Light-emitting device, display device, and method for manufacturing light-emitting device

Abstract

The present invention comprises: a first bank (1) in which an opening (8) is formed; a first electrode (2) that overlaps the opening (8) in plan view; a first functional layer (3) that is formed above the first bank (1) and the first electrode (2) and has a flat upper surface; a first light-emitting layer (4) that is formed above the first functional layer (3); a second bank (5) that is formed above the first light-emitting layer (4) and overlaps the first bank (1) in plan view; and a second electrode (7) that is formed above the second bank (5).

Description

Light-emitting device, display device, and method for manufacturing light-emitting device

[0001] The present disclosure relates to a light-emitting device, a display device, and a method for manufacturing a light-emitting device.

[0002] Patent Document 1 discloses a configuration in which a partition wall and an insulating layer are provided in order to improve the uniformity of the film thickness of the functional layer.

[0003] Japanese Patent Publication No. 2019-192337

[0004] In the technique disclosed in Patent Document 1, ink may be repelled by the slopes of the partition walls, which may cause unevenness in the film thickness of the functional layer.

[0005] A light-emitting device according to one aspect of the present disclosure includes a first bank having an opening formed therein, a first electrode overlapping the opening in a planar view, a functional layer formed above the first bank and the first electrode and having a flat upper surface, a first light-emitting layer formed above the functional layer, a second bank formed above the first light-emitting layer and overlapping the first bank in a planar view, and a second electrode formed above the second bank.

[0006] According to one aspect of the present disclosure, the risk of unevenness in the thickness of the functional layer can be reduced.

[0007] FIG. 1 is a cross-sectional view showing a schematic configuration of a light-emitting device according to embodiment 1 of the present disclosure. FIG. 2 is a plan view showing the width of a first bank and the width of a second bank in a light-emitting device according to embodiment 1 of the present disclosure. FIG. 3 is a cross-sectional view illustrating the relationship between the inclination angle of the side surface of the second bank and the thickness unevenness of the second functional layer. FIG. 4 is a cross-sectional view illustrating the relationship between the inclination angle of the side surface of the second bank and the thickness unevenness of the second functional layer. FIG. 5 is a cross-sectional view showing a schematic configuration of a light-emitting device according to embodiment 2 of the present disclosure. FIG. 6 is a plan view showing the width of a first bank and the width of a second bank in a light-emitting device according to embodiment 2 of the present disclosure. FIG. 7 is a cross-sectional view showing a schematic configuration of a light-emitting device according to embodiment 3 of the present disclosure. FIG. 8 is a cross-sectional view showing a schematic configuration of a light-emitting device according to embodiment 3 of the present disclosure. FIG. 9 is a cross-sectional view showing a schematic configuration of a light-emitting device according to embodiment 4 of the present disclosure. FIG. 10 is a cross-sectional view showing a schematic configuration of a display device according to embodiment 5 of the present disclosure. FIG. 11 is a diagram illustrating a method for manufacturing a light-emitting device according to embodiment 6 of the present disclosure. FIG. 12 is a diagram illustrating a method for forming a first light-emitting layer according to embodiment 7 of the present disclosure.

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The following describes an embodiment of the present disclosure. For convenience of explanation, the same reference numerals are used to designate components having the same functions as those previously described, and the description thereof may not be repeated.

[0009] 1 is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to a first embodiment of the present disclosure. The light-emitting device 101 includes a first bank 1, a first electrode 2, a first functional layer 3, a first light-emitting layer 4, a second bank 5, a second functional layer 6, and a second electrode 7. The light-emitting layer can be considered as a specific example of a functional layer.

[0010] An opening 8 is formed in the first bank 1. The first bank 1 may separate the first electrode 2. The first electrode 2 overlaps with the opening 8 when the light emitting device 101 is viewed from above.

[0011] The first functional layer 3 is formed above the first bank 1 and the first electrode 2. The top surface of the first functional layer 3 is flat. The first light-emitting layer 4 is formed above the first functional layer 3.

