Optoelectronic component and method for producing an optoelectronic component

Abstract

The invention relates to an optoelectronic component having the following features: - a radiation-emitting semiconductor chip (1) which emits electromagnetic radiation from an emission surface (2) during operation; - at least partially diffusely reflective potting (21) which laterally embeds the radiation-emitting semiconductor chip (1) and directly adjoins a radiation exit surface (11) of the optoelectronic component. At least part of an upper main surface (23) of the diffusely reflective potting (21) has a vertical distance (Dv) from the radiation exit surface (11) of the optoelectronic component. The diffusely reflective potting (21) has a first step (22) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23). The invention further relates to a method for producing an optoelectronic component.

Description

[0001] Description

[0002] OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

[0003] An optoelectronic component and a method for producing an optoelectronic component are specified.

[0004] The aim is to provide an improved optoelectronic component. In particular, an optoelectronic component with small dimensions and / or a reliably encapsulated bonding wire is to be provided. Furthermore, a method for producing an improved optoelectronic component, in particular with small dimensions and / or a reliably encapsulated bonding wire, is to be provided.

[0005] These objects are achieved by an optoelectronic component having the features of patent claim 1 and by a method having the steps of patent claim 17.

[0006] Advantageous embodiments and further developments of the optoelectronic component and of the method for producing an optoelectronic component are specified in the respective dependent claims.

[0007] According to one embodiment, the optoelectronic component comprises a radiation-emitting semiconductor chip which, during operation, emits electromagnetic radiation from an emission surface. In particular, the radiation-emitting semiconductor chip, during operation, emits electromagnetic radiation of a first wavelength range. For example, the radiation-emitting semiconductor chip has an epitaxial semiconductor layer sequence which comprises a semiconductor material or consists of a semiconductor material. In particular, the epitaxial semiconductor layer sequence has an active zone in which the electromagnetic radiation of the first wavelength range is generated during operation.

[0008] In particular, the radiation-emitting semiconductor chip has a first main surface and a second main surface opposite the first main surface, which are perpendicular to a stacking direction of the epitaxial semiconductor layer sequence. The first main surface of the radiation-emitting semiconductor chip and the second main surface of the radiation-emitting semiconductor chip are connected to one another by a lateral surface that runs along the stacking direction of the epitaxial semiconductor layer sequence. A lateral direction extends perpendicular to the stacking direction and parallel to the first main surface and the second main surface.

[0009] According to a further embodiment, the optoelectronic component comprises an at least partially diffusely reflecting encapsulation that laterally embeds the radiation-emitting semiconductor chip and directly adjoins a radiation exit surface of the optoelectronic component. In particular, the diffusely reflecting encapsulation directly adjoins the side surface of the radiation-emitting semiconductor chip and preferably completely covers it. For example, the first main surface and / or the second main surface of the radiation-emitting semiconductor chip is completely free of the diffusely reflecting encapsulation.

[0010] The diffusely reflecting encapsulation is designed to be fully or partially diffusely reflective. In particular, the diffusely reflecting encapsulation is designed to be fully or partially diffusely reflective for electromagnetic radiation from the radiation-emitting semiconductor chip. For example, the diffusely reflecting encapsulation appears white in daylight. For example, the encapsulation is formed from a potting compound into which diffusely reflecting particles are incorporated. For example, the diffusely reflecting particles are TiCp particles. A silicone material and / or an epoxy material, for example, is suitable as a potting compound for the diffusely reflecting encapsulation.

[0011] According to a further embodiment of the optoelectronic component, at least a portion of an upper main surface of the diffusely reflecting encapsulation is vertically spaced from the radiation exit surface of the optoelectronic component. In particular, this spaced-apart portion of the upper main surface of the diffusely reflecting encapsulation runs along the first main surface of the radiation-emitting semiconductor chip, i.e., along the lateral direction. In other words, at least a portion of the upper main surface of the diffusely reflecting encapsulation is arranged along the stacking direction at a distance from the radiation exit surface of the optoelectronic component.

[0012] According to a further embodiment of the optoelectronic

[0013] Component, the diffusely reflecting encapsulation has a first step between the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation. For example, the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation are connected by a side surface of the first step.

[0014] For example, the vertical distance has a value between 0 micrometers and 100 micrometers, or between 20 micrometers and 60 micrometers. Furthermore, it is possible for the radiation exit surface of the optoelectronic component to be arranged at a horizontal distance from the side surface of the first stage in the lateral direction. In particular, the horizontal distance is not greater than one millimeter.

[0015] The optoelectronic component comprises in particular:

[0016] - the radiation-emitting semiconductor chip, which emits electromagnetic radiation from the emission surface during operation,

[0017] - the at least partially diffusely reflecting encapsulation, which laterally embeds the radiation-emitting semiconductor chip and directly adjoins the radiation exit surface of the optoelectronic component, wherein

[0018] - at least a part of the upper main surface of the diffusely reflecting encapsulation has the vertical distance to the radiation exit surface of the optoelectronic component,

[0019] - the diffusely reflecting encapsulation between the radiation exit surface of the optoelectronic component and the upper main surface has the first step. According to one embodiment, the optoelectronic component comprises a conversion element. The conversion element is designed in particular to at least partially convert electromagnetic radiation of the first wavelength range, which is emitted by the radiation-emitting semiconductor chip from the emission surface during operation, into electromagnetic radiation of a second wavelength range. In particular, the conversion element makes it possible to provide an optoelectronic component which emits white light, which is formed, for example, from unconverted electromagnetic radiation of the first wavelength range and converted radiation of the second wavelength range.

[0020] For example, the conversion element is a conversion plate which has a comparatively homogeneous thickness along a main extension plane. For example, the thickness of the conversion plate does not fluctuate by more than a value between 5 micrometers and 20 micrometers inclusive around an average value. For example, the conversion plate is applied to the emission surface of the radiation-emitting semiconductor chip and covers it partially or completely. For example, the conversion plate leaves a first electrical contact of the radiation-emitting semiconductor chip completely exposed. Side surfaces of the conversion plate can be covered with a specularly reflecting layer, for example a DBR (short for Distributed Bragg Reflector).

