Semiconductor device

Abstract

This semiconductor device comprises: a first insulating layer; a second insulating layer positioned on one side in a first direction of the first insulating layer; a first shielding layer positioned between the first insulating layer and the second insulating layer in the first direction; a first semiconductor element having a first electrode and a second electrode; a second semiconductor element having a third electrode and a fourth electrode; a first conductive layer in electrical connection with the first electrode; and a second conductive layer in electrical connection with the fourth electrode. The polarity of the second electrode and the polarity of the third electrode are different from each other. The third electrode is in electrical connection with the second electrode. At least one of the second electrode and the third electrode is positioned on the opposite side to the first shielding layer with respect to the second insulating layer. The first shielding layer is a conductor. The first conductive layer is in electrical connection with the first shielding layer.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Conventionally, semiconductor devices equipped with multiple semiconductor elements having switching functions, such as MOSFETs and IGBTs, have been widely known. Such semiconductor devices are mainly used for power conversion. Patent Document 1 discloses an example of a semiconductor device equipped with multiple semiconductor elements having switching functions. In the semiconductor device, multiple wiring layers (metal patterns 4a, 4b) are arranged on the surface of an insulating substrate. Furthermore, in the semiconductor device, multiple wiring relay regions are arranged on the surface of the insulating substrate. Each of the multiple wiring relay regions, together with the multiple wiring layers, forms a conductive path of the semiconductor device.

[0003] The semiconductor device has a parasitic capacitance associated with one of the multiple wiring relay areas, which outputs AC power converted by the multiple semiconductor elements, and the insulating substrate that supports it. Voltage changes over time are relatively significant in the wiring relay area. When a conductor such as a heat sink is joined to the insulating substrate, such voltage changes and the parasitic capacitance cause leakage current from the heat sink. If the leakage current becomes larger, there is concern about noise affecting the surrounding area of ​​the semiconductor device. Therefore, a method for suppressing leakage current to the outside is desired.

[0004] JP 2009-158787 A

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device that can reduce noise caused by leakage current to the outside.

[0006] The semiconductor device provided by the present disclosure comprises a first insulating layer, a second insulating layer located on one side of the first insulating layer in a first direction, a first shielding layer located between the first insulating layer and the second insulating layer in the first direction, a first semiconductor element having a first electrode and a second electrode, a second semiconductor element having a third electrode and a fourth electrode, a first conductive layer conducting to the first electrode, and a second conductive layer conducting to the fourth electrode. The polarity of the second electrode and the polarity of the third electrode are different from each other. The third electrode is conducting to the second electrode. At least one of the second electrode and the third electrode is located on the opposite side of the second insulating layer from the first shielding layer. The first shielding layer is a conductor. The first conductive layer is conducting to the first shielding layer.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view corresponding to FIG. 1, seen through the sealing resin. FIG. 3 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 2. FIG. 5 is a cross-sectional view taken along line V-V in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. 2. FIG. 8 is a partial enlarged view of FIG. 5, showing a first semiconductor element and its vicinity. FIG. 9 is a partial enlarged view of FIG. 5, showing a second semiconductor element and its vicinity. FIG. 10 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, seen through the sealing resin. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 10. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 10. FIG. 13 is a plan view of a semiconductor device according to a third embodiment of the present disclosure, seen through the sealing resin. FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 13 . FIG. 15 is a cross-sectional view taken along line XV-XV in FIG. 13 . FIG. 16 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure, seen through the encapsulating resin. FIG. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16 . FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 16 . FIG. 19 is a plan view of a semiconductor device according to a fifth embodiment of the present disclosure, seen through the encapsulating resin. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19 . FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 19 . FIG. 22 is a plan view of a semiconductor device according to a sixth embodiment of the present disclosure, seen through the encapsulating resin. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22 . FIG. 24 is a cross-sectional view taken along line XXIV-XXIV in FIG. 22 . 25 is a cross-sectional view taken along line XXV-XXV in FIG. 22. FIG. 26 is a plan view of a semiconductor device according to a seventh embodiment of the present disclosure, seen through the sealing resin. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 26. FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 26. FIG. 29 is a partially enlarged view of FIG. 27. FIG. 30 is a plan view of a semiconductor device according to an eighth embodiment of the present disclosure, seen through the sealing resin. FIG. 31 is a cross-sectional view taken along line XXXI-XXXI in FIG. 30. FIG. 32 is a cross-sectional view taken along line XXXII-XXXII in FIG. 30.Fig. 33 is a plan view of a semiconductor device according to a ninth embodiment of the present disclosure, seen through a sealing resin. Fig. 34 is a cross-sectional view taken along line XXXIV-XXXIV in Fig. 33. Fig. 35 is a cross-sectional view taken along line XXXV-XXXV in Fig. 33. Fig. 36 is a cross-sectional view taken along line XXXVI-XXXVI in Fig. 33.

[0009] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0010] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 9 . The semiconductor device A10 includes a first insulating layer 11, a second insulating layer 12, a heat dissipation layer 13, a first shielding layer 14, a first conductive layer 21, a second conductive layer 22, a third conductive layer 23, a plurality of first semiconductor elements 31, a plurality of second semiconductor elements 32, a first power terminal 41, a second power terminal 42, a third power terminal 43, and a sealing resin 60. The semiconductor device A10 further includes a plurality of first intermediate wirings 16, first signal wirings 24 to fourth signal wirings 27, first signal terminals 44 to 47, a first conductive member 48, a second conductive member 49, and first wires 51 to eighth wires 58. For ease of understanding, FIG. 2 shows the sealing resin 60 in a see-through view. In FIG. 2, the outline of the see-through sealing resin 60 is indicated by an imaginary line (double-dashed line).

[0011] In the description of the semiconductor device A10, for convenience, for example, the normal direction of the first mounting surface 111 of the first insulating layer 11 described later will be referred to as the "first direction z." Also, for example, an example of a direction perpendicular to the first direction z will be referred to as the "second direction x." Also, for example, a direction perpendicular to the first direction z and the second direction x will be referred to as the "third direction y." Furthermore, in the description of the semiconductor device A10, "overlapping" refers to two different elements, and includes cases where one element entirely overlaps the other, as well as cases where one element partially overlaps the other.

[0012] The semiconductor device A10 converts DC power applied to the first power terminal 41 and the second power terminal 42 into AC power using a plurality of first semiconductor elements 31 and a plurality of second semiconductor elements 32. The converted AC power is input to a power supply target such as a motor from a third power terminal 43. The semiconductor device A10 constitutes part of a power conversion circuit such as an inverter.

[0013] As shown in FIGS. 4 to 7 , the sealing resin 60 covers the plurality of first semiconductor elements 31 and the plurality of second semiconductor elements 32. The sealing resin 60 has electrical insulating properties. The sealing resin 60 is made of a material containing, for example, black epoxy resin. The sealing resin 60 has a top surface 61, a bottom surface 62, a first side surface 63, a second side surface 64, a third side surface 65, and a fourth side surface 66.

[0014] 4 to 7, the top surface 61 faces the same side in the first direction z as a first mounting surface 111 of the first insulating layer 11, which will be described later. The bottom surface 62 faces the opposite side to the top surface 61 in the first direction z.

[0015] As shown in Figures 1 and 3 to 5, the first side surface 63 and the second side surface 64 face opposite each other in the second direction x. Each of the first side surface 63 and the second side surface 64 is connected to the top surface 61 and the bottom surface 62. As shown in Figures 1, 3, 6 and 7, the third side surface 65 and the fourth side surface 66 face opposite each other in the third direction y. Each of the third side surface 65 and the fourth side surface 66 is connected to the top surface 61 and the bottom surface 62.

[0016] As shown in FIGS. 4 to 7 , the first insulating layer 11 carries the second insulating layer 12 and the first shielding layer 14. The first insulating layer 11 is made of, for example, ceramics containing aluminum nitride (AlN). Alternatively, the first insulating layer 11 may be made of, for example, a material containing resin. The dimension of the first insulating layer 11 in the first direction z is equal to or greater than the dimension of the second insulating layer 12 in the first direction z. The first insulating layer 11 has a first mounting surface 111 facing one side in the first direction z. A portion of the first mounting surface 111 is covered with a sealing resin 60.

