Method for fabricating semiconductor device, bonding material and carrier used in method for fabricating semiconductor device, and semiconductor device

Abstract

The present invention discloses a method for fabricating semiconductor device with a low-profile heat dissipation structure. The method is particularly applicable to fan-out packaging and 2D packaging (2.1D packaging and 2.3D packaging). In this method, a carrier 100 having a glass substrate 101 and a metal film 102 separable from the glass substrate 101, and a semiconductor chip 30 having connection terminals 33 are prepared. The semiconductor chip 30 is attached to the metal film 102 by interposing a thermally conductive bonding material 20 between the carrier 100 and the back surface of the semiconductor chip 30. The semiconductor chip 30 is encapsulated using an encapsulant. Thereafter, the glass substrate 101 is separated from the metal film 102. This causes the metal film 102 to function as a heat spreader. Note that, for example, a metal paste, a DAF, an ACF, an NCF, or an NCP can be used as the bonding material 20 to attach the semiconductor chip 30 to the metal film 102.

Description

Semiconductor device manufacturing method, bonding material and carrier used in the semiconductor device manufacturing method, and semiconductor device

[0001] The present disclosure relates to a method for manufacturing a semiconductor device, a bonding material and a carrier used in the method for manufacturing a semiconductor device, and a semiconductor device.

[0002] Patent Document 1 discloses a semiconductor device in which a heat spreader, which is a heat dissipation structure, is attached to the top surface of a semiconductor package (semiconductor chip) using a thermally conductive material, TIM (Thermal Interface Material). In such a semiconductor device, heat generated in the semiconductor chip is dissipated by the heat spreader.

[0003] Japanese Patent Application Laid-Open No. 2020-205340

[0004] Heat spreaders in conventional semiconductor devices are plate-shaped members having a predetermined thickness, for example, approximately 1.0 mm to 4.5 mm. However, there is a demand for thinner semiconductor devices with heat dissipation structures. In particular, there is a demand for thinner semiconductor devices in FanOut mounting and 2D mounting (e.g., 2.1D mounting and 2.3D mounting).

[0005] The present disclosure relates to a method for manufacturing a semiconductor device having a thin heat dissipation structure, and the semiconductor device. The present disclosure also relates to a bonding material and a carrier used in the method for manufacturing a semiconductor device having a thin heat dissipation structure.

[0006] [1] One aspect of the present disclosure relates to a method for manufacturing a semiconductor device, the method comprising the steps of: preparing a carrier having a base and a heat dissipation film separable from the base; preparing at least one semiconductor chip having a first surface, an opposite second surface, and connection terminals provided on the first surface; attaching the semiconductor chip to the heat dissipation film by interposing a thermally conductive bonding material between the carrier and the second surface of the semiconductor chip; encapsulating the at least one semiconductor chip with an encapsulant; and separating the base from the heat dissipation film.

[0007] In this semiconductor device manufacturing method, a semiconductor chip is mounted on a carrier having a heat dissipation film that can be separated from the substrate, and then the substrate is separated from the heat dissipation film, and the remaining heat dissipation film serves as the heat dissipation structure. In this case, by using a thin member such as the heat dissipation film as the heat dissipation structure, a semiconductor device with a thin heat dissipation structure can be obtained. Furthermore, because the heat dissipation film, which is a thin member, is initially used as part of the carrier in each manufacturing process, a semiconductor device with a thin heat dissipation structure can be easily manufactured.

[0008] [2] In the method for manufacturing a semiconductor device according to [1] above, the bonding material preferably has a thermal conductivity of 1 W / m K or more. In this case, in the semiconductor device, heat generated from the semiconductor chip can be efficiently transferred to the heat dissipation film, which is a heat dissipation structure.

[0009] [3] In the method for manufacturing a semiconductor device according to the above [1] or [2], the bonding material may be a metal paste. In this case, heat generated from the semiconductor chip can be efficiently transferred to the heat dissipation film, which is a heat dissipation structure, in the semiconductor device.

[0010] [4] In the method for manufacturing a semiconductor device according to the above [1] or [2], the bonding material may be a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP). In this case, the semiconductor chip can be reliably fixed to the heat dissipation film in the semiconductor device.

[0011] [5] In the method for manufacturing a semiconductor device according to any one of the above [1] to [4], the heat dissipation film preferably has a larger area in a planar direction than the bonding material. In this case, the heat dissipation performance of the semiconductor device can be improved.

[0012] [6] In the method for manufacturing a semiconductor device according to any one of the above [1] to [5], the thickness of the heat dissipation film is preferably 5 μm or more. In this case, the heat dissipation film can reliably function as a heat dissipation structure in the semiconductor device.

[0013] [7] In the method for manufacturing a semiconductor device according to any one of the above [1] to [6], the thickness of the heat dissipation film may be 100 μm or less. In this case, the semiconductor device to be manufactured can be made thinner.

[0014] [8] In the method for manufacturing a semiconductor device according to any one of [1] to [7] above, the surface roughness Ra of the outer surface of the heat dissipation film may be 1 μm or more. In this case, the outer surface area of ​​the heat dissipation film, which is a heat dissipation structure, is increased, thereby improving the heat dissipation capacity.

