High-frequency module and communication device

Abstract

The present invention provides a high-frequency module with uniform characteristics in which the degree of mutual interference between a first electronic component and a second electronic component is made uniform. A high-frequency module (1) comprises a mounting board (2) and a sub-module (4). The mounting board (2) has a first main surface (21) and a second main surface (22) that oppose one another. The sub-module (4) includes a support member (3), a first electronic component (41), a second electronic component (42), and a resin layer (61). The support member (3) has a third main surface (31) and a fourth main surface (32) that oppose one another. The first electronic component (41) is disposed on the third main surface (31) of the support member (3). The second electronic component (42) is disposed on the third main surface (31) of the support member (3). The resin layer (61) covers the first electronic component (41) and the second electronic component (42). The first electronic component (41) is disposed between the support member (3) and the second electronic component (42).

Description

High frequency module and communication device

[0001] The present invention relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a first electronic component and a second electronic component, and a communication device including the high-frequency module.

[0002] Patent Document 1 discloses an RF device package (radio frequency module) in which a plurality of filters (components) are arranged on a main surface (first main surface) of a substrate (module substrate). In the RF device package of Patent Document 1, the plurality of filters are arranged on the same main surface of the substrate in a stacked manner so that the plurality of filters overlap one another when viewed in a plan view from the thickness direction of the substrate.

[0003] US Patent Application Publication No. 2020 / 0077510

[0004] However, in the RF device package of Patent Document 1, it is difficult to arrange a plurality of filters, and the yield cannot be said to be high.

[0005] An object of the present invention is to provide a high-frequency module and a communication device that are easy to manufacture.

[0006] A high-frequency module according to one aspect of the present invention includes a mounting substrate and a submodule. The mounting substrate has a first main surface and a second main surface facing each other. The submodule is disposed on the first main surface of the mounting substrate. The submodule includes a support member, a first electronic component, a second electronic component, and a resin layer. The support member has a third main surface and a fourth main surface facing each other. The first electronic component is disposed on the third main surface of the support member. The second electronic component is disposed on the third main surface of the support member. The resin layer covers at least a portion of the first electronic component and the second electronic component. The first electronic component is disposed between the support member and the second electronic component.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit connected to the high-frequency module.

[0008] According to the high-frequency module and the communication device according to the above aspect, it is possible to facilitate manufacturing.

[0009] FIG. 1 is a cross-sectional view of a high-frequency module according to a first embodiment. FIG. 2 is a circuit configuration diagram of a communication device including the high-frequency module according to the same. FIG. 3 is a cross-sectional view of a high-frequency module according to a second embodiment. FIG. 4 is a cross-sectional view of a high-frequency module according to a third embodiment. FIG. 5 is a cross-sectional view of a high-frequency module according to a fourth embodiment. FIG. 6 is a cross-sectional view of a high-frequency module according to a fifth embodiment. FIG. 7 is a cross-sectional view of a high-frequency module according to a sixth embodiment. FIG. 8 is a plan view of a high-frequency module according to a seventh embodiment. FIG. 9 is a cross-sectional view of the high-frequency module according to the same embodiment, corresponding to the X1-X1 cross section in FIG. 8. FIG. 10A is a plan view of a high-frequency module according to an eighth embodiment. FIG. 10B is a cross-sectional view of the high-frequency module according to the same embodiment, corresponding to the X2-X2 cross section in FIG. 10A. FIG. 11A is a plan view of a high-frequency module according to a first modified example of the eighth embodiment. FIG. 11B is a cross-sectional view of the high-frequency module according to the same embodiment, corresponding to the X3-X3 cross section in FIG. 11A. FIG. 12A is a plan view of an example of a high-frequency module according to a second modified example of the eighth embodiment. FIG. 12B is a cross-sectional view of an example of the high-frequency module of the same, corresponding to the X4-X4 cross section of FIG. 12A. FIG. 13 is a circuit configuration diagram of a main part of a high-frequency module according to embodiment 9. FIG. 14 is a plan view of a high-frequency module according to embodiment 10. FIG. 15 is a cross-sectional view of the high-frequency module of the same, corresponding to the X5-X5 cross section of FIG. 14. FIG. 16 is an exploded view of a submodule substrate of the same high-frequency module, viewed from the arrows. FIG. 17 is an exploded view of a mounting substrate of the same high-frequency module, viewed from the arrows. FIG. 18 is a circuit configuration diagram of a main part of the same high-frequency module. FIG. 19 is a plan view of a main part of a high-frequency module according to modification 1 of embodiment 10. FIG. 20 is an exploded view of a submodule substrate of the same high-frequency module, viewed from the arrows. FIG. 21 is a circuit configuration diagram of a main part of a high-frequency module according to modification 2 of embodiment 10.

[0010] Hereinafter, high-frequency modules and communication devices according to embodiments will be described with reference to the drawings. The drawings referred to in the following embodiments are all schematic diagrams, and the ratios of the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0011] (Embodiment 1) (1) High-Frequency Module As shown in FIG. 2 , the high-frequency module 1 is used in, for example, a communication device 100. The communication device 100 is, for example, a mobile phone such as a smartphone. Note that the communication device 100 is not limited to a mobile phone and may be, for example, a wearable device such as a smartwatch. The high-frequency module 1 is a high-frequency module that is compatible with, for example, 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, etc. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standards. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 is compatible with, for example, carrier aggregation and dual connectivity.

[0012] (2) Circuit Configuration of High-Frequency Module Hereinafter, the circuit configuration of the high-frequency module 1 according to the first embodiment will be described with reference to FIG.

[0013] 2 , the high-frequency module 1 according to the first embodiment includes a plurality of external connection terminals 10, a switch 110, a first matching circuit 121, a second matching circuit 122, a transmit filter 131, a receive filter 132, a third matching circuit 141, a fourth matching circuit 142, a power amplifier 151, and a low-noise amplifier 152. The plurality of external connection terminals 10 include an antenna terminal 11, a signal input terminal 12, and a signal output terminal 13.

[0014] (2.1) Power Amplifier The power amplifier 151 is an amplifier that amplifies a transmission signal. The power amplifier 151 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 151 is connected to the signal processing circuit 17 via the signal input terminal 12. The output terminal of the power amplifier 151 is connected to the transmission filter 131 via the third matching circuit 141.

[0015] (2.2) Transmit Filter The transmit filter 131 is a filter that passes a transmit signal. The transmit filter 131 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW (Surface Acoustic Wave) filter that uses surface acoustic waves. The transmit filter 131 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the transmit filter 131 is connected to the output terminal of the power amplifier 151 via a third matching circuit 141. The output terminal of the transmit filter 131 is connected to the switch 110 via a first matching circuit 121.

[0016] (2.3) Low-Noise Amplifier The low-noise amplifier 152 is an amplifier that amplifies the received signal. The low-noise amplifier 152 has an input terminal (not shown) and an output terminal (not shown). The output terminal of the low-noise amplifier 152 is connected to the signal processing circuit 17 via the signal output terminal 13. The input terminal of the low-noise amplifier 152 is connected to the receive filter 132 via the fourth matching circuit 142.

[0017] (2.4) Receiving Filter The receiving filter 132 is a filter that passes the received signal. The receiving filter 132 is, for example, an acoustic wave filter including multiple series arm resonators and multiple parallel arm resonators. The acoustic wave filter is, for example, a SAW filter that uses surface acoustic waves. The receiving filter 132 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the receiving filter 132 is connected to the switch 110 via the second matching circuit 122. The output terminal of the receiving filter 132 is connected to the input terminal of the low-noise amplifier 152 via the fourth matching circuit 142.

[0018] (2.5) Switch The switch 110 selects whether the transmit filter 131 or the receive filter 132 is to be connected to the antenna terminal 11. In other words, the switch 110 is a switch for connecting either the receive path or the transmit path to the antenna terminal 11. The switch 110 has a common terminal 111 and multiple (two in the illustrated example) selection terminals 112 and 113. The common terminal 111 is connected to the antenna terminal 11. The selection terminal 112 is connected to the transmit filter 131 via a first matching circuit 121. The selection terminal 113 is connected to the receive filter 132 via a second matching circuit 122.

[0019] (2.6) Matching Circuit The first matching circuit 121 is a circuit for achieving impedance matching between the output terminal of the transmit filter 131 and the selection terminal 112 of the switch 110. The first matching circuit 121 includes at least one of one or more capacitors and one or more inductors.

[0020] The second matching circuit 122 is a circuit for achieving impedance matching between the selection terminal 113 of the switch 110 and the input terminal of the receive filter 132. The second matching circuit 122 includes at least one of one or more capacitors and one or more inductors.

[0021] The third matching circuit 141 is a circuit for achieving impedance matching between the output terminal of the power amplifier 151 and the input terminal of the transmit filter 131. The third matching circuit 141 includes at least one of one or more capacitors and one or more inductors.

[0022] The fourth matching circuit 142 is a circuit for achieving impedance matching between the output terminal of the receive filter 132 and the input terminal of the low-noise amplifier 152. The fourth matching circuit 142 includes at least one of one or more capacitors and one or more inductors.

[0023] (3) Structure of the High-Frequency Module The structure of the high-frequency module 1 according to the first embodiment will be described below with reference to the drawings.

[0024] 1 , the high-frequency module 1 according to the first embodiment includes, for example, a mounting substrate 2 and a submodule 4. As will be described later, the submodule 4 includes a first electronic component 41, a second electronic component 42, and a first resin layer 61. The high-frequency module 1 further includes an electronic component 43, a second resin layer 62, a metal layer 72, and a plurality of external connection terminals 10.

[0025] 1, the mounting substrate 2 has a first main surface 21 and a second main surface 22. The first main surface 21 and the second main surface 22 face each other in a first direction D1, which is the thickness direction of the mounting substrate 2. The mounting substrate 2 has a rectangular shape when viewed from a plane in the first direction D1, for example.

[0026] The submodules 4, electronic components 43, a second resin layer 62, and a metal layer 72 are arranged on the first main surface 21 of the mounting substrate 2. The mounting substrate 2 includes a plurality of electrodes 24 arranged on the first main surface 21. The plurality of electrodes 24 are electrically connected to the submodules 4 and electronic components 43 arranged on the first main surface 21 of the mounting substrate 2.

[0027] A plurality of external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2 .

[0028] The mounting substrate 2 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and multiple conductive layers are stacked in a first direction D1. The multiple conductive layers are formed in a predetermined pattern determined for each layer. Each of the multiple conductive layers includes one or multiple conductor portions in a plane perpendicular to the first direction D1. The material of each conductive layer is, for example, copper. The multiple conductive layers include a ground electrode to which a ground potential is applied. The mounting substrate 2 is, for example, a resin multilayer substrate.

[0029] The first main surface 21 and the second main surface 22 of the mounting substrate 2 are separated in the first direction D1 and intersect with the first direction D1. The first main surface 21 of the mounting substrate 2 is, for example, perpendicular to the first direction D1. The second main surface 22 of the mounting substrate 2 is, for example, perpendicular to the first direction D1. The first main surface 21 and the second main surface 22 of the mounting substrate 2 may have minute irregularities, recesses, or protrusions.

[0030] (3.2) Submodule As shown in FIG. 1, the submodule 4 is disposed on the first main surface 21 of the mounting substrate 2.

[0031] As shown in FIG. 1 , the submodule 4 includes a submodule substrate 3 , a first electronic component 41 , a second electronic component 42 , and a first resin layer 61 .

[0032] (3.2.1) Submodule Substrate As shown in FIG. 1 , the submodule substrate 3 has a third main surface 31 and a fourth main surface 32. The submodule substrate 3 corresponds to the support member of the present disclosure. The third main surface 31 and the fourth main surface 32 face each other in the first direction D1. The submodule substrate 3 has a rectangular shape when viewed from a plane in the first direction D1, for example.

[0033] A first electronic component 41, a second electronic component 42, and a first resin layer 61 are arranged on the third main surface 31 of the submodule substrate 3. The submodule substrate 3 includes a plurality of electrodes 34 arranged on the third main surface 31. The plurality of electrodes 34 are electrically connected to the first electronic component 41 and the second electronic component 42 arranged on the third main surface 31 of the submodule substrate 3.

