Light-emitting diode substrate, manufacturing method therefor, and display apparatus

Abstract

A light-emitting diode substrate, a manufacturing method therefor, and a display apparatus. The light-emitting diode substrate comprises a base substrate and a light-emitting diode located on the base substrate. The light-emitting diode comprises a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, an element passivation layer, and a second electrode. The element passivation layer covers side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. The second electrode comprises a first electrode portion and a second electrode portion which are connected to each other. The first electrode portion is located on the side of the second semiconductor layer away from the light-emitting layer, and is in contact with the second semiconductor layer. The second electrode portion is located on the side of the element passivation layer away from the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. According to the light-emitting diode substrate, costs can be reduced, and the yield can be increased.

Description

Light-emitting diode substrate, manufacturing method thereof, and display device Technical Field

[0001] Embodiments of the present disclosure relate to a light emitting diode substrate, a method for manufacturing a light emitting diode substrate, and a display device. Background Art

[0002] A micro light-emitting diode (Micro LED) is a light-emitting diode with a size in the micrometer range. Due to its small size, micro LEDs can be used as pixels on a display panel, and a display panel made using micro LEDs is called a micro LED display panel. Display devices made using micro LEDs have the advantages of self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, small size, and ultra-high resolution. In addition, the material of the light-emitting diode is not easily affected by the environment, so it is also highly stable, making it suitable for use in extreme environments such as high temperature or radiation.

[0003] Typically, a micro-LED consists of a P-type semiconductor layer, an N-type semiconductor layer, and a light-emitting layer located between the P-type and N-type semiconductor layers. The light-emitting layer can be a multi-quantum well layer, where electrons and holes in the LED combine to emit photons. In the process of manufacturing a micro-LED display panel, the micro-LEDs are grown on a semiconductor substrate and then transferred to a display substrate using mass transfer technology, thus forming a micro-LED display panel.

[0004] Summary of the Invention

[0005] At least one embodiment of the present disclosure provides a light-emitting diode substrate, a method for manufacturing the same, and a display device. By providing the aforementioned element passivation layer, the light-emitting diode can cover the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, thereby forming a second electrode through a patterning process. This second electrode, which is subsequently formed, is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. Thus, the light-emitting diode substrate can form light-emitting diodes on a base substrate, thereby reducing costs and improving yield.

[0006] At least one embodiment of the present disclosure provides a light-emitting diode substrate, which includes: a base substrate; a light-emitting diode located on the base substrate, the light-emitting diode including: a first electrode; a first semiconductor layer having a first semiconductor type and located on the first electrode; a light-emitting layer located on a side of the first semiconductor layer away from the base substrate; a second semiconductor layer having a second semiconductor type and located on a side of the light-emitting layer away from the first semiconductor layer; an element passivation layer covering the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; a second electrode including a first electrode portion and a second electrode portion connected to each other, the first electrode portion being located on a side of the second semiconductor layer away from the light-emitting layer and being arranged in contact with the second semiconductor layer, and the second electrode portion being located on a side of the element passivation layer away from the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0007] For example, in the light-emitting diode substrate provided in an embodiment of the present disclosure, the orthographic projection of the element passivation layer on the base substrate surrounds the center of the orthographic projection of the second semiconductor layer on the base substrate.

[0008] For example, in the light-emitting diode substrate provided in one embodiment of the present disclosure, the element passivation layer is partially located on the side of the second semiconductor layer away from the base substrate, and includes an element opening, which is configured to expose the second semiconductor layer, and the second electrode is arranged in contact with the second semiconductor layer through the element opening.

[0009] For example, in the light-emitting diode substrate provided in an embodiment of the present disclosure, the light-emitting diode substrate includes a plurality of light-emitting diodes, and a plurality of the second electrodes of the plurality of light-emitting diodes are connected to each other to form a second common electrode.

[0010] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: an auxiliary electrode, located on the side of the second common electrode away from the base substrate, the auxiliary electrode includes a reflective portion, and the reflective portion is located on the side of the second electrode portion of each second electrode away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0011] For example, in the light-emitting diode substrate provided in an embodiment of the present disclosure, the auxiliary electrode further includes a connecting portion, and the connecting portion is located between adjacent light-emitting diodes and connected to the reflecting portion.

[0012] For example, in the light-emitting diode substrate provided in an embodiment of the present disclosure, the second electrode includes a transparent conductive electrode, the auxiliary electrode includes a reflective electrode, and the conductivity of the auxiliary electrode is greater than that of the second electrode.

[0013] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: a pixel driving circuit layer, located on the base substrate and including a plurality of pixel driving circuits; and a first flat layer, located on a side of the pixel driving circuit layer away from the base substrate, the light-emitting diode is located on a side of the first flat layer away from the pixel driving circuit layer, the first flat layer includes a connecting via, and the first electrode is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connecting via.

[0014] For example, in the light-emitting diode substrate provided in an embodiment of the present disclosure, the light-emitting diode substrate includes a plurality of light-emitting diodes, and the plurality of first electrodes of the plurality of light-emitting diodes are connected to each other to form a first common electrode.

[0015] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: an element insulating layer, located on the side of the second electrode portion away from the element passivation layer; a third electrode, located on the side of the first electrode portion away from the base substrate; and a fourth electrode, located on the side of the first common electrode away from the base substrate, the fourth electrode being arranged in contact with the first common electrode and insulated from the second electrode by the element insulating layer.

[0016] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: a second flat layer, located on a side of the third electrode and the fourth electrode away from the base substrate; a first connecting electrode, located on a side of the second flat layer away from the base substrate; and a second connecting electrode, located on a side of the second flat layer away from the base substrate, the second flat layer including a first via hole and a second via hole, the first connecting electrode being connected to the third electrode through the first via hole, and the second connecting electrode being connected to the fourth electrode through the second via hole.

[0017] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: a driving circuit board, including a plurality of corresponding pixel driving circuits and a plurality of output electrodes, each of the output electrodes is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes are bonded to the plurality of first connecting electrodes corresponding to the plurality of light-emitting diodes.

[0018] For example, in the light-emitting diode substrate provided in one embodiment of the present disclosure, the element passivation layer extends between adjacent light-emitting diodes and forms an isolation passivation layer located between adjacent light-emitting diodes, and the isolation passivation layer is located on the side of the first common electrode away from the base substrate.

[0019] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: a third electrode, located on the side of the first electrode portion away from the base substrate; and a fourth electrode, located on the side of the isolation passivation layer away from the base substrate, the isolation passivation layer includes a third via hole, the third electrode is arranged in contact with the first electrode portion of the second electrode, and the fourth electrode is connected to the first common electrode through the third via hole.

[0020] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure further includes: a second flat layer, located on a side of the third electrode and the fourth electrode away from the base substrate; a first connecting electrode, located on a side of the second flat layer away from the base substrate; a second connecting electrode, located on a side of the second flat layer away from the base substrate, the second flat layer including a first via hole and a second via hole, the first connecting electrode being connected to the third electrode through the first via hole, and the second connecting electrode being connected to the fourth electrode through the second via hole.

[0021] For example, the light-emitting diode substrate provided in one embodiment of the present disclosure also includes: a driving circuit board, including a plurality of corresponding pixel driving circuits and a plurality of output electrodes, each of the output electrodes is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes are bonded to the plurality of first connecting electrodes corresponding to the plurality of light-emitting diodes.

[0022] At least one embodiment of the present disclosure further provides a display device, which includes the light-emitting diode substrate described in any one of the above items.

[0023] At least one embodiment of the present disclosure also provides a method for manufacturing a light-emitting diode substrate, which includes: forming a first electrode, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a base substrate, wherein the first semiconductor layer has a first semiconductor type and is located on the first electrode, the light-emitting layer is located on a side of the first semiconductor layer away from the base substrate, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer; forming an element passivation layer on the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; and forming a second electrode, wherein the second electrode includes a first electrode portion and a second electrode portion connected to each other, the first electrode portion is located on a side of the second semiconductor layer away from the light-emitting layer and is arranged in contact with the second semiconductor layer, and the second electrode portion is located on a side of the element passivation layer away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0024] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, forming the element passivation layer on the side of the first semiconductor layer, the light-emitting layer and the second semiconductor layer includes: forming a passivation material layer on the side of the first semiconductor layer, the light-emitting layer and the second semiconductor layer away from the base substrate; patterning the passivation material layer to form the element passivation layer, the orthographic projection of the element passivation layer on the base substrate surrounds the center of the orthographic projection of the second semiconductor layer on the base substrate.

[0025] For example, in the manufacturing method of the light-emitting diode substrate provided in one embodiment of the present disclosure, the element passivation layer is partially located on the side of the second semiconductor layer away from the base substrate, and includes an element opening, which is configured to expose the second semiconductor layer, and the second electrode is arranged in contact with the second semiconductor layer through the element opening.

[0026] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, forming the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer on the base substrate includes: forming a bonding metal layer on the base substrate; bonding at least one light-emitting diode wafer to the bonding metal layer, the light-emitting diode wafer including a substrate, a bonding electrode layer, a first semiconductor epitaxial layer, a light-emitting epitaxial layer and a second semiconductor epitaxial layer; peeling off the substrate of the light-emitting diode wafer; patterning the bonding metal layer, the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate to form the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer.

[0027] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, patterning the bonding metal layer, the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the substrate includes: patterning the bonding metal layer, the bonding electrode layer, the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the substrate to form a plurality of light-emitting element islands, each of the light-emitting element islands including the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer stacked in sequence.