[0021] In particular, the specularly reflecting layer is designed to be specularly reflecting for electromagnetic radiation of the first and / or second wavelength range. For example, the conversion element comprises a polymeric matrix material, such as a silicone, a polysiloxane, and / or an epoxy, into which phosphor particles are incorporated. It is also possible for the conversion material to comprise a ceramic material or to be formed from a ceramic material.

[0022] According to a further embodiment of the optoelectronic component, the radiation exit surface of the optoelectronic component is formed by a part of a surface of the conversion element. For example, the radiation exit surface of the optoelectronic component is formed by a main surface of a conversion plate.

[0023] If the radiation exit surface of the optoelectronic component is formed by a portion of the surface of the conversion element, the diffusely reflecting encapsulation preferably directly borders the conversion element and embeds it. For example, the diffusely reflecting encapsulation directly borders a main surface of the conversion plate.

[0024] According to a further embodiment of the optoelectronic component, its radiation exit surface is formed by at least a portion of the emission surface of the radiation-emitting semiconductor chip. In this embodiment, the optoelectronic component is, in particular, free of a conversion element.

[0025] For example, the radiation exit surface is formed completely by the emission surface of the radiation-emitting semiconductor chip. According to a further embodiment of the optoelectronic component, the first stage of the diffusely reflecting encapsulation between the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation has a side surface which has an angle of between 0° and 90° inclusive with the stacking direction of the epitaxial semiconductor layer sequence. For example, the side surface of the first stage is oblique. In other words, the side surface of the first stage encloses, for example, an acute angle with the stacking direction of the epitaxial semiconductor layer sequence of the radiation-emitting semiconductor chip. For example, the acute angle has a value of between 10° and 80° inclusive.For example, the first stage has a radius of curvature between 30 micrometers and 200 micrometers inclusive.

[0026] According to a further embodiment of the optoelectronic component, the side surface of the first stage of the diffusely reflecting encapsulation between the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation is designed to be absorbent. In particular, the side surface of the first stage is designed to be absorbent for the electromagnetic radiation of the first wavelength range and / or the second wavelength range. For example, the side surface of the first stage of the diffusely reflecting encapsulation absorbs daylight completely or partially. In particular, the side surface of the first stage of the diffusely reflecting encapsulation is designed to be black. In other words, the side surface of the first stage is designed to be black, while the rest of the first stage and in particular a volume region of the first stage is designed to be white.

[0027] According to a further embodiment of the optoelectronic component, a bonding wire for electrically contacting the radiation-emitting semiconductor chip is at least partially embedded in the first stage of the diffusely reflecting encapsulation. For example, the radiation-emitting semiconductor chip has a first electrical contact on its first main surface, which can be electrically contacted with the bonding wire. The bonding wire extends from the first electrical contact, for example, to a connection point of a carrier of the optoelectronic component. In this case, the bonding wire has, for example, a loop that extends in the stacking direction over the radiation exit surface of the optoelectronic component and reduces the risk of the bonding wire tearing off. In particular, the loop of the bonding wire is wholly or partially embedded in the first stage of the diffusely reflecting encapsulation.For example, the bonding wire contains gold or is made of gold. Furthermore, the bonding wire thickness is, for example, between 12 micrometers and 38 micrometers.

[0028] One idea of ​​the present application is to provide the first stage to protect the bond wire by means of the diffusely reflecting encapsulation. If the optoelectronic component comprises a conversion element, this can moreover be made comparatively thin due to the first stage of the diffusely reflecting encapsulation, since it does not have to compensate for the height of the loop of the bond wire. This increases the efficiency of the optoelectronic component while at the same time maintaining a low height. Furthermore, the thickness of the radiation-emitting semiconductor chip can also be selected variably, since this no longer has to serve as a buffer for the loop of the bond wire.

[0029] According to a further embodiment of the optoelectronic component, an electrical contact of the radiation-emitting semiconductor chip, in particular the first electrical contact, is embedded in the diffusely reflecting potting. For example, the electrical contact, in particular the first electrical contact, is completely embedded in the diffusely reflecting potting. In particular, the electrical contact is embedded, preferably completely, in the first stage of the diffusely reflecting potting. If the electrical contact is provided with a bonding wire, the electrical contact and the bonding wire are in particular completely embedded in the diffusely reflecting potting, for example in its first stage. In this way, the risk of the bonding wire tearing off can be further reduced.

[0030] In particular, in the present optoelectronic component, a topography of the upper main surface of the diffusely reflecting encapsulation follows a height difference between the radiation exit surface of the optoelectronic component, which must be kept free, and the bonding wire. This allows further degrees of freedom in the design of the optoelectronic component and in particular in the selection of the thickness of the conversion element, as already described. According to one embodiment of the optoelectronic component, the side surface of the first stage is reflective. The side surface of the first stage can thus generate reflections and direct electromagnetic radiation emitted from the radiation exit surface forward.

[0031] According to a further embodiment, the optoelectronic component has two or more radiation-emitting semiconductor chips arranged in a row along a main extension direction of the first stage. For example, the two or more radiation-emitting semiconductor chips are of identical design. It is also possible for the radiation-emitting semiconductor chips of an optoelectronic component to be different from one another. For example, the two or more radiation-emitting semiconductor chips emit electromagnetic radiation of different wavelengths and thus light of different colors. All features and embodiments described here in connection with a radiation-emitting semiconductor chip can be implemented in some or all of the radiation-emitting semiconductor chips of the optoelectronic component.

[0032] For example, the emission surfaces of the radiation-emitting semiconductor chip are rectangular or square in plan view and arranged such that the edges of the emission surfaces extend along a common straight line. In this case, the first stage is arranged, in particular, along the common straight line. In other words, the common straight line and the main extension direction of the first stage preferably extend parallel.

