A system and method for manufacturing a cross bar device and / or a multi slab device

Abstract

A crossbar array device and a method for manufacturing a crossbar array device. The method comprises providing a first array of first bars. The method comprises providing a second array of second bars crossing and in contact with the first array of first bars. The first array is provided by atomic layer deposition, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or such that of one or more of the first bars at least one property varies along a longitudinal direction of the respective bar(s); and / or the second array is provided by atomic layer deposition, such that one or more of the second bars differs in at least one property from one or more other of the second bars and / or such that of one or more of the second bars at least one property varies along a longitudinal direction of the respective bar(s).

Description

[0001] Title: A system and method for manufacturing a cross bar device and / or a multi slab device

[0002] FIELD OF THE INVENTION

[0003] The present invention relates to the field of semiconductor processing. In particular, the invention relates to the field of manufacturing semiconductor processing substrate devices. More in particular, the invention relates to a method for manufacturing a crossbar array device, a method for manufacturing a multi slab device, a crossbar array device and a multi slab device.

[0004] BACKGROUND

[0005] In manufacturing semiconductor devices, it is known to deposit thin layers on a substrate. Thin film layers of silicon oxide, aluminum and other metals that will become the electronic circuit materials are formed on the substrate. The thin layers are known to be uniformly deposited across the substrate. The substrate with the deposited thin layers deposited thereon can form a semiconductor processing substrate. The substrate is generally positioned on a receptacle, such as a wafer, during processing thereof.

[0006] There are a variety of ways to form these thin films, comprising "sputtering", in which a target material, such as aluminum or other metal, is bombarded with ions, which knocks off atoms and molecules that are then deposited on the wafer surface, "electrodeposition", which is used to form i.a. copper wire layers (copper interconnect), chemical vapor deposition (CVD), in which special gases are mixed to cause a chemical reaction that forms a vapor containing the desired material, and then the molecules generated in the reaction are deposited onto the wafer surface to form a film, and thermal oxidation, in which the wafer is heated to form a silicon oxide film on the wafer surface. Physical vapor deposition (PVD) is another method of fabrication that involves the deposition of material onto the wafer surface through physical processes such as evaporation or sputtering. The method of PVD utilizes a vacuum environment to evaporate or sputter atoms or molecules from a solid source material, which then condenses onto the wafer surface to form a thin film.

[0007] The method of fabrication might involve one or more of the above defined deposition techniques.

[0008] After forming such thin layers, lithography techniques are subsequently applied to the thin films. A photoresist layer is provided on the thin layer and the wafer is exposed using e.g. short wavelength deep ultraviolet radiation projected through a mask. The areas of the photoresist layer that are exposed to the light undergo a structural change, thereby transferring the pattern defined by the mask to the wafer. Finally, the exposed photoresist on the surface layer is dissolved and corresponding sections of the thin film can be removed using etching techniques. The etching can comprise wet etching or dry etching. This forms the circuit pattern for the electronic circuit.

[0009] By first depositing thin layers on a substrate, subsequently applying lithography techniques to the thin layers, and finally etching the exposed areas, a circuit pattern can be formed on the semiconductor processing substrate device. The steps of applying layers and later removing exposed parts of the layers can be cumbersome, time consuming and unsustainable.

[0010] Each of these semiconductor processing steps is generally directed at depositing one layer across the substrate at a time or removing at least a part of such a deposited layer by a step of photolithography followed by etching. For manufacturing a semiconductor processing substrate device with variation in at least one property of the material formed across the surface of the device, different masks with different through -hole patterns and / or different cycles of deposition, lithography and etching can be used during processing thereof. For each variation in a property, a different mask and / or different cycle is required in order to vary said property of the layer of material formed across the surface. Each required mask and / or cycle of deposition entails a separate semiconductor processing step. It is time consuming and cumbersome to vary a property of the to be deposited material across the surface, as it requires at least two subsequent masking steps and / or at least two cycles of deposition, lithography and etching. Also, different masks have to be designed, produced and provided to the processing equipment, which is cumbersome, costly, unsustainable and time inefficient.

[0011] SUMMARY

[0012] It is an object to provide a crossbar array device, a multi slab device, a method for manufacturing a crossbar array device, and a method for manufacturing a multi slab device. More in general, it is an object to provide an improved crossbar array device, multi slab device, and / or method for manufacturing thereof.

[0013] Thereto, according to a first aspect is provided a method for manufacturing a crossbar array device. The method comprises providing a first array of first bars. The first bars can be electrically conductive first bars, optical wave guides and / or temperature conductors or the like. The array of first bars can be provided on a substrate. The substrate can be held on a receptacle. The receptacle can be positioned in a reaction chamber during processing thereof. The substrate can comprise a semiconductor processing substrate, optionally comprising silicon, glass and / or one or more polymers.

[0014] The method comprises providing a second array of second bars crossing and in contact with the first array of first bars. The second bars can be electrically conductive second bars, optical wave guides and / or temperature conductors or the like. The first array of first bars can be in electrical contact, optical contact and / or thermal contact, or the like, with the second array of second bars. The first and second bars can at least partially be electrically conductive. Each of the first array and the second array can comprise at least two respective first or second bars.

[0015] The first array of first bars and the second array of second bars may be provided to form a two-dimensional grid structure. The first bars of the first array may for example be spatially separated from each other. Similarly, the second bars of the second array may for example be spatially separated from each other.

[0016] The first array of bars may for example include, or consist of, N first bars, and the second array of second bars may for example include, or consist of, M second bars. The crossbar array may accordingly form a, e.g. two-dimensional, matrix of M by N unique and distinct crossings. It will be appreciated that N and M are integer numbers larger than zero.

[0017] The first array of first bars and the second array of second bars may be provided so that each crossing is uniquely identifiable and functionally a. The crossings may for example be selectively addressable, such as via external inputs applied to the first bars and the second bars. Each crossing may for example be individually activated or deactivated. The crossings between the first bars and the second bars can for example serve as programmable or fixed connection nodes. The crossings can hence be used to establish electrical connections or implement switching functions, such as for non-volatile memory devices, neuromorphic computing architectures, and signal routing systems.

[0018] The first and / or second array can be provided by atomic layer deposition (ALD). ALD is a precise thin film deposition technique that involves the sequential exposure of the substrate surface to precursor gases, that could be used to deposit material on the substrate. Each precursor can react with the substrate surface in a self-limiting manner, forming a single atomic layer. This process can be repeated multiple times to build up the desired film thickness with excellent control over film composition and thickness uniformity. The ALD can be operated in two manners; a temporal ALD and a spatial ALD. Generally, spatial ALD separates the different gases in space whereas temporal ALD separates the gases in time. Direct atomic layer processing (DALP) comprises atomic layer deposition of materials while controlling the location of deposition, thereby allowing patterning or directly writing materials onto the substrate. Feature dimensions obtainable by DALP can be determined e.g. by a nozzle size of a DALP head. Moving the DALP head and the substrate relative to each other while providing one or more precursors to the substrate allows for depositing an atomic layer of contiguous material along a path on the substrate.