[0034] The submodule substrate 3 includes a plurality of electrodes 33 arranged on a fourth main surface 32. The plurality of electrodes 33 are connected one-to-one to the plurality of electrodes 24 of the mounting substrate 2. In the high-frequency module 1 according to the first embodiment, the plurality of electrodes 33 and the plurality of electrodes 24 are joined by a plurality of solders 25.

[0035] The submodule substrate 3 is, for example, a wiring structure including at least one insulating layer and at least one conductive layer. The wiring structure is, for example, a rewiring layer in which the conductive layer includes one or more rewiring portions. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern determined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern determined for each layer.

[0036] The submodule substrate 3 is not limited to the above structure, but may be any supporting member including at least one conductive layer.

[0037] 1, the first electronic component 41 is disposed on the third main surface 31 of the submodule substrate 3. The first electronic component 41 is, for example, an IC including a power amplifier 151.

[0038] The first electronic component 41 includes a plurality of electrodes 51. The plurality of electrodes 51 of the first electronic component 41 are connected to the plurality of electrodes 34 of the submodule substrate 3 via, for example, solder 35. The plurality of electrodes 51 are, for example, conductive bumps. The material of the plurality of electrodes 51 is, for example, solder, gold, copper, or an alloy containing any of these.

[0039] 1 , the second electronic component 42 is disposed on the third main surface 31 of the submodule substrate 3. The second electronic component 42 is, for example, an IC including a control circuit that controls the power amplifier 151.

[0040] In the first direction D1, the first electronic component 41 is disposed between the second electronic component 42 and the submodule substrate 3. That is, in the high-frequency module 1, the first electronic component 41 is disposed between the second electronic component 42 and the mounting substrate 2. Here, in the high-frequency module 1 according to the first embodiment, the first electronic component 41 and the second electronic component 42 are not in contact with each other.

[0041] Furthermore, the first electronic component 41 and the second electronic component 42 overlap in a plan view from the first direction D1. Here, "the first electronic component 41 and the second electronic component 42 overlap in a plan view from the first direction D1" means that a portion of the first electronic component 41 overlaps a portion of the second electronic component 42 in a plan view from the first direction D1. Here, in the high-frequency module 1, the entire first electronic component 41 may overlap a portion of the second electronic component 42 in a plan view from the first direction D1.

[0042] The second electronic component 42 includes a plurality of electrodes 52. The plurality of electrodes 52 are connected to the plurality of electrodes 34 of the submodule substrate 3, for example, via solder 35. The material of the electrodes 52 is, for example, copper. The material of the electrodes 52 may also be a copper alloy. The length of the electrodes 52 in the first direction D1 is greater than the length of the first electronic component 41 in the first direction D1.

[0043] (3.2.4) First Resin Layer As shown in FIG. 1 , the first resin layer 61 is disposed on the third main surface 31 of the submodule substrate 3. The first resin layer 61 covers at least a portion of the first electronic component 41 and the second electronic component 42. The first resin layer 61 corresponds to the resin layer of the present disclosure. Specifically, the first resin layer 61 covers the second electronic component 42 except for the main surface opposite the submodule substrate 3. The first resin layer 61 also covers the portion of the third main surface 31 of the submodule substrate 3 where the first electronic component 41 and the second electronic component 42 are not disposed. The first resin layer 61 is also disposed between the first electronic component 41 and the second electronic component 42.

[0044] The material of the first resin layer 61 includes a resin, such as an epoxy resin. In the high-frequency module 1 according to the first embodiment, the first resin layer 61 includes a filler in addition to the resin.

[0045] The manufacturing process of the high-frequency module 1 includes a manufacturing process of the submodule 4. Here, for example, the process of mounting the second electronic component 42 on the submodule substrate 3 may require higher precision than the process of mounting the submodule 4 or the electronic component 43 on the mounting substrate 2. With the high-frequency module 1, for example, it is possible to inspect the submodule 4 before mounting it on the mounting substrate 2. Therefore, even if the submodule 4 is defective, it is possible to avoid a situation in which the high-frequency module 1 becomes defective. Therefore, it is possible to improve the yield of the high-frequency module 1.

[0046] The configuration of the high-frequency module 1 other than the sub-module 4 will be described below.

[0047] 1 , the electronic component 43 is disposed on the first main surface 21 of the mounting substrate 2. The electronic component 43 is, for example, a chip inductor included in the third matching circuit 141.

[0048] The electronic component 43 is mounted on, for example, the first main surface 21 of the mounting substrate 2. The electronic component 43 is connected to the mounting substrate 2 by, for example, soldering.

[0049] (3.4) External Connection Terminals The plurality of external connection terminals 10 are terminals for electrically connecting the mounting substrate 2 to an external substrate (not shown).

[0050] 1 , the plurality of external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2. "The external connection terminals 10 are arranged on the second main surface 22 of the mounting substrate 2" means that the external connection terminals 10 are mechanically connected to the second main surface 22 of the mounting substrate 2, and that the external connection terminals 10 are electrically connected to (appropriate conductor portions of) the mounting substrate 2. The material of the plurality of external connection terminals 10 is, for example, a metal (e.g., copper, copper alloy, etc.). Each of the plurality of external connection terminals 10 is a land electrode.

[0051] (3.5) Second Resin Layer As shown in Fig. 1 , the second resin layer 62 is disposed on the first main surface 21 of the mounting substrate 2. The second resin layer 62 covers the submodule 4 and the electronic components 43. The second resin layer 62 also covers the portions of the first main surface 21 of the mounting substrate 2 on which the electronic components 43 are not disposed.

[0052] The material of the second resin layer 62 includes a resin, such as an epoxy resin. In the high-frequency module 1 according to the first embodiment, the second resin layer 62 includes a filler in addition to the resin.

[0053] 1 , the metal layer 72 covers the second resin layer 62. More specifically, the metal layer 72 contacts a side surface 621 of the second resin layer 62 and a main surface 622 opposite the mounting substrate 2. In other words, the metal layer 72 covers the submodule 4.

[0054] The metal layer 72 has, for example, a multi-layer structure in which a plurality of metal layers are stacked.

[0055] (4) Communication Device As shown in FIG. 2 , the communication device 100 includes the high-frequency module 1, a signal processing circuit 17, and an antenna 16.

[0056] The antenna 16 is connected to the antenna terminal 11 of the high-frequency module 1. The antenna 16 has a transmitting function of emitting a transmission signal output from the high-frequency module 1 as radio waves, and a receiving function of receiving a reception signal from outside as radio waves and outputting it to the high-frequency module 1.

[0057] The signal processing circuit 17 includes an RF signal processing circuit 171 and a baseband signal processing circuit 172. The signal processing circuit 17 processes signals passing through the high-frequency module 1. More specifically, the signal processing circuit 17 processes transmission signals and reception signals.

[0058] The RF signal processing circuit 171 is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high frequency signals.

[0059] The RF signal processing circuit 171 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 172, and outputs the processed transmission signal to the high-frequency module 1. The RF signal processing circuit 171 also performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 172.

[0060] The baseband signal processing circuit 172 is, for example, a baseband integrated circuit (BBIC). The baseband signal processing circuit 172 performs predetermined signal processing on a transmission signal from outside the signal processing circuit 17. The received signal processed by the baseband signal processing circuit 172 is used, for example, as an image signal for image display or as an audio signal for telephone calls.

[0061] The RF signal processing circuit 171 also functions as a control unit that controls the connection of the switch 110 of the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signal, reception signal). Specifically, the RF signal processing circuit 171 switches the connection of the switch 110 of the high-frequency module 1 using a control signal (not shown). The control unit may be provided outside the RF signal processing circuit 171, and may be provided in the high-frequency module 1 or the baseband signal processing circuit 172, for example.

[0062] (5) Effects The high-frequency module 1 according to the first embodiment includes a mounting substrate 2 and a submodule 4. The mounting substrate 2 has a first main surface 21 and a second main surface 22 that face each other. The submodule 4 is disposed on the first main surface 21 of the mounting substrate 2. The submodule 4 includes a submodule substrate 3, a first electronic component 41, a second electronic component 42, and a resin layer 61. The submodule substrate 3 has a third main surface 31 and a fourth main surface 32 that face each other. The first electronic component 41 is disposed on the third main surface 31 of the submodule substrate 3. The second electronic component 42 is disposed on the third main surface 31 of the submodule substrate 3. The resin layer 61 covers at least a portion of the first electronic component 41 and the second electronic component 42. The first electronic component 41 is disposed between the submodule substrate 3 and the second electronic component 42. As a result, with the high-frequency module 1 according to the first embodiment, the degree of interference between the first electronic component 41 and the second electronic component 42 can be easily controlled. This makes it easy to improve the characteristics of the high-frequency module 1. Furthermore, with the high-frequency module 1 according to the first embodiment, the sub-module 4, which often requires high precision, can be manufactured in a separate process from the high-frequency module 1. This makes it possible to improve the yield in the manufacture of the high-frequency module 1.

[0063] The communication device 100 according to the first embodiment also includes a high-frequency module 1 and a signal processing circuit 17 connected to the high-frequency module 1. This makes it possible to improve the yield of the high-frequency module 1 included in the communication device 100.

[0064] (Embodiment 2) (1) Configuration In a radio frequency module 1a according to embodiment 2, in contrast to the configuration of the radio frequency module 1 according to embodiment 1, the submodule substrate 3 includes a plurality of first electrodes 34 connected to first electronic components 41 and a plurality of second electrodes 34a connected to second electronic components 42, as shown in Fig. 3. Furthermore, in the radio frequency module 1a according to embodiment 2, the submodule 4 includes a metal layer 71 in addition to the configuration of the submodule 4 according to embodiment 1.

[0065] The plurality of first electrodes 34 are connected to the first electronic component 41 via the plurality of solders 35 and the plurality of electrodes 51. The material of the plurality of first electrodes 34 is, for example, copper.

[0066] The multiple second electrodes 34a are connected to the second electronic component 42 via the multiple solder pieces 35 and the multiple electrodes 52a. Here, the length of the second electrodes 34a in the first direction D1 is longer than the length of the first electrodes 34 in the first direction D1. This makes it possible to shorten the length of the multiple electrodes 52a of the second electronic component 42 in the first direction D1. This facilitates alignment of the second electronic component 42 with the submodule substrate 3 and facilitates placement of the second electronic component 42 on the submodule substrate 3. This facilitates adjustment of the positional relationship between the first electronic component 41 and the second electronic component 42 in the submodule 4, making it easier to improve the characteristics of the high-frequency module 1a.

[0067] The second electrodes 34a are formed by, for example, plating. Specifically, each of the second electrodes 34a includes a seed electrode having the same thickness as the first electrodes 34 and copper plating formed on the seed layer. The second electrodes 34a may be formed integrally with a conductor layer included in the submodule substrate 3. The second electrodes 34a may be formed by soldering a conductor rod to the submodule substrate 3.

[0068] On the third main surface 31 of the submodule substrate 3, a first electronic component 41, a second electronic component 42, a first resin layer 61, and a metal layer 71 are arranged.

[0069] 3 , the metal layer 71 covers the first resin layer 61. More specifically, the metal layer 71 contacts a side surface 611 of the first resin layer 61 and a main surface 612 opposite the submodule substrate 3. The metal layer 71 has the effect of blocking electromagnetic waves from outside the submodule 4.

[0070] The metal layer 71 has, for example, a multi-layer structure in which a plurality of metal layers are stacked.

[0071] (2) Effects In the high-frequency module 1a according to the second embodiment, the submodule substrate 3 of the submodule 4 includes a first electrode 34 and a second electrode 34a. The first electrode 34 is disposed on the third main surface 31 of the submodule substrate 3 and connected to the first electronic component 41. The second electrode 34a is disposed on the third main surface 31 of the submodule substrate 3 and connected to the second electronic component 42. The length of the second electrode 34a in the first direction D1 is longer than the length of the first electrode 34 in the first direction D1. This facilitates alignment of the second electronic component 42 with the submodule substrate 3 in the high-frequency module 1a, thereby facilitating adjustment of the positional relationship between the first electronic component 41 and the second electronic component 42. This facilitates improvement of the characteristics of the high-frequency module 1a.

