Micro light-emitting diode substrate and manufacturing method therefor, and display apparatus

Abstract

A light-emitting diode substrate and a manufacturing method therefor, and a display apparatus. The light-emitting diode substrate comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer. The first semiconductor layer is of a first semiconductor type; the second semiconductor layer is of a second semiconductor type and is located on the side of the light-emitting layer that is away from the first semiconductor layer; and the first semiconductor layer comprises a light-emitting portion and a plurality of ion implantation portions, wherein the light-emitting portion is arranged between two adjacent ion implantation portions, and the lattice of the ion implantation portion is damaged. Therefore, the light-emitting diode substrate can improve the quantum efficiency and further improve a lighting effect.

Description

Micro-light-emitting diode substrate, manufacturing method thereof, and display device Technical Field

[0001] Embodiments of the present disclosure relate to a micro-LED substrate, a method for manufacturing the micro-LED substrate, and a display device. Background Art

[0002] Micro LED (Micro Light Emitting Diode) display technology refers to a high-density, tiny LED array integrated on a chip or substrate, which can be used as a backlight module for a display device or directly display. Display devices made with micro LEDs have the advantages of self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, small size, and ultra-high resolution. In addition, the material of micro LEDs is not easily affected by the environment, so it has high stability and can be used in extreme environments such as high temperature or radiation.

[0003] Typically, a microLED consists of a P-type semiconductor layer, an N-type semiconductor layer, and a light-emitting layer located between the P-type and N-type semiconductor layers. The light-emitting layer can be a multi-quantum well layer, where electrons and holes in the microLED combine to emit photons. Furthermore, the size of a microLED is less than 100 μm.

[0004] Summary of the Invention

[0005] The disclosed embodiments provide a light-emitting diode substrate, a method for manufacturing the same, and a display device. The first semiconductor layer of the light-emitting diode substrate includes a light-emitting portion and multiple ion-implanted portions. The light-emitting portion is disposed between two adjacent ion-implanted portions, and the lattice of the ion-implanted portions is disrupted. After ion implantation, the lattice of the ion-implanted portions is disrupted, transforming them into a high-resistance state that is unfavorable for carrier conduction. Consequently, the ion-implanted portions themselves cannot provide carriers to the light-emitting layer, thereby preventing the portion corresponding to the ion-implanted portions from emitting light. Furthermore, the light-emitting portion of the light-emitting diode substrate can be electrically isolated from other adjacent light-emitting portions via the ion-implanted portions, eliminating the need for etching to separate the different light-emitting portions. This avoids sidewall defects and significantly improves external quantum efficiency and light extraction efficiency. Furthermore, the manufacturing process of the light-emitting diode substrate features high repeatability, high uniformity, and ease of precise control, making it suitable for large-scale production. Furthermore, the light-emitting diode substrate can also convert portions adjacent to the light-emitting portion, which are prone to sidewall effects, into ion-implanted portions, thereby reducing the proportion of non-radiative recombination, improving internal quantum efficiency, and ultimately, enhancing light efficiency.

[0006] At least one embodiment of the present disclosure provides a micro-LED substrate, comprising: a first semiconductor layer having a first semiconductor type; a light-emitting layer; a second semiconductor layer having a second semiconductor type and located on a side of the light-emitting layer away from the first semiconductor layer, wherein the first semiconductor layer comprises a light-emitting portion and a plurality of ion-injected portions, wherein the light-emitting portion is arranged between two adjacent ion-injected portions, and the lattice of the ion-injected portion is destroyed.

[0007] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the material of the first semiconductor layer and the second semiconductor layer is gallium nitride, and the ion implantation part further includes at least one of fluorine ions, hydrogen ions, and helium ions.

[0008] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the resistance of the ion implantation portion is greater than the resistance of the light-emitting portion.

[0009] For example, in a micro-LED substrate provided in an embodiment of the present disclosure, the micro-LED substrate includes a plurality of the light-emitting portions, and the plurality of light-emitting portions and the plurality of ion implantation portions are alternately arranged along a first direction.

[0010] For example, the micro-LED substrate provided in one embodiment of the present disclosure further includes: a plurality of first electrodes located on a side of the first semiconductor layer away from the light-emitting layer, and the plurality of first electrodes are electrically connected to the plurality of light-emitting portions respectively.

[0011] For example, the micro-LED substrate provided by an embodiment of the present disclosure also includes: multiple connecting electrodes, located between the multiple first electrodes and the first semiconductor layer, the orthographic projections of the multiple first electrodes on the light-emitting layer overlap with the orthographic projections of the multiple ion injection parts on the light-emitting layer, the multiple connecting electrodes are arranged in a one-to-one correspondence with the multiple first electrodes, each of the connecting electrodes connects the corresponding first electrode to one of the light-emitting parts, and each of the connecting electrodes is a transparent electrode.

[0012] For example, the micro-LED substrate provided in one embodiment of the present disclosure further includes: a second electrode located on a side of the second semiconductor layer away from the light-emitting layer.

[0013] For example, the micro-LED substrate provided in an embodiment of the present disclosure further includes: a driving substrate including a plurality of signal output pads configured to output driving signals, wherein the plurality of signal output pads are electrically connected to the plurality of first electrodes respectively.

[0014] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the first semiconductor type is N-type, and the second semiconductor type is P-type.

[0015] For example, the micro-LED substrate provided in one embodiment of the present disclosure also includes: a vertical shading structure, located in the ion injection portion adjacent to the light-emitting portion, and extending in a direction perpendicular to the light-emitting layer, and the vertical shading structure is located on both sides of the light-emitting portion in the first direction.

[0016] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the vertical light-shielding structure is arranged around the corresponding light-emitting portion.

[0017] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, a portion of the ion implantation portion is provided between the vertical light-shielding structure and the adjacent light-emitting portion.

[0018] For example, the micro-LED substrate provided in one embodiment of the present disclosure further includes: a horizontal shading structure located on the side of each ion injection portion away from the light-emitting layer, and the horizontal shading structure is connected to the vertical shading structure to semi-enclose the ion injection portion.

[0019] For example, the micro-LED substrate provided in an embodiment of the present disclosure further includes: an edge shading structure covering the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0020] For example, the micro-LED substrate provided by one embodiment of the present disclosure also includes: a first quantum dot conversion layer, located on a side of the light-emitting portion away from the light-emitting layer; and a second quantum dot conversion layer, located on a side of the light-emitting portion away from the light-emitting layer, the first quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a first color, and the second quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a second color.

[0021] For example, the micro-LED substrate provided in one embodiment of the present disclosure further includes: a third quantum dot conversion layer, located on a side of the light-emitting portion away from the light-emitting layer, and the third quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a third color.

[0022] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the plurality of light-emitting portions and the plurality of ion implantation portions are further alternately arranged along a second direction perpendicular to the first direction.

[0023] For example, the micro-LED substrate provided in one embodiment of the present disclosure also includes: a V-shaped groove structure located in the first semiconductor layer and the light-emitting layer, the V-shaped groove structure includes a V-shaped groove located in the first semiconductor layer and a first V-shaped layer located in the light-emitting layer, the first V-shaped layer is partially located in the V-shaped groove, and is bent into a V shape along the inner side wall of the V-shaped groove.

[0024] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the V-shaped groove structure is located at an edge of the light-emitting portion close to the ion injection portion or an edge of the ion injection portion close to the light-emitting portion.

[0025] For example, the micro-LED substrate provided in one embodiment of the present disclosure further includes: an electron blocking layer, located between the light-emitting layer and the second semiconductor layer, the V-shaped groove structure is also located in the electron blocking layer, and the V-shaped groove structure further includes a second V-shaped layer, which is located on the side of the first V-shaped layer away from the first semiconductor layer and is bent into a V shape along the inner side wall of the first V-shaped layer.

[0026] For example, in the micro-LED substrate provided in an embodiment of the present disclosure, the size of the first V-shaped layer in a direction perpendicular to the first semiconductor layer is smaller than the average size of the light-emitting layer in a direction perpendicular to the first semiconductor layer.

[0027] At least one embodiment of the present disclosure provides a display device comprising any one of the above-mentioned micro-LED substrates.

