Substrate processing device, substrate processing method, and storage medium

Abstract

This substrate processing device comprises: a processing tank; a lid body; a chemical solution supply unit; a pressurization unit; and a control unit. The processing tank has an opening in the upper part thereof, and in the processing tank, a substrate is immersed in a chemical solution and processed. The lid body is configured so as to be able to seal the opening of the processing tank. The chemical solution supply unit supplies the chemical solution to the processing tank. The pressurization unit pressurizes the chemical solution on the upstream side of the chemical solution supply unit. The control unit controls the aforementioned units. The control unit causes: the substrate to be immersed in the chemical solution stored in the processing tank; the lid body to seal the opening of the processing tank; the chemical solution pressurized by the pressurization unit to be supplied from the chemical solution supply unit to the processing tank; and the chemical solution stored in the processing tank to be pressurized.

Description

SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium.

[0002] 2. Description of the Related Art Conventionally, a technique for treating a substrate such as a semiconductor wafer (hereinafter also referred to as a wafer) with ozone water has been known (see Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2021-190445

[0004] The present disclosure provides a technique that allows substrates to be efficiently treated with chemicals.

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank, a lid, a chemical solution supply unit, a pressurizing unit, and a control unit. The processing tank has an opening at its top, and a substrate is immersed in the chemical solution for processing. The lid is configured to be able to seal the opening of the processing tank. The chemical solution supply unit supplies the chemical solution to the processing tank. The pressurizing unit pressurizes the chemical solution upstream of the chemical solution supply unit. The control unit controls each unit. The control unit immerses the substrate in the chemical solution stored in the processing tank, seals the opening of the processing tank with the lid, and supplies the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank, thereby pressurizing the chemical solution stored in the processing tank.

[0006] According to the present disclosure, substrates can be efficiently treated with chemical solutions.

[0007] FIG. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is a diagram showing the peripheral configuration of a lid according to an embodiment. FIG. 3 is a diagram showing the peripheral configuration of a lid according to an embodiment. FIG. 4 is a diagram showing the peripheral configuration of a lid according to an embodiment. FIG. 5 is a flowchart showing a substrate processing procedure performed by a substrate processing apparatus according to an embodiment. FIG. 6 is a diagram showing the configuration of a substrate processing apparatus according to a first modified example of the embodiment. FIG. 7 is a cross-sectional view of the processing tank shown in FIG. 6 as viewed from the positive direction of the X-axis to the negative direction of the X-axis. FIG. 8 is a diagram showing an example of the relationship between the wavelength (nm) of light irradiated from a light irradiation unit onto a wafer and the light absorptance (%) of the wafer. FIG. 9 is a flowchart showing the substrate processing procedure performed by a substrate processing apparatus according to a first modified example of the embodiment. FIG. 10 is a diagram showing the configuration of a substrate processing apparatus according to a second modified example of the embodiment. FIG. 11 is a flowchart showing the substrate processing procedure performed by a substrate processing apparatus according to the second modified example of the embodiment.

[0008] Hereinafter, embodiments for carrying out a substrate processing apparatus, a substrate processing method, and a storage medium according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited to these embodiments.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In the drawings referred to below, for ease of understanding, the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, and an orthogonal coordinate system is shown in which the positive Z-axis direction is the vertically upward direction. The rotation direction around the vertical axis is also referred to as the θ direction.

[0011] A technique for treating substrates such as semiconductor wafers (hereinafter also referred to as wafers) with ozone water is known. However, the above-mentioned conventional technique leaves room for further improvement in terms of efficiently treating substrates with chemicals such as ozone water.

[0012] Therefore, there is a need for a technology that can overcome the above-mentioned problems and efficiently process substrates with chemical solutions.

[0013] <Configuration of Substrate Processing Apparatus> The configuration of a substrate processing apparatus according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing the configuration of a substrate processing apparatus according to an embodiment.

[0014] 1, the substrate processing apparatus 1 includes a processing liquid generator 10 and a substrate processing unit 30. The processing liquid generator 10 sequentially generates various processing liquids, such as ozone water (an example of a chemical liquid), a rinse liquid, and a cleaning liquid. The substrate processing unit 30 performs a series of substrate processing steps, including ozone water processing, a rinse processing, and a cleaning processing, on wafers W in a single processing tank 31 using the various processing liquids sequentially generated.

[0015] The substrate processing apparatus 1 also includes a processing liquid supply path 21 extending from the processing liquid generator 10 to the substrate processing unit 30. The processing liquid supply path 21 connects a DIW supply source 22a of the processing liquid generator 10 to the substrate processing unit 30.

[0016] The treatment liquid supply path 21 is configured by connecting a first supply path 22, a mixer 23, and a second supply path 24 in this order.

[0017] The first supply path 22 supplies DIW (Deionized Water) as a raw material for ozone water, DIW as a rinse liquid, and DIW as a raw material for SC1 (aqueous solution containing ammonia and hydrogen peroxide) as a cleaning liquid to the mixer 23. The first supply path 22 has, in order from the upstream side, a DIW supply source 22a, a degassing module 22b, a cooler 22c, a valve 22d, a constant pressure valve 22e, and a flow meter 22f.

[0018] The DIW supply source 22a is, for example, a tank that stores DIW. The degassing module 22b removes dissolved gases, such as nitrogen, from the DIW supplied from the DIW supply source 22a. By removing the dissolved gases from the DIW using the degassing module 22b, ozone gas can be efficiently dissolved in the DIW.

[0019] The cooler 22c cools the DIW flowing through the first supply path 22 to a given temperature (for example, 10° C. to 20° C.) By cooling the DIW with the cooler 22c, it is possible to efficiently dissolve ozone gas in the DIW.

[0020] The constant pressure valve 22e adjusts the flow rate of the DIW supplied to the mixer 23 based on the flow rate of the DIW measured by the flow meter 22f. That is, the constant pressure valve 22e performs feedback control based on the flow rate of the DIW measured by the flow meter 22f.

[0021] The mixer 23 is connected on the upstream side to the first supply path 22 and on the downstream side to the second supply path 24. In addition, the mixer 23 is connected to an acid-based chemical solution supply path 26.

[0022] The acid-based chemical supply path 26 supplies an acid-based chemical such as an organic acid (citric acid, acetic acid, etc.), hydrochloric acid, or sulfuric acid to the mixer 23. In the embodiment, by supplying the acid-based chemical to the DIW to adjust the pH of the DIW to be acidic, the concentration of ozone dissolved in the DIW can be increased.

