Translucent tandem solar cell

Abstract

The present disclosure provides a tandem solar cell. The tandem solar cell comprises an upper perovskite cell and a lower silicon cell. The upper perovskite cell includes: a first electrode formed on the lower silicon cell; a hole transport layer formed on the first electrode; a perovskite layer formed on the hole transport layer; a C60 layer formed on the perovskite layer; and a second electrode formed on the C60 layer, wherein the C60 layer has a thickness of 4 nm to 12 nm and the second electrode is an electrode that transmits light.

Description

Semitransparent tandem solar cells

[0001] The present disclosure relates to solar cells, and more particularly to tandem solar cells.

[0002] Although the efficiency of single-junction solar cells has continuously improved, the theoretical conversion efficiency limit of 33% due to the Shockley-Queisser (SQ) limit of single pin junction solar cells has been reached. To overcome the limitations of photoelectric conversion efficiency, the tandem solar cell approach, which stacks two or more layers of solar cell materials with different bandgaps, has been proposed among multi-junction solar cells and has shown continuous efficiency increases. In silicon / perovskite tandem solar cells, silicon absorbs well in the infrared and red region, while perovskite absorbs well in the other region, blue light.

[0003] Research is actively underway to improve the safety and efficiency of semitransparent perovskite solar cells, which can be applied to building windows and tandem solar cells to increase light utilization. To produce semitransparent perovskite solar cells, the metal electrodes of existing opaque solar cells must be replaced with transparent electrodes that transmit light. This process generates high-energy particles, which degrade the performance of the hole transport layer. The current highest efficiency in the semitransparent solar cell field is 21.68%, and safety is high, maintaining over 99% of the initial efficiency even after over 240 hours of operation. Furthermore, a bifacial tandem solar cell, which utilizes backlight by incorporating a semitransparent perovskite solar cell as the upper cell of the tandem solar cell, has recently been developed in Korea.

[0004] Currently, the fabrication of top-transparent perovskite cells is a key technology in the production of silicon / perovskite tandem solar cells. Most top-transparent perovskite cells have a pin structure, and in the case of tandem solar cells, light is incident from the top, so it enters the electron transport layer. Therefore, thickness optimization is crucial to minimize parasitic absorption of light in the electron transport layer. Most studies reported to date have the problem of directly applying the optimized electron transport layer structure of opaque device structures to develop top-transparent perovskite cells.

[0005] To solve the above problems, the present disclosure provides a highly efficient semitransparent silicon / perovskite tandem solar cell.

[0006] In order to solve the above problems, the present disclosure proposes optimized electron transport layer thickness conditions by elucidating that the behaviors according to the electron transport layer thickness in semitransparent and opaque device structures are completely different.

[0007] A silicon / perovskite tandem solar cell according to one embodiment of the present disclosure may include an upper perovskite cell and a lower silicon cell, wherein the upper perovskite cell includes a first electrode formed on the lower silicon cell, a hole transport layer formed on the first electrode, a perovskite layer formed on the hole transport layer, and a C formed on the perovskite layer. 60 Floor, C 60 It may include a second electrode formed on the layer C 60 The thickness of the layer is 4 nm to 12 nm, and the second electrode is an electrode that transmits light.

[0008] According to one embodiment of the present disclosure, the second electrode may include ITO (Indium-Tin-Oxide).

[0009] According to one embodiment of the present disclosure, C 60 It may further include a SnO2 layer formed on the layer.

[0010] According to one embodiment of the present disclosure, a surface treatment layer formed on the hole transport layer may be further included.

[0011] According to one embodiment of the present disclosure, the surface treatment layer may include a Self-Assembled Monolayer (SAM).

[0012] According to one embodiment of the present disclosure, the hole transport layer may include nickel oxide.

[0013] According to one embodiment of the present disclosure, the first electrode may include ITO (Indium-Tin-Oxide).

[0014] According to various embodiments of the present disclosure, a highly efficient semitransparent silicon / perovskite tandem solar cell can be provided. In particular, by elucidating that the behaviors depending on the electron transport layer thickness in semitransparent and opaque device structures are completely different, optimized electron transport layer thickness conditions can be designed.

[0015] The effects of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the present disclosure belongs (referred to as “one skilled in the art”) from the description of the claims.

[0016] Embodiments of the present disclosure will be described below with reference to the accompanying drawings, wherein like reference numerals represent similar elements, but are not limited thereto.

