Ion-implanted resist underlayer film, resist underlayer film-forming composition, method for producing ion-implanted resist underlayer film, and laminate

Abstract

This ion-implanted resist underlayer film contains a resin (I) containing a structural unit represented by formula (1). (In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond.)

Description

Ion-implanted resist underlayer film, composition for forming resist underlayer film, method for producing ion-implanted resist underlayer film, and laminate

[0001] The present invention relates to an ion-implanted resist underlayer film, a composition for forming a resist underlayer film, a method for producing an ion-implanted resist underlayer film, and a laminate.

[0002] In the manufacture of semiconductor devices, microfabrication by lithography using a resist composition has traditionally been performed. This microfabrication process involves forming a thin film of a photoresist composition on a semiconductor substrate, such as a silicon wafer, irradiating the thin film with active light such as ultraviolet light through a mask pattern bearing a device pattern, developing the thin film, and etching the substrate using the resulting photoresist pattern as a protective film, thereby forming fine irregularities on the substrate surface corresponding to the photoresist pattern. In recent years, the integration density of semiconductor devices has increased, and in addition to the conventionally used i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), and ArF excimer laser (wavelength 193 nm), the practical use of EUV light (wavelength 13.5 nm) or EB (electron beam) is being considered for cutting-edge microfabrication. As a result, poor resist pattern formation due to influences from the semiconductor substrate, etc., has become a major problem. To address this issue, methods of providing a resist underlayer film between the resist and the semiconductor substrate have been widely investigated.

[0003] Patent Document 1 discloses a composition for forming an underlayer film for lithography, which contains a naphthalene ring having a halogen atom. Patent Document 2 discloses a halogenated antireflective film. Patent Document 3 discloses a composition for forming a resist underlayer film.

[0004] In this technical situation, a method for modifying the surface of a film using plasma is known. For example, Patent Document 4 discloses a technique for producing a cured film by irradiating a conductive polymer precursor such as polythiophene with plasma to polymerize it, in order to obtain a film having excellent heat resistance and moisture resistance.

[0005] International Publication No. 2006 / 003850 Special Publication No. 2005-526270 International Publication No. 2020 / 111068 Japanese Patent No. 5746670

[0006] Properties required for a resist underlayer film include, for example, no intermixing with a resist film formed on top (being insoluble in a resist solvent), excellent etching resistance, increased film hardness and film density, etc. The present invention has been made in view of the above circumstances, and has an object to provide a composition for forming a resist underlayer film that can form a resist underlayer film that has excellent etching resistance and increased film hardness and film density, as well as an ion-implanted resist underlayer film, a method for producing an ion-implanted resist underlayer film, and a laminate that use the composition for forming a resist underlayer film.

[0007] The present inventors have conducted extensive research to solve the above problems, and as a result have found that the above problems can be solved, and have completed the present invention having the following gist.

[0008] That is, the present invention includes the following aspects: [1] An ion-implanted resist underlayer film comprising a resin (I) containing a structural unit represented by the following formula (1): (In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond.) [2] The ion-implanted resist underlayer film according to [1], wherein the resin (I) is a resin obtained by a reaction that forms a covalent bond between a carbon atom constituting the aromatic ring of C in formula (1) and a carbon atom of D. [3] The ion-implanted resist underlayer film according to [1] or [2], wherein the intensity ratio Ig / Id of the G band to the D band as determined by Raman spectroscopy is 0.1 to 10.0. [4] The film density is 1.0 to 2.5 g / cm. ３[5] The ion-implanted resist underlayer film according to any one of [1] to [4], wherein the refractive index at a wavelength of 193 nm is 1.3 to 2.5 or the optical absorption coefficient is 0.2 to 1.0, or the refractive index at a wavelength of 633 nm is 1.5 to 3.5 or the optical absorption coefficient is 0 to 0.2. [6] A resist underlayer film-forming composition for forming the ion-implanted resist underlayer film according to any one of [1] to [5], the composition comprising the resin (I) and a solvent. [7] The resist underlayer film-forming composition according to [6], wherein the solvent comprises at least one selected from the group consisting of a carboxylic acid having a hydroxy group, a linear or cyclic alkyl ketone, a cyclic lactone, an alkylene glycol monoalkyl ether, a monocarboxylic acid ester of an alkylene glycol monoalkyl ether, and an alkoxycarboxylic acid ester of an alkylene glycol monoalkyl ether. [8] The composition for forming a resist underlayer film according to [6] or [7], wherein the solvent comprises a solvent having a boiling point of 160°C or higher. [9] The composition for forming a resist underlayer film according to any one of [6] to [8], further comprising at least one selected from the group consisting of an acid, a salt thereof, and an acid generator.

[10] The composition for forming a resist underlayer film according to any one of [6] to [9], further comprising a crosslinking agent.

[11] The composition for forming a resist underlayer film according to any one of [6] to

[10] , further comprising a surfactant.

[12] A method for producing an ion-implanted resist underlayer film, comprising: forming a coating film on a semiconductor substrate using a composition for forming a resist underlayer film; and subjecting the coating film to ion implantation treatment to form an ion-implanted resist underlayer film, wherein the coating film has an increased intensity ratio Ig / Id of G band to D band measured by Raman spectroscopy, an increased refractive index at a wavelength of 193 nm or 633 nm, or a decreased optical absorption coefficient at a wavelength of 193 nm, wherein the composition for forming a resist underlayer film comprises a resin (I) having a structural unit represented by the following formula (1), and a solvent: (In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond.)

[13] The method for producing an ion-implanted resist underlayer film according to

[12] , wherein the resin (I) is a resin obtained by a reaction that forms a covalent bond between a carbon atom constituting the aromatic ring of C in formula (1) and a carbon atom of D.

[14] The method for producing an ion-implanted resist underlayer film according to

[12] or

[13] , wherein the intensity ratio Ig / Id of the ion-implanted resist underlayer film after the ion implantation treatment is 1.01 times or more relative to the intensity ratio Ig / Id of the coated film that is the pre-ion implantation resist underlayer film before the ion implantation treatment.

[15] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[14] , wherein the hardness of the ion-implanted resist underlayer film after the ion implantation treatment is 1.01 times or more relative to the hardness of the coated film that is the pre-ion implantation resist underlayer film before the ion implantation treatment.

[16] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[15] , wherein the film density of the ion-implanted resist underlayer film after the ion implantation treatment is 1.01 times or more the film density of the coating film, which is the pre-ion implantation resist underlayer film, before the ion implantation treatment.

[17] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[16] , wherein the refractive index at a wavelength of 193 nm of the ion-implanted resist underlayer film after the ion implantation treatment is 1.01 times or more relative to the refractive index at a wavelength of 193 nm of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation treatment; or the optical absorption coefficient at a wavelength of 193 nm of the ion-implanted resist underlayer film after the ion implantation treatment is 0.99 times or less relative to the optical absorption coefficient at a wavelength of 193 nm of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation treatment; or the refractive index at a wavelength of 633 nm of the ion-implanted resist underlayer film after the ion implantation treatment is 1.01 times or more relative to the refractive index at a wavelength of 633 nm of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation treatment.

[18] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[17] , wherein the etching resistance of the ion-implanted resist underlayer film after ion implantation is 1.01 times or more the etching resistance of the coating film, which is the pre-ion implantation resist underlayer film, before ion implantation.

[19] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[18] , wherein a gas used in the ion implantation contains at least a rare gas, nitrogen, and hydrogen.

[20] The method for producing an ion-implanted resist underlayer film according to any one of

[12] to

[19] , further comprising, after the ion implantation, baking the semiconductor substrate on which the ion-implanted resist underlayer film has been formed at 400°C or higher.

[21] A laminate comprising: a semiconductor substrate; and the ion-implanted resist underlayer film according to any one of [1] to [5].

[0009] According to the present invention, it is possible to provide a composition for forming a resist underlayer film that is excellent in etching resistance and that can form a resist underlayer film with increased film hardness and film density, as well as an ion-implanted resist underlayer film, a method for producing an ion-implanted resist underlayer film, and a laminate that uses the composition for forming a resist underlayer film.

[0010] [Ion-implanted resist underlayer film] (Resin (I)) The ion-implanted resist underlayer film of the present invention contains a resin (I) containing a structural unit represented by the following formula (1). In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond. Structures C and D will be described later.

[0011] The resin (I) may contain a structural unit represented by the following formula (2). In formula (2), X １ and X ２ are each independently ROCH ２ - group (R is a saturated or unsaturated, linear or branched C alkyl group which may be substituted with a phenyl group, a naphthyl group or an anthracenyl group and which may be interrupted by an oxygen atom or a carbonyl group). １ -C ２０ Aliphatic hydrocarbon group, C３ -C ２０ an alicyclic hydrocarbon group, a hydrogen atom, or a mixture thereof), and * represents a bond.

[0012] The monovalent organic group R is preferably a saturated or unsaturated, linear or branched C alkyl group which may be substituted with a phenyl group, a naphthyl group, or an anthracenyl group and may be interrupted by an oxygen atom or a carbonyl group. １ -C ２０ Aliphatic hydrocarbon group, C ３ -C ２０ an alicyclic hydrocarbon group, or a mixture thereof. When a structural unit contains two or more R, the R may be the same or different.

[0013] Typical saturated aliphatic hydrocarbon groups are straight-chain or branched alkyl groups having 1 to 20 carbon atoms, such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl, s-butyl, t-butyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3-methyl-n-butyl, 1,1-dimethyl-n-propyl, 1,2-dimethyl-n-propyl, 2,2-dimethyl-n-propyl, 1-ethyl-n-propyl, n-hexyl, 1-methyl-n-pentyl, 2-methyl-n-pentyl, Examples include a 3-methyl-n-pentyl group, a 4-methyl-n-pentyl group, a 1,1-dimethyl-n-butyl group, a 1,2-dimethyl-n-butyl group, a 1,3-dimethyl-n-butyl group, a 2,2-dimethyl-n-butyl group, a 2,3-dimethyl-n-butyl group, a 3,3-dimethyl-n-butyl group, a 1-ethyl-n-butyl group, a 2-ethyl-n-butyl group, a 1,1,2-trimethyl-n-propyl group, a 1,2,2-trimethyl-n-propyl group, a 1-ethyl-1-methyl-n-propyl group, a 1-ethyl-2-methyl-n-propyl group, and a 1-methoxy-2-propyl group.

[0014] Cyclic alkyl groups can also be used. For example, cyclic alkyl groups having 3 to 20 carbon atoms include cyclopropyl, cyclobutyl, 1-methylcyclopropyl, 2-methylcyclopropyl, cyclopentyl, 1-methylcyclobutyl, 2-methylcyclobutyl, 3-methylcyclobutyl, 1,2-dimethylcyclopropyl, 2,3-dimethylcyclopropyl, 1-ethylcyclopropyl, 2-ethylcyclopropyl, cyclohexyl, 1-methylcyclopentyl, 2-methylcyclopentyl, 3-methylcyclopentyl, 1-ethylcyclobutyl, 2-ethylcyclobutyl, 3-ethylcyclobutyl, 1,2-dimethylcyclopropyl, 2,3-dimethylcyclopropyl, 1-ethylcyclopropyl, 2-ethylcyclopropyl, cyclohexyl, 1-methylcyclopentyl, 2-methylcyclopentyl, 3-methylcyclopentyl, 1-ethylcyclobutyl, 2-ethylcyclobutyl, 3-ethylcyclobutyl, 1,2-dimethylcyclopropyl, 2,3-dimethylcyclopropyl, 1-ethylcyclopropyl, 2,3 ... butyl group, 1,3-dimethyl-cyclobutyl group, 2,2-dimethyl-cyclobutyl group, 2,3-dimethyl-cyclobutyl group, 2,4-dimethyl-cyclobutyl group, 3,3-dimethyl-cyclobutyl group, 1-n-propyl-cyclopropyl group, 2-n-propyl-cyclopropyl group, 1-i-propyl-cyclopropyl group, 2-i-propyl-cyclopropyl group, 1,2,2-trimethyl-cyclopropyl group, 1,2,3-trimethyl-cyclopropyl group, 2,2,3-trimethyl-cyclopropyl group, 1-ethyl-2-methyl-cyclopropyl group, 2-ethyl-1-methyl-cyclopropyl group, 2-ethyl-2-methyl-cyclopropyl group, and 2-ethyl-3-methyl-cyclopropyl group.

[0015] Typical unsaturated aliphatic hydrocarbon groups are alkenyl groups having 2 to 20 carbon atoms, such as ethenyl, 1-propenyl, 2-propenyl, 1-methyl-1-ethenyl, 1-butenyl, 2-butenyl, 3-butenyl, 2-methyl-1-propenyl, 2-methyl-2-propenyl, 1-ethylethenyl, 1-methyl-1-propenyl, 1-methyl-2-propenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 4-pentenyl, 1-n-propylethenyl, 1-methyl-1-butenyl, 1-methyl 1-methyl-3-butenyl group, 2-ethyl-2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-butenyl group, 3-methyl-3-butenyl group, 1,1-dimethyl-2-propenyl group, 1-i-propylethenyl group, 1,2-dimethyl-1-propenyl group, 1,2-dimethyl-2-propenyl group, 1-cyclopentenyl group, 2-cyclopentenyl group, 3-cyclopentenyl group, 1-hexenyl group, 2-hexenyl group, 3-hexenyl group xenyl group, 4-hexenyl group, 5-hexenyl group, 1-methyl-1-pentenyl group, 1-methyl-2-pentenyl group, 1-methyl-3-pentenyl group, 1-methyl-4-pentenyl group, 1-n-butylethenyl group, 2-methyl-1-pentenyl group, 2-methyl-2-pentenyl group, 2-methyl-3-pentenyl group, 2-methyl-4-pentenyl group, 2-n-propyl-2-propenyl group, 3-methyl-1-pentenyl group, 3-methyl-2-pentenyl group, 3-methyl-3-pentenyl group, 3-methyl-4-pentenyl group, 3-ethyl-3-butenyl group, 4-methyl-1-pentenyl group, 4-methyl-2-pentenyl group, 4-methyl-3-pentenyl group, 4-methyl-4-pentenyl group, 1,1-dimethyl-2-butenyl group, 1,1-dimethyl-3-butenyl group, 1,2-dimethyl-1-butenyl group, 1,2-dimethyl-2-butenyl group, 1,2-dimethyl-3-butenyl group, 1-methyl-2-ethyl-2-propenyl group, 1-s-butylethenyl group, 1,3-dimethyl-1-butenyl group, 1,3-dimethyl-2-butenyl group, 1,3-dimethyl-3-butenyl group, 1-i-butylethenyl group, 2,2-dimethyl-3-butenyl group, 2,3-dimethyl-1-butenyl group, 2,3-dimethyl-2-butenyl group, 2,3-dimethyl-3-butenyl group, 2-i-propyl-2-propenyl group, 3,3-dimethyl-1-butenyl group, 1-ethyl-1-butenyl group, 1-ethyl-2-butenyl group, 1-ethyl-3-butenyl group, 1-n-propyl-1-propenyl group, 1-n-propyl-2-propenyl group, 2-ethyl-1-butenyl group, 2-ethyl-2-butenyl group, 2-ethyl-3-butenyl group, 1,1,2-trimethyl-2-propenyl group, 1-t-butylethenyl group, 1-methyl-1-ethyl-2-propenyl group, 1-ethyl-2-methyl-1-propenyl group, 1-ethyl-2-methyl-2-propenyl group, 1-i-propyl Examples of the alkyl group include propyl-1-propenyl group, 1-i-propyl-2-propenyl group, 1-methyl-2-cyclopentenyl group, 1-methyl-3-cyclopentenyl group, 2-methyl-1-cyclopentenyl group, 2-methyl-2-cyclopentenyl group, 2-methyl-3-cyclopentenyl group, 2-methyl-4-cyclopentenyl group, 2-methyl-5-cyclopentenyl group, 2-methylene-cyclopentyl group, 3-methyl-1-cyclopentenyl group, 3-methyl-2-cyclopentenyl group, 3-methyl-3-cyclopentenyl group, 3-methyl-4-cyclopentenyl group, 3-methyl-5-cyclopentenyl group, 3-methylene-cyclopentyl group, 1-cyclohexenyl group, 2-cyclohexenyl group, and 3-cyclohexenyl group.

