish whether the IGBT power module is currently in an electric working condition or a power generation working condition. According to different working conditions, different first expressions are used to calculate the current conduction loss of the switching device. Then, the current loss of all switching devices in the IGBT power module can be obtained by calculating the sum of the current conduction loss of all switching devices in the IGBT power module and the current switching loss of all switching devices in the IGBT power module.
[0091] In order to more accurately determine the current losses of all diodes in the IGBT power module, and thus more accurately determine the current losses of the IGBT power module, the present embodiment describes determining the current losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, including: determining the current conduction losses of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; determining the current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; and determining the current losses of all diodes in the IGBT power module based on the current conduction losses of all diodes and the current switching losses of all diodes.
[0092] As described above, based on the working process of the circuit topology diagram shown in Figure 2, this embodiment can divide the current loss of the diode into two categories: the conduction loss of the diode and the switching loss of the diode. After calculating the conduction loss of all diodes and the switching loss of all diodes respectively, the current loss of all diodes can be determined based on these two types of losses.
[0093] As described above, in this embodiment, the current phase current information includes: the current phase current amplitude; the current power factor angle information includes: the current power factor angle; and the current modulation ratio information includes: the current modulation ratio. Under this premise, the method of determining the current conduction loss of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information, and the current modulation ratio information in this embodiment includes: inputting the current phase current amplitude, the current power factor angle, and the current modulation ratio into a pre-constructed third expression, so that the third expression outputs the current conduction loss of each diode; wherein the third expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each diode, the on-resistance of each diode, and the current conduction loss of each diode, and the initial conduction voltage and the on-resistance of each diode are constants; and calculating the sum of the current conduction losses of each diode to obtain the current conduction losses of all diodes in the IGBT power module.
[0094] Specifically, the third expression is divided into a third expression under the electric working condition and a third expression under the power generation working condition, that is, it is divided into a single diode conduction loss expression under the electric working condition and a single diode conduction loss expression under the power generation working condition.
[0095] In a specific embodiment, the third expression under the electric operating condition is:
[0096] Wherein, PDiodeConLoss(DPWM1)_Mot is the single diode conduction loss under electric working condition, that is, the current conduction loss of a diode in the IGBT power module under electric working condition; I m is the current phase current amplitude; U fo is the initial conduction voltage of each diode, which is a constant; M is the current modulation ratio; is the current power factor angle; r diode is the on-resistance of each diode, which is a constant.
[0097] After the current conduction loss of each diode under the electric operating condition is calculated using the above formula, the current conduction loss of all diodes in the IGBT power module under the electric operating condition can be calculated by summing them.
[0098] In a specific embodiment, the third expression under power generation conditions is:
[0099] Wherein, PDiodeConLoss(DPWM1)_Gen is the single diode conduction loss under the power generation condition, that is, the current conduction loss of a diode in the IGBT power module under the power generation condition; I m is the current phase current amplitude; U fo is the initial conduction voltage of each diode, which is a constant; M is the current modulation ratio; is the current power factor angle; r diode is the on-resistance of each diode, which is a constant.
[0100] After the current conduction loss of each diode under the power generation condition is calculated using the above formula, the current conduction loss of all diodes in the IGBT power module under the power generation condition can be calculated by summing them.
[0101] As described above, the current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; and the current power factor angle information includes: the current power factor angle. Under this premise, the present embodiment determines the current switching loss of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, and the current power factor angle information, including: inputting the current phase current amplitude, the current bus voltage, and the current power factor angle into a pre-constructed fourth expression, so that the fourth expression outputs the current switching loss of each diode; wherein the fourth expression is pre-constructed based on the relationship between the current phase current amplitude, the current bus voltage, the current power factor angle, the switching frequency of each switching device, the energy consumed when each diode is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module, and the current switching loss of each diode, and the switching frequency, the energy consumed when each diode is turned off once, the bus reference voltage value, and the reference current value are all constants; and calculating the sum of the current switching loss of each diode to obtain the current switching loss of all diodes in the IGBT power module.
[0102] As mentioned above, in actual applications, since the motoring condition and the generating condition are symmetrical in terms of switching losses, the switching losses under these two conditions are the same. Therefore, there is no need to distinguish between the motoring condition and the generating condition with respect to switching losses.