[0072] In the high-frequency module 1a according to the second embodiment, the second electrode 34a is made of copper, which makes it possible to easily manufacture the submodule substrate 3 of the submodule 4.

[0073] Third Embodiment (1) Configuration The high-frequency module 1b according to the third embodiment includes, in addition to the configuration of the high-frequency module 1 according to the first embodiment, an adhesive layer 8 disposed between the first electronic component 41 and the second electronic component 42, as shown in Fig. 4. The high-frequency module 1b according to the third embodiment also includes a metal layer 71, similar to the high-frequency module 1a according to the second embodiment.

[0074] The adhesive layer 8 is disposed between the first electronic component 41 and the second electronic component 42. More specifically, the adhesive layer 8 is in contact with the first electronic component 41 and also in contact with the second electronic component 42. The adhesive layer 8 is, for example, a die attach film (DAF), and bonds the first electronic component 41 and the second electronic component 42 together. The adhesive layer 8 includes, for example, a thermosetting resin.

[0075] In the high-frequency module 1b, when manufacturing the submodule 4, for example, the first electronic component 41 and the second electronic component 42 can be bonded to each other with the adhesive layer 8, and then the first electronic component 41 and the second electronic component 42 can be disposed on the submodule substrate 3. This facilitates manufacturing of the submodule 4. Furthermore, in the high-frequency module 1b, the submodule 4 can be manufactured with the first electronic component 41 and the second electronic component 42 fixed to each other, so the positional relationship between the first electronic component 41 and the second electronic component 42 is fixed. This makes it easy to adjust the degree of interaction between the first electronic component 41 and the second electronic component 42. Furthermore, because the adhesive layer 8 is always interposed between the first electronic component 41 and the second electronic component 42, heat generated from the first electronic component 41 can be easily dissipated from the second electronic component 42.

[0076] Furthermore, the thermal conductivity of the adhesive layer 8 is higher than the thermal conductivity of the first resin layer 61. This facilitates heat transfer between the first electronic component 41 and the second electronic component 42, thereby improving the heat dissipation of the first electronic component 41 or the second electronic component 42.

[0077] (2) Effects The high-frequency module 1b according to the third embodiment includes an adhesive layer 8 that is disposed between the first electronic component 41 and the second electronic component 42 and that is in contact with both the first electronic component 41 and the second electronic component 42. This allows, for example, the first electronic component 41 and the second electronic component 42 to be bonded together with the adhesive layer 8 before the first electronic component 41 and the second electronic component 42 are disposed on the submodule substrate 3 during manufacturing of the high-frequency module 1b. This facilitates manufacturing of the submodule 4. Furthermore, the high-frequency module 1b allows the relative positional relationship between the first electronic component 41 and the second electronic component 42 to be easily adjusted, which facilitates adjusting the degree of interaction between the first electronic component 41 and the second electronic component 42. This facilitates improving the characteristics of the high-frequency module 1b.

[0078] Furthermore, in the high-frequency module 1b according to the third embodiment, the thermal conductivity of the adhesive layer 8 is higher than the thermal conductivity of the first resin layer 61. This facilitates heat transfer between the first electronic component 41 and the second electronic component 42, thereby improving the heat dissipation performance of the first electronic component 41 or the second electronic component 42.

[0079] (Embodiment 4) (1) Configuration In the high-frequency module 1c of embodiment 4, compared to the configuration of the high-frequency module 1 of embodiment 1, as shown in Figure 5, the second electronic component 42 has a portion exposed from the first resin layer 61.

[0080] The high-frequency module 1c includes a metal layer 7 instead of the metal layer 72. The metal layer 7 includes a first portion 73 covering the first resin layer 61 and a second portion 74 covering the second resin layer 62. That is, the second portion 74 covers the first main surface 21 of the mounting substrate 2. The first portion 73 and the second portion 74 are in contact with each other without the second resin layer 62 interposed therebetween. That is, in the high-frequency module 1c, the metal layer 7 corresponds to the structure in which the metal layer 71 and the metal layer 72 are in contact with each other in the high-frequency module 1a according to the second embodiment.

[0081] Furthermore, the second electronic component 42 is in contact with the metal layer 7 without the first resin layer 61. This provides the second electronic component 42 with a heat dissipation path that does not pass through the first resin layer 61, improving the heat dissipation performance of the second electronic component 42. Furthermore, the metal layer 7 has a second portion 74 that faces the outside of the high-frequency module 1c, so that the metal layer 7 is located between the second electronic component 42 and the outside of the high-frequency module 1c. This further improves the heat dissipation performance of the second electronic component 42.

[0082] In the high-frequency module 1c, a heat dissipation path exists from the second electronic component 42 to the metal layer 7, particularly to the second portion 74, improving the heat dissipation of the second electronic component 42. Furthermore, in the high-frequency module 1c, there is a portion between the first portion 73 and the second portion 74 of the metal layer 7 where the second resin layer 62 is not present, which allows the high-frequency module 1c to be miniaturized.

[0083] (2) Effects In the high-frequency module 1c according to the fourth embodiment, the second electronic component 42 has a portion that is exposed from the first resin layer 61. This improves the heat dissipation properties of the second electronic component 42 in the high-frequency module 1c.

[0084] The high-frequency module 1c according to the fourth embodiment also includes a metal layer 7 that covers the first resin layer 61. The second electronic component 42 is in contact with the metal layer 7. This further improves the heat dissipation properties of the second electronic component 42 in the high-frequency module 1c.

[0085] Furthermore, in the high-frequency module 1c according to the fourth embodiment, the metal layer 7 includes a first portion 73 and a second portion 74. The first portion 73 covers the first resin layer 61. The second portion 74 covers the first main surface 21 of the mounting substrate 2. The first portion 73 and the second portion 74 are in contact with each other. This improves the heat dissipation performance of the second electronic component 42.

[0086] Furthermore, in the high-frequency module 1c according to the fourth embodiment, the first electronic component 41 includes a power amplifier 151. The second electronic component 42 includes a control circuit for the power amplifier 151. This improves the heat dissipation performance of the second electronic component 42 in the high-frequency module 1c, making it possible to dissipate heat generated by the power amplifier 151 via the second electronic component 42. This makes it possible to stabilize the operation of the high-frequency module 1c.

[0087] 6 , a high-frequency module 1c according to a fifth embodiment includes a metal layer 7 in addition to the high-frequency module 1 according to the first embodiment, similar to the high-frequency module 1a according to the second embodiment. In addition, in the high-frequency module 1c according to the fifth embodiment, a metal layer 71 and a second electronic component 42 are in contact with each other.

[0088] In the high-frequency module 1c according to the fifth preferred embodiment, the second electronic component 42 has a portion that is exposed from the first resin layer 61. This improves the heat dissipation properties of the second electronic component 42 in the high-frequency module 1c.

[0089] In the high-frequency module 1c according to the fifth embodiment, the second electronic component 42 is in contact with the metal layer 71. The metal layer 71 corresponds to the metal layer according to the seventh aspect. This further improves the heat dissipation performance of the second electronic component 42 in the high-frequency module 1c, similar to the high-frequency module 1c according to the fourth embodiment.

[0090] 7, the radio frequency module 1d according to the sixth embodiment differs from the radio frequency module 1c according to the fourth embodiment in the components arranged on the second main surface 22 of the mounting substrate 2. Furthermore, the radio frequency module 1d according to the sixth embodiment includes a metal layer 7, similar to the radio frequency module 1a according to the second embodiment.

[0091] The high-frequency module 1d according to the sixth embodiment includes a third electronic component 44. A plurality of external connection terminals 10, the third electronic component 44, and a third resin layer 63 are arranged on the second main surface 22 of the mounting substrate 2. The mounting substrate 2 includes a plurality of electrodes 26 arranged on the second main surface 22.

[0092] 7, the third electronic component 44 is disposed on the second main surface 22 of the mounting substrate 2. The third electronic component 44 is, for example, an IC including a low-noise amplifier 152.

[0093] The third electronic component 44 is, for example, flip-chip mounted on the second main surface 22 of the mounting substrate 2. The third electronic component 44 includes a plurality of electrodes 91. The plurality of electrodes 91 are connected to a plurality of electrodes 26 of the mounting substrate 2 via a plurality of solders 27. The plurality of electrodes 91 are, for example, conductive bumps. The conductive bumps are made of, for example, copper.

[0094] Each of the plurality of external connection terminals 10 is, for example, a columnar electrode, and is connected to a plurality of electrodes 26 of the mounting substrate 2 via, for example, solder 27 .

[0095] Here, at least a portion of the multiple external connection terminals 10 overlaps with the first electronic component 41 in a plan view from the first direction D1. As described above, the first electronic component 41 includes the power amplifier 151. In the high-frequency module 1d, because the first electronic component 41 and the multiple external connection terminals 10 at least partially overlap in a plan view from the first direction D1, at least a portion of the multiple external connection terminals 10 function as heat dissipation members for the heat generated by the first electronic component 41. This improves the heat dissipation performance of the power amplifier 151, making it possible to stabilize the operation of the high-frequency module 1d.

[0096] 7 , the third resin layer 63 is disposed on the second main surface 22 of the mounting substrate 2. The third resin layer 63 covers the third electronic component 44. The third resin layer 63 also covers a portion of the second main surface 22 of the mounting substrate 2 on which the third electronic component 44 and the plurality of external connection terminals 10 are not disposed.

[0097] The material of the third resin layer 63 includes a resin, such as an epoxy resin. In the high-frequency module 1d according to the sixth embodiment, the third resin layer 63 includes a filler in addition to the resin.

[0098] (2) Effects The high-frequency module 1d according to the sixth embodiment includes a third electronic component 44 disposed on the second main surface 22 of the mounting substrate 2. Therefore, compared to when the third electronic component 44 is disposed on the first main surface 21 of the mounting substrate 2, the area of ​​the first main surface 21 of the mounting substrate 2 of the high-frequency module 1d can be made smaller.

[0099] Furthermore, the high-frequency module 1d according to the sixth embodiment includes an external connection terminal 10 disposed on the second main surface 22 of the mounting substrate 2. The first electronic component 41 includes a power amplifier 151. In a plan view from the first direction D1, the first electronic component 41 and the external connection terminal 10 overlap. As a result, in the high-frequency module 1d, the external connection terminal 10 functions as a heat dissipation path from the power amplifier 151, thereby improving the heat dissipation performance of the power amplifier 151 and making it possible to stabilize the operation of the high-frequency module 1d.

[0100] Seventh Embodiment (1) Configuration The high-frequency module 1e according to the seventh embodiment includes a plurality of power amplifiers 151. Furthermore, in addition to the configuration of the high-frequency module 1 according to the first embodiment, the high-frequency module 1e according to the seventh embodiment includes a plurality of first electronic components 41 (two in FIGS. 8 and 9 ) and further includes an electronic component 49, as shown in FIGS. 8 and 9 . Note that the metal layer 72, the first resin layer 61, and the second resin layer 62 are omitted from FIGS. 8 and 9 . Also, FIG. 8 is a plan view of the main surface of the first electronic component 41 facing the second electronic component 42, and the second electronic component 42 is shown by a virtual line. Furthermore, in the high-frequency module 1e according to the seventh embodiment, as shown in FIGS. 8 and 9 , the first electronic component 41 includes a portion that does not overlap with the second electronic component in a plan view from the first direction D1.

[0101] In the high-frequency module 1e according to the seventh embodiment, the multiple (two in FIGS. 8 and 9 ) first electronic components 41 include first electronic components 41a and 41b. The first electronic components 41a, 41b, and electronic component 49 include power amplifiers 151 that are different from each other. That is, in the high-frequency module 1e according to the seventh embodiment, the multiple power amplifiers 151 are included in different ICs. The electronic component 49 corresponds to the IC that includes the first power amplifier 151. The power amplifier 151 included in each of the two first electronic components corresponds to the second power amplifier 151.

