Display substrate and temperature measurement method therefor, and display device

Abstract

A display substrate and a temperature measurement method therefor, and a display device. The display substrate comprises: a substrate, a driving signal line located on the substrate, a temperature sensor made of the same material as the driving signal line, and a measurement circuit electrically connected to the temperature sensor, wherein the resistance value of the temperature sensor is in positive correlation with the temperature value; and the measurement circuit is configured to obtain respective resistance value results of the temperature sensor at an initial temperature and a test temperature, determine, on the basis of the resistance value results, a target temperature value corresponding to the test temperature, and use the target temperature value as the current temperature value of the display substrate at the position corresponding to the temperature sensor.

Description

Display substrate, temperature detection method thereof, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a display substrate, a temperature detection method thereof, and a display device. Background Art

[0002] When testing the performance requirements of display devices, the detection of temperature changes is often considered an important part to avoid adverse effects caused by excessively high or low temperatures.

[0003] Taking the application scenario of in-vehicle display as an example, a temperature sensor can be placed on a printed circuit board (PCB) or in the back panel light bar to detect the temperature of the display device. However, since the temperature sensor is farther away from the display substrate, it is impossible to accurately detect the corresponding position. In addition, the temperature sensor used is generally a negative temperature coefficient (NTC) thermistor, which can use a numerical value to calculate the temperature of the corresponding position based on a lookup curve (i.e., a resistance value and temperature comparison table).

[0004] Summary of the Invention

[0005] The present disclosure provides a display substrate, a temperature detection method thereof, and a display device. The specific solutions are as follows:

[0006] An embodiment of the present disclosure provides a display substrate, comprising:

[0007] A substrate, a driving signal line located on the substrate, a temperature sensor provided with the same material as the driving signal line, and a detection circuit electrically connected to the temperature sensor;

[0008] In which, the resistance value of the temperature sensor is positively correlated with the temperature value, and the detection circuit is configured to obtain the resistance results of the temperature sensor at the initial temperature and the test temperature respectively, and determine the target temperature value corresponding to the test temperature based on the resistance results, and use the target temperature value as the current temperature value of the display substrate at the corresponding position of the temperature sensor.

[0009] Optionally, in the embodiment of the present disclosure, the material of the temperature sensor is Mo / Al / Mo, or Ti / Al / Ti.

[0010] Optionally, in an embodiment of the present disclosure, the temperature sensor includes a plurality of temperature units arranged in an array within the display area.

[0011] Optionally, in the embodiment of the present disclosure, it also includes a gate layer and a source-drain layer arranged in sequence away from the substrate, the temperature sensor is arranged in the same layer and material as the source-drain layer, and each of the temperature units is arranged corresponding to at least one sub-pixel in one column of the multiple sub-pixels in the display area.

[0012] Optionally, in the embodiment of the present disclosure, it also includes a gate layer and a source-drain layer arranged in sequence away from the substrate, the temperature sensor is arranged in the same layer and material as the gate layer, and each temperature unit is arranged corresponding to at least one sub-pixel in one row of multiple sub-pixels in the display area.

[0013] Optionally, in an embodiment of the present disclosure, along a first direction, the display area includes a first side and a second side arranged opposite to each other; a first part of the multiple temperature units located on the first side and a second part located on the second side are symmetrically arranged compared to the central axis of the display substrate; the direction of the central axis is parallel to a second direction intersecting with the first direction, and the first direction is parallel to the column direction or row direction of the multiple sub-pixels.

[0014] Optionally, in an embodiment of the present disclosure, it also includes a first lead respectively connected to each of the temperature units and the corresponding detection circuit in the first part, and a second lead respectively connected to each of the temperature units and the corresponding detection circuit in the second part, and the first lead and the second lead are respectively located on the same side of the display area.

[0015] Optionally, in the embodiment of the present disclosure, each of the temperature units is arranged corresponding to the sub-pixels in an area surrounded by multiple rows and multiple columns of the multiple sub-pixels.

[0016] Optionally, in an embodiment of the present disclosure, each of the temperature units includes a plurality of subunits arranged in sequence along a first direction, and two adjacent subunits are connected via a connecting portion extending along the first direction.

[0017] Optionally, in the embodiment of the present disclosure, along the first direction or a second direction intersecting with the first direction, the number of the multiple sub-units corresponding to each of the temperature units is the same.

[0018] Optionally, in an embodiment of the present disclosure, in addition to the multiple sub-units and the connecting parts, a floating connection line is also provided in the area where each temperature unit is located. The floating connection line is made of the same material as the corresponding temperature unit and is disconnected from the corresponding temperature unit.

[0019] Optionally, in an embodiment of the present disclosure, along a second direction intersecting with the first direction, the number of the plurality of sub-units corresponding to each of the temperature units tends to decrease.

[0020] Optionally, in an embodiment of the present disclosure, each of the sub-units includes a first branch, a second branch, and a third branch connected in sequence, and the first branch and the third branch are both extended along a second direction intersecting with the first direction, the second branch is extended along the first direction, and the structure surrounded by the first branch, the second branch, and the third branch is U-shaped.

[0021] Optionally, in the embodiment of the present disclosure, it also includes a pixel electrode layer and a common electrode layer arranged in sequence away from the substrate, each of the temperature units is located between the pixel electrode layer and the common electrode layer, and the orthographic projection of each of the temperature units on the substrate completely falls within the area of ​​the orthographic projection of the common electrode layer on the substrate.

[0022] Optionally, in the embodiment of the present disclosure, it also includes a plurality of data lines extending along the column direction parallel to the plurality of sub-pixels, a redundant line located between two adjacent data lines and extending along the column direction parallel to the plurality of sub-pixels, and a plurality of gate lines extending along the row direction parallel to the plurality of sub-pixels; each of the temperature units includes a first strip structure arranged corresponding to the redundant line, and a plurality of second strip structures arranged corresponding to the plurality of gate lines, and the plurality of first strip structures and the plurality of second strip structures form a mesh structure, the orthographic projection of each of the first strip structures on the substrate completely falls within the area of ​​the orthographic projection of the corresponding redundant line on the substrate, and the orthographic projection of each of the second strip structures on the substrate does not overlap with the orthographic projection of the gate line at the corresponding position on the substrate.

[0023] Optionally, in an embodiment of the present disclosure, the first strip-shaped structure and the second strip-shaped structure intersect through a hollow annular structure.

[0024] Optionally, in the embodiment of the present disclosure, the temperature sensor is located in a peripheral area arranged around the display area.

[0025] Optionally, in the embodiment of the present disclosure, a driving device electrically connected to the driving signal line and located in the binding area is further included, the temperature sensor is arranged around the driving device, and the binding area is located on one side of the display area.

[0026] Optionally, in an embodiment of the present disclosure, the detection circuit includes a bridging unit, a first amplifying unit, a first analog-to-digital conversion unit and a first processing unit; the bridging unit is electrically connected to the temperature sensor and the first amplifying unit, respectively, and the first analog-to-digital conversion unit is electrically connected to the first amplifying unit and the first processing unit, respectively; the bridging unit includes a first resistor, a second resistor and a third resistor; the input end of the first amplifying unit is electrically connected to the first node and the second node, respectively, the temperature sensor is electrically connected to the power supply end and the first node, respectively, the first resistor is electrically connected to the power supply end and the second node, respectively, the second resistor is electrically connected to the first node and the third node, respectively, the third resistor is electrically connected to the third node and the second node, respectively, and the third node is grounded.

[0027] Optionally, in an embodiment of the present disclosure, the detection circuit includes a fourth resistor, a second amplifying unit, a second analog-to-digital conversion unit and a second processing unit; the second analog-to-digital conversion unit is electrically connected to the second amplifying unit and the second processing unit, respectively; the temperature sensor is electrically connected to the fourth node and the power supply end, respectively, the fourth resistor is electrically connected to the fourth node and the ground, respectively, the fourth node is electrically connected to one of the input ends of the second amplifying unit, and the other input end of the second amplifying unit is electrically connected to the reference voltage end.

[0028] Accordingly, an embodiment of the present disclosure provides a display device, comprising:

[0029] A display substrate as described in any one of the above items, an opposite substrate arranged opposite to the display substrate, and a liquid crystal layer located between the display substrate and the opposite substrate.

[0030] Optionally, in an embodiment of the present disclosure, the opposing substrate further includes a plurality of filter portions arranged in an array, and a shading portion arranged around each of the filter portions; the orthographic projection of the temperature sensor on the substrate completely falls within the area of ​​the orthographic projection of the shading portion on the substrate.