[0016] The saturated aliphatic hydrocarbon group, unsaturated aliphatic hydrocarbon group, and cyclic alkyl group may be interrupted once or more than once by an oxygen atom and / or a carbonyl group.

[0017] Resin (I) is a compound having a methoxymethyl group and optionally having a phenolic hydroxyl group, and a compound having a ROCH group other than the methoxymethyl group that reacts with the methoxymethyl group. ２ a compound that provides a - group (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) and, if necessary, a compound containing a functional group that will serve as a linking group (e.g., an aldehyde, a ketone, a ROCH ２ -Ar-CH ２OR (R is a monovalent organic group, a hydrogen atom, or a mixture thereof) in the presence of an acid catalyst (e.g., a sulfonic acid compound).

[0018] An example of the compound having a methoxymethyl group and optionally having a phenolic hydroxyl group, which is used in the synthesis of resin (I), is 3,3',5,5'-tetramethoxymethyl-4,4'-dihydroxybiphenyl.

[0019] Resin (I) includes resin (G) described below. Structure C in resin (I) corresponds to unit structure (A) in resin (G), and structure D in resin (I) corresponds to unit structure (B) in resin (G). Resin (G) will be described below.

[0020] <Resin (G)> Resin (G) has a composite unit structure. The composite unit structure has a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms. Resin (G) is preferably a resin obtained by a reaction that forms a covalent bond between a carbon atom constituting the aromatic ring of unit structure (A) and a carbon atom in unit structure (B). In this specification, resin (G) may be referred to as a "novolac resin."

[0021] The unit structure (A) has, for example, at least one of an oxygen atom constituting an aromatic ring, a sulfur atom constituting an aromatic ring, an oxygen atom bonded to an aromatic ring, a nitrogen atom constituting an aromatic ring, and a nitrogen atom bonded to an aromatic ring. The unit structure (A) does not have a heteroatom, for example, as an atom constituting an aromatic ring or an atom bonded to an aromatic ring.

[0022] The unit structure (B) is, for example, a unit structure derived from an aldehyde compound or an aldehyde equivalent. The aldehyde equivalent is an organic compound capable of forming a covalent bond with an aromatic ring, and is an organic compound having a ketone group, an acetal group, a ketal group, a hydroxyl group or an alkoxy group bonded to a secondary or tertiary carbon atom, a hydroxyl group, an alkoxy group or a halo group bonded to the α-carbon atom of an alkylaryl group, or a carbon-carbon unsaturated bond.

[0023] [I. Definitions of Terms] In this specification, definitions of main terms related to the novolac resin, which is one embodiment of the present invention, are explained below. Unless otherwise specified, the following definitions of each term apply to the novolac resin.

[0024] (I-1) "Novolac Resin" The term "novolac resin" is used in a broad sense to encompass not only phenol-formaldehyde resins (so-called novolac phenolic resins) and aniline-formaldehyde resins (so-called novolac aniline resins) in the narrow sense, but also resins formed by forming a covalent bond (substitution reaction, addition reaction, condensation reaction, addition-condensation reaction, etc.) between an organic compound having a functional group capable of forming a covalent bond with an aromatic ring (for example, an aldehyde group; a ketone group; an acetal group; a ketal group; a hydroxyl group or an alkoxy group bonded to a secondary or tertiary carbon atom; a hydroxyl group, an alkoxy group, or a halo group bonded to the α-carbon atom (e.g., the benzylic carbon atom) of an alkylaryl group; or a carbon-carbon unsaturated bond such as in divinylbenzene or dicyclopentadiene) in the presence of an acid catalyst or under equivalent reaction conditions, and an aromatic ring in a compound having an aromatic ring (preferably having heteroatoms such as oxygen, nitrogen, and sulfur atoms as atoms constituting the aromatic ring or atoms bonded to the aromatic ring)

[0025] Therefore, the novolak resin referred to in this specification is a resin formed by linking a plurality of compounds having aromatic rings together, with an organic compound containing a carbon atom derived from the functional group (sometimes referred to as a "linking carbon atom") forming a covalent bond with an aromatic ring in a compound having an aromatic ring via the linking carbon atom.

[0026] In this specification, the terms unit structure (A) and unit structure (B) are used to refer to unit structures constituting a "novolac resin." Unit structure (A) is a unit structure derived from a compound having an aromatic ring. Unit structure (B) is a unit structure derived from a compound having a functional group that enables covalent bonding with the aromatic ring of unit structure (A).

[0027] (I-2) "Residue" A "residue" refers to an organic group in which a hydrogen atom bonded to a carbon atom or a heteroatom (such as a nitrogen atom, oxygen atom, or sulfur atom) is replaced with a bond, and may be a monovalent group or a polyvalent group. For example, replacing one hydrogen atom with one bond results in a monovalent organic group, and replacing two hydrogen atoms with bonds results in a divalent organic group.

[0028] (I-3) "Aromatic Ring" (Aromatic Group, Aryl Group, Arylene Group) The term "aromatic ring" refers to a concept that encompasses aromatic hydrocarbon rings, aromatic heterocycles, and residues thereof [sometimes referred to as "aromatic groups," "aryl groups" (in the case of monovalent groups), or "arylene groups" (in the case of divalent groups)], and encompasses not only monocyclic (aromatic monocycles) but also polycyclic (aromatic polycycles). In the case of polycycles, at least one monocycle is an aromatic monocycle, and the remaining monocycles that form a fused ring with the aromatic monocycle may be a monocyclic heterocycle (heteromonocycle) or a monocyclic alicyclic hydrocarbon (alicyclic monocycle). In this specification, heteroaryl groups are included in the aryl group. Heteroarylene groups are included in the arylene group.

[0029] Examples of the aromatic ring include aromatic hydrocarbon rings such as benzene, indene, naphthalene, azulene, styrene, toluene, xylene, mesitylene, cumene, anthracene, phenanthrene, triphenylene, benzanthracene, pyrene, chrysene, fluorene, biphenyl, corannulene, perylene, fluoranthene, benzo[k]fluoranthene, benzo[b]fluoranthene, benzo[ghi]perylene, coronene, dibenzo[g,p]chrysene, acenaphthylene, acenaphthene, naphthacene, pentacene, and cyclooctatetraene, more typically aromatic hydrocarbon rings such as benzene, naphthalene, anthracene, and pyrene; and aromatic hydrocarbon rings such as furan, pyran, pyridine, pyrimidine, pyrazine, thiophene, and pyrrolidone. aromatic heterocycles such as indole, N-alkylpyrrole, N-arylpyrrole, imidazole, pyridine, pyrimidine, pyrazine, triazine, thiazole, indole, phenylindole, bisindolefluorene, bisindolebenzofluorene, bisindoledibenzofluorene, purine, quinoline, isoquinoline, chromene, thianthrene, phenothiazine, phenoxazine, xanthene, acridine, phenazine, carbazole, and indolocarbazole, and more typically, furan, thiophene, pyrrole, indole, phenylindole, bisindolefluorene, phenothiazine, carbazole, and indolocarbazole, but are not limited thereto.

[0030] The aromatic ring (for example, a benzene ring, a naphthalene ring, etc.) may have an optional substituent, and examples of such a substituent include the following atoms and groups: a halogen atom; a saturated or unsaturated, linear, branched, or cyclic hydrocarbon group (-R ａ ) (including alkyl groups, alkenyl groups, and alkynyl groups (e.g., propargyl groups), and aryl groups, whose hydrocarbon chains may be interrupted one or more times by oxygen atoms), -OR (wherein R is the hydrocarbon group -R ａ ) Aryloxy group -NH ２ , —NHR or —NR ２(Two R's may be the same or different from each other), where R's are the hydrocarbon groups -R ａ - Hydroxyl group - Hydroxyalkyl group - Carboxy group - Formyl group - Cyano group - Nitro group - Ester group (for example, -CO ２ R or -OCOR, where R is the hydrocarbon group -R ａ an amide group [for example, —NHCOR, —CONHR, —NRCOR (wherein the two Rs may be the same or different), or —CONR ２ (Two R's may be the same or different from each other), where R's are the hydrocarbon groups -R ａ a sulfonyl-containing group (e.g., —SO ２ R, where R is the hydrocarbon group -R ａ or a hydroxyl group -OH.) a thiol group (-SH) a sulfide-containing group (-SR, where R is the hydrocarbon group -R ａ represents an organic group containing an ether bond [R １１ -O-R １１ (R １１ each independently represents an alkyl group having 1 to 6 carbon atoms, such as a methyl group or an ethyl group, or an aryl group, such as a phenyl group, a naphthyl group, an anthranyl group or a pyrenyl group; a residue of an ether compound represented by the formula (I); an organic group containing an ether bond, such as a methoxy group, an ethoxy group or a phenoxy group]

[0031] The term "aromatic ring" also includes organic groups having one or more fused rings of aromatic rings (such as benzene, naphthalene, anthracene, and pyrene) with one or more fused aliphatic or heterocyclic rings. Examples of the aliphatic rings include cyclobutane, cyclobutene, cyclopentane, cyclopentene, cyclohexane, cyclohexene, methylcyclohexane, methylcyclohexene, cycloheptane, and cycloheptene. Examples of the heterocyclic rings include furan, thiophene, pyrrole, imidazole, pyran, pyridine, pyrimidine, pyrazine, pyrrolidine, piperidine, piperazine, and morpholine.

[0032] The "aromatic ring" may be an organic group having a structure in which two or more aromatic rings are linked by a divalent linking group. Examples of the divalent linking group include an alkylene group, an arylene group, -NH-, -NHCO-, -O-, -COO-, -CO-, -S-, -SS-, and -SO ２ The divalent linking group may also be a divalent group in which one hydrogen atom has been removed from any of the substituents of the aromatic rings described above.

[0033] (I-4) "Heterocycle" The term "heterocycle" encompasses both aliphatic heterocycles and aromatic heterocycles, and is a concept that encompasses not only monocyclic (heteromonocyclic) but also polycyclic (heteropolycyclic). In the case of a polycyclic, at least one monocyclic ring is a heteromonocyclic ring, but the remaining monocyclic rings may be aromatic hydrocarbon monocyclic or alicyclic monocyclic. For the aromatic heterocycle, the examples in (I-3) above can be referred to. As with the aromatic ring in (I-3) above, it may have a substituent.

[0034] (I-5) "Non-aromatic ring" (aliphatic ring) When the "non-aromatic ring" is a monocycle, the "non-aromatic monocycle" refers to a monocyclic hydrocarbon that does not belong to the aromatic group, and is typically a monocycle of an alicyclic compound. It may also be called an aliphatic monocycle (which may include an aliphatic heteromonocycle, or may contain an unsaturated bond as long as it does not belong to the aromatic compound). As with the aromatic ring of (I-3) above, it may have a substituent.

[0035] Examples of non-aromatic monocyclic rings (aliphatic rings, aliphatic monocyclic rings) include cyclopropane, cyclobutane, cyclobutene, cyclopentane, cyclopentene, cyclohexane, methylcyclohexane, cyclohexene, methylcyclohexene, cycloheptane, and cycloheptene.

[0036] When the "non-aromatic ring" is a polycyclic ring, the "non-aromatic polycyclic ring" refers to a polycyclic hydrocarbon that does not belong to the aromatic group, and is typically a polycyclic ring of an alicyclic compound. It may also be called an aliphatic polycyclic ring (which may include an aliphatic heteropolycyclic ring (at least one of the monocyclic rings constituting the polycyclic ring is an aliphatic heterocyclic ring), or may contain an unsaturated bond as long as it does not belong to the aromatic compound). It includes a non-aromatic bicyclic ring, a non-aromatic tricyclic ring, and a non-aromatic tetracyclic ring.

[0037] When the "non-aromatic ring" is a bicycle, the "non-aromatic bicycle" refers to a fused ring composed of two monocyclic hydrocarbons that are not aromatic, and is typically a fused ring of two alicyclic compounds. In this specification, it may also be referred to as an aliphatic bicycle (which may include an aliphatic heterobicycle, and may contain unsaturated bonds as long as it does not belong to the aromatic compound). Examples of non-aromatic bicycles include bicyclopentane, bicyclooctane, and bicycloheptene.

[0038] When the "non-aromatic ring" is a tricycle, the "non-aromatic tricycle" refers to a fused ring composed of three monocyclic hydrocarbons that are not aromatic, and is typically a fused ring of three alicyclic compounds (each of which may be a heterocycle or may contain an unsaturated bond as long as it is not an aromatic compound). Examples of non-aromatic tricycles include tricyclooctane, tricyclononane, and tricyclodecane.

[0039] When the "non-aromatic ring" is a tetracyclic ring, the "non-aromatic tetracyclic ring" refers to a fused ring composed of four monocyclic hydrocarbons that are not aromatic, and is typically a fused ring of four alicyclic compounds (each of which may be a heterocyclic ring or may contain an unsaturated bond as long as it is not an aromatic compound). Examples of non-aromatic tetracyclic rings include hexadecahydropyrene.

[0040] (I-6) The term "carbon atoms constituting a ring (moiety)" refers to the carbon atoms constituting a hydrocarbon ring (which may be an aromatic ring, an aliphatic ring, or a heterocyclic ring) in an unsubstituted state.

[0041] (I-7) The term "hydrocarbon group" refers to a group formed by removing one or more hydrogen atoms from a hydrocarbon, and such hydrocarbons include saturated or unsaturated aliphatic hydrocarbons, saturated or unsaturated alicyclic hydrocarbons, and aromatic hydrocarbons.

[0042] (I-8) In the chemical structural formula showing the unit structure of the novolak resin in this specification, a bond (indicated by *) may be shown for convenience. However, unless otherwise specified, such a bond can be at any available bonding position in the unit structure, and does not in any way limit the bonding position in the unit structure.

[0043] Resin (G) has a complex unit structure, which includes a unit structure (A) having an aromatic ring and a unit structure (B) having one or more carbon atoms.

[0044] The composite unit structure of the resin (G) is represented, for example, by the following formula (AB). (In formula (AB), A represents the unit structure (A), and B represents the unit structure (B).)

[0045] <<A-1: Unit Structure (A)>> The unit structure (A) has an aromatic ring. The unit structure (A) has, for example, at least one of an oxygen atom constituting the aromatic ring, a sulfur atom constituting the aromatic ring, an oxygen atom bonded to the aromatic ring, a nitrogen atom constituting the aromatic ring, and a nitrogen atom directly bonded to the aromatic ring. The unit structure (A) does not have a heteroatom, for example, as an atom constituting the aromatic ring or an atom bonded to the aromatic ring.

[0046] The number of carbon atoms contained in the unit structure (A) is not particularly limited, but is, for example, 4 to 100, and preferably 4 to 50.

[0047] Preferably, such aromatic rings have from 4 to 30, more preferably from 4 to 24, carbon atoms.

[0048] Preferably, such aromatic ring is one or more benzene rings, naphthalene rings, anthracene rings, or pyrene rings; or a condensed ring of a benzene ring, a naphthalene ring, an anthracene ring, or a pyrene ring with a heterocycle or an aliphatic ring (such as a fluorene ring, a benzofluorene ring, a dibenzofluorene ring, an indole ring, a carbazole ring, or an indolocarbazole ring).

[0049] The aromatic ring may have any substituent, and from the viewpoint of polymerization reactivity, the substituent may contain the minimum necessary number of heteroatoms.In addition, the aromatic ring may have two or more aromatic rings connected by a linking group, and the linking group may contain the minimum necessary number of heteroatoms.Examples of the heteroatom include an oxygen atom, a nitrogen atom, a sulfur atom, etc.

[0050] The "aromatic ring" may contain at least one heteroatom selected from N, S and O on, within or between the rings.