[0028] At least one embodiment of the present disclosure also provides a method for manufacturing a micro-LED substrate, which includes: forming a light-emitting diode epitaxial wafer, including a first semiconductor layer having a first semiconductor type, a light-emitting layer, and a second semiconductor layer having a second semiconductor type; forming a photoresist pattern on a side of the first semiconductor layer away from the light-emitting layer; performing an ion implantation process on the second semiconductor layer using the photoresist pattern to form a portion of the first semiconductor layer blocked by the photoresist pattern into a light-emitting portion, and a portion of the first semiconductor layer not blocked by the photoresist pattern into an ion implantation portion, the first semiconductor layer includes a plurality of the ion implantation portions, the light-emitting portion is arranged between two adjacent ion implantation portions, and the lattice of the ion implantation portion is destroyed.

[0029] For example, in the manufacturing method of the micro-light-emitting diode substrate provided in an embodiment of the present disclosure, the second semiconductor layer includes a plurality of the light-emitting portions and a plurality of the ion injection portions, the plurality of the light-emitting portions and the plurality of the ion injection portions are alternately arranged along a first direction, and an ion injection portion is arranged between two adjacent light-emitting portions, and the lattice of the ion injection portion is destroyed by the ion injection process.

[0030] For example, the method for manufacturing a micro-LED substrate provided in an embodiment of the present disclosure further includes: before forming the photoresist pattern on the side of the first semiconductor layer away from the light-emitting layer, forming an ion implantation buffer layer on the side of the first semiconductor layer away from the light-emitting layer.

[0031] For example, in the method for manufacturing a micro-LED substrate provided in an embodiment of the present disclosure, the material of the ion implantation buffer layer includes silicon oxide. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0033] FIG1 is a schematic structural diagram of a micro-LED substrate provided by an embodiment of the present disclosure;

[0034] FIG2 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0035] FIG3 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0036] FIG4 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0037] FIG5 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0038] FIG6 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0039] FIG7 is a plan view of a micro-LED substrate provided in one embodiment of the present disclosure;

[0040] FIG8A is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0041] FIG8B is a schematic diagram of a V-shaped groove structure in a micro-LED substrate provided by an embodiment of the present disclosure;

[0042] 9A-9B are schematic diagrams of a method for manufacturing a V-shaped groove structure in a micro-LED substrate according to an embodiment of the present disclosure;

[0043] 10A-10B are schematic diagrams of another method for manufacturing a V-shaped groove structure in a micro-LED substrate according to an embodiment of the present disclosure;

[0044] FIG11 is a schematic flow chart of a method for manufacturing a micro light-emitting diode according to an embodiment of the present disclosure;

[0045] 12A to 12H are schematic diagrams showing steps of a method for manufacturing a micro light-emitting diode according to an embodiment of the present disclosure;

[0046] FIG13 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0047] FIG14 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0048] FIG15 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure;

[0049] FIG16 is a plan view of another micro-LED substrate provided by an embodiment of the present disclosure;

[0050] FIG17 is a schematic diagram of a display device provided in accordance with an embodiment of the present disclosure. DETAILED DESCRIPTION

[0051] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0052] Unless otherwise defined, technical or scientific terms used in this disclosure should have the ordinary meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are simply used to distinguish different components. The words "include" or "comprising" and similar terms mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0053] Currently, dry etching is the mainstream method for fabricating gallium nitride-based Micro LEDs. However, the plasma generated by dry etching physically bombards and chemically etches the unblocked gallium nitride surface, inevitably causing sidewall damage at the edges of the LED device and introducing a large number of dangling bonds. This increases the reverse leakage and non-radiative recombination of the device, significantly reducing the device's external quantum efficiency. This phenomenon, known as the sidewall effect of the LED, reduces the external quantum efficiency. As the size of the LED decreases, the proportion of the sidewall increases, and the impact of this effect on the external quantum efficiency becomes more pronounced. Furthermore, sidewall damage reduces the device's effective operating area, especially as the device size is further reduced, where the area of ​​sidewall damage increases dramatically, severely affecting the radiative recombination process. Therefore, this phenomenon hinders the etching process's ability to produce smaller and more efficient LED devices, significantly limiting the application and development of LED devices.

[0054] To this end, embodiments of the present disclosure provide a light-emitting diode substrate. The light-emitting diode substrate includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The first semiconductor layer has a first semiconductor type, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer. The first semiconductor layer includes a light-emitting portion and multiple ion-implanted portions. The light-emitting portion is located between two adjacent ion-implanted portions, and the lattice of the ion-implanted portions is disrupted. After ion implantation, the lattice of the ion-implanted portions is disrupted, transforming them into a high-resistance state that is detrimental to carrier conduction. Consequently, the ion-implanted portions themselves cannot provide carriers to the light-emitting layer, thereby preventing the portion corresponding to the ion-implanted portions from emitting light. Furthermore, the light-emitting portion of the light-emitting diode substrate can be electrically isolated from other adjacent light-emitting portions by the ion-implanted portions, eliminating the need for etching to separate the different light-emitting portions. This avoids sidewall defects and significantly improves external quantum efficiency and light extraction efficiency. Furthermore, the manufacturing process of the light-emitting diode substrate features high repeatability, high uniformity, and ease of precise control, making it suitable for large-scale production. On the other hand, the LED substrate can also transform the portion adjacent to the light-emitting portion that is prone to sidewall effect into an ion implantation portion, thereby reducing the proportion of non-radiative recombination, improving internal quantum efficiency, and further improving light efficiency.

[0055] At least one embodiment of the present disclosure further provides a display device comprising the aforementioned micro-LED substrate, which has the advantages of self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, small size, and ultra-high resolution.

[0056] At least one embodiment of the present disclosure further provides a method for manufacturing a display substrate, the method comprising: forming a light-emitting diode epitaxial wafer, comprising a first semiconductor layer having a first semiconductor type, a light-emitting layer, and a second semiconductor layer having a second semiconductor type; forming a photoresist pattern on a side of the first semiconductor layer away from the light-emitting layer; performing an ion implantation process on the first semiconductor layer using the photoresist pattern, so that a portion of the first semiconductor layer blocked by the photoresist pattern is formed as a light-emitting portion, and a portion of the first semiconductor layer not blocked by the photoresist pattern is formed as an ion implantation portion, the first semiconductor layer comprising a plurality of ion implantation portions, a light-emitting portion being disposed between two adjacent ion implantation portions, and a crystal lattice of the ion implantation portion being destroyed. As a result, the ion implantation portion itself cannot provide carriers to the light-emitting layer, thereby preventing the portion corresponding to the ion implantation portion from emitting light. Furthermore, the method for manufacturing the light-emitting diode substrate can electrically isolate the light-emitting portion from other adjacent light-emitting portions through the ion implantation portion, thereby eliminating the need for an etching process to separate the different light-emitting portions, thereby avoiding sidewall defects and significantly improving external quantum efficiency and light extraction efficiency. Furthermore, the method for manufacturing the light-emitting diode substrate has the characteristics of high repeatability, high uniformity, and ease of precise control, making it suitable for large-scale production. On the other hand, the method for manufacturing the LED substrate can also transform the portion adjacent to the light-emitting portion that is prone to sidewall effect into an ion implantation portion, thereby reducing the proportion of non-radiative recombination, improving the internal quantum efficiency, and further improving the light efficiency.

[0057] Hereinafter, the micro-LED substrate, the manufacturing method thereof, and the display device provided by the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0058] One embodiment of the present disclosure provides a micro-LED substrate. Figure 1 is a schematic structural diagram of a micro-LED substrate provided in one embodiment of the present disclosure. As shown in Figure 1, the LED substrate 100 includes a first semiconductor layer 110, a light-emitting layer 130, and a second semiconductor layer 120. The first semiconductor layer 110 comprises a first semiconductor type, and the second semiconductor layer 120 comprises a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 110.

[0059] For example, the first semiconductor layer 110 and the second semiconductor layer 120 may comprise the same semiconductor material, such as gallium nitride. In other words, the micro-LED substrate comprises a gallium nitride-based LED. Of course, the disclosed embodiments include but are not limited to these, and the first and second semiconductors may also be made of other semiconductor materials.