[0031] Accordingly, an embodiment of the present disclosure provides a temperature detection method, which is applied to the display substrate as described above, and includes:

[0032] placing the display substrate at an initial temperature, and obtaining a first resistance value of the temperature sensor through the detection circuit;

[0033] obtaining a second resistance value of the temperature sensor at a test temperature through the detection circuit;

[0034] determining the temperature change according to a correspondence between the first resistance value, the second resistance value, and the temperature change;

[0035] A target temperature value corresponding to the test temperature is determined according to the initial temperature and the temperature change, and the target temperature value is used as a current temperature value of the display substrate at a position corresponding to the temperature sensor.

[0036] Optionally, in the embodiment of the present disclosure, determining the temperature change according to the correspondence between the first resistance value, the second resistance value, and the temperature change includes:

[0037] determining a resistance change of the second resistance value compared to the first resistance value;

[0038] The temperature variation is determined according to a corresponding relationship between the resistance variation and the temperature variation.

[0039] Optionally, in the embodiment of the present disclosure, determining the temperature change according to the correspondence between the first resistance value, the second resistance value, and the temperature change includes:

[0040] determining a resistance change rate of the second resistance value compared to the first resistance value;

[0041] The temperature change amount is determined according to the corresponding relationship between the resistance change rate and the temperature change amount. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] FIG1 is a schematic diagram of a lookup curve of a temperature sensor made of an NTC thermistor in the related art;

[0043] FIG2 is a schematic structural diagram of a display substrate provided in an embodiment of the present disclosure;

[0044] FIG3 is a schematic diagram of a temperature curve corresponding to a temperature sensor in a display substrate provided by an embodiment of the present disclosure;

[0045] FIG4 is a schematic diagram of a temperature curve corresponding to a temperature sensor in a display substrate provided by an embodiment of the present disclosure;

[0046] FIG5 is a schematic diagram of a cross-sectional structure of a display substrate provided in an embodiment of the present disclosure;

[0047] FIG6 is a schematic top view of a temperature unit of the temperature sensor in FIG5 ;

[0048] FIG7 is a schematic diagram of a cross-sectional structure of a display substrate provided in an embodiment of the present disclosure;

[0049] FIG8 is a schematic top view of a temperature unit of the temperature sensor in FIG7 ;

[0050] FIG9 is a schematic diagram showing one distribution of temperature sensors in a display substrate provided by an embodiment of the present disclosure;

[0051] FIG10 is a schematic diagram showing one distribution of temperature sensors in a display substrate provided by an embodiment of the present disclosure;

[0052] FIG11 is a schematic diagram showing one distribution of temperature sensors in a display substrate provided by an embodiment of the present disclosure;

[0053] FIG12 is a schematic diagram showing one distribution of temperature sensors in a display substrate provided by an embodiment of the present disclosure;

[0054] FIG13 is a schematic diagram showing one distribution of temperature sensors in a display substrate provided by an embodiment of the present disclosure;

[0055] FIG14 is a schematic structural diagram of a temperature sensor in a display substrate provided by an embodiment of the present disclosure;

[0056] FIG15 is a schematic diagram of a cross-sectional structure of a display substrate provided in an embodiment of the present disclosure;

[0057] FIG16 is a schematic top view of one embodiment of the display substrate shown in FIG15 ;

[0058] FIG17 is a schematic structural diagram of a display substrate provided in an embodiment of the present disclosure;

[0059] FIG18 is a schematic structural diagram of a display substrate provided in an embodiment of the present disclosure;

[0060] FIG19 is a schematic structural diagram of a display substrate provided in an embodiment of the present disclosure;

[0061] FIG20 is a schematic diagram of a circuit structure of a detection circuit in a display substrate provided by an embodiment of the present disclosure;

[0062] FIG21 is a schematic diagram of a circuit structure of a detection circuit in a display substrate provided by an embodiment of the present disclosure;

[0063] FIG22 is a block diagram of a circuit structure of a display substrate provided by an embodiment of the present disclosure using the temperature sensor shown in FIG9 and the detection circuit shown in FIG21 ;

[0064] FIG23 is a schematic structural diagram of a display device provided by an embodiment of the present disclosure;

[0065] FIG24 is a schematic structural diagram of a display device provided by an embodiment of the present disclosure;

[0066] FIG25 is a schematic structural diagram of a display device provided by an embodiment of the present disclosure;

[0067] FIG26 is a flow chart of a temperature detection method provided by an embodiment of the present disclosure;

[0068] FIG27 is a flow chart of one method of step S103 in FIG26 ;

[0069] FIG. 28 is a flow chart of one method of step S103 in FIG. 26 . DETAILED DESCRIPTION

[0070] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. And in the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be combined with each other. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0071] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar terms used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Inside", "outside", "upper", "lower" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0072] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present disclosure. The same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0073] In related technologies, temperature sensors made of NTC thermistors are often used for temperature detection. For example, a lookup table (i.e., a table comparing resistance and temperature) can be used, as shown in Figure 1. The corresponding temperature value is obtained by detecting the inferred resistance value. Figure 1 illustrates the lookup table curves corresponding to six different product models (1) to (6), with the horizontal axis representing temperature (°C) and the vertical axis representing resistance (KΩ). Because the temperature sensors used in each product model are farther away than the display product, accurate temperature detection at the corresponding location is not possible.

[0074] In view of this, embodiments of the present disclosure provide a display substrate, a temperature detection method thereof, and a display device, for improving the accuracy of temperature detection.

[0075] As shown in FIG2 , an embodiment of the present disclosure provides a display substrate, including:

[0076] A substrate 10, a driving signal line 20 located on the substrate 10, a temperature sensor 30 made of the same material as the driving signal line 20, and a detection circuit 40 electrically connected to the temperature sensor 30;

[0077] In which, the resistance value of the temperature sensor 30 is positively correlated with the temperature value, and the detection circuit 40 is configured to obtain the resistance results of the temperature sensor 30 at the initial temperature and the test temperature respectively, and determine the target temperature value corresponding to the test temperature based on the resistance results, and use the target temperature value as the current temperature value of the display substrate at the corresponding position of the temperature sensor 30.

[0078] In a specific implementation, the display substrate provided by the embodiment of the present disclosure includes a substrate 10, a drive signal line 20, a temperature sensor 30, and a detection circuit 40. The substrate 10 can be either a flexible substrate or a rigid substrate, without limitation. The drive signal line 20 is located on the substrate 10, and the temperature sensor 30 is configured from the same material as the drive signal line 20. In one exemplary embodiment, the drive signal line 20 can be a gate line made of a gate layer 50. Exemplarily, the temperature sensor 30 is configured from the same material as the gate layer 50. In one exemplary embodiment, the drive signal line 20 can also be a data line made of a source / drain layer 60. Exemplarily, the temperature sensor 30 is configured from the same material as the source / drain layer 60. Furthermore, the resistance of the temperature sensor 30 is positively correlated with the temperature. Exemplarily, the higher the temperature of the temperature sensor 30, the higher its corresponding resistance. Thus, the temperature of the display substrate at the position corresponding to the temperature sensor 30 can be determined based on the relationship between the resistance and temperature of the temperature sensor 30.

[0079] During the specific implementation process, the detection circuit 40 is configured to obtain the resistance results of the temperature sensor 30 at the initial temperature and the test temperature respectively, and determine the target temperature value corresponding to the test temperature based on the resistance results, and use the target temperature value as the current temperature value of the display substrate at the corresponding position of the temperature sensor 30.

[0080] In one exemplary embodiment, the detection circuit 40 may be configured to obtain a resistance change of the temperature sensor 30 at the initial temperature and the test temperature, respectively. Accordingly, the detection circuit 30 determines the temperature value at the corresponding position of the temperature sensor 30 at the test temperature based on the resistance change. Specifically, the detection circuit 40 may obtain the resistance value of the temperature sensor 30 at the initial temperature and the resistance value of the temperature sensor 30 at the test temperature, respectively; then, determine the resistance change of the resistance value at the test temperature compared to the resistance value at the initial temperature; and then, based on the corresponding relationship between the resistance change and the temperature change, determine the temperature value of the temperature sensor 30 at the test temperature.

[0081] For example, the resistance change of the temperature sensor 30 and the temperature change satisfy the formula: ΔP=P t -P T =L*△T=L*(tT), where t represents the test temperature, T represents the initial temperature, and P t Indicates the resistance value of the temperature sensor 30 at the test temperature, P T represents the resistance of the temperature sensor 30 at the initial temperature, ΔP represents the resistance change, ΔT represents the temperature change, and L represents the resistance difference per degree Celsius (which can be set as a positive constant). Accordingly, t=(P t -P T ) / L+T. In this way, after the temperature sensor 30 is electrically connected to the detection circuit 40, the detection circuit 40 can obtain the resistance change of the temperature sensor 30. Based on this resistance change and the value of L, the corresponding temperature change of the temperature sensor 30 can be determined. Thus, when the initial temperature is known, the current temperature value of the display substrate at the position corresponding to the temperature sensor 30 can be determined based on the temperature change and the initial temperature. Since the temperature sensor 30, made of the same material as the drive signal line, can be integrated within the display substrate during the entire temperature detection process, the accuracy of temperature detection is improved.