[0051] Examples of heteroatoms that may be contained on the ring include nitrogen atoms contained in amino groups (e.g., propargylamino groups) and cyano groups; oxygen atoms contained in oxygen-containing substituents such as formyl groups, hydroxy groups, carboxy groups, alkoxy groups, alkenyloxy groups, alkynyloxy groups (e.g., propargyloxy groups), and aryloxy groups; and nitrogen atoms and oxygen atoms contained in nitro groups, which are oxygen-containing and nitrogen-containing substituents. Examples of heteroatoms that may be contained in the ring include oxygen atoms contained in furan and xanthene, nitrogen atoms contained in carbazole and pyrrole, and sulfur atoms contained in phenothiazine. Examples of heteroatoms that may be contained in the linking group of two or more aromatic rings include -NH-, -NHCO-, -O-, -COO-, -CO-, -S-, -SS-, and -SO ２ Examples of the aromatic ring include a nitrogen atom, an oxygen atom, and a sulfur atom. In this specification, "an atom constituting an aromatic ring" is synonymous with "an atom contained within the ring." "An atom bonded to an aromatic ring" refers to, for example, "an atom directly bonded to the ring among atoms or groups contained on the ring" and "an atom directly bonded to the ring among atoms contained between rings." For example, the atoms constituting a benzene ring are carbon atoms. For example, the atoms constituting a pyrrole ring are carbon atoms and nitrogen atoms. For example, the oxygen atom of a hydroxyl group in phenol is not an atom constituting an aromatic ring. For example, the oxygen atom of a hydroxyl group in phenol is an atom bonded to the benzene ring, and is an atom directly bonded to the benzene ring among groups contained on the benzene ring.

[0052] <<A-2: Examples of Skeletons Constituting the Unit Structure (A)>> The unit structure (A) has, for example, a skeleton having an aromatic ring.

[0053] The skeleton having an aromatic ring is preferably an aromatic amine skeleton, a nitrogen-containing aromatic heterocyclic skeleton, or a phenol skeleton.

[0054] The unit structure (A) is, for example, a residue obtained by removing two hydrogen atoms from a skeleton having an aromatic ring. The skeleton having an aromatic ring is derived, for example, from a compound having an aromatic ring when synthesizing the resin (G). The skeleton having an aromatic ring is, for example, a residue obtained by removing two hydrogen atoms from a compound having an aromatic ring when synthesizing the resin (G).

[0055] The skeleton having an aromatic ring may have a substituent. Examples of the substituent include a halo group (halogen atom), an alkyl group, an alkenyl group, an alkynyl group, an alkoxy group, an aryl group, an aryloxy group, an amino group, a hydroxy group, a hydroxyalkyl group, a carboxy group, a formyl group, a cyano group, a nitro group, an ester group, an amide group, a sulfonyl-containing group, a thiol group, a sulfide-containing group, and an ether bond-containing group. Examples of the alkyl group include linear, branched, or cyclic alkyl groups having 1 to 20 carbon atoms. Examples of the alkenyl group include linear, branched, or cyclic alkenyl groups having 2 to 10 carbon atoms. Examples of the alkynyl group include linear, branched, or cyclic alkynyl groups having 2 to 10 carbon atoms. Examples of the alkoxy group include a group represented by -OR. Here, R represents a saturated or unsaturated linear, branched, or cyclic hydrocarbon group (-R ａ The alkoxy group may have, for example, 1 to 20 carbon atoms. The aryl group may have 6 to 30 carbon atoms. The aryloxy group may have 6 to 30 carbon atoms. The amino group may have -NH ２ , —NHR or —NR ２ Here, R is the hydrocarbon group -R ａ represents -NR ２ In the formula, the two R's may be the same or different. Examples of the hydroxyalkyl group include linear, branched, and cyclic hydroxyalkyl groups having 1 to 20 carbon atoms. Examples of the ester group include -CO ２ Here, R is the hydrocarbon group -Rａ The amide group is —NHCOR, —CONHR, —NRCOR, or —CONR ２ Here, R is the hydrocarbon group -R ａ When there are two R's, the two R's may be the same or different. The sulfonyl-containing group includes -SO ２ Here, R is the hydrocarbon group -R ａ or a hydroxy group -OH. Examples of sulfide-containing groups include groups represented by -SR, where R is the hydrocarbon group -R ａ The ether bond-containing group is represented by R １１ -O-R １１ In this case, R １１ each independently represents an alkyl group having 1 to 6 carbon atoms, such as a methyl group or an ethyl group, or an aryl group, such as a phenyl group, a naphthyl group, an anthranyl group, or a pyrenyl group. The ether bond-containing group may be an organic group containing an ether bond, such as a methoxy group, an ethoxy group, or a phenoxy group.

[0056] <<<A-2-1: Aromatic Amine Skeleton>>> The aromatic amine skeleton refers to a skeleton having an aromatic ring and a nitrogen atom bonded to the aromatic ring but not constituting the ring. Examples of the aromatic amine skeleton include skeletons represented by the following formulas (A-1a) to (A-1c). As described below, in the unit structure (A), the hydrogen atom of the NH group may be replaced with a substituent. Examples of the substituent include the substituents described in the above (I-3) "Aromatic Ring", the substituents described in the above (A-2) "Examples of Skeletons Constituting the Unit Structure (A)", and the substituents (S) represented by the below-described formulas (S1) to (S7). (In formulas (A-1a) to (A-1c), Ar １１ R each independently represents a residue of an aromatic ring. １１ each independently represents a hydrogen atom or a residue of an aromatic ring.

[0057] Ar １１ and R １１Examples of the aromatic ring in the residue of the aromatic ring include aromatic rings represented by the following formula (G1): These aromatic rings may have a substituent.

[0058] Examples of the skeleton represented by formula (A-1a) include the following skeletons. The aromatic rings in these skeletons may have a substituent, and the hydrogen atom of the NH group may be replaced with a substituent. The same applies to the following skeletons.

[0059] Examples of the skeleton represented by formula (A-1b) include the following skeletons:

[0060] Examples of the skeleton represented by formula (A-1c) include the following skeletons:

[0061] <<<A-2-2: Nitrogen-Containing Aromatic Heterocyclic Skeleton>>> The nitrogen-containing aromatic heterocyclic skeleton refers to a skeleton having an aromatic heterocycle having a nitrogen atom among the atoms constituting the heterocycle. Examples of the nitrogen-containing aromatic heterocycle include a pyrrole ring, an indole ring, a carbazole ring, a pyridine ring, an acridine ring, a phenoxazine ring, and a phenothiazine ring. These nitrogen-containing aromatic heterocycles may have a substituent. Examples of the nitrogen-containing aromatic heterocyclic skeleton include skeletons represented by the following formula (A-2a), (A-2b-1), (A-2b-2), (A-2c-1), (A-2c-2), (A-2c-3), (A-2c-4), (A-2d), (A-2e), (A-3a), or (A-3b). As will be described later, in the unit structure (A), the hydrogen atom of the NH group may be replaced with a substituent. Examples of the substituent include the substituents described in the above (I-3) "Aromatic ring", the substituents described in the above (A-2) "Examples of skeletons constituting the unit structure (A)", and the substituents (S) represented by the formulae (S1) to (S7) described later. (In the formula, Ar ２１ R each independently represents a residue of an aromatic ring. ２１R each independently represents a hydrogen atom or a residue of an aromatic ring. ２２ each independently represents a hydrogen atom, a hydrocarbon group having 1 to 5 carbon atoms, or a residue of an aromatic ring. ２２ may be joined together to form an unsaturated aliphatic ring. One of the unsaturated bonds in the unsaturated aliphatic ring refers to an unsaturated bond constituting a pyrrole ring. Each R independently represents a hydrogen atom, a residue of an aromatic ring, or a bond to L. L represents a single bond or a linking group. n1 represents 1, and n2 represents 1 or 2. In formulas (A-2b-2) and (A-2c-4), when L is a single bond, the partial structure (In1) and the partial structure (In2), and the partial structure (Ca1) and the partial structure (Ca2), respectively, are bonded by two nitrogen atoms bonding together, or by two Ar ２１ or a nitrogen atom and Ar ２１ In formula (A-2b-2) and formula (A-2c-4), when L is a linking group, L is N or Ar ２１ is bonded to

[0062] Ar ２１ , R ２１ , R ２２ and the aromatic ring in the residue of the aromatic ring of R includes, for example, an aromatic ring represented by the following formula (G2): These aromatic rings may have a substituent.

[0063] Two adjacent R ２２ Examples of the unsaturated aliphatic ring formed by combining these include the following rings: These aliphatic rings may have a substituent.

[0064] Examples of the linking group for L include a saturated hydrocarbon group having 1 to 5 carbon atoms and a valence of (n1+n2), and a residue obtained by removing (n1+n2) hydrogen atoms from an aromatic ring.

[0065] <Formula (A-2d)> (In formula (A-2d), R １１each independently represents a hydrogen atom or an aromatic group, Ar is an aromatic ring moiety, each independently representing a benzene ring, a fused ring composed of 2 to 3 benzene rings, or a structure represented by the following formula (Ar01), ０ represents a single bond, —O—, —S—, or —NR １２ -or-CR １３ R １４ represents -, and R １２ is R １１ Same or different from R １１ is the same as the definition of R １３ and R １４ each represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, n is 1 or 2, when n is 1, Z represents a monovalent organic group, and when n is 2, Z represents a divalent organic group.

[0066] In the unit structure (A), R in formula (A-2d) １１ may be a substituent. １１ is a substituent or an aromatic group, R １１ represents, for example, (i) a methylol group, (ii) an aryl group having 6 to 30 carbon atoms, or (iii) a linear, branched, or cyclic alkoxymethyl group having 2 to 20 carbon atoms; a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms; an alkenyl group having 2 to 10 carbon atoms; or an alkynyl group having 2 to 10 carbon atoms, provided that (ii) and (iii) may be further substituted with an oxygen-atom-containing substituent, a sulfur-atom-containing substituent, a nitrogen-atom-containing substituent, an aryl group, or a halo group, and that (iii) may have the hydrocarbon chain portion further interrupted by an oxygen-atom-containing substituent, a sulfur-atom-containing substituent, a nitrogen-atom-containing substituent, or an arylene group.

[0067] An example of the skeleton represented by formula (A-2d) is the skeleton represented by the following formula (A-2d-1). (R in formula (A-2d-1) １１ , Ar, and X ０ respectively represent R in formula (A-2d). １１ , Ar, and X ０ It is synonymous with R ２１is an aryl group having 6 to 30 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or an alkynyl group having 2 to 10 carbon atoms.

[0068] Ar in formula (A-2d) and formula (A-2d-1) is, for example, a benzene ring or a naphthalene ring. Ar in formula (A-2d) and formula (A-2d-1) may have a structure represented by the following formula (Ar01): (R in formula (Ar01) １１ａ represents R in formula (A-2d-1). １１ is synonymous with R ２１ａ represents R in formula (A-2d-1). ２１ and Ar ａ has the same meaning as Ar in formula (A-2d-1), and X ０ａ represents X in formula (A-2d-1). ０ In the case where two carbon atoms a and b, b and c, or c and d in formula (Ar01) are bonded to each other, X in formula (A-2d) or formula (A-2d-1) ０ forms a condensed ring with the monocyclic moiety containing

[0069] Here, X ０ The monocyclic moiety containing the following formula (AP011) in formula (A-2d) represents a monocyclic ring represented by the following formula (AP011):

[0070] As the skeleton represented by formula (A-2d), a skeleton represented by formula (A-2d-1) above, a skeleton represented by formula (A-2d-2) below, or a skeleton represented by formula (A-2d-3) below is preferred. (In formula (A-2d-2) and formula (A-2d-3), R １１ , Ar, and X ０ respectively represent R in formula (A-2d). １１ , Ar, and X ０ L represents a single bond or a divalent linking group, and examples of the divalent linking group include -O-, -S-, and -SO ２ -, -CO-, -CONH-, -COO-, -NR １０１ -, - (CR １０２ R １０３ ) m １ -, -(Ar １０１ ) m ２ -, -CH ２-(Ar １０１ ) m ２ -CH ２ - or -(cyclo-R)-. １０１ , R １０２ , and R １０３ each independently represents a hydrogen atom; a hydrocarbon group having 1 to 5 carbon atoms; or an aryl group having 6 to 30 carbon atoms; m １ represents an integer of 1 to 10. １０１ each independently represents an arylene group having 6 to 30 carbon atoms; m ２ represents an integer of 1 to 3, which is the number of aromatic rings bonded to each other by single bonds. "cyclo-R" represents a divalent alicyclic hydrocarbon group having a 5- to 8-membered ring, preferably a 6- to 8-membered ring, which may form a condensed ring with one or two benzene or naphthalene rings. R ２２ each independently represents an optionally substituted arylene group having 6 to 30 carbon atoms, an optionally substituted alkenylene group having 2 to 10 carbon atoms, or an optionally substituted alkynylene group having 2 to 10 carbon atoms.

[0071] <Formula (A-2e)> (In formula (A-2e), L represents a single bond or a divalent linking group between any two carbon atoms constituting each azaaryl fused ring, R １１ and R ２１ each independently represents a hydrogen atom or a residue of an aromatic ring; R １２ and R ２２ each independently represents a substituent, n1 and n2 each independently represent R １２ and R ２２ represents the number of substituents, which may be 0, １ and Ar ２ are each independently a benzene ring or a fused ring composed of 2 to 3 benzene rings, which forms a fused ring with the pyrrole ring moiety in formula (A-2e).

[0072] In the unit structure (A), R in formula (A-2e) １１ and R ２１ may be a substituent. １１ and R ２１ is a substituent or a residue of an aromatic group, R１１ and R ２１ represents, for example, (i) a methylol group, (ii) an aryl group having 6 to 30 carbon atoms, or (iii) a linear, branched, or cyclic alkoxymethyl group having 2 to 20 carbon atoms; a linear, branched, or cyclic alkyl group having 1 to 20 carbon atoms; an alkenyl group having 2 to 10 carbon atoms; or an alkynyl group having 2 to 10 carbon atoms, provided that (ii) and (iii) may be further substituted with an oxygen-atom-containing substituent, a sulfur-atom-containing substituent, a nitrogen-atom-containing substituent, an aryl group, or a halo group, and that (iii) may have the hydrocarbon chain portion further interrupted by an oxygen-atom-containing substituent, a sulfur-atom-containing substituent, a nitrogen-atom-containing substituent, or an arylene group.

[0073] In formula (A-2e), L is a single bond or a divalent linking group. L may be bonded to any carbon atom constituting each azaaryl fused ring, and Ar １ and Ar ２ , i.e., in the azaaryl fused ring and However, it is preferably bonded to a carbon atom constituting the pyrrole ring moiety in the azaaryl fused ring.

[0074] Preferred linking groups (L) include —O—, —S—, and —SO ２ -, -CO-, -CONH-, -COO-, -NH-, -(CR １０２ R １０３ ) m １ -, - (Ar １０１ ) m ２ -, -CH ２ -(Ar １０１ ) m ２ -CH ２ -, and -(cyclo-R)-. １０２ and R １０３ each independently represents a hydrogen atom; a hydrocarbon group having 1 to 5 carbon atoms; or an aryl group having 6 to 30 carbon atoms; m １ represents an integer of 1 to 10. １０１ each represents an arylene group having 6 to 30 carbon atoms; m ２represents the number of aromatic rings bonded to each other by single bonds, an integer of 1 to 3. "cyclo-R" represents a divalent alicyclic hydrocarbon group having a 5- to 8-membered ring, preferably a 6- to 8-membered ring, which may form a condensed ring with one or two benzene rings or naphthalene rings.

[0075] <Formula (A-3a) and Formula (A-3b)> (In the formula, Ar ３１ and Ar ３２ each independently represents a residue of an aromatic ring, or together with the carbon atom bound thereto represents a residue of an aromatic ring. X is —O, —S—, —NH—, —CH ２ -, -CH ２ -CH ２ - or -CH=CH-.)

[0076] Ar ３１ and Ar ３２ Examples of the aromatic ring in the residue of the aromatic ring of Ar include the aromatic ring represented by the above formula (G1). ３１ and Ar ３２ Examples of the aromatic ring that is formed by combining with the carbon atom to which it is bonded include a fluorene ring, a benzofluorene ring, and a dibenzofluorene ring.