[0060] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type may be N-type and the second semiconductor type may be P-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type may also be P-type and the second semiconductor type may be N-type.

[0061] As shown in FIG1 , the first semiconductor layer 110 includes a light-emitting portion 112 and a plurality of ion-implanted portions 114. The light-emitting portion 112 is disposed between two adjacent ion-implanted portions 114, and the lattice of the ion-implanted portions 114 is disrupted. For example, an ion implantation process may be performed on a portion of the first semiconductor layer to form the ion-implanted portions, while the unimplanted regions form the light-emitting portions.

[0062] In the light-emitting diode substrate provided by the embodiment of the present disclosure, since the lattice of the ion-implanted portion is destroyed after ion implantation, it becomes a high-resistance state that is not conducive to carrier conduction. Therefore, the ion-implanted portion itself cannot provide carriers to the light-emitting layer, thereby avoiding the portion corresponding to the ion-implanted portion from emitting light; and the light-emitting diode substrate can electrically isolate the light-emitting portion from other adjacent light-emitting portions through the ion-implanted portion, thereby eliminating the need for an etching process to separate different light-emitting portions, thereby avoiding the generation of sidewall defects and significantly improving the external quantum efficiency and light extraction efficiency; at the same time, the manufacturing process of the light-emitting diode substrate has the characteristics of high repeatability, high uniformity, and easy and precise control, which is suitable for large-scale production and has a high yield. On the other hand, since the first semiconductor layer does not need to undergo an etching process, the surface of the first semiconductor layer away from the light-emitting layer is also relatively flat, which facilitates the formation of subsequent other film layers.

[0063] In some examples, as shown in FIG1 , light-emitting portion 112 in first semiconductor layer 110, a portion of light-emitting layer 130 in contact with light-emitting portion 112, and a portion of second semiconductor layer 120 corresponding to light-emitting portion 112 can form a single light-emitting unit. Because light-emitting portion 112 is not ion-implanted, light-emitting portion 112 and the portion of second semiconductor layer 120 corresponding to light-emitting portion 112 can provide electrons and holes to light-emitting layer 130, which recombine in light-emitting layer 130 to emit light.

[0064] In some examples, as shown in FIG1 , the ion implantation portion 114 in the first semiconductor layer 110, the portion of the light-emitting layer 130 in contact with the ion implantation portion 114, and the portion of the second semiconductor layer 120 corresponding to the ion implantation portion 114 can form an isolation structure. Because the lattice of the ion implantation portion is destroyed, it becomes a high-resistance state that is not conducive to carrier conduction and cannot provide carriers to the light-emitting layer. Therefore, the isolation structure does not emit light. Therefore, the isolation structure can provide a good optical isolation effect and avoid crosstalk between adjacent light-emitting units. In addition, the above-mentioned isolation structure does not generate power consumption, thereby reducing the power consumption of the light-emitting diode substrate.

[0065] In some examples, the depth of the ion implantation portion can be adjusted by controlling parameters of the ion implantation process, such as implantation dose, implantation energy, implantation angle, and implanted ions.

[0066] In some examples, when the material of the first semiconductor layer 110 and the second semiconductor layer 120 is gallium nitride, the ion implantation portion 114 further includes fluorine ions. Thus, the ion implantation process performed by the ion implantation portion uses fluorine ions, thereby achieving better electrical isolation of the ion implantation portion. Of course, embodiments of the present disclosure include but are not limited to this, and the ion implantation process performed by the ion implantation portion may also use hydrogen ions or helium ions, in which case the ion implantation portion further includes hydrogen ions or helium ions.

[0067] In some examples, as described above, since the lattice of the ion-implanted portion is destroyed and becomes a high-resistance state that is not conducive to carrier conduction, the resistance of the ion-implanted portion is greater than the resistance of the light-emitting portion.

[0068] In some examples, as shown in FIG1 , a micro-LED substrate 100 includes multiple light-emitting portions 112 , with the multiple light-emitting portions 112 and the multiple ion implantation portions 114 being alternately arranged along a first direction. Thus, the micro-LED substrate can form multiple independent light-emitting units, thereby serving as a backlight for a display device or directly providing a display. Furthermore, because the multiple light-emitting portions and the multiple ion implantation portions are alternately arranged, the micro-LED substrate does not require an etching process to separate adjacent light-emitting units.

[0069] In some examples, as shown in FIG. 1 , the micro LED substrate 100 further includes a plurality of first electrodes 140 located on a side of the first semiconductor layer 110 away from the light emitting layer 130 , and the plurality of first electrodes 140 are electrically connected to the plurality of light emitting portions 112 , respectively.

[0070] In some examples, as shown in Figure 1 , the micro-LED substrate 100 further includes a plurality of connecting electrodes 150 located between the plurality of first electrodes 140 and the first semiconductor layer 110 . The orthographic projections of the plurality of first electrodes 140 on the light-emitting layer 130 overlap with the orthographic projections of the plurality of ion implantation sites 114 on the light-emitting layer 130 . The plurality of connecting electrodes 150 are disposed in a one-to-one correspondence with the plurality of first electrodes 140 , each connecting electrode 150 connecting a corresponding first electrode 140 to a light-emitting site 112 . Each connecting electrode 150 is a transparent electrode. Thus, the micro-LED substrate utilizes the locations of the ion implantation sites to provide the first electrodes, allowing the first electrodes to be made of a light-opaque, low-resistance material.

[0071] In some examples, as shown in FIG1 , adjacent connecting electrodes 150 are spaced apart, and the space is located in the region corresponding to the light-emitting portion 112. However, embodiments of the present disclosure include but are not limited to this, and the space may also be located in the region where the ion implantation portion is located, as long as the connecting electrode can ensure stable electrical connection between the first electrode and the light-emitting portion.

[0072] In some examples, as shown in FIG. 1 , the micro LED substrate 100 further includes a second electrode 160 located on a side of the second semiconductor layer 120 away from the light emitting layer 130 .

[0073] For example, the first electrode 140 may be formed of a material having high conductivity and low work function, such as a metal material. For example, the connection electrode 150 may be formed of a transparent conductive material having a high work function, such as indium tin oxide (ITO).

[0074] For example, the first electrode 140 can be made of a metal material, such as any one or more of magnesium (Mg), silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and can be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti, etc.

[0075] For example, the second electrode 160 can be made of any one or more of magnesium (Mg), silver (Ag), aluminum (Al), or an alloy made of any one or more of the above metals, or a transparent conductive material, such as indium tin oxide (ITO), or a multilayer composite structure of metal and transparent conductive material.

[0076] In some examples, as shown in FIG1 , the micro-LED substrate 100 further includes a base substrate 190 . The base substrate 190 may be a sapphire substrate or a glass substrate.

[0077] Figure 2 is a schematic diagram of the structure of another micro-LED substrate provided by an embodiment of the present disclosure. As shown in Figure 2, the micro-LED substrate 100 also includes a driver substrate 170, which includes multiple signal output pads 175 configured to output drive signals. The multiple signal output pads 175 are electrically connected to the multiple first electrodes 140, respectively, to independently control each light-emitting unit. As a result, the micro-LED substrate can not only serve as a backlight module capable of local dimming, but can also directly provide display functions.

[0078] In some examples, as shown in FIG2 , the driver substrate 170 further includes a backplane 172 . Multiple pixel driver circuits (not shown) may be disposed on the backplane 172 and configured to provide pixel driver signals to multiple signal output pads. Each pixel driver circuit may be composed of thin-film transistors and capacitors. The specific structure of each pixel driver circuit can be referenced to existing designs and will not be further described in detail in the presently disclosed embodiments.

[0079] FIG3 is a schematic diagram of the structure of another micro-LED substrate provided in accordance with an embodiment of the present disclosure. Unlike the micro-LED substrate shown in FIG1 , as shown in FIG3 , the micro-LED substrate 100 further includes a vertical light-shielding structure 181, which is located within the ion implantation portion 114 adjacent to the light-emitting portion 112 and extends in a direction perpendicular to the light-emitting layer 130. Thus, the vertical light-shielding structure can further prevent optical crosstalk between adjacent light-emitting units, thereby further improving display quality. Furthermore, since the vertical light-shielding structure is formed within the ion implantation portion, the process for forming the vertical light-shielding structure does not adversely affect the light-emitting portion, thereby preventing the light-emitting portion from experiencing a sidewall effect.

