Resin composition, cured product, laminate, method for producing cured product, method for producing laminate, semiconductor device production method, and semiconductor device

Abstract

The present invention pertains to: a resin composition which contains a resin A and a photosensitizer B, and in which the resin A includes an amic acid ester structure and an amic acid structure, and further includes at least one structure selected from the group consisting of structures represented by formula (AY1) and structures represented by formula (DY1), the molar amount of the amic acid ester structure with respect to the total molar amount of the amic acid ester structure and the amic acid structure in the resin A is 90.00-99.90%, and the amine value of the resin A is 0.0010-0.3000 mmol / g; a cured product obtained by curing the resin composition; a laminate including the cured product; a method for producing the cured product; a method for producing the laminate; a semiconductor device production method including the method for producing the cured product; and a semiconductor device including the cured product.

Description

Resin composition, cured product, laminate, method for manufacturing cured product, method for manufacturing laminate, method for manufacturing semiconductor device, and semiconductor device

[0001] The present invention relates to a resin composition, a cured product, a laminate, a method for producing a cured product, a method for producing a laminate, a method for producing a semiconductor device, and a semiconductor device.

[0002] Nowadays, resin materials produced from resin compositions containing resins are being utilized in various fields. For example, cyclized resins such as polyimides are used in a variety of applications due to their excellent heat resistance and insulating properties. Examples of such applications include, but are not limited to, insulating films, sealing materials, or protective films for semiconductor devices used for packaging. They are also used as base films or coverlays for flexible substrates.

[0003] For example, in the above-mentioned applications, cyclized resins such as polyimides are used in the form of resin compositions containing the cyclized resin or its precursor. Such resin compositions are applied to a substrate, for example, by coating to form a photosensitive film, and then, as necessary, exposed to light, developed, heated, or the like, to form a cured product on the substrate. Because the resin compositions can be applied by known coating methods, for example, they have excellent manufacturing adaptability, such as a high degree of freedom in designing the shape, size, and application position of the applied resin composition. In addition to the high performance of cyclized resins such as polyimides, the industrial application of the above-mentioned resin compositions is increasingly expected to expand.

[0004] For example, Patent Document 1 describes a photosensitive resin composition containing a polyimide precursor having a weight-average molecular weight of 40,000 or more and a polymerizable unsaturated bond, a polymerizable monomer, a photopolymerization initiator, and a solvent.

[0005] Japanese Patent Application Laid-Open No. 2022-21936

[0006] In recent years, the redistribution layer (RDL) insulating film used in semiconductor packages has been required to have high dimensional uniformity in line width within the wafer surface due to the trend toward finer wiring. In other words, it is required that the difference in line width between the periphery and center of the wafer is small.

[0007] The present invention aims to provide a resin composition capable of forming a patterned cured layer with high line width uniformity within the wafer surface, a cured product obtained by curing the resin composition, a laminate including the cured product, a method for producing the cured product, a method for producing the laminate, a method for producing a semiconductor device including the method for producing the cured product, and a semiconductor device including the cured product.

[0008] Representative embodiments of the present invention are shown below: <1> A resin composition comprising a resin A and a photosensitizer B, wherein the resin A comprises an amic acid ester structure and an amic acid structure, and further comprises at least one structure selected from the group consisting of structures represented by formula (AY1) and structures represented by formula (DY1), the molar amount of the amic acid ester structure relative to the total molar amount of the amic acid structure and the amic acid ester structure in the resin A is 90.00 to 99.90%, and the amine value of the resin A is 0.0010 to 0.3000 mmol / g; In the formula, * represents a bonding site to another structure, X is a group represented by formula (2a), and in formula (2a), *1 to *4 each represent a bonding site to a carbonyl group, Y is any group selected from the following: <2> The resin composition according to <1>, which contains a nitrogen-containing heterocyclic compound. <3> The resin composition according to <1> or <2>, which contains a structure represented by formula (1): In formula (1), R １ and R ２ each independently represents a saturated aliphatic hydrocarbon group having 3 to 6 carbon atoms or a phenyl group which may be substituted with an alkyl group having 1 to 10 carbon atoms; X １ represents an oxygen atom or a sulfur atom, L １ is -C(=O)- or -S(=O) ２ represents - and * １ and *２ each independently represents a bonding site to another structure, R １ , R ２ , * １ and * ２ at least two of the structures bonded to the formula (1) may be bonded to form a ring structure, and the molar content of the structure represented by formula (1) relative to the total solid content of the resin composition is 0.005 to 0.5 mmol / g. <4> The resin composition according to any one of <1> to <3>, wherein resin A contains a structure represented by formula (1-dp-2d1); In the formula, * indicates a bonding site to another structure. <5> The resin composition according to <4>, wherein the resin A contains at least one selected from the structure represented by formula (1-dp-V1-1) and the structure represented by formula (Y-V1-1); In the formula, * indicates a bonding site with another structure. <6> The resin composition according to any one of <1> to <5>, wherein resin A contains an imide ring structure and the imidization rate of resin A is 3 to 40%. <7> The resin composition according to any one of <1> to <6>, wherein resin A has a weight average molecular weight of 15,000 to 40,000. <8> The resin composition according to any one of <1> to <7>, wherein the acid value of the acid group contained in resin A and having a neutralization point pH in the range of 7.0 to 12.0 is in the range of 0.0010 to 0.3000 mmol / g. <9> The resin composition according to any one of <1> to <8>, further comprising a titanium complex compound. <10> The resin composition according to any one of <1> to <9>, wherein photosensitizer B contains an oxime compound. <11> The resin composition according to any one of <1> to <10>, further comprising an antioxidant. <12> The resin composition according to any one of <1> to <11>, further comprising an aniline compound. <13> The resin composition according to any one of <1> to <12>, further comprising a urea compound. <14> The resin composition according to any one of <1> to <13>, used for forming an interlayer insulating film for a redistribution layer. <15> A cured product obtained by curing the resin composition according to any one of <1> to <14>. <16> A laminate comprising two or more layers made of the cured product according to <15>, and a metal layer between any two adjacent layers made of the cured products. <17> A method for producing a cured product, comprising a film-forming step of applying the resin composition according to any one of <1> to <14> onto a substrate to form a film. <18> A method for producing the cured product according to <17>, comprising an exposure step of selectively exposing the film to light and a development step of developing the film with a developer to form a pattern. <19> A method for producing the cured product according to <17> or <18>, comprising a heating step of heating the film at 50 to 450°C. <20> A method for producing a laminate, comprising the method for producing a cured product according to any one of <17> to <19>. <21> A method for producing a semiconductor device, comprising the method for producing a cured product according to any one of <17> to <19>. <22> A semiconductor device, comprising the cured product according to <15>.

[0009] According to the present invention, there are provided a resin composition capable of forming a patterned cured layer having high line width uniformity within the wafer surface, a cured product obtained by curing the resin composition, a laminate including the cured product, a method for producing the cured product, a method for producing the laminate, a method for producing a semiconductor device including the method for producing the cured product, and a semiconductor device including the cured product.

[0010] The following describes the main embodiments of the present invention. However, the present invention is not limited to the explicitly described embodiments. In this specification, a numerical range expressed using the symbol "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits, respectively. In this specification, the term "process" refers not only to an independent process but also to a process that cannot be clearly distinguished from other processes as long as the process achieves its intended effect. In the description of a group (atomic group), a notation that does not specify whether it is substituted or unsubstituted encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups). For example, the term "alkyl group" encompasses not only unsubstituted alkyl groups (unsubstituted alkyl groups) but also substituted alkyl groups (substituted alkyl groups). In this specification, unless otherwise specified, "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. In addition, examples of light used for exposure include actinic rays or radiation such as the bright line spectrum of a mercury lamp, far ultraviolet light typified by excimer lasers, extreme ultraviolet light (EUV light), X-rays, and electron beams. As used herein, "(meth)acrylate" refers to either or both of "acrylate" and "methacrylate," "(meth)acrylic" refers to either or both of "acrylic" and "methacrylic," and "(meth)acryloyl" refers to either or both of "acryloyl" and "methacryloyl." In the structural formulae herein, Me represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group. As used herein, the term "total solid content" refers to the total mass of all components of the composition excluding the solvent. Furthermore, as used herein, the term "solid content concentration" refers to the mass percentage of the components other than the solvent relative to the total mass of the composition. As used herein, the weight average molecular weight (Mw) and number average molecular weight (Mn) are values ​​measured using gel permeation chromatography (GPC) and are defined as polystyrene equivalent values, unless otherwise specified.In this specification, the weight-average molecular weight (Mw) and number-average molecular weight (Mn) can be determined, for example, by using an HLC-8220GPC (manufactured by Tosoh Corporation) and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series. Unless otherwise specified, these molecular weights are measured using NMP (N-methyl-2-pyrrolidone) as the eluent. However, when NMP is not suitable as the eluent, for example, due to low solubility, THF (tetrahydrofuran) can also be used. Furthermore, unless otherwise specified, detection in GPC measurement is assumed to be performed using a UV (ultraviolet) detector at a wavelength of 254 nm. In this specification, when the positional relationship of each layer constituting a laminate is described as "above" or "below," it is sufficient that another layer is above or below the reference layer among the multiple layers being considered. In other words, a third layer or element may be interposed between the reference layer and the other layer, and the reference layer and the other layer do not need to be in contact with each other. Unless otherwise specified, the direction in which layers are stacked on the substrate is referred to as "above." Alternatively, if a resin composition layer is present, the direction from the substrate to the resin composition layer is referred to as "above," and the opposite direction is referred to as "below." Note that such vertical directions are defined for convenience in this specification, and in actual embodiments, the "above" direction in this specification may differ from the vertically upward direction. In this specification, unless otherwise specified, the composition may contain two or more compounds corresponding to each component contained in the composition. Unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component. In this specification, unless otherwise specified, the temperature is 23° C., the atmospheric pressure is 101,325 Pa (1 atmosphere), and the relative humidity is 50% RH. In this specification, a combination of preferred embodiments is a more preferred embodiment.

[0011] (Resin Composition) The resin composition of the present invention is a resin composition containing a resin A and a photosensitizer B. The resin A contains an amic acid ester structure and an amic acid structure, and further contains at least one structure selected from the group consisting of structures represented by formula (AY1) and structures represented by formula (DY1), the molar amount of the amic acid ester structure relative to the total molar amount of the amic acid structure and the amic acid ester structure in the resin A is 90 to 99.9%, and the amine value of the resin A is 0.0010 to 0.3000 mmol / g.

[0012] The resin composition of the present invention is preferably used to form a photosensitive film subjected to exposure and development, and more preferably to form a film subjected to exposure and development using a developer containing an organic solvent. The resin composition of the present invention can be used, for example, to form an insulating film for a semiconductor device, an interlayer insulating film for a redistribution layer, a stress buffer film, etc., and is preferably used to form an interlayer insulating film for a redistribution layer. The resin composition of the present invention may be used to form a photosensitive film subjected to negative development or a photosensitive film subjected to positive development, but is preferably used to form a photosensitive film subjected to negative development. The resin composition of the present invention is preferably used to form a cured product in which at least a portion of the resin composition is in contact with a metal. Examples of metals include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals. Examples include copper and aluminum or alloys containing at least one of these, and copper or an alloy containing copper is preferred. In the present invention, negative development refers to development in which non-exposed areas are removed by development in the exposure and development, and positive development refers to development in which exposed areas are removed by development. As the exposure method, the developer, and the development method, for example, the exposure method described in the exposure step and the developer and development method described in the development step in the description of the method for producing a cured product described below can be used.

[0013] Using the resin composition of the present invention, a patterned cured layer with high linewidth uniformity within the wafer surface can be formed. The mechanism by which this effect is achieved is unclear, but is speculated as follows. It is presumed that improving linewidth uniformity within the wafer surface requires reducing the impact of environmental amines due to the exhaust equipment within the manufacturing equipment and minimizing the positional dependency of development. Environmental amines refer to ammonia and amines present in the clean room of the manufacturing equipment, as well as in the equipment and facilities located within the clean room. Specific examples of amines include methylamine, 2-amino-2-methyl-1-propanol, butylamine, monoethanolamine, and N-methylethanolamine. It is presumed that the resin composition of the present invention has a specific range of esterification rate and amine value, thereby providing a buffering effect against environmental amines and making the composition less susceptible to the influence of environmental amines. Furthermore, both the structure represented by formula (AY1) and the structure represented by formula (DY1) are small and hard, and having this structure as the resin skeleton facilitates molecular packing, suppressing the penetration of environmental amines and developer components into the film, thereby minimizing the influence of positional dependency within the wafer surface.

[0014] Here, Patent Document 1 neither describes nor suggests a resin composition containing a resin that includes at least one structure selected from the group consisting of a structure represented by formula (AY1) and a structure represented by formula (DY1), and that has an esterification rate of 90 to 99.9% and an amine value of 0.0010 to 0.3000 mmol / g.

[0015] The resin composition of the present invention will be described in detail below.

[0016] <Specific Resin: Resin A> Resin A contains an amic acid ester structure and an amic acid structure, and further contains at least one structure selected from the group consisting of a structure represented by formula (AY1) and a structure represented by formula (DY1). Furthermore, the molar amount of the amic acid ester structure relative to the total molar amount of the amic acid structure and the amic acid ester structure in Resin A is 90 to 99.9%. Furthermore, the amine value of Resin A is 0.0010 to 0.3000 mmol / g. Resin A (specific resin) in the resin composition of the present invention may consist of one type of resin or two or more types of resins. When Resin A (specific resin) consists of two or more types of resins, the esterification rate, amine value, imidization rate, acid value, proportion of unit structures, etc. are calculated or measured by treating the multiple resins as a single resin. The specific resin is preferably a polyimide precursor and may contain a polyimide. A polyimide precursor refers to a resin whose chemical structure changes upon external stimulation to become a polyimide. A resin whose chemical structure changes upon heating to become a polyimide is preferred, and a resin whose ring structure is formed by a ring closure reaction upon heating to become a polyimide is more preferred. In the present invention, polyimide refers to a resin having a repeating unit containing an imide group in the molecular chain, and preferably a resin having a repeating unit containing an imide ring structure in the molecular chain. Furthermore, when the polyimide is a linear resin, the polyimide is preferably a resin having a repeating unit containing an imide group in the main chain, and more preferably a resin having a repeating unit containing an imide ring structure in the main chain. In this specification, the term "main chain" refers to the relatively longest bonding chain in the resin molecule, and the term "side chain" refers to any other bonding chain. In this specification, the term "imide group" refers to a structure represented by *-C(=O)N(-*)C(=O)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, and more preferably a bonding site to a quaternary carbon atom. In this specification, the imide ring structure refers to a ring structure containing two carbon atoms and all of the nitrogen atoms in the imide as ring members. The imide ring structure is preferably a five-membered ring. The polyimide may be a so-called polyamideimide having an amide group in the molecular chain in addition to an imide group.In this specification, an amide group refers to a structure represented by *-C(=O)N(-#)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, and more preferably a bonding site to a quaternary carbon atom. Also, # represents a bonding site to another structure, preferably a bonding site to a hydrogen atom or a carbon atom, and more preferably a bonding site to a hydrogen atom. Both an amic acid ester structure and an amic acid structure are structures containing an amide group, as described below.

[0017] [Esterification rate] The ratio of the molar amount of the amic acid ester structure to the total molar amount of the amic acid structure and the amic acid ester structure in the specific resin (esterification rate) is 90.00 to 99.90%. The amic acid structure is, for example, A in the repeating unit represented by formula (1-b) described later. ２ Ga-O-, R ２ｂ is a hydrogen atom, and in the repeating unit represented by formula (1-c), ３ Ga-O-, R ３ｃ is a hydrogen atom, and in the repeating unit represented by formula (1-d), ４１ and A ４２ are all -O-, R ４１ and R ４２ are both hydrogen atoms. The amic acid ester structure is, for example, an amic acid structure in which A ２ Ga-O-, R ２ｂ is a monovalent organic group, and in the repeating unit represented by formula (1-c), A ３ Ga-O-, R ３ｃ is a monovalent organic group, and in the repeating unit represented by formula (1-d), A ４１ and A ４２ are all -O-, R ４１ and R ４２ are monovalent organic groups, two of which are present as an amic acid ester structure.

[0018] It is believed that the presence of side chain carboxylic acid groups in the resin in a range that results in the above-mentioned predetermined esterification rate and the amine value being within a specific range act as a buffer against environmental amines. The esterification rate is more preferably 92.00 to 99.50%, and even more preferably 95.00 to 99.00%. When the specific resin is made up of multiple types of resins, the esterification rate calculated by treating the multiple types of resins as one resin falls within the above range. The esterification rate of the resin １ The value is determined by H-NMR measurement. Specifically, it can be determined by the measurement method described in the examples below.

[0019] [Imidization ratio] The imidization ratio of the specific resin is preferably 3 to 40%. From the viewpoint of elongation at break, the imidization ratio is preferably 5% or more, more preferably 10% or more, and even more preferably 15% or more. From the viewpoint of resolution, the imidization ratio is preferably less than 40%, more preferably 35% or less, even more preferably 30% or less, and particularly preferably 25% or less.

[0020] In the present invention, the imidization rate is a value calculated by the following method. The resin is dissolved in γ-butyrolactone, diluted to a viscosity of 2,000 mPa·s, and applied to a silicon wafer by spin coating to form a resin layer. If a resin layer cannot be formed due to reasons such as low solubility of the resin in γ-butyrolactone, the solvent may be changed to another solvent. Examples of such solvents include solvents contained in the resin composition, such as NMP. The viscosity may also be adjusted as appropriate within an adjustable range. The silicon wafer to which the resulting resin layer is applied is dried on a hot plate at 110°C for 5 minutes to obtain a resin layer on the silicon wafer with a uniform thickness of approximately 15 μm after film formation. Here, if only a resin solution with a low viscosity is obtained and it is difficult to obtain a resin layer with a thickness of 15 μm, the film thickness may be adjusted as appropriate. For example, if the film thickness is 5 μm or greater, a similar imidization rate value can be obtained. The resin layer was measured by the ATR method using NicoletiS20 (manufactured by Thermofisher) in the measurement range of 4000 to 700 cm －１ , the measurement is performed 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) is set to 1500 cm －１ Around (1460-1550 cm －１The imidization index A of the resin is calculated by dividing the imidization index B by the peak height of the peak (the peak with the greatest intensity in the case of multiple peaks) in a nitrogen atmosphere at a heating rate of 10°C / min and heated at 350°C for 1 hour. The imidization index B is calculated in the same manner for a film obtained by heating at 350°C for 1 hour. The imidization index A is then divided by the imidization index B to calculate the imidization rate of the resin. In measuring the imidization rate, the resin whose imidization rate is to be measured can be obtained from the composition by, for example, the following method. A solution of 1 g of the composition and 2 g of tetrahydrofuran is added to 50 g of methanol or water to cause crystallization, and the resin is precipitated and filtered. The residue is recovered and dissolved in 3.0 g of THF (tetrahydrofuran), and this is added to 50 g of methanol or water to cause crystallization. The crystallization is then filtered and dried at 45°C for 20 hours to obtain a resin. When measuring the physical properties of a specific resin, such as the acid value and amine value, the resin can be obtained and measured by the same method. The imidization rate can be adjusted to 3 to 40% by appropriately changing the reaction conditions, such as the reaction temperature, during the production of the specific resin.

[0021] [Amine Value] The amine value of the specific resin is 0.0010 to 0.3000 mmol / g. It is believed that the specific range of amine value and the presence of side-chain carboxylic acid groups in the resin within the range that achieves the above-mentioned predetermined esterification rate provide a buffering effect against environmental amines. From the viewpoint of the storage stability of the composition, the amine value of the specific resin is more preferably 0.0100 to 0.2000 mmol / g, and even more preferably 0.0300 to 0.1000 mmol / g. The lower limit of the amine value is not particularly limited and may be 0.00 mmol / g. The amine value was measured by dissolving 0.62 g of the resin in 50 mL of diglyme and adding 10 mL of acetic acid to prepare a measurement solution. The solution was titrated with a 0.01 N (0.01 mol / L) perchloric acid solution in acetic acid to detect the neutralization point.

