Power semiconductor module

Abstract

A power semiconductor module (200) comprises: a power semiconductor chip (1) provided with two wiring boards (5, 6) and a power semiconductor element (100A) that is provided between the two wiring boards (5, 6) so as to connect wires (52, 62) to each other, the power semiconductor element (100A) being provided with a first electrode (11) and a second electrode (12) on a first surface (1a), and being provided with a third electrode (14) on a second surface (1b); and a first connection member (2) provided with a first conductive portion (21) that is provided to the first surface (1a) of the power semiconductor chip (1) so as to be electrically connected to the first electrode (11), a second conductive portion (22) that is provided so as to be electrically connected to the second electrode (12) and has a portion protruding outward from the outer peripheral edge of the power semiconductor chip 1 in plan view, and a first insulating layer (23) that wraps around the first conductive portion (21) and the second conductive portion (22). An insulating film (8) is provided to at least one of the wires (52, 62) of the two wiring boards (5, 6).

Description

Power Semiconductor Module

[0001] The present invention relates to a power semiconductor module.

[0002] A power semiconductor element is a semiconductor element that handles a large voltage or current and has a switching function. For example, Patent Document 1 discloses a power semiconductor module having a double-sided heat dissipation structure with heat sinks on both the upper and lower sides as a modularized version of such a power semiconductor element. Furthermore, Patent Document 2 discloses a power semiconductor element suitable for use in such a power semiconductor module, including a power semiconductor chip having a first electrode and a second electrode on a first surface and a third electrode on a second surface opposite to the first surface, the first electrode being provided in a main cell region, and a fourth electrode provided on the first surface of the power semiconductor chip so as to be electrically connected to the first electrode and having a protruding portion that protrudes outward from the outer periphery of the power semiconductor chip.

[0003] JP 2019-85631 A JP 2023-79124 A

[0004] However, when a power semiconductor module having a double-sided heat dissipation structure is fabricated using the power semiconductor element described in Patent Document 2, the following problem has been found. That is, there is a demand for miniaturization (low profile) of the power semiconductor module. In this case, the distance between the wires facing each other via the power semiconductor element becomes shorter. Furthermore, there is also a demand for an increase in battery voltage, and a higher voltage is applied to the wires facing each other. In such cases, it is necessary to reliably prevent dielectric breakdown. On the other hand, even if an attempt is made to fill the space between the wires with a filler or the like, bubbles are likely to form inside, and there is a possibility that dielectric breakdown cannot be sufficiently prevented.

[0005] An object of the present invention is to provide a power semiconductor module that can prevent dielectric breakdown.

[0006] According to the present invention, there is provided the following power semiconductor module: [1] A power semiconductor module comprising: two wiring boards, each having a base material and wiring; and a power semiconductor element provided between the two wiring boards so as to connect the wirings, wherein the power semiconductor element comprises: a power semiconductor chip having a first electrode and a second electrode on a first surface and a third electrode on a second surface opposite the first surface; and a first connecting member including: a first conductive portion provided on the first surface of the power semiconductor chip so as to be electrically connected to the first electrode, a second conductive portion provided on the first surface of the power semiconductor chip so as to be electrically connected to the second electrode and having a portion that protrudes outward from the outer periphery of the power semiconductor chip in a plan view, and a first insulating layer that encases the first conductive portion and the second conductive portion, and wherein an insulating film is provided on at least one of the wirings of the two wiring boards. [2] The power semiconductor module according to [1], wherein the power semiconductor element further comprises: a second connection member including a third conductive portion provided on the second surface of the power semiconductor chip so as to be electrically connected to the third electrode and a second insulating layer enclosing the third conductive portion; and an encapsulating resin layer enclosing at least the power semiconductor chip. [3] The power semiconductor module according to [1] or [2], wherein at least one of the wires of the two wiring substrates has a convex portion in which a portion of the wire is convex, and the power semiconductor element is disposed on the convex portion. [4] The power semiconductor module according to [3], wherein a peripheral portion of the power semiconductor element overlaps with the insulating film in a plan view. [5] The power semiconductor module according to any one of [1] to [4], further comprising a passive component on one of the wirings of the two wiring substrates, and the insulating film is provided on the other of the wirings of the two wiring substrates.[6] The power semiconductor module according to [5], wherein one of the wires of the two wiring substrates has a recess in which a portion of the wire is recessed, and the passive component is disposed in the recess. [7] The power semiconductor module according to any one of [1] to [6], wherein the insulating film is provided on both of the wires of the two wiring substrates.