[0033] According to a further embodiment, the optoelectronic component comprises four or more radiation-emitting semiconductor chips arranged in two rows along the main extension direction of the first stage. For example, the four or more radiation-emitting semiconductor chips are of identical design. It is also possible for the radiation-emitting semiconductor chips of an optoelectronic component to be different from one another. For example, the four or more radiation-emitting semiconductor chips emit electromagnetic radiation of different wavelengths and thus light of different colors.

[0034] According to a further embodiment of the optoelectronic component, the diffusely reflecting encapsulation has a second step between the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation. For example, the second step also has a main extension direction that preferably runs parallel to the main extension direction of the first step. In particular, the first step and the second step form a partially open cavity. For example, the radiation exit surface of the optoelectronic component is arranged between the first step and the second step of the diffusely reflecting encapsulation, in particular on a bottom surface of the partially open cavity. In particular, the radiation-emitting semiconductor chip is arranged between the first step and the second step.If the optoelectronic component comprises more than two radiation-emitting semiconductor chips, these are also arranged in particular between the first stage and the second stage.

[0035] In particular, all features and configurations disclosed in connection with the first stage can also be implemented in the second stage, and vice versa. In particular, the second stage has a side surface which is arranged between the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation and, in particular, connects the radiation exit surface of the optoelectronic component and the upper main surface of the diffusely reflecting encapsulation to one another. In particular, all features and configurations disclosed in connection with the side surface of the first stage can also be implemented in the side surface of the second stage, and vice versa.

[0036] According to a further embodiment of the optoelectronic component, the diffusely reflective encapsulation has a third step between the upper main surface and a side surface of the optoelectronic component. In other words, the diffusely reflective encapsulation is beveled on a side surface of the optoelectronic component. In particular, the third step extends from the upper main surface of the diffusely reflective encapsulation along the side surface of the optoelectronic component.

[0037] According to a further embodiment, the optoelectronic component has an alignment mark in the upper main surface of the diffusely reflecting encapsulation. For example, the alignment mark is formed as a recess in the upper main surface of the diffusely reflecting encapsulation. For example, the recess has a cross-sectional area that decreases starting from the upper main surface. For example, the alignment mark serves to simplify the mounting of an optical element on the diffusely reflecting encapsulation.

[0038] According to a further embodiment of the optoelectronic component, a wedge-shaped filler element is arranged on a side surface of the radiation-emitting semiconductor chip. For example, the wedge-shaped filler element has an inclined side surface. In particular, a cross-sectional area of ​​the wedge-shaped filler element increases towards the emission surface of the radiation-emitting semiconductor chip. For example, the wedge-shaped filler element is transparent to the electromagnetic radiation of the radiation-emitting semiconductor chip and / or to the converted electromagnetic radiation of the conversion element. For example, the wedge-shaped filler element comprises a transparent resin and / or a transparent adhesive or is formed from one of these materials.

[0039] In this embodiment of the optoelectronic component, the radiation-emitting semiconductor chip is in particular a volume emitter. The volume emitter has in particular a substrate on which the epitaxial semiconductor layer sequence is applied and / or grown epitaxially, and which is transparent to electromagnetic radiation from the radiation-emitting semiconductor chip. In this case, in addition to the first main surface of the radiation-emitting semiconductor chip, the side surface of the radiation-emitting semiconductor chip is also part of the emission surface of the radiation-emitting semiconductor chip. The wedge-shaped filling element increases the efficiency of the optoelectronic component and directs electromagnetic radiation from the radiation-emitting semiconductor chip towards the radiation exit surface of the optoelectronic component.

[0040] If the optoelectronic component comprises a wedge-shaped filling element, it preferably also has a conversion element which covers the wedge-shaped filling element, preferably completely.

[0041] According to a further embodiment, the optoelectronic component is free of a preformed housing. In particular, the diffusely reflective encapsulation stabilizes the optoelectronic component. For example, the optoelectronic component is mechanically stabilized solely by the diffusely reflective encapsulation. For example, side surfaces of the optoelectronic component are formed by the diffusely reflective encapsulation.

[0042] The optoelectronic component is particularly suitable as a light source in a spotlight. If the optoelectronic component has a plurality of radiation-emitting semiconductor chips, their emission surfaces or conversion elements, which are applied to their emission surfaces and separated from one another by the diffusely reflecting encapsulation, can serve as pixels. Furthermore, it is also possible for the optoelectronic component to serve as a radiation source in a lighting element. The lighting element is suitable, for example, for stage lighting. For example, in addition to the optoelectronic component as a light source, the lighting element has a structured light aperture for shaping the emitted electromagnetic radiation.

[0043] The optoelectronic component can be manufactured, for example, using the method described below. All features and embodiments described herein in connection with the optoelectronic component can also be implemented using the method, and vice versa.

[0044] According to the method for producing an optoelectronic component, a radiation-emitting semiconductor chip is provided. For example, the radiation-emitting semiconductor chip is provided on a carrier. For example, the carrier has at least two electrical connection points for electrically contacting the radiation-emitting semiconductor chip. The carrier can, for example, have a ceramic, such as an Al2O3 ceramic, a lead frame, and / or a printed circuit board (PCB for short).

[0045] According to a further embodiment of the method, the radiation-emitting semiconductor chip is embedded laterally in an at least partially diffusely reflecting encapsulation by means of transfer molding. For example, the transfer molding is foil-assisted transfer molding and / or an exposed die molding process.

[0046] According to one embodiment of the method, the diffusely reflecting encapsulation directly borders on a radiation exit surface of the optoelectronic component.

[0047] According to a further embodiment of the method, at least a part of an upper main surface of the diffusely reflecting encapsulation has a vertical distance from the radiation exit surface of the optoelectronic component.

[0048] According to a further embodiment of the method, the diffusely reflecting encapsulation has a first step between the radiation exit surface of the optoelectronic component and the upper main surface.