[0077] Examples of the skeleton represented by formula (A-2a) include the following skeletons. The aromatic rings in these skeletons may have a substituent, and the hydrogen atoms of the NH groups may be replaced with substituents. The same applies to the following skeletons.

[0078] Examples of the skeleton represented by formula (A-2b-1) include the following skeletons:

[0079] Examples of the skeleton represented by formula (A-2b-2) include the following skeletons:

[0080] Examples of the skeleton represented by formula (A-2c-1) include the following skeletons:

[0081] Examples of the skeleton represented by formula (A-2c-2) or formula (A-2c-3) include the following skeletons:

[0082] Examples of the skeleton represented by formula (A-2c-4) include the following skeletons:

[0083] Examples of the skeleton represented by formula (A-2d) include the following skeletons:

[0084] Examples of the skeleton represented by formula (A-2e) include the following skeletons: Note that specific examples of the skeleton represented by formula (A-2d) and specific examples of the skeleton represented by formula (A-2e) may overlap.

[0085] Examples of the skeleton represented by formula (A-3a) include the following skeletons:

[0086] Examples of the skeleton represented by formula (A-3b) include the following skeletons:

[0087] Other examples of the nitrogen-containing aromatic heterocyclic skeleton include the following skeletons.

[0088] <<<A-2-3: Phenol Skeleton>>> The phenol skeleton refers to a skeleton having an aromatic ring and a hydroxy group bonded to the aromatic ring. The number of hydroxy groups bonded to the aromatic ring of the phenol skeleton is not particularly limited and may be one or more. When there are more than one hydroxy groups, the number may be 2 to 10 or 2 to 8. When there are more than one hydroxy groups, the hydroxy groups may be bonded to the same aromatic ring (for example, a benzene ring) or to different aromatic rings. In unit structure (A), the hydrogen atom of the hydroxy group bonded to the aromatic ring may be replaced with a substituent. Examples of the substituent include the substituents described in (I-3) "Aromatic Ring" above, the substituents described in (A-2) "Examples of Skeletons Constituting Unit Structure (A)" above, and the substituents (S) represented by formulas (S1) to (S7) described below.

[0089] Examples of the phenol skeleton include skeletons represented by the following formula (A-4). The aromatic ring in these skeletons may have a substituent, and the hydrogen atom of the hydroxy group may be substituted with a substituent. The same applies to the following skeletons. (In the formula, n1, n2, n4, n5, n6, and n9 each independently represent an integer of 1 to 4. n3a, n3b, n7a, n7b, n8a, and n8b each independently represent an integer of 0 to 4, provided that the sum of n3a and n3b ​​is 1 or more, the sum of n7a and n7b is 1 or more, and the sum of n8a and n8b is 1 or more.)

[0090] Examples of the phenol skeleton include skeletons represented by the following formula (A-5a), (A-5b), (A-5c), or (A-5d). (In the formula, Ar ４１ each independently represents a residue of an aromatic ring; k1 and k2 each independently represent an integer of 1 or 2. X １ is -O-, -CO-, -S-, -SO ２ - or an alkylene group optionally substituted with a halogen atom. ２１ represents a single bond, —O—, —CO—, —S—, or —SO２ When k2 is 1, X represents - or an alkylene group which may be substituted with a halogen atom. ２２ represents a single bond, —O—, —CO—, —S—, or —SO ２ When k1 is 2, X represents - or an alkylene group which may be substituted with a halogen atom. ２１ represents a trivalent saturated hydrocarbon group which may be substituted with a halogen atom; ２２ represents a trivalent saturated hydrocarbon group which may be substituted with a halogen atom. １ represents a trivalent saturated hydrocarbon group. ２ represents a tetravalent saturated hydrocarbon group. m1 and m2 each independently represent an integer of 0 to 3, provided that the sum of m1 and m2 is 1 or more. m3 to m5 each independently represent an integer of 0 to 3, provided that the sum of m3 to m5 is 1 or more. m6 to m8 each independently represent an integer of 0 to 3, provided that the sum of m6 to m8 is 1 or more. m9 to m12 each independently represent an integer of 0 to 3, provided that the sum of m9 to m12 is 1 or more.

[0091] Ar ４１ Examples of the aromatic ring in the residue of the aromatic ring include aromatic rings represented by the following formula (G3): These aromatic rings may have a substituent.

[0092] X １ , and X ２ The number of carbon atoms in the alkylene group which may be substituted with a halogen atom in the formula (I) is, for example, 1 to 20. The structure of the alkylene group may be, for example, linear, branched, cyclic, or a combination of two or more thereof. Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

[0093] Y １ , and Y ２ The number of carbon atoms in the saturated hydrocarbon group in the formula (I) is, for example, 1 to 20. The structure of the saturated hydrocarbon group may be, for example, linear, branched, or cyclic, or a combination of two or more thereof.

[0094] Examples of the phenol skeleton include skeletons represented by the following formula (A-6a), (A-6b-1), (A-6b-2), (A-6c), or (A-6d). (In formula (A-6a), formula (A-6b-1), formula (A-6b-2), formula (A-6c), and formula (A-6d), Ar ５１ each independently represents a residue of an aromatic ring. Each n11 independently represents an integer of 1 to 4. Each p independently represents 0 or 1. When p is 1, the oxygen atom forms an ether bond to form a bridge structure between the aromatic rings, and when p is 0, there is no ether bond to form a bridge structure between the aromatic rings. L represents a single bond or a divalent linking group.

[0095] Ar ５１ Examples of the aromatic ring in the formula (G1) include aromatic rings represented by the above formula (G1), and a benzene ring or a naphthalene ring is preferred. Examples of L include divalent groups obtained by removing two hydrogen atoms from the following structure:

[0096] For example, n11 each independently represents 1 or 2.

[0097] Examples of the phenol skeleton include skeletons represented by the following formula (A-7a), (A-7b), or (A-7c). (In formula (A-7a), formula (A-7b), and formula (A-7c), Ar ６１ each independently represents a residue of an aromatic ring; and each n21 independently represents an integer of 1 to 4.

[0098] Ar ６１ Examples of the aromatic ring in the formula (G1) include aromatic rings represented by the above formula (G1), and a benzene ring and a naphthalene ring are preferred. n21 each independently represents 1 or 2, for example.

[0099] Furthermore, examples of the phenol skeleton include skeletons represented by the following formula (A-8a-1), (A-8a-2), (A-8b), (A-8c), (A-8d), (A-8e), (A-8f), (A-8g-1), or (A-8g-2). In formula (A-8a-1), formula (A-8b), formula (A-8c), formula (A-8e), formula (A-8f), formula (A-8g-1), and formula (A-8g-2), n31 each independently represents an integer of 1 to 4. In formula (A-8a-2), n32 and n33 each independently represent an integer of 0 to 4, provided that the sum of n32 and n33 is 1 or more. In formula (A-8d), n32 and n33 each independently represent an integer of 0 to 4, provided that the sum of n32 and n33 is 1 or more. In formula (A-8b), X １ represents —O— or —NH—. ２ is —O—, —S—, or —CH ２ In formula (A-8e), X ３ is -S-, -CH ２ In formula (A-8f), X represents - or -NH-. ４ represents —CO— or —O—, and X ５ is -CH ２ represents - or -O-.)

[0100] For example, n31 each independently represents 1 or 2. n32 and n33 each independently represents 0, 1 or 2.

[0101] Examples of the skeleton represented by formula (A-4) include the following skeletons. The aromatic rings in these skeletons may have a substituent, and the hydrogen atoms of the hydroxy groups may be substituted with a substituent. The same applies to the following skeletons.

[0102] Examples of the skeleton represented by formula (A-5a) include the following skeletons:

[0103] Examples of the skeleton represented by formula (A-5b) include the following skeletons:

[0104] Examples of the skeleton represented by formula (A-5c) include the following skeletons:

[0105] Examples of the skeleton represented by formula (A-5d) include the following skeletons:

[0106] Examples of the skeleton represented by formula (A-6a) include the following skeletons:

[0107] Examples of the skeleton represented by formula (A-6b-1) or formula (A-6b-2) include the following skeletons:

[0108] Examples of the skeleton represented by formula (A-6c) include the following skeletons:

[0109] Examples of the skeleton represented by formula (A-6d) include the following skeletons:

[0110] Examples of the skeleton represented by formula (A-7a), formula (A-7b), or formula (A-7c) include the following skeletons.

[0111] Examples of the skeleton represented by formula (A-8a-1) or formula (A-8a-2) include the following skeletons:

[0112] Examples of the skeleton represented by formula (A-8b) include the following skeletons:

[0113] Examples of the skeleton represented by formula (A-8c) include the following skeletons:

[0114] Examples of the skeleton represented by formula (A-8d) include the following skeletons:

[0115] Examples of the skeleton represented by formula (A-8e) include the following skeletons:

[0116] Examples of the skeleton represented by formula (A-8f) include the following skeletons:

[0117] Examples of the skeleton represented by formula (A-8g-1) or formula (A-8g-2) include the following skeletons.

[0118] Examples of other skeletons besides the phenol skeleton include the following skeletons.

[0119] Furthermore, the H of NH in the skeleton having an aromatic ring, the H of a hydroxy group bonded to the aromatic ring in the skeleton having an aromatic ring, and the hydrogen atom bonded to the aromatic ring in the skeleton having an aromatic ring may be replaced with a substituent. Examples of the substituent include the substituents (S) represented by the following formulae (S1) to (S7).

[0120] (In formulas (S1) to (S7), R ｓａ represents a monovalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms. ｓｂ R each independently represents a single bond or a divalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms. ｓｃ R each independently represents a divalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms. ｓｄ ａｌｋｙｎｙｌ each independently represents an alkynyl group having 2 to 4 carbon atoms. ｓａ each independently represents a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms. ｓｂ each independently represents a divalent aromatic hydrocarbon group having 6 to 20 carbon atoms. ｓａ and X ｓｂ each independently represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms, or X ｓａ and X ｓｂtogether with the carbon atom bonded to the hydroxy group, form a carbonyl group. n represents an integer of 0 to 5. * represents a bond.

[0121] <R ｓａ > R ｓａ Examples of the monovalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms in the formula (I) include an alkyl group having 1 to 10 carbon atoms and a monovalent unsaturated hydrocarbon group having 2 to 10 carbon atoms. The monovalent unsaturated hydrocarbon group having 2 to 10 carbon atoms has one or more carbon-carbon multiple bonds. When the monovalent unsaturated hydrocarbon group having 2 to 10 carbon atoms has two or more carbon-carbon multiple bonds, the two or more carbon-carbon multiple bonds may all be carbon-carbon double bonds, all may be carbon-carbon triple bonds, or may be a mixture of carbon-carbon double bonds and carbon-carbon triple bonds. The two or more carbon-carbon multiple bonds may or may not be conjugated.

[0122] <R ｓｂ , and R ｓｃ > R ｓｂ , and R ｓｃ In the formula, examples of the divalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms include an alkylene group having 1 to 10 carbon atoms and a divalent unsaturated hydrocarbon group having 2 to 10 carbon atoms. The divalent unsaturated hydrocarbon group having 2 to 10 carbon atoms has one or more carbon-carbon multiple bonds. When the divalent unsaturated hydrocarbon group having 2 to 10 carbon atoms has two or more carbon-carbon multiple bonds, the two or more carbon-carbon multiple bonds may all be carbon-carbon double bonds, all may be carbon-carbon triple bonds, or may be a mixture of carbon-carbon double bonds and carbon-carbon triple bonds. The two or more carbon-carbon multiple bonds may or may not be conjugated. R ｓｂ , and R ｓｃ Examples of the group include the following groups: (* represents a bond.)

[0123] <R ｓｄ ａｌｋｙｎｙｌ > R ｓｄ ａｌｋｙｎｙｌrepresents an alkynyl group having 2 to 4 carbon atoms. Examples of the alkynyl group having 2 to 4 carbon atoms include an ethynyl group, a 1-propynyl group, and a propargyl group (2-propynyl group).

[0124] <Ar ｓａ > Ar ｓａ The monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms in the formula (I) is a residue obtained by removing one hydrogen atom from an aromatic hydrocarbon having 6 to 20 carbon atoms. Examples of aromatic hydrocarbons having 6 to 20 carbon atoms include benzene, naphthalene, anthracene, phenanthrene, perinaphthane, pyrene, fluorene, and biphenyl.

[0125] <Ar ｓｂ > Ar ｓｂ The divalent aromatic hydrocarbon group having 6 to 20 carbon atoms in the formula (I) is a residue obtained by removing two hydrogen atoms from an aromatic hydrocarbon having 6 to 20 carbon atoms. Examples of aromatic hydrocarbons having 6 to 20 carbon atoms include benzene, naphthalene, anthracene, phenanthrene, pyrene, fluorene, and biphenyl.

[0126] <X ｓａ and X ｓｂ > X ｓａ and X ｓｂ In the formula (I), examples of the monovalent hydrocarbon group having 1 to 20 carbon atoms include a monovalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms and a monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms. Examples of the monovalent non-aromatic hydrocarbon group having 1 to 10 carbon atoms include an alkyl group having 1 to 10 carbon atoms. A monovalent aromatic hydrocarbon group having 6 to 20 carbon atoms is a residue obtained by removing one hydrogen atom from an aromatic hydrocarbon having 6 to 20 carbon atoms. Examples of aromatic hydrocarbons having 6 to 20 carbon atoms include benzene, naphthalene, anthracene, phenanthrene, perinaphthane, pyrene, fluorene, and biphenyl.

[0127] Examples of the substituent represented by formula (S1) include the following groups. (* represents a bond.)

[0128] Examples of the substituent represented by formula (S2) include the following groups. (* represents a bond.)

[0129] Examples of the substituent represented by formula (S3) include the following groups. (* represents a bond.)

[0130] Examples of the substituent represented by formula (S4) include the following groups. (* represents a bond.)

[0131] Examples of the substituent represented by formula (S5) include the following groups. (* represents a bond.)

[0132] Examples of the substituent represented by formula (S6) include the following groups. (* represents a bond.)

[0133] Examples of the substituent represented by formula (S7) include the following groups. (* represents a bond.)

[0134] Examples of other substituents include the following groups: (* represents a bond.)

[0135] The unit structure (A) is preferably at least one selected from the following: Note that the positions of the two bonds shown in each unit structure shown below are shown merely for convenience, and each bond can extend from any possible carbon atom, and the positions are not limited thereto.

[0136] (Examples of unit structures composed of aromatic amine skeletons) -NH- can also have a structure in which the hydrogen atom on the N is substituted.

[0137]

[0138] (Examples of unit structures composed of nitrogen-containing aromatic heterocyclic skeletons)

[0139] (Example of a unit structure composed of a phenol skeleton)

[0140] <B-1: Unit structure (B)> The unit structure (B) has one or more carbon atoms. The unit structure (B) is, for example, a unit structure derived from an aldehyde compound or an aldehyde equivalent. The unit structure (B) is one or more types of unit structures containing a linking carbon atom bonding to an aromatic ring in the unit structure (A) [see (I-1) above], and includes, for example, a structure represented by the formula (B1), (B2), or (B3) shown below. The unit structure (B) can link two unit structures (A) by forming a covalent bond with the unit structure (A).

[0141] <<B-2: Formula (B1)>> The unit structure (B) includes, for example, a structure represented by the following formula (B1): The unit structure (B) may be a structure represented by the following formula (B1). In formula (B1), R and R' each independently represent a hydrogen atom, an aromatic ring having 6 to 30 carbon atoms which may have a substituent, a heterocyclic ring having 3 to 30 carbon atoms which may have a substituent, or a linear, branched, or cyclic alkyl group having 10 or less carbon atoms which may have a substituent. R and R' may form a structure having a ring structure together with the carbon atom to which they are bonded. * represents a bond.

