Device and method for operating a device

Abstract

A device (1) is provided, comprising a sensor (2) with a light source (3), a photodiode (4) and a further photodiode (5). The device (1) further comprises a cover (8), wherein the light source (3) is configured to emit electromagnetic radiation, and the cover (8) is configured to reflect at least a portion of the electromagnetic radiation emitted by the light source (3) to the photodiode (4) and / or the further photodiode (5). Furthermore, a method for operating a device is provided.

Description

[0001] Description

[0002] DEVICE AND METHOD FOR OPERATING A DEVICE

[0003] The present disclosure relates to a device and to a method for operating a device.

[0004] It is an object to provide a device for efficiently detecting a force on an object. A further object is to provide a method for efficiently operating a device.

[0005] According to at least one embodiment of the device, the device comprises a sensor. For instance, the sensor is configured to detect, measure and / or analyze a distance of the sensor to an object. For example, the sensor is or comprises a proximity sensor, in particular an optical proximity sensor. An optical proximity sensor can measure diffuse or direct reflected electromagnetic radiation from the object.

[0006] For example, the device comprising the sensor is or comprises a touch sensor. This can mean that the object of which the sensor detects, measures and / or analyzes the touch is also comprised by the device. For example, the object may then be an outer surface of the device, in particular a touchable surface of the device. If the surface is touched, the height, warp and / or tilt of the sensor changes. A resulting change of the reflected electromagnetic radiation may correlate with a touch force applied to the surface.

[0007] For example, the sensor comprises a main extension direction and / or a main extension plane. According to at least one embodiment of the device , the sensor comprises a light source . The light source is configured to generate and / or emit electromagnetic radiation . In particular, the light source is configured to emit electromagnetic radiation in the direction of a cover of the device . It is possible , that the electromagnetic radiation emitted by the light source impinges on the side of the cover facing the sensor .

[0008] The light source is configured to emit electromagnetic radiation with, for example , any wavelength or any wavelength range of the electromagnetic radiation . In other words , during operation of the light source , the light source may emit electromagnetic radiation with any wavelength or any wavelength range of the electromagnetic radiation . For example , the light source is configured to emit electromagnetic radiation in the UV, visible or IR range .

[0009] The light source comprises a field of view . " Field of view" can thereby mean an angular extent of the area illuminated by the light source . For instance , the field of view corresponds to the full width at hal f maximum ( short : FWHM) of the irradiation of the LED .

[0010] For example , the light source is or comprises a LED . It is also possible , that the light source is or comprises a laser . For example , the light source does not comprise a collimating reflector and / or a lens . Thus , it is possible , that electromagnetic radiation emitted by the light source and impinging on the cover comprises Lambertian characteristics .

[0011] For example , this means that a field of view of the light source is at least approximately 60 ° . According to at least one embodiment of the device, the sensor comprises a photodiode. The photodiode is configured to detect electromagnetic radiation. For instance, the photodiode is configured to detect at least a portion of the electromagnetic radiation emitted by the light source. The photodiode can be integrated into a chip, e.g. a semiconductor chip.

[0012] According to at least one embodiment of the device, the sensor comprises a further photodiode. It is possible, that the sensor comprises at least one further photodiode. For example, the sensor comprises two or more than two further photodiodes. For instance, the further photodiode is integrated into a chip. It is possible, that the photodiode and the at least one further photodiode are integrated into a common chip.

[0013] According to at least one embodiment of the device, the device comprises a cover. For example, the cover is the object for which a distance to the sensor may be determined. This can mean that the cover comprises the touchable surface of the device. For instance, the cover is configured to move, bend, warp or being tilted during application of a force, e.g. a touch force on the cover. This can mean, for example, that the cover is flexible.

[0014] The cover, for example a ceil, can be arranged above the sensor in a vertical direction. For instance, a main extension direction of the cover is at least approximately parallel to a main extension direction of the sensor and may run transversely or vertically to a vertical direction. For example, the cover is arranged above the sensor along the vertical direction . The cover can be configured to warp, to bend and / or to change its distance to the sensor when a force , in particular a touch force , is applied to the side of the cover facing away from the sensor . Alternatively or additionally, the cover can be configured to alter its orientation with respect to the main extension plane of the sensor .

[0015] The cover may comprise a plastic and / or a glass , for example . However, other materials are also possible . For example , the cover is di f fuse reflective on the side of the cover facing the sensor . In this case , any material resulting in a di f fuse reflectance of the cover is suitable for forming the cover or at least a part of the cover .

[0016] Alternatively, it is possible that the cover is configured to reflect impinging electromagnetic radiation depending on the angle of incidence .

[0017] According to at least one embodiment of the device , the light source is configured to emit electromagnetic radiation .