[0102] The second electronic component 42 includes a control circuit that controls the power amplifiers 151 included in each of the two first electronic components 41 and the electronic component 49. That is, the second electronic component 42 includes a plurality of power amplifiers 151 included in the plurality of first electronic components 41 and a control circuit for the power amplifiers 151 included in the electronic component 49. As a result, in the high-frequency module 1e, if the sum of the areas of the main surfaces of the ICs including the plurality of power amplifiers 151 is larger than the area of ​​the main surface of the second electronic component 42, it is not necessary to configure all of the ICs including the power amplifiers 151 as the first electronic components 41 to form the submodule 4. That is, in the high-frequency module 1e according to the seventh embodiment, if the high-frequency module 1e includes a large number of power amplifiers 151, it is possible to reduce the size of the high-frequency module 1e compared to a case in which all of the ICs including the power amplifiers 151 are configured as the first electronic components 41 to form the submodule 4.

[0103] The electronic component 49 is, for example, flip-chip mounted on the first main surface 21 of the mounting substrate 2. The electronic component 49 is connected to the mounting substrate 2 by, for example, conductive bumps.

[0104] As shown in FIG. 8 , the second electronic component 42 has a rectangular shape when viewed from the first direction D1. Here, "the second electronic component 42 has a rectangular shape when viewed from the first direction D1" refers not only to a case where the shape of the second electronic component 42 when viewed from the first direction D1 is strictly rectangular, but also to a case where the shape has slight irregularities. The term "rectangle" as used herein refers to a quadrangle in which all interior angles are right angles, and includes both a rectangle and a square. The outer periphery of the second electronic component 42 when viewed from the first direction D1 includes, for example, sides 421 and 422 extending in the second direction D2 and sides 423 and 424 extending in the third direction D3. The second direction D2 and the third direction D3 are perpendicular to each other and are both perpendicular to the first direction D1. The second direction D2 is, for example, the longitudinal direction of the second electronic component 42. When the second electronic component 42 has a square shape in a plan view from the first direction D1, the second direction D2 is a direction parallel to any two of the four sides.

[0105] As shown in FIG. 8 , in a plan view from the first direction D1, the multiple first electronic components 41 intersect with the side 421. More specifically, in a plan view from the first direction D1, each of the multiple first electronic components 41 includes a region 411 that overlaps with the second electronic component 42 and a region 412 that does not overlap with the second electronic component 42. In a plan view from the first direction D1, the boundary between the region 411 and the region 412 overlaps with the side 421. In addition, the second electronic component 42 has multiple electrodes 52 along the three sides other than the side 421. That is, of the multiple electrodes 52 included in the second electronic component 42, the electrodes 52 that are located near the outer periphery of the second electronic component 42 in a plan view from the first direction D1 are located near any of the sides 422, 423, and 424. This makes it possible to reduce mutual interference between the first electronic component 41 and the second electronic component 42. More specifically, the plurality of electrodes 52 included in the second electronic component 42 do not overlap with the region 411 of the first electronic component 41 in a plan view from the first direction D1, and are not located near the region 412 of the first electronic component 41. Therefore, for example, even if the first electronic component 41 has an elongated electrode 51a between itself and the submodule substrate 3 in the region 412, electromagnetic coupling between the first electronic component 41 and the second electronic component 42 is unlikely to occur between the electrode 52 of the second electronic component 42 and the electrode 51a of the first electronic component 41.

[0106] (2) Effects In the high-frequency module 1e according to the seventh embodiment, the first electronic component 41 has a rectangular shape in a plan view from the first direction D1. The second electronic component 42 has a plurality of electrodes 52 for connection to the submodule substrate 3 along three sides of the outer periphery in the plan view from the first direction D1, except for one side 421 that extends in the second direction D2, which is the longitudinal direction of the second electronic component 42. This makes it possible to reduce mutual interference between the first electronic component 41 and the second electronic component 42.

[0107] Moreover, the high-frequency module 1e according to the seventh embodiment includes an electronic component 49 including a power amplifier 151. The first electronic component 41 includes a power amplifier 151 that is different from the power amplifier 151 included in the electronic component 49. The second electronic component 42 includes the power amplifier 151 included in the electronic component 49 and a control circuit for the power amplifier 151 included in the first electronic component 41. As a result, when the high-frequency module 1e includes a large number of power amplifiers 151, it is possible to reduce the size of the high-frequency module 1e compared to when all ICs including the power amplifiers 151 are used as components of the submodule 4 as the first electronic components 41.

[0108] 10A and 10B , a high-frequency module 1f according to the eighth embodiment includes, in addition to the configuration of the high-frequency module 1e according to the seventh embodiment, circuit elements 45 and 46 disposed on the first main surface 21 of the mounting substrate 2. Note that, similar to FIGS. 8 and 9 , the metal layer 72, the first resin layer 61, and the second resin layer 62 are omitted from FIGS. 10A and 10B . Also, FIG. 10A is a plan view of the main surface of the first electronic component 41 facing the second electronic component 42, and the second electronic component 42 is shown by a virtual line.

[0109] The circuit element 45 is a capacitor or an inductor included in a third matching circuit 141 connected to a power amplifier 151 included in the first electronic component 41. The third matching circuit 141 corresponds to the matching circuit according to the eighteenth aspect. Note that the circuit element 45 may be, for example, a capacitor or an inductor included in a matching circuit connected to the input terminal of the power amplifier 151.

[0110] The circuit element 45 is disposed on the mounting substrate 2. More specifically, the circuit element 45 is disposed on the first main surface 21 of the mounting substrate 2. The circuit element 45 is, for example, a surface-mount capacitor or inductor. This makes it possible to shorten the wiring length between the circuit element 45 and the first electronic component 41.

[0111] The circuit element 46 is a capacitor or an inductor included in the third matching circuit 141 connected to the power amplifier 151 included in the first electronic component 41. Note that the circuit element 46 may be, for example, a capacitor or an inductor included in a matching circuit connected to the input terminal of the power amplifier 151.

[0112] The circuit element 46 is, for example, an inductor, a transformer, or a balun (balanced-unbalanced converter) that is installed inside the mounting substrate 2. Note that a portion of the circuit element 46 may be exposed on the first main surface 21 of the mounting substrate 2. In a plan view from the first direction D1, the circuit element 46 overlaps with one side 421 of the second electronic component 42. This makes it possible to shorten the wiring length between the circuit element 46 and the first electronic component 41. It also makes it possible to reduce mutual interference between the circuit element 46 and the second electronic component 42.

[0113] The first electronic component 41 has an electrode 51a that overlaps one side 421 of the second electronic component 42 in a plan view from the first direction D1. The electrode 51a of the first electronic component 41 is spaced apart from the electrode 52 of the second electronic component 42, thereby reducing mutual interference between the first electronic component 41 and the second electronic component 42. The electrode 51a is connected, for example, to the collector of a transistor in the power amplifier 151 included in the first electronic component 41. The electrode 51a is also connected, for example, to the drain of a field-effect transistor included in the first electronic component 41. The electrode 51a of the first electronic component 41 is preferably connected to one or both of the circuit element 45 and the circuit element 46. This allows the wiring length between the power amplifier 151 included in the first electronic component 41 and the matching circuit to be shortened, thereby improving the noise resistance of the high-frequency module 1f.

[0114] (2) Effects In the high-frequency module 1f according to the eighth embodiment, the first electronic component 41 intersects with one side 421 of the second electronic component 42. The first electronic component 41 has an electrode 51a that overlaps with the one side 421 of the second electronic component 42 in a plan view from the first direction D1. This makes it possible to reduce mutual interference between the first electronic component 41 and the second electronic component 42.

[0115] Furthermore, the high-frequency module if according to the eighth embodiment includes a third matching circuit 141. The first electronic component 41 includes a power amplifier 151. The third matching circuit 141 is connected to the power amplifier 151. The third matching circuit 141 includes circuit elements 45 and 46 arranged on the mounting board 2. This makes it possible to shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit elements 45 and 46, thereby improving the noise resistance of the high-frequency module if.

[0116] (3) Modifications (3.1) Modification 1 (3.1.1) Configuration As shown in Figures 11A and 11B, a high-frequency module 1g according to Modification 1 of Embodiment 8 includes a circuit element 47 instead of the circuit element 45 and a circuit element 48 instead of the circuit element 46 in the configuration of the high-frequency module 1f according to Embodiment 8. Note that, in Figures 11A and 11B, the metal layer 72, the first resin layer 61, and the second resin layer 62 are omitted, as in Figures 8 and 9. Also, Figure 11A is a plan view of the main surface of the first electronic component 41 facing the second electronic component 42, and the second electronic component 42 is shown by a virtual line.

[0117] 11A and 11B , the circuit element 47 is a surface-mounted capacitor. The circuit element 47 is included in, for example, the third matching circuit 141. Note that the circuit element 47 may also be included in, for example, a matching circuit connected to the input terminal of the power amplifier 151.

[0118] 11A and 11B, the circuit element 48 is an inner layer inductor. The circuit element 48 is disposed on the first main surface 21 and between the first main surface 21 and the second main surface 22 of the mounting substrate 2.

[0119] The circuit element 48 is included in, for example, the third matching circuit 141. Note that the circuit element 48 may be included in, for example, a matching circuit connected to the input terminal of the power amplifier 151.

[0120] (3.1.2) Effects In the high-frequency module 1g according to the first modification of the eighth embodiment, the circuit element 48 is an inductor that is built into the mounting substrate 2. In a plan view from the first direction D1, the circuit element 48 overlaps with one side 421 of the second electronic component 42. This makes it possible to shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit element 48, thereby improving the noise resistance of the high-frequency module 1f.

[0121] Furthermore, in the high-frequency module 1g according to the first modification of the eighth embodiment, the circuit element 47 is a surface-mounted circuit element disposed on the first main surface 21 of the mounting substrate 2. This allows the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit element 47 to be shortened, thereby improving the noise resistance of the high-frequency module 1f.

[0122] (3.2) Modification 2 In a high-frequency module 1h according to Modification 2 of Embodiment 8, as shown in Figures 12A and 12B, in the configuration of the high-frequency module 1g according to Modification 1 of Embodiment 8, the circuit element 48 and the mounting substrate 2 are integrally molded. Note that, similar to Figures 8 and 9, the metal layer 72, the first resin layer 61, and the second resin layer 62 are omitted in Figures 12A and 12B. Also, Figure 12A is a plan view of the main surface of the first electronic component 41 facing the second electronic component 42, and the second electronic component 42 is shown by a virtual line.

[0123] 12A and 12B , the circuit element 48 is an inner-layer inductor. The circuit element 48 includes a conductor disposed on the first main surface 21 of the mounting substrate 2. The circuit element 48 also includes one or more conductors (two in FIG. 11B ) disposed between the first main surface 21 and the second main surface 22 of the mounting substrate 2. Here, the multiple conductors included in the circuit element 48 are formed integrally with each of the multiple conductor layers included in the mounting substrate 2. That is, the conductor of the circuit element 48 disposed on the first main surface 21 of the mounting substrate 2 is formed, for example, simultaneously with the electrode 24 disposed on the first main surface 21 of the mounting substrate 2. Furthermore, the multiple conductors of the circuit element 48 disposed between the first main surface 21 and the second main surface 22 of the mounting substrate 2 are formed simultaneously with each of the multiple conductor layers disposed between the first main surface 21 and the second main surface 22 of the mounting substrate 2.

[0124] In the high-frequency module 1h according to the second modification of the eighth embodiment, the wiring length between the power amplifier 151 and the circuit element 48 can be shortened, thereby improving the noise resistance of the high-frequency module 1g.

[0125] Ninth Embodiment (1) Configuration A high-frequency module 1e according to the ninth embodiment differs from the high-frequency module 1e according to the seventh embodiment in the functions of a first electronic component 41 and a second electronic component 42.

