Display device

Abstract

Provided is a highly reliable display device. The display device includes a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-blocking layer. The first light-emitting device includes a first pixel electrode, a first electroluminescence layer disposed above the first pixel electrode, and a common electrode disposed above the first electroluminescence layer. The second light-emitting device includes a second pixel electrode, a second electroluminescence layer disposed above the second pixel electrode, and a common electrode disposed above the second electroluminescence layer. The first layer is located above the first conductive layer. The first pixel electrode contacts an upper surface and a side surface of the first layer and an upper surface of the first conductive layer. The second layer is located above the second conductive layer. The second pixel electrode contacts an upper surface and a side surface of the second layer and an upper surface of the second conductive layer. The light-blocking layer has a section which is located between the first pixel electrode and the second pixel electrode.

Description

display device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device, a display module, and an electronic device. 2. Description of the Related Art One embodiment of the present invention relates to a manufacturing method of a display device.

[0002] One embodiment of the present invention is not limited to the above technical field, and examples of the technical field of one embodiment of the present invention include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, an input device (for example, a touch sensor), an input / output device (for example, a touch panel), a driving method thereof, or a manufacturing method thereof.

[0003] In recent years, display devices have been expected to be used in a variety of applications. For example, applications of large display devices include home television devices (also referred to as televisions or television receivers), digital signage, and public information displays (PIDs). Furthermore, development of mobile information terminals, such as smartphones and tablet terminals equipped with touch panels, is progressing.

[0004] There is also a demand for higher definition display devices. Devices requiring high-definition display devices, such as devices for virtual reality (VR), augmented reality (AR), substitutional reality (SR), and mixed reality (MR), are being actively developed.

[0005] As a display device, for example, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing an electroluminescence (hereinafter referred to as EL) phenomenon has features such as being easily thin and lightweight, being capable of high-speed response to an input signal, and being capable of being driven by a DC constant voltage power supply, and is therefore applied to a display device.

[0006] Patent Document 1 discloses a display device for VR that uses an organic EL device (also called an organic EL element).

[0007] International Publication No. 2018 / 087625

[0008] An object of one embodiment of the present invention is to provide a highly reliable display device.An object of one embodiment of the present invention is to provide a display device with high contrast.An object of one embodiment of the present invention is to provide a display device with high visibility.An object of one embodiment of the present invention is to provide a display device with high luminance.An object of one embodiment of the present invention is to provide a display device with high definition.An object of one embodiment of the present invention is to provide a display device with high resolution.An object of one embodiment of the present invention is to provide a novel display device.

[0009] An object of one embodiment of the present invention is to provide a method for manufacturing a highly reliable display device.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high contrast.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high visibility.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high luminance.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high definition.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high resolution.An object of one embodiment of the present invention is to provide a method for manufacturing a display device with high productivity.An object of one embodiment of the present invention is to provide a novel method for manufacturing a display device.

[0010] Note that the description of these problems does not preclude the existence of other problems. One embodiment of the present invention does not necessarily have to solve all of these problems. Problems other than these can be extracted from the description in the specification, drawings, and claims.

[0011] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-shielding layer. The first light-emitting device includes a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. The second light-emitting device includes a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer. The first layer is located on the first conductive layer. The first pixel electrode is in contact with the top and side surfaces of the first layer and the top surface of the first conductive layer. The second layer is located on the second conductive layer. The second pixel electrode is in contact with the top and side surfaces of the second layer and the top surface of the second conductive layer. The light-shielding layer has a portion located between the first pixel electrode and the second pixel electrode.

[0012] In the display device described above, an edge of the first EL layer is preferably in contact with the upper surface of the light-shielding layer, and an edge of the second EL layer is preferably in contact with the upper surface of the light-shielding layer.

[0013] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-shielding layer. The first light-emitting device includes a first pixel electrode, a third conductive layer on the first pixel electrode, a first EL layer on the third conductive layer, and a common electrode on the first EL layer. The second light-emitting device includes a second pixel electrode, a fourth conductive layer on the second pixel electrode, a second EL layer on the fourth conductive layer, and a common electrode on the second EL layer. The first layer is located on the first conductive layer. The first pixel electrode is in contact with the top and side surfaces of the first layer and the top surface of the first conductive layer. The second layer is located on the second conductive layer. The second pixel electrode is in contact with the top and side surfaces of the second layer and the top surface of the second conductive layer. The light-shielding layer has a region located between the first pixel electrode and the second pixel electrode, an end of the third conductive layer contacts the upper surface of the light-shielding layer, and an end of the fourth conductive layer contacts the upper surface of the light-shielding layer.

[0014] In the above-described display device, the third conductive layer and the fourth conductive layer each preferably contain a metal oxide.

[0015] In the display device described above, it is preferable that an edge of the third conductive layer coincides or substantially coincides with an edge of the first EL layer, and an edge of the fourth conductive layer coincides or substantially coincides with an edge of the second EL layer.

[0016] In the display device described above, the height of the upper surface of the first pixel electrode is preferably higher than the height of the upper surface of the light-shielding layer, and the height of the upper surface of the second pixel electrode is preferably higher than the height of the upper surface of the light-shielding layer.

[0017] In the display device described above, the light-shielding layer preferably contains a resin.

[0018] In the above-described display device, the first layer and the second layer each preferably contain a resin.

[0019] The display device preferably includes a first insulating layer. The first conductive layer, the second conductive layer, and the light-shielding layer are preferably in contact with an upper surface of the first insulating layer. The light-shielding layer preferably has a region having a thickness of 200 nm to 2000 nm between the first pixel electrode and the second pixel electrode.

[0020] The display device preferably includes a second insulating layer having regions in contact with the side surfaces of the first EL layer, the side surfaces of the second EL layer, and the upper surface of the light-shielding layer.

[0021] According to one embodiment of the present invention, a highly reliable display device can be provided. According to one embodiment of the present invention, a display device with high contrast can be provided. According to one embodiment of the present invention, a display device with high visibility can be provided. According to one embodiment of the present invention, a display device with high luminance can be provided. According to one embodiment of the present invention, a display device with high definition can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. According to one embodiment of the present invention, a novel display device can be provided.

[0022] According to one embodiment of the present invention, a method for manufacturing a highly reliable display device can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high contrast can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high visibility can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high luminance can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high definition can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high resolution can be provided. According to one embodiment of the present invention, a method for manufacturing a display device with high productivity can be provided. According to one embodiment of the present invention, a method for manufacturing a novel display device can be provided.

[0023] Note that the description of these effects does not preclude the existence of other effects. One embodiment of the present invention does not necessarily have all of these effects. Effects other than these can be extracted from the description in the specification, drawings, and claims.

[0024] FIG. 1A is a top view showing an example of a display device. FIG. 1B is a cross-sectional view showing an example of a display device. FIG. 2 is a cross-sectional view showing an example of a display device. FIGS. 3A to 3D are top views showing an example of a display device. FIGS. 4A to 4C are cross-sectional views showing an example of a display device. FIGS. 5A to 5C are cross-sectional views showing an example of a display device. FIGS. 6A and 6B are cross-sectional views showing an example of a display device. FIGS. 7A and 7B are cross-sectional views showing an example of a display device. FIGS. 8A and 8B are cross-sectional views showing an example of a display device. FIGS. 9A and 9B are cross-sectional views showing an example of a display device. FIGS. 10A and 10B are cross-sectional views showing an example of a display device. FIGS. 11A and 11B are cross-sectional views showing an example of a display device. FIGS. 12A and 12B are cross-sectional views showing an example of a display device. FIGS. 13A to 13D are top views showing an example of a display device. FIGS. 14A to 14E are cross-sectional views showing an example of a display device. FIGS. 15A and 15B are cross-sectional views showing an example of a display device. FIGS. 16A and 16B are cross-sectional views showing an example of a display device. 17A and 17B are cross-sectional views showing an example of a display device. FIG. 18 is a cross-sectional view showing an example of a display device. FIGS. 19A and 19B are cross-sectional views showing an example of a display device. FIGS. 20A and 20B are cross-sectional views showing an example of a display device. FIG. 21 is a cross-sectional view showing an example of a display device. FIG. 22A is a top view showing an example of a display device. FIG. 22B is a cross-sectional view showing an example of a display device. FIGS. 23A to 23C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 24A to 24C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 25A to 25C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 26A to 26C are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 27A and 27B are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 28A and 28B are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 29A and 29B are cross-sectional views showing an example of a manufacturing method of a display device. FIGS. 30A and 30B are cross-sectional views showing an example of a manufacturing method of a display device. 31A and 31B are cross-sectional views showing an example of a method for manufacturing a display device.32A and 32B are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 33A and 33B are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 34A and 34B are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 35A and 35B are cross-sectional views showing an example of a method for manufacturing a display device. FIGS. 36A to 36G are views showing an example of a pixel. FIGS. 37A to 37K are views showing an example of a pixel. FIGS. 38A and 38B are perspective views showing an example of a display device. FIG. 39 is a cross-sectional view showing an example of a display device. FIGS. 40A and 40B are cross-sectional views showing an example of a display device. FIG. 41 is a cross-sectional view showing an example of a display device. FIG. 42 is a cross-sectional view showing an example of a display device. FIG. 43 is a cross-sectional view showing an example of a display device. FIG. 44 is a cross-sectional view showing an example of a display device. FIG. 45 is a cross-sectional view showing an example of a display device. FIG. 46 is a perspective view showing an example of a display device. FIG. 47A is a cross-sectional view showing an example of a display device. FIGS. 47B and 47C are cross-sectional views showing an example of a transistor. FIG. 48A is a cross-sectional view showing an example of a display device. 48B and 48C are cross-sectional views showing an example of a transistor. FIG. 49 is a cross-sectional view showing an example of a display device. FIG. 50 is a cross-sectional view showing an example of a display device. FIGS. 51A to 51F are diagrams showing an example of a configuration of a light-emitting device. FIGS. 52A and 52B are diagrams showing an example of a configuration of a light-receiving device. FIGS. 52C to 52E are diagrams showing an example of a configuration of a display device. FIGS. 53A to 53D are diagrams showing an example of an electronic device. FIGS. 54A to 54F are diagrams showing an example of an electronic device. FIGS. 55A to 55G are diagrams showing an example of an electronic device. FIGS. 56A and 56B are STEM images of a sample according to an example. FIG. 57 is a STEM image of a sample according to an example. FIG. 58 is a diagram showing the transmittance of a sample according to an example. FIG. 59 is a diagram showing the reliability of a transistor according to an example. FIG. 60 is a diagram showing the luminance of a display device according to an example.

[0025] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes can be made in form and detail without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. Furthermore, when referring to similar functions, the same hatching pattern may be used and no particular reference numeral may be assigned.

[0027] For ease of understanding, the position, size, range, etc. of each component shown in the drawings may not represent the actual position, size, range, etc. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

[0028] In this specification, the ordinal numbers such as "first" and "second" are used for convenience and do not limit the number of components or the order of the components (for example, the order of processes or the order of stacking). Furthermore, the ordinal numbers assigned to components in one part of this specification may not match the ordinal numbers assigned to the same components in other parts of this specification or in the claims.

[0029] In this specification and drawings, when the same reference numeral is used for multiple elements, and particularly when it is necessary to distinguish between them, an identification symbol such as "_1", "[n]", or "[m, n]" may be added to the reference numeral. Furthermore, when explaining matters common to multiple elements to which an identification numeral is added, or when it is not necessary to distinguish between them, the elements may be described without the identification numeral.

[0030] The words "film" and "layer" can be interchangeable in some cases or depending on the situation. For example, the term "conductive layer" can be changed to the term "conductive film." Or, for example, the term "insulating film" can be changed to the term "insulating layer."

[0031] A transistor is a type of semiconductor element that can perform functions such as amplifying current or voltage and performing switching operations to control conduction or non-conduction. The term "transistor" as used herein includes an insulated gate field effect transistor (IGFET) and a thin film transistor (TFT).

[0032] The functions of "source" and "drain" may be interchanged when transistors of different polarities are used or when the direction of current changes during circuit operation. For this reason, the terms "source" and "drain" may be used interchangeably in this specification. The source and drain of a transistor may be appropriately referred to as the source terminal and drain terminal, or the source electrode and drain electrode, depending on the situation.

[0033] The terms "gate" and "back gate" can be used interchangeably. Therefore, in this specification and the like, the terms "gate" and "back gate" can be used interchangeably. Note that the names of the gate and back gate of a transistor can be appropriately changed to gate electrode and back gate electrode, etc., depending on the situation.

[0034] In this specification, "connection" includes, as an example, "electrical connection." Note that the term "electrical connection" is sometimes used to define the connection relationship between circuit elements as an object. Furthermore, "electrical connection" includes "direct connection" and "indirect connection." "A and B are directly connected" means that A and B are connected without the intervention of a circuit element (e.g., a transistor, a switch, etc.; wiring is not considered a circuit element). On the other hand, "A and B are indirectly connected" means that A and B are connected via one or more circuit elements.

[0035] For example, assuming that a circuit including A and B is operating, if there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B, then it can be defined that "A and B are indirectly connected" as objects. Note that even if there is a time during the operation of the circuit when no electrical signal is exchanged or an interaction of electrical potential occurs between A and B, it can still be defined that "A and B are indirectly connected" as long as there is a time during the operation of the circuit when an electrical signal is exchanged or an interaction of electrical potential occurs between A and B.

[0036] An example of a case where "A and B are indirectly connected" is when A and B are connected via the source and drain of one or more transistors. On the other hand, an example of a case where it cannot be said that "A and B are indirectly connected" is when an insulator is present in the path from A to B. Specifically, there are cases where a capacitive element is connected between A and B, and cases where a gate insulating film of a transistor is present between A and B. Therefore, it cannot be said that "the gate (A) of a transistor and the source or drain (B) of the transistor are indirectly connected."

[0037] Another example of a case where it cannot be said that "A and B are indirectly connected" is when multiple transistors are connected via their sources and drains to the path from A to B, and a constant potential V is supplied to a node between one transistor and another transistor from a power supply, GND, etc.

[0038] In this specification, unless otherwise specified, the on-state current refers to the drain current (also referred to as Id) when a transistor is in an on state (also referred to as a conductive state). Unless otherwise specified, the on state refers to a state in which the gate-source voltage (also referred to as Vg or Vgs) is equal to or higher than a threshold voltage (also referred to as Vth) for an n-channel transistor, or a state in which the gate-source voltage is equal to or lower than the threshold voltage for a p-channel transistor.

[0039] In this specification and the like, unless otherwise specified, the off-state current refers to a leakage current between the source and drain when a transistor is in an off state (also referred to as a non-conducting state or a cut-off state). Unless otherwise specified, the off-state refers to a state in which the voltage between the gate and the source is lower than the threshold voltage in an n-channel transistor, and higher than the threshold voltage in a p-channel transistor.

[0040] In this specification, "parallel" refers to a state in which two straight lines are arranged at an angle of -10 degrees or more and 10 degrees or less. Therefore, it also includes cases in which the angle is -5 degrees or more and 5 degrees or less. Furthermore, "substantially parallel" refers to a state in which two straight lines are arranged at an angle of -30 degrees or more and 30 degrees or less. Furthermore, "perpendicular" refers to a state in which two straight lines are arranged at an angle of 80 degrees or more and 100 degrees or less. Therefore, it also includes cases in which the angle is 85 degrees or more and 95 degrees or less. Furthermore, "substantially perpendicular" refers to a state in which two straight lines are arranged at an angle of 60 degrees or more and 120 degrees or less.

[0041] In this specification, the phrase "top surface shapes that match or approximately match" refers to at least a portion of the contours of stacked layers overlapping. For example, this includes cases where the upper and lower layers are processed using the same mask pattern or a portion of the same mask pattern. However, strictly speaking, the contours may not overlap, and the upper layer may be located inside the lower layer, or outside the lower layer. In these cases, the phrase "top surface shapes that match or approximately match" may also be used. Furthermore, when the top surface shapes match or approximately match, it can also be said that "edges match or approximately match" or "edges are aligned or approximately aligned."

[0042] In this specification, a tapered shape refers to a shape in which at least a portion of the side surface of a structure is inclined relative to the substrate surface or the surface to be formed. For example, it is preferable to have a region in which the angle (also called the taper angle) between the inclined side surface and the substrate surface or the surface to be formed is less than 90 degrees. Note that the side surface of the structure, the substrate surface, and the surface to be formed do not necessarily have to be completely flat, and may be approximately planar with a slight curvature or approximately planar with a slight unevenness.

[0043] In this specification and the like, the term "step discontinuity" refers to a phenomenon in which a layer, film, or electrode is separated due to the shape of the surface on which it is formed (for example, a step or the like).

[0044] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure. Because devices with an MML structure can be manufactured without using a metal mask, they can exceed the upper limit of resolution due to the alignment accuracy of the metal mask. Furthermore, devices with an MML structure can eliminate the need for equipment for manufacturing metal masks and a metal mask cleaning process. Furthermore, devices with an MML structure are suitable for mass production because they can keep manufacturing costs low.

[0045] In this specification and the like, a structure in which light-emitting layers are separately formed for light-emitting elements (also referred to as light-emitting devices) with different emission wavelengths is sometimes referred to as an SBS (Side By Side) structure. The SBS structure allows the materials and configuration to be optimized for each light-emitting element, thereby widening the range of material and configuration options and facilitating improvements in brightness and reliability.

[0046] In this specification and the like, holes or electrons may be referred to as "carriers." For example, in a light-emitting element, a hole injection layer or an electron injection layer may be referred to as a "carrier injection layer," a hole transport layer or an electron transport layer may be referred to as a "carrier transport layer," and a hole block layer or an electron block layer may be referred to as a "carrier block layer." Note that the above-mentioned carrier injection layer, carrier transport layer, and carrier block layer may not be clearly distinguishable. Furthermore, one layer may have two or three functions among the carrier injection layer, carrier transport layer, and carrier block layer.

[0047] In this specification and the like, a light-emitting element has an EL layer between a pair of electrodes. The EL layer has at least a light-emitting layer. Here, examples of layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier injection layer (a hole injection layer and an electron injection layer), a carrier transport layer (a hole transport layer and an electron transport layer), and a carrier block layer (a hole block layer and an electron block layer). In this specification and the like, a light-receiving element (also referred to as a light-receiving device) has at least an active layer that functions as a photoelectric conversion layer between a pair of electrodes. In this specification and the like, one of the pair of electrodes may be referred to as a pixel electrode, and the other as a common electrode.

[0048] In this specification, the term "island-like" refers to a state in which two or more layers made of the same material and formed in the same process are physically separated. For example, an island-like light-emitting layer refers to a state in which the light-emitting layer is physically separated from an adjacent light-emitting layer.

[0049] In this specification and the like, the mask layer is located above at least the light-emitting layer (more specifically, the layer that is processed into an island shape among the layers that constitute the EL layer) and has the function of protecting the light-emitting layer during the manufacturing process.

[0050] Embodiment 1 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 1A to 22. FIG.

[0051] In this embodiment, a structure of a display device according to one embodiment of the present invention will be mainly described, and a manufacturing method of the display device according to one embodiment of the present invention will be described in detail in Embodiment 2.

[0052] One embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-blocking layer.

[0053] A first light-emitting device and a second light-emitting device are provided on the layer including the transistors. The first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. The second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and a common electrode on the second EL layer.

[0054] The first layer is located on the first conductive layer. The first pixel electrode contacts the top and side surfaces of the first layer and the top surface of the first conductive layer. The first layer is preferably encapsulated by the first conductive layer and the first pixel electrode. The second layer is located on the second conductive layer. The second pixel electrode contacts the top and side surfaces of the second layer and the top surface of the second conductive layer. The second layer is preferably encapsulated by the second conductive layer and the second pixel electrode.

[0055] The light-shielding layer has a portion located between the first pixel electrode and the second pixel electrode. By providing the light-shielding layer between the first pixel electrode and the second pixel electrode, light from outside the display device (also referred to as external light) or light emitted from the light-emitting device is prevented from entering the transistor. This can prevent the electrical characteristics of the transistor from fluctuating due to light, resulting in a highly reliable transistor. Therefore, a highly reliable display device can be obtained.

[0056] Increasing the thickness of the light-shielding layer can improve the light-shielding properties. However, if the light-shielding layer is also provided on the upper surface of the first pixel electrode by increasing the thickness, the contact area between the first pixel electrode and the first EL layer may be reduced, potentially reducing the area of ​​the light-emitting region of the first light-emitting device. Therefore, it is more preferable that the height of the upper surface of the first pixel electrode is higher than the height of the upper surface of the light-shielding layer. By providing a first layer between the first pixel electrode and the first conductive layer, the height of the upper surface of the first pixel electrode can be increased. This allows the area of ​​the light-emitting region of the first light-emitting device to be increased. The same applies to the second light-emitting device.

[0057] FIG. 1A shows a top view (also referred to as a plan view) of a display device 100 according to one embodiment of the present invention. The display device 100 includes a display portion in which a plurality of pixels 110 are arranged and a connection portion 140 located outside the display portion. A plurality of subpixels are arranged in a matrix in the display portion. FIG. 1A shows two rows and six columns of subpixels, which together form two rows and two columns of pixels 110. The connection portion 140 can also be called a cathode contact portion.

[0058] The top surface shape of the sub-pixel shown in FIG. 1A corresponds to the top surface shape of the light-emitting region.

[0059] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0060] The circuit layout constituting the subpixel is not limited to the range of the subpixel shown in Fig. 1A and can be arranged outside of it. For example, the transistor included in the subpixel 11R can be located within the range of the subpixel 11G shown in Fig. 1A, and part or all of the transistor can be located outside the range of the subpixel 11R.

[0061] 1A shows the areas of the light-emitting regions of the subpixels 11R, 11G, and 11B as being equal or approximately equal, and the aperture ratios as being equal or approximately equal, but one embodiment of the present invention is not limited to this. The aperture ratios of the subpixels 11R, 11G, and 11B can be determined as appropriate. The aperture ratios of the subpixels 11R, 11G, and 11B can also be different from one another. Alternatively, any two or more of the subpixels 11R, 11G, and 11B can be equal or approximately equal.

[0062] A stripe arrangement is applied to the pixel 110 shown in FIG. 1A. The pixel 110 shown in FIG. 1A is composed of three subpixels: subpixel 11R, subpixel 11G, and subpixel 11B. The subpixels 11R, 11G, and 11B each have a light-emitting device that emits a different light color. Examples of the subpixels 11R, 11G, and 11B include subpixels of three colors: red (R), green (G), and blue (B), and subpixels of three colors: yellow (Y), cyan (C), and magenta (M). The number of types of subpixels is not limited to three and can be four or more. Examples of the four subpixels include subpixels of four colors: R, G, B, and white (W), subpixels of four colors: R, G, B, and Y, and subpixels of R, G, B, and infrared (IR).

[0063] In this specification and the like, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly (see FIG. 1A ). FIG. 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction.

[0064] 1A shows an example in which the connection unit 140 is located on one side of the display unit when viewed from above (also referred to as a plan view), but this is not particularly limited thereto. The connection unit 140 can be provided in at least one location on the upper, right, left, or lower side of the display unit when viewed from above, and can also be provided so as to surround all four sides of the display unit, for example. The shape of the upper surface of the connection unit 140 can be strip-shaped, L-shaped, U-shaped, frame-shaped, or the like. Furthermore, the connection unit 140 can be singular or plural.

[0065] [Configuration Example 1] Fig. 1B shows a cross-sectional view taken along the dashed dotted line X1-X2 in Fig. 1A. Fig. 2 shows an enlarged view of a portion of the cross-sectional view shown in Fig. 1B.

[0066] Conductive layers 105R, 105G, and 105B are provided on layer 101. Layer 107R is provided on conductive layer 105R, and light-emitting device 130R is provided on layer 107R. Layer 107G is provided on conductive layer 105G, and light-emitting device 130G is provided on layer 107G. Layer 107B is provided on conductive layer 105B, and light-emitting device 130B is provided on layer 107B. Protective layer 131 is provided to cover light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. Substrate 120 is attached to protective layer 131 with resin layer 122.

[0067] The layer 101 includes one or more of a transistor, a capacitor, and a wiring. The layer 101 may include a pixel circuit for controlling the driving of the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are electrically connected to one or more of the transistor, the capacitor, and the wiring included in the layer 101. FIG. 1B illustrates a configuration in which the layer 101 includes a substrate 103, an insulating layer 104, a conductive layer 250R, a conductive layer 250G, a conductive layer 250B, a plug 256R, a plug 256G, and a plug 256B. The conductive layer 250R, the conductive layer 250G, and the conductive layer 250B are provided on the substrate 103. The conductive layer 250R, the conductive layer 250G, and the conductive layer 250B correspond to an electrode of a transistor, an electrode of a capacitor, or a wiring, respectively. An insulating layer 104 is provided over the conductive layer 250R, the conductive layer 250G, and the conductive layer 250B. The insulating layer 104 can have a single-layer structure or a stacked-layer structure.

[0068] The insulating layer 104 can be an inorganic insulating layer, an organic insulating layer, or both. Examples of materials that can be used for the organic insulating layer include acrylic resin and polyimide resin. Examples of materials that can be used for the inorganic insulating layer include oxides, nitrides, oxynitrides, and nitride oxides. Examples of oxides include silicon oxide, aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, tantalum oxide, cerium oxide, gallium zinc oxide, and hafnium aluminate. Examples of nitrides include silicon nitride and aluminum nitride. Examples of oxynitrides include silicon oxynitride, aluminum oxynitride, gallium oxynitride, yttrium oxynitride, and hafnium oxynitride. Examples of nitride oxides include silicon nitride oxide and aluminum nitride oxide.

[0069] In this specification and the like, an oxynitride refers to a material having a composition in which oxygen is contained in a larger amount than nitrogen, and a nitride oxide refers to a material having a composition in which nitrogen is contained in a larger amount than oxygen.

