Display device and method for manufacturing same

Abstract

A display area (DA) of an organic EL display device (1) is provided with connection wiring (38) for connecting an organic EL element (60) and a pixel circuit (PC). The connection wiring includes a plurality of partial wires (380) made of a transparent conductive material. The partial wires are alternately laminated with organic insulating films (50a) to constitute a multilayer wiring part (MP). The organic EL element includes a first electrode (61) provided in the multilayer wiring part, and an EL layer (65) and a second electrode (67) provided in order on the first electrode. Between the first electrode and the EL layer of the prescribed organic EL element, optical path length adjustment layers (62, 63) are formed in the same layer as that in which the partial wires are formed; the optical path length adjustment layers (62, 63) are made of the same material as that of which the partial wires are made.

Description

Display device and manufacturing method thereof

[0001] The present disclosure relates to a display device and a manufacturing method thereof.

[0002] 2. Description of the Related Art In recent years, organic electroluminescence (EL) display devices using organic electroluminescence (EL) elements have been put to practical use.

[0003] Known organic EL elements incorporated into organic EL display devices have a microcavity structure, which is a structure in which the optical path length (optical distance) between the light-emitting layer of the organic EL layer that emits light and the reflective portion of the electrode in the organic EL element is adjusted to the peak wavelength of the light to be extracted, thereby resonating light of a specific wavelength and extracting light with high color purity.

[0004] The microcavity structure of an organic EL element is realized by adjusting the thickness of a non-emissive layer, such as a hole transport layer, located between the emissive layer and the electrode in the organic EL layer. An example of such a microcavity structure is disclosed in Patent Document 1.

[0005] Japanese Patent Application Laid-Open No. 2022-041886

[0006] In the manufacture of organic EL display devices, when the organic EL layer is formed using a coating method such as an inkjet method, the thickness of the non-light-emitting layer constituting the organic EL layer tends to vary considerably, making it difficult to adjust the optical path length between the light-emitting layer and the reflective portion of the electrode within a suitable range in accordance with the peak wavelength of light desired to be extracted from the organic EL element, and making it difficult to realize a microcavity structure.

[0007] Therefore, it is conceivable to provide an optical path length adjustment layer made of a transparent conductive material having optical transparency between the organic EL layer and the electrode using a film formation process that allows easy thickness adjustment, and to adjust the optical path length between the light-emitting layer and the reflective portion of the electrode within a suitable range using the optical path length adjustment layer. However, adding the process of forming the optical path length adjustment layer to the existing process for manufacturing organic EL display devices would increase manufacturing costs.

[0008] An object of the present disclosure is to realize a microcavity structure in a light-emitting element while suppressing manufacturing costs in a display device in which an EL layer of the light-emitting element is formed using a coating method.

[0009] The present disclosure relates to a display device. The display device according to the present disclosure has a display area consisting of a plurality of unit pixels. The display area includes a plurality of light-emitting elements corresponding to the plurality of unit pixels, pixel circuits for controlling light emission from the light-emitting elements, and connection wiring for connecting the pixel circuits to the light-emitting elements. The connection wiring includes a plurality of partial wirings formed in different layers with an organic insulating film interposed therebetween. The partial wirings are formed of a light-transmitting transparent conductive material and are alternately stacked with the organic insulating film to form a multilayer wiring section. The light-emitting elements include a first electrode provided in the multilayer wiring section, an electroluminescent layer provided on the first electrode, and a second electrode overlapping the first electrode with the electroluminescent layer interposed therebetween. A light-transmitting optical path length adjustment layer is provided between the first electrode and the electroluminescent layer in a given light-emitting element. The optical path length adjustment layer is formed in the same layer and made of the same material as the partial wirings, which are provided above the first electrode.

[0010] According to the display device according to the present disclosure, in a display device in which the EL layer of the light-emitting element is formed by using a coating method, it is possible to realize a microcavity structure in the light-emitting element while suppressing manufacturing costs.

[0011] FIG. 1 is a plan view illustrating a schematic configuration of an organic EL display device according to an embodiment. FIG. 2 is a cross-sectional view of the organic EL display device taken along line II-II in FIG. 1. FIG. 3 is a plan view illustrating pixels and various wirings constituting a first display region of the organic EL display device according to an embodiment. FIG. 4 is a cross-sectional view of the organic EL display device taken along line IV-IV in FIG. 3. FIG. 5A is a cross-sectional view illustrating a stacked structure of red EL elements. FIG. 5B is a cross-sectional view illustrating a stacked structure of green EL elements. FIG. 5C is a cross-sectional view illustrating a stacked structure of blue EL elements. FIG. 6 is an equivalent circuit diagram illustrating a pixel circuit. FIG. 7 is a plan view illustrating a schematic configuration of a second display region and its periphery of the organic EL display device according to an embodiment. FIG. 8 is a plan view illustrating a main part of the second display region of the organic EL display device according to an embodiment. FIG. 9A is a cross-sectional view of a main part including red EL elements of the organic EL display device taken along line IX-IX in FIG. 8. FIG. 9B is a cross-sectional view corresponding to FIG. 9 of a main part including green EL elements of the organic EL display device. 9C is a cross-sectional view corresponding to FIG. 9 of a main part including a blue EL element of an organic EL display device. FIG. 10 is a cross-sectional view showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 11 is a cross-sectional view showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 12 is a cross-sectional view showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 13A is a cross-sectional view corresponding to FIG. 9A showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 13B is a cross-sectional view corresponding to FIG. 9B showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 13C is a cross-sectional view corresponding to FIG. 9C showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 14A is a cross-sectional view corresponding to FIG. 9A showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 14B is a cross-sectional view corresponding to FIG. 9B showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 14C is a cross-sectional view corresponding to FIG. 9C showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 14A is a cross-sectional view corresponding to FIG. 9A showing a part of a manufacturing process for an organic EL display device of an embodiment. FIG. 14B is a cross-sectional view showing a part of the manufacturing process of the organic EL display device according to the embodiment, corresponding to FIG. 9B.14C is a cross-sectional view corresponding to FIG. 9C , showing a part of the manufacturing process of the organic EL display device of the embodiment. FIG. 16 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 2. FIG. 17 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 2. FIG. 18 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 2. FIG. 19 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 2. FIG. 20 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 2. FIG. 21 is a cross-sectional view corresponding to FIG. 9A of the organic EL display device of Modification 3. FIG. 22 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 3. FIG. 23 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 3. FIG. 24 is a cross-sectional view showing a part of the manufacturing process of the organic EL display device of Modification 3. FIG. 25 is a cross-sectional view corresponding to FIG. 4 of the organic EL display device of Modification 4. FIG. 26A is a cross-sectional view corresponding to FIG. 9A of the organic EL display device of Modification 4. FIG. 26B is a cross-sectional view corresponding to FIG. 9A of the organic EL display device of Modification 4. FIG. 26C is a cross-sectional view of the organic EL display device of the fourth modification, which corresponds to FIG. 9A.

[0012] Exemplary embodiments will be described in detail below with reference to the drawings. In the following embodiments, an organic EL display device will be described as an example of a display device according to the present disclosure. Note that the drawings are intended to conceptually explain the technology of the present disclosure. Therefore, the drawings may exaggerate or simplify dimensions, ratios, or numbers to facilitate understanding of the technology of the present disclosure.

[0013] In the following embodiments, the term "first direction" refers to the horizontal direction of the display device in a predetermined orientation when in use. The term "second direction" refers to the direction perpendicular to the first direction, that is, the vertical direction of the screen when in use when the display device is in a predetermined orientation when in use. A row of components such as subpixels refers to a horizontal arrangement of multiple components in a row in the first direction. A column of components such as subpixels refers to a vertical arrangement of multiple components in a row in the second direction.

[0014] In the following embodiments, when a component such as a film, layer, or element is provided or formed on another component such as another film, layer, or element, it does not only mean that the other component exists directly on top of the other component, but also includes cases where a component such as a film, layer, or element other than the one component is interposed between the two components.

[0015] In the following embodiments, a description that a certain component is connected to another component means that the components are electrically connected unless otherwise specified. This description not only means a direct connection, but also an indirect connection via other components, within the scope of the spirit of the technology of the present disclosure. This description also includes a case where another component is integrated with a certain component, that is, a part of a certain component constitutes the other component.

[0016] In the following embodiments, a description that a certain component is in the same layer as another component means that the certain component is formed in the same process as the other component. A description that a certain component is a lower layer than the other component means that the certain component is deposited in an earlier process than the other component or is formed from a film deposited in an earlier process. A description that a certain component is an upper layer than the other component means that the certain component is deposited in a later process than the other component or is formed from a film deposited in a later process.

[0017] In the following embodiments, a description that a certain component is identical to or equivalent to another component does not mean only a state in which the certain component and the other component are completely identical or completely equivalent, but also a state in which the certain component and the other component are substantially identical or substantially equivalent, such as fluctuating within the range of manufacturing variations or tolerances.

[0018] The organic EL display device 1 of this embodiment is used as a display for a mobile device such as a multi-function phone called a smartphone or a tablet terminal. The organic EL display device 1 may also be used as a display for various other devices such as a personal computer (PC) or a television set.

[0019] --Configuration of Organic EL Display Device-- The organic EL display device 1 is a display device that uses organic EL elements 60, also known as OLEDs (Organic Light Emitting Diodes). The organic EL display device 1 is combined with a camera 3 to form a display device with an in-camera that can capture the front side of the screen with the camera 3. The organic EL display device 1 employs an active matrix drive system and is configured to provide a full-color display. As shown in FIGS. 1 and 2, the organic EL display device 1 has a display area DA and a frame area FA.

[0020] The display area DA is an area for displaying an image and constitutes a screen. The display area DA is provided, for example, in a rectangular shape. The display area DA may be a substantially rectangular shape, such as a shape with at least one arc-shaped side, a shape with at least one arc-shaped corner, or a shape with a notch on at least one side, or may be any other shape.

[0021] As shown in Fig. 3, the display area DA is composed of a plurality of pixels PX. The plurality of pixels PX are arranged in a matrix. Each pixel PX is composed of three sub-pixels SP. The sub-pixels SP are an example of a unit pixel. The three sub-pixels SP are a red sub-pixel SPr that emits red light, a green sub-pixel Spg that emits green light, and a blue sub-pixel SPg that emits blue light. These three sub-pixels SPr, SPg, and SPg are arranged, for example, in a striped pattern.

[0022] A plurality of organic EL elements 60 and a plurality of pixel circuits PC are provided in the display area DA. The plurality of organic EL elements 60 are provided corresponding to a plurality of sub-pixels SP. Each organic EL element 60 constitutes a sub-pixel SP. The pixel circuit PC is basically a circuit for each sub-pixel, and controls the light emission of the organic EL element 60. Corresponding organic EL elements 60 and pixel circuits PC are connected by connection wiring 38, which will be described later.

[0023] 1 and 2 , the camera 3 is disposed on the rear side of the substrate layer 10 constituting the organic EL display device 1, at a position overlapping the display area DA in a plan view. The camera 3 is an example of an electronic component that utilizes light. The camera 3 has an image sensor such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor). The camera 3 is installed inside a housing (not shown) that houses the organic EL display device 1.

[0024] The display area DA has a first display area DA1 and a second display area DA2. The first display area DA1 occupies the majority of the display area DA. The second display area DA2 is provided inside the first display area DA1. The second display area DA2 includes a multilayer wiring section MP (described later) and transmits light used by the camera 3. The second display area DA2 is provided, for example, in a rectangular shape on the outer periphery of the display area DA (the upper side in the example shown in FIG. 1). The second display area DA2 may be circular, elliptical, or another shape.

[0025] The frame area FA is an area constituting a non-display portion other than the screen. The frame area FA is provided around the display area DA in, for example, a rectangular frame shape. The frame area FA may have a frame shape other than a rectangle. The frame area FA includes a terminal portion TP and a bent portion BP. The terminal portion TP is a portion for connecting to an external circuit such as a display control circuit (source driver). The terminal portion TP is provided near the outer edge of a portion constituting one side of the frame area FA along the first direction Dx, and extends along that side.

[0026] The bending portion BP is provided between the terminal portion TP and the display area DA in the frame area FA. The bending portion BP is a portion that is bent around an axis extending in the first direction Dx. The bending portion BP extends horizontally across the entire frame area FA in the first direction Dx. In the bending portion BP, the inorganic insulating film included in the circuit element layer 20 is removed, resulting in higher flexibility than other portions.