[0126] 13 , the second electronic component 42 includes a control circuit 425, a plurality of amplifier circuits 426, a plurality of switches 427, a plurality of switches 428, a plurality of low-noise amplifiers 152, a plurality of switches 429, and a switch 420. Note that the antenna terminal 11, the switch 110, the first matching circuit 121, and the second matching circuit 122 are omitted from Fig. 13 . Each of the plurality of first electronic components 41 and the electronic component 49 includes an amplifier circuit 153 instead of the power amplifier 151.

[0127] The multiple amplifier circuits 426 are connected one-to-one to the multiple amplifier circuits 153. Each of the multiple amplifier circuits 426 is connected in series to a corresponding amplifier circuit 153. In the high-frequency module 1e according to the ninth embodiment, the multiple power amplifiers 151 include multiple amplifier circuits 426 and multiple amplifier circuits 153. That is, the power amplifier 151a includes a series circuit of the amplifier circuit 426 and the amplifier circuit 153a. The power amplifier 151b includes a series circuit of the amplifier circuit 426 and the amplifier circuit 153b. The power amplifier 151c includes a series circuit of the amplifier circuit 426 and the amplifier circuit 153c. Here, the amplifier circuit 426 included in the power amplifier 151a, the amplifier circuit 426 included in the power amplifier 151b, and the amplifier circuit 426 included in the power amplifier 151c are different from one another.

[0128] Each of the multiple amplifier circuits 426 corresponds to a first amplifier circuit. Specifically, each of the multiple amplifier circuits 426 is a pre-stage amplifier and amplifies a signal input from a corresponding signal input terminal 12. Each of the multiple amplifier circuits 426 has, for example, a transistor containing Si as a semiconductor. Furthermore, each of the multiple amplifier circuits 153 corresponds to a second amplifier circuit. Specifically, each of the multiple amplifier circuits 153 is a post-stage amplifier and amplifies a signal output from a corresponding amplifier circuit 426. Each of the multiple amplifier circuits 153 has, for example, a transistor containing GaAs as a semiconductor.

[0129] The control circuit 425 is a control circuit that controls the multiple power amplifiers 151. The control circuit 425 also supplies a bias to each of the multiple power amplifiers 151. That is, the control circuit 425 of the second electronic component 42 supplies a bias to the multiple power amplifiers 151. The bias here refers to, for example, a bias current or a bias voltage. In the high-frequency module 1e according to the ninth embodiment, the control circuit 425 supplies a bias to all of the multiple amplifier circuits 426 and the multiple amplifier circuits 153.

[0130] In the high-frequency module 1e according to the ninth embodiment, the signal amplification performed by the power amplifier 151 of the high-frequency module 1 according to the first embodiment is shared between one amplifier circuit 426 and an amplifier circuit 153 corresponding to the one amplifier circuit 426. Therefore, the amplification gain of the amplifier circuit 153 included in the first electronic component 41 does not need to be as large as the amplification gain of the power amplifier 151 in the high-frequency module 1 according to the first embodiment. This makes it possible to reduce the size of the first electronic component 41.

[0131] The plurality of switches 427 correspond one-to-one to the plurality of amplifier circuits 426. Each of the plurality of switches 427 is arranged between the corresponding amplifier circuit 426 and the signal input terminal 12 connected to the corresponding amplifier circuit 426.

[0132] The plurality of switches 428 correspond one-to-one to the plurality of low-noise amplifiers 152. Each of the plurality of switches 428 is arranged between the corresponding low-noise amplifier 152 and the signal output terminal 13 connected to the corresponding low-noise amplifier 152.

[0133] The multiple switches 429 correspond one-to-one to the multiple transmit filters 131. Each of the multiple switches 429 is disposed between the corresponding transmit filter 131 and the multiple power amplifiers 151. Each of the multiple switches 429 selects the power amplifier 151 to be connected to the corresponding transmit filter 131.

[0134] The switch 420 is disposed between the receive filter 132 and the plurality of low-noise amplifiers 152. The switch 420 selects the low-noise amplifier 152 to be connected to the receive filter 132.

[0135] (2) Effects In the high-frequency module 1e according to the ninth embodiment, the control circuit 425 of the second electronic component 42 supplies bias to the multiple power amplifiers 151. This allows the second electronic component 42 to supply bias to the multiple power amplifiers 151 included in the high-frequency module 1e.

[0136] Moreover, the high-frequency module 1e according to the ninth embodiment includes an electronic component 49 and a plurality of power amplifiers 151. The plurality of power amplifiers 151 include a plurality of amplifier circuits 426 and a plurality of amplifier circuits 153. The plurality of amplifier circuits 153 are connected in series to the plurality of amplifier circuits 426 in a one-to-one relationship. The second electronic component 42 includes the plurality of amplifier circuits 426. The electronic component 49 includes an amplifier circuit 153c included in the plurality of amplifier circuits 153. Each of the plurality of first electronic components 41 includes an amplifier circuit 153a or 153b included in the plurality of amplifier circuits 153. This allows the amplifier circuit 153 included in the first electronic component 41 to be smaller than a single power amplifier 151.

[0137] Tenth Embodiment (1) Configuration As shown in FIGS. 14 to 17 , a high-frequency module 1i according to the tenth embodiment includes circuit elements 491 to 494 instead of the circuit elements 45 and 46 of the high-frequency module 1f according to the eighth embodiment. Furthermore, in the high-frequency module 1i, some of the circuit elements L1 to L3 (see FIG. 18 ) are disposed on the submodule substrate 3. Note that, as in FIGS. 8 and 9 , the metal layer 72, the first resin layer 61, and the second resin layer 62 are omitted in FIGS. 14 and 15 . Furthermore, FIG. 14 is a plan view of the main surface of the first electronic component 41 facing the second electronic component 42, with the second electronic component 42 being indicated by phantom lines.

[0138] As shown in FIGS. 15 and 16 , the submodule substrate 3 includes a plurality of conductive layers 36 (two in FIG. 16 ) and a plurality of insulating layers 37 (three in FIG. 16 ). Each of the insulating layers 37 is made of, for example, polyimide. Each of the insulating layers 37 has through holes 371 to 373. The conductive layers 36 are made of, for example, metal foil, specifically, copper foil formed by plating. Note that in FIG. 16 , the positions corresponding to the ends of the insulating layers 37 for each of the conductive layers 36 are indicated by two-dot chain lines. Also, in FIG. 16 , only a portion of each of the conductive layers 36 is shown.

[0139] Specifically, the submodule substrate 3 is formed by stacking an insulating layer 37c, a conductive layer 36b, an insulating layer 37b, a conductive layer 36a, and an insulating layer 37a in this order. The insulating layer 37a has two main surfaces, a first main surface facing the conductive layer 36a, and a second main surface included in the third main surface 31 of the submodule substrate 3. The insulating layer 37a has a plurality of through holes 371. The through holes 371 correspond one-to-one to the electrodes 51 of the first electronic component 41. The through holes 371a of the insulating layer 37a correspond to the electrodes 51a of the first electronic component 41 (see FIG. 14 ). The first electronic component 41 includes a power amplifier 151 (see FIG. 3 ). The power amplifier 151 includes a transistor Q1 (see FIG. 18 ). The electrode 51a is connected to the output terminal of the transistor Q1 (the collector terminal of the transistor Q1, which is a bipolar transistor in FIG. 18 ). That is, the electrode 51 a is the output terminal of the power amplifier 151 .

[0140] The conductive layer 36a includes a pad electrode P11. The pad electrode P11 overlaps with the through-hole 371a of the insulating layer 37a in a plan view from the direction D1. The pad electrode P11 is electrically connected to one electrode 51a of the plurality of electrodes 51 of the first electronic component 41 arranged on the third main surface 31 of the submodule substrate 3.

[0141] The insulating layer 37b is provided with a through hole 372. In a plan view from the direction D1, the through hole 372 of the insulating layer 37b overlaps with the pad electrode P11.

[0142] The conductive layer 36b includes a pad electrode P22. The pad electrode P22 overlaps with the through-hole 372 of the insulating layer 37b in a plan view from the direction D1. Therefore, the pad electrode P22 is electrically connected to the electrode 51a of the first electronic component 41 via the pad electrode P11. The conductive layer 36b further includes pad electrodes P21 and P23. The conductive layer 36b also includes a wiring pattern conductor PT21 that connects the pad electrode P21 and the pad electrode P22, and a wiring pattern conductor PT22 that connects the pad electrode P21 and the pad electrode P23.

[0143] Of the two main surfaces of the insulating layer 37c, a first main surface faces the conductive layer 36b, and a second main surface is included in the fourth main surface 32 (see FIG. 1) of the submodule substrate 3. A plurality of through holes 373 are provided in the insulating layer 37c. In plan view from the direction D1, the pad electrode P21 overlaps the through hole 373a of the insulating layer 37c. Furthermore, in plan view from the direction D1, the pad electrode P23 overlaps the through hole 373b of the insulating layer 37c. The pad electrodes P21 and P23 are connected to electrodes 24 (see FIG. 1) arranged on the third main surface 31 (see FIG. 1) of the mounting substrate 2, which faces the fourth main surface 32 (see FIG. 1) of the submodule substrate 3.

[0144] The submodule substrate 3 is manufactured, for example, by the following manufacturing process. First, an insulating material layer is formed on a support substrate such as a silicon substrate using the material of the insulating layer 37c. Next, a plurality of through holes 373 are formed in the insulating material layer by patterning using alkaline dissolution or the like, thereby forming the insulating layer 37c. Then, a conductive material layer is formed on the insulating layer 37c by, for example, plating using the material of the conductive layer 36b. Next, the conductive material layer is shaped into pad electrodes P21 to P23 and wiring pattern conductors PT21 and PT22 by patterning using etching or the like, thereby forming the conductive layer 36b. Through similar processes, the insulating layer 37b is formed on the conductive layer 36b and the insulating layer 37b, the conductive layer 36a is formed on the insulating layer 37b, and the insulating layer 37a is formed on the conductive layer 36a and the insulating layer 37b. In this manner, the submodule substrate 3 is formed on the support substrate. Then, after the first electronic component 41 and the second electronic component 42 are mounted on the submodule substrate 3, the submodule 4 including the submodule substrate 3 is peeled off from the support substrate.

[0145] A third matching circuit 141 (see FIG. 3 ) and a power feed circuit 181 (see FIG. 18 ), which are connected to a power amplifier 151, are provided in an area 49a (see FIGS. 14 and 17 ) of the mounting board 2. As shown in FIG. 15 , the mounting board 2 includes a plurality of conductive layers 291 and a ground layer 292. Each of the plurality of conductive layers 291 is disposed on a plurality of insulating layers 28 (see FIG. 17 ). The plurality of insulating layers 28 includes insulating layers 28a, 28b, and 28c. The insulating layers 28c, 28b, and 28a are stacked in this order. One of the two main surfaces of the insulating layer 28a is included in the first main surface 21 of the mounting board 2. The plurality of conductive layers 291 includes wiring pattern conductors PT41, PT42, PT43, and PT51.

[0146] The mounting board 2 also includes a plurality of via conductors V11 to V21 extending in direction D1. More specifically, the via conductors V11, V12, V16, V17, V18, and V20 are arranged between the first main surface 21 of the mounting board 2 and the main surface of the insulating layer 28b on the first main surface 21 side. The via conductor V13 is arranged between the first main surface 21 of the mounting board 2 and the main surface of the insulating layer 28c on the first main surface 21 side. The via conductor V21 is arranged between the main surface of the insulating layer 28b on the first main surface 21 side and the main surface of the insulating layer 28c on the first main surface 21 side. The via conductors V14, V15, and V19 are arranged between the first main surface 21 and the ground layer 292 (see FIG. 15 ).

[0147] Circuit elements 491 to 494 are arranged in an area 49a of the first main surface 21 of the mounting substrate 2. The circuit elements 491, 492, and 494 are surface-mount capacitors. The circuit element 493 is a surface-mount inductor.

[0148] As shown in Fig. 18 , the power supply circuit 181 is a circuit that supplies power to the power amplifier 151 via a node N1. The power supply circuit 181 includes a power supply path PR1, a capacitor C3, and an inductor L3. The power supply path PR1 is connected to a wiring pattern conductor PT51 (see Fig. 17 ). The wiring pattern conductor PT51 is disposed on the insulating layer 28c and is connected to the via conductors V13 and V21.