[0028] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, bonding at least one light-emitting diode wafer to the bonding metal layer also includes: cutting multiple light-emitting diode wafers separately; and closely arranging the cut multiple light-emitting diode wafers on the base substrate.

[0029] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, forming an element passivation layer on the sides of the first semiconductor layer, the light-emitting layer and the second semiconductor layer includes: forming an element passivation layer on the sides of the first semiconductor layer, the light-emitting layer and the second semiconductor layer of each of the light-emitting element islands; forming the second electrode includes: forming the second electrode on the side of the multiple light-emitting element islands away from the base substrate, and the second electrodes of the multiple light-emitting element islands are interconnected to form a second common electrode.

[0030] For example, the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure also includes: forming an auxiliary electrode on the side of the second common electrode away from the base substrate, and the auxiliary electrode is at least partially located on the side of the second electrode part away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0031] For example, the manufacturing method of the light-emitting diode substrate provided by an embodiment of the present disclosure also includes: forming a pixel driving circuit layer on the base substrate; and forming a first flat layer on the side of the pixel driving circuit layer away from the base substrate, wherein the pixel driving circuit layer includes a plurality of pixel driving circuits; the light-emitting diode is located on the side of the first flat layer away from the pixel driving circuit layer, the first flat layer includes a connecting via, and the first electrode is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connecting via.

[0032] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, forming the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer on the base substrate includes: transferring the light-emitting diode wafer to a middle carrier substrate, the light-emitting diode wafer including a substrate, a first semiconductor epitaxial layer, a light-emitting epitaxial layer and a second semiconductor epitaxial layer; forming a bonding electrode layer on the side of the light-emitting diode wafer away from the middle carrier substrate; forming a bonding metal layer on the base substrate; bonding at least one of the light-emitting diode wafers to the bonding metal layer through the bonding electrode layer; peeling off the middle carrier substrate of the at least one light-emitting diode wafer; and patterning the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate to form the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer.

[0033] For example, in the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure, patterning the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate includes: patterning the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate to form a plurality of light-emitting element islands, each of the light-emitting element islands including the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer stacked in sequence.

[0034] For example, in the method for manufacturing a light-emitting diode substrate provided in an embodiment of the present disclosure, the plurality of first electrodes of the plurality of light-emitting element islands are interconnected through the bonding metal layer, and the bonding metal layer and the plurality of first electrodes form a first common electrode layer.

[0035] For example, the manufacturing method of the light-emitting diode substrate provided by an embodiment of the present disclosure also includes: forming an element insulating layer on the side of the second electrode portion of the second electrode of each light-emitting element island away from the element passivation layer; forming a third electrode and a fourth electrode on the side of each light-emitting element island away from the base substrate, the third electrode is located on the side of the first electrode portion of the second electrode away from the base substrate, the fourth electrode is located on the side of the bonding metal layer away from the base substrate, the fourth electrode is arranged in contact with the bonding metal layer, and is insulated from the second electrode by the element insulating layer.

[0036] For example, the manufacturing method of the light-emitting diode substrate provided by an embodiment of the present disclosure also includes: forming a second flat layer on the side of the third electrode and the fourth electrode away from the base substrate; forming a first connecting electrode and a second connecting electrode on the side of the second flat layer away from the base substrate, the first connecting electrode is located on the side of the second flat layer away from the base substrate, the second connecting electrode is located on the side of the second flat layer away from the base substrate, the second flat layer includes a first via hole and a second via hole, the first connecting electrode is connected to the third electrode through the first via hole, and the second connecting electrode is connected to the fourth electrode through the second via hole.

[0037] For example, the manufacturing method of the light-emitting diode substrate provided in an embodiment of the present disclosure also includes: bonding the driving circuit board to the first connecting electrode, the driving circuit board includes a plurality of corresponding pixel driving circuits and a plurality of output electrodes, each of the output electrodes is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes are bonded to a plurality of the first connecting electrodes corresponding to the plurality of light-emitting diodes.

[0038] For example, the manufacturing method of the light-emitting diode substrate provided by an embodiment of the present disclosure also includes: forming a third flat layer on the side of the first connecting electrode and the second connecting electrode away from the base substrate; forming a pixel driving circuit layer on the side of the third flat layer away from the base substrate, the pixel driving circuit layer including a plurality of pixel driving circuits, the third flat layer including a connecting via, and the first connecting electrode is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connecting via.

[0039] For example, the manufacturing method of the light-emitting diode substrate provided by an embodiment of the present disclosure also includes: in the process of forming an element passivation layer on the side of the first semiconductor layer, the light-emitting layer and the second semiconductor layer, the element passivation layer is extended between the adjacent light-emitting diodes, and an isolation passivation layer is formed between the adjacent light-emitting diodes, and the isolation passivation layer is located on the side of the bonding metal layer away from the base substrate; a third electrode and a fourth electrode are formed on the side of each light-emitting element island away from the base substrate, the isolation passivation layer includes a third via hole, the third electrode is arranged in contact with the first electrode portion of the second electrode, and the fourth electrode is connected to the first common electrode through the third via hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0041] FIG1 is a schematic diagram of a light emitting diode substrate provided in one embodiment of the present disclosure;

[0042] FIG2 is a schematic flow chart of a method for manufacturing a light-emitting diode substrate according to an embodiment of the present disclosure;

[0043] 3-7 are schematic diagrams of steps of a method for manufacturing a light-emitting diode substrate provided in one embodiment of the present disclosure;

[0044] FIG8 is a schematic diagram of bonding a light-emitting diode wafer to a substrate according to an embodiment of the present disclosure;

[0045] FIG9 is a schematic diagram of another light-emitting diode substrate provided by an embodiment of the present disclosure;

[0046] 10-22 are schematic diagrams showing steps of another method for manufacturing a light-emitting diode substrate according to an embodiment of the present disclosure;

[0047] FIG23 is a schematic diagram of another light-emitting diode substrate provided by an embodiment of the present disclosure;

[0048] FIG24 is a schematic diagram of another light-emitting diode substrate provided by an embodiment of the present disclosure;

[0049] FIG25 is a schematic diagram of another light-emitting diode substrate provided by an embodiment of the present disclosure;

[0050] FIG26 is a schematic diagram of a display device provided according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0051] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0052] Unless otherwise defined, technical or scientific terms used in this disclosure should have the ordinary meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are simply used to distinguish different components. The words "include" or "comprising" and similar terms mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0053] Since wafer-level chip processing costs are significantly higher than those of glass-based production lines, developing micro-LED processing on glass substrates has become a solution to reduce micro-LED costs. On the other hand, the biggest obstacle currently limiting the mass production of micro-LEDs is the need to transfer millions of micro-LEDs from wafers or intermediate substrates to a base substrate (such as a glass substrate). This process is very complex and difficult to ensure yield.

[0054] At least one embodiment of the present disclosure provides a light-emitting diode substrate, comprising a base substrate and a light-emitting diode (LED) located on the base substrate. The LED comprises a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a passivation layer, and a second electrode. The first semiconductor layer has a first semiconductor type and is located on the first electrode. The light-emitting layer is located on a side of the first semiconductor layer away from the base substrate. The second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer. The passivation layer covers the sides of the first, light-emitting, and second semiconductor layers. The second electrode comprises a first electrode portion and a second electrode portion connected to each other. The first electrode portion is located on a side of the second semiconductor layer away from the light-emitting layer and is in contact with the second semiconductor layer. The second electrode portion is located on a side of the passivation layer away from the sides of the first, light-emitting, and second semiconductor layers. The passivation layer covers the sides of the first, light-emitting, and second semiconductor layers, thereby enabling the formation of a second electrode through a patterning process. This insulates the subsequently formed second electrode from the first electrode, the first semiconductor layer, and the light-emitting layer. Thus, the LED substrate enables the formation of a light-emitting diode on the base substrate, thereby reducing costs and improving yield.

[0055] At least one embodiment of the present disclosure also provides a method for manufacturing a light-emitting diode substrate, comprising: forming a first electrode, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a base substrate, wherein the first semiconductor layer has a first semiconductor type and is located on the first electrode, the light-emitting layer is located on a side of the first semiconductor layer away from the base substrate, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer; forming an element passivation layer on the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; and forming a second electrode, the second electrode comprising a first electrode portion and a second electrode portion connected to each other, the first electrode portion being located on a side of the second semiconductor layer away from the light-emitting layer and in contact with the second semiconductor layer, and the second electrode portion being located on a side of the element passivation layer away from the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer. By forming the element passivation layer on the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the method for manufacturing a light-emitting diode can form a second electrode through a patterning process, and the second electrode formed subsequently is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. Thus, the method for manufacturing a light-emitting diode substrate can realize the formation of a light-emitting diode on a base substrate, thereby reducing costs and improving yield.

[0056] At least one embodiment of the present disclosure further provides a display device comprising the aforementioned LED substrate. Because the display device comprises the aforementioned LED substrate, it also has advantages such as low manufacturing cost and high yield. Furthermore, the display device also has advantages such as self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, compact size, and ultra-high resolution.