[0027] The frame area FA of the organic EL display device 1 is bent at a bending portion BP by, for example, about 180 degrees to form a U-shape (shown by a two-dot chain line in FIG. 2 ). As a result, a terminal portion TP is disposed on the rear side of the organic EL display device 1. The terminal portion TP has a plurality of terminals (not shown). A wiring board CB such as an FPC (Flexible Printed Circuit) is connected to the terminal portion TP.

[0028] A driving circuit DC is provided in the frame area FA. The driving circuit DC is arranged in a portion of the frame area FA that forms a side (each of the left and right sides in FIG. 1 ) adjacent to the side on which the terminal portions TP are provided. The driving circuit DC is monolithically formed as part of the circuit element layer 20. The driving circuit DC includes a gate driver and an emission driver.

[0029] In addition, the frame area FA is provided with a first frame wiring 31 (for convenience, indicated by diagonal hatching from left to right in FIG. 1 ) and a second frame wiring 32 (for convenience, indicated by diagonal hatching from right to left in FIG. 1 ). The first frame wiring 31 and the second frame wiring 32 are power supply trunk lines for applying voltages (ELVDD, ELVSS) to the organic EL elements 60, respectively.

[0030] The first frame wiring 31 is provided to extend in the first direction Dx between the display area DA and the terminal portion TP. Portions extending to the terminal portion TP are provided on both sides of the first frame wiring 31 in the first direction Dx. A high-level power supply voltage (ELVDD) is supplied to the first frame wiring 31 at the terminal portion TP via the wiring board CB.

[0031] The second frame wiring 32 is provided in a substantially C-shape so as to surround the first frame wiring 31 and the display area DA. Both ends of the second frame wiring 32 extend to the terminal portion TP along the first frame wiring 31. A low-level power supply voltage (ELVSS) is supplied to the second frame wiring 32 at the terminal portion TP via the wiring board CB.

[0032] A plurality of lead-out wirings 33 are further provided in the frame area FA. Each of the lead-out wirings 33 is led from the display area DA through a bending portion BP to a terminal portion TP. Each lead-out wiring 33 is connected to a source wiring 37 on the display area DA side and extends to pass under the first frame wiring 31. An end of each lead-out wiring 33 located at the terminal portion TP and each end of the first frame wiring 31 and the second frame wiring 32 each form a terminal at the terminal portion TP.

[0033] 7, the layout of the organic EL elements 60 and the pixel circuits PC differs between the first display area DA1 and the second display area DA2. In the second display area DA2, the various wirings 30 extend irregularly. FIG. 7 schematically illustrates the layout of the organic EL elements 60 and the pixel circuits PC in the second display area DA2 and the surrounding first display area DA1.

[0034] 7, for convenience, the organic EL elements 60 are represented by circular symbols, and the pixel circuits PC are represented by rectangular symbols. The red EL elements 60R are represented by diagonal hatching slanting upward to the left, the green EL elements 60G are represented by dotted hatching, and the blue EL elements 60B are represented by diagonal hatching slanting upward to the right. For convenience, the gate wiring 34 and the light-emission control wiring 35 are represented by dashed lines as a single representative wiring (first metal wiring 30X), and the source wiring 37 and the power supply wiring 36 are represented by dashed lines as a single representative wiring (second metal wiring 30Y).

[0035] 4, in the first display area DA1, the pixel circuits PC are arranged at locations that overlap the corresponding organic EL elements 60 in a plan view and in the vicinity thereof. This is represented in Fig. 7 by the organic EL elements 60 and the pixel circuits PC overlapping each other. That is, in the first display area DA1, each pixel circuit PC is provided at a position that overlaps with the sub-pixel SP formed by the corresponding organic EL element 60.

[0036] 7 , in the second display area DA2, the pixel circuits PC are arranged at locations spaced apart from the corresponding organic EL elements 60 so as not to overlap them in a plan view. In the second display area DA2, the area in which the organic EL elements 60 constituting each sub-pixel SP are arranged is separated from the area in which the pixel circuits PC corresponding to each organic EL element 60 are arranged. The second display area DA2 includes the light-emitting element area EA, which is the former area, and the circuit arrangement area CA, which is the latter area.

[0037] The light-emitting element area EA is provided in the central portion of the second display area DA2. A plurality of organic EL elements 60 are arranged in the light-emitting element area EA. Specifically, a plurality of sets of organic EL elements 60 are provided in the light-emitting element area EA, with two adjacent organic EL elements 60 constituting one set. The two organic EL elements 60 in each set are arranged side by side in the first direction Dx. The light emitted by these two organic EL elements 60 has the same color.

[0038] The circuit arrangement area CA is provided around the light-emitting element area EA. A plurality of pixel circuits PC are provided in the circuit arrangement area CA. Each pixel circuit PC controls the light emission of an organic EL element 60 arranged in the light-emitting element area EA. A pixel circuit PC in the circuit arrangement area CA is provided for each set of organic EL elements 60, and commonly controls the light emission of the two organic EL elements 60 in that set.

[0039] The two organic EL elements 60 constituting a set and the pixel circuit PC are connected by a connection wiring 38 (second connection wiring 38B). The connection wiring 38 (second connection wiring 38B) is configured to include a plurality of partial wirings 380 formed in different layers with an organic insulating film 50a interposed therebetween (see FIGS. 9A to 9B). The plurality of partial wirings 380 are formed from a transparent conductive material that is optically transparent. The partial wirings 380 are alternately stacked with the organic insulating film 50a to form a multilayer wiring section MP. The multilayer wiring section MP is provided across the entire display area DA.

[0040] Each of the first metal wirings 30X corresponding to the plurality of subpixels SP in the second display region DA2 extends outside the group of organic EL elements 60 arranged in the light-emitting element region EA. Each of the first metal wirings 30X extends through the circuit arrangement region CA, avoiding the light-emitting element region EA. Furthermore, each of the second metal wirings 30Y corresponding to the plurality of subpixels SP in the second display region DA2 extends outside the group of organic EL elements 60 arranged in the light-emitting element region EA.

[0041] In this way, in the second display area DA2, the first metal wiring 30X (gate wiring 34, light-emitting control wiring 35), the second metal wiring 30Y (source wiring 37, power supply wiring 36), and the connection wiring 38 (second connection wiring 38B) are designed so as not to reduce the transmittance of light from the front side to the back side in the light-emitting element area EA as much as possible, and thus to ensure as much light as possible to be used by the camera 3.

[0042] <Layer Structure of Organic EL Display Device> As shown in FIG. 2 , the organic EL display device 1 includes a substrate layer 10 , a circuit element layer 20 , and a sealing film 80 .

[0043] <Substrate Layer> The substrate layer 10 is a layer that forms the base of the organic EL display device 1. The substrate layer 10 is an example of a substrate. The substrate layer 10 is flexible. The substrate layer 10 is made of an organic resin material such as polyimide resin, polyamide resin, or epoxy resin. A protective film 11 that is optically transparent (in this example, this means the property of transmitting visible light; the same applies hereinafter) is attached to the back surface of the substrate layer 10.

[0044] <Circuit Element Layer> The circuit element layer 20 is provided on the substrate layer 10. In addition to the drive circuit DC described above, the circuit element layer 20 includes various wirings 30, a plurality of pixel circuits PC, a planarization film 50, a plurality of organic EL elements (organic electroluminescence elements) 60, and an edge cover 70. A base coat film (not shown) is provided over the entire surface of the substrate layer 10. The various wirings 30, the pixel circuits PC, the planarization film 50, the organic EL elements 60, and the edge cover 70 are provided on the base coat film.

[0045] <Wiring> The various wirings 30 include the first frame wiring 31, the second frame wiring 32, and the plurality of lead-out wirings 33 described above, as well as the plurality of gate wirings 34, the plurality of light-emission control wirings 35, the plurality of power supply wirings 36, and the plurality of source wirings 37 shown in Fig. 3, and the plurality of connection wirings 38 shown in Fig. 4, 7, and 8. The gate wirings 34, the light-emission control wirings 35, the power supply wirings 36, the source wirings 37, and the connection wirings 38 are provided in the display area DA.

[0046] Each of the gate lines 34 transmits a gate signal to the pixel circuit PC. The gate lines 34 are spaced apart from one another in the second direction Dy and extend parallel to one another in the first direction Dx. One gate line 34 is provided for each row of sub-pixels SP. Each gate line 34 is drawn out into the frame area FA and connected to a gate driver of the drive circuit DC.

[0047] Each of the plurality of light-emission control wirings 35 is a wiring that transmits an emission signal to the pixel circuit PC. The plurality of light-emission control wirings 35 are arranged at intervals from one another in the second direction Dy and extend parallel to one another in the first direction Dx. One light-emission control wiring 35 is provided for each row of sub-pixels SP. Each light-emission control wiring 35 is drawn out into the frame area FA and connected to an emission driver of the drive circuit DC.

[0048] Each of the multiple power supply wirings 36 applies a predetermined high-level power supply voltage (ELVDD) to the pixel circuits PC. The multiple power supply wirings 36 are arranged at intervals in the first direction Dx and extend parallel to each other in the second direction Dy. A power supply wiring 36 is provided for each column of sub-pixels SP. Each power supply wiring 36 is drawn out to the frame area FA on the terminal portion TP side and connected to the first frame wiring 31.

[0049] Each of the multiple source lines 37 transmits a source signal to the pixel circuit PC. The multiple source lines 37 are spaced apart from one another in the first direction Dx and extend parallel to one another in the second direction Dy. A source line 37 is provided for each column of subpixels SP. Each source line 37 is drawn out to a terminal portion TP as a drawing line 33 and connected to a display control circuit (source driver) via a wiring substrate CB.

[0050] 4, 7, and 8, the plurality of connection wirings 38 are wirings that connect corresponding pixel circuits PC (strictly speaking, predetermined TFTs 40 that constitute the pixel circuits PC) to the organic EL elements 60. One end of each connection wiring 38 is connected to the pixel circuit PC (TFT 40), and the other end of each connection wiring 38 is connected to the organic EL element 60. Each of these connection wirings 38 is located inside the planarization film 50. The specific configuration of the connection wirings 38 will be described in detail later.

[0051] <Pixel Circuit> A pixel circuit PC is provided for each individual sub-pixel SP (organic EL element 60) in the first display area DA1 (see FIG. 3), and for each two sub-pixels SP (organic EL element 60) that commonly control light emission in the second display area DA2 (see FIG. 7). Gate wiring 34, light emission control wiring 35, and power supply wiring 36 are connected to the pixel circuit PC. As shown in FIG. 4, the pixel circuit PC includes a plurality of TFTs 40 and a capacitor 45.

[0052] The plurality of TFTs 40 are a first TFT 40A, a second TFT 40B, and a third TFT 40C. For example, the first TFT 40A, the second TFT 40B, and the third TFT 40C are all configured as top-gate TFTs. Although not shown, the first TFT 40A, the second TFT 40B, and the third TFT 40C each include a gate electrode, a first terminal electrode, and a second terminal electrode.

[0053] At least one capacitor 45 is provided for each subpixel SP. Although not shown, the capacitor 45 includes a first capacitance electrode and a second capacitance electrode. The first capacitance electrode and the second capacitance electrode overlap each other via an insulating film (not shown) included in the circuit element layer 20. The first capacitance electrode and the second capacitance electrode may each be formed by a part of another electrode or wiring.

[0054] The pixel circuit PC is configured as an equivalent circuit shown in Fig. 6. In the equivalent circuit shown in Fig. 6, the first terminal electrode of the TFT 40 is indicated by "Na", the second terminal electrode is indicated by "Nb", the first capacitance electrode of the capacitor 45 is indicated by "Ea", and the second capacitance electrode is indicated by "Eb".

[0055] A gate electrode of the first TFT 40A is connected to the corresponding gate wiring 34. A first terminal electrode of the first TFT 40A is connected to the corresponding source wiring 37. A second terminal electrode of the first TFT 40A is connected to the gate electrode of the corresponding second TFT 40B. A first terminal electrode of the second TFT 40B is connected to the corresponding power supply wiring 36. A second terminal electrode of the second TFT 40B is connected to the first terminal electrode of the corresponding third TFT 40C.

[0056] A gate electrode of the third TFT 40C is connected to the corresponding light emission control wiring 35. A second terminal electrode of the third TFT 40C is connected to the first electrode 61 of the corresponding organic EL element 60. A first capacitance electrode of the capacitor 45 is connected to the power supply wiring 36. A second capacitance electrode of the capacitor 45 is connected to the second terminal electrode of the first TFT 40A and the gate electrode of the second TFT 40B.