[0019] The first array can be provided by atomic layer deposition, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or such that of one or more of the first bars at least one property varies along a longitudinal direction of the respective bar(s). The second array can be provided by atomic layer deposition, such that one or more of the second bars differs in at least one property from one or more other of the second bars and / or such that of one or more of the second bars at least one property varies along a longitudinal direction of the respective bar(s). It will be appreciated that the at least one property can vary along the longitudinal direction of the respective bar(s) between bar crossings. Each of the first and second bars can be formed out of one or more atomic layer parts of contiguous material. The atomic layer parts of contiguous material forming one of the first and second bars can be supplied to and deposited along a path on the substrate, e.g. by DALP. The path can comprise one or more linear, angular or curved sections. Different paths, along which the first and second bars can be formed, can at least partially comprise different widths. The material can be supplied to the substrate by a material supply unit. The material supply unit can comprise a spatial atomic layer deposition, SALD, head. The material supply unit can comprise a direct atomic layer processing, DALP, head. The DALP head can e.g. be as described in W02020 / 245230A1, incorporated herein by reference in its entirety.

[0020] At least one of the first bars can at least partially be provided in parallel with or in line with one or more other of the first bars. At least one of the second bars can at least partially be provided in parallel with or in line with one or more other of the second bars. At least one of the first bars can be provided having a nonzero angle with respect to one or more other of the first bars. At least one of the second bars can be provided having a nonzero angle with respect to one or more other of the second bars. Each of the bars of an array can at least partially be provided in a plane parallel to the substrate. At least one of the first bars can at least partially engage a part of at least one of the second bars. Each of the first bars can at least partially engage a part of each of the second bars.

[0021] At least one of the first bars can at least partially be provided adjacent to one or more other of the first bars. At least one of the second bars can at least partially be provided adjacent to one or more other of the second bars. Where two or more bars are at least partially mutually adjacent, a local contiguous piece of deposited material can be formed. Where two or more bars are substantially mutually adjacent, a local contiguous piece of deposited material, such as a local coating of deposited material, can be formed. At least one of the first bars can at least partially be provided separated from one or more other of the first bars, e.g. by having a nonzero distance there between. At least one of the second bars can at least partially be provided separated from one or more other of the second bars, e.g. by having a nonzero distance there between. The mutual local distance between at least two of the first or second bars can be smaller than the length of at least one of the bars. At least one of the first bars can extend at least partially transverse to at least one of the second bars. At least one of the second bars can extend at least partially transverse to at least one of the first bars.

[0022] The first aspect for example provides a method for manufacturing a crossbar array device comprising: providing a first array of first bars; and providing a second array of second bars crossing and in contact with the first array of first bars so as to obtain a plurality of distinct crossings, wherein the first array is provided by atomic layer deposition, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or such that of one or more of the first bars at least one property varies along a longitudinal direction of the respective bar(s) between the crossings; and / or wherein the second array is provided by atomic layer deposition, such that one or more of the second bars differs in at least one property from one or more other of the second bars and / or such that of one or more of the second bars at least one property varies along a longitudinal direction of the respective bar(s) between the crossings.

[0023] According to a second aspect is provided a method for manufacturing a crossbar array device. The method comprises providing a first array of first bars. The method comprises providing a plurality of slabs on the first bars by atomic layer deposition. Each of the plurality of slabs can at least partially engage a part of at least one of the first bars. One or more of the slabs differs in at least one property from one or more other of the slabs. The method comprises providing a second array of second bars on the plurality of slabs, such that each of the plurality of slabs is connected to a first bar and to a second bar. Each of the second bars can at least partially engage a part of at least one of the slabs. The slabs can hence be provided at crossings between the first bars and the second bars. The slabs can be formed in a manner similar to the process of providing the first and second bars. Each of the slabs can comprise one or more atomic layer parts. The atomic layer parts of contiguous material forming one of the slabs can be supplied to and deposited along a contiguous area on the substrate. The material can be supplied to the substrate by a material supply unit. The supply unit can comprise a SALD head or DALP head as described above.

[0024] Optionally, at least one of the first array or the second array is provided by atomic layer deposition, e.g. by DALP.

[0025] Optionally, at least one of the first array or the second array is provided by atomic layer deposition, e.g. by DALP, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or one or more of the second bars differs in at least one property from one or more other of the second bars. If at least one property between the first bars and between the second bars differs, the first bars can differ in the same property or in different properties as the second bars.

[0026] Optionally, at least one of the first array or the second array is provided by atomic layer deposition, e.g. by DALP, such that of one or more of the first bars and / or the second bars at least one property varies along a longitudinal direction of the respective bar(s). The transition between the difference in each property can be gradual or instantaneous. The variation in each property can fluctuate and / or be intermittently distributed along the longitudinal direction of the respective bar. It will be appreciated that variation of the at least one property along the longitudinal direction of the respective bar(s) is particularly established between crossings. Hence, the at least one property can vary from one crossing to another.

[0027] Optionally, the at least one property is or comprises a geometry of the respective bar(s), such as a thickness, width, structure, texture, or cross-sectional shape of the respective bar(s).

[0028] Optionally, the atomic layer deposition comprises spatial atomic layer deposition or temporal atomic layer deposition.

[0029] Optionally, the atomic layer deposition comprises direct atomic layer processing.

[0030] Optionally, at least one of the first bars and / or at least one of the second bars is electrically conductive, optically conductive and / or thermally conductive. Optionally, at least one of the first bars is electrically conductive and at least one of the second bars is electrically conductive and in electrically conductive contact with the electrically conductive at least one of the first bars, and / or wherein at least one of the first bars is optically conductive and at least one of the second bars is optically conductive and in optically conductive contact with the optically conductive at least one of the first bars, and / or wherein at least one of the first bars is thermally conductive and at least one of the second bars is thermally conductive and in thermally conductive contact with the thermally conductive at least one of the first bars.

[0031] Optionally, the at least one property comprises one or more of thickness and chemical composition. The thickness can comprise the overall layer thickness of the respective bar and / or slab. The thickness can also comprise the atomic layer part thickness of the several parts that are used in forming the respective bar and / or slab. The chemical composition can comprise the identity, arrangement, and / or ratio of the chemical elements making up the material forming the respective bar and / or slab.

[0032] Optionally, the first and / or second bars are formed by atomic layer deposition, such as by DALP, of individual lines of the material. The lines can comprise straight, angular and / or curved sections. One bar can be formed out of one or more contiguous lines of material, wherein at least one of the lines comprises material deposited by ALD. The lines can be provided at least partially in parallel with and / or on top of each other. The lines can be deposited on the surface of the substrate.

[0033] Optionally, at least one of the first bars, the second bars and the slabs can e.g. be provided by atomic layer deposition and / or etching of at least two layers of material that partly overlap one another laterally as described in W02023079030, incorporated herein by reference in its entirety.