[0015] [9] In the method for manufacturing a semiconductor device according to any one of [1] to [8] above, in the step of separating the base material from the heat dissipation film, the outer surface of the heat dissipation film may be roughened after separating the base material from the heat dissipation film. In this case, the outer surface area of ​​the heat dissipation film, which is a heat dissipation structure, is increased, thereby improving the heat dissipation capacity.

[0016]

[10] The method for manufacturing a semiconductor device according to any one of [1] to [9] above may further include, after the sealing step, a step of grinding the sealing material to expose the connection terminals of the semiconductor chip, and a step of forming a redistribution layer on the exposed connection terminals. In this case, a thin heat dissipation structure can be provided, and the redistribution layer connected to the connection terminals of the semiconductor chip can be easily formed.

[0017]

[11] In the method for manufacturing a semiconductor device according to any one of [1] to

[10] above, the at least one semiconductor chip may include a first semiconductor chip and a second semiconductor chip, and in the attaching step, the first semiconductor chip and the second semiconductor chip may be attached to the heat dissipation film by interposing a bonding material between the carrier and each of the second surfaces of the first semiconductor chip and the second semiconductor chip, and in the sealing step, the first semiconductor chip and the second semiconductor chip may be sealed using a sealing material. In this case, a thin heat dissipation structure can be provided for a semiconductor device having a structure such as FanOut packaging or 2D packaging (e.g., 2.1D packaging or 2.3D packaging).

[0018]

[12] The method for manufacturing a semiconductor device according to

[11] above may further include a step of arranging a bridge chip that connects the first connection terminals of the first semiconductor chip and the second connection terminals of the second semiconductor chip. In this case, the bridge chip that connects both semiconductor chips can be easily provided in the semiconductor device.

[0019]

[13] The method for manufacturing a semiconductor device according to

[12] may further include, after the sealing step, a step of grinding the sealing material to expose the first connection terminals of the first semiconductor chip and the second connection terminals of the second semiconductor chip, and a step of forming a rewiring layer on the exposed first connection terminals and second connection terminals. In this manufacturing method, in the step of arranging the bridge chip, the first connection terminals and the second connection terminals may be connected via at least a part of the rewiring layer and the bridge chip.

[0020]

[14] The semiconductor device manufacturing method according to

[12] or

[13] above may further include a step of grinding the bridge chip. In this case, the bridge chip can be made thinner, thereby enabling a semiconductor device provided with the bridge chip to be made thinner. Furthermore, when multiple posts for connecting the redistribution layer and the external electrodes are provided next to the bridge chip, the height of each post can be reduced and the diameter of each post can be made smaller. This allows for an improved post placement density.

[0021]

[15] The method for manufacturing a semiconductor device according to any one of

[12] to

[14] above may further include a step of sealing the bridge chip with another sealing body, and the bridge chip may be ground together with the other sealing material when the other sealing material is ground. In this case, grinding of the bridge chip can be performed reliably.

[0022]

[16] In another aspect, the present disclosure relates to a bonding material used in a method for manufacturing a semiconductor device. The bonding material is used in any one of the methods for manufacturing a semiconductor device described above in [1] to

[15] , and has a thermal conductivity of 1 W / m·K or more. This can improve the heat dissipation performance of the semiconductor device manufactured.

[0023]

[17] The bonding material of

[16] above may be a metal paste, a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP).

[0024]

[18] In yet another aspect, the present disclosure relates to a carrier used in a method for manufacturing a semiconductor device. The carrier is used in any one of the methods for manufacturing a semiconductor device described above in [1] to

[15] , and includes a base material and a heat dissipation film disposed on a first surface of the base material. The base material is detachably attached to the heat dissipation film. In this case, a semiconductor device having a thin heat dissipation structure can be easily manufactured.

[0025]

[19] In the carrier of

[18] above, the substrate may be made of a glass material. When thermal history occurs during the manufacture of a semiconductor device, this configuration can prevent loss of dimensional accuracy. The substrate may also be made of a material that is UV-transparent. In this case, the substrate may be bonded to the heat dissipation film using a material that is UV-releasable.

[0026]

[20] The carrier of

[18] or

[19] above may further include a resin layer disposed on either the first surface or the opposite second surface of the substrate. In this case, even if the substrate of the carrier is made of a fragile material such as glass, the resin layer can prevent the substrate from cracking during the manufacture of the semiconductor device.

[0027]

[21] In the carrier of any one of

[18] to

[20] above, the heat dissipation film may have a thickness of 5 μm or more. In this case, a semiconductor device in which the heat dissipation film reliably functions as a heat dissipation structure can be easily manufactured.

[0028]

[22] In yet another aspect, the present disclosure relates to a semiconductor device. The semiconductor device includes at least one semiconductor chip having a first surface, an opposite second surface, and connection terminals provided on the first surface, a wiring layer connected to the connection terminals, and a heat dissipation film attached to the second surface of the semiconductor chip with a bonding material. In this semiconductor device, the heat dissipation film is a heat dissipation structure. In this case, the semiconductor device can have a thin heat dissipation structure.

[0029]

[25] In the semiconductor device of

[24] above, the bonding material may be a metal paste, a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP) having a thermal conductivity of 1 W / m·K or more, and the heat dissipation film may have a thickness of 5 μm or more and 100 μm or less, and may have an area in the planar direction larger than that of the bonding material.