[0142] Examples of the substituent include a hydroxy group, a carboxy group, a formyl group, a nitro group, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a cyano group, a group in which H in a hydroxy group has been substituted with the above-mentioned substituent (S), and a halo group.

[0143] Furthermore, the two bonds in formula (B1) can be covalently bonded to the aromatic rings in the two structural units (A), respectively.

[0144] In the definitions of R and R' in formula (B1), the "aromatic ring" and "heterocycle" can be seen in (I-3) and (I-4) above.

[0145] In the definition of R and R′ in formula (B1), examples of the “alkyl group” include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, a cyclopropyl group, an n-butyl group, an i-butyl group, an s-butyl group, a t-butyl group, a cyclobutyl group, a 1-methyl-cyclopropyl group, a 2-methyl-cyclopropyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1- Ethyl-n-propyl group, cyclopentyl group, 1-methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclopropyl group, 2,3-dimethyl-cyclopropyl group, 1-ethyl-cyclopropyl group, 2-ethyl-cyclopropyl group, n-hexyl group, 1-methyl-n-pentyl group, 2-methyl-n-pentyl group, 3-methyl-n-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-dimethyl-n-butyl group ethyl group, 2,2-dimethyl-n-butyl group, 2,3-dimethyl-n-butyl group, 3,3-dimethyl-n-butyl group, 1-ethyl-n-butyl group, 2-ethyl-n-butyl group, 1,1,2-trimethyl-n-propyl group, 1,2,2-trimethyl-n-propyl group, 1-ethyl-1-methyl-n-propyl group, 1-ethyl-2-methyl-n-propyl group, cyclohexyl group, 1-methyl-cyclopentyl group, 2-methyl-cyclopentyl group, 3-methyl-cyclopentyl group, 1-ethyl-cyclobutyl group, 2-ethyl-cyclobutyl group cyclobutyl group, 3-ethylcyclobutyl group, 1,2-dimethylcyclobutyl group, 1,3-dimethylcyclobutyl group, 2,2-dimethylcyclobutyl group, 2,3-dimethylcyclobutyl group, 2,4-dimethylcyclobutyl group, 3,3-dimethylcyclobutyl group, 1-n-propylcyclopropyl group, 2-n-propylcyclopropyl group, 1-i-propylcyclopropyl group, 2-i-propylcyclopropyl group, 1,2,2-trimethylcyclopropyl group, 1,2,3-trimethylcyclopropyl group, 2,2,Examples include a 3-trimethyl-cyclopropyl group, a 1-ethyl-2-methyl-cyclopropyl group, a 2-ethyl-1-methyl-cyclopropyl group, a 2-ethyl-2-methyl-cyclopropyl group, a 2-ethyl-3-methyl-cyclopropyl group, an n-heptyl group, an n-octyl group, an n-nonyl group, and an n-decyl group.

[0146] Preferably, R and R' are each independently phenyl, naphthalenyl, anthracenyl, phenanthrenyl, naphthacenyl, or pyrenyl.

[0147] Examples of the ring structure formed by R and R' together with the carbon atoms to which they are bonded include structures represented by the following formulas. (In the formula, each Ar independently represents a residue of an aromatic ring. The carbon atom marked with * is the carbon atom bonded to R and R′ in formula (B1).)

[0148] Examples of the aromatic ring of Ar include aromatic rings represented by formula (G1).

[0149] The unit structure (B) containing the structure represented by formula (B1) is derived from, for example, an aldehyde compound or a ketone compound. Examples of the aldehyde compound include the compound represented by the following formula (B-1a). Examples of the ketone compound include the compound represented by the following formula (B-1b). (In formula (B-1a) and formula (B-1b), R and R' have the same meanings as R and R' in formula (B1), respectively, with the proviso that R is other than a hydrogen atom. In formula (B-1b), R and R' may form a structure having a ring structure together with the carbon atom to which they are bonded.)

[0150] For example, in obtaining resin (G), the carbonyl groups in formula (B-1a) and formula (B-1b) are converted to *-C-* in formula (B1).

[0151] Some specific examples of the unit structure (B) containing the structure represented by formula (B1) are as follows. * basically indicates the bonding site with the unit structure (A). Needless to say, the structure may contain the exemplified structure as a part of the whole.

[0152]

[0153] <<B-3: Formula (B2)>> The unit structure (B) includes, for example, a structure represented by the following formula (B2): The unit structure (B) may be a structure represented by the following formula (B2).

[0154] In formula (B2), Z ０ represents an aromatic ring residue or aliphatic ring residue having 6 to 30 carbon atoms, which may have a substituent, or an organic group in which two aromatic or aliphatic rings are linked by a single bond. Examples of the organic group in which two aromatic or aliphatic rings are linked by a single bond include divalent residues such as biphenyl, cyclohexylphenyl, and bicyclohexyl.

[0155] Examples of the substituent include a hydroxy group, a carboxy group, a formyl group, a nitro group, an alkyl group, an alkoxy group, an aryl group, an aryloxy group, a cyano group, a group in which H in a hydroxy group has been substituted with the above-mentioned substituent (S), and a halo group.

[0156] J １ and J ２ each independently represents a divalent organic group which may have a direct bond or a substituent. The divalent organic group is preferably a linear or branched alkylene group having 1 to 6 carbon atoms which may be substituted with a hydroxy group, an aryl group (e.g., a phenyl group, a substituted phenyl group), or a halo group (e.g., fluorine) as a substituent. Examples of linear alkylene groups include a methylene group, an ethylene group, a propylene group, a butylene group, a pentylene group, and a hexylene group.

[0157] The unit structure (B) containing the structure represented by formula (B2) is derived from, for example, a compound having a hydroxyl group or an alkoxy group bonded to a secondary or tertiary carbon atom, a compound having a hydroxyl group, an alkoxy group, or a halo group bonded to the α-carbon atom (e.g., the benzylic carbon atom) of an alkylaryl group, or a compound having two carbon-carbon double bonds. These compounds are aldehyde equivalents.

[0158] Examples of compounds having a hydroxyl group or an alkoxy group bonded to a secondary or tertiary carbon atom include compounds represented by the following formula (B-2a): Compounds having a hydroxyl group, an alkoxy group, or a halo group bonded to the α-carbon atom (such as the benzylic carbon atom) of an alkylaryl group include compounds represented by the following formula (B-2b): Compounds having two carbon-carbon double bonds include compounds represented by the following formula (B-2c) or (B-2d): (In formula (B-2a), formula (B-2b), and formula (B-2b), J １ , J ２ , and Z ０ is J in formula (B2) １ , J ２ , and Z ０ In formula (B-2a), X ａ , and X ｂ each independently represents a hydroxyl group or an alkoxy group bonded to a secondary or tertiary carbon atom. ａ , and Y ｂ each independently represents a hydroxyl group, an alkoxy group, or a halo group bonded to the α-position carbon atom (e.g., the benzyl-position carbon atom) of the alkylaryl group. In formula (B-2d), n represents an integer of 0 to 4.

[0159] For example, when obtaining resin (G), X in formula (B-2a) ａ -J １ is *-J in formula (B2). １ It is converted into ２ -X ｂ is J in formula (B2) ２For example, when resin (G) is obtained, Y in formula (B-2b) is converted to -*. ａ -J １ is *-J in formula (B2). １ It is converted into ２ -Y ｂ is J in formula (B2) ２ It is converted to -*.

[0160] An example of formula (B-2a) is the following compound:

[0161] An example of formula (B-2b) is the following compound:

[0162] An example of formula (B-2c) is the following compound:

[0163] Some specific examples of unit structures containing the structure represented by formula (B2) are as follows. * indicates the bonding site with the unit structure (A). Needless to say, the unit structure may contain the exemplified structure as a part of the whole.

[0164]

[0165] <<B-4: Formula (B3)>> In formula (B3), Z is a group having a monocyclic ring or a bicyclic, tricyclic, or tetracyclic fused ring, which may have a substituent, and which has 4 to 25 carbon atoms. The number of carbon atoms referred to here means only the number of carbon atoms constituting the ring skeleton of the monocyclic ring or the bicyclic, tricyclic, or tetracyclic fused ring excluding the substituent, and does not include the number of heteroatoms constituting the heterocyclic ring when the monocyclic ring or the fused ring is a heterocyclic ring.

[0166] The monocycle is a monocycle having a π electron number that does not satisfy 4n+2 (n is an integer of 0 or more) (hereinafter, may be referred to as a "non-Hückel monocycle"); at least one of the monocycles constituting the bicycle, tricycle, and tetracycle is a monocycle having a π electron number that does not satisfy 4n+2 (n is an integer of 0 or more), and the remaining monocycles may be either a monocycle having a π electron number that satisfies 4n+2 (n is an integer of 0 or more) or a monocycle having a π electron number that does not satisfy 4n+2 (n is an integer of 0 or more).

[0167] The monocyclic or bicyclic, tricyclic, or tetracyclic fused ring may further form a fused ring with one or more aromatic rings to form a pentacyclic or higher fused ring, and the pentacyclic or higher fused ring preferably has 40 or less carbon atoms. The number of carbon atoms referred to here means only the number of carbon atoms constituting the ring skeleton of the pentacyclic or higher fused ring excluding substituents, and does not include the number of heteroatoms constituting the heterocyclic ring when the pentacyclic or higher fused ring is a heterocyclic ring.

[0168] X and Y may be the same or different and each represent -CR ３１ R ３２ represents a - group, and R ３１ and R ３２ are the same or different and each represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms.

[0169] x and y represent the numbers X and Y, respectively, and each independently represents 0 or 1.

[0170] In formula (B3), and in formula (B3) At least one of the above is bonded to any carbon atom constituting the non-Hückel monocycle of Z (referred to as "carbon atom Z") (when x = 1, y = 1) or extends from carbon atom Z (when x = 0, y = 0).

[0171] For example, in formula (B3), is bonded to any carbon atom constituting the non-Hückel monocyclic ring of Z (referred to as "carbon atom 1") (when x = 1) or extends from carbon atom 1 (when x = 0),

[0172] In formula (B3), is bonded to any of the carbon atoms (referred to as "carbon atom 2") constituting the non-Hückel monocycle of Z (when y = 1) or extends from carbon atom 2 (when y = 0), and carbon atom 1 and carbon atom 2 may be the same or different, and if they are different, they may belong to the same non-Hückel monocycle or different non-Hückel monocycles.

[0173] Furthermore, formula (B3) may optionally contain linking carbon atoms other than carbon atom 1 and carbon atom 2. When Z is a tricyclic or higher fused ring, the permutation position relationship between one or two non-Hückel monocycles to which carbon atoms 1 and 2 in formula (B3) belong and the remaining monocycles is arbitrary, and when carbon atom 1 and carbon atom 2 belong to different non-Hückel monocycles (referred to as "non-Hückel monocycle 1" and "non-Hückel monocycle 2," respectively), the permutation position relationship between non-Hückel monocycle 1 and non-Hückel monocycle 2 in the fused ring is also arbitrary. Some specific examples of organic groups containing a structure represented by formula (B3) are as follows. The bonding site with unit structure (A) is not particularly limited. Needless to say, a structure containing the exemplified structure as a part of the whole may also be used.

[0174] Examples include those having more than two bonds (*), but these excess bonds can be used for bonding to an aromatic ring in another polymer chain, for crosslinking, or for other purposes, or they can be bonds to hydrogen bonds.

[0175]

[0176]

[0177]

[0178]

[0179]

[0180]

[0181] Hereinafter, in formula (B3), and in formula (B3) In this case, only one of the carbon atoms constituting the non-Hückel monocycle of Z (referred to as "carbon atom Z") is bonded (when x = 1, y = 1) or extends from carbon atom Z (when x = 0, y = 0). As a more specific structure of formula (B3) in this case, for example, in the following formula (C31), p and k which can be bonding hands are １ and k ２ Among them, p and k １ , or p and k ２ The remaining bond is bonded to a hydrogen atom.

[0182] In addition, in the following formula (C32), p and k which can be bonding hands １ , k ２ and m, p and k １ , p and k ２ , or depending on p and m, it can be a unit structure (B) represented by formula (B3). The remaining bond is bonded to a hydrogen atom.

[0183] Some specific examples of formula (B3) corresponding to formula (31) or formula (32) are as follows: * indicates the bonding site with the unit structure (A).

[0184] In formula (B3), a bond extends from the aromatic ring in each of these structures to another unit structure (for example, unit structure (A)), but in the specific examples below, such a bond is omitted. Needless to say, the unit structure may include the exemplified structure as a part of the whole. In the above specific examples, when there is no bond from the aromatic ring, it can be a specific example of a polymer terminal.

[0185] The novolak resin having the structure represented by formula (AB) can be prepared by a known method. For example, a compound having a ring represented by H-A-H and OHC-B, O═C-B, RO-B-OR, RO-CH ２ -B-CH ２It can be prepared by condensing an oxygen-containing compound represented by —OR, etc., where A and B are as defined above, and R represents a hydrogen atom, halogen, or an alkyl group having about 1 to 3 carbon atoms.

[0186] The ring-containing compound and the oxygen-containing compound may each be used alone or in combination of two or more. In this condensation reaction, the oxygen-containing compound can be used in an amount of 0.1 to 10 moles, preferably 0.1 to 2 moles, per mole of the ring-containing compound.

[0187] Examples of the catalyst used in the condensation reaction include mineral acids such as sulfuric acid, phosphoric acid, and perchloric acid, organic sulfonic acids such as p-toluenesulfonic acid, p-toluenesulfonic acid monohydrate, methanesulfonic acid, and trifluoromethanesulfonic acid, and carboxylic acids such as formic acid and oxalic acid. The amount of catalyst used varies depending on the type of catalyst used, but is usually 0.001 to 10,000 parts by mass, preferably 0.01 to 1,000 parts by mass, and more preferably 0.05 to 100 parts by mass per 100 parts by mass of the ring-containing compound (or the total amount of ring-containing compounds when multiple types are used).

[0188] The condensation reaction can be carried out without a solvent, but is usually carried out using a solvent. The solvent is not particularly limited as long as it can dissolve the reaction substrates and does not inhibit the reaction. Examples of the solvent include 1,2-dimethoxyethane, diethylene glycol dimethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, tetrahydrofuran, tetrahydropyran, dioxane, 1,2-dichloromethane, 1,2-dichloroethane, toluene, N-methylpyrrolidone, and dimethylformamide. The condensation reaction temperature is usually 40°C to 200°C, preferably 100°C to 180°C. The reaction time varies depending on the reaction temperature, but is usually 5 minutes to 50 hours, preferably 5 minutes to 24 hours.

[0189] The weight average molecular weight of the novolak resin according to one embodiment of the present invention is usually 500 to 100,000, preferably 600 to 50,000, 700 to 10,000, or 800 to 8,000.

[0190] [Composition for forming a resist underlayer film] The composition for forming a resist underlayer film of the present invention contains the above-mentioned resin (I) and a solvent. Hereinafter, each component of the composition for forming a resist underlayer film will be described.

[0191] The content of the resin (I) in the composition for forming a resist underlayer film is, for example, preferably 25 to 100 mass %, more preferably 50 to 100 mass %, and even more preferably 70 to 100 mass %, based on the mass of the film-forming components. Here, the film-forming components refer to the components remaining after excluding the solvent component from the composition for forming a resist underlayer film.

[0192] <Solvent> The solvent is not particularly limited as long as it can dissolve the resin (I) and other optional components added as needed.

[0193] Examples of the solvent include carboxylic acids having a hydroxy group, linear or cyclic alkyl ketones, cyclic lactones, alkylene glycol alkyl ethers, and alkylene glycol monoalkyl ether carboxylic acid esters (monocarboxylic acid esters of alkylene glycol monoalkyl ethers, and alkoxycarboxylic acid esters of alkylene glycol monoalkyl ethers).

[0194] Examples of carboxylic acids having a hydroxy group include ethyl lactate, propyl lactate, isopropyl lactate, butyl lactate, isobutyl lactate, ethyl hydroxyacetate, ethyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxypropionate, and methyl 2-hydroxy-3-methylbutyrate.