[0057] The various wirings and electrodes described above, except for the connection wiring 38, are made of metal materials such as aluminum (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr), titanium (Ti), copper (Cu), etc. These various wirings and electrodes may be made of a single layer film made of the metal material, or may be made of a laminated film made of the metal material.

[0058] 4, the planarization film 50 is formed by laminating a first planarization film 51, a second planarization film 52, a third planarization film 53, and a fourth planarization film 54. The first planarization film 51, the second planarization film 52, the third planarization film 53, and the fourth planarization film 54 are all examples of the organic insulating film 50a, and the planarization film 50 is an example of a laminated organic insulating film.

[0059] The first planarization film 51 is provided so as to cover the plurality of TFTs 40 and the plurality of capacitors 45. The second planarization film 52, the third planarization film 53, and the fourth planarization film 54 are stacked in this order on the first planarization film 51. The first planarization film 51, the second planarization film 52, the third planarization film 53, and the fourth planarization film 54 extend over the entire display area DA.

[0060] The third planarization film 53 and the fourth planarization film 54 are provided above the first electrode 61. A plurality of first openings 53h are formed in the third planarization film 53. The first openings 53h are provided for each organic EL element 60 corresponding to each sub-pixel SP. Each first opening 53h is an opening that penetrates to the first electrode 61 of each organic EL element 60. In this example, the first openings 53h are opened only at locations corresponding to the first electrodes 61 in a plan view.

[0061] A plurality of second openings 54h are formed in the fourth planarization film 54. The second openings 54h are provided for each organic EL element 60 corresponding to each sub-pixel SP. Each second opening 54h is an opening that communicates with the corresponding first opening 53h and opens at a location corresponding to the first electrode 61. In this example, the second openings 54h have the same shape as the first openings 53h and are formed to have the same opening area as the first openings 53h or a larger opening area than the first openings 53h.

[0062] A first opening 53h is located inside each second opening 54h in plan view. Each first opening 53h exposes the first electrode 61 from the third planarization film 53. The surface of the first electrode 61 is located at the bottom of each first opening 53h. Each second opening 54h exposes the first electrode 61 exposed from the third planarization film 53 from the fourth planarization film 54 as well. The first opening 53h and the second opening 54h form an element hole 50h. The element hole 50h is an opening that does not penetrate the planarization film 50, and multiple element holes 50h are formed in the planarization film 50.

[0063] The first planarization film 51, the second planarization film 52, the third planarization film 53, and the fourth planarization film 54 are each made of an organic insulating material and have optical transparency. Photosensitive resin is used as the organic insulating material. Examples of photosensitive resin include organic resin materials such as polyimide resin and acrylic resin, and polysiloxane-based SOG (Spin On Glass) materials.

[0064] 4, the edge cover 70 is provided on the planarization film 50 in the display area DA, in this example, on the surface of the fourth planarization film 54. The edge cover 70 is formed in a lattice shape so as to separate the organic EL elements 60. The edge cover 70 extends between adjacent organic EL elements 60 and is provided so as to define the periphery of the organic EL elements 60 in a planar view.

[0065] The edge cover 70 covers a portion of the connection wiring 38 (fourth partial wiring 384) in the second display area DA2. The edge cover 70 has a light-blocking property (which in this example means the property of blocking visible light; the same applies below). A plurality of third openings 70h are formed in the edge cover 70. The third openings 70h are provided for each organic EL element 60 corresponding to each sub-pixel SP.

[0066] Each third opening 70h is opened at a position corresponding to the first electrode 61 of each organic EL element 60. In this example, the third openings 70h have the same shape as the second openings 54h and are formed to have the same opening area as or a larger opening area than the second openings 54h. The second openings 54h are located inside each third opening 70h in plan view. Each third opening 70h exposes, from the edge cover 70, the first electrode 61 exposed from the third planarization film 53 and the fourth planarization film 54.

[0067] Examples of materials for the edge cover 70 include organic resin materials such as polyimide resin and acrylic resin, and polysiloxane-based SOG materials. A portion of the surface of the edge cover 70 may protrude toward the sealing film 80 to form a plurality of photospacers. The photospacers serve to maintain a distance between the film formation mask used to form the second electrode 67 and the surface of the target to be film-formed.

[0068] <Connection Wiring> The connection wiring 38 includes a first connection wiring 38A shown in Fig. 4 and a second connection wiring 38B shown in Fig. 8. The first connection wiring 38A is the connection wiring 38 located in the first display area DA1. The second connection wiring 38B is the connection wiring 38 located in the second display area DA2. The connection structure of the partial wiring 380 constituting the first connection wiring 38A and the connection structure of the partial wiring 380 constituting the second connection wiring 38B are different from each other.

[0069] The first connection wiring 38A is composed of a first partial wiring 381 and a second partial wiring 382. The second connection wiring 38B is composed of a first partial wiring 381, a second partial wiring 382, ​​a third partial wiring 383, and a fourth partial wiring 384. The second connection wiring 38B may also be composed of the first partial wiring 381, the second partial wiring 382, ​​and the third partial wiring 383.

[0070] The first partial wiring 381, the second partial wiring 382, ​​the third partial wiring 383, and the fourth partial wiring 384 are all examples of the partial wiring 380. The first partial wiring 381, the second partial wiring 382, ​​the third partial wiring 383, and the fourth partial wiring 384 are formed in different layers of the planarization film 50 with individual layers (organic insulating films 50 a) interposed therebetween.

[0071] The first partial wiring 381 is provided in an island shape on the first planarization film 51 and is located below the second planarization film 52. The second partial wiring 382 is provided in an island shape on the second planarization film 52 and is located below the third planarization film 53. The third partial wiring 383 is provided in an island shape on the third planarization film 53 and is located below the fourth planarization film 54. The fourth partial wiring 384 is provided in an island shape on the fourth planarization film 54 and is located below the edge cover 70.

[0072] As shown in FIG. 4 , the first partial wiring 381 constituting the first connection wiring 38A is disposed in a region corresponding to the pixel circuit PC. A first contact hole Ha is formed in the first planarization film 51 for each pixel circuit PC. The first contact hole Ha penetrates to the second terminal electrode of a predetermined TFT 40 (third TFT 40C) or to a wiring connected to that second terminal electrode. The first partial wiring 381 is connected to the predetermined TFT 40 (third TFT 40C) via the first contact hole Ha.

[0073] The second partial wiring 382 constituting the first connection wiring 38A is disposed in a region corresponding to the pixel circuit PC. A second contact hole Hb is formed in the second planarization film 52 for each pixel circuit PC. The second contact hole Hb penetrates to the second partial wiring 382. The second partial wiring 382 is connected to the corresponding first partial wiring 381 via the second contact hole Hb.

[0074] The first partial wiring 381 and the second partial wiring 382 are located in a region overlapping with the corresponding first electrode 61 in a planar view or in the periphery thereof, and are connected to each other in a localized range. As a result, the first connection wiring 38A is drawn from a predetermined TFT 40 (third TFT 40C) onto the second planarization film 52 directly above the TFT 40 or in the periphery thereof, and connects the TFT 40 and the first electrode 61.

[0075] 8 and 9A to 9C, the first partial wiring 381 constituting the second connection wiring 38B is arranged in a portion of the circuit arrangement area CA corresponding to the pixel circuit PC. The first partial wiring 381 is also connected to a predetermined TFT 40 (third TFT 40C) via a first contact hole Ha formed in the first planarization film 51. The second partial wiring 382 constituting the second connection wiring 38B is composed of a first circuit-side wiring 382a and a first element-side wiring 382b.

[0076] The first circuit side wiring 382a is connected to the first partial wiring 381 via a second contact hole Hb formed in the first planarization film 51, and extends from the circuit arrangement area CA to the light emitting element area EA. The first element side wiring 382b is arranged in a portion of the light emitting element area EA closer to the organic EL element 60, and is located in a layer below the first electrode 61. The first element side wiring 382b connects the first electrodes 61 of two organic EL elements 60 that make up one set.

[0077] The third partial wiring 383 is arranged in the light emitting element area EA. A pair of third contact holes Hc is formed in the third planarization film 53 for each pixel circuit PC. One of the third contact holes Hc penetrates to the first circuit side wiring 382a. The other third contact hole Hc penetrates to the first element side wiring 382b. The third partial wiring 383 is composed of a second circuit side wiring 383a and a second element side wiring 383b.

[0078] The second circuit side wiring 383a is arranged on the circuit arrangement area CA side of the light-emitting element area EA. The second circuit side wiring 383a is connected to the first circuit side wiring 382a via one of the third contact holes Hc and extends toward the organic EL element 60. The second element side wiring 383b is arranged on the organic EL element 60 side of the light-emitting element area EA. The second element side wiring 383b is connected to the first element side wiring 382b via the other third contact hole Hc and extends toward the circuit arrangement area CA.

[0079] The fourth partial wiring 384 is arranged in the light-emitting element region EA. A pair of fourth contact holes Hd are formed in the fourth planarization film 54. One of the fourth contact holes Hd penetrates to the second circuit side wiring 383a. The other fourth contact hole Hd penetrates to the second element side wiring 383b. The fourth partial wiring 384 extends to connect between the second circuit side wiring 383a and the second element side wiring 383b. The fourth partial wiring 384 is connected to the second circuit side wiring 383a via one of the fourth contact holes Hd and to the second element side wiring 383b via the other fourth contact hole Hd.

[0080] In the light-emitting element region EA, among the plurality of partial wirings 380 provided in different layers, certain partial wirings 380 that are not connected to each other intersect with each other via the organic insulating film 50a. As shown in FIG. 8 , in this example, in the outer peripheral portion of the light-emitting element region EA, the third partial wiring 383 and the fourth partial wiring 384 intersect with each other in a planar view. A fourth planarization film 54 is interposed at the intersection between the third partial wiring 383 and the fourth partial wiring 384. Furthermore, in a portion other than the outer peripheral portion of the light-emitting element region EA, a layout may be adopted in which two partial wirings 380 selected from the second partial wiring 382, ​​the third partial wiring 383, and the fourth partial wiring 384 intersect with each other in a planar view.

[0081] <Organic EL Elements> As shown in Figures 4 and 9A to 9C, a plurality of organic EL elements 60 are provided inside the planarization film 50 together with the connection wiring 38. The organic EL elements 60 are an example of a light-emitting element. The organic EL elements 60 are configured as a top-emission type. Light emitted by the organic EL elements 60 is extracted to the sealing film 80 side. The light emission of each organic EL element 60 is controlled by the operation of the corresponding pixel circuit PC.

[0082] The organic EL elements 60 are provided in a plurality of types, each emitting a different light color. The plurality of types of organic EL elements 60 include a red EL element 60R, a green EL element 60G, and a blue EL element 60B. Each of the red EL element 60R, the green EL element 60G, and the blue EL element 60B has a microcavity structure.

[0083] The red EL element 60R is provided corresponding to the red sub-pixel SPr. The red EL element 60R emits red light. The peak wavelength of the emitted light from the red EL element 60R is in a predetermined wavelength range corresponding to red light, for example, in the range of 610 nm to 750 nm. The red EL element 60R has a light-emitting layer 65c that emits red light in this wavelength range. The red EL element 60R is an example of a first light-emitting element.

[0084] The green EL element 60G is provided corresponding to the green sub-pixel Spg. The emission color of the green EL element 60G is green. The peak wavelength of the emission color of the green EL element 60G is in a predetermined wavelength range corresponding to green light, for example, in the range of 500 nm to 560 nm, and is shorter than the peak wavelength of the emission color of the red EL element 60R. The green EL element 60G has a light-emitting layer 65c that emits green light in this wavelength range. The green EL element 60G is an example of a second light-emitting element.

[0085] The blue EL element 60B is provided corresponding to the blue sub-pixel SPg. The emission color of the blue EL element 60B is blue. The peak wavelength of the emission color of the blue EL element 60B is in a predetermined wavelength range corresponding to blue light, for example, in the range of 435 nm to 480 nm, and is shorter than the peak wavelength of the emission color of the green EL element 60G. The blue EL element 60B has a light-emitting layer 65c that emits blue light in this wavelength range. The blue EL element 60B is an example of a third light-emitting element.

[0086] As also shown in FIGS. 5A to 5C, the red EL element 60R, the green EL element 60G, and the blue EL element 60B each have a first electrode 61, an EL layer 65, and a second electrode 67 as common components.