[0149] As shown in Fig. 17, the via conductor V13 connects the wiring pattern conductor PT51 on the insulating layer 28c to the circuit element 491 on the insulating layer 28a (on the first main surface 21). The capacitor C3 (see Fig. 18) includes the circuit element 491. The circuit element 491 is connected to the via conductor V13 and the via conductor V14. The via conductor V14 connects the circuit element 491 to the ground layer 292 (see Fig. 15).

[0150] The wiring pattern conductor PT51 includes a loop-shaped conductor between the power supply path PR1 and the via conductor V21 in a plan view from direction D1. The via conductor V21 connects the wiring pattern conductor PT51 on the insulating layer 28c to the wiring pattern conductor PT41 on the insulating layer 28b. The wiring pattern conductor PT41 is connected to the via conductor V21 and the via conductor V12. The wiring pattern conductor PT41 includes a loop-shaped conductor in a plan view from direction D1. The via conductor V12 connects the wiring pattern conductor PT41 on the insulating layer 28b to the pad electrode P23 of the submodule substrate 3, which is disposed on the insulating layer 28a (on the first main surface 21). The pad electrode P22 of the submodule substrate 3 corresponds to the node N1, and the wiring pattern conductor PT22 of the submodule substrate 3 is included in the power supply circuit 181.

[0151] The wiring pattern conductors PT51 and PT41 of the mounting substrate 2 and the wiring pattern conductor PT22 of the submodule substrate 3 are connected in series in this order and include a spiral-shaped conductor having a winding axis along direction D1. The wiring pattern conductors PT51 and PT41 of the mounting substrate 2 and the wiring pattern conductor PT22 of the submodule substrate 3 are included in inductor L3 (see FIG. 18 ). In other words, inductor L3 includes the wiring pattern conductor PT22, which is a partial element (corresponding to a first partial element) provided within the submodule substrate 3, and the wiring pattern conductors PT51 and PT41, which are partial elements (corresponding to a second partial element) disposed on the mounting substrate 2. Because the wiring pattern conductors PT22, PT51, and PT41 have winding axes along direction D1, the height of inductor L3 can be reduced and it is easy to manufacture.

[0152] In a plan view from direction D1, the wiring pattern conductors PT51 and PT41 of the mounting substrate 2 and the wiring pattern conductor PT22 of the submodule substrate 3 at least partially overlap one side 421 of the second electronic component 42. This makes it possible to shorten the wiring length between the power amplifier 151 and the inductor L3, thereby improving the electrical characteristics of the high-frequency module 1i, including the amplification efficiency. Furthermore, it is possible to suppress the radiation of unnecessary signals to nearby areas from unnecessary extended wiring, thereby preventing unnecessary electromagnetic interference within the high-frequency module 1i.

[0153] The wiring pattern conductor PT22 is arranged to be constructively coupled with the wiring pattern conductors PT51 and PT41. That is, the wiring pattern conductors PT22, PT51, and PT41 are arranged so that the magnetic field caused by the current flowing through the wiring pattern conductor PT22 and the magnetic field caused by the current flowing through the wiring pattern conductors PT51 and PT41 are oriented in the same direction.

[0154] More specifically, the wiring pattern conductor PT22, and the wiring pattern conductors PT51 and PT41 have winding axes aligned with direction D1. Furthermore, the wiring pattern conductors PT51 and PT41 overlap in a plan view from direction D1, which is the winding axis. Furthermore, the wiring pattern conductors PT22, PT51, and PT41 are arranged such that, when a current flows through the inductor L3, the magnetic fields generated by the wiring pattern conductor PT22 and the magnetic fields generated by the wiring pattern conductors PT51 and PT41 reinforce each other. This increases the inductance value of the inductor L3 due to self-induction, making it easy to achieve both miniaturization and an improved Q value.

[0155] In the high-frequency module 1 i according to the tenth embodiment, at least a portion of the inductor L 3 , which is a circuit element included in the power feed circuit 181 , is internally provided in the submodule substrate 3 .

[0156] As shown in Fig. 18, the third matching circuit 141 (see Fig. 3) includes a signal path SR1, inductors L1 and L2, and capacitors C1 and C2. The signal path SR1 is connected to the wiring pattern conductor PT43 (see Fig. 17). The wiring pattern conductor PT43 is disposed on the insulating layer 28b and is connected to the via conductors V18 and V20.

[0157] The via conductor V20 connects the wiring pattern conductor PT43 on the insulating layer 28b to a circuit element 494 on the insulating layer 28a (on the first main surface 21). The capacitor C2 (see FIG. 18) includes a circuit element 494. The circuit element 494 is connected to the via conductor V19 and the via conductor V20. The via conductor V19 connects the circuit element 494 to the ground layer 292 (see FIG. 15).

[0158] The via conductor V18 connects the wiring pattern conductor PT43 on the insulating layer 28b to the circuit element 493 on the insulating layer 28a (on the first main surface 21). The inductor L2 (see FIG. 18) includes the circuit element 493. The circuit element 493 is connected to the via conductor V17 and the via conductor V18. The via conductor V17 connects the circuit element 493 to the wiring pattern conductor PT42 on the insulating layer 28b.

[0159] The wiring pattern conductor PT42 is connected to the via conductors V17, V16, and V11. The via conductor V16 connects the wiring pattern conductor PT42 on the insulating layer 28b to a circuit element 492 on the insulating layer 28a (on the first main surface 21). The capacitor C1 (see FIG. 18) includes a circuit element 492. The circuit element 492 is connected to the via conductors V15 and V16. The via conductor V15 connects the circuit element 492 to the ground layer 292 (see FIG. 15).

[0160] The wiring pattern conductor PT42 includes a loop-shaped conductor when viewed in a plan view from direction D1. The via conductor V11 is connected to the wiring pattern conductor PT42 on the insulating layer 28b and to a pad electrode P21 of the submodule substrate 3, which is disposed on the insulating layer 28a (on the first main surface 21). The pad electrode P22 of the submodule substrate 3 corresponds to node N1, and the wiring pattern conductor PT21 of the submodule substrate 3 is included in the third matching circuit 141.

[0161] The wiring pattern conductor PT42 of the mounting substrate 2 and the wiring pattern conductor PT21 of the submodule substrate 3 are connected in series in this order and include a spiral-shaped conductor. The wiring pattern conductor PT42 of the mounting substrate 2 and the wiring pattern conductor PT21 of the submodule substrate 3 are included in an inductor L1 (see FIG. 18 ). In other words, the inductor L1 includes the wiring pattern conductor PT21, which is a partial element (corresponding to a first partial element) provided within the submodule substrate 3, and the wiring pattern conductor PT42, which is a partial element (corresponding to a second partial element) disposed on the mounting substrate 2.

[0162] In a plan view from the direction D1, the wiring pattern conductor PT42 of the mounting substrate 2 and the wiring pattern conductor PT21 of the submodule substrate 3 at least partially overlap with one side 421 of the second electronic component 42.

[0163] The wiring pattern conductors PT21 and PT42 are arranged so as to be cooperatively coupled.

[0164] In the high-frequency module 1 i according to the tenth embodiment, at least a portion of the inductor L 1 , which is a circuit element included in the third matching circuit 141 , is internally provided in the submodule substrate 3 .

[0165] Here, inductor L1 and inductor L2 are connected in series without any other elements between them. In other words, inductor L1 and inductor L2 can be considered as a single inductor. In other words, the inductor, which is a circuit element included in the third matching circuit 141, includes the wiring pattern conductor PT21, which is a first partial element, as a part that is internally provided in the submodule substrate 3, and the wiring pattern conductor PT42, which is a second partial element, and the circuit element 493, as a part that is disposed on the mounting substrate 2.

[0166] Furthermore, a portion of each of inductor L1 and inductor L3 is internally mounted within the submodule substrate 3. Furthermore, inductor L1 is included in the third matching circuit 141, and inductor L3 is included in the power feed circuit 181. In a plan view from direction D1, inductor L1 and inductor L3 preferably overlap. This allows inductor L1 and inductor L3 to be additively coupled or differentially coupled. Therefore, in the third matching circuit 141 and the power feed circuit 181, it is possible to improve the inductance value through magnetic coupling, or to cancel out parasitic inductance, for example.

[0167] (2) Effects The high-frequency module 1i according to the tenth embodiment further includes a third matching circuit 141. The first electronic component 41 includes a power amplifier 151. The third matching circuit 141 is connected to the power amplifier 151. The third matching circuit 141 includes circuit elements L1, C1, and C2 arranged on at least one of the mounting substrate 2 and the submodule substrate 3. This allows the high-frequency module 1i to shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit elements L1, C1, and C2, thereby improving the electrical characteristics of the high-frequency module 1i, including the amplification efficiency. Furthermore, the high-frequency module 1i can suppress unwanted signal radiation to nearby areas from unnecessary extended wiring, thereby preventing unwanted electromagnetic interference within the high-frequency module 1i.

[0168] Moreover, the high-frequency module 1i according to the tenth embodiment further includes a power feed circuit 181. The first electronic component 41 includes a power amplifier 151. The power feed circuit 181 is connected to the power amplifier 151. The power feed circuit 181 includes circuit elements L3 and C3 that are arranged on at least one of the mounting substrate 2 and the submodule substrate 3. As a result, the high-frequency module 1i can shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit elements L3 and C3, thereby improving the electrical characteristics of the high-frequency module 1i, including the amplification efficiency.

[0169] Furthermore, in the high-frequency module 1i according to the tenth embodiment, the circuit elements L1 and L3 are inductors, transformers, or baluns, at least a portion of which is internally mounted on the mounting substrate 2 or the submodule substrate 3. In a plan view from the first direction D1, the circuit elements L1 and L3 overlap with one side 421 of the second electronic component 42. This allows the high-frequency module 1i to shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the circuit elements L3 and C3, thereby improving the electrical characteristics of the high-frequency module 1i, including the amplification efficiency.

[0170] Furthermore, at least a portion of the circuit elements L1 and L3 is disposed within the submodule substrate 3. As a result, according to the high-frequency module 1i, the distance between the circuit elements L1 and L3 and the ground layer disposed within the mounting substrate 2 is increased, thereby enabling the Q value of the circuit elements L1 and L3 to be increased. Furthermore, compared to when the third matching circuit 141 or the power feed circuit 181 is entirely disposed on the mounting substrate 2, the high-frequency module 1i can be made more compact.

[0171] The circuit elements L1 and L3 include first partial elements PT22 and PT21 that are mounted inside the submodule substrate 3 and second partial elements PT41, PT51, and PT42 that are mounted on the mounting substrate. The first partial elements PT22 and PT21 and the second partial elements PT41, PT51, and PT42 are arranged so as to be constructively coupled. As a result, in the high-frequency module 1i, the first partial elements PT22 and PT21 and the second partial elements PT41, PT51, and PT42 perform self-induction, thereby improving the inductance and Q values ​​of the circuit elements L1 and L3. This improves the efficiency of the power amplifier 151.

[0172] (3) Modifications (3.1) Modification 1 As shown in FIGS. 19 and 20 , in a high-frequency module 1i according to Modification 1 of the tenth embodiment, a third matching circuit 141 (see FIG. 18 ) and a power supply circuit 181 (see FIG. 18 ) are provided in the region 49b of the mounting substrate 2 of the high-frequency module 1i according to the tenth embodiment.

[0173] As shown in FIG. 20, the submodule substrate 3 includes a plurality of conductive layers 36 (two in FIG. 20) and a plurality of insulating layers 37 (three in FIG. 20).