[0012] In the present disclosure, "flat" means that the surface roughness is 100 nm or less. The surface roughness of the upper surface of the first functional layer 3 may be 50 nm or less, preferably 20 nm, more preferably 10 nm or less, and even more preferably 5 nm or less. It is preferable that the entire upper surface of the first functional layer 3 is formed flat. For example, when the outermost surface of the substrate 18 is flat, the surface roughness may be the change in the distance between the outermost surface of the substrate 18 and the upper surface of the first functional layer 3. When depressions are formed on the outermost surface of the substrate 18, the surface of the substrate 18 when the depressions are filled and the entire outermost surface of the substrate 18 is made flat may be defined as the outermost surface of the substrate 18, and the surface roughness may be defined by that surface. The surface roughness may be measured, for example, by cutting the light-emitting device perpendicular to the substrate, observing the cross section with an electron microscope, and measuring the distance between the outermost surface of the substrate 18 and the upper surface of the first functional layer 3. The distance may be measured, for example, by measuring the distance between the top surface of substrate 18 and the top surface of first functional layer 3 at the center of the light-emitting region in the cross section and at the highest point within one pixel in the layer below first functional layer 3 (for example, in FIG. 1 , the point that overlaps in plan view with the topmost point of first bank 1 in the cross section), and then confirming whether the difference between the two is within the above-mentioned numerical range. If the difference between the two is within the above-mentioned numerical range, the top surface of first functional layer 3 may be considered to be "flat."

[0013] The second bank 5 is formed in a layer above the first light-emitting layer 4. The second bank 5 overlaps the first bank 1 in a plan view of the light-emitting device 101. The second electrode 7 is formed in a layer above the second bank 5. The second functional layer 6 is formed between the second bank 5 and the second electrode 7.

[0014] An example of the first light-emitting layer 4 is a light-emitting layer of a QLED (quantum dot light-emitting diode).

[0015] The first electrode 2 may be an anode, and the second electrode 7 may be a cathode. In this case, an example of the first functional layer 3 is a hole transport layer that transports holes to the first light-emitting layer 4, and an example of the second functional layer 6 is an electron transport layer that transports electrons to the first light-emitting layer 4.

[0016] The first electrode 2 may be a cathode, and the second electrode 7 may be an anode. In this case, an example of the first functional layer 3 is an electron transport layer, and an example of the second functional layer 6 is a hole transport layer.

[0017] In light-emitting devices in which functional layers are formed between banks, the contact of the functional layers with the side surfaces (e.g., inclined surfaces) of the banks can result in thickness variations, such as coffee rings, within the light-emitting region. Furthermore, depending on the bank material and the type of solvent used, thickness variations can also occur when the liquid is pulled or repelled by the side surfaces of the banks. Such thickness variations are undesirable because they cause uneven light emission within pixels. Furthermore, in light-emitting devices in which multiple functional layers are formed, thickness variations in lower functional layers can exacerbate thickness variations in upper functional layers, exacerbating the problem.

[0018] In the light-emitting device 101, the first functional layer 3 covers the first bank 1 to form a flat upper surface, thereby reducing unevenness in film thickness, and the first light-emitting layer 4 is formed so as not to contact the side surface of the second bank 5, thereby reducing unevenness in film thickness. Furthermore, since unevenness in film thickness of the functional layer formed in the lower layer is particularly reduced, unevenness in film thickness of the light-emitting device 101 as a whole is preferably reduced.

[0019] In other words, the light-emitting device 101 can prevent the material of the first functional layer 3 and the material of the first light-emitting layer 4 from being repelled due to the slope of the bank, thereby reducing the risk of unevenness in the thickness of the first functional layer 3 and the thickness of the first light-emitting layer 4.

[0020] Furthermore, in the light-emitting device, leakage current may flow between the first electrode and the second electrode through regions (such as edges) where no functional layer is formed. In the light-emitting device 101, by forming the second bank 5 in regions where the first light-emitting layer 4, which is prone to leakage current, is not formed, the distance between the first electrode 2 and the second electrode 7 in regions where the first light-emitting layer 4 is not formed is increased, thereby suppressing the flow of leakage current between the first electrode 2 and the second electrode 7. The second bank 5 has a moat-like shape with the first light-emitting layer 4 as its bottom, thereby reducing the risk of an object coming into contact with the first light-emitting layer 4 from the side. Therefore, during the manufacturing of the light-emitting device 101, the risk of the surface of the first light-emitting layer 4 being damaged due to contact with an object can be reduced.