[0007] According to one aspect of the present invention, it is possible to provide a power semiconductor module that can prevent dielectric breakdown.

[0008] Fig. 1 is a schematic diagram showing one aspect of a power semiconductor element used in an embodiment of the present invention. Fig. 2 is a cross-sectional view showing the II-II cross section of Fig. 1. Fig. 3 is a cross-sectional view showing one aspect of a power semiconductor element used in an embodiment of the present invention. Fig. 4 is a cross-sectional view showing a power semiconductor module according to a first embodiment of the present invention. Fig. 5 is a cross-sectional view showing a power semiconductor module according to a second embodiment of the present invention. Fig. 6 is a cross-sectional view showing a power semiconductor module according to a third embodiment of the present invention. Fig. 7 is a cross-sectional view showing a power semiconductor module according to a fourth embodiment of the present invention.

[0009] [First embodiment] Hereinafter, the present invention will be described with reference to the drawings, taking an embodiment as an example. The present invention is not limited to the content of the embodiment. Note that in the drawings, some parts are illustrated enlarged or reduced in size for ease of explanation.

[0010] (Power Semiconductor Element) First, the power semiconductor element used in this embodiment will be described. As shown in Figs. 1 and 2, the power semiconductor element 100 used in this embodiment includes a power semiconductor chip 1 and a first connecting member 2. The power semiconductor element 100 may include one power semiconductor chip 1, or may include two or more power semiconductor chips 1. When the power semiconductor element 100 includes one power semiconductor chip 1, the size (planar area) of the power semiconductor element 100 is 10 mm ２ More than 1000mm ２ Preferably, it is 20 mm or less. ２ More than 500 mm ２More preferably, it is 30 mm or less. ２ 150mm or more ２ More preferably, it is 40 mm or less. ２ Over 80mm ２ In addition, when the power semiconductor element 100 includes two power semiconductor chips 1, the size of the power semiconductor element 100 is preferably 20 mm or less. ２ More than 2000mm ２ Preferably, it is 40 mm or less. ２ More than 1000mm ２ More preferably, it is 60 mm or less. ２ More than 300 mm ２ More preferably, it is 80 mm or less. ２ 160mm or more ２ It is particularly preferable that the thickness is less than 100 μm. Furthermore, when the power semiconductor element 100 includes three or more power semiconductor chips 1, the size of the power semiconductor element 100 can be appropriately set by referring to the example when the power semiconductor element 100 includes one power semiconductor chip 1. The thickness of the power semiconductor element 100 is preferably 100 μm or more and 300 μm or less, more preferably 120 μm or more and 250 μm or less, and particularly preferably 150 μm or more and 200 μm or less. As described above, the power semiconductor module 200 according to this embodiment is required to be compact, and therefore the spacing between the wirings facing each other via the power semiconductor element 100 becomes shorter, which may cause dielectric breakdown. However, as will be described later, a structure such as the power semiconductor module 200 according to this embodiment can prevent dielectric breakdown.