[0034] Optionally, the first and / or second bars are formed by atomic layer deposition of a, e.g. contiguous, layer of material and selectively etching away, such as by DALP, the layer between the lines, such that the individual bars remain. The layer of material can cover a larger surface area of the substrate than the to be formed first and second bars. Lithography can be applied to the layer to be etched away prior to the step of etching said layer between the first and second bars away. It will be appreciated that the layer, prior to etching away the layer between the lines, can have one or more properties varying in one or more directions of the layer. The selectively etching away of the layer of material can comprise atomic layer etching (ALE). Optionally, the DALP head can be used to achieve such selective etching. Moving the DALP head and the substrate relative to each other while providing one or more etchants to the substrate allows for selective etching along a path.

[0035] Optionally, the method comprises providing separated slabs by atomic layer deposition, such as by DALP, of individual slabs. The atomic layer parts of contiguous material forming one of the slabs can be deposited on a contiguous area on the substrate surface that is arranged away from the other slabs.

[0036] Optionally, the method comprises providing separated slabs by atomic layer deposition of a layer of material and selectively etching away the layer between slabs, such as by DALP, such that the individual slabs remain. The layer of material can cover a larger surface area of the substrate than the to be formed slabs. It will be appreciated that the layer, prior to etching away the layer between slabs, can have one or more properties varying in one or more directions of the layer.

[0037] Optionally, the method comprises providing separated slabs by a traditional deposition method, such as PVD, e-beam deposition, and / or CVD, of a layer of material and selectively etching away the layer between slabs, such as by DALP.

[0038] The width of the first and second bars is preferably smaller than 5 mm, more preferably smaller than 500 pm, more preferably smaller than 450 pm, and even more preferably smaller than 100 pm. At each crossing of one of the first bars with one of the second bars, an overlap area between a first bar and a second bar may be smaller than 25 mm2, more preferably smaller than 0.25 mm2, more preferably smaller than 0.2 mm2, or even more preferably smaller than 0.01 mm2. The height of the first and second bars is preferably smaller than 10 pm, more preferably smaller than 1 pm, and even more preferably smaller than 100 nm. The length and / or width of the slabs is preferably smaller than 100 mm, more preferably smaller than 10 mm, and even more preferably smaller than 1 mm, such as smaller than 500 pm, or even smaller than 100 pm. The height of the slabs is preferably smaller than 10 pm, more preferably smaller than 1 pm, and even more preferably smaller than 100 nm. Optionally, using lithography, the length and / or width dimensions of the first and second bars and the slabs can be smaller than 5 mm, such as smaller than 100 pm, or even smaller than 200 nm. When using DALP, the dimensions of the first and second bars and the slabs can preferably be smaller than 5 mm, such as smaller than 500 pm or smaller than 450 pm, such as about 350 pm, although even smaller dimensions can be envisaged, e.g. on the basis of nozzle size. The first and second bars and the slabs, when using DALP, can be even smaller than 10 pm, such as smaller than 2 pm, or even smaller than micron size, if DALP is used in combination with deposition and / or etching of layers that partly overlap, such as described in W02023079030, incorporated herein by reference in its entirety.

[0039] According to a third aspect is provided a method for manufacturing a multi slab device. The method comprises providing a substrate. The method comprises providing a plurality, particularly a two-dimensional array, of slabs on the substrate by atomic layer deposition. One or more of the slabs differs in at least one property from one or more other of the slabs. Each of the slabs may be distinct.

[0040] Optionally, the method comprises providing separated slabs by atomic layer deposition, such as by DALP, of individual slabs.

[0041] Optionally, the method comprises providing separated slabs by atomic layer deposition of a layer of material and selectively etching away the layer between slabs, such as by DALP, such that the individual slabs remain.

[0042] Optionally, the at least one property comprises one or more of thickness and chemical composition.

[0043] Optionally, the atomic layer deposition comprises spatial atomic layer deposition or temporal atomic layer deposition.

[0044] Optionally, the atomic layer deposition comprises direct atomic layer processing.

[0045] According to a fourth aspect is provided a crossbar array device. The crossbar array device can be manufactured using the method as described. The crossbar array device comprises a first array of first bars. The crossbar array device comprises a second array of second bars crossing and in contact with the first array of first bars, for example to obtain a plurality of distinct crossings. One or more of the first bars differs in at least one property from one or more other of the first bars and / or one or more of the second bars differs in at least one property from one or more other of the second bars. Alternatively, or additionally, of one or more of the first bars and / or the second bars at least one property varies along a longitudinal direction of the respective bar(s) between the crossings.

[0046] Optionally, one or more of the first bars can have a different thickness than one or more other of the first bars. One or more of the second bars can have a different thickness than one or more other of the second bars. One or more of the first bars can have a different chemical composition than one or more other of the first bars. One or more of the second bars can have a different chemical composition that one or more other of the second bars. Of one or more of the first bars a thickness can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the second bars a thickness can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the first bars a chemical composition can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the second bars a chemical composition can vary along a longitudinal direction of the respective bar(s), particularly between crossings.

[0047] According to a fifth aspect is provided a crossbar array device. The crossbar array device can be manufactured using the method as described. The crossbar array device comprises a first array of first bars. The crossbar array device comprises a plurality of slabs on the first bars. One or more of the slabs differs in at least one property from one or more other of the slabs. The crossbar array device comprises a second array of second bars on the plurality of slabs, such that each of the plurality of slabs is connected to a first bar and to a second bar. One or more of the first bars can differ in at least one property from one or more other of the first bars and / or one or more of the second bars can differ in at least one property from one or more other of the second bars. Alternatively, or additionally, of one or more of the first bars and / or the second bars at least one property can vary along a longitudinal direction of the respective bar(s), particularly between crossings.

[0048] Optionally, one or more of the first bars can have a different thickness than one or more other of the first bars. One or more of the second bars can have a different thickness than one or more other of the second bars. One or more of the first bars can have a different chemical composition than one or more other of the first bars. One or more of the second bars can have a different chemical composition that one or more other of the second bars. Of one or more of the first bars a thickness can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the second bars a thickness can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the first bars a chemical composition can vary along a longitudinal direction of the respective bar(s) particularly between crossings. Of one or more of the second bars a chemical composition can vary along a longitudinal direction of the respective bar(s), particularly between crossings.

[0049] Optionally, one or more of the slabs can have a different thickness than one or more other of the slabs.

[0050] Optionally, one or more of the slabs can have a different chemical composition than one or more other of the slabs.

[0051] Optionally, at least one of the first bars and / or at least one of the second bars is electrically conductive, optically conductive and / or thermally conductive.