[0030] According to the present disclosure, a semiconductor device having a thin heat dissipation structure can be obtained.

[0031] FIG. 1 is a cross-sectional view schematically illustrating an example of a semiconductor device manufactured by the semiconductor device manufacturing method according to the first embodiment. FIGS. 2A to 2C are cross-sectional views schematically illustrating a method for manufacturing the semiconductor device shown in FIG. 1 in sequence. FIGS. 3A to 3C are cross-sectional views schematically illustrating a method for manufacturing the semiconductor device shown in FIG. 1 in sequence. FIGS. 4A to 4C are cross-sectional views schematically illustrating a method for manufacturing a semiconductor device according to a second embodiment. FIGS. 5A to 5C are cross-sectional views schematically illustrating a method for manufacturing a semiconductor device according to the second embodiment in sequence. FIGS. 6A to 6C are cross-sectional views schematically illustrating a method for manufacturing a semiconductor device according to the second embodiment in sequence. FIG. 7 is a cross-sectional view illustrating a method for mounting a semiconductor device manufactured by the manufacturing method shown in FIGS. 4 to 6 on a substrate. FIG. 8 is a cross-sectional view illustrating a modified example of a carrier used in the semiconductor device manufacturing method.

[0032] Hereinafter, several embodiments of the present disclosure will be described in detail, with reference to the drawings as necessary. In the following description, identical or equivalent parts will be designated by the same reference numerals, and duplicate explanations will be omitted. Furthermore, positional relationships such as up, down, left, and right will be based on the positional relationships shown in the drawings unless otherwise specified. When terms such as "left," "right," "front," "back," "top," "bottom," "upper," and "lower" are used in the description and claims of this specification, these are intended for explanatory purposes and do not necessarily mean that these relative positions will always be the same. Furthermore, the dimensional ratios of the drawings are not limited to those shown in the drawings.

[0033] In this specification, the term "layer" or "film" encompasses not only a structure with a shape formed over the entire surface when observed in a plan view, but also a structure with a shape formed on a portion of the surface. In this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved. A numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively.

[0034] 1 is a cross-sectional view schematically illustrating an example of a semiconductor device manufactured by a semiconductor device manufacturing method according to the first embodiment. As shown in FIG. 1, the semiconductor device 1 includes a heat dissipation structure 10 (heat dissipation film), a bonding material 20, a semiconductor chip 30, a sealing body 40, a redistribution layer 50, and a plurality of external electrodes 60.

[0035] The heat dissipation structure 10 is a part of the semiconductor device 1 that functions as a heat spreader and is formed, for example, from a metal film or metal foil such as copper or silver. The heat dissipation structure 10 may also be formed from a ceramic film with high thermal conductivity such as aluminum nitride. The thickness of the heat dissipation structure 10 is not particularly limited as long as it performs its heat dissipation function, but is preferably 3 μm or more, and may be 5 μm or more, 10 μm or more, 20 μm or more, or 50 μm or more. The thickness of the heat dissipation structure 10 may be 500 μm or less, 400 μm or less, 300 μm or less, 200 μm or less, or 100 μm or less.

[0036] The outer surface 11 of the heat dissipation structure 10 is a heat dissipation surface exposed to the outside of the semiconductor device 1. The outer surface 11 may be a shiny surface. Conversely, the surface roughness Ra of the outer surface 11 may be 1 μm or more, and the outer surface 11 may be subjected to a roughening treatment. In this case, the outer surface 11 may be a matte surface. Furthermore, the heat dissipation structure 10 has a larger area in the planar direction than the bonding material 20, and extends to, for example, the edge of the semiconductor device 1.

[0037] The bonding material 20 is a member that bonds the heat dissipation structure 10 and the semiconductor chip 30, and is formed from a metal paste or an adhesive resin composition. The bonding material 20 is a member that transfers heat generated in the semiconductor chip 30 to the heat dissipation structure 10, and therefore preferably has a thermal conductivity of 1 W / m·K or more. The thermal conductivity of the bonding material 20 may be 5 W / m·K or more. Examples of the metal paste that forms the bonding material 20 include copper (Cu) paste and silver (Ag) paste. Examples of the resin material that forms the bonding material 20 include a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP). A high-heat-dissipation DAF may be used as the material that forms the bonding material 20.

[0038] The semiconductor chip 30 is, for example, a semiconductor chip such as an LSI (Large Scale Integrated Circuit) chip or a CMOS (Complementary Metal Oxide Semiconductor) sensor, which generates heat when in use. The semiconductor chip 30 has a first surface 31, an opposite second surface 32, and a plurality of connection terminals 33 provided on the first surface 31. In the semiconductor device 1, the semiconductor chip 30 is attached to the heat dissipation structure 10 via a bonding material 20 with the connection terminals 33 facing upward (so-called face-up). That is, the thermally conductive bonding material 20 is disposed between the heat dissipation structure 10 and the second surface 32 of the semiconductor chip 30, bonding them together.

[0039] The encapsulant 40 is a member that encapsulates the semiconductor chip 30 with an encapsulant. The encapsulant can be formed, for example, from a resin composition containing an epoxy resin or the like. A plurality of connection terminals 33 of the semiconductor chip 30 are exposed from a first surface 41 of the encapsulant 40, and each connection terminal 33 is connected to a wiring portion 51 of a rewiring layer 50, which will be described later. A second surface 42 of the encapsulant 40 is bonded to the heat dissipation structure 10 around the semiconductor chip 30.