[0018] According to at least one embodiment , the cover is configured to reflect at least a portion of the electromagnetic radiation emitted by the light source to the photodiode and / or to the further photodiode . This does not necessarily mean that the cover directs the radiation towards the photodiode and / or the further photodiode . For instance , it is possible that the cover di f fusively reflects the electromagnetic radiation emitted by the light source .

[0019] In at least one embodiment of the device , the device comprises a sensor and a cover . The sensor may comprise a light source, a photodiode and a further photodiode. For instance, the light source is configured to emit electromagnetic radiation. The cover can be configured to reflect at least a portion of the electromagnetic radiation emitted by the light source to the photodiode and / or to the further photodiode.

[0020] The device can comprise a molded body. For example, the photodiode, the further photodiode and / or the light source are at least partially surrounded or encapsulated by the molded body.

[0021] An advantage of the device is, that multiple sensing areas can be detected or analyzed with one sensor. Thus, the device can efficiently determine singe point forces, positions of point forces on the cover and / or movements of the force applied to the cover. Due to the device requiring only one sensor, a set up or assembly of the device can be simplified.

[0022] For example, the sensor comprises at least two photodiodes, for instance multiple photodiodes, which are arranged adjacent to the light source or around the light source. A power distribution of the reflected, for instance diffusely reflected electromagnetic radiation is equal or similar for photodiodes comprising the same or at least approximately the same distance to the cover. A force applied to the center of the cover may cause similar variations of detected electromagnetic radiation on all photodiodes of the sensor. A force applied outside the center of the cover, e.g. an off- axis force, may generate different variations of the signals of the photodiodes. For example, the light distribution and / or intensity detected by the photodiodes is varied due to the force applied to the cover. For example, the device comprises an optical solution to rebuild the functionality of capacitive touch pads.

[0023] With the device, a position of a 0D force, e.g. a point force on the cover can be determined. For example, the device is or comprises a position sensitive optical force touch sensor. The device can further comprise a ID resolution of a force, for instance a touch force, applied to the cover, e.g. a ID sliding on the cover and / or a 2D resolution resembling a joystick functionality.

[0024] According to at least one embodiment of the device, the photodiode and the further photodiode are arranged on opposing sides of the light source. With such an arrangement, the position or a movement of a force applied to the cover can efficiently be determined.

[0025] According to at least one embodiment, the photodiode and the further photodiode comprise different fields of view. The field of view of the photodiode or of the further photodiode can mean an angular extent of the area observable by the photodiode or the further photodiode. For example, the field of view of the photodiode or of the further photodiode depends on a targeting distance range to the cover or ceil. For instance, the field of view of the photodiode or of the further photodiode is approximately 30 deg (degree) + / - 15 deg .

[0026] The fields of view of the photodiode and the further photodiode can differ in their direction. For example, the fields of view are tilted in opposing directions. It is possible, that the photodiode and the further photodiode are arranged on opposing sides of the light source. The field of view of the photodiode can be tilted in a direction away from the light source. Alternatively or additionally, the field of view of the further photodiode can be tilted in a direction away from the light source.

[0027] According to at least one embodiment, the fields of view of the photodiode and the further photodiode are tilted in different directions. For example, this can increase a signal differentiation for different touch points of the cover, i.e. points of the cover in which a force is applied to the cover. This may be particularly beneficial for large distances, e.g. at least 2 mm, at least 4 mm or at least 10 mm, between the sensor and the cover.

[0028] According to at least one embodiment, the fields of view of the photodiode and / or the further photodiode are tilted by an optical element, wherein the optical element comprises louvers, a multi aperture cover, a lid window and / or an optical component. The optical element can be arranged between the photodiode and the cover and / or between the further photodiode and the cover.

[0029] For example, the optical component comprises a lens, in particular a convex lens, or a prism. In this case, for efficiently tilting the field of view of the photodiode or the further photodiode, a center of the lens may not overlap with a center of the photodiode or the further photodiode. For instance, the optical component is formed of the molded body or is arranged on the molded body. According to at least one embodiment of the device , the fields of view of the photodiode and the further photodiode do not overlap .

[0030] According to at least one embodiment of the device , the photodiode , the further photodiode and the light source are arranged in line . This can mean that the light source is arranged between the photodiode and the further photodiode . Such an arrangement can ef ficiently enable measurements of a force touch with ID resolution .

[0031] According to at least one embodiment , the device comprises at least two further photodiodes . For instance , the photodiode and the light source are arranged in line with at most one of the further photodiodes . Having at least one further photodiode not arranged in line with the light source and the remaining photodiodes may enable measurements of a force touch with 2D resolution .

[0032] According to at least one embodiment of the device , the photodiode and the further photodiodes form an array of photodiodes . The photodiodes in the array of photodiodes comprise di f ferent fields of view, for example . That the photodiode and the further photodiode form an array of photodiodes can mean that the photodiode and the further photodiode / s are integrated into a common chip . Thus , for instance , the photodiode and the further photodiode / s can be easily arranged in one piece within the device .