[0103] In a specific embodiment, the fourth expression is:
[0104] Among them, P DiodeSwLoss(DPWM1)is the single diode switching loss, i.e. the current switching loss of a diode in the IGBT power module; I m is the current phase current amplitude; U dc is the current bus voltage; is the current power factor angle; f sw is the switching frequency of each diode, which is a constant; E Diodeoff The energy consumed when each diode is turned off is a constant; U n is the bus reference voltage value, which is a constant; I n is the reference current value, which is a constant.
[0105] After calculating the current switching loss of each diode using the above formula, the current switching loss of all diodes in the IGBT power module can be calculated by summing them.
[0106] In order to more accurately determine the current losses of all diodes in the IGBT power module, this embodiment describes determining the current losses of all diodes in the IGBT power module based on the current conduction losses of all diodes and the current switching losses of all diodes, including: calculating the sum of the current conduction losses of all diodes and the current switching losses of all diodes to obtain the current losses of all diodes in the IGBT power module.
[0107] In practical applications, it is necessary to distinguish whether the IGBT power module is currently in an electric working condition or a power generation working condition. According to different working conditions, different third expressions are used to calculate the current conduction loss of the diode. Then, the current loss of all diodes in the IGBT power module can be obtained by calculating the sum of the current conduction loss of all diodes in the IGBT power module and the current switching loss of all diodes in the IGBT power module.
[0108] In order to more accurately determine the current loss of the IGBT power module, the current loss of the IGBT power module is determined based on the current loss of all the switching devices and the current loss of all the diodes described in this embodiment, including: calculating the sum of the current loss of all the switching devices and the current loss of all the diodes to obtain the current loss of the IGBT power module.
[0109] Furthermore, in order to more comprehensively determine the losses of the IGBT power module, the method described in this embodiment also includes: determining the current conduction losses of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; determining the current conduction losses of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; and determining the current total conduction losses of the IGBT power module based on the current conduction losses of all switching devices and the current conduction losses of all diodes.
[0110] Among them, the specific method for determining the current conduction loss of all switching devices in the IGBT power module, as well as the specific method for determining the current conduction loss of all diodes in the IGBT power module, can be found in the technical solutions described above and will not be repeated here.
[0111] In this embodiment, after determining the current conduction losses of all switching devices in the IGBT power module and the current conduction losses of all diodes in the IGBT power module, the sum of the current conduction losses of all the above switching devices and the current conduction losses of all diodes can be calculated to obtain the current total conduction loss of the IGBT power module.
[0112] Furthermore, in order to more comprehensively determine the losses of the IGBT power module, the method described in this embodiment also includes: determining the current switching losses of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; determining the current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; and determining the current total switching losses of the IGBT power module based on the current switching losses of all switching devices and the current switching losses of all diodes.
[0113] Among them, the specific method for determining the current switching losses of all switching devices in the IGBT power module, as well as the specific method for determining the current switching losses of all diodes in the IGBT power module, can be found in the technical solutions described above and will not be repeated here.
[0114] In this embodiment, after determining the current switching losses of all switching devices in the IGBT power module and the current switching losses of all diodes in the IGBT power module, the sum of the current switching losses of all the above switching devices and the current switching losses of all diodes can be calculated to obtain the current total switching loss of the IGBT power module.
[0115] The following describes the derivation process and derivation principle of the first, second, third and fourth expressions above:
[0116] The DPWM1 modulation function is discontinuous, with two 60° periods of inactive switching within one electrical cycle. Using Fourier decomposition to determine its modulation function expression is very cumbersome. This embodiment first uses piecewise function integration to obtain its analytical expression, which is then used to calculate the losses of the IGBT power module. The DPWM1 modulation function expression within one cycle (0 to 2π) is as follows:
[0117] Where θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis; M is the modulation ratio under DPWM1 modulation; is the power factor angle of the IGBT power module.
[0118] In this embodiment, the final IGBT and diode losses under DPWM1 modulation can be solved by a piecewise integration and simplification method.