[0087] The first electrodes 61 are arranged in a matrix corresponding to the plurality of sub-pixels SP. The first electrodes 61 are individually separated and provided in the multilayer wiring section MP, overlapping the corresponding connection wirings 38. The first electrodes 61 are located below the third planarization film 53 and provided overlapping the second partial wirings 382 (the first element side wirings 382b in the second display area DA2). The first electrodes 61 are connected to a predetermined TFT 40 (the third TFT 40C) via the connection wirings 38. The first electrodes 61 function as an anode and inject holes into the EL layer 65.

[0088] The first electrode 61 has a lower transparent conductive layer 61a, a reflective conductive layer 61b, and an upper transparent conductive layer 61c. The lower transparent conductive layer 61a is provided on the surface of the second partial wiring 382. The reflective conductive layer 61b and the upper transparent conductive layer 61c are stacked in this order on the lower transparent conductive layer 61a. The upper transparent conductive layer 61c is provided on the reflective conductive layer 61b, sandwiching the reflective conductive layer 61b between itself and the lower transparent conductive layer 61a. The lower transparent conductive layer 61a and the upper transparent conductive layer 61c are each optically transparent. The reflective conductive layer 61b is optically reflective. It is preferable to use a conductive material with a large work function for the first electrode 61.

[0089] In this example, the lower transparent conductive layer 61a and the upper transparent conductive layer 61c are made of indium tin oxide (ITO). The lower transparent conductive layer 61a and the upper transparent conductive layer 61c may be made of other transparent conductive materials, such as indium zinc oxide (IZO) or indium gallium zinc oxide (In—Ga—Zn—O). The reflective conductive layer 61b in this example is made of silver (Ag). The reflective conductive layer 61b may be made of other metal materials with light reflectivity, such as a silver alloy, aluminum (Al), or an aluminum alloy.

[0090] The EL layer 65 is provided on each first electrode 61 in the element hole 50h of the planarization film 50 as an upper layer of the multilayer wiring section MP. The EL layer 65 is formed by stacking multiple functional layers, including a light-emitting layer 65c. In this example, the EL layer 65 has, as functional layers, a hole injection layer 65a, a hole transport layer 65b, a light-emitting layer 65c, an electron transport layer 65d, and an electron injection layer 65e. The hole injection layer 65a, the hole transport layer 65b, the light-emitting layer 65c, the electron transport layer 65d, and the electron injection layer 65e are stacked on the first electrode 61 in this order.

[0091] The EL layer 65 of the red EL element 60R overlaps the surface of the first optical path length adjustment layer 62. The EL layer 65 of the green EL element 60G overlaps the surface of the second optical path length adjustment layer 63. The EL layer 65 of the blue EL element 60B overlaps the surface of the first electrode 61. The hole injection layer 65a, the hole transport layer 65b, the light-emitting layer 65c, the electron transport layer 65d, and the electron injection layer 65e are made of known compounds suitable for their respective functions. The EL layer 65 emits light when a current is applied between the first electrode 61 and the second electrode 67.

[0092] The second electrode 67 is provided as a continuous common film spanning multiple subpixels SP, spreading across the entire display area DA. The second electrode 67 covers the edge cover 70 and each EL layer 65, and overlaps each first electrode 61 via the EL layer 65. The second electrode 67 also extends into the frame area FA and is connected to the second frame wiring 32. The second electrode 67 functions as a cathode and injects electrons into the EL layer 65. It is preferable to use a conductive material with a small work function for the second electrode 67.

[0093] Examples of materials for the second electrode 67 include conductive oxides such as indium tin oxide (ITO) and indium zinc oxide (IZO). The material for the second electrode 67 may be a metal such as silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), or ytterbium (Yb). The material for the second electrode 67 may be a metal compound or an alloy. The second electrode 67 may be formed of a single layer film or a laminated film.

[0094] 5A , the red EL element 60R is provided with a first optical path length adjustment layer 62 as an optical path length adjustment layer. That is, the red EL element 60R further has the first optical path length adjustment layer 62 in addition to the first electrode 61, EL layer 65, and second electrode 67 described above. The first optical path length adjustment layer 62 is provided between the first electrode 61 and the EL layer 65. The EL layer 65 of the red EL element 60R is provided overlapping the second optical path length adjustment layer 63 within the second opening 54h.

[0095] The thickness of the first optical path length adjustment layer 62 is set so that light of a wavelength corresponding to the emission color of the light-emitting layer 65c of the red EL element 60R resonates between the reflective conductive layer 61b and the light-emitting layer 65c. The first optical path length adjustment layer 62 is thicker than the second optical path length adjustment layer 63. The first optical path length adjustment layer 62 is formed by stacking more transparent conductive layers 64 than the second optical path length adjustment layer 63. The first optical path length adjustment layer 62 is formed by two transparent conductive layers 64: a lower constituent layer 62a and an upper constituent layer 62b.

[0096] The lower component layer 62a and the upper component layer 62b are stacked in this order on the first electrode 61. The lower component layer 62a and the upper component layer 62b are each optically transparent and are formed in the same layer and from the same material as the partial wiring 380 provided above the first electrode 61. The lower component layer 62a is formed in the same layer and from the same material (indium tin oxide (ITO)) as the third partial wiring 383. The upper component layer 62b is formed in the same layer and from the same material (indium tin oxide (ITO)) as the fourth partial wiring 384.

[0097] 4 and 9A , the lower component layer 62a is provided over the entire inner area of ​​the first opening 53h in the third planarization film 53, and extends to the outer periphery of the first opening 53h on the third planarization film 53. The upper component layer 62b is provided over the entire inner area of ​​the second opening 54h in the fourth planarization film 54, and extends to the outer periphery of the second opening 54h on the fourth planarization film 54.

[0098] 5B , the green EL element 60G is provided with a second optical path length adjustment layer 63 as an optical path length adjustment layer. That is, the green EL element 60G further includes a second optical path length adjustment layer 63 as an optical path length adjustment layer in addition to the first electrode 61, EL layer 65, and second electrode 67 described above. The second optical path length adjustment layer 63 is provided between the first electrode 61 and the EL layer 65. The EL layer 65 of the green EL element 60G is provided overlapping the second optical path length adjustment layer 63 within the second opening 54h. The second optical path length adjustment layer 63 is made of a single transparent conductive layer 64 and is light-transmitting.

[0099] The thickness of the second optical path length adjustment layer 63 is set so that light of a wavelength corresponding to the emission color of the light-emitting layer 65c of the green EL element 60G resonates between the reflective conductive layer 61b and the light-emitting layer 65c. The second optical path length adjustment layer 63 is formed in the same layer and from the same material as the partial wiring 380 provided above the first electrode 61. The second optical path length adjustment layer 63 is formed in the same layer and from the same material (indium tin oxide (ITO)) as the third partial wiring 383. The second optical path length adjustment layer 63 is provided throughout the inside of the first opening 53h and extends to the outer periphery of the first opening 53h.

[0100] 5C , the blue EL element 60B does not have an optical path length adjustment layer. The EL layer 65 of the blue EL element 60B is provided overlapping the first electrode 61 within the first opening 53h. The thickness of the upper transparent conductive layer 61c of the first electrode 61 is set so that light of a wavelength corresponding to the emission color of the light-emitting layer 65c of the blue EL element 60B resonates between the reflective conductive layer 61b and the light-emitting layer 65c. The thickness of the upper transparent conductive layer 61c is the same for the red EL element 60R, the green EL element 60G, and the blue EL element 60B.

[0101] 4, the sealing film 80 is provided on the circuit element layer 20. The sealing film 80 covers and seals the organic EL elements 60, protecting each organic EL element 60 (particularly the EL layer 65) from moisture, oxygen, and the like. The sealing film 80 is provided over the entire display area DA and extends into the frame area FA. The sealing film 80 has a first inorganic layer 81, an organic layer 82, and a second inorganic layer 83.

[0102] The first inorganic layer 81 is provided so as to cover the second electrode 67. The organic layer 82 is provided on the first inorganic layer 81. The second inorganic layer 83 is provided on the organic layer 82. The first inorganic layer 81 and the second inorganic layer 83 extend further to the outer periphery of the frame area FA than the organic layer 82 and overlap each other in the outer portion of the frame area FA. The organic layer 82 extends into the display area DA and its outer periphery, and is enclosed by the first inorganic layer 81 and the second inorganic layer 83.

[0103] The first inorganic layer 81, the organic layer 82, and the second inorganic layer 83 are all optically transparent. The first inorganic layer 81 and the second inorganic layer 83 are each made of an inorganic insulating material such as silicon oxide, silicon nitride, or silicon oxynitride. The organic layer 82 is made of an organic insulating material such as acrylic resin, epoxy resin, silicone resin, polyurea resin, parylene resin, polyimide resin, or polyamide resin.

[0104] —Operation of Organic EL Display Device— In the organic EL display device 1, in each subpixel SP, the corresponding light-emission control wiring 35 is first selected, and an emission signal indicating an inactive state is input to the third TFT 40C via the light-emission control wiring 35. This turns the third TFT 40C into an off state. When the third TFT turns into an off state, the organic EL element 60 turns into a non-emitting state.

[0105] Then, the gate wiring 34 corresponding to the organic EL element 60 in the non-emitting state is selected, and a gate signal indicating an active state is input to the first TFT 40A via the gate wiring 34. This turns the first TFT 40A on. When the first TFT 40A turns on, a predetermined voltage corresponding to a source signal transmitted via the source wiring 37 is applied to the second TFT 40B and written to the capacitor 45.

[0106] Then, the corresponding light-emitting control wiring 35 is selected, and an emission signal indicating an active state is input to the third TFT 40C. This turns on the third TFT 40C. When the third TFT 40C turns on, a drive current corresponding to the voltage applied to the second TFT 40B is supplied from the power supply wiring 36 to the organic EL element 60.

[0107] When a driving current is supplied to the organic EL element 60, the EL layer 65 emits light by recombining holes and electrons in the light-emitting layer 65c. At this time, in each organic EL element 60, the light emitted by the EL layer 65 (strictly speaking, the light-emitting layer 65c) is partially reflected by the reflective conductive layer 61b of the first electrode 61, and resonates with the reflected light, thereby improving color purity.

[0108] In this way, images are displayed in the organic EL display device 1 by the organic EL elements 60 emitting light at a luminance corresponding to the drive current in each sub-pixel SP. Note that even if the first TFT 40A is turned off, the light emission of the organic EL elements 60 is maintained for each sub-pixel SP until a gate signal for the next frame is input, because the voltage applied to the gate electrode of the second TFT 40B is held by the capacitor 45.

[0109] Furthermore, in the organic EL display device 1, external light passes from the front side to the back side in the second display area DA2. When a user performs an operation to take a photograph, the camera 3 receives the external light that has passed through the second display area DA2 with an image sensor and converts it into an electrical signal. As a result, in the organic EL display device 1, the camera 3 takes an image with the area in front of the screen as the target (subject side).

[0110] -Method for manufacturing organic EL display device- To manufacture the organic EL display device 1, first, an organic resin material is applied to the surface of the glass substrate 100 and then baked. In this way, a substrate layer 10 is formed on the surface of the glass substrate 100.

[0111] Next, the circuit element layer 20 and the sealing film 80 are formed in sequence on the substrate layer 10 using a known film formation method such as plasma CVD (Chemical Vapor Deposition), sputtering, or vacuum deposition, a known coating method such as spin coating or slit coating, or a known patterning technique such as photolithography.

[0112] Then, the rear surface of the substrate layer 10 is irradiated with laser light from the glass substrate 100 side, for example, to peel the glass substrate 100 from the substrate layer 10. Next, a polarizing plate and a cover panel are attached to the surface of the sealing film 80. Furthermore, a wiring substrate CB is connected to the terminal portion TP. Thereby, a display control circuit (source driver) is mounted on the panel that constitutes the organic EL display device 1.

[0113] In this manner, the organic EL display device 1 can be manufactured.

[0114] <Process of Forming Circuit Element Layer> In the process of forming the circuit element layer 20, first, a plurality of TFTs 40 and capacitors 45 are formed on the substrate layer 10 on the surface of the glass substrate 100.

[0115] Next, a photosensitive resin such as an acrylic resin is applied by a known application method onto the substrate on which the plurality of TFTs 40 and capacitors 45 are fabricated, forming a photosensitive resin coating film. In this example, a positive photosensitive resin is used as the photosensitive resin. Next, the photosensitive resin coating film is pre-baked, exposed to light, developed, and post-baked. By doing so, a first planarization film 51 having first contact holes Ha is formed on the substrate.