[0195] Examples of linear or cyclic alkyl ketones include methyl ethyl ketone, cyclopentanone, and cyclohexanone.

[0196] An example of the cyclic lactone is γ-butyrolactone.

[0197] Examples of alkylene glycol alkyl ethers include alkylene glycol monoalkyl ethers and alkylene glycol dialkyl ethers. Examples of alkylene glycol monoalkyl ethers include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether (1-methoxy-2-propanol), propylene glycol monoethyl ether (1-ethoxy-2-propanol), methyl isobutyl carbinol, and propylene glycol monobutyl ether. Examples of alkylene glycol dialkyl ethers include diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, and propylene glycol dibutyl ether.

[0198] Examples of alkylene glycol monoalkyl ether carboxylic acid esters include monocarboxylic acid esters of alkylene glycol monoalkyl ethers and alkoxycarboxylic acid esters of alkylene glycol monoalkyl ethers. Examples of monocarboxylic acid esters of alkylene glycol monoalkyl ethers include alkylene glycol monoalkyl ether acetates. Examples of alkylene glycol monoalkyl ether acetates include methyl cellosolve acetate, ethyl cellosolve acetate, propylene glycol monomethyl ether acetate (1-methoxy-2-propanol monoacetate), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, ethylene glycol monopropyl ether acetate, and ethylene glycol monobutyl ether acetate. Examples of the alkoxycarboxylic acid ester of alkylene glycol monoalkyl ether include 2-methoxyethyl methyl carbonate, 2-ethoxyethyl methyl carbonate, 2-ethoxyethyl ethyl carbonate, and 2-propoxyethyl methyl carbonate.

[0199] Also, solvents with boiling points of 160°C or higher can be included in combination with solvents with boiling points below 160°C.

[0200] As such a high-boiling point solvent, for example, the following compounds described in WO 2018 / 131562 (A1) can be preferably used.

[0201] [R in formula (i)] １ , R ２ and R ３each represent a hydrogen atom, an oxygen atom, a sulfur atom, or an alkyl group having 1 to 20 carbon atoms which may be interrupted by an amide bond, and may be the same or different from each other and may be bonded to each other to form a ring structure.] Alternatively, 1,6-diacetoxyhexane (boiling point 260°C) and tripropylene glycol monomethyl ether (boiling point 242°C) described in JP-A No. 2021-84974, as well as various other high-boiling point solvents described in paragraph 0082 of the same publication, can be preferably used.

[0202] Alternatively, dipropylene glycol monomethyl ether acetate (boiling point 213°C), diethylene glycol monoethyl ether acetate (boiling point 217°C), diethylene glycol monobutyl ether acetate (boiling point 247°C), dipropylene glycol dimethyl ether (boiling point 171°C), dipropylene glycol monomethyl ether (boiling point 187°C), dipropylene glycol monobutyl ether (boiling point 231°C), tripropylene glycol monomethyl ether (boiling point 247°C), di ... Preferred examples of high-boiling solvents that can be used include dimethyl ether (boiling point 242°C), γ-butyrolactone (boiling point 204°C), benzyl alcohol (boiling point 205°C), propylene carbonate (boiling point 242°C), tetraethylene glycol dimethyl ether (boiling point 275°C), 1,6-diacetoxyhexane (boiling point 260°C), dipropylene glycol (boiling point 230°C), 1,3-butylene glycol diacetate (boiling point 232°C), and various other high-boiling solvents described in paragraphs 0023 to 0031 of the publication.

[0203] The composition for forming a resist underlayer film, which is one embodiment of the present invention, may contain an acid and / or a salt thereof and / or an acid generator.

[0204] Examples of the acid include p-toluenesulfonic acid, trifluoromethanesulfonic acid, salicylic acid, 5-sulfosalicylic acid, 4-phenolsulfonic acid, camphorsulfonic acid, 4-chlorobenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, citric acid, benzoic acid, hydroxybenzoic acid, and naphthalenecarboxylic acid.

[0205] The salt may be a salt of the above-mentioned acid, and is not limited thereto, but suitable salts include ammonia derivative salts such as trimethylamine salts and triethylamine salts, pyridine derivative salts, and morpholine derivative salts.

[0206] The acid and / or salt thereof may be used singly or in combination of two or more kinds, and the blending amount is usually 0.0001 to 20 mass %, preferably 0.0005 to 10 mass %, and more preferably 0.01 to 5 mass %, based on the total solid content.

[0207] Examples of the acid generator include a thermal acid generator and a photoacid generator.

[0208] Examples of the thermal acid generator include 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, K-PURE (registered trademark) CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, TAG2689, and TAG2700 (manufactured by King Industries), and SI-45, SI-60, SI-80, SI-100, SI-110, and SI-150 (manufactured by Sanshin Chemical Industry Co., Ltd.), and other organic sulfonic acid alkyl esters.

[0209] Photoacid generators generate acid when the resist is exposed to light. This allows the acidity of the underlayer film to be adjusted. This is one way to match the acidity of the underlayer film to that of the upper layer resist. Adjusting the acidity of the underlayer film also allows for adjustment of the pattern shape of the upper layer resist.

[0210] Examples of the photoacid generator contained in the composition for forming a resist underlayer film of the present invention include an onium salt compound, a sulfonimide compound, and a disulfonyldiazomethane compound.

[0211] Examples of the onium salt compound include iodonium salt compounds such as diphenyliodonium hexafluorophosphate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-normal butanesulfonate, diphenyliodonium perfluoro-normal octanesulfonate, diphenyliodonium camphorsulfonate, bis(4-tert-butylphenyl)iodonium camphorsulfonate, and bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate; and sulfonium salt compounds such as triphenylsulfonium hexafluoroantimonate, triphenylsulfonium nonafluoro-normal butanesulfonate, triphenylsulfonium camphorsulfonate, and triphenylsulfonium trifluoromethanesulfonate.

[0212] Examples of sulfonimide compounds include N-(trifluoromethanesulfonyloxy)succinimide, N-(nonafluoronormalbutanesulfonyloxy)succinimide, N-(camphorsulfonyloxy)succinimide, and N-(trifluoromethanesulfonyloxy)naphthalimide.

[0213] Examples of the disulfonyldiazomethane compound include bis(trifluoromethylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, bis(phenylsulfonyl)diazomethane, bis(p-toluenesulfonyl)diazomethane, bis(2,4-dimethylbenzenesulfonyl)diazomethane, and methylsulfonyl-p-toluenesulfonyldiazomethane.

[0214] The acid generators may be used singly or in combination of two or more.

[0215] When an acid generator is used, the proportion thereof is 0.01 to 10 parts by mass, or 0.1 to 8 parts by mass, or 0.5 to 5 parts by mass, relative to 100 parts by mass of the solid content of the composition for forming a resist underlayer film.

[0216] The composition for forming a resist underlayer film, which is one embodiment of the present invention, may contain, in addition to the above, a crosslinking agent, a surfactant, a light absorbing agent, a rheology adjuster, an adhesion aid, and the like, as necessary.

[0217] Representative examples of the crosslinking agent include an aminoplast crosslinking agent and a phenoplast crosslinking agent.

[0218] As the crosslinking agent, a crosslinking agent having high heat resistance can be used, and as the crosslinking agent having high heat resistance, a compound containing a crosslink-forming substituent having an aromatic ring (e.g., a benzene ring or a naphthalene ring) in the molecule can be preferably used.

[0219] Aminoplast crosslinking agents include highly alkylated, alkoxylated, or alkoxyalkylated melamine, benzoguanamine, glycoluril, urea, and polymers thereof. Preferred are crosslinking agents having at least two crosslink-forming substituents, such as methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or methoxymethylated thiourea. Condensates of these compounds can also be used.

[0220] Preferably, it is at least one selected from the group consisting of tetramethoxymethyl glycoluril and hexamethoxymethyl melamine.

[0221] Some specific examples are as follows:

[0222]

[0223] Phenoplast crosslinking agents include highly alkylated, alkoxylated, or alkoxyalkylated aromatics, their polymers, and the like. Preferred crosslinking agents have at least two crosslink-forming substituents per molecule, such as 2,6-dihydroxymethyl-4-methylphenol, 2,4-dihydroxymethyl-6-methylphenol, bis(2-hydroxy-3-hydroxymethyl-5-methylphenyl)methane, bis(4-hydroxy-3-hydroxymethyl-5-methylphenyl)methane, 2,2-bis(4-hydroxy-3,5-dihydroxymethylphenyl)propane, bis(3-formyl-4-hydroxyphenyl)methane, bis(4-hydroxy-2,5-dimethylphenyl)formylmethane, and α,α-bis(4-hydroxy-2,5-dimethylphenyl)-4-formyltoluene. Condensates of these compounds can also be used.

[0224] In addition to the above, other examples of such compounds include compounds having a partial structure of the following formula (4) and polymers or oligomers having a repeating unit of the following formula (5).

[0225] The above R １１ , R １２ , R １３ , and R １４ is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and the above-mentioned examples of these alkyl groups can be used. n1 is an integer of 1 to 4, n2 is an integer of 1 to (5-n1), and (n1+n2) is an integer of 2 to 5. n3 is an integer of 1 to 4, n4 is an integer of 0 to (4-n3), and (n3+n4) is an integer of 1 to 4. Oligomers and polymers having a repeating unit structure number of 2 to 100 or 2 to 50 can be used.

[0226] Some specific examples are as follows:

[0227]

[0228]

[0229]

[0230]

[0231] The crosslinking agents, such as aminoplast crosslinking agents and phenoplast crosslinking agents, may be used alone or in combination of two or more. The aminoplast crosslinking agent may be produced by a known method or a method equivalent thereto, or a commercially available product may be used.

[0232] The amount of the crosslinking agent, such as an aminoplast crosslinking agent or a phenoplast crosslinking agent, used varies depending on the coating solvent used, the base substrate used, the required solution viscosity, the required film shape, and the like, but is 0.001 mass % or more, 0.01 mass % or more, 0.05 mass % or more, 0.5 mass % or more, or 1.0 mass % or more, and is 80 mass % or less, 50 mass % or less, 40 mass % or less, 20 mass % or less, or 10 mass % or less, relative to the total solids content of the composition for forming a resist underlayer film of the present invention.

[0233] The composition for forming a resist underlayer film according to the present invention can contain a surfactant in order to prevent pinholes, striations, etc., and to further improve the coatability for preventing surface irregularities.

[0234] Examples of surfactants include nonionic surfactants such as polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether; polyoxyethylene alkylaryl ethers such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethylene-polyoxypropylene block copolymers; sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, and sorbitan tristearate; and polyoxyethylene sorbitan fatty acid esters such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, and polyoxyethylene sorbitan tristearate. Examples of suitable surfactants include fluorosurfactants such as EFTOP EF301, EF303, and EF352 (trade names, manufactured by Tochem Products Co., Ltd.), Megafac F171, F173, R-30, and R-40 (trade names, manufactured by Dainippon Ink Co., Ltd.), Fluorad FC430 and FC431 (trade names, manufactured by Sumitomo 3M Limited), and Asahiguard AG710, Surflon S-382, SC101, SC102, SC103, SC104, SC105, and SC106 (trade names, manufactured by Asahi Glass Co., Ltd.); and organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0235] The amount of these surfactants to be added is usually 2.0 mass % or less, and preferably 1.0 mass % or less, based on the total solid content of the composition for forming a resist underlayer film according to the present invention. These surfactants may be added alone or in combination of two or more.

[0236] Examples of the light absorber include commercially available light absorbers described in "Technology and Market of Industrial Dyes" (CMC Publishing) and "Dye Handbook" (edited by the Society of Organic Synthetic Chemistry), such as C.I. Disperse Yellow 1, 3, 4, 5, 7, 8, 13, 23, 31, 49, 50, 51, 54, 60, 64, 66, 68, 79, 82, 88, 90, 93, 102, 114, and 124; C.I. Disperse Orange 1, 5, 13, 25, 29, 30, 31, 44, 57, 72, and 73; C.I. C.I. Disperse Red 1, 5, 7, 13, 17, 19, 43, 50, 54, 58, 65, 72, 73, 88, 117, 137, 143, 199, and 210; C.I. Disperse Violet 43; C.I. Disperse Blue 96; C.I. Fluorescent Brightening Agent 112, 135, and 163; C.I. Solvent Orange 2 and 45; C.I. Solvent Red 1, 3, 8, 23, 24, 25, 27, and 49; C.I. Pigment Green 10; C.I. Pigment Brown 2, etc. can be suitably used. The light-absorbing agent is usually blended in an amount of 10% by mass or less, preferably 5% by mass or less, based on the total solid content of the composition for forming a resist underlayer film according to the present invention.

[0237] The rheology modifier is added primarily to improve the fluidity of the resist underlayer film-forming composition, thereby improving the film thickness uniformity of the resist underlayer film and the ability of the resist underlayer film-forming composition to fill holes, particularly during the baking process. Specific examples include phthalic acid derivatives such as dimethyl phthalate, diethyl phthalate, diisobutyl phthalate, dihexyl phthalate, and butyl isodecyl phthalate; adipic acid derivatives such as di-n-butyl adipate, diisobutyl adipate, diisooctyl adipate, and octyldecyl adipate; maleic acid derivatives such as di(n-butyl) maleate, diethyl maleate, and dinonyl maleate; oleic acid derivatives such as methyl oleate, butyl oleate, and tetrahydrofurfuryl oleate; and stearic acid derivatives such as n-butyl stearate and glyceryl stearate. These rheology modifiers are typically incorporated in an amount of less than 30% by mass based on the total solids content of the resist underlayer film-forming composition of the present invention.

[0238] The adhesion promoter is added mainly for the purpose of improving the adhesion between the substrate or resist and the composition for forming a resist underlayer film, and particularly to prevent peeling of the resist during development. Specific examples include chlorosilanes such as trimethylchlorosilane, dimethylvinylchlorosilane, methyldiphenylchlorosilane, and chloromethyldimethylchlorosilane; alkoxysilanes such as trimethylmethoxysilane, dimethyldiethoxysilane, methyldimethoxysilane, dimethylvinylethoxysilane, diphenyldimethoxysilane, and phenyltriethoxysilane; silazanes such as hexamethyldisilazane, N,N'-bis(trimethylsilyl)urea, dimethyltrimethylsilylamine, and trimethylsilylimidazole; vinyltrichlorosilane; Examples of the adhesion promoter include silanes such as silane, γ-chloropropyltrimethoxysilane, γ-aminopropyltriethoxysilane, and γ-glycidoxypropyltrimethoxysilane; heterocyclic compounds such as benzotriazole, benzimidazole, indazole, imidazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, urazole, thiouracil, mercaptoimidazole, and mercaptopyrimidine; and ureas such as 1,1-dimethylurea and 1,3-dimethylurea, or thiourea compounds. These adhesion promoters are typically blended in an amount of less than 5% by mass, and preferably less than 2% by mass, based on the total solids content of the composition for forming a resist underlayer film according to the present invention.

[0239] The solids content of the composition for forming a resist underlayer film according to the present invention is 0.1 to 70% by mass, or 0.1 to 60% by mass. The solids content is the content of all components excluding the solvent from the composition for forming a resist underlayer film. The solids content may contain a crosslinkable resin in an amount of 1 to 99.9% by mass, or 50 to 99.9% by mass, or 50 to 95% by mass, or 50 to 90% by mass.

[0240] [Method for Producing Ion-Implanted Resist Underlayer Film] The ion-implanted resist underlayer film can be formed, for example, as follows using the composition for forming a resist underlayer film according to the present invention.