[0023] The acid-based chemical supply path 26 includes, in order from the upstream side, an acid-based chemical supply source 26 a, a valve 26 b, a constant pressure valve 26 c, and a flow meter 26 d. The acid-based chemical supply source 26 a is, for example, a cabinet or a circulation line capable of generating an acid-based chemical.

[0024] The constant pressure valve 26c adjusts the flow rate of the acid-based chemical solution supplied to the mixer 23 based on the flow rate of the acid-based chemical solution measured by the flow meter 26d. That is, the constant pressure valve 26c performs feedback control based on the flow rate of the acid-based chemical solution measured by the flow meter 26d.

[0025] An ozone gas supply path 41 is connected to the mixer 23 downstream of the connection point with the acid-based chemical liquid supply path 26 .

[0026] The ozone gas supply path 41 supplies ozone gas to the mixer 23. The ozone gas supply path 41 has, in order from the upstream side, an ozone gas generator 42 and a valve 43. A check valve may be provided between the valve 43 and the mixer 23.

[0027] The ozone gas generator 42 generates ozone gas from oxygen gas using known technology. Oxygen gas, which is a raw material for ozone gas, is supplied to the ozone gas generator 42 from an oxygen gas supply path 44. The oxygen gas supply path 44 has, in order from the upstream side, an oxygen gas supply source 44a, a constant pressure valve 44b, and a valve 44c. The oxygen gas supply source 44a is, for example, a tank that stores oxygen gas.

[0028] Although not shown in FIG. 1, the ozone gas generator 42 is connected to a cooling water supply unit that supplies cooling water and a cooling water discharge unit that discharges used cooling water.

[0029] An ammonia water supply channel 51 is connected to the mixer 23 downstream of the connection point with the ozone gas supply channel 41 .

[0030] The ammonia water supply path 51 supplies ammonia water, which is a raw material for SC1 as a cleaning liquid, to the mixer 23. The ammonia water supply path 51 has, in order from the upstream side, an ammonia water supply source 51 a, a valve 51 b, a constant pressure valve 51 c, and a flow meter 51 d. The ammonia water supply source 51 a is, for example, a tank that stores ammonia water.

[0031] The constant pressure valve 51c adjusts the flow rate of the ammonia water supplied to the mixer 23 based on the flow rate of the ammonia water measured by the flow meter 51d. That is, the constant pressure valve 51c performs feedback control based on the flow rate of the ammonia water measured by the flow meter 51d.

[0032] A hydrogen peroxide solution supply channel 52 is connected to the mixer 23 downstream of the connection point with the ammonia water supply channel 51 .

[0033] Hydrogen peroxide supply line 52 supplies hydrogen peroxide, which is a raw material for SC1 used as a cleaning liquid, to mixer 23. Hydrogen peroxide supply line 52 includes, in order from upstream to downstream, a hydrogen peroxide supply source 52a, a valve 52b, a constant pressure valve 52c, and a flow meter 52d. Hydrogen peroxide supply source 52a is, for example, a tank that stores hydrogen peroxide.

[0034] The constant pressure valve 52c adjusts the flow rate of the hydrogen peroxide solution supplied to the mixer 23 based on the flow rate of the hydrogen peroxide solution measured by the flow meter 52d. In other words, the constant pressure valve 52c performs feedback control based on the flow rate of the hydrogen peroxide solution measured by the flow meter 52d.

[0035] The mixer 23 selectively mixes other chemicals or gases with the DIW supplied from the first supply path 22 to sequentially generate various processing liquids. That is, the mixer 23 can mix the DIW supplied from the first supply path 22 with an acid-based chemical supplied from the acid-based chemical supply path 26 and ozone gas supplied from the ozone gas supply path 41 to generate ozone water. The mixer 23 can also mix the DIW supplied from the first supply path 22 with ammonia water supplied from the ammonia water supply path 51 and hydrogen peroxide water supplied from the hydrogen peroxide water supply path 52 to generate SC1. The mixer 23 can also flow the DIW supplied from the first supply path 22 downstream of the mixer 23 as a rinse liquid without mixing other chemicals or gases with the DIW. A second supply path 24 is connected downstream of the mixer 23.

[0036] The second supply path 24 is provided between the mixer 23 of the processing liquid generation unit 10 and the substrate processing unit 30, and supplies the various processing liquids supplied from the mixer 23 to a first nozzle 33 (described later) of the substrate processing unit 30. Specifically, the second supply path 24 sequentially supplies ozone water, DIW as a rinsing liquid, and SC1 as a cleaning liquid to the first nozzle 33.

[0037] The second supply path 24 has, in order from the upstream side, a constant pressure valve 24a, a filter 24b, a flow meter 24c, and a valve 24d. The constant pressure valve 24a adjusts the flow rate of the treatment liquid flowing through the second supply path 24 based on the flow rate of the ozone water measured by the flow meter 24c. In other words, the constant pressure valve 24a performs feedback control based on the flow rate of the treatment liquid measured by the flow meter 24c.

[0038] The filter 24 b removes contaminants such as particles contained in the various processing liquids flowing through the second supply path 24 .

[0039] A third supply path 60 branches off from the second supply path 24 upstream of the constant pressure valve 24a and connects to a second nozzle 34 (described later) of the substrate processing unit 30. The third supply path 60 supplies ozone water to the second nozzle 34.

[0040] The third supply path 60 has, in order from the upstream side, a valve 61, a filter 62, a pump 63 (an example of a pressurizing unit), and a flow meter 64. The filter 62 removes contaminants such as particles contained in the ozonated water flowing through the third supply path 60.

[0041] The pump 63 pressurizes the ozonated water flowing through the third supply path 60 to a given pressure higher than atmospheric pressure. The pressurized ozonated water is supplied to the second nozzle 34 via the third supply path 60. By pressurizing the ozonated water in this manner, ozonated water having a given ozone concentration can be efficiently produced.

[0042] This is because the molar fraction M of ozone gas dissolved in the raw material liquid DIW is estimated to follow Henry's law shown in the following formula (1), and in this Henry's law, the molar fraction M of dissolved ozone gas is proportional to the partial pressure P of ozone in the gas. M = H －１ ・P ... (1) H: Henry's constant

[0043] Here, the above-mentioned "given ozone concentration" is, for example, an ozone concentration capable of removing (stripping) a resist film formed on a wafer W, and is, for example, in the range of 500 mg / L to 1500 mg / L. Also, the above-mentioned "given pressure" is, for example, a pressure capable of maintaining the ozone concentration of the ozone water at a given ozone concentration, and is, for example, in the range of 0.6 MPa to 2.0 MPa.