[0082] In one exemplary embodiment, the detection circuit 40 may be configured to obtain the resistance change rate of the temperature sensor 30 at the initial temperature and the test temperature, respectively. Accordingly, the detection circuit 40 is configured to determine the temperature value at the corresponding position of the temperature sensor 30 based on the resistance change rate. Specifically, the detection circuit 40 may obtain the resistance value of the temperature sensor 30 at the initial temperature and the resistance value of the temperature sensor 30 at the test temperature, respectively, and then determine the resistance change rate of the resistance value at the test temperature compared to the resistance value at the initial temperature. Then, based on the corresponding relationship between the resistance change rate and the temperature change, the temperature value of the temperature sensor 30 at the test temperature is determined.

[0083] For example, the resistance change rate of the temperature sensor 30 and the temperature change amount satisfy the formula: Δr=(P t / P T -1)=S*△T=S*(tT), where t represents the test temperature value, T represents the initial temperature value, P t Indicates the resistance value of the temperature sensor 30 at the test temperature, P T represents the resistance value of the temperature sensor 30 at the initial temperature, P t Greater than or equal to P T , △r represents the resistance change rate, △T represents the temperature change, and S represents a positive constant. Correspondingly, t=(P t / P T -1) / S+T. In this way, after the temperature sensor 30 is electrically connected to the detection circuit 40, the resistance change rate of the temperature sensor 30 can be obtained through the detection circuit 40. According to the resistance change rate and the corresponding positive constant, the corresponding temperature change of the temperature sensor 30 can be determined. In this way, when the initial temperature is known, the current temperature value of the display substrate at the corresponding position of the temperature sensor 30 can be determined according to the temperature change and the initial temperature. Since the temperature sensor 30 made of the same material as the drive signal line can be integrated into the display substrate during the entire temperature detection process, the accuracy of temperature detection is improved. In addition, for P t Less than P T When the temperature sensor 30 has a resistance change rate and a temperature change rate, the equation that needs to be satisfied can be referred to the description of the relevant part below and will not be described in detail here.

[0084] In the embodiment of the present disclosure, the material of the temperature sensor 30 is Mo / Al / Mo, or Ti / Al / Ti.

[0085] In one exemplary embodiment, the material of the temperature sensor 30 may be Mo / Al / Mo; in this exemplary embodiment, the temperature sensor 30 may be set with the same material as the gate layer 50, the line width of the temperature sensor 30 in the display area A may be 3.5μm, and the line width ratio in the binding area C may be 3.6μm / 6.4μm, the thickness of each layer in the temperature sensor 30 may be 800±120 Å / 3000±450 Å / 800±120 Å, and the square resistance of the temperature sensor 30 may be 0.09±0.003Ω / □. In another exemplary embodiment, the material of the temperature sensor 30 may be Ti / Al / Ti. In this exemplary embodiment, the temperature sensor 30 may be made of the same material as the source / drain layer 60. The line width of the temperature sensor 30 within the display area A may be 2.45 μm to 2.9 μm, with an exemplary line width of 2.9 μm. The line width ratio within the binding area C may be 2.8 μm / 3.2 μm. The thickness of each layer within the temperature sensor 30 may be 500 ± 15 Å / 5000 ± 250 Å / 300 ± 25 Å, and the sheet resistance of the temperature sensor 30 may be 0.06 ± 0.009 Ω / □. Furthermore, the specific material and related routing parameters of the temperature sensor 30 may be determined based on actual application requirements and are not limited here.

[0086] In the embodiment of the present disclosure, in order to implement regional detection of the display substrate in the display area A, the temperature sensor 30 includes a plurality of temperature units 31 arranged in an array in the display area A.

[0087] In the specific implementation process, the specific number of the multiple temperature units 31 can be set according to actual application needs and is not limited here. In addition, the arrangement of the multiple temperature units 31 in the display area A can be set according to actual application needs and is not limited here.

[0088] The present inventors have discovered through actual research that, in the display substrate provided by the embodiments of the present disclosure, each temperature unit 31 in the temperature sensor 30 can be made of the aforementioned materials. For an application scenario where multiple temperature units 31 are provided in the temperature sensor 30 on the same test display substrate, taking a test display substrate (denoted as product 1) including six temperature units 31 as an example, the specific temperature detection process is as follows:

[0089] First, product 1 was placed in a constant temperature environment for a period of time until it reached the ambient temperature (denoted as T). The resistance values ​​of each temperature unit 31 were recorded, denoted as P1T to P6T. Then, when the ambient temperature changed, the resistance values ​​of each temperature unit 31 at the test temperature t were measured, denoted as P1t to P6t. As shown in Figure 3, the temperature curves of each temperature unit 31 are P1 to P6, respectively. Table 1 shows the relevant test values ​​obtained for product 1.

[0090] Table 1

[0091] It should be noted that in Table 1, the resistance change rate of the same temperature unit 31 at the initial temperature and the test temperature is defined as (maximum resistance / minimum resistance - 1); the resistance difference of the same temperature unit 31 at the initial temperature and the test temperature can be defined as (maximum resistance - minimum resistance). The variation ratio of the resistance change rate (i.e., the ratio between the maximum and minimum values ​​of all resistance change rates) for all temperature units 31 in Product 1 is 1.039697, and the variation ratio of the resistance difference (i.e., the ratio between the maximum and minimum values ​​of all resistance differences) is 1.119874. Based on this, it can be seen that the uniformity of the resistance difference of different temperature units 31 in the same product is relatively good, and the uniformity of the resistance change rate is even better. In practical applications, the resistance difference or the resistance change rate can be used to detect the temperature of the corresponding position of the temperature unit 31, resulting in high temperature detection accuracy.

[0092] For an application scenario where multiple temperature units 31 are configured for a temperature sensor 30 on a single test display substrate, as shown in Figure 4, the eight temperature units 31 on this test display substrate (denoted as Product 2) correspond to temperature curves #1 through #8, with #9 representing the baseline curve (i.e., the standard temperature curve). Table 2 shows the relevant test values ​​obtained for Product 2.

[0093] Table 2

[0094] It should be noted that in Table 2, the resistance change rate of the same temperature unit 31 at the initial temperature and the test temperature is defined as (maximum resistance / minimum resistance - 1); the resistance difference of the same temperature unit 31 at the initial temperature and the test temperature can be defined as (maximum resistance - minimum resistance). The variation ratio of the resistance change rate (i.e., the ratio between the maximum and minimum values ​​of all resistance change rates) for all temperature units 31 in Product 2 is 1.019695, and the variation ratio of the resistance difference (i.e., the ratio between the maximum and minimum values ​​of all resistance differences) is 1.059896. Based on this, it can be seen that the uniformity of the resistance difference of different temperature units 31 in the same product is relatively good, and the uniformity of the resistance change rate is even better. In practical applications, the resistance difference or the resistance change rate can be used to detect the temperature of the corresponding position of the temperature unit 31, resulting in high temperature detection accuracy.

[0095] The inventors have found that based on the figures shown in Figures 3 and 4, it can be seen that the linearity of each curve is good, and the slopes of each temperature curve are basically the same. In this way, the resistance change of the temperature sensor 30 and the temperature change can be positively linearly correlated, and the resistance difference can be used to detect the temperature at the corresponding position of the temperature unit 31, that is, the temperature value is calculated using an incremental method. Accordingly, the relationship between the resistance change and the temperature change of the test temperature unit 31 satisfies the above-mentioned formula: △P=P t -P T =L*ΔT=L*(tT), accordingly, the temperature of the test temperature unit 31 at the test temperature is derived according to the formula (P t -P T ) / L+T. Thus, when the slope (i.e., L) is known, the temperature change can be determined based on the resistance change of temperature sensor 30, thereby enabling incremental temperature calculation. In the exemplary embodiment shown in FIG3 , L can be the resistance difference per °C (i.e., the resistance difference per degree Celsius). Because the slopes of different temperature curves are essentially the same and their deviations are minimal, using an incremental approach to calculate the temperature effectively eliminates the adverse effects of uniformity.

[0096] In addition, the inventors have found that based on the figures 3 and 4, the resistance change rate can also be used to detect the temperature at the corresponding position of the temperature unit 31. In one exemplary embodiment, if P t Less than P T , the resistance change rate of the test temperature unit 31 satisfies the formula: △r=P T / P t -1, the resistance change rate and temperature change of the test temperature unit 31 satisfy the formula: △r / S=(Tt)=△T, where △r represents the resistance change rate of the test temperature unit 31, and S represents the resistance change rate per degree Celsius. The temperature of the test temperature unit 31 at the test temperature t is derived according to the formula as (T-△r / S).