[0116] Next, a titanium film (Ti film) or titanium alloy film (Ti alloy film), an aluminum (Al film) or aluminum alloy film (Al alloy film), and a titanium film (Ti film) or titanium alloy film (Ti alloy film) are formed in this order by, for example, sputtering on the substrate on which the first planarization film 51 has been formed, thereby forming a stacked metal film 101 on the substrate so as to cover the first planarization film 51, as shown in the upper diagram of FIG.

[0117] Next, the stacked metal film 101 is patterned by photolithography to form a first partial wiring 381, as shown in the lower diagram of Fig. 10. At this time, although not shown, a part or all of at least one of the first frame wiring 31 and the second frame wiring 32 may be formed from the same stacked metal film 101. In addition, a part of the lead wiring 33 may be formed from the same stacked metal film 101.

[0118] Next, a photosensitive resin such as an acrylic resin is applied by a known application method onto the substrate on which the first partial wiring 381 and the like have been formed, to form a photosensitive resin coating film. In this example, a positive photosensitive resin is used as the photosensitive resin. Next, the photosensitive resin coating film is pre-baked, exposed to light, developed, and post-baked. By doing so, a second planarization film 52 having second contact holes Hb is formed on the substrate.

[0119] Next, an indium tin oxide film (ITO film) is formed by, for example, sputtering on the substrate on which the second planarization film 52 has been formed. As a result, a first transparent conductive film 102 is formed so as to cover the second planarization film 52, as shown in the upper diagram of Fig. 11. Subsequently, the first transparent conductive film 102 is patterned by photolithography, thereby forming second partial wiring 382 on the substrate, as shown in the lower diagram of Fig. 11.

[0120] Next, the substrate on which the second partial wiring 382 has been formed is subjected to an annealing treatment, for example, at a temperature of about 200° C. to 250° C. for 30 to 120 minutes. This annealing treatment crystallizes the second partial wiring 382, ​​thereby improving the conductivity and optical transparency of the second partial wiring 382. Furthermore, by being crystallized, the second partial wiring 382 becomes resistant to PAN-based etching solutions.

[0121] Next, an indium tin oxide film (ITO film) 103a, a silver film (Ag film) 103b, and an indium tin oxide film (ITO film) 103c are formed in this order on the annealed substrate by, for example, sputtering. As a result, a stacked conductive film 103 is formed so as to cover the second planarization film 52 and the second partial wiring 382, ​​as shown in the upper diagram of FIG. 12 . Subsequently, the stacked conductive film 103 is patterned by photolithography to form a first electrode 61 on the substrate, as shown in the lower diagram of FIG. 12 . The process of forming this first electrode 61 corresponds to the first process.

[0122] When patterning the laminated conductive film 103, a resist is formed in the area where the first electrode 61 is to be formed, and then wet etching is performed using the resist as a mask. In this wet etching, a PAN-based etching solution, which is a mixture of phosphoric acid, nitric acid, and acetic acid, is used as the etching solution. At this time, the second partial wiring 382 is exposed to the PAN-based etching solution, but since it has been crystallized in advance and has resistance, it is not corroded by the etching solution or is resistant to corrosion.

[0123] Next, a photosensitive resin such as an acrylic resin is applied to the substrate on which the first electrode 61 has been formed by a known application method to form a photosensitive resin coating film. In this example, a positive photosensitive resin is used as the photosensitive resin. Next, the photosensitive resin coating film is pre-baked, exposed to light, developed, and post-baked. By doing so, a third planarization film 53 having a third contact hole Hc and a first opening 53h is formed on the substrate. Here, the third planarization film 53 is an example of a first organic insulating film. The process of forming this third planarization film 53 corresponds to the second process.

[0124] Next, an indium tin oxide film (ITO film) is formed by, for example, sputtering on the substrate on which the third planarization film 53 has been formed. As a result, as shown in the upper diagrams of FIGS. 13A to 13C , a second transparent conductive film 104 is formed to cover the third planarization film 53 and the first electrode 61 exposed through the first opening 53h from the third planarization film 53. Subsequently, the second transparent conductive film 104 is patterned by photolithography to form a third partial wiring 383 on the substrate, as shown in the lower diagrams of FIGS. 13A to 13C . Here, the third partial wiring 383 is an example of a first wiring. The process of forming this third partial wiring 383 corresponds to the third process.

[0125] 13A, in a portion of the substrate including the first electrode 61 where the red EL element 60R is to be formed, the same film as the third partial wiring 383, i.e., the transparent conductive layer 64 that forms the lower component layer 62a from the second transparent conductive film 104, is formed. Also, as shown in Fig. 13B, in a portion of the substrate including the first electrode 61 where the green EL element 60G is to be formed, the same film as the third partial wiring 383, i.e., the transparent conductive layer 64 that forms the second optical path length adjustment layer 63 from the second transparent conductive film 104, is formed. Note that, as shown in Fig. 13C, in a portion of the substrate including the first electrode 61 where the blue EL element 60B is to be formed, the second transparent conductive film 104 is not left, and the transparent conductive layer 64 that forms the optical path length adjustment layer is not formed.

[0126] Next, a photosensitive resin such as an acrylic resin is applied by a known application method onto the substrate on which the third partial wiring 383 and other components have been formed, forming a photosensitive resin coating film. In this example, a positive photosensitive resin is used as the photosensitive resin. The photosensitive resin coating film is then pre-baked, exposed to light, developed, and post-baked. This forms a fourth planarization film 54 having a fourth contact hole Hd and a second opening 54h on the substrate. Here, the fourth planarization film 54 is an example of a second organic insulating film. The process of forming this fourth planarization film 54 corresponds to the fourth process.

[0127] Next, an indium tin oxide (ITO) film is formed by sputtering, for example, on the substrate on which the fourth planarization film 54 has been formed. As a result, as shown in the upper diagrams of FIGS. 14A to 14C , a third transparent conductive film 105 is formed to cover the fourth planarization film 54 and the first electrode 61, lower component layer 62a, and second optical path length adjustment layer 63 exposed through the second opening 54h from the fourth planarization film 54. Subsequently, the third transparent conductive film 105 is patterned by photolithography to form a fourth partial wiring 384 on the substrate, as shown in the lower diagrams of FIGS. 14A to 14C . Here, the fourth partial wiring 384 is an example of a second wiring. The process of forming this fourth partial wiring 384 corresponds to the fifth process.

[0128] 14A , in a portion of the substrate including the first electrode 61 where the red EL element 60R is to be formed (strictly speaking, on the lower component layer 62a), a transparent conductive layer 64 constituting the upper component layer 62b is formed from the same third transparent conductive film 105. This forms the first optical path length adjustment layer 62 consisting of the lower component layer 62a and the upper component layer 62b. Furthermore, as shown in the lower diagrams of FIGS. 14B and 14C , in a portion of the substrate including the first electrode 61 where the green EL element 60G is to be formed (strictly speaking, on the second optical path length adjustment layer 63), and in a portion of the substrate including the first electrode 61 where the blue EL element 60B is to be formed, the third transparent conductive film 105 is not left, and no transparent conductive layer constituting the optical path length adjustment layer is formed.

[0129] Next, a photosensitive resin such as an acrylic resin is applied by a known application method onto the substrate on which the fourth partial wiring 384 and the like have been formed, to form a photosensitive resin coating film. In this example, a positive photosensitive resin is used as the photosensitive resin. Next, the photosensitive resin coating film is pre-baked, exposed to light, developed, and post-baked. As a result, an edge cover 70 having a third opening 70h is formed on the substrate, as shown in the upper diagrams of FIGS. 15A to 15C.

[0130] Next, the substrate on which the edge cover 70 has been formed is subjected to an annealing treatment, for example, at a temperature of approximately 200°C to 250°C for 30 to 120 minutes. This annealing treatment crystallizes the third partial wiring 383 and the fourth partial wiring 384. This increases the conductivity and light transmittance of the third partial wiring 383 and the fourth partial wiring 384. As a result of the above, the connection wiring 38 (first connection wiring 38A and second connection wiring 38B) and the first optical path length adjustment layer 62 and second optical path length adjustment layer 63 are formed together.

[0131] Next, a hole injection layer 65a, a hole transport layer 65b, a light-emitting layer 65c, an electron transport layer 65d, and an electron injection layer 65e are formed in this order on the annealed substrate by a coating method such as an inkjet method. As a result, as shown in the lower diagrams of Figures 15A to 15C, an EL layer 65 is formed on the substrate so as to overlap the first electrode 61, the first optical path length adjustment layer 62, or the second optical path length adjustment layer 63 within the element hole 50h of the planarization film 50. This process of forming the EL layer 65 corresponds to the seventh process.

[0132] Thereafter, at least one conductive film selected from an indium tin oxide film (ITO film), an indium zinc oxide film (IZO film), and a magnesium silver alloy film (MgAg film) is formed on the substrate on which the EL layers 65 have been formed by vacuum deposition using, for example, a film formation mask called a CMM (Common Metal Mask) that can be patterned for each display panel. As a result, second electrodes 67 are formed on the substrate so as to overlap each of the EL layers 65.

[0133] In this manner, the circuit element layer 20 can be formed.

[0134] - Features of the embodiment - In the organic EL display device 1 of this embodiment, a first optical path length adjustment layer 62 having optical transparency is provided between the first electrode 61 and the EL layer 65 of the red EL element 60R. The distance that becomes the optical path length between the first electrode 61 and the EL layer 65 of the red EL element 60R can be adjusted by the thickness of this first optical path length adjustment layer 62. Therefore, by forming the first optical path length adjustment layer 62 using a film formation process that allows easy thickness adjustment, the optical path length between the reflective conductive layer 61b of the first electrode 61 and the light-emitting layer 65c of the EL layer 65 can be adjusted within a suitable range, and a microcavity structure can be realized in the red EL element 60R.

[0135] In the organic EL display device 1 of this embodiment, a second optical path length adjustment layer 63 having optical transparency is provided between the first electrode 61 and the EL layer 65 of the green EL element 60G. The distance that becomes the optical path length between the first electrode 61 and the EL layer 65 of the green EL element 60G can be adjusted by the thickness of this second optical path length adjustment layer 63. Therefore, by forming the second optical path length adjustment layer 63 using a film formation process that allows easy thickness adjustment, the optical path length between the reflective conductive layer 61b of the first electrode 61 and the light-emitting layer 65c of the EL layer 65 can be adjusted within a suitable range, and a microcavity structure can be realized in the green EL element 60G.

[0136] In the organic EL display device 1 of this embodiment, the lower component layer 62a and upper component layer 62b constituting the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are each formed in the same layer and from the same material as the partial wiring 380, specifically the third partial wiring 383 or the fourth partial wiring 384, which is provided above the first electrode 61. That is, in manufacturing the organic EL display device 1, the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are formed together with the partial wiring 380, so that it is not necessary to add processes for forming the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 to existing processes. This allows the manufacturing costs of the organic EL display device 1 to be reduced.

[0137] In the organic EL display device 1 of this embodiment, multiple types of organic EL elements 60 that emit different light colors are provided, including a red EL element 60R, a green EL element 60G, and a blue EL element 60B. This allows the organic EL display device 1 to perform color display in addition to monochrome display (grayscale display). The first optical path length adjustment layer 62 included in the red EL element 60R is thicker than the second optical path length adjustment layer 63 included in the green EL element 60G. The microcavity structure of the green EL element 60G can be achieved by adjusting the thickness of the second optical path length adjustment layer 63. Because the peak wavelength of the emitted light of the red EL element 60R is longer than the peak wavelength of the emitted light of the green EL element 60G, by making the first optical path length adjustment layer 62 thicker than the second optical path length adjustment layer 63, the distance that defines the optical path length between the first electrode 61 and the EL layer 65 can be adjusted to a suitable range, thereby achieving a microcavity structure in the red EL element 60R as well.

[0138] In the organic EL display device 1 of this embodiment, the first optical path length adjustment layer 62 is formed by laminating more transparent conductive layers 64 than the second optical path length adjustment layer 63. This makes it easier to adjust the thickness of the first optical path length adjustment layer 62 to be thicker than the thickness of the second optical path length adjustment layer 63. This is advantageous for realizing a microcavity structure in the red EL element 60R.

