UWB reception device capable of adjusting band and gain
The UWB receiving device addresses the challenge of maintaining signal quality and stability by using a common gate low-noise amplifier and multiple variable gain amplifiers with differential error correctors and bias circuits, achieving efficient noise reduction and wideband operation.
Patent Information
- Application Number
- PCT/KR2024/001261
- Authority / Receiving Office
- WO · WO
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2023-12-21
- Filing Date
- 2024-01-26
- Publication Date
- 2025-06-26
AI Technical Summary
Existing UWB receiving devices struggle to maintain signal quality and stability while varying the reception gain and bandwidth, often leading to noise interference and reduced operational efficiency.
A UWB receiving device is designed with a common gate low-noise amplifier and multiple variable gain amplifiers, each equipped with a differential error corrector and a bias circuit to control current, allowing for adjustable bandwidth and gain without compromising signal quality.
The solution effectively minimizes noise, improves signal-to-noise ratio, and ensures stable operation across a wide frequency band (3-10 GHz) with a bandwidth of 500 MHz or more, while reducing power consumption and maintaining high signal quality.
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Figure KR2024001261_26062025_PF_FP_ABST
Abstract
Description
UWB receiver with adjustable bandwidth and gain
[0001] The present invention relates to a UWB receiving device capable of adjusting the band and gain, and more particularly, to a device in which a low-noise amplifier and a variable gain amplifier are configured in a multi-stage manner to vary the band in an ultra-wideband range, and the gain is improved by adjusting the current of the variable gain amplifier through a bias circuit.
[0002]
[0003] Ultra Wide Band (UWB) technology boasts a wide frequency range and operates in transmission power environments that do not interfere with existing wireless systems. For this reason, it was initially developed for military purposes. Initially, its transmission range was limited to around 10 meters. However, as technology has advanced, transmission distances have expanded to over 100 meters, enabling applications in a variety of fields.
[0004] With the recent advancement of artificial intelligence and the expansion of the Internet of Things, there's a growing need for ultra-wideband technology capable of precise location measurement, regardless of indoor obstacles. Ultra-wideband, as the name suggests, is a short-range wireless communication technology that utilizes a bandwidth of over 500 MHz and a frequency band of several GHz.
[0005] In general, since ultra-wideband wireless communication technology divides the frequency band into 500 MHz units and then uses it by designating channels, it is necessary to provide a gain control device that can control the band in the ultra-wideband frequency range while amplifying the received signal.
[0006] [Prior Art Literature]
[0007] 1. Korean Patent No. 10-1552896 (registered on September 8, 2015)
[0008]
[0009] The purpose of the present invention is to provide a UWB receiving device capable of varying the reception gain without degrading the operation of an amplifier by minimizing noise of a received RF signal and then adjusting the gain with the amount of current radiated to an amplifier circuit, and capable of stably varying the band (channel) in an ultra-wideband range and ensuring signal quality.
[0010]
[0011] According to an embodiment of the present invention, a UWB receiving device capable of band and gain adjustment can be provided, which comprises a common gate low-noise amplifier and a plurality of variable gain amplifiers connected to the low-noise amplifier.
[0012] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain control can be provided, wherein the low-noise amplifier is characterized by a capacitor being cross-coupled.
[0013] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain control can be provided, characterized in that the plurality of variable gain amplifiers each include a differential error corrector and a bias circuit for controlling the amount of current.
[0014] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain adjustment can be provided, wherein the plurality of variable gain amplifiers are composed of a first variable gain amplifier and a second variable gain amplifier, and the first variable gain amplifier and the second variable gain amplifier are each equipped with a pair of common source cascodes capable of differential input and output, and a resistor and an inductor are connected in series at each output terminal.
[0015] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain adjustment can be provided, characterized in that the second variable gain amplifier further includes a plurality of capacitors connected in parallel with the inductor.
[0016] In addition, according to an embodiment of the present invention, a UWB receiving device capable of adjusting the band and gain can be provided, characterized in that the second variable gain amplifier connects a transistor in series to each of the plurality of capacitors to vary the band by switching.
[0017] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain control may be provided, wherein the first variable gain amplifier and the second variable gain amplifier are connected to an input terminal of the cascode and further include a bias circuit that controls the amount of current copied to the cascode through a current mirror structure.
[0018] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain adjustment can be provided, characterized in that the bias circuit is a reference circuit of the current mirror structure that is a cascode.
[0019] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain control can be provided, wherein the bias circuit further includes a plurality of transmission gate circuits connected in parallel to the reference circuit.
[0020] In addition, according to an embodiment of the present invention, a UWB receiving device capable of band and gain control can be provided, characterized in that a cascode current mirror circuit can be added through ON / OFF of each of the transmission gate circuits.