[0097] In one exemplary embodiment, if P t Greater than or equal to P T , the resistance change rate of the test temperature unit 31 satisfies the formula: △r=P t / P T -1, the resistance change rate and temperature change rate of the test temperature unit 31 satisfy the formula: △r / S=(tT)=△T, t=(P t / P T -1) / S+T, then the temperature of the test temperature unit 31 at the test temperature t is derived according to the formula as (T+Δr / S).

[0098] Still taking the exemplary embodiment shown in FIG. 3 as an example, after obtaining the resistance values ​​P1t to P6t of each temperature unit 31 at the test temperature t, the temperature change can be derived from the resistance change rate. For example, taking the temperature unit 31 corresponding to curve P1 as an example, the relationship between its resistance change rate and temperature change satisfies the formula: Δr1 = P1t / P1T-1 = S*ΔT = S*(tT), and the obtained test temperature is t = (P1t / P1T-1) / S+T. Based on the same testing principle, the temperature can also be tested using temperature units 31 corresponding to curves other than curve P1, which will not be described in detail here.

[0099] Still referring to the exemplary embodiment shown in Figure 3, the temperature values ​​calculated using the incremental method and the resistance change rate method in the disclosed embodiment are verified. When the incremental method is used, L is 0.005678; when the resistance change rate is used, S is 0.004073. The initial temperature is -30°C and the actual temperature is 30°C. The verification results of the two calculation methods are shown in Tables 3 and 4, respectively:

[0100] Table 3

[0101] As can be seen from Table 3, the temperature value calculated using the incremental method has a much smaller temperature error than the actual temperature of 30°C, and the temperature detection accuracy is high.

[0102] Table 4

[0103] As can be seen from Table 4, the temperature value calculated using the resistance change rate has a smaller temperature error than the temperature value calculated using the incremental method, which further ensures the accuracy of temperature detection.

[0104] Of course, in specific implementations, the temperature of the temperature sensor 30 can be calculated using an incremental method or a resistance change rate based on actual application needs, and this is not limited here. Furthermore, if only one temperature unit 31 is provided in the temperature sensor 30 on the same display substrate, the temperature can still be calculated using an incremental method or a resistance change rate, but this will not be discussed in detail here.

[0105] In a specific implementation process, the settings of the multiple temperature units 31 in the display area A can be set according to the following implementation methods, but are not limited to the following methods.

[0106] In one exemplary embodiment, the display substrate further includes a gate layer 50 and a source / drain layer 60 which are sequentially arranged away from the substrate 10, the temperature sensor 30 and the source / drain layer 60 are arranged in the same layer and material, and each of the temperature units 31 is arranged corresponding to at least one sub-pixel sp in one column of the multiple sub-pixels sp in the display area A.

[0107] In a specific implementation, as shown in FIG5 , the display substrate further includes a gate layer 50 and a source / drain layer 60, which are sequentially disposed away from the substrate 10. The temperature sensor 30 and the source / drain layer 60 are constructed from the same layer and material, thereby improving the manufacturing efficiency of the temperature sensor 30. Furthermore, each temperature unit 31 is configured to correspond to at least one sub-pixel sp in a column of the plurality of sub-pixels sp within the display area A. The at least one sub-pixel sp can be one or more, and this is not limited here. For example, each temperature unit 31 is configured to correspond to three sub-pixels sp in a column of the plurality of sub-pixels sp within the display area A. FIG6 shows a top-down schematic diagram of one embodiment of the temperature unit 31 distribution within the temperature sensor 30. The specific structure of each temperature unit 31 is described in the relevant sections below and is not further elaborated here. It should be noted that in this exemplary embodiment, the associated wiring of each temperature unit 31 does not overlap with the data line 110 formed from the source / drain layer 60, thereby ensuring both temperature detection and source drive efficiency.

[0108] It should be noted that in the exemplary embodiment shown in FIG5 , the display substrate includes a light shielding layer 70, a buffer layer 80, an active layer 90, a gate insulating layer 91, an interlayer insulating layer 92, a planarization layer 93, a common electrode layer 94, a passivation layer 95, a pixel electrode layer 96, and an alignment layer 97, which are sequentially arranged away from the substrate 10. The light shielding layer 70, the buffer layer 80, the active layer 90, the gate insulating layer 91, and the interlayer insulating layer 92 are located between the substrate 10 and the temperature sensor 30. Furthermore, in actual manufacturing processes, low-temperature polysilicon (LTPS)-related processes can be used to manufacture the display substrate shown in FIG5 . The specific process can be implemented with reference to relevant technologies and will not be described in detail here.

[0109] In one exemplary embodiment, the display substrate further includes a gate layer 50 and a source / drain layer 60 which are sequentially arranged away from the substrate 10, the temperature sensor 30 is arranged in the same layer and material as the gate layer 50, and each of the temperature units 31 is arranged corresponding to at least one sub-pixel sp in one row of the multiple sub-pixels sp in the display area A.

[0110] In the specific implementation process, as shown in Figure 7, the display substrate also includes a gate layer 50 and a source-drain layer 60 that are sequentially arranged away from the substrate 10, and the temperature sensor 30 is arranged in the same layer and the same material as the gate layer 50. In this way, the production efficiency of the temperature sensor 30 is improved. Moreover, each temperature unit 31 is arranged corresponding to at least one sub-pixel sp in one row of multiple sub-pixels sp in the display area A. Among them, at least one sub-pixel sp can be one or more, which is not limited here. For example, each temperature unit 31 is arranged corresponding to four sub-pixels sp in one row of multiple sub-pixels sp in the display area A. Figure 8 shows a schematic diagram of a top view structure of one of the temperature units 31 in the temperature sensor 30. Among them, the specific structure of each temperature unit 31 can refer to the description of the relevant part below, and will not be described in detail here.

[0111] It should be noted that, in this exemplary embodiment, the relevant wiring of each temperature unit 31 does not overlap with the gate line 130 made of the gate layer 50, thereby ensuring temperature detection while taking into account the gate drive effect. It should be noted that, in the exemplary embodiment shown in FIG7 , the display substrate includes a light shielding layer 70, a buffer layer 80, an active layer 90, a gate insulating layer 91, an interlayer insulating layer 92, a flat layer 93, a common electrode layer 94, a passivation layer 95, a pixel electrode layer 96 and an alignment layer 97, which are sequentially arranged away from the substrate 10; wherein, the light shielding layer 70, the buffer layer 80, the active layer 90, the gate insulating layer 91 and the gate insulating layer 91 are located between the substrate 10 and the temperature sensor 30. In addition, in the actual preparation process, an amorphous silicon (a-Si) related process can be used to prepare the display substrate shown in FIG7 . The specific process can be implemented with reference to the relevant technology and will not be described in detail here.

[0112] In the embodiment of the present disclosure, along a first direction, the display area A includes a first side A1 and a second side A2 arranged opposite to each other; the first portion 311 located on the first side A1 and the second portion 312 located on the second side A2 of the multiple temperature units 31 are symmetrically arranged compared to the central axis of the display substrate; the direction of the central axis is parallel to a second direction intersecting with the first direction, and the first direction is parallel to the column direction or row direction of the multiple sub-pixels sp.

[0113] In one exemplary embodiment, the first direction is a row direction parallel to the plurality of sub-pixels sp, and the second direction is a column direction parallel to the plurality of sub-pixels sp. In the embodiment of the present disclosure, unless otherwise specified, the direction indicated by the arrow X is a row direction parallel to the plurality of sub-pixels sp, and the direction indicated by the arrow Y is a column direction parallel to the plurality of sub-pixels sp. In the exemplary embodiment shown in FIG9 , the first direction is the direction indicated by the arrow X, and the second direction is the direction indicated by the arrow Y; in the first direction, the display area A includes a first side A1 and a second side A2 arranged opposite to each other, and the first part 311 of the plurality of temperature units 31 located on the first side A1 and the second part 312 located on the second side A2 are symmetrically arranged relative to the central axis of the display substrate. The central axis of the display substrate is shown as OO in FIG9 . In this way, the symmetry of temperature detection in the display area A is ensured.

[0114] In another exemplary embodiment, the first direction is a column direction parallel to the multiple sub-pixels sp, and the second direction is a row direction parallel to the multiple sub-pixels sp. The arrangement of the multiple temperature units 31 in the display area A can be set with reference to the exemplary embodiment shown in Figure 9, which will not be described in detail here.

[0115] In the embodiment of the present disclosure, the display substrate also includes a first lead 98 respectively connected to each of the temperature units 31 in the first part 311 and the corresponding detection circuit 40, and a second lead 99 respectively connected to each of the temperature units 31 in the second part 312 and the corresponding detection circuit 40, and the first lead 98 and the second lead 99 are respectively located on the same side of the display area A.