[0139] In the organic EL display device 1 of this embodiment, an optical path length adjustment layer is not provided in the blue EL element 60B. Because the peak wavelength of the emitted light color of the blue EL element 60B is shorter than the peak wavelength of the emitted light color of the green EL element 60G, by not providing an optical path length adjustment layer separately from the first electrode 61, the distance that forms the optical path length between the reflective conductive layer 61b of the first electrode 61 and the light-emitting layer 65c of the EL layer 65 does not become too large, and a microcavity structure can also be realized in the blue EL element 60B.

[0140] In the organic EL display device 1 of this embodiment, the thickness of the upper transparent conductive layer 61c constituting the first electrode 61 is the same for the red EL element 60R, the green EL element 60G, and the blue EL element 60B. Therefore, it is not necessary to form different upper transparent conductive layers 61c for the red EL element 60R, the green EL element 60G, and the blue EL element 60B, and the upper transparent conductive layers 61c for these three types of organic EL elements 60 can be formed from the same film.

[0141] In the organic EL display device 1 of this embodiment, the thickness of the upper transparent conductive layer 61c is set so that light having a wavelength corresponding to the emission color of the light-emitting layer 65c of the blue EL element 60B resonates between the reflective conductive layer 61b and the light-emitting layer 65c, which form the first electrode 61. This allows a microcavity structure to be realized in the blue EL element 60B. The thickness of the second optical path length adjustment layer 63 of the green EL element 60G is set so that light having a wavelength corresponding to the emission color of the light-emitting layer 65c of the green EL element 60G resonates between the reflective conductive layer 61b and the light-emitting layer 65c. This allows a microcavity structure to be realized in the green EL element 60G. The thickness of the first optical path length adjustment layer 62 of the red EL element 60R is set so that light having a wavelength corresponding to the emission color of the light-emitting layer 65c of the red EL element 60R resonates between the reflective conductive layer 61b and the light-emitting layer 65c. This allows a microcavity structure to be realized in the red EL element 60R.

[0142] In the organic EL display device 1 of this embodiment, the lower and upper constituent layers 62a and 62b of the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are each formed of indium tin oxide (ITO). Indium tin oxide (ITO) has relatively high optical transparency. Therefore, by providing the first optical path length adjustment layer 62 or the second optical path length adjustment layer 63 in the organic EL element 60, it is possible to suppress attenuation of light emitted from the EL layer 65 between the first electrode 61 and the EL layer 65. This is advantageous for extracting light with high color purity from the organic EL element 60 using a microcavity structure.

[0143] In the organic EL display device 1 of this embodiment, the second display area DA2, which transmits light used by the camera 3, is configured to include a multilayer wiring section MP. The first partial wiring 381, second partial wiring 382, ​​third partial wiring 383, and fourth partial wiring 384 included in the multilayer wiring section MP are each formed from a transparent conductive material that is optically transparent. This increases the optical transparency of the second display area DA2, which is advantageous for the camera 3 to function properly.

[0144] In the organic EL display device 1 of this embodiment, the plurality of organic EL elements 60 in the second display area DA2 are arranged in the light-emitting element area EA, and the plurality of pixel circuits PC that control the light emission of the organic EL elements 60 in the light-emitting element area EA are arranged around the light-emitting element area EA. This eliminates the need for pixel circuits PC in the light-emitting element area EA. This allows light to be suitably transmitted from the front side to the back side of the display area DA in the light-emitting element area EA, ensuring sufficient external light for use by the camera 3. Furthermore, the plurality of partial wirings 380 provided in different layers intersect with each other in the light-emitting element area EA via the organic insulating film 50a. This increases the degree of freedom in the layout of the connection wiring 38.

[0145] In the manufacturing method of the organic EL display device 1 of this embodiment, the first optical path length adjustment layer 62 is formed on each first electrode 61 constituting the red EL element 60R from the same film as the third partial wiring 383 and the fourth partial wiring 384, and the second optical path length adjustment layer 63 is formed on each first electrode 61 constituting the green EL element 60G from the same film as the third partial wiring 383. This eliminates the need to add processes for forming the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 to existing processes, thereby reducing the manufacturing costs of the organic EL display device 1. This is therefore suitable for manufacturing the organic EL display device 1.

[0146] In the manufacturing method of the organic EL display device 1 of this embodiment, the transparent conductive layer 64 forming the optical path length adjustment layer is laminated more on the first electrode 61 forming the red EL element 60R than on the first electrode 61 forming the green EL element 60G. This makes it easy to adjust the thickness of the first optical path length adjustment layer 62 to be thicker than the thickness of the second optical path length adjustment layer 63 so that the optical path length between the reflective conductive layer 61b of the first electrode 61 of the red EL element 60R and the light-emitting layer 65c of the EL layer 65 matches the peak wavelength of the emitted color of the red EL element 60R. This is advantageous for realizing a microcavity structure in the red EL element 60R.

[0147] <<Variation 1>> In the organic EL display device 1 of Variation 1, the lower constituent layer 62a and upper constituent layer 62b of the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are each formed of indium zinc oxide (IZO). The lower constituent layer 62a and the second optical path length adjustment layer 63 of the first optical path length adjustment layer 62 are formed from the same film and material as the third partial wiring 383. The upper constituent layer 62b of the first optical path length adjustment layer 62 is formed from the same film and material as the fourth partial wiring 384.

[0148] The third partial wiring 383 and the fourth partial wiring 384 are both formed of indium zinc oxide (IZO). In manufacturing the organic EL display device 1, an oxalic acid or PAN-based etching solution is used when patterning the second transparent conductive film 104 made of indium zinc oxide (IZO) to form the third partial wiring 383, the lower component layer 62 a, and the second optical path length adjustment layer 63. In addition, an oxalic acid or PAN-based etching solution is also used when patterning the third transparent conductive film 105 made of indium zinc oxide (IZO) to form the fourth partial wiring 384 and the upper component layer 62 b.

[0149] In this example, the second partial wiring 382 is formed from indium tin oxide (ITO). Indium tin oxide (ITO) has lower wiring resistance and higher transparency than indium zinc oxide (IZO). Therefore, by using indium tin oxide (ITO) as the material for the second partial wiring 382, ​​it is possible to reduce the resistance of the second connection wiring 38B while ensuring the necessary light transmittance in the second display area DA2. The second partial wiring 382 may also be formed from indium zinc oxide (IZO).

[0150] -Features of Modification 1- In the organic EL display device 1 of Modification 1, the lower and upper constituent layers 62a and 62b of the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are each formed of indium zinc oxide (IZO). Indium zinc oxide (IZO) has the property of being stable in an amorphous structure. Therefore, in manufacturing the organic EL display device 1, the second transparent conductive film 104 and the third transparent conductive film 105 made of indium zinc oxide (IZO) do not crystallize even when formed on the first electrode 61. Therefore, they can be easily removed by etching and patterned so as not to remain on the first electrode 61 of the organic EL element 60 where an optical path length adjustment layer is not required. This is advantageous for producing organic EL elements 60 having a microcavity structure with or without an optical path length adjustment layer and by varying the number of layers.

[0151] In the organic EL display device 1 of Modification 2, some of the second openings 54h in the third planarization film 53 and some of the third openings 70h in the fourth planarization film 54 are formed after forming the edge cover 70. Specifically, the second openings 54h corresponding to the blue EL elements 60B and the third openings 70h corresponding to the green EL elements 60G and the blue EL elements 60B are formed in the third planarization film 53 and the fourth planarization film 54 by post-processing.

[0152] In manufacturing the organic EL display device 1 of this example, as shown in the upper diagram of Figure 16, a third planarization film 53 is formed (second step) by a method similar to that of the above embodiment. At this time, the third planarization film 53 is formed in a pattern having first openings 53h only in portions corresponding to the red EL element 60R and the green EL element 60G, so as to cover the first electrode 61 constituting the blue EL element 60B. Next, as shown in the lower diagram of Figure 16, a lower component layer 62a and a second optical path length adjustment layer 63 are formed on the substrate on which the third planarization film 53 has been formed, in the same manner as in the above embodiment. At this time, a third partial wiring 383 is also formed, although not shown.

[0153] Next, as shown in the upper diagram of FIG. 17 , a fourth planarization film 54 is formed by a method similar to that of the above embodiment (fourth step). At this time, the fourth planarization film 54 is formed in a pattern having a second opening 54h only in the portion corresponding to the red EL element 60R, so as to cover the second optical path length adjustment layer 63 provided on the first electrode 61 of the green EL element 60G and the first electrode 61 of the blue EL element 60B. Subsequently, as shown in the lower diagram of FIG. 17 , an upper component layer 62b is formed on the substrate on which the fourth planarization film 54 has been formed, in the same manner as in the above embodiment, thereby forming the first optical path length adjustment layer 62. At this time, a fourth partial wiring 384 (not shown) is also formed.

[0154] Next, in the same manner as in the above embodiment, an edge cover 70 is formed on the substrate on which the first optical path length adjustment layer 62 has been formed, and the substrate on which the edge cover 70 has been formed is subjected to an annealing treatment. Thereafter, as shown in Fig. 18, a photoresist 201 is formed on the annealed substrate by a known photo process so as to cover the edge cover 70. At this time, the photoresist 201 is formed in a pattern having fourth openings 201h in portions corresponding to the green EL element 60G and the blue EL element 60B, so as to cover the portion corresponding to the red EL element 60R.

[0155] Next, using the photoresist 201 as a mask, the third planarization film 53 and the fourth planarization film 54 are dry-etched. In this dry etching, a fluorine-based gas, for example, is used as an etching gas. The third planarization film 53 and the fourth planarization film 54 are then patterned, removing the portion of the fourth planarization film 54 that covers the second optical path length adjustment layer 63 provided on the first electrode 61 that constitutes the green EL element 60G, and the portion of the third planarization film 53 and the fourth planarization film 54 that covers the first electrode 61 that constitutes the blue EL element 60B. This patterning process of the third planarization film 53 and the fourth planarization film 54 corresponds to the sixth process.

[0156] 19, a second opening 54h corresponding to the green EL element 60G is formed in the laminate film made up of the third planarization film 53 and the fourth planarization film 54, and a second opening 54h and a third opening 70h corresponding to the blue EL element 60B are also formed. The process of forming the second opening 54h and the third opening 70h corresponds to step 6. Thereafter, the photoresist 201 is removed by ashing or chemical treatment.

[0157] 20 , in a substrate in which the second opening 54h and the third opening 70h are formed in a laminate film made up of the third planarization film 53 and the fourth planarization film 54, an EL layer 65 is formed on the first electrode 61, the first optical path length adjustment layer 62, or the second optical path length adjustment layer 63 within the third opening 70h of the edge cover 70. Thereafter, in the same manner as in the above embodiment, a second electrode 67 is formed on the substrate on which the EL layer 65 is formed so as to overlap each EL layer 65. In this manner, the circuit element layer 20 can also be formed.

[0158] -Features of Modification 2- In the manufacturing method of organic EL display device 1 of Modification 2, when forming lower constituent layer 62a on first electrode 61 of red EL element 60R and first optical path length adjustment layer 62 on first electrode 61 of green EL element 60G, first electrode 61 of blue EL element 60B that does not have an optical path length adjustment layer is covered with third planarization film 53. Furthermore, when forming upper constituent layer 62b on first electrode 61 of red EL element 60R, first electrode 61 of blue EL element 60B that does not have an optical path length adjustment layer and second optical path length adjustment layer 63 of green EL element 60G are covered with fourth planarization film 54.

[0159] For example, when the first optical path length adjustment layer 62 (lower component layer 62a and upper component layer 62b) and the second optical path length adjustment layer 63 are formed of indium tin oxide (ITO), if the underlying layer is an inorganic film, crystallization of the indium tin oxide film (ITO film) tends to progress during or immediately after film formation. As a result, the indium tin oxide film (ITO film) cannot be properly removed by etching during patterning, and the indium tin oxide film (ITO film) may remain on the first electrode 61 of the blue EL element 60B or on the first optical path length adjustment layer 62 of the green EL element 60G. In this case, the optical path length between the reflective conductive layer 61b of the first electrode 61 and the light-emitting layer 65c of the EL layer 65 in the organic EL element 60 with the remaining indium tin oxide film (ITO film) deviates from the peak wavelength of the light to be extracted, making it impossible to realize a microcavity structure in the organic EL element 60.