[0033] For example , the array of photodiodes is arranged laterally to the light source . This can mean that the light source is not part of the common chip comprising the photodiodes . Alternatively or additionally, the light source can also be integrated into the common chip of the photodiodes. For example, the light source can then be arranged in the center of the array of photodiodes. In other words, the photodiodes can be arranged around the light source.

[0034] According to at least one embodiment, the cover comprises a reflective region on the side of the cover facing the sensor. For instance, the cover comprises a higher reflectance in the reflective region than outside the reflective region. The reflective region can be reflective for the electromagnetic radiation emitted by the light source. For example, the reflective region is configured to diffusively reflect at least a portion of the electromagnetic radiation emitted by the light source.

[0035] For example, a reflectance of the reflective region for the electromagnetic radiation emitted by the light source is at least 50%, for example at least 70%, at least 80%, at least 90%, for example at least 95% or at least 99%. A reflectance of the cover for the electromagnetic radiation emitted by the light source outside the reflective region is, for example, at most 20%, in particular at most 10%, for example at most 5%, at most 2% or at most 1%.

[0036] It is possible, that the cover comprises at least a further reflective region on the side of the cover facing the sensor. The further reflective region can be arranged spaced apart from the reflective region. The further reflective region can be reflective for the electromagnetic radiation emitted by the light source. For example, the further reflective region is configured to diffusively reflect at least a portion of the electromagnetic radiation emitted by the light source. For example , a field of view of the photodiode corresponds to or overlaps with the reflective region . It is possible , that a field of view of the further photodiode corresponds to or overlaps with the further reflective region .

[0037] For instance , the reflective region and / or the at least one further reflective region may not overlap with the light source along a vertical direction .

[0038] According to at least one embodiment , the cover comprises a di f fuse reflectance . As a result , the power or intensity detected by the respective photodiode may mainly depend on a distance of the photodiode to the cover .

[0039] According to at least one embodiment , the light source comprises Lambertian characteristics . In other words , the light source can be a Lambertian light source .

[0040] According to at least one embodiment of the device , the device is configured to detect a position, a movement and / or a speed of a force . In particular, the device is configured to detect a position, a movement and / or a speed of a force applied to the cover . For example , the force is a touch force .

[0041] Furthermore , a method for operating a device is provided . The method for operating a device can preferably be performed to operate the device described herein . This means all features disclosed for the device are also disclosed for the method for operating a device and vice-versa .

[0042] According to at least one embodiment of the method for operating a device , a light source of a sensor emits electromagnetic radiation . For example , the electromagnetic radiation is reflected by a cover of the device . The electromagnetic radiation reflected by the cover can be detected by a photodiode and / or a further photodiode . For instance , the photodiode and / or the further photodiode are comprised by the sensor and / or the device . The method can be a method for operating a device described herein . In other words , the device can be the device described herein .

[0043] According to at least one embodiment of the method, a force is applied to the cover of the device . For example , the method then comprises determining a position, movement and / or speed of the force applied to the cover . For instance , the force is a touch force being applied to the cover . The touch force can, in particular, be applied from the side of the cover facing away from the sensor .

[0044] According to at least one embodiment of the method, the position, movement and / or speed of the force applied to the cover is determined by comparing a variation of a signal of the photodiode with a variation of a further signal of the further photodiode . The signal and the further signal may correspond to the power or the intensity of the electromagnetic radiation reflected by the cover within the field of view of the respective photodiode .

[0045] Further advantages and advantageous designs and further developments of the device and the method for operating a device will become apparent from the following exemplary embodiments , which are described below in association with the figures . Figure 1 shows a schematic view of a device according to an exemplary embodiment .

[0046] Figures 2A and 2B show detectable forces applied to the cover of a device according to an exemplary embodiment .

[0047] Figures 3 and 4 show schematic views of a device according to exemplary embodiments .

[0048] Figure 5 shows schematic views of structures within the device according to exemplary embodiments .

[0049] Figures 6 and 7 show schematic views of sensors according to exemplary embodiments .

[0050] Figures 8A, 8B, 8C and 8D show di f ferent exemplary embodiments of a reflective region of a cover of the device .

[0051] Figures 9 , 10 , 11 and 12 shows schematic top views of sensors according to exemplary embodiments .

[0052] Figure 13 shows a schematic view of a device according to a comparative example .

[0053] Figures 14A, 14B, 14C show graphs of a comparative example .

[0054] Figures 15A and 15B show schematic irradiance distributions of a device according to a comparative example .

[0055] Identical , similar or equivalent elements are marked with the same reference signs in the figures . The figures and the proportions of the elements represented in the figures among each other are not to be considered as true to scale . Rather, individual elements may be oversi zed for better representability and / or comprehensibility . Identical or ef fectively identical components and parts might be described only with respect to the figures where they occur first . Their description is not necessarily repeated in successive figures .