[0080] 3 , the vertical light shielding structures 181 are located on both sides of the light emitting portion 112 in a first direction. The first direction may be a direction in which the light emitting portions and the ion implantation portions are alternately arranged and is parallel to the light emitting layer.

[0081] In some examples, the vertical light-shielding structures 181 may be disposed around corresponding light-emitting portions 112 , thereby better preventing optical crosstalk.

[0082] In some examples, as shown in FIG3 , a vertical light-shielding structure 181 is disposed at the edge of the ion-implanted portion 114 near the light-emitting portion 112, thereby achieving a better light-shielding effect. In this case, a portion of the ion-implanted portion 114 is disposed between the vertical light-shielding structure 181 and the adjacent light-emitting portion 112. In other words, the vertical light-shielding structure 181 is not disposed in direct contact with the light-emitting portion 112, but rather is spaced apart from the light-emitting portion 112.

[0083] For example, the distance between the vertical light shielding structure 181 and the light emitting portion 112 ranges from 1 to 5 micrometers. Of course, the embodiments of the present disclosure include but are not limited to this, and the distance between the vertical light shielding structure and the light emitting portion can also be other values.

[0084] Figure 4 is a schematic diagram of the structure of another micro-LED substrate provided by an embodiment of the present disclosure. Unlike the micro-LED substrate shown in Figure 1, as shown in Figure 3, this micro-LED substrate 100 includes a vertical light-shielding structure 181 and a horizontal light-shielding structure 182. The vertical light-shielding structure 181 is located within the ion implantation portion 114 adjacent to the light-emitting portion 112 and extends perpendicular to the light-emitting layer 130. The horizontal light-shielding structure 183 is located on the side of each ion implantation portion 114 away from the light-emitting layer 130. The horizontal light-shielding structure 183 is connected to the vertical light-shielding structure 181 to semi-enclose the ion implantation portion 114, thereby providing a better light-shielding effect.

[0085] In some examples, as shown in FIG. 4 , the vertical light-shielding structure 181 and the horizontal light-shielding structure 182 corresponding to the same ion implantation portion 114 are an integrated structure.

[0086] For example, the vertical light shielding structure 181 and the horizontal light shielding structure 182 corresponding to the same ion implantation portion 114 are an integrated structure and can be formed by the same patterning process. Of course, the embodiments of the present disclosure include but are not limited to this, and the vertical light shielding structure and the horizontal light shielding structure can also be formed using different materials and different patterning processes.

[0087] In some examples, as shown in FIG. 4 , the micro LED substrate 100 further includes an edge light-shielding structure 183 covering side surfaces of the first semiconductor layer 110 , the light-emitting layer 130 , and the second semiconductor layer 120 .

[0088] In some examples, as shown in FIG4 , when the first electrode 140 is made of a metal material, the edge light-shielding structure 183 can be formed through the same patterning process as the first electrode 140, and the edge light-shielding structure 183 is connected to the first electrode 140 located at the edge of the light-emitting diode substrate 100. In this case, to prevent the edge light-shielding structure 183 from directly contacting the side surfaces of the first semiconductor layer 110, the light-emitting layer 130, and the second semiconductor layer 120, an insulating layer 184 is further disposed between the edge light-shielding structure 183 and the side surfaces of the first semiconductor layer 110, the light-emitting layer 130, and the second semiconductor layer 120.

[0089] It should be noted that the above-mentioned insulating layer may be the structure remaining after the ion implantation buffer layer is patterned in the method for manufacturing the micro-LED substrate described later.

[0090] Figure 5 is a schematic diagram of the structure of another micro-LED substrate provided in one embodiment of the present disclosure. As shown in Figure 5, the LED substrate 100 includes a first semiconductor layer 110, a light-emitting layer 130, and a second semiconductor layer 120. The first semiconductor layer 110 is of a first semiconductor type, and the second semiconductor layer 120 is of a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 110.

[0091] As shown in FIG5 , the first semiconductor layer 110 includes a light-emitting portion 112 and a plurality of ion-implanted portions 114. The light-emitting portion 112 is disposed between two adjacent ion-implanted portions 114, and the lattice of the ion-implanted portions 114 is disrupted. For example, an ion implantation process can be performed on a portion of the first semiconductor layer to form the ion-implanted portions, while the unimplanted regions form the light-emitting portions.

[0092] Different from the micro-LED substrate shown in Figure 1, as shown in Figure 5, the micro-LED substrate 100 also includes a first quantum dot conversion layer 210 and a second quantum dot conversion layer 220; the first quantum dot conversion layer 210 is located on the side of a light-emitting portion 112 away from the light-emitting layer 130; the second quantum dot conversion layer 220 is located on the side of a light-emitting portion 112 away from the light-emitting layer 130; the first quantum dot conversion layer 210 is configured to convert the light emitted by the light-emitting layer 130 into light of a first color, and the second quantum dot conversion layer 220 is configured to convert the light emitted by the light-emitting layer 130 into light of a second color.

[0093] In the light-emitting diode substrate provided by the embodiment of the present disclosure, since the lattice of the ion-implanted portion is destroyed after ion implantation, it becomes a high-resistance state that is not conducive to carrier conduction. Therefore, the ion-implanted portion itself cannot provide carriers to the light-emitting layer, thereby avoiding the portion corresponding to the ion-implanted portion from emitting light; and the light-emitting diode substrate can electrically isolate the light-emitting portion from other adjacent light-emitting portions through the ion-implanted portion, thereby eliminating the need for an etching process to separate different light-emitting portions, thereby avoiding the generation of sidewall defects and significantly improving the external quantum efficiency and light extraction efficiency; at the same time, the manufacturing process of the light-emitting diode substrate has the characteristics of high repeatability, high uniformity, and easy and precise control, which is suitable for large-scale production and has a high yield. On the other hand, since the first semiconductor layer does not need to undergo an etching process, the surface of the first semiconductor layer away from the light-emitting layer is also relatively flat, which facilitates the formation of subsequent other film layers.

[0094] In addition, since the micro-LED substrate also includes the above-mentioned first quantum dot conversion layer and second quantum dot conversion layer, when the light-emitting layer can only emit monochromatic light, the micro-LED substrate can achieve color display through the above-mentioned first quantum dot conversion layer and second quantum dot conversion layer.

[0095] In some examples, the light-emitting layer 130 is configured to emit blue light. In this case, the first quantum dot conversion layer 210 is configured to convert the light emitted by the light-emitting layer 130 into light of a first color, and the second quantum dot conversion layer 220 is configured to convert the light emitted by the light-emitting layer 130 into light of a second color.

[0096] For example, the first color may be red, and the second color may be green. Of course, the embodiments of the present disclosure include but are not limited to this, and the first color and the second color may also be other colors.

[0097] Figure 6 is a schematic structural diagram of another micro-LED substrate provided by an embodiment of the present disclosure. Unlike the micro-LED substrate shown in Figure 1, as shown in Figure 6, this micro-LED substrate 100 further includes a first quantum dot conversion layer 210, a second quantum dot conversion layer 220, and a third quantum dot conversion layer 230. The first quantum dot conversion layer 210 is located on the side of a light-emitting portion 112 away from the light-emitting layer 130; the second quantum dot conversion layer 220 is located on the side of a light-emitting portion 112 away from the light-emitting layer 130; and the third quantum dot conversion layer 230 is located on the side of a light-emitting portion 112 away from the light-emitting layer 130. The first quantum dot conversion layer 210 is configured to convert light emitted by the light-emitting layer 130 into light of a first color, the second quantum dot conversion layer 220 is configured to convert light emitted by the light-emitting layer 130 into light of a second color, and the third quantum dot conversion layer 230 is configured to convert light emitted by the light-emitting layer 130 into light of a third color. Thus, even if the light-emitting layer can only emit monochromatic light, this micro-LED substrate can achieve color display using the first and second quantum dot conversion layers.