[0160] In contrast, according to the manufacturing method of the organic EL display device 1 of Modification 2, the lower component layer 62a and the second optical path length adjustment layer 63 are formed with the first electrode 61 of the blue EL element 60B covered with the third planarization film 53, and the upper component layer 62b is formed with the first optical path length adjustment layer 62 formed ahead of the green EL element 60G covered with the fourth planarization film 54. This makes it possible to suppress the progression of crystallization of the indium tin oxide (ITO) film during or immediately after its formation, even when the first optical path length adjustment layer 62 (the lower component layer 62a and the upper component layer 62b) and the second optical path length adjustment layer 63 are formed of indium tin oxide (ITO). This allows for favorable patterning of the indium tin oxide (ITO) film to form the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63. This is advantageous for realizing a microcavity structure for the red EL element 60R, the green EL element 60G, and the blue EL element 60B.

[0161] 21 , in the organic EL display device 1 of Modification 3, the peripheral portions of each first opening 53h of the third planarization film 53 are formed thinner than the other portions of the third planarization film 53. Furthermore, the peripheral portions of each second opening 54h of the fourth planarization film 54 are formed thinner than the other portions of the fourth planarization film 54. Furthermore, the peripheral portions of each third opening 70h of the edge cover 70 are formed thinner than the other portions of the edge cover 70.

[0162] The third planarization film 53, the fourth planarization film 54, and the edge cover 70 in this example are formed using a multi-tone mask 202 such as a half-tone mask or a gray-tone mask.

[0163] Specifically, in the process of forming the third planarization film 53 in the manufacture of the organic EL display device 1 of this example, a first coating film 205 of photosensitive resin is formed on a substrate on which the first electrode 61 and the like have been formed, in the same manner as in the above embodiment, and then pre-baking, exposing, developing, and post-baking are performed on the first coating film 205 of photosensitive resin. At this time, as shown in the upper diagram of Figure 22, in the exposure process, light L is irradiated onto the first coating film 205 of photosensitive resin through a first photomask 202A, causing the photosensitive resin to react with the light L.

[0164] The first photomask 202A is a multi-tone mask 202. The first photomask 202A is configured to transmit light L to unnecessary portions of the first coating film 205 made of photosensitive resin, to partially block light L reaching the peripheral portion of the first opening 53h in the portion where the third planarization film 53 is formed, and to completely block light L reaching other portions. By using such a first photomask 202A, the third planarization film 53 is formed from the same first coating film 205 made of photosensitive resin so that the peripheral portion of the first opening 53h and other portions have a difference in height, as shown in the lower diagram of FIG. 22 , and the peripheral portion of the third planarization film 53 around the first opening 53h is formed thinner than the other portions.

[0165] In the step of forming the fourth planarization film 54, a second coating film 206 of photosensitive resin is formed on the substrate on which the third partial wiring 383 and the like have been formed, in the same manner as in the above embodiment, and then pre-baking, exposure, development, and post-baking are performed on the second coating film 206 of photosensitive resin. At this time, as shown in the upper diagram of Figure 23, in the exposure process, light L is irradiated onto the second coating film 206 of photosensitive resin through a second photomask 202B, and the photosensitive resin is made to react to the light L.

[0166] The second photomask 202B is also a multi-tone mask 202. The second photomask 202B is configured to transmit light L to unnecessary portions of the second coating film 206 made of photosensitive resin, to partially block light L reaching the peripheral portion of the second opening 54h in the portion where the fourth planarization film 54 is formed, and to completely block light L reaching other portions. By using such a second photomask 202B, the fourth planarization film 54 is formed from the second coating film 206 made of the same photosensitive resin so that there is a difference in height between the peripheral portion of the second opening 54h and the other portion, and the portion of the fourth planarization film 54 around the second opening 54h is formed thinner than the other portion, as shown in the lower diagram of FIG.

[0167] Furthermore, in the process of forming the edge cover 70, a third coating film 207 of photosensitive resin is formed on the substrate on which the fourth partial wiring 384 and the like have been formed, in the same manner as in the above embodiment, and then pre-baking, exposure, development, and post-baking are performed on the third coating film 207 of photosensitive resin. At this time, as shown in the upper diagram of Figure 24, in the exposure process, light L is irradiated onto the third coating film 207 of photosensitive resin through a third photomask 202C, and the photosensitive resin is made to react to the light L.

[0168] The third photomask 202C is also a multi-tone mask 202. The third photomask 202C is configured to allow light L to pass through unnecessary portions of the third coating film 207 made of photosensitive resin, to partially block light L reaching the portion of the edge cover 70 that is surrounding the third opening 70h, and to completely block light L reaching other portions. By using such a third photomask 202C, the edge cover 70 is formed from the same third coating film 207 made of photosensitive resin so that the portion surrounding the third opening 70h and other portions have a difference in height, as shown in the lower diagram of FIG. 24 , and the portion of the edge cover 70 surrounding the third opening 70h is formed thinner than the other portions.

[0169] -Features of Modification 3- In the organic EL display device 1 of Modification 3, the peripheral portion of the first opening 53h of the third planarization film 53 is formed thinner than the other portions of the third planarization film 53. The peripheral portion of the second opening 54h of the fourth planarization film 54 is formed thinner than the other portions of the fourth planarization film 54. The peripheral portion of the third opening 70h of the edge cover 70 is formed thinner than the other portions of the edge cover 70. This makes it possible to relatively shorten the lengths of the element hole 50h formed in the multilayer wiring section MP and the third opening 70h of the edge cover 70, thereby preventing the EL layer 65 from being interrupted or having a defective shape due to steps caused by the inner surfaces of the element hole 50h and the third opening 70h. This is advantageous for improving the yield of the organic EL display device 1.

[0170] In the manufacturing method of the organic EL display device 1 of Modification 3, the multi-tone mask 202 is used to form the third planarization film 53 at a peripheral portion of the first opening 53h thinner than the other portions, the fourth planarization film 54 at a peripheral portion of the second opening 54h thinner than the other portions, and the edge cover 70 at a peripheral portion of the third opening 70h thinner than the other portions. This makes it possible to omit the patterning step of partially thinning the third planarization film 53 around the first opening 53h, the patterning step of partially thinning the fourth planarization film 54 around the second opening 54h, and the patterning step of partially thinning the edge cover 70 around the third opening 70h. This is advantageous for improving the manufacturing efficiency of the organic EL display device 1.

[0171] 25 , in an organic EL display device 1 according to Modification 4, the planarization film 50 is formed by laminating a first planarization film 51, a second planarization film 52, and a third planarization film 53. The edge cover 70 is provided on the third planarization film 53 in the display area DA. The first connection wiring 38A is formed only by first partial wiring 381. Each first electrode 61 in the first display area DA1 is connected to the first connection wiring 38A via a second contact hole Hb formed in the second planarization film 52.

[0172] 26A to 26C, the second connection wiring 38B is composed of a first partial wiring 381, a second partial wiring 382, ​​and a third partial wiring 383. The first partial wiring 381 constituting the second connection wiring 38B is formed in the same manner as in the above embodiment. The second partial wiring 382 is provided with a portion corresponding only to the first circuit side wiring 383a described in the above embodiment. In other words, the second partial wiring 382 does not include the first element side wiring 382b.

[0173] The third partial wiring 383 extends to connect between the second partial wiring 382 and the first electrode 61. One of the third contact holes Hc formed in the third planarization film 53 penetrates to the second partial wiring 382, ​​as in the above embodiment. The other third contact hole Hc penetrates to a connecting piece 611 extending to the outer periphery of the first electrode 61 in the second display area DA2. The third partial wiring 383 is connected to the second partial wiring 382 via one of the third contact holes Hc, and is connected to the first electrode 61 via the other third contact hole Hc.

[0174] In the light-emitting element region EA, specific partial wirings 380 that are not connected to each other intersect with each other in a planar view. In this example, in the outer peripheral portion of the light-emitting element region EA, the second partial wirings 382 and the third partial wirings 383 intersect with each other in a planar view. A third planarization film 53 is interposed at the intersections between the second partial wirings 382 and the third partial wirings 383. Furthermore, a layout in which the second partial wirings 382 and the third partial wirings 383 intersect with each other in a planar view may be adopted in a portion other than the outer peripheral portion of the light-emitting element region EA.

[0175] The lower component layer 62a constituting the first optical path length adjustment layer 62 of the red EL element 60R and the second optical path length adjustment layer 63 of the green EL element 60G are formed in the same layer as the second partial wiring 382 and from the same material, for example, indium tin oxide (ITO). In this example, the lower component layer 62a and the first optical path length adjustment layer 62 are each provided so as to cover substantially the entire first electrode 61 except for the connecting piece 611. The surface of the lower component layer 62a is located at the bottom of the first opening 53h corresponding to the red EL element 60R. The surface of the second optical path length adjustment layer 63 is located at the bottom of the first opening 53h corresponding to the green EL element 60G. The surface of the first electrode 61 is located at the bottom of the first opening 53h corresponding to the blue EL element 60B.

[0176] Furthermore, the upper component layer 62b constituting the first optical path length adjustment layer 62 is formed in the same layer as the third partial wiring 383 and from the same material, for example, indium tin oxide (ITO). The upper component layer 62b is provided throughout the inside of the first opening 53h of the third planarization film 53 and extends to the outer periphery of the first opening 53h on the third planarization film 53. In this example, each element hole 50h formed in the planarization film 50 is composed only of the first opening 53h. The first opening 53h is located inside each third opening 70h of the edge cover 70 in a planar view. Each third opening 70h has the same shape as the first opening 53h and is formed to have the same opening area as the first opening 53h or a larger opening area than the first opening 53h.

[0177] Other Embodiments In the above embodiment, the second optical path length adjustment layer 63 is formed in the same layer and made of the same material as the third partial wiring 383, but this is not limited to this. The second optical path length adjustment layer 63 may be formed in the same layer and made of the same material as the fourth partial wiring 384. Furthermore, the first optical path length adjustment layer 62 is formed by stacking the lower component layer 62a and the upper component layer 62b, but this is not limited to this. The first optical path length adjustment layer 62 may be formed of a single transparent conductive layer 64.

[0178] For example, the first optical path length adjustment layer 62 may be formed in the same layer and made of the same material as the fourth partial wiring 384, and the second optical path length adjustment layer 63 may be formed in the same layer and made of the same material as the third partial wiring 383. In this case, in order to make the first optical path length adjustment layer 62 thicker than the second optical path length adjustment layer 63, the fourth partial wiring 384 may be formed thicker than the third partial wiring 383.

[0179] Furthermore, as long as the second optical path length adjustment layer 63 is formed in the same layer and from the same material as the third partial wiring 383 or the fourth partial wiring 384, the first optical path length adjustment layer 62 may be formed in a process separate from the process of forming the third partial wiring 383 or the fourth partial wiring 384. In short, it is sufficient that one or both of the first optical path length adjustment layer 62 and the second optical path length adjustment layer 63 are formed in the same layer and from the same material as the partial wiring 380 provided above the first electrode 61.

[0180] In the above embodiment, the multilayer wiring portion MP has a four-layer insulating structure made up of the first planarization film 51, the second planarization film 52, the third planarization film 53, and the fourth planarization film 54, and in Modification 4, the multilayer wiring portion MP has a three-layer insulating structure made up of the first planarization film 51, the second planarization film 52, and the third planarization film 53, but this is not limiting. The multilayer wiring portion MP may have a two-layer insulating structure including only two layers of organic insulating films, or may have a multilayer insulating structure including five or more layers of organic insulating films 50a.

[0181] In the above embodiment, the plurality of organic EL elements 60 provided in the light-emitting element area EA are grouped into two sets, and each set is connected to each other via the second connection wiring 38B (first element side wiring 382b), but this is not limited thereto. The plurality of organic EL elements 60 in the light-emitting element area EA may be grouped into three or more sets, and each set may be connected to each other via the second connection wiring 38B.

[0182] Furthermore, the organic EL elements 60 provided in the light-emitting element area EA do not have to be grouped into a set of two or more. That is, the organic EL elements 60 in the light-emitting element area EA may not be connected to each other and may be controlled individually. In this case, a separate pixel circuit PC is provided for each organic EL element 60 in the circuit arrangement area CA, and each organic EL element 60 is connected to a separate pixel circuit PC via the second connection wiring 38B.

[0183] In the above embodiment, each pixel PX is configured with sub-pixels SP of three colors, but this is not limited to this. The sub-pixels SP that configure each pixel PX may be of four or more colors. Furthermore, the three sub-pixels SP that configure each pixel PX are arranged in a stripe pattern, but this is not limited to this. The arrangement of the multiple sub-pixels SP may be another arrangement, such as a pentile arrangement.