[0056] Figure 1 shows a schematic view of a device 1 according to an exemplary embodiment . For example , the device 1 comprises a sensor 2 and a cover 8 . The sensor 2 may comprise or consist of a light source 3 , a photodiode 4 and a further photodiode 5 . The photodiode 4 and the further photodiode 5 can be arranged on opposing sides of the light source 3 .

[0057] The light source 3 is configured to emit electromagnetic radiation . For example , the light source 3 comprises Lambertian characteristics . This can mean, that the light source 3 is or comprises a Lambertian light source . For example , the light source 3 is or comprises a LED or a laser . In other words , a field of view of the light source 3 can be , for example , at least approximately 60 ° . The photodiode 4 is configured to detect electromagnetic radiation . The further photodiode 5 is configured to detect electromagnetic radiation .

[0058] For example , the light source 3 , the photodiode 4 and the further photodiode 5 are arranged on a carrier 11 , for instance on a common carrier 11 . For instance , the light source 3 , the photodiode 4 and / or the further photodiode 5 are at least partially encapsulated by a molded body 6 . The molded body 6 can be arranged on the side of the carrier 11 , the light source 3 , the photodiode 4 and / or the further photodiode 5 facing the cover 8 . For example, the cover 8 is configured to reflect at least a portion of the electromagnetic radiation emitted and / or generated by the light source 3. In particular, the cover 8 can be configured to reflect the at least one portion of the electromagnetic radiation emitted by the light source 3 to the photodiode 4 and / or to the further photodiode 5. During operation of the device 1, the photodiode 4 and the further photodiode 5 may detect the electromagnetic radiation emitted by the light source 3 and reflected by the cover 8. For example, the cover 8 comprises a diffuse reflectance. This can mean that the electromagnetic radiation impinging on the cover 8 is reflected into a plurality of directions.

[0059] It is possible, that the cover 8 comprises a reflective region 9 or reflective regions 9, 10 which comprise a larger reflectivity than other regions of the cover 8. In particular, the reflective region 9 or the reflective regions 9,10 are arranged on the side of the cover 8 facing the sensor 2. For example, the cover 8 comprises a diffuse reflectance only within the reflective region 9 or the reflective regions 9, 10 comprising the larger reflectivity than the other or remaining regions .

[0060] For example, a reflective pattern is arranged in the reflective region / s 9,10. The reflective pattern may be a white reflective pattern or white reflective sheet, for example. For example, the side of the cover 8 facing the sensor 2 is partially painted with white paint to form or define the reflective region / s 9,10. Alternatively, a reflective pattern or reflective sheet, e.g. a white pattern or white sheet can be partially sticked to the side of the cover 8 facing the sensor 2 to form or define the reflective region / s 9,10. The reflective pattern may comprise a diffuse reflectance, for example.

[0061] The photodiode 4 and the further photodiode 5 each comprise a field of view. For example, the fields of view of the photodiode 4 and the further photodiode 5 are indicated in Figure 1. For instance, the photodiode 4 and the further photodiode 5 comprise different fields of view. It is possible, that the device 1 comprises at least two further photodiodes 5. For example, the fields of view of the photodiodes 4, 5 are pairwise different. It is possible, that the fields of view of the photodiodes 4, 5 are tilted in different directions. It is also possible, that the fields of view of the photodiode 4 and the further photodiode / s 5 do not overlap.

[0062] The field of view of the photodiode 4 can at least approximately correspond to the reflective region 9. Alternatively, it is possible, that the field of view of the photodiode 4 overlaps with the reflective region 9. The field of view of the further photodiode / s 5 can overlap with or correspond to the reflective region 9 and / or to the further reflective region / s 10.

[0063] For instance, the device 1 and / or the sensor 2 comprise an optical element 7. The optical element 7 can be configured to specify, determine or define the field of view of the photodiode 4 and / or the further photodiode 5. In particular, the optical element 7 can tilt the field of view of the photodiode 4 and / or the further photodiode 5. That the field of view of the photodiode 4, 5 is tilted can mean, that a centre of the field of view of the photodiode 4, 5 extends obliquely to a main extension plane of the sensor 2 and / or the carrier 11. For example, in case no force F is applied to the cover 8 of the device 1, a main extension plane of the cover 8 is at least approximately parallel to the main extension plane of the sensor 2.

[0064] For example, the optical element 7 is comprised by the molded body 6. This can mean that the molded body 6 comprises the optical element 7, for instance between the photodiode 4 and / or the further photodiode 5 and the cover 8. It is then possible, that the optical element 7 is formed of the molded body 6 and / or comprises the same material as the molded body 6. For example, the optical element 7 is an optical component, e.g. a tilted surface or a lens, formed of the molded body 6.

[0065] Alternatively or additionally, the optical element 7 can comprise lamellas, which may be arranged above the photodiode 4 and / or the further photodiode 5.