[0098] In some examples, the light-emitting layer 130 is configured as ultraviolet light, in which case the first quantum dot conversion layer 210 is configured to convert the light emitted by the light-emitting layer 130 into light of a first color, the second quantum dot conversion layer 220 is configured to convert the light emitted by the light-emitting layer 130 into light of a second color, and the third quantum dot conversion layer 230 is configured to convert the light emitted by the light-emitting layer 130 into light of a third color.

[0099] For example, the first color may be red, the second color may be green, and the third color may be blue. Of course, the embodiments of the present disclosure include but are not limited to this, and the first color, the second color, and the third color may also be other colors.

[0100] Figure 7 is a schematic plan view of a micro-LED substrate according to an embodiment of the present disclosure. As shown in Figure 7, when the first semiconductor layer 110 in the micro-LED substrate 100 includes multiple light-emitting portions 112 and multiple ion-implanted portions 114, the multiple light-emitting portions 112 and the multiple ion-implanted portions 114 are alternately arranged along the first and second directions to form a checkerboard-like structure. This ensures that each light-emitting portion 112 is surrounded by the ion-implanted portions 114, achieving electrical and optical isolation.

[0101] Figure 8A is a schematic diagram of the structure of another micro-LED substrate provided in an embodiment of the present disclosure; Figure 8B is a schematic diagram of a V-shaped groove structure in a micro-LED substrate provided in an embodiment of the present disclosure. As shown in Figures 8A and 8B, the micro-LED substrate 100 also includes a V-shaped groove structure 280 located within the first semiconductor layer 110 and the light-emitting layer 130. The V-shaped groove structure 280 includes a V-shaped groove 281 located within the first semiconductor layer 110 and a first V-shaped layer 282 located within the light-emitting layer 130. The first V-shaped layer 282 is partially located within the V-shaped groove 281 and is bent into a V shape along the inner sidewall of the V-shaped groove 281.

[0102] In the V-groove structure 280, because the first V-shaped layer 282 is bent into a V shape along the inner sidewall of the V-groove 281, the thickness of the first V-shaped layer 282 becomes thinner. This results in the bandgap width of the quantum well in the first V-shaped layer 282 being several hundred meV higher than that of the quantum well in the light-emitting layer at other locations. The higher potential barrier can prevent carrier migration. As a result, the V-groove structure 280 can further prevent carriers from flowing from the light-emitting portion to the ion-implanted portion, or from the ion-implanted portion to the light-emitting portion. As a result, the micro-LED substrate can further suppress the generation of non-radiative recombination, thereby improving the light efficiency. In addition, due to the presence of the above-mentioned V-shaped groove 281, the In composition of the first V-shaped layer 282 will also be reduced, which will further increase the bandgap width of the quantum well in the first V-shaped layer 282.

[0103] In some examples, as shown in FIG. 8A and FIG. 8B , a size of the first V-shaped layer 282 in a direction perpendicular to the first semiconductor layer 110 is smaller than an average size of the light emitting layer 130 in a direction perpendicular to the first semiconductor layer 110 .

[0104] 8A and 8B , the V-shaped groove structure 280 is located at the edge of the ion implantation portion 114 close to the light emitting portion 112. Of course, the embodiments of the present disclosure include but are not limited to this, and the V-shaped groove structure 280 may also be located at the edge of the light emitting portion close to the ion implantation portion.

[0105] In some examples, as shown in Figures 8A and 8B , the micro-LED substrate 100 further includes an electron blocking layer 270 located between the light-emitting layer 130 and the second semiconductor layer 120. In this case, the aforementioned V-shaped groove structure 280 is also located within the electron blocking layer 270. The V-shaped groove structure 280 further includes a second V-shaped layer 283. The second V-shaped layer 283 is located on a side of the first V-shaped layer 282 away from the first semiconductor layer 110 and is bent into a V-shape along the inner sidewall of the first V-shaped layer 282.

[0106] In some examples, as shown in FIG8A , the tip of the V-shaped groove structure may face the first electrode 140. However, embodiments of the present disclosure include but are not limited to this, and the tip of the V-shaped groove structure may face the substrate.

[0107] In some examples, the width of the orthographic projection of the V-shaped groove structure 280 on the base substrate 190 ranges from 20 to 1000 nanometers.

[0108] In some examples, the angle between the V-shaped groove 281 in the V-shaped groove structure 280 and a plane parallel to the substrate is in the range of 50-70 degrees, for example, 62 degrees.

[0109] Figures 9A-9B are schematic diagrams of a method for fabricating a V-shaped groove structure in a micro-LED substrate provided by an embodiment of the present disclosure. As shown in Figure 9A, a first epitaxial layer 110A and a superlattice layer 110B are formed on a sapphire substrate 290, and then laser treatment is performed. As shown in Figure 9B, the portion of the lattice that is laser-treated is destroyed, thereby inducing the subsequent formation of the second epitaxial layer 110C to form the aforementioned V-shaped groove 281. Then, when the light-emitting layer 130 and the electron blocking layer 270 are subsequently grown, they will grow on the inner sidewalls of the V-shaped groove 281, thereby forming the aforementioned first V-shaped layer 282 and second V-shaped layer 283. The aforementioned first semiconductor layer 110 may include a first epitaxial layer 110A, a superlattice layer 110B, and a second epitaxial layer 110C.

[0110] Figures 10A-10B illustrate another method for fabricating a V-shaped groove structure in a micro-LED substrate according to an embodiment of the present disclosure. As shown in Figure 10A , a microstructure 295 is formed on a sapphire substrate 290 , followed by growth of a first epitaxial layer 110A, a superlattice layer 110B, and a second epitaxial layer 110C on the sapphire substrate. As shown in Figure 10B , microstructure 295 induces the subsequent formation of the second epitaxial layer 110C, forming the aforementioned V-shaped groove 281. Subsequently, during the subsequent growth of the light-emitting layer 130 and electron blocking layer 270, growth occurs on the inner sidewalls of the V-shaped groove 281, thereby forming the aforementioned first V-shaped layer 282 and second V-shaped layer 283.

[0111] An embodiment of the present disclosure also provides a method for manufacturing a micro-LED substrate. FIG11 is a flow chart of a method for manufacturing a micro-LED provided in an embodiment of the present disclosure. As shown in FIG11 , the method for manufacturing a micro-LED substrate includes the following steps S101-S103:

[0112] Step S101: forming a light-emitting diode epitaxial wafer, comprising a first semiconductor layer having a first semiconductor type, a light-emitting layer, and a second semiconductor layer having a second semiconductor type.

[0113] For example, the above-mentioned light-emitting diode epitaxial wafer can be grown on a sapphire substrate.

[0114] For example, the first semiconductor layer and the second semiconductor layer include the same semiconductor material, such as gallium nitride. Of course, the embodiments of the present disclosure include but are not limited to this, and the first semiconductor and the second semiconductor may also be made of other semiconductor materials.

[0115] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type may be N-type and the second semiconductor type may be P-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type may also be P-type and the second semiconductor type may be N-type.

[0116] Step S102: forming a photoresist pattern on a side of the first semiconductor layer away from the light emitting layer.

[0117] For example, a photoresist material may be firstly coated on the side of the second semiconductor layer away from the light emitting layer, and then the above-mentioned photoresist pattern may be formed through an exposure process.

[0118] Step S103: Performing an ion implantation process on the first semiconductor layer using a photoresist pattern to form a portion of the first semiconductor layer blocked by the photoresist pattern into a light-emitting portion, and a portion of the first semiconductor layer not blocked by the photoresist pattern into an ion implantation portion. The first semiconductor layer includes a plurality of ion implantation portions, and the light-emitting portion is arranged between two adjacent ion implantation portions, and the lattice of the ion implantation portion is destroyed.