[0052] Optionally, one or more of the first bars can have a different electrical conductive, optical conductivity and / or thermal conductivity than one or more other of the first bars. One or more of the second bars can have a different electrical conductive, optical conductivity and / or thermal conductivity than one or more other of the second bars. Of one or more of the first bars a electrical conductive, optical conductivity and / or thermal conductivity can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Of one or more of the second bars a electrical conductive, optical conductivity and / or thermal conductivity can vary along a longitudinal direction of the respective bar(s), particularly between crossings. Optionally, at least one of the first bars is electrically conductive and at least one of the second bars is electrically conductive and in electrically conductive contact with the electrically conductive at least one of the first bars, and / or wherein at least one of the first bars is optically conductive and at least one of the second bars is optically conductive and in optically conductive contact with the optically conductive at least one of the first bars, and / or wherein at least one of the first bars is thermally conductive and at least one of the second bars is thermally conductive and in thermally conductive contact with the thermally conductive at least one of the first bars.

[0053] Optionally, one or more of the first bars and / or one or more of the second bars comprises an electrically conducting material, such as a metal, a metal oxide and / or a metal nitride.

[0054] Optionally, one or more of the slabs comprises an electrically conducting material, or a dielectric, such as an oxide.

[0055] Optionally, each of the first bars is in, e,g electrical, contact with each of the second bars.

[0056] Optionally, each of the first bars is in contact with each of the second bars via a slab of the plurality of slabs.

[0057] Optionally, the first bars extend transverse to the second bars.

[0058] Optionally, each first bar and / or each second bar is connected, e.g. electrically connected, to a contact pad.

[0059] Optionally, the first array is provided on a substrate. The first bars can at least partially be provided on the substrate. The substrate can be held on a receptacle. The receptacle can be positioned in a reaction chamber during processing thereof.

[0060] Optionally, the crossbar array device comprises an array of thermocouples, Schottky barriers, capacitors, impedances, and / or is used in inverters, motor drives, power supplies, impedance matching means, coupling means, filtering means, sensing means, impedance-based cell analysis means, reconfigurable intelligent surfaces, synaptic weights, multi type memory networks, memristor, RRAM, MRAM and / or Josephson junctions. According to a sixth aspect is provided a multi slab device. The multi slab device can be manufactured using the method as described. The multi slab device comprises a substrate. The multi slab device comprises a plurality of slabs on the substrate, particularly arranged in a two-dimensional array. One or more of the slabs differ in at least one property from one or more other of the slabs. The multi slab device can e.g. comprise one or more flat lenses and / or hyperspectral filters.

[0061] Optionally, one or more of the slabs can have a different thickness than one or more other of the slabs. Alternatively, or additionally, one or more of the slabs can have a different chemical composition than one or more other of the slabs.

[0062] Optionally, one or more of the slabs can be formed of multiple layers of deposited material, such as a combination of multiple layers of electrically conductive, semi-conductive and / or insulating material. The slabs can be coated by a continuous layer of material, wherein the coating can comprise the same or different material(s) compared to the slab material(s).

[0063] It will be appreciated that any of the aspects, features and options described in view of any of the methods for manufacturing a crossbar array device and for manufacturing a multi slab device apply equally to any of the crossbar array device and the multi slab device, and vice versa. It will also be clear that any one or more of the above aspects, features and options can be combined.

[0064] BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Embodiments of the present invention will now be described in detail with reference to the accompanying drawings in which:

[0066] Figures 1A and IB show illustrations of a schematic representation of an example of a side view of an apparatus for manufacturing semiconductor processing substrate devices;

[0067] Figures 2A and 2B show illustrations of a schematic representation of an example of a top view of a crossbar array device;

[0068] Figures 3 A and 3B show illustrations of schematic representations of examples of a side view of a crossbar array device; Figures 4A and 4B show illustrations of a schematic representation of an example of a top view of a crossbar array device;

[0069] Figures 5A and 5B show illustrations of a schematic representation of an example of a multi slab device;

[0070] Figure 6 shows an exemplary flow chart of a method for manufacturing a crossbar array device;

[0071] Figure 7 shows an exemplary flow chart of a method for manufacturing a crossbar array device; and

[0072] Figure 8 shows an exemplary flow chart of a method for manufacturing a multi slab device.

[0073] DETAILED DESCRIPTION

[0074] Figures 1A and IB show illustrations of a schematic representation of an example of a front view of an apparatus 1 for manufacturing semiconductor processing substrate devices. The semiconductor processing substrate devices in this example comprise a semiconductor substrate 2. A crossbar array device 20 and / or a multi slab device 34 can be provided on the substrate 2. The crossbar array device 20 and / or the multi slab device 34 can comprise the substrate 2. The apparatus 1 comprises a receptacle 4 and a material supply unit 8. The receptacle 4 and the material supply unit 8 are in this example housed in a housing 10. The receptacle 4 is configured for holding the semiconductor substrate 2, the crossbar array device 20 and / or the multi slab device 34 thereon. In Figures 1A and IB the semiconductor substrate 2 is shown to be held on the receptacle 4. It will be appreciated that the crossbar array device 20 and / or the multi slab device 34 can alternatively or additionally be held on the receptacle 4.

[0075] The material supply unit 8 is configured for supplying a material 14 to a surface 12 of the substrate 2, such that the material 14 is deposited on the surface 12 of the substrate 2. The material 14 can for example comprise an electrically conducting material, semiconducting material or a dielectric. The electrically conducting material can e.g. comprise a metal, a metal oxide and / or a metal nitride. The dielectric can e.g. comprise an oxide. The material supply unit 8 can be configured for supplying a plurality of, e.g. different, materials 14 to the surface 12 of the substrate 2. The material 14 can be held in a material supply container arranged in fluid communication with the material supply unit 8. The material 14 can comprise a solid, a liquid and / or a gas. The material supply unit 8 is configured for, when the material 14 is directed to the substrate 2, depositing an atomic layer on the surface 12 of the substrate 2. The material 14 can be arranged to interact with the surface 12 of the substrate 2 upon deposition of the material 14 on the substrate 2.

[0076] The material supply unit 8 is in this example configured for directing the material 14 to the surface 12 of the substrate 2. The material supply unit 8 in this example is embodied as an atomic layer deposition device. The material supply unit 8 can comprise a DALP head. The material supply unit 8 can comprise a SALD head. The material supply unit 8 can be configured for depositing an atomic layer formed by the material 14 on the surface 12 of the substrate 2. The material supply unit 8 can supply a precursor to the surface 12 of the substrate 2. In this example, the material supply unit is configured to supply a first precursor and a second precursor to the substrate. In this example, the first and second precursors are gaseous. Here, a first nozzle of the supply unit 8 supplies the first precursor, and a second nozzle of the supply unit 8 supplies the second precursor. A third nozzle may be provided to supply a purge gas to the substrate. The first nozzle can first supply the first precursor to the substrate to adsorb onto the substrate. Next, a purge gas may be supplied to purge non-adsorbed gas from the surface of the substrate. Next, the second nozzle can supply the second precursor to the substrate to react with the adsorbed first precursor. Alternatively or additionally, the first and second nozzles can respectively supply at least a portion of the first precursor and at least a portion of the second precursor simultaneously to the substrate. The first and second nozzles can respectively supply the at least a portion of the first precursor to a different part of the substrate surface than the at least a portion of the second precursor.