[0049] In particular, the method for producing the optoelectronic component comprises the following steps:

[0050] - Providing the radiation-emitting semiconductor chip,

[0051] - lateral embedding of the radiation-emitting semiconductor chip into the at least partially dif fus reflecting encapsulation by means of transfer molding, wherein

[0052] - the dif fus reflecting encapsulation is directly adjacent to the radiation exit surface of the optoelectronic component,

[0053] - at least a part of the upper main surface of the dif fus reflecting encapsulation has the vertical distance from the radiation exit surface of the optoelectronic component, and - the dif fus reflecting encapsulation has the first step between the radiation exit surface of the optoelectronic component and the upper main surface.

[0054] According to a further embodiment of the method, a conversion element is applied to an emission surface of the radiation-emitting semiconductor chip after embedding the radiation-emitting semiconductor chip in the diffusely reflecting encapsulation by one of the following methods: spraying, doctor blade coating, jetting, printing. In other words, the conversion element is arranged in the optoelectronic component only after embedding the radiation-emitting semiconductor chip in the diffusely reflecting encapsulation. It is also possible for the conversion elements to be placed individually onto the radiation-emitting semiconductor chips after embedding in the diffusely reflecting encapsulation, for example using a pick-and-place method.

[0055] According to a further embodiment of the method, the radiation-emitting semiconductor chip is provided with a conversion element. In other words, it is also possible for the radiation-emitting semiconductor chips to already be provided with conversion elements before they are laterally embedded in the diffusely reflecting encapsulation.

[0056] Further advantageous embodiments and developments of the optoelectronic component and of the method for producing an optoelectronic component will become apparent from the exemplary embodiments described below in conjunction with the figures. Figures 1 to 3 show schematic representations of an optoelectronic component according to an exemplary embodiment.

[0057] Figures 4 to 6 show schematic representations of an optoelectronic component according to a further embodiment.

[0058] Figures 7 to 10 show schematic sectional views of optoelectronic components according to various embodiments.

[0059] Figures 11 to 13 show schematic representations of an optoelectronic component according to a further embodiment.

[0060] Figures 14 to 19 show schematic sectional views of optoelectronic components according to various embodiments.

[0061] Figures 20 and 21 show schematic representations of an optoelectronic component according to a further embodiment.

[0062] Figures 22 and 23 show schematic representations of an optoelectronic component according to a further embodiment.

[0063] Figure 24 shows a flowchart of a method for producing an optoelectronic component according to an embodiment. Figures 25 to 27 show schematic representations of stages of the method for producing an optoelectronic component according to the embodiment of Figure 24.

[0064] Figures 28 and 29 show schematic representations of an optoelectronic component according to a further embodiment.

[0065] Identical, similar, or functionally identical elements are provided with the same reference symbols in the figures. The figures and the relative sizes of the elements shown in the figures are not to scale. Rather, individual elements, particularly layer thicknesses, may be exaggerated for clarity and / or clarity.

[0066] The optoelectronic component according to the embodiment of Figures 1 to 3 has a radiation-emitting semiconductor chip 1 which, during operation, emits electromagnetic radiation of a first wavelength range from an emission surface 2.

[0067] The radiation-emitting semiconductor chip 1 has a first main surface 3 and a second main surface 4 , which are connected to one another by a side surface 5 of the radiation-emitting semiconductor chip 1 . In particular, the radiation-emitting semiconductor chip 1 has an epitaxial semiconductor layer sequence 6 with an active zone 7 , wherein the epitaxial semiconductor layer sequence 6 is arranged on a growth substrate 8 in a stacking direction R shas grown epitaxially. Electromagnetic radiation is generated in the active zone 6 during operation of the radiation-emitting semiconductor chip 1. The emission surface 2 of the radiation-emitting semiconductor chip 1 is in this case part of the first main surface 3.

[0068] The optoelectronic component further comprises a conversion element 9, which is applied to the emission surface 2 of the radiation-emitting semiconductor chip 1. The conversion element 9 is embodied here as a conversion plate 10 with a largely homogeneous thickness. The conversion element 9 is formed, for example, from a matrix material such as silicone or polysiloxane, into which phosphor particles are introduced. The conversion plate 10 can also be a ceramic plate that comprises ceramic phosphor particles or is formed from ceramic phosphor particles.

[0069] The phosphor particles convert the electromagnetic radiation of the first wavelength range, which the radiation-emitting semiconductor chip 1 emits from its emission surface 2, into electromagnetic radiation of a second wavelength range that differs from the first wavelength range. A radiation exit surface 11 of the optoelectronic component is formed in the present case by a first main surface of the conversion plate 10, which faces away from the emission surface 2 of the radiation-emitting semiconductor chip 1.

[0070] Furthermore, a first electrical contact 12, to which a bonding wire 13 is attached, is arranged on the first main surface 3 of the radiation-emitting semiconductor chip 1. The radiation-emitting semiconductor chip 1 has a second electrical contact 14, which completely covers the second main surface 4 of the radiation-emitting semiconductor chip 1 (Figure 1).

[0071] The radiation-emitting semiconductor chip 1 is applied to a carrier 15, which has a ceramic base body 16, a first connection point 17, and a second connection point 18. The ceramic base body 16 comprises, for example, Al2O3 or is formed from Al2O3. For example, the first connection point 17 and the second connection point 18 comprise a metal or are formed from a metal. Furthermore, two metallic bond pads 19 are arranged on the base body 16 and are designed for external electrical contacting of the radiation-emitting semiconductor chip 1.

[0072] The first electrical contact 12 of the radiation-emitting semiconductor chip 1 is electrically conductively connected to the first connection point 17 of the carrier 15 by the bonding wire 13. In particular, the bonding wire 13 has a loop 20 (schematically indicated by the dashed circle) which extends in the stacking direction Rs extends over the radiation exit surface 11 of the optoelectronic component.

[0073] The second electrical contact 14 is applied in an electrically conductive manner to the second connection point 18 of the carrier 15, for example by soldering or gluing.