[0011] The power semiconductor chip 1 includes a first electrode 11 and a second electrode 12 on a first surface 1a, a third electrode 14 on a second surface 1b opposite the first surface 1a, and a semiconductor chip body 13. Here, for example, the first electrode 11, the second electrode 12, and the third electrode 14 are a source electrode, a gate electrode, and a drain electrode, respectively. The power semiconductor chip 1 may be either a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). In the case of a MOSFET, the first electrode 11, the second electrode 12, and the third electrode 14 correspond to a source electrode, a gate electrode, and a drain electrode, respectively. In the case of an IGBT, the first electrode 11, the second electrode 12, and the third electrode 14 correspond to an emitter electrode, a base electrode, and a collector electrode, respectively. If the power semiconductor chip 1 is a MOSFET, the power semiconductor chip 1 may be a trench type in which a gate insulating layer is provided in a trench groove and a portion of the gate electrode is buried, or a planar type in which the gate insulating layer and the gate electrode are stacked. The material of the semiconductor chip body 13 is not particularly limited, and known semiconductor materials can be used. Specific examples of such materials include Si, SiC, GaN, GaAs, and diamond. Among these, wide bandgap semiconductors are preferred from the standpoint of dielectric breakdown strength, thermal conductivity, and the like. Examples of wide bandgap semiconductors include SiC, GaN, GaAs, and diamond.

[0012] The first connecting member 2 includes a first conductive portion 21 provided on the first surface 1a of the power semiconductor chip 1 so as to be electrically connected to the first electrode 11, a second conductive portion 22 provided so as to be electrically connected to the second electrode 12, and a first insulating layer 23 that encases the first conductive portion 21 and the second conductive portion 22. As shown in FIGS. 1 and 2 , the second conductive portion 22 has a portion that protrudes outward from the outer periphery of the power semiconductor chip 1 in a plan view. This allows a sufficient gap to be provided between the source electrode and the gate electrode in the power semiconductor element 100. This makes it possible to directly bond the power semiconductor element 100 to the wiring of a wiring board.

[0013] The distance from the end of the first conductive portion 21 to the end of the second conductive portion 22 on the upper surface (the surface not in contact with the power semiconductor chip 1) of the first connecting member 2 (hereinafter also referred to as creepage distance X (see FIG. 1 )) is preferably 0.1 mm or more and 4 mm or less, more preferably 0.2 mm or more and 3 mm or less, and particularly preferably 0.3 mm or more and 2 mm or less. If the creepage distance X is within the above range, a sufficient gap can be provided between the source electrode and the gate electrode. The thickness of the power semiconductor chip 1 is preferably 70 μm or more and 270 μm or less, more preferably 90 μm or more and 220 μm or less, and particularly preferably 100 μm or more and 200 μm or less.

[0014] Examples of materials for the first conductive portion 21 and the second conductive portion 22 include metals. Examples of metals include copper, aluminum, silver, and gold, as well as alloys containing these metals. Among these, copper or aluminum is preferred. The first insulating layer 23 is a layer made of an insulating resin composition. Examples of resins used in the resin composition include polyimide, polyetherimide, polyamide, polyamideimide, polymethylpentene, polyester, polyetheretherketone, liquid crystal polymer, polyphenylene ether, polyphenylene sulfide, polyolefin, syndiotactic polystyrene, epoxy resin, maleimide resin, phenolic resin, and melamine resin. Among these, polyimide or polyetherimide is preferred from the viewpoint of preventing dielectric breakdown. The resin composition may contain fillers and additives. Examples of fillers include silica, alumina, aluminum hydroxide, and magnesium hydroxide. Known additives can be used as appropriate.

[0015] The thickness of the first connecting member 2 is preferably 10 μm or more and 100 μm or less, more preferably 15 μm or more and 80 μm or less, and particularly preferably 20 μm or more and 50 μm or less. If the thickness is within this range, it is easy to design the first connecting member 2 while ensuring an appropriate creepage distance X.

[0016] In this embodiment, in addition to the above-described power semiconductor element 100, the following power semiconductor element can be used. As shown in Fig. 3, the power semiconductor element 100A used in this embodiment includes a power semiconductor chip 1, a first connecting member 2, a second connecting member 3, and a sealing resin layer 4. The power semiconductor chip 1 and the first connecting member 2 are as described above.