[0077] The material supply unit 8 and the receptacle 4 can be movable relative to each other. Hence, it is possible that the supply unit 8 deposits the atomic layer on different positions on the substrate 2. The material supply unit 8 is in this example configured to move from a relative first position in Figure 1A to a relative second position in Figure IB. Alternatively, or additionally, the receptacle 4 may be configured to move. The precursors are in Figure 1A directed to a first portion 15A of the surface 12 of the substrate 2, and in Figure IB the precursors are directed to a second portion 15B of the surface 12 of the substrate 2. Directing the precursors to the first portion 15A of the surface 12 of the substrate 2, causes a first atomic layer part 17A to be formed due to the precursors being supplied to the first portion 15A of the substrate 2. Subsequently directing the precursors to the second portion 15B of the surface 12 of the substrate 2, causes a second atomic layer part 17B to be formed due to the precursors being supplied to the second portion 15B of the substrate 2.

[0078] The first atomic layer part 17A and the second atomic layer part 17B can at least partially be provided contiguous with respect to each other or at least partially provided separated from each other. The material supply unit 8 is configured to directly form first and second atomic layer parts 17A,17B onto the surface 12 of the substrate 2, e.g. by enabling a reaction therewith. The reaction can comprise at least one of a chemical reaction and establishing an atomic bond. The first and second atomic layer parts 17A,17B can together form a part of a pattern.

[0079] First and second parts of the pattern can differ in at least one property from each other. The at least one property can e.g. comprise a width, thickness, chemical composition, electrical conductivity, optical conductivity, thermal conductivity, or the like. The thickness of a part of the pattern can be modified by providing a plurality of atomic layers on top of each other. A chemical composition of parts of the pattern can e.g. be modified by providing different precursors to different parts of the pattern. The pattern can comprise bars 22,24, slabs 32 or other shapes. The plurality of atomic layer parts can together form the pattern deposited on the substrate 2. The pattern on the substrate 2 can comprise a crossbar array device 20 and / or a multi slab device 34. The atomic layer deposition can be a continuous process in which a supply spot provided by the material supply unit 8 is continuously moved across the surface 12 of the substrate 2. The atomic layer deposition can comprise a plurality of separate process steps, each process step itself comprising continuously moving the supply spot provided by the material supply unit 8 across the surface 12 of the substrate 2.

[0080] The receptacle 4 and the material supply unit 8 can be configured to move with respect to each other for depositing the first and second atomic layer parts 17A,17B directly onto the surface 12 of the substrate 2. The movement can be controlled using a controller.

[0081] The apparatus 1 can further comprise a temperature control unit, which is not shown, configured for measuring and optionally adjusting the temperature in the housing 10.

[0082] Figures 2A and 2B show illustrations of a schematic representation of an example of a top view of the crossbar array device 20. The crossbar array device 20 can be manufactured using for example the apparatus 1 according to Figures 1A and IB and / or the method described in view of Figure 6. The crossbar array device 20 comprises first bars 22 and second bars 24. Here, the first and second bars 22,24 are shown as longitudinal beams. Each of the first and second bars 22,24 is in this example formed in a straight piece. It will be appreciated that one or more of the first and second bars 22,24 can comprise a different shape, such as at least partially curved and / or angular. The term ‘bar’ should in this context be interpreted as comprising a beam and / or rod that has at least partially a straight, curved and / or angular shape. The length of the first and second bars 22,24 is preferably smaller than 100 mm, more preferably smaller than 10 mm, and even more preferably smaller than 1 mm. The width of the first and second bars 22,24 is preferably smaller than 5 mm, more preferably smaller than 500 pm, and even more preferably smaller than 100 pm. The height of the first and second bars 22,24 is preferably smaller than 10 pm, more preferably smaller than 1 pm, and even more preferably smaller than 100 nm.

[0083] The first bars and the second bars 22,24 are arranged to form a grid structure in which the first bars 22 and the second bars 24 cross each other, so as to create an two-dimensional array of unique and distinct crossings 25. At each crossing 25, a first bar 22 of the first array crosses over a second bar 24 of the second array, or vice versa. Hence, at each crossing, a functional connection between a first bar and a second bar can be made. Here, the first bars 22 of the first array do not cross each other. The second bars 24 of the second array neither cross each other in this example. Here, the first array has three first bars 22, and the second array has three second bars 24, so as to provide nine individually addressable crossings 25 of the crossbar array device 20. It will be appreciated that this is merely an example and that other configurations are also possible.

[0084] Each of the first and / or second bars can be made by atomic layer deposition, such as by DALP. Each bar can comprise a plurality of atomic layers deposited one on top of the other.

[0085] Each of the first and second bars 22,24 is in this example at least partially made from an electrically conducting material, such as a metal, a metal oxide and / or a metal nitride. Here, the first bars 22 are electrically conductive first bars 22 and the second bars 24 are electrically conductive second bars 24. The electrically conductive first bars 22 are arranged in a first array 26, and the electrically conductive second bars 24 are arranged in a second array 28. In this example, the first array 26 comprises three first bars 22A, 22B and 22C and the second array 28 comprises three second bars 24A, 24B and 24C. It will be appreciated that the first and second arrays 26, 28 can each comprise two of the respective bars or more than three of the respective bars. The second array 28 of electrically conductive second bars 24 is positioned such that it crosses and is in electrical contact with the first array 26 of electrically conductive first bars 22. Here, the first bars 22 extend transverse to the second bars 24. Each of the first bars 22 is in this example in contact, here in electrical contact, with each of the second bars 24. It will be appreciated that alternatively or additionally at least one of the first bars 22 and the second bars 24 can be made from a semiconducting material, a thermally conducting material, an optically conducting material, a dielectric material and / or an insulating material, or the like. The contact between each of the first bars 22 and each of the second bars 24 can be dependent on the properties of the type of material of the respective bars that are engaging with each other.

[0086] In Figures 2A and 2B, one of the first bars 22A differs in one property from the two other of the first bars 22B and 22C. The second bars 24A, 24B and 24C all have the same properties in these examples. In the Figures, the objects having the same pattern fill comprise the same properties. The objects having a different pattern fill differ in at least one property from each other. Alternatively or additionally, one or more of the second bars 24 can differ in at least one property from one or more other of the second bars 24. Although not shown in Figures 2A and 2B, the properties of at least one of the first bars 22 can be the same as the properties of at least one of the second bars 24. The at least one property can e.g. comprise geometry, such as thickness, and / or chemical composition.

[0087] In the example of Figure 2B, each first bar 22 and each second bar 24 is electrically connected to at least one contact pad 30. Alternatively, each first bar 22 or each second bar 24 can be electrically connected to one or more of the contact pads 30. In Figure 2A, the example of the crossbar array device 20 does not comprise these contact pads 30. The contact pads 30 can be configured for electrically connecting each of the first bars 22 and / or each of the second bars 24 to further electrically conductive components, such as components comprised in an electrical circuit. Here, each first bar 22 and each second bar 24 is positioned on top of the contact pads 30. At least one of the contact pads 30 can be positioned on top of at least one of the first bars 22 and second bars 24. Each contact pad 30 is in this example electrically connected at an end of each of the respective first bars 22 and second bars 24. In this example, each of the first and second bars 22,24 is electrically connected to two of the contact pads 30. It will be appreciated that the contact pads 30 can be electrically connected to at least one of the first bars 22 and second bars 24 at a different position along said bar. According to an embodiment at least one of the first and second bars 22,24 can be electrically connected to only one of the contact pads 30, or more than two contact pads.

