Method for manufacturing light-emitting display device

Abstract

Provided is a method for manufacturing a light-emitting display device that is an electroluminescence (EL) device using quantum dot light-emitting diode technology or organic light-emitting diode technology, and with which it is possible to manufacture the light-emitting display device by a simple and more practical method.　This is a method for manufacturing a light-emitting display device using photolithography patterning, wherein a resist layer used for forming a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent. The method for manufacturing the light-emitting display device includes: (i) depositing a light-emitting-layer-forming material layer, and then laminating a resist layer on the light-emitting-layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting-layer-forming material layer using the resist pattern as a mask to form a pattern of a light-emitting layer; and (iv) peeling the resist pattern from the light-emitting layer after exposing the resist pattern laminated on the upper side of the light-emitting layer.

Description

Method for manufacturing a light-emitting display device

[0001] The present invention relates to a method for manufacturing a light-emitting display device, such as an inorganic EL device using quantum dot light-emitting diode (QLED) technology or an organic EL device using organic light-emitting diode (OLED) technology, by using photolithographic patterning.

[0002] For example, quantum dots have the unique properties of high luminescence, narrow emission spectrum, tunability to a single excitation wavelength, and stability against light, and therefore, much research has been conducted into their use in important applications such as biological imaging, energy conversion, and lighting (LED). Many inventions have also been made relating to quantum dots and electronic devices containing quantum dots in the light-emitting layer, and for example, a light-emitting display device using quantum dot light-emitting diode technology as an electronic device has been proposed (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2022-112507

[0004] However, Patent Document 1 does not provide a detailed explanation of the method for manufacturing quantum dot light-emitting diodes. Therefore, it is desired to provide a method for manufacturing a light-emitting display device, which is an EL device using quantum dot light-emitting diode technology, in a simpler and more practical manner.

[0005] The present invention has been made in consideration of the above circumstances, and aims to provide a method for manufacturing a light-emitting display device, which is an EL (Electroluminescence) device that uses quantum dot light-emitting diode technology or organic light-emitting diode technology, and which enables the light-emitting display device to be manufactured in a simple and more practical manner.

[0006] The present inventors have conducted extensive research to solve the above-mentioned problems and have completed the present invention having the following gist.

[0007] That is, the present invention includes the following: [1] A method for manufacturing a light-emitting display device by using photolithographic patterning, wherein a resist layer used to form a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent, the method comprising: (i) forming a light-emitting layer-forming material layer and then laminating a resist layer on the light-emitting layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting layer-forming material layer using the resist pattern as a mask to form a light-emitting layer pattern; and (iv) exposing the resist pattern laminated on the light-emitting layer to light, and then peeling the resist pattern from the light-emitting layer. [2] The method for manufacturing a light-emitting display device according to [1], wherein the resist layer used to form the resist pattern is thermally crosslinked by pre-baking, and the crosslinked structure is dissociated by light irradiation. [3] The method for manufacturing a light-emitting display device according to [1] or [2], wherein the peeling is either peeling with a solvent or peeling using a mechanical peeling means. [4] The method for manufacturing a light-emitting display device according to [3], wherein the peeling is peeling using a mechanical peeling means. [5] The method for manufacturing a light-emitting display device according to [4], wherein the peeling using a mechanical peeling means is peeling using an adhesive or peeling with an adhesive film. [6] The method for manufacturing a light-emitting display device according to any of [1] to [5], wherein the light-emitting display device is a quantum dot EL device or an organic EL device.[7] A method for manufacturing a light-emitting display device comprising: a substrate; a plurality of electrodes provided on the substrate and arranged in a first direction and a second direction; banks provided on the substrate and the electrodes and formed in a lattice shape to surround each of the electrodes; and light-emitting layers provided on the electrodes, wherein the banks protrude further than the electrodes in a third direction perpendicular to the first direction and the second direction, wherein a resist layer used for forming a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent, and the method for manufacturing the light-emitting display device includes: (a) forming a first functional layer on the substrate on which the electrodes and the banks are formed; (b) forming a light-emitting layer-forming material layer on the first functional layer; (c) forming a resist layer on the light-emitting layer-forming material layer; and (d) patterning the resist layer to form a resist pattern. (e) etching the light-emitting layer-forming material layer, or the light-emitting layer-forming material layer and the first functional layer, using the resist pattern as a mask to form a light-emitting layer, or a pattern of a light-emitting layer and a functional layer; (f) exposing the resist pattern laminated on the light-emitting layer to light, and then peeling the resist pattern from the light-emitting layer. [8] The light-emitting layer on the electrode separated by the bank each serves as a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), or a light-emitting layer corresponding to blue (B). The method for manufacturing a light-emitting display device according to [7],(9) The method for manufacturing a light-emitting display device according to [8], having a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), and a light-emitting layer corresponding to blue (B), the method comprising: (s) performing (a); (t) performing (b) to (e) in order to form a light-emitting layer corresponding to any one color (x color) selected from red (R), green (G), and blue (B); (u) performing (b) to (e) in order to form a light-emitting layer corresponding to any one color (y color) selected from the remaining colors excluding x color among red (R), green (G), and blue (B); (v) performing (b) to (e) in order to form a light-emitting layer corresponding to the remaining color (z color) excluding x color and y color among red (R), green (G), and blue (B); and (w) performing (f).

[10] The method for producing a light-emitting display device according to any one of [7] to [9], wherein the resist layer used to form the resist pattern is thermally crosslinked by pre-baking, and the crosslinked structure is dissociated by light irradiation.

[11] The method for producing a light-emitting display device according to any one of [7] to

[10] , wherein the peeling is performed using a solvent or a mechanical peeling means.

[12] The method for producing a light-emitting display device according to

[11] , wherein the peeling is performed using a mechanical peeling means.

[13] The method for producing a light-emitting display device according to

[12] , wherein the peeling using a mechanical peeling means is a pressure-sensitive adhesive or a pressure-sensitive adhesive film.

[14] The method for producing a light-emitting display device according to any one of [7] to

[13] , wherein the light-emitting display device is a quantum dot EL device or an organic EL device.

[0008] According to the present invention, it is possible to provide a method for manufacturing a light-emitting display device, which is an EL device that uses quantum dot light-emitting diode technology or organic light-emitting diode technology, and which can manufacture a light-emitting display device in a simple and more practical manner.

[0009] [Correction based on Rule 91 05.03.2025] A schematic cross-sectional view of an example of an EL device. A schematic cross-sectional view of another example of an EL device. A schematic cross-sectional view of another example of an EL device. A diagram (1) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (2) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (3) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (4) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (5) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (6) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. A diagram (7) for explaining one aspect (first embodiment) of manufacturing a laminate constituting a light-emitting display device. FIG. 8 is a diagram (part 8) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 9 is a diagram (part 9) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (part 10) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 11 is a diagram (part 11) for explaining one mode (first embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 12 is a diagram (part 12) for explaining another mode (second embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 3 is a diagram (part 3) for explaining another mode (second embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 4 is a diagram (part 4) for explaining another mode (second embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 5 is a diagram (part 5) for explaining another mode (second embodiment) of manufacturing a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (part 6) for explaining another mode (second embodiment) of manufacturing a laminate that constitutes a light-emitting display device.FIG. 7 is a diagram (No. 7) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 8 is a diagram (No. 8) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 9 is a diagram (No. 9) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 10 is a diagram (No. 11) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 12 is a diagram (No. 12) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 13 is a diagram (No. 13) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 14 is a diagram (No. 14) for explaining another aspect (second embodiment) of the manufacture of a laminate that constitutes a light-emitting display device. FIG. 15 is a diagram (part 15) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 16 is a diagram (part 16) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 17 is a diagram (part 17) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 18 is a diagram (part 18) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 19 is a diagram (part 19) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 20 is a diagram (part 20) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 21 is a diagram (part 21) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. A schematic cross-sectional view of an example of an apparatus for manufacturing a light-emitting display device. FIG. 19 is a diagram (part 19) for explaining another aspect (second embodiment) of the manufacture of a laminate constituting a light-emitting display device. FIG. 10 is a diagram (part 2) for explaining another mode (third embodiment) of manufacturing a laminate that constitutes a light-emitting display device.FIG. 3 is a diagram (part 3) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 4 is a diagram (part 4) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 5 is a diagram (part 5) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 6 is a diagram (part 6) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 7 is a diagram (part 7) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 8 is a diagram (part 8) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 9 is a diagram (part 9) for explaining another embodiment (third embodiment) of the manufacture of a laminate that constitutes a light-emitting display device; FIG. 1 is a diagram (part 1) for explaining another embodiment (fourth embodiment) of a laminate that constitutes a light-emitting display device.