[0017] Figure 1 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to one embodiment of the present disclosure and a silicon / perovskite tandem solar cell including an opaque element according to a comparative example. 60 This is a diagram showing the results of measuring solar cell parameters (open circuit voltage, current density, fill factor, and photoelectric conversion efficiency) according to layer thickness.

[0018] FIG. 2 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to an embodiment of the present disclosure and a silicon / perovskite tandem solar cell including an opaque element according to a comparative example. 60 This is a diagram showing the JV curve under layer thickness conditions (8, 15 nm).

[0019] FIG. 3 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to one embodiment of the present disclosure. 60 This is a diagram showing the JV curves under layer thickness conditions (4, 8, 12, 15, 30 nm).

[0020] Hereinafter, specific details for implementing the present disclosure will be described in detail with reference to the attached drawings. However, in the following description, specific descriptions of widely known functions or configurations will be omitted if they may unnecessarily obscure the gist of the present disclosure.

[0021] In the attached drawings, identical or corresponding components are assigned the same reference numerals. Furthermore, in the description of the embodiments below, duplicate descriptions of identical or corresponding components may be omitted. However, even if a description of a component is omitted, it is not intended that such component is not included in any embodiment.

[0022] The advantages and features of the disclosed embodiments, and methods for achieving them, will become clearer with reference to the embodiments described below, along with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below and may be implemented in various different forms. These embodiments are provided solely to ensure the completeness of the disclosure and to fully inform those skilled in the art of the scope of the invention.

[0023] The terms used in this specification will be briefly explained, followed by a detailed description of the disclosed embodiments. The terms used in this specification have been selected from widely used, current terms, taking into account the functions of the present disclosure. However, these terms may vary depending on the intentions of engineers working in the relevant field, precedents, the emergence of new technologies, etc. Furthermore, in certain cases, terms may be arbitrarily selected by the applicant, and in such cases, their meanings will be described in detail in the relevant description of the invention. Therefore, the terms used in this disclosure should not be defined simply as names of terms, but rather based on their meanings and the overall content of the present disclosure.

[0024] In this specification, singular expressions include plural expressions unless the context clearly indicates otherwise. Furthermore, plural expressions include singular expressions unless the context clearly indicates otherwise. When a part of the specification is said to include a component, this does not exclude other components, but rather implies that other components may be included, unless otherwise specifically stated.

[0025] Throughout this specification, whenever a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise specifically stated.

[0026] The term "about" used throughout this specification is used to encompass the tolerance when there is a tolerance.

[0027] Throughout this specification, references to “A and / or B” mean “A or B, or A and B.”

[0028] Throughout this specification, “perovskite” or “PE” means a material having a perovskite crystal structure, which may have various perovskite crystal structures in addition to the ABX3 crystal structure.

[0029] Throughout this specification, the term "layer" refers to a layer having a thickness. The layer may be porous or non-porous. Porosity refers to having a void ratio. The layer may have a bulk form as a whole or may correspond to a single crystal thin film, but is not limited thereto.

[0030] Throughout this specification, when a member is said to be located "on" another member, unless otherwise specifically stated, this includes not only cases where the member is in contact with the other member, but also cases where another member exists between the two members.

[0031] Throughout this specification, where efficiency is simply described without further explanation, the efficiency may refer to power conversion efficiency (PCE).

[0032] In the case of a solar cell having a pin structure according to one embodiment of the present disclosure, the solar cell may basically have a structure in which a first electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a second electrode are sequentially stacked.

[0033] The electrode may include a first electrode and / or a second electrode, and may be an anode or a cathode. The upper perovskite cell of the silicon / perovskite solar cell according to one embodiment of the present disclosure has a pin structure. Accordingly, the first electrode formed on the lower silicon cell may be a cathode, and the second electrode may be an anode.

[0034] Typically, the electrode may be a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), or flourine-doped tin oxide (FTO). Alternatively, the electrode may include a material selected from the group consisting of silver (Ag), gold (Au), magnesium (Mg), aluminum (Al), platinum (Pt), tungsten (W), copper (Cu), molybdenum (Mo), nickel (Ni), palladium (Pd), chromium (Cr), calcium (Ca), samarium (Sm), and lithium (Li), and combinations thereof. Alternatively, the electrode may correspond to a flexible and transparent material such as plastic, such as polyethylene PET (polyethylene terephthalate), PEN (polyethylene naphthelate), PP (polyperopylene), PI (polyimide), PC (polycarbornate), PS (polystylene), POM (polyoxyethylene), etc., in which a conductive material is doped.