[0040] The rewiring layer 50 is a wiring portion that connects the multiple connection terminals 33 of the semiconductor chip 30 to the corresponding external electrodes 60. The rewiring layer 50 may be configured to widen the pitch between the connection terminals 33 to the pitch between the external electrodes 60. The rewiring layer 50 has a wiring portion 51 and an insulating resin portion 52 in which the wiring portion 51 is embedded.

[0041] The external electrode 60 has an external terminal that is rectangular or circular in plan view and a hemispherical bump provided on the external terminal. The external terminal may be a terminal electrode made of copper or the like. The bump may be a solder bump. The external electrode 60 is connected to the connection terminal 33 of the semiconductor chip 30 via the wiring portion 51 of the rewiring layer 50.

[0042] (Method of Manufacturing Semiconductor Device) Next, a method of manufacturing the semiconductor device 1 will be described with reference to Figures 2 and 3. Figures 2 and 3 are schematic cross-sectional views sequentially illustrating a method of manufacturing the semiconductor device shown in Figure 1.

[0043] The semiconductor device 1 can be manufactured, for example, through the following steps (a) to (g): (a) preparing a carrier having a substrate and a heat dissipation film that can be peeled (separated) from the substrate; (b) preparing a semiconductor chip having a first surface, an opposite second surface, and connection terminals provided on the first surface; (c) attaching the semiconductor chip to the heat dissipation film by interposing a thermally conductive bonding material between the carrier and the second surface of the semiconductor chip; (d) sealing the semiconductor chip with a sealing material; (e) after the sealing step, grinding the sealed sealing material to expose the connection terminals of the semiconductor chip; (f) forming a rewiring layer on the exposed connection terminals; and (g) peeling (separating) the substrate from the heat dissipation film to make the heat dissipation film a heat dissipation structure.

[0044] [Step (a)] Step (a) is a step of preparing a carrier 100 having a substrate 101 and a heat dissipation film 102 that can be peeled (separated) from the substrate 101, as shown in FIG. 2(a). The heat dissipation film 102 corresponds to the heat dissipation structure 10 in the semiconductor device 1 shown in FIG. 1. The carrier 100 is a member in which a heat dissipation film 102 made of copper or nickel is disposed on a substrate 101, such as a glass substrate. For example, Mitsui Kinzoku Co., Ltd.'s HRDP (High Resolution De-bondable Panel) (registered trademark) can be used as such a carrier 100. In this case, the portion of the HRDP that corresponds to the plating seed layer becomes the heat dissipation film 102. Alternatively, the carrier 100 may be, for example, a peelable copper foil or a copper-clad laminate. When a peelable copper foil is used as the carrier 100, the substrate 101 may be an organic insulating substrate and the heat dissipation film 102 may be copper foil, or both the substrate 101 and the heat dissipation film 102 may be copper foil. The heat dissipation film 102 may be a metal film or foil such as copper or silver, but may also be made of a ceramic material such as aluminum nitride, which has high thermal conductivity.

[0045] As described above, the substrate 101 of the carrier 100 may be a glass substrate or an organic insulating substrate made of resin or the like. The thickness of the substrate 101 is, for example, 0.5 mm to 2 mm. Such a substrate 101 is configured so that it can be peeled from the heat dissipation film 102 in a process described below. This peeling occurs between the surface 101a of the substrate 101 and the surface 102a of the heat dissipation film 102. As described above, the heat dissipation film 102 may be a metal film or metal foil made of copper, nickel, silver, or the like. The thickness of the heat dissipation film 102 is, for example, preferably 3 μm or more, and may be 5 μm or more, 10 μm or more, 20 μm or more, or 50 μm or more. The thickness of the heat dissipation film 102 may be 500 μm or less, 400 μm or less, 300 μm or less, 200 μm or less, or 100 μm or less.

[0046] 2B, step (b) is a step of preparing a semiconductor chip 30 (at least one semiconductor chip) having a first surface 31, an opposite second surface 32, and a plurality of connection terminals 33 provided on the first surface 31. The semiconductor chip 30 is, for example, a semiconductor chip such as an LSI (Large Scale Integrated Circuit) chip or a CMOS (Complementary Metal Oxide Semiconductor) sensor, and can be fabricated by various known methods, so description thereof will be omitted.

[0047] 2B, in step (c), the semiconductor chip 30 is attached to the heat dissipation film 102 by interposing a thermally conductive bonding material 20 between the carrier 100 and the second surface 32 of the semiconductor chip 30. In this step, the semiconductor chip 30 is mounted on the carrier 100 using the bonding material 20 so that the multiple connection terminals 33 of the semiconductor chip 30 face away from the carrier 100 (i.e., in a face-up state).