[0119] 1. Calculation of conduction loss under DPWM1 modulation
[0120] (1) Electric working condition
[0121] The power factor angle range under electric working conditions is:
[0122] The relationship between the DPWM1 modulation function and the output current of the IGBT power module under electric working conditions is shown in Figure 3. From Figure 3, we can see the phase relationship between the current and voltage duty cycle. The curve DutyA DPWM1 can be divided into six segments, corresponding to the above Duty DPWM1 The six-segment expression in (θ). The electrical parameters in Figure 3 are: modulation ratio M = 0.8, phase current amplitude I m =100,\varphi=\frac{\pi}{12}.
[0123] The average conduction loss of a single switching device IGBT in one electrical cycle can be calculated by integrating the IGBT conduction loss in half a current cycle into four sections and then averaging them. The specific formula is as follows:
[0124] Wherein, PIGBTConLoss(DPWM1)_Mot is the conduction loss of a single IGBT under electric operation, that is, the conduction loss of a switching device in the IGBT power module under electric operation; is the power factor angle of the power module; U ceo is the initial turn-on voltage of the switching device; r igbtis the on-resistance of the switching device; I m is the phase current amplitude of the IGBT power module; θ is the motor's electrical angle, that is, the angle between the motor's rotor axis N and the stator axis A; and M is the modulation ratio in DPWM1 modulation mode. The number of integrals in the above formula is determined by the voltage duty cycle. In DPWM1 modulation mode, the voltage duty cycle has four discontinuous regions, so the loss calculation is also divided into four sections.
[0125] The average conduction loss of a single diode in one electrical cycle can be calculated by integrating the conduction loss of the diode in half a current cycle into four sections and then averaging them. The specific formula is as follows:
[0126] Wherein, PDiodeConLoss(DPWM1)_Mot is the conduction loss of a single diode under electric working condition, that is, the conduction loss of a diode in the IGBT power module under electric working condition; m is the phase current amplitude of the power module; U fo is the initial conduction voltage of the diode; M is the modulation ratio in DPWM1 modulation mode; is the power factor angle of the power module; r diode is the on-resistance of the diode; θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis.
[0127] (2) Power generation conditions
[0128] The power factor angle range under power generation conditions is:
[0129] The relationship between the DPWM1 modulation function and the output current of the IGBT power module under power generation conditions is shown in Figure 4. From Figure 4, we can see the phase relationship between the current and voltage duty cycle. The curve DutyA DPWM1 can be divided into six segments, corresponding to the above Duty DPWM1 The six-segment expression in (θ). The electrical parameters in Figure 4 are: modulation ratio M = 0.8, phase current amplitude I m =100,\varphi=\frac{\pi}{12}.
[0130] Just like the electric operation mode, the average conduction loss of a single IGBT in one electrical cycle in the power generation mode can also be calculated by integrating the IGBT conduction loss in half a current cycle into four sections and then averaging them. The difference is that a different modulation function is used. The specific formula is as follows:
[0131] Wherein, PIGBTConLoss(DPWM1)_Gen is the conduction loss of a single IGBT under power generation conditions, that is, the conduction loss of a switching device in the IGBT power module under power generation conditions; m is the phase current amplitude of the power module; U ceo is the initial on-state voltage of the switch device; M is the modulation ratio in the DPWM1 modulation mode; is the power factor angle of the power module; r igbt is the on-resistance of the switching device; θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis.
[0132] Just like the electric motor operation, the average conduction loss of a single diode in one electrical cycle can be calculated under the power generation operation by integrating the conduction loss of the diode in half a current cycle into four sections and then averaging them. The difference is that a different modulation function is used. The specific formula is as follows:
[0133] Wherein, PDiodeConLoss(DPWM1)_Gen is the conduction loss of a single diode under the power generation condition, that is, the conduction loss of a diode in the IGBT power module under the power generation condition; m is the phase current amplitude of the power module; U fo is the initial conduction voltage of the diode; M is the modulation ratio in DPWM1 modulation mode; is the power factor angle of the power module; r diode is the on-resistance of the diode; θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis.