[0044] The substrate processing unit 30 includes a processing tank 31, a holding unit 32, a first nozzle 33 (an example of another chemical liquid supply unit), a second nozzle 34 (an example of a chemical liquid supply unit), a first liquid discharge unit 35 (an example of a chemical liquid discharge unit), a second liquid discharge unit 36, and a lid body 37.

[0045] The processing tank 31 is a box-shaped tank having an opening 31a at the top, and stores various processing liquids therein in sequence. That is, the processing tank 31 stores ozone water, DIW as a rinse liquid, or SC1 as a cleaning liquid in sequence. Wafers W for one lot arranged in an upright position are immersed in the processing liquids stored in the processing tank 31.

[0046] A liquid receiver (not shown) is disposed outside the treatment tank 31 to surround the treatment tank 31. The liquid receiver receives the treatment liquid flowing out from the opening 31a of the treatment tank 31.

[0047] The holder 32 holds a plurality of wafers W that form a lot in an upright position, lined up front and rearward. The holder 32 is fixed to an immersion position inside the processing bath 31 where the entire wafers W are immersed in the processing liquid. The holder 32 can receive a plurality of wafers W from a substrate transfer device that transfers a plurality of wafers W and place them at the immersion position.

[0048] The first nozzle 33 is disposed inside the processing tank 31 and supplies ozone water, DIW as a rinse liquid, or SC1 as a cleaning liquid into the processing tank 31. The first nozzle 33 extends along the arrangement direction of the plurality of wafers W (the Y-axis direction), and discharges the ozone water, DIW as a rinse liquid, or SC1 as a cleaning liquid from a plurality of discharge ports provided along the arrangement direction of the plurality of wafers W.

[0049] The first nozzle 33 is connected to the second supply path 24 of the processing liquid supply path 21, and ejects ozone water, DIW as a rinsing liquid, or SC1 as a cleaning liquid supplied from the second supply path 24 from a plurality of ejection ports.

[0050] The first nozzle 33 can supply ozone water to the treatment tank 31 at a flow rate greater than the flow rate of ozone water supplied to the treatment tank 31 from the second nozzle 34. For this reason, the outlet of the first nozzle 33 has a larger opening diameter than the outlet of the second nozzle 34.

[0051] The second nozzle 34 is disposed below the first nozzle 33 inside the processing tank 31, and supplies pressurized ozone water to the processing tank 31. The second nozzle 34 extends along the arrangement direction of the plurality of wafers W (Y-axis direction), and discharges the pressurized ozone water from a plurality of discharge ports provided along the arrangement direction of the plurality of wafers W.

[0052] The second nozzle 34 is connected to the third supply path 60 of the treatment liquid supply path 21, and discharges pressurized ozone water supplied from the third supply path 60 from a plurality of supply ports.

[0053] The first liquid discharge unit 35 discharges the ozone water from the processing tank 31 to the drain DR when processing the wafer W with the pressurized ozone water. The first liquid discharge unit 35 includes a discharge path 35 a, a back pressure valve 35 c, a flow meter 35 d, and a valve 35 e.

[0054] The discharge path 35a is connected to the processing tank 31 at a position above the wafer W and below the opening 31a. A pressure sensor 35b, a back pressure valve 35c, a flow meter 35d, and a valve 35e are provided in the discharge path 35a in this order from the upstream side based on the connection position with the processing tank 31.

[0055] The pressure sensor 35b is provided upstream of the back pressure valve 35c and the flow meter 35d in the discharge path 35a and detects the pressure of the ozone water flowing through the discharge path 35a. The detected value of the pressure sensor 35b is output to a control unit 71 (described later). The back pressure valve 35c adjusts the flow rate of the ozone water flowing through the discharge path 35a based on the flow rate of the ozone water measured by the flow meter 35d. In other words, the back pressure valve 35c performs feedback control based on the flow rate of the ozone water measured by the flow meter 35d.

[0056] The second liquid discharge unit 36 ​​discharges each processing liquid to the drain DR when switching between processing liquids used in the ozone water processing, rinsing processing, and cleaning processing of the wafer W. The second liquid discharge unit 36 ​​has a discharge path 36 a and a valve 36 b. The discharge path 36 a is connected to the bottom of the processing tank 31.

[0057] The lid 37 is configured to be able to seal the opening 31a of the treatment tank 31. Details of the lid 37 will be described later.

[0058] The substrate processing apparatus 1 further includes a control device 70. The control device 70 controls the operation of each part of the substrate processing apparatus 1. The control device 70 is, for example, a computer, and includes a control unit 71 and a storage unit 72.

[0059] The control unit 71 is a controller. The control unit 71 is realized, for example, by a central processing unit (CPU) or a micro processing unit (MPU) executing various programs stored in a storage device inside the control device 70 using a RAM as a work area. The control unit 71 may also be realized, for example, by an integrated circuit such as an application specific integrated circuit (ASIC) or a field programmable gate array (FPGA).

[0060] The control unit 71 has a computer-readable storage medium. The storage medium stores the above-mentioned programs for controlling various processes executed in the substrate processing apparatus 1. The programs may be stored in the computer-readable storage medium or may be installed into the storage medium of the control unit 71 from another storage medium. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0061] The storage unit 72 is realized by, for example, a semiconductor memory element such as a random access memory (RAM) or a flash memory, or a storage device such as a hard disk or an optical disk.

[0062] <Peripheral Structure of Lid> Figures 2 to 4 are views showing the peripheral structure of the lid 37 according to this embodiment. Figure 2 shows the lid 37 in an open position that opens the opening 31a of the treatment tank 31. Figure 3 shows the lid 37 in a closed position that covers the opening 31a of the treatment tank 31. Figure 4 shows the lid 37 pressed against the opening 31a of the treatment tank 31.

[0063] As shown in FIGS. 2 to 4, the cover 37 is connected to a moving mechanism 371, and can be moved between an open position and a closed position by the moving mechanism 371.

[0064] The treatment tank 31 has an upper end 311 at the top of the side wall that protrudes above the opening 31a. The upper end 311 is thinner than the other parts of the side wall, and has a counterbore at the position of the opening 31a that is larger in diameter than the opening 31a and communicates with the opening 31a. The counterbore of the upper end 311 accommodates the lid 37 when it is in the closed position.

[0065] The upper end portion 311 is also formed with a plurality of (here, two) insertion holes 31 b that penetrate the inner wall surface and the outer wall surface of the upper end portion 311 .