[0021]
[0022] The present invention provides a cross-coupled common gate based low noise amplifier to minimize noise of a received RF signal, thereby facilitating input matching, improving linearity and stability, and minimizing power consumption.
[0023] In addition, the present invention can secure high quality in signal compression and noise over a large dynamic range by controlling the current copied to the first variable gain amplifier through a plurality of transmission gates and a cascode current mirror structure provided in parallel. By adding a plurality of capacitors and switching transistors provided in parallel to the second variable gain amplifier to the output stage, it has the effect of being variable to satisfy an ultra-wideband range (3-10 GHz) and a bandwidth of 500 MHz or more, and by including a differential error corrector, it has the effect of minimizing the gain error and phase error of the differential output.
[0024]
[0025] FIG. 1 is a block diagram of a UWB receiving device capable of adjusting band and gain according to an embodiment of the present invention.
[0026] Figure 2 is a low-noise amplifier, which is the 1st stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0027] FIG. 3 is a first variable gain amplifier, which is a second stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0028] FIG. 4 is a bias circuit of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0029] FIG. 5 is a graph showing the voltage gain of a first variable gain amplifier of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0030] FIG. 6 is a graph showing the ideal frequency response characteristics of each stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0031] FIG. 7 is a second variable gain amplifier, which is a third stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0032] FIG. 8 is a graph showing the voltage gain of a second variable gain amplifier of a UWB receiving device capable of band and gain adjustment according to an embodiment of the present invention.
[0033] FIG. 9 is a graph showing the voltage gain of each stage of a UWB receiving device capable of band and gain adjustment according to an embodiment of the present invention.
[0034]
[0035] Advantages and features of embodiments of the present invention, and methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.
[0036] When describing embodiments of the present invention, detailed descriptions of known functions or configurations will be omitted if they are deemed to unnecessarily obscure the gist of the invention. Furthermore, the terms described below are defined in light of their functions in the embodiments of the present invention and may vary depending on the intent or custom of the user or operator. Therefore, their definitions should be based on the overall content of this specification.
[0037] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.
[0038]
[0039] FIG. 1 is a block diagram of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 2 is a low-noise amplifier which is a 1st stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 3 is a first variable gain amplifier which is a 2nd stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 4 is a bias circuit of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 5 is a graph showing the voltage gain of a first variable gain amplifier of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 6 is a graph showing ideal frequency response characteristics of each stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, FIG. 7 is a second variable gain amplifier which is a 3rd stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention, and FIG. 8 is a graph showing a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention. The voltage gain of the second variable gain amplifier is represented in a graph, and FIG. 9 is a graph showing the voltage gain of each stage of a UWB receiving device capable of adjusting the band and gain according to an embodiment of the present invention.
[0040]
[0041] The present invention provides a UWB receiving device capable of band and gain control, comprising a common gate low-noise amplifier and a plurality of variable gain amplifiers connected to the low-noise amplifier. This device maximizes the signal-to-noise ratio of a received signal, while ensuring gain enhancement and a wide frequency band by passing the signal through the plurality of variable gain amplifiers.
[0042] Here, the plurality of variable gain amplifiers may each include a differential error corrector and a bias circuit for controlling the amount of current. The differential error corrector can correct errors in the differential output signal, and the bias circuit can control the gain of the variable gain amplifier.
[0043] The plurality of variable gain amplifiers may be composed of a first variable gain amplifier and a second variable gain amplifier.
[0044] As illustrated in FIG. 1, a UWB receiving device capable of adjusting band and gain according to an embodiment of the present invention may include a low noise amplifier (LNA, 100), a first variable gain amplifier (VGA-1st, 200), a second variable gain amplifier (VGA-2nd, 300), and bias circuits (Bias Circuits, 210, 310).
[0045] Fig. 2 is a circuit for a low-noise amplifier (100), which is capable of differential input / output by having a capacitor cross-coupled to the common gate of a pair of transistors at both ends, and corresponds to the 1st stage.
[0046] RF signal( ) when receiving a differential input signal , can be converted into . Here, the transistor ( ) considering the potential difference between the gate and source, Since the signal of opposite phase is applied through this cross-coupled capacitor, the effective transconductance can increase. Meanwhile, the resistor connected to the output terminal ( ) is a value related to voltage gain and can be adjusted during the design process.
[0047] As a result, the overall system power consumption is minimized and noise performance is improved. Furthermore, the common-gate transistor structure facilitates input matching and offers advantages in linearity and stability.
[0048] Differential output signal of the first-stage low-noise amplifier and The differential input signal is input to the first variable gain amplifier (200) including the bias circuit (210) that controls the current amount in the next stage (2nd stage).