[0017] The second connection member 3 includes a third conductive portion 31 provided on the second surface 1b of the power semiconductor chip 1 so as to be electrically connected to the third electrode 14, and a second insulating layer 32 encasing the third conductive portion 31. Examples of materials for the third conductive portion 31 include those similar to those for the first conductive portion 21 and the second conductive portion 22. However, the material for the third conductive portion 31 may be the same as or different from those for the first conductive portion 21 or the second conductive portion 22. The second insulating layer 32 is a layer made of an insulating resin composition. The resin for the resin composition may be the same as that used for the first insulating layer 23. However, the material for the second insulating layer 32 may be the same as or different from that for the first insulating layer 23.

[0018] The thickness of the second connecting member 3 is preferably 3 μm or more and 100 μm or less, more preferably 5 μm or more and 80 μm or less, and particularly preferably 7 μm or more and 50 μm or less.

[0019] The encapsulating resin layer 4 is a layer made of an insulating resin composition that encapsulates at least the power semiconductor chip 1. The encapsulating resin layer 4 may encapsulate not only the power semiconductor chip 1 but also the first connecting member 2 and the second connecting member 3. Examples of resins used in the resin composition include polyimide, polyetherimide, polyamide, polyamideimide, polymethylpentene, polyester, polyetheretherketone, liquid crystal polymer, polyphenylene ether, polyphenylene sulfide, polyolefin, syndiotactic polystyrene, epoxy resin, maleimide resin, phenolic resin, and melamine resin. Among these, epoxy resin is preferred from the viewpoint of processability. The resin composition may also contain fillers and additives, similar to the first insulating layer 23 or the second insulating layer 32. However, the material of the encapsulating resin layer 4 may be the same as or different from the material of the first insulating layer 23 or the second insulating layer 32.

[0020] (Power Semiconductor Module) As shown in FIG. 4 , the power semiconductor module 200 according to this embodiment includes a first wiring substrate 5, a second wiring substrate 6, and the aforementioned power semiconductor element 100A disposed between the first wiring substrate 5 and the second wiring substrate 6 so as to connect the first wiring 52 and the second wiring 62 to each other. The power semiconductor element 100A is bonded to the first wiring 52 and the second wiring 62 by a bonding material 7. An insulating film 8 is provided on the first wiring 52 of the first wiring substrate 5. Note that the insulating film 8 may be provided on at least one of the first wiring 52 and the second wiring 62. In this embodiment, the distance S between the opposing first wiring 52 and the second wiring 62 is short, but the insulating film 8 can prevent dielectric breakdown. This distance S is preferably 100 μm or more and 2000 μm or less, more preferably 150 μm or more and 1000 μm or less, and particularly preferably 200 μm or more and 500 μm or less. If the spacing S is equal to or greater than the lower limit, other electronic components, depending on the type, can be mounted inside the power semiconductor module 200. If the spacing S is equal to or less than the upper limit, the power semiconductor module 200 can be made smaller.

[0021] In this embodiment, as shown in Fig. 4, the first wiring 52 preferably has a convex portion 521 in which a portion of the first wiring 52 is convex. The power semiconductor element 100A is preferably disposed on the convex portion 521. With this configuration, the distance S between the opposing first wiring 52 and second wiring 62 can be increased by the height H of the convex portion 521 of the first wiring 52. The height H of the convex portion 521 is preferably 10 µm or more and 300 µm or less, more preferably 20 µm or more and 200 µm or less, and particularly preferably 30 µm or more and 150 µm or less.

[0022] In the present embodiment, it is preferable that, in a plan view, the peripheral edge of the power semiconductor element 100A overlaps with the insulating film 8. With this configuration, the insulating film 8 is present between the peripheral edge of the power semiconductor element 100A and the first wiring 52, and dielectric breakdown between the peripheral edge of the power semiconductor element 100A and the first wiring 52 can be more reliably prevented.