[0057] Hereinafter, the light-emitting diode substrate, the method for manufacturing the light-emitting diode substrate, and the display device provided by the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0058] FIG1 is a schematic diagram of a light emitting diode substrate provided in an embodiment of the present disclosure. The light emitting diode substrate 200 includes a base substrate 210 and a light emitting diode 100 located on the base substrate 210 . The light-emitting diode 100 includes a first electrode 110, a first semiconductor layer 120, a light-emitting layer 130, a second semiconductor layer 140, an element passivation layer 150 and a second electrode 160; the first semiconductor layer 120 has a first semiconductor type and is located on the first electrode 110; the light-emitting layer 130 is located on the side of the first semiconductor layer 120 away from the substrate 210; the second semiconductor layer 140 has a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 120; the element passivation layer 150 covers the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140; the second electrode 160 includes a first electrode portion 161 and a second electrode portion 162 connected to each other, the first electrode portion 161 is located on the side of the second semiconductor layer 140 away from the light-emitting layer 130 and is arranged in contact with the second semiconductor layer 140, and the second electrode portion 162 is located on the side of the element passivation layer 150 away from the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140. It should be noted that the first semiconductor type and the second semiconductor type are different. The first semiconductor type may be P-type and the second semiconductor type may be N-type, or the first semiconductor type may be N-type and the second semiconductor type may be P-type.

[0059] In the light-emitting diode substrate provided in the embodiment of the present disclosure, the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer can be covered by providing the above-mentioned element passivation layer, so that the second electrode can be formed by a patterning process, and the second electrode formed subsequently is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. As a result, the light-emitting diode substrate does not need to be prepared on a semiconductor wafer and then transferred to a base substrate through mass transfer technology. Instead, the light-emitting diode can be prepared on the base substrate, thereby reducing costs and improving yields. It should be noted that the above-mentioned preparation of the light-emitting diode does not require that all production steps of the light-emitting diode be completed on the base substrate.

[0060] On the other hand, because the device passivation layer can cover the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the second electrode can include a second electrode portion located on a side of the device passivation layer away from the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, thereby significantly reducing the resistance of the second electrode. In particular, when the second electrode is made of a transparent conductive material, the second electrode portion can significantly reduce the resistance of the second electrode, thereby improving the performance of the light-emitting diode.

[0061] In some examples, as shown in FIG. 1 , the orthographic projection of the element passivation layer 150 on the base substrate 210 surrounds the center of the orthographic projection of the second semiconductor layer 140 on the base substrate 210 , thereby surrounding the sides of the first semiconductor layer 120 , the light emitting layer 130 , and the second semiconductor layer 140 .

[0062] In some examples, as shown in FIG1 , the device passivation layer 150 is partially located on a side of the second semiconductor layer 140 away from the base substrate 210 and includes a device opening 155 configured to expose the second semiconductor layer 140. The second electrode 160 is disposed in contact with the second semiconductor layer 140 through the device opening 155. Thus, the device passivation layer can better insulate the second electrode from the first semiconductor layer and the light-emitting layer.

[0063] In some examples, as shown in FIG1 , the LED substrate 200 includes a plurality of LEDs 100, and the plurality of second electrodes 160 of the plurality of LEDs 100 are interconnected to form a second common electrode. In this case, the second electrode can be the cathode of the LED, connected to a common voltage, and the first electrode can be the anode of the LED, electrically connected to the corresponding pixel driving circuit.

[0064] In some examples, as shown in FIG1 , the LED substrate 200 further includes an auxiliary electrode 220, located on a side of the second common electrode away from the base substrate 210. The auxiliary electrode 220 includes a reflective portion 221, which is located on a side of the second electrode portion 162 of each second electrode 160 away from the first semiconductor layer 120, the light-emitting layer 130, and the second semiconductor layer 140. Thus, the auxiliary electrode can be used to further reduce the resistance of the second electrode and, on the other hand, improve light extraction efficiency through the reflective portion.

[0065] 1 , the auxiliary electrode 220 further includes a connecting portion 222, which is located between adjacent light-emitting diodes 100 and connected to the reflective portion 221. Thus, the auxiliary electrode can further reduce the resistance of the second electrode through the connecting portion.

[0066] In some examples, as shown in FIG. 1 , the second electrode 160 may be a transparent conductive electrode, the auxiliary electrode 220 may be a reflective electrode, and the conductivity of the auxiliary electrode 220 is greater than that of the second electrode 160 .

[0067] For example, the material of the second electrode 160 may be a transparent conductive oxide, such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), etc., and the material of the auxiliary electrode 220 may be one or more of magnesium, titanium, aluminum, silver, copper and zinc.

[0068] In some examples, as shown in FIG1 , the light-emitting diode substrate 200 further includes a pixel driving circuit layer 230 and a first planar layer 241 ; the pixel driving circuit layer 230 is located on the base substrate 210 and includes a plurality of pixel driving circuits; the first planar layer 241 is located on a side of the pixel driving circuit layer 230 away from the base substrate 210 ; the light-emitting diode 100 is located on a side of the first planar layer 241 away from the pixel driving circuit layer 230 ; the first planar layer 241 includes a connecting via 2410 , and the first electrode 110 is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer 230 through the connecting via 2410 . Thus, the light-emitting diode substrate can provide independent driving signals to the plurality of light-emitting diodes through the plurality of pixel driving circuits to achieve light-emitting display. It should be noted that the structure of the pixel driving circuit can refer to conventional designs; for example, the pixel driving circuit may include a transistor and a storage capacitor.

[0069] In some examples, as shown in FIG. 1 , the LED substrate 200 further includes a buffer layer 250 located between the base substrate 210 and the pixel driving circuit layer 230 . The buffer layer 250 can be used to shield defects on the base substrate 210 .

[0070] In some examples, as shown in FIG1 , the LED substrate 200 further includes a first color conversion layer 271 and a second color conversion layer 272. The plurality of LEDs 100 include a first LED 100A, a second LED 100B, and a third LED 100C. The first color conversion layer 271 is located on a side of the first LED 100A away from the substrate 210, and the second color conversion layer 272 is located on a side of the second LED 100B away from the substrate 210. The first color conversion layer 271 is configured to convert light emitted by the first LED 100A into light of a first color, and the second color conversion layer 272 is configured to convert light emitted by the second LED 100B into light of a second color.

[0071] For example, each light emitting diode 100 is configured to emit blue light. In this case, the first color is red and the second color is green.

[0072] In some examples, as shown in FIG1 , the pixel driving circuit layer 230 may include a semiconductor layer 231, a gate insulating layer 232, a gate layer 233, a passivation layer 234, and a source / drain metal layer 235. The semiconductor layer 231 is located on a side of the buffer layer 250 away from the base substrate 210, the gate insulating layer 232 is located on a side of the semiconductor layer 231 away from the base substrate 210, the gate layer 233 is located on a side of the gate insulating layer 232 away from the semiconductor layer 231, the passivation layer 234 is located on a side of the gate layer 233 away from the base substrate 210, and the source / drain metal layer 235 is located on a side of the passivation layer 234 away from the base substrate 210.

[0073] For example, the base substrate 210 may be a glass substrate. Of course, the embodiments of the present disclosure include but are not limited to this.

[0074] For example, the material of the buffer layer 250 may be polyimide. Of course, the embodiments of the present disclosure include but are not limited to this.

[0075] For example, the material of the semiconductor layer 231 may be polysilicon. Of course, the embodiments of the present disclosure include but are not limited to this, and the material of the semiconductor layer may also be other suitable semiconductor materials such as single crystal silicon, oxide semiconductor, etc.

[0076] For example, the gate layer 233 may be a single-layer structure or a stacked-layer structure including multiple conductive sub-layers. The material of the gate layer 233 includes one or more of copper, aluminum, silver, molybdenum, titanium, and zinc.

[0077] For example, the materials of the gate insulating layer 232 and the passivation layer 234 may be inorganic insulating materials. For example, the materials of the gate insulating layer 232 and the passivation layer 234 may be selected from one or more of silicon nitride, silicon oxide, or oxynitride. Of course, the embodiments of the present disclosure include but are not limited to these, and the materials of the gate insulating layer and the passivation layer may also be organic insulating materials.

[0078] For example, the material of the source / drain metal layer 235 can be selected from one or more of titanium nitride, tantalum nitride, aluminum, copper, cobalt, molybdenum, tungsten, palladium, gold, platinum, scandium, and yttrium.

[0079] For example, the material of the planar layer 240 may be an organic insulating material, such as resin.

[0080] One embodiment of the present disclosure further provides a method for manufacturing a light-emitting diode substrate, for manufacturing the light-emitting diode substrate shown in Figure 1. Figure 2 is a schematic flow chart of a method for manufacturing a light-emitting diode substrate provided in one embodiment of the present disclosure. As shown in Figure 2, the method for manufacturing a light-emitting diode substrate includes the following steps S201-S205.

[0081] Step S201: forming a first electrode, a first semiconductor layer, a light-emitting layer and a second semiconductor layer on a base substrate; the first semiconductor layer has a first semiconductor type and is located on the first electrode, the light-emitting layer is located on a side of the first semiconductor layer away from the base substrate, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer.

[0082] Step S202: forming a device passivation layer on the sides of the first semiconductor layer, the light emitting layer and the second semiconductor layer.

[0083] Step S203: forming a second electrode, the second electrode including a first electrode portion and a second electrode portion connected to each other, the first electrode portion being located on a side of the second semiconductor layer away from the light-emitting layer and being arranged in contact with the second semiconductor layer, and the second electrode portion being located on a side of the element passivation layer away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0084] In the method for manufacturing a light-emitting diode provided in an embodiment of the present disclosure, by forming an element passivation layer on the side of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, a second electrode can be formed through a patterning process, and the subsequently formed second electrode is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. As a result, the method for manufacturing a light-emitting diode substrate does not need to complete the preparation of the light-emitting diode on a semiconductor wafer and then transfer it to a base substrate through mass transfer technology. Instead, the preparation of the light-emitting diode can be completed on the base substrate, thereby reducing costs and improving yield. It should be noted that the above-mentioned preparation of the light-emitting diode does not require that all production steps of the light-emitting diode be completed on the base substrate.