[0017] As shown in FIGS. 4 to 7 , the second insulating layer 12 is located on one side of the first insulating layer 11 in the first direction z. The second insulating layer 12 carries a first conductive layer 21, a second conductive layer 22, a third conductive layer 23, a first signal wiring 24, a second signal wiring 25, a third signal wiring 26, and a fourth signal wiring 27. The second insulating layer 12 is laminated on the first shielding layer 14. The second insulating layer 12 is made of a material containing, for example, a resin. As shown in FIG. 2 , the second insulating layer 12 is located inward from the periphery 111A of the first mounting surface 111 of the first insulating layer 11 when viewed in the first direction z. The second insulating layer 12 has a second mounting surface 121 facing the same side as the first mounting surface 111 in the first direction z. A portion of the second mounting surface 121 is covered with a sealing resin 60.

[0018] As shown in FIGS. 4 to 7 , the heat dissipation layer 13 is located on the opposite side of the first insulating layer 11 from the first shielding layer 14 in the first direction z. The heat dissipation layer 13 is bonded to the first insulating layer 11. As shown in FIG. 3 , the heat dissipation layer 13 is exposed to the outside from the bottom surface 62 of the sealing resin 60. When the semiconductor device A10 is in use, a heat sink (not shown) is bonded to the heat dissipation layer 13. The heat dissipation layer 13 contains copper. As viewed in the first direction z, the heat dissipation layer 13 is located inward from the periphery 111A of the first mounting surface 111 of the first insulating layer 11. As viewed in the first direction z, the heat dissipation layer 13 overlaps the first shielding layer 14.

[0019] As shown in FIGS. 4 to 7 , the first shielding layer 14 is located between the first insulating layer 11 and the second insulating layer 12 in the first direction z. The first shielding layer 14 is bonded to the first mounting surface 111 of the first insulating layer 11. The first shielding layer 14 is a conductor. The first shielding layer 14 contains copper. As viewed in the first direction z, the first shielding layer 14 is located inward from the periphery 111A of the first mounting surface 111 of the first insulating layer 11. The dimension of the first shielding layer 14 in the first direction z is smaller than the dimensions of each of the first conductive layer 21 and the second conductive layer 22 in the first direction z.

[0020] As shown in FIGS. 4 to 6 , the first conductive layer 21 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the first conductive layer 21 is located on the opposite side of the heat dissipation layer 13 from the first insulating layer 11 in the first direction z. The first conductive layer 21 carries a plurality of first semiconductor elements 31. As shown in FIG. 2 , the first conductive layer 21 extends in the third direction y. The first conductive layer 21 contains copper. The first conductive layer 21 is covered with a sealing resin 60. When viewed in the first direction z, the first conductive layer 21 overlaps the first shielding layer 14.

[0021] As shown in Figures 4 and 5, the second conductive layer 22 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the second conductive layer 22 is located on the opposite side of the heat dissipation layer 13 in the first direction z with the first insulating layer 11 as the reference. As shown in Figure 2, the second conductive layer 22 is located on one side of the first conductive layer 21 in the second direction x. The second conductive layer 22 extends in the third direction y. The second conductive layer 22 contains copper. The second conductive layer 22 is covered with a sealing resin 60. When viewed in the first direction z, the second conductive layer 22 overlaps the first shielding layer 14.

[0022] As shown in FIGS. 4 , 5 , and 7 , the third conductive layer 23 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the third conductive layer 23 is located on the opposite side of the heat dissipation layer 13 relative to the first insulating layer 11 in the first direction z. Furthermore, the third conductive layer 23 is located on the opposite side of the first shielding layer 14 relative to the second insulating layer 12. The third conductive layer 23 carries a plurality of second semiconductor elements 32. As shown in FIG. 2 , the third conductive layer 23 is located between the first conductive layer 21 and the second conductive layer 22 in the second direction x. The third conductive layer 23 extends in the third direction y. The third conductive layer 23 contains copper. The third conductive layer 23 is covered with a sealing resin 60. When viewed in the first direction z, the third conductive layer 23 overlaps the first shielding layer 14.

[0023] As shown in FIGS. 4 and 5 , the first signal wiring 24 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the first signal wiring 24 is located on the opposite side of the heat dissipation layer 13 from the first insulating layer 11 in the first direction z. As shown in FIG. 2 , the first signal wiring 24 is located on the opposite side of the third conductive layer 23 from the first conductive layer 21 in the second direction x. The first signal wiring 24 extends in the third direction y. The first signal wiring 24 contains copper. The first signal wiring 24 is covered with a sealing resin 60. When viewed in the first direction z, the first signal wiring 24 overlaps the first shielding layer 14.

[0024] As shown in Figures 4 and 5, the second signal wiring 25 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the second signal wiring 25 is located on the opposite side of the heat dissipation layer 13 from the first insulating layer 11 in the first direction z. As shown in Figure 2, the second signal wiring 25 is located between the first conductive layer 21 and the first signal wiring 24 in the second direction x. The second signal wiring 25 extends in the third direction y. The second signal wiring 25 contains copper. The second signal wiring 25 is covered with a sealing resin 60. When viewed in the first direction z, the second signal wiring 25 overlaps the first shielding layer 14.

[0025] As shown in FIGS. 4 and 5 , the third signal wiring 26 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the third signal wiring 26 is located on the opposite side of the heat dissipation layer 13 from the first insulating layer 11 in the first direction z. As shown in FIG. 2 , the third signal wiring 26 is located on the opposite side of the third conductive layer 23 from the second conductive layer 22 in the second direction x. The third signal wiring 26 extends in the third direction y. The third signal wiring 26 contains copper. The third signal wiring 26 is covered with a sealing resin 60. When viewed in the first direction z, the third signal wiring 26 overlaps the first shielding layer 14.

[0026] As shown in FIGS. 4 and 5 , the fourth signal wiring 27 is bonded to the second mounting surface 121 of the second insulating layer 12. Therefore, the fourth signal wiring 27 is located on the opposite side of the heat dissipation layer 13 from the first insulating layer 11 in the first direction z. As shown in FIG. 2 , the fourth signal wiring 27 is located between the second conductive layer 22 and the third signal wiring 26 in the second direction x. The fourth signal wiring 27 extends in the third direction y. The fourth signal wiring 27 contains copper. The fourth signal wiring 27 is covered with a sealing resin 60. When viewed in the first direction z, the fourth signal wiring 27 overlaps the first shielding layer 14.

[0027] As shown in Fig. 7 , the multiple first intermediate wires 16 are located between the first shielding layer 14 and the first conductive layer 21 in the first direction z, and are embedded in the second insulating layer 12. Each of the multiple first intermediate wires 16 is electrically connected to the first shielding layer 14 and the first conductive layer 21. As a result, the first conductive layer 21 is electrically connected to the first shielding layer 14. As shown in Fig. 2 , the multiple first intermediate wires 16 are arranged along the third direction y. The composition of the multiple first intermediate wires 16 includes copper.

[0028] As shown in FIGS. 4 to 6 , the multiple first semiconductor elements 31 are bonded to the first conductive layer 21 while facing the first conductive layer 21 in the first direction z. Each of the multiple first semiconductor elements 31 is the same element. The multiple first semiconductor elements 31 are, for example, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). Alternatively, the multiple first semiconductor elements 31 may be field-effect transistors including MISFETs (Metal-Insulator-Semiconductor Field-Effect Transistors) or bipolar transistors such as IGBTs (Insulated Gate Bipolar Transistors). In the description of the semiconductor device A10, the multiple first semiconductor elements 31 are n-channel MOSFETs with a vertical structure. The multiple first semiconductor elements 31 include a compound semiconductor substrate. The compound semiconductor substrate contains silicon carbide (SiC). The multiple first semiconductor elements 31 are arranged along the third direction y.

[0029] As shown in FIG. 8 , each of the plurality of first semiconductor elements 31 has a first electrode 311 , a second electrode 312 and a first gate electrode 313 .

[0030] As shown in FIG. 8 , the first electrode 311 faces the first conductive layer 21. A current corresponding to the power before being converted by the first semiconductor element 31 flows through the first electrode 311. In other words, the first electrode 311 corresponds to the drain of the first semiconductor element 31. The first electrode 311 is conductively bonded to the first conductive layer 21 via a conductive bonding layer 39. As a result, the first electrode 311 of each of the multiple first semiconductor elements 31 is electrically connected to the first conductive layer 21. The conductive bonding layer 39 is, for example, solder. Alternatively, the conductive bonding layer 39 may be a sintered body of metal particles. In this case, the metal particles include, for example, silver (Ag).