[0010] <Method for manufacturing a light-emitting display device> The present invention relates to a method for manufacturing a light-emitting display device using photolithographic patterning. In the manufacturing method of the present invention, a resist layer used for forming a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent.

[0011] One of the features of the method for manufacturing a light-emitting display device of the present invention is that it includes the following steps (i) to (iv). That is, the method for manufacturing a light-emitting display device of the present invention includes: (i) forming a light-emitting layer-forming material layer, and then laminating a resist layer on the light-emitting layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting layer-forming material layer using the resist pattern as a mask to form a light-emitting layer pattern; and (iv) exposing the resist pattern laminated on the light-emitting layer, and then peeling the resist pattern from the light-emitting layer.

[0012] Another feature of the method for manufacturing a light-emitting display device of the present invention is that it includes the following steps (a) to (f) for the light-emitting display device described below. (a) forming a first functional layer on the substrate on which the electrodes and the banks are formed; (b) forming a light-emitting layer-forming material layer on the first functional layer; (c) forming a resist layer on the light-emitting layer-forming material layer; (d) patterning the resist layer to form a resist pattern; (e) etching the light-emitting layer-forming material layer, or the light-emitting layer-forming material layer and the first functional layer using the resist pattern as a mask, to form a light-emitting layer, or a pattern of the light-emitting layer and the functional layer; (f) exposing the resist pattern laminated on the light-emitting layer to light, and then peeling the resist pattern from the light-emitting layer.

[0013] Furthermore, another feature of the method for manufacturing a light-emitting display device of the present invention is that, in the method for manufacturing a light-emitting display device comprising the above steps (a) to (f), when the light-emitting layer has a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), and a light-emitting layer corresponding to blue (B), the method further comprises the following steps (s) to (w): In other words, the method for manufacturing a light-emitting display device of the present invention is a method for manufacturing a light-emitting display device having a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), and a light-emitting layer corresponding to blue (B), the method comprising: (s) performing (a); (t) performing (b) to (e) in order to form a light-emitting layer corresponding to any one color (x color) selected from red (R), green (G), and blue (B); (u) performing (b) to (e) in order to form a light-emitting layer corresponding to any one color (y color) selected from the remaining colors excluding x color among red (R), green (G), and blue (B); (v) performing (b) to (e) in order to form a light-emitting layer corresponding to the remaining color (z color) excluding x color and y color among red (R), green (G), and blue (B); and (w) performing (f).

[0014] <<Light-Emitting Display Device>> A preferred embodiment of the light-emitting display device according to the present invention includes a substrate, a plurality of electrodes arranged on the substrate in a first direction and a second direction, banks formed in a lattice pattern on the substrate and the electrodes so as to surround each electrode, and a light-emitting layer arranged on the electrodes, wherein the banks protrude beyond the electrodes in a third direction perpendicular to the first and second directions. Examples of the light-emitting display device include a quantum dot EL device (inorganic EL device) using a quantum dot light-emitting diode (QLED) and an organic EL device using an organic light-emitting diode (OLED).

[0015] <<<Specific Structure of Light-Emitting Display Devices (EL Devices)>>> An EL (Electroluminescence) device includes at least an anode that injects holes, a cathode that injects electrons, and an EL medium sandwiched between the electrodes, where the holes and electrons combine to emit light. EL devices are often provided on a substrate.

[0016] A schematic cross-sectional view of an example of an EL device is shown in FIG. 1A . Schematic cross-sectional views of other examples of EL devices are also shown in FIGS. 1B and 1C . An EL device 10 is shown in FIG. 1A , in which an electrode (e.g., an anode electrode) 2, a hole injection layer 3, a hole transport layer 4, an emissive layer 5, an electron transport layer 6, an electron injection layer 7, and an upper electrode (e.g., a cathode electrode) 8 are stacked on a substrate. The layers between the anode electrode and the cathode electrode, including the emissive layer 5 and at least one layer selected from the hole injection layer 3, the hole transport layer 4, the electron transport layer 6, and the electron injection layer 7, are collectively referred to as an EL stack 9. Layers known to form an EL device other than those described above can also be added. It is also possible to reduce the number of layers; for example, a structure in which the hole injection layer or the electron injection layer is appropriately omitted, as shown in FIG. 1B . Particularly preferred embodiments of the EL device shown in FIG. 1A include quantum dot EL devices and organic EL devices. 1A is a quantum dot EL device, quantum dot EL device 10 has a substrate on which an electrode (e.g., an anode electrode) 2, a hole injection layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, an electron injection layer 7, and an upper electrode (e.g., a cathode electrode) 8 are stacked. More preferred embodiments of the quantum dot EL device include a substrate on which an electrode (e.g., an anode electrode) 2, a hole injection layer 3, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, and an upper electrode (e.g., a cathode electrode) 8 are stacked, and a substrate on which an electrode (e.g., an anode electrode) 2, a hole transport layer 4, a light-emitting layer 5, an electron transport layer 6, and an upper electrode (e.g., a cathode electrode) 8 are stacked.

[0017] Another example of an EL device is one in which the positive and negative electrodes of FIG. 1A are reversed. For example, EL device 10 shown in FIG. 1C has an electrode (e.g., a cathode electrode) 2', an electron injection layer 3', an electron transport layer 4', an emissive layer 5', a hole transport layer 6', a hole injection layer 7', and an upper electrode (e.g., an anode electrode) 8' stacked on a substrate. The layers between the anode electrode and the cathode electrode are collectively referred to as an EL stack 9'.

[0018] Anode Electrode When electroluminescence (EL) is viewed through the anode electrode, the anode electrode is essentially light-transmitting. The anode electrode may be a transparent electrode. Common transparent anode materials used in the present invention include, but are not limited to, indium-tin oxide (ITO), indium-zinc oxide (IZO), and tin oxide. Furthermore, zinc oxide doped with aluminum or indium, magnesium-indium oxide, and nickel-tungsten oxide may also be used. In addition to these oxides, metal nitrides such as gallium nitride, metal selenides such as zinc selenide, and metal sulfides such as zinc sulfide can also be used as the anode. If electroluminescence (EL) is not viewed through the anode, any of several conductive materials known to be usable in organic EL devices can be selected. For example, metals such as aluminum, molybdenum, gold, iridium, silver, and magnesium, the above-mentioned transparent conductive oxides, or combinations thereof can be used.

[0019] - Cathode Electrode - The upper electrode (cathode electrode) may be a metal electrode. If EL is viewed through the cathode, the cathode electrode is transparent or nearly transparent. To achieve this, the metal must be thin, and the thickness of the cathode electrode is preferably less than 25 nm. The cathode electrode may be made of a transparent conductive oxide (e.g., indium-tin oxide, indium-zinc oxide), or a combination of these materials. If EL is not viewed through the cathode, any of several conductive materials known to be usable in organic EL devices may be selected. For example, metals such as aluminum, molybdenum, gold, iridium, silver, and magnesium, the above-mentioned transparent conductive oxides, or a combination thereof may be used.