[0066] The substrate processing unit 30 includes a plurality of (here, two) locking members 38. The locking members 38 are provided so as to be insertable into and removable from the plurality of insertion holes 31b in the upper end portion 311. Each locking member 38 is connected to a moving mechanism 381 that moves the locking member 38 in the horizontal direction.

[0067] With the wafer W loaded into the processing tank 31, the control unit 71 controls the moving mechanism 371 to move the lid 37 from the open position to the closed position, thereby sealing the opening 31a of the processing tank 31 with the lid 37 (see FIG. 3).

[0068] Furthermore, the control unit 71 moves the two locking members 38 using the movement mechanism 381, thereby inserting each locking member 38 into the insertion hole 31b in the upper end portion 311 (see FIG. 4).

[0069] The locking member 38 presses the lid 37 against the opening 31a against the internal pressure generated by the pressurized ozone water supplied to the treatment tank 31. This allows the opening 31a of the treatment tank 31 to be kept sealed by the lid 37.

[0070] <Substrate Processing Procedure> Next, a substrate processing procedure according to the embodiment will be described with reference to Fig. 5. Fig. 5 is a flowchart showing the substrate processing procedure executed by the substrate processing apparatus 1 according to the embodiment. Each processing procedure shown in Fig. 5 is executed under the control of the control unit 71.

[0071] 5, no processing liquid is stored in the processing bath 31. That is, before the start of the substrate processing series, the processing bath 31 is empty.

[0072] 5 , in the substrate processing apparatus 1, ozone water is first supplied from the first nozzle 33 (step S101). Specifically, the control unit 71 controls the processing liquid generator 10 to open the valves 22d, 24d, 26b, 43, and 44c. As a result, the ozone water generated in the mixer 23 is supplied to the first nozzle 33 via the second supply path 24. The ozone water is then discharged from the outlet of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generator 10 to close the valves 22d, 24d, 26b, 43, and 44c. As a result, the supply of ozone water from the first nozzle 33 is stopped.

[0073] Next, in the substrate processing apparatus 1, the wafer W is loaded into the processing tank 31 (step S102). Specifically, the control unit 71 controls a substrate transfer device (not shown) that transfers the wafer W, and transfers the wafer W to the holder 32 arranged in the processing tank 31. As a result, the wafer W is placed at an immersion position in the processing tank 31. That is, the wafer W is immersed in the ozone water stored in the processing tank 31.

[0074] Next, the control unit 71 controls the moving mechanism 371 to close the opening 31a of the treatment tank 31 with the lid 37 (step S103). Then, the control unit 71 controls the moving mechanism 381 to press the lid 37 toward the opening 31a with the locking member 38.

[0075] Next, in the substrate processing apparatus 1, pressurized ozone water is supplied from the second nozzle 34 (step S104). Specifically, the control unit 71 controls the processing liquid generator 10 to open the valves 22d, 26b, 43, 44c, and 61, and controls the pump 63 to pressurize the ozone water flowing through the third supply path 60. As a result, the ozone water generated in the mixer 23 is pressurized in the third supply path 60, and the pressurized ozone water is supplied to the second nozzle 34 via the third supply path 60. Then, the pressurized ozone water is discharged from the discharge port of the second nozzle 34 into the processing tank 31, thereby pressurizing the ozone water stored in the processing tank 31.

[0076] In this manner, in the substrate processing apparatus 1 according to this embodiment, the ozone water in the processing tank 31 is pressurized by the pressurized ozone water while the opening 31a of the processing tank 31 is sealed with the lid 37. This makes it possible to prevent the ozone concentration of the ozone water around the wafer W from decreasing due to a drop in the pressure of the ozone water in the processing tank 31.

[0077] That is, in the embodiment, by pressurizing the ozone water in the processing tank 31, the concentration of the ozone water around the wafer W can be maintained, and therefore the wafer W can be efficiently processed with the ozone water.

[0078] Next, the control unit 71 maintains the discharge amount of ozone water from the first liquid discharge unit 35 at a given value (step S105). Specifically, the control unit 71 opens the valve 35e and controls the valve opening of the back pressure valve 35c to a first valve opening so that the measurement value of the flow meter 35d is maintained at a given value. The first valve opening is a valve opening for narrowing the valve opening of the back pressure valve 35c.

[0079] That is, in the substrate processing apparatus 1 according to the embodiment, when the ozone water in the processing tank 31 is pressurized with pressurized ozone water, the back pressure valve 35c is throttled to prevent an increase in the amount of ozone water discharged from the first liquid discharge section 35 due to an increase in the liquid pressure of the ozone water in the processing tank 31.

[0080] This prevents a decrease in the liquid pressure of the ozone water in the processing tank 31, making it difficult for the ozone in the ozone water to be decomposed. Therefore, according to the embodiment, the wafers W can be efficiently processed with high-concentration ozone water.

[0081] Next, the control unit 71 determines whether the ozone water treatment of the wafer W has been completed (step S106). For example, the control unit 71 may terminate the ozone water treatment of the wafer W when a predetermined time has elapsed since the pressurized ozone water was supplied to the treatment tank 31 in step S104.

[0082] In step S106, if the ozone water treatment of the wafer W has not been completed (No in step S106), the control unit 71 returns the process to step S104.

[0083] On the other hand, when it is determined that the ozone water processing of the wafer W has been completed (Yes in step S106), the control unit 71 stops the supply of pressurized ozone water from the second nozzle 34 (step S107).

[0084] Next, the control unit 71 controls the valve opening of the back pressure valve 35c to a second valve opening degree that is greater than the first valve opening degree (step S108). For example, the control unit 71 fully opens the back pressure valve 35c. This reduces the pressure of the ozonated water stored in the treatment tank 31.

[0085] In this embodiment, the pressure of the ozone water in the treatment tank 31 is reduced prior to the subsequent removal of the lid 37 from the treatment tank 31. This allows the lid 37 to be removed in a state where the internal pressure from the ozone water in the treatment tank 31 to the lid 37 is relaxed, thereby preventing the ozone water from scattering from the treatment tank 31.

[0086] Next, the control unit 71 determines whether the measurement value of the pressure sensor 35b is equal to or less than a specified value (step S109). The control unit 71 repeats the determination process of step S109 until the measurement value of the pressure sensor 35b is equal to or less than the specified value (step S109 No).

[0087] On the other hand, if it is determined in step S109 that the measurement value of pressure sensor 35b is equal to or less than the specified value (Yes in step S109), control unit 71 controls movement mechanism 381 to release lock member 38 from pressing lid body 37. Thereafter, control unit 71 controls movement mechanism 371 to detach lid body 37 from opening 31a of treatment tank 31 (step S110).