[0031] 8 , the second electrode 312 is located on the opposite side to the first electrode 311 in the first direction z. A current corresponding to the power converted by the first semiconductor element 31 flows through the second electrode 312. In other words, the second electrode 312 corresponds to the source of the first semiconductor element 31. The second electrode 312 is located on the opposite side to the first shielding layer 14 with respect to the second insulating layer 12 in the first direction z.

[0032] 8, the first gate electrode 313 is located on the same side as the second electrode 312 in the first direction z. A gate voltage for driving the first semiconductor element 31 is applied to the first gate electrode 313. As shown in FIG. 2, the area of ​​the first gate electrode 313 is smaller than the area of ​​the second electrode 312 when viewed in the first direction z.

[0033] 4, 5, and 7, the second semiconductor elements 32 are bonded to the third conductive layer 23 while facing the third conductive layer 23 in the first direction z. Each of the second semiconductor elements 32 is the same element as each of the first semiconductor elements 31. Therefore, the second semiconductor elements 32 are n-channel MOSFETs with a vertical structure. The second semiconductor elements 32 are arranged along the third direction y.

[0034] As shown in FIG. 9 , each of the plurality of second semiconductor elements 32 has a third electrode 321 , a fourth electrode 322 and a second gate electrode 323 .

[0035] 9 , the third electrode 321 faces the third conductive layer 23. A current corresponding to the power before being converted by the second semiconductor element 32 flows through the third electrode 321. That is, the third electrode 321 corresponds to the drain of the second semiconductor element 32. The polarity of the third electrode 321 is different from the polarity of the second electrode 312 of the first semiconductor element 31. The third electrode 321 is located on the opposite side of the first shielding layer 14 with respect to the second insulating layer 12 in the first direction z. The third electrode 321 is conductively bonded to the third conductive layer 23 via a conductive bonding layer 39. As a result, the third electrode 321 of each of the multiple second semiconductor elements 32 is electrically connected to the third conductive layer 23.

[0036] 9 , the fourth electrode 322 is located on the opposite side to the third electrode 321 in the first direction z. A current corresponding to the power converted by the second semiconductor element 32 flows through the fourth electrode 322. In other words, the fourth electrode 322 corresponds to the source of the second semiconductor element 32.

[0037] 9 , the second gate electrode 323 is located on the same side as the fourth electrode 322 in the first direction z. A gate voltage for driving the second semiconductor element 32 is applied to the second gate electrode 323. As shown in FIG. 2 , the area of ​​the second gate electrode 323 is smaller than the area of ​​the fourth electrode 322 when viewed in the first direction z.

[0038] As shown in FIGS. 2 and 4 , each of the multiple first conductive members 48 is conductively bonded to the second electrode 312 of one of the multiple first semiconductor elements 31 and the third conductive layer 23. As a result, the second electrode 312 of each of the multiple first semiconductor elements 31 is electrically connected to the third conductive layer 23. Additionally, the third electrode 321 of each of the multiple second semiconductor elements 32 is electrically connected to the second electrode 312 of each of the multiple first semiconductor elements 31. When viewed in the first direction z, the multiple first conductive members 48 overlap the first shielding layer 14. The multiple first conductive members 48 are covered with a sealing resin 60. In the semiconductor device A10, each of the multiple first conductive members 48 is a wire. In this case, the composition of the multiple first conductive members 48 includes either aluminum (Al) or copper. Alternatively, each of the multiple first conductive members 48 may be a metal clip.

[0039] As shown in FIGS. 2 and 4 , each of the multiple second conductive members 49 is conductively bonded to the fourth electrode 322 of one of the multiple second semiconductor elements 32 and the second conductive layer 22. As a result, the fourth electrode 322 of each of the multiple second semiconductor elements 32 is electrically connected to the second conductive layer 22. When viewed in the first direction z, the multiple second conductive members 49 overlap the first shielding layer 14. The multiple second conductive members 49 are covered with a sealing resin 60. In the semiconductor device A10, each of the multiple second conductive members 49 is a wire. In this case, the composition of the multiple second conductive members 49 includes, for example, either aluminum or copper. Alternatively, each of the multiple second conductive members 49 may be a metal clip.

[0040] As shown in FIGS. 2 and 6 , the first power terminal 41 is conductively bonded to the first conductive layer 21. This electrically connects the first power terminal 41 to the first conductive layer 21 and the first electrodes 311 of the first semiconductor elements 31. A portion of the first power terminal 41 protrudes from the third side surface 65 of the sealing resin 60 to the outside. The first power terminal 41 is a P terminal (positive electrode) to which DC power, which is the target of power conversion, is applied. The first power terminal 41 contains copper. The first power terminal 41 is provided with a first mounting hole 411. The first mounting hole 411 is exposed to the outside from the sealing resin 60. The first mounting hole 411 penetrates the first power terminal 41 in the first direction z.

[0041] As shown in FIG. 2 , the second power terminal 42 is conductively bonded to the second conductive layer 22. As a result, the second power terminal 42 is electrically connected to the second conductive layer 22 and the fourth electrodes 322 of each of the multiple second semiconductor elements 32. A portion of the second power terminal 42 protrudes to the outside from the third side surface 65 of the sealing resin 60. The second power terminal 42 is an N terminal (negative electrode) to which DC power to be converted is applied. The second power terminal 42 contains copper. A second mounting hole 421 is provided in the second power terminal 42. The second mounting hole 421 is exposed to the outside from the sealing resin 60. The second mounting hole 421 penetrates the second power terminal 42 in the first direction z.

[0042] As shown in FIGS. 2 and 7 , the third power terminal 43 is conductively bonded to the third conductive layer 23. This electrically connects the third power terminal 43 to the third conductive layer 23, the second electrodes 312 of the first semiconductor elements 31, and the third electrodes 321 of the second semiconductor elements 32. A portion of the third power terminal 43 protrudes from the fourth side surface 66 of the sealing resin 60. The AC power converted by the first semiconductor elements 31 and the second semiconductor elements 32 is output from the third power terminal 43. The third power terminal 43 contains copper. The third power terminal 43 has a third mounting hole 431. The third mounting hole 431 is exposed to the outside from the sealing resin 60. The third mounting hole 431 penetrates the third power terminal 43 in the first direction z.

[0043] 2 and 5 , the first signal terminal 44 is located on the opposite side of the second signal wiring 25 from the first signal wiring 24 in the second direction x. The first signal terminal 44 is electrically connected to the first gate electrode 313 of each of the multiple first semiconductor elements 31. A gate voltage for driving the multiple first semiconductor elements 31 is applied to the first signal terminal 44. The first signal terminal 44 is a metal lead containing copper. The first signal terminal 44 includes a portion that protrudes to the outside from the first side surface 63 of the sealing resin 60. This portion includes a portion extending in the first direction z and a portion extending in the second direction x.

[0044] As shown in FIGS. 2 and 8 , each of the multiple first wires 51 is conductively bonded to the first gate electrode 313 of each of the multiple first semiconductor elements 31 and the first signal wiring 24. As shown in FIGS. 2 and 5 , the third wire 53 is conductively bonded to the first signal terminal 44 and the first signal wiring 24. As a result, the first signal terminal 44 is electrically connected to the first gate electrode 313 of each of the multiple first semiconductor elements 31. The multiple first wires 51 and the third wires 53 are covered with a sealing resin 60. The composition of each of the multiple first wires 51 and the third wires 53 includes gold (Au). Alternatively, the composition of each of the multiple first wires 51 and the third wires 53 may include either aluminum or copper.

[0045] 2 and 4 , the second signal terminal 45 is located on the opposite side of the first signal wiring 24 in the second direction x. The second signal terminal 45 is located next to the first signal terminal 44 in the third direction y. The second signal terminal 45 is electrically connected to the second electrodes 312 of the multiple first semiconductor elements 31. A voltage having the same potential as the voltage applied to the second electrodes 312 of the multiple first semiconductor elements 31 is applied to the second signal terminal 45. The second signal terminal 45 is a metal lead containing copper. The second signal terminal 45 includes a portion protruding from the first side surface 63 of the sealing resin 60 to the outside. This portion includes a portion extending in the first direction z and a portion extending in the second direction x.