[0021] Furthermore, by increasing the height T5 of the second bank 5, the second bank 5 can effectively suppress current leakage between the first electrode 2 and the second electrode 7. As a specific example of a second bank 5 having a large height T5, the height T5 of the second bank 5 may be greater than the height T1 of the upper end of the first bank 1 relative to the upper end of the first electrode 2. The height T5 of the second bank 5 may be the distance from the lower end of the second bank 5 to the upper end of the second bank 5.

[0022] 2 is a plan view showing the width W1 of the first bank 1 and the width W5 of the second bank 5 of the light-emitting device 101 according to the first embodiment of the present disclosure. In Fig. 2, the first bank 1 and the second bank 5 are indicated by a dashed line and a dashed-dotted line, respectively. For simplicity of illustration, components other than the first bank 1 and the second bank 5 are omitted from Fig. 2.

[0023] The first functional layer 3 and the first light-emitting layer 4 are prone to uneven thickness above and around the first bank 1. In a plan view of the light-emitting device 101, the width W5 of the second bank 5 may be greater than the width W1 of the first bank 1. This allows the second bank 5 to widely cover the areas of the first functional layer 3 and the first light-emitting layer 4 where uneven thickness is likely to occur, thereby suppressing uneven light emission by the first light-emitting layer 4 and deterioration of the electrical characteristics of the light-emitting device 101 due to current concentration in specific locations.

[0024] 3 and 4 are cross-sectional views illustrating the relationship between the inclination angle of the side surface 10 of the second bank 5 and the thickness unevenness of the second functional layer 6. The side surface 9 of the first bank 1 may have a larger inclination angle with respect to the direction D2 perpendicular to the stacking direction D1 of the first electrode 2 and the second electrode 7 than the side surface 10 of the second bank 5. That is, the inclination angle θ1 of the side surface 9 of the first bank 1 with respect to the direction D2 may be larger than the inclination angle θ2 of the side surface 10 of the second bank 5 with respect to the direction D2. This can improve the uniformity of the thickness of each layer formed above the second bank 5, thereby suppressing uneven light emission by the first light-emitting layer 4 and deterioration of the electrical characteristics of the light-emitting device 101 due to current concentration in specific locations.

[0025] 3, when the inclination angle θ2 of the side surface 10 of the second bank 5 with respect to direction D2 is large, there is a risk that the thickness H1 of the second functional layer 6 near the second bank 5 will be significantly larger than the thickness H2 of the second functional layer 6 at a position distant from the second bank 5. As shown in Fig. 4, when the inclination angle θ2 of the side surface 10 of the second bank 5 with respect to direction D2 is small, the thickness H1 is not much larger than the thickness H2, and therefore the thickness of the second functional layer 6 is highly uniform.

[0026] The side surface 9 of the first bank 1 may have a smaller inclination angle with respect to the direction D2 perpendicular to the stacking direction D1 of the first electrode 2 and the second electrode 7 than the side surface 10 of the second bank 5. That is, the inclination angle θ1 of the side surface 9 of the first bank 1 with respect to the direction D2 may be smaller than the inclination angle θ2 of the side surface 10 of the second bank 5 with respect to the direction D2. This makes it possible to realize a light-emitting device 101 with a high aperture ratio. This is because, by reducing the inclination angle θ1 of the side surface 9 of the first bank 1 with respect to the direction D2, the minimum width W1 of the first bank 1 can be reduced while covering the end portion 12 of the first electrode 2, and as a result, the minimum width W5 of the second bank 5 can be reduced. A smaller width W5 of the second bank 5 results in a higher aperture ratio of the light-emitting device 101.

[0027] In a plan view of the light emitting device 101 , the end 11 of the first light emitting layer 4 may overlap the first bank 1 .

[0028] The first bank 1 may cover the end 12 of the first electrode 2. This makes it possible to suppress current leakage between the pixel corresponding to the first electrode 2 and another pixel. If the pitch between these pixels is on the order of μm, insulation between these pixels can be ensured even if the first bank 1 is an organic insulating film.

[0029] In the light emitting device 101, it is possible to suppress unevenness in the film thickness of the functional layer, and also to suppress leakage currents from flowing between adjacent first electrodes 2 and between the first electrode 2 and the second electrode 7.

[0030] Second Embodiment FIG. 5 is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to a second embodiment of the present disclosure.