[0048] The bonding material 20 is a thermally conductive bonding member that bonds the semiconductor chip 30 to the heat dissipation film 102 of the carrier 100 and can transmit heat generated by the semiconductor chip 30 to the heat dissipation film 102. The material of the bonding material 20 is not particularly limited, but preferably has a thermal conductivity of 1 W / m·K or higher. The thermal conductivity of the bonding material 20 may be 5 W / m·K or higher. Examples of the metal paste that forms the bonding material 20 include copper (Cu) paste and silver (Ag) paste. Examples of the resin material that forms the bonding material 20 include die attach film (DAF), anisotropic conductive film (ACF), non-conductive film (NCF), or non-conductive paste (NCP). A high-heat dissipation DAF may also be used as the material that forms the bonding material 20. The bonding material 20 may be formed from a resin composition containing a thermosetting or photo-curable resin. In this case, after the semiconductor chip 30 is placed on the carrier 100 via the bonding material 20, the bonding material 20 may be cured by heat or light at a predetermined timing. In the case of photocuring, the bonding material 20 is cured by irradiating it with light such as ultraviolet light from below the carrier 100. In this case, it is preferable that the base material 101 of the carrier 100 is made of glass or an ultraviolet-transmitting material, and that the heat dissipation film 102 is also made to be ultraviolet-transmitting.

[0049] 2C, step (d) is a step of encapsulating the semiconductor chip 30 using an encapsulant. In this step, the semiconductor chip 30 is encapsulated using an encapsulant containing, for example, epoxy resin, to form an encapsulated body 110. The encapsulated body 110 is formed so as to encapsulate the entire semiconductor chip 30, and the connection terminals 33 of the semiconductor chip 30 are also located within the encapsulated body 110.

[0050] 3A, in step (e), after step (d), the encapsulated body 110 is ground to expose the connection terminals 33 of the semiconductor chip 30 to the outside. In this step, the encapsulant 110 is ground so that the connection terminals 33 of the semiconductor chip 30 are exposed to the outside from the surface 115a of the encapsulant 115. In the encapsulant 115 after grinding, the connection terminals 33 of the semiconductor chip 30 are exposed to the outside from the surface 115a of the encapsulant.

[0051] [Step (f)] Step (f) is a step of forming a rewiring layer 50 on the exposed connection terminals 33, as shown in (b) of FIG. 3 . In this step, the sealing body is ground to expose the connection terminals 33, and then the rewiring layer 50 is formed on the connection terminals 33 and the sealing body 115. A known semi-additive method or the like can be used to form the rewiring layer 50. In the rewiring layer 50, a wiring portion 51 and an insulating resin portion 52 covering the wiring portion 51 are formed. The wiring portion 51 may include a terminal electrode formed on the surface of the insulating resin portion 52.

[0052] [Step (g)] In step (g), as shown in FIGS. 3B and 3C, the substrate 101 is peeled off from the heat dissipation film 102 to form the heat dissipation film 102 as a heat dissipation structure. In this step, the substrate 101 is peeled off (separated) from the laminate M. This exposes the heat dissipation film 102 on the outermost layer (lower layer) of the laminate M, thereby functioning as a heat dissipation structure. Bumps of the external electrodes 60 may be connected to the terminal electrodes on the upper portion of the rewiring layer 50 before step (g), or the bumps of the external electrodes 60 may be connected after step (g). The outer surface 102a (11) of the heat dissipation film 102 may be a shiny surface. Conversely, the surface roughness Ra of the outer surface 102a (11) of the heat dissipation film 102 may be 1 μm or more, or may be a matte surface. Furthermore, after the base material 101 is peeled off from the heat dissipation film 102, the outer surface 102a of the heat dissipation film 102 may be roughened. For example, sputtering may be performed as the roughening treatment. Such a treatment may increase the surface area of ​​the heat dissipation film 102 and improve the heat dissipation performance.

[0053] In this manner, the semiconductor device 1 shown in FIG. 1 can be obtained.

[0054] As described above, according to the method for manufacturing a semiconductor device according to this embodiment, after mounting a semiconductor chip 30 on a carrier 100 having a heat dissipation film 102 that can be peeled off from a substrate 101, the substrate 101 is peeled off from the heat dissipation film 102, and the remaining heat dissipation film 102 serves as a heat dissipation structure. In this way, by making a thin member such as the heat dissipation film 102 function as a heat dissipation structure, a semiconductor device 1 having a thin heat dissipation structure can be obtained. Furthermore, because the heat dissipation film 102, which is a thin member, is initially used as part of the carrier 100 in each manufacturing process, a semiconductor device 1 having a thin heat dissipation structure can also be easily manufactured.

[0055] In the method for manufacturing a semiconductor device according to this embodiment, the bonding material 20 has a thermal conductivity of 1 W / m·K or more, which allows the heat generated from the semiconductor chip 30 to be efficiently transferred to the heat dissipation film 102, which is a heat dissipation structure.

[0056] In the method for manufacturing a semiconductor device according to this embodiment, the bonding material 20 may be a metal paste. In this case, heat generated from the semiconductor chip 30 can be efficiently transferred to the heat dissipation film 102, which is a heat dissipation structure.

[0057] In the method for manufacturing a semiconductor device according to this embodiment, the bonding material 20 may be a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP). In this case, the semiconductor chip 1 can be reliably fixed to the heat dissipation film.

[0058] In the method for manufacturing a semiconductor device according to this embodiment, the heat dissipation film 102 has a larger area in the planar direction than the bonding material 20. This makes it possible to manufacture a semiconductor device 1 with improved heat dissipation performance.