[0085] On the other hand, because the device passivation layer can cover the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the second electrode can include a second electrode portion located on a side of the device passivation layer away from the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, thereby significantly reducing the resistance of the second electrode. In particular, when the second electrode is made of a transparent conductive material, the second electrode portion can significantly reduce the resistance of the second electrode, thereby improving the performance of the light-emitting diode.

[0086] 3-7 are schematic diagrams of the steps of a method for manufacturing a light-emitting diode substrate provided in one embodiment of the present disclosure.

[0087] As shown in Fig. 3, a buffer layer 250 is formed on a base substrate 210, and a pixel driving circuit layer 230 is formed on a side of the buffer layer 250 away from the base substrate 210. The pixel driving circuit layer 230 includes a plurality of pixel driving circuits.

[0088] For example, the base substrate 210 may be a glass substrate. Of course, the embodiments of the present disclosure include but are not limited to this.

[0089] For example, the buffer layer 250 is used to shield defects on the base substrate 210 and improve the subsequent film quality. The material of the buffer layer 250 can be polyimide. Of course, the embodiments of the present disclosure include but are not limited to this, and the buffer layer can also be made of other materials.

[0090] For example, the pixel driving circuit layer 230 may include a semiconductor layer 231, a gate insulating layer 232, a gate layer 233, a passivation layer 234, and a source-drain metal layer 235. The semiconductor layer 231 is located on a side of the buffer layer 250 away from the base substrate 210, the gate insulating layer 232 is located on a side of the semiconductor layer 231 away from the base substrate 210, the gate layer 233 is located on a side of the gate insulating layer 232 away from the semiconductor layer 231, the passivation layer 234 is located on a side of the gate layer 233 away from the base substrate 210, and the source-drain metal layer 235 is located on a side of the passivation layer 234 away from the base substrate 210.

[0091] For example, the material of the semiconductor layer 231 may be polysilicon. Of course, the embodiments of the present disclosure include but are not limited to this, and the material of the semiconductor layer may also be other suitable semiconductor materials such as single crystal silicon, oxide semiconductor, etc.

[0092] For example, the gate layer 233 may be a single-layer structure or a stacked-layer structure including multiple conductive sub-layers. The material of the gate layer 233 includes one or more of copper, aluminum, silver, molybdenum, titanium, and zinc.

[0093] For example, the materials of the gate insulating layer 232 and the passivation layer 234 may be inorganic insulating materials. For example, the materials of the gate insulating layer 232 and the passivation layer 234 may be selected from one or more of silicon nitride, silicon oxide, or oxynitride. Of course, the embodiments of the present disclosure include but are not limited to these, and the materials of the gate insulating layer and the passivation layer may also be organic insulating materials.

[0094] For example, the material of the source / drain metal layer 235 can be selected from one or more of titanium nitride, tantalum nitride, aluminum, copper, cobalt, molybdenum, tungsten, palladium, gold, platinum, scandium, and yttrium.

[0095] As shown in FIG. 3 , a first planar layer 241 is formed on a side of the pixel driving circuit layer 230 away from the base substrate 210 ; and a bonding metal layer 280 is formed on a side of the first planar layer 241 away from the base substrate 210 .

[0096] For example, the material of the planar layer 240 may be an organic insulating material, such as resin, etc. The material of the bonding metal layer 280 may be tin (Sn). Of course, the embodiments of the present disclosure include but are not limited to these, and the planar layer and the bonding metal layer may also be made of other materials.

[0097] As shown in FIG3 , the first planar layer 241 includes connection vias 2410, and the bonding metal layer 280 is electrically connected to the pixel driving circuit in the pixel driving circuit layer 230 through the connection vias 2410. It should be noted that after the bonding metal layer is subsequently patterned to form a first electrode, the first electrode can be electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connection vias.

[0098] As shown in FIG4 , at least one LED wafer 300 is bonded to the bonding metal layer 280. The LED wafer 300 includes a substrate 390, a bonding electrode layer 310, a first semiconductor epitaxial layer 320, a light-emitting epitaxial layer 330, and a second semiconductor epitaxial layer 340. That is, after the first semiconductor epitaxial layer 320, the light-emitting epitaxial layer 330, and the second semiconductor epitaxial layer 340 are grown on the substrate 390, the LED wafer 300 is directly transferred to the base substrate 210 via the bonding electrode layer 310 and the bonding metal layer 280.

[0099] As shown in FIG. 4 , the substrate 390 of the light-emitting diode wafer 300 is peeled off; for example, the substrate 390 may be peeled off by using a laser lift-off process.

[0100] For example, the substrate 390 may be a sapphire substrate. Of course, the embodiments of the present disclosure include but are not limited to this.

[0101] For example, the first semiconductor epitaxial layer 320 and the second semiconductor epitaxial layer 340 include the same semiconductor material, such as gallium nitride. Of course, the embodiments of the present disclosure include but are not limited to this, and the first semiconductor epitaxial layer and the second semiconductor epitaxial layer may also be made of other semiconductor materials.

[0102] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type may be P-type and the second semiconductor type may be N-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type may also be N-type and the second semiconductor type may be P-type.

[0103] 5 , the second semiconductor epitaxial layer 340 is thinned to remove surface materials. For example, the second semiconductor epitaxial layer 340 can be thinned by an etching process or a chemical mechanical polishing process.

[0104] For example, the thickness of the thinned second semiconductor epitaxial layer 340 may be in the range of 0.5 um to 2 um.

[0105] As shown in FIG5 , the bonding metal layer 280, the bonding electrode layer 310, the first semiconductor epitaxial layer 320, the light-emitting epitaxial layer 330, and the second semiconductor epitaxial layer 340 on the substrate 210 are patterned to form the first electrode 110, the first semiconductor layer 120, the light-emitting layer 130, and the second semiconductor layer 140. The patterned bonding metal layer 280 and the bonding electrode layer 310 can form a plurality of first electrodes 110, the patterned first semiconductor epitaxial layer 320 can form a plurality of first semiconductor layers 120, the patterned light-emitting epitaxial layer 330 can form a plurality of light-emitting layers 130, and the patterned second semiconductor epitaxial layer 340 can form a plurality of second semiconductor layers 140.

[0106] As shown in FIG5 , the patterning of the bonding metal layer 280, the bonding electrode layer 310, the first semiconductor epitaxial layer 320, the light-emitting epitaxial layer 330, and the second semiconductor epitaxial layer 340 on the substrate 210 includes: patterning the bonding metal layer 280, the bonding electrode layer 310, the first semiconductor epitaxial layer 320, the light-emitting epitaxial layer 330, and the second semiconductor epitaxial layer 340 on the substrate 210 to form a plurality of light-emitting element islands 380, each light-emitting element island 380 including a first electrode 110, a first semiconductor layer 120, a light-emitting layer 130, and a second semiconductor layer 140 stacked in sequence. In other words, the manufacturing process of the light-emitting diode substrate provided by the embodiment of the present disclosure only requires growing the required epitaxial layer on the wafer, while the process step of patterning the epitaxial layer to form a plurality of light-emitting diodes is completed on the substrate, thereby greatly reducing the manufacturing cost. It should be noted that the above-mentioned light-emitting element islands correspond one-to-one to the light-emitting diodes finally formed.

[0107] For example, the orthographic projection of the light emitting element island on the substrate may be circular or elliptical. Of course, the embodiments of the present disclosure include but are not limited to the above.

[0108] For example, the size of the orthographic projection of the light emitting element island on the substrate may be within the range of 2-20 microns.

[0109] As shown in Figure 6, forming an element passivation layer 150 on the side of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140 includes: forming a passivation material layer 1500 on the side of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140 away from the base substrate 210; patterning the passivation material layer 1500 to form the element passivation layer 150, and the orthographic projection of the element passivation layer 150 on the base substrate 210 surrounds the center of the orthographic projection of the second semiconductor layer 140 on the base substrate 210, thereby surrounding the side of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140.

[0110] For example, the material of the device passivation layer 150 can be selected from at least one of silicon oxide and aluminum oxide, and the thickness thereof can be within the range of 0.2-1.0 um.

[0111] As shown in FIG6 , the device passivation layer 150 is partially located on a side of the second semiconductor layer 140 away from the base substrate 210 and includes a device opening 155 configured to expose the second semiconductor layer 140 . The second electrode 160 is arranged in contact with the second semiconductor layer 140 through the device opening 155 .

[0112] As shown in FIG. 7 , the second electrode 160 is formed on a side of the plurality of light emitting element islands 380 away from the base substrate 210 , and the second electrodes 160 of the plurality of light emitting element islands 380 are connected to each other to form a second common electrode.

[0113] As shown in FIG7 , the method for manufacturing a light-emitting diode further includes forming an auxiliary electrode 220 on a side of the second common electrode away from the base substrate 210, with the auxiliary electrode 220 being at least partially located on a side of the second electrode portion 162 away from the first semiconductor layer 120, the light-emitting layer 130, and the second semiconductor layer 140. Thus, the auxiliary electrode can be used to further reduce the resistance of the second electrode and improve light extraction efficiency.

[0114] For example, as shown in FIG7 , the auxiliary electrode 220 includes a reflective portion 221 , which is located on a side of the second electrode portion 162 of each second electrode 160 away from the side surfaces of the first semiconductor layer 120 , the light emitting layer 130 , and the second semiconductor layer 140 , thereby improving light extraction efficiency.

[0115] 7 , the auxiliary electrode 220 further includes a connecting portion 222, which is located between adjacent light emitting diodes 100 and connected to the reflecting portion 221. Thus, the auxiliary electrode can further reduce the resistance of the second electrode through the connecting portion.