[0020] Hole Injection Layer—The hole injection layer may be formed from one material or a mixture of materials. The hole injection layer may be divided into several layers with different compositions. The hole injection layer may improve the film-forming properties of the subsequent layer and facilitate hole injection into the hole injection layer. Suitable materials for the hole injection layer include, for example, thiophene-containing compounds, phosphazene compounds, certain aromatic amine compounds, porphyrin compounds, and phthalocyanine compounds. The hole injection layer may also include inorganic compounds such as metal oxides (e.g., molybdenum oxides), metal nitrides, metal carbides, complexes of metal ions and organic ligands, and complexes of transition metal ions and organic ligands.

[0021] -Hole transport layer- The hole transport layer can be formed of a single or a mixture of organic or inorganic compounds and can be divided into several layers. The hole transport layer can contain, for example, benzidine, fluorene, carbazole, tertiary arylamine, thiophene, or a metal oxide such as nickel oxide, but can also contain other electron-rich materials instead (or in addition).

[0022] -Light-emitting layer- There are light-emitting layers in inorganic EL devices (for example, quantum dot EL devices) and light-emitting layers in organic EL devices, and these will be described separately.

[0023] --Light-emitting layer in inorganic EL devices (e.g., quantum dot EL devices)-- The light-emitting layer is made of a quantum dot material or an oxide film. The quantum dot material may be at least one type of semiconductor nanocrystal selected from the group consisting of II-VI compound semiconductor nanocrystals, III-V compound semiconductor nanocrystals, IV-VI compound semiconductor nanocrystals, and Group IV compound semiconductor nanocrystals. Examples of II-VI compound semiconductor nanocrystals include binary compounds such as CdSe, CdTe, ZnS, ZnSe, and ZnTe; ternary compounds such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, CdZnS, CdZnSe, and CdZnTe; and quaternary compounds such as CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe. Examples of III-V compound semiconductor nanocrystals include binary compounds such as GaN, GaP, GaAs, GaSb, InP, InAs, or InSb; ternary compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, InNP, InNAs, InNSb, InPAs, InPSb, or GaAlNP; and quaternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb. Examples of IV-VI compound semiconductor nanocrystals include binary compounds such as PbS, PbSe, or PbTe; ternary compounds such as PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe; and quaternary compounds such as SnPbSSe, SnPbSeTe, or SnPbSTe. Examples of Group IV compound semiconductor nanocrystals include, but are not limited to, simple compounds such as Si and Ge; and binary compounds such as SiC and SiGe.The semiconductor nanocrystals described above preferably have a core / shell structure (core / shell nanocrystals) in which a shell is formed of a wide bandgap semiconductor material, such as CdSe / ZnS, CdSe / ZnSe, CdTe / ZnS, CdTe / ZnSe, CdSe / CdS, CdS / ZnS, CdS / ZeSe, InP / ZnS, or PbSe / ZnS. The oxide film is preferably composed of an oxide doped with a luminescent center. The luminescent center is not particularly limited, and transition metal ions or rare earth ions can be appropriately selected depending on the purpose, such as Ti, Cr, Mn, Cu, W, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, or Yb. The host oxide can be appropriately selected depending on the purpose, but it is preferable that the band gap energy is equal to or greater than the excitation energy of the luminescence center, and it is also preferable that the band gap energy is equal to or greater than the luminescence energy of the luminescence center. Examples of such host oxides include Al. ２ O ３ , Ga ２ O ３ , La ２ O ３ , ZrO ２ , YAO (Yttrium Aluminum Oxide), YGO (Yttrium Gadolinium Oxide), LAO (Lanthanum Aluminum Oxide), etc. The concentration of the luminescent center can be appropriately selected depending on the purpose, but for example, it is preferably 10 atom % or less of the host cation, and particularly preferably about 1 to 5 atom %.

[0024] --Emitting Layer in Organic EL Devices-- The emitting layer typically contains a host material and a light-emitting dopant. Injected holes and electrons recombine in the emitting layer. Host materials include hole transport layer materials, electron transport layer materials, mixtures of hole transport layer materials and electron transport layer materials, and ambipolar materials that already have the ability to transport holes and electrons. Examples of host materials for singlet emission include, but are not limited to, polycyclic aromatic compounds such as anthracene derivatives. Examples of host materials for triplet emission include, but are not limited to, carbazole compounds and aromatic amines. Typical singlet-emitting dopants are aromatic organic compounds, and typical triplet-emitting dopants are, but are not limited to, metal complexes of iridium or platinum.

[0025] The electron transport layer can be formed from a single or a mixture of organic or inorganic compounds. Typical electron transport layer materials are metal-oxine chelates such as Alq, metal oxides such as zinc oxide, zinc magnesium oxide, and tin oxide, phenanthroline derivatives such as BCP, triazene, benzimidazole, triazole, and oxadiazole, silane compounds such as silacyclopentadiene derivatives, and boron derivatives.

[0026] Electron Injection Layer—The electron injection layer may comprise an electron transport material and a reductive dopant at or near the interface between the cathode and the electron transport layer. The reductive dopant can be organic, inorganic, or a metal complex. Typical reductive dopants include alkali metals, such as cesium or alkali metal mixtures. The electron injection layer may also comprise an alkali metal complex, alkali metal salt, or alkali metal oxide (e.g., lithium quinolate, lithium fluoride, lithium oxide) that forms a reductive dopant on top of a cathode material deposit, such as aluminum.

[0027] Formation of Each Layer—Methods for forming an EL medium material on a substrate include, for example, vapor deposition and coating. Many methods for forming a film of an EL medium material on a substrate exist, including, but are not limited to, solution coating, vapor deposition, and transfer from a donor sheet. In an embodiment of the present invention, some of the functional layers selected from the light-emitting layer, hole injection layer, hole transport layer, electron injection layer, and electron transport layer are formed by vapor deposition, for example, physical vapor deposition in a reduced pressure environment. However, in the case of a quantum dot light-emitting layer in an inorganic EL device, the light-emitting layer is preferably formed by coating. For example, in the case of an inorganic quantum dot EL device, the functional layers such as the hole injection layer, hole transport layer, and electron transport layer can be formed by vapor deposition, and the light-emitting layer can be formed by coating. Furthermore, in the case of an inorganic quantum dot EL device, the functional layers such as the hole injection layer, hole transport layer, and electron transport layer, as well as the light-emitting layer, can be formed by coating. Furthermore, for example, in the case of an organic EL device, each functional layer such as a hole injection layer, a hole transport layer, an electron transport layer, and the light emitting layer may be formed by vapor deposition.

[0028] <<<About Quantum Dot EL Devices>>> Quantum dot EL devices using quantum dots in the light-emitting layer will be described in more detail. Quantum dots (QDs) are nanocrystalline particles whose radius is smaller than or close to the Bohr exciton radius, and their particle diameters are typically between 1 and 20 nm. Quantum dots exhibit quantum confinement effects and can emit fluorescence when excited. Quantum dot EL devices have advantages such as high luminous efficiency, a wide color range, more realistic color reproduction, and lower energy consumption. A quantum dot EL device includes a light-emitting layer formed from a quantum dot material. The quantum dot material is sandwiched between an electron transport layer and a hole transport layer. Introducing a light-emitting layer between the electron transport layer and the hole transport layer can produce light of a desired wavelength. An electric field is applied to the quantum dot EL device to transport electrons and holes to the light-emitting layer. In the light-emitting layer, the electrons and holes are trapped in the quantum dots, combine, and emit photons.