[0022] [Acid Value] The specific resin preferably has an acid value of the acid group at the neutralization point in the pH range of 7.0 to 12.0 in the range of 0.0010 to 0.3000 mmol / g, more preferably 0.0100 to 0.2000 mmol / g, and even more preferably 0.0300 to 0.1000 mmol / g. As long as the acid value of the specific resins contained in the resin composition of the present invention as a whole is in the range of 0.0010 to 0.3000 mmol / g, the acid value of each resin constituting the specific resin contained in the composition may be outside the range of 0.0010 to 0.3000 mmol / g. Specifically, two or more polymer precursors outside the range of 0.0010 to 0.3000 mmol / g may be blended to adjust the acid value of the specific resins contained in the composition as a whole to the range of 0.0010 to 0.3000 mmol / g. In the resin composition of the present invention, preferably 70% by mass or more, more preferably 80% by mass or more, and even more preferably 90% by mass or more of the resin contained in the composition has an acid value in the range of 0.0010 to 0.3000 mmol / g.

[0023] The acid groups contained in the specific resin whose neutralization point has a pH in the range of 7.0 to 12.0 refer to those whose pH is in the range of 7.0 to 12.0, as measured by the acid value measurement method described in the Examples below. Examples include carboxyl groups. The specific resin contained in the composition of the present invention may or may not contain acid groups other than those whose pH is in the range of 7.0 to 12.0. Of the acid groups contained in the specific resin contained in the composition of the present invention, preferably 70 mol% or more, more preferably 80 mol% or more, and even more preferably 90 mol% or more are acid groups whose pH is in the range of 7.0 to 12.0. The acid groups whose pH is in the range of 7.0 to 12.0 may be bonded to the side chain or the main chain of the specific resin. Preferably, at least one of the acid groups is bonded to the side chain of the specific resin. The neutralization point is measured using sodium hydroxide as a base. If it is difficult to measure the neutralization point using sodium hydroxide, a measurement using calcium hydroxide and converted to sodium hydroxide is also considered to be a measurement using sodium hydroxide.

[0024] The acid value in the above range can be achieved by appropriately adjusting the reaction conditions. In the present invention, it is preferable to produce the specific resin via a synthesis reaction solution having a water content of 50 to 700 ppm by mass. By adopting such a configuration, it is possible to more easily obtain a specific resin that satisfies the predetermined acid value.

[0025] [Polymerizable Group] The specific resin preferably has a polymerizable group, more preferably a radically polymerizable group. In the resin composition, it is preferable that at least the resin has a polymerizable group, and it is more preferable that the resin has a polymerizable group and a polymerizable compound is contained separately from the resin. The polymerizability of the specific resin is preferably a radically polymerizable group. When the specific resin has a radically polymerizable group, the resin composition of the present invention preferably contains a radical polymerization initiator, more preferably contains a radical polymerization initiator and a radical crosslinking agent. It may further contain a sensitizer, if necessary. From such a resin composition, for example, a negative-type photosensitive film is formed. Furthermore, the specific resin may have a polarity conversion group such as an acid-decomposable group. When the specific resin has an acid-decomposable group, it is preferable that the resin composition contains a photoacid generator. From such a resin composition, for example, a chemically amplified positive-type photosensitive film or a negative-type photosensitive film is formed.

[0026] [Examples of Resin Structure] The specific resin preferably has at least one repeating unit selected from the group consisting of repeating units represented by formula (1-b), repeating units represented by formula (1-c), and repeating units represented by formula (1-d), and may further have a repeating unit represented by formula (1-a). Among these, the specific resin preferably has at least a repeating unit represented by formula (1-d), and more preferably has a repeating unit represented by formula (1-d) and at least one repeating unit selected from the group consisting of repeating units represented by formula (1-a), repeating units represented by formula (1-b), and repeating units represented by formula (1-c). In formula (1-a), X ａ is a tetravalent organic group, and Y ａ is a divalent organic group. ２is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ２ｂ is a hydrogen atom or a monovalent organic group, and X ｂ is a tetravalent organic group, and Y ｂ is a divalent organic group. ３ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ３ｃ is a hydrogen atom or a monovalent organic group, and X ｃ is a tetravalent organic group, and Y ｃ is a divalent organic group. ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ｄ is a tetravalent organic group, and Y ｄ is a divalent organic group.

[0027] [X ａ ] In formula (1-a), X ａ The number of carbon atoms in X is preferably 4 or more, more preferably 4 to 50, and even more preferably 6 to 40. ａ is preferably any of the structures represented by the following formulas (2a) to (2e), or includes a structure in which two or more hydrogen atoms have been removed from a structure represented by the following formula (V-4). In formulas (2a) to (2e), L １ and L ２ are each independently a divalent group that is not conjugated with the benzene ring to which it is bonded, or a single bond, and *1 to *4 represent bonding sites with the carbonyl group shown in formula (1-a), formula (1-b), formula (1-c), or formula (1-d), respectively, and hydrogen atoms in these structures may be substituted with substituents. In formula (V-4), n1 represents an integer of 1 or more.

[0028] In formula (2c), L １and L ２ are each independently —CH ２ - or -O- is preferred.

[0029] The hydrogen atoms in formulas (2a) to (2e) may be substituted with a substituent, and examples of the substituent include an alkyl group, a halogenated alkyl group, etc., and are preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group is substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F.

[0030] In formula (V-4), n1 is preferably an integer of 1 to 5, more preferably 1 or 2, and even more preferably 1. ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), X ａ is preferably a group represented by the following formula (V-4-1): In the following formula, * represents X in formula (1-a). ａ represents the bonding sites with the four carbonyl groups to which n is bonded. The definition and preferred embodiments of n1 are as described above. The hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0031] In addition, in formula (1-a), X ａ It is also preferable that the compound represented by formula (V-1), (V-2), (V-3) or (V-5) below contains a structure in which two or more hydrogen atoms have been removed. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure.

[0032] In formula (V-2), R Ｘ１are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F. In formula (V-3), R Ｘ２ and R Ｘ３ are each preferably independently a hydrogen atom. Ｘ２ and R Ｘ３ When R Ｘ２ and R Ｘ３ The structure formed by bonding is a single bond, —O— or —C(R) ２ - is preferred, and -O- or -C(R) ２ R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group, or an aryl group, more preferably a hydrogen atom.

[0033] X ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), X ａ is preferably a group represented by the following formula (V-1-1): In the following formula, * represents X in formula (1-a). ａ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0034] X ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), X ａ is preferably a group represented by the following formula (V-2-1): In this specification, a bond crossing a side of a ring structure means that it substitutes one of the hydrogen atoms in the ring structure. In the following formula, * represents X in formula (1-a): ａ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ１The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0035] X ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), X ａ is preferably a group represented by the following formula (V-3-1) or formula (V-3-2), and from the viewpoint of reducing the dielectric constant of the cured product, is preferably a group represented by formula (V-3-2). In the following formulas, * represents X in formula (1-a). ａ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ２ and R Ｘ３ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0036] X ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-5), X ａ is preferably a group represented by the following formula (V-5-1): In the following formula, * represents X in formula (1-a). ａ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0037] Other, X ａ may be a tetracarboxylic acid residue remaining after removal of the anhydride group from a tetracarboxylic acid dianhydride described in paragraphs 0055 to 0057 of JP-A No. 2023-003421.

[0038] Also, X ａ It is preferable that X does not contain an imide bond in the structure. ａ In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎrepresents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom. Ｎ —C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ R each independently represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ The preferred embodiments of X are as described above. ａ It is preferable that X does not contain an ester bond in its structure. In the present invention, the ester bond is a bond represented by *--O--C(=O)--*. Among these, X ａ It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0039] [Y ａ ] In formula (1-a), Y ａ The number of carbon atoms in Y is preferably 4 or more, more preferably 4 to 50, and even more preferably 4 to 40. ａ may be a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by any one of the following formulas (V-1) to (V-10): By using a group containing a structure obtained by removing two or more hydrogen atoms from a structure represented by any one of formulas (V-1) to (V-10), the chemical resistance and flatness of the cured product are improved. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may bond to form a ring structure. Ｘ５ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group.

[0040] In formula (V-2), R Ｘ１ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F. In formula (V-3), R Ｘ２ and R Ｘ３ are each preferably independently a hydrogen atom. Ｘ２ and R Ｘ３ When R Ｘ２ and R Ｘ３ The structure formed by bonding is a single bond, —O— or —C(R) ２ - is preferred, and -O- or -C(R) ２ R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group, or an aryl group, more preferably a hydrogen atom. Ｘ５ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. As the halogen atom, F or Cl is preferred, and F is more preferred.

[0041] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), Y ａ is preferably a group represented by the following formula (V-1-2): ａ represents the bonding site to the two nitrogen atoms to which n is bonded, and n1 represents an integer of 0 to 5. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0042] Yａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), ａ is preferably a group represented by the following formula (V-2-3) or formula (V-2-4), and from the viewpoint of reducing the dielectric constant of the cured product, it is preferably a group represented by formula (V-2-4). Ｘ１ represents a single bond or —O—, and * represents Y in formula (1-a). ａ represents the bonding site with the two nitrogen atoms to which R is bonded. Ｘ１ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0043] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), ａ is preferably a group represented by the following formula (V-3-3) or formula (V-3-4), and from the viewpoint of reducing the dielectric constant of the cured product, it is preferably a group represented by formula (V-3-3). In the following formulas, * represents Y in formula (1-a). ａ represents the bonding site with the two nitrogen atoms to which R is bonded. Ｘ２ and R Ｘ３ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0044] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), ａ is preferably a group represented by the following formula (V-4-2) or (V-4-3): ａ represents the bonding site to the two nitrogen atoms to which n is bonded, and n1 represents an integer of 0 to 5. An embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups. Examples of known substituents include alkyl groups, halogenated alkyl groups, and halogen atoms.

[0045] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-5), ａ is preferably a group represented by the following formula (V-5-2): ａ represents the bonding site with the two nitrogen atoms to which the two are bonded. Furthermore, the hydrogen atoms in formula (V-5-2) may be further substituted with a known substituent such as a hydrocarbon group. Examples of known substituents include an alkyl group, a halogenated alkyl group, and a halogen atom. However, it is also preferable that none of the hydrogen atoms in the group represented by formula (V-5-2) is substituted.

[0046] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-6), ａ is preferably a group represented by the following formula (V-6-2): ａ represents the bonding site with the two nitrogen atoms to which the carbon atoms are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0047] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-7), ａ is preferably a group represented by the following formula (V-7-2): ａ represents the bonding site with the two nitrogen atoms to which the carbon atoms are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0048] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-8), ａ is preferably a group represented by the following formula (V-8-2): ａ represents the bonding site with the two nitrogen atoms to which R is bonded.Ｘ５ The definition and preferred embodiments of are as described above. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0049] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-9), ａ is preferably a group represented by the following formula (V-9-2): ａ represents the bonding site with the two nitrogen atoms to which the carbon atoms are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0050] Y ａ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-10), ａ is preferably a group represented by the following formula (V-10-2): ａ represents the bonding site with the two nitrogen atoms to which the carbon atoms are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0051] Others, Y ａ may be a group described in paragraphs 0042 to 0053 of JP-A No. 2023-003421. ａ It is preferable that Y does not contain an imide structure in the structure. ａ It is preferable that Y does not contain a urethane bond, a urea bond, or an amide bond in the structure. ａ It is preferable that Y does not contain an ester bond in the structure. ａ It is preferable that the copolymer does not contain an imide structure, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide structure, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0052] [X ｂ , Y ｂ X in formula (1-b) ｂ and Yｂ A preferred embodiment of the formula (1-a) is X ａ and Y ａ However, the preferred embodiments of X are the same as those of ａ and Y ａ In the explanation of the formula (1-a), the expression "formula (1-a)" should be read as "formula (1-b)."

[0053] [A ２ A in formula (1-b) ２ is —O— or —NR ｚ -, and -O- is preferred. ｚ represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom.

[0054] [R ２ｂ R in formula (1-b) ２ｂ represents a hydrogen atom or a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. ２ｂ It is preferable that the specific resin contains a polymerizable group. The polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, or the like, and a radically polymerizable group is preferable. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. The radically polymerizable group contained in the specific resin is preferably a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), and a group represented by the following formula (III) is preferable.

[0055]

[0056] In formula (III), R ２００represents a hydrogen atom, a methyl group, an ethyl group, or a methylol group, and is preferably a hydrogen atom or a methyl group. In formula (III), * represents a bonding site with another structure. In formula (III), R ２０１ represents an alkylene group having 2 to 12 carbon atoms, —CH ２ CH(OH)CH ２ -, a cycloalkylene group or a polyalkyleneoxy group. ２０１ Examples of the alkylene group include an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, an octamethylene group, and a dodecamethylene group; a 1,2-butanediyl group, a 1,3-butanediyl group; a —CH ２ CH(OH)CH ２ alkylene groups such as ethylene and propylene groups; ２ CH(OH)CH ２More preferred are alkylene groups such as ethylene and propylene, or polyalkyleneoxy groups. In the present invention, a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different. When a polyalkyleneoxy group contains multiple alkyleneoxy groups with different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, a block arrangement, or an arrangement having an alternating pattern. The number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent if the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, even more preferably 2 to 6, even more preferably 2 to 5, even more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2. The alkylene group may also have a substituent. Preferred substituents include alkyl groups, aryl groups, and halogen atoms. The number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6. From the viewpoint of solvent solubility and solvent resistance, the polyalkyleneoxy group is preferably a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, more preferably a polyethyleneoxy group or a polypropyleneoxy group, and even more preferably a polyethyleneoxy group. In the group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, the ethyleneoxy groups and propyleneoxy groups may be arranged randomly, in blocks, or in an alternating pattern. The preferred embodiments of the number of repeating ethyleneoxy groups and the like in these groups are as described above.

[0057] In formula (1-b), R ２ｂis a hydrogen atom, the specific resin may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

[0058] In formula (1-b), R ２ｂ However, it may also be a polarity conversion group such as an acid-decomposable group. The acid-decomposable group is not particularly limited as long as it is decomposed by the action of an acid to generate an alkali-soluble group such as a phenolic hydroxy group or a carboxy group. However, an acetal group, a ketal group, a silyl group, a silyl ether group, a tertiary alkyl ester group, etc. are preferred, and from the viewpoint of exposure sensitivity, an acetal group or a ketal group is more preferred. Specific examples of the acid-decomposable group include a tert-butoxycarbonyl group, an isopropoxycarbonyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, an ethoxyethyl group, a methoxyethyl group, an ethoxymethyl group, a trimethylsilyl group, a tert-butoxycarbonylmethyl group, a trimethylsilyl ether group, etc. From the viewpoint of exposure sensitivity, an ethoxyethyl group or a tetrahydrofuranyl group is preferred.

[0059] [X ｃ , Y ｃ , A ３ , R ３ｃ X in formula (1-c) ｃ and Y ｃ A preferred embodiment of the formula (1-a) is X ａ and Y ａ However, the preferred embodiments of X are the same as those of ａ and Y ａ In the explanation of the formula (1-a), the description of "formula (1-a)" should be read as "formula (1-c)". ３ and R ３ｃ A preferred embodiment of the formula (1-b) is ２ and R ２ｂ However, the same as the preferred embodiment of A ２ and R ２ｂ In the explanation of the formula (1-b), the expression "formula (1-b)" should be read as "formula (1-c)."

[0060] [Xｄ , Y ｄ , A ４１ , A ４２ , R ４１ , R ４２ X in formula (1-d) ｄ and Y ｄ A preferred embodiment of the formula (1-a) is X ａ and Y ａ However, the preferred embodiments of X are the same as those of ａ and Y ａ In the explanation of the formula (1-a), the description of "formula (1-a)" should be read as "formula (1-d)". ４１ and A ４２ A preferred embodiment of each of the above is A in formula (1-b). ２ However, the same as the preferred embodiment of A ２ In the explanation of the formula (1-b), the description of "formula (1-b)" should be read as "formula (1-d)". ４１ and R ４２ Preferred embodiments of the above are R in formula (1-b), ２ｂ However, the preferred embodiments are the same as those of the above. ２ｂ In the explanation of the formula (1-b), the expression "formula (1-b)" should be read as "formula (1-d)."

[0061] Here, in all of the repeating units represented by formula (1-b), the repeating units represented by formula (1-c), and the repeating units represented by formula (1-d) contained in the specific resin, R ２ｂ and R ３ｃ , R ４１ and R ４２ R relative to the total molar amount of ２ｂ and R ３ｃ , R ４１ and R ４２ The content of monovalent organic groups is preferably 50.0 to 100%, more preferably 85.0 to 100%, and even more preferably 92.0 to 100%.

[0062] The specific resin preferably contains at least one repeating unit selected from the group consisting of the following repeating units A-1, A-2, A-3, and A-4: Repeating unit A-1: ​​A repeating unit represented by the above formula (1-a), wherein X ａ is any one of the structures represented by formula (2a) to formula (2e), or a repeating unit containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4). Repeating unit A-2: A repeating unit represented by formula (1-b) above, wherein X ｂ is any one of the structures represented by formula (2a) to formula (2e), or a repeating unit containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4). Repeating unit A-3: A repeating unit represented by formula (1-c), in which X ｃ is any one of the structures represented by formula (2a) to formula (2e), or a repeating unit containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4). Repeating unit A-4: A repeating unit represented by formula (1-d) above, wherein X ｄ a repeating unit having any of the structures represented by formula (2a) to formula (2e), or a repeating unit containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4). Among these, the specific resin preferably contains the repeating unit A-4, and more preferably contains the repeating unit A-4 and at least one repeating unit selected from the group consisting of the repeating unit A-1, the repeating unit A-2, and the repeating unit A-3.

[0063] The specific resin preferably contains at least one repeating unit selected from the group consisting of the following repeating units B-1, B-2, B-3, and B-4. In particular, the specific resin preferably contains at least one repeating unit selected from the group consisting of the repeating unit A-1, A-2, A-3, and A-4, and at least one repeating unit selected from the group consisting of the following repeating units B-1, B-2, B-3, and B-4. Of these, the specific resin preferably contains the repeating unit A-4 and the repeating unit B-4. Repeating unit B-1: A repeating unit represented by the above formula (1-a), wherein X ａ Repeating unit B-2: a repeating unit represented by the above formula (1-b), wherein X ｂ Repeating unit B-3: a repeating unit represented by the above formula (1-c), wherein X ｃ Repeating unit B-4: a repeating unit represented by the above formula (1-d), wherein X ｄ a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1), (V-2), (V-3) and (V-5):

[0064] The specific resin is a repeating unit represented by the above formula (1-b), R ２ｂ a repeating unit represented by the above formula (1-c), wherein R ３ｃ is a monovalent organic group having an ethylenically unsaturated bond, and a repeating unit represented by the above formula (1-d), wherein R ４１ and R ４２and R ４１ and R ４２ It is more preferable that at least one of the repeating units contains a monovalent organic group having an ethylenically unsaturated bond.

[0065] The specific resin is a repeating unit represented by the above formula (1-a), ａ a repeating unit having a structure represented by formula (C-1) to formula (C-3), a repeating unit having a structure represented by formula (1-b), ｂ a repeating unit having a structure represented by the following formula (C-1) to formula (C-3), a repeating unit having a structure represented by the above formula (1-c), ｃ a repeating unit having a structure containing a structure represented by formula (C-1) to formula (C-3), and a repeating unit having the structure represented by formula (1-d), wherein Y ｄ It is preferable that the repeating unit represented by formula (1-a) contains at least one repeating unit selected from the group consisting of repeating units having a structure containing a structure represented by formula (C-1) to formula (C-3). ａ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-3) is preferably a repeating unit corresponding to the repeating unit A-1 or repeating unit B-1 described above. ｂ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-3) is preferably a repeating unit corresponding to the repeating unit A-2 or repeating unit B-2 described above. ｃ The repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-3) is preferably a repeating unit corresponding to the repeating unit A-3 or repeating unit B-3 described above. ｄThe repeating unit having a structure containing the structure represented by formula (C-1) to formula (C-3) is preferably a repeating unit corresponding to the repeating unit A-4 or repeating unit B-4 described above.