[0088] Thereafter, the control unit 71 opens the valve 36 b for a predetermined time period to discharge the ozone water from the treatment tank 31 .

[0089] Next, in the substrate processing apparatus 1, a rinse process is performed on the wafer W (step S111). Specifically, the control unit 71 opens the valves 22d and 24d. As a result, DIW as a rinse liquid is stored in the processing tank 31, and the wafer W is immersed in the DIW. As a result, the ozone water is removed from the wafer W.

[0090] Thereafter, the control unit 71 closes the valves 22 d and 24 d and opens the valve 36 b for a predetermined time period to discharge the DIW from the treatment tank 31 .

[0091] Next, in the substrate processing apparatus 1, a cleaning process is performed on the wafer W (step S112). Specifically, the control unit 71 opens the valves 22d, 24d, 51b, and 52b. As a result, SC1 is stored as a cleaning liquid in the processing tank 31, and the wafer W is immersed in SC1. As a result, foreign matter such as particles is removed from the wafer W.

[0092] Thereafter, the control unit 71 closes the valves 22 d , 24 d , 51 b , and 52 b , and opens the valve 36 b for a predetermined time period to discharge SC1 from the treatment tank 31 .

[0093] Next, in the substrate processing apparatus 1, a rinse process is performed on the wafer W (step S113). Specifically, the control unit 71 opens the valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinse liquid, and the wafer W is immersed in the DIW. As a result, SC1 is removed from the wafer W.

[0094] Next, the control unit 71 controls the substrate transfer device (not shown) to unload the wafer W from the processing bath 31 (step S114), thereby completing the series of substrate processing steps.

[0095] <Modification 1> Next, modifications of the embodiment will be described with reference to Figs. 6 to 11. Fig. 6 is a diagram showing the configuration of a substrate processing apparatus 1 according to Modification 1 of the embodiment. Fig. 7 is a cross-sectional view of the processing tank 31 shown in Fig. 6 as viewed from the positive direction of the X-axis to the negative direction of the X-axis. For ease of understanding, the first nozzle 33 is omitted from Fig. 7.

[0096] As shown in FIGS. 6 and 7, the substrate processing section 30 of the substrate processing apparatus 1 according to the first modification includes a holding section 32A and a light irradiation section 80.

[0097] The holder 32A holds one wafer W in an upright position. The holder 32A is fixed inside the processing bath 31 and holds the wafer W at an immersion position where the entire wafer W is immersed in the processing liquid. The holder 32A can receive one wafer W from a substrate transfer device (not shown) that transfers one wafer W and place it at the immersion position.

[0098] The light irradiation unit 80 is provided in the processing tank 31. The light irradiation unit 80 is, for example, a light source such as a light emitting diode (LED). The light irradiation unit 80 is provided in the processing tank 31 facing the main surface of the wafer W. The main surface of the wafer W is, for example, the surface of the wafer W on which a resist film is formed. The light irradiation unit 80 may be provided in the processing tank 31 facing at least one of the main surface of the wafer W and the back surface opposite the main surface. The light irradiation unit 80 irradiates the wafer W with light of a wavelength that can transmit ozone water.

[0099] Here, there is a conventional technique for treating a wafer with ozone water while irradiating the wafer with ultraviolet light (see, for example, Japanese Patent Application Laid-Open No. 2002-280339).

[0100] However, with the above-mentioned technology, there is a risk that the ultraviolet light irradiated onto the wafer is absorbed by the ozone water, causing the temperature of the ozone water to rise. When the temperature of the ozone water rises, the ozone is decomposed (i.e., the ozone water is deactivated), and the ozone concentration in the ozone water is thought to decrease.

[0101] Therefore, the substrate processing apparatus 1 according to the first modification uses the light irradiation unit 80 provided in the processing tank 31 to irradiate the wafer W with light of a wavelength that can transmit the ozone water, thereby heating the wafer W. This reduces the temperature rise of the ozone water compared to when the wafer W is irradiated with ultraviolet light. Therefore, the wafer W can be heated to a given temperature while suppressing a decrease in ozone concentration due to a rise in the temperature of the ozone water. As a result, the substrate processing apparatus 1 according to the first modification can efficiently process the wafer W with ozone water.

[0102] FIG. 8 is a diagram showing an example of the relationship between the wavelength (nm) of light irradiated onto the wafer W from the light irradiator 80 and the light absorptance (%) of the wafer W. As shown in FIG. 8 , when the wavelength of light irradiated onto the wafer W from the light irradiator 80 is 350 nm or more and 1100 nm or less, the light absorptance of the wafer W can be increased to approximately 40% or more. However, when the wavelength of light irradiated onto the wafer W from the light irradiator 80 is greater than 600 nm, the light absorptance of the ozone water increases, causing the temperature of the ozone water around the wafer W to rise. Therefore, from the viewpoint of selectively heating the surface of the wafer W while suppressing a temperature rise in the ozone water around the wafer W, it is preferable that the wavelength of the light irradiated onto the wafer W from the light irradiator 80 be 350 nm or more and 600 nm or less. Hereinafter, light having a wavelength of 350 nm or more and 600 nm or less will be referred to as “specific wavelength light.” The light irradiator 80 irradiates the wafer W with specific wavelength light.

[0103] Returning to the description of FIG. 7 , the processing tank 31 has a light-transmitting portion 31c on one of two side walls facing the main surface and back surface of the wafer W. The light-transmitting portion 31c is in contact with ozone water and transmits light of a specific wavelength. The light-transmitting portion 31c is formed of a material that can transmit light of a specific wavelength and has high corrosion resistance against processing liquids such as ozone water. The light-transmitting portion 31c has higher corrosion resistance against processing liquids such as ozone water than other portions of the processing tank 31. For example, quartz can be used as a material for forming the light-transmitting portion 31c. The light irradiation unit 80 is disposed on an outer surface 31c1 of the light-transmitting portion 31c opposite the inner surface that contacts ozone water.

[0104] In this manner, by disposing the light irradiation unit 80 on the outer surface 31c1 of the light transmission unit 31c provided on one of the two side walls of the processing tank 31 that face the main surface and back surface of the wafer W, it is possible to efficiently irradiate the main surface of the wafer W with light of a specific wavelength from the light irradiation unit 80. Therefore, it is possible to efficiently heat the main surface of the wafer W.