[0088] In the example of Figure 2 A, the second array 28 of second bars 24 is positioned on top of the first array 26 of first bars 22. In the example of Figure 2B, two of the first bars 22 of the first array 26 are positioned on top of the second bars 24 of the second array 28, whereas one first bar 22 is positioned below the second bars 24. Alternatively, all of the first bars 22 can be positioned below the second bars 24.

[0089] The crossbar array device 20 can comprise an array of thermocouples, e.g. at crossings 25 of the first and second bars 22,24. The crossings 25 of the first and second bars 22,24, where on at least one of the crossings 25 a thermocouple can be formed, are indicated by dashed circles in Figure 2A. The crossbar array device 20 can further comprise an array of Schottky barriers, capacitors, or impedances, and could e.g. be used in inverters, motor drives, power supplies, impedance matching means, coupling means, filtering means, sensing means, impedance-based cell analysis means, reconfigurable intelligent surfaces, synaptic weights, multi type memory networks, memristor devices, RRAM devices, MRAM devices and / or Josephson junctions.

[0090] Figures 3 A and 3B show illustrations of schematic representations of examples of a side view of the crossbar array device 20. The crossbar array device 20 can be manufactured using for example the apparatus 1 according to Figures 1A and IB and / or the method described in view of Figure 6. The crossbar array device 20 of Figure 3A or Figure 3B can be at least partially the same as the crossbar array device 20 of Figures 2A and / or 2B.

[0091] In Figure 3A, each one of the first bars 22A, 22B and 22C differs in one property from the other first bars 22A, 22B and 22C. The first bars 22A, 22B and 22C each differ in this example in the same property, e.g. the thickness t. A thickness tl, t2 and t3 of each of the respective first bars 22A,22B,22C is different. Thereto, each of the bars 22A, 22B, 22C can be made by applying a different number of atomic layers to the substrate. In this example, a first thickness tl is smaller than a second thickness t2, and the second thickness t2 is smaller than a third thickness t3. It will be appreciated that the bars can each differ in at least one different property. The term ‘thickness’ is defined herein as the height in Z- direction of said bar when viewed in the X-Z plane as indicated by tl, t2 and t3 in Figures 3A and 3B. Each of the first bars 22A,22B,22C can alternatively, or additionally, differ in their respective chemical composition. Thereto, one or more of the bars 22A, 22B, 22C can be made by applying a different material, e.g. one or more different precursors, to the substrate In this side view, only the side of one of the second bars 24C is shown. In Figure 3A, the one of the second bars 24C has the same properties as the other ones of the second bars 24A and 24B. It will be appreciated that the one of the second bars 24C can differ in at least one property from the two other of the second bars 24A and 24B. In Figure 3B, each one of the first bars 22A, 22B and 22C has the same properties as the other first bars 22A, 22B and 22C. All of the first bars 22A, 22B and 22C have in this example the same thickness t2. Also, the first bars 22A, 22B and 22C have in this example the same chemical composition. Here, a thickness of the one of the second bars 24C varies along a longitudinal direction, in this example along the X-direction, of the respective second bar 24C. The thickness of the second bar 24C particularly varies between crossings 25 where the second bar 24C crosses with the first bars of the first array. Hence, the thickness of the second bars 24C varies from one crossing 25 to another. The second bar 24C comprises at a first end a fourth thickness t4 and at a second end a fifth thickness t5. The thickness of the second bar 24C varies in this example gradually between the fourth thickness t4 and the fifth thickness t5. The fifth thickness t5 is larger than the fourth thickness t4. The thickness can be varied by providing successively atomic layers of different lengths on top of each other. Here, for each point along the X-axis of the respective second bar 24C, the thickness varies proportional to the distance travelled in longitudinal direction of said second bar. Alternatively, the variation of the thickness of the respective second bar can fluctuate and / or be more irregularly distributed along the longitudinal direction of said bar.

[0092] The other second bars 24A and 24B have in this example the same thickness variation along their longitudinal direction as the second bar 24C. It will be appreciated that one or more of the first bars 22A,22B,22C can also comprise a varying thickness. Each one of the first and / or second bars 22,24 can differ in their respective chemical composition. The chemical composition can vary, for one or more of the first and / or second bars 22,24, along a longitudinal direction of the respective bar(s). Thereto, atomic layers of different chemical composition can be deposited along the length of the respective bar(s). Atomic layers of different chemical composition and different lengths on top of each other can be deposited along the length of the respective bar(s).

[0093] Figures 4A and 4B show illustrations of a schematic representation of an example of a top view of the crossbar array device 20. The crossbar array device 20 can be manufactured using for example the apparatus 1 according to Figures 1A and IB and / or the method described in view of Figure 7. The crossbar array device 20 of Figure 4A or Figure 4B can be at least partially the same as the crossbar array device 20 according to Figures 2A, 2B, 3A and / or 3B. The crossbar array device 20 of Figures 4A and 4B comprises the first array 26 of first bars 22 and the second array 28 of second bars 24. In Figure 4B, the first array 26 of first bars 22 is provided on the substrate 2. The first bars 22 are in Figure 4A not provided on the substrate 2. In this example, the first bars 22 and the second bars 24 are at least partially made from an electrically conducting material. Here, the first bars 22 are electrically conductive first bars 22 and the second bars 24 are electrically conductive second bars 24. It will be appreciated that alternatively or additional at least one of the first bars 22 and the second bars 24 can be made from a semiconducting material, a thermally conducting material, an optically conducting material, a dielectric material and / or an insulating material, or the like. The contact between each of the first bars 22 and each of the second bars 24 can be dependent on the properties of the type of material of the respective bars that are engaging with each other.

[0094] In Figures 4A and 4B, the crossbar array device 20 comprises in this example a plurality of slabs 32, wherein each slab 32 is arranged between one of the first bars 22 and one of the second bars 24. Here, the slabs 32 comprise an electrically conducting material, or a dielectric, such as an oxide. In this example, the slabs 32 are arranged on the first array 26 of first bars 22, and the second array 28 of second bars 24 are arranged on the slabs 32. Each of the plurality of slabs 32 is in this example connected, such as electrically connected, to one of the first bars 22 and to one of the second bars 24. Here, each of the first bars 22 is at least partially in contact with each of the second bars 24 via one slab 32A,32B of the plurality of slabs 32. It will be appreciated that alternatively or additionally at least one of the slabs 32 can be made from a semiconducting material, a thermally conducting material, an optically conducting material and / or an insulating material, or the like. The contact between each of the slabs 32 and the respective ones of the first bars 22 and the second bars 24 connected thereto, can be dependent on the properties of the type of material of the respective bars and slabs that are engaging with each other. The length and / or width of the slabs 32 is preferably smaller than 100 mm, more preferably smaller than 10 mm, and even more preferably smaller than 1 mm. The height of the slabs 32 is preferably smaller than 10 pm, more preferably smaller than 1 pm, and even more preferably smaller than 100 nm.