[0066] It is further possible, that the optical element 7 comprises louvers, a multi aperture cover, a lid window and / or an optical component for tilting the fields of view of the photodiode / s 4, 5.

[0067] For example, the device 1 is configured to detect a position, a movement and / or a speed of the force F.

[0068] During operation of the device 1, the light source 3 may emit electromagnetic radiation. The electromagnetic radiation emitted by the light source 3 is, for example, reflected by the cover 8 of the device 1. For instance, the electromagnetic radiation reflected by the cover 8 is detected by the photodiode 4 and / or the further photodiode 5. This can also mean that only a portion or at least a portion of the reflected electromagnetic radiation is detected by the photodiode 4 and / or the further photodiode 5 .

[0069] For example , during operation of the device a force F, in particular a touch force F, is applied to the cover 8 of the device 1 . A position, movement and / or speed of the force F applied to the cover 8 can then be determined by the device 1 . For example , the position, movement and / or speed of the force F applied to the cover 8 are determined by comparing a variation of a signal of the photodiode 4 with a variation of a further signal of the further photodiode 5 .

[0070] Figures 2A and 2B show detectable forces applied to the cover 8 of a device 1 according to an exemplary embodiment . For example , the device 1 is configured for ID measurements ( Figure 2A) or for 2D measurements ( Figure 2B ) of a force F applied to the cover 8 of the device 1 . In other words , with the device 1 a ID resolution or a 2D resolution of the force F can be obtained .

[0071] In particular, the force F can be a touch force , resulting of a force touch, for example . For instance , a position and / or a movement , e . g . a sliding, of the force touch F on the cover 8 can be determined .

[0072] In Figure 3 a schematic sectional view of a device 1 according to an exemplary embodiment is shown . The device 1 shown here di f fers from the device 1 shown in Figure 1 in that the cover 8 does not comprise one or more reflective regions 9 , 10 . However, it is also possible , that the device 1 shown here comprises one or more reflective region / s 9 , 10 . For example , shown here , a force F is applied to the centre of the cover 8 or at least approximately or close to the centre of the cover 8 of the device 1 . The force F can be applied on the side of the cover 8 facing away from the sensor 2 . The applied force F, e . g . a force touch on the cover 8 , may lead to a height variation of the cover 8 . In other words , a distance , in particular a vertical distance between the sensor 2 and the cover 8 changes or varies .

[0073] For instance , a power distribution of the reflected electromagnetic radiation is similar for photodiodes 4 , 5 comprising the same or at least approximately the same distance to the cover 8 of the device 1 . It is possible that a change of the distance between the sensor 2 and the cover 8 results in a change of the intensities detected by the photodiode 4 and the further photodiode 5 .

[0074] A force F applied to the centre of the cover 8 , shown here , may lead to similar changes in the intensity or power distribution of the reflected electromagnetic radiation for each of the photodiodes 4 , 5 .

[0075] Figure 4 shows a schematic sectional view of a device 1 according to a further exemplary embodiment . The embodiment shown here di f fers from the embodiment shown in Figure 3 that the force F is applied closer to an edge of the cover 8 . In other words , in the embodiment shown here , the force F is not applied to the centre of the cover 8 . For instance , the force F is applied to the cover 8 in an area above the photodiode 4 . This may cause a tilt of the cover 8 of the device . For example , a distance between the photodiode 4 and the cover 8 is smaller than a distance between the further photodiode 5 and the cover 8 . The power distribution of the electromagnetic radiation emitted by the light source 3 and reflected by the cover 8 at the photodiode 4 can be larger than at the further photodiode 5. In other words, I(PD1) > I PD2 may be fulfilled, wherein I is the intensity, PD1 is the photodiode 4 and PD2 is the further photodiode 5.

[0076] Figure 5 shows schematic views of structures within the device 1 according to an exemplary embodiment. For example, the structures are or form the optical element 7 of the device 1, which is configured to tilt the field of view of the photodiode / s 4, 5.

[0077] It is possible, shown here, that the photodiode / s 4, 5 are or comprise a CMOS (complementary metal-oxide-semiconductor ) photodetector. In this case, for instance, the optical element is formed of or comprises louvers, for example within the CMOS.

[0078] For example, a lateral spacing d3 between adjacent louvers can be in a range between 1 pm and 20 pm, inclusive, for instance between 3 pm and 10 pm, inclusive, or between and including 4 pm and 7 pm. For example, the lateral spacing d3 between adjacent louvers is approximately 5 pm. However, other lateral spacings are also possible, depending on the desired field of view of the photodiode / s 4, 5 and / or the size of the sensor 2 or the device 1.

[0079] A vertical extension d4 of the louvers can be between 2 pm and 30 pm, inclusive, for example between and including 4 pm and 10 pm or between and including 6 pm and 7 pm.