[0116] Still referring to the exemplary embodiment shown in FIG. 9 , the first lead 98 and the second lead 99 are respectively located at the lower side of the display area A, and the two may also be symmetrically arranged relative to the central axis of the display substrate.

[0117] In one exemplary embodiment, as shown in Figure 10, the first direction is a row direction parallel to the multiple sub-pixels sp (the direction indicated by the arrow X in the figure), and the second direction is a column direction parallel to the multiple sub-pixels sp (the direction indicated by the arrow Y in the figure). In addition to the first part 311 and the second part 312, the multiple temperature units 31 also include a third part 313 located on the first side A1 and a fourth part 314 located on the second side A2. The third part 313 and the first part 311 are symmetrically arranged with respect to another central axis (as shown by MM in Figure 10) perpendicular to the central axis of the display substrate (as shown by OO in Figure 10), and the fourth part 314 and the second part 312 are symmetrically arranged with respect to another central axis (as shown by MM in Figure 10) perpendicular to the central axis of the display substrate. Moreover, the display substrate also includes a third lead 315 electrically connected to each temperature unit 31 and the corresponding detection circuit 40 in the third part 313, and a fourth lead 316 electrically connected to each temperature unit 31 and the corresponding detection circuit 40 in the fourth part 314; the third lead 315 and the fourth lead 316 can be located on the upper side of the display area A, and the two can also be symmetrically arranged relative to the central axis of the display substrate; the first lead 98 and the third lead 315 can be symmetrically arranged relative to another central axis of the display substrate, and the second lead 99 and the fourth lead 316 can be symmetrically arranged relative to another central axis of the display substrate.

[0118] Of course, the multiple temperature units 31 in the display area A may be divided and related leads may be set according to actual application needs, which will not be described in detail here.

[0119] In the embodiment of the present disclosure, each of the temperature units 31 is disposed corresponding to the sub-pixels sp in an area surrounded by multiple rows and multiple columns of the multiple sub-pixels sp.

[0120] In one exemplary embodiment, as shown in FIG11 , three temperature units 31 are arranged in a display substrate along a column direction parallel to a plurality of sub-pixels sp. Each temperature unit 31 is configured to correspond to two rows and six columns of sub-pixels sp within a display area A. Furthermore, in addition to the exemplary embodiment shown in FIG11 , based on the same concept, the correspondence between each sub-unit 310 and a sub-pixel sp can also be such that each sub-unit corresponds to the same column of sub-pixels sp. Of course, the correspondence between each sub-unit 31 and a sub-pixel sp within each temperature unit 31 can also be configured based on actual application needs, and this is not limited here.

[0121] In one exemplary embodiment, as shown in FIG12 , taking three temperature units 31 arranged in a row direction parallel to a plurality of sub-pixels sp in a display substrate as an example, each temperature unit 31 is set corresponding to the sub-pixels sp in two rows and five columns in the display area A. Of course, the correspondence between each temperature unit 31 and the plurality of sub-pixels sp can also be set according to actual application needs, which is not limited here. In addition, in addition to the exemplary embodiment shown in FIG12 , based on the same concept, the correspondence between each sub-unit 310 and the sub-pixel sp can also be that each sub-unit is set corresponding to the sub-pixels sp in the same row. Of course, the correspondence between each sub-unit 31 and the sub-pixel sp in each temperature unit 31 can also be set according to actual application needs, which is not limited here.

[0122] Still referring to FIG11 , each temperature unit 31 includes a plurality of subunits 310 arranged sequentially along a first direction, with adjacent subunits 310 connected by a connecting portion 320 extending along the first direction. Of course, in actual applications, the specific number of subunits 310 included in each temperature unit 31 can be set as needed, and this is not limited here.

[0123] In the embodiment of the present disclosure, along the first direction or a second direction intersecting the first direction, each temperature unit 31 corresponds to the same number of subunits 310. In this way, the area of ​​each temperature unit 31 can be set to be the same, thereby improving the efficiency of temperature detection.

[0124] Still combining with the exemplary embodiment shown in Figure 11, the first direction is parallel to the column direction of the multiple sub-pixels sp. Along the first direction, the number of the multiple sub-units 310 corresponding to each temperature unit 31 is five. In this way, the number of the connecting parts 320 of each temperature unit 31 is also the same.

[0125] Still combining with the exemplary embodiment shown in Figure 12, the first direction is parallel to the row direction of the multiple sub-pixels sp. Along the second direction, the number of the multiple sub-units 310 corresponding to each temperature unit 31 is five. In this way, the number of the connecting parts 320 of each temperature unit 31 is also the same.

[0126] It should be noted here that the “same” in this article does not mean absolutely the same, but can also mean roughly the same or approximately the same.

[0127] In one exemplary embodiment, as shown in FIG13 , in addition to the multiple subunits 310 and the connection portion 320, a floating connection line 100 is provided within the region where each temperature unit 31 is located. The floating connection line 100 is made of the same material as the corresponding temperature unit 31 and is disconnected from the corresponding temperature unit 31. Thus, the provision of the floating connection line 100 ensures display uniformity.

[0128] In one exemplary embodiment, along a second direction intersecting the first direction, the number of subunits 310 corresponding to each temperature unit 31 decreases. FIG14 is a schematic diagram of one structural embodiment of a temperature unit 31. This maximizes the number of subunits 310 in each temperature unit 31, improving temperature detection accuracy.

[0129] In one exemplary embodiment, as shown in Figures 13 and 14, each of the sub-units 310 includes a first branch 101, a second branch 102, and a third branch 103 connected in sequence, and the first branch 101 and the third branch 103 are both extended along a second direction intersecting with the first direction, and the second branch 102 is extended along the first direction. The structure surrounded by the first branch 101, the second branch 102, and the third branch 103 is U-shaped. In this way, in the actual preparation process, the branches of each sub-unit 310 in each temperature unit 31 can be set along a direction parallel to the gate line or the data line, which can effectively avoid the temperature sensor 30 from blocking the pixel aperture rate, thereby ensuring the display effect. In addition, the specific structure of each sub-unit 310 can also be set according to actual application needs, which will not be described in detail here.

[0130] It should be noted that by providing multiple temperature cells 31 within the display area A for multi-region temperature detection, and each temperature cell 31 corresponding to the sub-pixels sp in the area enclosed by multiple rows and columns of the multiple sub-pixels sp, in order to avoid interference between the associated wiring of each temperature cell 31 and the drive signal line 20, some of the wiring of the temperature cell 31 can be provided in the same layer and material as the drive signal line 20, while other wiring can be provided in another conductive layer. Still taking the exemplary embodiment shown in FIG13 as an example, the first branch 101 and the third branch 103 in each temperature cell 31 can be provided in the same layer and material as the source and drain layer, while the second branch 102 and the connecting portion 320 can be made of another conductive layer. This ensures both temperature detection and driving performance. Still taking the exemplary embodiment shown in FIG12 as an example, the first branch 101 and the third branch 103 in each temperature cell 31 can be provided in the same layer and material as the gate layer, while the second branch 102 and the connecting portion 320 can be made of another conductive layer. This ensures both temperature detection and driving performance.

[0131] In one of the exemplary embodiments, as shown in Figure 15, the display substrate also includes a pixel electrode layer 96 and a common electrode layer 94 arranged in sequence away from the substrate 10, each of the temperature units 31 is located between the pixel electrode layer 96 and the common electrode layer 94, and the orthographic projection of each of the temperature units 31 on the substrate 10 completely falls within the area of ​​the orthographic projection of the common electrode layer 94 on the substrate 10.

[0132] It should be noted that, in actual applications, the 7Mask scheme can be used to design the display substrate shown in FIG15 . Accordingly, a conductive layer can be added between the pixel electrode layer 30 and the common electrode layer 94, and the conductive layer can be patterned to form a temperature sensor 30 of the desired pattern. In the exemplary embodiment shown in FIG15 , the display substrate further includes a first passivation layer 330 located between the temperature sensor 30 and the pixel electrode layer 96, a second passivation layer 340 located between the common electrode layer 94 and the temperature sensor 30, and a gate insulating layer 91 located between the pixel electrode layer 96 and the substrate 10. Of course, the display substrate can also be provided with other structures in addition to the film layers mentioned above. The specific settings can be implemented by referring to relevant technologies and will not be described in detail here.

[0133] In an embodiment of the present disclosure, in combination with the exemplary embodiment shown in Figure 16, the display substrate further includes a plurality of data lines 110 extending along a column direction parallel to the plurality of sub-pixels sp, a redundant line 120 located between two adjacent data lines 110 and extending along a column direction parallel to the plurality of sub-pixels sp, and a plurality of gate lines 130 extending along a row direction parallel to the plurality of sub-pixels sp; each of the temperature units 31 includes a first strip structure 140 arranged corresponding to the redundant line 120, and a plurality of second strip structures 150 arranged corresponding to the plurality of gate lines 130, and the plurality of first strip structures 140 and the plurality of second strip structures 150 form a mesh structure 160, the orthographic projection of each of the first strip structures 140 on the substrate 10 completely falls within the area of ​​the orthographic projection of the corresponding redundant line 120 on the substrate 10, and the orthographic projection of each of the second strip structures 150 on the substrate 10 does not overlap with the orthographic projection of the gate line 130 at the corresponding position on the substrate 10.