[0049] Fig. 3 relates to a first variable gain amplifier (200), which includes a differential error corrector (220), and thus can correct gain error and phase error of a differential signal.
[0050] The differential error corrector (220) is equipped with a coupled inverter at each output stage and cascode stage, and can additionally amplify signals through a back-to-back regeneration structure. However, since it is a positive feedback structure, it is necessary to design it within a range that does not cause oscillation.
[0051] The first variable gain amplifier (200) is a circuit equipped with a pair of common source cascodes capable of differential input and output, and in which a resistor and an inductor are connected in series at each output terminal.
[0052] In addition, the first variable gain amplifier (200) includes a bias circuit (210) that is connected to the input terminal of the cascode and controls the amount of current copied to the output terminal of the cascode through a current mirror structure.
[0053] Differential signal input to the 2nd stage , The capacitor is AC coupled and input as the gate voltage of each cascode, and each gate terminal is connected to a bias circuit (210) along with a resistor.
[0054] Fig. 4 is about a bias circuit (210), which forms a first variable gain amplifier (200) and a current mirror structure, and a reference circuit (211) is a cascode (transistor , ) and current source is the circuit that is supplied.
[0055] For the circuit configured up to this point, the transconductance of the first variable gain amplifier (200) ) if we calculate it, am.
[0056] Here, is a transistor The width of ( ) and length ( ) is the ratio of is the current copied to the first variable gain amplifier (200).
[0057] In order to control the gain, which is the purpose of the present invention, a plurality of transmission gate circuits (212) are connected in parallel to the reference circuit (211) of the cascode current mirror presented above. This is a circuit that can add additional cascode current mirrors by turning the transmission gate circuit (212) on / off.
[0058] As each transmission gate is turned on, the operating circuit is a cascode structure like the above reference circuit (211), so that the amount of current copied is determined according to the width and length characteristics of each transistor. ) can be adjusted.
[0059] For example, , ,..., Transistor connected to , ,..., Both the width and length of The width of ( ) and length ( ) can be said to be the same.
[0060] now If, When it is copied to the first variable gain amplifier (200),
[0061] If, class The total width of Become is copied to the first variable gain amplifier (200),
[0062] If, class class The total width of Become is copied to the first variable gain amplifier (200).
[0063] As each transmission gate is turned on, it can be confirmed that the amount of current radiated to the first variable gain amplifier (200) decreases.
[0064] I gave a simple example, but you can change it as needed. , , ,..., By designing the width and length of the first variable gain amplifier (200) to be of various sizes, the amount of current radiated to the first variable gain amplifier (200) can be more precisely controlled.
[0065] Now, the voltage gain of the first variable gain amplifier (200) ( ) is calculated,
[0066] And, if it's close,
[0067] Here is the parasitic capacitance of the transistor included in the first variable gain amplifier (200).
[0068] As shown in Fig. 5, the voltage gain of the first variable gain amplifier (200), which is the second stage, ) can be expressed as a graph.
[0069] Meanwhile, Fig. 6 is an ideally expected graph of each stage, but when compared to the actually calculated graph of Fig. 5, it can be seen that the voltage gain drops in the high-frequency region, which can be attributed to parasitic capacitance. Therefore, to supplement the high-frequency region, it is necessary to propose a second variable gain amplifier (300), which is a third stage.
[0070] Fig. 7 relates to a second variable gain amplifier (300), which is provided with a pair of common source cascodes, and each output terminal has a resistor and an inductor connected in series, but may include multiple capacitors connected in parallel with the inductors.
[0071] In addition, the second variable gain amplifier (300) includes a bias circuit (310) that is connected to the input terminal of the cascode and controls the amount of current copied to the output terminal of the cascode through a current mirror structure.
[0072] The bias circuit (310) of the second variable gain amplifier (300) has the same structure as the bias circuit (210) of the first variable gain amplifier (200), and can control the amount of current radiated to the second variable gain amplifier (300) according to the ON / OFF of the transmission gate circuit (312). However, the width and length of the plurality of transistors of the reference circuit (311) and the transmission gate circuit (312) can be designed differently.
[0073] The second variable gain amplifier (300) has an operating frequency band determined by a plurality of capacitors (330) connected in parallel with an inductor. In addition, in order to vary the band in this operating frequency range, a transistor is connected in series to each of the plurality of capacitors and switched, thereby generating a synthetic capacitance ( ) can be adjusted.
[0074] Figure 7 is an example of three capacitors connected in parallel. and As each transistor connected in series turns ON / OFF, the composite capacitance ( )Is , , , can be adjusted.
[0075] Now, the voltage gain of the second variable gain amplifier (300) ) is calculated,
[0076] am.