[0035] The electrode may correspond to a material commonly used as an electrode material in a solar cell. The electrode may be a material selected from one or more of gold, silver, platinum, palladium, copper, aluminum, carbon, cobalt sulfide, copper sulfide, nickel oxide, and compounds thereof. For example, the electrode may be one or more inorganic conductive electrodes selected from fluorine-doped tin oxide (FTO), indium-doped tin oxide (ITO), ZnO, carbon nanotubes (CNT), and graphene, or may correspond to an organic conductive electrode such as PEDOT:PSS.

[0036] A transparent electrode is an electrode with high electrical conductivity and optical transparency. Currently, the most widely used material for transparent electrodes is ITO. ITO has relatively high conductivity and high transmittance for use as a transparent electrode, and has excellent light transmission properties, especially in the visible light range. It is an oxide with excellent reflectivity in the infrared range, relatively low electrical resistance, and maintains a constant state at room temperature. In addition, tin oxide (SnO) that can be used as a transparent electrode x , Tin oxide) is cheaper than ITO and has excellent chemical durability, and an undoped pure tin oxide (SnO2) thin film exhibits a high transmittance of over 80% for visible light and near-infrared light.

[0037] The second electrode of the upper perovskite cell according to one embodiment of the present disclosure is a transparent conductive electrode (TCE) that transmits light, and the upper cell is a semitransparent element. For example, the second electrode may include at least one of ITO and SnO2. The first electrode of the upper perovskite cell according to one embodiment of the present disclosure may include ITO.

[0038] Meanwhile, the first electrode of the opaque upper perovskite cell according to the comparative example of the present disclosure may include ITO, and the second electrode may include Ag.

[0039] ITO can be formed through the sputtering process, a physical vapor deposition (PVD) method. Sputtering involves bombarding a target with high-energy ions at high speeds, depositing metal particles that then fall off.

[0040] As a charge transport layer, an electron transport layer (ETL) or a hole transport layer (HTL) may be formed on the first electrode. The upper perovskite cell of the silicon / perovskite solar cell according to one embodiment and a comparative example of the present disclosure has a pin structure. Accordingly, the hole transport layer may be formed on the first electrode of the upper perovskite cell, and the electron transport layer may be formed on the perovskite layer.

[0041] The electron transport layer may correspond to a semiconductor comprising an "n-type material." The "n-type material" refers to an electron transport material. The electron transport material may be a single electron transport compound or elemental material, or a mixture of two or more electron transport compounds or elemental materials. The electron transport compound or elemental material may be undoped or doped with one or more dopant elements.

[0042] In general, the electron transport layer can be an electron-conducting organic layer or an electron-conducting inorganic layer. The electron-conducting organic layer can be an organic layer used as an n-type semiconductor in a typical organic solar cell. For example, the electron-conducting organic layer can be a fullerene (C 60 , C 70 , C 74 , C 76 , C 78 , C 82 , C 95 ), PCBM([6,6]-phenyl-C 61 butyric acid methyl ester)) and C 71 -PCBM, C 84 -PCBM, PC70BM([6,6]-phenyl C 70-butyric acid methyl ester), PBI (polybenzimidazole), PTCBI (3,4,9,10-perylenetetracarboxylic bisbenzimidazole), F4-TCNQ (tetrafluorotetracyanoquinodimethane), or a mixture thereof.

[0043] The electron-conducting inorganic material may be an electron-conducting metal oxide used for electron transport in a typical quantum dot-based solar cell, dye-sensitized solar cell, or perovskite solar cell. The electron-conducting metal oxide may be an n-type metal oxide semiconductor. For example, the n-type metal oxide semiconductor may be a material selected from one or more of Ti oxide, Zn oxide, In oxide, Sn oxide, W oxide, Nb oxide, Mo oxide, Mg oxide, Ba oxide, Zr oxide, Sr oxide, Yr oxide, La oxide, V oxide, Al oxide, Y oxide, Sc oxide, Sm oxide, Ga oxide, In oxide, and SrTi oxide, a mixture thereof, or a composite thereof.

[0044] The electron transport layer may be a dense layer (dense film) or a porous layer (porous film). The dense electron transport layer may be a film of the electron-conducting organic material described above or a dense film of an electron-conducting inorganic material. The electron transport layer of the porous film may be a porous film composed of particles of the electron-conducting inorganic material described above.