[0119] In the method for manufacturing a light-emitting diode substrate provided in an embodiment of the present disclosure, during the ion implantation process of the first semiconductor layer using a photoresist pattern, the lattice of the ion implanted portion is destroyed after ion implantation, and becomes a high-resistance state that is not conducive to carrier conduction. Therefore, the ion implanted portion itself cannot provide carriers to the light-emitting layer, thereby preventing the portion corresponding to the ion implanted portion from emitting light; and the method for manufacturing a light-emitting diode substrate can electrically isolate the light-emitting portion from other adjacent light-emitting portions through the ion implanted portion, thereby eliminating the need for an etching process to separate different light-emitting portions, thereby avoiding the generation of sidewall defects and significantly improving the external quantum efficiency and light extraction efficiency; at the same time, the method for manufacturing a light-emitting diode substrate has simple steps, high repeatability, high uniformity, and easy and precise control, making it suitable for large-scale production and having a high yield. On the other hand, since the first semiconductor layer does not need to undergo an etching process, the surface of the first semiconductor layer away from the light-emitting layer is also relatively flat, facilitating the formation of subsequent other film layers.

[0120] In some examples, the method for manufacturing a micro-LED substrate further includes forming an ion implantation buffer layer on the side of the second semiconductor layer distal from the light-emitting layer before forming a photoresist pattern on the side of the second semiconductor layer distal from the light-emitting layer. This ion implantation buffer layer can prevent ions from directly bombarding the first semiconductor layer during the subsequent ion implantation process, thereby preventing surface defects in the first semiconductor layer and affecting luminous efficiency. In other words, this ion implantation buffer layer can improve the quality of the first semiconductor layer and enhance luminous efficiency.

[0121] For example, the thickness of the ion implantation buffer layer is less than 1000 angstroms, so as not to affect the ion implantation into the first semiconductor layer.

[0122] For example, the material of the ion implantation buffer layer may be silicon oxide. Of course, the embodiments of the present disclosure include but are not limited to this, and the material of the ion implantation buffer layer may also be other suitable materials.

[0123] 12A to 12H are schematic diagrams of steps of a method for manufacturing a micro light-emitting diode provided in one embodiment of the present disclosure.

[0124] As shown in FIG12A , a light emitting diode epitaxial wafer is formed, including a first semiconductor layer 110 having a first semiconductor type, a light emitting layer 130 , and a second semiconductor layer 120 having a second semiconductor type.

[0125] For example, the aforementioned light emitting diode epitaxial wafer may be grown on a sapphire substrate 290 .

[0126] For example, the first semiconductor layer 110 and the second semiconductor layer 120 include the same semiconductor material, such as gallium nitride. Of course, the embodiments of the present disclosure include but are not limited to this, and the first semiconductor and the second semiconductor may also be made of other semiconductor materials.

[0127] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type may be N-type and the second semiconductor type may be P-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type may also be P-type and the second semiconductor type may be N-type.

[0128] For example, as shown in FIG. 12A , the light emitting diode epitaxial wafer may further include a second electrode 160 located on a side of the second semiconductor layer 120 away from the light emitting layer 130 .

[0129] For example, the second electrode 160 can be made of any one or more of magnesium (Mg), silver (Ag), aluminum (Al), or an alloy made of any one or more of the above metals, or a transparent conductive material, such as indium tin oxide (ITO), or a multilayer composite structure of metal and transparent conductive material.

[0130] As shown in FIG12B , the LED epitaxial wafer is bonded to a substrate 190. By bonding the LED epitaxial wafer to the substrate, other subsequent fabrication processes can be performed on the substrate. Alternatively, multiple LED epitaxial wafers can be bonded to one substrate to form a micro-LED substrate with a larger area.

[0131] For example, the base substrate 190 may be a glass substrate. In addition, a bonding metal layer may be provided on the base substrate 190 , and after bonding with the second electrode 160 , the bonding metal layer may serve as the second electrode 160 .

[0132] As shown in FIG. 12C , the sapphire substrate of the light-emitting diode epitaxial wafer can be removed by a lift-off process.

[0133] As shown in FIG. 12D , an ion implantation buffer layer 250 is formed on a side of the first semiconductor layer 110 away from the light emitting layer 130 ; then, a photoresist pattern 260 is formed on a side of the ion implantation buffer layer 250 away from the first semiconductor layer 110 .

[0134] In other words, before forming the photoresist pattern, the fabrication method for a micro-LED provided by the embodiments of the present disclosure can also form an ion implantation buffer layer on the side of the first semiconductor layer away from the light-emitting layer. This ion implantation buffer layer can prevent ions from directly bombarding the first semiconductor layer during the subsequent ion implantation process, thereby preventing surface defects in the first semiconductor layer and thus affecting luminous efficiency. In other words, this ion implantation buffer layer can improve the quality of the first semiconductor layer and enhance luminous efficiency.

[0135] For example, the thickness of the ion implantation buffer layer 250 is less than 1000 angstroms so as not to affect the ion implantation into the first semiconductor layer.

[0136] For example, the material of the ion implantation buffer layer 250 may be silicon oxide. Of course, the embodiments of the present disclosure include but are not limited to this, and the material of the ion implantation buffer layer 250 may also be other suitable materials.

[0137] For example, the portion covered by the photoresist pattern may correspond to the light emitting portion, and the portion not covered by the photoresist pattern may correspond to the ion implantation portion.

[0138] As shown in FIG12E , an ion implantation process is performed on the first semiconductor layer 110 using the photoresist pattern 260, so that the portion of the first semiconductor layer 110 blocked by the photoresist pattern 260 is formed as the light-emitting portion 112, and the portion of the first semiconductor layer 110 not blocked by the photoresist pattern 260 is formed as the ion implantation portion 114. The first semiconductor layer 110 includes a plurality of ion implantation portions 114, with the light-emitting portion 112 disposed between two adjacent ion implantation portions 114, and the lattice of the ion implantation portion 114 is destroyed.

[0139] For example, the depth of the ion implantation portion can be adjusted by controlling parameters of the ion implantation process, such as implantation dose, implantation energy, implantation angle, and implanted ions.

[0140] For example, when the material of the first semiconductor layer 110 and the second semiconductor layer 120 is gallium nitride, the ion implantation portion 114 further includes fluorine ions. Thus, the ion implantation process performed by the ion implantation portion uses fluorine ions, thereby achieving a better electrical isolation effect for the ion implantation portion. Of course, the embodiments of the present disclosure include but are not limited to this. The ion implantation process performed by the ion implantation portion may also use hydrogen ions or helium ions, in which case the ion implantation portion further includes hydrogen ions or helium ions.

[0141] 12F, the photoresist pattern 260 and the ion implantation buffer layer 250 are removed. It should be noted that a portion of the ion implantation buffer layer is also retained to serve as an insulating layer, and details can be found in the related description of FIG. 4.

[0142] 12G , a connection electrode 150 is formed on a side of the first semiconductor layer 110 away from the light emitting layer 130 . A portion of the connection electrode 150 contacts the light emitting portion 112 , and another portion extends from the light emitting portion 112 to the adjacent ion implantation portion 114 .

[0143] For example, as shown in FIG. 12G , a plurality of connection electrodes 150 are arranged at intervals and corresponding to a plurality of light emitting portions 112 .

[0144] As shown in Figure 12H , first electrodes 140 are formed on the side of the connecting electrode 150 that is away from the first semiconductor layer 110. The orthographic projections of the multiple first electrodes 140 on the light-emitting layer 130 overlap with the orthographic projections of the multiple ion implantation sites 114 on the light-emitting layer 130. The multiple connecting electrodes 150 are arranged in a one-to-one correspondence with the multiple first electrodes 140, and each connecting electrode 150 connects the corresponding first electrode 140 to a light-emitting site 112. Thus, the micro-LED substrate utilizes the locations of the ion implantation sites to provide the first electrodes, allowing the first electrodes to be made of opaque and low-resistance materials.

[0145] For example, the first electrode 140 may be formed of a material having high conductivity and low work function, such as a metal material. For example, the connection electrode 150 may be formed of a transparent conductive material having a high work function, such as indium tin oxide (ITO).

[0146] For example, the first electrode 140 can be made of a metal material, such as any one or more of magnesium (Mg), silver (Ag), copper (Cu), aluminum (Al), titanium (Ti) and molybdenum (Mo), or an alloy material of the above metals, such as aluminum neodymium alloy (AlNd) or molybdenum niobium alloy (MoNb), and can be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti, etc.