[0066] In one embodiment of the specific resin of the present invention, the total content of repeating units represented by formula (1-a), formula (1-b), formula (1-c), or formula (1-d) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units represented by formula (1-a), formula (1-b), formula (1-c), or formula (1-d).

[0067] In another embodiment of the specific resin of the present invention, the total content of repeating units represented by formula (1-d) is 50 mol% or more of all repeating units. The total content is more preferably 60 mol% or more, even more preferably 70 mol% or more, and particularly preferably 80 mol% or more. The upper limit of the total content is preferably 97 mol% or less, more preferably 95 mol% or less, even more preferably 90 mol% or less, and particularly preferably 85 mol% or less.

[0068] Furthermore, in the specific resin of the present invention, the total content of repeating units corresponding to repeating unit A-1, repeating unit A-2, repeating unit A-3, or repeating unit A-4 (also referred to as "repeating unit A") is preferably 20 mol% or more of all repeating units. The total content is more preferably 30 mol% or more, even more preferably 40 mol% or more, and particularly preferably 50 mol% or more. There is no particular upper limit to the total content, and all repeating units in the specific resin except for the terminal repeating units may be repeating units A.

[0069] Furthermore, in the specific resin of the present invention, the total content of repeating units corresponding to repeating unit B-1, repeating unit B-2, repeating unit B-3, or repeating unit B-4 (also referred to as "repeating unit B") is preferably 0 to 80 mol % of all repeating units, more preferably 5 to 70 mol %, even more preferably 10 to 60 mol %, and particularly preferably 15 to 50 mol %.

[0070] In addition, the total content of repeating units A and B in the specific resin of the present invention is preferably 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units A or B.

[0071] In one embodiment of the present invention, the specific resin particularly preferably contains a structure represented by formula (1-dp-2d1) from the viewpoint of resin orientation and easy availability of raw materials. In the formula, * indicates a bonding site with other structures. The structure represented by formula (1-dp-2d1) is a partial structure of the repeating unit represented by formula (1-d), and X ｄ is a structure represented by formula (2d), and A ４１ and A ４２ are both —O—, and R ４１ and R ４２ When the specific resin contains a structure represented by formula (1-dp-2d1), the repeating units containing the structure represented by formula (1-dp-2d1) preferably account for 10 mol % or more of all repeating units, more preferably 20 mol % or more, and even more preferably 30 mol % or more, and preferably 90 mol % or less, more preferably 85 mol % or less, and even more preferably 80 mol % or less.

[0072] When the specific resin includes a structure represented by formula (1-dp-2d1), it is preferable that the specific resin further includes at least one selected from a structure represented by formula (1-dp-V1-1) and a structure represented by formula (Y-V1-1).

[0073] In the formula, * indicates a bonding site with other structures. The structure represented by formula (1-dp-V1-1) is a partial structure of the repeating unit represented by formula (1-d), and X ｄ is a structure obtained by removing four hydrogen atoms from the structure represented by formula (V-1), and A ４１ and A ４２ are both —O—, and R ４１ and R ４２ corresponds to a structure in which all of these are methacryloyloxyethyl groups.

[0074] The structure represented by formula (Y-V1-1) can be obtained by, for example, Y in the repeating unit represented by formula (1-b). ｂ is a structure obtained by removing two hydrogen atoms from the structure represented by formula (V-1), and Y in the repeating unit represented by formula (1-d) ｄ is a structure obtained by removing two hydrogen atoms from a structure represented by formula (V-1). The structure represented by formula (Y-V1-1) may constitute a repeating unit represented by formula (1-d) together with the structure represented by formula (1-dp-2d1). When the specific resin contains a structure represented by formula (1-dp-V1-1) or a structure represented by formula (Y-V1-1), it is preferable that the repeating units containing either of these structures account for 10 mol% or more of all repeating units, more preferably 20 mol% or more, and even more preferably 30 mol% or more, preferably 90 mol% or less, more preferably 85 mol% or less, and even more preferably 80 mol% or less.

[0075] [Structure Represented by Formula (AY1) and Structure Represented by Formula (DY1)] The specific resin contains at least one structure selected from the group consisting of a structure represented by Formula (AY1) and a structure represented by Formula (DY1). This structure forms a small and hard resin skeleton structure, which facilitates molecular packing. Therefore, when the resin composition of the present invention is used in semiconductor manufacturing, penetration of environmental amines and developer components into the film is suppressed, and the influence of position dependency within the wafer surface can be reduced. In formula (AY1), * represents a bonding site to another structure, and X is a group represented by formula (2a). In formula (2a), *1 to *4 each represent a bonding site to a carbonyl group, and the bonding site is not limited.

[0076] In formula (DY1), Y is any group selected from the following: * indicates the bonding site to nitrogen.

[0077] The structure represented by formula (AY1) is a partial structure of the repeating unit represented by formula (1-d), and X ｄ is a group represented by formula (2a), and A ４１ and A ４２ are both —O—, and R ４１ and R ４２ are methacryloyloxyethyl groups. The specific resin preferably contains repeating units including a structure selected from the group consisting of a structure represented by formula (AY1) and a structure represented by formula (DY1) in an amount of 20 mol % or more, more preferably 30 mol % or more, and even more preferably 50 mol % or more, preferably 90 mol % or less, more preferably 85 mol % or less, and even more preferably 80 mol % or less of all repeating units.

[0078] [Specific structure in resin] The specific resin preferably contains a structure represented by formula (1) (specific structure). A preferred embodiment of the structure represented by formula (1) will be described later. When the specific resin contains a structure represented by formula (1), the specific resin may have the structure represented by formula (1) in its main chain, but preferably has it in its side chain. In this specification, the term "main chain" refers to the relatively longest bond chain in the molecule of the polymer compound constituting the resin, and the term "side chain" refers to any other bond chain. Examples of the structure of the specific resin containing the structure represented by formula (1) include structures that satisfy at least one of the following: (* indicates X ｂ , X ｃ , or X ｄ *-C(=O)-A in the repeating unit represented by formula (1-b) ２ -R ２ｂ is replaced with a group containing the structure represented by formula (1). *-C(=O)-A in the repeating unit represented by formula (1-c) ３ -R ３ｃ is replaced with a group containing the structure represented by formula (1). *-C(=O)-A in the repeating unit represented by formula (1-d) ４１ -R ４１ , *-C(=O)-A ４２ -R ４２ The specific resin contains a repeating unit in which one or more of the following repeating units are replaced with a group containing a structure represented by formula (1): The specific resin contains a structure having a structure represented by formula (1) in the imide ring at the terminal thereof, as shown in the following formula: In the formula, R １３２ represents a tetravalent organic group, R Ｘ１ and R Ｘ２ each independently represents a group containing a structure represented by formula (1) or an organic group, and R Ｘ１ and R Ｘ２at least one of which is a group containing a structure represented by formula (1-1). Preferred examples of the "group containing a structure represented by formula (1)" include a group represented by formula (X-1) described below. The resin composition may contain a specific resin containing a structure represented by formula (1) and a specific resin not containing a structure represented by formula (1). The content of the structure represented by formula (1) in the specific resin is, for example, preferably 0.01 to 1.0 mmol / g, and more preferably 0.01 to 0.85 mmol / g.

[0079] [Molecular Weight] The weight-average molecular weight (Mw) of the specific resin is preferably 120,000 or less, more preferably 50,000 or less, and even more preferably 40,000 or less. Furthermore, the Mw is preferably 5,000 or more, more preferably 10,000 or more, and even more preferably 15,000 or more. The weight-average molecular weight (Mw) of the specific resin is particularly preferably 15,000 to 40,000. The number-average molecular weight (Mn) of the specific resin is preferably 40,000 or less, more preferably 30,000 or less, and even more preferably 20,000 or less. Furthermore, the Mn is preferably 2,000 or more, more preferably 3,000 or more, and even more preferably 4,000 or more. The molecular weight dispersity of the specific resin is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the specific resin is not particularly specified, but is preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. In this specification, the molecular weight dispersity is a value calculated by weight average molecular weight / number average molecular weight. When the resin composition contains multiple types of resins as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one resin are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple types of resins as one resin are each within the above ranges.

[0080] [Method for producing specific resin] The specific resin is obtained by reacting a dicarboxylic acid or a dicarboxylic acid derivative with a diamine. Preferably, the specific resin is obtained by halogenating the dicarboxylic acid or a dicarboxylic acid derivative with a halogenating agent such as thionyl chloride, and then reacting the halogenated dicarboxylic acid or the dicarboxylic acid derivative with a diamine.

[0081] It is also preferable to synthesize the compound using a non-halogen catalyst without using the halogenating agent. The non-halogen catalyst may be any known amidation catalyst that does not contain a halogen atom, and examples thereof include boroxine compounds, N-hydroxy compounds, tertiary amines, phosphate esters, amine salts, urea compounds, and carbodiimide compounds. Examples of the carbodiimide compound include N,N'-diisopropylcarbodiimide, N,N'-dicyclohexylcarbodiimide, and (2,6-diisopropylphenyl)carbodiimide.

[0082] In the method for producing the specific resin, it is preferable to use an organic solvent during the reaction. One or more organic solvents may be used. The organic solvent can be appropriately selected depending on the raw materials, and examples thereof include pyridine, diethylene glycol dimethyl ether (diglyme), N-methylpyrrolidone, and N-ethylpyrrolidone.

[0083] -End-capping agent- In the method for producing the specific resin, in order to further improve storage stability, it is preferable to cap the ends of the polyimide precursor or the like with an end-capping agent such as an acid anhydride, a monocarboxylic acid, a monoacid chloride compound, a monoactive ester compound, etc. As the end-capping agent, it is more preferable to use a monoamine, and preferred monoamine compounds include aniline, 2-ethynylaniline, 3-ethynylaniline, 4-ethynylaniline, 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-8-aminonaphthalene, 1-carboxy-9-aminonaphthalene, 1-carboxy-10-aminonaphthalene, 1-carboxy-11-aminonaphthalene, 1-carboxy-12-aminonaphthalene, 1-carboxy-13-aminonaphthalene, 1-carboxy-14-aminonaphthalene, 1-carboxy-15-aminonaphthalene, 1-carboxy-16-aminonaphthalene, 1-carboxy-17-aminonaphthalene, 1-carboxy-18-aminonaphthalene, 1-carboxy-19 ... Examples include 5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, and 4-aminothiophenol. Two or more of these may be used, and multiple different terminal groups may be introduced by reacting multiple terminal-capping agents.

[0084] -Solid Precipitation- The production of the specific resin may include a step of precipitating a solid. Specifically, the polyimide precursor or the like in the reaction solution is precipitated in water, and then dissolved in a solvent in which the specific resin is soluble, such as tetrahydrofuran, to precipitate a solid. The specific resin is then dried to obtain a powder of the specific resin or the like.

[0085] -Introduction of a structure represented by formula (1)- When the specific resin contains a structure represented by formula (1), the specific resin is synthesized, for example, by the method described in (1) or (2) below. (1) In the method for producing the specific resin, a carbodiimide compound is used as a non-halogen catalyst, and the reaction time, reaction temperature, and timing of adding the carbodiimide compound are appropriately adjusted. (2) The polyimide precursor obtained by the method for producing the specific resin is reacted with a carbodiimide compound in a solvent. Specific examples of these methods include, but are not limited to, the methods described in the synthesis examples below.

[0086] [Content] The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the resin composition. Also, the content of the specific resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the resin composition.

[0087] <Other Resins> The resin composition of the present invention may contain the above-described specific resin and another resin (hereinafter simply referred to as "other resin") different from the specific resin. Examples of other resins include polybenzoxazole precursors, polybenzoxazoles, polyamides not falling under the category of polyimide precursors, phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. For example, by further adding a (meth)acrylic resin, a resin composition with excellent coatability can be obtained, and a pattern (cured product) with excellent solvent resistance can be obtained. For example, instead of or in addition to the polymerizable compound described below, a resin having a high polymerizable group value and a weight average molecular weight of 20,000 or less (for example, a polymerizable group content of 1×10 per 1 g of resin) can be used. －３By adding a (meth)acrylic resin (having a molecular weight of 1000 to 1000 mol / g or more) to the resin composition, it is possible to improve the coatability of the resin composition and the solvent resistance of the pattern (cured product).

[0088] When the resin composition of the present invention contains other resins, the content of the other resins is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, based on the total solid content of the resin composition. When the resin composition of the present invention contains other resins, the content of the other resins is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, even more preferably 60% by mass or less, and even more preferably 50% by mass or less, based on the total solid content of the resin composition. A preferred embodiment of the resin composition of the present invention may also be an embodiment in which the content of the other resin is low. In the above embodiment, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the resin composition. The lower limit of the content is not particularly limited, as long as it is 0% by mass or more. The resin composition of the present invention may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably in the above range.

[0089] <Photosensitizer> The resin composition contains a photosensitizer (photosensitizer B). Examples of the photosensitizer include a photopolymerization initiator and a photoacid generator, and a photopolymerization initiator is preferred.

[0090] [Photopolymerization initiator] The resin composition of the present invention preferably contains a photopolymerization initiator. The photopolymerization initiator is preferably a photoradical polymerization initiator. There are no particular limitations on the photoradical polymerization initiator, and it can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator that is photosensitive to light in the ultraviolet to visible region is preferred. Alternatively, it may be an activator that reacts with a photoexcited sensitizer to generate active radicals.

[0091] The photoradical polymerization initiator has a capacity of at least about 50 L·mol within a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). －１ ・cm －１ The molar absorption coefficient of the compound can be measured using a known method. For example, it is preferable to measure the molar absorption coefficient using an ultraviolet-visible spectrophotometer (Varian Cary-5 spectrophotometer) at a concentration of 0.01 g / L using ethyl acetate as a solvent.

[0092] Any known compound can be used as the photoradical polymerization initiator. Examples include halogenated hydrocarbon derivatives (e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, α-aminoketone compounds such as aminoacetophenone, α-hydroxyketone compounds such as hydroxyacetophenone, azo compounds, azide compounds, metallocene compounds, organic boron compounds, and iron arene complexes. For details of these compounds, please refer to paragraphs

[0165] to

[0182] of JP 2016-027357 A and paragraphs

[0138] to

[0151] of WO 2015 / 199219 A, the contents of which are incorporated herein by reference. Further, paragraphs 0065 to 0111 of JP 2014-130173 A, compounds described in Japanese Patent No. 6301489, MATERIAL STAGE 37 to 60p, vol. 19, No. 3,2019 described peroxide-based photopolymerization initiators, photopolymerization initiators described in WO 2018 / 221177, photopolymerization initiators described in WO 2018 / 110179, photopolymerization initiators described in JP 2019-043864 A, photopolymerization initiators described in JP 2019-044030 A, peroxide-based initiators described in JP 2019-167313 A can be mentioned, the contents of which are incorporated herein by reference.

[0093] Examples of ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference. As a commercially available product, Kayacure-DETX-S (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

[0094] In one embodiment of the present invention, a hydroxyacetophenone compound, an aminoacetophenone compound, or an acylphosphine compound can be suitably used as the photoradical polymerization initiator. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 or an acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.

[0095] Examples of α-hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, and Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).

[0096] Examples of α-aminoketone initiators that can be used include Omnirad 907, Omnirad 369, Omnirad 369E, and Omnirad 379EG (all manufactured by IGM Resins B.V.), and IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF).

[0097] As the aminoacetophenone initiator, acylphosphine oxide initiator, and metallocene compound, for example, compounds described in paragraphs 0161 to 0163 of WO 2021 / 112189 can also be suitably used. The contents of this specification are incorporated herein by reference.

[0098] As the photoradical polymerization initiator, an oxime compound is more preferably used. By using an oxime compound, it is possible to more effectively improve the exposure latitude. An oxime compound is particularly preferred because it has a wide exposure latitude (exposure margin) and also functions as a photocuring accelerator.

[0099] Specific examples of the oxime compound include compounds described in JP-A-2001-233842, compounds described in JP-A-2000-080068, compounds described in JP-A-2006-342166, compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), compounds described in J. C. S. Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.202-232) described compounds, compounds described in JP-A-2000-066385, compounds described in JP-T-2004-534797, compounds described in JP-A-2017-019766, compounds described in Japanese Patent No. 6065596, compounds described in WO 2015 / 152153, compounds described in WO 2017 / 051680, compounds described in JP-A-2017-198865, compounds described in paragraphs 0025 to 0038 of WO 2017 / 164127, compounds described in WO 2013 / 167515 and the like, the contents of which are incorporated herein.

[0100] Preferred oxime compounds include, for example, compounds having the following structure: 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one. In the resin composition, it is particularly preferable to use an oxime compound as a photoradical polymerization initiator. The oxime compound as a photoradical polymerization initiator has a linking group of >C=N-O-C(=O)- in the molecule.

[0101]

[0102] Commercially available oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, IRGACURE OXE 04, and IRGACURE OXE 05 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304 and TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito ChemiX Co., Ltd.), and SpeedCure PDO (manufactured by SARTOMER ARKEMA) can also be used. In addition, an oxime compound having the following structure can also be used.

[0103] Examples of photoradical polymerization initiators include oxime compounds having a fluorene ring, oxime compounds having a skeleton in which at least one benzene ring of a carbazole ring is replaced with a naphthalene ring, and oxime compounds having a fluorine atom, as described in paragraphs 0169 to 0171 of WO 2021 / 112189. Also usable are oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds in which a substituent having a hydroxy group is bonded to a carbazole skeleton, as described in paragraphs 0208 to 0210 of WO 2021 / 020359. The contents of these compounds are incorporated herein by reference.

[0104] In addition, the compounds described in paragraphs 0113 to 0117 of JP-A No. 2023-058585 can also be used as the photopolymerization initiator. The description of this specification is incorporated herein by reference.

[0105] When the resin composition contains a photopolymerization initiator, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more types of photopolymerization initiators are contained, the total amount is preferably within the above range. Note that the photopolymerization initiator may also function as a thermal polymerization initiator, and therefore crosslinking by the photopolymerization initiator may be further promoted by heating in an oven, hot plate, or the like.

[0106] [Two or more types of polymerization initiators, etc.] The resin composition of the present invention may contain two or more types of polymerization initiators.

[0107] By including a photopolymerization initiator and a thermal polymerization initiator described below, pattern formation by exposure becomes possible, and radical polymerization also proceeds more easily during curing by a heating step described below, which may improve performance such as chemical resistance. When a photopolymerization initiator and a thermal polymerization initiator described below are included, the content of the thermal polymerization initiator is preferably 20 to 70% by mass, and more preferably 30 to 60% by mass, relative to the total content of the photopolymerization initiator and the thermal polymerization initiator.

[0108] Inclusion of a photoradical polymerization initiator and a photoacid generator may improve performance such as resolution. When a photopolymerization initiator and a photoacid generator are included, the content ratio of the photoacid generator relative to the total content of the photopolymerization initiator and the photoacid generator is preferably 20 to 70 mass %, more preferably 30 to 60 mass %.

[0109] [Thermal Polymerization Initiator] Examples of the thermal polymerization initiator include a thermal radical polymerization initiator. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or promotes the polymerization reaction of a polymerizable compound. Addition of a thermal radical polymerization initiator can also promote the polymerization reaction of the resin and the polymerizable compound, thereby further improving solvent resistance.

[0110] Specific examples of the thermal radical polymerization initiator include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein by reference.

[0111] When a thermal polymerization initiator is contained, the content thereof is preferably 0.1 to 30 mass% relative to the total solid content of the resin composition, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%. The resin composition may contain only one type of thermal polymerization initiator, or may contain two or more types. When two or more types of thermal polymerization initiators are contained, the total amount is preferably in the above range.