[0029] The light-emitting display device according to the present invention is manufactured by a manufacturing method including, for example, the following steps (i) to (iv): (i) forming a light-emitting layer-forming material layer, and then laminating a resist layer on the light-emitting layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting layer-forming material layer using the resist pattern as a mask to form a light-emitting layer pattern; (iv) exposing the resist pattern laminated on the light-emitting layer to light, and then peeling the resist pattern from the light-emitting layer.

[0030] More specifically, the light-emitting display device according to the present invention is manufactured by a manufacturing method including the following steps (a) to (f): (a) forming a first functional layer on the substrate on which the electrodes and the banks are formed; (b) forming a light-emitting layer-forming material layer on the first functional layer; (c) forming a resist layer on the light-emitting layer-forming material layer; (d) patterning the resist layer to form a resist pattern; (e) using the resist pattern as a mask, etching the light-emitting layer-forming material layer or the light-emitting layer-forming material layer and the first functional layer to form a light-emitting layer or a pattern of a light-emitting layer and a functional layer; (f) exposing the resist pattern laminated on the light-emitting layer to light, and then peeling the resist pattern from the light-emitting layer.

[0031] In particular, when the light-emitting display device according to the present invention is a light-emitting display device having a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), and a light-emitting layer corresponding to blue (B), a more preferred embodiment is manufactured by a manufacturing method including the following steps (s) to (w): (s) performing step (a); (t) performing steps (b) to (e) to form a light-emitting layer corresponding to any one color (color x) selected from red (R), green (G), and blue (B); (u) performing steps (b) to (e) to form a light-emitting layer corresponding to any one color (color y) selected from the remaining colors excluding color x among red (R), green (G), and blue (B); (v) performing steps (b) to (e) to form a light-emitting layer corresponding to the remaining color (color z) excluding colors x and y among red (R), green (G), and blue (B); and (w) performing step (f).

[0032] [Correction under Rule 91 05.03.2025] A preferred embodiment of the method for manufacturing a light-emitting display device of the present invention is, for example, the first embodiment described below. The light-emitting display devices shown in Figures 2A-I, 2J-K (Figures 2A-I and 2J-K are collectively referred to as "Figure 2"), 3A-R, 3S (Figures 3A-R and 3S are collectively referred to as "Figure 3"), 4A-B (Figures 4A-B are collectively referred to as "Figure 4"), 6A-I (Figures 6A-I are collectively referred to as "Figure 6"), and 7 will be described below, taking quantum dot EL devices as examples. However, since inorganic and organic EL devices have similar layer structures for each functional layer other than the light-emitting layer, the difference between them being whether the light-emitting layer uses an inorganic or organic material, the description of quantum dot EL devices using Figures 2-4 and 6-7 below can also be applied to organic EL devices.

[0033] <<First Embodiment>> A method for manufacturing a laminate that constitutes a light-emitting display device will be described below with reference to Figures 2A to 2I. As shown in Figure 2A, an electrode 2 (e.g., an anode electrode) is formed on a substrate 1. For example, a plurality of electrodes 2 are formed on the substrate 1, arranged in a first direction and a second direction. As shown in Figure 2A, banks (partition walls) 12 are provided between the electrodes. The banks 12 can be provided as follows.

[0034] -Bank- After forming a bank layer on a substrate provided with electrodes, the bank is molded to form a grid-shaped bank 12. The bank 12 is preferably formed in an isosceles trapezoidal shape so as to be provided on the substrate and the electrodes, surround each electrode, and separate two electrodes 2 aligned in a first direction on the substrate 1. The bank 12 is formed to protrude beyond the electrodes 2 in a third direction perpendicular to the first and second directions. The bank layer is a layer made of a polymer material such as polyimide or acrylic. In other words, the bank 12 formed by molding the bank layer is also made of such a polymer material.

[0035] Next, a first functional layer 15 including a hole injection layer and a hole transport layer is formed on the upper side of the electrode 2 and the bank 12 formed in Fig. 2A. Here, the first functional layer 15 is a hole transport layer, or a layer in which a hole injection layer and a hole transport layer are laminated in this order. The first functional layer 15 may be formed by either coating or vapor deposition.

[0036] Next, as shown in Fig. 2B, a quantum dot light-emitting layer-forming material layer 20 is formed on the upper side of the first functional layer 15 formed in Fig. 2A. The light-emitting layer-forming material layer 20 is preferably formed by coating. For example, the quantum dot light-emitting layer-forming material layer 20, which is a quantum material layer, may be formed by spin coating using a quantum dot material solution.

[0037] Next, as shown in FIG. 2C, a resist layer 21 is formed on the upper side of the light-emitting layer-forming material layer 20 formed in FIG. 2B. The resist layer is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent. A detailed explanation of the positive photosensitive resin composition, which is the resist material that forms the resist layer, will be given later. In this specification, the positive photosensitive resin composition may be referred to as a resist coating solution or a resist material, which are synonymous terms. The resist layer 21 shown in FIG. 2C is obtained by applying a positive photosensitive resin composition, which is the resist coating solution, and pre-baking (heating) the resulting coating film.

[0038] FIG. 2E shows the state in which the resist layer 21 formed in FIG. 2C is removed from unnecessary areas, leaving only the desired area corresponding to the light-emitting layer formation area, resulting in the formation of a resist pattern 21′. In the photolithography development process, as shown in FIG. 2D, a mask 22 is used to block light irradiation in the desired area where the resist layer is to be left corresponding to the light-emitting layer formation area, and light is irradiated (also referred to as exposure) to the resist layer corresponding to the area other than the mask 22. Since the resist layer 21 is a positive photoresist layer, the exposed photosensitive portion is removed by contact (immersion) with a developer, as shown in FIG. 2E. Incidentally, "contacting" with a developer or the like includes immersion in the developer or spraying with a developer or the like. As shown in FIG. 2E, the light-emitting layer-forming material layer 20 has developer resistance, so a resist pattern 21′ can be formed.

[0039] Next, as shown in FIG. 2F , the resist pattern 21′ formed in FIG. 2E is used as a mask to perform an etching process (e.g., wet etching) on ​​the light-emitting layer-forming material layer 20, thereby forming a pattern of the light-emitting layer 20′. When forming the pattern of the light-emitting layer 20′ by this etching process, etching may be performed not only on the light-emitting layer-forming material layer 20 but also on the first functional layer 15. That is, the resist pattern 21′ formed in FIG. 2E may be used as a mask to perform an etching process (e.g., wet etching) on ​​the light-emitting layer-forming material layer 20 and the first functional layer 15, thereby forming a pattern of the light-emitting layer 20′ and the functional layer 15′. However, a detailed description of the manner in which the pattern of the light-emitting layer 20′ and the functional layer 15′ is provided below.

[0040] Returning to the description of FIG. 2G , next, as shown in FIG. 2G , the resist pattern 21′ formed in FIG. 2E and laminated on the light-emitting layer 20′ is exposed to light. After exposure, the resist pattern 21′ is peeled off from the light-emitting layer 20′ using a peeling means. Here, the peeling means may be either solvent-based or mechanical peeling means. For example, in solvent-based peeling, the exposed resist pattern 21′ is brought into contact with (immersed in) a peeling solution, thereby peeling the resist pattern 21′ from the light-emitting layer 20′. Alternatively, in mechanical peeling, as shown in FIG. 2H , an adhesive film 25 is attached to the exposed resist pattern 21′ using a means having an adhesive film such as that shown in FIG. 5, thereby peeling the resist pattern 21′ from the light-emitting layer 20′. A detailed description of the mechanical peeling means will be given later.

[0041] This results in a laminate in which the light-emitting layer 20' is disposed at a desired position on the first functional layer 15, with the resist layer on the light-emitting layer 20' having been removed, as shown in FIG. 2I.