[0080] For example, the extension d2 indicated in Figure 5 may be between and including 1 pm and 5 pm, for example between 1 pm and 2 pm, inclusive . For instance , the extension dl indicated in Figure 5 is between and including 1 pm and 25 pm, for example between and including 5 pm and 8 pm or between 6 pm and 7 pm, inclusive .

[0081] Figure 6 shows a schematic sectional view of a sensor 2 according to an exemplary embodiment . For example , shown here , the optical element 7 is or comprises a multi aperture cover . The multi aperture cover can be configured to tilt or define the field of view of the photodiode / s 4 , 5 and / or of the light source 3 . The optical element 7 can comprise a transparent or transmissive plate 14 , for example a glass plate . For instance , the multi aperture cover is a multi aperture glass .

[0082] For example , a coating 12 , for instance an upper coating 12 , is partially applied on the side of the transparent or transmissive plate 14 facing the cover 8 . The coating 12 , for instance a lower coating 12 , may also be partially applied on the side of the plate 14 facing away from the cover 8 . For instance , the coating 12 is non-transmissive for the electromagnetic radiation emitted by the light source 3 and / or reflected by the cover 8 . That the coating 12 is non- transmissive can mean that the transmissivity or transparency of the coating is lower than the transmissivity or transparency of the transparent or transmissive plate 14 .

[0083] The plate 14 comprises apertures 13 in regions not covered by the coating 12 , for example . The apertures 13 arranged on the side of the plate 14 facing away from the cover 8 can be referred to as lower apertures 13 . The apertures 13 arranged on the side of the plate 14 facing the cover 8 can be referred to as upper apertures 13 . It is also possible , not shown, that the optical element 7 comprises more than two layers of apertures 13 .

[0084] For example , the lateral extension of the upper apertures 13 is larger than the lateral extension of the lower apertures 13 . Thereby, the upper apertures 13 can overlap with the lower apertures 13 . The upper aperture 13 overlapping with the light source 3 protrudes the lower aperture 13 , overlapping with the light source 3 , laterally on both sides , in particular in directions towards the photodiode 4 and the further photodiode 5 .

[0085] The upper apertures 13 overlapping with the photodiode 4 or the further photodiode 5 protrude the corresponding lower apertures 13 in a direction away from the light source 3 .

[0086] In Figure 7 a schematic sectional view of a sensor 2 according to another exemplary embodiment is shown . The sensor 2 di f fers from the sensor 2 shown in Figure 6 in that the sensor 2 does not comprise a multi aperture cover . Here , the sensor 2 comprises a lid 15 with openings 16 or windows 16 .

[0087] For example , no material of the lid 15 is arranged within the openings 16 . The lid 15 can comprise a lower transmissivity for the electromagnetic radiation emitted and / or generated by the light source 3 than the openings 16 . For instance , the lid 15 is arranged between the photodiode / s 4 , 5 and the light source 3 . In this case , for example , a direct crosstalk between the photodiode / s 4 , 5 and the light source 3 can be prevented or at least reduced . Figures 8A, 8B, 8C and 8D show di f ferent exemplary embodiments of a reflective region 9 or of reflective regions 9 , 10 of a cover 8 of the device 1 . For example , the cover 8 comprises a reflective region 9 and a further reflective region 10 ( Figure 8A) . The reflective region / s 9 , 10 can comprise a circular shape . In particular, the cover 8 comprises the reflective region 9 on the side of the cover facing the sensor 2 . For instance , the cover 8 comprises a higher reflectance in the reflective region 9 than outside the reflective region 9 . The cover 8 may comprise a di f fuse reflectance , for example at least in the reflective region 9 .

[0088] It is also possible , that the cover 8 comprises more than one further reflective region 10 , for example at least two reflective regions 10 or at least three reflective regions 10 ( Figure 8B ) . The reflective region 9 and the further reflective region / s 10 can be arranged spaced apart from each other .

[0089] In Figure 8C a cover 8 is shown, comprising one reflective region 9 . Shown here , the reflective region 9 is ring-shaped, for example .

[0090] Alternatively, the reflective region 9 and the reflective regions 10 can each comprise the shape of a ring sector ( Figure 8D) .

[0091] Figure 9 shows a schematic top view of a sensor 2 according to an exemplary embodiment . The sensor 2 comprises the light source 3 , the photodiode 4 and one further photodiode 5 . The photodiode 4 , the further photodiode 5 and the light source 3 are arranged in line . For instance, the photodiode 4 and the further photodiode 5 are each integrated into a chip 17, 18. The light source 3 is arranged between the chips 17, 18. Additionally or alternatively, not shown, the photodiode 4, the further photodiode 5 and / or the light source 3 can be integrated into one common chip 17.

[0092] The direction or tilt of the field of view of the photodiodes 4, 5 is indicated by the arrow. For a ID resolution of the device 1, shown here, the fields of view of the photodiode 4 and the further photodiode 5 are tilted in opposing directions. In particular, the fields of view of the photodiodes 4, 5 are each tilted in a direction away from the light source 3. For example, the field of views are slightly tilted, for example at most 20°, at most 10°, at most 5° or, for instance, at most 2° with respect to the vertical direction z.