[0134] 2. Switching loss calculation under DPWM1 modulation
[0135] Since the switching losses in the motoring and generating modes are symmetrical, and the switching losses are the same in both modes, this embodiment only needs to list the formula for the motoring mode. The switching loss of a single IGBT switching device can be calculated by summing the switching losses of the single IGBT switching device within half a current cycle in two integrals. The specific formula is as follows:
[0136] Among them, P IGBTSwLoss(DPWM1) is the switching loss of a single IGBT, i.e. the switching loss of a switching device in an IGBT power module; I m is the phase current amplitude of the power module; U dc is the bus voltage of the power module; is the power factor angle of the power module; f sw is the switching frequency of the switching device; E IGBTonThe energy consumed by the switch when it is turned on once; E IGBToff The energy consumed when the switch is turned off once; U n is the bus reference voltage value; I n is the reference current value output by the power module; θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis.
[0137] The calculation of the switching loss of a single diode can be obtained by integrating the diode turn-off loss in half a current cycle into two parts and summing them up. The specific formula is as follows:
[0138] Among them, P DiodeSwLoss(DPWM1) is the switching loss of a single diode, i.e. the switching loss of a diode in the IGBT power module; I m is the phase current amplitude of the power module; U dc is the bus voltage of the power module; is the power factor angle of the power module; f sw is the switching frequency of the diode; E Diodeoff The energy consumed when the diode is turned off once; U n is the bus reference voltage value; I n is the reference current value output by the power module; θ is the electrical angle of the motor, that is, the angle between the motor rotor N axis and the stator A axis.
[0139] 3. Analytical expression of IGBT loss under DPWM1 modulation
[0140] By performing a series of symbolic operations and simplifications on the above formulas, we can derive the final analytical expressions for conduction and switching losses, namely the first, second, third, and fourth expressions mentioned above. The first, second, third, and fourth expressions are analytical expressions for the integral results of the above integral formulas. In practical applications, no integral accumulation calculations are required, resulting in simple calculations, low system computing power consumption, and the ability to run in real time in embedded systems.
[0141] (1) Conduction loss
[0142] Analytical expression for single IGBT conduction loss under electric operation:
[0143] Wherein, PIGBTConLoss(DPWM1)_Mot is the single IGBT conduction loss under electric working condition, that is, the current conduction loss of a switch device in the IGBT power module under electric working condition; I m is the current phase current amplitude; U ceois the initial on-state voltage of each switching device, which is a constant; M is the current modulation ratio; is the current power factor angle; r igbt The on-resistance of each switching device is a constant.
[0144] The analytical expression of single diode conduction loss under electric working condition:
[0145] Wherein, PDiodeConLoss(DPWM1)_Mot is the single diode conduction loss under electric working condition, that is, the current conduction loss of a diode in the IGBT power module under electric working condition; I m is the current phase current amplitude; U fo is the initial conduction voltage of each diode, which is a constant; M is the current modulation ratio; is the current power factor angle; r diode is the on-resistance of each diode, which is a constant.
[0146] The analytical expression of single IGBT conduction loss under power generation conditions:
[0147] Wherein, PIGBTConLoss(DPWM1)_Gen is the single IGBT conduction loss under power generation conditions, that is, the current conduction loss of a switch device in the IGBT power module under power generation conditions; I m is the current phase current amplitude; U ceo is the initial on-state voltage of each switching device, which is a constant; M is the current modulation ratio; is the current power factor angle; r igbt The on-resistance of each switching device is a constant.
[0148] The analytical expression of single diode conduction loss under power generation conditions is:
[0149] Wherein, PDiodeConLoss(DPWM1)_Gen is the single diode conduction loss under the power generation condition, that is, the current conduction loss of a diode in the IGBT power module under the power generation condition; I m is the current phase current amplitude; U fo is the initial conduction voltage of each diode, which is a constant; M is the current modulation ratio; is the current power factor angle; r diode is the on-resistance of each diode, which is a constant.