[0059] In the method for manufacturing a semiconductor device according to this embodiment, the thickness of the heat dissipation film 102 is preferably 5 μm or more, so that the heat dissipation film 102 can reliably function as a heat dissipation structure.

[0060] In the method for manufacturing a semiconductor device according to this embodiment, the thickness of the heat dissipation film 102 may be 100 μm or less, which allows the semiconductor device 1 to be manufactured with a reduced thickness.

[0061] In the method for manufacturing a semiconductor device according to this embodiment, the surface roughness Ra of the outer surface 102a of the heat dissipation film 102 may be 1 μm or more. In this case, the outer surface area of ​​the heat dissipation film 102, which is a heat dissipation structure, increases, thereby improving the heat dissipation capacity.

[0062] In the manufacturing method of the semiconductor device according to this embodiment, in the step of converting the heat dissipation film 102 into a heat dissipation structure, the outer surface 102a of the heat dissipation film 102 may be roughened after the base material 101 is peeled off from the heat dissipation film 102. In this case, the outer surface area of ​​the heat dissipation film 102, which is the heat dissipation structure, increases, thereby improving the heat dissipation capacity.

[0063] The method for manufacturing a semiconductor device according to this embodiment further includes, after the sealing step, a step of grinding the sealing material to expose the connection terminals 33 of the semiconductor chip 30 to the outside, and a step of forming a redistribution layer 50 on the exposed connection terminals 33. In this case, the redistribution layer 50 connected to the connection terminals 33 of the semiconductor chip 30 can be easily formed while providing a thin heat dissipation structure.

[0064] Second Embodiment Next, a method for manufacturing a semiconductor device according to a second embodiment will be described with reference to FIGS. 4 to 6. FIGS. 4 to 6 are schematic cross-sectional views sequentially illustrating a method for manufacturing a semiconductor device according to the second embodiment. The method for manufacturing a semiconductor device according to the second embodiment is a method for mounting multiple semiconductor chips 30, and differs from the first embodiment in that these semiconductor chips are connected by a bridge chip. The following description will focus on the differences, and explanations of similarities to the first embodiment may be omitted.

[0065] The semiconductor device 1A (see FIG. 6(c)) can be manufactured, for example, through the following steps (a) to (g) and steps (t1) to (t3): (a) preparing a carrier having a base material and a heat dissipation film that can be peeled (separated) from the base material; (b) preparing a first semiconductor chip and a second semiconductor chip, each having a first surface, an opposite second surface, and connection terminals provided on the first surface; (c) attaching each semiconductor chip to the heat dissipation film by interposing a thermally conductive bonding material between the carrier and each second surface of the first semiconductor chip and the second semiconductor chip; (d) sealing each semiconductor chip with a sealing material; (e) after the sealing step, grinding the sealed sealing material to expose the first connection terminals of the first semiconductor chip and the second connection terminals of the second semiconductor chip; and (f) forming a rewiring layer on the exposed first connection terminals and second connection terminals. (t1) A step of placing a bridge chip that connects first connection terminals of the first semiconductor chip and second connection terminals of the second semiconductor chip. (t2) A step of sealing the bridge chip and pillars using another sealing material. (t3) A step of grinding the bridge chip together with the other sealing material. (g) A step of peeling (separating) the base material from the heat dissipation film to make the heat dissipation film a heat dissipation structure.

[0066] 4A, step (a) is a step of preparing a carrier 100 having a base material 101 and a heat dissipation film 102 that is peelable (separable) from the base material 101. The carrier 100 has a basic configuration similar to that of the carrier 100 used in the first embodiment, but is large enough to mount a plurality of semiconductor chips 30.

[0067] 4A, step (b) is a step of preparing a plurality of semiconductor chips 30A, 30B, each having a first surface 31, an opposite second surface 32, and a plurality of connection terminals 33 provided on the first surface 31. While Fig. 4 shows an example in which two semiconductor chips 30A, 30B are mounted, this is not limiting.

[0068] 4A, in step (c), a thermally conductive bonding material 20 is interposed between the carrier 100 and the second surfaces 32 of the semiconductor chips 30A, 30B, and the semiconductor chips 30A, 30B are attached to the heat dissipation film 102. In steps (a) to (c) of FIG. 4A, each of the semiconductor chips 30A, 30B is mounted on the carrier 100 using a corresponding bonding material 20, but the semiconductor chips 30A, 30B may be mounted on the carrier 100 using a common bonding material 20.

[0069] 4B, the step (d) is a step of sealing the semiconductor chips 30A, 30B with a sealing material. In this step, the semiconductor chips 30A, 30B are sealed with a sealing material containing, for example, epoxy resin, to form a sealed body 110.

[0070] 4C, in step (e), after step (d), the encapsulated body 110 is ground to expose the connection terminals 33 of the semiconductor chips 30A and 30B. In this step, the encapsulant 110 is ground so that the connection terminals 33 of the semiconductor chips 30A and 30B are exposed from the surface 115a of the encapsulant 115.

[0071] [Step (f)] Step (f) is a step of forming a rewiring layer 50A on each exposed connection terminal 33, as shown in FIG. 5A. In this step, the sealing body is ground to expose each connection terminal 33, and then the rewiring layer 50A is formed on each connection terminal 33 and the sealing body 115. The rewiring layer 50A has a wiring portion 51 and an insulating resin portion 52 that covers the wiring portion 51. The wiring portion 51 includes a connection terminal 53 for a bridge chip provided in a portion close to the adjacent wiring portion 51, and a plurality of posts 54. The plurality of posts 54 may be thin and miniaturized, for example, may have a height of 50 μm or less.