[0031] 6 is a plan view showing the width W1 of the first bank 1 and the width W5 of the second bank 5 of the light-emitting device 101 according to the second embodiment of the present disclosure. In Fig. 6, the first bank 1 and the second bank 5 are indicated by a dashed line and a dashed-dotted line, respectively. For simplicity of illustration, components other than the first bank 1 and the second bank 5 are omitted from Fig. 6.

[0032] Light-emitting device 101 with a high aperture ratio can be realized by having second bank 5 with a small width W5 and having a large width for the portion of first light-emitting layer 4 that actually emits light. As a specific example of light-emitting device 101 with a high aperture ratio, width W5 of second bank 5 may be smaller than width W1 of first bank 1 in a plan view of light-emitting device 101.

[0033] The light-emitting device 101 may include an auxiliary electrode 13 formed between the second bank 5 and the second electrode 7 and having a resistance value lower than that of the second electrode 7. When the resistance of a commonly used second electrode 7 is relatively high, a voltage drop (IR drop) occurs within the second electrode 7 depending on whether the light-emitting device 101 is located in the center or at the edge of the display area of ​​the display device, causing a change in the voltage value applied to the first light-emitting layer 4. Therefore, by providing the light-emitting device 101 with a low-resistance auxiliary electrode 13, it is possible to suppress the change in the voltage value applied to the first light-emitting layer 4 depending on whether the light-emitting device 101 is located in the center or at the edge of the display area of ​​the display device. This reduces brightness unevenness across the entire display area of ​​the display device due to IR drop in the second electrode 7. If the auxiliary electrode 13 is sufficiently close to the vicinity of the second bank 5, where the thickness of the second electrode 7 is likely to be large, the IR drop and changes in the electrical characteristics of the light-emitting device 101 caused by uneven thickness of the second electrode 7 can be offset, thereby improving the uniformity of display brightness in the display device.

[0034] The thickness H11 of the edge portion 11 formed in the non-light-emitting region of the first light-emitting layer 4 may be larger than the thickness H14 of the central portion 14 of the first light-emitting layer 4. This makes it possible to suitably suppress current leakage between the first electrode 2 and the second electrode 7.

[0035] The second functional layer 6 may also be formed between the first light-emitting layer 4 and the second bank 5. In this case, the second functional layer 6 is not affected by the side surface of the second bank 5, and therefore, it is possible to prevent the second functional layer 6 from having uneven thickness in the light-emitting region.

[0036] Third Embodiment FIGS. 7 and 8 are cross-sectional views showing a schematic configuration of a light-emitting device 101 according to a third embodiment of the present disclosure.

[0037] 7, an end portion 11 of the first light-emitting layer 4 may overlap a second light-emitting layer 15 that is separate from the first light-emitting layer 4. This can suitably suppress current leakage between the first electrode 2 and the second electrode 7. The end portion 11 of the first light-emitting layer 4 and the second light-emitting layer 15 may overlap directly, or may overlap with some kind of member sandwiched therebetween.

[0038] 8 , the thickness H11 of the edge portion 11 of the first light-emitting layer 4 may be larger than the thickness H14 of the central portion 14 of the first light-emitting layer 4. This makes it possible to suitably suppress current leakage between the first electrode 2 and the second electrode 7.

[0039] Furthermore, according to the configurations of Figures 7 and 8, an insulating second bank 5 is formed to cover the end 11 of the first light-emitting layer 4, thereby more effectively suppressing current leakage between the first electrode 2 and the second electrode 7.

[0040] 9 is a cross-sectional view showing a schematic configuration of a light-emitting device 101 according to a fourth embodiment of the present disclosure. The first light-emitting layer 4 may include a plurality of quantum dots 16 and an inorganic matrix material 17 filling the spaces between the plurality of quantum dots 16. This allows the light-emitting device 101 to have high reliability.