[0241] Substrates used in the manufacture of semiconductor devices (e.g., silicon wafer substrates, silicon dioxide coated substrates (SiO ２ The resist underlayer film-forming composition according to one embodiment of the present invention is applied onto a substrate (e.g., a silicon nitride substrate (SiN substrate), a silicon oxynitride substrate (SiON substrate), a titanium nitride substrate (TiN substrate), a tungsten substrate (W substrate), a glass substrate, an ITO substrate, a polyimide substrate, or a substrate coated with a low dielectric constant material (low-k material)) by a suitable application method such as a spinner or coater, and then baked using a heating means such as a hot plate to form a resist underlayer film (coated film). Baking conditions are appropriately selected from a baking temperature of 80°C to 800°C and a baking time of 0.3 to 60 minutes. Preferably, the baking temperature is 150°C to 500°C and the baking time is 0.5 to 2 minutes. The atmospheric gas during baking may be air, or an inert gas such as nitrogen or argon. In one embodiment, an oxygen concentration of 1% or less is particularly preferred. The thickness of the underlayer film formed here is, for example, 1 to 10,000 nm, 1 to 1,000 nm, 5 to 1,000 nm, 10 to 500 nm, 20 to 400 nm, or 30 to 300 nm. Furthermore, if a quartz substrate is used as the substrate, a replica of the quartz imprint mold (mold replica) can be produced.

[0242] The ion implantation process can be performed using, for example, an ion implantation device. The ion implantation device has, for example, a high voltage unit, a transport unit, and a process chamber. The high voltage unit has an ion generation source, an ion extraction unit, a mass analysis unit, and a slit. The ion generation source generates ions to be implanted. The ion extraction unit extracts ions generated from the ion generation source. The mass analysis unit bends the direction of ion travel using a magnetic field. The ions then pass through the slit, extracting desired ions. The transport unit has an acceleration unit and a scanning unit. The acceleration unit accelerates ions that have passed through the slit. The scanning unit scans the accelerated ion beam. The ion implantation target is placed in the process chamber. The ion beam scanned by the ion beam scanning unit is irradiated onto the ion implantation target. In this way, the ion implantation device implants ions into the ion implantation target (resist underlayer film). Ions to be implanted include, for example, C, Ar, Xe, He, Ne, and N. ２ , Kr, CO ２ , H ２ , O ２ , B.F. ３ , P.H. ３ , AsH ３ , SiF ４ , BCL ３ , P.F. ３ , GeH ４ , B ２ H ６ Examples include:

[0243] When C (carbon) is ion-implanted, the implantation energy is, for example, 1 to 20 keV, and the implantation amount is, for example, 1×10 １４ ~5 x 10 １４ [atoms / cm ２ In addition, when ion implanting Ar (argon), the implantation energy is, for example, 1 to 100 keV, and the implantation amount is, for example, 5×10 １４ ~5 x 10 １６ [atoms / cm ２ In addition, when Xe (xenon) ions are implanted, the implantation energy is, for example, 1 to 200 [keV], and the implantation amount is, for example, 1×10 １４ ~5 x 10１５ [atoms / cm ２ ] range can be used.

[0244] The formed resist underlayer film is subjected to ion implantation to obtain an ion-implanted resist underlayer film, which is one embodiment of the present invention. Because the ion implantation process has been performed, the ion-implanted resist underlayer film exhibits film properties that change compared to the underlayer film before the process. The ion implantation process can improve, for example, the etching resistance and optical constants of the resist underlayer film, and can increase the film hardness and density. Examples of optical constants include refractive index (n value) and optical absorption coefficient (k value). Even if the film thickness is reduced by the ion implantation process, the remaining underlayer film can still be used as the ion-implanted resist underlayer film of the present invention. The film thickness of the ion-implanted underlayer film is, for example, 1 to 10,000 nm, 1 to 1,000 nm, 5 to 1,000 nm, 10 to 500 nm, 20 to 400 nm, or 50 to 300 nm. The change in film thickness of the underlayer film due to the ion implantation treatment is, for example, 100 to 50%, or 95 to 60%, or 90 to 70% of the film thickness before the treatment, where the film thickness before the treatment is taken as 100%. The range in which the film physical properties such as etching resistance change due to the ion implantation treatment can be, for example, the surface of the underlayer film, or from the surface to 1 nm, or from the surface to 5 nm, or from the surface to 20 nm, or from the surface to the bottom, based on the film after the ion implantation treatment. The film physical properties of the underlayer film can be continuously changed in the film thickness direction.

[0245] The ion-implanted resist underlayer film preferably has an intensity ratio Ig / Id of G band to D band as measured by Raman spectroscopy of 0.1 to 10.0, more preferably 0.1 to 5.0, even more preferably 0.1 to 3.0, and particularly preferably 0.1 to 1.0. Raman spectroscopy is carried out, for example, by the method described in the Examples.

[0246] By subjecting a coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the resulting ion-implanted resist underlayer film exhibits an increased intensity ratio Ig / Id of the G band to the D band as measured by Raman spectroscopy. The intensity ratio Ig / Id of the ion-implanted resist underlayer film after ion implantation treatment is preferably 1.01 times or more, more preferably 1.05 times or more, and even more preferably 1.10 times or more, relative to the intensity ratio Ig / Id of the resist underlayer film before ion implantation treatment (hereinafter also referred to as "pre-ion implantation resist underlayer film"). The upper limit of the intensity ratio Ig / Id of the ion-implanted resist underlayer film relative to the intensity ratio Ig / Id of the pre-ion implantation resist underlayer film is not particularly limited, but is, for example, 5.0 times.

[0247] The film density of the ion-implanted resist underlayer film is 1.0 to 2.5 g / cm ３ is preferred, and 1.0 to 2.0 g / cm ３ More preferably, 1.0 to 1.75 g / cm ３ The film density of the resist underlayer film after ion implantation treatment can be determined, for example, using the measuring device described in the Examples.

[0248] By subjecting a coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the film density of the resulting ion implanted resist underlayer film is increased. The film density of the ion implanted resist underlayer film relative to the film density of the resist underlayer film before ion implantation treatment is preferably 1.01 times or more, more preferably 1.05 times or more, and even more preferably 1.10 times or more. The upper limit of the film density of the ion implanted resist underlayer film relative to the film density of the resist underlayer film before ion implantation treatment is not particularly limited, but is, for example, 5.0 times.

[0249] The refractive index of the ion-implanted resist underlayer film at a wavelength of 193 nm is preferably 1.3 to 2.5, more preferably 1.4 to 2.0, and even more preferably 1.5 to 1.9. The refractive index of the ion-implanted resist underlayer film at a wavelength of 633 nm is preferably 1.5 to 3.5, more preferably 1.6 to 3.0, and even more preferably 1.7 to 2.5. The refractive index of the ion-implanted resist underlayer film at a wavelength of 193 nm or 633 nm can be determined, for example, using the measuring device described in the Examples.

[0250] The optical absorption coefficient of the ion-implanted resist underlayer film at a wavelength of 193 nm is preferably 0.2 to 1.0, more preferably 0.3 to 0.9, and even more preferably 0.35 to 0.8. The optical absorption coefficient of the ion-implanted resist underlayer film at a wavelength of 633 nm is preferably 0 to 0.2, and more preferably 0.01 to 0.15. The optical absorption coefficient of the ion-implanted resist underlayer film at a wavelength of 193 nm or 633 nm can be determined, for example, using the measuring device described in the Examples.

[0251] By subjecting the coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the refractive index at a wavelength of 193 nm of the resulting ion implanted resist underlayer film increases. The refractive index at a wavelength of 193 nm of the ion implanted resist underlayer film after ion implantation treatment is preferably 1.01 times or more, more preferably 1.03 times or more, and even more preferably 1.05 times or more, relative to the refractive index at a wavelength of 193 nm of the pre-ion implantation resist underlayer film before ion implantation treatment. The upper limit of the refractive index at a wavelength of 193 nm of the ion implanted resist underlayer film relative to the refractive index at a wavelength of 193 nm of the pre-ion implantation resist underlayer film is not particularly limited, but is, for example, 5.0 times. By subjecting the coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the refractive index at a wavelength of 633 nm of the resulting ion implanted resist underlayer film increases. The refractive index of the ion-implanted resist underlayer film at a wavelength of 633 nm after ion implantation is preferably 1.01 times or more, more preferably 1.05 times or more, and even more preferably 1.10 times or more, relative to the refractive index of the pre-ion implantation resist underlayer film at a wavelength of 633 nm before ion implantation. The upper limit of the refractive index of the ion-implanted resist underlayer film at a wavelength of 633 nm relative to the refractive index of the pre-ion implantation resist underlayer film is not particularly limited, and is, for example, 5.0 times.

[0252] By subjecting a coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the optical absorption coefficient at a wavelength of 193 nm of the resulting ion implanted resist underlayer film is reduced. The optical absorption coefficient at a wavelength of 193 nm of the ion implanted resist underlayer film after ion implantation treatment is preferably 0.99 times or less, more preferably 0.95 times or less, and even more preferably 0.85 times or less, relative to the optical absorption coefficient at a wavelength of 193 nm of the pre-ion implantation resist underlayer film before ion implantation treatment. The lower limit of the optical absorption coefficient of the ion implanted resist underlayer film relative to the optical absorption coefficient of the pre-ion implantation resist underlayer film at a wavelength of 193 nm is not particularly limited, but is, for example, 0.2 times.

[0253] Furthermore, an adhesion layer and / or a silicon-containing layer containing 99% by mass or less, or 50% by mass or less of Si can be formed by coating or vapor deposition on the ion-implanted resist underlayer film according to one embodiment of the present invention. For example, the adhesion layer described in JP-A-2013-202982 and Japanese Patent No. 5827180 can be formed by spin coating using a composition for forming a silicon-containing resist underlayer film (inorganic resist underlayer film) described in WO 2009 / 104552 (A1), or a Si-based inorganic material film can be formed by CVD or the like.

[0254] Furthermore, by applying the composition for forming a resist underlayer film, which is one embodiment of the present invention, to a semiconductor substrate having a portion with a step and a portion without a step (a so-called stepped substrate) and baking it, the step between the portion with a step and the portion without a step can be reduced.

[0255] A method for producing an ion-implanted resist underlayer film according to one aspect of the present invention includes the steps of: forming a coating film on a semiconductor substrate using a resist underlayer film-forming composition according to one aspect of the present invention; and subjecting the coating film to ion implantation treatment to form an ion-implanted resist underlayer film in which the intensity ratio Ig / Id of the G band to the D band as measured by Raman spectroscopy is increased, or the refractive index at a wavelength of 193 nm or 633 nm is increased, or the optical absorption coefficient at a wavelength of 193 nm is decreased.

[0256] The conditions for the ion implantation process are, for example, as described above.

[0257] By subjecting a coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the hardness of the resulting ion-implanted resist underlayer film is increased. The hardness of the ion-implanted resist underlayer film relative to the hardness of the resist underlayer film before ion implantation treatment is preferably 1.01 times or more, more preferably 1.05 times or more, and even more preferably 1.10 times or more. The upper limit of the hardness of the ion-implanted resist underlayer film relative to the hardness of the resist underlayer film before ion implantation treatment is not particularly limited, but is, for example, 5.0 times. The hardness of the resist underlayer film before ion implantation treatment and the hardness of the ion-implanted resist underlayer film can be measured, for example, using the measuring device described in the Examples.

[0258] By subjecting a coating film (resist underlayer film before ion implantation treatment) to ion implantation treatment, the etching resistance of the resulting ion-implanted resist underlayer film is improved. The etching resistance of the ion-implanted resist underlayer film relative to the etching resistance of the resist underlayer film before ion implantation treatment is preferably 1.01 times or more, more preferably 1.05 times or more, and even more preferably 1.10 times or more. The upper limit of the etching resistance of the ion-implanted resist underlayer film relative to the etching resistance of the resist underlayer film before ion implantation treatment is not particularly limited, but is, for example, 5.0 times. The etching resistance of the resist underlayer film before ion implantation treatment and the etching resistance of the ion-implanted resist underlayer film can be determined, for example, by the method described in the Examples.

[0259] The gas used in the ion implantation process preferably contains at least a rare gas, nitrogen, and hydrogen, and examples of the rare gas include helium, neon, and argon.

[0260] Preferably, the method for producing an ion-implanted resist underlayer film according to one aspect of the present invention further comprises, after the ion implantation treatment, a step of baking the semiconductor substrate on which the ion-implanted resist underlayer film has been formed at 400°C or higher.

[0261] [Laminate] The laminate of the present invention comprises a semiconductor substrate and the ion-implanted resist underlayer film of the present invention.

[0262] [Method for manufacturing a semiconductor device] (i) A method for manufacturing a semiconductor device, which is one aspect of the present invention, includes: a step of forming a resist underlayer film on a semiconductor substrate using a composition for forming a resist underlayer film, which is one aspect of the present invention; a step of forming an ion-implanted resist underlayer film by ion implanting the resist underlayer film; a step of forming a resist film on the ion-implanted resist underlayer film; a step of forming a resist pattern by irradiating the resist film with light or an electron beam and developing it; a step of etching the ion-implanted resist underlayer film through the resist pattern to form a patterned ion-implanted resist underlayer film; and a step of processing a semiconductor substrate through the patterned ion-implanted resist underlayer film.

[0263] (ii) A method for manufacturing a semiconductor device, which is an aspect of the present invention, includes the steps of: forming a resist underlayer film on a semiconductor substrate using the resist underlayer film-forming composition, which is an aspect of the present invention; forming an ion-implanted resist underlayer film by ion implanting the resist underlayer film; forming a hard mask on the ion-implanted resist underlayer film; further forming a resist film on the hard mask; irradiating the resist film with light or an electron beam and developing it to form a resist pattern; etching the hard mask through the resist pattern to form a patterned hard mask; etching the ion-implanted resist underlayer film through the patterned hard mask to form a patterned ion-implanted resist underlayer film; and processing a semiconductor substrate through the patterned ion-implanted resist underlayer film.

[0264] (iii) A method for manufacturing a semiconductor device, which is an aspect of the present invention, includes the steps of: forming a resist underlayer film on a semiconductor substrate using the resist underlayer film-forming composition, which is an aspect of the present invention; subjecting the resist underlayer film to ion implantation to form an ion-implanted resist underlayer film; forming a hard mask on the ion-implanted resist underlayer film; further forming a resist film on the hard mask; irradiating the resist film with light or an electron beam and developing it to form a resist pattern; etching the hard mask through the resist pattern to form a patterned hard mask; etching the ion-implanted resist underlayer film through the patterned hard mask to form a patterned ion-implanted resist underlayer film; removing the hard mask; and processing a semiconductor substrate through the patterned ion-implanted resist underlayer film.

[0265] (iv) A method for manufacturing a semiconductor device according to one embodiment of the present invention includes the steps of: forming a resist underlayer film on a semiconductor substrate using the resist underlayer film-forming composition according to one embodiment of the present invention; subjecting the resist underlayer film to ion implantation to form an ion-implanted resist underlayer film; forming a hard mask on the ion-implanted resist underlayer film; further forming a resist film on the hard mask; irradiating the resist film with light or an electron beam and developing it to form a resist pattern; etching the hard mask through the resist pattern to form a patterned hard mask; etching the ion-implanted resist underlayer film through the patterned hard mask to form a patterned ion-implanted resist underlayer film; removing the hard mask; forming a vapor-deposited film (spacer) on the ion-implanted resist underlayer film after hard mask removal; processing the vapor-deposited film (spacer) by etching; removing the patterned ion-implanted resist underlayer film to leave the patterned vapor-deposited film (spacer); and processing a semiconductor substrate through the patterned vapor-deposited film (spacer).

[0266] The manufacturing methods (i) to (iv) above can be used to process a semiconductor substrate.

[0267] The step of forming a resist underlayer film using the composition for forming a resist underlayer film, which is one aspect of the present invention, is as described above in [Resist Underlayer Film].

[0268] A hard mask such as a silicon-containing film may be formed as a second resist underlayer film on the resist underlayer film formed in the above steps, and a resist pattern may be formed thereon [(ii) to (iv) above].

[0269] The hard mask may be a coating film of an inorganic material or a vapor-deposited film of an inorganic material formed by a vapor deposition method such as CVD or PVD, and may be a SiON film, a SiN film, or a SiO ２ An example is a membrane.

[0270] Furthermore, an anti-reflective coating (BARC) may be formed on this hard mask, or a resist shape correction film without anti-reflective properties may be formed.