[0093] Figure 10 shows a schematic top view of a sensor 2 according to a further exemplary embodiment. Shown here, the sensor 2 comprises four photodiodes 4, 5. For instance, two photodiodes 4, 5 are arranged on a common chip 17, 18, respectively. For instance, the light source 3 is also integrated into one of the chips 17, 18. It is possible, that the photodiode 4 and the light source 3 are arranged in line with at most one of the further photodiodes 5. Such a configuration enables a 2D resolution of the detection, for example .

[0094] Figure 11 shows a schematic top view of a sensor 2 according to a further exemplary embodiment. The sensor 2 shown in Figure 11 differs from the sensor 2 shown in Figure 10 in that the four photodiodes 4, 5 are arranged on one common chip 17. In other words, the photodiode 4 and the further photodiodes 5 can form an array of photodiodes 4, 5. The array of photodiodes 4, 5 can be arranged laterally to the light source 3.

[0095] Each of the photodiodes 4, 5 comprises a different field of view, for instance with respect to the direction of the field of view. Shown here, in top view, the directions of the field of views change or run clockwise. However, other arrangements are possible as well. In particular, the directions of the fields of view can be arranged such that they are evenly distributed. For example, an angle between adjacent photodiodes 4, 5 is approximately 90°.

[0096] Figure 12 shows a schematic top view of a sensor 2 according to a further exemplary embodiment. The sensor 2 shown in Figure 12 differs from the sensor 2 shown in Figure 11 in that the four photodiodes 4, 5 are arranged on one common chip 17, wherein the light source 3 is integrated into the chip 17 or arranged on the chip 17. For example, the photodiodes 4, 5 surround the light source 3.

[0097] Figure 13 shows a schematic view of a device 1 according to a comparative example. The device 1 comprises a light source 3, a photodiode 4 and a cover 8. With such a device 1 it is only possible to detect one single point force F applied to the cover 8. It is thereby not possible to determine the position of the force F.

[0098] Figures 14A shows a plot of the irradiance distribution of the device 1 according to a comparative example shown in Figure 15A. For example, in the plot, an x cross section (continuous line) and a y cross section (dotted line) of the irradiance at the cover 8 are shown. On the x-axis, the position is shown in pm. The y-axis shows the irradiance Irr in artificial units.

[0099] Figure 14B shows a polar plot of an angular distribution of the electromagnetic radiation emitted by the light source 3. The field of view of the light source 3 indicated here is at least approximately 60°hca and corresponds to the field of view of a Lambertian light source.

[0100] Figure 14C shows a graphical view of the signal detected by the photodiode 4 and the further photodiode 5 shown in Figure 15B. For instance, the detected signal is or corresponds to the electromagnetic radiation emitted by the light source 3 and / or reflected by the cover 8 of the device 1. For example, on the y-axis the photo-current PC is shown in artificial units. On the x-axis, the distance h between the cover 8 and the sensor 2 is plotted in mm.

[0101] The dotted line is the signal detected by the photodiode 4 which is positioned at approximately x = -0.75 mm. The continuous line is the signal detected by the further photodiode 5, which is positioned at approximately x = 0.75 mm. The light source 3 is arranged around x = -1.5. For example, the light source 3, the photodiode 4 and / or the further photodiode 5 are arranged in line, e.g. at the same y position .

[0102] Figure 15A shows a schematic irradiance distribution of a device 1 according to a comparative example.

[0103] In Figure 15A an irradiance distribution of the electromagnetic radiation emitted by the light source 3 on the side of the cover 8 facing the sensor 2 is shown . In particular, the irradiance distribution corresponds to the electromagnetic radiation emitted by the light source 3 and reflected by the cover 8 . For instance , the irradiance distribution of the electromagnetic radiation reflected by the cover 8 on the sensor level is shown . For example , shown here , the distance between the sensor 2 and the cover 8 is 4 mm .

[0104] On the x-axis and on the y-axis , the position is shown in mm . An area Al shown in Figure 15A corresponds to a largest irradiance on the cover 8 . For example , the electromagnetic radiation emitted by the light source 3 is absorbed by the cover 8 in an area A3 . In an area A2 , the irradiance is lower than in the area Al and larger than in the area A3 .

[0105] The light source 3 shown here may be a Lambertian light source , e . g . a LED . A field of view or the FWHM of the light source 3 may then be at least approximately 60 ° .

[0106] Figure 15B shows a schematic irradiance distributions of a device 1 according to a comparative example . In particular, the irradiance distribution shown here can be a cut of the full area or the irradiance distribution shown in Figure 15A. For instance , the irradiance distribution of electromagnetic radiation impinging on the photodiode 4 and / or the further photodiode 5 is shown .