[0070] The light-emitting device 130R has a pixel electrode 111R on the layer 107R, an island-shaped layer 113R on the pixel electrode 111R, a common layer 114 on the layer 113R, and a common electrode 115 on the common layer 114. In the light-emitting device 130R, the layer 113R and the common layer 114 can be collectively referred to as an EL layer.

[0071] The light-emitting device 130G has a pixel electrode 111G on the layer 107G, an island-shaped layer 113G on the pixel electrode 111G, a common layer 114 on the layer 113G, and a common electrode 115 on the common layer 114. In the light-emitting device 130G, the layer 113G and the common layer 114 can be collectively referred to as an EL layer.

[0072] Light-emitting device 130B has pixel electrode 111B on layer 107B, island-shaped layer 113B on pixel electrode 111B, common layer 114 on layer 113B, and common electrode 115 on common layer 114. In light-emitting device 130B, layer 113B and common layer 114 can be collectively referred to as an EL layer.

[0073] In this specification and the like, among the EL layers included in the light-emitting devices, layers provided in an island shape for each light-emitting device are referred to as layer 113B, layer 113G, or layer 113R, and a layer shared by a plurality of light-emitting devices is referred to as common layer 114. Note that in this specification and the like, the layer 113R, layer 113G, and layer 113B may be referred to as an island-shaped EL layer or an EL layer formed in an island shape, without including the common layer 114.

[0074] The layers 113R, 113G, and 113B are spaced apart from one another. By providing an island-shaped EL layer for each light-emitting device, leakage current between adjacent light-emitting devices can be suppressed. This prevents unintended light emission due to crosstalk, and realizes a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0075] The pixel electrodes (pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B) that function as a pair of electrodes of the light-emitting device and the common electrode 115 can be made of metals, alloys, electrically conductive compounds, mixtures thereof, or the like, as appropriate. Specific examples of such materials include metals such as aluminum, magnesium, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, and neodymium, and alloys containing appropriate combinations of these metals. Other examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (ITSO), indium zinc oxide (In—Zn oxide), and In—W—Zn oxide. Examples of the material include aluminum-containing alloys (aluminum alloys), such as an alloy of aluminum, nickel, and lanthanum (Al-Ni-La), and silver-containing alloys, such as an alloy of silver and magnesium and an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC).Other examples of the material include elements belonging to Group 1 or Group 2 of the periodic table (e.g., lithium, cesium, calcium, and strontium), rare earth metals such as europium and ytterbium, alloys containing appropriate combinations of these, and graphene.

[0076] Of the pair of electrodes that a light-emitting device has, one electrode functions as an anode and the other electrode functions as a cathode. In the following, an example in which the pixel electrode functions as the anode and the common electrode functions as the cathode will be described.

[0077] The pixel electrodes 111R, 111G, and 111B may be formed in the same process. In the following description, the pixel electrodes 111R, 111G, and 111B may be collectively referred to as pixel electrodes 111.

[0078] A conductive layer 105R is provided on the insulating layer 104, a layer 107R is provided on the conductive layer 105R, and a pixel electrode 111R is provided on the layer 107R. The layer 107R has a region in contact with the top surface of the conductive layer 105R. The pixel electrode 111R has a region in contact with the top and side surfaces of the layer 107R and the top surface of the conductive layer 105R. The pixel electrode 111R is electrically connected to the conductive layer 105R.

[0079] A conductive layer 105G is provided on the insulating layer 104, a layer 107G is provided on the conductive layer 105G, and a pixel electrode 111G is provided on the layer 107G. The layer 107G has a region in contact with the top surface of the conductive layer 105G. The pixel electrode 111G has a region in contact with the top surface and side surfaces of the layer 107G and the top surface of the conductive layer 105G. The pixel electrode 111G is electrically connected to the conductive layer 105G.

[0080] A conductive layer 105B is provided on the insulating layer 104, a layer 107B is provided on the conductive layer 105B, and a pixel electrode 111B is provided on the layer 107B. The layer 107B has a region in contact with the top surface of the conductive layer 105B. The pixel electrode 111B has a region in contact with the top surface and side surfaces of the layer 107B and the top surface of the conductive layer 105B. The pixel electrode 111B is electrically connected to the conductive layer 105B.

[0081] In the following description, the conductive layers 105R, 105G, and 105B may be collectively referred to as the conductive layers 105. Similarly, the layers 107R, 107G, and 107B may be collectively referred to as the layers 107.

[0082] The conductive layers 105R, 105G, and 105B can each have a single-layer structure or a stacked structure of two or more layers. Materials that can be used for these layers include, for example, one or more of chromium, copper, aluminum, gold, silver, zinc, tantalum, titanium, tungsten, manganese, nickel, iron, cobalt, molybdenum, and niobium, as well as alloys containing one or more of the aforementioned metals. The conductive layers 105R, 105G, and 105B can each be preferably made of a conductive material with low electrical resistivity, including one or more of copper, silver, gold, and aluminum. Copper and aluminum are particularly preferred because of their excellent mass productivity.

[0083] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can each include an oxide conductor. Examples of oxide conductors include indium oxide, zinc oxide, In—Sn oxide (ITO), In—Zn oxide (also referred to as IZO (registered trademark)), In—W oxide, In—W—Zn oxide, In—Ti oxide, In—Ti—Sn oxide, In—Sn—Si oxide (also referred to as ITO containing silicon, ITSO), zinc oxide doped with gallium, In—Ga—Zn oxide (also referred to as IGZO), and In—Sn—Zn oxide (also referred to as ITZO (registered trademark)). Oxide conductors containing indium are particularly preferred because of their high conductivity.

[0084] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can each have a stacked structure of a conductive film containing the oxide conductor and a conductive film containing a metal or an alloy. By using a conductive film containing a metal or an alloy, wiring resistance can be reduced.

[0085] Each of the conductive layers 105R, 105G, and 105B may be a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). By using a Cu-X alloy film, the layers can be processed by wet etching, thereby reducing manufacturing costs.

[0086] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B can be formed in the same process, for example.

[0087] 3A shows a top view of conductive layer 105R, conductive layer 105G, and conductive layer 105B. FIG. 3B shows a top view of FIG. 3A with layers 107R, 107G, and 107B added. As shown in FIG. 3B, in the top view, it is preferred that conductive layer 105R includes layer 107R, conductive layer 105G includes layer 107G, and conductive layer 105B includes layer 107B.

[0088] FIG. 3C shows a top view of FIG. 3B with pixel electrodes 111R, 111G, and 111B added. As shown in FIG. 3C , in a top view, it is preferable that the pixel electrode 111R encompasses the layer 107R. The layer 107R is surrounded by the pixel electrode 111R and the conductive layer 105R. Furthermore, the pixel electrode 111R and the conductive layer 105R each have a portion that protrudes beyond the edge of the layer 107R. This increases the contact area between the pixel electrode 111R and the conductive layer 105R, thereby reducing the contact resistance between the pixel electrode 111R and the conductive layer 105R. Similarly, in a top view, it is preferable that the pixel electrode 111G encompasses the layer 107G. The layer 107G is surrounded by the pixel electrode 111G and the conductive layer 105G. Furthermore, the pixel electrode 111G and the conductive layer 105G each have a portion that protrudes beyond the edge of the layer 107G. This increases the contact area between the pixel electrode 111G and the conductive layer 105G, thereby reducing the contact resistance between the pixel electrode 111G and the conductive layer 105G. In top view, it is preferable that the pixel electrode 111B encompasses the layer 107B. The layer 107B is encompassed by the pixel electrode 111B and the conductive layer 105B. Furthermore, the pixel electrode 111B and the conductive layer 105B each have a portion that protrudes beyond the end of the layer 107B. This increases the contact area between the pixel electrode 111B and the conductive layer 105B, thereby reducing the contact resistance between the pixel electrode 111B and the conductive layer 105B.

[0089] A configuration is possible in which the edge of the pixel electrode 111R coincides or substantially coincides with the edge of the conductive layer 105R, the edge of the pixel electrode 111G coincides or substantially coincides with the edge of the conductive layer 105G, and the edge of the pixel electrode 111B coincides or substantially coincides with the edge of the conductive layer 105B. For example, a first conductive film that will become the conductive layers 105R, 105G, and 105B is formed on the insulating layer 104. Layers 107R, 107G, and 107B are formed on the first conductive film. A second conductive film that will become the pixel electrodes 111R, 111G, and 111B is formed on the first conductive film, the layers 107R, 107G, and 107B. Then, the first conductive film and the second conductive film are processed to form the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B. This allows the edges of the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B to coincide or approximately coincide with the edges of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B. Processing the first conductive film and the second conductive film in the same process can improve the productivity of the display device and reduce manufacturing costs. It is also possible to configure the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B so that the edges of the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B do not coincide with each other.

[0090] The conductive layer 105R and the pixel electrode 111R can be preferably made of the same material. Alternatively, if the pixel electrode 111R has a stacked structure, the conductive layer 105R can be made of the same material as one or more layers of the stacked structure. This allows the conductive layer 105R and the pixel electrode 111R to be formed in the same process, thereby improving productivity. For example, the pixel electrode 111R can have a stacked structure of a first titanium film, an aluminum film on the first titanium film, and a second titanium film on the aluminum film. The conductive layer 105R can have a single-layer structure of a third titanium film. The same applies to the conductive layer 105G, the conductive layer 105B, the pixel electrode 111G, and the pixel electrode 111B.

[0091] FIG. 3D shows a top view of FIG. 3C with a light-shielding layer 109 added. As shown in FIG. 3D , the light-shielding layer 109 is provided between adjacent pixel electrodes 111 in a top view. The light-shielding layer 109 is provided, for example, between pixel electrode 111R and pixel electrode 111G, and between pixel electrode 111G and pixel electrode 111B. The light-shielding layer 109 is provided in a region where none of layers 107R, 107G, and 107B is provided. Note that the light-shielding layer 109 may also have a region overlapping with portions of layers 107R, 107G, and 107B. The light-shielding layer 109 is provided so as to cover portions of pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B. The light-shielding layer 109 has regions overlapping with portions of pixel electrode 111R, pixel electrode 111G, and pixel electrode 111B. As shown in FIG. 2, the light-shielding layer 109 overlaps, for example, a region of the pixel electrode 111R that protrudes beyond the end of the layer 107R.

[0092] When light from outside the display device 100 (external light) or light emitted from a light-emitting device is incident on a transistor included in the layer 101, the electrical characteristics of the transistor may fluctuate. It is preferable that the amount of light incident on the transistor, particularly on the semiconductor layer of the transistor, is small. By providing the light-shielding layer 109 between the pixel electrodes, external light and light emitted from the light-emitting device can be prevented from entering the layer 101. This prevents light from entering the transistor, thereby preventing light-induced fluctuations in the electrical characteristics of the transistor. This allows for a highly reliable transistor and a highly reliable display device. Furthermore, since light is prevented from entering the layer 101, the generation of light reflected or scattered by wiring or the like included in the layer 101 (also referred to as stray light) can be suppressed. This allows for a display device with high contrast. Furthermore, a display device with high visibility can be obtained.

[0093] One of the indicators for evaluating the reliability of a transistor is a Gate Bias Temperature (GBT) stress test, in which the transistor is held in a state in which an electric field is applied to the gate. Among these, a test in which a positive potential (positive bias) is applied to the gate relative to the source potential and drain potential and the transistor is held at a high temperature is called a Positive Bias Temperature Stress (PBTS) test, and a test in which a negative potential (negative bias) is applied to the gate and the transistor is held at a high temperature is called a Negative Bias Temperature Stress (NBTS) test. The PBTS test and the NBTS test performed under light irradiation are called the PBTIS (Positive Bias Temperature Illumination Stress) test and the NBTIS (Negative Bias Temperature Illumination Stress) test, respectively. In particular, it is preferable that a transistor applied to a region where light can be incident has small fluctuations in electrical characteristics under light irradiation and high reliability against light. The reliability against light can be evaluated, for example, by the amount of fluctuation in threshold voltage in the NBTIS test.

[0094] The light-shielding layer 109 preferably has low light transmittance. Note that low light transmittance may be referred to as high light-shielding properties. The light-shielding layer 109 may be made of a material that does not easily transmit light. The light-shielding layer 109 may be made of one or more of a material with high light absorption, a material with high light reflectance, and a material with high light absorption and reflectance. The light-shielding layer 109 is preferably made of an insulating material. This can reduce leakage current between pixel electrodes.

[0095] The light-shielding layer 109 can be made of one or more of a material containing a pigment, a material containing a dye, a light-absorbing resin (e.g., a polyimide resin), and a resin that can be used for a color filter (hereinafter also referred to as a color filter material). Examples of pigments include carbon black. A colored resin, such as a red, brown, or black resin, can be suitably used for the light-shielding layer 109. Furthermore, it is preferable to use a resin in which two or more color filter materials are laminated or mixed, as this can enhance the light-shielding properties. In particular, a resin that is black or near-black can be obtained by mixing three or more color filter materials.

[0096] The light-shielding layer 109 preferably has low transmittance, particularly for light with a higher energy than the band gap of the semiconductor material of the semiconductor layer of the transistor provided in the layer 101, that is, for light with a short wavelength. This more effectively suppresses fluctuations in the electrical characteristics of the transistor, thereby enabling a display device with higher reliability.

[0097] The semiconductor material used for the semiconductor layer of the transistor provided in the layer 101 is not particularly limited. For example, a semiconductor made of an element or a compound semiconductor can be used. Examples of semiconductors made of an element include silicon and germanium. Examples of compound semiconductors include gallium arsenide and silicon germanium. Other examples of compound semiconductors include organic semiconductors, nitride semiconductors, and oxide semiconductors (OS: oxide semiconductor). Note that these semiconductor materials may contain impurities as dopants.

[0098] As a semiconductor material, for example, silicon can be used. Examples of silicon include single crystal silicon, polycrystalline silicon, microcrystalline silicon, and amorphous silicon. Examples of polycrystalline silicon include low temperature polysilicon (LTPS). A transistor using amorphous silicon in a channel formation region can be formed on a large glass substrate and manufactured at low cost. A transistor using polycrystalline silicon in a channel formation region has high field-effect mobility and can operate at high speed. Furthermore, a transistor using microcrystalline silicon in a channel formation region has higher field-effect mobility and can operate at high speed than a transistor using amorphous silicon.

[0099] The semiconductor material preferably includes a metal oxide (also referred to as an oxide semiconductor) that exhibits semiconductor properties. When a metal oxide is used for the semiconductor layer, the semiconductor layer can be referred to as a metal oxide layer. The band gap of the metal oxide used for the semiconductor layer is preferably 2.0 eV or more, more preferably 2.5 eV or more.

[0100] A transistor using an oxide semiconductor (hereinafter referred to as an OS transistor) has extremely high field-effect mobility compared to a transistor using amorphous silicon. Furthermore, an OS transistor has an extremely low off-state current and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0101] As described above, it is more preferable that the light-shielding layer 109 has a low transmittance for light with a short wavelength. For example, it is more preferable that the transmittance is low for the wavelength of light emitted from the blue light-emitting device 130B. In particular, the transmittance of the light-shielding layer 109 for light with a wavelength in the range of 300 nm to 550 nm is preferably 50% or less, more preferably 40% or less, even more preferably 20% or less, even more preferably 10% or less, and even more preferably 5% or less. By setting the transmittance of the light-shielding layer 109 within the above range, light is prevented from entering the transistor, resulting in a highly reliable transistor and a highly reliable display device. Furthermore, the generation of stray light can be suppressed, resulting in a display device with high contrast and high visibility. Note that the transmittance of the light-shielding layer 109 is not limited to the above range.

[0102] The light transmittance of the light-shielding layer 109 can be adjusted by the material used for the light-shielding layer 109 and the thickness of the light-shielding layer 109. FIG. 4A shows a cross-sectional view of the light-shielding layer 109 provided between the light-emitting device 130R and the light-emitting device 130G, and the vicinity thereof. If the thickness T109 of the light-shielding layer 109 between adjacent pixel electrodes 111 (pixel electrodes 111R and 111G in FIG. 4A ) is thin, the light transmittance increases, while if the thickness T109 is thick, the productivity of the display device may decrease. The thickness T109 can be the shortest distance between the surface on which the light-shielding layer 109 is formed (here, the top surface of the insulating layer 104 in the region where the light-shielding layer 109 and the insulating layer 104 contact each other) and the top surface of the light-shielding layer 109 in a cross-sectional view. The thickness T109 of the light-shielding layer 109 is preferably 200 nm or more and 2000 nm or less, more preferably 200 nm or more and 1500 nm or less, even more preferably 400 nm or more and 1500 nm or less, even more preferably 400 nm or more and 1200 nm or less, and even more preferably 600 nm or more and 1200 nm or less. By setting the thickness T109 within the above-mentioned range, it is possible to reduce the light transmittance and increase the productivity of the display device. Note that the thickness T109 is not limited to the above-mentioned range. For example, the thickness T109 can be reduced by using a material with low transmittance for the light-shielding layer 109.

[0103] 4A shows a configuration example in which the upper surface of the light-shielding layer 109 is flat, but one embodiment of the present invention is not limited to this. As shown in FIG. 4B, the upper surface of the light-shielding layer 109 can be formed into a concave curved shape. Alternatively, as shown in FIG. 4C, the upper surface of the light-shielding layer 109 can be formed into a convex curved shape. The upper surface of the light-shielding layer 109 preferably has a flat shape or a shape with a radius of curvature. This can improve the coverage of layers (e.g., layers 113R and 113G) provided on the light-shielding layer 109 and can prevent discontinuities in these layers.

[0104] 5A, 5B, and 5C, the insulating layer 104 may have a recess in the region where it contacts the light-shielding layer 109. The recess is filled with the light-shielding layer 109. This allows the thickness T109 to be increased, and the light-shielding properties of the light-shielding layer 109 to be improved.

[0105] Although multiple light-shielding layers 109 are shown in the cross-sectional views of Figure 1B and the like, when the display device 100 is viewed from above, the light-shielding layers 109 are connected together (see Figure 3D). In other words, the display device 100 can be configured to have one light-shielding layer 109. The display device 100 can also be configured to have multiple light-shielding layers 109 that are separated from one another.

[0106] The light-shielding layer 109 is provided on the insulating layer 104. Between the light-emitting device 130R and the light-emitting device 130G, the light-shielding layer 109 is located between the conductive layer 105R, the layer 107R, and the pixel electrode 111R and the conductive layer 105G, the layer 107G, and the pixel electrode 111G. The light-shielding layer 109 has regions in contact with the upper surface of the insulating layer 104, the side surfaces of the conductive layer 105R, the side surfaces of the pixel electrode 111R, the upper surface of a region of the pixel electrode 111R provided along the upper surface of the conductive layer 105R, the side surfaces of the conductive layer 105G, the side surfaces of the pixel electrode 111G, and the upper surface of a region of the pixel electrode 111G provided along the upper surface of the conductive layer 105G. The same applies between the other light-emitting devices.

[0107] In a cross-sectional view, it is more preferable that the height of the upper surface of the pixel electrode 111 in a region provided along the upper surface of the layer 107 is the same as or approximately the same as the height of the upper surface of the light-shielding layer 109. This improves the coverage of layers (e.g., layer 113R) provided on the pixel electrode 111 and the light-shielding layer 109. It is also preferable that the light-shielding layer 109 is not provided in a region provided along the upper surface of the layer 107 of the pixel electrode 111. That is, in a cross-sectional view, it is preferable that the height of the upper surface of the pixel electrode 111 is the same as or higher than the height of the upper surface of the light-shielding layer 109. In FIG. 2 , the height H111 from the surface on which the conductive layer 105R is formed (here, the upper surface of the insulating layer 104 in the region where the conductive layer 105R and the insulating layer 104 contact each other) to the upper surface of the pixel electrode 111R at the highest point is shown, and the height H109 from the upper surface of the light-shielding layer 109 at the highest point is shown. By making the height H111 higher than the height H109, ​​the light-shielding layer 109 is not provided in the region of the pixel electrode 111R that is provided along the upper surface of the layer 107R, and the contact area between the pixel electrode 111R and the layer 113R can be increased. The same applies to the pixel electrodes 111G and 111B. This increases the area of ​​the light-emitting region of the light-emitting device, resulting in a display device with a high aperture ratio. Note that the light-shielding layer 109 may also be configured to have a region that is located higher than the upper surface of the pixel electrode.

[0108] A layer 113R is provided on the pixel electrode 111R and the light-shielding layer 109. The layer 113R preferably has regions in contact with the upper surface of the pixel electrode 111R and the upper surface of the light-shielding layer 109. Furthermore, an end portion of the layer 113R preferably contacts the upper surface of the light-shielding layer 109. By providing the layer 113R not only on the pixel electrode 111R but also on the light-shielding layer 109, the area of ​​the layer 113R can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130R to be increased, resulting in a display device with a high aperture ratio.

[0109] A layer 113G is provided on the pixel electrode 111G and the light-shielding layer 109. The layer 113G preferably has regions in contact with the upper surface of the pixel electrode 111G and the upper surface of the light-shielding layer 109. Furthermore, an end portion of the layer 113G preferably contacts the upper surface of the light-shielding layer 109. By providing the layer 113G not only on the pixel electrode 111G but also on the light-shielding layer 109, the area of ​​the layer 113G can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130G to be increased, resulting in a display device with a high aperture ratio.

[0110] A layer 113B is provided on the pixel electrode 111B and the light-shielding layer 109. The layer 113B preferably has regions in contact with the upper surface of the pixel electrode 111B and the upper surface of the light-shielding layer 109. Furthermore, an end portion of the layer 113B preferably contacts the upper surface of the light-shielding layer 109. By providing the layer 113B not only on the pixel electrode 111B but also on the light-shielding layer 109, the area of ​​the layer 113B can be increased. This allows the area of ​​the light-emitting region of the light-emitting device 130B to be increased, resulting in a display device with a high aperture ratio.

[0111] Note that the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B may each have a tapered end portion, which may improve the coverage of a layer (e.g., the light-shielding layer 109) provided in contact with the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B, and may prevent voids from forming in the light-shielding layer 109 and reducing the light-shielding ability.

[0112] The conductivity of the layers 107R, 107G, and 107B is not particularly limited, and they can be, for example, insulating layers, semiconductor layers, or conductive layers. The layers 107R, 107G, and 107B can be made of one or more of an inorganic material and an organic material.

[0113] The layers 107R, 107G, and 107B can be made of an organic material. A photosensitive resin is preferably used as the organic material, and for example, a photosensitive resin composition containing an acrylic resin is preferably used. Note that in this specification, the term "acrylic resin" does not refer only to polymethacrylic acid ester or methacrylic resin, but may refer to all acrylic polymers in a broad sense.

[0114] Layers 107R, 107G, and 107B may be made of acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, or precursors of these resins. Layers 107R, 107G, and 107B may be made of organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin. Photoresist may also be used as the photosensitive resin. Positive or negative materials may be used as the photosensitive resin.

[0115] The layers 107R, 107G, and 107B can be formed, for example, in the same process.

[0116] As described above, the thickness of the light-shielding layer 109 is preferably thick, and the height of the upper surface of the pixel electrode 111 is preferably higher than that of the light-shielding layer 109. Here, if the layer 107 is not provided and the height of the upper surface of the pixel electrode 111 is made higher than that of the light-shielding layer 109, it is necessary to increase the thickness of one or both of the pixel electrode 111 and the conductive layer 105. However, for example, increasing the thickness of the pixel electrode 111 increases the stress of the pixel electrode 111 or the conductive film that will become the pixel electrode 111, which reduces adhesion to the surface on which it is formed and may cause peeling of the pixel electrode 111 or the conductive film. Furthermore, processing the conductive film into the pixel electrode 111 may become difficult. Furthermore, as the crystallinity of the conductive film increases, the surface irregularities of the conductive film increase, which may reduce the coverage of a layer (e.g., layer 113R) provided on the pixel electrode 111. The same applies to increasing the thickness of the conductive layer 105. By providing the layer 107 between the pixel electrode 111 and the conductive layer 105, the thicknesses of the pixel electrode 111 and the conductive layer 105 can be reduced, and the occurrence of the above-mentioned problems can be suppressed.

[0117] The conductive layer 250R has a region in contact with a plug 256R embedded in the insulating layer 104, and the conductive layer 250R and the plug 256R are electrically connected. Also, the conductive layer 105R has a region in contact with the plug 256R, and the conductive layer 105R and the plug 256R are electrically connected. In other words, the conductive layer 250R is electrically connected to the pixel electrode 111R via the plug 256R and the conductive layer 105R.

[0118] The conductive layer 250G has a region in contact with a plug 256G embedded in the insulating layer 104, and the conductive layer 250G and the plug 256G are electrically connected. Also, the conductive layer 105G has a region in contact with the plug 256G, and the conductive layer 105G and the plug 256G are electrically connected. In other words, the conductive layer 250G is electrically connected to the pixel electrode 111G via the plug 256G and the conductive layer 105G.

[0119] The conductive layer 250B has a region in contact with a plug 256B embedded in the insulating layer 104, and the conductive layer 250B and the plug 256B are electrically connected. Also, the conductive layer 105B has a region in contact with the plug 256B, and the conductive layer 105B and the plug 256B are electrically connected. In other words, the conductive layer 250B is electrically connected to the pixel electrode 111B via the plug 256B and the conductive layer 105B.

[0120] An insulating layer 125 and an insulating layer 127 on the insulating layer 125 are provided in the region between adjacent light-emitting devices. In the cross-sectional views such as FIG. 1B , a plurality of insulating layers 125 and insulating layers 127 are shown, but when the display device 100 is viewed from above, the insulating layers 125 and 127 are each connected to one another. In other words, the display device 100 can be configured to have one insulating layer 125 and one insulating layer 127. Note that the display device 100 can be configured to have a plurality of insulating layers 125 that are separated from one another, and a plurality of insulating layers 127 that are separated from one another.