[0041] The inorganic matrix material 17 may contain a plurality of quantum dots 16. Here, containing means that the inorganic matrix material 17 covers a part or all of the surface of each of the plurality of quantum dots 16, for example. The inorganic matrix material 17 may be a single film that is not separated by a material other than the inorganic matrix material 17. Furthermore, the inorganic matrix material 17 may be a single film having an area of ​​1000 nm 2 in a plan view of the light-emitting device 101. ２ The inorganic matrix material 17 may be formed of a single or multiple layers, or may be an integrated film seamlessly connected by chemical bonds of the materials constituting the inorganic matrix material 17. The inorganic matrix material 17 is formed, for example, so as to partially or completely fill spaces formed between the quantum dots 16 contained in the inorganic matrix material 17. There may be voids in the first light-emitting layer 4. The quantum dots 16 contained in the inorganic matrix material 17 may be present at intervals from one another. The inorganic matrix material 17 may contain an inorganic substance. In particular, the inorganic matrix material 17 may contain a metal sulfide, a metal oxide, or a metal halide. The inorganic matrix material 17 may also contain at least one of a II-VI compound, a group II oxide, a group III oxide, and a group IV oxide. The inorganic matrix material 17 may be formed of, for example, silicon oxide (SiO ２), and zinc sulfide (ZnS). In addition, the inorganic matrix material 17 may contain, for example, titanium oxide (TiO ２ ), aluminum oxide (Al ２ O ３ ), boron oxide (B ２ O ３ ), phosphorus oxide (P ２ O ５ ), germanium oxide (GeO ２ ), hafnium oxide (HfO ２ ), zinc oxide (ZnO), zirconium oxide (ZrO ２ ), tellurium oxide (TeO ２ ), bismuth oxide (Bi ２ O ３ ), vanadium oxide (V ２ O ５ ), antimony oxide (Sb ２ O ５ ), lead oxide (PbO), copper oxide (CuO), copper(I) iodide (CuI), and silver(I) iodide (AgI). The chemical formulas in parentheses after the compound names are representative examples. The composition ratios described in the chemical formulas may be stoichiometric, but do not necessarily have to be stoichiometric.

[0042] 10 is a cross-sectional view showing a schematic configuration of a display device 201 according to a fifth embodiment of the present disclosure. The display device 201 includes three light-emitting devices 101. These three light-emitting devices 101 may emit red, green, and blue light, respectively. In FIG. 10 , with respect to the first light-emitting layer 4 of each light-emitting device 101, R indicates that the first light-emitting layer 4 emits red light, G indicates that the first light-emitting layer 4 emits green light, and B indicates that the first light-emitting layer 4 emits blue light.

[0043] The three light-emitting devices 101 are formed on a TFT substrate 18 provided with TFTs (Thin Film Transistors), and are separated from one another by an insulating first bank 1 and an insulating second bank 5. The TFT substrate 18 is provided with pixel circuits 19 corresponding to each of the three light-emitting devices 101.

[0044] 11 is a diagram illustrating a method for manufacturing a light emitting device 101 according to a sixth embodiment of the present disclosure. The method for manufacturing the light emitting device 101 includes steps S1 to S5.

[0045] In step S1, a first bank 1 having an opening 8 formed therein and a first electrode 2 overlapping with the opening 8 in a plan view of the light-emitting device 101 are formed. Examples of techniques for forming the first bank 1 include photolithography and vapor deposition.

[0046] In step S2, a first functional layer 3 having a flat upper surface is formed above the first bank 1 and the first electrode 2. Examples of techniques for forming the first functional layer 3 include vapor deposition and coating methods such as solution coating.

[0047] In step S3, the first light-emitting layer 4 is formed above the first functional layer 3. One example of a technique for forming the first light-emitting layer 4 is patterning using a photolithography method.

[0048] In step S4, second banks 5 are formed above first light-emitting layers 4 so as to overlap first banks 1 in a plan view of light-emitting device 101. Examples of techniques for forming second banks 5 include photolithography and vapor deposition.

[0049] In step S5 , the second functional layer 6 and the second electrode 7 are formed above the second bank 5 .

[0050] 12 is a diagram illustrating a method for forming the first light-emitting layer 4 according to a seventh embodiment of the present disclosure. The method for forming the first light-emitting layer 4 may include steps S6 to S8.

[0051] In step S6, a coating liquid 22 is applied, which contains a plurality of quantum dots 16 coordinated with thermally decomposable ligands, a metal sulfide precursor 20, and a low-polarity solvent 21. The metal sulfide precursor 20 may be xanthogenic acid, thiourea acid, or dithiocarboxylic acid.

[0052] In step S7, the applied coating liquid 22 is dried to evaporate the low-polarity solvent 21. The drying temperature may be 100°C.

[0053] In step S8, the dried coating liquid 22 is baked at a temperature equal to or higher than the decomposition temperature of the thermally decomposable ligand. The baking temperature may be 175°C.