[0074] In addition, the optoelectronic component according to the embodiment of Figures 1 to 3 has a diffusely reflecting encapsulation 21 which laterally embeds the radiation-emitting semiconductor chip 1 and directly adjoins the radiation exit surface 11 of the optoelectronic component.

[0075] The diffusely reflecting encapsulation 21 comprises, for example, a encapsulation material in which diffusely reflecting particles, for example TiCp particles, are embedded. The diffusely reflecting encapsulation 21 directly borders the side surface 5 of the radiation-emitting semiconductor chip 1 and a side surface of the conversion element 9. In particular, the diffusely reflecting encapsulation 21 embeds the radiation-emitting semiconductor chip 1 and the conversion element 9 such that only the radiation exit surface 11 of the optoelectronic component, which in the present case is formed by the main surface of the conversion element 9 facing away from the radiation-emitting semiconductor chip 1, is exposed.

[0076] The diffusely reflecting encapsulation 21 in the present case has a first step 22 (schematically marked by the dashed rectangle), which is arranged between an upper main surface 23 of the diffusely reflecting encapsulation 21 and the radiation exit surface 11 of the optoelectronic component. The first step 22 has an inclined side surface 24, which connects the radiation exit surface 11 of the optoelectronic component to a part of the upper main surface 23. In particular, the part of the upper main surface 23 of the diffusely reflecting encapsulation 21, which is connected to the radiation exit surface 11 via the side surface 24 of the first step 22, has a vertical distance D vto the radiation exit surface 11 of the optoelectronic component. The loop 20 of the bonding wire 13 is embedded in the first step 22 of the diffusely reflecting encapsulation 21 and is protected thereby. The first step 22 has a main extension direction that runs along an edge of the radiation exit surface 11 of the optoelectronic component (Figures 2 and 3).

[0077] The first stage 22 in the diffusely reflecting encapsulation 21 directs electromagnetic radiation emitted by the optoelectronic component from its radiation exit surface 11 in a lateral direction R L is emitted in the stacking direction R s This increases the contrast.

[0078] The optoelectronic component according to the embodiments of Figures 4 to 6 differs from the optoelectronic component according to the embodiments of Figures 1 to 3 in particular by the carrier 15 onto which the radiation-emitting semiconductor chip 1 is applied.

[0079] In the present exemplary embodiment, the carrier 15 has a lead frame 25 with two parts 25', 25'' that are spaced apart from one another (Figures 4 and 5). For example, the lead frame 25 is made of metal and has a metal core, for example made of copper, which is covered with a coating, for example an electroplated silver coating. The two separate parts 25', 25'' of the lead frame 25 are electrically insulated from one another by a molding compound 26 that embeds the lead frame 25. The molding compound 26 can be of the same type as or different from the diffusely reflecting potting compound 21.The radiation-emitting semiconductor chip 1 is applied with its rear-side second electrical contact 14 to a part 25 ' of the lead frame 25 in an electrically conductive manner, while the bonding wire 13, which electrically contacts the front-side first electrical contact 12 of the radiation-emitting semiconductor chip 1, is electrically conductively connected to the other part 25 '' of the lead frame 25.

[0080] As Figure 5 shows, an ESD protection diode 27 is also applied to the part 25 '' of the lead frame 25 with which the bonding wire 13 is provided.

[0081] Figure 6 again shows the radiation-emitting semiconductor chip 1 embedded with the diffusely reflecting encapsulation 21, which has a first step 22 which runs along an edge of the radiation exit surface 11 of the optoelectronic component.

[0082] The optoelectronic component according to the embodiment of Figure 7, in contrast to the optoelectronic component according to Figures 4 to 6, has a black molding compound 28, for example based on epoxy, in which the lead frame 25 is embedded.

[0083] In contrast to the optoelectronic components already described, the optoelectronic component according to the exemplary embodiment of Figure 8 has a carrier 15 designed as a printed circuit board (PCB) 29. The carrier 15 has two metallic connection points 17, 18 for electrically contacting the radiation-emitting semiconductor chip 1, as well as two bond pads 19, which are configured, for example, for soldering the optoelectronic component to another element.

[0084] The radiation-emitting semiconductor chip 1 is applied, for example, by soldering or gluing, to one of the electrical connection points 17 of the carrier 15 and is electrically conductively connected thereto.

[0085] In contrast to the optoelectronic component according to Figures 1 to 3, the optoelectronic component according to the exemplary embodiment of Figure 9 has a first step 22 whose side surface 24 is black. Such a locally blackened side surface 24 of the step 22 of the diffusely reflecting encapsulation 21 can be achieved, for example, with the aid of a laser.

[0086] In contrast to the optoelectronic component according to the embodiment of Figures 4 to 6, the optoelectronic component according to the embodiment of Figures 10 has a third step 30 in the diffusely reflecting encapsulation 21, which extends from the upper main surface 23 of the diffusely reflecting encapsulation 21. In other words, the optoelectronic component according to Figure 10 has a beveled side surface in the region of the bonding wire 13.

[0087] The optoelectronic component according to the embodiment of Figures 11 to 13, in contrast to the optoelectronic component according to Figures 1 to 3, has an alignment mark 31 in an upper main surface 23 of the diffusely reflecting encapsulation 21. In particular, the alignment mark 31 is introduced into the part of the upper main surface 23 of the diffusely reflecting encapsulation which has a vertical distance D vto a radiation exit surface 11 of the optoelectronic component.

[0088] In the present case, the alignment mark 31 has a triangular cross-sectional area that tapers starting from the upper main surface 23. In particular, the alignment mark 31 is designed as a trench that extends along the first step 22 into the diffusely reflecting potting 21 (Figures 12 and 13).

[0089] With the alignment mark 31, for example, an optical element (not shown) can be easily aligned and fixed on the optoelectronic component. The alignment mark 31 serves, in particular, to hold the optical element in the correct position.