[0121] A display device according to one embodiment of the present invention can be a top-emission type that emits light in a direction opposite to a substrate on which a light-emitting device is formed, a bottom-emission type that emits light toward a substrate on which a light-emitting device is formed, or a dual-emission type that emits light to both sides.

[0122] Light emitting device 130R emits red (R) light, light emitting device 130G emits green (G) light, and light emitting device 130B emits blue (B) light.

[0123] As the light-emitting device, for example, an OLED (organic light-emitting diode) or a QLED (quantum-dot light-emitting diode) is preferably used. Examples of the light-emitting material contained in the light-emitting device include a fluorescent material (fluorescent material), a phosphorescent material (phosphorescent material), a material exhibiting thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material), and an inorganic compound (quantum dot material, etc.). Furthermore, an LED such as a micro LED (light-emitting diode) can also be used as the light-emitting device.

[0124] The light emitting device can emit light of infrared, red, green, blue, cyan, magenta, yellow, white, etc. The color purity can be improved by providing the light emitting device with a microcavity structure.

[0125] In FIG. 1B , an insulating layer (also referred to as a partition wall, bank, or spacer) covering the upper end of the pixel electrode 111R is not provided between the pixel electrode 111R and the layer 113R. Furthermore, an insulating layer covering the upper end of the pixel electrode 111G is not provided between the pixel electrode 111G and the layer 113G. This allows the distance between adjacent light-emitting devices to be extremely narrow. This allows for a high-definition or high-resolution display device. Furthermore, a mask for forming the insulating layer is not required, thereby reducing the manufacturing cost of the display device.

[0126] By using a structure in which an insulating layer covering an edge of the pixel electrode is not provided between the pixel electrode and the EL layer, in other words, by using a structure in which an insulating layer is not provided between the pixel electrode and the EL layer, light from the EL layer can be efficiently extracted. Furthermore, the display device of one embodiment of the present invention can have extremely low viewing angle dependence. By reducing the viewing angle dependence, the visibility of images in the display device can be improved. For example, in the display device of one embodiment of the present invention, the viewing angle (the maximum angle at which a certain contrast ratio is maintained when the screen is viewed from an oblique direction) can be set to a range of 100° to less than 180°, preferably 150° to 170°. The above viewing angle can be applied to both the vertical and horizontal directions.

[0127] The light-emitting device of this embodiment can have a single structure (a structure having only one light-emitting unit) or a tandem structure (a structure having a plurality of light-emitting units). The light-emitting unit has at least one light-emitting layer.

[0128] Layer 113R, layer 113G, and layer 113B each include at least a light-emitting layer. Layer 113R includes a light-emitting layer that emits red light, layer 113G includes a light-emitting layer that emits green light, and layer 113B includes a light-emitting layer that emits blue light. In other words, layer 113R includes a light-emitting material that emits red light, layer 113G includes a light-emitting material that emits green light, and layer 113B includes a light-emitting material that emits blue light.

[0129] When a light-emitting device having a tandem structure is used, it is preferable that layer 113R has a structure having a plurality of light-emitting units that emit red light, layer 113G has a structure having a plurality of light-emitting units that emit green light, and layer 113B has a structure having a plurality of light-emitting units that emit blue light. It is preferable to provide a charge generation layer between the light-emitting units of each light-emitting device.

[0130] Layer 113R, layer 113G, and layer 113B may each include one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer.

[0131] For example, each of the layers 113R, 113G, and 113B may have a hole injection layer, a hole transport layer, a light-emitting layer, and an electron transport layer in this order. Alternatively, the layer 113R may have an electron blocking layer between the hole transport layer and the light-emitting layer. Alternatively, the layer 113G may have a hole blocking layer between the electron transport layer and the light-emitting layer. Alternatively, the layer 113B may have an electron injection layer on the electron transport layer.

[0132] For example, each of the layers 113R, 113G, and 113B may have an electron injection layer, an electron transport layer, an emitting layer, and a hole transport layer in this order. Alternatively, a hole blocking layer may be provided between the electron transport layer and the emitting layer. Alternatively, an electron blocking layer may be provided between the hole transport layer and the emitting layer. Alternatively, a hole injection layer may be provided on the hole transport layer.

[0133] As described above, the layers 113R, 113G, and 113B each preferably have a light-emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the light-emitting layer. Alternatively, the layers 113R, 113G, and 113B each preferably have a light-emitting layer and a carrier block layer (hole block layer or electron block layer) on the light-emitting layer. Alternatively, the layers 113R, 113G, and 113B each preferably have a light-emitting layer, a carrier block layer on the light-emitting layer, and a carrier transport layer on the carrier block layer. If the surfaces of the layers 113R, 113G, and 113B are exposed to the atmosphere during the manufacturing process of the display device, providing one or both of the carrier transport layer and the carrier block layer on the light-emitting layer prevents the light-emitting layer from being exposed to the outermost surface, thereby preventing the light-emitting layer from being exposed to the atmosphere. This reduces damage to the light-emitting layer and improves the reliability of the light-emitting device.

[0134] The heat resistance temperature of the compounds contained in the layers 113R, 113G, and 113B is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. For example, the glass transition point (Tg) of these compounds is preferably 100° C. or higher and 180° C. or lower, more preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower.

[0135] In particular, it is preferable that the functional layer provided on the light-emitting layer has a high heat resistance temperature. Furthermore, it is even more preferable that the functional layer provided on and in contact with the light-emitting layer has a high heat resistance temperature. The high heat resistance of the functional layer makes it possible to effectively protect the light-emitting layer and reduce damage to the light-emitting layer.

[0136] It is preferable that the light-emitting layer has a high heat resistance temperature, which can prevent the light-emitting layer from being damaged by heat, resulting in a decrease in light-emitting efficiency and a shortened lifespan.

[0137] The light-emitting layer contains a light-emitting substance (also referred to as a light-emitting material, a light-emitting compound, a guest material, or the like) and an organic compound (also referred to as a host material, or the like). Since the light-emitting layer contains a larger amount of the organic compound than the light-emitting substance, the glass transition point (Tg) of the organic compound can be used as an index of the heat resistance temperature of the light-emitting layer.

[0138] Layer 113R, layer 113G, and layer 113B may each include, for example, a first light-emitting unit, a charge generation layer on the first light-emitting unit, and a second light-emitting unit on the charge generation layer.

[0139] The second light-emitting unit preferably has an emitting layer and a carrier transport layer (electron transport layer or hole transport layer) on the emitting layer. Alternatively, the second light-emitting unit preferably has an emitting layer and a carrier block layer (hole block layer or electron block layer) on the emitting layer. Alternatively, the second light-emitting unit preferably has an emitting layer, a carrier block layer on the emitting layer, and a carrier transport layer on the carrier block layer. If the surface of the second light-emitting unit is exposed to the atmosphere during the manufacturing process of the display device, providing one or both of the carrier transport layer and the carrier block layer on the emitting layer prevents the emitting layer from being exposed on the outermost surface, thereby preventing the emitting layer from being exposed to the atmosphere. This reduces damage to the emitting layer and improves the reliability of the light-emitting device. Note that when three or more emitting units are included, the uppermost emitting unit preferably has an emitting layer and one or both of the carrier transport layer and the carrier block layer on the emitting layer.

[0140] The common layer 114 may include, for example, an electron injection layer or a hole injection layer. Alternatively, the common layer 114 may include a stack of an electron transport layer and an electron injection layer, or a stack of a hole transport layer and a hole injection layer. The common layer 114 is shared by the light-emitting devices 130R, 130G, and 130B.

[0141] 6A and 6B are cross-sectional views taken along dashed line Y1-Y2 in FIG. 1A. FIGS. 6A and 6B show the connection portion 140 and its vicinity. The common electrode 115 is shared by the light-emitting devices 130R, 130G, and 130B. The common electrode 115 shared by the plurality of light-emitting devices is electrically connected to a conductive layer 123 provided in the connection portion 140. The conductive layer 123 can be formed, for example, in the same process as the pixel electrodes 111R, 111G, and 111B.

[0142] A conductive layer 105p is provided on the insulating layer 104. The conductive layer 105p can be formed, for example, in the same process as the conductive layers 105R, 105G, and 105B. A conductive layer 123 is provided on the conductive layer 105p. A layer 107p is provided between the conductive layer 105p and the conductive layer 123. The layer 107p can be formed, for example, in the same process as the layers 107R, 107G, and 107B. The conductive layer 123 is provided so as to cover the conductive layer 105p and the layer 107p, and has a region in contact with the conductive layer 105p.

[0143] Note that a configuration may be adopted in which the light-shielding layer 109 is not provided in a portion overlapping with a region where no transistor is provided. For example, if no transistor is provided in a region overlapping with the connection portion 140 of the layer 101 or in the vicinity thereof, a configuration may be adopted in which the light-shielding layer 109 is not provided in the connection portion 140 or in the vicinity thereof. Fig. 6A shows a configuration in which the light-shielding layer 109 is provided in the display portion (the left portion of Fig. 6A ) and the light-shielding layer 109 is not provided in the connection portion 140 or in the vicinity thereof (the right portion of Fig. 6A ).

[0144] The connection portion 140 preferably has an area where the conductive layer 105p, the conductive layer 123, the common layer 114, and the common electrode 115 overlap in this order without any other layers (e.g., layer 107p) in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0145] The conductive layer 105p has a region in contact with a plug 256p embedded in the insulating layer 104, and is electrically connected to the plug 256p. The plug 256p is in contact with a conductive layer 250p included in the layer 101, and is electrically connected to the conductive layer 250p. That is, the conductive layer 250p is electrically connected to the conductive layer 123 via the plug 256p and the conductive layer 105p. The conductive layer 250p corresponds to, for example, a wiring included in the layer 101. Note that a configuration in which the plug 256p and the conductive layer 250p are not provided may also be adopted.

[0146] 6A shows an example in which a common layer 114 is provided on a conductive layer 123, and the conductive layer 123 and the common electrode 115 are electrically connected through the common layer 114. Note that the connection portion 140 may also be configured without the common layer 114. In FIG. 6B, the conductive layer 123 and the common electrode 115 are in contact with each other and directly connected. The connection portion 140 preferably has an overlapping region in this order of the conductive layer 105p, the conductive layer 123, and the common electrode 115, without any other layer (e.g., layer 107p) between them. For example, by using a mask for defining a deposition area (also referred to as an area mask or a rough metal mask, to distinguish it from a fine metal mask), the regions in which the common layer 114 and the common electrode 115 are deposited can be varied.

[0147] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0148] The island-shaped layers 113R, 113G, and 113B can be formed by photolithography, for example, without using a fine metal mask. A film to become the layer 113R is formed, and the film is processed by photolithography to form the island-shaped layer 113R. The same applies to the layers 113G and 113B. This allows the layers 113R, 113G, and 113B to be formed in fine sizes, resulting in a high-resolution display device. The display device of one embodiment of the present invention can have a resolution of, for example, 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0149] When using a fine metal mask, it is difficult to reduce the spacing between adjacent light-emitting devices to less than 10 μm. However, by using photolithography, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be reduced to, for example, less than 10 μm, 5 μm or less, 3 μm or less, 2 μm or less, 1.5 μm or less, 1 μm or less, or 0.5 μm or less in processes on glass substrates. Furthermore, by using an exposure device for LSIs, the spacing between adjacent light-emitting devices, adjacent EL layers, or adjacent pixel electrodes can be reduced to, for example, 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less in processes on Si wafers. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting devices, enabling the aperture ratio to approach 100%. For example, in a display device of one embodiment of the present invention, the aperture ratio can be 40% or more, 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.

[0150] Increasing the aperture ratio of a display device can improve the reliability of the display device. More specifically, when the lifetime of a display device using an organic EL device and having an aperture ratio of 10% is taken as the reference, the lifetime of a display device having an aperture ratio of 20% (i.e., an aperture ratio twice that of the reference) is approximately 3.25 times longer, and the lifetime of a display device having an aperture ratio of 40% (i.e., an aperture ratio four times that of the reference) is approximately 10.6 times longer. As such, as the aperture ratio increases, the current density flowing through the organic EL device required to obtain the same display can be reduced, thereby improving the lifetime of the display device. In the display device of one embodiment of the present invention, the aperture ratio can be increased, thereby improving the display quality of the display device. Furthermore, as the aperture ratio of the display device increases, an excellent effect is achieved, such as a significant improvement in the reliability (particularly the lifetime) of the display device.

[0151] In FIG. 1B , a mask layer 118R is located over the layer 113R included in the light-emitting device 130R, a mask layer 118G is located over the layer 113G included in the light-emitting device 130G, and a mask layer 118B is located over the layer 113B included in the light-emitting device 130B. The mask layer 118B is a mask layer that was provided in contact with the upper surface of the layer 113B when processing the layer 113B, and a mask layer 118B is a mask layer that was provided in contact with the upper surface of the layer 113B when processing the layer 113B. Similarly, the mask layer 118G is a mask layer that was provided during the formation of the layer 113G, and the mask layer 118R is a mask layer that was provided during the formation of the layer 113R, and a ... display device of one embodiment of the present invention. The same material can be used for any two or all of the mask layers 118R, 118G, and 118B, or different materials can be used. In the following, the mask layer 118R, the mask layer 118G, and the mask layer 118B may be collectively referred to as the mask layer 118.

[0152] In this specification and the like, different materials refer to materials in which some or all of the constituent elements are different, or materials in which the constituent elements are the same but the composition is different.

[0153] One end of the mask layer 118R (the end opposite the light-emitting region, the outer end) is aligned or approximately aligned with the end of the layer 113R, and the other end of the mask layer 118R is located on the layer 113R. Here, the other end of the mask layer 118R (the end on the light-emitting region side, the inner end) preferably overlaps the region where the layer 113R and the pixel electrode 111R contact. In this case, the other end of the mask layer 118R is easily formed on a substantially flat surface of the layer 113R. The same applies to the mask layers 118G and 118B. Furthermore, the mask layer 118 remains, for example, between the top surface of the island-shaped EL layer (layer 113R, layer 113G, or layer 113B) and the insulating layer 125. The mask layer will be described in detail in Embodiment 2.

[0154] The side surfaces of the layers 113R, 113G, and 113B are covered with the insulating layer 125. The insulating layer 127 overlaps the side surfaces of the layers 113R, 113G, and 113B with the insulating layer 125 interposed therebetween.

[0155] By covering part of the top surface and the side surfaces of the layers 113R, 113G, and 113B with at least one of the insulating layer 125, the insulating layer 127, and the mask layer 118, the common layer 114 (or the common electrode 115) is prevented from contacting the side surfaces of the layers 113R, 113G, and 113B, thereby preventing short circuits in the light-emitting device, thereby improving the reliability of the light-emitting device.

[0156] The EL layer preferably has a first region, which is a light-emitting region (also referred to as a light-emitting area), and a second region located outside the first region. The second region can also be referred to as a dummy region or a dummy area. The first region is located between the pixel electrode and the common electrode. The first region is covered with a mask layer during the manufacturing process of the display device and is therefore minimally damaged. Therefore, a light-emitting device with high light-emitting efficiency and a long lifetime can be realized. On the other hand, the second region includes the edge of the EL layer and its vicinity, and may be damaged by exposure to plasma during the manufacturing process of the display device. By not using the second region as a light-emitting region, variation in the characteristics of the light-emitting device can be suppressed. For example, by providing the EL layer also on the light-shielding layer 109, the portion in contact with the light-shielding layer 109 is included in the second region. This suppresses variation in the characteristics of the light-emitting device.

[0157] Although the structure in which the island-shaped layers 113R, 113G, and 113B are formed by photolithography is shown here, one embodiment of the present invention is not limited to this. For example, the island-shaped layers 113R, 113G, and 113B can also be formed by using a fine metal mask.

[0158] 1B, the layers 113R, 113G, and 113B are all shown with the same thickness, but this is not a limitation of one embodiment of the present invention. The layers 113R, 113G, and 113B may have different thicknesses. For example, it is preferable to set the thickness so that the optical path length increases the intensity of light emitted from the layers 113R, 113G, and 113B. This allows a microcavity structure to be realized, and the color purity of each light-emitting device to be improved.

[0159] The insulating layer 125 preferably contacts the side surfaces of the layers 113R, 113G, and 113B (see the end of the layer 113R and the area therearound surrounded by a dashed line in FIG. 2). The insulating layer 125 contacting the layers 113R, 113G, and 113B can prevent the layers 113R, 113G, and 113B from peeling off. The insulating layer 125 is in close contact with the layers 113B, 113G, or 113R, which provides an effect of fixing or bonding the adjacent layers 113B and the like by the insulating layer 125. This can improve the reliability of the light-emitting device. Furthermore, the manufacturing yield of the light-emitting device can be increased.

[0160] 1B , the insulating layers 125 and 127 cover part of the top surfaces and both the side surfaces of the layers 113R, 113G, and 113B, which can further prevent peeling of the EL layer and improve the reliability of the light-emitting device and the manufacturing yield of the light-emitting device.

[0161] The insulating layer 127 is provided on the insulating layer 125 so as to fill a recessed portion of the insulating layer 125. The insulating layer 127 can be configured to overlap with a portion of the top surface and side surfaces of the layer 113R, the layer 113G, and the layer 113B via the insulating layer 125. The insulating layer 127 preferably covers at least a portion of the side surface of the insulating layer 125.

[0162] By providing the insulating layers 125 and 127, the gaps between adjacent island-shaped layers can be filled, which reduces large unevenness in height on the surface on which layers (e.g., a carrier injection layer, a common electrode, etc.) are formed on the island-shaped layers, thereby making the surface flatter, thereby improving the coverage of the carrier injection layer, the common electrode, etc.

[0163] The common layer 114 and the common electrode 115 are provided over the layer 113R, the layer 113G, the layer 113B, the mask layer 118, the insulating layer 125, and the insulating layer 127. Before the insulating layer 125 and the insulating layer 127 are provided, a step is generated between a region where the pixel electrode and the island-shaped EL layer are provided and a region where the pixel electrode and the island-shaped EL layer are not provided (a region between light-emitting devices). The display device of one embodiment of the present invention includes the insulating layer 125 and the insulating layer 127, which can flatten the step and improve the coverage of the common layer 114 and the common electrode 115. Therefore, poor connection due to disconnection can be suppressed. Furthermore, the step can suppress an increase in electrical resistance due to a local thinning of the common electrode 115.

[0164] The upper surface of the insulating layer 127 preferably has a highly flat shape, but may have a convex portion, a convex curved surface, a concave curved surface, or a concave portion. For example, the upper surface of the insulating layer 127 preferably has a highly flat convex curved surface with a large radius of curvature.

[0165] Next, examples of materials for the insulating layer 125 and the insulating layer 127 will be described.

[0166] The insulating layer 125 can be an insulating layer containing an inorganic material. For example, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used for the insulating layer 125. The insulating layer 125 can have a single-layer structure or a stacked-layer structure. Examples of oxide insulating films include a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. Examples of nitride insulating films include a silicon nitride film and an aluminum nitride film. Examples of oxynitride insulating films include a silicon oxynitride film and an aluminum oxynitride film. Examples of nitride oxide insulating films include a silicon nitride oxide film and an aluminum nitride oxide film. In particular, aluminum oxide is preferable because it has a high etching selectivity with respect to the EL layer and has a function of protecting the EL layer in the formation of the insulating layer 127 described later. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, or a silicon oxide film formed by atomic layer deposition (ALD) as the insulating layer 125, it is possible to form an insulating layer 125 that has few pinholes and has an excellent function of protecting the EL layer. The insulating layer 125 may also have a stacked structure of a film formed by ALD and a film formed by sputtering. For example, the insulating layer 125 may have a stacked structure of an aluminum oxide film formed by ALD and a silicon nitride film formed by sputtering.

[0167] The insulating layer 125 preferably functions as a barrier insulating layer against at least one of water and oxygen. The insulating layer 125 preferably has a function of suppressing diffusion of at least one of water and oxygen. The insulating layer 125 preferably has a function of capturing or fixing (also referred to as gettering) at least one of water and oxygen.

[0168] In this specification and the like, a barrier insulating layer refers to an insulating layer having barrier properties. Furthermore, in this specification and the like, the barrier properties refer to a function of making it difficult for a target substance to diffuse, thereby suppressing the permeation of the substance through the film (also referred to as low permeability), or a function of capturing or fixing (also referred to as gettering) the target substance.

[0169] The insulating layer 125 has a function as a barrier insulating layer or a gettering function, which makes it possible to suppress the intrusion of impurities (typically, at least one of water and oxygen) that may diffuse into each light-emitting device from the outside. With this configuration, it is possible to provide a highly reliable light-emitting device and further a highly reliable display device.

[0170] The insulating layer 125 preferably has a low impurity concentration. This can prevent impurities from entering the EL layer from the insulating layer 125 and causing deterioration of the EL layer. Furthermore, by reducing the impurity concentration in the insulating layer 125, the barrier properties against at least one of water and oxygen can be improved. For example, it is desirable that the insulating layer 125 has a sufficiently low hydrogen concentration or a sufficiently low carbon concentration, or preferably both of them.

[0171] The same material can be used for insulating layer 125 and mask layers 118B, 118G, and 118R. In this case, the boundary between insulating layer 125 and any of mask layers 118B, 118G, and 118R may become unclear and indistinguishable. Therefore, any of mask layers 118B, 118G, and 118R and insulating layer 125 may be recognized as a single layer. In other words, one layer may be provided in contact with a portion of the top surface and side surfaces of layers 113R, 113G, and 113B, and insulating layer 127 may be observed to cover at least a portion of the side surfaces of the single layer.

[0172] The insulating layer 127 provided on the insulating layer 125 has the function of flattening large unevenness of the insulating layer 125 formed between adjacent light-emitting devices. In other words, the insulating layer 127 has the effect of improving the flatness of the surface on which the common electrode 115 is formed.

[0173] An insulating layer containing an organic material can be suitably used as the insulating layer 127. A photosensitive resin, for example, a photosensitive resin composition containing an acrylic resin, can be preferably used as the organic material. The insulating layer 127 can be made of any of the materials listed for the layers 107R, 107G, and 107B.

[0174] The insulating layer 127 can also be made of a material that absorbs visible light. By having the insulating layer 127 absorb light emitted from the light-emitting device, it is possible to prevent light from leaking from the light-emitting device to an adjacent light-emitting device through the insulating layer 127. This can improve the display quality of the display device. Furthermore, since the display quality can be improved without using a polarizing plate in the display device, it is possible to reduce the weight and thickness of the display device. The insulating layer 127 can also be made of a material that can be used for the light-shielding layer 109.

[0175] A mask layer 118R is provided in contact with a portion of the upper surface of layer 113R, a mask layer 118G is provided in contact with a portion of the upper surface of layer 113G, and a mask layer 118B is provided in contact with a portion of the upper surface of layer 113B. An insulating layer 125 is provided in contact with the upper and side surfaces of mask layer 118R, mask layer 118G, mask layer 118B, and the upper surface of light-shielding layer 109. An insulating layer 127 is provided in contact with the upper and side surfaces of insulating layer 125. Furthermore, insulating layer 127 overlaps, via insulating layer 125, with a portion of the upper surface and side surfaces of layer 113R, a portion of the upper surface and side surfaces of layer 113G, and a portion of the upper surface and side surfaces of layer 113B. A common layer 114 is provided covering the layer 113R, the mask layer 118R, the layer 113G, the mask layer 118G, the layer 113B, the mask layer 118B, the insulating layer 125, and the insulating layer 127, and a common electrode 115 is provided on the common layer 114.

[0176] The insulating layer 127 is formed in a region between two island-shaped EL layers (for example, a region between the layer 113R and the layer 113G). At this time, at least a portion of the insulating layer 127 is located between adjacent EL layers. The provision of the insulating layer 127 improves coverage of the island-shaped EL layers and the common layer 114 and common electrode 115 formed on the insulating layer 127, thereby preventing these layers from being separated and from having locally thin portions.

[0177] In a cross-sectional view, the upper surface of the insulating layer 127 preferably has a convex curved shape. The convex curved shape of the upper surface of the insulating layer 127 preferably has a shape that bulges gently toward the center. Furthermore, it is preferable that the convex curved portion in the center of the upper surface of the insulating layer 127 has a shape that is continuously connected toward the edge. By forming the insulating layer 127 in this shape, the common layer 114 and the common electrode 115 can be formed with high coverage over the entire insulating layer 127.

[0178] By providing the insulating layers 127 and 125, the common layer 114 and the common electrode 115 can be formed with high coverage. Furthermore, it is possible to prevent the common layer 114 and the common electrode 115 from being divided and from being locally thin. Therefore, it is possible to prevent poor connection between the light-emitting devices in the common layer 114 and the common electrode 115 due to the divided portions and an increase in electrical resistance due to the locally thin portions. This allows the display device according to one embodiment of the present invention to have improved display quality.

[0179] It is preferable to provide a protective layer 131 on the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B. The reliability of the light emitting device can be improved by providing the protective layer 131. The protective layer 131 can have a single layer structure or a multilayer structure.

[0180] There is no limitation on the conductivity of the protective layer 131. The protective layer 131 can be formed using at least one of an insulating film, a semiconductor film, and a conductive film.

[0181] The protective layer 131 has an inorganic film, which prevents the common electrode 115 from being oxidized, suppresses impurities (moisture, oxygen, etc.) from entering the light-emitting device, and suppresses deterioration of the light-emitting device, thereby improving the reliability of the display device.

[0182] For the protective layer 131, for example, an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film can be used. Specific examples of these inorganic insulating films are as given in the description of the insulating layer 125. In particular, the protective layer 131 preferably has an insulating nitride film or an insulating nitride oxide film, and more preferably has an insulating nitride film.

[0183] The protective layer 131 may be formed using an inorganic film containing In—Sn oxide (ITO), In—Zn oxide, Ga—Zn oxide, Al—Zn oxide, indium gallium zinc oxide (In—Ga—Zn oxide, also referred to as IGZO), or the like. The inorganic film preferably has high resistance, specifically, preferably has higher resistance than the common electrode 115. The inorganic film may further contain nitrogen.