[0150] Through the above analytical expression, the total conduction loss of the IGBT power module can be calculated as:
[0151] (2) Switching loss
[0152] The analytical expression for switching loss is as follows:
[0153] Analytical expression for single IGBT switching loss:
[0154] Among them, P IGBTSwLoss(DPWM1) is the single IGBT switching loss, i.e. the current switching loss of a switching device in the IGBT power module; I m is the current phase current amplitude; U dc is the current bus voltage; is the current power factor angle; f sw is the switching frequency of each switching device, which is a constant; E IGBTon The energy consumed when each switch is turned on is a constant; E IGBToff The energy consumed when each switching device is turned off once is a constant; U n is the bus reference voltage value, which is a constant; I n is the reference current value, which is a constant.
[0155] Analytical expression for single diode switching loss:
[0156] Among them, P DiodeSwLoss(DPWM1) is the single diode switching loss, i.e. the current switching loss of a diode in the IGBT power module; I m is the current phase current amplitude; U dc is the current bus voltage; is the current power factor angle; f sw is the switching frequency of each diode, which is a constant; E Diodeoff The energy consumed when each diode is turned off is a constant; U n is the bus reference voltage value, which is a constant; I n is the reference current value, which is a constant.
[0157] Through the above analytical expression, the total switching loss of the IGBT power module can be calculated as: TotalSwLoss(DPWM1) =6[P IGBTSwloss(DPWM1) +P DiodeSwloss(DPWM1) ]
[0158] Through the above analytical expression, the loss of a single switching device IGBT can be calculated as:
[0159] Through the above analytical expression, the loss of a single diode can be calculated as:
[0160] Through the above analytical expression, the total loss of the IGBT power module under DPWM1 modulation can be calculated as: TotalLoss(DPWM1) =6[P IGBTLoss(DPWM1 )+P DiodeLoss(DPWM1) ]
[0161] The IGBT loss model under DPWM1 modulation is shown in Figure 5. By obtaining the current electrical parameter I m 、U dc 、 and M, inputting them into the loss model, we can get P TotalLoss(DPWM1) 、P IGBTLoss(DPWM1) and P DiodeLoss(DPWM1) The output result is:
[0162] This embodiment proposes an IGBT loss model under DPWM control based on analytical expressions, including an IGBT / Diode conduction loss model and an IGBT / Diode switching loss model. This model comprehensively determines the losses of the IGBT power module. Furthermore, the analytical expression for IGBT / Diode losses under DPWM1 modulation derived in this embodiment can be reused for loss calculations, minimizing overall computing power consumption.
[0163] Based on steps S101-S103 above, this application solves the technical problem that the existing technology for determining the loss of IGBT power modules under DPWM modulation is complex and computationally intensive, resulting in the inability to run in real time in systems with low computing power. Furthermore, this application proposes an IGBT module loss model based on analytical expressions under DPWM modulation, which allows the model to run in real time in embedded systems and solves the problem that the existing technology lacks a loss model based on analytical equations under DPWM modulation modes.
[0164] It should be pointed out that although the various steps in the above embodiments are described in a specific order, those skilled in the art will understand that in order to achieve the effect of the present application, different steps do not have to be performed in such an order. They can be performed simultaneously (in parallel) or in other orders. These changes are within the scope of protection of the present application.
[0165] The technical solution provided in the embodiment of the present application obtains the current phase current information, current bus voltage information and current power factor angle information of the IGBT power module, and obtains the current modulation ratio information under the DPWM modulation mode. Based on the above current phase current information, current bus voltage information, current power factor angle information and current modulation ratio information, the current loss of the IGBT power module is determined, so that the determination of the current loss of the IGBT power module can be based on the current electrical parameters. That is, the present application can obtain the power module loss corresponding to the moment based on the electrical parameters at any moment. Compared with the existing technology that requires the integration and accumulation of the loss of an electrical cycle, the present application can obviously determine the current loss of the power module more conveniently and promptly. Moreover, the above current phase current information and the current loss, the current bus voltage information and the current loss, and the current modulation ratio information and the current loss are all linear relationships, so that the present application has a smaller amount of calculation when determining the loss and lower requirements on system computing power. Furthermore, the present application simultaneously determines power module losses based on current phase current information, current bus voltage information, current power factor angle information, and current modulation ratio information, comprehensively considering various electrical parameters that affect power module losses, thereby achieving accurate determination results. Thus, the technical solutions provided by the embodiments of the present application enable more convenient, real-time, and accurate determination of power module losses in DPWM modulation mode, thereby significantly reducing system load.