[0112] <Aniline Compound> From the viewpoint of resolution, the resin composition preferably contains an aniline compound. The aniline compound is preferably a compound that functions as a sensitizer, and more preferably a compound that has a sensitizing effect on the photoradical polymerization initiator. The sensitizer absorbs specific actinic radiation to enter an electronically excited state. The electronically excited sensitizer comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, resulting in electron transfer, energy transfer, heat generation, and other effects. This causes the thermal radical polymerization initiator or the photoradical polymerization initiator to undergo a chemical change and decompose, generating a radical, an acid, or a base. Furthermore, if a portion of the aniline compound remains in the cured product, it quenches acids generated within the cured product or acids introduced from outside the cured product, suppressing metal oxidation and potentially improving adhesion.

[0113] Preferred examples of the aniline compound include compounds containing a benzene ring structure having a dialkylamino group or a dihydroxyalkylamino group as a substituent.

[0114] Examples of aniline compounds include Michler's ketone, 4,4'-bis(diethylamino)benzophenone, 2,5-bis(4'-diethylaminobenzal)cyclopentane, 2,6-bis(4'-diethylaminobenzal)cyclohexanone, 2,6-bis(4'-diethylaminobenzal)-4-methylcyclohexanone, 4,4'-bis(dimethylamino)chalcone, 4,4'-bis(diethylamino)chalcone, p-dimethylaminocinnamylidene indanone, p-dimethylaminobenzylidene indanone, 2-(p-di methylaminophenylbiphenylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)benzothiazole, 2-(p-dimethylaminophenylvinylene)isonaphthothiazole, 1,3-bis(4'-dimethylaminobenzal)acetone, 1,3-bis(4'-diethylaminobenzal)acetone, 3,3'-carbonyl-bis(7-diethylaminocoumarin), 3-acetyl-7-dimethylaminocoumarin, 3-ethoxycarbonyl-7-dimethylaminocoumarin, 3-benzyloxycarbonyl-7-dimethyl Aminocoumarin, 3-methoxycarbonyl-7-diethylaminocoumarin, 3-ethoxycarbonyl-7-diethylaminocoumarin (ethyl 7-(diethylamino)coumarin-3-carboxylate), N-phenyl-N'-ethylethanolamine, N-phenyldiethanolamine, N-p-tolyldiethanolamine, N-phenylethanolamine, 4-morpholinobenzophenone, isoamyl dimethylaminobenzoate, isoamyl diethylaminobenzoate, dimethylaniline, bis(4-dimethylaminophenyl)methane, 2 1,2-d-mercaptobenzothiazole, 1-phenyl-5-mercaptotetrazole, 2-mercaptobenzothiazole, 2-(p-dimethylaminostyryl)benzoxazole, 2-(p-dimethylaminostyryl)benzothiazole, 2-(p-dimethylaminostyryl)naphtho(1,2-d)thiazole, 2-(p-dimethylaminobenzoyl)styrene, diphenylacetamide, benzanilide, N-methylacetanilide, 3′,4′-dimethylacetanilide, and the aniline compounds described in the examples below.

[0115] Among these, the aniline compound is preferably a compound represented by the following formula (AN-1) or (AN-2) (hereinafter also referred to as "compound A"). In formula (AN-1), R １１ and R １２ each independently represents a hydrogen atom or a monovalent organic group; R １１ and R １２ At least one of Ar contains a group represented by formula (R-1), １ represents an aromatic ring structure which may have a substituent or a condensed ring, n1 represents an integer of 2 or more, when n1 is 2, X represents a single bond or a divalent linking group, and when n1 is 3 or more, X represents an n1-valent linking group. ２１ and R ２２ each independently represents a hydrogen atom or a monovalent organic group; R ２１ and R ２２ At least one of Ar contains a group represented by formula (R-1), ２ represents an aromatic ring structure which may have a substituent or a condensed ring, and n2 represents an integer of 1 or more. In formula (R-1), R Ｒ１ and R Ｒ２ each independently represents a hydrogen atom or a monovalent organic group, and m R Ｒ１ may be the same or different, and m R Ｒ２ may be the same or different, m represents an integer of 2 or more, and * represents a bonding site to another structure.

[0116] In formula (AN-1), R １１ and R １２ is preferably a group represented by formula (R-1). １１ and R １２ is a hydrogen atom or a monovalent organic group other than the group represented by formula (R-1), R １１ and R １２ Preferably, one of the groups is a monovalent organic group different from the group represented by formula (R-1). Examples of the monovalent organic group different from the group represented by formula (R-1) include an alkyl group and an aryl group, with an alkyl group being preferred and a methyl group being more preferred.

[0117] In the group represented by formula (R-1), R Ｒ１ and R Ｒ２ each independently represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom or an alkyl group, and more preferably a hydrogen atom or a methyl group. Ｒ１ and R Ｒ２ are all hydrogen atoms. In formula (R-1), m represents an integer of 2 or more, preferably an integer of 2 to 4, more preferably 2 or 3, and even more preferably 2. Specific examples of the group represented by formula (R-1) are listed below, but the present invention is not limited to these. In the following specific examples, * has the same meaning as * in formula (R-1).

[0118] In formula (AN-1), Ar １ represents an aromatic ring structure which may have a substituent or a condensed ring. １ The aromatic ring structure in may be either an aromatic hydrocarbon ring structure or an aromatic heterocyclic ring structure, but is preferably an aromatic hydrocarbon ring structure, and more preferably a benzene ring structure. Examples of the substituent include an alkyl group, an aryl group, a halogen atom, etc., preferably an alkyl group, and more preferably a methyl group. Examples of the fused ring include a cycloalkane, an aromatic ring, etc., and is preferably a cyclopropane ring.

[0119] In formula (AN-1), n1 represents an integer of 2 to 4, preferably 2 or 3, and more preferably 2.

[0120] In formula (AN-1), when n1 is 2, X represents a single bond or a divalent linking group. The divalent linking group is preferably an alkylene group, a haloalkylene group, an arylene group, or a group represented by a combination thereof. The hydrogen atoms in these groups may be substituted with known substituents such as hydroxy groups and halogen atoms. The alkylene group is preferably an alkylene group having 1 to 4 carbon atoms, and more preferably a methylene group, ethylene group, or isopropylene group. The arylene group may be either an aromatic hydrocarbon group or an aromatic heterocyclic group, but is preferably an aromatic hydrocarbon group, and more preferably a phenylene group.

[0121] In formula (AN-1), when n1 is 3 or more, X represents an n1-valent linking group. The n1-valent linking group is preferably an aliphatic hydrocarbon group, an aromatic group, or a group represented by a combination thereof. The hydrogen atoms in these groups may be substituted with known substituents such as hydroxy groups. The aliphatic hydrocarbon group is preferably a saturated aliphatic hydrocarbon group, more preferably a saturated aliphatic hydrocarbon group having 1 to 4 carbon atoms. The aromatic group is preferably an aromatic hydrocarbon group, more preferably an aromatic hydrocarbon group having 6 carbon atoms.

[0122] In formula (AN-2), R ２１ and R ２２ A preferred embodiment of the formula (AN-1) is １１ and R １２ This is the same as the preferred embodiment of the above.

[0123] In formula (AN-2), Ar ２ represents an aromatic ring structure which may have a substituent or a condensed ring. Examples of the aromatic ring structure include a benzene ring structure, a carbazole ring structure, and a fluorene ring structure. Examples of the substituent include an alkyl group, an aryl group, and a halogen atom, with an alkyl group being preferred, and a methyl group being more preferred. Examples of the condensed ring include a cycloalkane and an aromatic ring, with a cyclopropane ring being preferred. Ar ２In the following specific examples, * represents the bonding site with the nitrogen atom in formula (AN-2).

[0124] In formula (AN-2), n2 is preferably an integer of 1 to 3, and more preferably 1 or 2.

[0125] Among these, the compound A is a compound represented by the formula (AN-1), and R １１ and R １２ are all groups represented by formula (R-1), and an embodiment in which m in formula (R-1) is 2 is preferred. Preferred embodiments of other symbols in the above embodiment are as described in the explanation of formula (AN-1) above.

[0126] The molecular weight of compound A is preferably 1,000 or less, more preferably 800 or less, and even more preferably 500 or less. There is no particular limitation on the lower limit of the molecular weight, but for example, it is preferably 150 or more, and more preferably 200 or more.

[0127] When the resin composition contains an aniline compound, the content of the aniline compound is preferably 0.01 to 20 mass%, more preferably 0.1 to 15 mass%, and still more preferably 0.5 to 10 mass%, based on the total solid content of the resin composition. The aniline compound may be used alone or in combination of two or more types.

[0128] Other sensitizing dyes may also be used as the sensitizer. Usable sensitizers include benzophenone-based, Michler's ketone-based, coumarin-based, pyrazole azo-based, anilino azo-based, triphenylmethane-based, anthraquinone-based, anthracene-based, anthrapyridone-based, benzylidene-based, oxonol-based, pyrazolotriazole azo-based, pyridone azo-based, cyanine-based, phenothiazine-based, pyrrolopyrazole azomethine-based, xanthene-based, phthalocyanine-based, benzopyran-based, and indigo-based compounds. For details of sensitizing dyes, please refer to the descriptions in paragraphs 0161 to 0163 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0129] <Chain Transfer Agent> The resin composition of the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684. Examples of chain transfer agents include those having -S-S-, -SO ２ Examples of compounds that can be used include compounds having -S-, -N-O-, SH, PH, SiH, and GeH, and dithiobenzoates, trithiocarbonates, dithiocarbamates, and xanthate compounds having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization. These compounds can donate hydrogen to low-activity radicals to generate radicals, or can be oxidized and then deprotonated to generate radicals. Thiol compounds are particularly preferred.

[0130] In addition, the chain transfer agent may be a compound described in paragraphs 0152 to 0153 of WO 2015 / 199219, the contents of which are incorporated herein by reference.

[0131] When the resin composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the total solid content of the resin composition. Only one type of chain transfer agent may be used, or two or more types may be used. When two or more types of chain transfer agents are used, the total content thereof is preferably within the above range.

[0132] <Specific Structure> The resin composition of the present invention preferably contains a structure (specific structure) represented by formula (1). In formula (1), * １ and * ２ each independently represents a binding site to another structure. When the resin composition of the present invention contains a structure represented by formula (1), it is sufficient that the structure represented by formula (1) is contained in the solid content of the resin composition. For example, the structure represented by formula (1) may be contained in the structure of a specific resin, or the resin composition may contain a compound that contains a structure represented by formula (1) but is different from the above-mentioned resin (hereinafter also referred to as a "specific compound"). Furthermore, the resin composition may contain a resin having a structure represented by formula (1) and also contain a specific compound.

[0133] When the resin composition of the present invention includes a structure represented by formula (1) and also includes a nitrogen-containing heterocyclic compound, it is believed that the interaction between the specific structure and the nitrogen-containing heterocyclic compound (particularly 8-azaadenine) results in the uniform distribution of the nitrogen-containing heterocyclic compound, which is a rust inhibitor, at the interface between copper and polyimide, thereby uniformly inhibiting copper corrosion. In particular, when the specific resin has an imide ring structure, the imide ring structure in the specific resin, the specific structure, and the nitrogen-containing heterocyclic compound form multipoint hydrogen bonds, thereby allowing the nitrogen-containing heterocyclic compound to be uniformly dispersed in the resin film. Furthermore, since the carbonyl group in the imide ring can also interact with copper, it is believed that as a result, the nitrogen-containing heterocyclic compound, which functions as a rust inhibitor, is uniformly distributed at the interface between copper and polyimide. Therefore, it is believed that copper corrosion can be uniformly inhibited and short circuits can be suppressed.

[0134] [R １ and R ２ ] In formula (1), R １ and R ２ each independently represents a phenyl group which may be substituted with a saturated aliphatic hydrocarbon group having 3 to 6 carbon atoms or an alkyl group having 1 to 10 carbon atoms. As the saturated aliphatic hydrocarbon group having 3 to 10 carbon atoms, an isopropyl group or a cyclohexyl group is more preferable. As the alkyl group having 1 to 10 carbon atoms which the phenyl group may have as a substituent, a branched alkyl group having 3 to 10 carbon atoms or a cyclic alkyl group having 5 to 10 carbon atoms is preferable, a branched alkyl group having 3 to 6 carbon atoms is more preferable, and an isopropyl group is even more preferable. When the phenyl group has a substituent, the number of substituents is not particularly limited, but is preferably 1 to 5, more preferably 1 to 3, and even more preferably 2. R １ and R２ are each independently preferably an isopropyl group, a cyclohexyl group, or a phenyl group which may be substituted with an isopropyl group.

[0135] [X １ ] In formula (1), X １ represents an oxygen atom or a sulfur atom, and is preferably an oxygen atom.

[0136] [L １ ] In formula (1), L １ is -C(=O)- or -S(=O) ２ -, with -C(=O)- being preferred.

[0137] [Ring structure] In formula (1), R １ , R ２ , * １ and * ２ At least two of the structures bonded to R may be bonded to form a ring structure. Examples of the ring structure formed include a hydantoin ring and an N-acylimidazolidinone ring, but are not limited to these. １ , R ２ , * １ and * ２ In another preferred embodiment, none of the structures bonded to form a ring structure.

[0138] [Formula (X-1)] When the resin composition of the present invention contains a structure represented by formula (1), the structure represented by formula (1) is preferably contained as a group represented by the following formula (X-1): In formula (X-1), R １ , R ２ , X １ and L １ are R in formula (1), respectively. １ , R ２ , X １ and L １ In formula (X-1), R ３ represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an aliphatic hydrocarbon group or an aromatic hydrocarbon group, more preferably a hydrogen atom. The aliphatic hydrocarbon group or aromatic hydrocarbon group is preferably the same as R １Examples of the groups include those exemplified as:

[0139] Specific examples of the group represented by formula (X-1) include, but are not limited to, the following groups: In the following formula, * represents a bonding site to other structures.

[0140] [Content] When the resin composition of the present invention contains a structure represented by formula (1), the molar content of the structure represented by formula (1) relative to the total solid content of the resin composition of the present invention is 0.005 to 0.5 mmol / g. The molar content is preferably 0.01 mmol / g to 0.3 mmol / g, and more preferably 0.015 to 0.2 mmol / g. When the molar content is equal to or less than the upper limit, for example, cyclization of the polyimide precursor and scission of the main chain of the specific resin are suppressed, making it easier to obtain a cured film with excellent storage stability of the composition. The method for measuring the content is not particularly limited, but examples include the measurement method described in the Examples below. The method for measuring the total solid content is not particularly limited, but examples include the measurement method described in the Examples below, in which the resin composition is dried at a set temperature and pressure while confirming the absence of volatile components other than the solvent. However, the method for measuring the total solid content is not limited, as long as it can determine the content of components other than the solvent in the resin composition as the total solid content. The content is the molar amount of the structure represented by formula (1) relative to the total solid content of the resin composition. For example, when the resin composition contains a resin having a structure represented by formula (1) and also contains a specific compound, the content is the total amount of the structure represented by formula (1) contained in the resin and the structure represented by formula (1) contained in the specific compound.

[0141] <Specific Compound> The resin composition of the present invention may contain a compound (specific compound) that contains the structure represented by the above formula (1) and is different from the above resin.

[0142] The specific compound is not particularly limited except that it contains the structure represented by formula (1), but is preferably a low molecular weight compound. Specifically, the molecular weight of the specific compound is preferably 75 to 1,000, more preferably 100 to 800, and even more preferably 150 to 500.

[0143] The specific compound is preferably a compound represented by the following formula (3-1):

[0144] In formula (3-1), R １ , R ２ , X １ and L １ are R in formula (1), respectively. １ , R ２ , X １ and L １ In formula (3-1), R ３ is R in formula (X-1) ３ The same applies to the preferred embodiments.

[0145] In formula (3-1), R ４ is a monovalent organic group, preferably a hydrocarbon group. The hydrocarbon group is preferably an aliphatic hydrocarbon group or an aromatic hydrocarbon group, more preferably an aromatic hydrocarbon group. The aliphatic hydrocarbon group is preferably a saturated aliphatic hydrocarbon group having 1 to 20 carbon atoms, more preferably a saturated aliphatic hydrocarbon group having 3 to 10 carbon atoms. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, more preferably a phenyl group or a naphthyl group, and even more preferably a phenyl group. R ４ The monovalent organic group in may have a substituent, and examples of the substituent include an alkyl group, an alkyloxycarbonyl group, and an aryloxycarbonyl group. ４ As the alkyl group, a phenyl group, an alkylphenyl group, or an alkyloxycarbonylphenyl group is preferred, and a phenyl group, a t-butylphenyl group, or an alkyloxycarbonylphenyl group having an alkyl group of 1 to 4 carbon atoms is more preferred.

[0146] In formula (3-1), R１ , R ２ , R ３ and R ４ At least two of these may be bonded to form a ring structure. Examples of the ring structure that can be formed include a hydantoin ring and an N-acylimidazolidinone ring, but are not limited to these. １ , R ２ , R ３ and R ４ An embodiment in which none of the above forms a ring structure is also a preferred embodiment.

[0147] Specific examples of preferred embodiments of the specific compounds are listed below, but the present invention is not limited to these.

[0148] When the resin composition contains a specific compound, the molar content of the structure represented by formula (1) relative to the total solid content of the resin composition may be appropriately adjusted so as to fall within the above-mentioned range. Furthermore, when the resin composition contains a specific compound, the content thereof is, for example, preferably 0.01 to 15.0 mass%, more preferably 0.05 to 10 mass%, and even more preferably 0.1 to 5.0 mass%, relative to the total solid content of the resin composition of the present invention. One type of specific compound may be used alone, or two or more types may be used. When two or more types are used in combination, the total amount is preferably within the above-mentioned range.

[0149] <Urea Compound, Carbodiimide Compound, Isourea Compound> From the viewpoint of breaking elongation and adhesion to a metal or resin layer, the resin composition of the present invention may contain at least one compound selected from the group consisting of urea compounds, carbodiimide compounds, and isourea compounds (hereinafter also referred to as "urea compound, etc."). Examples of the urea compound include a compound represented by the following formula (UR-1):

[0150] In formula (UR-1), formula (UR-2) or formula (UR-3), R １１ and R１２ each independently represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent, R ２１ and R ２２ each independently represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent, R ３１ and R ３２ each independently represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent, R ３３ represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent. １１ and R １２ are each independently preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms, or an aliphatic hydrocarbon group having 1 to 7 carbon atoms and having at least one substituent selected from the group consisting of a primary amine salt structure, a secondary amine salt structure, a tertiary amino group, a tertiary amine salt structure, and a quaternary ammonium group, and more preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms. １１ and R １２ The unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms in the formula (I) is preferably an unsubstituted saturated aliphatic hydrocarbon group having 1 to 7 carbon atoms, more preferably an unsubstituted saturated aliphatic hydrocarbon group having 2 to 7 carbon atoms, and more preferably an ethyl group, an isopropyl group, a t-butyl group, or a cyclohexyl group.

[0151] In formula (UR-1), R １１ and R １２ may each independently be an aliphatic hydrocarbon group having 2 to 7 carbon atoms and having at least one substituent selected from the group consisting of a hydroxy group, an alkoxy group, a thiol group, and an alkylthio group. The aliphatic hydrocarbon group having 2 to 7 carbon atoms may have two or more of the above-mentioned substituents, but it is also preferable that it have only one of the above-mentioned substituents.

[0152] In formula (UR-2), R ２１ and R ２２ each independently represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent. ２１ and R ２２is preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms, or an aliphatic hydrocarbon group having 1 to 7 carbon atoms and having an amino group or a quaternary ammonium group as a substituent, and more preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms. ２１ and R ２２ Preferred embodiments of the unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms or the substituted aliphatic hydrocarbon group having 1 to 7 carbon atoms in the above formula are respectively represented by R １１ and R １２ This is similar to what was shown in the explanation of .