[0134] During the specific implementation process, the specific number of the multiple data lines 110 and redundant lines 120, as well as the specific number of the first strip structures 140 and the second strip structures 150, can be set according to the actual application and are not limited here. Still referring to the exemplary embodiment shown in Figure 16, Figure 15 is a schematic diagram of one of the cross-sectional structures along the direction indicated by PP, and the first strip structure 140 and the second strip structure 150 intersect through a hollow ring structure 170. For example, the orthographic projection shape of the ring structure 170 on the substrate 10 is a hexagon. For another example, the orthographic projection shape of the ring structure 170 on the substrate 10 is a circle. Of course, the specific shape of the ring structure 170 can also be set according to the actual application needs and is not limited here. In this way, in the actual preparation process, the ring structure 170 is more conducive to process control, simplifies the production process of the display substrate, and improves the production yield of the display substrate.

[0135] In one exemplary embodiment, as shown in FIG17 , the temperature sensor 30 is located in a peripheral area B surrounding the display area A. In this way, the temperature detection of the peripheral area B is achieved.

[0136] In an exemplary embodiment of the present disclosure, the display substrate further includes a driving device 180 located in a binding area C and electrically connected to the driving signal line. The temperature sensor 30 is arranged around the driving device 180 , and the binding area C is located on one side of the display area A.

[0137] In one of the exemplary embodiments, as shown in Figures 18 and 19, the driving device 180 is a source driver electrically connected to the data line 110, and the relevant wiring of the temperature sensor 30 can be arranged above the source driver and around the source driver. It should be noted that in the exemplary embodiment shown in Figure 18, the opposite ends of the wiring corresponding to the temperature sensor 30 can be respectively arranged on opposite sides of the source driver; in the exemplary embodiment shown in Figure 19, the opposite ends of the wiring corresponding to the temperature sensor 30 can both be arranged on the same side of the source driver. Of course, in the embodiment of the present disclosure, in addition to the above-mentioned method for setting the temperature sensor 30, other methods can also be used to set the temperature sensor 30 according to actual application needs, which will not be described in detail here.

[0138] In the embodiment of the present disclosure, the detection circuit 40 may be configured in the following manners, but is not limited to the following manners.

[0139] In one exemplary embodiment, as shown in Figure 20, the detection circuit 40 includes a bridge unit 41, a first amplifying unit 42, a first analog-to-digital conversion unit 43 and a first processing unit 44; the bridge unit 41 is electrically connected to the temperature sensor 30 and the first amplifying unit 42, respectively, and the first analog-to-digital conversion unit 43 is electrically connected to the first amplifying unit 42 and the first processing unit 44, respectively; the bridge unit 41 includes a first resistor 411, a second resistor 412 and a third resistor 413; the input end of the first amplifying unit 42 is electrically connected to the first node N1 and the second node N2, respectively, the temperature sensor 30 is electrically connected to the power supply terminal V1 and the first node N1, respectively, the first resistor 411 is electrically connected to the power supply terminal V1 and the second node N2, respectively, the second resistor 412 is electrically connected to the first node N1 and the third node N3, the third resistor 413 is electrically connected to the third node N3 and the second node N2, respectively, and the third node N3 is grounded.

[0140] It should be noted that in the exemplary embodiment shown in FIG20 , the first amplifying unit 42 may be an amplifier, the first analog-to-digital conversion unit 43 may be an analog-to-digital converter, and the first processing unit 44 may be a microcontroller unit (MCU). The first resistor 411 and the third resistor 413 are connected in series, and the second resistor 412 and the temperature sensor 30 are connected in series. The first resistor 411 and the third resistor 413 connected in series are connected in parallel with the second resistor 412 and the temperature sensor 30 connected in series. The direction indicated by the arrow in FIG20 is the direction of signal flow. The first amplifying unit 42 is configured to amplify the difference between the potential of the first node N1 and the potential of the second node N2 to obtain an amplified voltage value; the first analog-to-digital conversion unit 43 is configured to convert the amplified voltage value into a corresponding digital signal; and the first processing unit 44 is configured to obtain and store a corresponding resistance value based on the digital signal corresponding to the amplified voltage value. If the voltage applied to the power supply terminal V1 is VCC, the potential of one port of the first amplifier unit 42 is: VCC*R3 / (R1+R3), and the potential of the other port of the first amplifier unit 42 is: VCC*R2 / (Rs+R2). Accordingly, the voltage Vs entering the first amplifier unit 42 is VCC*(R3 / (R1+R3)-R2 / (Rs+R2). Wherein, R1 represents the resistance value of the first resistor 411, R2 represents the resistance value of the second resistor 412, and R3 represents the resistance value of the third resistor 4 13, and Rs represents the resistance of the temperature sensor 30. In practical applications, the resistance values ​​of the first resistor 411, the second resistor 412, and the third resistor 413 can be selected according to the actual situation so that the initial value of the first amplifying unit 42 (i.e., the voltage difference between the corresponding two ports) is close to 0V, ensuring high sensitivity of the amplified data acquisition of the temperature sensor 30. For example, the resistance values ​​of the first resistor 411, the second resistor 412, and the third resistor 413 can be selected to be equal to the resistance value of the temperature sensor 30.

[0141] In one exemplary embodiment, as shown in Figure 21, the detection circuit 40 includes a fourth resistor 190, a second amplifying unit 200, a second analog-to-digital conversion unit 210 and a second processing unit 220; the second analog-to-digital conversion unit 210 is electrically connected to the second amplifying unit 200 and the second processing unit 220, respectively; the temperature sensor 30 is electrically connected to the fourth node N4 and the power supply terminal V1, respectively, the fourth resistor 190 is electrically connected to the fourth node N4 and the ground, respectively, the fourth node N4 is electrically connected to one of the input terminals of the second amplifying unit 200, and the other input terminal of the second amplifying unit 200 is electrically connected to the reference voltage terminal V2.

[0142] In the exemplary embodiment shown in FIG21 , the second amplification unit 200 can be an amplifier, the second analog-to-digital conversion unit 210 can be an analog-to-digital converter, the second processing unit 220 can be an MCU, and the fourth resistor 190 is connected in series with the temperature sensor 30. The direction indicated by the arrow in FIG21 represents the direction of signal flow. The second amplification unit 200 is configured to amplify the difference between the potential of the fourth node N4 and the potential of the reference voltage terminal V2 to obtain an amplified voltage value; the second analog-to-digital conversion unit 210 is configured to convert the amplified voltage value into a corresponding digital signal; and the second processing unit 220 is configured to obtain and store a corresponding resistance value based on the digital signal corresponding to the amplified voltage value. In this exemplary embodiment, amplified data acquisition of the temperature sensor 30 can be achieved. For example, if the potential applied to power supply terminal V1 is VCC, the potential at one port of the second amplifier unit 200 is: VCC*R4 / (R4+Rs), and the potential at the other port of the second amplifier unit 200 is Vref. Accordingly, the voltage Vs entering the second amplifier unit 200 is VCC*R4 / (R4+Rs)-Vref, where R4 represents the resistance of the fourth resistor 190, and Rs represents the resistance of the temperature sensor 30. In practical applications, the resistance of the fourth resistor 190 can be selected so that the initial value of the second amplifier unit 200 (i.e., the voltage difference between the corresponding two ports) is close to 0V, thereby ensuring the sensitivity of the amplification and acquisition of the temperature sensor 30. For example, the resistance of the fourth resistor 190 can be selected to be equal to the resistance of the temperature sensor 30. For example, if the potential applied to the power supply terminal V1 is 5V and the potential applied to the reference voltage terminal V2 is 2.5V, when the resistance of the fourth resistor 190 is equal to the resistance of the temperature sensor 30, the initial value of the second amplifying unit 200 is 0V. This ensures high sensitivity in the amplified acquisition of the temperature sensor 30. Compared to the exemplary embodiment shown in FIG20 , the exemplary embodiment shown in FIG21 reduces the number of resistors used. In particular, when the temperature sensor 30 performs zoned detection within the display area A, this can effectively reduce the number of resistors.