[0107] For instance , the electromagnetic radiation is reflected towards the photodiode 4 and / or the further photodiode 5 from the cover 8 shown in Figure 15A. Here , the photodiode 4 is arranged in an area Bl indicating a large irradiance . The photodiode 5 is arranged in area B3 indicating a low or nearly no irradiance . An area B2 comprises an intermediate irradiance .

[0108] The invention described herein is not limited by the description given with reference to the embodiments . Rather, the invention encompasses any novel feature and any combination of features , including in particular any combination of features in the claims , even i f this feature or this combination is not itsel f explicitly indicated in the claims or embodiments .

[0109] This patent application claims priority from German patent application 10 2024 101 298 . 6 , the disclosure content of which is hereby incorporated by reference .

[0110] References

[0111] 1 device

[0112] 2 sensor

[0113] 3 light source

[0114] 4 photodiode

[0115] 5 further photodiode

[0116] 6 molded body

[0117] 7 optical element

[0118] 8 cover

[0119] 9 reflective region

[0120] 10 further reflective region

[0121] 11 carrier

[0122] 12 coating

[0123] 13 aperture

[0124] 14 plate

[0125] 15 lid

[0126] 16 opening

[0127] 17 chip

[0128] 18 further chip x, y lateral directions z vertical direction

[0129] Al area Al

[0130] A2 area A2

[0131] A3 area A3

[0132] Bl area Bl

[0133] B2 area B2

[0134] B3 area B3

[0135] F force dl extension d2 extension d3 lateral spacing d4 vertical extension

Claims

Claims1. A device (1) , comprising- a sensor (2) with- a light source (3) ,- a photodiode (4) ,- a further photodiode (5) , and- a cover (8) , wherein- the light source (3) is configured to emit electromagnetic radiation, and- the cover (8) is configured to reflect at least a portion of the electromagnetic radiation emitted by the light source (3) to the photodiode (4) and / or to the further photodiode (5) .

2. The device (1) according to the previous claim, wherein the photodiode (4) and the further photodiode (5) are arranged on opposing sides of the light source (3) .

3. The device (1) according to one of the previous claims, wherein the photodiode (4) and the further photodiode (5) comprise different fields of view.

4. The device (1) according to the previous claim, wherein the fields of view of the photodiode (4) and the further photodiode (5) are tilted in different directions.

5. The device (1) according to one of the claims 3 to 4, wherein the fields of view of the photodiode (4) and / or the further photodiode (5) are tilted by an optical element (7) , wherein the optical element (7) comprises louvers, a multi aperture cover, a lid window and / or an optical component.

6. The device (1) according to one of the claims 3 to 5, wherein the fields of view of the photodiode (4) and the further photodiode (5) do not overlap.

7. The device (1) according to one of the previous claims, wherein the photodiode (4) , the further photodiode (5) and the light source (3) are arranged in line.

8. The device (1) according to one of the previous claims, comprising at least two further photodiodes (5) , wherein the photodiode (4) and the light source (3) are arranged in line with at most one of the further photodiodes (5) .

9. The device (1) according to the previous claim, wherein the photodiode (4) and the further photodiodes (5) form an array of photodiodes (4, 5) , the array of photodiodes (4, 5) is arranged laterally to the light source (3) , and the photodiodes (4, 5) in the array of photodiodes (4, 5) comprise different fields of view.

10. The device (1) according to one of the previous claims, wherein the cover (8) comprises a reflective region (9) on the side of the cover (8) facing the sensor (2) , and the cover (8) comprises a higher reflectance in the reflective region (9) than outside the reflective region (9) .

11. The device (1) according to one of the previous claims, wherein the cover (8) comprises a diffuse reflectance.

12. The device (1) according to one of the previous claims, wherein the light source (3) comprises Lambertian characteristics .

13. The device (1) according to one of the previous claims, wherein the device (1) is configured to detect a position, a movement and / or a speed of a force (F) .

14. The device (1) according to claim 10, wherein the cover(8) comprises a further reflective region (10) on the side of the cover (8) facing the sensor (2) , which is arranged spaced apart from the reflective region (9) .

15. A method for operating a device (1) according to one of the claims 1 to 14, wherein- the light source (3) of the sensor (2) emits electromagnetic radiation,- the electromagnetic radiation is reflected by the cover (8) of the device (1) , and- the electromagnetic radiation reflected by the cover (8) is detected by the photodiode (4) and / or the further photodiode (5) .

16. The method for operating a device (1) according to the previous claim, wherein a force (F) is applied to the cover(8) of the device (1) , the method comprising:- determining a position, movement and / or speed of the force(F) applied to the cover (8) .

17. The method for operating a device (1) according to the previous claim, wherein the position, movement and / or speed of the force (F) applied to the cover (8) is determined by comparing a variation of a signal of the photodiode (4) with a variation of a further signal of the further photodiode (5) .

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