[0174] Specifically, the submodule substrate 3 is formed by stacking an insulating layer 37f, a conductive layer 36d, an insulating layer 37e, a conductive layer 36c, and another insulating layer 37d in this order. Of the two main surfaces of the insulating layer 37d, a first main surface faces the conductive layer 36c, and a second main surface is included in the third main surface 31 of the submodule substrate 3. The insulating layer 37d has a plurality of through holes 371. The through holes 371 correspond one-to-one to the plurality of electrodes 51 (see FIG. 14 ) of the first electronic component 41. Here, the through hole 371b of the insulating layer 37d corresponds to the electrode 51b (see FIG. 14 ) of the first electronic component 41. The first electronic component 41 includes a power amplifier 151 connected to the electrode 51b. The power amplifier 151 includes a transistor Q1. The electrode 51b is connected to the output terminal of the transistor Q1. That is, the electrode 51b is the output terminal of the power amplifier 151.

[0175] The conductive layer 36c includes a pad electrode P73. The pad electrode P73 overlaps with the through-hole 371b of the insulating layer 37d in a plan view from the direction D1. The pad electrode P73 is electrically connected to one electrode 51b of the multiple electrodes 51 of the first electronic component 41 arranged on the third main surface 31 of the submodule substrate 3.

[0176] The conductive layer 36c further includes pad electrodes P71 and P72. The conductive layer 36c also includes a wiring pattern conductor PT71 connecting the pad electrodes P71 and P72, and a wiring pattern conductor PT72 connecting the pad electrodes P72 and P73.

[0177] The insulating layer 37e has a plurality of (two in FIG. 20 ) through holes 374. In plan view from the direction D1, the through hole 374a overlaps with the pad electrode P71. In plan view from the direction D1, the through hole 374b overlaps with the pad electrode P72.

[0178] The conductive layer 36d includes pad electrodes P81 and P82. The pad electrode P81 overlaps with the through hole 374a of the insulating layer 37e in a plan view from the direction D1. Therefore, the pad electrode P81 is electrically connected to the electrode 51a of the first electronic component 41 via the pad electrode P71, the wiring pattern conductor PT71, and the pad electrode P73. The pad electrode P82 overlaps with the through hole 374b of the insulating layer 37e in a plan view from the direction D1. Therefore, the pad electrode P82 is electrically connected to the electrode 51a of the first electronic component 41 via the pad electrode P72, the wiring pattern conductor PT72, and the pad electrode P73. The pad electrode P73 corresponds to the node N1.

[0179] The conductive layer 36d further includes a pad electrode P83 and a wiring pattern conductor PT81 that connects the pad electrode P82 and the pad electrode P83.

[0180] The insulating layer 37f has a plurality of (two in FIG. 20 ) through holes 375. In plan view from direction D1, the through hole 375a overlaps with the pad electrode P81. In plan view from direction D1, the through hole 375b overlaps with the pad electrode P83. The pad electrodes P81 and P83 are connected to electrodes 24 (see FIG. 1 ) that are arranged on the first main surface 21 (see FIG. 1 ) of the mounting substrate 2 that faces the fourth main surface 32 (see FIG. 1 ) of the submodule substrate 3.

[0181] A third matching circuit 141 and a power feed circuit 181 (see FIG. 18) connected to the power amplifier 151 are provided in region 49b (see FIGS. 15 and 19) of the mounting board 2. The mounting board 2 includes, in region 49b, a plurality of via conductors V31 to V40 extending in direction D1. The mounting board 2 also includes wiring pattern conductors PT61 to PT64 that are internally provided in the mounting board 2 in region 49b.

[0182] More specifically, the wiring pattern conductors PT61 to PT64 are arranged on a specific insulating layer 28 among the multiple insulating layers 28 (see FIG. 17) included in the mounting board 2. The via conductors V31, V32, V34, V36, V37, V38, and V40 are arranged between the first main surface 21 (see FIG. 1) of the mounting board 2 and the main surface on the first main surface 21 side of the specific insulating layer 28. The via conductors V33, V35, and V39 are arranged between the first main surface 21 (see FIG. 1) of the mounting board 2 and the ground layer 292 (see FIG. 15).

[0183] 19, the circuit elements 495 to 498 are arranged on the first main surface 21 of the mounting substrate 2. The circuit elements 495, 496, and 498 are surface-mounted capacitors. The circuit element 497 is a surface-mounted inductor.

[0184] 18, the power supply circuit 181 includes a power supply path PR1, a capacitor C3, and an inductor L3. The power supply path PR1 is connected to a wiring pattern conductor PT64 (see FIG. 19). The wiring pattern conductor PT64 is disposed inside the mounting substrate 2 and is connected to a via conductor V34.

[0185] As shown in Fig. 19 , the via conductor V34 connects the wiring pattern conductor PT64, the wiring pattern conductor PT61, and the circuit element 495 on the first main surface 21. The capacitor C3 (see Fig. 18 ) includes the circuit element 495. The circuit element 495 is connected to the via conductor V33 and the via conductor V34. The via conductor V33 connects the circuit element 495 and the ground layer 292 (see Fig. 14 ).

[0186] 19 , the wiring pattern conductor PT61 is disposed within the mounting substrate 2 and is connected to the via conductors V34 and V32. The wiring pattern conductor PT61 includes a loop-shaped conductor when viewed from the direction D1. The via conductor V32 is connected to the wiring pattern conductor PT61 and to a pad electrode P83 of the submodule substrate 3, which is disposed on the first main surface 21.

[0187] The wiring pattern conductor PT61 on the mounting substrate 2 and the wiring pattern conductors PT81 and PT72 on the submodule substrate 3 are connected in series in this order and include a spiral-shaped conductor having a winding axis along direction D1. In other words, the inductor L3 includes the wiring pattern conductors PT81 and PT72, which are partial elements (corresponding to first partial elements) provided within the submodule substrate 3, and the wiring pattern conductor PT61, which is a partial element (corresponding to second partial element) disposed on the mounting substrate 2.

[0188] In a plan view from direction D1, the wiring pattern conductor PT61 of the mounting substrate 2 and the wiring pattern conductors PT81 and PT72 of the submodule substrate 3 at least partially overlap one side 421 of the second electronic component 42.

[0189] The wiring pattern conductor PT61, the wiring pattern conductor PT81, and the wiring pattern conductor PT72 are arranged so as to be cooperatively coupled.

[0190] In the high-frequency module 1i according to Modification 1 of Embodiment 10, at least a portion of the inductor L1, which is a circuit element included in the third matching circuit 141, is provided internally in the submodule substrate 3. The wiring pattern conductor PT61 of the mounting board 2 and the wiring pattern conductors PT81 and PT72 of the submodule substrate 3 are included in the inductor L3 (see FIG. 18 ). At least a portion of the inductor L3, which is a circuit element included in the power feed circuit 181, is provided internally in the submodule substrate 3.

[0191] 18 , the third matching circuit 141 includes a signal path SR1, inductors L1 and L2, and capacitors C1 and C2. The signal path SR1 is connected to a wiring pattern conductor PT63. The wiring pattern conductor PT63 is disposed within the mounting board 2 and is connected to via conductors V38 and V40.

[0192] The via conductor V40 connects the wiring pattern conductor PT63 and a circuit element 498 on the first main surface 21. The capacitor C2 (see FIG. 18) includes a circuit element 498. The circuit element 498 is connected to the via conductor V39 and the via conductor V40. The via conductor V39 connects the circuit element 498 and the ground layer 292 (see FIG. 15).

[0193] The via conductor V38 connects the wiring pattern conductor PT63 and a circuit element 497 on the first main surface 21. The inductor L2 (see FIG. 18 ) includes a circuit element 497. The circuit element 497 is connected to the via conductor V37 and the via conductor V38. The via conductor V37 connects the circuit element 497 and a wiring pattern conductor PT62 provided inside the mounting board 2.

[0194] The wiring pattern conductor PT62 is connected to the via conductors V37, V36, and V31. The via conductor V36 connects the wiring pattern conductor PT62 to a circuit element 496 on the first main surface 21. The capacitor C1 (see FIG. 18) includes a circuit element 496. The circuit element 496 is connected to the via conductors V35 and V36. The via conductor V35 connects the circuit element 496 to the ground layer 292 (see FIG. 15).

[0195] The wiring pattern conductor PT62 includes a loop-shaped conductor when viewed from the direction D1 in a plan view. The via conductor V31 is connected to the wiring pattern conductor PT62 and a pad electrode P81 of the submodule substrate 3, which is disposed on the first main surface 21.

[0196] The wiring pattern conductor PT62 of the mounting substrate 2 and the wiring pattern conductor PT71 of the submodule substrate 3 are connected in series in this order and include a spiral-shaped conductor. The wiring pattern conductor PT62 of the mounting substrate 2 and the wiring pattern conductor PT71 of the submodule substrate 3 are included in an inductor L1 (see FIG. 18 ). In other words, the inductor L1 includes the wiring pattern conductor PT71, which is a partial element (corresponding to a first partial element) provided within the submodule substrate 3, and the wiring pattern conductor PT62, which is a partial element (corresponding to a second partial element) disposed on the mounting substrate 2.

[0197] In a plan view from direction D1, the wiring pattern conductor PT62 of the mounting substrate 2 and the wiring pattern conductor PT71 of the submodule substrate 3 at least partially overlap with one side 421 of the second electronic component 42.

[0198] The wiring pattern conductors PT62 and PT71 are arranged so as to be cooperatively coupled.

[0199] In the high-frequency module 1 i according to the first modification of the tenth embodiment, at least a portion of the inductor L 1 , which is a circuit element included in the third matching circuit 141 , is internally provided in the submodule substrate 3 .

[0200] Here, inductor L1 and inductor L2 are connected in series without any other elements between them. In other words, inductor L1 and inductor L2 can be considered as a single inductor. In other words, the inductor, which is a circuit element included in the third matching circuit 141, includes the wiring pattern conductor PT71, which is a first partial element, as a part that is internally provided in the submodule substrate 3, and the wiring pattern conductor PT62, which is a second partial element, and the circuit element 497, as a part that is disposed on the mounting substrate 2.

[0201] Furthermore, a portion of each of inductor L1 and inductor L3 is internally mounted within the submodule substrate 3. Furthermore, inductor L1 is included in the third matching circuit 141, and inductor L3 is included in the power feed circuit 181. In a plan view from direction D1, inductor L1 and inductor L3 preferably overlap. This allows inductor L1 and inductor L3 to be additively coupled or differentially coupled. Therefore, in the third matching circuit 141 and the power feed circuit 181, it is possible to improve the inductance value through magnetic coupling, or to cancel out parasitic inductance, for example.

[0202] The high-frequency module 1i according to the first modification of the tenth embodiment can also provide the same effects as those of the high-frequency module 1i according to the tenth embodiment.

[0203] (3.2) Modification 2 (3.2.1) Configuration The high-frequency module 1i according to Modification 2 of Embodiment 10 includes, in addition to the components of the high-frequency module 1i according to Embodiment 10 or Modification 1 of Embodiment 10, an inductor L4 that is included in both the third matching circuit 141 and the power supply circuit 181, as shown in FIG. 21 .

[0204] 21 , for example, the inductor L4 is disposed between the node N1 and the power amplifier 151. That is, the third matching circuit 141 includes an inductor L4 and an inductor L1. The power feed circuit 181 includes an inductor L4 and an inductor L3. As shown in FIG. 21 , the inductor L1 included in the third matching circuit 141 is connected to the inductor L4. Furthermore, the inductor L3 included in the power feed circuit 181 is connected to the inductor L4. The inductor L1, the inductor L3, and the inductor L4 correspond to the first circuit element, the second circuit element, and the third circuit element, respectively.

[0205] In the high-frequency module 1i according to the second modification of the tenth embodiment, the inductor L4 is disposed on at least one of the mounting substrate 2 and the submodule substrate 3. More specifically, at least one of the inductors L1, L3, and L4 is at least partially embedded within the submodule substrate 3. The specific aspects of the inductor L1, L3, or L4 are similar to those of the inductor L1 or L3 of the high-frequency module 1i according to the tenth embodiment or the first modification of the tenth embodiment, and therefore will not be described again.