[0143] In one embodiment, if the temperature sensor 30 in the display substrate is configured as shown in FIG9 , and the detection circuit 40 electrically connected to each temperature unit 31 employs the circuit structure shown in FIG21 , FIG22 is a block diagram of the overall display substrate. Each temperature unit 31 can share a common processing unit 230 . Each temperature unit 31 corresponding to the first portion 311 can share a common first multi-channel amplifier 240 , and each temperature unit 31 corresponding to the second portion 312 can share a common second multi-channel amplifier 240 . Accordingly, the first multi-channel amplifier 240 is electrically connected to the first multi-channel analog-to-digital converter 250 , and the second multi-channel amplifier is electrically connected to the second multi-channel analog-to-digital converter 260 . The arrows in FIG22 indicate the direction of signal flow. In practical applications, the processing unit 230 can process relevant signals under the control of a frame signal (VS). Of course, the number of multi-channel amplifiers and multi-channel analog-to-digital converters can be adjusted based on actual application needs, as well as the connection relationship between the corresponding components and the corresponding temperature units 31 . In addition, the specific signal processing process of each device in the block diagram can refer to the description of the relevant parts above, which will not be repeated here. Of course, the relevant devices in the display substrate and the connection relationship between them can also be set according to actual application needs, which will not be described in detail here.

[0144] It should be noted that the display substrate provided in the embodiments of the present disclosure can be applied to liquid crystal display devices, organic light emitting diode (OLED) display devices, and micro light emitting diode (Micro LED) display devices. Of course, the display substrate provided in the embodiments of the present disclosure can also be applied to the desired display device according to actual application needs, which will not be described in detail here.

[0145] Based on the same disclosed concept, as shown in FIG23 , an embodiment of the present disclosure provides a display device, which includes:

[0146] The display substrate 300 as described in any one of the above items, the opposite substrate 400 disposed opposite to the display substrate 300 , and the liquid crystal layer 500 located between the display substrate 300 and the opposite substrate 400 .

[0147] In a specific implementation process, the principle of solving the problem of the display device is similar to that of the aforementioned display substrate 300. Therefore, the implementation of the display device can refer to the implementation of the aforementioned display substrate 300, and the repeated parts will not be repeated.

[0148] In an embodiment of the present disclosure, FIG24 shows a schematic diagram of one structural embodiment of a display device. The counter substrate 400 further includes a plurality of filter sections 401 arranged in an array, and a light shielding section 402 disposed around each filter section 401. The orthographic projection of the temperature sensor 30 on the substrate 10 completely falls within the orthographic projection area of ​​the light shielding section 402 on the substrate 10. This ensures both temperature detection and display quality. The specific number of filter sections 401 can be set based on actual application needs and is not limited here. Furthermore, in a specific implementation, in addition to the aforementioned structures, the counter substrate 400 may also include other film structures, such as a planar layer 403 located on the side of the filter sections 401 facing away from the corresponding substrate 10, and an alignment layer 404 located on the side of the planar layer 403 facing away from the corresponding substrate 10. Of course, other structures of the counter substrate 400 may also be provided based on actual application needs, but these will not be described in detail here. The display device further includes a first polarizer 405 located on the side of the counter substrate 400 corresponding to the substrate 10 facing away from the liquid crystal layer 500, and a second polarizer 301 located on the side of the substrate 10 of the display substrate 300 facing away from the liquid crystal layer 500, thereby ensuring the display effect of the display device. It should be noted that when the display substrate 300 adopts the structure shown in Figure 5, the cross-sectional structure of the display device is shown in Figure 24. When the display substrate 300 adopts the structure shown in Figure 7, the cross-sectional structure of the display device is shown in Figure 25.

[0149] In specific implementations, the display device provided by the embodiments of the present disclosure can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigation system. Other essential components of the display device are well understood by those skilled in the art and are not detailed here, nor should they be construed as limitations of the present disclosure.

[0150] Based on the same disclosed concept, as shown in FIG26 , an embodiment of the present disclosure provides a temperature detection method applied to a display substrate as described above, wherein the temperature detection method includes:

[0151] S101: placing the display substrate at an initial temperature, and obtaining a first resistance value of the temperature sensor through the detection circuit;

[0152] S102: Obtaining a second resistance value of the temperature sensor at a test temperature through the detection circuit;

[0153] S103: determining the temperature change according to a correspondence between the first resistance value, the second resistance value, and the temperature change;

[0154] S104: determining a target temperature value corresponding to the test temperature according to the initial temperature and the temperature variation, and using the target temperature value as a current temperature value of the display substrate at a position corresponding to the temperature sensor.

[0155] In the specific implementation process, the specific implementation process of step S101 to step S104 is as follows:

[0156] First, the display substrate is placed at an initial temperature, and the first resistance value of the temperature sensor is obtained through the detection circuit. The specific value of the initial temperature can be set according to the actual application needs. For example, the initial temperature is 25°C. For example, the display substrate temperature range is 0°C to 100°C, and the initial temperature can be selected as 50°C. For another example, the display substrate temperature range is -30°C to 30°C, and the initial temperature can be selected as 0°C. For another example, the display substrate temperature range is 0°C to 100°C, and the frequently used temperature value is 80°C, and the initial temperature can be selected as 80°C. Of course, the initial temperature can also be selected according to the actual application needs, and this is not limited here. It should be noted that in order to ensure the accuracy of the resistance detection of the temperature sensor, the display substrate can be left at the initial temperature (i.e., constant temperature environment) for a period of time so that the temperature of the temperature sensor and the ambient temperature are approximately equal. For example, at the initial temperature T, the first resistance value of the temperature sensor obtained by the detection circuit is recorded as P1T.

[0157] Then, the detection circuit is determined to obtain a second resistance value of the temperature sensor at the test temperature. This can be when the ambient temperature changes, for example, at the test temperature t, the second resistance value of the temperature sensor is obtained by the detection circuit. Exemplarily, the second resistance value of the temperature sensor obtained by the detection circuit at the test temperature t is recorded as P1t.

[0158] Then, based on the correspondence between the first resistance value, the second resistance value, and the temperature change, the temperature change is determined. For example, the resistance change of the second resistance value relative to the first resistance value can be determined, and the temperature change can be determined based on the correspondence between the resistance change and the temperature change. If resistance change / temperature change = L, then the temperature change is resistance change / L. Then, based on the initial temperature and the temperature change, a target temperature corresponding to the test temperature is determined. Still using the above exemplary embodiment as an example, if the temperature change is resistance change / L, then the target temperature corresponding to the test temperature is (T + resistance change / L). In this way, the temperature of the display substrate at the corresponding position of the temperature sensor can be detected.

[0159] In the embodiments of the present disclosure, the following implementation methods may be used to determine the temperature change, but are not limited to the following implementation methods and are not limited here.

[0160] In one exemplary embodiment, the temperature value of the temperature sensor may be calculated in an incremental manner. Accordingly, as shown in FIG27 , step S103 : determining the temperature change according to the corresponding relationship between the first resistance value, the second resistance value, and the temperature change, includes:

[0161] S201: Determine a resistance change of the second resistance value compared to the first resistance value;

[0162] S202: Determine the temperature change according to the corresponding relationship between the resistance change and the temperature change.

[0163] In the specific implementation process, the specific implementation process of step S201 to step S202 is as follows:

[0164] First, the corresponding resistance change is the resistance difference between the second resistance and the first resistance; then, the temperature change is determined based on the corresponding relationship between the resistance difference and the temperature change. For example, the resistance change and temperature change of the temperature sensor 30 satisfy the formula: ΔP = P t -P T =L*△T=L*(tT), where t represents the test temperature, T represents the initial temperature, and P t Indicates the resistance value of the temperature sensor 30 at the test temperature, P T represents the resistance of the temperature sensor 30 at the initial temperature, ΔP represents the resistance change, ΔT represents the temperature change, and L represents a positive constant. Accordingly, the temperature change ΔT=(P t -P T ) / L.

[0165] In one exemplary embodiment, the temperature value of the temperature sensor may be calculated using a resistance change rate. Accordingly, as shown in FIG28 , step S103 , determining the temperature change amount based on a correspondence between the first resistance value, the second resistance value, and the temperature change amount, includes:

[0166] S301: Determine a resistance change rate of the second resistance value compared to the first resistance value;

[0167] S302: Determine the temperature change amount according to the corresponding relationship between the resistance change rate and the temperature change amount.

[0168] In the specific implementation process, the specific implementation process of step S301 to step S302 is as follows:

[0169] If the second resistance is greater than the first resistance, the corresponding resistance change rate is (second resistance / first resistance-1); then, the temperature change is determined based on the corresponding relationship between the resistance change rate and the temperature change. For example, if P t Greater than or equal to P T The resistance change rate of the temperature sensor 30 and the temperature change amount satisfy the formula: △r=P t / P T -1=S*△T=S*(tT), where t represents the test temperature value, T represents the initial temperature value, P t Indicates the resistance value of the temperature sensor 30 at the test temperature, P T represents the resistance of the temperature sensor 30 at the initial temperature, Δr represents the resistance change rate, ΔT represents the temperature change, and S represents the resistance change rate per degree Celsius. Accordingly, the temperature change ΔT=(P t / P T -1) / S.