[0147] An embodiment of the present disclosure also provides another micro-LED substrate. Figure 13 is a schematic structural diagram of another micro-LED substrate provided in an embodiment of the present disclosure. As shown in Figure 13, an embodiment of the present disclosure provides a micro-LED substrate. The LED substrate 100 includes a first semiconductor layer 110, a light-emitting layer 130, and a second semiconductor layer 120. The first semiconductor layer 110 has a first semiconductor type, and the second semiconductor layer 120 has a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 110.

[0148] For example, the first semiconductor layer 110 and the second semiconductor layer 120 may comprise the same semiconductor material, such as gallium nitride. In other words, the micro-LED substrate comprises a gallium nitride-based LED. Of course, the disclosed embodiments include but are not limited to these, and the first and second semiconductors may also be made of other semiconductor materials.

[0149] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type can be P-type and the second semiconductor type can be N-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type can also be N-type and the second semiconductor type can be P-type.

[0150] As shown in FIG13 , the first semiconductor layer 110 includes a light-emitting portion 112 and two ion-implanted portions 114 located on either side of the light-emitting portion 112. The light-emitting portion 112 is disposed between two adjacent ion-implanted portions 114, and the lattice of the ion-implanted portions 114 is disrupted. For example, an ion implantation process can be performed on a portion of the first semiconductor layer to form the ion-implanted portions, while the unimplanted regions form the light-emitting portions.

[0151] In the LED substrate provided by the embodiments of the present disclosure, the ion-implanted portion undergoes ion implantation, destroying the lattice and transforming it into a high-resistance state that is detrimental to carrier conduction. Therefore, the portion of the LED substrate adjacent to the light-emitting portion that is prone to sidewall effects can be converted into an ion-implanted portion, thereby reducing the proportion of non-radiative recombination, improving internal quantum efficiency, and ultimately enhancing luminous efficacy.

[0152] In some examples, as shown in FIG13 , the ion implantation portion 114 is located at the edge of the first semiconductor layer 110. Therefore, when defects exist at the edge of the first semiconductor layer 110, the edge of the first semiconductor layer 110 can be converted into the ion implantation portion 114 to reduce the proportion of non-radiative recombination, improve internal quantum efficiency, and thus improve light efficiency.

[0153] In some examples, as shown in FIG13 , light-emitting portion 112 in first semiconductor layer 110, a portion of light-emitting layer 130 in contact with light-emitting portion 112, and a portion of second semiconductor layer 120 corresponding to light-emitting portion 112 can form a single light-emitting unit. Because light-emitting portion 112 is not ion-implanted, light-emitting portion 112 and the portion of second semiconductor layer 120 corresponding to light-emitting portion 112 can provide electrons and holes to light-emitting layer 130, which recombine in light-emitting layer 130 to emit light.

[0154] In some examples, the depth of the ion implantation portion can be adjusted by controlling parameters of the ion implantation process, such as implantation dose, implantation energy, implantation angle, and implanted ions.

[0155] In some examples, when the material of the first semiconductor layer 110 and the second semiconductor layer 120 is gallium nitride, the ion implantation portion 114 further includes hydrogen ions or helium ions. Thus, the ion implantation process performed by the ion implantation portion uses hydrogen ions or helium ions, thereby increasing the resistance of the ion implantation portion. Of course, embodiments of the present disclosure include but are not limited to this, and the ion implantation process performed by the ion implantation portion may also use fluorine ions or n-type dopant ions, in which case the ion implantation portion further includes fluorine ions or n-type dopant ions.

[0156] In some examples, as described above, since the lattice of the ion-implanted portion is destroyed and becomes a high-resistance state that is not conducive to carrier conduction, the resistance of the ion-implanted portion is greater than the resistance of the light-emitting portion.

[0157] In some examples, the width of the ion implantation portion 114 can be in the range of 1-5 microns. Since the width of the sidewall defect region is typically 1-5 microns, setting the width of the ion implantation portion 114 to 1-5 microns can effectively prevent the adverse effects of the sidewall defects on light emission. Of course, the embodiments of the present disclosure include but are not limited to these, and the width of the ion implantation portion can also be other values.

[0158] In some examples, as shown in FIG13 , the micro LED substrate 100 further includes a first electrode 140 and a second electrode 160 , wherein the first electrode 140 is located on a side of the first semiconductor layer 110 away from the light emitting layer 130 , and the second electrode 160 is located on a side of the second semiconductor layer 120 away from the light emitting layer 130 .

[0159] In some examples, as shown in FIG. 13 , the micro LED substrate 100 further includes a base substrate 190 located on a side of the first electrode 140 away from the first semiconductor layer 110 .

[0160] Figure 14 is a schematic diagram of the structure of another micro-LED substrate provided in one embodiment of the present disclosure. As shown in Figure 14, the LED substrate 100 includes a first semiconductor layer 110, a light-emitting layer 130, and a second semiconductor layer 120. The first semiconductor layer 110 is of a first semiconductor type, and the second semiconductor layer 120 is of a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 110.

[0161] As shown in FIG14 , the first semiconductor layer 110 includes a light-emitting portion (which may be referred to as a first light-emitting portion) 112 and two ion-implanted portions (which may be referred to as first ion-implanted portions) 114 located on either side of the light-emitting portion 112. The first light-emitting portion 112 is disposed between two adjacent first ion-implanted portions 114, and the lattice of the first ion-implanted portion 114 is disrupted. Meanwhile, the second semiconductor layer 120 includes a light-emitting portion (which may be referred to as a second light-emitting portion) 122 and two ion-implanted portions (which may be referred to as second ion-implanted portions) 124 located on either side of the light-emitting portion 122. The second light-emitting portion 122 is disposed between two adjacent second ion-implanted portions 124, and the lattice of the second ion-implanted portion 124 is disrupted.

[0162] In the LED substrate provided by the embodiments of the present disclosure, the ion-implanted portion undergoes ion implantation, destroying the lattice and transforming it into a high-resistance state that is detrimental to carrier conduction. Therefore, the LED substrate can also transform portions of the first and second semiconductor layers adjacent to the light-emitting portion, which are prone to sidewall effects, into ion-implanted portions, thereby reducing the proportion of non-radiative recombination, improving internal quantum efficiency, and ultimately enhancing luminous efficacy.

[0163] Figure 15 is a schematic diagram of the structure of another micro-LED substrate provided in one embodiment of the present disclosure. As shown in Figure 15 , the LED substrate 100 includes a first semiconductor layer 110, a light-emitting layer 130, and a second semiconductor layer 120. The first semiconductor layer 110 is of a first semiconductor type, and the second semiconductor layer 120 is of a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 110.

[0164] As shown in FIG15 , the first semiconductor layer 110 includes a light-emitting portion (which may be referred to as a first light-emitting portion) 112 and two ion-implanted portions (which may be referred to as first ion-implanted portions) 114 located on either side of the light-emitting portion 112. The first light-emitting portion 112 is disposed between two adjacent first ion-implanted portions 114, and the lattice of the first ion-implanted portion 114 is disrupted. Simultaneously, the second semiconductor layer 120 includes a light-emitting portion (which may be referred to as a second light-emitting portion) 122 and two ion-implanted portions (which may be referred to as second ion-implanted portions) 124 located on either side of the light-emitting portion 122. The second light-emitting portion 122 is disposed between two adjacent second ion-implanted portions 124, and the lattice of the second ion-implanted portions 124 is disrupted. Furthermore, the light-emitting layer 130 also includes a third light-emitting portion 132 and a third ion-implanted portion 134, and the lattice of the third ion-implanted portion 135 is disrupted.

[0165] In the LED substrate provided by the embodiments of the present disclosure, the ion-implanted portion undergoes ion implantation, destroying the lattice and transforming it into a high-resistance state that is detrimental to carrier conduction. Therefore, the LED substrate can also transform portions of the first semiconductor layer, the second semiconductor layer, and the light-emitting layer adjacent to the light-emitting portion, which are prone to sidewall effects, into ion-implanted portions, thereby reducing the proportion of non-radiative recombination, improving internal quantum efficiency, and ultimately enhancing luminous efficacy.