[0023] The first wiring substrate 5 includes a first substrate 51 and first wiring 52. The second wiring substrate 6 includes a second substrate 61 and second wiring 62. Known substrates can be used for the first substrate 51 and the second substrate 61. Specific examples include ceramic substrates. Examples of materials for the first wiring 52 and the second wiring 62 include metals. Examples of metals include copper, aluminum, silver, and gold, as well as alloys containing these. Among these, copper or aluminum is preferred. The thickness of the first wiring 52 and the second wiring 62 is preferably 100 μm or more and 2000 μm or less, more preferably 150 μm or more and 1500 μm or less, and particularly preferably 200 μm or more and 1000 μm or less. The first wiring 52 and the second wiring 62 may have protrusions or recesses, as described below, or may have partially different thicknesses. Examples of the bonding material 7 include solder, sintered metal, and conductive adhesive.

[0024] The insulating film 8 is a film made of an insulating resin composition. This film may be a single-layer film or a multi-layer film. Examples of resins used in the resin composition include polyimide, polyetherimide, polyamide, polyamideimide, polymethylpentene, polyester, polyetheretherketone, liquid crystal polymer, polyphenylene ether, polyphenylene sulfide, polyolefin, syndiotactic polystyrene, epoxy resin, maleimide resin, phenolic resin, and melamine resin. Among these, polyimide or polyetherimide is preferred from the viewpoint of preventing dielectric breakdown. The insulating film 8 is preferably a multi-layer film. The dielectric breakdown strength of the resin constituting at least one layer is preferably 100 kV / mm or more, more preferably 150 kV / mm or more, and particularly preferably 200 kV / mm or more. For example, the multi-layer film may include an adhesive layer and a layer containing a resin whose dielectric breakdown strength is within the above range. This configuration allows the formation of an insulating film 8 that has excellent adhesiveness and also has a high dielectric breakdown prevention effect. The resin composition may contain fillers, additives, and the like, similar to the first insulating layer 23 or the second insulating layer 32. However, the material of the insulating film 8 may be the same as or different from that of the first insulating layer 23 or the second insulating layer 32.

[0025] The thickness of the insulating film 8 is preferably 10 μm or more and 300 μm or less, more preferably 15 μm or more and 200 μm or less, and particularly preferably 20 μm or more and 150 μm or less.

[0026] (Actions and Effects of First Embodiment) According to this embodiment, the following actions and effects can be achieved. (1) Although the distance S between the opposing first wirings 52 and second wirings 62 is shortened, the insulating film 8 can prevent dielectric breakdown. (2) The protrusions 521 of the first wirings 52 can increase the distance S between the opposing first wirings 52 and second wirings 62 by the height H of the protrusions 521. (3) The insulating film 8 present between the peripheral edge of the power semiconductor element 100A and the first wirings 52 can more reliably prevent dielectric breakdown between the peripheral edge of the power semiconductor element 100A and the first wirings 52.

[0027] Second Embodiment Next, a second embodiment of the present invention will be described with reference to the drawings. Note that a description of configurations similar to those of the first embodiment will be omitted. As shown in FIG. 5 , a power semiconductor module 200A according to this embodiment includes a first wiring substrate 5, a second wiring substrate 6, and a power semiconductor element 100A disposed between the first wiring substrate 5 and the second wiring substrate 6, such that the first wiring 52 and the second wiring 62 are connected to each other. The power semiconductor element 100A is bonded to the first wiring 52 and the second wiring 62 by a bonding material 7. Not only does the first wiring 52 have a protrusion 521, but the second wiring 62 also has a protrusion 621. Furthermore, an insulating film 8 is provided on both the first wiring 52 and the second wiring 62. By providing the insulating film 8 on both the first wiring 52 and the second wiring 62, dielectric breakdown between the first wiring 52 and the second wiring 62 can be more reliably prevented.

[0028] The power semiconductor module 200A further includes a passive component 9 on the first wiring 52. The second wiring 62 is provided with an insulating film 8. With this configuration, it is possible to more reliably prevent dielectric breakdown between the passive component 9 and the second wiring 62. Examples of the passive component 9 include a resistor, a capacitor, and an inductor.