[0105] Fig. 9 is a flowchart showing the substrate processing procedure executed by the substrate processing apparatus 1 according to the first modified embodiment. Each processing procedure shown in Fig. 9 is executed under the control of the control unit 71. Note that steps S101 to S114 in Fig. 9 are the same as steps S101 to S114 in Fig. 5, and therefore detailed description thereof will be omitted.

[0106] When the opening 31a of the processing tank 31 is sealed with the lid 37 (step S103), the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can transmit ozone water, i.e., light of a specific wavelength, thereby heating the wafer W to a given temperature (step S201).

[0107] Next, in the substrate processing apparatus 1, pressurized ozone water is supplied from the second nozzle 34 (step S104), whereby the ozone water stored in the processing tank 31 is pressurized.

[0108] As described above, in the first modification, the wafer W is heated by irradiating it with light of a specific wavelength while the ozone water stored in the processing tank 31 is pressurized. This makes it possible to heat the wafer W to a given temperature while suppressing a decrease in ozone concentration due to a rise in the temperature of the ozone water. As a result, the substrate processing apparatus 1 according to the first modification can process the wafer W more efficiently with ozone water.

[0109] Next, the control unit 71 maintains the amount of ozone water discharged from the first liquid discharge unit 35 at a given value (step S105).

[0110] Next, the control unit 71 determines whether the ozone water treatment of the wafer W has been completed (step S106). For example, the control unit 71 may terminate the ozone water treatment of the wafer W when a predetermined time has elapsed since the start of irradiation with the specific wavelength light in step S201.

[0111] In step S106, if the ozone water treatment of the wafer W has not been completed (No in step S106), the control unit 71 returns the process to step S201.

[0112] On the other hand, when it is determined that the ozone water treatment of the wafer W has been completed (Yes in step S106), the control unit 71 stops the irradiation of the specific wavelength light (step S202) and proceeds to step S107.

[0113] In the above embodiment and Modification 1, an example in which the wafer W is treated with ozone water, which is an example of a chemical liquid, has been described, but the wafer W may be treated with a chemical liquid other than ozone water. Therefore, in Modification 2, an example in which the wafer W is treated with a chemical liquid other than ozone water will be described.

[0114] Fig. 10 is a diagram showing the configuration of a substrate processing apparatus 1 according to Modification 2 of the embodiment. As shown in Fig. 10, the substrate processing apparatus 1 according to Modification 2 differs from the substrate processing apparatus 1 according to Modification 1 (see Fig. 6) in that it does not have an acid-based chemical liquid supply path 26 or an ozone gas supply path 41. The substrate processing apparatus 1 according to Modification 2 also differs from the substrate processing apparatus 1 according to Modification 1 (see Fig. 6) in that it has a chemical liquid supply path 27.

[0115] The chemical supply line 27 is connected to the mixer 23 and supplies a chemical other than ozone water to the mixer 23. In the second modification, the chemical other than ozone water is simply referred to as a "chemical." Such chemicals include, for example, SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), and hydrogen peroxide (H ２ O ２ ), dilute hydrofluoric acid (DHF), phosphoric acid (H ３ P.O. ４ ), sulfuric acid (H ２ SO ４ ), SPM (a mixture of sulfuric acid and hydrogen peroxide), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water.

[0116] The chemical supply path 27 includes, in order from the upstream side, a chemical supply source 27a, a valve 27b, a constant pressure valve 27c, and a flow meter 27d. The chemical supply source 27a is, for example, a cabinet or a circulation line capable of generating the chemical.

[0117] The constant pressure valve 27c adjusts the flow rate of the chemical solution supplied to the mixer 23 based on the flow rate of the chemical solution measured by the flow meter 27d. That is, the constant pressure valve 27c performs feedback control based on the flow rate of the chemical solution measured by the flow meter 27d.

[0118] In addition, in the substrate processing apparatus 1 according to the second modification, the components other than the chemical liquid supply path 27 are the same as those in the substrate processing apparatus 1 according to the first modification (see Figure 6) by replacing "ozone water" with "chemical liquid", and therefore the description thereof will be omitted.

[0119] Fig. 11 is a flowchart showing the substrate processing procedures executed by the substrate processing apparatus 1 according to the second modified embodiment. Each processing procedure shown in Fig. 11 is executed under the control of the control unit 71. Note that steps S112 to S114 in Fig. 11 are the same as steps S112 to S114 in Fig. 9, and therefore detailed description thereof will be omitted.

[0120] 11, before the start of the series of substrate processing steps, no processing liquid is stored in the processing bath 31. That is, before the start of the series of substrate processing steps, the processing bath 31 is empty.

[0121] 11 , in the substrate processing apparatus 1, first, a chemical liquid is supplied from the first nozzle 33 (step S301). Specifically, the control unit 71 controls the processing liquid generator 10 to open the valve 27b. As a result, the chemical liquid is supplied to the first nozzle 33 via the second supply path 24. The chemical liquid is then discharged from the outlet of the first nozzle 33 into the processing tank 31 and stored in the processing tank 31. After a predetermined time has elapsed, the control unit 71 controls the processing liquid generator 10 to close the valve 27b. As a result, the supply of the chemical liquid from the first nozzle 33 is stopped.

[0122] Next, in the substrate processing apparatus 1, the wafer W is loaded into the processing bath 31 (step S302). Specifically, the control unit 71 controls a substrate transfer device (not shown) that transfers the wafer W, and transfers the wafer W to the holder 32A arranged in the processing bath 31. As a result, the wafer W is placed at an immersion position in the processing bath 31. That is, the wafer W is immersed in the chemical solution stored in the processing bath 31.

[0123] Next, the control unit 71 controls the moving mechanism 371 to close the opening 31a of the treatment tank 31 with the lid 37 (step S303). Then, the control unit 71 controls the moving mechanism 381 to press the lid 37 toward the opening 31a with the locking member 38.

[0124] Next, the control unit 71 controls the light irradiation unit 80 to irradiate the wafer W with light of a wavelength that can transmit the chemical solution, i.e., light of a specific wavelength, to heat the wafer W to a given temperature (step S304).

[0125] Next, in the substrate processing apparatus 1, the pressurized chemical liquid is supplied from the second nozzle 34 (step S305), whereby the chemical liquid stored in the processing bath 31 is pressurized.

[0126] As described above, in the second modification, the wafer W is heated by irradiating it with light of a specific wavelength while the chemical stored in the processing tank 31 is pressurized. This makes it possible to heat the wafer W to a given temperature while suppressing a decrease in concentration due to a rise in the temperature of the chemical. As a result, the substrate processing apparatus 1 according to the second modification can process the wafer W more efficiently with the chemical.