[0090] In contrast to the optoelectronic component according to Figures 1 to 3, the optoelectronic component according to the embodiment of Figure 14 has a second step 32 in the diffusely reflecting encapsulation. The second step 32 of the diffusely reflecting encapsulation 21 directly borders a radiation exit surface 11 of the optoelectronic component, which in the present case is formed by a first main surface of a conversion element 9 facing away from the radiation-emitting semiconductor chip 1. In particular, the second step 32 runs parallel to an edge of the radiation-emitting semiconductor chip 1 and thus to an edge of the radiation exit surface 11 and to an edge of the conversion element 9. The optoelectronic component according to the embodiment of Figure 15 is, in contrast to the optoelectronic component according to Figure 14, free of a conversion element 9.In this optoelectronic component, the radiation exit surface 11 is formed by an emission surface 2 of the radiation-emitting semiconductor chip.

[0091] 1 formed .

[0092] The optoelectronic component according to the embodiment of Figure 16 differs from the optoelectronic component according to Figure 15 in the design of the radiation-emitting semiconductor chip 1. The radiation-emitting semiconductor chip 1 is a volume emitter.

[0093] In contrast to the radiation-emitting semiconductor chip of the optoelectronic component according to the exemplary embodiment of Figures 1 to 3, a first main surface 3 of the radiation-emitting semiconductor chip is free of a first electrical contact 12. Rather, both electrical contacts 12, 14 are arranged on a second main surface 4 of the radiation-emitting semiconductor chip 1 and are electrically conductively connected to electrical connection points 17, 18 of the carrier 15. The emission surface

[0094] 2 of the radiation-emitting semiconductor chip 1 of the optoelectronic component of Figure 16 is completely formed by the first main surface 3 of the radiation-emitting semiconductor chip 1 and is not reduced in size by a first electrical contact 12.

[0095] A di f fus reflecting casting 21 borders the

[0096] Emission area 2 of the radiation-emitting semiconductor chip

[0097] 1 , which forms the radiation exit surface 11 of the optoelectronic component. In particular, a side surface 24 of a first stage 22 and a side surface 33 of a second stage 32 of the diffusely reflecting encapsulation 21 directly adjoin and connect the radiation exit surface 11 to an upper main surface 23 of the diffusely reflecting encapsulation 21.

[0098] In contrast to the optoelectronic component according to Figure 16, the optoelectronic component according to the exemplary embodiment of Figure 17 has a conversion element 9 that is applied over the entire area of ​​the first main surface 3 of the radiation-emitting semiconductor chip 1 and completely covers the emission surface 2 of the radiation-emitting semiconductor chip 1. The conversion element 9 forms a radiation exit surface 11 of the optoelectronic component.

[0099] 17, the optoelectronic component according to the embodiment of Figure 18 has a conversion element 9 which is applied not only to the emission surface 2 of the radiation-emitting semiconductor chip, but also to the side surface 24 of the first stage 22 and the side surface 33 of the second stage 32, which connect the radiation exit surface 11 of the optoelectronic component to the upper main surface 23 of the diffusely reflecting encapsulation 21. In particular, the conversion element 9 completely covers the side surface 24 of the first stage 22 and the side surface 33 of the second stage 32. For example, the conversion element 9 is applied after the radiation-emitting semiconductor chip 1 has been embedded in the diffusely reflecting encapsulation 21, for example by spray coating.In this way, the costs for the production of the conversion element 9 can be kept low.

[0100] In contrast to the optoelectronic component according to the embodiment of Figure 17, the optoelectronic component according to the embodiment of Figure 19 has wedge-shaped fill elements arranged on a side surface of the radiation-emitting semiconductor chip. In particular, a cross-sectional area of ​​the wedge-shaped fill elements 34 increases from the carrier 15 toward a radiation exit surface 11 of the optoelectronic component. In the present case, the conversion element 9 completely covers not only the emission surface 2 of the radiation-emitting semiconductor chip 1, but also the wedge-shaped fill elements 34.The wedge-shaped filling elements 34 direct the electromagnetic radiation of the first wavelength range, which is emitted from the side surface 5 of the radiation-emitting semiconductor chip 1, towards the radiation exit surface 11 of the optoelectronic component, so that its efficiency is increased.

[0101] In contrast to the optoelectronic component according to the embodiment of Figures 1 to 3, the optoelectronic component according to the embodiment of Figures 20 and 21 has a plurality of, in this case three, radiation-emitting semiconductor chips 1 which are arranged in a row.

[0102] In the present case, the radiation-emitting semiconductor chips 1 are of identical design, as already described, for example, in connection with Figures 1 to 3. Each radiation-emitting semiconductor chip 1 has a conversion element 9 on an emission surface 2. The radiation exit surface 11 of the optoelectronic component is formed by the conversion elements 9. In other words, the optoelectronic component emits electromagnetic radiation from the conversion elements 9. This is electromagnetic radiation that is composed of converted radiation from the conversion elements 9 and unconverted radiation from the radiation-emitting semiconductor chips 1. In particular, the present optoelectronic component is a pixelated optoelectronic component.

[0103] In particular, the radiation-emitting semiconductor chips are arranged along a first step 22 of a dif fus reflecting encapsulation 21.

[0104] The optoelectronic component according to the embodiment of Figures 20 and 21 has a diffusely reflecting encapsulation 21, in which all radiation-emitting semiconductor chips 1 are embedded. In particular, the diffusely reflecting encapsulation 21 directly borders on side surfaces 5 of the radiation-emitting semiconductor chips 1 and leaves a main surface of the conversion elements 9, which are applied to emission surfaces 2 of the radiation-emitting semiconductor chips 1, free. The diffusely reflecting encapsulation 21 has an upper main surface 23, which is at a vertical distance D vto the radiation exit surface 11 of the optoelectronic component. In particular, the dif fus reflecting encapsulation 21 has a first step 22 which comprises a side surface 24 which connects an upper main surface 23 of the dif fus reflecting encapsulation 21 with the

[0105] Radiation exit surface 11 connects.