[0046] As shown in FIG. 2 , each of the multiple second wires 52 is conductively bonded to the second electrode 312 of each of the multiple first semiconductor elements 31 and the second signal wiring 25. As shown in FIGS. 2 and 4 , the fourth wire 54 is conductively bonded to the second signal terminal 45 and the second signal wiring 25. As a result, the second signal terminal 45 is electrically connected to the second electrode 312 of each of the multiple first semiconductor elements 31. The multiple second wires 52 and the fourth wire 54 are covered with a sealing resin 60. The composition of each of the multiple second wires 52 and the fourth wire 54 includes gold. Alternatively, the composition of each of the multiple second wires 52 and the fourth wire 54 may include either aluminum or copper.

[0047] 2 and 5 , the third signal terminal 46 is located on the opposite side of the fourth signal wiring 27 with respect to the third signal wiring 26 in the second direction x. The third signal terminal 46 is electrically connected to the second gate electrodes 323 of each of the plurality of second semiconductor elements 32. A gate voltage for driving the plurality of second semiconductor elements 32 is applied to the third signal terminal 46. The third signal terminal 46 is a metal lead containing copper. The third signal terminal 46 includes a portion that protrudes to the outside from the second side surface 64 of the sealing resin 60. This portion includes a portion extending in the first direction z and a portion extending in the second direction x.

[0048] As shown in FIGS. 2 and 9 , each of the plurality of fifth wires 55 is conductively bonded to the second gate electrode 323 of each of the plurality of second semiconductor elements 32 and the third signal wiring 26. As shown in FIGS. 2 and 5 , the seventh wire 57 is conductively bonded to the third signal terminal 46 and the third signal wiring 26. As a result, the third signal terminal 46 is electrically connected to the second gate electrode 323 of each of the plurality of second semiconductor elements 32. The plurality of fifth wires 55 and the seventh wire 57 are covered with a sealing resin 60. The composition of each of the plurality of fifth wires 55 and the seventh wire 57 includes gold. Alternatively, the composition of each of the plurality of fifth wires 55 and the seventh wire 57 may include either aluminum or copper.

[0049] As shown in FIGS. 2 and 4 , the fourth signal terminal 47 is located on the opposite side of the third signal wiring 26 in the second direction x from the fourth signal wiring 27. The fourth signal terminal 47 is located adjacent to the third signal terminal 46 in the third direction y. The fourth signal terminal 47 is electrically connected to the fourth electrodes 322 of each of the multiple second semiconductor elements 32. A voltage having the same potential as the voltage applied to the fourth electrodes 322 of each of the multiple second semiconductor elements 32 is applied to the fourth signal terminal 47. The fourth signal terminal 47 is a metal lead containing copper. The fourth signal terminal 47 includes a portion protruding from the second side surface 64 of the sealing resin 60 to the outside. This portion includes a portion extending in the first direction z and a portion extending in the second direction x.

[0050] As shown in FIG. 2 , each of the sixth wires 56 is conductively bonded to the fourth electrode 322 of each of the second semiconductor elements 32 and the fourth signal wiring 27. As shown in FIGS. 2 and 4 , the eighth wire 58 is conductively bonded to the fourth signal terminal 47 and the fourth signal wiring 27. As a result, the fourth signal terminal 47 is electrically connected to the fourth electrode 322 of each of the second semiconductor elements 32. The sixth wires 56 and the eighth wires 58 are covered with a sealing resin 60. The sixth wires 56 and the eighth wires 58 each contain gold. Alternatively, the sixth wires 56 and the eighth wires 58 may each contain either aluminum or copper.

[0051] Next, the effects of the semiconductor device A10 will be described.

[0052] The semiconductor device A10 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. With this configuration, in the semiconductor device A10, a first parasitic capacitance C1 is formed, in which a conduction path between the second electrode 312 and the third electrode 321, the first shielding layer 14, and the second insulating layer 12 serve as a conductor layer and a first parasitic capacitance C1 is formed in which the first shielding layer 14 and the first conductive layer 21 serve as a dielectric layer. In this case, the potential applied to the first shielding layer 14 is equivalent to the potential applied to the first conductive layer 21. Therefore, in the semiconductor device A10, leakage current from the first shielding layer 14 to the outside via the first insulating layer 11 is suppressed. Therefore, with this configuration, it is possible to reduce noise caused by leakage current to the outside in the semiconductor device A10.

[0053] The semiconductor device A10 further includes a third conductive layer 23 located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The third conductive layer 23 is electrically connected to the second electrode 312 of the first semiconductor element 31 and the third electrode 321 of the second semiconductor element 32. When viewed in the first direction z, the third conductive layer 23 overlaps the first shielding layer 14. With this configuration, the third conductive layer 23 corresponds to one conductor layer of the first parasitic capacitance C1 described above. This more appropriately ensures the capacitance of the first parasitic capacitance C1, thereby effectively reducing noise caused by leakage current to the outside.

[0054] The semiconductor device A10 further includes a heat dissipation layer 13 located on the opposite side of the first insulating layer 11 from the first shielding layer 14. The first conductive layer 21 and the second conductive layer 22 are located on the opposite side of the first insulating layer 11 from the heat dissipation layer 13. This configuration makes it easy to bond a heat sink to the heat dissipation layer 13 using solder or the like. In this case, the semiconductor device A10 has an additional parasitic capacitance in which the heat dissipation layer 13 and the first shielding layer 14 serve as conductor layers and the first insulating layer 11 serves as a dielectric layer. However, because the first shielding layer 14 experiences almost no voltage change over time, the charge stored in the additional parasitic capacitance is essentially zero. Therefore, the heat dissipation performance of the semiconductor device A10 can be improved while suppressing leakage current from the first shielding layer 14 to the outside via the first insulating layer 11.

[0055] The semiconductor device A10 further includes a first signal wiring 24 that is electrically connected to the first gate electrode 313 of the first semiconductor element 31. The first signal wiring 24 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. When viewed in the first direction z, the first signal wiring 24 overlaps the first shielding layer 14. This configuration makes it possible to suppress external leakage current caused by voltage changes in the first signal wiring 24 over time.

[0056] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 10 to 12. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 10 shows a perspective view of the sealing resin 60. In Figure 10, the outline of the sealing resin 60 is shown by imaginary lines.

[0057] In semiconductor device A20, the arrangement of the first conductive layer 21, the second conductive layer 22, the plurality of first semiconductor elements 31, and the plurality of second semiconductor elements 32, and the configuration of the plurality of first conductive members 48 and the plurality of second conductive members 49 are different from those in semiconductor device A10.

[0058] 10 and 11 , the arrangement of the first conductive layers 21 and the second conductive layers 22 is reversed from that in the semiconductor device A10. In addition, the arrangement of the plurality of first semiconductor elements 31 and the plurality of second semiconductor elements 32 is reversed from that in the semiconductor device A10.

[0059] In each of the multiple first semiconductor elements 31, the arrangement of the first electrode 311 and the second electrode 312 is reversed from that in the semiconductor device A10. The first electrode 311 is electrically connected to the first conductive layer 21 via one of the multiple first conductive members 48. The second electrode 312 of each of the multiple first semiconductor elements 31 is electrically connected to the third conductive layer 23 via a conductive bonding layer 39. In each of the multiple first semiconductor elements 31, the first electrode 311 corresponds to the source, and the second electrode 312 corresponds to the drain.

[0060] In each of the multiple second semiconductor elements 32, the arrangement of the third electrode 321 and the fourth electrode 322 is reversed from that in the semiconductor device A10. The third electrode 321 is electrically connected to the third conductive layer 23 via one of the multiple second conductive members 49. As a result, the third electrode 321 is electrically connected to the second electrode 312 of each of the multiple first semiconductor elements 31. The fourth electrode 322 of each of the multiple second semiconductor elements 32 is electrically connected to the second conductive layer 22 via the conductive bonding layer 39. In each of the multiple second semiconductor elements 32, the third electrode 321 corresponds to the source, and the fourth electrode 322 corresponds to the drain.

[0061] Therefore, in the semiconductor device A20, the first power terminal 41 is an N-terminal (negative electrode) to which DC power to be converted is applied, and the second power terminal 42 is a P-terminal (positive electrode) to which DC power to be converted is applied. In the semiconductor device A20 as well, the third conductive layer 23 is electrically connected to the second electrode 312 of each of the plurality of first semiconductor elements 31 and the third electrode 321 of each of the plurality of second semiconductor elements 32.

[0062] Next, the effects of the semiconductor device A20 will be described.

[0063] The semiconductor device A20 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A20 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A20 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0064] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 13 to 15. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 13 shows a perspective view of the sealing resin 60. In Figure 13, the outline of the sealing resin 60 is shown by imaginary lines.