[0116] For example, the second electrode 160 may be a transparent conductive electrode, the auxiliary electrode 220 may be a reflective electrode, and the conductivity of the auxiliary electrode 220 is greater than that of the second electrode 160 .

[0117] For example, the material of the second electrode 160 may be a transparent conductive oxide, such as indium tin oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), etc., and the material of the auxiliary electrode 220 may be one or more of magnesium, titanium, aluminum, silver, copper and zinc.

[0118] For example, the thickness of the auxiliary electrode may be within the range of 0.5-2.0 μm. Of course, the embodiments of the present disclosure include but are not limited to this, and the auxiliary electrode may also have other suitable thicknesses.

[0119] Figure 8 is a schematic diagram of bonding an LED wafer to a substrate, according to one embodiment of the present disclosure. As shown in Figure 8 , before bonding the LED wafers to the substrate, multiple LED wafers 300 are individually diced; the diced LED wafers 300 are then closely arranged on substrate 210. Since wafers are typically circular in shape, dicing the multiple LED wafers into rectangular shapes facilitates close arrangement, thereby improving substrate utilization and enabling the direct formation of a display substrate.

[0120] 9 is a schematic diagram of another light emitting diode substrate provided in an embodiment of the present disclosure. The light emitting diode substrate 200 includes a base substrate 210 and a light emitting diode 100 located on the base substrate 210 . The light-emitting diode 100 includes a first electrode 110, a first semiconductor layer 120, a light-emitting layer 130, a second semiconductor layer 140, an element passivation layer 150 and a second electrode 160; the first semiconductor layer 120 has a first semiconductor type and is located on the first electrode 110; the light-emitting layer 130 is located on the side of the first semiconductor layer 120 away from the substrate 210; the second semiconductor layer 140 has a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 120; the element passivation layer 150 covers the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140; the second electrode 160 includes a first electrode portion 161 and a second electrode portion 162 connected to each other, the first electrode portion 161 is located on the side of the second semiconductor layer 140 away from the light-emitting layer 130 and is arranged in contact with the second semiconductor layer 140, and the second electrode portion 162 is located on the side of the element passivation layer 150 away from the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140. It should be noted that the first semiconductor type and the second semiconductor type are different. The first semiconductor type may be N-type, and the second semiconductor type may be P-type.

[0121] In the light-emitting diode substrate provided in the embodiment of the present disclosure, the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer can be covered by providing the above-mentioned element passivation layer, so that the second electrode can be formed by a patterning process, and the second electrode formed subsequently is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. As a result, the light-emitting diode substrate does not need to be prepared on a semiconductor wafer and then transferred to a base substrate through mass transfer technology. Instead, the light-emitting diode can be prepared on the base substrate, thereby reducing costs and improving yields. It should be noted that the above-mentioned preparation of the light-emitting diode does not require that all production steps of the light-emitting diode be completed on the base substrate.

[0122] In some examples, as shown in FIG9 , the orthographic projection of the element passivation layer 150 on the base substrate 210 surrounds the center of the orthographic projection of the second semiconductor layer 140 on the base substrate 210 , thereby surrounding the sides of the first semiconductor layer 120 , the light emitting layer 130 , and the second semiconductor layer 140 .

[0123] In some examples, as shown in FIG9 , the device passivation layer 150 is partially located on a side of the second semiconductor layer 140 away from the base substrate 210 and includes a device opening 155 configured to expose the second semiconductor layer 140. The second electrode 160 is disposed in contact with the second semiconductor layer 140 through the device opening 155. Thus, the device passivation layer can better insulate the second electrode from the first semiconductor layer and the light-emitting layer.

[0124] In some examples, as shown in FIG9 , the LED substrate 200 includes a plurality of LEDs 100 , and the plurality of first electrodes 110 of the plurality of LEDs 100 are interconnected to form a first common electrode. That is, in this embodiment, the first electrode may be a cathode, and the second electrode may be an anode.

[0125] In some examples, as shown in FIG9 , the LED substrate 200 further includes an element insulating layer 290, a third electrode 170, and a fourth electrode 180. The element insulating layer 290 is located on the side of the second electrode portion 162 away from the element passivation layer 150. The third electrode 170 is located on the side of the first electrode portion 161 away from the base substrate 210. The fourth electrode 180 is located on the side of the first common electrode away from the base substrate 210. The fourth electrode 180 is disposed in contact with the first common electrode and is insulated from the second electrode 160 by the element insulating layer 290. Thus, the third electrode can be used to apply a driving signal or an anode signal to the second electrode, while the fourth electrode can be used to apply a common signal or a cathode signal to the first common electrode.

[0126] In the LED substrate provided in this embodiment, the electrodes for providing drive signals and common signals to each LED are formed on the same side of the base substrate, facilitating subsequent bonding with a driver circuit board or directly forming a drive circuit on the base substrate. Consequently, the LED substrate can further reduce manufacturing costs.

[0127] In some examples, as shown in FIG9 , the LED substrate 200 further includes a second planar layer 242, a first connecting electrode 191, and a second connecting electrode 192. The second planar layer 242 is located on the side of the third electrode 170 and the fourth electrode 180 away from the base substrate 210. The first connecting electrode 191 is located on the side of the second planar layer 242 away from the base substrate 210. The second connecting electrode 192 is located on the side of the second planar layer 242 away from the base substrate 210. The second planar layer 242 includes a first via hole V1 and a second via hole V2. The first connecting electrode 191 is connected to the third electrode 170 via the first via hole V1, and the second connecting electrode 192 is connected to the fourth electrode 180 via the second via hole V2. Thus, the LED substrate can have the first connecting electrode 191 and the second connecting electrode 192 located on the same plane, thereby facilitating bonding to a driver circuit board.

[0128] In some examples, as shown in Figure 9, the light-emitting diode substrate 200 also includes a driving circuit board 400, including a plurality of corresponding pixel driving circuits and a plurality of output electrodes 420, each output electrode 420 is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes 420 are bonded to the plurality of first connecting electrodes 191 corresponding to the plurality of light-emitting diodes 100, thereby applying a driving signal to the second electrode 160 through the first connecting electrode 191 and the third electrode 170.

[0129] One embodiment of the present disclosure also provides another method for manufacturing a light-emitting diode substrate, which is used to manufacture the light-emitting diode substrate shown in Figure 9. The method for manufacturing the light-emitting diode substrate includes: forming a first electrode, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a base substrate; the first semiconductor layer has a first semiconductor type and is located on the first electrode, the light-emitting layer is located on a side of the first semiconductor layer away from the base substrate, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer; forming an element passivation layer on the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; forming a second electrode, the second electrode including a first electrode portion and a second electrode portion connected to each other, the first electrode portion being located on a side of the second semiconductor layer away from the light-emitting layer and being in contact with the second semiconductor layer, and the second electrode portion being located on a side of the element passivation layer away from the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

[0130] In the method for manufacturing a light-emitting diode provided in an embodiment of the present disclosure, by forming an element passivation layer on the side of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, a second electrode can be formed through a patterning process, and the subsequently formed second electrode is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. As a result, the method for manufacturing a light-emitting diode substrate does not need to complete the preparation of the light-emitting diode on a semiconductor wafer and then transfer it to a base substrate through mass transfer technology. Instead, the preparation of the light-emitting diode can be completed on the base substrate, thereby reducing costs and improving yield. It should be noted that the above-mentioned preparation of the light-emitting diode does not require that all production steps of the light-emitting diode be completed on the base substrate.

[0131] 10-22 are schematic diagrams of the steps of another method for manufacturing a light-emitting diode substrate provided in one embodiment of the present disclosure.

[0132] As shown in FIG. 10 , the LED wafer 300 is transferred onto the intermediate substrate 450 . The LED wafer 300 includes a substrate 390 , a first semiconductor epitaxial layer 320 , a light-emitting epitaxial layer 330 and a second semiconductor epitaxial layer 340 .

[0133] For example, the intermediate substrate 450 may be a silicon substrate or a glass substrate, and the LED wafer 300 is then transferred to the intermediate substrate 450 using a temporary bonding adhesive 460 .

[0134] For example, the substrate 390 may be a sapphire substrate. Of course, the embodiments of the present disclosure include but are not limited to this, and the substrate may also be other suitable substrates.

[0135] For example, the first semiconductor epitaxial layer 320 and the second semiconductor epitaxial layer 340 include the same semiconductor material, such as gallium nitride. Of course, the embodiments of the present disclosure include but are not limited to this, and the first semiconductor epitaxial layer and the second semiconductor epitaxial layer may also be made of other semiconductor materials.

[0136] For example, the first semiconductor type and the second semiconductor type are different, the first semiconductor type may be N-type and the second semiconductor type may be P-type. Of course, the embodiments of the present disclosure include but are not limited to this, the first semiconductor type may also be P-type and the second semiconductor type may be N-type.

[0137] As shown in FIG. 11 , the substrate 390 of the LED wafer 300 is peeled off by laser lift-off technology.

[0138] As shown in Figure 12, the exposed first semiconductor epitaxial layer 320 is thinned to remove the surface material. For example, the first semiconductor epitaxial layer 320 can be thinned by an etching process or a chemical mechanical polishing process.

[0139] For example, the thickness of the thinned first semiconductor epitaxial layer 320 may be in the range of 0.5 um to 2 um.

[0140] As shown in FIG. 12 , a bonding electrode layer 310 is formed on a side of the LED wafer 300 away from the carrier substrate 450 .