[0042] [Correction Based on Rule 91 05.03.2025] Next, as shown in FIG. 2J, a second functional layer 27 is formed on the upper side of the light-emitting layer 20′. The second functional layer 27 is preferably an electron transport layer. The second functional layer 27 may be formed by either vapor deposition or coating. In the above embodiment, the first functional layer 15 is a hole transport layer or a stack of a hole injection layer and a hole transport layer, and the second functional layer 27 is an electron transport layer. However, if the layer structure of the EL element is, for example, as shown in FIG. 1C, the first functional layer 15 would be an electron transport layer, and the second functional layer 27 would be a hole transport layer or a stack of a hole injection layer and a hole transport layer. The types of the first and second functional layers are appropriately selected depending on the desired layer structure of the EL element.

[0043] [Correction based on Rule 91 05.03.2025] Next, as shown in Fig. 2K, an upper electrode 28 (e.g., a metal electrode (corresponding to a cathode electrode)) is formed on the upper side of the second functional layer 27. The upper electrode 28 can be formed by vapor deposition.

[0044] [Correction based on Rule 91 05.03.2025] In addition to the embodiment shown in Fig. 2K, the light-emitting display device having the upper electrode 28 may also have an embodiment in which only the upper electrode 28 is disposed on the bank 12. In this case, the first functional layer 15 and the second functional layer 27 are not disposed on the bank 12, and this can be achieved by removing the first functional layer 15 and the second functional layer 27 by etching before laminating the upper electrode 28. A detailed description of this embodiment of the light-emitting display device in which only the upper electrode 28 is disposed on the bank 12 will be given later.

[0045] <<<Resist Material>>> The resist layer is formed using a positive-type photosensitive resin composition containing a positive-type photosensitive component and a solvent. Any resist material can be used without particular limitations, as long as it is capable of performing the photolithography patterning process shown in Figures 2A to 2I above. The resist layer undergoes thermal crosslinking by prebaking, becoming insoluble in a developer, and the crosslinked structure dissociates upon light irradiation, becoming soluble in the developer. The type of resist material forming the resist layer is appropriately selected depending on the manufacturing process. For example, as described above, the resist layer is preferably one that not only becomes insoluble in a developer, but also becomes insoluble in the solvent contained in the light-emitting layer-forming material composition that forms the light-emitting layer-forming material layer, and the resist solvent contained in the resist material. For example, the resist material may be composed of a polymer having an active hydrogen-containing group, a vinyl ether compound, a photoacid generator, and the like. More specifically, the resist material used is one that undergoes a hemiacetal esterification reaction using a resin, such as an acrylic resin, polyester resin, novolac resin, or polyamic acid, having a carboxyl group in its side chain, and a compound having a polyfunctional vinyl ether group. In this case, the reaction mechanism in the resist layer is as follows: (1) Pre-bake stage: A hemiacetal esterification reaction occurs between an active hydrogen-containing group and a polyfunctional vinyl ether group. That is, the solvent components of the resist coating solution are volatilized by pre-bake, and simultaneously, the solvent-soluble groups, which are the active hydrogen-containing groups, are blocked, forming crosslinked structures, making the resist insoluble in the developer. (2) Light irradiation (exposure) stage: In the light-irradiated area, the photoacid generator decomposes, generating a strong acid. In the light-irradiated area, an acid hydrolysis reaction catalyzed by the generated acid cleaves the hemiacetal ester structure. At the same time as the crosslinked structure is cleaved, the solvent-soluble groups are regenerated, and the exposed area is dissolved by development. If necessary, post-exposure baking (PEB) may be performed to promote diffusion of the generated acid.

[0046] In the present invention, the exposure stage occurs at least once during the development process, or if the stripping process is performed using a dissolving and stripping means, there are two exposure stages: during the development process and the stripping process. During the development process, as shown in FIGS. 2D and 2E, the resist layer is selectively exposed to light, and the exposed photosensitive areas are dissolved in a developer and removed. During the stripping process, as shown in FIGS. 2G and 2I, the resist pattern is exposed to light, and the exposed photosensitive areas are dissolved in a stripping solution and removed. As described above, the photoreaction mechanism of the resist layer during the development process and the stripping process is the same. Therefore, in the present invention, the same solvent can be used for the developer and the stripping solution. The solvent contained in the resist coating solution forms an insoluble state in the crosslinked film when a crosslinked structure is formed in the pre-bake stage. Therefore, in the present invention, the solvent contained in the resist coating solution (also referred to as the "solvent contained in the positive-type photosensitive resin composition" or simply "solvent") can be the same as the developer and the stripping solution. That is, in the present invention, the solvent contained in the positive photosensitive resin composition and the developer used for pattern formation can be the same solvent. Furthermore, when a solvent-based stripping method is used as the stripping method, the solvent contained in the positive photosensitive resin composition, the developer used for pattern formation, and the stripper used for stripping the pattern obtained by pattern formation can be the same solvent.

[0047] When a light-emitting display device is manufactured using a photolithography patterning process such as that shown in Figures 2A to 2I, organic solvents can be used as the solvent contained in the positive-type photosensitive resin composition used in such a process, as well as the developer and stripper. Since some organic solvents cause little damage to quantum dot EL devices and organic EL devices, various organic solvents can be selected as desired. Examples of organic solvents that can be used include alkylene glycol monoalkyl ethers, alkylene glycol monoalkyl ether acetates, ester-based solvents, ketone-based solvents, and alcohol-based solvents.Examples of alkylene glycol monoalkyl ethers include propylene glycol monomethyl ether (PGME), ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monoethyl ether, and propylene glycol monopropyl ether. Examples of alkylene glycol monoalkyl ether acetates include propylene glycol monomethyl ether acetate (PGMEA), methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate. Examples of ester solvents include ethyl ethoxyacetate, ethyl methoxyacetate, methyl 3-methoxypropionate, and 3-methylpropionate. Examples of suitable solvents include ethyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, ethyl lactate, and butyl lactate. Examples of suitable ketone solvents include methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, 3-methyl-2-pentanone, 2-pentanone, 2-heptanone, and γ-butyrolactone. Examples of suitable alcohol solvents include methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, and t-butanol. Examples of suitable alkylene glycols include ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, and tripropylene glycol. These solvents can be used alone or in combination of two or more.In particular, in the present invention, non-aqueous solvents such as methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, butyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, 3-methyl-2-pentanone, 2-pentanone, 2-heptanone, propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, and propylene glycol monopropyl ether acetate are preferably used. The photolithographic patterning process of the present invention allows for the use of water-free solvents as the developer and stripper, thereby enabling the production of light-emitting display devices using solvents that do not affect the display device. Furthermore, the photolithographic patterning process of the present invention allows for the solvent, developer, and stripper contained in the positive-tone photosensitive resin composition to be composed of the same solvent, thereby simplifying the production method. Here, "using the same solvent" means, for example, that when propylene glycol monomethyl ether (PGME) is used as the solvent contained in the positive photosensitive resin composition, the developer and stripper are also propylene glycol monomethyl ether (PGME). For example, when propylene glycol monomethyl ether (PGME) is used as the solvent contained in the positive photosensitive resin composition, if the developer and stripper are propylene glycol monomethyl ether acetate (PGMEA), they cannot be considered to be the same solvent, and even if they are propylene glycol monoethyl ether, they cannot be considered to be the same solvent. Furthermore, according to the photolithography patterning process of the present invention, non-fluorine-based organic solvents can be used as the solvent, developer, and stripper contained in the positive photosensitive resin composition, so a manufacturing method that addresses environmental issues can be provided.