[0065] In the semiconductor device A30, the configurations of the first shielding layer 14 and the first intermediate wiring 16 are different from those of the semiconductor device A10.

[0066] As shown in FIGS. 14 and 15 , the first shielding layer 14 includes a first layer 14A and a second layer 14B spaced apart from each other in the first direction z. Each of the first layer 14A and the second layer 14B is a conductor. As shown in FIG. 13 , the area of ​​the second layer 14B is smaller than the area of ​​the first layer 14A when viewed in the first direction z. The first layer 14A is bonded to the first mounting surface 111 of the first insulating layer 11. The second layer 14B is located on the opposite side of the second insulating layer 12 from the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, and the first signal wiring 24 to the fourth signal wiring 27. The second layer 14B is conductively bonded to the first layer 14A via a conductive bonding layer 39.

[0067] 13 and 14 , the first intermediate wiring 16 is conductively bonded to the first conductive layer 21 and the first layer 14A. As a result, the first conductive layer 21 is electrically connected to the first layer 14A. The first intermediate wiring 16 is a wire. Alternatively, the first intermediate wiring 16 may be a metal clip.

[0068] As shown in Figures 14 and 15, when viewed in the first direction z, the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, and the first signal wiring 24 to the fourth signal wiring 27 each overlap the first layer 14A and the second layer 14B.

[0069] Next, the effects of the semiconductor device A30 will be described.

[0070] The semiconductor device A30 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A30 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A30 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0071] In the semiconductor device A30, the first shielding layer 14 includes a first layer 14A and a second layer 14B, each of which is conductive and spaced apart in the first direction z. The first conductive layer 21 is electrically connected to the first layer 14A. The second layer 14B is conductively bonded to the first layer 14A. This configuration allows one element including the first insulating layer 11, the heat dissipation layer 13, and the first layer 14A, and the other element including the second insulating layer 12, the second layer 14B, the first conductive layer 21, the second conductive layer 22, and the third conductive layer 23, to be easily obtained from a laminated substrate. For example, a laminated substrate formed by active metal brazing (AMB) can be used as the laminated substrate. This improves the manufacturing efficiency of the semiconductor device A30.

[0072] As viewed in the first direction z, the third conductive layer 23 overlaps the first layer 14A and the second layer 14B. This configuration more appropriately ensures the capacitance of the first parasitic capacitance C1 described above, thereby effectively reducing noise caused by leakage current to the outside.

[0073] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 16 to 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 16 shows a perspective view of the sealing resin 60. In Figure 16, the outline of the sealing resin 60 is shown by imaginary lines.

[0074] In the semiconductor device A40, the configurations of the first shielding layer 14, the second conductive layer 22, the third signal wiring 26 and the fourth signal wiring 27 are different from those of the semiconductor device A30 described above.

[0075] 16, the area of ​​each of the first layer 14A and the second layer 14B of the first shielding layer 14 is smaller than the corresponding area in the semiconductor device A30 when viewed in the first direction z. Accordingly, the area of ​​the second insulating layer 12 is reduced compared to that in the semiconductor device A30 when viewed in the first direction z.

[0076] 17 and 18 , the second conductive layer 22, the third signal wiring 26, and the fourth signal wiring 27 are bonded to the first mounting surface 111 of the first insulating layer 11. Therefore, in the first direction z, the first shielding layer 14 is not present between the first insulating layer 11 and the second conductive layer 22, the third signal wiring 26, and the fourth signal wiring 27.

[0077] Next, the effects of the semiconductor device A40 will be described.

[0078] The semiconductor device A40 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A40 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A40 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0079] In the semiconductor device A40, the second conductive layer 22 is bonded to the first insulating layer 11. This configuration allows the dimensions of the second insulating layer 12, the first layer 14A, and the second layer 14B to be reduced, thereby reducing the manufacturing cost of the semiconductor device A40.

[0080] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Figures 19 to 21. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 19 shows a perspective view of the sealing resin 60. In Figure 19, the outline of the sealing resin 60 is shown by imaginary lines.

[0081] The semiconductor device A50 differs from the semiconductor device A10 in the configuration of the first shielding layer 14, the first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27, and in the absence of multiple first intermediate wirings 16.

[0082] 20 , the first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27 are located on the opposite side of the first shielding layer 14 from the second insulating layer 12. The first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27 are bonded to the first mounting surface 111 of the first insulating layer 11. As shown in FIGS. 20 and 21 , the first shielding layer 14 is conductively bonded to the first conductive layer 21 via a conductive bonding layer 39.

[0083] 19 to 21, the area of ​​the first conductive layer 21 is larger than the area of ​​the semiconductor device A10 when viewed in the first direction z. As a result, the third conductive layer 23 overlaps the first conductive layer 21 when viewed in the first direction z.

[0084] Next, the effects of the semiconductor device A50 will be described.

[0085] The semiconductor device A50 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A50 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A50 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0086] In the semiconductor device A50, the first conductive layer 21 and the second conductive layer 22 are located on the opposite side of the first shielding layer 14 from the second insulating layer 12. The first conductive layer 21 and the second conductive layer 22 are bonded to the first insulating layer 11. The first shielding layer 14 is conductively bonded to the first conductive layer 21. This configuration allows one element including the first insulating layer 11, the heat dissipation layer 13, the first conductive layer 21, and the second conductive layer 22, and the other element including the second insulating layer 12, the first shielding layer 14, and the third conductive layer 23, to be easily obtained from a laminated substrate, as in the semiconductor device A30 described above. This improves the manufacturing efficiency of the semiconductor device A50. In this case, the dimensions of the second insulating layer 12 and the first shielding layer 14 can be reduced, thereby reducing the manufacturing cost of the semiconductor device A50.

[0087] In the semiconductor device A50, when viewed in the first direction z, the third conductive layer 23 overlaps the first conductive layer 21. By adopting this configuration, it is possible to reduce the parasitic inductance in the semiconductor device A50.

[0088] Sixth Embodiment: A semiconductor device A60 according to a sixth embodiment of the present disclosure will be described with reference to Figures 22 to 25. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 22 shows a perspective view of the sealing resin 60. In Figure 22, the outline of the sealing resin 60 is shown by imaginary lines.

[0089] The semiconductor device A60 differs from the semiconductor device A10 in that it further includes a second shielding layer 15 and a plurality of second intermediate wirings 17.

[0090] As shown in Figures 23 and 25 , the second shielding layer 15 is located between the first insulating layer 11 and the second insulating layer 12 in the first direction z. As shown in Figures 22 and 23 , the second shielding layer 15 is spaced apart from the first shielding layer 14 in the second direction x. The second shielding layer 15 is bonded to the first mounting surface 111 of the first insulating layer 11. The second shielding layer 15 is a conductor. The second shielding layer 15 contains copper. As viewed in the first direction z, the second shielding layer 15 is located inward from the periphery 111A of the first mounting surface 111 of the first insulating layer 11. The dimension of the second shielding layer 15 in the first direction z is smaller than the dimensions of each of the first conductive layer 21 and the second conductive layer 22 in the first direction z.

[0091] As shown in FIG. 23, the first conductive layer 21, the second conductive layer 22, the third conductive layer 23, and the first signal wiring 24 to the fourth signal wiring 27 are located on the opposite side of the first insulating layer 11 with respect to the first shielding layer 14 and the second shielding layer 15.

[0092] 22 and 23 , when viewed in the first direction z, the third conductive layer 23 and the heat dissipation layer 13 overlap the first shielding layer 14 and the second shielding layer 15, respectively. When viewed in the first direction z, the second conductive layer 22, the third signal wiring 26, and the fourth signal wiring 27 overlap the second shielding layer 15.

[0093] 25 , the multiple second intermediate wires 17 are located between the second shielding layer 15 and the second conductive layer 22 in the first direction z, and are embedded in the second insulating layer 12. Each of the multiple second intermediate wires 17 is electrically connected to the second shielding layer 15 and the second conductive layer 22. As a result, the second conductive layer 22 is electrically connected to the second shielding layer 15. As shown in FIG. 22 , the multiple second intermediate wires 17 are arranged along the third direction y. The composition of the multiple first intermediate wires 16 includes copper.

[0094] Next, the effects of the semiconductor device A60 will be described.