[0141] For example, the bonding electrode layer 310 may be made of a transparent conductive oxide material, such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0142] For example, the thickness of the bonding electrode layer 310 may be within the range of 0.1-0.3 μm. Of course, the embodiments of the present disclosure include but are not limited to the above.

[0143] For example, the bonding electrode layer 310 may be subjected to a high-temperature annealing process.

[0144] As shown in FIG13 , a bonding metal layer 280 is formed on a base substrate 210, and at least one LED wafer 300 is bonded to the bonding metal layer 280 via a bonding electrode layer 310. Thus, in this process, a single LED wafer can be bonded to a base substrate to complete the fabrication of LEDs on the base substrate. Alternatively, multiple LED wafers can be bonded to the base substrate, thereby forming a large number of LEDs on the base substrate without requiring a mass transfer process.

[0145] As shown in FIG. 14 , the intermediate substrate 450 and the temporary bonding adhesive 460 of at least one LED wafer 300 are peeled off by a laser lift-off process.

[0146] As shown in FIG15 , the bonding electrode layer 310 , the first semiconductor epitaxial layer 320 , the light-emitting epitaxial layer 330 and the second semiconductor epitaxial layer 340 on the base substrate 210 are patterned to form the first electrode 110 , the first semiconductor layer 120 , the light-emitting layer 130 and the second semiconductor layer 140 .

[0147] For example, as shown in FIG15 , the bonding electrode layer 310, the first semiconductor epitaxial layer 320, the light-emitting epitaxial layer 330, and the second semiconductor epitaxial layer 340 on the base substrate 210 can be patterned to form a plurality of light-emitting element islands 380; each light-emitting element island 380 includes a first electrode 110, a first semiconductor layer 120, a light-emitting layer 130, and a second semiconductor layer 140 stacked in sequence. In other words, the manufacturing process of the light-emitting diode substrate provided by the embodiment of the present disclosure only requires growing the required epitaxial layer on the wafer, and the process step of patterning the epitaxial layer to form a plurality of light-emitting diodes is completed on the base substrate, thereby greatly reducing the manufacturing cost. It should be noted that the above-mentioned light-emitting element islands correspond one-to-one to the light-emitting diodes finally formed.

[0148] For example, the orthographic projection of the light emitting element island on the substrate may be circular or elliptical. Of course, the embodiments of the present disclosure include but are not limited to the above.

[0149] For example, the size of the orthographic projection of the light emitting element island on the substrate may be within the range of 2-20 microns.

[0150] As shown in Figure 15, in the above-mentioned patterning process, the bonding metal layer 280 may not be patterned, so that the multiple first electrodes 110 of the multiple light-emitting element islands 380 are interconnected through the bonding metal layer 280, and the bonding metal layer 280 and the multiple first electrodes 310 form a first common electrode layer.

[0151] As shown in FIG. 16 , a device passivation layer 150 is formed on the side surfaces of the first semiconductor layer 120 , the light emitting layer 130 , and the second semiconductor layer 140 .

[0152] For example, the material of the device passivation layer 150 can be selected from at least one of silicon oxide and aluminum oxide, and the thickness thereof can be within the range of 0.2-1.0 um.

[0153] 17 , the second electrodes 160 are formed on a side of the plurality of light emitting element islands 380 away from the base substrate 210. The second electrodes 160 of adjacent light emitting element islands 380 are spaced apart.

[0154] For example, the second electrode 160 may be a reflective electrode, such as a stacked structure formed of ITO / Ag / ITO.

[0155] As shown in FIG. 18 , the method for manufacturing the light emitting diode substrate further includes forming a device insulating layer 290 on a side of the second electrode portion 162 of the second electrode 160 of each light emitting device island 380 away from the device passivation layer 150 .

[0156] For example, the material of the device insulating layer 290 may be at least one of silicon oxide, silicon nitride, or silicon oxynitride.

[0157] For example, the thickness of the device insulating layer 290 may be in the range of 500-1000 angstroms. Of course, the embodiments of the present disclosure include but are not limited to the above.

[0158] As shown in FIG19 , a third electrode 170 and a fourth electrode 180 are formed on the side of each light-emitting element island 380 away from the substrate 210. The third electrode 170 is located on the side of the first electrode portion 161 of the second electrode 160 away from the substrate 210, and the fourth electrode 180 is located on the side of the bonding metal layer 280 away from the substrate 210. The fourth electrode 180 is disposed in contact with the bonding metal layer 280 and is insulated from the second electrode 160 by the element insulating layer 290. Thus, the third electrode can be used to apply a drive signal or an anode signal to the second electrode, while the fourth electrode can be used to apply a common signal or a cathode signal to the first common electrode.

[0159] For example, the third electrode and the fourth electrode can be formed by using the same conductive layer through the same patterning process, thereby further reducing the manufacturing cost.

[0160] For example, the materials of the third electrode and the fourth electrode may be a stacked structure composed of Ti / Al / Ti. Of course, the embodiments of the present disclosure include but are not limited to this.

[0161] For example, the thickness of the third electrode and the fourth electrode may be within the range of 0.5 μm to 2 μm. Of course, the embodiments of the present disclosure include but are not limited to the above.

[0162] Figure 20 is a schematic plan view of the third electrode and the fourth electrode in the light emitting diode substrate provided in one embodiment of the present disclosure. As shown in Figure 20, the third electrode 170 and the fourth electrode 180 are separated by the element insulating layer 290, thereby being insulated from each other.

[0163] As shown in FIG21 , a second planar layer 242 is formed on the side of the third electrode 170 and the fourth electrode 180 away from the base substrate 210. A first connecting electrode 191 and a second connecting electrode 192 are formed on the side of the second planar layer 242 away from the base substrate 210. The first connecting electrode 191 is located on the side of the second planar layer 242 away from the base substrate 210, and the second connecting electrode 192 is located on the side of the second planar layer 242 away from the base substrate 210. The second planar layer 242 includes a first via hole V1 and a second via hole V2. The first connecting electrode 191 is connected to the third electrode 170 through the first via hole V1, and the second connecting electrode 192 is connected to the fourth electrode 180 through the second via hole V2. As a result, the LED substrate can have the first connecting electrode 191 and the second connecting electrode 192 located on the same plane, facilitating bonding to a driver circuit board.

[0164] As shown in Figure 22, the driving circuit board 400 is bonded to the first connecting electrode 191. The driving circuit board 400 includes a plurality of corresponding pixel driving circuits and a plurality of output electrodes 420. Each output electrode 420 is connected to the output end of the corresponding pixel driving circuit. The plurality of output electrodes 420 are bonded to the plurality of first connecting electrodes 191 corresponding to the plurality of light-emitting diodes 100, thereby applying a driving signal to the second electrode 160 through the first connecting electrode 191 and the third electrode 170.

[0165] FIG23 is a schematic diagram of another light-emitting diode substrate provided in an embodiment of the present disclosure. Unlike the light-emitting diode substrate shown in FIG9 , this light-emitting diode substrate does not use a driver circuit board, but instead forms a pixel driver circuit layer directly on a base substrate. As shown in FIG23 , after forming the first connection electrode 191 and the second connection electrode 192, a third flat layer 243 can be formed on the side of the first connection electrode 191 and the second connection electrode 192 away from the base substrate 210; a pixel driver circuit layer 230 is formed on the side of the third flat layer 243 away from the base substrate 210. The pixel driver circuit layer 230 includes a plurality of pixel driver circuits, and the third flat layer 243 includes connection vias 2430. The first connection electrode 191 is electrically connected to the corresponding pixel driver circuit in the pixel driver circuit layer 230 through the connection vias 2430.

[0166] FIG24 is a schematic diagram of another light emitting diode substrate provided in an embodiment of the present disclosure. As shown in FIG24 , the light emitting diode substrate 200 includes a base substrate 210 and a light emitting diode 100 located on the base substrate 210 . The light-emitting diode 100 includes a first electrode 110, a first semiconductor layer 120, a light-emitting layer 130, a second semiconductor layer 140, an element passivation layer 150 and a second electrode 160; the first semiconductor layer 120 has a first semiconductor type and is located on the first electrode 110; the light-emitting layer 130 is located on the side of the first semiconductor layer 120 away from the substrate 210; the second semiconductor layer 140 has a second semiconductor type and is located on the side of the light-emitting layer 130 away from the first semiconductor layer 120; the element passivation layer 150 covers the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140; the second electrode 160 includes a first electrode portion 161 and a second electrode portion 162 connected to each other, the first electrode portion 161 is located on the side of the second semiconductor layer 140 away from the light-emitting layer 130 and is arranged in contact with the second semiconductor layer 140, and the second electrode portion 162 is located on the side of the element passivation layer 150 away from the side surfaces of the first semiconductor layer 120, the light-emitting layer 130 and the second semiconductor layer 140. It should be noted that the first semiconductor type and the second semiconductor type are different. The first semiconductor type may be N-type, and the second semiconductor type may be P-type.

[0167] In the light-emitting diode substrate provided in the embodiment of the present disclosure, the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer can be covered by providing the above-mentioned element passivation layer, so that the second electrode can be formed by a patterning process, and the second electrode formed subsequently is insulated from the first electrode, the first semiconductor layer, and the light-emitting layer. As a result, the light-emitting diode substrate does not need to be prepared on a semiconductor wafer and then transferred to a base substrate through mass transfer technology. Instead, the light-emitting diode can be prepared on the base substrate, thereby reducing costs and improving yields. It should be noted that the above-mentioned preparation of the light-emitting diode does not require that all production steps of the light-emitting diode be completed on the base substrate.