[0206] (3.2.2) Effects The high-frequency module 1i according to the second modification of the tenth embodiment further includes a third matching circuit 141 and a power feed circuit 181. The third matching circuit 141 includes an inductor L1. The power feed circuit 181 includes an inductor L3. The first electronic component 41 includes a power amplifier 151. The third matching circuit 141 and the power feed circuit 181 are connected to the power amplifier 151. The inductor L1 of the third matching circuit 141 is connected to an inductor L4 that is arranged on at least one of the mounting board 2 and the submodule substrate 3. The inductor L3 of the power feed circuit 181 is connected to the inductor L4. As a result, the high-frequency module 1i according to the second modification of the tenth embodiment can shorten the wiring length between the power amplifier 151 included in the first electronic component 41 and the inductors L1, L3, and L4, thereby improving the electrical characteristics of the high-frequency module 1i, including the amplification efficiency. Furthermore, since the inductor L4 can be shared by the third matching circuit 141 and the power feeding circuit 181, it is possible to reduce the number of components in the high-frequency module 1i and thereby achieve miniaturization.

[0207] Furthermore, in the high-frequency module 1i according to the second modification of the tenth embodiment, at least a portion of at least one of the inductors L1, L3, and L4 is provided internally in the submodule substrate 3. This allows the high-frequency module 1i to be made smaller than when the third matching circuit 141 and the power feed circuit 181 are entirely disposed on the mounting substrate 2.

[0208] (Modifications) In the high-frequency modules 1 to 1d according to the first to sixth embodiments, the sub-module 4 includes one first electronic component 41, but the sub-module 4 may include a plurality of first electronic components 41.

[0209] Furthermore, in the high-frequency modules 1 to 1i according to embodiments 1 to 10, the mounting substrate 2 is a resin multilayer substrate, but the mounting substrate 2 may also be an LTCC (Low Temperature Co-fired Ceramics) substrate, an HTCC (High Temperature Co-fired Ceramics) substrate, or a printed wiring board.

[0210] The mounting substrate 2 may also be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed in a predetermined pattern. When there are multiple insulating layers, the multiple insulating layers are formed in a predetermined pattern defined for each layer. The conductive layer is formed in a predetermined pattern different from the predetermined pattern of the insulating layer. When there are multiple conductive layers, the multiple conductive layers are formed in a predetermined pattern defined for each layer. The conductive layer may include one or more rewiring portions. In the wiring structure, the multilayer structure has two surfaces opposing each other in the thickness direction, of which the first surface is the first main surface 21 of the mounting substrate 2 and the second surface is the second main surface 22 of the mounting substrate 2. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate or a substrate configured of multiple layers.

[0211] Furthermore, in the high frequency modules 1 to 1i according to the first to tenth embodiments, the submodule substrate 3 is a wiring structure, but the submodule substrate 3 may be an LTCC substrate, an HTCC substrate, a resin multilayer substrate, or a printed wiring board.

[0212] Furthermore, although the high-frequency modules 1 to 1i according to the first to tenth embodiments include the metal layer 72, the high-frequency modules 1 to 1i may not include the metal layer 72. Furthermore, although the high-frequency modules 1a to 1c according to the second, third, and fifth embodiments include the metal layer 71, the high-frequency modules 1a to 1c may not include the metal layer 71.

[0213] Furthermore, in the high-frequency modules 1i according to the tenth embodiment and each of the modifications of the tenth embodiment, each of the inductor L1 and the inductor L2 is partially embedded in the submodule substrate 3 and partially embedded in the mounting substrate 2, but this configuration is not limited to this. For example, the inductor L1 may be partially disposed on the third main surface 31 of the submodule substrate 3, or partially disposed on the first main surface 21 of the mounting substrate 2. For example, the inductor L1 may be entirely disposed on the submodule substrate 3. For example, the inductor L1 may include a surface-mount inductor, and the surface-mount inductor may be disposed on either the mounting substrate 2 or the submodule substrate 3. The same applies to the inductor L2 and the inductor L3 according to the second modification of the tenth embodiment.

[0214] 1, 1a, 1b, 1c, 1d, 1e, 1f, 1g, 1h, 1i High frequency module 2 Mounting substrate 21 First main surface 22 Second main surface 24 Electrode 25 Solder 26 Electrode 27 Solder 28, 28a, 28b, 28c Insulating layer 291 Conductive layer 292 Ground layer 3 Submodule substrate (support member) 31 Third main surface 32 Fourth main surface 33 Electrode 34 Electrode (first electrode) 34a Second electrode 35 Solder 36, 36a, 36b, 36c, 36d Conductive layer 37, 37a, 37b, 37c, 37d, 37e, 37f Insulating layer 371, 371a, 371b, 372, 373, 373a, 373b, 374, 374a, 374b, 375, 375a, 375b Through hole 4 Submodule 41, 41a, 41b First electronic component 411 Area 412 Area 42 Second electronic component 421 Side (one side) 422 Side 423 Side 424 Side 425 Control circuit 426 Amplification circuit (first amplification circuit) 427 Switch 428 Switch 429 Switch 420 Switch 43 Electronic component 44 Third electronic component 45 Circuit element 46 Circuit element 47 Circuit element 48 Circuit element 49 Electronic component (IC) 49a,49b Region 8 Adhesive layer 110 Switch 111 Common terminal 112 Selection terminal 113 Selection terminal 121 First matching circuit 122 Second matching circuit 131 Transmitting filter 132 Receiving filter 141 Third matching circuit (matching circuit) 142 Fourth matching circuit 151 Power amplifier 151a, 151b Power amplifier (second power amplifier) ​​151c Power amplifier (first power amplifier) ​​152 Low noise amplifier 153, 153a, 153b, 153c Amplification circuit (second amplifier circuit) 181 Power feeding circuit 100 Communication device 10 External connection terminal 11 Antenna terminal 12 Signal input terminal 13 Signal output terminal 16 Antenna 17 Signal processing circuit 171 RF signal processing circuit 172 Baseband signal processing circuit 51 Electrode 51a Electrode 52 Electrode 52a Electrode 61 First resin layer (resin layer) 611 Side surface 612 Main surface 62 Second resin layer 621 Side surface 622 Main surface 71 Metal layer 72 Metal layer 91 Electrode D1 First direction D2 Second direction D3 Third direction C1, C2, C3 Capacitor (circuit element) L1 Inductor (circuit element, first circuit element) L2 Inductor (circuit element) L3 Inductor (circuit element, second circuit element) L4 Inductor (third circuit element) N1 Node P11, P21, P22, P23, P71, P72, P73, P81, P82, P83 Pad electrode SR1 Signal path PR1 Power supply path PT21, PT22, PT71, PT72, PT81 Wiring pattern conductor (first partial element) PT41, PT42, PT51, PT61, PT62 Wiring pattern conductor (second partial element) PT43, PT63, PT64 Wiring pattern conductor Q1 Transistor V11 to V21, V31 to V40 Via conductor,

Claims

1. A high-frequency module comprising: a mounting substrate having first and second main surfaces opposing each other; and a submodule arranged on the first main surface of the mounting substrate, wherein the submodule includes: a support member having third and fourth main surfaces opposing each other; a first electronic component arranged on the third main surface of the support member; a second electronic component arranged on the third main surface of the support member; and a resin layer covering at least a portion of the first electronic component and the second electronic component, wherein the first electronic component is arranged between the support member and the second electronic component.

2. The high-frequency module according to claim 1, wherein the support member of the submodule includes: a first electrode arranged on the third main surface of the support member and connected to the first electronic component; and a second electrode arranged on the third main surface of the support member and connected to the second electronic component, and the length of the second electrode in the thickness direction of the mounting board is longer than the length of the first electrode in the thickness direction of the mounting board.

3. The high frequency module according to claim 2, wherein the material of the second electrode is copper or a copper alloy.

4. A high-frequency module according to any one of claims 1 to 3, further comprising an adhesive layer disposed between the first electronic component and the second electronic component and in contact with both the first electronic component and the second electronic component.

5. The high frequency module according to claim 4, wherein the adhesive layer has a higher thermal conductivity than the resin layer.

6. The high frequency module according to claim 1, wherein the second electronic component has a portion exposed from the resin layer.

7. The high frequency module according to claim 6, further comprising a metal layer covering the resin layer, wherein the second electronic component is in contact with the metal layer.

8. The high-frequency module according to claim 7, wherein the metal layer includes a first portion covering the resin layer and a second portion covering the first main surface of the mounting substrate, the first portion and the second portion being in contact with each other.

9. The high frequency module according to any one of claims 6 to 8, wherein the first electronic component includes a power amplifier, and the second electronic component includes a control circuit for the power amplifier.

10. The high-frequency module according to any one of claims 1 to 9, further comprising a third electronic component disposed on the second main surface of the mounting board.

11. The high-frequency module according to any one of claims 1 to 10, further comprising an external connection terminal arranged on the second main surface of the mounting board, the first electronic component including a power amplifier, and the first electronic component and the external connection terminal overlap in a plan view from the thickness direction of the mounting board.

12. A high-frequency module according to any one of claims 1 to 11, wherein the second electronic component has a rectangular shape when viewed in a plan view from a first direction which is the thickness direction of the mounting board, and the second electronic component has a plurality of electrodes for connecting to the support member along three sides of its outer periphery when viewed in the first direction, except for one side which extends in a second direction which is the longitudinal direction of the first electronic component.

13. The high-frequency module according to claim 12, wherein, in a plan view from the first direction, the first electronic component intersects with the one side of the second electronic component, and the first electronic component has an electrode that overlaps with the one side of the second electronic component in a plan view from the first direction.

14. The high-frequency module according to claim 13, further comprising a matching circuit, wherein the first electronic component includes a power amplifier, the matching circuit is connected to the power amplifier, and the matching circuit includes a circuit element disposed on at least one of the mounting board and the support member.

15. The high-frequency module according to claim 13, further comprising a power supply circuit, wherein the first electronic component includes a power amplifier, the power supply circuit is connected to the power amplifier, and the power supply circuit includes a circuit element disposed on at least one of the mounting board and the support member.

16. The high-frequency module according to claim 14 or 15, wherein the circuit element is an inductor, a transformer, or a balun, at least a portion of which is internally mounted on the mounting board or the support member, and the circuit element overlaps with the one side of the second electronic component in a plan view from the first direction.

17. The high frequency module according to claim 16, wherein at least a portion of the circuit element is housed within the support member.

18. The high-frequency module according to claim 17, wherein the circuit element includes a first partial element mounted within the support member and a second partial element disposed on the mounting board, and the first partial element and the second partial element are arranged so as to be cooperatively coupled.

19. The high-frequency module according to claim 14 or 15, wherein the circuit element is a surface-mounted circuit element disposed on the first main surface of the mounting board.

20. The high-frequency module according to claim 13, further comprising: a matching circuit including a first circuit element; and a power supply circuit including a second circuit element, wherein the first electronic component includes a power amplifier, the matching circuit and the power supply circuit are connected to the power amplifier, the first circuit element of the matching circuit is connected to a third circuit element arranged on at least one of the mounting board and the support member, and the second circuit element of the power supply circuit is connected to the third circuit element.

21. The high-frequency module according to claim 20, wherein at least one of the first circuit element, the second circuit element, and the third circuit element is at least partially housed within the support member.

22. The high-frequency module according to any one of claims 1 to 21, further comprising an IC including a first power amplifier, wherein the first electronic component includes a second power amplifier different from the first power amplifier, and the second electronic component includes control circuits for the first power amplifier and the second power amplifier.

23. The high-frequency module according to claim 22, wherein the control circuit of the second electronic component supplies a bias to the first power amplifier and the second power amplifier.

24. A high-frequency module according to any one of claims 1 to 23, further comprising: an IC; and a plurality of power amplifiers, wherein the plurality of power amplifiers include a plurality of first amplifier circuits and a plurality of second amplifier circuits connected in series in a one-to-one relationship to the plurality of first amplifier circuits; the second electronic component includes the plurality of first amplifier circuits; the IC includes one second amplifier circuit included in the plurality of second amplifier circuits; and the first electronic component includes a second amplifier circuit different from the one second amplifier circuit among the plurality of second amplifier circuits.

25. A communication device comprising: a high-frequency module according to any one of claims 1 to 24; and a signal processing circuit connected to the high-frequency module.

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