[0184] When light emitted from the light-emitting device is extracted through the protective layer 131, it is preferable that the protective layer 131 has high transparency to visible light. For example, ITO, IGZO, and aluminum oxide are preferable because they are inorganic materials that have high transparency to visible light.

[0185] For example, a stacked structure of an aluminum oxide film and a silicon nitride film on the aluminum oxide film, or a stacked structure of an aluminum oxide film and an IGZO film on the aluminum oxide film can be used as the protective layer 131. By using such a stacked structure, impurities (water, oxygen, etc.) can be prevented from entering the EL layer side.

[0186] Furthermore, the protective layer 131 may have an organic film. For example, the protective layer 131 may have both an organic film and an inorganic film. Examples of organic materials that can be used for the protective layer 131 include the organic insulating materials that can be used for the insulating layer 127.

[0187] The protective layer 131 may have a two-layer structure formed by using different film formation methods. Specifically, the first layer of the protective layer 131 may be formed by the ALD method, and the second layer of the protective layer 131 may be formed by the sputtering method.

[0188] A light-shielding layer may be provided on the surface of the substrate 120 facing the resin layer 122. Various optical members may be disposed on the outside of the substrate 120. Examples of optical members include a polarizing plate, a retardation plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-collecting film. Furthermore, a surface protection layer such as an anti-static film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, a hard coat film that suppresses the occurrence of scratches during use, or an impact absorbing layer may be disposed on the outside of the substrate 120. For example, a glass layer or a silica layer (SiO ｘ The surface protection layer can be preferably formed of a material such as DLC (diamond-like carbon), aluminum oxide (AlO ｘ ), polyester-based materials, or polycarbonate-based materials may also be used. Note that it is preferable to use a material with high transmittance to visible light for the surface protection layer. It is also preferable to use a material with high hardness for the surface protection layer.

[0189] The substrate 120 can be made of glass, quartz, ceramics, sapphire, resin, metal, alloy, semiconductor, or the like. A material that transmits light is used for the substrate on the side from which light from the light-emitting device is extracted. Using a flexible material for the substrate 120 can increase the flexibility of the display device and realize a flexible display. A polarizing plate may also be used as the substrate 120.

[0190] The substrate 120 can be made of polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc. The substrate 120 can also be made of glass having a thickness sufficient to provide flexibility.

[0191] When a circularly polarizing plate is superimposed on a display device, it is preferable that the display device has a substrate with high optical isotropy. A substrate with high optical isotropy has small birefringence (or a small amount of birefringence).

[0192] The absolute value of the retardation (phase difference) of a substrate having high optical isotropy is preferably 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less.

[0193] Examples of films with high optical isotropy include triacetyl cellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0194] When a film is used as a substrate, the film may absorb water, which may cause changes in shape, such as wrinkles, in the display device. Therefore, it is preferable to use a film with low water absorption as the substrate. For example, it is preferable to use a film with a water absorption rate of 1% or less, more preferably 0.1% or less, and even more preferably 0.01% or less.

[0195] The resin layer 122 can be made of various curable adhesives, such as a photo-curable adhesive (e.g., an ultraviolet-curable adhesive), a reactive curable adhesive, a thermosetting adhesive, or an anaerobic adhesive. Examples of such adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. Materials with low moisture permeability, such as epoxy resin, are particularly preferred. Two-component resins may also be used. Adhesive sheets or the like may also be used.

[0196] [Structure Example 2] A modification of Fig. 1B is shown in Fig. 7A. Fig. 1A can be referred to for a top view of the display device. Fig. 7A shows a structure in which the display device includes a conductive layer 137R, a conductive layer 137G, and a conductive layer 137B.

[0197] The light-emitting device 130R has a conductive layer 137R between the pixel electrode 111R and the layer 113R. An enlarged view of the light-emitting device 130R and its vicinity is shown in Figure 7B. The light-emitting device 130R has a pixel electrode 111R, a conductive layer 137R on the pixel electrode 111R, an island-shaped layer 113R on the conductive layer 137R, a common layer 114 on the layer 113R, and a common electrode 115 on the common layer 114.

[0198] The light-emitting device 130G has a conductive layer 137G between the pixel electrode 111G and the layer 113G. The light-emitting device 130G has the pixel electrode 111G, a conductive layer 137G on the pixel electrode 111G, an island-shaped layer 113G on the conductive layer 137G, a common layer 114 on the layer 113G, and a common electrode 115 on the common layer 114.

[0199] The light-emitting device 130B has a conductive layer 137B between the pixel electrode 111B and the layer 113B. The light-emitting device 130B has the pixel electrode 111B, a conductive layer 137B on the pixel electrode 111B, an island-shaped layer 113B on the conductive layer 137B, a common layer 114 on the layer 113B, and a common electrode 115 on the common layer 114.

[0200] The conductive layers 137R, 137G, and 137B may be formed in the same process, for example. Note that hereinafter, the conductive layers 137R, 137G, and 137B may be collectively referred to as the conductive layer 137.

[0201] Each of the conductive layers 137R, 137G, and 137B preferably has a region in contact with the upper surface of the light-shielding layer 109. An end of the conductive layer 137R, an end of the conductive layer 137G, and an end of the conductive layer 137B preferably contact the upper surface of the light-shielding layer 109.

[0202] The insulating layer 125 has regions in contact with the side surfaces of the conductive layer 137R, the side surfaces of the conductive layer 137G, the side surfaces of the conductive layer 137B, the side surfaces of the layer 113R, the side surfaces of the layer 113G, the side surfaces of the layer 113B, the side surfaces and top surfaces of the mask layer 118R, the side surfaces and top surfaces of the mask layer 118G, the side surfaces and top surfaces of the mask layer 118B, and the top surface of the light-shielding layer 109.

[0203] The conductive films that will become the conductive layers 137R, 137G, and 137B function as etching stoppers when forming the layers 113R, 113G, and 113B, and the mask layers 118R, 118G, and 118B. The conductive films that will become the conductive layers 137R, 137G, and 137B may be referred to as first etching stoppers. For example, the first etching stoppers are formed on the light-shielding layer 109, the pixel electrodes 111R, 111G, and 111B. A film that will become the layer 113R and a mask film that will become the mask layer 118R are formed on the first etching stoppers, and the film and the mask film are processed using photolithography to form the layer 113R and the mask layer 118R. When the layer 113R and the mask layer 118R are formed, the light-shielding layer 109 is covered with the first etching stopper, so that the light-shielding layer 109 is etched, and the thickness of the light-shielding layer 109 is prevented from becoming thin. This improves the light-shielding properties of the light-shielding layer 109. Similarly, when the layer 113G and the mask layer 118G are formed, and when the layer 113B and the mask layer 118B are formed, the first etching stopper prevents the thickness of the light-shielding layer 109 from becoming thin.

[0204] After forming the layer 113R, the mask layer 118R, the layer 113G, the mask layer 118G, the layer 113B, and the mask layer 118B, a first etching stopper can be processed using these as a mask to form the conductive layer 137R, the conductive layer 137G, and the conductive layer 137B. This allows the edge of the conductive layer 137R to coincide or approximately coincide with the edge of the layer 113R. Similarly, the edge of the conductive layer 137G can coincide or approximately coincide with the edge of the layer 113G. The edge of the conductive layer 137B can coincide or approximately coincide with the edge of the layer 113B.

[0205] For the conductive layers 137R, 137G, and 137B, it is preferable to use a material that has high resistance in forming the layers 113R, 113G, and 113B, specifically, a material that has a high etching selectivity with respect to the layers 113R, 113G, and 113B. Dry etching or wet etching can be used to form the layers 113R, 113G, and 113B. In particular, anisotropic dry etching can be preferably used.

[0206] In forming the layers 113R, 113G, and 113B, it is preferable to set the thicknesses of the conductive layers 137R, 137G, and 137B so that the conductive films (first etching stoppers) that will become the conductive layers 137R, 137G, and 137B cover the light-shielding layer 109 and prevent the light-shielding layer 109 from being exposed. Here, if the conductive layers 137R, 137G, and 137B are too thin, their function as etching stoppers may be reduced, while if they are too thick, productivity of the display device may be reduced. As shown in FIG. 7B , the thickness T137 of the conductive layer 137R can be set to the shortest distance between the surface on which the conductive layer 137R is formed (here, the upper surface of the pixel electrode 111R in the region where the conductive layer 137R and the pixel electrode 111R contact each other) and the upper surface of the conductive layer 137R in a cross-sectional view. The thickness T137 is preferably 5 nm or more and 100 nm or less, more preferably 10 nm or more and 100 nm or less, even more preferably 10 nm or more and 60 nm or less, even more preferably 20 nm or more and 60 nm or less, and even more preferably 20 nm or more and 40 nm or less. By setting the thickness T137 within the above range, it is possible to prevent the thickness of the light-shielding layer 109 from becoming thin and to improve the productivity of the display device. Note that the thickness T137 is not limited to the above range.

[0207] The conductive layer 137R, the conductive layer 137G, and the conductive layer 137B can be formed using, for example, an oxide conductor. The above-described materials can be used as the oxide conductor. The conductive layer 137R, the conductive layer 137G, and the conductive layer 137B can be formed using, for example, one or more of In—Sn oxide (ITO), In—Si—Sn oxide (ITSO), In—Zn oxide (IZO (registered trademark)), In—Ga—Zn oxide (IGZO), and In—Sn—Zn oxide (ITZO (registered trademark)).

[0208] The conductive layers 137R, 137G, and 137B are preferably made of a material that is transparent to visible light. The pixel electrodes 111R, 111G, and 111B are preferably made of a material that is reflective to visible light. The conductive layers 137R, 137G, and 137B function as transmissive electrodes, while the pixel electrodes 111R, 111G, and 111B function as reflective electrodes. This allows the pixel electrode 111R and the conductive layer 137R to function as semi-transmissive / semi-reflective electrodes for the light-emitting device 130R. Similarly, the pixel electrode 111G and the conductive layer 137G can function as semi-transmissive / semi-reflective electrodes for the light-emitting device 130G. The pixel electrode 111B and the conductive layer 137B can function as semi-transmissive / semi-reflective electrodes for the light-emitting device 130B. Furthermore, by using a material reflective to visible light for the common electrode 115, the common electrode 115 can function as a reflective electrode. This allows the light-emitting device to have a microcavity structure, allowing light from the light-emitting layer to resonate between the two electrodes, thereby intensifying the light emitted from the light-emitting device. The conductive layers 137R, 137G, and 137B can be said to function as optical adjustment layers. In this case, it is preferable to set the thicknesses of these conductive layers so that the optical path length is such that the light emitted from layers 113R, 113G, and 113B is intensified. In semi-transmissive / semi-reflective electrodes, the reflective electrode is sometimes referred to as a pixel electrode or common electrode, and the transparent electrode is sometimes referred to as an optical adjustment layer. However, the transparent electrode (optical adjustment layer) can also be said to function as a pixel electrode or common electrode.

[0209] For example, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B can each have a stacked structure of a first titanium film, an aluminum film on the first titanium film, and a second titanium film on the aluminum film. The conductive layer 137R, the conductive layer 137G, and the conductive layer 137B can each have a single-layer structure of an ITSO film. An aluminum film has high light reflectivity and is suitable as a reflective electrode. On the other hand, if an aluminum film comes into contact with an oxide conductor film (e.g., an ITSO film), electrolytic corrosion may occur. Therefore, it is preferable to provide a titanium film between the aluminum film and the oxide conductor film.

[0210] Note that the structures of the conductive layer 137R, the conductive layer 137G, and the conductive layer 137B shown here can also be applied to other structure examples.

[0211] Cross-sectional views of the insulating layer 104 taken along dashed line Y1-Y2 in FIG. 1A are shown in FIGS. 8A and 8B. As shown in FIG. 8A, a conductive layer 105p is provided on the insulating layer 104, a conductive layer 123 is provided on the conductive layer 105p, a conductive layer 137p is provided on the conductive layer 123, a common layer 114 is provided on the conductive layer 137p, and a common electrode 115 is provided on the common layer 114. The conductive layer 137p can be formed, for example, in the same process as the conductive layers 137R, 137G, and 137B. The connection portion 140 preferably has overlapping regions in this order of the conductive layers 105p, 123, 137p, the common layer 114, and the common electrode 115, without any other layers (e.g., layer 107p) in between. Increasing the area where these conductive layers contact each other can reduce the electrical resistance of the connection portion 140.

[0212] 8B , the connection portion 140 may be configured without the common layer 114. The connection portion 140 preferably has an area where the conductive layer 105p, the conductive layer 123, the conductive layer 137p, and the common electrode 115 overlap in this order without any other layers (e.g., layer 107p) in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0213] The connection portion 140 may also be configured without the conductive layer 137p (see FIGS. 6A and 6B ). For example, after forming the conductive films that will become the conductive layers 137R, 137G, and 137B, the conductive films in the connection portion 140 can be removed. When the electrical resistivity of the material used for the conductive layer 137p is higher than that of the material used for the conductive layer 105p and the conductive layer 123, not providing the conductive layer 137p in the connection portion 140 can reduce the electrical resistance of the connection portion 140, which is preferable. For example, the configuration of the connection portion 140 shown in FIG. 6A or 6B can be combined with the configuration shown in FIG. 7A .

[0214] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0215] [Structure Example 3] A modification of Fig. 7A is shown in Fig. 9A. For a top view of the display device, refer to Fig. 1A. Fig. 9A shows a structure in which the display device includes a conductive layer 135R, a conductive layer 135G, and a conductive layer 135B.

[0216] The light-emitting device 130R has a conductive layer 135R between the pixel electrode 111R and the conductive layer 137R. An enlarged view of the light-emitting device 130R and its vicinity is shown in Figure 9B. The light-emitting device 130R has a pixel electrode 111R, a conductive layer 135R on the pixel electrode 111R, a conductive layer 137R on the conductive layer 135R, an island-shaped layer 113R on the conductive layer 137R, a common layer 114 on the layer 113R, and a common electrode 115 on the common layer 114.

[0217] The light-emitting device 130G has a conductive layer 135G between the pixel electrode 111G and the conductive layer 137G. The light-emitting device 130G has a pixel electrode 111G, a conductive layer 135G on the pixel electrode 111G, a conductive layer 137G on the conductive layer 135G, an island-shaped layer 113G on the conductive layer 137G, a common layer 114 on the layer 113G, and a common electrode 115 on the common layer 114.

[0218] The light-emitting device 130B has a conductive layer 135B between the pixel electrode 111B and the conductive layer 137B. The light-emitting device 130B has a pixel electrode 111B, a conductive layer 135B on the pixel electrode 111B, a conductive layer 137B on the conductive layer 135B, an island-shaped layer 113B on the conductive layer 137B, a common layer 114 on the layer 113B, and a common electrode 115 on the common layer 114.

[0219] The conductive layers 135R, 135G, and 135B may be formed in the same process, for example. Note that, hereinafter, the conductive layers 135R, 135G, and 135B may be collectively referred to as the conductive layer 135.

[0220] The conductive layer 135R is provided to cover the pixel electrode 111R and has a region in contact with the upper surface and side surfaces of the pixel electrode 111R. Similarly, the conductive layer 135G is provided to cover the pixel electrode 111G and has a region in contact with the upper surface and side surfaces of the pixel electrode 111G. The conductive layer 135B is provided to cover the pixel electrode 111B and has a region in contact with the upper surface and side surfaces of the pixel electrode 111B. The light-shielding layer 109 is provided to cover a portion of the conductive layer 135R, a portion of the conductive layer 135G, and a portion of the conductive layer 135B. The light-shielding layer 109 has a region overlapping a portion of the conductive layer 135R, a portion of the conductive layer 135G, and a portion of the conductive layer 135B.

[0221] It is preferable that the light-shielding layer 109 not be provided in the region of the conductive layer 135R that is provided along the upper surface of the layer 107R. That is, in a cross-sectional view, the height H135 of the upper surface of the conductive layer 135R is preferably higher than the height H109 of the upper surface of the light-shielding layer 109. In FIG. 9B , the height H135 from the surface on which the conductive layer 105R is formed (here, the upper surface of the insulating layer 104 in the region where the conductive layer 105R and the insulating layer 104 contact each other) to the upper surface of the conductive layer 135R at the highest point is shown, and the height H109 from the upper surface of the light-shielding layer 109 at the highest point is also shown. By making the height H135 higher than the height H109, ​​the light-shielding layer 109 is not provided in the region of the conductive layer 135R that is provided along the upper surface of the layer 107R, and the contact area between the conductive layer 135R and the layer 113R can be increased. The same applies to the conductive layers 135G and 135B. This makes it possible to increase the area of ​​the light-emitting region of the light-emitting device, thereby making it possible to provide a display device with a high aperture ratio.

[0222] The conductive layers 135R, 135G, and 135B function as etching stoppers when forming the light-shielding layer 109. The conductive layers 135R, 135G, and 135B may be referred to as second etching stoppers. For example, the conductive layers 135R, 135G, and 135B are formed on the pixel electrodes 111R, 111G, and 111B. A light-shielding film that becomes the light-shielding layer 109 is formed on the pixel electrodes 111R, 111G, 111B, the conductive layers 135R, 135G, and 135B. Then, the light-shielding layer 109 can be formed by removing a portion of the light-shielding film to expose the conductive layers 135R, 135G, and 135B. When the light-shielding layer 109 is formed, the pixel electrodes 111R, 111G, and 111B are covered with the second etching stopper, so that the pixel electrodes 111R, 111G, and 111B are prevented from being etched and becoming thin, thereby preventing the electrical resistance of the pixel electrodes from becoming high.

[0223] The second etching stopper is preferably made of a material that is highly resistant to the formation of the light-shielding layer 109, specifically, a material that has a large etching selectivity with respect to the light-shielding layer 109. The light-shielding layer 109 can be formed by dry etching or chemical mechanical polishing (CMP). In particular, anisotropic dry etching is preferably used.

[0224] In forming the light-shielding layer 109, it is preferable to set the thicknesses of the conductive layers 135R, 135G, and 135B so that the conductive film (second etching stopper) that becomes the conductive layers 135R, 135G, and 135B covers the pixel electrodes 111R, 111G, and 111B and prevents the pixel electrodes from being exposed. Here, if the conductive layers 135R, 135G, and 135B are too thin, their function as etching stoppers may be impaired, while if they are too thick, productivity of the display device may be reduced. As shown in FIG. 9B , the thickness T135 of the conductive layer 135R can be the shortest distance between the surface on which the conductive layer 135R is formed in a cross-sectional view (here, the upper surface of the pixel electrode 111R in the region where the conductive layer 135R and the pixel electrode 111R contact each other) and the upper surface of the conductive layer 135R. The thickness T135 is preferably 5 nm or more and 100 nm or less, more preferably 10 nm or more and 100 nm or less, even more preferably 10 nm or more and 60 nm or less, even more preferably 20 nm or more and 60 nm or less, and even more preferably 20 nm or more and 40 nm or less. By setting the thickness T135 within the above range, it is possible to prevent the thickness of the pixel electrode 111 from becoming thin and to improve the productivity of the display device. Note that the thickness T135 is not limited to the above range.

[0225] The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can be formed using, for example, an oxide conductor. The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can be formed using the same material as that used for the conductive layer 137R, the conductive layer 137G, and the conductive layer 137B. The conductive layer 135R, the conductive layer 135G, and the conductive layer 135B can be formed using, for example, one or more of In—Sn oxide (ITO), In—Si—Sn oxide (ITSO), In—Zn oxide (IZO (registered trademark)), In—Ga—Zn oxide (IGZO), and In—Sn—Zn oxide (ITZO (registered trademark)).

[0226] The conductive layers 135R, 135G, and 135B can be made of the same material as the conductive layers 137R, 137G, and 137B. Using the same material for these layers allows for the use of common equipment for their formation, thereby improving productivity and reducing manufacturing costs. Furthermore, for example, using the same material for the conductive layers 135R and 137R can make the refractive indices of these conductive layers the same or approximately the same. This reduces the effects of refraction and reflection in the conductive layers 135R and 137R, thereby improving the light extraction efficiency of the light-emitting device. For example, the conductive layers 135R, 135G, and 135B, and the conductive layers 137R, 137G, and 137B can be made of In—Si—Sn oxide (ITSO). Alternatively, the conductive layers 135R, 135G, and 135B can be formed using a material different from that of the conductive layers 137R, 137G, and 137B.

[0227] The conductive layers 135R, 135G, 135B, 137R, 137G, and 137B are preferably made of a material that is transparent to visible light. The pixel electrodes 111R, 111G, and 111B are preferably made of a material that is reflective to visible light. The conductive layers 135R, 135G, 135B, 137R, 137G, and 137B function as transmissive electrodes, while the pixel electrodes 111R, 111G, and 111B function as reflective electrodes. This allows the pixel electrode 111R, 137R, and 135R to function as semi-transmissive / semi-reflective electrodes of the light-emitting device 130R. Similarly, the pixel electrode 111G, 137G, and 135G can function as semi-transmissive / semi-reflective electrodes of the light-emitting device 130G. The pixel electrode 111B, the conductive layer 137B, and the conductive layer 135B can function as semi-transmissive / semi-reflective electrodes of the light-emitting device 130B. Furthermore, by using a material reflective to visible light for the common electrode 115, the common electrode 115 can function as a reflective electrode. This allows the light-emitting device to have a micro-optical resonator (microcavity) structure, causing light from the light-emitting layer to resonate between the two electrodes, thereby intensifying the light emitted from the light-emitting device. The conductive layers 135R, 135G, 135B, 137R, 137G, and 137B can function as optical adjustment layers. In this case, it is preferable to set the thicknesses of these conductive layers so as to obtain an optical path length that intensifies the light emitted by the layers 113R, 113G, and 113B, respectively.

[0228] For example, the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B can each have a stacked structure of a first titanium film, an aluminum film on the first titanium film, and a second titanium film on the aluminum film. The conductive layer 135R, the conductive layer 135G, the conductive layer 135B, the conductive layer 137R, the conductive layer 137G, and the conductive layer 137B can each have a single-layer structure of an ITSO film.

[0229] 9A , the conductive layers 135R, 135G, and 135B are all shown to have the same thickness, but this is not a limitation of one embodiment of the present invention. The conductive layers 135R, 135G, and 135B may have different thicknesses. For example, it is preferable to set the thicknesses so that the optical path length increases the intensity of light emitted from the layers 113R, 113G, and 113B. This allows a microcavity structure to be realized, and the color purity of each light-emitting device to be improved.

[0230] 10A and 10B show cross-sectional views taken along dashed line Y1-Y2 in FIG. 1A . As shown in FIG. 10A , a conductive layer 105p is provided on an insulating layer 104, a conductive layer 123 is provided on the conductive layer 105p, a conductive layer 135p is provided on the conductive layer 123, a conductive layer 137p is provided on the conductive layer 135p, a common layer 114 is provided on the conductive layer 137p, and a common electrode 115 is provided on the common layer 114. The conductive layer 135p can be formed, for example, in the same process as the conductive layers 135R, 135G, and 135B. The connection portion 140 preferably has an overlapping region in this order of the conductive layer 105p, the conductive layer 123, the conductive layer 135p, the conductive layer 137p, the common layer 114, and the common electrode 115, without any other layer (e.g., layer 107p) in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0231] 10B , the connection portion 140 may be configured without the common layer 114. The connection portion 140 preferably has an overlapping region in which the conductive layers 105p, 123, 135p, 137p, and the common electrode 115 overlap in this order, without any other layers (e.g., layer 107p) in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0232] The connection portion 140 may also be configured without the conductive layer 135p (see FIGS. 8A and 8B ). For example, after forming the conductive films that will become the conductive layers 135R, 135G, and 135B, the conductive films in the connection portion 140 may be removed. When the electrical resistivity of the material used for the conductive layer 135p is higher than that of the material used for the conductive layers 105p and 123, not providing the conductive layer 135p in the connection portion 140 can reduce the electrical resistance of the connection portion 140, which is preferable. Alternatively, the connection portion 140 may be configured without both the conductive layer 135p and the conductive layer 137p (see FIGS. 6A and 6B ). For example, the configuration of the connection portion 140 shown in FIG. 6A , 6B , 8A , or 8B may be combined with the configuration shown in FIG. 9A .

[0233] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0234] 9A and 9B show a structure in which the light-shielding layer 109 has a region in contact with the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B, but one embodiment of the present invention is not limited to this. As shown in Figures 11A and 11B, a structure in which the light-shielding layer 109 is not in contact with the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B is also possible.

[0235] The conductive layer 135R covers the entire pixel electrode 111R and the conductive layer 105R, and an end of the conductive layer 135R contacts the upper surface of the insulating layer 104. Similarly, the conductive layer 135G covers the entire pixel electrode 111G and the conductive layer 105G, and an end of the conductive layer 135G contacts the upper surface of the insulating layer 104. The conductive layer 135B covers the entire pixel electrode 111B and the conductive layer 105B, and an end of the conductive layer 135B contacts the upper surface of the insulating layer 104. A light-shielding layer 109 is provided between the conductive layer 135R and the conductive layer 135G, and a light-shielding layer 109 is provided between the conductive layer 135G and the conductive layer 135B.

[0236] Depending on the material used for light-shielding layer 109, adhesion between light-shielding layer 109 and a layer on which light-shielding layer 109 is formed (for example, a pixel electrode) may be low, and gaps may be generated between them, resulting in a decrease in light-shielding properties. By using a material that has high adhesion to light-shielding layer 109 for conductive layer 135R, conductive layer 135G, and conductive layer 135B, and covering pixel electrode 111R, pixel electrode 111G, pixel electrode 111B, conductive layer 105R, conductive layer 105G, and conductive layer 105B with these conductive layers, it is possible to improve the light-shielding properties.

[0237] The conductive layer 135 also comes into contact with the side surfaces of the pixel electrodes 111, so that the contact area between them is increased, and the contact resistance between the conductive layer 135 and the pixel electrodes 111 can be reduced.