[0054] The first light-emitting layer 4 formed through steps S6 to S8 includes a plurality of quantum dots 16 and an inorganic matrix material 17. The method for manufacturing the light-emitting device 101 includes a process for forming the second bank 5 after forming the first light-emitting layer 4. According to the method for forming the first light-emitting layer 4 according to the seventh embodiment of the present disclosure, the inorganic matrix material 17 can suppress deterioration of the first light-emitting layer 4 throughout this process.

[0055] The present disclosure is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Embodiments obtained by appropriately combining the technical means disclosed in different embodiments are also included in the technical scope of the present disclosure. Furthermore, new technical features can be formed by combining the technical means disclosed in each embodiment.

[0056] 1 First bank 2 First electrode 3 First functional layer 4 First light-emitting layer 5 Second bank 6 Second functional layer 7 Second electrode 8 Opening 9 Side of first bank 10 Side of second bank 11 End of first light-emitting layer 12 End of first electrode 13 Auxiliary electrode 14 Central portion of first light-emitting layer 15 Second light-emitting layer 16 Quantum dot 17 Inorganic matrix material 18 TFT substrate 19 Pixel circuit 20 Metal sulfide precursor 21 Low-polarity solvent 22 Coating liquid 101 Light-emitting device 201 Display device D1 Stacking direction of first electrode and second electrode D2 Direction perpendicular to stacking direction of first electrode and second electrode H1 Thickness of second functional layer near second bank H2 Thickness of second functional layer at a position away from second bank H11 Thickness of edge of first light-emitting layer H14 Thickness of central portion of first light-emitting layer T1 Height of the top end of the first bank relative to the top end of the first electrode T5 Height of the second bank W1 Width of the first bank W5 Width of the second bank

Claims

1. A light-emitting device including a first bank having an opening, a first electrode overlapping the opening in plan view, a functional layer formed above the first bank and the first electrode and having a flat upper surface, a first light-emitting layer formed above the functional layer, a second bank formed above the first light-emitting layer and overlapping the first bank in plan view, and a second electrode formed above the second bank.

2. The light-emitting device according to claim 1, wherein a height of the second bank is greater than a height of an upper end of the first bank with respect to an upper end of the first electrode.

3. The light-emitting device according to claim 1 or 2, wherein a width of the second bank is greater than a width of the first bank in plan view.

4. The light-emitting device according to claim 1 or 2, wherein a width of the second bank is smaller than a width of the first bank in plan view.

5. The light-emitting device according to any one of claims 1 to 4, wherein a side surface of the first bank has a greater inclination angle with respect to a direction perpendicular to a stacking direction of the first electrode and the second electrode than a side surface of the second bank.

6. The light-emitting device according to any one of claims 1 to 4, wherein a side surface of the first bank has a smaller inclination angle with respect to a direction perpendicular to a stacking direction of the first electrode and the second electrode than a side surface of the second bank.

7. The light-emitting device according to any one of claims 1 to 6, further including an auxiliary electrode formed between the second bank and the second electrode and having a resistance value smaller than that of the second electrode.

8. The light-emitting device according to any one of claims 1 to 7, wherein an end portion of the first light-emitting layer overlaps the first bank in plan view.

9. The light-emitting device according to claim 8, wherein a thickness of an end portion of the first light-emitting layer is greater than a thickness of a central portion of the first light-emitting layer.

10. The light-emitting device according to claim 8 or 9, wherein an end portion of the first light-emitting layer overlaps a second light-emitting layer different from the first light-emitting layer.

11. The light-emitting device according to any one of claims 1 to 10, wherein the first bank covers an end portion of the first electrode.

12. The light-emitting device according to any one of claims 1 to 11, wherein the first light-emitting layer includes a plurality of quantum dots and an inorganic matrix material filling between the plurality of quantum dots.

13. A display device comprising the light-emitting device according to any one of claims 1 to 12.

14. A method for manufacturing a light-emitting device, comprising: forming a first bank in which an opening is formed and a first electrode overlapping the opening in a plan view; forming a functional layer having a flat upper surface on an upper layer of the first bank and the first electrode; forming a first light-emitting layer on an upper layer of the functional layer; forming a second bank overlapping the first bank in the plan view on an upper layer of the first light-emitting layer; and forming a second electrode on an upper layer of the second bank.

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