[0095] The semiconductor device A60 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A60 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A60 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0096] The semiconductor device A60 further includes a second shielding layer 15. The second shielding layer 15 is a conductor. The second conductive layer 22 is electrically connected to the second shielding layer 15. This configuration forms a second parasitic capacitance C2 in the semiconductor device A60, with the second electrode 312 and the third electrode 321 connected via the second shielding layer 15 as a conductor layer and the second insulating layer 12 as a dielectric layer. In this case, the potential applied to the second shielding layer 15 is equal to the potential applied to the second conductive layer 22. This effectively suppresses leakage current from the first shielding layer 14 and the second shielding layer 15 to the outside via the first insulating layer 11, even when the voltage change over time in the conductive path between the second electrode 312 and the third electrode 321 is large. This effectively reduces noise caused by leakage current to the outside.

[0097] Seventh Embodiment: A semiconductor device A70 according to a seventh embodiment of the present disclosure will be described with reference to Figures 26 to 29. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. For ease of understanding, Figure 26 shows a perspective view of the sealing resin 60. In Figure 26, the outline of the sealing resin 60 is shown by imaginary lines.

[0098] In the semiconductor device A70, the configurations of the first shielding layer 14 and the second shielding layer 15 are different from those of the semiconductor device A60 described above.

[0099] 26 , 27 , and 29 , the first shielding layer 14 has a first base portion 141 and a first convex portion 142. When viewed in the first direction z, the first base portion 141 overlaps the first conductive layer 21, the third conductive layer 23, the first signal wiring 24, and the second signal wiring 25. The first convex portion 142 protrudes from the first base portion 141 in the second direction x. When viewed in the first direction z, the first convex portion 142 overlaps the third conductive layer 23.

[0100] 26 , 27 , and 29 , the second shielding layer 15 has a second base portion 151 and a second convex portion 152. When viewed in the first direction z, the second base portion 151 overlaps the second conductive layer 22, the third conductive layer 23, the third signal wiring 26, and the fourth signal wiring 27. The second convex portion 152 protrudes from the second base portion 151 in the second direction x. The second convex portion 152 is spaced apart from the first convex portion 142 of the first shielding layer 14 in the first direction z. A portion of the second insulating layer 12 is sandwiched between the first convex portion 142 and the second convex portion 152. When viewed in the first direction z, the second convex portion 152 overlaps the first convex portion 142 of the first shielding layer 14 and the third conductive layer 23.

[0101] 28 and 29 , the first convex portion 142 of the first shielding layer 14 is located in the first direction z between the third conductive layer 23 and the second convex portion 152 of the second shielding layer 15. The distance in the first direction z between the first convex portion 142 and the second convex portion 152 is smaller than the distance in the first direction z between the first convex portion 142 and the third conductive layer 23.

[0102] Next, the effects of the semiconductor device A70 will be described.

[0103] The semiconductor device A70 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A70 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A70 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0104] In the semiconductor device A70, the first shielding layer 14 has a first base portion 141 and a first convex portion 142. The second shielding layer 15 has a second base portion 151 and a second convex portion 152. As viewed in the first direction z, the second convex portion 152 overlaps the first convex portion 142. As viewed in the first direction z, the third conductive layer 23 overlaps the first convex portion 142 and the second convex portion 152. By adopting this configuration, the capacitance of each of the first parasitic capacitance C1 and the second parasitic capacitance C2 is further increased in the semiconductor device A70. As a result, even if the voltage change over time in the conduction path between the second electrode 312 and the third electrode 321 is even larger, leakage current to the outside from each of the first shielding layer 14 and the second shielding layer 15 via the first insulating layer 11 is effectively suppressed.

[0105] Eighth Embodiment: A semiconductor device A80 according to an eighth embodiment of the present disclosure will be described with reference to Figures 30 to 32. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 30 shows a perspective view of the sealing resin 60. In Figure 30, the outline of the sealing resin 60 is shown by imaginary lines.

[0106] The semiconductor device A80 differs from the previously described semiconductor device A60 in the configuration of the first shielding layer 14, the second shielding layer 15, the first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27, and in the absence of multiple first intermediate wirings 16 and multiple second intermediate wirings 17.

[0107] 31 , the first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27 are located on the opposite side of the second insulating layer 12 with respect to the first shielding layer 14 and the second shielding layer 15. The first conductive layer 21, the second conductive layer 22, and the first signal wiring 24 to the fourth signal wiring 27 are bonded to the first mounting surface 111 of the first insulating layer 11. The first shielding layer 14 is conductively bonded to the first conductive layer 21 via a conductive bonding layer 39. The second shielding layer 15 is conductively bonded to the second conductive layer 22 via the conductive bonding layer 39.

[0108] 30 and 32 , the area of ​​each of the first conductive layer 21 and the second conductive layer 22 is larger than the corresponding area of ​​the semiconductor device A10 when viewed in the first direction z. As a result, the third conductive layer 23 overlaps the first conductive layer 21 and the second conductive layer 22 when viewed in the first direction z.

[0109] Next, the effects of the semiconductor device A80 will be described.

[0110] The semiconductor device A80 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A80 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A80 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0111] In the semiconductor device A80, the first conductive layer 21 and the second conductive layer 22 are located on the opposite side of the second insulating layer 12 with respect to the first shielding layer 14 and the second shielding layer 15. The first conductive layer 21 and the second conductive layer 22 are bonded to the first insulating layer 11. The first shielding layer 14 is conductively bonded to the first conductive layer 21. The second shielding layer 15 is conductively bonded to the second conductive layer 22. This configuration allows the semiconductor device A80 to achieve the same effects as the semiconductor device A60. Furthermore, one element including the first insulating layer 11, the heat dissipation layer 13, the first conductive layer 21, and the second conductive layer 22, and the other element including the second insulating layer 12, the first shielding layer 14, the second shielding layer 15, and the third conductive layer 23 can be easily obtained from a laminated substrate, as in the semiconductor device A30 described above. This improves the manufacturing efficiency of the semiconductor device A80. In this case, it is possible to reduce the dimensions of each of the second insulating layer 12, the first shielding layer 14, and the second shielding layer 15. This allows the manufacturing cost of the semiconductor device A80 to be reduced.

[0112] In the semiconductor device A80, as viewed in the first direction z, the third conductive layer 23 overlaps the first conductive layer 21 and the second conductive layer 22. By adopting this configuration, it is possible to reduce the parasitic inductance in the semiconductor device A80.

[0113] Ninth Embodiment: A semiconductor device A90 according to a ninth embodiment of the present disclosure will be described with reference to Figures 33 to 36. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 33 shows a perspective view of the sealing resin 60. In Figure 33, the outline of the sealing resin 60 is shown by imaginary lines.

[0114] In the semiconductor device A90, the configurations of the first shielding layer 14, the second shielding layer 15, the first conductive layer 21, the second conductive layer 22, and the plurality of second semiconductor elements 32 differ from those of the semiconductor device A80 described above. In the description of the semiconductor device A90, the "second direction x" and the "third direction y" used in the description of the semiconductor device A80 will be read as the "third direction y" and the "second direction x," respectively.

[0115] 33 , when viewed in the first direction z, the area of ​​each of the first shielding layer 14 and the second shielding layer 15 overlapping the third conductive layer 23 is larger than the corresponding area of ​​the semiconductor device A80. Accordingly, when viewed in the first direction z, the area of ​​each of the first conductive layer 21 and the second conductive layer 22 overlapping the third conductive layer 23 is also larger than the corresponding area of ​​the semiconductor device A80.

[0116] 33 and 36 , the multiple second semiconductor elements 32 include a first specified element 32A and a second specified element 32B that are adjacent to each other in the second direction x. As shown in Fig. 34 and 36 , when viewed in the first direction z, the entire first specified element 32A overlaps the first shielding layer 14. As shown in Fig. 35 and 36 , the entire second specified element 32B overlaps the second shielding layer 15.

[0117] Next, the effects of the semiconductor device A90 will be described.

[0118] The semiconductor device A90 includes a first insulating layer 11, a second insulating layer 12, a first shielding layer 14, a first semiconductor element 31, a second semiconductor element 32, a first conductive layer 21, and a second conductive layer 22. A first electrode 311 of the first semiconductor element 31 is electrically connected to the first conductive layer 21. A fourth electrode 322 of the second semiconductor element 32 is electrically connected to the second conductive layer 22. A third electrode 321 of the second semiconductor element 32 is electrically connected to the second electrode 312 of the first semiconductor element 31. At least one of the second electrode 312 and the third electrode 321 is located on the opposite side of the second insulating layer 12 from the first shielding layer 14. The first shielding layer 14 is a conductor. The first conductive layer 21 is electrically connected to the first shielding layer 14. Therefore, with this configuration, the semiconductor device A90 can also reduce noise caused by leakage current to the outside. Furthermore, the semiconductor device A90 has the same configuration as the semiconductor device A10, and thus exhibits the same effects as the semiconductor device A10.