[0238] The configurations of the conductive layer 135R, the conductive layer 135G, and the conductive layer 135B shown in FIGS. 11A and 11B can also be applied to other configuration examples.

[0239] [Configuration Example 4] A modification of Fig. 9A is shown in Fig. 12A. For a top view of the display device, refer to Fig. 1A. Fig. 12A shows a configuration in which the display device does not have plugs 256R, 256G, and 256B. Fig. 12B shows an enlarged view of light-emitting device 130R and its vicinity.

[0240] The insulating layer 104 has an opening 257R that reaches the conductive layer 250R, an opening 257G that reaches the conductive layer 250G, and an opening 257G that reaches the conductive layer 250G.

[0241] The conductive layer 105R is provided so as to cover the opening 257R. The conductive layer 105R is in contact with the conductive layer 250R in the opening 257R and is electrically connected to the conductive layer 250R. The conductive layer 105G is provided so as to cover the opening 257G. The conductive layer 105G is in contact with the conductive layer 250G in the opening 257G and is electrically connected to the conductive layer 250G. The conductive layer 105B is provided so as to cover the opening 257B. The conductive layer 105B is in contact with the conductive layer 250B in the opening 257B and is electrically connected to the conductive layer 250B.

[0242] 13A shows a top view of the opening 257R, the opening 257G, the opening 257B, the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B. As shown in FIG. 13A, in the top view, it is preferable that the conductive layer 105R includes the opening 257R, the conductive layer 105G includes the opening 257G, and the conductive layer 105B includes the opening 257B.

[0243] Conductive layer 105R has a recess at a position overlapping opening 257R. The recess is filled with layer 107R. Similarly, conductive layer 105G has a recess at a position overlapping opening 257G. The recess is filled with layer 107G. Conductive layer 105B has a recess at a position overlapping opening 257B. The recess is filled with layer 107B.

[0244] FIG. 13B shows a top view of FIG. 13A with layers 107R, 107G, and 107B added. As shown in FIG. 13B, in the top view, layer 107R preferably includes opening 257R, and conductive layer 105R preferably includes layer 107R. Similarly, layer 107G preferably includes opening 257G, and conductive layer 105G preferably includes layer 107G. Layer 107B preferably includes opening 257B, and conductive layer 105B preferably includes layer 107B.

[0245] 13C is a top view of FIG. 13B with pixel electrodes 111R, 111G, and 111B added. As shown in FIG. 13C, in the top view, it is preferable that pixel electrode 111R includes layer 107R, pixel electrode 111G includes layer 107G, and pixel electrode 111B includes layer 107B.

[0246] 13D is a top view of Fig. 13C with the addition of a light-shielding layer 109. As shown in Fig. 13D, in the top view, the light-shielding layer 109 is provided between adjacent pixel electrodes 111. The light-shielding layer 109 is provided, for example, between the pixel electrode 111R and the pixel electrode 111G, and between the pixel electrode 111G and the pixel electrode 111B.

[0247] By filling the recesses caused by the openings 257R, 257G, and 257B with the layers 107R, 107G, and 107B, the upper surfaces of the pixel electrodes 111R, 111G, and 111B provided on the recesses can be made flatter. This allows the areas overlapping with the openings 257R, 257G, and 257B to be used as light-emitting regions of the light-emitting device. This allows the area of ​​the light-emitting region of the light-emitting device to be increased, resulting in a display device with a high aperture ratio.

[0248] The configurations of the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, the layer 107R, the layer 107G, and the layer 107B shown here can also be applied to other configuration examples.

[0249] Cross-sectional views taken along dashed line Y1-Y2 in FIG. 1A are shown in FIGS. 14A to 14E . As shown in FIG. 14A , an opening 257p is provided in the insulating layer 104, reaching the conductive layer 250p. A conductive layer 105p is provided to cover the opening 257p. A conductive layer 123 is provided on the conductive layer 105p. A conductive layer 135p is provided on the conductive layer 123. A conductive layer 137p is provided on the conductive layer 135p. A common layer 114 is provided on the conductive layer 137p. A common electrode 115 is provided on the common layer 114. The connection portion 140 preferably has an overlapping region in this order of the conductive layer 105p, the conductive layer 123, the conductive layer 135p, the conductive layer 137p, the common layer 114, and the common electrode 115, without any other layers (e.g., layer 107p) in between. Increasing the area where these conductive layers contact each other can reduce the electrical resistance of the connection portion 140.

[0250] 14B , the connection portion 140 may be configured without the common layer 114. The connection portion 140 preferably has an overlapping region in which the conductive layers 105p, 123, 135p, 137p, and the common electrode 115 overlap in this order, without any other layers (e.g., layer 107p) in between. By increasing the area where these conductive layers contact each other, the electrical resistance of the connection portion 140 can be reduced.

[0251] As shown in FIG. 14C , the connection portion 140 may be configured without the conductive layer 137p. The connection portion 140 preferably has an overlapping region in which the conductive layer 105p, the conductive layer 123, the conductive layer 135p, and the common electrode 115 overlap in this order without any other layers in between. For example, after forming the conductive films that will become the conductive layers 137R, 137G, and 137B, the conductive films in the connection portion 140 can be removed. If the material used for the conductive layer 137p has a higher electrical resistivity than the material used for the conductive layers 105p and 123, not providing the conductive layer 137p in the connection portion 140 is preferable because the electrical resistance in the connection portion 140 can be reduced.

[0252] As shown in FIG. 14D , the connection portion 140 may be configured without the conductive layer 135p. The connection portion 140 preferably has an overlapping region in which the conductive layers 105p, 123, 137p, and the common electrode 115 overlap in this order without any other layers in between. For example, after forming the conductive films that will become the conductive layers 135R, 135G, and 135B, the conductive films in the connection portion 140 can be removed. If the material used for the conductive layer 135p has a higher electrical resistivity than the material used for the conductive layers 105p and 123, not providing the conductive layer 135p in the connection portion 140 can reduce the electrical resistance in the connection portion 140, which is preferable.

[0253] As shown in FIG. 14E, the connecting portion 140 may be configured without both the conductive layer 135p and the conductive layer 137p.

[0254] The configuration of the connection section 140 shown here can also be applied to other configuration examples.

[0255] [Configuration Example 5] A modification of Fig. 12A is shown in Fig. 15A. For a top view of the display device, refer to Fig. 1A. Fig. 15A shows a configuration in which the display device has an insulating layer 180. An enlarged view of a light-emitting device 130R and its vicinity is shown in Fig. 15B.

[0256] The insulating layer 180 is provided between the conductive layer 137 and the light-shielding layer 109. The insulating layer 180 is provided on the light-shielding layer 109, and the conductive layer 137 is provided on the insulating layer 180. The insulating layer 180 can be made of any of the materials that can be used for the layer 107.

[0257] Here, if the difference in height between the upper surface of the conductive layer 135 and the upper surface of the light-shielding layer 109 becomes large, the coverage of the pixel electrode 111 and the layer provided on the light-shielding layer 109 (e.g., layer 113R) will be reduced, and there is a risk of discontinuities occurring in these layers. By providing an insulating layer 180 on the light-shielding layer 109, the occurrence of discontinuities can be suppressed. Note that the light transmittance of the insulating layer 180 is not particularly limited.

[0258] In a cross-sectional view, it is more preferable that the height of the upper surface of the region of the conductive layer 135 provided along the upper surface of the layer 107 is the same as or approximately the same as the height of the upper surface of the insulating layer 180. Furthermore, it is preferable that the insulating layer 180 is not provided in the region of the conductive layer 135 provided along the upper surface of the layer 107. That is, in a cross-sectional view, it is preferable that the height of the upper surface of the conductive layer 135 is the same as or higher than the height of the upper surface of the insulating layer 180. In FIG. 15B , the height H135 from the surface on which the conductive layer 105R is formed (here, the upper surface of the insulating layer 104 in the region where the conductive layer 105R and the insulating layer 104 contact each other) to the upper surface of the conductive layer 135 at the highest point is shown, and the height H180 from the upper surface of the insulating layer 180 at the highest point is shown. By making the height H135 greater than the height H180, the insulating layer 180 is not provided in the region of the conductive layer 135R that is provided along the upper surface of the layer 107R, and the contact area between the conductive layer 135R and the conductive layer 137R can be increased. This increases the area of ​​the light-emitting region of the light-emitting device, resulting in a display device with a high aperture ratio.

[0259] 16A and 16B , a configuration may be adopted in which the insulating layer 180 is provided between the insulating layer 104 and the light-shielding layer 109. The insulating layer 180 is provided on the insulating layer 104, the light-shielding layer 109 is provided on the insulating layer 180, and the conductive layer 137 is provided on the light-shielding layer 109.

[0260] In a cross-sectional view, it is more preferable that the height of the upper surface of the region of the conductive layer 135 provided along the upper surface of the layer 107 is the same as or approximately the same as the height of the upper surface of the light-shielding layer 109. Furthermore, it is preferable that the light-shielding layer 109 is not provided in the region of the conductive layer 135 provided along the upper surface of the layer 107. In other words, in a cross-sectional view, it is preferable that the height of the upper surface of the conductive layer 135 is the same as or higher than the height of the upper surface of the light-shielding layer 109. In Figure 16B, the height H135 from the surface on which the conductive layer 105R is formed (here, the upper surface of the insulating layer 104 in the region where the conductive layer 105R and the insulating layer 104 contact each other) to the upper surface of the conductive layer 135 at the highest point is shown, and the height H109 to the upper surface of the light-shielding layer 109 at the highest point is shown. By making height H135 greater than height H109, ​​light-shielding layer 109 is not provided in the region of conductive layer 135R provided along the upper surface of layer 107R, and the contact area between conductive layer 135R and conductive layer 137R can be increased. This allows the area of ​​the light-emitting region of the light-emitting device to be increased, resulting in a display device with a high aperture ratio.

[0261] The insulating layer 180 may be made of a material that can be used for the light-shielding layer 109. This allows the insulating layer 180 to also function as a light-shielding layer, thereby further improving the light-shielding properties.

[0262] The configuration of the insulating layer 180 shown here can also be applied to other configuration examples.

[0263] 17A to 18, the display device can be provided with a lens array 133. The lens array 133 can be provided so as to overlap the light-emitting device.

[0264] 17A and 17B show an example in which a lens array 133 is provided on light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B via a protective layer 131. By forming the lens array 133 directly on the substrate on which the light-emitting devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices and the lens array.

[0265] 18 shows an example in which a substrate 120 provided with a lens array 133 is bonded onto a protective layer 131 by a resin layer 122. By providing the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process can be increased.

[0266] 17B shows an example in which a layer having a planarizing function is used as the protective layer 131, but as shown in FIGS. 17A and 18, the protective layer 131 may have no planarizing function. For example, by using an organic film for the protective layer 131, the upper surface of the protective layer 131 can be made flat. Furthermore, the protective layer 131 shown in FIGS. 17A and 18 can be formed by using, for example, an inorganic film.

[0267] The convex surface of the lens array 133 may be configured to face the substrate 120. Alternatively, the convex surface of the lens array 133 may be configured to face the light-emitting device.

[0268] The lens array 133 can be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin can be used for the lenses. Also, a material containing at least one of an oxide and a sulfide can be used for the lenses. For example, a microlens array can be used as the lens array 133. The lens array 133 can be formed directly on a substrate or a light-emitting device. Alternatively, a separately formed lens array can be attached to the light-emitting device.

[0269] As shown in FIGS. 19A and 19B , a display device may be provided with a colored layer. For example, a colored layer 132R that transmits red light may be provided over the red light-emitting device 130R, a colored layer 132G that transmits green light may be provided over the green light-emitting device 130G, and a colored layer 132B that transmits blue light may be provided over the blue light-emitting device 130B. For example, the colored layer 132R that transmits red light may be used to block unwanted wavelengths of light emitted from the red light-emitting device 130R. This configuration further enhances the color purity of the light emitted from each light-emitting device. Note that while the above description focuses on a red light-emitting device, similar effects can be achieved with the combination of a green light-emitting device 130G and a colored layer 132G, and with the combination of a blue light-emitting device 130B and a colored layer 132B.

[0270] By providing a colored layer overlapping the light-emitting device, external light reflection can be significantly reduced, which is preferable. Furthermore, by having a light-emitting device with a microcavity structure, external light reflection can be further reduced. Thus, by applying either a colored layer or a microcavity structure, or preferably both, external light reflection can be sufficiently suppressed without using an optical component such as a circular polarizer in the display device. By not using a circular polarizer in the display device, attenuation of the light emitted from the light-emitting device can be suppressed, and the light extraction efficiency of the light-emitting device can be increased. This allows the power consumption of the display device to be reduced.

[0271] It is preferable that the colored layers of different colors have overlapping portions. The overlapping portions of the colored layers of different colors can function as light-blocking layers, thereby further reducing the reflection of external light.

[0272] 19A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B via a protective layer 131. By forming the colored layers 132R, 132G, and 132B directly on the substrate on which the light-emitting devices are formed, the accuracy of alignment between the light-emitting devices and the colored layers can be improved. Furthermore, by positioning the light-emitting devices and the colored layers closer to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable.

[0273] As shown in Figure 19A, the colored layer is preferably provided on a protective layer 131 having a planarizing function. By forming the colored layer on a highly flat surface, it is possible to prevent the colored layer from having irregularities depending on the surface on which it is formed. This prevents a portion of the light emitted from the light-emitting device from being diffused by the irregularities of the colored layer, thereby improving the display quality of the display device. For example, it is preferable that the protective layer 131 has an inorganic insulating film on the common electrode 115 and an organic insulating film on the inorganic insulating film.

[0274] 19B shows an example in which a substrate 120 provided with colored layers 132R, 132G, and 132B is attached to a protective layer 131 by a resin layer 122. By providing the colored layers 132R, 132G, and 132B on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0275] As shown in Figures 20A to 21, the display device can be provided with both a colored layer and a lens array.

[0276] 20A shows an example in which colored layers 132R, 132G, and 132B are provided on light-emitting devices 130R, 130G, and 130B via a protective layer 131, an insulating layer 134 is provided on the colored layers 132R, 132G, and 132B, and a lens array 133 is provided on the insulating layer 134. By forming the colored layers 132R, 132G, 132B, and lens array 133 directly on a substrate on which light-emitting devices are formed, it is possible to improve the accuracy of alignment between the light-emitting devices and the colored layers or lens array.

[0277] The insulating layer 134 can be made of either or both of an inorganic insulating film and an organic insulating film. The insulating layer 134 can have a single-layer structure or a multi-layer structure. For example, the insulating layer 134 can be made of a material that can be used for the protective layer 131. Since light emitted from the light-emitting device is extracted through the insulating layer 134, it is preferable that the insulating layer 134 have high transparency to visible light.

[0278] 20A, light emitted from the light-emitting device passes through the colored layer and then passes through the lens array 133 to be extracted to the outside of the display device. By positioning the light-emitting device and the colored layer close to each other, color mixing can be suppressed and viewing angle characteristics can be improved, which is preferable. Note that the lens array 133 can be provided on the light-emitting device, and the colored layer can be provided on the lens array 133.

[0279] 20B shows an example in which a substrate 120 provided with colored layers 132R, 132G, 132B, and a lens array 133 is bonded to a protective layer 131 by a resin layer 122. By providing the colored layers 132R, 132G, 132B, and the lens array 133 on the substrate 120, the temperature of the heat treatment in the formation process of these layers can be increased.

[0280] Figure 20B shows an example in which colored layers 132R, 132G, and 132B are provided in contact with the substrate 120, an insulating layer 134 is provided in contact with the colored layers 132R, 132G, and 132B, and a lens array 133 is provided in contact with the insulating layer 134.

[0281] In Figure 20B, light emitted from the light-emitting device passes through the lens array 133, then passes through the colored layer, and is extracted to the outside of the display device. Note that the lens array 133 may be provided in contact with the substrate 120, the insulating layer 134 may be provided in contact with the lens array 133, and the colored layer may be provided in contact with the insulating layer 134. In this case, light emitted from the light-emitting device passes through the colored layer, then passes through the lens array 133, and is extracted to the outside of the display device. Note that, as shown in Figures 20A and 20B, it is preferable to provide an area where two colored layers overlap between the lens array 133 and an adjacent lens array 133. By providing an area where colored layers of different colors overlap, color mixing of the light emitted from the light-emitting device can be suppressed.

[0282] In Figure 21, a lens array 133 is provided on light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B via a protective layer 131, and a substrate 120 on which colored layers 132R, 132G, and 132B are provided is bonded to the lens array 133 and the protective layer 131 by a resin layer 122.

[0283] 21 , the lens array 133 may be provided on the substrate 120, and the colored layer may be formed directly on the protective layer 131. In this manner, one of the lens array 133 and the colored layer may be provided on the protective layer 131, and the other may be provided on the substrate 120.

[0284] 20A shows an example in which a layer having a planarizing function is used as the protective layer 131, but as shown in FIGS. 20B and 21 , the protective layer 131 may have no planarizing function. For example, by using an organic film for the protective layer 131, the upper surface of the protective layer 131 can be made flat. Furthermore, the protective layer 131 shown in FIGS. 20B and 21 can be formed by using, for example, an inorganic film.

[0285] The configuration of the lens array 133 and the colored layer shown here can also be applied to other configuration examples.

[0286] [Configuration Example 7] Fig. 22A shows a top view of a display device 100 different from that shown in Fig. 1A. The pixel 110 shown in Fig. 22A is composed of four types of subpixels: subpixel 11R, subpixel 11G, subpixel 11B, and subpixel 11S.

[0287] The subpixels 11R, 11G, 11B, and 11S may each have a light-emitting device that emits a different color light. For example, the subpixels 11R, 11G, 11B, and 11S may be subpixels of four colors R, G, B, and W, subpixels of four colors R, G, B, and Y, or subpixels of R, G, B, and IR.

[0288] A display device according to one embodiment of the present invention can include a light-receiving device in a pixel.

[0289] Of the four sub-pixels included in pixel 110 shown in FIG. 22A, three may have a light-emitting device and the remaining one may have a light-receiving device.

[0290] The light receiving device may be, for example, a pn-type or pin-type photodiode. The light receiving device functions as a photoelectric conversion device (also called a photoelectric conversion element) that detects light incident on the light receiving device and generates electric charges. The amount of electric charges generated by the light receiving device is determined based on the amount of light incident on the light receiving device.

[0291] The light-receiving device can detect one or both of visible light and infrared light. When detecting visible light, it can detect one or more of light such as blue, purple, blue-purple, green, yellow-green, yellow, orange, and red. When detecting infrared light, it is preferable because it enables detection of an object even in a dark place.

[0292] In particular, it is preferable to use an organic photodiode having a layer containing an organic compound as the light-receiving device. Organic photodiodes can be easily made thin, lightweight, and large in area, and have a high degree of freedom in shape and design, making them applicable to a variety of display devices.

[0293] In one embodiment of the present invention, an organic EL device is used as the light-emitting device, and an organic photodiode is used as the light-receiving device. The organic EL device and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built into a display device using the organic EL device.

[0294] The light-receiving device is driven by applying a reverse bias between the pixel electrode and the common electrode, so that it can detect light incident on the light-receiving device, generate electric charges, and extract them as a current.

[0295] The same manufacturing method as for the light-emitting device can be applied to the light-receiving device. The island-shaped active layer (also called a photoelectric conversion layer) of the light-receiving device is not formed using a fine metal mask, but is formed by depositing a film that will become the active layer on the entire surface and processing the film. Therefore, the island-shaped active layer can be formed with a uniform thickness. Furthermore, by providing a mask layer on the active layer, damage to the active layer during the manufacturing process of the display device can be reduced, thereby improving the reliability of the light-receiving device.

[0296] The sixth embodiment can be referred to for the configuration and materials of the light receiving device.

[0297] Fig. 22B shows a cross-sectional view taken along dashed dotted line X3-X4 in Fig. 22A. For a cross-sectional view taken along dashed dotted line X1-X2 in Fig. 22A, refer to Fig. 1B, and for a cross-sectional view taken along dashed dotted line Y1-Y2, refer to Fig. 6A, Fig. 6B, Fig. 8A, Fig. 8B, Fig. 10A, or Fig. 10B.

[0298] 22B , display device 100 has light-emitting device 130R and light-receiving device 150 provided on layer 101, protective layer 131 provided to cover the light-emitting device and light-receiving device, and substrate 120 bonded together by resin layer 122. In addition, insulating layer 125 and insulating layer 127 on insulating layer 125 are provided in the region between adjacent light-emitting device and light-receiving device.

[0299] FIG. 22B shows an example in which the light emitting device 130R emits light toward the substrate 120 side, and light is incident on the light receiving device 150 from the substrate 120 side (see light Lem and light Lin).

[0300] The configuration of the light-emitting device 130R is as described above.

[0301] The light-receiving device 150 has a pixel electrode 111S, a layer 113S on the pixel electrode 111S, a common layer 114 on the layer 113S, and a common electrode 115 on the common layer 114. The layer 113S includes at least an active layer.

[0302] A conductive layer 105S is provided on the insulating layer 104, a layer 107S is provided on the conductive layer 105S, and a pixel electrode 111S is provided on the layer 107S. The conductive layer 105S can be formed, for example, in the same process as the conductive layers 105R, 105G, and 105B. The layer 107S can be formed, for example, in the same process as the layers 107R, 107G, and 107B. The pixel electrode 111S is provided to cover the conductive layers 105S and 107S and has a region in contact with the conductive layer 105S. The conductive layer 105S has a region in contact with a plug 256S embedded in the insulating layer 104 and is electrically connected to the plug 256S. The plug 256S is in contact with a conductive layer 250S included in the layer 101 and is electrically connected to the conductive layer 250S. That is, the conductive layer 250S is electrically connected to the pixel electrode 111S via the plug 256S and the conductive layer 105S.

[0303] Here, the layer 113S includes at least an active layer and preferably has multiple functional layers. Examples of functional layers include a carrier transport layer (hole transport layer and electron transport layer) and a carrier block layer (hole block layer and electron block layer). It is also preferable to have one or more layers on the active layer. Having another layer between the active layer and the mask layer can prevent the active layer from being exposed to the outermost surface during the manufacturing process of the display device, thereby reducing damage to the active layer. This can improve the reliability of the light-receiving device 150. Therefore, the layer 113S preferably has an active layer and a carrier block layer (hole block layer or electron block layer) or a carrier transport layer (electron transport layer or hole transport layer) on the active layer.

[0304] The layer 113S is a layer provided in the light-receiving device 150 but not in the light-emitting device. However, functional layers other than the active layer included in the layer 113S may have the same material as functional layers other than the light-emitting layers included in the layers 113B to 113R. On the other hand, the common layer 114 is a continuous layer shared by the light-emitting device and the light-receiving device.

[0305] Here, a layer shared by a light-receiving device and a light-emitting device may have different functions in the light-emitting device and in the light-receiving device. In this specification, components may be referred to based on their functions in the light-emitting device. For example, a hole injection layer functions as a hole injection layer in the light-emitting device and as a hole transport layer in the light-receiving device. Similarly, an electron injection layer functions as an electron injection layer in the light-emitting device and as an electron transport layer in the light-receiving device. Furthermore, a layer shared by a light-receiving device and a light-emitting device may have the same functions in the light-emitting device and in the light-receiving device. For example, a hole transport layer functions as a hole transport layer in both the light-emitting device and the light-receiving device, and an electron transport layer functions as an electron transport layer in both the light-emitting device and the light-receiving device.

[0306] A mask layer 118R is located between the layer 113R and the insulating layer 125, and a mask layer 118S is located between the layer 113S and the insulating layer 125. The mask layer 118R is a remaining portion of a mask layer that was provided on the layer 113R when processing the layer 113R. The mask layer 118S is a remaining portion of a mask layer that was provided in contact with the upper surface of the layer 113S, which is a layer including an active layer, when processing the layer 113S. The mask layers 118B and 118S may be made of the same material or different materials.

[0307] 22A shows an example in which the aperture ratio (which can also be referred to as the size, the size of the light-emitting region, or the size of the light-receiving region) of subpixel 11S is larger than that of subpixels 11R, 11G, and 11B, but one embodiment of the present invention is not limited to this. The aperture ratios of subpixels 11R, 11G, 11B, and 11S can each be determined appropriately. The aperture ratios of subpixels 11R, 11G, 11B, and 11S can be configured to be different from each other, or any two or more of subpixels 11R, 11G, 11B, and 11S can be configured to be equal or approximately equal.

[0308] The subpixel 11S may have a higher aperture ratio than at least one of the subpixels 11R, 11G, and 11B. A larger light-receiving area of ​​the subpixel 11S may make it easier to detect an object. For example, depending on the resolution of the display device and the circuit configuration of the subpixels, the aperture ratio of the subpixel 11S may be higher than the aperture ratios of the other subpixels.

[0309] The subpixel 11S may have a lower aperture ratio than at least one of the subpixels 11R, 11G, and 11B. If the light-receiving area of ​​the subpixel 11S is small, the imaging range is narrowed, which makes it possible to suppress blurring in the imaging result and improve the resolution. This is preferable because it enables high-definition or high-resolution imaging.

[0310] In this way, the sub-pixel 11S can have a detection wavelength, resolution, and aperture ratio suited to the application.

[0311] The configuration of the sub-pixel 11S shown here can also be applied to other configuration examples.

[0312] In a display device according to one embodiment of the present invention, a light-shielding layer is provided between pixel electrodes, thereby preventing external light and light emitted from a light-emitting device from entering a transistor. This prevents light-induced fluctuations in the electrical characteristics of the transistor. Therefore, a highly reliable transistor can be obtained, leading to a highly reliable display device. Furthermore, since light is prevented from entering a layer including a transistor, stray light due to wiring or the like in the layer can be suppressed. This allows a display device with high contrast. Furthermore, a display device with high visibility can be obtained.