[0095] Each of the first bars 22 at least partially engages a part of one of the slabs 32. Each of the slabs 32 at least partially engages a part of one of the second bars 24. Thereto, in this example, one slab 32 is provided at each crossing of first and second bars 22,24. It will be appreciated that one slab 32 can be electrically connected to more than one of the first bars 22 and / or more than one of the second bars 24 instead. One of the slabs 32A differs in this example in one property from the other slabs 32B. The property can e.g. comprise thickness or chemical composition. It will be appreciated that the slab 32A can differ from the other slabs 32B in more than one property. More than one of the slabs 32 can differ in at least one property from the other slabs.

[0096] Figures 5A and 5B show illustrations of a schematic representation of an example of the multi slab device 34. The multi slab device 34 can be manufactured using for example the apparatus 1 according to Figures 1A and IB and / or the method describedin view of Figure 8. The multi slab device 34 comprises the substrate 2 and the plurality of slabs 32. The plurality of slabs 32 is arranged on the substrate 2, here in a two-dimensional array. Each of the slabs can be made by atomic layer deposition, such as by DALP. Each slab can comprise a plurality of atomic layers deposited one on top of the other. One or more of the slabs 32 differ in at least one property from one or more other slabs. Each of the slabs 32 is preferably functionally discrete.

[0097] Figure 5 A shows a top view of the multi slab device 34. In this example, two slabs 32A differ in one property from the other slabs 32B. Here, the two slabs 32A differ in chemical composition from the other slabs 32B. It will be appreciated that one slab or more than two slabs can differ in one property from the other slabs. At least one of the slabs 32 can also comprise a different thickness with respect to the other slabs. The different thickness can be made by applying a different number of atomic layers on top of each other to the substrate.

[0098] Figure 5B shows a side view of the multi slab device 34. In this side view example, only three slabs 32A, 32B and 32C are shown. It will be appreciated that the multi slab device 34 comprises additional slabs 32 that are not shown here due to the side view perspective. Each of the three shown slabs 32A, 32B and 32C differs in this example in one property from the other slabs 32A, 32B and 32C. Here, the three slabs 32A,32B,32C differ in thickness from each other. In this example, the three slabs 32A,32B,32C hence differ in the same property, whereas it will be appreciated that the slabs 32A,32B,32C can alternatively, or additionally, differ in different properties. The thickness tl, t2 and t3 of each of the respective slabs 32A,32B,32C is different. In this example, the first thickness tl is smaller than the second thickness t2, and the second thickness t2 is smaller than the third thickness t3. It will be appreciated that at least one of the slabs 32A,32B,32C can also differ in chemical composition. At least one of the slabs 32A,32B,32C can e.g. comprise one or more flat lenses and / or hyperspectral filters.

[0099] Figure 6 shows an example of a flow chart of a method 100 for manufacturing the crossbar array device 20. The method 100 can be performed using for example the apparatus 1 of Figures 1A and IB, e.g. for manufacturing the crossbar array device 20 according to Figures 2A, 2B, 3A and / or 3B. In a first step 102, the method 100 comprises providing the first array 26 of first bars 22. The first array 26 can be provided in step 102 by atomic layer deposition, such that one or more of the first bars 22 differs in at least one property from one or more other of the first bars 22 and / or such that of one or more of the first bars 22 at least one property varies along a longitudinal direction of the respective bar(s).

[0100] The second array 28 of second bars 24 is provided in step 104. The second array 28 of second bars 24 is provided in step 104 such that it crosses and is in contact with the first array 26 of first bars 22. The second array 28 can be provided in step 104 by atomic layer deposition, such that one or more of the second bars 24 differs in at least one property from one or more other of the second bars 24 and / or such that of one or more of the second bars 24 at least one property varies along a longitudinal direction of the respective bar(s). The at least one property can in this example comprise one or more of, width, thickness, chemical composition, electrical conductivity, optical conductivity, and thermal conductivity.

[0101] In this example, the first and / or second bars 22,24 are formed by atomic layer deposition of individual lines of material, such as by DALP. The first and / or second bars 22,24 can also be formed by atomic layer deposition of a contiguous layer of material and selectively etching away the layer between the lines, such as by DALP, such that the bars remain. It will be appreciated that the second bars may be formed directly onto the substrate at locations where no first bars are present. The second bars may form overpasses over the first bars.

[0102] Figure 7 shows an example of a flow chart of a method 200 for manufacturing the crossbar array device 20. The method 200 can be performed using for example the apparatus 1 of Figures 1A and IB, e.g. for manufacturing the crossbar array device 20 according to Figures 4A and / or 4B. In a first step 202, the method 200 comprises providing the first array 26 of first bars 22. A plurality of slabs 32 is provided on the first bars 22 by atomic layer deposition in step 204. One or more of the slabs 32 differs in at least one property from one or more other of the slabs 32. The at least one property can comprise one or more of width, thickness, chemical composition, electrical conductivity, optical conductivity, and thermal conductivity. In this example, step 204 comprises providing separated slabs 32 by atomic layer deposition of individual slabs 32. The separated slabs 32 can be provided by atomic layer deposition of a contiguous layer of material and selectively etching away the layer between slabs 32.

[0103] In step 206, a second array 28 of second bars 24 is provided on the plurality of slabs 32, such that each of the plurality of slabs 32 is connected to at least one first bar 22 and to at least one second bar 24. At least one of the first array 26 or the second array 28 can be provided in steps 202 or 206 by atomic layer deposition. At least one of the first array 26 or the second array 28 can be provided in steps 202 or 206 by atomic layer deposition, such that one or more of the first bars 22 differs in at least one property from one or more other of the first bars 22 and / or one or more of the second bars 24 differs in at least one property from one or more other of the second bars 24. At least one of the first array 26 or the second array 28 can be provided by atomic layer deposition, such that of one or more of the first bars 22 and / or the second bars 24 at least one property varies along a longitudinal direction of the respective bar(s).

[0104] Figure 8 shows an example of a flow chart of a method 300 for manufacturing the multi slab device 34. The method 300 can be performed using for example the apparatus 1 of Figures 1A and IB, e.g. for manufacturing the multi slab device 34 according to Figures 5A and / or 5B. In a first step 302, the method 300 comprises providing the substrate 2. A plurality of slabs 32 is provided on the substrate 2 by atomic layer deposition in step 304. One or more of the slabs 32 differ in at least one property from one or more other of the slabs 32. The at least one property can comprise one or more of width, thickness, chemical composition, electrical conductivity, optical conductivity, and thermal conductivity. In this example, step 304 comprises providing separated slabs 32 by atomic layer deposition of individual slabs 32, such as by DALP. The separated slabs 32 can be provided by atomic layer deposition of a contiguous layer of material and selectively etching away the layer between slabs 32, such as by DALP.