[0127] Next, the control unit 71 maintains the amount of chemical solution discharged from the first liquid discharge unit 35 at a given value (step S306).

[0128] Next, the control unit 71 determines whether or not the chemical liquid processing of the wafer W has been completed (step S307). For example, the control unit 71 may terminate the chemical liquid processing of the wafer W when a predetermined time has elapsed since the start of irradiation with the specific wavelength light in step S304.

[0129] In step S307, if the chemical liquid processing of the wafer W has not been completed (step S307: No), the control unit 71 returns the process to step S304.

[0130] On the other hand, if it is determined that the chemical processing of the wafer W has been completed (step S307 Yes), the control unit 71 stops the irradiation of the specific wavelength light (step S308) and stops the supply of pressurized chemical liquid from the second nozzle 34 (step S309).

[0131] Next, the control unit 71 controls the valve opening of the backpressure valve 35c to a second valve opening that is greater than the first valve opening (step S310). For example, the control unit 71 fully opens the backpressure valve 35c. This reduces the pressure of the chemical solution stored in the treatment tank 31.

[0132] Next, the control unit 71 determines whether the measurement value of the pressure sensor 35b is equal to or less than a specified value (step S311). The control unit 71 repeats the determination process of step S311 until the measurement value of the pressure sensor 35b is equal to or less than the specified value (step S311 No).

[0133] On the other hand, if it is determined in step S311 that the measurement value of pressure sensor 35b is equal to or less than the specified value (Yes in step S311), control unit 71 controls movement mechanism 381 to release lock member 38 from pressing lid body 37. Thereafter, control unit 71 controls movement mechanism 371 to detach lid body 37 from opening 31a of treatment tank 31 (step S312).

[0134] Thereafter, the control unit 71 opens the valve 36 b for a predetermined time to discharge the chemical solution from the treatment tank 31 .

[0135] Next, in the substrate processing apparatus 1, a rinse process is performed on the wafer W (step S313). Specifically, the control unit 71 opens the valves 22d and 24d. As a result, DIW is stored in the processing tank 31 as a rinse liquid, and the wafer W is immersed in the DIW. As a result, the chemical liquid is removed from the wafer W.

[0136] Thereafter, the control unit 71 closes the valves 22d and 24d and opens the valve 36b for a predetermined time period to discharge the DIW from the treatment tank 31. Thereafter, the control unit 71 advances the process to step S112.

[0137] As described above, the substrate processing apparatus (for example, the substrate processing apparatus 1) according to the embodiment includes a processing tank (for example, the processing tank 31), a lid (for example, the lid 37), a chemical liquid supply unit (for example, the second nozzle 34), a pressurizing unit (for example, the pump 63), and a control unit (for example, the control unit 71). The processing tank has an opening (for example, the opening 31a) at its top, and a substrate (for example, a wafer W) is immersed in the chemical liquid for processing. The lid is configured to seal the opening of the processing tank. The chemical liquid supply unit supplies the chemical liquid to the processing tank. The pressurizing unit pressurizes the chemical liquid upstream of the chemical liquid supply unit. The control unit controls each component. The control unit immerses the substrate in the chemical liquid stored in the processing tank, seals the opening of the processing tank with the lid, and supplies the chemical liquid pressurized by the pressurizing unit from the chemical liquid supply unit to the processing tank, thereby pressurizing the chemical liquid stored in the processing tank. This allows the substrate to be efficiently processed with the chemical liquid.

[0138] Furthermore, the substrate processing apparatus according to the embodiment may include a chemical liquid discharge unit (for example, first liquid discharge unit 35) that discharges the chemical liquid from the processing tank. The control unit may maintain the amount of chemical liquid discharged from the chemical liquid discharge unit at a given value when the chemical liquid pressurized by the pressurizing unit is supplied from the chemical liquid supply unit to the processing tank. This allows the wafers W to be processed more efficiently with the chemical liquid.

[0139] The chemical solution discharge unit may also include a discharge path (e.g., discharge path 35 a) connected to a position in the processing bath above the substrate and below the opening, and a flow meter (e.g., flow meter 35 d) and a back pressure valve (e.g., back pressure valve 35 c) provided in the discharge path. The control unit may control the valve opening of the back pressure valve to a first valve opening so that the measurement value of the flow meter is maintained at a given value. This allows the wafer W to be processed more efficiently with the chemical solution.

[0140] Furthermore, after the processing of the substrate with the chemical solution in the processing tank is completed, the control unit may stop the supply of the pressurized chemical solution from the chemical solution supply unit, and then control the valve opening of the back pressure valve to a second valve opening degree that is greater than the first valve opening degree to reduce the pressure of the chemical solution stored in the processing tank, thereby preventing the chemical solution from splashing out of the processing tank.

[0141] The chemical discharge unit may also include a pressure sensor (e.g., pressure sensor 35b) provided upstream of the flow meter and back pressure valve in the discharge path. The control unit may detach the lid from the opening of the treatment tank when the detected value of the pressure sensor is equal to or lower than a specified value. This prevents the chemical from splashing out of the treatment tank.

[0142] Furthermore, the substrate processing apparatus according to the embodiment may include a separate chemical liquid supply unit that supplies the chemical liquid to the processing tank at a flow rate greater than the flow rate of the chemical liquid supplied from the chemical liquid supply unit to the processing tank. The control unit may supply the chemical liquid from the separate chemical liquid supply unit to the processing tank and store the chemical liquid in the processing tank before starting substrate processing with the chemical liquid in the processing tank. This allows the chemical liquid to be quickly stored in the processing tank.

[0143] The substrate processing apparatus according to the embodiment may further include a locking member (for example, locking member 38) that is removably provided in an insertion hole formed in the sidewall of the processing tank above the opening and presses the lid against the opening, thereby keeping the opening of the processing tank sealed by the lid.

[0144] Furthermore, the substrate processing apparatus according to the embodiment may further include a light irradiation unit (e.g., light irradiation unit 80) that is provided in the processing tank and that irradiates the substrate with light having a wavelength that can transmit the chemical solution. The control unit may use the light irradiation unit to irradiate the substrate with light having a wavelength that can transmit the chemical solution, thereby heating the substrate, while the chemical solution stored in the processing tank is pressurized. This allows the wafer W to be processed more efficiently with the chemical solution.

[0145] The wavelength of the light may be 350 nm or more and 600 nm or less, which makes it possible to selectively heat the surface of the substrate while suppressing a temperature rise in the chemical solution around the substrate.