[0313] This embodiment mode can be combined with other embodiment modes as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0314] 23A to 35B , a manufacturing method of a display device according to one embodiment of the present invention will be described. Note that with regard to materials and formation methods of elements, descriptions of the same parts as those described in Embodiment 1 may be omitted. In addition, details of the structure of a light-emitting device will be described in Embodiment 5.

[0315] Here, an example of a method for manufacturing the display device shown in Fig. 12A will be described with reference to Fig. 23A to Fig. 35B , which show a cross-sectional view taken along dashed dotted line X1-X2 and a cross-sectional view taken along dashed dotted line Y1-Y2 in Fig. 1A side by side.

[0316] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting display devices can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0317] The thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by a wet film formation method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0318] In particular, vacuum processes such as vapor deposition and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers included in the EL layer (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, charge generation layer, etc.) can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0319] When processing the thin film that constitutes the display device, a photolithography method or the like can be used. Alternatively, the thin film can be processed by a nanoimprint method, a sandblasting method, a lift-off method, or the like. Furthermore, an island-shaped thin film can be directly formed by a film formation method using a shielding mask such as a metal mask.

[0320] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching or the like, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0321] In photolithography, the light used for exposure can be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other examples include ultraviolet light, KrF laser light, and ArF laser light. Exposure can also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays can also be used as the light used for exposure. An electron beam can also be used instead of the light used for exposure. Extreme ultraviolet light, X-rays, or an electron beam are preferred because they enable extremely fine processing. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

[0322] For etching the thin film, dry etching, wet etching, sandblasting, or the like can be used.

[0323] First, a conductive film that will become the conductive layers 250R, 250G, 250B, and 250p is formed on the substrate 103, and then processed to form the conductive layers 250R, 250G, 250B, and 250p. The conductive film can be preferably formed by sputtering.

[0324] Next, an insulating film that will become the insulating layer 104 is formed on the substrate 103, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p. The insulating film can be formed by a sputtering method or a PECVD method. An opening 257R that reaches the conductive layer 250R, an opening 257G that reaches the conductive layer 250G, an opening 257B that reaches the conductive layer 250B, and an opening 257p that reaches the conductive layer 250p are formed in the insulating film, thereby forming the insulating layer 104 ( FIG. 23A ).

[0325] Subsequently, a conductive film 105f to be the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, and the conductive layer 105p is formed over the insulating layer 104, the conductive layer 250R, the conductive layer 250G, the conductive layer 250B, and the conductive layer 250p. The conductive film 105f can be preferably formed by sputtering.

[0326] Next, a film 107f that will become layers 107R, 107G, 107B, and 107p is formed on the conductive film 105f (FIG. 23B). It is preferable that the film 107f is not provided in the connection portion 140. In particular, it is preferable that the film 107f is not provided in the region where the conductive film 105f and the conductive layer 250p are in contact with each other.

[0327] Subsequently, a mask film 193f is formed over the conductive film 105f and the film 107f, and a resist mask 195R, a resist mask 195G, a resist mask 195B, and a resist mask 195p are formed over the mask film 193f (FIG. 23C). The resist mask 195R, the resist mask 195G, the resist mask 195B, and the resist mask 195p are provided in regions where the layers 107R, 107G, 107B, and 107p are provided.

[0328] The mask film 193f is processed using the resist masks 195R, 195G, 195B, and 195p as masks to form mask layers 193R, 193G, 193B, and 193p. Note that, hereinafter, the mask layers 193R, 193G, 193B, and 193p may be collectively referred to as mask layers 193.

[0329] Subsequently, the resist mask 195R, the resist mask 195G, the resist mask 195B, and the resist mask 195p are removed (FIG. 24A).

[0330] Subsequently, the film 107f is processed using the mask layers 193R, 193G, 193B, and 193p as masks to form layers 107R, 107G, 107B, and 107p (FIG. 24B).

[0331] The mask layers 193R, 193G, 193B, and 193p function as hard masks when forming the layers 107R, 107G, 107B, and 107p. The conductivity of the mask layers 193R, 193G, 193B, and 193p is not particularly limited. For the mask layers 193R, 193G, 193B, and 193p, it is preferable to use a material that is highly resistant to the formation of the layers 107R, 107G, 107B, and 107p, specifically, a material that has a high etching selectivity with respect to the layers 107R, 107G, 107B, and 107p.

[0332] When resin is used for the layers 107R, 107G, 107B, and 107p, dry etching using a gas containing one or both of chlorine and fluorine can be suitably used for forming them. Oxygen gas can be mixed with the aforementioned gas. For example, CF ４Gas and oxygen gas can be preferably used. Furthermore, the mask layers 193R, 193G, 193B, and 193p preferably have a slow etching rate when dry-etched using a gas containing either or both of chlorine and fluorine. For example, the mask layers 193R, 193G, 193B, and 193p can preferably be made of one or more of In—Sn oxide (ITO), In—Si—Sn oxide (ITSO), In—Zn oxide (IZO (registered trademark)), In—Ga—Zn oxide (IGZO), and In—Sn—Zn oxide (ITZO (registered trademark)). Alternatively, dry-etching using a gas containing oxygen can be preferably used to form the layers 107R, 107G, 107B, and 107p. The mask layers 193R, 193G, 193B, and 193p may be made of, for example, one or more of molybdenum, tungsten, titanium, and aluminum.

[0333] Next, the mask layers 193R, 193G, 193B, and 193p are removed (FIG. 24C). Wet etching can be suitably used to remove the mask layers 193R, 193G, 193B, and 193p.

[0334] By forming the layers 107R, 107G, 107B, and 107p using a hard mask, the distance between adjacent layers 107 can be narrowed, and the distance between adjacent light-emitting devices can be narrowed. Note that the layers 107R, 107G, 107B, and 107p can also be formed without using a hard mask. For example, when a photosensitive resin is used for the layers 107R, 107G, 107B, and 107p, the layers 107R, 107G, 107B, and 107p can be formed by exposing and developing the film 107f.

[0335] Subsequently, a conductive film 111f to become the pixel electrodes 111R, 111G, and 111B and the conductive layer 123 is formed on the conductive film 105f, the layer 107R, the layer 107G, the layer 107B, and the layer 107p ( FIG. 25A ). The conductive film 111f can be formed by, for example, sputtering or vacuum deposition.

[0336] Next, the conductive films 105f and 111f are processed to form the conductive layers 105R, 105G, 105B, 105p, the pixel electrodes 111R, 111G, 111B, and the conductive layer 123 ( FIG. 25B ). Dry etching can be suitably used to form these conductive layers. Processing the conductive films 105f and 111f in the same process can improve the productivity of the display device and reduce manufacturing costs. Furthermore, the edges of the conductive layer 105R and the pixel electrode 111R can be aligned or approximately aligned, the edges of the conductive layer 105G and the pixel electrode 111G can be aligned or approximately aligned, the edges of the conductive layer 105B and the pixel electrode 111B can be aligned or approximately aligned, and the edges of the conductive layer 105p and the conductive layer 123 can be aligned or approximately aligned. The conductive layers 105R, 105G, 105B, and 105p may be formed in a different process from that for forming the pixel electrodes 111R, 111G, 111B, and the conductive layer 123.

[0337] Subsequently, the conductive layers 135R, 135G, 135B, and 135p are formed over the pixel electrodes 111R, 111G, and 111B and the conductive layer 123 ( FIG. 25C ). The conductive films that become the conductive layers 135R, 135G, 135B, and 135p can be preferably formed by sputtering.

[0338] Note that although an example is shown here in which the conductive layers 135R, 135G, 135B, and 135p are formed after the pixel electrodes 111R, 111G, and 111B and the conductive layer 123 are formed, one embodiment of the present invention is not limited to this. For example, layers 107R, 107G, 107B, and 107p are formed over the conductive film 105f, and then the conductive film 111f is formed over the conductive film 105f, 107R, 107G, 107B, and 107p. Conductive films to become the conductive layers 135R, 135G, 135B, and 135p are formed over the conductive film 111f. Then, by processing the conductive film, the conductive film 111f, and the conductive film 105f, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, the conductive layer 135p, the pixel electrode 111R, the pixel electrode 111G, the pixel electrode 111B, the conductive layer 123, the conductive layer 105R, the conductive layer 105G, the conductive layer 105B, and the conductive layer 105p can be formed. At this time, a configuration in which the edges of these layers coincide or almost coincide with each other can be adopted. Processing these conductive films in the same process can increase the productivity of the display device and reduce manufacturing costs.

[0339] Next, a light-shielding film 109f that will become the light-shielding layer 109 is formed on the insulating layer 104, the conductive layer 135R, the conductive layer 135G, the conductive layer 135B, and the conductive layer 135p ( FIG. 26A ). It is preferable that the light-shielding film 109f is not provided in the connection portion 140. In particular, it is preferable that the light-shielding film 109f is not provided in the region where the conductive layer 105p and the conductive layer 250p are in contact with each other.

[0340] Next, a portion of the light-shielding film 109f is removed to expose the conductive layers 135R, 135G, 135B, and 135p, thereby forming the light-shielding layer 109 ( FIG. 26B ). The light-shielding layer 109 can be formed by dry etching or chemical mechanical polishing (CMP).

[0341] The conductive layers 135R, 135G, and 135B function not only as an etching stopper when forming the light-shielding layer 109, but also as optical adjustment layers. For the conductive layers 135R, 135G, 135B, and 135p, it is preferable to use a material that is highly resistant to the formation of the light-shielding layer 109, specifically, a material that has a large etching selectivity with respect to the light-shielding layer 109.

[0342] When a resin is used for the light-shielding layer 109, the light-shielding film 109f can be processed by dry etching using a gas containing either or both of chlorine and fluorine. The above-mentioned gas can be mixed with oxygen gas. For example, SF ６ Gas containing chlorine and / or fluorine can be preferably used. The conductive layers 135R, 135G, 135B, and 135p preferably have a slow etching rate when dry-etched with a gas containing chlorine and / or fluorine. The materials that can be used for the conductive layers 135R, 135G, 135B, and 135p are as described above.

[0343] Subsequently, a conductive film 137f that will become conductive layers 137R, 137G, 137B, and 137p is formed on the light-shielding layer 109, conductive layers 135R, 135G, 135B, and 135p (FIG. 26C).

[0344] Subsequently, a film 113b that will become the layer 113B, a mask film 118b that will become the mask layer 118B, and a mask film 119b are formed on the conductive film 137f (FIG. 27A). The film 113b contains a light-emitting material that emits blue light.

[0345] It is preferable that the film 113b is not provided in the connection portion 140. In particular, it is preferable that the film 107f is not provided in the region where the conductive film 105f and the conductive layer 250p are in contact with each other. For example, by using an area mask, the film 113b can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, a light-emitting device can be manufactured by a relatively simple process.

[0346] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Specifically, the heat resistance temperature of the compound contained in the film 113b is preferably 100° C. or higher and 180° C. or lower, preferably 120° C. or higher and 180° C. or lower, and more preferably 140° C. or higher and 180° C. or lower. This can improve the reliability of the light-emitting device. Furthermore, the upper limit of the temperature to be applied in the manufacturing process of the display device can be increased. Therefore, the range of choices for materials and formation methods used in the display device can be expanded, and the manufacturing yield and reliability can be improved.

[0347] The film 113b can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method, or by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0348] In this embodiment, an example is shown in which the mask film is formed in a two-layer structure of the mask film 118b and the mask film 119b, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0349] By providing a mask layer over the film 113b, damage to the film 113b during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0350] The mask film 118b is made of a film that is highly resistant to the processing conditions of the film 113b, specifically, a film that has a high etching selectivity with respect to the film 113b.The mask film 119b is made of a film that has a high etching selectivity with respect to the mask film 118b.

[0351] The mask films 118b and 119b are formed at a temperature lower than the heat-resistant temperature of the film 113b. The substrate temperature when forming the mask films 118b and 119b is typically 200°C or lower, preferably 150°C or lower, more preferably 120°C or lower, more preferably 100°C or lower, and even more preferably 80°C or lower.

[0352] Examples of heat resistance temperature indicators include the glass transition point (Tg), softening point, melting point, thermal decomposition temperature, and 5% weight loss temperature. For example, the glass transition point (Tg) of the material contained in each layer constituting the EL layer can be used as an indicator of the heat resistance temperature. Furthermore, when the layer is a mixed layer made of multiple materials, for example, the glass transition point of the material contained in the largest amount can be used. Alternatively, the lowest temperature among the glass transition points of the multiple materials can be used.

[0353] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperature during the formation of the mask film can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher. For example, the inorganic insulating film can be made denser and have a higher barrier property as the film formation temperature increases. Therefore, by forming the mask film at such a temperature, damage to the film 113b can be further reduced, and the reliability of the light-emitting device can be improved.

[0354] It is preferable to use a film that can be removed by wet etching for the mask films 118b and 119b, since wet etching can reduce damage to the film 113b during processing of the mask films 118b and 119b compared to dry etching.

[0355] The mask films 118b and 119b can be formed by, for example, sputtering, ALD (including thermal ALD and PEALD), CVD, vacuum deposition, or the wet film formation method described above.

[0356] It is preferable that the mask film 118b formed on and in contact with the film 113b be formed using a formation method that causes less damage to the film 113b than the mask film 119b. For example, it is preferable to form the mask film 118b using the ALD method or the vacuum deposition method rather than the sputtering method.

[0357] For each of the mask films 118b and 119b, for example, one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, and the like can be used.

[0358] The mask films 118b and 119b can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the mask films 118b and 119b is preferable because it can prevent ultraviolet rays from irradiating the film 113b and thereby prevent deterioration of the film 113b.

[0359] Using a metal film or an alloy film for one or both of the mask films 118b and 119b is preferable because plasma damage to the film 113b can be suppressed and deterioration of the film 113b can be suppressed. Specifically, plasma damage to the film 113b can be suppressed in processes using a dry etching method and ashing processes. In particular, using a metal film or an alloy film such as a tungsten film as the mask film 119b is preferable.

[0360] The mask film 118b and the mask film 119b can be made of a metal oxide such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or indium tin oxide containing silicon.

[0361] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) can be used.

[0362] As the mask film, a film containing a material having light-shielding properties, particularly against ultraviolet light, can be used. For example, a film having reflectivity to ultraviolet light or a film absorbing ultraviolet light can be used. As the light-shielding material, various materials such as metals, insulators, semiconductors, and semimetals having light-shielding properties against ultraviolet light can be used. However, since part or all of the mask film will be removed in a later process, it is preferable that the mask film be a film that can be processed by etching, and particularly preferable that the processability is good.

[0363] For example, semiconductor materials such as silicon or germanium can be used as materials that are highly compatible with semiconductor manufacturing processes. Alternatively, oxides or nitrides of the above semiconductor materials can be used. Alternatively, non-metallic materials such as carbon or compounds thereof can be used. Alternatively, metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these, can be used. Alternatively, oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can be used.

[0364] By using a film containing a material having ultraviolet light blocking properties as the mask film, it is possible to prevent the EL layer from being exposed to ultraviolet light during the exposure process, etc. By preventing the EL layer from being damaged by ultraviolet light, the reliability of the light-emitting device can be improved.

[0365] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the insulating film 125f described later.

[0366] The mask films 118b and 119b can each be made of any of various inorganic insulating films that can be used for the protective layer 131. In particular, oxide insulating films are preferable because they have higher adhesion to the film 113b than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the mask films 118b and 119b. For example, aluminum oxide films can be formed as the mask films 118b and 119b by the ALD method. Using the ALD method is preferable because it can reduce damage to the underlying layer (particularly the EL layer).

[0367] For example, an inorganic insulating film (e.g., an aluminum oxide film) formed using the ALD method can be used as the mask film 118b, and an inorganic film (e.g., an In-Ga-Zn oxide film, a silicon film, or a tungsten film) formed using the sputtering method can be used as the mask film 119b.

[0368] The same inorganic insulating film can be used for both the mask film 118b and the insulating layer 125 to be formed later. For example, an aluminum oxide film formed using an ALD method can be used for both the mask film 118b and the insulating layer 125. The same deposition conditions can be applied to the mask film 118b and the insulating layer 125. Alternatively, different deposition conditions can be applied to the mask film 118b and the insulating layer 125. For example, by depositing the mask film 118b under the same conditions as the insulating layer 125, the mask film 118b can be an insulating layer with high barrier properties against at least one of water and oxygen. On the other hand, since the mask film 118b is a layer that is removed mostly or entirely in a later process, it is preferable that it be easily processed. Therefore, it is preferable that the mask film 118b be deposited under conditions where the substrate temperature during deposition is lower than that of the insulating layer 125.

[0369] An organic material can be used for one or both of the mask films 118b and 119b. For example, the organic material can be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of the film 113b. In particular, a material that dissolves in water or alcohol can be preferably used. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. In this case, performing the heat treatment under a reduced pressure atmosphere is preferable because it allows the solvent to be removed at a low temperature and in a short time, thereby reducing thermal damage to the film 113b.

[0370] The mask film 118b may be made of a material that is more water-soluble than the film 113b. For example, the mask film 118b may be made of a material that dissolves in an aqueous solution containing hydrofluoric acid (HF). Alternatively, the mask film 118b may be made of a material that dissolves in an aqueous solution containing tetramethylammonium hydroxide (TMAH).

[0371] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq ３ ), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２ ), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), or other metal complexes can be used for the mask film 118b.

[0372] It is preferable that the mask film 118b is made of a water-soluble material and the mask film 119b is made of an inorganic film.

[0373] For example, the mask film 118b may be Alq ３ The mask film 119b may be an In-Ga-Zn oxide film, a silicon film, or a tungsten film.

[0374] By forming a water-soluble material as the mask film 118b on the layer 113B, even if the properties of the mask film 118b change during the manufacturing process, the light-emitting device 130B can be formed by removing the mask film 118b from the layer 113B. Furthermore, the mask film 118b exposed to plasma or the like during the manufacturing process can be removed. Furthermore, the mask film 118b can mitigate the effect of plasma or the like during the manufacturing process on the configuration located on the layer 101 side relative to the mask film 118b. Furthermore, the layer 113B can be protected from damage during the manufacturing process. As a result, a novel display device with excellent convenience, usefulness, and reliability can be provided.

[0375] The mask membrane 118b and the mask membrane 119b can each be made of a resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0376] For example, the mask film 118b can be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 119b can be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0377] As described in Embodiment 1, in the display device of one embodiment of the present invention, part of the mask film may remain as a mask layer.

[0378] Subsequently, a resist mask 190B is formed on the mask film 119b (FIG. 27B). The resist mask 190B can be formed by applying a photosensitive resin (photoresist) and then performing exposure and development.

[0379] The resist mask 190B can be made of a positive resist material or a negative resist material.

[0380] The resist mask 190B is provided in a position overlapping with the pixel electrode 111B. The resist mask 190B is preferably also provided in a position overlapping with the conductive layer 123. This can prevent the conductive layer 123 from being damaged during the manufacturing process of the display device. Note that the resist mask 190B does not necessarily have to be provided on the conductive layer 123.

[0381] Next, a part of the mask film 119b is removed using the resist mask 190B as a mask, to form a mask layer 119B (FIG. 28A). The mask layer 119B remains on the pixel electrode 111B and on the conductive layer 123.

[0382] Next, the resist mask 190B is removed (FIG. 28B). The resist mask 190B can be removed by, for example, ashing using oxygen plasma. Alternatively, the resist mask 190B can be removed by ashing using oxygen gas and CF ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ , or a noble gas such as He. Alternatively, the resist mask 190B can be removed by wet etching. At this time, the mask film 118b is located on the outermost surface and the film 113b is not exposed, so that damage to the film 113b can be suppressed in the process of removing the resist mask 190B. Furthermore, the range of options for the method of removing the resist mask 190B can be expanded.

[0383] Subsequently, the mask film 118b and the film 113b are partially removed using the mask layer 119B as a mask, thereby forming the mask layer 118B and the layer 113B (FIG. 29A).

[0384] The mask films 118b and 119b can be processed by wet etching or dry etching, respectively, and are preferably processed by anisotropic etching.

[0385] The use of wet etching can reduce damage to the film 113b when processing the mask films 118b and 119b compared to the use of dry etching. When using wet etching, it is preferable to use, for example, a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixed solution containing two or more of these.

[0386] In processing the mask film 119b, the film 113b is not exposed, and therefore the range of processing methods to be selected is wider than in processing the mask film 118b. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 119b, deterioration of the film 113b can be further suppressed.

[0387] When dry etching is used to process the mask film 118b, deterioration of the film 113b can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a noble gas such as He as the etching gas.

[0388] For example, when an aluminum oxide film formed by the ALD method is used as the mask film 118b, CHF ３ and He or CHF ３ and He and CH ４ The mask film 118b can be processed by dry etching using a diluted phosphoric acid. When an In-Ga-Zn oxide film formed by sputtering is used as the mask film 119b, the mask film 119b can be processed by wet etching using a diluted phosphoric acid. ４The mask film 119b can be processed by dry etching using diluted phosphoric acid and Ar. Alternatively, the mask film 119b can be processed by wet etching using diluted phosphoric acid. When a tungsten film formed by sputtering is used as the mask film 119b, SF ６ , C.F. ４ and O ２ , or CF ４ and Cl ２ and O ２ The mask film 119b can be processed by dry etching using the above method.

[0389] 29A, a stacked structure of the layer 113B, the mask layer 118B, and the mask layer 119B remains on the conductive film 137f, and a part of the conductive film 137f is exposed.

[0390] The conductive film 137f (later conductive layers 137R, 137G, and 135B) not only functions as an etching stopper when forming the layer 113B, but also functions as an optical adjustment layer. It is preferable to use a material with high resistance when forming the layer 113B, specifically, a material with a high etching selectivity with respect to the layer 113B, for the conductive film 137f. When processing the film 113b, the light-shielding layer 109 is covered with the conductive film 137f, and the surface of the light-shielding layer 109 is not exposed to etching gas or etching solution, etc. This prevents the thickness of the light-shielding layer 109 from becoming thin. The materials that can be used for the conductive film 137f are as described above.

[0391] The film 113b is preferably processed by anisotropic etching, particularly anisotropic dry etching, or alternatively, wet etching.

[0392] When the film 113b is processed by dry etching, the surface of the display device being manufactured is exposed to plasma. Using a metal film or an alloy film for one or both of the mask layers 118B and 119B is preferable because it can prevent damage caused by plasma to the remaining portion of the film 113b (the portion that will become the layer 113B) and therefore prevent deterioration of the layer 113B. In particular, it is preferable to use a metal film or an alloy film for the mask layer 119B, and a tungsten film or a molybdenum film can be suitably used.

[0393] When dry etching is used to process the film 113b, deterioration of the film 113b can be suppressed by not using a gas containing oxygen as an etching gas.

[0394] A gas containing oxygen can also be used as the etching gas. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can suppress damage to the film 113b. Furthermore, problems such as adhesion of reaction products that occur during etching can be suppressed.

[0395] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of the noble gases such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these and oxygen as the etching gas. Alternatively, oxygen gas can be used as the etching gas. Specifically, for example, H ２ and a gas containing Ar, or CF ４ A gas containing CF and He can be used as an etching gas. ４ A gas containing H, He, and oxygen can be used as the etching gas. ２A gas containing Ar and a gas containing oxygen can be used as the etching gas.

[0396] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source. Examples of the dry etching apparatus having a high-density plasma source include an inductively coupled plasma (ICP) etching apparatus. Alternatively, a capacitively coupled plasma (CCP) etching apparatus having parallel-plate electrodes may be used. The capacitively coupled plasma etching apparatus having parallel-plate electrodes may be configured to apply a high-frequency voltage to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a plurality of different high-frequency voltages to one of the parallel-plate electrodes. Alternatively, it may be configured to apply a high-frequency voltage of the same frequency to each of the parallel-plate electrodes. Alternatively, it may be configured to apply high-frequency voltages of different frequencies to each of the parallel-plate electrodes.

[0397] Because the conductive film 137f covers the pixel electrodes 111R, 111G, and 111B, subsequent processes can be performed without exposing the pixel electrodes 111R, 111G, and 111B. If the edges of the pixel electrodes 111R, 111G, and 111B are exposed, corrosion may occur during an etching process or other process. Products resulting from corrosion of the pixel electrodes 111R, 111G, and 111B may be unstable. For example, they may dissolve in solution during wet etching, or may scatter into the atmosphere during dry etching. If the products dissolve in solution or scatter into the atmosphere, they may adhere to the processed surface and the side surfaces of the layer 113B, adversely affecting the characteristics of the light-emitting device or forming leak paths between multiple light-emitting devices. Furthermore, in the region where the end of the pixel electrode 111B is exposed, the adhesion between the adjacent layers decreases, which may cause peeling of the layer 113B or the pixel electrode 111B. Therefore, by configuring the conductive film 137f to cover the pixel electrodes 111R, 111G, and 111B, it is possible to improve, for example, the yield and characteristics of the light-emitting device.

[0398] At the connection portion 140 and its vicinity, the laminated structure of the mask layer 118B and the mask layer 119B remains on the conductive layer 123.

[0399] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 119b, and part of the mask film 119b is removed using the resist mask 190B to form the mask layer 119B. Then, part of the film 113b is removed using the mask layer 119B as a hard mask to form the layer 113B. Therefore, it can be said that the layer 113B is formed by processing the film 113b by photolithography. Note that part of the film 113b can be removed using the resist mask 190B. Then, the resist mask 190B can be removed.

[0400] Subsequently, a film 113g that will become the layer 113G, a mask film 118g that will become the mask layer 118G, and a mask film 119g are formed on the conductive film 137f. The film 113g contains a light-emitting material that emits green light.

[0401] Subsequently, a resist mask 190G is formed on the mask film 119g (FIG. 29B).

[0402] The film 113g can be formed by a method similar to that used to form the film 113b. The materials and formation methods of the mask films 118g and 119g are the same as those applicable to the mask films 118b and 119b. The materials and formation methods of the resist mask 190G are the same as those applicable to the resist mask 190B. The resist mask 190G is provided at a position overlapping the pixel electrode 111G.