[0153] In formula (UR-3), R ３１ and R ３２ is preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms, or an aliphatic hydrocarbon group having 1 to 7 carbon atoms and having an amino group or a quaternary ammonium group as a substituent, and more preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms. ３１ and R ３２ Preferred embodiments of the unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms or the substituted aliphatic hydrocarbon group having 1 to 7 carbon atoms in the above formula are respectively represented by R １１ and R １２ This is similar to what was shown in the explanation of .

[0154] In formula (UR-3), R ３３ represents an aliphatic hydrocarbon group having 1 to 7 carbon atoms which may have a substituent, is preferably an unsubstituted aliphatic hydrocarbon group having 1 to 7 carbon atoms, more preferably an unsubstituted saturated aliphatic hydrocarbon group having 1 to 7 carbon atoms, and even more preferably a saturated aliphatic hydrocarbon group having 1 to 4 carbon atoms. ３３ As the alkyl group, a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group or a t-butyl group is preferred, and an ethyl group is more preferred.

[0155] Specific examples of the urea compound include, but are not limited to, dicyclohexylurea, diisopropylurea, dicyclohexylcarbodiimide, diisopropylcarbodiimide, dicyclohexylisourea, and diisopropylisourea.

[0156] The total content of the urea compounds and the like is preferably 0.1 to 10.0 parts by mass, more preferably 0.5 to 8.0 parts by mass, and even more preferably 1.0 to 6.0 parts by mass, per 100 parts by mass of the specific resin. The urea compounds and the like may be used alone or in combination of two or more types. When two or more types of bases are used in combination in the base-containing treatment liquid, it is preferable that the total content thereof be within the above range.

[0157] <Polymerizable Compound> The resin composition of the present invention preferably contains a polymerizable compound. Examples of the polymerizable compound include a radical crosslinking agent and other crosslinking agents.

[0158] [Radical Crosslinking Agent] The resin composition of the present invention preferably contains a radical crosslinking agent. The radical crosslinking agent is a compound having a radical polymerizable group. The radical polymerizable group is preferably a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group. Among these, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred.

[0159] The radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more ethylenically unsaturated bonds. The radical crosslinking agent may have three or more ethylenically unsaturated bonds. The compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and even more preferably a compound having 2 to 6 ethylenically unsaturated bonds. From the viewpoint of the film strength of the obtained pattern (cured product), it is also preferable that the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and the compound having three or more ethylenically unsaturated bonds.

[0160] The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less. The lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.

[0161] Specific examples of radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), their esters, and amides. Preferred are esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyvalent amine compounds. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as a hydroxy group, an amino group, or a sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, and dehydration condensation reaction products of monofunctional or polyfunctional carboxylic acids. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having an electrophilic substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines, or thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having a leaving substituent such as a halogeno group or a tosyloxy group with monofunctional or polyfunctional alcohols, amines, or thiols. As another example, it is also possible to use a group of compounds in which the above-mentioned unsaturated carboxylic acids are replaced with unsaturated phosphonic acids, vinylbenzene derivatives such as styrene, vinyl ethers, allyl ethers, etc. Specific examples can be found in paragraphs 0113 to 0122 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0162] The radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0163] Other preferred radical crosslinking agents include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0164] Preferred radical crosslinking agents include dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), and dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and structures in which the (meth)acryloyl group is bonded via an ethylene glycol residue or a propylene glycol residue. Oligomers of these agents can also be used.

[0165] Commercially available radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate having four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates having four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate having six pentyleneoxy chains, and TPA-330, a trifunctional acrylate having three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers such as Examples of such an ester include UAS-10 and UAB-140 (manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corporation).

[0166] Suitable radical crosslinking agents include urethane acrylates such as those described in JP-B No. 48-041708, JP-A No. 51-037193, JP-B No. 02-032293, and JP-B No. 02-016765, and urethane compounds having an ethylene oxide skeleton such as those described in JP-B No. 58-049860, JP-B No. 56-017654, JP-B No. 62-039417, and JP-B No. 62-039418. Compounds having an amino structure or a sulfide structure in the molecule, such as those described in JP-A Nos. 63-277653, 63-260909, and JP-A No. 01-105238, can also be used as radical crosslinking agents.

[0167] The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group. Particularly preferred is a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. Examples of commercially available products include polybasic acid-modified acrylic oligomers M-510 and M-520 manufactured by Toagosei Co., Ltd.

[0168] The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH / g, more preferably 1 to 100 mgKOH / g. When the acid value of the radical crosslinking agent is within the above range, the agent has excellent handleability in production and developability. Furthermore, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.

[0169] As the radical crosslinking agent, a radical crosslinking agent having at least one selected from the group consisting of a urea bond and a urethane bond (hereinafter also referred to as "crosslinking agent U") is also preferred. When the resin composition contains crosslinking agent U, chemical resistance, resolution, etc. may be improved. Examples of crosslinking agent U include the compounds described in paragraphs 0133 to 0143 of WO 2023 / 190064, the contents of which are incorporated herein by reference.

[0170] From the viewpoints of pattern resolution and film stretchability, the resin composition preferably uses a bifunctional methacrylate or acrylate. Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl ... Examples of usable radical crosslinkers include xanediol diacrylate, 1,6-hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, ethylene oxide (EO) adduct diacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, EO-modified isocyanuric acid diacrylate, EO-modified isocyanuric acid dimethacrylate, and other bifunctional acrylates and bifunctional methacrylates having urethane bonds. Two or more of these may be mixed and used as needed. For example, PEG200 diacrylate refers to polyethylene glycol diacrylate with a formula weight of approximately 200 for the polyethylene glycol chain. From the viewpoint of suppressing warpage of the pattern (cured product), the resin composition of the present invention preferably uses a monofunctional radical crosslinker as the radical crosslinker.Preferred examples of monofunctional radical crosslinking agents include (meth)acrylic acid derivatives such as n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, and polypropylene glycol mono(meth)acrylate; N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam; and allyl glycidyl ether. Preferred monofunctional radical crosslinking agents include compounds having a boiling point of 100°C or higher under normal pressure in order to suppress volatilization before exposure. Other examples of bifunctional or higher radical crosslinking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.

[0171] When a radical crosslinking agent is contained, the content of the radical crosslinking agent is preferably more than 0% by mass and not more than 60% by mass, based on the total solid content of the resin composition. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.

[0172] The radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, the total amount thereof is preferably within the above range.

[0173] [Other Crosslinking Agents] The resin composition of the present invention preferably contains another crosslinking agent different from the radical crosslinking agent described above. The other crosslinking agent refers to a crosslinking agent other than the radical crosslinking agent described above. It is preferably a compound having multiple groups in its molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products upon exposure to light by the photoacid generator or photobase generator described above. A compound having multiple groups in its molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products under the action of an acid or base is more preferred. The acid or base is preferably an acid or base generated from a photoacid generator or photobase generator during the exposure step. Examples of other crosslinking agents include the compounds described in paragraphs 0179 to 0207 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0174] The content of the other crosslinking agent is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and particularly preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of other crosslinking agent may be contained, or two or more types may be contained. When two or more types of other crosslinking agents are contained, the total amount thereof is preferably within the above range.

[0175] <Base Generator> The resin composition of the present invention may contain a base generator. Here, the base generator is a compound capable of generating a base by physical or chemical action. Preferred base generators include thermal base generators and photobase generators. When the resin composition contains a thermal base generator, the cyclization reaction of the precursor can be promoted by heating, for example, and the mechanical properties and chemical resistance of the cured product can be improved, resulting in good performance as an interlayer insulating film for a rewiring layer included in a semiconductor package. The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines. The base generator is not particularly limited, and known base generators can be used. Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, α-lactone ring derivative compounds, phthalimide derivative compounds, and acyloxyimino compounds. Specific examples of non-ionic base generators include the compounds described in paragraphs 0249 to 0275 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0176] Examples of the base generator include, but are not limited to, the following compounds:

[0177]

[0178] The molecular weight of the nonionic base generator is preferably 800 or less, more preferably 600 or less, and even more preferably 500 or less. The lower limit is preferably 100 or more, more preferably 200 or more, and even more preferably 300 or more.

[0179] Specific preferred compounds for the ionic base generator include, for example, the compounds described in paragraphs 0148 to 0163 of WO 2018 / 038002.

[0180] Specific examples of ammonium salts include, but are not limited to, the following compounds:

[0181] Specific examples of iminium salts include, but are not limited to, the following compounds:

[0182] The base generator is preferably an amine in which the amino group is protected with a t-butoxycarbonyl group, from the viewpoints of storage stability and generating a base by deprotection during curing.

[0183] Examples of amine compounds protected by a t-butoxycarbonyl group include ethanolamine, 3-amino-1-propanol, 1-amino-2-propanol, 2-amino-1-propanol, 4-amino-1-butanol, 2-amino-1-butanol, 1-amino-2-butanol, 3-amino-2,2-dimethyl-1-propanol, 4-amino-2-methyl-1-butanol, valinol, 3-amino-1,2-propanediol, and 2-amino-1,3-propanediol. alcohol, tyramine, norephedrine, 2-amino-1-phenyl-1,3-propanediol, 2-aminocyclohexanol, 4-aminocyclohexanol, 4-aminocyclohexaneethanol, 4-(2-aminoethyl)cyclohexanol, N-methylethanolamine, 3-(methylamino)-1-propanol, 3-(isopropylamino)propanol, N-cyclohexylethanolamine, α-[2-(methylamino)ethyl]benzyl alcohol, diethanolamine diamine, diisopropanolamine, 3-pyrrolidinol, 2-pyrrolidinemethanol, 4-hydroxypiperidine, 3-hydroxypiperidine, 4-hydroxy-4-phenylpiperidine, 4-(3-hydroxyphenyl)piperidine, 4-piperidinemethanol, 3-piperidinemethanol, 2-piperidinemethanol, 4-piperidineethanol, 2-piperidineethanol, 2-(4-piperidyl)-2-propanol, 1,4-butanolbis(3-aminopropyl)ethanol ter, 1,2-bis(2-aminoethoxy)ethane, 2,2'-oxybis(ethylamine), 1,14-diamino-3,6,9,12-tetraoxatetradecane, 1-aza-15-crown-5-ether, diethylene glycol bis(3-aminopropyl)ether, 1,11-diamino-3,6,9-trioxaundecane, or compounds in which the amino group of an amino acid or a derivative thereof is protected with a t-butoxycarbonyl group, but are not limited to these.

[0184] When the resin composition contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass per 100 parts by mass of the resin in the resin composition. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less. One or more types of base generators can be used. When two or more types are used, the total amount is preferably within the above range.

[0185] <Solvent> The resin composition of the present invention preferably contains a solvent. Any known solvent can be used as the solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.

[0186] Examples of esters include ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, γ-valerolactone, alkyl alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters ...alkyloxypropionate, ethyl 3-alkyloxypropionate, 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3- Preferred examples thereof include alkyl esters of alkyloxypropionates (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, ethyl heptanoate, dimethyl malonate, and diethyl malonate.

[0187] Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, propylene glycol monopropyl ether acetate, and dipropylene glycol dimethyl ether.

[0188] Suitable examples of ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.

[0189] Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.

[0190] A preferred example of the sulfoxides is dimethyl sulfoxide.

[0191] Preferred examples of the amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.

[0192] Preferred examples of ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.

[0193] Examples of alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, and diacetone alcohol.

[0194] From the viewpoint of improving the properties of the coated surface, it is also preferable to mix two or more kinds of solvents.

[0195] In the present invention, one solvent selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, γ-valerolactone, 3-methoxy-N,N-dimethylpropanamide, 3-butoxy-N,N-dimethylpropanamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more solvents, is preferred. Particularly preferred are a combination of dimethyl sulfoxide and γ-butyrolactone, a combination of dimethyl sulfoxide and γ-valerolactone, a combination of 3-methoxy-N,N-dimethylpropanamide and γ-butyrolactone, a combination of 3-methoxy-N,N-dimethylpropanamide, γ-butyrolactone and dimethyl sulfoxide, or a combination of N-methyl-2-pyrrolidone and ethyl lactate. An embodiment in which toluene is further added to these combined solvents in an amount of approximately 1 to 10% by mass, based on the total mass of the solvent, is also a preferred embodiment of the present invention. In particular, from the viewpoint of the storage stability of the resin composition, an embodiment in which γ-valerolactone is included as a solvent is also a preferred embodiment of the present invention. In such an embodiment, the content of γ-valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The upper limit of the above content is not particularly limited and may be 100% by mass. The content may be determined in consideration of the solubility of the components, such as the specific resin, contained in the resin composition.Furthermore, when dimethyl sulfoxide and γ-valerolactone are used in combination, the solvent preferably contains 60 to 90% by mass of γ-valerolactone and 10 to 40% by mass of dimethyl sulfoxide, more preferably 70 to 90% by mass of γ-valerolactone and 10 to 30% by mass of dimethyl sulfoxide, and even more preferably 75 to 85% by mass of γ-valerolactone and 15 to 25% by mass of dimethyl sulfoxide, relative to the total mass of the solvent.

[0196] From the viewpoint of coatability, the content of the solvent is preferably an amount such that the total solids concentration of the resin composition of the present invention is 5 to 80 mass %, more preferably an amount such that the total solids concentration is 5 to 75 mass %, even more preferably an amount such that the total solids concentration is 10 to 70 mass %, and even more preferably an amount such that the total solids concentration is 20 to 70 mass %. The solvent content may be adjusted depending on the desired thickness of the coating film and the coating method. When two or more solvents are contained, the total amount of the solvents is preferably within the above range.

[0197] <Metal Adhesion Improver> The resin composition of the present invention preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used in electrodes, wiring, etc. Examples of metal adhesion improvers include silane coupling agents having an alkoxysilyl group, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure, compounds having a thiourea structure, phosphoric acid derivative compounds, β-ketoester compounds, and amino compounds.

[0198] [Silane Coupling Agent] Examples of silane coupling agents include the compounds described in paragraph 0316 of WO 2021 / 112189 and the compounds described in paragraphs 0067 to 0078 of JP 2018-173573 A, the contents of which are incorporated herein by reference. It is also preferable to use two or more different silane coupling agents, as described in paragraphs 0050 to 0058 of JP 2011-128358 A. It is also preferable to use the following compounds as the silane coupling agent. In the formula below, Me represents a methyl group, and Et represents an ethyl group. Furthermore, the following R represents a structure derived from a blocking agent in a blocked isocyanate group. The blocking agent may be selected depending on the desorption temperature, and examples include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds. For example, caprolactam is preferred from the viewpoint of achieving a desorption temperature of 160 to 180°C. Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0199]

[0200] Other silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- Examples of suitable silane coupling agents include (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride. These may be used alone or in combination of two or more. Furthermore, oligomeric compounds having multiple alkoxysilyl groups may also be used as silane coupling agents. Examples of such oligomeric compounds include compounds containing a repeating unit represented by the following formula (S-1): In formula (S-1), R Ｓ１ represents a monovalent organic group, R Ｓ２ represents a hydrogen atom, a hydroxy group or an alkoxy group, and n represents an integer of 0 to 2. Ｓ１is preferably a structure containing a polymerizable group. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group. A vinylphenyl group, a (meth)acrylamide group, or a (meth)acryloyloxy group is preferred, a vinylphenyl group or a (meth)acryloyloxy group is more preferred, and a (meth)acryloyloxy group is even more preferred. R Ｓ２ is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group. n represents an integer of 0 to 2, preferably 1. Here, the structures of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound may be the same. Here, of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound, it is preferable that n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and even more preferably that n is 1 in at least two. Such oligomer-type compounds can be commercially available products, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0201] [Aluminum-Based Adhesion Aid] Examples of aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.

[0202] Other metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP-A-2014-186186 and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP-A-2013-072935, the contents of which are incorporated herein by reference.

[0203] The content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the specific resin. By ensuring that the content is equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer is improved, and by ensuring that the content is equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern are improved. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above range.

[0204] <Light absorber> The resin composition of the present invention preferably contains a compound (light absorber) whose absorbance at the exposure wavelength is reduced by exposure. Examples of the light absorber include the compounds described in paragraphs 0159 to 0183 of WO 2022 / 202647 and the compounds described in paragraphs 0088 to 0108 of JP 2019-206689 A. The contents of these compounds are incorporated herein by reference.

[0205] It is also preferable to include a compound having the following structure as the light absorber.

[0206] The content of the light absorber relative to the total solid content of the resin composition of the present invention is not particularly limited, but is preferably 0.1 to 20 mass%, more preferably 0.5 to 10 mass%, and even more preferably 1 to 5 mass%.

[0207] <Nitrogen-Containing Heterocyclic Compound> The resin composition preferably further contains a nitrogen-containing heterocyclic compound. The nitrogen-containing heterocyclic compound acts as a migration inhibitor, and can effectively inhibit the migration of metal ions derived from the metal layer (or metal wiring) into the film when the resin composition is applied to a metal layer (or metal wiring), for example. Furthermore, nitrogen-containing heterocyclic compounds, particularly 8-azaadenine, can form hydrogen bonds with carboxylic acid groups in the specific resin having the above-mentioned esterification rate, which is believed to inhibit the formation of a copper oxide film. That is, when the esterification rate of the resin is 99.90% or less, the nitrogen-containing heterocyclic compound can be effectively distributed near the copper wiring due to its interaction with the carboxylic acid groups of the resin. Furthermore, when the esterification rate of the resin is 90.00% or more, the copper corrosion effect of the carboxylic acid groups can be prevented from exceeding the rust-preventing effect of the nitrogen-containing heterocyclic compound.

[0208] The nitrogen-containing heterocyclic compound is not particularly limited, but is preferably a nitrogen-containing aromatic heterocyclic compound, such as a compound having a pyrrole ring, an imidazole ring, an oxazole ring, a thiazole ring, a pyrazole ring, an isoxazole ring, an isothiazole ring, a tetrazole ring, a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a piperidine ring, a piperazine ring, a morpholine ring, a triazine ring, or a nitrogen-containing condensed ring (such as a purine ring). In particular, triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, and 3,5-diamino-1,2,4-triazole, tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole, and 8-azaadenine are preferably used. Among these, the resin composition preferably contains 8-azaadenine.

[0209] When the resin composition contains a nitrogen-containing heterocyclic compound, the content of the nitrogen-containing heterocyclic compound is preferably 0.01 to 5.0 mass%, more preferably 0.05 to 2.0 mass%, and even more preferably 0.1 to 1.0 mass%, based on the total solid content of the resin composition.

[0210] The nitrogen-containing heterocyclic compound may be one kind or two or more kinds. When two or more kinds of nitrogen-containing heterocyclic compounds are used, the total amount thereof is preferably within the above range.

[0211] <Other Migration Inhibitors> The resin composition may contain other migration inhibitors.

[0212] Other migration inhibitors include compounds having a furan ring, compounds having a thiophene ring, thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, hydrazide derivative compounds, rust inhibitors described in paragraph 0094 of JP-A-2013-015701, compounds described in paragraphs 0073 to 0076 of JP-A-2009-283711, compounds described in paragraph 0052 of JP-A-2011-059656, compounds described in paragraphs 0114, 0116 and 0118 of JP-A-2012-194520, compounds described in paragraph 0166 of WO 2015 / 199219, and the like, the contents of which are incorporated herein by reference. As a migration inhibitor, an ion trapping agent that captures anions such as halogen ions can also be used.

[0213] When the resin composition contains another migration inhibitor, the content of the other migration inhibitor is preferably 0.01 to 5.0 mass%, more preferably 0.05 to 2.0 mass%, and even more preferably 0.1 to 1.0 mass%, based on the total solid content of the resin composition.

[0214] The other migration inhibitor may be one kind or two or more kinds. When two or more kinds of migration inhibitors are used, the total amount thereof is preferably within the above range. Furthermore, the total amount of the nitrogen-containing heterocyclic compound and the other migration inhibitor is preferably within the above range.

[0215] <Organotitanium Compound> When the resin composition contains an organotitanium compound, a resin layer having excellent chemical resistance can be formed even when cured at low temperatures.