[0184] Furthermore, each pixel PX may not be divided into a plurality of sub-pixels SP, but may be composed of a single organic EL element 60. An organic EL display device 1 having such a configuration performs monochrome display such as grayscale. In this case, each pixel PX corresponds to a unit pixel.

[0185] In the above embodiment, the EL layer 65 is provided individually for each subpixel SP, but this is not limiting. The EL layer 65 may be provided as a single layer common to a plurality of subpixels SP. In this case, the organic EL display device 1 may be provided with a color filter or the like to express color tones in each subpixel SP.

[0186] In the above embodiment, the plurality of TFTs 40 constituting the pixel circuit PC are three: the first TFT 40A, the second TFT 40B, and the third TFT 40C. However, this is not limited to this. The number of TFTs 40 constituting the pixel circuit PC may be two or less, or may be four or more. Furthermore, each TFT 40 may be configured as a bottom gate type.

[0187] In the above embodiment, the first electrode 61 functions as an anode and the second electrode 67 functions as a cathode, but this is not limiting. The organic EL display device 1 may be configured so that the first electrode 61 functions as a cathode and the second electrode 67 functions as an anode. In this case, the EL layer 65 has an inverted stacked structure.

[0188] In the above embodiment, the EL layer 65 has a five-layer structure including the hole injection layer 65 a, the hole transport layer 65 b, the light-emitting layer 65 c, the electron transport layer 65 d, and the electron injection layer 65 e, but is not limited to this. The EL layer 65 may have a three-layer structure including a hole injection / transport layer, the light-emitting layer 65 c, and the electron transport / injection layer, or any other laminated structure may be adopted.

[0189] In the above embodiment, the functional layers (hole injection layer 65 a, hole transport layer 65 b, light-emitting layer 65 c, electron transport layer 65 d, and electron injection layer 65 e) constituting the EL layer 65 are formed by a coating method such as an inkjet method, but the present invention is not limited to this. For example, the functional layers constituting the EL layer 65 may be formed by a vacuum deposition method or the like using a film-forming mask called an FMM (Fine Metal Mask) that can be patterned in subpixel units.

[0190] In the above embodiment, the substrate of the organic EL display device 1 is the substrate layer 10, but this is not limiting. The substrate may be made of any material, such as a plastic substrate made of polyethylene terephthalate (PET) or a glass substrate, as long as it is optically transparent.

[0191] In the above embodiment, the camera 3 is exemplified as an electronic component that can be combined with the organic EL display device 1, but this is not limiting. The electronic component may be any other electronic component, such as a fingerprint sensor, a face authentication sensor, or a brightness sensor, as long as it is arranged at a position overlapping the second display area DA2 on the rear side of the organic EL display device 1 and utilizes light that has passed through the display area DA2.

[0192] In the above embodiment, the organic EL display device 1 is described as an example of a display device according to the present disclosure, but the present disclosure is not limited thereto. The technology of the present disclosure can be applied to a display device including a plurality of light-emitting elements. For example, the display device may be a quantum dot display device including QLEDs (Quantum-dot Light Emitting Diodes), which are light-emitting elements using a quantum dot-containing layer.

[0193] As described above, preferred embodiments have been described as examples of the technology of the present disclosure. However, the technology of the present disclosure is not limited to these, and can be applied to embodiments in which appropriate modifications, substitutions, additions, omissions, etc. are made. It will be understood by those skilled in the art that various modifications are possible to the above-described embodiments without departing from the spirit of the technology of the present disclosure, and that such modifications also fall within the scope of the technology of the present disclosure.

[0194] Note that the above descriptions such as "first," "second," etc. are merely used to distinguish the terms to which these descriptions are attached, and do not limit the number or order of the terms. Furthermore, the description "to" in the above-described ranges of values ​​means a range that includes the values ​​before and after it. In other words, if X and Y are used as substitutes for numerical values, then "X to Y" indicates a range of "greater than or equal to X and less than or equal to Y."

[0195] INDUSTRIAL APPLICABILITY As described above, the present disclosure is useful for a display device and a manufacturing method thereof.

[0196] DA Display area DA1 First display area DA2 Second display area EA Light-emitting element area PC Pixel circuit MP Multilayer wiring section 1 Organic EL display device (display device) 3 Camera (electronic component) 38 Connection wiring 380 Partial wiring 383 Third partial wiring (first wiring) 384 Fourth partial wiring (second wiring) 50 Planarization film (laminated organic insulating film) 51 First planarization film (organic insulating film) 52 Second planarization film (organic insulating film) 53 Third planarization film (organic insulating film, first organic insulating film) 53h First opening (opening) 54 Fourth planarization film (organic insulating film, second organic insulating film) 54h Second opening (opening) 60 Organic EL element (light-emitting element) 60R Red EL element (first light-emitting element) 60G Green EL element (second light-emitting element) 60B Blue EL element (third light-emitting element) 61 First electrode 61b Reflective conductive layer 61c Upper transparent conductive layer 62 First optical path length adjustment layer (optical path length adjustment layer) 62a Lower component layer (transparent conductive layer) 62b Upper component layer (transparent conductive layer) 63 Second optical path length adjustment layer (optical path length adjustment layer) 64 Transparent conductive layer 65 EL layer (electroluminescence layer) 65c Light-emitting layer 67 Second electrode 202 Multi-tone mask

Claims

1. A display device having a display area consisting of a plurality of unit pixels, wherein the display area is provided with a plurality of light-emitting elements provided corresponding to the plurality of unit pixels, pixel circuits that control light emission of the light-emitting elements, and connection wiring that connects the pixel circuits and the light-emitting elements, wherein the connection wiring includes a plurality of partial wirings formed in different layers with an organic insulating film interposed therebetween, wherein the partial wirings are formed from a transparent conductive material having optical transparency and are stacked alternately with the organic insulating film to form a multi-layer wiring section, wherein the light-emitting elements have a first electrode provided in the multi-layer wiring section, an electroluminescent layer provided on the first electrode, and a second electrode that overlaps the first electrode with the electroluminescent layer interposed therebetween, wherein a light-transmitting optical path length adjustment layer is provided between the first electrode and the electroluminescent layer in a predetermined light-emitting element, and wherein the optical path length adjustment layer is formed in the same layer and from the same material as the partial wirings provided above the first electrode.

2. A display device according to claim 1, wherein the light-emitting elements are provided as a plurality of types of light-emitting elements emitting light of different colors, the plurality of types of light-emitting elements including a first light-emitting element having a predetermined peak wavelength of its emitted color and a second light-emitting element having a peak wavelength of its emitted color shorter than the peak wavelength of the emitted color of the first light-emitting element, the first light-emitting element is provided with a first optical path length adjustment layer as the optical path length adjustment layer, and the second light-emitting element is provided with a second optical path length adjustment layer as the optical path length adjustment layer, and the first optical path length adjustment layer is thicker than the second optical path length adjustment layer.

3. A display device according to claim 2, wherein the first optical path length adjustment layer is formed by laminating a larger number of transparent conductive layers than the second optical path length adjustment layer.

4. A display device according to claim 2 or 3, wherein the plurality of types of light-emitting elements include a third light-emitting element having a peak wavelength of the emitted color shorter than the peak wavelength of the emitted color of the second light-emitting element, and the third light-emitting element is not provided with the optical path length adjustment layer.

5. A display device according to claim 4, wherein the first light-emitting element is a light-emitting element having a light-emitting layer that emits red light, the second light-emitting element is a light-emitting element having a light-emitting layer that emits green light, and the third light-emitting element is a light-emitting element having a light-emitting layer that emits blue light.

6. A display device according to claim 5, wherein the first electrode comprises a reflective conductive layer having optical reflectivity and an upper transparent conductive layer provided on the reflective conductive layer and having optical transparency, the thickness of the upper transparent conductive layer is the same for the first light-emitting element, the second light-emitting element and the third light-emitting element and is set so that light of a wavelength corresponding to the emission color of the emission layer of the third light-emitting element resonates between the reflective conductive layer and the emission layer, the thickness of the first optical path length adjustment layer is set so that light of a wavelength corresponding to the emission color of the emission layer of the first light-emitting element resonates between the reflective conductive layer and the emission layer, and the thickness of the second optical path length adjustment layer is set so that light of a wavelength corresponding to the emission color of the emission layer of the second light-emitting element resonates between the reflective conductive layer and the emission layer.

7. A display device according to any one of claims 1 to 6, wherein the optical path length adjustment layer is formed from indium tin oxide.

8. A display device according to any one of claims 1 to 6, wherein the optical path length adjustment layer is formed from indium zinc oxide.

9. A display device according to any one of claims 1 to 8, wherein the organic insulating film provided above the first electrode has an opening formed therein that penetrates to the first electrode or the optical path length adjustment layer, the electroluminescent layer is provided as an upper layer of the multilayer wiring section and overlaps the first electrode or the optical path length adjustment layer via the opening, and the portion of the organic insulating film surrounding the opening is formed thinner than other portions.

10. A display device according to any one of claims 1 to 9, wherein electronic components that utilize external light transmitted through the display area are arranged at a position on the rear side that overlaps with the display area in a plan view, the display area having a first display area and a second display area provided inside the first display area, and the second display area is configured to include the multilayer wiring section and transmits light utilized by the electronic components.

11. A display device according to claim 10, wherein the second display region includes a light-emitting element region in which a plurality of the light-emitting elements are arranged, the pixel circuit for controlling the light emission of the light-emitting elements arranged in the light-emitting element region is provided around the light-emitting element region, and the plurality of partial wirings provided in different layers intersect with each other in the light-emitting element region via the organic insulating film.

12. The display device according to claim 10 or 11, wherein the electronic component is a camera.

13. The display device according to any one of claims 1 to 12, wherein the light-emitting element is an organic electroluminescence element.

14. A method for manufacturing a display device according to any one of claims 1 to 13, comprising: a first step of forming the first electrode on a substrate; a second step of forming a first organic insulating film on the substrate on which the first electrode has been formed; a third step of forming first wiring that constitutes the partial wiring on the first organic insulating film; a fourth step of forming a second organic insulating film having a contact hole that passes through to the first wiring on the substrate on which the first wiring has been formed; and a fifth step of forming second wiring that constitutes the partial wiring and is connected to the first wiring via the contact hole on the second organic insulating film, wherein in the third step, a transparent conductive layer that constitutes the optical path length adjustment layer is formed from the same film as the first wiring on the first electrode that constitutes a predetermined light-emitting element, or in the fifth step, a transparent conductive layer that constitutes the optical path length adjustment layer is formed from the same film as the second wiring on the first electrode that constitutes a predetermined light-emitting element.

15. A method for manufacturing a display device as defined in claim 14, wherein in one of the third and fifth steps, the transparent conductive layer is formed on the first electrode of a first light-emitting element having a predetermined peak wavelength of emitted light and on the first electrode of a second light-emitting element having a peak wavelength of emitted light shorter than that of the first light-emitting element, but not on the first electrode of a third light-emitting element having a peak wavelength of emitted light shorter than that of the second light-emitting element; and in the other of the third and fifth steps, the transparent conductive layer is not formed on the first electrode of the second light-emitting element or on the first electrode of the third light-emitting element, but is formed on the first electrode of the first light-emitting element.

16. A method for manufacturing a display device according to claim 15, wherein in the second step, the first organic insulating film is formed so as to cover the first electrode that constitutes the third light-emitting element; in the fourth step, the second organic insulating film is formed so as to cover the transparent conductive film provided on the first electrode that constitutes the second light-emitting element and the first electrode that constitutes the third light-emitting element; and after the fifth step, a sixth step of removing the portion of the second organic insulating film that covers the transparent conductive layer provided on the first electrode that constitutes the second light-emitting element, and the first organic insulating film and the portion of the second organic insulating film that is provided on the first electrode that constitutes the third light-emitting element.

17. A method for manufacturing a display device according to any one of claims 14 to 16, wherein in the second step, a peripheral portion of a first opening exposing the first electrode in the first organic insulating film is formed thinner than other portions using a multi-tone mask, or in the fourth step, a peripheral portion of a second opening exposing the first electrode in the second organic insulating film is formed thinner than other portions using a multi-tone mask, and further comprising, after the fifth step, a seventh step of forming the electroluminescent layer on a stacked organic insulating film including the first organic insulating film and the second organic insulating film so as to overlap the first electrode or the optical path length adjustment layer within an element hole formed by the first opening and the second opening.

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