[0048] <<<<Mechanical Peeling Means>>> Mechanical peeling means refers to, for example, a means for peeling a resist layer from a light-emitting layer or a light-emitting display device by applying an external force. Preferred examples of mechanical peeling means include means having an adhesive or an adhesive film. This differs from chemical peeling methods that use a peeling solution, in which the resist layer is contacted (immersed) in a peeling solution to dissolve the resist layer and peel it from the light-emitting display device. In the present invention, the type of mechanical peeling means is not particularly limited as long as it can peel an unnecessary resist layer from a light-emitting display device by applying force, and can be appropriately selected depending on the purpose. For example, an example of a mechanical peeling means is a means having an adhesive. The adhesive is applied to the object to be peeled, i.e., the "unnecessary resist layer," and the adhesive adhering to the object is peeled from the light-emitting display device, thereby peeling (separating) the object from the light-emitting display device. Furthermore, the shape of the adhesive-containing means is not particularly limited. For example, it may be in the form of a film. A preferred embodiment of the adhesive-containing means is a means having an adhesive film. The adhesive film may be any film having adhesive properties, and may be a layer of adhesive, a film of the adhesive itself, or a substrate film to which an adhesive has been applied (e.g., coated). In the present invention, it is more preferable that the adhesive film is in the form of a roll, since this film can be used in the manufacturing apparatus for the light-emitting display device of the present invention described below. A detailed description of the manufacturing apparatus for the light-emitting display device will be given later.

[0049] -Adhesive Film- A preferred embodiment of the adhesive film according to the present invention is, for example, a film in which a substrate film is subjected to adhesive processing, i.e., a pressure-sensitive adhesive is applied. The pressure-sensitive adhesive used in the adhesive film is not particularly limited, and examples thereof include silicone-based, acrylic-based, urethane-based, and rubber-based pressure-sensitive adhesives. The thickness of the pressure-sensitive adhesive layer is preferably, for example, 1 μm or more. The substrate film used in the adhesive film is not particularly limited, and examples thereof include polyester, polyvinyl chloride, polyethylene, polypropylene, and polyurethane. The thickness of the substrate film is preferably, for example, 15 μm or more from the viewpoint of handleability.

[0050] - Light-emitting display device manufacturing apparatus - Examples of a light-emitting display device manufacturing apparatus that can be suitably used in the light-emitting display device manufacturing method of the present invention include the following: "A light-emitting display device manufacturing apparatus used when manufacturing a light-emitting display device using photolithographic patterning, the apparatus comprising: an adhesive film; means for adhering the adhesive film to a light-emitting display device after a resist pattern has been formed thereon; and means for peeling off an unnecessary resist pattern laminated on the upper side of a display layer from the light-emitting display device by separating the adhesive film adhered to the light-emitting display device from the light-emitting display device."

[0051] --Specific Structure of the Light-Emitting Display Device Manufacturing Apparatus-- A schematic cross-sectional view of an example of a light-emitting display device manufacturing apparatus is shown in Figure 5. This light-emitting display device manufacturing apparatus is used, for example, in the process of peeling off an unnecessary resist pattern using the adhesive film 25 shown in Figure 2H and other figures described above. The apparatus shown in Figure 5 has a structure in which an unwinding / winding device (R to R: roll to roll) and a light-emitting display device conveying device are integrated. As such, the adhesive film is preferably a roll-shaped film. In Figure 5, adhesive film 63 (corresponding to 25 in Figure 2H and other figures described above) is attached to unwinding roll 62 and winding roll 61 and moves in the same direction as the light-emitting display device conveyance direction. After the resist pattern is formed, the light-emitting display device is placed on a conveying substrate 60 and moved so as to be inserted 64 into contact area 65 with adhesive film 63 and then removed 66 from contact area 65 with adhesive film 63. In the contact region 65 where the light-emitting display device and the adhesive film 63 come into contact, an operation of adhering the adhesive film 63 to the light-emitting display device after the resist pattern has been formed and an operation of peeling the adhesive film 63 from the light-emitting display device are performed. For example, the adhesive film 63 is brought into contact with the light-emitting display device using the unwinding roll 62 and the roll 67a (if necessary, roll 67b may also be used in addition to roll 67a). Then, the adhesive film 63 is peeled from the light-emitting display device using the take-up roll 61 and the roll 68a (if necessary, roll 68b may also be used in addition to roll 68a). By peeling the adhesive film 63 from the light-emitting display device while the peeling target is adhered to the adhesive film, the unwanted resist pattern formed on the display layer is peeled from the light-emitting display device.

[0052] <<Second Embodiment>> When the light-emitting display device is a color display device, a color light-emitting display device can be manufactured by repeating the steps shown in Figures 2B to 2F. For example, in Figure 2, assume that a quantum dot light-emitting layer corresponding to red (R) is used as the light-emitting layer-forming material layer 20. In this case, in the laminate shown in Figure 2F that constitutes the light-emitting display device, the light-emitting layer 20' is a quantum dot light-emitting layer corresponding to red (R). A color display device can be manufactured by forming a light-emitting layer corresponding to red (R), followed by a light-emitting layer corresponding to green (G), and then a light-emitting layer corresponding to blue (B). The manufacture of a color display device will be described below with reference to Figure 3. Note that Figure 3 illustrates the formation of light-emitting layers in a quantum dot EL device corresponding to each color in the order of red (R), green (G), and blue (B). However, the order of formation of these colors is not limited. For example, the order can be any order, such as red (R), blue (B), and green (G), or blue (B), green (G), and red (R).

[0053] As shown in Fig. 3A, an electrode 2 (e.g., an anode electrode) is formed on a substrate 1, and a bank (partition) 12 is provided between the electrodes, as shown in Fig. 3A. A first functional layer 15 made of a hole injection layer and a hole transport layer is formed above the electrode 2 and the bank 12. In Fig. 3A, the process up to the formation of the first functional layer 15 is as described above with reference to Figs. 2A and 2B.

[0054] Next, as shown in FIG. 3A, a quantum dot light-emitting layer-forming material layer 30 corresponding to red (R) (also referred to as a first light-emitting layer-forming material layer 30) is formed on the upper side of the first functional layer 15.

[0055] Next, as shown in Fig. 3B, a resist layer 31 is formed on the upper side of the first light-emitting layer-forming material layer 30 corresponding to red (R) formed in Fig. 3A. The resist layer 31 shown in Fig. 3B is obtained by applying a positive photosensitive resin composition, which is a resist coating solution, and then subjecting the resulting coating film to a pre-baking (heating) treatment.

[0056] In the photolithography development step, as shown in Fig. 3C, a mask 32 is used to block light irradiation in a desired area where the resist layer is to be left corresponding to the formation area of ​​the light-emitting layer corresponding to red (R), and light is irradiated (also referred to as exposure) to the resist layer corresponding to the area other than the mask 32, and the exposed photosensitive portion of the resist layer 31 is removed by contacting (immersing) it in a developer, as shown in Fig. 3D. As a result, as shown in Fig. 3D, the resist layer in unnecessary areas of the resist layer 31 formed in Fig. 3B is removed except for the resist layer in the desired area corresponding to the formation area of ​​the light-emitting layer corresponding to red (R), and a resist pattern 31' is formed.

[0057] Next, as shown in FIG. 3E, the resist pattern 31′ formed in FIG. 3D is used as a mask to etch (e.g., wet etching) the first light-emitting layer-forming material layer 30 corresponding to red (R), thereby forming a pattern of the first light-emitting layer 30′. When forming the pattern of the first light-emitting layer 30′ by this etching process, the first functional layer 15 may also be etched, as described in the above section, “First Embodiment.” Similarly, when forming the patterns of the second light-emitting layer 40′ and the third light-emitting layer 50′, described below, the functional layer may also be etched. A detailed description of the embodiment of forming the patterns of the first light-emitting layer 30′ and the functional layer 15′ will be provided later.