[0045] Ultra-high-performance silicon / perovskite tandem solar cell technology requires a multi-junction structure that combines heterogeneous materials, surpassing the theoretical efficiency of silicon solar cells and developing a large-area commercialization process. Through the introduction of an electron transport layer and loss control technology that incorporates tin oxide, an efficiency of up to 25.2% (0.1 cm2) can be achieved. 2) can achieve cell efficiency. To achieve ultra-high efficiency, research on cell structure control, especially on controlling the thickness of the electron transport layer, is necessary.

[0046] To manufacture high-efficiency, large-area perovskite solar cell modules, the electron transport layer must be formed thinly and uniformly. A thinner layer allows better light transmission, enabling higher current values. However, an uneven electron transport layer can lead to efficiency losses during the manufacture of large-area modules.

[0047] An electron transport layer according to one embodiment of the present disclosure comprises C 60 C formed in the layer or bottom 60 It may be a SnO2 layer formed on the layer and the upper part. The electron transport layer according to the comparative example of the present disclosure is C 60 It is a structure that includes a layer and a block layer such as BCP (Bathocuproine). C 60 It has no large side chains and can be packed densely, which can facilitate intermolecular electron transport. In this study, C 60 The performance of solar cells is evaluated by controlling the thickness of the layers.

[0048] C 60 The electron transport layer can facilitate electron movement to the transparent electrode by having a LUMO at a lower energy level than the LUMO of the perovskite, and can block holes generated in the perovskite from moving to the second electrode by having a HOMO level lower than the HOMO of the perovskite.

[0049] These effects are C 60 There may be differences depending on the thickness of the layer. C 60 If the thickness of the layer is too thin, the effectiveness as a barrier layer may be reduced. Therefore, C 60 The layer must be deposited to a certain thickness or more. Also, C 60 If the layer becomes too thick, internal resistance to electron movement may occur.

[0050] C according to one embodiment and comparative example of the present disclosure 60 The layer can be formed by coating in the form of a film through vacuum thermal evaporation. Vacuum thermal evaporation is a physical vapor deposition (PVD) technique used to deposit a thin film on a substrate. In a vacuum, a precursor evaporates from a source and moves to the substrate, forming condensed nuclei to form a thin film coating. Therefore, C 60 The thickness of the layer can be adjusted.

[0051] According to one embodiment of the present disclosure, the SnO2 layer can be controlled in thickness at the atomic layer level by varying the number of deposition cycles through atomic layer deposition (ALD). Atomic layer deposition is a chemical vapor deposition (CVD) deposition method in which two or more precursor chemicals are alternately deposited on a substrate, and each precursor saturates the surface to form a single layer.

[0052] The hole transport layer may correspond to a semiconductor comprising a "p-type material." The "p-type material" refers to a hole transport material. The hole transport material may be a single hole transport compound or elemental material, or a mixture of two or more hole transport compounds or elemental materials. The hole transport compound or elemental material may be undoped or doped with one or more dopant elements. The hole transport material may be an organic hole transport material, an inorganic hole transport material, or a combination thereof.

[0053] The hole transport layer may be manufactured by a solution process. The hole transport layer may be a thin film of an organic hole transport material. Specifically, it may be a single molecule or polymer organic hole transport material (hole conducting organic material). The polymer organic hole transport material may include one or more materials selected from the group consisting of thiophene, paraphenylene vinylene, carbazole, and triphenylamine.

[0054] Materials widely used as hole transport layers in pin structure solar cells include nickel oxide (NiOx), poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), Spiro-MeOTAD (2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), poly-triarylamine derivatives, or poly-diketopyrrolopyrrole derivatives, copper thiocyanate (CuSCN), and copper iodide (CuI). These materials can prevent direct contact between ITO and the active layer and control the interface.

[0055] The hole transport layer according to one embodiment and comparative example of the present disclosure may be nickel oxide. In the case of silicon / perovskite solar cells, a pyramid-shaped light scattering layer on the surface of the lower silicon cell is essential for improving efficiency. However, this presents the greatest challenge of uniformly coating the charge transport layer of the upper pin-structured perovskite cell, which causes a decrease in efficiency.

[0056] To address this, a SAM can be introduced into nickel oxide. SAM refers to a regularly aligned monolayer that is spontaneously deposited on the surface of a given substrate. Because interfacial defects occur at the interface between the nickel oxide layer and the perovskite layer, where charges recombine, the introduction of a layer at the interface is required. SAM improves the surface defects of nickel oxide. For example, SAM materials can include ([2-(9H-carbazol-9-yl)ethyl]phosphonic acid) (2PACz) or ([2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid) (MeO-2PACz).