[0166] Furthermore, the present application also provides an IGBT power module loss determination device, wherein the IGBT power module operates in a DPWM modulation mode. The IGBT power module loss determination device in the embodiment of the present application mainly includes a first acquisition unit, a second acquisition unit and a loss determination unit.
[0167] A first acquiring unit is configured to acquire current phase current information of the IGBT power module, current bus voltage information of the IGBT power module, and current power factor angle information of the IGBT power module;
[0168] A second acquiring unit, configured to acquire current modulation ratio information in the DPWM modulation mode;
[0169] A loss determination unit is used to determine the current loss of the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; wherein, there is a linear relationship between the current phase current information and the current loss, between the current bus voltage information and the current loss, and between the current modulation ratio information and the current loss.
[0170] In some embodiments, one or more of the first acquisition unit, the second acquisition unit, and the loss determination unit may be combined into one module. In one embodiment, the specific implementation functions thereof may be described in detail in steps S101 to S103.
[0171] The above-mentioned IGBT power module loss determination device is used to execute the embodiment of the IGBT power module loss determination method shown in Figure 1. The technical principles, technical problems solved and technical effects produced by the two are similar. Technicians in this technical field can clearly understand that for the convenience and conciseness of description, the specific working process and related instructions of the IGBT power module loss determination device can refer to the contents described in the embodiment of the IGBT power module loss determination method, and will not be repeated here.
[0172] Furthermore, the present application also provides a computer-readable storage medium. In a computer-readable storage medium embodiment according to the present application, the computer-readable storage medium can be configured to store a program for executing the IGBT power module loss determination method of the above-mentioned method embodiment, and the program can be loaded and run by the processor to implement the above-mentioned IGBT power module loss determination method. For ease of explanation, only the parts related to the embodiment of the present application are shown. For specific technical details not disclosed, please refer to the method part of the embodiment of the present application. The computer-readable storage medium can be a storage device formed by various electronic devices. Optionally, the computer-readable storage medium in the embodiment of the present application is a non-temporary computer-readable storage medium.
[0173] Furthermore, the present application also provides a computer device, which includes a storage device and a processor, wherein the storage device stores program code that can be run on the processor, and when the program code is executed by the processor, the IGBT power module loss determination method as described in any of the above-mentioned IGBT power module loss determination method technical solutions is implemented.
[0174] In this embodiment, the storage device in the computer device may be configured to store a program for executing the method for determining IGBT power module loss according to the above-described method embodiment, and the processor may be configured to execute the program in the storage device, including but not limited to a program for executing the method for determining IGBT power module loss according to the above-described method embodiment. For ease of illustration, only portions relevant to the embodiment of the present invention are shown. For specific technical details not disclosed, please refer to the method section of the embodiment of the present invention.
[0175] In the embodiment of the present application, the computer device may be a control device formed by various electronic devices. In some possible implementations, the device may include multiple storage devices and multiple processors. The program for executing the IGBT power module loss determination method of the above method embodiment can be divided into multiple sub-programs, and each sub-program can be loaded and run by the processor to execute different steps of the IGBT power module loss determination method of the above method embodiment. Specifically, each sub-program can be stored in different memories respectively, and each processor can be configured to execute the program in one or more memories to jointly implement the IGBT power module loss determination method of the above method embodiment, that is, each processor executes different steps of the IGBT power module loss determination method of the above method embodiment respectively to jointly implement the IGBT power module loss determination method of the above method embodiment.
[0176] The aforementioned multiple processors may be processors deployed on the same device. For example, the aforementioned computer device may be a high-performance device composed of multiple processors, and the aforementioned multiple processors may be processors configured on the high-performance device. Furthermore, the aforementioned multiple processors may also be processors deployed on different devices. For example, the aforementioned computer device may be a server cluster, and the aforementioned multiple processors may be processors on different servers in the server cluster.