[0170] For example, if P t Less than P T The resistance change rate of the temperature sensor 30 and the temperature change amount satisfy the formula: △r=P T / P t -1=S*△T=S*(Tt), where t represents the test temperature value, T represents the initial temperature value, P t Indicates the resistance value of the temperature sensor 30 at the test temperature, P T represents the resistance of the temperature sensor 30 at the initial temperature, Δr represents the resistance change rate, ΔT represents the temperature change, and S represents the resistance change rate per degree Celsius. Accordingly, the temperature change ΔT=(P T / P t Of course, for the specific test process, please refer to the description of the relevant parts above, and I will not go into details here.

[0171] Although the preferred embodiments of the present disclosure have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present disclosure.

[0172] Obviously, those skilled in the art may make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. Thus, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalents, the present disclosure is intended to include these modifications and variations.

Claims

1. A display substrate, wherein: include: A substrate, a driving signal line located on the substrate, a temperature sensor provided with the same material as the driving signal line, and a detection circuit electrically connected to the temperature sensor; In which, the resistance value of the temperature sensor is positively correlated with the temperature value, and the detection circuit is configured to obtain the resistance results of the temperature sensor at the initial temperature and the test temperature respectively, and determine the target temperature value corresponding to the test temperature based on the resistance results, and use the target temperature value as the current temperature value of the display substrate at the corresponding position of the temperature sensor.

2. The display substrate according to claim 1, wherein: The material of the temperature sensor is Mo / Al / Mo, or Ti / Al / Ti.

3. The display substrate according to claim 1 or 2, wherein: The temperature sensor includes a plurality of temperature units arranged in an array within the display area.

4. The display substrate according to claim 3, wherein: It also includes a gate layer and a source-drain layer arranged in sequence away from the substrate, the temperature sensor and the source-drain layer are arranged in the same layer and material, and each temperature unit is arranged corresponding to at least one sub-pixel in one column of multiple sub-pixels in the display area.

5. The display substrate according to claim 3, wherein: It also includes a gate layer and a source and drain layer arranged in sequence away from the substrate. The temperature sensor is arranged in the same layer and material as the gate layer, and each temperature unit is arranged corresponding to at least one sub-pixel in one row of multiple sub-pixels in the display area.

6. The display substrate according to claim 4 or 5, wherein: Along a first direction, the display area includes a first side and a second side arranged opposite to each other; a first portion of the multiple temperature units located on the first side and a second portion located on the second side are symmetrically arranged relative to the central axis of the display substrate; the direction of the central axis is parallel to a second direction intersecting with the first direction, and the first direction is parallel to the column direction or row direction of the multiple sub-pixels.

7. The display substrate according to claim 6, wherein: It also includes a first lead connected to each of the temperature units in the first part and the corresponding detection circuit, and a second lead connected to each of the temperature units in the second part and the corresponding detection circuit, respectively. The first lead and the second lead are located on the same side of the display area.

8. The display substrate according to claim 3, wherein: Each of the temperature units is disposed corresponding to a sub-pixel in an area surrounded by a plurality of rows and a plurality of columns of the plurality of sub-pixels.

9. The display substrate according to any one of claims 4, 5, 7 and 8, wherein: Each of the temperature units includes a plurality of subunits sequentially arranged along a first direction, and two adjacent subunits are connected via a connecting portion extending along the first direction.

10. The display substrate according to claim 9, wherein: Along the first direction or a second direction intersecting the first direction, the number of the sub-units corresponding to each of the temperature units is the same.

11. The display substrate according to claim 10, wherein: In the area where each temperature unit is located, in addition to the multiple sub-units and the connecting portion, a floating connection line is also provided. The floating connection line is provided with the same material as the corresponding temperature unit and is disconnected from the corresponding temperature unit.

12. The display substrate according to claim 9, wherein: Along a second direction intersecting the first direction, the number of the plurality of sub-units corresponding to each of the temperature units tends to decrease.

13. The display substrate according to claim 9, wherein: Each of the subunits includes a first branch, a second branch, and a third branch connected in sequence, and the first branch and the third branch are both extended along a second direction intersecting with the first direction, the second branch is extended along the first direction, and the structure surrounded by the first branch, the second branch, and the third branch is U-shaped.

14. The display substrate according to claim 8, wherein: It also includes a pixel electrode layer and a common electrode layer arranged in sequence away from the substrate, each of the temperature units is located between the pixel electrode layer and the common electrode layer, and the orthographic projection of each of the temperature units on the substrate completely falls within the area of ​​the orthographic projection of the common electrode layer on the substrate.

15. The display substrate according to claim 14, wherein: It also includes a plurality of data lines extending in a column direction parallel to the plurality of sub-pixels, a redundant line located between two adjacent data lines and extending in a column direction parallel to the plurality of sub-pixels, and a plurality of gate lines extending in a row direction parallel to the plurality of sub-pixels; each of the temperature units includes a first strip structure arranged corresponding to the redundant line, and a plurality of second strip structures arranged corresponding to the plurality of gate lines, and the plurality of first strip structures and the plurality of second strip structures form a mesh structure, the orthographic projection of each of the first strip structures on the substrate completely falls within the area of ​​the orthographic projection of the corresponding redundant line on the substrate, and the orthographic projection of each of the second strip structures on the substrate does not overlap with the orthographic projection of the gate line at the corresponding position on the substrate.

16. The display substrate according to claim 15, wherein: The first strip-shaped structure and the second strip-shaped structure intersect through a hollow annular structure.

17. The display substrate according to claim 1 or 2, wherein: The temperature sensor is located in a peripheral area surrounding the display area.

18. The display substrate according to claim 1 or 2, wherein: It also includes a driving device located in the binding area and electrically connected to the driving signal line. The temperature sensor is arranged around the driving device, and the binding area is located on one side of the display area.

19. The display substrate according to any one of claims 4, 5, 7, 8, 10-16, wherein: The detection circuit includes a bridge unit, a first amplifying unit, a first analog-to-digital conversion unit and a first processing unit; the bridge unit is electrically connected to the temperature sensor and the first amplifying unit, respectively, and the first analog-to-digital conversion unit is electrically connected to the first amplifying unit and the first processing unit, respectively; the bridge unit includes a first resistor, a second resistor and a third resistor; the input end of the first amplifying unit is electrically connected to the first node and the second node, respectively, the temperature sensor is electrically connected to the power supply end and the first node, respectively, the first resistor is electrically connected to the power supply end and the second node, respectively, the second resistor is electrically connected to the first node and the third node, respectively, the third resistor is electrically connected to the third node and the second node, and the third node is grounded.

20. The display substrate according to any one of claims 4, 5, 7, 8, 10-16, wherein: The detection circuit includes a fourth resistor, a second amplifying unit, a second analog-to-digital conversion unit and a second processing unit; the second analog-to-digital conversion unit is electrically connected to the second amplifying unit and the second processing unit respectively; the temperature sensor is electrically connected to the fourth node and the power supply terminal respectively, the fourth resistor is electrically connected to the fourth node and the ground respectively, the fourth node is electrically connected to one of the input terminals of the second amplifying unit, and the other input terminal of the second amplifying unit is electrically connected to the reference voltage terminal.

21. A display device, wherein: include: The display substrate according to any one of claims 1 to 20, a counter substrate arranged opposite to the display substrate, and a liquid crystal layer located between the display substrate and the counter substrate.

22. The display device according to claim 21, wherein The opposing substrate further includes a plurality of filter portions arranged in an array, and a light shielding portion provided around each of the filter portions; the orthographic projection of the temperature sensor on the substrate completely falls within the region of the orthographic projection of the light shielding portion on the substrate.

23. A temperature detection method, applied to the display substrate according to any one of claims 1 to 20, wherein: include: placing the display substrate at an initial temperature, and obtaining a first resistance value of the temperature sensor through the detection circuit; obtaining a second resistance value of the temperature sensor at a test temperature through the detection circuit; determining the temperature change according to a correspondence between the first resistance value, the second resistance value, and the temperature change; A target temperature value corresponding to the test temperature is determined according to the initial temperature and the temperature change, and the target temperature value is used as a current temperature value of the display substrate at a position corresponding to the temperature sensor.

24. The method of claim 23, wherein: The determining the temperature change according to the correspondence between the first resistance value, the second resistance value, and the temperature change includes: determining a resistance change of the second resistance value compared to the first resistance value; The temperature variation is determined according to a corresponding relationship between the resistance variation and the temperature variation.

25. The method of claim 23, wherein: The determining the temperature change according to the correspondence between the first resistance value, the second resistance value, and the temperature change includes: determining a resistance change rate of the second resistance value compared to the first resistance value; The temperature change amount is determined according to the corresponding relationship between the resistance change rate and the temperature change amount.

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