[0271] In the step of forming the resist pattern, exposure is performed through a mask (reticle) for forming a predetermined pattern or by direct writing. Examples of exposure sources that can be used include g-line, i-line, KrF excimer laser, ArF excimer laser, EUV, and electron beam. After exposure, post-exposure baking is performed as needed. The resist is then developed with a developer (e.g., a 2.38% by mass aqueous solution of tetramethylammonium hydroxide, butyl acetate), and then rinsed with a rinse solution or pure water to remove the used developer. Post-baking is then performed to dry the resist pattern and enhance adhesion to the underlayer.

[0272] The etching step performed after the formation of the resist pattern is performed by dry etching.

[0273] The following gases are used for processing the hard mask (silicon-containing layer), resist underlayer film, and substrate: CF ４ , CHF ３ , C.H. ２ F ２ , CH ３ F, C ４ F ６ , C ４ F ８ , O ２ , N ２ O, NO ２ , H ２ , He can be used. These gases may be used alone or in combination of two or more. Furthermore, these gases may be mixed with argon, nitrogen, carbon dioxide, carbonyl sulfide, sulfur dioxide, neon, or nitrogen trifluoride.

[0274] The resist film may be patterned by a nanoimprint method or a self-assembled film method.

[0275] In the nanoimprint method, a resist composition is molded using a patterned mold that is transparent to irradiated light, while in the self-assembled film method, a pattern is formed using a self-assembled film that naturally forms a regular structure on the nanometer order, such as a diblock polymer (e.g., polystyrene-polymethyl methacrylate).

[0276] In the nanoimprint method, before applying the curable composition that will form the resist film, a silicon-containing layer (hard mask layer) may be optionally formed on the resist underlayer film by coating or vapor deposition, and further an adhesion layer may be formed on the resist underlayer film or the silicon-containing layer (hard mask layer) by coating or vapor deposition, and the curable composition that will form the resist film may be applied on the adhesion layer.

[0277] In addition, wet etching may be performed to simplify the process and reduce damage to the processed substrate. This leads to suppression of fluctuations in processing dimensions and reduction of pattern roughness, making it possible to process the substrate with high yield. Therefore, in steps (iii) to (iv), the hard mask can be removed using either etching or an alkaline chemical solution. In particular, when an alkaline chemical solution is used, there are no restrictions on the components, but it is preferable that the alkaline component contains the following:

[0278] Examples of the alkaline component include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, methyltripropylammonium hydroxide, methyltributylammonium hydroxide, ethyltrimethylammonium hydroxide, dimethyldiethylammonium hydroxide, benzyltrimethylammonium hydroxide, hexadecyltrimethylammonium hydroxide, and (2-hydroxyethyl)trimethylammonium hydroxide, monoethanolamine, diethanolamine, triethanolamine, 2-(2-aminoethoxy)ethanol, N,N-dimethylethanolamine, N,N-diethylethanolamine, N , N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine, monoisopropanolamine, diisopropanolamine, triisopropanolamine, tetrahydrofurfurylamine, N-(2-aminoethyl)piperazine, 1,8-diazabicyclo[5.4.0]undecene-7, 1,4-diazabicyclo[2.2.2]octane, hydroxyethylpiperazine, piperazine, 2-methylpiperazine, trans-2,5-dimethylpiperazine, cis-2,6-dimethylpiperazine, 2-piperidinemethanol, cyclohexylamine, 1,5-diazabicyclo[4.3.0]nonene-5, etc. Furthermore, particularly from the viewpoint of handling, tetramethylammonium hydroxide and tetraethylammonium hydroxide are particularly preferred, and an inorganic base may be used in combination with the quaternary ammonium hydroxide. As the inorganic base, alkali metal hydroxides such as potassium hydroxide, sodium hydroxide, rubidium hydroxide, etc. are preferred, with potassium hydroxide being more preferred.

[0279] The present invention will now be described in detail with reference to examples, but the present invention is not limited to these examples.

[0280] The weight average molecular weight Mw of the resin shown in Synthesis Example 1 below is the result of measurement by gel permeation chromatography (hereinafter abbreviated as GPC). A GPC device manufactured by Tosoh Corporation was used for the measurement, and the measurement conditions were as follows: GPC column: TSKgel Super-Multipore HZ-N (2 columns) Column temperature: 40°C Solvent: tetrahydrofuran (THF) Flow rate: 0.35 ml / min Standard sample: polystyrene (manufactured by Tosoh Corporation)

[0281] The polymer of structural formula (S1) used in the composition for forming a resist underlayer film was synthesized using the following compounds A, B, C, D, E, and E.

[0282] Compound groups A to B

[0283] Catalyst group C, solvent group D, reprecipitation solvent group E Methanesulfonic acid: C1 Propylene glycol monomethyl ether acetate (=PGMEA): D1 Methanol: E1

[0284] Synthesis Example 1: 25.0 g of A1, 10.5 g of B1, 15.5 g of B2, 16.8 g of C1, and 100.0 g of D1 were placed in a flask. The mixture was then heated to 110°C under nitrogen and allowed to react for approximately 6 hours. After the reaction was stopped, the mixture was reprecipitated with E1 and dried to obtain resin (S1). The weight-average molecular weight Mw measured by GPC in polystyrene equivalent was approximately 3,100. The resulting resin was dissolved in PGMEA to obtain a solution of the target compound. Subsequent ion exchange operations were carried out for 4 hours using cation exchange resin and anion exchange resin as needed. The results are shown in Table 1, and the structure and weight-average molecular weight Mw of resin S1 are shown below. In Table 1, the values ​​in the "Compound," "Catalyst," and "Solvent" columns represent the mass (g) of each compound, and the values ​​in the "Temperature / Time" column represent the reaction temperature (°C) and reaction time (hours).

[0285]

[0286]

[0287] Preparation of Composition for Forming Resist Underlayer Film Resin (S1), solvents (propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone (CYH)), and Megafac R-40 (manufactured by DIC Corporation, H1) as a surfactant were mixed in the proportions shown in Table 2 below, and the mixture was filtered through a 0.1 μm polytetrafluoroethylene microfilter to prepare a composition for forming a resist underlayer film (M1). The values ​​shown in Table 2 represent the weight percentage of the surfactant when the weight of the resin is taken as 100 parts, and the solvents represent the weight percentage of each solvent when the total weight of the solvent is taken as 100 wt%, independently of the weight of the resin. In Table 2, "-" indicates that the component is not contained.

[0288]

[0289] [Preparation of modified wafers by ion implantation] [Examples 1 to 7, Comparative Examples 1 and 2] The composition for forming a resist underlayer film M1 was applied to a silicon wafer using a coating device manufactured by Brewer Science and a hot plate, and baked at the predetermined temperature and for the predetermined time shown in Table 3 to form a resist underlayer film with a film thickness of approximately 65 nm or approximately 120 nm. Thereafter, a modification treatment was carried out using an ion implanter (NH-20SR-WHM manufactured by Nissin Electric Co., Ltd.) and Ar as the ion species under the predetermined conditions shown in Table 3. Furthermore, wafers were also prepared as Comparative Examples 1 and 2, omitting the ion implantation treatment described above.

[0290]

[0291] [Resist Solvent Dissolution Test] The resist underlayer films (Examples 1 to 7, Comparative Examples 1 and 2) before and after ion implantation treatment were immersed in a PGME / PGMEA mixed solution (mass ratio 7 / 3), a general-purpose thinner, for 60 seconds, spin-dried, and baked at 100°C for 30 seconds. The film thickness before and after immersion in the thinner was compared to confirm the solvent resistance. A film thickness reduction of 1% or less after immersion in the thinner was evaluated as "Good," and a film thickness reduction of more than 1% was evaluated as "Poor." The results are shown in Tables 4-1 and 4-2. The results for the resist underlayer films before ion implantation treatment were shown as "solvent resistance after baking."

[0292]

[0293]

[0294] As shown in Tables 4-1 and 4-2, when ion implantation was performed on a resist underlayer film that had once exhibited solvent resistance by baking, it was confirmed that the solvent resistance was maintained. Note that, in the subsequent evaluations, when the same polymer skeleton was used, the changes in the properties of the corresponding skeleton before and after the ion implantation treatment were compared.

[0295] [Raman Analysis] Raman analysis was performed on the resist underlayer films after ion implantation (Examples 1 to 7) and the resist underlayer films that were not subjected to ion implantation (Comparative Examples 1 and 2) using a DXR2 manufactured by Thermo FISHER SCIENTIFIC under the following measurement conditions. The ratio of SP2 carbon (Ig) to SP3 carbon (Id) before and after the ion implantation was calculated. The SP2 carbon and SP3 carbon were measured at 1900 to 1020 cm －１ In the range of 1540cm, the peak top －１ and 1340 cm －１ The area value was calculated by peak separation of the two peaks. －１ The area value of SP3 carbon is 1340 cm －１ The results are shown in Tables 5-1 and 5-2.

[0296] (Measurement conditions) The laser used for Raman measurement had a wavelength of 633 nm (2 mW) and a grating of 600 Lines / mm. The measurement range was 3500 to 250 cm. －１ The exposure time was 2 seconds, the number of integrations was 16, and Ig / Id was measured at 100 points and averaged.

[0297]

[0298]

[0299] [Measurement of Etching Rate] The resist underlayer films (Examples 1 to 7, Comparative Examples 1 and 2) before and after the ion implantation treatment were etched under the following conditions, the film thickness was calculated using a cross-sectional SEM, and the etching resistance was evaluated from the amount of remaining film. When the etching rate was slower than before the ion implantation treatment (when the etching resistance was higher), it was judged as "Good." The results are shown in Tables 6-1 and 6-2. In Tables 6-1 and 6-2, "x" in the etching rate column means that the ion implantation treatment was not performed, and therefore the etching rate is that of the resist underlayer film after baking at the specified temperature for the specified time shown in Table 3. <Etching Conditions> Ion implantation gas: tetrafluoromethane (CF ４ ), oxygen (O ２ ), Argon (Ar) Treatment time: 20 seconds

[0300] [Hardness Measurement] The resist underlayer films after ion implantation (Examples 1 to 7) and the resist underlayer films without ion implantation (Comparative Examples 1 and 2) were evaluated using a nanoscale multifaceted mechanical evaluation system (TI-980 triboindenter, manufactured by Bruker AXS). A Berkovich indenter (triangular pyramid) was used for the measurement, and evaluation was performed up to an indentation depth of 45 nm. The results are shown in Tables 6-1 and 6-2.

[0301] [Film Density Measurement] The film density of the resist underlayer films after ion implantation (Examples 1 to 7) and the resist underlayer films that were not subjected to ion implantation (Comparative Examples 1 and 2) was measured using a fully automatic multipurpose X-ray diffractometer (manufactured by RIGAKU Corporation, Smart Lab). The results are shown in Tables 6-1 and 6-2.

[0302]

[0303]

[0304] [Optical Constant Measurement] The refractive index (n value) and optical absorption coefficient (k value) of the resist underlayer films (Examples 4 to 7) after ion implantation treatment were measured at wavelengths of 193 nm and 633 nm using a vacuum ultraviolet multi-angle spectroscopic ellipsometer, VUV-VASE (registered trademark), manufactured by Woollam Japan. The results are shown in Table 7. In order to show the effect of the ion implantation treatment, the optical constants of a resist underlayer film (Comparative Example 2) that was not subjected to ion implantation treatment are also listed in the same table.

[0305]

Claims

1. An ion-implanted resist underlayer film comprising a resin (I) containing a structural unit represented by the following formula (1): (In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond.) 2. The ion-implanted resist underlayer film according to claim 1, wherein the resin (I) is a resin obtained by a reaction that forms a covalent bond between a carbon atom constituting the aromatic ring of the C in the formula (1) and a carbon atom of the D.

3. The ion-implanted resist underlayer film according to claim 1, wherein the intensity ratio Ig / Id of the G band to the D band as determined by Raman spectroscopy is 0.1 to 10.

0.

4. Film density is 1.0 to 2.5 g / cm ３ The ion-implanted resist underlayer film according to claim 1 , wherein 5. The ion-implanted resist underlayer film according to claim 1, wherein the refractive index at a wavelength of 193 nm is 1.3 to 2.5 or the optical absorption coefficient is 0.2 to 1.0, or the refractive index at a wavelength of 633 nm is 1.5 to 3.5 or the optical absorption coefficient is 0 to 0.

2.

6. A composition for forming a resist underlayer film for forming the ion-implanted resist underlayer film according to claim 1, comprising the resin (I) and a solvent.

7. The composition for forming a resist underlayer film according to claim 6, wherein the solvent comprises at least one selected from the group consisting of a carboxylic acid having a hydroxy group, a linear or cyclic alkyl ketone, a cyclic lactone, an alkylene glycol monoalkyl ether, a monocarboxylic acid ester of an alkylene glycol monoalkyl ether, and an alkoxycarboxylic acid ester of an alkylene glycol monoalkyl ether.

8. The composition for forming a resist underlayer film according to claim 6 or 7, wherein the solvent contains a solvent having a boiling point of 160°C or higher.

9. The composition for forming a resist underlayer film according to claim 6 or 7, further comprising at least one member selected from the group consisting of an acid, a salt thereof, and an acid generator.

10. The composition for forming a resist underlayer film according to claim 6 or 7, further comprising a crosslinking agent.

11. The composition for forming a resist underlayer film according to claim 6 or 7, further comprising a surfactant.

12. A method for producing an ion-implanted resist underlayer film, comprising: forming a coating film on a semiconductor substrate using a composition for forming a resist underlayer film; and subjecting the coating film to ion implantation treatment to form an ion-implanted resist underlayer film in which the intensity ratio Ig / Id of the G band to the D band measured by Raman spectroscopic analysis increases, the refractive index at a wavelength of 193 nm or 633 nm increases, or the optical absorption coefficient at a wavelength of 193 nm decreases, wherein the composition for forming a resist underlayer film comprises a resin (I) containing a structural unit represented by the following formula (1) and a solvent: (In formula (1), C represents a structure having an aromatic ring, D represents a structure having one or more carbon atoms, and * represents a bond.) 13. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the resin (I) is a resin obtained by a reaction that forms a covalent bond between a carbon atom constituting the aromatic ring of C in formula (1) and a carbon atom of D.

14. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the intensity ratio Ig / Id of the ion-implanted resist underlayer film after the ion implantation process is 1.01 times or more relative to the intensity ratio Ig / Id of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation process.

15. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the hardness of the ion-implanted resist underlayer film after the ion implantation process is 1.01 times or more the hardness of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation process.

16. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the film density of the ion-implanted resist underlayer film after the ion implantation process is 1.01 times or more the film density of the coating film, which is the pre-ion implantation resist underlayer film before the ion implantation process.

17. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the refractive index at a wavelength of 193 nm of the ion-implanted resist underlayer film after ion implantation is 1.01 times or more relative to the refractive index at a wavelength of 193 nm of the coating film, which is the pre-ion implantation resist underlayer film before ion implantation; or the optical absorption coefficient at a wavelength of 193 nm of the ion-implanted resist underlayer film after ion implantation is 0.99 times or less relative to the optical absorption coefficient at a wavelength of 193 nm of the coating film, which is the pre-ion implantation resist underlayer film before ion implantation; or the refractive index at a wavelength of 633 nm of the ion-implanted resist underlayer film after ion implantation is 1.01 times or more relative to the refractive index at a wavelength of 633 nm of the coating film, which is the pre-ion implantation resist underlayer film before ion implantation.

18. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the etching resistance of the ion-implanted resist underlayer film after ion implantation is 1.01 times or more the etching resistance of the coating film, which is the pre-ion implantation resist underlayer film before ion implantation.

19. The method for producing an ion-implanted resist underlayer film according to claim 12, wherein the gas used in the ion implantation process contains at least a rare gas, nitrogen, and hydrogen.

20. The method for producing an ion-implanted resist underlayer film according to claim 12, further comprising a step of baking the semiconductor substrate on which the ion-implanted resist underlayer film has been formed at 400°C or higher after the ion implantation process.

21. A laminate comprising: a semiconductor substrate; and the ion-implanted resist underlayer film according to any one of claims 1 to 5.

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