[0057] The perovskite layer can be formed through various processes, including a vapor deposition process or a solution process. The perovskite layer can be formed using a vapor deposition process. The vapor deposition process may correspond to a process in which a material is supplied in a vaporized or plasma state into a vacuum chamber and the material is deposited on the surface of a target object (e.g., a substrate). The perovskite layer can be formed through a coating process during the solution process. The coating process may be selected from the group consisting of, but is not limited to, spin coating, bar coating, nozzle printing, spray coating, slot die coating, gravure printing, inkjet printing, screen printing, electrohydrodynamic jet printing, electrospray, and combinations thereof.

[0058] For example, the perovskite may contain a monovalent organic cation, a divalent metal cation, and a halogen anion. In one embodiment, the perovskite of the present invention may satisfy the following chemical formula:

[0059] [Chemical Formula 1]

[0060] AMX3

[0061] In chemical formula 1, A is a monovalent cation, which may correspond to an organic ammonium ion, an amidinium group ion, or a combination of an organic ammonium ion and an amidinium group ion.

[0062] For example, an organic cation as A has the chemical formula (R1R2R3R4N) + may have. In this case, R1~R4 are hydrogen, unsubstituted or substituted C1-C 20 It may correspond to alkyl, or unsubstituted or substituted aryl.

[0063] For example, an organic cation as A has the chemical formula (R5NH3) +, wherein R5 is hydrogen, or substituted or unsubstituted C1-C 20 It may correspond to alkyl.

[0064] For example, an organic cation as A has the chemical formula (R6R7N=CH-NR8R9) + , and in this case, R6~R9 can correspond to hydrogen, methyl, or ethyl.

[0065] M can be a divalent metal ion. For example, M can be Cu 2+ , Ni 2+ , Co 2+ , Fe 2+ , Mn 2+ , Cr 2+ , Pd 2+ , Cd 2+ , Ge 2+ , Sn 2+ , Pb 2+ and Yb 2+ A metal cation selected from the group consisting of, but not limited to, and combinations thereof.

[0066] X may correspond to a halogen ion. For example, the halogen ion is I - , Br - , F - , Cl - and combinations thereof. Including, but not limited to, a halogen ion selected from the group consisting of:

[0067] For example, the perovskite may be one or a mixture of two or more selected from CH3NH3PbI3 (methylammonium lead iodide, MAPbI3) and CH(NH2)2PbI3 (formamidinium lead iodide, FAPbI3).

[0068] A semitransparent device according to one embodiment of the present disclosure comprises ITO / Nickel oxide / SAM / Perovskite / C on a lower silicon cell. 60 It is a structure that is stacked in the order of / SnO2 / ITO.

[0069] An opaque device according to a comparative example of the present disclosure comprises ITO / Nickel oxide / SAM / Perovskite / C on a lower silicon cell. 60 It is a structure that is stacked in the order of / BCP / Ag.

[0070] For optimizing the thickness of the electron transport layer according to one embodiment of the present disclosure, C 60 By varying the thickness of the layer, the main factors for evaluating the performance of solar cells, such as power conversion efficiency (PCE), fill factor (FF), and open circuit voltage (V), are evaluated. oc ), and current density were measured.

[0071] Figure 1 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to one embodiment of the present disclosure and a silicon / perovskite tandem solar cell including an opaque element according to a comparative example. 60 This is a diagram showing the results of measuring solar cell parameters (open circuit voltage, current density, fill factor, and photoelectric conversion efficiency) according to layer thickness. In the graph of Fig. 1, the x-axis is C 60 It indicates the thickness of the layer, with dark colors indicating opaque elements and light colors indicating translucent elements.

[0072] Opaque elements are C 60 While there is no significant difference in device characteristics depending on the thickness of the layer, the translucent device has C 60 The solar cell performance is optimized as the layer thickness increases from 3 nm to 8 nm, and C to 12, 15, and 30 nm. 60 As the thickness of the layer increases, the solar cell parameters, especially the filter, are significantly reduced, resulting in a deterioration in device performance.

[0073] FIG. 2 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to an embodiment of the present disclosure and a silicon / perovskite tandem solar cell including an opaque element according to a comparative example. 60 This is a diagram showing the JV curve under layer thickness conditions (8, 15 nm).