[0166] FIG16 is a schematic plan view of another micro-LED substrate provided by an embodiment of the present disclosure. As shown in FIG16 , two ion implantation sections 114 located on either side of the light-emitting section 112 are connected to form a ring-shaped ion implantation section 114 surrounding the light-emitting section 112 .

[0167] One embodiment of the present disclosure also provides a display device. Figure 17 is a schematic diagram of a display device provided by one embodiment of the present disclosure. As shown in Figure 17, the display device 500 includes the aforementioned display substrate 100. As a result, the display substrate has advantages such as self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, compact size, and ultra-high resolution.

[0168] For example, the display device can be a display device such as an organic light emitting diode display device, as well as any product or component with a display function, such as a television, digital camera, mobile phone, watch, tablet computer, laptop computer, navigator, etc. that includes the display device, but this embodiment is not limited to this.

[0169] There are a few points to note:

[0170] (1) The drawings of the embodiments of the present disclosure only involve structures related to the embodiments of the present disclosure, and other structures can refer to general designs.

[0171] (2) In the absence of conflict, features in the same embodiment and different embodiments of the present disclosure may be combined with each other.

[0172] The foregoing description is merely an exemplary embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. The scope of protection of the present disclosure is determined by the appended claims.

Claims

1. A micro light-emitting diode substrate, comprising: A first semiconductor layer having a first semiconductor type; A light-emitting layer; A second semiconductor layer having a second semiconductor type and located on a side of the light-emitting layer away from the first semiconductor layer, wherein the first semiconductor layer includes a light-emitting portion and a plurality of ion implantation portions, the light-emitting portion is disposed between two adjacent ion implantation portions, and the lattice of the ion implantation portion is damaged.

2. The micro light-emitting diode substrate according to claim 1, wherein, The materials of the first semiconductor layer and the second semiconductor layer are gallium nitride, and the ion implantation portion further includes at least one of fluoride ions, hydrogen ions, and helium ions.

3. The micro light-emitting diode substrate according to claim 1, wherein, The resistance of the ion implantation portion is greater than that of the light-emitting portion.

4. The micro light-emitting diode substrate according to any one of claims 1-3, wherein, The micro light-emitting diode substrate includes a plurality of the light-emitting portions, and the plurality of light-emitting portions and the plurality of ion implantation portions are alternately arranged in a first direction.

5. The micro light-emitting diode substrate according to claim 4, further comprising: A plurality of first electrodes located on a side of the first semiconductor layer away from the light-emitting layer, wherein the plurality of first electrodes are electrically connected to the plurality of light-emitting portions respectively.

6. The micro light-emitting diode substrate according to claim 5, further comprising: A plurality of connection electrodes located between the plurality of first electrodes and the first semiconductor layer, wherein a positive projection of the plurality of first electrodes on the light-emitting layer overlaps with a positive projection of the plurality of ion implantation portions on the light-emitting layer, the plurality of connection electrodes are provided in one-to-one correspondence with the plurality of first electrodes, each connection electrode connects the corresponding first electrode to a light-emitting portion, and each connection electrode is a transparent electrode.

7. The micro light-emitting diode substrate according to claim 5, further comprising: A second electrode located on a side of the second semiconductor layer away from the light-emitting layer.

8. The micro light-emitting diode substrate according to claim 5, further comprising: A driving substrate including a plurality of signal output pads configured to output driving signals, wherein the plurality of signal output pads are electrically connected to the plurality of first electrodes respectively.

9. The micro light-emitting diode substrate according to any one of claims 1-3, wherein, The first semiconductor type is N-type and the second semiconductor type is P-type.

10. The micro light-emitting diode substrate according to claim 4, further comprising: A vertical light-shielding structure located among the ion implantation portions adjacent to the light-emitting portion and extending in a direction perpendicular to the light-emitting layer, wherein the vertical light-shielding structure is located on both sides of the light-emitting portion in the first direction.

11. The micro light-emitting diode substrate according to claim 10, wherein, The vertical light-shielding structure is disposed around the corresponding light-emitting portion.

12. The micro light-emitting diode substrate according to claim 10, wherein, A part of the ion implantation portion is provided between the vertical light-shielding structure and an adjacent light-emitting portion.

13. The micro light-emitting diode substrate according to claim 10, further comprising: A horizontal light-shielding structure located on a side of each ion implantation portion away from the light-emitting layer, wherein the horizontal light-shielding structure is connected to the vertical light-shielding structure to semi-surround the ion implantation portion.

14. The micro light-emitting diode substrate according to claim 4, further comprising: An edge light-shielding structure covering side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

15. The micro light-emitting diode substrate according to claim 4, further comprising: The first quantum dot conversion layer is located on a side of the light-emitting portion away from the light-emitting layer; and the second quantum dot conversion layer is located on a side of the light-emitting portion away from the light-emitting layer, wherein, the first quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a first color, and the second quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a second color.

16. The micro-light-emitting diode substrate according to claim 15, further comprising: a third quantum dot conversion layer located on a side of the light-emitting portion away from the light-emitting layer, wherein, the third quantum dot conversion layer is configured to convert the light emitted by the light-emitting layer into light of a third color.

17. The micro light-emitting diode substrate according to claim 4, wherein, The plurality of light-emitting portions and the plurality of ion implantation portions are also alternately arranged in a second direction perpendicular to the first direction.

18. The micro-light-emitting diode substrate according to any one of claims 1-3, further comprising: a V-shaped groove structure located in the first semiconductor layer and the light-emitting layer, wherein, the V-shaped groove structure includes a V-shaped groove in the first semiconductor layer and a first V-shaped layer in the light-emitting layer, the first V-shaped layer is partially located in the V-shaped groove and is bent into a V-shape along the inner side wall of the V-shaped groove.

19. The micro light-emitting diode substrate according to claim 18, wherein, The V-shaped groove structure is located at an edge of the light-emitting portion close to the ion implantation portion or an edge of the ion implantation portion close to the light-emitting portion.

20. The micro-light-emitting diode substrate according to claim 18, further comprising: an electron blocking layer located between the light-emitting layer and the second semiconductor layer, wherein, the V-shaped groove structure is also located in the electron blocking layer, and the V-shaped groove structure further includes a second V-shaped layer, the second V-shaped layer is located on a side of the first V-shaped layer away from the first semiconductor layer and is bent into a V-shape along the inner side wall of the first V-shaped layer.

21. The micro light-emitting diode substrate according to claim 18, wherein, The size of the first V-shaped layer in a direction perpendicular to the first semiconductor layer is smaller than the average size of the light-emitting layer in a direction perpendicular to the first semiconductor layer.

22. A display device comprising the micro-light-emitting diode substrate according to any one of claims 1-21.

23. A method for manufacturing a micro-light-emitting diode substrate, comprising: forming a light-emitting diode epitaxial wafer including a first semiconductor layer of a first semiconductor type, a light-emitting layer, and a second semiconductor layer of a second semiconductor type; forming a photoresist pattern on a side of the first semiconductor layer away from the light-emitting layer; performing an ion implantation process on the second semiconductor layer using the photoresist pattern to form a light-emitting portion of a portion of the first semiconductor layer blocked by the photoresist pattern, and an ion implantation portion of a portion of the first semiconductor layer not blocked by the photoresist pattern, wherein, the first semiconductor layer includes a plurality of the ion implantation portions, the light-emitting portion is disposed between two adjacent ion implantation portions, and the crystal lattice of the ion implantation portion is damaged.

24. The method for manufacturing a micro light-emitting diode substrate according to claim 23, wherein, The second semiconductor layer includes a plurality of the light-emitting portions and a plurality of the ion implantation portions. The plurality of the light-emitting portions and the plurality of the ion implantation portions are alternately arranged in a first direction. One of the ion implantation portions is arranged between two adjacent light-emitting portions, and the lattice of the ion implantation portion is damaged by the ion implantation process.

25. The method for manufacturing a micro light-emitting diode substrate according to claim 23 further includes: Before forming the photoresist pattern on a side of the first semiconductor layer away from the light-emitting layer, forming an ion implantation buffer layer on the side of the first semiconductor layer away from the light-emitting layer.

26. The manufacturing method of the micro light-emitting diode substrate according to claim 25, wherein, The material of the ion implantation buffer layer includes silicon oxide.

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