[0106] The radiation-emitting semiconductor chips 1 are each electrically connected to a connection point 17 of the carrier 15 by means of a bonding wire 12. In other words, the optoelectronic component has three bonding wires 13, each of which electrically contacts a front-side first contact 12 of a radiation-emitting semiconductor chip 1. All bonding wires 13 of the optoelectronic component are embedded in the first stage 22 of the diffusely reflecting encapsulation 21 and provide space for a loop 20 of the bonding wire 13.

[0107] The optoelectronic component according to the embodiment of Figures 22 and 23 has, in contrast to the optoelectronic component according to Figures 20 and 21, a second row of radiation-emitting semiconductor chips 1.

[0108] In particular, the optoelectronic component comprises two rows of radiation-emitting semiconductor chips 2, whose emission surfaces 3 are each provided with a conversion element 9. The radiation-emitting semiconductor chips 1 are arranged in two parallel rows, each comprising three radiation-emitting semiconductor chips 1. In other words, the radiation-emitting semiconductor chips 1 are arranged in rows and columns.

[0109] The dif fus reflective encapsulation 21 of the optoelectronic component according to Figures 22 and 23 has a second step 32 in an upper main surface 23. The second step 32, like the first step 22, has an inclined side surface 33 which connects the radiation exit surface 11 of the optoelectronic component to the upper main surface 23 of the dif fus reflective encapsulation 21.

[0110] The first stage 22 and the second stage 32 of the dif fus reflecting encapsulation 21 run parallel to each other and parallel to the rows in which the radiation-emitting semiconductor chips 1 are arranged.

[0111] The second stage 32 of the di f fus reflective encapsulation 21 embeds, like the first stage 22 of the di f fus reflective encapsulation 21, bonding wires 13 which electrically contact the radiation-emitting semiconductor chips 1 of a row.

[0112] In the method according to the embodiment of Figure 24, a radiation-emitting semiconductor chip 1 is provided in a first step S1. For example, the radiation-emitting semiconductor chip 1 is arranged on a carrier 15, as already described in connection with the other embodiments.

[0113] In a second step S2, the radiation-emitting semiconductor chip 1 is embedded laterally by means of transfer molding into a diffusely reflecting encapsulation 21. The process stage achieved after step S2 is schematically illustrated in Figure 25.

[0114] According to Figure 25, a radiation-emitting semiconductor chip 1 is arranged on a part 25' of a lead frame 25 and is electrically conductively connected to another part 25'' of the lead frame 25 by a bonding wire 13. Furthermore, the radiation-emitting semiconductor chip 1 and the lead frame 25 are embedded in a diffusely reflecting potting 21 which has a first step 22 and a second step 32. The bonding wire 13 for electrically contacting the radiation-emitting semiconductor chip 1 is embedded in the first step 22 of the diffusely reflecting potting 21.

[0115] A side surface 24 of the first stage 22 directly adjoins an emission surface 2 of the radiation-emitting semiconductor chip 1. Likewise, a side surface 33 of the second stage 32 directly adjoins the emission surface 2 of the radiation-emitting semiconductor chip 1. Furthermore, the side surface 24 of the first stage 22 and the side surface 33 of the second stage 32 connect the emission surface 2 of the radiation-emitting semiconductor chip 1 to an upper main surface 23 of the diffusely reflecting encapsulation 21.

[0116] In a next step S3, a conversion element 9 is applied to the exposed emission surface 2 of the radiation-emitting semiconductor chip 1 between the side surface 24 of the first stage 22 and the side surface 33 of the second stage 32 of the diffusely reflecting encapsulation 21 (Figure 26). For example, first a liquid matrix material, such as silicone, is provided with phosphor particles and filled, for example by jetting or dispensing, into a partially open cavity 35 which is produced by the side surface 24 of the first stage 22 and the side surface 33 of the second stage 32. In particular, the phosphor particles can sediment in the liquid matrix material. The liquid matrix material is then cured with the phosphor particles to form a conversion element 9. In a next step S4, an optical element 36, for example a lens, is applied to the conversion element 9.For example, a liquid transparent resin is applied to the conversion element 9, for example by dispensing. Edges of the cavity 35 can serve as a stop edge for the liquid transparent resin. The liquid transparent resin is then cured to form the optical element 36. Alternatively, the optical element 36 can also be applied to the conversion element 9 by molding the transparent resin in the form of a lens (Figure 27).

[0117] The optoelectronic components described so far have partially open cavities 35 with a rectangular or square basic geometry, which are defined by the first step 22 and / or the second step 32. However, other basic geometries of the cavity 35 are also possible, for example, round or polygonal. Such optoelectronic components can be used, in particular, as light sources in stage lighting.

[0118] An optoelectronic component with a cavity 35 having a round basic geometry is shown, for example, in Figure 28. In particular, the cavity 35 is closed off in the diffusely reflecting encapsulation 21. At a bottom surface 37 of the cavity 35, an emission surface 2 of the radiation-emitting semiconductor chip 1 is not covered by the diffusely reflecting encapsulation 21. Rather, the part of the emission surface 2 of the radiation-emitting semiconductor chip 1 that is not covered by the diffusely reflecting encapsulation 21 is provided with a conversion element 9. The conversion element 9 fills the cavity 35 in a lateral direction D Lcompletely. As shown in Figure 29, an optical element 36, for example a light guide, can be applied to the conversion element 9, for example with a round basic geometry. For this purpose, an adhesive 38 is first applied to the conversion element 9 in the cavity 35, and then the light guide is glued.

[0119] This application claims priority from German application DE 102024106534.6, the disclosure of which is hereby incorporated by reference.

[0120] The invention is not limited to the embodiments by the description. Rather, the invention encompasses any novel feature and any combination of features, including, in particular, any combination of features in the patent claims, even if this feature or combination itself is not explicitly stated in the patent claims or embodiments.