[0058] Next, as shown in Figure 3F, a quantum dot light-emitting layer forming material layer 40 (also referred to as a second light-emitting layer forming material layer 40) corresponding to green (G) is formed on the resist pattern 31' formed on the upper side of the first light-emitting layer 30' corresponding to red (R) formed in Figure 3E and on the upper side of the first functional layer 15.

[0059] Next, as shown in Fig. 3G, a resist layer 41 is formed on the upper side of the second light-emitting layer-forming material layer 40 corresponding to green (G) formed in Fig. 3F. The resist layer 41 shown in Fig. 3G is obtained by applying a positive photosensitive resin composition, which is a resist coating solution, and then subjecting the resulting coating film to a pre-baking (heating) treatment.

[0060] In the photolithography development step, as shown in Fig. 3H, a mask 42 is used to block light irradiation in a desired range where the resist layer is to be left corresponding to the formation region of the light-emitting layer corresponding to green (G), and light is irradiated (also referred to as exposure) to the resist layer corresponding to the region other than the mask 42, and the exposed photosensitive portion of the resist layer 41 is removed by contacting (immersing) it in a developer, as shown in Fig. 3I. As a result, as shown in Fig. 3I, the resist layer in unnecessary regions of the resist layer 41 formed in Fig. 3G is removed except for the resist layer in the desired range corresponding to the formation region of the light-emitting layer corresponding to green (G), and a resist pattern 41' is formed.

[0061] Next, as shown in FIG. 3J, the resist pattern 41′ formed in FIG. 3I is used as a mask to perform etching (e.g., wet etching) on ​​the second light-emitting layer formation material layer 40 corresponding to green (G), thereby forming a pattern of the second light-emitting layer 40′.

[0062] Next, as shown in Figure 3K, a quantum dot light-emitting layer forming material layer 50 (also referred to as a third light-emitting layer forming material layer 50) corresponding to blue (B) is formed on the resist pattern 31' formed on the upper side of the first light-emitting layer 30' corresponding to red (R), the resist pattern 41' formed on the upper side of the second light-emitting layer 40' corresponding to green (G), and the first functional layer 15 formed in Figure 3J.

[0063] Next, as shown in Fig. 3L, a resist layer 51 is formed on the upper side of the third light-emitting layer-forming material layer 50 corresponding to blue (B) formed in Fig. 3K. The resist layer 51 shown in Fig. 3L is obtained by applying a positive photosensitive resin composition, which is a resist coating solution, and then subjecting the resulting coating film to a pre-baking (heating) treatment.

[0064] In the photolithography development step, as shown in Fig. 3M, a mask 52 is used to block light irradiation in a desired area where the resist layer is to be left corresponding to the formation area of ​​the light-emitting layer corresponding to blue (B), and light is irradiated (also referred to as exposure) to the resist layer corresponding to the area other than the mask 52. As a result, the exposed photosensitive portion of the resist layer 51 is removed by contacting (immersing) it in a developer, as shown in Fig. 3N. As a result, as shown in Fig. 3N, the resist layer in the desired area corresponding to the formation area of ​​the light-emitting layer corresponding to blue (B) is left, and the resist layer in unnecessary areas of the resist layer 51 formed in Fig. 3L is removed, and a resist pattern 51' is formed.

[0065] Next, as shown in FIG. 3O, the resist pattern 51′ formed in FIG. 3N is used as a mask to perform etching (e.g., wet etching) on ​​the third light-emitting layer formation material layer 50 corresponding to blue (B), thereby forming a pattern of the third light-emitting layer 50′.

[0066] [Correction based on Rule 91 05.03.2025] Next, as shown in Figure 3P, the resist pattern 31' laminated on the first light-emitting layer 30', the resist pattern 41' laminated on the second light-emitting layer 40', and the resist pattern 51' laminated on the third light-emitting layer 50' are exposed to light. After exposure, as shown in Figure 3Q, a peeling means is used to peel the resist pattern 31' from the light-emitting layer 30', the resist pattern 41' from the light-emitting layer 40', and the resist pattern 51' from the light-emitting layer 50'. Here, the peeling means may be either solvent-based or mechanical peeling means (adhesive film 55) as shown in Figure 3S.

[0067] This results in a laminate having the first light-emitting layer 30′, the second light-emitting layer 40′, and the third light-emitting layer 50′ arranged in desired positions on the first functional layer 15, as shown in FIG. 3R, with unnecessary resist layers (resist pattern 31′, resist pattern 41′, and resist pattern 51′) on each light-emitting layer removed.

[0068] 4A, a second functional layer 27 is formed on the first light-emitting layer 30′, the second light-emitting layer 40′, and the third light-emitting layer 50′. The second functional layer 27 is preferably an electron transport layer. The second functional layer 27 may be formed by either vapor deposition or coating.

[0069] Next, as shown in FIG. 4B , an upper electrode 28 (e.g., a metal electrode (corresponding to a cathode electrode)) is formed on the upper side of the second functional layer 27. The upper electrode 28 can be formed by vapor deposition. In this manner, a full-color quantum dot EL light-emitting display device is obtained. Note that, in addition to the embodiment shown in FIG. 4B , an embodiment of the light-emitting display device having the upper electrode 28 formed thereon may also be an embodiment in which only the upper electrode 28 is disposed on the bank 12, as described in the above section <<First Embodiment>>.

[0070] <<Third Embodiment>> A method for manufacturing a laminate constituting a light-emitting display device, which includes a step of forming patterns of a light-emitting layer and a functional layer by etching (for example, wet etching) a light-emitting layer-forming material layer and a functional layer using a resist pattern as a mask, will be described below with reference to FIGS. 6A to 6H .

[0071] As described in the section entitled "First Embodiment" above, a resist pattern 21' can be formed as shown in FIG. 2E. Next, using the resist pattern 21' formed in FIG. 2E as a mask, the light-emitting layer-forming material layer 20 and the first functional layer 15 are etched (e.g., wet-etched), forming a pattern of the light-emitting layer 20' and a pattern of the functional layer 15', as shown in FIG. 6A. The same applies to FIG. 3D described in the section entitled "Second Embodiment" above. That is, using the resist pattern 31' formed in FIG. 3D as a mask, the light-emitting layer-forming material layer 30 and the first functional layer 15 are etched (e.g., wet-etched), forming a pattern of the light-emitting layer 30' and a pattern of the functional layer 15', as shown in FIG. 6B.

[0072] An example of a manufacturing method after FIG. 6B will be described below, which shows how to manufacture a laminate in which a first light-emitting layer 30′, a second light-emitting layer 40′, and a third light-emitting layer 50′ are arranged on a laminate in which a pattern of a light-emitting layer 30′ and a pattern of a functional layer 15′ are formed, as shown in FIG.

[0073] As shown in Fig. 6C, a new first functional layer 15v having the same function as the first functional layer 15 is formed on the upper side of the substrate 1 having the electrode 2 and the resist pattern 31' formed in Fig. 6B. The first functional layer 15v may be formed with the same composition as or a different composition from the first functional layer 15. Next, as shown in Fig. 6D, a quantum dot light-emitting layer-forming material layer 40 corresponding to green (G) (also referred to as a second light-emitting layer-forming material layer 40) is formed on the upper side of the resist pattern 31' formed on the upper side of the first light-emitting layer 30' corresponding to red (R) formed in Fig. 6C and the new first functional layer 15v.

[0074] Next, as shown in Fig. 6E, a resist layer 41 is formed on the upper side of the second light-emitting layer-forming material layer 40 corresponding to green (G) formed in Fig. 6D. The resist layer 41 shown in Fig. 6E is obtained by applying a positive photosensitive resin composition, which is a resist coating solution, and then subjecting the resulting coating film to a pre-baking (heating) treatment.