[0403] Subsequently, a part of the mask film 119g is removed using the resist mask 190G to form a mask layer 119G.

[0404] Subsequently, the resist mask 190G is removed (FIG. 30A).

[0405] Subsequently, the mask film 118g and a portion of the film 113g are removed using the mask layer 119G as a mask, thereby forming the mask layer 118G and the layer 113G (FIG. 30B).

[0406] Here, when processing the film 113g, the light-shielding layer 109 is covered with the conductive film 137f, and the surface of the light-shielding layer 109 is not exposed to etching gas, etching solution, etc. This makes it possible to prevent the thickness of the light-shielding layer 109 from becoming thin.

[0407] When processing the film 113g using a dry etching method, the surface of the display device being manufactured is exposed to plasma. Using a metal film or an alloy film for one or both of the mask layers 118B and 119B is preferable because it can prevent plasma damage to the layer 113B and suppress deterioration of the layer 113B. Furthermore, using a metal film or an alloy film for one or both of the mask layers 118G and 119G is preferable because it can prevent plasma damage to the remaining portion of the film 113g (the portion that will become the layer 113G) and suppress deterioration of the layer 113G. In particular, it is preferable to use a metal film or an alloy film as the mask layer 119G, and a tungsten film or a molybdenum film can be suitably used.

[0408] As a result, as shown in FIG. 30B, a stacked structure of the layer 113G, the mask layer 118G, and the mask layer 119G remains on the conductive film 137f.

[0409] Subsequently, a film 113r to become the layer 113R, a mask film 118r to become the mask layer 118R, and a mask film 119r are formed on the conductive film 137f (the film 113r contains a light-emitting material that emits red light.

[0410] Subsequently, a resist mask 190R is formed on the mask film 119r (FIG. 31A).

[0411] The film 113r can be formed by a method similar to that used to form the film 113b. The materials and forming methods of the mask films 118r and 119r are the same as those applicable to the mask films 118b and 119b. The materials and forming methods of the resist mask 190R are the same as those applicable to the resist mask 190B. The resist mask 190R is provided at a position overlapping the pixel electrode 111R.

[0412] Subsequently, a part of the mask film 119r is removed using the resist mask 190R to form a mask layer 119R.

[0413] Subsequently, the resist mask 190R is removed (FIG. 31B).

[0414] Subsequently, the mask film 118r and the film 113r are partially removed using the mask layer 119R as a mask, thereby forming the mask layer 118R and the layer 113R (FIG. 32A).

[0415] When processing the film 113r using a dry etching method, the surface of the display device being manufactured is exposed to plasma. Using a metal film or an alloy film for one or both of the mask layers 118B and 119B, and one or both of the mask layers 118G and 119G, respectively, is preferable because it can prevent plasma damage to the layers 113B and 113G and suppress deterioration of the layers 113B and 113G. Furthermore, using a metal film or an alloy film for one or both of the mask layers 118R and 119R is preferable because it can prevent plasma damage to the remaining portion of the film 113r (the portion that will become the layer 113R) and suppress deterioration of the layer 113R. In particular, it is preferable to use a metal film or an alloy film as the mask layer 119R, and a tungsten film or a molybdenum film can be suitably used.

[0416] As a result, as shown in FIG. 32A, a stacked structure of the layer 113R, the mask layer 118R, and the mask layer 119R remains on the conductive film 137f.

[0417] Note that the side surfaces of the layers 113B, 113G, and 113R are preferably perpendicular or substantially perpendicular to the surface where the layers are to be formed (here, the top surface of the conductive film 137f). For example, the angle between the surface where the layers are to be formed and the side surfaces is preferably 60 degrees to 90 degrees.

[0418] As described above, the distance between any two adjacent layers of the layers 113B, 113G, and 113R formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of any two adjacent layers of the layers 113B, 113G, and 113R. By narrowing the distance between the island-shaped EL layers in this manner, a display device with high definition and a large aperture ratio can be provided.

[0419] Next, it is preferable to remove mask layers 119B, 119G, and 119R ( FIG. 32B ). Depending on the subsequent process, portions of mask layers 118B, 118G, 118R, 119B, 119G, and 119R may remain in the display device. By removing mask layers 119B, 119G, and 119R at this stage, it is possible to prevent mask layers 119B, 119G, and 119R from remaining in the display device. For example, if a conductive material is used for mask layers 119B, 119G, and 119R, removing mask layers 119B, 119G, and 119R can suppress the generation of leakage current and the formation of capacitance due to the remaining mask layers 119B, 119G, and 119R.

[0420] Here, a manufacturing method in which the mask layers 119B, 119G, and 119R are removed will be described as an example, but a configuration in which parts of the mask layers 119B, 119G, and 119R are left may also be used. For example, if the mask layers 119B, 119G, and 119R contain a material that has the above-mentioned ultraviolet light blocking properties, proceeding to the next step without removing them is preferable because the island-shaped EL layer can be protected from ultraviolet light.

[0421] The mask layers 119B, 119G, and 119R can be removed using the same method as that used to form the mask layers 119B, 119G, and 119R. In particular, by using the wet etching method, damage to the layers 113B, 113G, and 113R can be reduced compared to when using the dry etching method when removing the mask layers 119B, 119G, and 119R.

[0422] When a metal film or an alloy film is used for the mask layers 119B, 119G, and 119R, the presence of the mask layers 119B, 119G, and 119R can prevent plasma damage to the EL layer. Therefore, the film can be processed using a dry etching method in the steps up to the removal of the mask layers 119B, 119G, and 119R. On the other hand, in the steps of removing the mask layers 119B, 119G, and 119R and in the steps thereafter, the film that prevents plasma damage to the EL layer is lost, so it is preferable to process the film using a method that does not use plasma, such as a wet etching method.

[0423] The mask layers 119B, 119G, and 119R can be removed by dissolving them in a solvent such as water or alcohol. Examples of alcohol include ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), and glycerin.

[0424] Next, portions of the conductive film 137f are removed using the mask layers 118B, 118G, and 118R as masks, to form the conductive layers 137R, 137G, 137B, and 137p ( FIG. 33A ). The conductive layers 137R, 137G, 137B, and 137p can be preferably formed by wet etching. Using the wet etching method can reduce damage to the layers 113B, 113G, and 113R when forming the conductive layers 137R, 137G, 137B, and 137p, compared to using dry etching.

[0425] After the conductive layers 137R, 137G, 137B, and 137p are formed, drying treatment can be performed to remove water contained in the layers 113B, 113G, and 113R and water adsorbed on the surfaces of the layers 113B, 113G, and 113R. For example, heat treatment can be performed in an inert gas atmosphere such as a nitrogen atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature.

[0426] Next, an insulating film 125f that will become the insulating layer 125 is formed so as to cover the light-shielding layer 109, the conductive layer 137G, the conductive layer 137B, the conductive layer 137R, the conductive layer 137p, the layer 113B, the layer 113G, the layer 113R, the mask layer 118B, the mask layer 118G, and the mask layer 118R (Figure 33B).

[0427] Thereafter, an insulating film 127f, which will become the insulating layer 127, is formed in contact with the upper surface of the insulating film 125f. Therefore, it is preferable that the upper surface of the insulating film 125f has high adhesion to the resin composition (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating film 127f. To improve this adhesion, it is preferable to hydrophobize (or increase the hydrophobicity of) the upper surface of the insulating film 125f by performing a surface treatment. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the insulating film 125f in this manner, the insulating film 127f can be formed with high adhesion.

[0428] Subsequently, an insulating film 127f is formed on the insulating film 125f (FIG. 34A).

[0429] The insulating films 125f and 127f are preferably formed by a formation method that causes less damage to the layers 113B, 113G, and 113R. In particular, since the insulating film 125f is formed in contact with the side surfaces of the layers 113B, 113G, and 113R, it is preferably formed by a formation method that causes less damage to the layers 113B, 113G, and 113R than the insulating film 127f.

[0430] The insulating films 125f and 127f are formed at a temperature lower than the heat-resistant temperatures of the layer 113B, the layer 113G, and the layer 113R, respectively. By increasing the substrate temperature during film formation, the insulating film 125f can have a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0431] The substrate temperature when forming the insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0432] As described above, in the display device of one embodiment of the present invention, a material with high heat resistance is used for the light-emitting device. Therefore, the substrate temperatures during the formation of the insulating films 125f and 127f can be set to 100° C. or higher, 120° C. or higher, or 140° C. or higher, respectively. For example, the higher the deposition temperature of an inorganic insulating film, the denser the film can be and the higher the barrier property it can have. Therefore, by depositing the insulating film 125f at such a temperature, damage to the layers 113B, 113G, and 113R can be further reduced, and the reliability of the light-emitting device can be improved.

[0433] The insulating film 125f is preferably formed to a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less, within the above substrate temperature range.

[0434] The insulating film 125f is preferably formed by, for example, an ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. For example, an aluminum oxide film is preferably formed as the insulating film 125f by the ALD method.

[0435] The insulating film 125f can also be formed by a sputtering method, a CVD method, or a PECVD method, which have a faster film formation rate than an ALD method, thereby enabling a highly reliable display device to be manufactured with high productivity.

[0436] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive resin, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0437] Heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The temperature of the heat treatment is set to be lower than the upper temperature limit of the layers 113B, 113G, and 113R. The substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and further preferably 70° C. or higher and 120° C. or lower. This allows the solvent contained in the insulating film 127f to be removed.

[0438] Next, visible light or ultraviolet light is irradiated onto a portion of the insulating film 127f to expose that portion. For example, when a positive photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto an area where the insulating layer 127 will not be formed in a later step. Note that the width of the insulating layer 127 can be controlled by the area to be exposed to light.

[0439] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0440] Subsequently, development is performed to form an insulating layer 127 ( FIG. 34B ). The insulating layer 127 is formed in the region surrounding the layer 113R, the region surrounding the layer 113G, and the region surrounding the layer 113B. When an acrylic resin is used for the insulating film 127f, it is preferable to use an alkaline solution as the developer, such as an aqueous solution of tetramethylammonium hydroxide (TMAH).

[0441] After development, a step of removing residues (so-called scum) remaining after development can be carried out. For example, the residues can be removed by ashing using oxygen plasma. After each of the development steps described below, a step of removing the residues can also be carried out.

[0442] Etching can also be performed to adjust the height of the surface of the insulating layer 127. The insulating layer 127 can be processed by ashing using oxygen plasma, for example.

[0443] After development, heat treatment (also referred to as post-baking) is preferably performed. Heat treatment can form tapered side surfaces of the insulating layer 127. The heat treatment is performed at a temperature lower than the heat resistance temperature of the EL layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 130° C. The heating atmosphere can be, for example, an air atmosphere or an inert gas atmosphere. The heating atmosphere can be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. A reduced-pressure atmosphere is preferable because drying can be performed at a lower temperature. The substrate temperature in this heat treatment step is preferably higher than that in the heat treatment (pre-baking) performed after the formation of the insulating film 127f. This can improve adhesion between the insulating layer 127 and the insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0444] Next, insulating film 125f, mask layer 118B, mask layer 118G, and mask layer 118R are partially removed using insulating layer 127 as a mask, thereby forming insulating layer 125, and openings are formed in mask layers 118B, 118G, and 118R, respectively, exposing the top surfaces of layers 113G, 113G, 113R, and conductive layer 137p ( FIG. 35A ).

[0445] The insulating film 125f, the mask layer 118B, the mask layer 118G, and the mask layer 118R can be processed by dry etching or wet etching. Note that it is preferable to use the same material as the mask layer 118B, the mask layer 118G, and the mask layer 118R for the insulating film 125f because the processing can be performed all at once.

[0446] When dry etching is used, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl４ , and CCl ４ The above-mentioned chlorine-based gases may be used alone or in combination of two or more thereof. Furthermore, the above-mentioned chlorine-based gases may be used alone or in combination of two or more thereof. By using dry etching, thin regions of the mask layers 118B, 118G, and 118R can be formed with good in-plane uniformity.

[0447] When dry etching is used, by-products generated by the dry etching may be deposited on the upper surface and side surfaces of the insulating layer 127. Therefore, the insulating layer 127 may contain components contained in the etching gas, components contained in the insulating film 125f, and components contained in the mask layers 118B, 118G, and 118R.

[0448] It is preferable to use a wet etching method for processing the insulating film 125f, the mask layer 118B, the mask layer 118G, and the mask layer 118R. By using the wet etching method, damage to the layer 113B, the layer 113G, and the layer 113R can be reduced compared to when using a dry etching method. For example, an alkaline solution can be used as an etchant for the wet etching. For example, an aqueous solution of tetramethylammonium hydroxide (TMAH), which is an alkaline solution, can be suitably used for wet etching of an aluminum oxide film.

[0449] As described above, by providing the insulating layer 127, the insulating layer 125, the mask layer 118B, the mask layer 118G, and the mask layer 118R, it is possible to prevent poor connection between the light-emitting devices due to disconnection of the common layer 114 and the common electrode 115 and an increase in electrical resistance due to a locally thin portion of the common layer 114 and the common electrode 115. As a result, the display quality of the display device of one embodiment of the present invention can be improved.

[0450] After exposing portions of the layers 113B, 113G, and 113R, further heat treatment can be performed. This heat treatment can remove water contained in the EL layer and water adsorbed to the surface of the EL layer. Furthermore, this heat treatment may change the shape of the insulating layer 127. Specifically, the insulating layer 127 may expand to cover at least one of the ends of the insulating layer 125, the ends of the mask layers 118B, 118G, and 118R, and the top surfaces of the layers 113B, 113G, and 113R. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 120° C. A reduced-pressure atmosphere is preferable because dehydration can be achieved at lower temperatures. However, the temperature range of the heat treatment is preferably set appropriately, taking into account the heat resistance temperature of the EL layer. In addition, when the heat resistance temperature of the EL layer is taken into consideration, a temperature of 70° C. or more and 120° C. or less is particularly suitable within the above temperature range.

[0451] Here, if the insulating layer 125 and the mask layer are etched together after post-baking, side etching may cause the insulating layer 125 and the mask layer below the edge of the insulating layer 127 to disappear, forming a cavity. Such a cavity may cause unevenness on the surface on which the common layer 114 and the common electrode 115 are formed, making it more likely that discontinuities will occur in the common layer 114 and the common electrode 115. Therefore, it is preferable to perform the etching of the insulating layer 125 and the mask layer separately, before and after post-baking.

[0452] Subsequently, the common layer 114 and the common electrode 115 are formed in this order on the insulating layer 127, the layer 113B, the layer 113G, and the layer 113R, and further the protective layer 131 is formed (FIG. 35B).

[0453] The common layer 114 can be formed by, for example, a vapor deposition method (including a vacuum deposition method), a transfer method, a printing method, an inkjet method, or a coating method.

[0454] The common electrode 115 can be formed by, for example, sputtering or vacuum deposition, or by stacking a film formed by deposition and a film formed by sputtering.

[0455] The protective layer 131 can be formed by, for example, vacuum deposition, sputtering, CVD, or ALD.

[0456] Subsequently, the substrate 120 is attached onto the protective layer 131 using the resin layer 122, whereby a display device can be manufactured (FIG. 12A).

[0457] As described above, in the manufacturing method of the display device of this embodiment, the island-shaped layers 113B, 113G, and 113R are formed by depositing a film over the entire surface and processing the film rather than using a fine metal mask. This allows the island-shaped layers to be formed with a uniform thickness. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even if the resolution or aperture ratio is high and the distance between subpixels is extremely short, the layers 113B, 113G, and 113R can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents unintended light emission due to crosstalk, and a display device with extremely high contrast can be realized.

[0458] Although an example in which the layers 113B, 113G, and 113R are formed in this order has been described, the order in which these layers are formed is not particularly limited.

[0459] By providing the insulating layer 127 having a tapered edge between adjacent island-shaped EL layers, it is possible to suppress the occurrence of a step during the formation of the common electrode 115 and to prevent the formation of a locally thin portion in the common electrode 115. This can suppress the occurrence of a connection failure due to the disconnected portion in the common layer 114 and the common electrode 115 and an increase in electrical resistance due to the locally thin portion. Therefore, the display device of one embodiment of the present invention can achieve both high definition and high display quality.

[0460] This embodiment mode can be combined with other embodiment modes as appropriate.

[0461] Embodiment 3 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS. 36 and 37. FIG.

[0462] [Pixel Layout] In this embodiment, pixel layouts different from that shown in FIG. 1A will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of sub-pixel arrangements include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0463] The top surface shape of the sub-pixels shown in the drawings in this embodiment corresponds to the top surface shape of the light-emitting region (or light-receiving region).

[0464] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0465] The layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the figure, and can also be arranged outside of the sub-pixels.

[0466] An S-stripe arrangement is applied to the pixel 110 shown in Fig. 36A. The pixel 110 shown in Fig. 36A is composed of three subpixels: a subpixel 110a, a subpixel 110b, and a subpixel 110c.

[0467] The pixel 110 shown in Figure 36B includes a subpixel 110a having a generally trapezoidal or triangular top surface shape with rounded corners, a subpixel 110b having a generally trapezoidal or triangular top surface shape with rounded corners, and a subpixel 110c having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110b has a larger light-emitting region than the subpixel 110a. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0468] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 36C. Fig. 36C shows an example in which the pixel 124a having the sub-pixels 110a and 110b and the pixel 124b having the sub-pixels 110b and 110c are arranged alternately.

[0469] The pixels 124a and 124b shown in Figures 36D to 36F are arranged in a delta arrangement. The pixel 124a has two subpixels (subpixel 110a and subpixel 110b) in the top row (first row) and one subpixel (subpixel 110c) in the bottom row (second row). The pixel 124b has one subpixel (subpixel 110c) in the top row (first row) and two subpixels (subpixel 110a and subpixel 110b) in the bottom row (second row).

[0470] Figure 36D is an example in which each sub-pixel has an approximately rectangular top surface shape with rounded corners, Figure 36E is an example in which each sub-pixel has a circular top surface shape, and Figure 36F is an example in which each sub-pixel has an approximately hexagonal top surface shape with rounded corners.

[0471] In Figure 36F, each subpixel is arranged inside a densely arranged hexagonal region. When focusing on one subpixel, it is arranged so that it is surrounded by six other subpixels. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110a, three subpixels 110b and three subpixels 110c are arranged alternately so as to surround it.

[0472] 36G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110a and 110b, or subpixels 110b and 110c) are misaligned.

[0473] 36A to 36G, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110b can be the subpixel R that emits red light, and the subpixel 110a can be the subpixel G that emits green light.

[0474] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This reduces the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, it is likely to have rounded corners. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0475] Furthermore, in a manufacturing method of a display device according to one embodiment of the present invention, the EL layer is processed into an island shape using a resist mask. The resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, depending on the heat resistance temperature of the material for the EL layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that deviates from the desired shape during processing. As a result, the top surface shape of the EL layer may become a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the EL layer.

[0476] In order to form the top surface of the EL layer into a desired shape, a technique for correcting the mask pattern in advance (OPC (Optical Proximity Correction) technique) can be used so that the design pattern and the transfer pattern coincide with each other. Specifically, the OPC technique adds a correction pattern to the corners of figures on the mask pattern.

[0477] As shown in Figures 37A to 37I, a pixel can be configured to have four types of sub-pixels.

[0478] The pixels 110 shown in FIGS. 37A to 37C are arranged in a stripe pattern.

[0479] Figure 37A shows an example in which each subpixel has a rectangular top surface shape, Figure 37B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and Figure 37C shows an example in which each subpixel has an elliptical top surface shape.

[0480] The pixels 110 shown in FIGS. 37D to 37F are arranged in a matrix.

[0481] Figure 37D is an example in which each subpixel has a square top surface shape, Figure 37E is an example in which each subpixel has an approximately square top surface shape with rounded corners, and Figure 37F is an example in which each subpixel has a circular top surface shape.

[0482] 37G and 37H show an example in which one pixel 110 is configured in two rows and three columns.

[0483] 37G has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and one subpixel (subpixel 110d) in the bottom row (second row). In other words, pixel 110 has subpixel 110a in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110d across these three columns.

[0484] The pixel 110 shown in FIG. 37H has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and three subpixels 110d in the bottom row (second row). In other words, the pixel 110 has subpixels 110a and 110d in the left column (first column), subpixels 110b and 110d in the center column (second column), and subpixels 110c and 110d in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 37H, it is possible to efficiently remove dust and other particles that may occur during the manufacturing process. Therefore, a display device with high display quality can be provided.

[0485] FIG. 37I shows an example in which one pixel 110 is configured in three rows and two columns.

[0486] 37I has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across the first and second rows, and one subpixel (subpixel 110d) in the bottom row (third row). In other words, pixel 110 has subpixels 110a and 110b in the left column (first column), subpixel 110c in the right column (second column), and subpixel 110d across these two columns.

[0487] The pixel 110 shown in FIGS. 37A to 37I is composed of four subpixels: a subpixel 110a, a subpixel 110b, a subpixel 110c, and a subpixel 110d.

[0488] The subpixels 110a, 110b, 110c, and 110d may each have a light-emitting device that emits a different color light, such as subpixels of four colors R, G, B, and white (W), subpixels of four colors R, G, B, and Y, or subpixels of R, G, B, and infrared (IR).

[0489] 37A to 37I , it is preferable that, for example, the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be any one of the subpixels W that emit white light, Y that emit yellow light, and IR that emit near-infrared light. With such a configuration, the pixel 110 shown in FIGS. 37G and 37H has a stripe layout of R, G, and B, thereby improving display quality. Furthermore, the pixel 110 shown in FIG. 37I has a so-called S-stripe layout of R, G, and B, thereby improving display quality.

[0490] The pixel 110 can have sub-pixels that have light receiving devices.

[0491] In each pixel 110 shown in FIGS. 37A to 37I, any one of the subpixels 110a to 110d can be a subpixel having a light-receiving device.

[0492] 37A to 37I , it is preferable that, for example, the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, the subpixel 110c be the subpixel B that emits blue light, and the subpixel 110d be the subpixel S that has a light-receiving device. With this configuration, the pixels 110 shown in FIGS. 37G and 37H have a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 37I has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0493] The wavelength of light detected by the subpixel S having the light receiving device is not particularly limited. The subpixel S can be configured to detect either or both of visible light and infrared light.

[0494] As shown in Figures 37J and 37K, a pixel can be configured to have five types of sub-pixels.

[0495] FIG. 37J shows an example in which one pixel 110 is configured in two rows and three columns.

[0496] 37J has three subpixels (subpixels 110a, 110b, and 110c) in the top row (first row) and two subpixels (subpixels 110d and 110e) in the bottom row (second row). In other words, pixel 110 has subpixels 110a and 110d in the left column (first column), subpixel 110b in the center column (second column), subpixel 110c in the right column (third column), and subpixel 110e from the second column to the third column.

[0497] FIG. 37K shows an example in which one pixel 110 is configured in three rows and two columns.

[0498] 37K has subpixel 110a in the top row (first row), subpixel 110b in the middle row (second row), subpixel 110c across the first and second rows, and two subpixels (subpixels 110d and 110e) in the bottom row (third row). In other words, pixel 110 has subpixels 110a, 110b, and 110d in the left column (first column), and subpixels 110c and 110e in the right column (second column).

[0499] 37J and 37K, it is preferable that the subpixel 110a be the subpixel R that emits red light, the subpixel 110b be the subpixel G that emits green light, and the subpixel 110c be the subpixel B that emits blue light. With this configuration, the pixel 110 shown in FIG. 37J has a stripe layout of R, G, and B, which can improve display quality. Furthermore, the pixel 110 shown in FIG. 37K has a so-called S-stripe layout of R, G, and B, which can improve display quality.

[0500] 37J and 37K, it is preferable to use a subpixel S having a light-receiving device in at least one of the subpixels 110d and 110e. When a light-receiving device is used in both the subpixels 110d and 110e, the configurations of the light-receiving devices may be different from each other. For example, the wavelength ranges of light detected may be at least partially different from each other. Specifically, one of the subpixels 110d and 110e may have a light-receiving device that mainly detects visible light, and the other may have a light-receiving device that mainly detects infrared light.

[0501] 37J and 37K, it is preferable that one of the subpixels 110d and 110e is a subpixel S having a light-receiving device, and the other is a subpixel having a light-emitting device that can be used as a light source. For example, it is preferable that one of the subpixels 110d and 110e is a subpixel IR that emits infrared light, and the other is a subpixel S having a light-receiving device that detects infrared light.

[0502] In a pixel having sub-pixels R, G, B, IR, and S, an image can be displayed using the sub-pixels R, G, and B, while the sub-pixel IR can be used as a light source to detect reflected infrared light emitted by the sub-pixel IR at the sub-pixel S.

[0503] As described above, the display device of one embodiment of the present invention can employ various layouts for a pixel having a subpixel including a light-emitting device. Furthermore, the display device of one embodiment of the present invention can employ a pixel having both a light-emitting device and a light-receiving device. In this case, various layouts can also be employed.

[0504] This embodiment mode can be combined with other embodiment modes as appropriate.

[0505] Embodiment 4 In this embodiment, a display device of one embodiment of the present invention will be described with reference to FIGS.

[0506] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type AR device.

[0507] The display device of this embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of this embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0508] 38A shows a perspective view of a display module 280. The display module 280 includes a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B to 100F described below.

[0509] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0510] 38B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0511] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 38B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 38B shows an example in which the pixel 284a has a configuration similar to that of the pixel 110 shown in Fig. 1A.

[0512] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0513] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a source signal is input to the source. This realizes an active matrix display device.

[0514] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0515] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. In addition, an IC can be mounted on the FPC 290.

[0516] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are provided overlapping below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20,000 ppi or less, or 30,000 ppi or less.

[0517] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even when the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small displays. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0518] Display Device 100A A display device 100A shown in FIG. 39 includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310. The display device 100A shown in FIG.