[0074] C in opaque elements 60 When the layer thickness was 15 nm, the current density according to voltage was slightly reduced compared to when the layer thickness was 8 nm. Meanwhile, in the semitransparent device, C 60 When the layer thickness is 15 nm, the current density according to voltage is significantly reduced compared to when the layer thickness is 8 nm. This allows the semitransparent device to have C, unlike the opaque device. 60 It can be seen that the device behavior changes significantly depending on the layer thickness. Therefore, for the translucent device, C shows the optimal performance. 60 To find the layer thickness, the current density was measured as a function of voltage at thicknesses of 4, 8, 12, 15, and 30 nm.

[0075] FIG. 3 is a C diagram of a silicon / perovskite tandem solar cell including a semitransparent element according to one embodiment of the present disclosure. 60 This is a diagram showing the JV curves under layer thickness conditions (4, 8, 12, 15, 30 nm).

[0076] The fill factor can be calculated as shown in the following chemical formula 1.

[0077] [Chemical Formula 1]

[0078] FF = (maximum voltage x maximum current) / (open circuit voltage x short-circuit current)

[0079] As can be seen in Figure 3, C 60 The fill factor is higher in a semitransparent device with a layer thickness of 8 nm than in a semitransparent device with a layer thickness of 4 nm, and C 60 As the layer thickness increases to 8, 12, 15, and 30 nm, the fill factor decreases rapidly. In addition, a phenomenon in which the series resistance of the semitransparent element increases significantly can be observed.

[0080] As a result, as can be seen in Figures 1 to 3, the performance of the C-type tandem solar cell with a semitransparent element is optimized. 60 It can be seen that the layer thickness is about 8 nm. Meanwhile, the opaque element is C 60 There is no significant change in device characteristics according to layer thickness.

[0081] The reason for this difference is C 60 It can be inferred that the resistance increases as the SnO2 layer is formed through atomic layer deposition (ALD) for the semitransparent process on the layer, and the ITO layer is formed through the sputtering process, and thus the device performance deteriorates as the thickness increases. On the other hand, in the case of the opaque device, C 60 As with the layers, BCP and Ag are deposited through vacuum thermal evaporation, so C 60 There appears to be no change in the characteristics of the layers.

[0082] Therefore, according to various embodiments of the present disclosure, a highly efficient semitransparent silicon / perovskite tandem solar cell can be provided. In particular, since it has been found that the behaviors according to the electron transport layer thickness in semitransparent and opaque device structures are completely different, it is possible to design optimized electron transport layer thickness conditions, so that a C with a thickness of about 8 nm can be provided. 60 An optimal semitransparent silicon / perovskite tandem solar cell having a layer can be provided.

[0083] The preceding description of the present disclosure is provided to enable any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to various modifications without departing from the spirit or scope of the present disclosure. Therefore, the present disclosure is not intended to be limited to the examples described herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

[0084] While the present disclosure has been described in connection with certain embodiments herein, various modifications and variations may be made without departing from the scope of the present disclosure, which would be apparent to those skilled in the art. Furthermore, such modifications and variations are intended to fall within the scope of the claims appended to this specification.

[0085] The above preferred embodiments of the present invention are disclosed for the purpose of illustration, and those skilled in the art with ordinary knowledge of the present invention will be able to make various modifications, changes, and additions within the spirit and scope of the present invention, and such modifications, changes, and additions should be considered to fall within the scope of the patent claims.

[0086] Anyone having ordinary skill in the art to which the present invention pertains can make various substitutions, modifications, and changes within the scope that does not depart from the technical spirit of the present invention, and therefore the present invention is not limited to the above-described embodiments and the attached drawings.

Claims

1. As a tandem solar cell, upper perovskite cell; and lower silicon cell Including, The upper perovskite cell is A first electrode formed on a lower silicon cell; A hole transport layer formed on the first electrode; A perovskite layer formed on the above hole transport layer; C formed on the perovskite layer 60 floor; and C above 60 Second electrode formed on the layer Including, C above 60 A tandem solar cell, wherein the thickness of the layer is 4 nm to 12 nm, and the second electrode is an electrode that transmits light.

2. In paragraph 1, A tandem solar cell wherein the second electrode comprises ITO (Indium-Tin-Oxide).

3. In paragraph 1, C above 60 A tandem solar cell further comprising a SnO2 layer formed on the layer.

4. In paragraph 1, A tandem solar cell further comprising a surface treatment layer formed on the hole transport layer.

5. In paragraph 4, A tandem solar cell, wherein the surface treatment layer comprises a SAM (Self-Assembled Monolayer).

6. In paragraph 1, A tandem solar cell, wherein the hole transport layer comprises nickel oxide.

7. In paragraph 1, A tandem solar cell, wherein the first electrode comprises ITO (Indium-Tin-Oxide).

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