[0029] 5 , the first wiring 52 preferably has a recess 522 in which a portion of the first wiring 52 is recessed. Furthermore, it is preferable that the passive component 9 is disposed in this recess 522. With this configuration, even a large passive component 9 can be mounted inside the power semiconductor module 200A. The depth D of the recess 522 is preferably 10 μm or more and 2000 μm or less, more preferably 20 μm or more and 1000 μm or less, and particularly preferably 30 μm or more and 500 μm or less.

[0030] (Effects of Second Embodiment) This embodiment can achieve the same effects as the effects (1) to (3) of the first embodiment, as well as the following effects (4) to (6). (4) By providing the insulating film 8 on both the first wiring 52 and the second wiring 62, it is possible to more reliably prevent dielectric breakdown between the first wiring 52 and the second wiring 62. (5) By providing the insulating film 8 between the passive component 9 and the second wiring 62, it is possible to more reliably prevent dielectric breakdown between the passive component 9 and the second wiring 62. (6) By providing the first wiring 52 with the recess 522, even a large passive component 9 can be mounted inside the power semiconductor module 200A.

[0031] Third Embodiment Next, a third embodiment of the present invention will be described with reference to the drawings. Description of components similar to those of the first embodiment will be omitted. As shown in FIG. 6 , a power semiconductor module 200B according to this embodiment includes a first wiring substrate 5, a second wiring substrate 6, and a power semiconductor element 100A disposed between the first wiring substrate 5 and the second wiring substrate 6, such that the first wiring 52 and the second wiring 62 are connected to each other. The power semiconductor element 100A is bonded to the first wiring 52 and the second wiring 62 by a bonding material 7. Because the first wiring 52 does not have a protrusion 521, the spacing S is shorter than the spacing S in the first embodiment. Furthermore, an insulating film 8 is provided on both the first wiring 52 and the second wiring 62. By providing the insulating film 8 on both the first wiring 52 and the second wiring 62, dielectric breakdown between the first wiring 52 and the second wiring 62 can be more reliably prevented.

[0032] (Function and Effect of Third Embodiment) According to this embodiment, it is possible to achieve the same function and effect as the function and effect (1) in the first embodiment, as well as the same function and effect as the function and effect (4) in the second embodiment.

[0033] Fourth Embodiment Next, a fourth embodiment of the present invention will be described with reference to the drawings. Note that a description of components similar to those of the first embodiment will be omitted. As shown in FIG. 7 , a power semiconductor module 200C according to this embodiment includes a first wiring substrate 5, a second wiring substrate 6, and a power semiconductor element 100 disposed between the first wiring substrate 5 and the second wiring substrate 6, connecting the first wiring 52 and the second wiring 62. The power semiconductor element 100 is bonded to the first wiring 52 and the second wiring 62 by a bonding material 7. Because the first wiring 52 does not have a protrusion 521, the spacing S is shorter than the spacing S in the first embodiment. Furthermore, an insulating film 8 is provided on both the first wiring 52 and the second wiring 62. By providing the insulating film 8 on both the first wiring 52 and the second wiring 62, dielectric breakdown between the first wiring 52 and the second wiring 62 can be more reliably prevented. Furthermore, in this embodiment, a power semiconductor element 100 is used instead of the power semiconductor element 100A used in the first embodiment. The power semiconductor element 100 has a step, and there is a portion where a part of the power semiconductor element 100 faces the second wiring 62. In plan view, the part of the power semiconductor element 100 overlaps with the insulating film 8. With this configuration, the insulating film 8 is present between the part of the power semiconductor element 100 and the second wiring 62, and dielectric breakdown between the part of the power semiconductor element 100 and the second wiring 62 can be more reliably prevented.