[0072] 5B, step (t1) is a step of arranging a bridge chip 120 that connects the connection terminals 33 (first connection terminals) of the semiconductor chip 30A with the connection terminals 33 (second connection terminals) of the semiconductor chip 30B. In this step (t1), the connection terminals 33 of the semiconductor chip 30A are connected to the connection terminals 33 of the semiconductor chip 30B via the connection terminals 53 of the redistribution layer 50A formed in step (f) and the bridge chip 120. The bridge chip 120 is a member for physically and electrically connecting the semiconductor chips to each other, and is fabricated as a chip made of silicon, for example.

[0073] 5C, step (t2) is a step of sealing the bridge chip 120 and the plurality of posts 54 with another sealing material. In this step, similar to step (d), for example, the bridge chip 120 and the plurality of posts 54 are sealed with another sealing material containing epoxy resin or the like to form a sealing body 130. The sealing body 130 is formed so as to seal the entire bridge chip 120.

[0074] [Step (t3)] Step (t3) is a step of grinding the bridge chip 120 together with the encapsulant 130. In this step, as shown in FIG. 6A , after step (t2), the encapsulated encapsulant 130 is ground to thin the bridge chip 120 into the bridge chip 125 and expose the tips of the posts 54. In this step, for example, grinding may be performed so that the thickness of the bridge chip 125 after grinding is half or less, or 0.3 times or less, of the thickness of the bridge chip 120 before grinding. Because the bridge chip 120 is ground to be thin in step (t3), the posts 54 can be formed low when forming the rewiring layer in step (f). For example, the posts 54 can be formed to have a height equal to or less than half the thickness of the bridge chip 120. As an example, the height of the posts 54 can be set to 50 μm or less. In this case, a thin dry film resist can be used for fabrication, i.e., a resist with high resolution can be used, so the diameter of the posts 54 can be reduced, which allows the posts 54 to be arranged at a high density. As a result, it is possible to improve the signal transmission speed of the semiconductor device 1A. The diameter of the posts 54 can be, for example, 50 μm or less.

[0075] After grinding in step (t3) is completed, as shown in FIG. 6B, a wiring layer 140 is formed on the ground sealing body 135. The wiring layer 140 has through electrodes 141 connected to the posts 54, insulating portions 142 formed of resin or the like, and terminal electrodes 143 connected to the through electrodes 141 on the insulating portions 142. The terminal electrodes 143 are connected to the tips of the posts 54 via the through electrodes 141.

[0076] [Step (g)] In step (g), as shown in FIGS. 6B and 6C, the substrate 101 is peeled (separated) from the heat dissipation film 102 to form the heat dissipation film 102 as a heat dissipation structure. In this step, the substrate 101 is peeled off from the laminate M1. As a result, the heat dissipation film 102 is exposed on the outermost layer (lower layer) of the laminate M1, and functions as a heat dissipation structure. The external electrodes 60 may be connected to the terminal electrodes 143 on the upper portions of the posts 54 before step (g), or may be connected after step (g). In this manner, the semiconductor device 1A is fabricated.

[0077] As described above, the semiconductor device manufacturing method according to the second embodiment can achieve the same effects as those achieved by the semiconductor device manufacturing method according to the first embodiment. Furthermore, in the semiconductor chip mounting step (c), the semiconductor chips 30A, 30B are mounted on the heat dissipation film 102 by interposing a bonding material 20 between the carrier 100 and each second surface 32 of the semiconductor chips 30A, 30B. In the sealing step (d), the semiconductor chips 30A, 30B are sealed using a sealing material. This allows a thin heat dissipation structure to be provided for a semiconductor device having a 2D mounting structure (e.g., 2.1D mounting or 2.3D mounting). In the case of 2.1D mounting, the semiconductor device is fabricated without the step of providing a bridge chip.

[0078] The method for manufacturing a semiconductor device according to the second embodiment further includes a step of arranging a bridge chip 120 that connects the connection terminals 33 of the semiconductor chip 30A with the connection terminals 33 of the semiconductor chip 30B. This makes it possible to easily provide the bridge chip 120 that connects both the semiconductor chips 30A and 30B.

[0079] Here, a method for further mounting the semiconductor device 1A on the substrate 200 will be described with reference to FIG. 7 . As shown in FIG. 7 , once the semiconductor device 1A and the substrate 200 are prepared, the external electrodes 60 of the semiconductor device 1A are aligned with the terminal electrodes 210 of the substrate 200, and the two are connected by heating or the like. This results in the semiconductor device 1A being mounted on the substrate 200. In the semiconductor device thus formed, as described in step (t3), the height D of the posts 54 is formed to be lower than in the conventional case. Therefore, the semiconductor chips 30A and 30B, which are the main chips, are closer to the substrate 200, further facilitating heat dissipation.