[0119] The semiconductor device A90 further includes an additional second semiconductor element 32 (second specific element 32B) located adjacent to the second semiconductor element 32 (first specific element 32A) in the second direction x. The additional second semiconductor element 32 is conductively bonded to the third conductive layer 23. As viewed in the first direction z, the entire second semiconductor element 32 overlaps the first shielding layer 14. As viewed in the first direction z, the entire additional second semiconductor element 32 overlaps the second shielding layer 15. With this configuration, the capacitances of the first parasitic capacitance C1 and the second parasitic capacitance C2 in the semiconductor device A90 are further increased. As a result, even when a voltage change over time in the conductive path between the second electrode 312 and the third electrode 321 is relatively large, leakage current to the outside from each of the first shielding layer 14 and the second shielding layer 15 via the first insulating layer 11 is effectively suppressed.

[0120] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0121] The present disclosure includes embodiments described in the following appendices: Appendix 1 (Semiconductor device A10). a first insulating layer (11); a second insulating layer (12) located on one side of the first insulating layer (11) in a first direction; a first shielding layer (14) located between the first insulating layer (11) and the second insulating layer (12) in the first direction; a first semiconductor element (31) having a first electrode (311) and a second electrode (312); a second semiconductor element (32) having a third electrode (321) and a fourth electrode (322); a first conductive layer (21) conducting to the first electrode (311); and a second conductive layer (22) conducting to the fourth electrode (322), wherein the polarity of the second electrode (312) and the polarity of the third electrode (321) are different from each other, and the third electrode (321) is conducting to the second electrode (312), A semiconductor device, wherein at least one of the second electrode (312) and the third electrode (321) is located on the opposite side of the second insulating layer (12) from the first shielding layer (14), the first shielding layer (14) is a conductor, and the first conductive layer (21) is conductive to the first shielding layer (14). Supplementary Note 2 (Semiconductor Device A10). The semiconductor device according to Supplementary Note 1, further comprising a third conductive layer (23) located on the opposite side of the second insulating layer (12) from the first shielding layer (14), the third conductive layer (23) is conductive to the second electrode (312) and the third electrode (321), and the third conductive layer (23) overlaps the first shielding layer (14) when viewed in the first direction. Supplementary Note 3 (Semiconductor Device A10). The semiconductor device according to Supplementary Note 2, further comprising a heat dissipation layer (13), the heat dissipation layer (13) being located on the opposite side of the first insulating layer (11) to the first shielding layer (14), and the first conductive layer (21) and the second conductive layer (22) being located on the opposite side of the first insulating layer (11) to the heat dissipation layer (13).Supplementary Note 4 (Semiconductor device A10): The semiconductor device according to Supplementary Note 3, wherein the heat dissipation layer (13) overlaps the first shielding layer (14) when viewed in the first direction.Supplementary Note 5 (Semiconductor device A10): The semiconductor device according to Supplementary Note 4, wherein the first conductive layer (21) overlaps the first shielding layer (14) when viewed in the first direction.Supplementary Note 6 (Semiconductor device A10): The semiconductor device according to Supplementary Note 5, wherein the third conductive layer (23) is bonded to the second insulating layer (12), the first electrode (311) is located on the opposite side of the second electrode (312) in the first direction and is conductively bonded to the first conductive layer (21), and the third electrode (321) is located on the opposite side of the fourth electrode (322) in the first direction and is conductively bonded to the third conductive layer (23). Supplementary Note 7 (Semiconductor device A30): The semiconductor device according to Appendix 6, wherein the first shielding layer (14) includes a first layer (14A) and a second layer (14B) that are each a conductor and spaced apart from each other in the first direction, the first conductive layer (21) is electrically connected to the first layer (14A), the first layer (14A) is bonded to the first insulating layer (21), and the second layer (14B) is conductively bonded to the first layer (14A). Appendix 8 (Semiconductor device A30). The semiconductor device according to Appendix 7, wherein the third conductive layer (23) overlaps the first layer (14A) and the second layer (14B) when viewed in the first direction. Appendix 9 (Semiconductor device A30). The semiconductor device according to Supplementary Note 8, wherein the first conductive layer (21) is located on the opposite side of the second insulating layer (12) from the second layer (14B), and the first conductive layer (21) is bonded to the second insulating layer (12).Supplementary Note 10 (Semiconductor device A40).The semiconductor device according to Supplementary Note 9, wherein the second conductive layer (22) is bonded to the first insulating layer (11).Supplementary Note 11 (Semiconductor device A50). The semiconductor device according to appendix 6, wherein the first conductive layer (21) and the second conductive layer (22) are located on the opposite side of the first shielding layer (14) from the second insulating layer (12), the first conductive layer (21) and the second conductive layer (22) are bonded to the first insulating layer (11), the first shielding layer (14) is conductively bonded to the first conductive layer (21), and when viewed in the first direction, the third conductive layer (23) overlaps the first conductive layer (21).Supplementary Note 12 (Semiconductor device A60): The semiconductor device according to Supplementary Note 6, further comprising a second shielding layer (15) located between the first insulating layer (11) and the second insulating layer (12) in the first direction and spaced apart from the first shielding layer (14) in a second direction perpendicular to the first direction, wherein the second shielding layer (15) is a conductor, and the second conductive layer (22) is electrically connected to the second shielding layer (15). Supplementary Note 13 (Semiconductor device A60): The semiconductor device according to Supplementary Note 12, wherein the third conductive layer (23) and the heat dissipation layer (13) overlap the second shielding layer (15) when viewed in the first direction. Supplementary Note 14 (Semiconductor device A60): The semiconductor device according to Supplementary Note 13, wherein the second conductive layer (22) overlaps the second shielding layer (15) when viewed in the first direction. Supplementary Note 15 (Semiconductor device A60): The semiconductor device according to Appendix 14, wherein the first conductive layer (21) and the second conductive layer (22) are located on the opposite side of the first insulating layer (11) with respect to the first shielding layer (14) and the second shielding layer (15). Appendix 16 (Semiconductor device A70). The semiconductor device according to Appendix 15, wherein the first shielding layer (14) has a first base (141) overlapping the first conductive layer (21) when viewed in the first direction, and a first convex portion (142) protruding from the first base (141) in the second direction, the second shielding layer (15) has a second base (151) overlapping the second conductive layer (22) when viewed in the first direction, and a second convex portion (152) protruding from the second base (151) in the second direction, and the second convex portion (152) overlaps the first convex portion (142) when viewed in the first direction. Supplementary Note 17 (Semiconductor device A70) The semiconductor device according to Supplementary Note 16, wherein the third conductive layer (23) overlaps the first convex portion (142) and the second convex portion (152) when viewed in the first direction.Supplementary Note 18 (Semiconductor device A80): The semiconductor device according to Supplementary Note 14, wherein the first conductive layer (21) and the second conductive layer (22) are located on the opposite side of the second insulating layer (12) with respect to the first shielding layer (14) and the second shielding layer (15), the first conductive layer (21) and the second conductive layer (22) are bonded to the first insulating layer (11), the first shielding layer (14) is conductively bonded to the first conductive layer (21), the second shielding layer (15) is conductively bonded to the second conductive layer (22), and when viewed in the first direction, the third conductive layer (23) overlaps the first conductive layer (21) and the second conductive layer (22). Supplementary Note 19 (Semiconductor device A90): The semiconductor device according to Supplementary Note 18, further comprising an additional second semiconductor element (32B) located adjacent to the second semiconductor element (32A) in the second direction, the additional second semiconductor element (32B) being conductively bonded to the third conductive layer (23), the entire second semiconductor element (32A) overlapping the first shielding layer (14) as viewed in the first direction, and the entire additional second semiconductor element (32B) overlapping the second shielding layer (15) as viewed in the first direction.Supplementary Note 20 (Semiconductor device A10).The semiconductor device according to any one of Supplementary Notes 3 to 19, further comprising a sealing resin (60) covering the first semiconductor element (31) and the second semiconductor element (32), the heat dissipation layer (13) being exposed from the sealing resin (60).Supplementary Note 21 (Semiconductor device A10). The semiconductor device according to Appendix 6, wherein the dimension in the first direction of the first shielding layer (14) is smaller than the dimension in the first direction of each of the first conductive layer (21) and the second conductive layer (22). Appendix 22 (Semiconductor device A30). The semiconductor device according to Appendix 6, wherein the dimension in the first direction of the first insulating layer (11) is equal to or greater than the dimension in the first direction of the second insulating layer (12).Supplementary Note 23 (Semiconductor device A30): The semiconductor device according to Supplementary Note 9 or 10, further comprising a first signal wiring (24) located on the opposite side of the second layer (14B) with respect to the second insulating layer (12), the first semiconductor element (31) having a first gate electrode (313) located on the same side as the second electrode (312) in the first direction, and the first signal wiring (24) being electrically connected to the first gate electrode (313). Supplementary Note 24 (Semiconductor device A30): The semiconductor device according to Supplementary Note 23, wherein the first signal wiring (24) overlaps the first layer (14A) and the second layer (14B) when viewed in the first direction. Supplementary Note 25 (Semiconductor device A30): The semiconductor device according to Appendix 24, further comprising: a first signal terminal (44) electrically connected to the first signal wiring (24); and a sealing resin (60) covering the first semiconductor element (31) and the second semiconductor element (32), wherein the heat dissipation layer (13) and the first signal terminal (44) are exposed from the sealing resin (60). Appendix 26 (Semiconductor device A70). The semiconductor device according to Appendix 17, wherein the first convex portion (142) is located between the second convex portion (152) and the third conductive layer (23) in the first direction. Appendix 27 (Semiconductor device A70). The semiconductor device according to Appendix 26, wherein the distance in the first direction between the first convex portion (142) and the second convex portion (152) is smaller than the distance in the first direction between the first convex portion (142) and the third conductive layer (23). Appendix 28. The semiconductor device according to claim 20, further comprising a plurality of power terminals (41, 42, 43) individually connected to the first conductive layer (21), the second conductive layer (22), and the third conductive layer (23), and the plurality of power terminals (41, 42, 43) are exposed from the sealing resin (60).