[0034] (Action and Effect of Fourth Embodiment) According to this embodiment, it is possible to achieve the same action and effect as the action and effect (1) in the first embodiment, the same action and effect as the action and effect (4) in the second embodiment, and the following action and effect (7): (7) The insulating film 8 present between a portion of the power semiconductor element 100 and the second wiring 62 can more reliably prevent dielectric breakdown between the portion of the power semiconductor element 100 and the second wiring 62.

[0035] [Modifications of the Embodiments] The present invention is not limited to the above-described embodiments, and modifications and improvements within the scope of achieving the object of the present invention are included in the present invention. For example, in the first embodiment, the number of power semiconductor elements 100A mounted on the power semiconductor module 200 is one, but this is not a limitation. The number of power semiconductor elements 100A may be two or more. Furthermore, in the second embodiment, the number of passive components 9 mounted on the power semiconductor module 200A is one, but this is not a limitation. The number of passive components 9 may be two or more. In the second embodiment, the insulating film 8 is provided over almost the entire surface of the second wiring 62, except for the area where the power semiconductor element 100A is located. However, this is not a limitation. A wiring pattern may be formed such that the second wiring 62 is absent in the portion facing the passive component 9 mounted on the power semiconductor module 200A. If the second wiring 62 is absent in such a portion, the problem of dielectric breakdown between the passive component 9 and the second wiring 62 will not occur even if the insulating film 8 is absent. Furthermore, the absence of the second wiring 62 allows the use of larger passive components 9.

[0036] DESCRIPTION OF SYMBOLS 1...Power semiconductor chip 11...First electrode 12...Second electrode 13...Semiconductor chip body 14...Third electrode 2...First connecting member 21...First conductive portion 22...Second conductive portion 23...First insulating layer 3...Second connecting member 31...Third conductive portion 32...Second insulating layer 4...Sealing resin layer 5...First wiring substrate 51...First base material 52...First wiring 521...Convex portion 522...Concave portion 6...Second wiring substrate 61...Second base material 62...Second wiring 621...Convex portion 7...Bonding material 8...Insulating film 9...Passive component 100, 100A...Power semiconductor element 200, 200A, 200B, 200C...Power semiconductor module

Claims

1. A power semiconductor module comprising: two wiring boards, each having a base material and wiring; and power semiconductor elements arranged between the two wiring boards to connect the wiring, wherein the power semiconductor elements comprise: a power semiconductor chip having a first electrode and a second electrode on a first surface and a third electrode on a second surface opposite the first surface; and a first connecting member comprising: a first conductive portion arranged on the first surface of the power semiconductor chip so as to be electrically connected to the first electrode, a second conductive portion arranged so as to be electrically connected to the second electrode and having a portion that protrudes outward from the outer peripheral edge of the power semiconductor chip in a planar view, and a first insulating layer that encases the first conductive portion and the second conductive portion, and wherein an insulating film is provided on at least one of the wiring of the two wiring boards.

2. A power semiconductor module according to claim 1, wherein the power semiconductor element further comprises: a second connecting member including a third conductive portion provided on the second surface of the power semiconductor chip so as to be electrically connected to the third electrode, and a second insulating layer enclosing the third conductive portion; and an encapsulating resin layer enclosing at least the power semiconductor chip.

3. A power semiconductor module according to claim 1 or 2, wherein at least one of the wirings of the two wiring substrates has a convex portion in which part of the wiring is convex, and the power semiconductor element is disposed on the convex portion.

4. The power semiconductor module according to claim 3, wherein, in plan view, the peripheral edge of the power semiconductor element and the insulating film overlap each other.

5. A power semiconductor module according to claim 1 or 2, further comprising a passive component on one of the wirings of the two wiring boards, and wherein the insulating film is provided on the other of the wirings of the two wiring boards.

6. A power semiconductor module according to claim 5, wherein one of the wirings of the two wiring substrates has a recess in which part of the wiring is recessed, and the passive component is disposed in the recess.

7. A power semiconductor module according to claim 1 or 2, wherein the insulating film is provided on both of the wirings of the two wiring substrates.

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