[0216] Usable organic titanium compounds include those in which an organic group is bonded to a titanium atom via a covalent bond or an ionic bond. Specific examples of organic titanium compounds are shown below in I) to VII): I) Titanium chelate compounds: Titanium chelate compounds having two or more alkoxy groups are more preferred because they provide good storage stability to the resin composition and a good curing pattern. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate), titanium diisopropoxide bis(tetramethylheptanedionate), and titanium diisopropoxide bis(ethylacetoacetate). II) Tetraalkoxytitanium compounds: for example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis{2,2-(allyloxymethyl)butoxide}], etc. III) Titanocene compounds: for example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, etc. IV) Monoalkoxytitanium compounds: for example, titanium tris(dioctylphosphate)isopropoxide, titanium tris(dodecylbenzenesulfonate)isopropoxide, etc. V) Titanium oxide compounds: for example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide, etc.VI) Titanium tetraacetylacetonate compounds: for example, titanium tetraacetylacetonate, etc. VII) Titanate coupling agents: for example, isopropyl tridodecylbenzenesulfonyl titanate, etc.

[0217] Among these, from the viewpoint of better chemical resistance, the organic titanium compound is preferably at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds. In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium are preferred.

[0218] It is also preferable to contain a titanium complex compound as the organotitanium compound or in place of the organotitanium compound, and examples of the titanium complex compound include compounds represented by the following formula (T-1). In formula (T-1), M is titanium, zirconium, or hafnium, l1 is an integer of 0 to 2, l2 is 0 or 1, l1 + l2 × 2 is an integer of 0 to 2, m is an integer of 0 to 4, n is an integer of 0 to 2, l1 + l2 + m + n × 2 = 4, and R １１ are each independently a substituted or unsubstituted cyclopentadienyl group, a substituted or unsubstituted alkoxy group, or a substituted or unsubstituted phenoxy group; R １２ is a substituted or unsubstituted hydrocarbon group, R ２ are each independently a group containing a structure represented by the following formula (T-2), and R ３ are each independently a group containing a structure represented by the following formula (T-2), Ａ are each independently an oxygen atom or a sulfur atom. In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, * represents a bonding site to another structure, and # represents a bonding site to a metal atom.

[0219] In formula (T-1), from the viewpoint of storage stability of the composition, M is preferably titanium. In formula (T-1), an embodiment in which l1 and l2 are 0 is also one of the preferred embodiments of the present invention. In formula (T-1), m is preferably 2 or 4, and more preferably 2. In formula (T-1), n ​​is preferably 1 or 2, and more preferably 1. Here, it is also preferable that in formula (T-1), l1 and l2 are 0, and m is 0, 2, or 4.

[0220] In formula (T-1), from the viewpoint of the stability of the specific metal complex, R １１ is preferably a substituted or unsubstituted cyclopentadienyl ligand. １１ The cyclopentadienyl group, alkoxy group and phenoxy group in the formula (I) may be substituted, but an embodiment in which they are unsubstituted is also one of the preferred embodiments of the present invention.

[0221] In formula (T-1), R １２ is preferably a hydrocarbon group having 1 to 20 carbon atoms, and more preferably a hydrocarbon group having 2 to 10 carbon atoms. １２ The hydrocarbon group in may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group, but an aromatic hydrocarbon group is preferred. The aliphatic hydrocarbon group may be either a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group, but a saturated aliphatic hydrocarbon group is preferred. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, and even more preferably a phenylene group. R １２ The substituent in R is preferably a monovalent substituent, such as a halogen atom. １２ When R is an aromatic hydrocarbon group, it may have an alkyl group as a substituent. １２ is preferably an unsubstituted phenylene group. １２ The phenylene group in is preferably a 1,2-phenylene group.

[0222] In formula (T-1), m is 2 or more, and R ２ If two or more are included,２ In formula (T-1), n ​​is 2 or more, and R ３ If two or more are included, ３ The structures may be the same or different.

[0223] In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, and it is preferable that at least one represents -C(-*)=, and it is more preferable that at least two represent -C(-*)=.

[0224] Specific examples of the compound represented by formula (T-1) include compounds I-1 and I-2 in the examples, but are not limited to these.

[0225] When an organotitanium compound is contained, the content thereof is preferably 0.05 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, and even more preferably 0.1 to 2 parts by mass, relative to 100 parts by mass of the specific resin. When the content is 0.05 part by mass or more, the heat resistance and chemical resistance of the obtained cured pattern are improved, and when it is 10 parts by mass or less, the storage stability of the composition is superior.

[0226] <Antioxidant> The cured product of the present invention may contain an antioxidant. In the present invention, the antioxidant refers to a compound that has the function of preventing oxidation of metals, and examples thereof include phenolic compounds, phosphite ester compounds, and thioether compounds. As the phenolic compound, any phenolic compound known as a phenolic antioxidant can be used. Preferred phenolic compounds include hindered phenolic compounds. Compounds having a substituent at the position adjacent to the phenolic hydroxy group (ortho position) are preferred. As the substituent, a substituted or unsubstituted alkyl group having 1 to 22 carbon atoms is preferred. Furthermore, as the antioxidant, compounds having a phenol group and a phosphite ester group in the same molecule are also preferred.

[0227] Since the antioxidant prevents oxidation of the metal, it is believed that the cured product containing the antioxidant has excellent adhesion. Furthermore, since the antioxidant suppresses polymerization of the polymerizable compound during storage of the resin composition, it is believed that the resin composition containing the antioxidant has excellent storage stability and excellent resolution of the resulting cured product.

[0228] The antioxidant preferably has an isocyanuric acid skeleton, and more preferably is a hindered phenol compound having an isocyanuric acid skeleton.

[0229] Examples of preferred antioxidants include 2,2-thiobis(4-methyl-6-t-butylphenol), 2,6-di-t-butylphenol, and the compound represented by formula (3).

[0230]

[0231] In general formula (3), R ５ represents a hydrogen atom or an alkyl group having one or more carbon atoms, and R ６ represents an alkylene group having 1 or more carbon atoms, an alkylenecarbonyl group having 2 or more carbon atoms, or an alkylenecarbonyloxy group having 2 or more carbon atoms; R ７ represents a monovalent to tetravalent organic group containing at least one of an alkylene group having two or more carbon atoms, an O atom, and an N atom; i represents an integer of 1 to 4; j represents an integer of 0 to 4; i+j is an integer of 1 to 4; and k represents an integer of 1 to 4.

[0232] By including the compound represented by general formula (3), oxidation of the metal is inhibited, and oxidative deterioration of the aliphatic groups and phenolic hydroxyl groups of the resin is inhibited.

[0233] R ５ is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group. ６ When R is an alkylene group, it is preferably an alkylene group having 1 to 5 carbon atoms, more preferably an alkylene group having 1 to 3 carbon atoms. ６ When R is an alkylenecarbonyl group, it is preferably an alkylenecarbonyl group having 3 to 6 carbon atoms, more preferably a methyl group. ７ It is preferred that R６ When R is an alkylenecarbonyloxy group, it is preferably an alkylenecarbonyloxy group having 3 to 4 carbon atoms, more preferably a methyl group. ７ Examples of the group include an alkyl group, a cycloalkyl group, an alkoxy group, an alkyl ether group, an alkylsilyl group, an alkoxysilyl group, an aryl group, an aryl ether group, a carboxyl group, a carbonyl group, an allyl group, a vinyl group, a heterocyclic group, -O-, -NH-, -NHNH-, and combinations thereof, and may further have a substituent. Among these, from the viewpoints of developability and metal adhesion, it is preferable to have an alkyl ether, -NH-, or an isocyanuric ring, and from the viewpoints of interaction with the resin and metal adhesion due to metal complex formation, an isocyanuric ring is more preferable.

[0234] i is preferably 1 or 2, and more preferably 1. j is preferably an integer of 0 to 3, and more preferably an integer of 0 to 2. k is more preferably an integer of 2 to 4.

[0235] Examples of the compound represented by the following general formula (3) include, but are not limited to, the following structures.

[0236]

[0237]

[0238]

[0239]

[0240] Other examples of the antioxidant include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic ring compounds, and metal compounds.

[0241] Specific examples of these compounds include the compounds described in paragraph 0310 of WO 2021 / 112189, p-hydroquinone, o-hydroquinone, p-methoxyphenol, 2-nitroso-1-naphthol, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, and the like, the contents of which are incorporated herein by reference.

[0242] Furthermore, phosphorus-based antioxidants can also be suitably used, such as tris[2-[[2,4,8,10-tetrakis(1,1-dimethylethyl)dibenzo[d,f][1,3,2]dioxaphosphepin-6-yl]oxy]ethyl]amine, tris[2-[(4,6,9,11-tetra-tert-butyldibenzo[d,f][1,3,2]dioxaphosphepin-2-yl)oxy]ethyl]amine, and ethylbis(2,4-di-tert-butyl-6-methylphenyl)phosphite. Commercially available antioxidants include, for example, ADK STAB AO-20, ADK STAB AO-30, ADK STAB AO-40, ADK STAB AO-50, ADK STAB AO-50F, ADK STAB AO-60, ADK STAB AO-60G, ADK STAB AO-80, and ADK STAB AO-330 (all manufactured by ADEKA Corporation). The antioxidant may also be a compound described in paragraphs 0023 to 0048 of Japanese Patent No. 6268967. The composition of the present invention may also contain a latent antioxidant, if necessary. Examples of latent antioxidants include compounds in which the moiety functioning as an antioxidant is protected with a protecting group, and which function as an antioxidant upon heating at 100 to 250°C or at 80 to 200°C in the presence of an acid / base catalyst, whereby the protecting group is eliminated. Examples of the latent antioxidant include the compounds described in WO 2014 / 021023, WO 2017 / 030005, and JP 2017-008219 A. Commercially available latent antioxidants include ADEKA ARCLES GPA-5001 (manufactured by ADEKA Corporation).

[0243] The content of the antioxidant is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin. By adding an amount of 0.1 part by mass or more, it is easy to obtain the effect of improving elongation properties and adhesion to metal materials even in high-temperature, high-humidity environments, and by adding an amount of 10 parts by mass or less, the sensitivity of the resin composition is improved, for example, through interaction with the photosensitizer. Only one type of antioxidant may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount thereof be within the above range.

[0244] <Polymerization Inhibitor> The resin composition of the present invention preferably contains a polymerization inhibitor. Examples of the polymerization inhibitor include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic ring compounds, and metal compounds.

[0245] Specific examples of the polymerization inhibitor include the compounds described in paragraph 0310 of WO 2021 / 112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, and the like, the contents of which are incorporated herein by reference.

[0246] When the resin composition of the present invention contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20 mass%, more preferably 0.02 to 15 mass%, and even more preferably 0.05 to 10 mass%, based on the total solid content of the resin composition.

[0247] The polymerization inhibitor may be one kind or two or more kinds. When two or more kinds of polymerization inhibitors are used, the total amount thereof is preferably within the above range.

[0248] <Other Additives> The resin composition of the present invention may contain various additives, such as surfactants, higher fatty acid derivatives, inorganic particles, UV absorbers, photoacid generators, anti-aggregation agents, phenolic compounds, other polymer compounds, plasticizers, and other auxiliary agents (e.g., antifoaming agents, flame retardants, etc.), as needed, within the scope of obtaining the effects of the present invention. By appropriately incorporating these components, properties such as film physical properties can be adjusted. For details of these components, please refer to, for example, paragraphs 0183 and after of JP 2012-003225 A (corresponding to paragraph 0237 of U.S. Patent Application Publication No. 2013 / 0034812), and paragraphs 0101 to 0104, 0107 to 0109, etc. of JP 2008-250074 A, the contents of which are incorporated herein by reference. When these additives are incorporated, the total content is preferably 3% by mass or less of the solid content of the resin composition of the present invention.

[0249] [Surfactant] Various surfactants can be used as the surfactant, such as a fluorine-based surfactant, a silicone-based surfactant, a hydrocarbon-based surfactant, etc. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.

[0250] By adding a surfactant to the resin composition of the present invention, the liquid properties (particularly fluidity) of the coating liquid composition when prepared are further improved, and the uniformity of the coating thickness and the liquid saving can be further improved. That is, when a film is formed using a coating liquid containing a surfactant, the interfacial tension between the surface to be coated and the coating liquid is reduced, improving the wettability of the surface to be coated and the coatability of the surface to be coated. Therefore, it is possible to more suitably form a uniform film with small thickness unevenness.

[0251] Examples of fluorine-based surfactants include the compounds described in paragraph 0328 of WO 2021 / 112189, the contents of which are incorporated herein by reference. As the fluorine-based surfactant, fluorine-containing polymer compounds containing a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a repeating unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups, propyleneoxy groups) can also be preferably used, and examples thereof include the following compounds.

[0252] The weight-average molecular weight of the above compound is preferably 3,000 to 50,000, and more preferably 5,000 to 30,000. As the fluorosurfactant, a fluorine-containing polymer having an ethylenically unsaturated group in the side chain can also be used. Specific examples include the compounds described in paragraphs 0050 to 0090 and 0289 to 0295 of JP 2010-164965 A, the contents of which are incorporated herein by reference. Commercially available products include Megafac RS-101, RS-102, and RS-718K manufactured by DIC Corporation.

[0253] The fluorine content in the fluorine-containing surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass. A fluorine-containing surfactant having a fluorine content within this range is effective in terms of uniformity of the thickness of the coating film and liquid saving, and also has good solubility in the composition.

[0254] Examples of silicone surfactants, hydrocarbon surfactants, nonionic surfactants, cationic surfactants, and anionic surfactants include the compounds described in paragraphs 0329 to 0334 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0255] The surfactant may be used alone or in combination of two or more. The content of the surfactant is preferably 0.001 to 2.0 mass %, more preferably 0.005 to 1.0 mass %, based on the total solid content of the composition.

[0256] [Inorganic Particles] Specific examples of inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, and glass.

[0257] The average particle size of the inorganic particles is preferably 0.01 to 2.0 μm, more preferably 0.02 to 1.5 μm, even more preferably 0.03 to 1.0 μm, and particularly preferably 0.04 to 0.5 μm. The above average particle size of the inorganic particles is the primary particle size and also the volume average particle size. The volume average particle size can be measured, for example, by dynamic light scattering using a Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.). If the above measurement is difficult, it can also be measured by centrifugal sedimentation light transmission method, X-ray transmission method, or laser diffraction / scattering method.

[0258] Other additives include compounds described in paragraphs 0249 to 0282 and 0316 to 0358 of WO 2022 / 145355, the disclosures of which are incorporated herein by reference.

[0259] <Characteristics of Resin Composition> The viscosity of the resin composition of the present invention at 23°C can be adjusted by the solid content concentration of the resin composition. ２ / s~12,000mm ２ / s is preferred, and 2,000 mm ２ / s~10,000mm ２ / s is more preferable, and 2,500 mm ２ / s~8,000mm ２ Within the above range, it is easy to obtain a highly uniform coating film. ２ If the thickness is more than 12,000 mm / s, it is easy to apply the coating to a thickness required for an insulating film for rewiring, for example. ２ If the viscosity is less than 1 / s, a coating film with excellent surface condition can be obtained.

[0260] <Restrictions on substances contained in the resin composition> The water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition is improved. Methods for maintaining the water content include adjusting the humidity under storage conditions and reducing the porosity of the storage container during storage.

[0261] From the viewpoint of insulating properties, the metal content of the resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, the total amount of these metals is preferably within the above range.

[0262] Furthermore, examples of methods for reducing metal impurities unintentionally contained in the resin composition of the present invention include selecting raw materials with a low metal content as raw materials for constituting the resin composition of the present invention, filtering the raw materials for constituting the resin composition of the present invention, and lining the inside of the apparatus with polytetrafluoroethylene or the like to perform distillation under conditions that minimize contamination as much as possible.

[0263] Considering the use of the resin composition of the present invention as a semiconductor material, the content of halogen atoms is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, and even more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosion. In particular, those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass. Examples of halogen atoms include chlorine atoms and bromine atoms. It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above-mentioned range. Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.

[0264] A conventionally known container can be used as a container for storing the resin composition of the present invention. For the purpose of preventing impurities from being mixed into the raw materials or the resin composition of the present invention, it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six resin layers, or a bottle with a seven-layer structure made of six types of resin. Examples of such containers include the container described in JP 2015-123351 A.

[0265] <Cured Product of Resin Composition> A cured product of the resin composition can be obtained by curing the resin composition of the present invention. The cured product of the present invention is a cured product obtained by curing the resin composition. The resin composition is preferably cured by heating, with a heating temperature of 120°C to 400°C being more preferred, 140°C to 380°C being even more preferred, and 170°C to 350°C being particularly preferred. The form of the cured product of the resin composition is not particularly limited, and can be selected depending on the application, such as a film, rod, sphere, or pellet. In the present invention, the cured product is preferably in the form of a film. By patterning the resin composition, the shape of the cured product can be selected depending on the application, such as forming a protective film on a wall surface, forming via holes for electrical conductivity, adjusting impedance, capacitance, or internal stress, or imparting heat dissipation functionality. The film thickness of the cured product (film made of the cured product) is preferably 0.5 μm or more and 150 μm or less. The shrinkage rate when the resin composition of the present invention is cured is preferably 50% or less, more preferably 45% or less, and even more preferably 40% or less. Here, the shrinkage rate refers to the percentage of change in volume of the resin composition before and after curing, and can be calculated by the following formula: Shrinkage rate [%] = 100 - (volume after curing / volume before curing) x 100

[0266] <Characteristics of cured product of resin composition> The imidization reaction rate of the cured product of the resin composition of the present invention is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. If it is 70% or more, the cured product may have excellent mechanical properties. The elongation at break of the cured product of the resin composition of the present invention is preferably 30% or more, more preferably 40% or more, and even more preferably 50% or more. The glass transition temperature (Tg) of the cured product of the resin composition of the present invention is preferably 180°C or more, more preferably 210°C or more, and even more preferably 230°C or more.

[0267] <Preparation of Resin Composition> The resin composition of the present invention can be prepared by mixing the above-mentioned components. The mixing method is not particularly limited, and can be carried out by a conventionally known method. Examples of the mixing method include mixing with a stirring blade, mixing with a ball mill, and mixing by rotating a tank. The temperature during mixing is preferably 10 to 30°C, more preferably 15 to 25°C.

[0268] For the purpose of removing foreign matter such as dust and fine particles from the resin composition of the present invention, filtration using a filter is preferably performed. The filter pore size is, for example, preferably 5 μm or less, more preferably 1 μm or less, even more preferably 0.5 μm or less, and even more preferably 0.1 μm or less. The filter material is preferably polytetrafluoroethylene, polyethylene, or nylon. When the filter material is polyethylene, HDPE (high density polyethylene) is more preferable. Examples of filters include the filters described in paragraph 0287 of WO 2023 / 190064. The above content is incorporated herein by reference.

[0269] (Method for producing a cured product) The method for producing a cured product of the present invention preferably includes a film-forming step in which a resin composition is applied to a substrate to form a film. The method for producing a cured product more preferably includes the film-forming step, an exposure step in which the film formed in the film-forming step is selectively exposed to light, and a development step in which the film exposed in the exposure step is developed using a developer to form a pattern. The method for producing a cured product particularly preferably includes the film-forming step, the exposure step, the development step, and at least one of a heating step in which the pattern obtained in the development step is heated and a post-development exposure step in which the pattern obtained in the development step is exposed to light. The method for producing a cured product also preferably includes the film-forming step and a step of heating the film. Details of each step are described below.

[0270] <Film Forming Step> The resin composition of the present invention can be used in a film forming step of applying the resin composition to a substrate to form a film. The method for producing a cured product of the present invention preferably includes a film forming step of applying the resin composition to a substrate to form a film.