[0121] Reference symbol list

[0122] 1 radiation-emitting semiconductor chip

[0123] 2 Emission area

[0124] 3 first main surface of the radiation-emitting semiconductor chip

[0125] 4 second main surface of the radiation-emitting semiconductor chip

[0126] 5 Side surface of the radiation-emitting semiconductor chip

[0127] 6 epitaxial semiconductor layer sequence

[0128] 7 active zones

[0129] 8 Growth substrate

[0130] 9 Conversion element

[0131] 10 conversion tiles

[0132] 11 Radiation exit surface of the optoelectronic component

[0133] 12 first electrical contact

[0134] 13 Bond wire

[0135] 14 second electrical contact

[0136] 15 carriers

[0137] 16 basic bodies

[0138] 17 first junction

[0139] 18 second junction

[0140] 19 Bondpad

[0141] 20 Loop

[0142] 21 di f fus reflective casting

[0143] 22 first stage

[0144] 23 upper main surface of the di f fus reflective casting

[0145] 24 Side surface of the first step 22

[0146] 25 ladder frames

[0147] 25 ' , 25 '' part of the ladder frame

[0148] 26 molding compound

[0149] 27 ESD protection diode 28 Black molding compound

[0150] 29 printed circuit board

[0151] 30 third stage

[0152] 31 Alignment mark 32 second stage

[0153] 33 Side surface of the second stage

[0154] 34 Filling element

[0155] 35 recess

[0156] 36 optical element 37 bottom surface of the cavity

[0157] 38 adhesive

[0158] Rs Stacking direction

[0159] D v vertical distance R L lateral direction

[0160] SI , S2 , S3 , S4 process step

Claims

Patent claims 1. Optoelectronic component with: - a radiation-emitting semiconductor chip (1) which, during operation, emits electromagnetic radiation from a Emission surface (2), - an at least partially diffusely reflecting casting (21) which laterally embeds the radiation-emitting semiconductor chip (1) and directly adjoins a radiation exit surface (11) of the optoelectronic component, wherein - at least a part of an upper main surface (23) of the diffusely reflecting encapsulation (21) has a vertical distance (D v ) to the radiation exit surface (11) of the optoelectronic component, - the diffusely reflecting encapsulation (21) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23) has a first stage (22).

2. Optoelectronic component according to the preceding claim, wherein the radiation exit surface (11) of the optoelectronic component is formed by a part of the surface of a conversion element (9).

3. Optoelectronic component according to claim 1, wherein the radiation exit surface (11) of the optoelectronic component is formed by at least a part of the emission surface (2) of the radiation-emitting semiconductor chip (1).

4. Optoelectronic component according to one of the preceding claims, wherein the first stage (22) of the diffusely reflecting encapsulation (21) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23) of the diffusely reflecting encapsulation (21) has a side surface (24) which is aligned with a stacking direction (R s ) has an angle between 0° and 90° inclusive.

5. Optoelectronic component according to one of the preceding claims, wherein the first stage (22) of the diffusely reflecting encapsulation (21) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23) of the diffusely reflecting encapsulation (21) has a side surface (24) which is designed to be absorbent.

6. Optoelectronic component according to one of the preceding claims, wherein a bonding wire (13) for electrically contacting the radiation-emitting semiconductor chip (1) is at least partially embedded in the first stage (22) of the diffusely reflecting encapsulation (21).

7. Optoelectronic component according to one of the preceding claims, wherein an electrical contact (12, 14) of the radiation-emitting semiconductor chip (1) is embedded in the diffusely reflecting encapsulation (21).

8. Optoelectronic component according to one of the preceding claims, wherein the side surface (24) of the first stage (22) of the diffusely reflecting encapsulation (21) is mirror-like.

9. Optoelectronic component according to one of the preceding claims, which has two or more radiation-emitting semiconductor chips (1) arranged in a row along a main extension direction of the first stage (22).

10. Optoelectronic component according to one of the preceding claims, which has four or more radiation-emitting semiconductor chips (1) arranged in two rows along the main extension direction of the first stage (22).

11. Optoelectronic component according to one of the preceding claims, wherein the diffusely reflecting encapsulation (21) has a second step (32) between the radiation exit surface (11) of the optoelectronic component and the upper main surface (23) of the diffusely reflecting encapsulation (21).

12. Optoelectronic component according to one of the preceding claims, wherein the diffusely reflecting encapsulation (21) has a third step (30) between the upper main surface (23) and a side surface of the optoelectronic component.

13. Optoelectronic component according to one of the preceding claims, which has an alignment mark (31) in the upper main surface (23) of the diffusely reflecting encapsulation (21).

14. Optoelectronic component according to one of the preceding claims, wherein - a wedge-shaped filling element (34) is arranged on a side surface (5) of the radiation-emitting semiconductor chip (1), and - the optoelectronic component has a conversion element (9) which covers the wedge-shaped filling element (34).

15. Headlight comprising an optoelectronic component according to one of the preceding claims.

16. Lighting element comprising an optoelectronic component according to one of claims 1 to 14.

17. A method for producing an optoelectronic component comprising the following steps: - Providing a radiation-emitting semiconductor chip (1) , - lateral embedding of the radiation-emitting semiconductor chip (1) in an at least partially diffusely reflecting encapsulation (21) by means of transfer molding, wherein - the diffusely reflecting encapsulation (21) directly adjoins a radiation exit surface (11) of the optoelectronic component, - at least a part of an upper main surface (23) of the diffusely reflecting encapsulation (21) has a vertical distance (D v ) to the radiation exit surface (11) of the optoelectronic component, and - the diffusely reflecting casting (21) between the Radiation exit surface (11) of the optoelectronic component and the upper main surface (23) has a first step (22).

18. The method according to the preceding claim, wherein a conversion element (9) is applied to an emission surface (2) of the radiation-emitting semiconductor chip (1) after embedding the radiation-emitting semiconductor chip (1) by one of the following methods: spraying, doctor blade coating, jetting, printing.

19. The method according to one of claims 17 to 18, wherein the radiation-emitting semiconductor chip (1) is provided with a conversion element (9).

Images