[0177] It will be understood by those skilled in the art that all or part of the processes in the method for implementing the above embodiment of the present application can also be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a computer-readable storage medium. When the computer program is executed by a processor, it can implement the steps of each of the above method embodiments. The computer program includes computer program code, which can be in source code form, object code form, executable file or some intermediate form. The computer-readable storage medium can include: any entity or device, medium, USB flash drive, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory, random access memory, electric carrier signal, telecommunication signal and software distribution medium that can carry the computer program code. It should be noted that the content contained in the computer-readable storage medium can be appropriately increased or decreased according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable storage media do not include electric carrier signals and telecommunication signals.
[0178] Thus far, the technical solutions of the present application have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is readily understood by those skilled in the art that the scope of protection of the present application is obviously not limited to these specific embodiments. Without departing from the principles of the present application, those skilled in the art may make equivalent changes or substitutions to the relevant technical features, and the technical solutions after such changes or substitutions will fall within the scope of protection of the present application.
Claims
1. A method for determining IGBT power module loss, characterized in that: The IGBT power module operates in a DPWM modulation mode; the method comprises: Acquire current phase current information of the IGBT power module, current bus voltage information of the IGBT power module, and current power factor angle information of the IGBT power module; Acquire current modulation ratio information under the DPWM modulation mode; Based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, the current loss of the IGBT power module is determined; wherein, there is a linear relationship between the current phase current information and the current loss, between the current bus voltage information and the current loss, and between the current modulation ratio information and the current loss.
2. The IGBT power module loss determination method according to claim 1, characterized in that: The IGBT power module includes a plurality of chip units for performing circuit on-off control; each of the chip units includes: a switch device of the IGBT type, and a diode connected in parallel with the switch device; the current loss of the IGBT power module is determined based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information, including: Determine the current loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; Determine the current loss of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information; Based on the current losses of all the switching devices and the current losses of all the diodes, the current losses of the IGBT power module are determined.
3. The IGBT power module loss determination method according to claim 2, characterized in that: The determining of the current loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information includes: Determine the current conduction loss of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; Determine the current switching loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; Based on the current conduction losses of all the switching devices and the current switching losses of all the switching devices, current losses of all the switching devices in the IGBT power module are determined.
4. The IGBT power module loss determination method according to claim 3, characterized in that: The current phase current information includes: the current phase current amplitude; the current power factor angle information includes: the current power factor angle; the current modulation ratio information includes: the current modulation ratio; the current conduction loss of all switching devices in the IGBT power module is determined based on the current phase current information, the current power factor angle information and the current modulation ratio information, including: Inputting the current phase current amplitude, the current power factor angle and the current modulation ratio into a pre-constructed first expression, so that the first expression outputs the current conduction loss of each of the switching devices; wherein the first expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each of the switching devices, the on-resistance of each of the switching devices and the current conduction loss of each of the switching devices, and the initial conduction voltage of each of the switching devices and the on-resistance of each of the switching devices are both constants; The sum of the current conduction losses of each of the switching devices is calculated to obtain the current conduction losses of all the switching devices in the IGBT power module.
5. The IGBT power module loss determination method according to claim 3, characterized in that: The current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; the current power factor angle information includes: the current power factor angle; the current switching loss of all switching devices in the IGBT power module is determined based on the current phase current information, the current bus voltage information and the current power factor angle information, including: Input the current phase current amplitude, the current bus voltage and the current power factor angle into a pre-constructed second expression, so that the second expression outputs the current switching loss of each switching device; wherein the second expression is pre-constructed based on the current phase current amplitude, the current bus voltage, the current power factor angle, the switching frequency of each switching device, the energy consumed when each switching device is turned on once, the energy consumed when each switching device is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module and the current switching loss of each switching device, and the switching frequency, the energy consumed when each switching device is turned on once, the energy consumed when each switching device is turned off once, the bus reference voltage value and the reference current value are all constants; The sum of the current switching losses of each of the switching devices is calculated to obtain the current switching losses of all the switching devices in the IGBT power module.
6. The IGBT power module loss determination method according to claim 3, characterized in that: The determining the current losses of all the switching devices in the IGBT power module based on the current conduction losses of all the switching devices and the current switching losses of all the switching devices comprises: The sum of the current conduction loss of all the switching devices and the current switching loss of all the switching devices is calculated to obtain the current loss of all the switching devices in the IGBT power module.