[0077] Figure 8 shows the voltage gain of the second variable gain amplifier (300), which is a 3rd stage. ) is a graph showing the 1st stage and 2nd stage. Unlike the 1st stage and 2nd stage, Because it is a resonant structure, it has the characteristic of operating in a band-pass mode. As the transistor is turned on and off, it can be confirmed that the high-frequency band is expanded to a wider area. Since this graph only shows the effect for three capacitors, the band can be further expanded by connecting multiple capacitors (330).
[0078] Fig. 9(a) shows a graph showing the frequency bands of the 1st stage, 2nd stage, and 3rd stage, respectively. The 1st stage low-noise amplifier (100) was configured to have low noise characteristics and minimize power consumption, but from a frequency band perspective, it has low-pass characteristics, which are indicated by a diamond-shaped line in the graph.
[0079] The high-pass characteristic of the first variable gain amplifier (200), which is the 2nd stage, is indicated by a line in the shape of a triangle, and the high-frequency band is further expanded through the second variable gain amplifier (300), which is the 3rd stage, as can be confirmed by the graph of the line in the shape of a line.
[0080] Fig. 9(b) shows that the UWB band (3-10Gz) is included as a result of adding up the frequency bands of the 1st-stage, 2nd-stage, and 3rd-stage.
[0081]
[0082] According to an embodiment of the present invention, a cross-coupled common gate based low noise amplifier is provided to minimize noise of a received RF signal, thereby facilitating input matching, improving linearity and stability, and minimizing power consumption.
[0083] In addition, according to an embodiment of the present invention, the present invention can secure high quality in signal compression and noise over a large dynamic range by controlling the current copied to the first variable gain amplifier through a plurality of transmission gates and a cascode current mirror structure provided in parallel. By adding a plurality of capacitors and switching transistors provided in parallel to the second variable gain amplifier to the output stage, there is an effect of being able to vary to satisfy an ultra-wideband range (3-10 GHz) and a bandwidth of 500 MHz or more, and by including a differential error corrector, there is an effect of minimizing the gain error and phase error of the differential output.
[0084]
[0085] Although the above description has presented and described various embodiments of the present invention, the present invention is not necessarily limited thereto, and a person having ordinary skill in the technical field to which the present invention pertains will easily understand that various substitutions, modifications, and changes are possible within a scope that does not depart from the technical spirit of the present invention.
[0086]
[0087]
[0088] [Explanation of symbols]
[0089] 100: Low noise amplifier
[0090] 200: First variable gain amplifier
[0091] 210: Bias circuit
[0092] 211: Reference circuit
[0093] 212: Transmission gate circuit
[0094] 220: Differential error corrector
[0095] 300: Second variable gain amplifier
[0096] 310: Bias circuit
[0097] 311: Reference circuit
[0098] 312: Transmission gate circuit
[0099] 320: Differential error corrector
Claims
1. Common gate low noise amplifier; and A UWB receiving device capable of controlling the band and gain, comprising a plurality of variable gain amplifiers connected to the above low noise amplifier.
2. In claim 1, A UWB receiving device with adjustable bandwidth and gain, characterized in that the low-noise amplifier has cross-coupled capacitors.
3. In claim 1, A UWB receiving device capable of adjusting the band and gain, characterized in that the plurality of variable gain amplifiers each include a differential error corrector and a bias circuit for controlling the amount of current.
4. In claim 3, The above-mentioned plurality of variable gain amplifiers are composed of a first variable gain amplifier and a second variable gain amplifier, The first variable gain amplifier and the second variable gain amplifier are each equipped with a pair of common source cascodes capable of differential input and output. A UWB receiver with adjustable bandwidth and gain, characterized in that each output terminal has a resistor and an inductor connected in series.
5. In claim 4, The above second variable gain amplifier is, A UWB receiving device capable of adjusting the band and gain, characterized by further comprising a plurality of capacitors connected in parallel with the inductor.
6. In claim 5, The above second variable gain amplifier is, A UWB receiving device capable of controlling the band and gain, characterized in that a transistor is connected in series to each of the plurality of capacitors, and the band is varied by switching.
7. In claim 4, The above first variable gain amplifier and the second variable gain amplifier, A bias circuit connected to the input terminal of the above cascode and controlling the amount of current copied to the above cascode through a current mirror structure; A UWB receiving device with adjustable band and gain including:
8. In claim 7, A UWB receiving device capable of adjusting the band and gain, characterized in that the above bias circuit has a reference circuit of the current mirror structure that is a cascode.
9. In claim 8, A UWB receiving device capable of adjusting the band and gain, wherein the above bias circuit further includes a plurality of transmission gate circuits connected in parallel to the above reference circuit.
10. In claim 9, A UWB receiving device capable of adjusting the band and gain, characterized in that a cascode current mirror circuit can be added through turning on / off each of the above transmission gate circuits.
Citation Information
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