[0168] In some examples, as shown in FIG. 24 , the orthographic projection of the element passivation layer 150 on the base substrate 210 surrounds the center of the orthographic projection of the second semiconductor layer 140 on the base substrate 210 , thereby surrounding the sides of the first semiconductor layer 120 , the light emitting layer 130 , and the second semiconductor layer 140 .

[0169] In some examples, as shown in FIG24 , the device passivation layer 150 is partially located on a side of the second semiconductor layer 140 away from the base substrate 210 and includes a device opening 155 configured to expose the second semiconductor layer 140. The second electrode 160 is disposed in contact with the second semiconductor layer 140 through the device opening 155. Thus, the device passivation layer can better insulate the second electrode from the first semiconductor layer and the light-emitting layer.

[0170] In some examples, as shown in FIG24 , the LED substrate 200 includes a plurality of LEDs 100 , and the plurality of first electrodes 110 of the plurality of LEDs 100 are interconnected to form a first common electrode. That is, in this embodiment, the first electrode may be a cathode, and the second electrode may be an anode.

[0171] In some examples, as shown in FIG. 24 , the element passivation layer 150 extends between adjacent light emitting diodes 100 and forms an isolation passivation layer 158 between adjacent light emitting diodes 100 . The isolation passivation layer 158 is located on a side of the first common electrode away from the base substrate 210 .

[0172] For example, as shown in Figure 24, in the step of forming the element passivation layer 150, the element passivation layer 150 between adjacent light-emitting diodes 100 may not be etched, so that the element passivation layer extends between adjacent light-emitting diodes 100 and forms an isolation passivation layer 158 located between adjacent light-emitting diodes 100.

[0173] In some examples, as shown in FIG24 , the LED substrate further includes a third electrode 170 and a fourth electrode 180 . The third electrode 170 is located on the side of the first electrode portion 161 away from the base substrate 210 , and the fourth electrode 180 is located on the side of the isolation passivation layer 295 away from the base substrate 210 . The isolation passivation layer 295 includes a third via hole V3 . The third electrode 170 is disposed in contact with the first electrode portion 161 of the second electrode 160 . The fourth electrode 180 is connected to the first common electrode through the third via hole V3 . As a result, the LED substrate does not require an additional device insulation layer.

[0174] In some examples, as shown in FIG24 , the light-emitting diode substrate 200 further includes a second flat layer 242, a first connecting electrode 191, and a second connecting electrode 192; the second flat layer 242 is located on a side of the third electrode 170 and the fourth electrode 180 away from the base substrate 210; the first connecting electrode 191 is located on a side of the second flat layer 242 away from the base substrate 210; the second connecting electrode 192 is located on a side of the second flat layer 242 away from the base substrate 210; the second flat layer 242 includes a first via hole V1 and a second via hole V2, the first connecting electrode 191 is connected to the third electrode 170 through the first via hole V1, and the second connecting electrode 192 is connected to the fourth electrode 180 through the second via hole V2.

[0175] In some examples, as shown in Figure 24, the light-emitting diode substrate 200 also includes a driving circuit board 400, including a plurality of corresponding pixel driving circuits and a plurality of output electrodes 420, each output electrode 420 is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes 420 are bonded to the plurality of first connecting electrodes 191 corresponding to the plurality of light-emitting diodes 100, thereby applying a driving signal to the second electrode 160 through the first connecting electrode 191 and the third electrode 170.

[0176] FIG25 is a schematic diagram of another light-emitting diode substrate provided by an embodiment of the present disclosure. Unlike the light-emitting diode substrate shown in FIG24 , this light-emitting diode substrate does not use a driver circuit board, but instead forms a pixel driver circuit layer directly on a base substrate. As shown in FIG25 , after forming the first connection electrode 191 and the second connection electrode 192, a third flat layer 243 can be formed on the side of the first connection electrode 191 and the second connection electrode 192 away from the base substrate 210. A pixel driver circuit layer 230 is formed on the side of the third flat layer 243 away from the base substrate 210. The pixel driver circuit layer 230 includes a plurality of pixel driver circuits, and the third flat layer 243 includes connection vias 2430. The first connection electrode 191 is electrically connected to the corresponding pixel driver circuit in the pixel driver circuit layer 230 through the connection vias 2430.

[0177] One embodiment of the present disclosure also provides a display device. Figure 26 is a schematic diagram of a display device provided in one embodiment of the present disclosure. As shown in Figure 26, the display device 500 includes the aforementioned display substrate 200. As a result, the display substrate has advantages such as self-luminescence, full solid-state, long life, high brightness, high contrast, low power consumption, compact size, and ultra-high resolution.

[0178] For example, the display device can be a display device such as an organic light emitting diode display device, as well as any product or component with a display function, such as a television, digital camera, mobile phone, watch, tablet computer, laptop computer, navigator, etc. that includes the display device, but this embodiment is not limited to this.

[0179] There are a few points to note:

[0180] (1) The drawings of the embodiments of the present disclosure only involve structures related to the embodiments of the present disclosure, and other structures can refer to general designs.

[0181] (2) In the absence of conflict, features in the same embodiment and different embodiments of the present disclosure may be combined with each other.

[0182] The foregoing description is merely an exemplary embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. The scope of protection of the present disclosure is determined by the appended claims.

Claims

1. A light-emitting diode substrate, comprising: substrate; A light emitting diode is located on the substrate. Wherein, the light emitting diode comprises: a first electrode; a first semiconductor layer having a first semiconductor type and located on the first electrode; a light-emitting layer, located on a side of the first semiconductor layer away from the substrate; a second semiconductor layer having a second semiconductor type and being located on a side of the light emitting layer away from the first semiconductor layer; a device passivation layer, covering the side surfaces of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer; The second electrode includes a first electrode portion and a second electrode portion that are connected to each other, wherein the first electrode portion is located on a side of the second semiconductor layer away from the light-emitting layer and is arranged in contact with the second semiconductor layer, and the second electrode portion is located on a side of the element passivation layer away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

2. The light-emitting diode substrate according to claim 1, wherein The orthographic projection of the element passivation layer on the base substrate surrounds the center of the orthographic projection of the second semiconductor layer on the base substrate.

3. The light-emitting diode substrate according to claim 2, wherein: The element passivation layer is partially located on a side of the second semiconductor layer away from the base substrate and includes an element opening configured to expose the second semiconductor layer. The second electrode is arranged in contact with the second semiconductor layer through the element opening.

4. The light-emitting diode substrate according to any one of claims 1 to 3, wherein: The light emitting diode substrate includes a plurality of light emitting diodes, and a plurality of the second electrodes of the plurality of light emitting diodes are connected to each other to form a second common electrode.

5. The light-emitting diode substrate according to claim 4, further comprising: an auxiliary electrode, located on a side of the second common electrode away from the base substrate, The auxiliary electrode includes a reflective portion, and the reflective portion is located on the side of the second electrode portion of each second electrode away from the first semiconductor layer, the light emitting layer, and the second semiconductor layer. One side. The light-emitting diode substrate according to claim 5 , wherein: The auxiliary electrode further includes a connecting portion, which is located between adjacent light-emitting diodes and connected to the reflecting portion.

7. The light-emitting diode substrate according to claim 5, wherein: The second electrode includes a transparent conductive electrode, the auxiliary electrode includes a reflective electrode, and the conductivity of the auxiliary electrode is greater than that of the second electrode.

8. The light-emitting diode substrate according to claim 5, further comprising: A pixel driving circuit layer, located on the base substrate and comprising a plurality of pixel driving circuits; as well as The first planar layer is located on a side of the pixel driving circuit layer away from the base substrate. The light-emitting diode is located on a side of the first flat layer away from the pixel driving circuit layer. The first flat layer includes a connecting via hole, and the first electrode is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connecting via hole.

9. The light-emitting diode substrate according to any one of claims 1 to 3, wherein: The light emitting diode substrate includes a plurality of light emitting diodes, and the first electrodes of the plurality of light emitting diodes are connected to each other to form a first common electrode.

10. The light-emitting diode substrate according to claim 9, further comprising: an element insulating layer, located on a side of the second electrode portion away from the element passivation layer; a third electrode, located on a side of the first electrode portion away from the base substrate; as well as a fourth electrode, located on a side of the first common electrode away from the base substrate, The fourth electrode is arranged in contact with the first common electrode and is insulated from the second electrode by the element insulating layer.

11. The light-emitting diode substrate according to claim 10, further comprising: a second planar layer, located on a side of the third electrode and the fourth electrode away from the substrate; a first connecting electrode, located on a side of the second flat layer away from the base substrate; as well as The second connecting electrode is located on a side of the second flat layer away from the base substrate. The second planar layer includes a first via hole and a second via hole, the first connecting electrode is connected to the third electrode through the first via hole, and the second connecting electrode is connected to the fourth electrode through the second via hole.

12. The light-emitting diode substrate according to claim 11, further comprising: The driving circuit board includes a plurality of corresponding pixel driving circuits and a plurality of output electrodes. Wherein, each of the output electrodes is connected to the output terminal of the corresponding pixel driving circuit, and the plurality of The output electrodes are bonded to the first connection electrodes corresponding to the light emitting diodes.

13. The light-emitting diode substrate according to claim 9, wherein: The element passivation layer extends between adjacent light emitting diodes to form an isolation passivation layer located between adjacent light emitting diodes. The isolation passivation layer is located on a side of the first common electrode away from the base substrate.