[0271] [Substrate] The type of substrate can be appropriately determined depending on the application and is not particularly limited. Examples of substrates include semiconductor production substrates such as silicon, silicon nitride, polysilicon, silicon oxide, and amorphous silicon, quartz, glass, optical films, ceramic materials, vapor deposition films, magnetic films, reflective films, metal substrates such as Ni, Cu, Cr, and Fe (for example, substrates formed from metal and substrates on which a metal layer is formed by, for example, plating or vapor deposition), paper, SOG (Spin On Glass), TFT (Thin Film Transistor) array substrates, mold substrates, and plasma display panel (PDP) electrode plates. Substrates are particularly preferably semiconductor production substrates, with silicon substrates, Cu substrates, and mold substrates being more preferred. These substrates may have a surface layer such as an adhesion layer or an oxide layer formed by hexamethyldisilazane (HMDS) or the like. The shape of the substrate is not particularly limited and may be circular or rectangular. The size of the substrate is preferably, for example, a diameter of 100 to 450 mm, more preferably 200 to 450 mm, if it is circular. If it is rectangular, the length of the short side is preferably, for example, 100 to 1000 mm, more preferably 200 to 700 mm. As the substrate, for example, a plate-shaped, preferably a panel-shaped substrate (substrate) is used.

[0272] When a film is formed by applying a resin composition to the surface of a resin layer (for example, a layer made of a cured product) or the surface of a metal layer, the resin layer or the metal layer serves as the substrate.

[0273] Coating is preferred as a means for applying the resin composition to a substrate. Specific application methods include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet coating. From the viewpoint of uniformity of film thickness, spin coating, slit coating, spray coating, or inkjet coating is preferred, and from the viewpoint of uniformity of film thickness and productivity, spin coating and slit coating are more preferred. A film of the desired thickness can be obtained by adjusting the solid content concentration of the resin composition and coating conditions depending on the application method. Furthermore, the coating method can be appropriately selected depending on the shape of the substrate. For circular substrates such as wafers, spin coating, spray coating, inkjet coating, etc. are preferred, and for rectangular substrates, slit coating, spray coating, inkjet coating, etc. are preferred. In the case of spin coating, for example, it can be applied at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes. Alternatively, a method can be used in which a coating film formed by applying the coating composition to a temporary support using the above-described application method is transferred onto the substrate. Regarding the transfer method, the preparation methods described in paragraphs 0023 and 0036 to 0051 of JP-A No. 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can be suitably used. A step of removing excess film from the edge of the substrate may also be performed. Examples of such a step include edge bead rinsing (EBR) and back rinsing. A pre-wetting step may also be employed in which various solvents are applied to the substrate before applying the resin composition to improve the wettability of the substrate.

[0274] <Drying Step> After the film-forming step (layer-forming step), the film may be subjected to a step (drying step) of drying the formed film (layer) to remove the solvent. That is, the method for producing a cured product of the present invention may include a drying step of drying the film formed in the film-forming step. The drying step is preferably carried out after the film-forming step and before the exposure step. The drying temperature of the film in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, and even more preferably 90 to 110°C. Drying may also be carried out under reduced pressure. The drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.

[0275] <Exposure Step> The film may be subjected to an exposure step in which the film is selectively exposed to light. The method for producing a cured product may include an exposure step in which the film formed in the film formation step is selectively exposed to light. Selective exposure means that a portion of the film is exposed to light. Furthermore, selective exposure forms exposed regions (exposed portions) and unexposed regions (unexposed portions) in the film. The exposure dose is not particularly limited as long as it can cure the resin composition of the present invention, but for example, it is 50 to 10,000 mJ / cm2 in terms of exposure energy at a wavelength of 365 nm. ２ is preferred, and 200 to 8,000 mJ / cm ２ is more preferred.

[0276] The exposure wavelength can be appropriately determined within the range of 190 to 1,000 nm, and is preferably 240 to 550 nm.

[0277] The exposure wavelengths, in relation to the light source, are: (1) semiconductor laser (wavelengths 830 nm, 532 nm, 488 nm, 405 nm, 375 nm, 355 nm, etc.); (2) metal halide lamp; (3) high-pressure mercury lamp, g-line (wavelength 436 nm), h-line (wavelength 405 nm), i-line (wavelength 365 nm), broad (three wavelengths of g, h, and i-line); (4) excimer laser, KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength 193 nm), F ２Examples of such light include excimer laser (wavelength 157 nm), (5) extreme ultraviolet light; EUV (wavelength 13.6 nm), (6) electron beam, and (7) YAG laser second harmonic 532 nm and third harmonic 355 nm. For the resin composition of the present invention, exposure with a high-pressure mercury lamp is particularly preferred, and exposure with i-line is more preferred from the viewpoint of exposure sensitivity. The exposure method is not particularly limited as long as it is a method that exposes at least a portion of the film made of the resin composition of the present invention, and examples thereof include exposure using a photomask and exposure by laser direct imaging.

[0278] <Post-Exposure Bake Step> The film may be subjected to a heating step (post-exposure bake step) after exposure. That is, the method for producing a cured product of the present invention may include a post-exposure bake step in which the film exposed in the exposure step is heated. The post-exposure bake step can be carried out after the exposure step and before the development step. The heating temperature in the post-exposure bake step is preferably 50°C to 140°C, more preferably 60°C to 120°C. The heating time in the post-exposure bake step is preferably 30 seconds to 300 minutes, more preferably 1 minute to 10 minutes. The temperature rise rate in the post-exposure bake step from the temperature at the start of heating to the maximum heating temperature is preferably 1 to 12°C / min, more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. The temperature rise rate may also be changed as appropriate during heating. The heating means in the post-exposure bake step is not particularly limited, and known hot plates, ovens, infrared heaters, etc. may be used. It is also preferable to carry out the heating in an atmosphere of low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon.

[0279] <Development step> The above-mentioned film after exposure may be subjected to a development step in which it is developed using a developer to form a pattern. That is, the method for producing a cured product of the present invention may include a development step in which the film exposed in the exposure step is developed using a developer to form a pattern. By carrying out development, one of the exposed and unexposed parts of the film is removed to form a pattern. Here, development in which the unexposed parts of the film are removed in the development step is called negative development, and development in which the exposed parts of the film are removed in the development step is called positive development.

[0280] [Developer] The developer used in the development step may be an aqueous alkaline solution or a developer containing an organic solvent.

[0281] When the developer is an alkaline aqueous solution, examples of the basic compound that the alkaline aqueous solution may contain include inorganic alkalis, primary amines, secondary amines, tertiary amines, and quaternary ammonium salts. Examples of the basic compound include the compounds described in paragraph 0300 of WO 2023 / 190064. The contents of the above are incorporated herein by reference. The content of the basic compound in the developer is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, and even more preferably 0.3 to 3% by mass, based on the total mass of the developer.

[0282] When the developer contains an organic solvent, the organic solvent may be a compound described in paragraph

[0387] of WO 2021 / 112189, the contents of which are incorporated herein by reference. Suitable examples of alcohols include methanol, ethanol, propanol, isopropanol, butanol, pentanol, octanol, diethylene glycol, propylene glycol, methyl isobutyl carbinol, and triethylene glycol, and suitable examples of amides include N-methylpyrrolidone, N-ethylpyrrolidone, and dimethylformamide.

[0283] When the developer contains an organic solvent, the organic solvent may be used alone or in combination. In the present invention, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methyl-2-pyrrolidone, and cyclohexanone is particularly preferred, a developer containing at least one selected from the group consisting of cyclopentanone, γ-butyrolactone, and dimethyl sulfoxide is more preferred, and a developer containing cyclopentanone is particularly preferred.

[0284] When the developer contains an organic solvent, the content of the organic solvent relative to the total mass of the developer is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more. Alternatively, the content may be 100% by mass.

[0285] The developer may further contain other components, such as known surfactants and known defoaming agents.

[0286] In the developing step, after the treatment with the developer, the pattern may be further washed (rinsed) with a rinse liquid. Alternatively, a method may be employed in which a rinse liquid is supplied before the developer in contact with the pattern is completely dried.

[0287] [Rinse Liquid] When the developer is an alkaline aqueous solution, for example, water can be used as the rinse liquid. When the developer is a developer containing an organic solvent, for example, a solvent different from the solvent contained in the developer (for example, water, an organic solvent different from the organic solvent contained in the developer) can be used as the rinse liquid.

[0288] When the rinse solution contains an organic solvent, examples of the organic solvent include the same organic solvents as those exemplified when the developer contains an organic solvent. The organic solvent contained in the rinse solution is preferably different from the organic solvent contained in the developer, and more preferably an organic solvent that has a lower solubility for the pattern than the organic solvent contained in the developer.

[0289] When the rinse solution contains an organic solvent, the organic solvent may be used alone or in combination of two or more. The organic solvent is preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, N-methylpyrrolidone, cyclohexanone, PGMEA, or PGME, more preferably cyclopentanone, γ-butyrolactone, dimethyl sulfoxide, PGMEA, or PGME, and even more preferably cyclohexanone or PGMEA.

[0290] When the rinse solution contains an organic solvent, the organic solvent preferably accounts for 50% by mass or more, more preferably 70% by mass or more, and even more preferably 90% by mass or more of the total mass of the rinse solution, and may also account for 100% by mass of the total mass of the rinse solution.

[0291] The rinse liquid may further contain other components, such as known surfactants and known defoaming agents.

[0292] [Method of Supplying Rinse Liquid] The method of supplying the rinse liquid is not particularly limited as long as it can form a desired pattern, and examples thereof include a method of immersing the substrate in the rinse liquid, a method of supplying the rinse liquid to the substrate by puddling, a method of supplying the rinse liquid to the substrate by showering, and a method of continuously supplying the rinse liquid onto the substrate by means of a straight nozzle or the like. From the viewpoints of the permeability of the rinse liquid, the removability of non-image areas, and production efficiency, methods of supplying the rinse liquid using a shower nozzle, straight nozzle, spray nozzle, etc. are available, and a method of continuously supplying using a spray nozzle is preferred, and from the viewpoint of the permeability of the rinse liquid into the image areas, a method of supplying using a spray nozzle is more preferred. The type of nozzle is not particularly limited, and examples include a straight nozzle, shower nozzle, spray nozzle, etc. That is, the rinsing step is preferably a step of supplying or continuously supplying the rinse liquid to the exposed film using a straight nozzle, and more preferably a step of supplying the rinse liquid using a spray nozzle. The method of supplying the rinse liquid in the rinsing step may include a step of continuously supplying the rinse liquid to the substrate, a step of keeping the rinse liquid substantially stationary on the substrate, a step of vibrating the rinse liquid on the substrate by ultrasonic waves or the like, and a combination of these steps.

[0293] The rinsing time is preferably 10 seconds to 10 minutes, more preferably 20 seconds to 5 minutes. The temperature of the rinsing liquid during rinsing is not particularly limited, but is preferably 10 to 45°C, more preferably 18 to 30°C.

[0294] The developing step may include a step of contacting the pattern with a treatment liquid after treatment with a developer or after washing the pattern with a rinse liquid. Alternatively, a method may be employed in which the treatment liquid is supplied before the developer or rinse liquid in contact with the pattern is completely dried.

[0295] <Heating Step> The pattern obtained by the development step (or the pattern after rinsing, if a rinsing step is performed) may be subjected to a heating step in which the pattern obtained by the development step is heated. That is, the method for producing a cured product of the present invention may include a heating step in which the pattern obtained by the development step is heated. Furthermore, the method for producing a cured product of the present invention may include a heating step in which a pattern obtained by another method without performing a development step, or a film obtained by a film formation step, is heated. In the heating step, a resin such as a polyimide precursor is cyclized to form a resin such as a polyimide. Furthermore, crosslinking of unreacted crosslinkable groups in the specific resin or in a crosslinking agent other than the specific resin also proceeds. The heating temperature (maximum heating temperature) in the heating step is preferably 50 to 450°C, more preferably 150 to 350°C, even more preferably 150 to 250°C, even more preferably 160 to 250°C, and particularly preferably 160 to 230°C.

[0296] The heating step is preferably a step in which the cyclization reaction of the polyimide precursor is promoted within the pattern by the action of a base or the like generated from the base generator due to heating.

[0297] With regard to the heating in the heating step, reference can be made to paragraphs

[0326] to

[0332] of WO 2023 / 190064, the contents of which are incorporated herein by reference.

[0298] <Metal Layer Forming Step> The pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step) may be subjected to a metal layer forming step of forming a metal layer on the pattern. That is, the method for producing a cured product of the present invention preferably includes a metal layer forming step of forming a metal layer on the pattern obtained by the developing step (preferably subjected to at least one of a heating step and a post-development exposure step).

[0299] The metal layer is not particularly limited, and existing metal species can be used. Examples include copper, aluminum, nickel, vanadium, titanium, chromium, cobalt, gold, tungsten, tin, silver, and alloys containing these metals. Copper and aluminum are more preferred, and copper is even more preferred.

[0300] The method for forming the metal layer is not particularly limited, and existing methods can be applied. For example, the methods described in JP 2007-157879 A, ​​JP 2001-521288 A, JP 2004-214501 A, JP 2004-101850 A, U.S. Patent No. 7,888,181 B2, and U.S. Patent No. 9,177,926 B2 can be used. Examples of suitable methods include photolithography, PVD (physical vapor deposition), CVD (chemical vapor deposition), lift-off, electroplating, electroless plating, etching, printing, and combinations of these. More specifically, examples include patterning methods that combine sputtering, photolithography, and etching, and patterning methods that combine photolithography and electroplating. Preferred plating methods include electroplating using a copper sulfate or copper cyanide plating solution.

[0301] The thickness of the metal layer is preferably 0.01 to 50 μm, more preferably 1 to 10 μm, at the thickest part.

[0302] <Applications> Fields to which the method for producing a cured product of the present invention or the cured product can be applied include insulating films for electronic devices, interlayer insulating films for rewiring layers, stress buffer films, etc. Other examples include sealing films, substrate materials (base films, coverlays, and interlayer insulating films for flexible printed circuit boards), and the etching of insulating films for packaging applications such as those described above. For these applications, reference can be made to, for example, Science & Technology Co., Ltd.'s "High Performance Polyimide and Application Technology" (April 2008), edited by Masaaki Kakimoto, CMC Technical Library "Fundamentals and Development of Polyimide Materials" (November 2011), and Japan Polyimide and Aromatic Polymer Research Association's "Latest Polyimide Fundamentals and Applications" (NTS, August 2010).

[0303] The method for producing the cured product of the present invention, or the cured product of the present invention, can also be used for producing printing plates such as offset printing plates or screen printing plates, for etching molded parts, for producing protective lacquers and dielectric layers in electronics, especially microelectronics, etc.

[0304] (Laminate and method for manufacturing laminate) The laminate of the present invention refers to a structure having a plurality of layers each made of the cured product of the present invention. The laminate is a laminate including two or more layers each made of the cured product, and may be a laminate including three or more layers. At least one of the two or more layers each made of the cured product contained in the laminate is a layer made of the cured product of the present invention, and from the viewpoint of suppressing shrinkage of the cured product or deformation of the cured product associated with the shrinkage, it is also preferable that all of the layers made of the cured product contained in the laminate are layers made of the cured product of the present invention.

[0305] That is, the method for producing a laminate of the present invention preferably includes the method for producing a cured product of the present invention, and more preferably includes repeating the method for producing a cured product of the present invention multiple times.

[0306] The laminate of the present invention preferably includes two or more layers made of a cured product and a metal layer between any of the layers made of the cured product. The metal layer is preferably formed by the metal layer-forming step. That is, the method for producing a laminate of the present invention preferably further includes a metal layer-forming step of forming a metal layer on a layer made of a cured product between multiple cured product production processes. A preferred embodiment of the metal layer-forming step is as described above. Examples of the laminate include a laminate having at least a layer structure in which three layers are stacked in this order: a layer made of a first cured product, a metal layer, and a layer made of a second cured product. It is preferred that both the layer made of the first cured product and the layer made of the second cured product are layers made of the cured product of the present invention. The resin composition of the present invention used to form the layer made of the first cured product and the resin composition of the present invention used to form the layer made of the second cured product may have the same composition or different compositions. The metal layer in the laminate of the present invention is preferably used as metal wiring, such as a rewiring layer.

[0307] <Lamination Step> The method for producing a laminate of the present invention preferably includes a lamination step. The lamination step is a series of steps including performing at least one of (a) a film-forming step (layer-forming step), (b) an exposure step, (c) a development step, and (d) a heating step and a post-development exposure step again on the surface of the pattern (resin layer) or the metal layer in this order. However, at least one of (a) the film-forming step and (d) the heating step and the post-development exposure step may be repeated. Furthermore, after at least one of (d) the heating step and the post-development exposure step, (e) a metal layer-forming step may be included. It goes without saying that the lamination step may further include the above-mentioned drying step or the like as appropriate.

[0308] When a further lamination step is performed after the lamination step, a surface activation treatment step may be further performed after the exposure step, the heating step, or the metal layer forming step. An example of the surface activation treatment is a plasma treatment. Details of the surface activation treatment will be described later.

[0309] The lamination step is preferably performed 2 to 20 times, more preferably 2 to 9 times. For example, a structure having 2 to 20 resin layers, such as resin layer / metal layer / resin layer / metal layer / resin layer / metal layer, is preferred, and a structure having 2 to 9 resin layers is even more preferred. Each of the layers may be the same or different in composition, shape, film thickness, etc.

[0310] In the present invention, a particularly preferred embodiment is one in which, after providing a metal layer, a cured product (resin layer) of the resin composition of the present invention is further formed so as to cover the metal layer.Specific examples include an embodiment in which the steps of (a) film formation step, (b) exposure step, (c) development step, (d) at least one of a heating step and a post-development exposure step, and (e) metal layer formation step are repeated in this order, or an embodiment in which the steps of (a) film formation step, (d) at least one of a heating step and a post-development exposure step, and (e) metal layer formation step are repeated in this order.By alternately performing the lamination step of laminating the resin composition layer (resin layer) of the present invention and the metal layer formation step, the resin composition layer (resin layer) of the present invention and the metal layer can be alternately laminated.

[0311] (Surface Activation Treatment Step) The method for producing a laminate of the present invention preferably includes a surface activation treatment step in which at least a portion of the metal layer and the resin composition layer are surface-activated. The surface activation treatment step is usually performed after the metal layer formation step, but after the development step (preferably after at least one of the heating step and the post-development exposure step), the resin composition layer may be subjected to the surface activation treatment step before the metal layer formation step. The surface activation treatment may be performed only on at least a portion of the metal layer, or only on at least a portion of the resin composition layer after exposure, or may be performed on at least a portion of both the metal layer and the resin composition layer after exposure. The surface activation treatment is preferably performed on at least a portion of the metal layer, and it is preferable to perform the surface activation treatment on part or all of the region of the metal layer on which the resin composition layer is to be formed. In this way, by performing the surface activation treatment on the surface of the metal layer, the adhesion with the resin composition layer (film) provided on the surface can be improved. The surface activation treatment is also preferably performed on part or all of the resin composition layer (resin layer) after exposure. In this way, by performing the surface activation treatment on the surface of the resin composition layer, the adhesion with the metal layer or resin layer provided on the surface that has been surface-activated can be improved. In particular, when negative development is performed, when the resin composition layer is cured, it is less susceptible to damage due to surface treatment and adhesion is likely to be improved. The surface activation treatment can be carried out, for example, by the method described in paragraph 0415 of International Publication No. 2021 / 112189. The contents of this specification are incorporated herein.

[0312] (Semiconductor device and manufacturing method thereof) The present invention also discloses a semiconductor device comprising the cured product or laminate of the present invention. The present invention also discloses a manufacturing method for a semiconductor device comprising the manufacturing method for the cured product or the manufacturing method for the laminate of the present invention. Specific examples of semiconductor devices using the resin composition of the present invention to form an interlayer insulating film for a rewiring layer can be found in paragraphs 0213 to 0218 and FIG. 1 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0313] The present invention will be explained in more detail below with reference to examples. The materials, amounts used, ratios, processing details, processing procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "parts" and "%" are based on mass.