7. The IGBT power module loss determination method according to claim 2, characterized in that: The determining of the current losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information, the current power factor angle information and the current modulation ratio information comprises: Determine the current conduction loss of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; Determine the current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; Based on the current conduction losses of all the diodes and the current switching losses of all the diodes, current losses of all the diodes in the IGBT power module are determined.
8. The IGBT power module loss determination method according to claim 7, characterized in that: The current phase current information includes: the current phase current amplitude; the current power factor angle information includes: the current power factor angle; the current modulation ratio information includes: the current modulation ratio; the current conduction loss of all diodes in the IGBT power module is determined based on the current phase current information, the current power factor angle information and the current modulation ratio information, including: Inputting the current phase current amplitude, the current power factor angle and the current modulation ratio into a pre-constructed third expression, so that the third expression outputs the current conduction loss of each diode; wherein the third expression is pre-constructed based on the relationship between the current phase current amplitude, the current power factor angle, the current modulation ratio, the initial conduction voltage of each diode, the conduction resistance of each diode and the current conduction loss of each diode, and the initial conduction voltage of each diode and the conduction resistance of each diode are both constants; The sum of the current conduction loss of each diode is calculated to obtain the current conduction loss of all diodes in the IGBT power module.
9. The method for determining the IGBT power module loss according to claim 7, characterized in that: The current phase current information includes: the current phase current amplitude; the current bus voltage information includes: the current bus voltage; the current power factor angle information includes: the current power factor angle; the current switching loss of all diodes in the IGBT power module is determined based on the current phase current information, the current bus voltage information and the current power factor angle information, including: Input the current phase current amplitude, the current bus voltage and the current power factor angle into a pre-constructed fourth expression, so that the fourth expression outputs the current switching loss of each diode; wherein the fourth expression is pre-constructed based on the current phase current amplitude, the current bus voltage, the current power factor angle, the switching frequency of each switching device, the energy consumed when each diode is turned off once, the bus reference voltage value of the IGBT power module, the reference current value output by the IGBT power module and the current switching loss of each diode, and the switching frequency, the energy consumed when each diode is turned off once, the bus reference voltage value and the reference current value are all constants; The sum of the current switching losses of each diode is calculated to obtain the current switching losses of all diodes in the IGBT power module.
10. The IGBT power module loss determination method according to claim 7, characterized in that: The determining the current losses of all diodes in the IGBT power module based on the current conduction losses of all diodes and the current switching losses of all diodes comprises: The sum of the current conduction loss of all the diodes and the current switching loss of all the diodes is calculated to obtain the current loss of all the diodes in the IGBT power module.
11. The IGBT power module loss determination method according to claim 2, characterized in that: The determining the current loss of the IGBT power module based on the current loss of all the switching devices and the current loss of all the diodes comprises: The sum of the current losses of all the switching devices and the current losses of all the diodes is calculated to obtain the current loss of the IGBT power module.
12. The IGBT power module loss determination method according to claim 1, characterized in that: The method further comprises: Determine the current conduction loss of all switching devices in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; Determine the current conduction loss of all diodes in the IGBT power module based on the current phase current information, the current power factor angle information and the current modulation ratio information; Based on the current conduction losses of all the switch devices and the current conduction losses of all the diodes, a current total conduction loss of the IGBT power module is determined.
13. The IGBT power module loss determination method according to claim 1, characterized in that: The method further comprises: Determine the current switching loss of all switching devices in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; Determine the current switching losses of all diodes in the IGBT power module based on the current phase current information, the current bus voltage information and the current power factor angle information; Based on the current switching losses of all the switching devices and the current switching losses of all the diodes, a current total switching loss of the IGBT power module is determined.
14. A computer-readable storage medium storing a plurality of program codes, characterized in that: The program code is suitable for being loaded and run by a processor to execute the IGBT power module loss determination method according to any one of claims 1 to 13.
15. A computer device, characterized in that: The computer device includes a storage device and a processor, wherein the storage device stores a program code that can be run on the processor, and when the program code is executed by the processor, the IGBT power module loss determination method according to any one of claims 1 to 13 is implemented.
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