[0519] 38A and 38B. The laminated structure from the substrate 301 to the insulating layer 255c corresponds to the layer 101 in the first embodiment.

[0520] The transistor 310 has a channel formation region in a substrate 301. The substrate 301 can be a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as one of a source and a drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0521] An isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0522] An insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0523] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0524] The use of a material with low light transmittance for the conductive layer 241 and the conductive layer 245 can prevent light from entering the transistor 310. When the conductive layer 241 and the conductive layer 245 function as light-shielding layers in addition to the light-shielding layer 109, fluctuations in the electrical characteristics of the transistor 310 are suppressed, and a highly reliable display device can be obtained. It is more preferable that one or both of the conductive layer 241 and the conductive layer 245 have a region overlapping with the transistor 310 (particularly, a channel formation region).

[0525] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0526] Note that at least one of the conductive layers included in the layer 101 preferably includes a conductive layer surrounding the outside of the display portion 281 (or the pixel portion 284). The conductive layer may also be called a guard ring. By providing the conductive layer, it is possible to prevent elements such as transistors and light-emitting devices from being damaged by a high voltage applied to these elements due to charging caused by electrostatic discharge (ESD) or a process using plasma.

[0527] An insulating layer 255a is provided covering the capacitor 240, an insulating layer 255b is provided on the insulating layer 255a, and an insulating layer 255c is provided on the insulating layer 255b. Conductive layers 105R, 105G, and 105G are provided on the insulating layer 255c. Layers 107R, 107G, and 107B are provided on the conductive layers 105R, 105G, and 105G. Light-emitting devices 130R, 130G, and 130B are provided on the layers 107R, 107G, and 107B. A light-shielding layer 109 is provided between adjacent pixel electrodes 111.

[0528] FIG. 39 shows an example in which the configurations of the pixel electrodes 111R, 111G, 111B, the conductive layers 105R, 105G, 105B, the layers 107R, 107G, and 107B shown in FIG. 9A are applied.

[0529] The insulating layers 255a, 255b, and 255c can each preferably be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an oxynitride insulating film, or a nitride oxide insulating film. The insulating layers 255a and 255c are each preferably an insulating oxide film or an oxynitride insulating film. The insulating layers 255a and 255c can each preferably be, for example, one or more of a silicon oxide film, a silicon oxynitride film, and an aluminum oxide film. The insulating layer 255b is preferably a nitride insulating film or a nitride oxide insulating film. The insulating layer 255b can preferably be, for example, one or more of a silicon nitride film and a silicon nitride oxide film. More specifically, the insulating layers 255a and 255c can each preferably be silicon oxide films, and the insulating layer 255b can preferably be a silicon nitride film. The insulating layer 255b preferably has a function as an etching protective film.

[0530] A mask layer 118R is located on layer 113R of light-emitting device 130R, a mask layer 118G is located on layer 113G of light-emitting device 130G, and a mask layer 118B is located on layer 113B of light-emitting device 130B.

[0531] The conductive layer 105R, the conductive layer 105G, and the conductive layer 105B are electrically connected to one of the source and drain of the transistor 310 via a plug 256 embedded in the insulating layer 243, the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 255c and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0532] A protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices to the substrate 120, refer to Embodiment 1. The substrate 120 corresponds to the substrate 292 in FIG. 38A .

[0533] 40A and 40B show an example of a display device having a light-emitting device 130R, a light-emitting device 130G, and a light-receiving device 150. Although not shown, the display device also has a light-emitting device 130B. In FIG. 40B, layers below an insulating layer 255a are omitted. The display device 100A shown in FIGS. 40A and 40B can be applied with any of the configurations of the layer 101 shown in FIG. 39 and FIGS. 41 to 45, for example.

[0534] The light-receiving device 150 includes a pixel electrode 111S, a conductive layer 135S on the pixel electrode 111S, a conductive layer 137S on the conductive layer 135S, a layer 113S on the conductive layer 137S, a common layer 114 on the layer 113S, and a common electrode 115 on the common layer 114. The conductive layer 135S can be formed in the same process as the conductive layers 135R, 135G, and 135B. The conductive layer 137S can be formed in the same process as the conductive layers 137R, 137G, and 137B. For details of the display device including the light-receiving device, refer to Embodiments 1 and 6.

[0535] As shown in Figure 40B, the display device may be provided with a lens array 133. The lens array 133 may be provided over one or both of the light-emitting device and the light-receiving device.

[0536] 40B shows an example in which a lens array 133 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-receiving device 150 via a protective layer 131. By forming the lens array 133 directly on the substrate on which the light-emitting devices (and light-receiving devices) are formed, it is possible to improve the accuracy of alignment between the light-emitting devices or the light-receiving devices and the lens array.

[0537] In FIG. 40B, light emitted from the light emitting device passes through lens array 133 and is extracted to the outside of the display device.

[0538] The lens array 133 can be provided on the substrate 120 and attached onto the protective layer 131 by the resin layer 122. By providing the lens array 133 on the substrate 120, the temperature of the heat treatment in the process of forming the lens array 133 can be increased.

[0539] 41 has a configuration in which a transistor 310A and a transistor 310B, each having a channel formed in a semiconductor substrate, are stacked. Note that in the following description of the display device, descriptions of parts that are the same as those of the display device described above may be omitted.

[0540] The display device 100B has a configuration in which a substrate 301B on which a transistor 310B, a capacitor 240, and a light-emitting device are provided and a substrate 301A on which a transistor 310A is provided are bonded together.

[0541] Here, it is preferable to provide an insulating layer 345 on the lower surface of the substrate 301B. It is also preferable to provide an insulating layer 346 on the insulating layer 261 provided on the substrate 301A. The insulating layers 345 and 346 are insulating layers that function as protective layers and can suppress the diffusion of impurities into the substrates 301B and 301A. The insulating layers 345 and 346 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0542] The substrate 301B is provided with a plug 343 that penetrates the substrate 301B and an insulating layer 345. Here, it is preferable to provide an insulating layer 344 to cover the side surface of the plug 343. The insulating layer 344 is an insulating layer that functions as a protective layer and can suppress the diffusion of impurities into the substrate 301B. The insulating layer 344 can be made of an inorganic insulating film that can be used for the protective layer 131.

[0543] A conductive layer 342 is provided on the back surface (surface opposite to the substrate 120 side) of the substrate 301B, below the insulating layer 345. The conductive layer 342 is preferably provided so as to be embedded in the insulating layer 335. The lower surfaces of the conductive layer 342 and the insulating layer 335 are preferably flattened. Here, the conductive layer 342 is electrically connected to the plug 343.

[0544] On the other hand, in the substrate 301A, a conductive layer 341 is provided on an insulating layer 346. The conductive layer 341 is preferably provided so as to be embedded in the insulating layer 336. In addition, the upper surfaces of the conductive layer 341 and the insulating layer 336 are preferably flattened.

[0545] The substrate 301A and the substrate 301B are electrically connected by bonding the conductive layer 341 and the conductive layer 342. Here, by improving the flatness of the surface formed by the conductive layer 342 and the insulating layer 335 and the surface formed by the conductive layer 341 and the insulating layer 336, the conductive layer 341 and the conductive layer 342 can be favorably bonded to each other.

[0546] It is preferable that the conductive layers 341 and 342 be made of the same conductive material. For example, a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film containing the above elements (titanium nitride film, molybdenum nitride film, tungsten nitride film), etc., can be used. In particular, it is preferable that copper be used for the conductive layers 341 and 342. This allows the application of Cu-Cu direct bonding technology (technology that achieves electrical conductivity by connecting Cu (copper) pads together).

[0547] [Display Device 100C] A display device 100C shown in FIG. 42 has a configuration in which a conductive layer 341 and a conductive layer 342 are joined via a bump 347.

[0548] 42 , by providing a bump 347 between the conductive layer 341 and the conductive layer 342, the conductive layer 341 and the conductive layer 342 can be electrically connected. The bump 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Alternatively, for example, solder may be used as the bump 347. An adhesive layer 348 can be provided between the insulating layer 345 and the insulating layer 346. When the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.

[0549] [Display Device 100D] A display device 100D shown in FIG. 43 differs from the display device 100A mainly in the configuration of the transistors.

[0550] The transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is used for a semiconductor layer in which a channel is formed.

[0551] The transistor 320 includes a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .

[0552] 38A and 38B. The layered structure from the substrate 331 to the insulating layer 255c corresponds to the layer 101 in Embodiment 1. The substrate 331 can be an insulating substrate or a semiconductor substrate.

[0553] An insulating layer 332 is provided over a substrate 331. The insulating layer 332 functions as a barrier layer that prevents impurities (for example, water and hydrogen) from diffusing from the substrate 331 to the transistor 320 and prevents oxygen from being released from the semiconductor layer 321 toward the insulating layer 332. The insulating layer 332 can be, for example, a film through which hydrogen or oxygen is less likely to diffuse than a silicon oxide film, such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film.

[0554] A conductive layer 327 is provided over the insulating layer 332, and an insulating layer 326 is provided to cover the conductive layer 327. The conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer. An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321. The top surface of the insulating layer 326 is preferably planarized.

[0555] The semiconductor layer 321 is provided over the insulating layer 326. The semiconductor layer 321 preferably includes a metal oxide (oxide semiconductor) film having semiconductor characteristics. A pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.

[0556] An insulating layer 328 is provided to cover top surfaces and side surfaces of the pair of conductive layers 325 and side surfaces of the semiconductor layer 321, and an insulating layer 264 is provided over the insulating layer 328. The insulating layer 328 functions as a barrier layer that prevents impurities (for example, water and hydrogen) from diffusing from the insulating layer 264 or the like to the semiconductor layer 321 and prevents oxygen from being released from the semiconductor layer 321. The insulating layer 328 can be an insulating film similar to the insulating layer 332.

[0557] Openings reaching the semiconductor layer 321 are provided in the insulating layer 328 and the insulating layer 264. Inside the openings, an insulating layer 323 and a conductive layer 324 are buried in contact with side surfaces of the insulating layer 264, the insulating layer 328, and the conductive layer 325 and a top surface of the semiconductor layer 321. The conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.

[0558] The top surfaces of the conductive layer 324, the insulating layer 323, and the insulating layer 264 are planarized so that their heights are the same or approximately the same, and insulating layers 329 and 265 are provided to cover them.

[0559] The insulating layer 264 and the insulating layer 265 function as interlayer insulating layers. The insulating layer 329 functions as a barrier layer that prevents impurities (e.g., water and hydrogen) from diffusing from the insulating layer 265 or the like to the transistor 320. The insulating layer 329 can be formed using an insulating film similar to the insulating layer 328 and the insulating layer 332.

[0560] A plug 274 electrically connected to one of the pair of conductive layers 325 is provided to be embedded in the insulating layer 265, the insulating layer 329, and the insulating layer 264. Here, the plug 274 preferably includes a conductive layer 274a covering the side surfaces of the openings of the insulating layer 265, the insulating layer 329, the insulating layer 264, and the insulating layer 328 and part of the top surface of the conductive layer 325, and a conductive layer 274b in contact with the top surface of the conductive layer 274a. In this case, the conductive layer 274a is preferably made of a conductive material through which hydrogen and oxygen do not easily diffuse.

[0561] [Display Device 100E] A display device 100E illustrated in FIG. 44 has a stacked structure of a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed.

[0562] The description of the display device 100D can be referred to for the transistor 320A, the transistor 320B, and the peripheral configuration thereof.

[0563] Although two transistors including an oxide semiconductor are stacked here, the present invention is not limited to this structure, and for example, three or more transistors may be stacked.

[0564] [Display Device 100F] A display device 100F shown in FIG. 45 has a stacked structure of a transistor 310 in which a channel is formed in a substrate 301 and a transistor 320 in which a channel is formed and a semiconductor layer containing metal oxide.

[0565] An insulating layer 261 is provided to cover the transistor 310, and a conductive layer 251 is provided over the insulating layer 261. An insulating layer 262 is provided to cover the conductive layer 251, and a conductive layer 252 is provided over the insulating layer 262. The conductive layers 251 and 252 each function as wirings. An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252, and the transistor 320 is provided over the insulating layer 332. An insulating layer 265 is provided to cover the transistor 320, and a capacitor 240 is provided over the insulating layer 265. The capacitor 240 and the transistor 320 are electrically connected by a plug 274.

[0566] The transistor 320 can be used as a transistor that forms a pixel circuit. The transistor 310 can be used as a transistor that forms a pixel circuit or a driver circuit (gate line driver circuit, source line driver circuit) that drives the pixel circuit. The transistors 310 and 320 can be used as transistors that form various circuits such as an arithmetic circuit or a memory circuit.

[0567] By using this configuration, not only pixel circuits but also driving circuits etc. can be formed directly below the light-emitting device, making it possible to make the display device smaller than when driving circuits are provided around the periphery of the display area.

[0568] [Display Device 100G] FIG. 46 shows a perspective view of the display device 100G, and FIG. 47A shows a cross-sectional view of the display device 100G.

[0569] The display device 100G has a configuration in which a substrate 152 and a substrate 151 are bonded together. In Fig. 46, the substrate 152 is indicated by a dashed line.

[0570] The display device 100G includes a display portion 162, a connection portion 140, a circuit 164, wiring 165, and the like. Fig. 46 shows an example in which an IC 173 and an FPC 172 are mounted on the display device 100G. Therefore, the configuration shown in Fig. 46 can also be said to be a display module including the display device 100G, an IC (integrated circuit), and an FPC.

[0571] The connection portion 140 is provided on the outside of the display portion 162. The connection portion 140 can be provided along one or more sides of the display portion 162. There can be one or more connection portions 140. FIG. 46 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion 162. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0572] The circuit 164 can be, for example, a scanning line driver circuit.

[0573] The wiring 165 has a function of supplying signals and power to the display portion 162 and the circuit 164. The signals and power are input to the wiring 165 from the outside via the FPC 172 or input to the wiring 165 from the IC 173.

[0574] 46 shows an example in which an IC 173 is provided on a substrate 151 by a chip-on-glass (COG) method or a chip-on-film (COF) method. The IC 173 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100G and the display module may also be configured without an IC. The IC may also be mounted on an FPC by a COF method or the like.

[0575] Figure 47A shows an example of a cross section of the display device 100G when a portion of the area including the FPC 172, a portion of the circuit 164, a portion of the display unit 162, a portion of the connection portion 140, and a portion of the area including the end portion are cut away.

[0576] The display device 100G shown in Figure 47A has, between a substrate 151 and a substrate 152, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0577] 47A shows an example in which the structures of the pixel electrode 111R, pixel electrode 111G, pixel electrode 111B, conductive layer 105R, conductive layer 105G, conductive layer 105B, layer 107R, layer 107G, layer 107B, conductive layer 135R, conductive layer 135G, conductive layer 135B, conductive layer 137R, conductive layer 137G, and conductive layer 137B shown in FIG. 12A are applied.

[0578] The conductive layer 105R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214, the insulating layer 215, and the insulating layer 213. A layer 107R is provided over the conductive layer 105R, and a pixel electrode 111R is provided to cover the conductive layer 105R and the layer 107R. The conductive layer 105R has a recess at a position overlapping with the opening provided in the insulating layer 214, the insulating layer 215, and the insulating layer 213. The recess is filled with the layer 107R. The same applies to the pixel electrode 111G, the conductive layer 105G, the layer 107G, the pixel electrode 111B, the conductive layer 105B, and the layer 107B, and detailed description thereof will be omitted.

[0579] A light-shielding layer 109 is provided between adjacent pixel electrodes 111. It is also preferable to provide the light-shielding layer 109 in the circuit 164. By providing the light-shielding layer 109 in the circuit 164, external light and light emitted from the light-emitting device can be prevented from entering a transistor (here, the transistor 201) included in the circuit 164, and fluctuations in the electrical characteristics of the transistor due to light can be suppressed. Therefore, the circuit 164 (for example, a scanning line driver circuit) can be made highly reliable, and a display device can be made highly reliable.

[0580] Part of the top surface and side surfaces of layers 113B, 113G, and 113R are covered with insulating layers 125 and 127, respectively. A mask layer 118B is located between layer 113B and insulating layer 125. Furthermore, a mask layer 118G is located between layer 113G and insulating layer 125, and a mask layer 118R is located between layer 113R and insulating layer 125. A common layer 114 is provided on layers 113B, 113G, 113R, and insulating layers 125 and 127, and a common electrode 115 is provided on common layer 114. The common layer 114 and the common electrode 115 are each a continuous film provided in common to a plurality of light-emitting devices.

[0581] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 152 are bonded via an adhesive layer 142. A light-shielding layer 117 is provided on the substrate 152. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting devices. In FIG. 47A , the space between the substrate 152 and the substrate 151 is filled with the adhesive layer 142, thereby applying a solid sealing structure. Alternatively, the space can be filled with an inert gas (such as nitrogen or argon), thereby applying a hollow sealing structure. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0582] The protective layer 131 is preferably provided in at least the display portion 162 and is provided so as to cover the entire display portion 162. The protective layer 131 is preferably provided so as to cover not only the display portion 162 but also the connection portion 140 and the circuit 164. The protective layer 131 is preferably provided up to the edge of the display device 100G. On the other hand, in the connection portion 204, the FPC 172 and the conductive layer 166 are electrically connected to each other, so that a portion where the protective layer 131 is not provided is generated.

[0583] A connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap. In the connection portion 204, the wiring 165 is electrically connected to the FPC 172 via the conductive layer 105q, the conductive layer 166, the conductive layer 135q, the conductive layer 137q, and the connection layer 242. The conductive layer 105q can be formed, for example, in the same process as the conductive layer 105R, the conductive layer 105G, and the conductive layer 105B. The conductive layer 166 can be formed, for example, in the same process as the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B. A layer 107q is provided between the conductive layer 105q and the conductive layer 166. The layer 107q can be formed, for example, in the same process as the layer 107R, the layer 107G, and the layer 107B. The conductive layer 166 can be formed, for example, in the same process as the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B. The conductive layer 135q can be formed, for example, in the same process as the conductive layers 135R, 135G, and 135B. The conductive layer 137q can be formed, for example, in the same process as the conductive layers 137R, 137G, and 137B. The conductive layer 137q is exposed on the upper surface of the connection portion 204. This allows the connection portion 204 and the FPC 172 to be electrically connected via the connection layer 242.

[0584] For example, after the protective layer 131 is formed over the entire surface of the display device 100G, a region of the protective layer 131 that overlaps with the conductive layer 137q can be removed using a mask, thereby exposing the conductive layer 137q.

[0585] A laminated structure of at least one organic layer and a conductive layer may be provided on the conductive layer 137q, and the protective layer 131 may be provided on the laminated structure. A peeling initiation point (a portion that triggers peeling) may then be formed on the laminated structure using a laser or a sharp blade (e.g., a needle or cutter), selectively removing the laminated structure and the protective layer 131 thereon to expose the conductive layer 137q. For example, the protective layer 131 can be selectively removed by pressing an adhesive roller against the substrate 151 and moving the roller relative to the substrate while rotating. Alternatively, adhesive tape may be attached to the substrate 151 and peeled off. Because of poor adhesion between the organic layer and the conductive layer, or between the organic layers themselves, separation occurs at the interface between the organic layer and the conductive layer or within the organic layer. This allows selective removal of the region of the protective layer 131 that overlaps with the conductive layer 137q. If any organic layer remains on the conductive layer 137q, it can be removed using an organic solvent or the like.

[0586] The organic layer can be, for example, at least one organic layer (a layer functioning as a light-emitting layer, a carrier blocking layer, a carrier transport layer, or a carrier injection layer) used in any of the layers 113B, 113G, and 113R. The organic layer can be formed simultaneously with the formation of any of the layers 113B, 113G, and 113R, or can be provided separately. The conductive layer can be formed in the same process and with the same material as the common electrode 115. For example, it is preferable to form an ITO film as the common electrode 115 and the conductive layer. Note that when a stacked structure is used for the common electrode 115, at least one of the layers constituting the common electrode 115 is provided as the conductive layer.

[0587] The upper surface of the conductive layer 137q may be covered with a mask to prevent the protective layer 131 from being formed on the conductive layer 137q. For example, a metal mask (area metal mask) or an adhesive or adhesive tape or film may be used as the mask. The protective layer 131 is formed with the mask in place, and then the mask is removed, so that the conductive layer 137q remains exposed even after the protective layer 131 is formed.

[0588] Using such a method, a region where the protective layer 131 is not provided can be formed in the connection portion 204, and the conductive layer 137q and the FPC 172 can be electrically connected to each other in this region via the connection layer 242.

[0589] Note that although the structure in which the conductive layer 135q and the conductive layer 137q are provided in the connection portion 204 is shown here, one embodiment of the present invention is not limited to this. A structure in which one or both of the conductive layer 135q and the conductive layer 137q are not provided in the connection portion 204 may also be used. When neither the conductive layer 135q nor the conductive layer 137q is provided in the connection portion 204, the conductive layer 166 can be exposed on the top surface of the connection portion 204 and can be in contact with the connection layer 242.

[0590] The display device 100G is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 152. The substrate 152 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 115) contains a material that transmits visible light.

[0591] The laminated structure from the substrate 151 to the insulating layer 214 corresponds to the layer 101 in the first embodiment.

[0592] The transistor 201 and the transistor 205 are both formed over a substrate 151. These transistors can be formed in the same process.

[0593] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 151 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each can be a single layer or two or more layers.

[0594] At least one insulating layer covering the transistor is preferably made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the display device.

[0595] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of inorganic insulating films that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Examples of films that can be used include a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film. Two or more of the above insulating films can also be stacked.

[0596] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarization layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during the formation of the conductive layer 105R, pixel electrode 111R, conductive layer 135R, or the like. Alternatively, recesses may be formed in the insulating layer 214 during the processing of the conductive layer 105R, pixel electrode 111R, conductive layer 135R, or the like.

[0597] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0598] The structure of the transistor included in the display device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0599] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The transistors can be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor can be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0600] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor, a single-crystal semiconductor, and a semiconductor having crystallinity other than a single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a single-crystal semiconductor or a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0601] The semiconductor layer of the transistor preferably includes a metal oxide (oxide semiconductor). That is, the display device of this embodiment preferably includes a transistor using a metal oxide for a channel formation region (hereinafter referred to as an OS transistor).

[0602] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS and nanocrystalline (nc)-OS.

[0603] Alternatively, a transistor using silicon for a channel formation region (Si transistor) can be used. In particular, a transistor having low-temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) can be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0604] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as source driver circuits) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the display device and reduces component and mounting costs.

[0605] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current (also referred to as off-state current) in an off state and can hold charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a display device.

[0606] To increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain breakdown voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in the pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0607] When a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a larger number of gray levels to be displayed in the pixel circuit.

[0608] In terms of the saturation of the current that flows when a transistor operates in the saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of the EL device vary. In other words, when an OS transistor operates in the saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0609] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0610] Examples of metal oxides used in the semiconductor layer include indium ...

Claims

A display device having a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-shielding layer. The first light-emitting device has a first pixel electrode, a first EL layer on the first pixel electrode, and a common electrode on the first EL layer. The second light-emitting device has a second pixel electrode, a second EL layer on the second pixel electrode, and the common electrode on the second EL layer. The first layer is located on the first conductive layer. The first pixel electrode is in contact with the upper surface and side surface of the first layer and the upper surface of the first conductive layer. The second layer is located on the second conductive layer. The second pixel electrode is in contact with the upper surface and side surface of the second layer and the upper surface of the second conductive layer. The light-shielding layer has a portion located between the first pixel electrode and the second pixel electrode. 　 In claim 1, An end portion of the first EL layer is in contact with the upper surface of the light-shielding layer. An end portion of the second EL layer is in contact with the upper surface of the light-shielding layer. 　 A display device having a first light-emitting device, a second light-emitting device, a first conductive layer, a second conductive layer, a first layer, a second layer, and a light-shielding layer. The first light-emitting device has a first pixel electrode, a third conductive layer on the first pixel electrode, a first EL layer on the third conductive layer, and a common electrode on the first EL layer. The second light-emitting device has a second pixel electrode, a fourth conductive layer on the second pixel electrode, a second EL layer on the fourth conductive layer, and the common electrode on the second EL layer. The first layer is located on the first conductive layer. The first pixel electrode is in contact with the upper surface and side surface of the first layer and the upper surface of the first conductive layer. The second layer is located on the second conductive layer. The second pixel electrode is in contact with the upper surface and side surface of the second layer and the upper surface of the second conductive layer. The light-shielding layer has a region located between the first pixel electrode and the second pixel electrode. An end portion of the third conductive layer is in contact with the upper surface of the light-shielding layer. An end portion of the fourth conductive layer is in contact with the upper surface of the light-shielding layer. 　 In claim 3, Each of the third conductive layer and the fourth conductive layer has a metal oxide. 　 In claim 3, An end portion of the third conductive layer coincides with or substantially coincides with an end portion of the first EL layer. A display device in which an end portion of the fourth conductive layer coincides with or substantially coincides with an end portion of the second EL layer. 　 In any one of claims 1 to 5, The height of the upper surface of the first pixel electrode is higher than the height of the upper surface of the light shielding layer, A display device in which the height of the upper surface of the second pixel electrode is higher than the height of the upper surface of the light shielding layer. 　 In any one of claims 1 to 5, The light shielding layer has a resin, a display device. 　 In any one of claims 1 to 5, The first layer and the second layer each have a resin, a display device. 　 In any one of claims 1 to 5, Having a first insulating layer, The first conductive layer, the second conductive layer, and the light shielding layer each contact the upper surface of the first insulating layer, The light shielding layer has a region having a thickness of 200 nm or more and 2000 nm or less between the first pixel electrode and the second pixel electrode, a display device. 　 In any one of claims 1 to 5, Having a second insulating layer, The second insulating layer has a region in contact with the side surfaces of the first EL layer, the side surfaces of the second EL layer, and the upper surface of the light shielding layer, a display device.

Images