[0105] Herein, the invention is described with reference to specific examples of embodiments of the invention. It will, however, be evident that various modifications and changes may be made therein, without departing from the essence of the invention. For the purpose of clarity and a concise description features are described herein as part of the same or separate embodiments, however, alternative embodiments having combinations of all or some of the features described in these separate embodiments are also envisaged.

[0106] However, other modifications, variations, and alternatives are also possible. The specifications, drawings and examples are, accordingly, to be regarded in an illustrative sense rather than in a restrictive sense.

[0107] For the purpose of clarity and a concise description features are described herein as part of the same or separate embodiments, however, it will be appreciated that the scope of the invention may include embodiments having combinations of all or some of the features described.

[0108] In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word ‘comprising’ does not exclude the presence of other features or steps than those listed in a claim. Furthermore, the words ‘a’ and ‘an’ shall not be construed as limited to ‘only one’, but instead are used to mean ‘at least one’, and do not exclude a plurality. The mere fact that certain measures are recited in mutually different claims does not indicate that a combination of these measures cannot be used to an advantage.

Claims

Claims1. A method for manufacturing a crossbar array device comprising: providing a first array of first bars; and providing a second array of second bars crossing and in contact with the first array of first bars so as to obtain a plurality of distinct crossings, wherein the first array is provided by atomic layer deposition, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or such that of one or more of the first bars at least one property varies along a longitudinal direction of the respective bar(s) between the crossings; and / or wherein the second array is provided by atomic layer deposition, such that one or more of the second bars differs in at least one property from one or more other of the second bars and / or such that of one or more of the second bars at least one property varies along a longitudinal direction of the respective bar(s) between the crossings.

2. A method for manufacturing a crossbar array device comprising: providing a first array of first bars; providing a plurality of slabs on the first bars by atomic layer deposition, wherein one or more of the slabs differs in at least one property from one or more other of the slabs; and providing a second array of second bars on the plurality of slabs, such that each of the plurality of slabs is connected to a first bar and to a second bar.

3. The method of claim 2, wherein at least one of the first array or the second array is provided by atomic layer deposition, such that one or more of the first bars differs in at least one property from one or more other of the first bars and / or one or more of the second bars differs in at least one property from one or more other of the second bars.

4. The method of claim 2 or 3, wherein at least one of the first array or the second array is provided by atomic layer deposition, such that of one or more of the first bars and / or the second bars at least one property varies along a longitudinal direction of the respective bar(s).

5. The method of any of claims 1-4, wherein at least one of the first bars and / or at least one of the second bars is electrically conductive, optically conductive and / or thermally conductive.

6. The method of claim 5, wherein at least one of the first bars is electrically conductive and at least one of the second bars is electrically conductive and in electrically conductive contact with the electrically conductive at least one of the first bars, and / or wherein at least one of the first bars is optically conductive and at least one of the second bars is optically conductive and in optically conductive contact with the optically conductive at least one of the first bars, and / or wherein at least one of the first bars is thermally conductive and at least one of the second bars is thermally conductive and in thermally conductive contact with the thermally conductive at least one of the first bars.

7. The method of any of claims 1-6, wherein the first and / or second bars are formed by atomic layer deposition of individual lines of material; and / or wherein the first and / or second bars are formed by atomic layer deposition of a layer of material and selectively etching away the layer between the lines.

8. The method of claim 2, or any of claims 3-7 as far as dependent from claim 2, comprising providing separated slabs by atomic layer deposition of individual slabs; and / or by atomic layer deposition of a layer of material and selectively etching away the layer between slabs.

9. A method for manufacturing a multi slab device, comprising: providing a substrate; andproviding a plurality of slabs on the substrate by atomic layer deposition, wherein one or more of the slabs differ in at least one property from one or more other of the slabs.

10. The method of claim 9, comprising providing separated slabs by atomic layer deposition of individual slabs; and / or by atomic layer deposition of a layer of material and selectively etching away the layer between slabs.

11. The method of any of claims 1-10, wherein the at least one property comprises a geometry and / or a chemical composition.

12. The method of any of claims 1-11, wherein the atomic layer deposition comprises spatial atomic layer deposition or temporal atomic layer deposition.

13. The method of any of claims 1-12, wherein the atomic layer deposition comprises direct atomic layer processing.

14. A crossbar array device, such as manufactured by the method of any of claims 1-8, or any of claims 12 or 13 as far as dependent from claim 1, comprising: a first array of first bars; a second array of second bars crossing and in contact with the first array of first bars so as to obtain a plurality of distinct crossings, wherein one or more of the first bars differs in at least one property from one or more other of the first bars and / or one or more of the second bars differs in at least one property from one or more other of the second bars.

15. A crossbar array device, such as manufactured by the method of claim2, or any of claims 3-8 or 12-13 as far as dependent from claim 2, comprising: a first array of first bars; a plurality of slabs on the first bars, wherein one or more of the slabs differs in at least one property from one or more other of the slabs;a second array of second bars on the plurality of slabs, such that each of the plurality of slabs is connected to a first bar and to a second bar.

16. The crossbar array device of claim 14 or 15, wherein: one or more of the first bars has a different thickness than one or more other of the first bars; and / or one or more of the second bars has a different thickness than one or more other of the second bars; and / or one or more of the first bars has a different chemical composition than one or more other of the first bars; and / or one or more of the second bars has a different chemical composition that one or more other of the second bars; and / or of one or more of the first bars a thickness varies along a longitudinal direction of the respective bar(s) between the crossings; and / or of one or more of the second bars a thickness varies along a longitudinal direction of the respective bar(s) between the crossings; and / or of one or more of the first bars a chemical composition varies along a longitudinal direction of the respective bar(s) between the crossings; and / or of one or more of the second bars a chemical composition varies along a longitudinal direction of the respective bar(s) between the crossings.

17. The crossbar array device of claim 15 or 16, wherein: one or more of the slabs has a different thickness than one or more other of the slabs; and / or one or more of the slabs has a different chemical composition than one or more other of the slabs; and / or one or more of the slabs has a different width than one or more other of the slabs; and / or one or more of the slabs has a different electrical conductivity, optical conductivity, and / or thermal conductivity than one or more other of the slabs.

18. The crossbar array device of any of claims 15-17, wherein the crossbar array device comprises an array of thermocouples, Schottky barriers, capacitors, impedances, and / or is used in inverters, motor drives, power supplies, impedance matching means, coupling means, filtering means, sensing means, impedance- based cell analysis means, reconfigurable intelligent surfaces, synaptic weights, multi type memory networks, memristor, RRAM, MRAM and / or Josephson junctions.

19. A multi slab device, such as manufactured by the method of any of claims 9-13, comprising: a substrate; and a plurality of slabs on the substrate, wherein one or more of the slabs differ in at least one property from one or more other of the slabs.

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