[0122] A10 to A90: semiconductor device 11: first insulating layer 111: first mounting surface 111A: periphery 12: second insulating layer 121: second mounting surface 13: heat dissipation layer 14: first shielding layer 14A, 14B: first layer, second layer 141: first base portion 142: first convex portion 15: second shielding layer 151: second base portion 152: second convex portion 16: first intermediate wiring 17: second intermediate wiring 21, 22, 23: first conductive layer, second conductive layer, third conductive layer 24 to 27: first signal wiring to fourth signal wiring 31: first semiconductor element 311, 312: first electrode, second electrode 313: first gate electrode 32: second semiconductor element 32A, 32B: first specified element, second specified element 321, 322: Third electrode, fourth electrode 323: Second gate electrode 39: Conductive bonding layer 41: First power terminal 411: First mounting hole 42: Second power terminal 421: Second mounting hole 43: Third power terminal 431: Third mounting hole 44-47: First to fourth signal terminals 48, 49: First conductive member, second conductive member 51-58: First to eighth wires 60: Sealing resin 61: Top surface 62: Bottom surface 63-66: First to fourth side surfaces z, x, y: First direction, second direction, third direction

Claims

1. A semiconductor device comprising: a first insulating layer; a second insulating layer located on one side of the first insulating layer in a first direction; a first shielding layer located between the first insulating layer and the second insulating layer in the first direction; a first semiconductor element having a first electrode and a second electrode; a second semiconductor element having a third electrode and a fourth electrode; a first conductive layer conducting to the first electrode; and a second conductive layer conducting to the fourth electrode, wherein the polarity of the second electrode and the polarity of the third electrode are different from each other, the third electrode conducting to the second electrode, at least one of the second electrode and the third electrode is located on the opposite side of the second insulating layer to the first shielding layer, the first shielding layer is a conductor, and the first conductive layer conducting to the first shielding layer.

2. The semiconductor device according to claim 1, further comprising a third conductive layer located on the opposite side of the second insulating layer from the first shielding layer, the third conductive layer being conductive to the second electrode and the third electrode, and the third conductive layer overlapping the first shielding layer when viewed in the first direction.

3. The semiconductor device according to claim 2, further comprising a heat dissipation layer, the heat dissipation layer being located on the opposite side of the first insulating layer from the first shielding layer, and the first conductive layer and the second conductive layer being located on the opposite side of the first insulating layer from the heat dissipation layer.

4. The semiconductor device according to claim 3, wherein the heat dissipation layer overlaps the first shielding layer when viewed in the first direction.

5. The semiconductor device according to claim 4, wherein the first conductive layer overlaps the first shielding layer when viewed in the first direction.

6. The semiconductor device according to claim 5, wherein the third conductive layer is bonded to the second insulating layer, the first electrode is located on the opposite side of the second electrode in the first direction and is conductively bonded to the first conductive layer, and the third electrode is located on the opposite side of the fourth electrode in the first direction and is conductively bonded to the third conductive layer.

7. The semiconductor device according to claim 6, wherein the first shielding layer includes a first layer and a second layer, each of which is a conductor and spaced apart from each other in the first direction, the first conductive layer being electrically connected to the first layer, the first layer being bonded to the first insulating layer, and the second layer being electrically conductively bonded to the first layer.

8. The semiconductor device according to claim 7, wherein the third conductive layer overlaps the first layer and the second layer when viewed in the first direction.

9. The semiconductor device according to claim 8, wherein the first conductive layer is located on the opposite side of the second insulating layer from the second layer, and the first conductive layer is bonded to the second insulating layer.

10. The semiconductor device according to claim 9, wherein said second conductive layer is bonded to said first insulating layer.

11. The semiconductor device described in claim 6, wherein the first conductive layer and the second conductive layer are located on the opposite side of the first shielding layer from the second insulating layer, the first conductive layer and the second conductive layer are bonded to the first insulating layer, the first shielding layer is conductively bonded to the first conductive layer, and when viewed in the first direction, the third conductive layer overlaps the first conductive layer.

12. The semiconductor device according to claim 6, further comprising a second shielding layer located between the first insulating layer and the second insulating layer in the first direction and spaced apart from the first shielding layer in a second direction perpendicular to the first direction, the second shielding layer being a conductor, and the second conductive layer being electrically connected to the second shielding layer.

13. The semiconductor device according to claim 12, wherein the third conductive layer and the heat dissipation layer overlap the second shielding layer when viewed in the first direction.

14. The semiconductor device according to claim 13, wherein the second conductive layer overlaps the second shielding layer when viewed in the first direction.

15. The semiconductor device according to claim 14, wherein the first conductive layer and the second conductive layer are located on the opposite side of the first insulating layer with respect to the first shielding layer and the second shielding layer.

16. The semiconductor device described in claim 15, wherein the first shielding layer has a first base portion overlapping the first conductive layer when viewed in the first direction and a first convex portion protruding from the first base portion in the second direction; the second shielding layer has a second base portion overlapping the second conductive layer when viewed in the first direction and a second convex portion protruding from the second base portion in the second direction; and the second convex portion overlaps the first convex portion when viewed in the first direction.

17. The semiconductor device according to claim 16, wherein said third conductive layer overlaps said first convex portion and said second convex portion when viewed in said first direction.

18. The semiconductor device described in claim 14, wherein the first conductive layer and the second conductive layer are located on the opposite side of the second insulating layer with respect to the first shielding layer and the second shielding layer, the first conductive layer and the second conductive layer are bonded to the first insulating layer, the first shielding layer is conductively bonded to the first conductive layer, the second shielding layer is conductively bonded to the second conductive layer, and when viewed in the first direction, the third conductive layer overlaps the first conductive layer and the second conductive layer.

19. The semiconductor device described in claim 18, further comprising an additional second semiconductor element located adjacent to the second semiconductor element in the second direction, the additional second semiconductor element being conductively bonded to the third conductive layer, the second semiconductor element entirely overlapping the first shielding layer when viewed in the first direction, and the additional second semiconductor element entirely overlapping the second shielding layer when viewed in the first direction.

20. The semiconductor device according to any one of claims 3 to 19, further comprising a sealing resin covering the first semiconductor element and the second semiconductor element, wherein the heat dissipation layer is exposed from the sealing resin.

Images