[0314] <Polymer Synthesis> [Synthesis Example P-1: Synthesis of Resin (P-1)] 93.07 g of 4,4'-oxydiphthalic dianhydride (ODPA) and 62.04 g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) were placed in a separable flask, and 134.0 g of 2-hydroxyethyl methacrylate (HEMA) and 400 mL of γ-butyrolactone were added. 79.1 g of pyridine was added with stirring at room temperature to obtain a reaction mixture. After the heat generated by the reaction had ceased, the mixture was allowed to cool to room temperature and allowed to stand for an additional 16 hours. Next, a solution of 206.3 g of dicyclohexylcarbodiimide (DCC) dissolved in 180 mL of γ-butyrolactone was added to the reaction mixture over 40 minutes with stirring under ice cooling. Subsequently, a suspension prepared by suspending 96.0 g of 4,4'-diaminodiphenyl ether in 350 ml of γ-butyrolactone was added over 60 minutes with stirring. After further stirring at room temperature for 2 hours, 30 mL of ethyl alcohol was added and stirred for 1 hour. Then, 400 ml of γ-butyrolactone was added. The precipitate formed in the reaction mixture was collected by filtration to obtain a reaction solution. The resulting reaction solution was added to 3 L of ethyl alcohol to produce a precipitate consisting of a crude polymer. The produced crude polymer was collected by filtration and dissolved in 1.5 L of tetrahydrofuran to obtain a crude polymer solution. The obtained crude polymer solution was added dropwise to 28 L of water to precipitate the polymer, and the resulting precipitate was collected by filtration and vacuum dried to obtain powdered resin P-1. Resin P-1 has a structure containing a repeating unit represented by the following formula (P-1): １ The weight average molecular weight, imidization rate, esterification rate, and amine value of Resin P-1 were confirmed by H-NMR. The symbols A and B in parentheses represent the molar ratios of the respective structures, and the values ​​are shown in the tables below.

[0315]

[0316] [Synthesis Examples P-2 to P-52: Synthesis of Resins (P-2) to (P-52)] Resins (P-2) to (P-52) were synthesized in the same manner as for Resin (P-1), except that the types and charging ratios of the raw materials, acid anhydride and diamine, used in Synthesis Example P-1 were appropriately changed. In addition, in the synthesis of Resin (P-3), dicyclohexylcarbodiimide (DCC) was replaced with diisopropylcarbodiimide. Resins (P-2) to (P-52) are resins having repeating units represented by the following formulas (P-2) to (P-52), respectively. In the structures below, the symbols in parentheses are the values ​​listed in the table below and represent the molar ratio of each structure. The structure of each repeating unit is １ The weight average molecular weight (Mw), imidization rate, esterification rate, acid value, and amine value of these resins are shown in the table below. Resins having the same structure but different Mw, imidization rate, esterification rate, acid value, amine value, and specific structure content were obtained by appropriately changing the amounts of raw materials used, the reaction temperature, and the reaction time.

[0317] [Method for measuring weight-average molecular weight] The weight-average molecular weight of the resin was measured by the following method. GPC measurement was performed using a high-speed GPC apparatus HLC-8420GPC (manufactured by Tosoh Corporation) with a TSK guard column, Super AW-H (4.6 mm × 35 mm), and two TSKgel Super AWM-H (4.6 mm × 150 mm) columns connected in series. A 0.01 mol / L solution of lithium bromide in NMP (N-methyl-2-pyrrolidone) was used as the eluent.

[0318] [Method for measuring imidization rate] The imidization rate of the resin was measured by the following method. The resin was dissolved in γ-butyrolactone, diluted to 2,000 mPa s, and applied to a silicon wafer by spin coating to form a resin layer. The silicon wafer to which the obtained resin layer was applied was dried on a hot plate at 110°C for 5 minutes, obtaining a resin layer with a uniform thickness of approximately 15 μm after film formation on the silicon wafer. The resin layer was measured by the ATR method using a NicoletiS20 (manufactured by Thermofisher) in a measurement range of 4,000 to 700 cm. －１ The measurement was carried out 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) is set to 1500 cm －１ Around (1460-1550 cm －１ The imidization index B was calculated in the same manner for a film that was heated at a heating rate of 10°C / min in a nitrogen atmosphere and heated at 350°C for 1 hour, and the imidization rate of the resin was calculated by dividing the imidization index A by the imidization index B.

[0319] [Method for determining the esterification rate] The esterification rate of the resin used in each example or comparative example was measured by the following method: 0.09 g of the resin was dissolved in 0.9 g of DMSO-d6 (dimethyl sulfoxide-d6), １H-NMR (Avance III HD manufactured by Bruker) was measured. The content of amic acid ester structures (esterification rate) relative to the total molar amount of amic acid structures and amic acid ester structures in the resin was calculated from the ratio of the signal integral values ​​of the signal derived from the carboxylic acid and the signal derived from the ester structure.

[0320] [Method for Determining Acid Value] The acid value of the resin used in each Example or Comparative Example was measured by the following method. 0.30 g of resin was dissolved in 80 mL of NMP, and 5 mL of water was added to prepare a measurement solution. The solution was titrated with a 0.01 N (0.01 mol / L) aqueous potassium hydroxide (KOH) solution, and the acid value was calculated from the peak in the pH range of 7.0 to 12.0. The measurement results for each resin are shown in the "Acid value (mmol / g)" column in the table.

[0321] [Method for quantification of amine value] The amine value of the resin used in each example or comparative example was measured by the following method. 0.60 g of resin was dissolved in 50 mL of diglyme, and 10 mL of acetic acid was added to prepare a measurement solution. The solution was titrated with a 0.01 N (0.01 mol / L) solution of perchloric acid in acetic acid to detect the neutralization point, thereby measuring the amine value of the resin. The measurement results for each resin are listed in the "Amine value (mmol / g)" column in the table.

[0322] [Quantitative Method for Specific Structure Content] The content of the specific structure represented by formula (1) in the resin composition was measured by the following method. １ The content of the specific structure contained in the resin was quantified by H-NMR analysis. For each component listed in Table 2, the total amount of components other than the solvent was defined as the total solid content, and it was assumed that the specific structure was contained only in the resin component. The content of the specific structure in the total solid content was calculated from the relationship between the content of the specific structure in the resin quantified above and the content of the resin in the total solid content. The measurement results are shown in the "Specific structure content (mmol / g)" column in the table.

[0323]

[0324]

[0325] Examples and Comparative Examples The resin compositions used in the examples and comparative examples were each obtained by mixing the components listed in Table 2 below. Specifically, the content of each component listed in Table 2 was the amount (parts by mass) listed in the "parts by mass" column of each column in the table. The obtained resin compositions and comparative compositions were pressure-filtered using a polytetrafluoroethylene filter with a pore size of 0.8 μm. In Table 2, the notation "-" indicates that the composition did not contain the corresponding component. The evaluation results for each resin composition were as shown in Table 3.

[0326]

[0327]

[0328]

[0329]

[0330]

[0331]

[0332]

[0333]

[0334]

[0335] [Resins] P-1 to P-52: Resins (P-1) to (P-52) synthesized above

[0336] [Aniline compounds] B-1: N-phenyldiethanolamine B-2: Compound having the following structure B-3: Compound having the following structure

[0337] [Polymerizable compounds] C-1: NK Ester 4G (manufactured by Shin-Nakamura Chemical Co., Ltd.) C-2: NK Ester TMPT (manufactured by Shin-Nakamura Chemical Co., Ltd.) C-3: Dipentaerythritol hexaacrylate (manufactured by TCI) C-4: Compound having the following structure C-5: Compound having the following structure

[0338] [Photopolymerization initiator] D-1: Compound having the following structure D-2: IRGACURE OXE 01 (manufactured by BASF) D-3: Compound having the following structure D-4: Compound having the following structure

[0339] [Sensitizer] E-1: Compound having the following structure E-2: Compound having the following structure

[0340] [Antioxidants] F-1: Compound having the following structure F-2: Compound having the following structure F-3: Compound having the following structure F-4: Compound having the following structure

[0341] [Metal adhesion improver] G-1: Compound having the following structure G-2: Compound having the following structure

[0342] [Nitrogen-containing heterocyclic compounds] H-1: Compound having the following structure H-2: Compound having the following structure H-3: Compound having the following structure H-4: Compound having the following structure

[0343] [Metal Complexes] I-1: Compounds having the following structures (iPr represents an isopropyl group) I-2: Compounds having the following structures

[0344] [Thermal base generator] J-1: Compound having the following structure J-2: Compound having the following structure J-3: Compound having the following structure

[0345] [Urea compounds] U-1: 1,3-dicyclohexylurea U-2: 1,3-diisopropylurea

[0346] [Solvents] L-1: γ-valerolactone, L-2: ethyl lactate, L-3: dimethyl sulfoxide, L-4: γ-butyrolactone, L-5: N-methyl-2-pyrrolidone, L-6: 3-methoxy-N,N-dimethylpropanamide, L-7: 3-butoxy-N,N-dimethylpropanamide

[0347] <Evaluation> [Linewidth Uniformity in Wafer Plane] First, the optimum exposure dose of the resin composition or comparative composition prepared in each Example or Comparative Example was determined by the following method. The resin composition was applied by spin coating onto a silicon wafer having a thin copper layer formed on its surface, and dried at 110°C for 5 minutes to form a resin composition layer having a thickness of 7 μm after film formation. The obtained resin composition layer was then irradiated with 100 to 1500 mJ / cm using an i-line stepper (Canon: FPA-3000i5, NA=0.5, σ=0.7) using a square via mask having a 7 μm pattern formed thereon. ２ in the range of 50 mJ / cm ２ The film was exposed to each exposure dose at intervals of 100 μm. Subsequently, the film was developed with cyclopentanone until the unexposed areas were removed, rinsed with PGMEA for 30 seconds, and then heated at a temperature increase rate of 10°C / min in a nitrogen atmosphere and heated at 230°C for 1 hour. The via width at each exposure dose was measured for the resulting pattern using a length-measuring scanning electron microscope (SEM: Scanning Electron Microscope (S-9380II, manufactured by Hitachi High-Technologies Corporation) to determine the exposure dose at which the via width became 7 μm. This was used as the optimum exposure dose (mJ / cm) for each composition. ２) was used. Next, evaluation of line width stability was carried out as follows. A resin composition was applied by spin coating onto a silicon wafer having a thin copper layer formed on its surface, and dried at 110°C for 5 minutes to form a resin composition layer having a film thickness of 7 μm after film formation. The obtained resin composition layer was then exposed to light using an i-line stepper (Canon: FPA-3000i5, NA = 0.5, σ = 0.7) with a square via mask having a 7 μm pattern formed thereon, at the optimum exposure dose for each composition determined by the above-mentioned method for the entire wafer. Subsequently, the wafer was developed with cyclopentanone until the unexposed areas were removed, rinsed with PGMEA for 30 seconds, and further heated at a heating rate of 10°C / min under a nitrogen atmosphere and heated at 230°C for 1 hour. For the obtained pattern, the via width was measured at any 100 points on the wafer surface using a length measurement scanning electron microscope (SEM: Scanning Electron Microscope (S-9380II manufactured by Hitachi High-Technologies Corporation) and the standard deviation was calculated and evaluated according to the following evaluation criteria. The evaluation results are shown in the column for "Line width uniformity" in the table. The smaller the standard deviation, the less susceptible to minor environmental differences on the wafer surface and the higher the suitability for mass production. A: Standard deviation less than 0.05 μm B: Standard deviation 0.05 μm or more but less than 0.10 C: Standard deviation 0.10 μm or more but less than 0.20 D: Standard deviation 0.20 μm or more

[0348] [Evaluation of Resolution] The resin composition or comparative composition prepared in each Example or Comparative Example was applied in the form of a layer by spin coating to the surface of the thin copper layer of a resin substrate having a thin copper layer formed on its surface, and dried at 110°C for 5 minutes to form a resin composition layer having a thickness of 4 μm after film formation. The obtained resin composition layer was then subjected to a spin coating of 100 to 1500 mJ / cm using an i-line stepper (Canon: FPA-3000i5, NA=0.5, σ=0.7) using a square via mask having a pattern formed in 0.5 μm increments from 0.5 to 10 μm. ２ in the range of 50 mJ / cm ２The film was exposed at each exposure dose in increments. Subsequently, the film was developed with cyclopentanone until the unexposed areas were removed, rinsed with PGMEA for 30 seconds, and then heated at a temperature increase rate of 10°C / min under a nitrogen atmosphere and heated at 230°C for 1 hour. The minimum opening mask diameter of the obtained cured product was determined by observing the cross section of the opening pattern portion with a scanning microscope S-4800 (manufactured by Hitachi High-Technologies Corporation) and evaluated according to the following evaluation criteria. The minimum opening mask diameter was defined as the smallest mask diameter among the mask diameters on which an opening pattern was formed with at least one of the above exposure doses. In addition, the minimum opening mask diameter was 800 mJ / cm. ２ The residual film ratio (%, film thickness after development / film thickness before development x 100) was calculated from the film thickness before and after development when exposed to light at 100°C. A residual film ratio of less than 80% is undesirable for forming a rewiring layer, regardless of the aperture mask size. The evaluation results are shown in the "Resolution" column in the table. (Evaluation Criteria) A: The minimum aperture mask diameter was 3 μm or less, and the residual film ratio after development was 90% or more. B: The minimum aperture mask diameter was more than 3 μm and less than 4 μm, and the residual film ratio after development was 90% or more. C: The minimum aperture mask diameter was more than 4 μm and less than 5 μm, and the residual film ratio after development was 90% or more. D: The minimum aperture mask diameter was more than 5 μm, or the residual film ratio after development was less than 80%.

[0349] [Chemical Resistance] The resin composition or comparative composition prepared in each Example or Comparative Example was applied to a silicon wafer by spin coating in the form of a layer, and dried at 110°C for 5 minutes to form a resin composition layer having a film thickness of 15 µm. Next, the resin composition layer was exposed to 800 mJ / cm using a broadband exposure machine (UX-1000SN-EH01 manufactured by Ushio Inc.). ２ Then, a clean oven (manufactured by Koyo, CLH-21) was used to expose the entire surface. ２The film was then heated at 230°C for 1 hour under atmospheric pressure to obtain a cured film of the resin composition or comparative composition. The resulting cured film was immersed in the following chemicals under the following immersion conditions, and the residual film rate (film rate after immersion / film rate before immersion x 100 (%)) was calculated from the film thickness before and after immersion. Evaluation was performed according to the following evaluation criteria, and the evaluation results are recorded in the "Chemical Resistance" column. The higher the residual film rate, the better the chemical resistance. Chemical: 90:10 mixture of dimethyl sulfoxide (DMSO) and 2.38% by mass aqueous solution of tetramethylammonium hydroxide (TMAH). Immersion conditions: 60°C for 30 minutes. Evaluation criteria: A: The residual film rate was 95% or more. B: The residual film rate was 80% or more but less than 95%.

[0350] [Film Formability] The resin composition or comparative composition prepared in each Example or Comparative Example was applied to a silicon wafer by spin coating at 3000 rpm in an environment of 23°C temperature and 50% humidity, and the film surface was visually observed immediately after spin coating and after being left to stand for 5 minutes after spin coating, and evaluated according to the following evaluation criteria. The evaluation results are shown in the "Film Formability" column in the table. -Evaluation Criteria- A: No clouding of the film was observed immediately after spin coating or after being left to stand. B: No clouding of the film was observed immediately after spin coating, but clouding of the film was observed after being left to stand.

[0351] [Storage stability] The resin compositions or comparative compositions prepared in each example or comparative example were stored in a constant temperature bath at 23°C for 168 hours, and the occurrence of precipitation and the rate of viscosity change = |((viscosity after storage / viscosity before storage) x 100)| were evaluated according to the following evaluation criteria. Viscosity measurements were carried out at 23°C using a TV-100E viscometer (manufactured by Toki Sangyo Co., Ltd.). The evaluation results are shown in the "Storage stability" column in the table. (Evaluation criteria) A: The rate of viscosity change was less than 2%, and no precipitation was observed. B: The rate of viscosity change was 2% or more and less than 5%, and no precipitation was observed. C: The rate of viscosity change was 5% or more and less than 10%, and no precipitation was observed.

[0352] The above results show that the use of the resin composition according to the present invention results in excellent line width uniformity within the wafer surface. In contrast, when the resin does not have a specific structure, when the acid value of the resin is outside the specified range, or when the acid value of the resin is outside the specified range, the line width uniformity within the wafer surface is significantly poor.

[0353] Furthermore, by using the resin composition according to the present invention, a cured film excellent in resolution, chemical resistance, film-forming properties, and storage stability was obtained.

Claims

1. A resin composition comprising a resin A and a photosensitizer B, wherein the resin A comprises an amic acid ester structure and an amic acid structure, and further comprises at least one structure selected from the group consisting of structures represented by formula (AY1) and structures represented by formula (DY1), the molar amount of the amic acid ester structure relative to the total molar amount of the amic acid structure and the amic acid ester structure in the resin A is 90.00 to 99.90%, and the amine value of the resin A is 0.0010 to 0.3000 mmol / g; In the formula, * represents a bonding site to another structure, X is a group represented by formula (2a), and in formula (2a), *1 to *4 each represent a bonding site to a carbonyl group, Y is any group selected from the following:

2. The resin composition according to claim 1, which contains a nitrogen-containing heterocyclic compound.

3. The resin composition according to claim 1, wherein the resin composition comprises a structure represented by formula (1): In formula (1), R １ and R ２ each independently represents a saturated aliphatic hydrocarbon group having 3 to 6 carbon atoms or a phenyl group which may be substituted with an alkyl group having 1 to 10 carbon atoms; X １ represents an oxygen atom or a sulfur atom, L １ is -C(=O)- or -S(=O) ２ represents - and * １ and * ２ each independently represents a bonding site to another structure, R １ , R ２ , * １ and * ２ at least two of the structures bonded to the formula (1) may be bonded to form a ring structure, and the molar amount of the structure represented by formula (1) relative to the total solid content of the resin composition is 0.005 to 0.5 mmol / g.

4. The resin composition according to claim 1, wherein resin A contains a structure represented by formula (1-dp-2d1); In the formula, * indicates a bonding site with another structure.

5. The resin composition according to claim 4, wherein resin A contains at least one structure selected from the group consisting of a structure represented by formula (1-dp-V1-1) and a structure represented by formula (Y-V1-1). In the formula, * indicates a bonding site with another structure.

6. The resin composition according to any one of claims 1 to 5, wherein resin A contains an imide ring structure and the imidization rate of resin A is 3 to 40%.

7. The resin composition according to any one of claims 1 to 5, wherein the weight average molecular weight of resin A is 15,000 to 40,000.

8. The resin composition according to any one of claims 1 to 5, wherein the acid value of the acid group contained in resin A, whose neutralization point has a pH in the range of 7.0 to 12.0, is in the range of 0.0010 to 0.3000 mmol / g.

9. The resin composition according to any one of claims 1 to 5, further comprising a titanium complex compound.

10. The resin composition according to any one of claims 1 to 5, wherein photosensitizer B contains an oxime compound.

11. The resin composition according to any one of claims 1 to 5, further comprising an antioxidant.

12. The resin composition according to any one of claims 1 to 5, further comprising an aniline compound.

13. The resin composition according to any one of claims 1 to 5, further comprising a urea compound.

14. The resin composition according to any one of claims 1 to 5, which is used to form an interlayer insulating film for a rewiring layer.

15. A cured product obtained by curing the resin composition according to any one of claims 1 to 5.

16. A laminate comprising two or more layers of the cured product according to claim 15, and including a metal layer between any of the layers of the cured product.

17. A method for producing a cured product, comprising a film-forming step of applying the resin composition according to any one of claims 1 to 4 onto a substrate to form a film.

18. The method for producing a cured product according to claim 17, comprising an exposure step of selectively exposing the film to light and a development step of developing the film with a developer to form a pattern.

19. The method for producing the cured product according to claim 17, further comprising a heating step of heating the film at 50 to 450°C.

20. A method for producing a laminate, comprising the method for producing a cured product according to claim 17.

21. A method for manufacturing a semiconductor device, comprising the method for manufacturing a cured product according to claim 17.

22. A semiconductor device comprising the cured product of claim 15.

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