[0080] Although the embodiments of the semiconductor device manufacturing method and semiconductor device according to the present disclosure have been described in detail above, the present invention is not limited to the above embodiments and can be applied to various other embodiments and modifications. For example, the above description illustrates a carrier 100 having a heat dissipation film 102 (heat dissipation structure 10) provided on a substrate 101, but the present invention is not limited to this. For example, a semiconductor device 1, 1A may be manufactured using a carrier 100A as shown in FIG. 8. In this carrier 100A, an adhesive layer or resin layer 103 may be provided between the substrate 101 and the heat dissipation film 102. This can prevent cracking even when the substrate 101 is a fragile material such as a glass substrate. Note that such an adhesive layer or resin layer 103 may be provided on the entire surface 101a of the substrate 101, or on a portion thereof, or on the underside 101b of the substrate 101.

[0081] 1, 1A...semiconductor device, 10...heat dissipation structure, 20...bonding material, 30, 30A, 30B...semiconductor chip, 31...first surface, 32...second surface, 33...connection terminal, 40...sealant, 50, 50A...rewiring layer, 54...post, 100, 100A...carrier, 101...substrate, 102...heat dissipation film, 103...resin layer, 110, 115...sealant, 120, 125...bridge chip, 130, 135...sealant.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a carrier having a base material and a heat dissipation film separable from the base material; preparing at least one semiconductor chip having a first surface, an opposite second surface, and connection terminals provided on the first surface; attaching the semiconductor chip to the heat dissipation film by interposing a thermally conductive bonding material between the carrier and the second surface of the semiconductor chip; sealing the at least one semiconductor chip using a sealing material; and separating the base material from the heat dissipation film.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the bonding material has a thermal conductivity of 1 W / m·K or more.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the bonding material is a metal paste.

4. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the bonding material is a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP).

5. The method for manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the heat dissipation film has a larger area in a planar direction than the bonding material.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, wherein the heat dissipation film has a thickness of 5 μm or more.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the heat dissipation film has a thickness of 100 μm or less.

8. The method for manufacturing a semiconductor device according to any one of claims 1 to 7, wherein the surface roughness Ra of the outer surface of the heat dissipation film is 1 μm or more.

9. The method for manufacturing a semiconductor device according to any one of claims 1 to 8, wherein in the step of separating the base material from the heat dissipation film, the outer surface of the heat dissipation film is roughened after the base material is separated from the heat dissipation film.

10. The method for manufacturing a semiconductor device according to any one of claims 1 to 9, further comprising the steps of: after the sealing step, grinding the sealed sealing material to expose the connection terminals of the semiconductor chip to the outside; and forming a rewiring layer on the exposed connection terminals.

11. A method for manufacturing a semiconductor device according to any one of claims 1 to 10, wherein the at least one semiconductor chip includes a first semiconductor chip and a second semiconductor chip, and in the attaching step, the first semiconductor chip and the second semiconductor chip are attached to the heat dissipation film with the bonding material interposed between the carrier and each second surface of the first semiconductor chip and the second semiconductor chip, and in the sealing step, the first semiconductor chip and the second semiconductor chip are sealed using the sealing material.

12. The method for manufacturing a semiconductor device according to claim 11, further comprising the step of arranging a bridge chip that connects first connection terminals of the first semiconductor chip and second connection terminals of the second semiconductor chip.

13. The method for manufacturing a semiconductor device according to claim 12, further comprising the steps of: after the sealing step, grinding the sealed sealing material to expose the first connection terminals of the first semiconductor chip and the second connection terminals of the second semiconductor chip; and forming a rewiring layer on the exposed first connection terminals and second connection terminals, wherein in the step of placing the bridge chip, the first connection terminals and the second connection terminals are connected via at least a portion of the rewiring layer and the bridge chip.

14. The method for manufacturing a semiconductor device according to claim 12 or 13, further comprising the step of grinding the bridge chip.

15. The method for manufacturing a semiconductor device according to claim 14, further comprising the step of sealing the bridge chip with another sealing material, wherein the bridge chip is ground together with the other sealing material when the sealed other sealing material is ground.

16. A bonding material used in the method for manufacturing a semiconductor device according to any one of claims 1 to 15, the bonding material having a thermal conductivity of 1 W / m·K or more.

17. The bonding material according to claim 16, wherein the bonding material is a metal paste, a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP).

18. A carrier used in the method for manufacturing a semiconductor device according to any one of claims 1 to 15, comprising a base material and a heat dissipation film disposed on a first surface of the base material, the base material being detachably attached to the heat dissipation film.

19. The carrier according to claim 18, wherein the substrate is formed from glass or an ultraviolet-transmitting material.

20. The carrier according to claim 18 or 19, further comprising a resin layer disposed on either the first surface or the second surface opposite the substrate.

21. The carrier according to any one of claims 18 to 20, wherein the heat dissipation film has a thickness of 5 μm or more.

22. A semiconductor device comprising: at least one semiconductor chip having a first surface, an opposite second surface, and connection terminals provided on the first surface; a wiring layer connected to the connection terminals; and a heat dissipation film attached to the second surface of the semiconductor chip with a bonding material.

23. The semiconductor device according to claim 22, wherein the bonding material is a metal paste, a die attach film (DAF), an anisotropic conductive film (ACF), a non-conductive film (NCF), or a non-conductive paste (NCP) having a thermal conductivity of 1 W / m·K or more, and the heat dissipation film has a thickness of 5 μm or more and 100 μm or less and has an area in the planar direction larger than that of the bonding material.

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