[0146] The treatment tank may also have a light-transmitting portion (e.g., light-transmitting portion 31c) that contacts the chemical solution and transmits light on at least one of two side walls facing the main surface of the substrate and the back surface opposite the main surface. The light irradiation portion may be disposed on the outer surface (e.g., outer surface 31c1) of the light-transmitting portion opposite the inner surface that contacts the chemical solution. This allows the main surface of the substrate to be heated efficiently.

[0147] The chemical solutions are ozone water, SC1 (a mixture of ammonia and hydrogen peroxide), SC2 (a mixture of hydrochloric acid and hydrogen peroxide), and hydrogen peroxide (H ２ O ２ ), dilute hydrofluoric acid (DHF), phosphoric acid (H ３ P.O. ４ ), sulfuric acid (H ２ SO ４ The chemical may be SPM (a mixture of sulfuric acid and hydrogen peroxide), a mixture of hydrofluoric acid and hydrogen water, a mixture of ammonia and hydrogen water, or a mixture of hydrochloric acid and hydrogen water. This allows the wafer W to be processed more efficiently with the chemical.

[0148] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0149] REFERENCE SIGNS LIST 1 substrate processing apparatus 30 substrate processing section 31 processing tank 31a opening 31b insertion hole 31c light transmitting section 31c1 outer surface 33 first nozzle 34 second nozzle 35 first liquid discharge section 35a discharge path 35b pressure sensor 35c back pressure valve 35d flow meter 37 lid 38 locking member 63 pump 71 control section 80 light irradiation section W wafer

Claims

1. A substrate processing apparatus comprising: a processing tank having an opening at an upper portion for immersing a substrate in a chemical solution for processing; a lid configured to seal the opening of the processing tank; a chemical solution supply unit for supplying the chemical solution to the processing tank; a pressurizing unit for pressurizing the chemical solution upstream of the chemical solution supply unit; and a control unit for controlling each unit, wherein the control unit immerses the substrate in the chemical solution stored in the processing tank, seals the opening of the processing tank with the lid, and supplies the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank to pressurize the chemical solution stored in the processing tank.

2. The substrate processing apparatus according to claim 1, further comprising a chemical solution discharge unit for discharging the chemical solution from the processing tank, wherein the control unit maintains the discharge amount of the chemical solution from the chemical solution discharge unit at a given value when supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank.

3. The chemical solution discharge unit includes a discharge passage connected to a position above the substrate and below the opening in the processing tank, and a flow meter and a back pressure valve provided in the discharge passage. The control unit controls the valve opening degree of the back pressure valve to a first valve opening degree so that the measured value of the flow meter is maintained at a given value. The substrate processing apparatus according to claim 2.

4. After the processing of the substrate by the chemical solution in the processing tank is completed, the control unit stops the supply of the pressurized chemical solution from the chemical solution supply unit, and then controls the valve opening degree of the back pressure valve to a second valve opening degree larger than the first valve opening degree to depressurize the chemical solution stored in the processing tank. The substrate processing apparatus according to claim 3.

5. The chemical solution discharge unit includes a pressure sensor provided upstream of the flow meter and the back pressure valve in the discharge passage. When the detected value of the pressure sensor is equal to or less than a specified value, the control unit detaches the lid from the opening of the processing tank. The substrate processing apparatus according to claim 4.

6. The substrate processing apparatus according to claim 1, further comprising another chemical solution supply unit for supplying a chemical solution to the processing tank at a flow rate larger than the flow rate of the chemical solution supplied from the chemical solution supply unit to the processing tank. The control unit supplies a chemical solution from the another chemical solution supply unit to the processing tank to store the chemical solution in the processing tank before starting the processing of the substrate by the chemical solution in the processing tank.

7. The substrate processing apparatus according to claim 1, further comprising a lock member that is detachably provided in an insertion hole formed above the opening in the side wall of the processing tank and presses the lid toward the opening.

8. The substrate processing apparatus according to claim 1, further comprising a light irradiation unit that is provided in the processing tank and irradiates the substrate with light having a wavelength that allows the chemical solution to pass through. The control unit heats the substrate by irradiating the substrate with light having a wavelength that allows the chemical solution to pass through using the light irradiation unit while the chemical solution stored in the processing tank is in a pressurized state.

9. The wavelength of the light is 350 (nm) or more and 600 (nm) or less in the substrate processing apparatus according to claim 8.

10. The processing tank has a light transmissive portion that is in contact with the chemical solution and transmits the light on at least one of two side walls facing the main surface of the substrate and the back surface opposite to the main surface. The light irradiation unit is disposed on the outer surface opposite to the inner surface of the light transmissive portion that is in contact with the chemical solution in the processing tank in the substrate processing apparatus according to claim 8.

11. The chemical solution is ozone water, SC1 (a mixed solution of ammonia and hydrogen peroxide), SC2 (a mixed solution of hydrochloric acid and hydrogen peroxide), hydrogen peroxide water (H ２ O ２ ), dilute hydrofluoric acid (DHF), phosphoric acid (H ３ PO ４ ), sulfuric acid (H ２ SO ４ ), SPM (a mixed solution of sulfuric acid and hydrogen peroxide), a mixed solution of hydrofluoric acid and hydrogen water, a mixed solution of ammonia and hydrogen water, or a mixed solution of hydrochloric acid and hydrogen water. The substrate processing apparatus according to any one of claims 1 to 10.

12. A substrate processing method, comprising: using a substrate processing apparatus including a processing tank having an opening at an upper portion for immersing and processing a substrate in a chemical solution, a lid configured to seal the opening of the processing tank, a chemical solution supply unit for supplying the chemical solution to the processing tank, and a pressurizing unit for pressurizing the chemical solution upstream of the chemical solution supply unit; immersing the substrate in the chemical solution stored in the processing tank; sealing the opening of the processing tank with the lid; and supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank to pressurize the chemical solution stored in the processing tank.

13. A computer-readable storage medium having non-temporarily recorded thereon a program that causes a computer to implement procedures including: using a substrate processing apparatus including a processing tank having an opening at an upper portion for immersing and processing a substrate in a chemical solution, a lid configured to seal the opening of the processing tank, a chemical solution supply unit for supplying the chemical solution to the processing tank, and a pressurizing unit for pressurizing the chemical solution upstream of the chemical solution supply unit; immersing the substrate in the chemical solution stored in the processing tank; sealing the opening of the processing tank with the lid; and supplying the chemical solution pressurized by the pressurizing unit from the chemical solution supply unit to the processing tank to pressurize the chemical solution stored in the processing tank.

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