14. The light-emitting diode substrate according to claim 13, further comprising: a third electrode, located on a side of the first electrode portion away from the base substrate; as well as a fourth electrode, located on a side of the isolation passivation layer away from the substrate, The isolation passivation layer includes a third via hole, the third electrode is arranged in contact with the first electrode portion of the second electrode, and the fourth electrode is connected to the first common electrode through the third via hole.

15. The light-emitting diode substrate according to claim 14, further comprising: a second planar layer, located on a side of the third electrode and the fourth electrode away from the substrate; a first connecting electrode, located on a side of the second flat layer away from the base substrate; The second connecting electrode is located on a side of the second flat layer away from the base substrate. The second planar layer includes a first via hole and a second via hole, the first connecting electrode is connected to the third electrode through the first via hole, and the second connecting electrode is connected to the fourth electrode through the second via hole.

16. The light-emitting diode substrate according to claim 15, further comprising: The driving circuit board includes a plurality of corresponding pixel driving circuits and a plurality of output electrodes. Each of the output electrodes is connected to an output end of the corresponding pixel driving circuit, and the multiple output electrodes are bonded to the multiple first connecting electrodes corresponding to the multiple light-emitting diodes.

17. A display device comprising the light emitting diode substrate according to any one of claims 1 to 16.

18. A method for manufacturing a light-emitting diode substrate, comprising: forming a first electrode, a first semiconductor layer, a light-emitting layer, and a second semiconductor layer on a substrate, wherein the first semiconductor layer has a first semiconductor type and is located on the first electrode, the light-emitting layer is located on a side of the first semiconductor layer away from the substrate, and the second semiconductor layer has a second semiconductor type and is located on a side of the light-emitting layer away from the first semiconductor layer; forming a device passivation layer on the sides of the first semiconductor layer, the light emitting layer and the second semiconductor layer; and forming a second electrode, The second electrode includes a first electrode portion and a second electrode portion that are connected to each other, the first electrode portion is located on a side of the second semiconductor layer away from the light-emitting layer and is arranged in contact with the second semiconductor layer, and the second electrode portion is located on a side of the element passivation layer away from the first semiconductor layer, the light-emitting layer, and the second semiconductor layer.

19. The method for manufacturing a light emitting diode substrate according to claim 18, wherein: Forming the element passivation layer on the sides of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes: forming a passivation material layer on a side of the first semiconductor layer, the light emitting layer, and the second semiconductor layer away from the substrate; patterning the passivation material layer to form the device passivation layer, The orthographic projection of the element passivation layer on the base substrate surrounds the center of the orthographic projection of the second semiconductor layer on the base substrate.

20. The method for manufacturing a light emitting diode substrate according to claim 19, wherein: The element passivation layer is partially located on a side of the second semiconductor layer away from the base substrate and includes an element opening configured to expose the second semiconductor layer. The second electrode is arranged in contact with the second semiconductor layer through the element opening.

21. The method for manufacturing a light emitting diode substrate according to any one of claims 18 to 20, wherein: Forming the first electrode, the first semiconductor layer, the light emitting layer, and the second semiconductor layer on the base substrate includes: forming a bonding metal layer on the base substrate; Bonding at least one light-emitting diode wafer to the bonding metal layer, the light-emitting diode wafer comprising a substrate, a bonding electrode layer, a first semiconductor epitaxial layer, a light-emitting epitaxial layer, and a second semiconductor epitaxial layer; peeling off the substrate of the light-emitting diode wafer; The bonding metal layer, the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the substrate are patterned to form the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer.

22. The method for manufacturing a light emitting diode substrate according to claim 21, wherein: Patterning the bonding metal layer, the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer, and the second semiconductor epitaxial layer on the substrate includes: The bonding metal layer, the bonding electrode layer, the bonding electrode layer, The first semiconductor epitaxial layer, the light emitting epitaxial layer and the second semiconductor epitaxial layer are patterned to form a plurality of light emitting element islands. Each of the light-emitting element islands includes the first electrode, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer stacked in sequence.

23. The method for manufacturing a light emitting diode substrate according to claim 22, wherein: Bonding at least one light emitting diode wafer to the bonding metal layer further comprises: cutting the plurality of light-emitting diode wafers respectively; and The cut multiple light emitting diode wafers are closely arranged on the base substrate.

24. The method for manufacturing a light emitting diode substrate according to claim 22, wherein: Forming a device passivation layer on the side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer includes: forming a device passivation layer on the side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer of each of the light emitting device islands; Forming the second electrode includes: forming the second electrode on a side of the plurality of light emitting element islands away from the base substrate; The second electrodes of the plurality of light-emitting element islands are connected to each other to form a second common electrode.

25. The method for manufacturing a light emitting diode substrate according to claim 24, further comprising: An auxiliary electrode is formed on a side of the second common electrode away from the base substrate, The auxiliary electrode is at least partially located on a side of the second electrode portion away from the side surfaces of the first semiconductor layer, the light emitting layer, and the second semiconductor layer.

26. The method for manufacturing a light emitting diode substrate according to claim 21, further comprising: forming a pixel driving circuit layer on the base substrate; as well as A first flat layer is formed on a side of the pixel driving circuit layer away from the base substrate, wherein the pixel driving circuit layer includes a plurality of pixel driving circuits; the light-emitting diode is located on a side of the first flat layer away from the pixel driving circuit layer, the first flat layer includes a connecting via, and the first electrode is electrically connected to the corresponding pixel driving circuit in the pixel driving circuit layer through the connecting via.

27. The method for manufacturing a light emitting diode substrate according to any one of claims 18 to 20, wherein: Forming the first electrode, the first semiconductor layer, the light emitting layer, and the second semiconductor layer on the base substrate includes: The light emitting diode wafer is transferred to the intermediate carrier substrate, wherein the light emitting diode wafer includes a substrate, a first a semiconductor epitaxial layer, a light emitting epitaxial layer, and a second semiconductor epitaxial layer; forming a bonding electrode layer on a side of the light emitting diode wafer away from the intermediate substrate; forming a bonding metal layer on the base substrate; bonding at least one of the light-emitting diode wafers to the bonding metal layer through the bonding electrode layer; peeling the intermediate substrate of the at least one light emitting diode wafer; and The bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate are patterned to form the first electrode, the first semiconductor layer, the light-emitting layer and the second semiconductor layer.

28. The method for manufacturing a light emitting diode substrate according to claim 27, wherein: Patterning the bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer, and the second semiconductor epitaxial layer on the substrate includes: The bonding electrode layer, the first semiconductor epitaxial layer, the light-emitting epitaxial layer and the second semiconductor epitaxial layer on the base substrate are patterned to form a plurality of light-emitting element islands. Each of the light-emitting element islands includes the first electrode, the first semiconductor layer, the light-emitting layer, and the second semiconductor layer stacked in sequence.

29. The method for manufacturing a light emitting diode substrate according to claim 28, wherein: The plurality of first electrodes of the plurality of light-emitting element islands are connected to each other through the bonding metal layer, and the bonding metal layer and the plurality of first electrodes form a first common electrode layer.

30. The method for manufacturing a light emitting diode substrate according to claim 29, further comprising: forming an element insulating layer on a side of the second electrode portion of the second electrode of each light-emitting element island away from the element passivation layer; A third electrode and a fourth electrode are formed on a side of each light emitting element island away from the base substrate. Among them, the third electrode is located on the side of the first electrode portion of the second electrode away from the base substrate, the fourth electrode is located on the side of the bonding metal layer away from the base substrate, the fourth electrode is arranged in contact with the bonding metal layer, and is insulated from the second electrode by the element insulation layer.

31. The method for manufacturing a light emitting diode substrate according to claim 30, further comprising: forming a second planar layer on a side of the third electrode and the fourth electrode away from the base substrate; A first connecting electrode and a second connecting electrode are formed on a side of the second flat layer away from the base substrate. Connect the electrodes, The first connecting electrode is located on a side of the second flat layer away from the base substrate, the second connecting electrode is located on a side of the second flat layer away from the base substrate, the second flat layer includes a first via hole and a second via hole, the first connecting electrode is connected to the third electrode through the first via hole, and the second connecting electrode is connected to the fourth electrode through the second via hole.

32. The method for manufacturing a light emitting diode substrate according to claim 31, further comprising: bonding the driving circuit board to the first connecting electrode, The driving circuit board includes a plurality of corresponding pixel driving circuits and a plurality of output electrodes, each of the output electrodes is connected to the output end of the corresponding pixel driving circuit, and the plurality of output electrodes are bonded to the plurality of first connecting electrodes corresponding to the plurality of light-emitting diodes.

33. The method for manufacturing a light emitting diode substrate according to claim 31, further comprising: forming a third planar layer on a side of the first connecting electrode and the second connecting electrode away from the base substrate; A pixel driving circuit layer is formed on a side of the third flat layer away from the base substrate. The pixel driving circuit layer includes a plurality of pixel driving circuits, the third planar layer includes connection vias, and the first connection electrodes are electrically connected to the corresponding pixel driving circuits in the pixel driving circuit layer through the connection vias.

34. The method for manufacturing a light emitting diode substrate according to claim 29, further comprising: In the process of forming the element passivation layer on the sides of the first semiconductor layer, the light-emitting layer, and the second semiconductor layer, the element passivation layer is extended between adjacent light-emitting diodes, and an isolation passivation layer is formed between adjacent light-emitting diodes, wherein the isolation passivation layer is located on a side of the bonding metal layer away from the substrate; A third electrode and a fourth electrode are formed on a side of each light emitting element island away from the base substrate. The isolation passivation layer includes a third via hole, the third electrode is arranged in contact with the first electrode portion of the second electrode, and the fourth electrode is connected to the first common electrode through the third via hole.

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