[0075] In the photolithography development step, as shown in Fig. 6F, a mask 42 is used to block light irradiation in a desired range where the resist layer is to be left corresponding to the formation region of the light-emitting layer corresponding to green (G), and light is irradiated (also referred to as exposure) to the resist layer corresponding to the region other than the mask 42, and the exposed photosensitive portion of the resist layer 41 is removed by contacting (immersing) it in a developer, as shown in Fig. 6G. As a result, as shown in Fig. 6G, the resist layer in unnecessary regions of the resist layer 41 formed in Fig. 6E is removed except for the resist layer in the desired range corresponding to the formation region of the light-emitting layer corresponding to green (G), and a resist pattern 41' is formed.

[0076] Next, as shown in Figure 6H, using the resist pattern 41' formed in Figure 6G as a mask, etching (e.g., wet etching) is performed on the second light-emitting layer forming material layer 40 corresponding to green (G) and the new first functional layer 15v, thereby forming a pattern of the light-emitting layer 40' and a pattern of the functional layer 15v'.

[0077] As described above, the process of forming the pattern of the light-emitting layer 40' corresponding to green (G) and the pattern of the functional layer 15v' using the quantum dot light-emitting layer-forming material layer 40 (also referred to as the second light-emitting layer-forming material layer 40) corresponding to green (G) can be similarly performed using the light-emitting layer-forming material layer 50 (also referred to as the third light-emitting layer-forming material layer 50) corresponding to blue (B), thereby forming the pattern of the light-emitting layer 50' corresponding to blue (B) and the pattern of the new functional layer 15w'. Note that, as described for the first functional layer 15v, the new first functional layer 15w before forming the pattern of the new functional layer 15w' may be formed with the same composition as or a different composition from the first functional layer 15 and the first functional layer 15v. In this way, as shown in FIG. 6I, a laminate can be produced in which a first light-emitting layer 30′ corresponding to red (R), a second light-emitting layer 40′ corresponding to green (G), and a third light-emitting layer 50′ corresponding to blue (B) are arranged.

[0078] <<Fourth Embodiment>> An embodiment of the light-emitting display device may also be such that only the upper electrode 28 is disposed on the bank 12 .

[0079] For example, in addition to the light-emitting display device shown in Figure 4B, the light-emitting display device may be configured as shown in Figure 7, in which no light-emitting layer, first functional layer, or second functional layer is arranged on top of the bank 12, and only the upper electrode 28 is arranged.

[0080] REFERENCE SIGNS LIST 1 Substrate 1' Substrate 2 Electrode 2' Electrode 3 Hole injection layer 3' Electron injection layer 4 Hole transport layer 4' Electron transport layer 5 Light-emitting layer 5' Light-emitting layer 6 Electron transport layer 6' Hole transport layer 7 Electron injection layer 7' Hole injection layer 8 Upper electrode 8' Upper electrode 9 EL laminate 9' EL laminate 10 EL device 12 Bank 15 First functional layer 15' First functional layer pattern 15v New first functional layer 15v' New first functional layer pattern 15w' New first functional layer pattern 20 Light-emitting layer-forming material layer 20' Light-emitting layer 21 Resist layer 21' Resist pattern 25 Adhesive film 27 Second functional layer 28 Upper electrode 30 First light-emitting layer-forming material layer 30' First light-emitting layer 31 Resist layer 31' Resist pattern 32 Mask 40 Second light-emitting layer-forming material layer 40' Second light-emitting layer 41 Resist layer 41' Resist pattern 42 Mask 50 Third light-emitting layer-forming material layer 50' Third light-emitting layer 51 Resist layer 51' Resist pattern 52 Mask 55 Adhesive film 60 Carrying substrate 61 Take-up roll 62 Unwinding roll 63 Adhesive film 64 Insertion 65 Contact area 66 Removal 67a Roll 67b Roll 68a Roll 68b Roll

Claims

1. A method for manufacturing a light-emitting display device using photolithographic patterning, wherein a resist layer used to form a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent, and the method for manufacturing a light-emitting display device includes: (i) forming a light-emitting layer-forming material layer, and then laminating a resist layer on the light-emitting layer-forming material layer; (ii) patterning the resist layer to form a resist pattern; (iii) etching the light-emitting layer-forming material layer using the resist pattern as a mask to form a light-emitting layer pattern; and (iv) exposing the resist pattern laminated on the light-emitting layer, and then peeling the resist pattern from the light-emitting layer.

2. The method for manufacturing a light-emitting display device according to claim 1, wherein the resist layer used to form the resist pattern is thermally crosslinked by pre-baking and the crosslinked structure is dissociated by light irradiation.

3. The method for manufacturing a light-emitting display device according to claim 1, wherein the peeling is performed by using either a solvent or a mechanical peeling means.

4. The method for producing a light-emitting display device according to claim 3, wherein the peeling is performed using a mechanical peeling means.

5. The method for producing a light-emitting display device according to claim 4, wherein the mechanical peeling is performed by using an adhesive or an adhesive film.

6. The method for manufacturing a light-emitting display device according to any one of claims 1 to 5, wherein the light-emitting display device is a quantum dot EL device or an organic EL device.

7. A method for manufacturing a light-emitting display device comprising: a substrate; a plurality of electrodes provided on the substrate and arranged in a first direction and a second direction; banks provided on the substrate and the electrodes and formed in a lattice shape so as to surround each of the electrodes; and light-emitting layers provided on the electrodes, wherein the banks protrude further than the electrodes in a third direction perpendicular to the first and second directions, wherein a resist layer used for forming a resist pattern is formed using a positive photosensitive resin composition containing a positive photosensitive component and a solvent, and the method for manufacturing the light-emitting display device comprises: (a) forming a first functional layer on the substrate on which the electrodes and the banks are formed; (b) forming a light-emitting layer-forming material layer on the first functional layer; (c) forming a resist layer on the light-emitting layer-forming material layer; and (d) patterning the resist layer to form a resist pattern. (e) using the resist pattern as a mask to perform etching on the light-emitting layer-forming material layer, or on the light-emitting layer-forming material layer and the first functional layer, to form a pattern of a light-emitting layer, or a pattern of a light-emitting layer and a functional layer; (f) exposing the resist pattern laminated on top of the light-emitting layer, and then peeling the resist pattern from the light-emitting layer.

8. A method for manufacturing a light-emitting display device as described in claim 7, wherein the light-emitting layers on the electrodes separated by the banks each serve as a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), or a light-emitting layer corresponding to blue (B).

9. A method for manufacturing a light-emitting display device having a light-emitting layer corresponding to red (R), a light-emitting layer corresponding to green (G), and a light-emitting layer corresponding to blue (B), comprising: (s) performing (a); (t) performing (b) to (e) to form a light-emitting layer corresponding to any one color (x color) selected from red (R), green (G), and blue (B); (u) performing (b) to (e) to form a light-emitting layer corresponding to any one color (y color) selected from the remaining colors excluding x color among red (R), green (G), and blue (B); (v) performing (b) to (e) to form a light-emitting layer corresponding to the remaining color (z color) excluding x color and y color among red (R), green (G), and blue (B); and (w) performing (f).

10. The method for manufacturing a light-emitting display device according to claim 7 or 9, wherein the resist layer used to form the resist pattern is thermally crosslinked by pre-baking, and the crosslinked structure is dissociated by light irradiation.

11. The method for manufacturing a light-emitting display device according to claim 7 or 9, wherein the peeling is performed by using a solvent or a mechanical peeling means.

12. The method for producing a light-emitting display device according to claim 11, wherein the peeling is performed using a mechanical peeling means.

13. The method for producing a light-emitting display device according to claim 12, wherein the mechanical peeling is performed by using an adhesive or an adhesive film.

14. The method for manufacturing a light-emitting display device according to claim 7 or 9, wherein the light-emitting display device is a quantum dot EL device or an organic EL device.

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