Solar cell, photovoltaic module, electric device and power generation device

Abstract

The present application relates to a solar cell, a photovoltaic module, an electric device and a power generation device. The solar cell comprises: a substrate, a photovoltaic structure, a busbar structure and an encapsulation layer, wherein the photovoltaic structure comprises a first electrode layer, a light-absorbing layer and a second electrode layer that are stacked in sequence on the substrate; the busbar structure comprises a busbar, an isolation layer and a second insulating layer; a first body portion of the busbar is connected to the second electrode layer; the isolation layer is disposed on the substrate; a first insulating layer divides the photovoltaic structure into two sub-regions, which are respectively located on two sides of the first insulating layer; the two sub-regions are connected in parallel by means of the first body portion; the second insulating layer is wrapped around an internal segment of a lead-out terminal; the encapsulation layer is provided with a lead-out hole in which the internal segment of the lead-out terminal wrapped in the second insulating layer is located; and the projection of the lead-out hole on the substrate falls within the projection of the isolation layer on the substrate. In this way, the photoelectric performance stability of the solar cell is improved.

Description

Solar cell, photovoltaic module, electric device and power generation device

[0001] Related applications

[0002] The present application claims priority to the Chinese patent application No. 2024215195641 filed on June 28, 2024, and entitled "Solar cell, photovoltaic module, electric device and power generation device", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the technical field of battery, in particular to a solar cell, a photovoltaic module, an electric device and a power generation device. BACKGROUND

[0004] A solar cell is a new photovoltaic device that converts solar radiation energy directly into electrical energy by photovoltaic effect. Taking a perovskite solar cell as an example, it uses perovskite material as the light-absorbing layer, has the advantages of low cost, high weak light effect and wide application scenarios, and is an excellent choice for the new generation of mass-produced photovoltaic cells, which can alleviate the energy crisis. After the solar cell converts solar radiation energy into photogenerated current, a current collecting structure needs to be connected to an external circuit to collect the photogenerated current and output photogenerated voltage, so as to obtain electrical energy; meanwhile, an encapsulation layer is provided to encapsulate the battery device. The current solar cell has the problem of low stability of photovoltaic performance. Therefore, the traditional technology needs to be improved. SUMMARY

[0005] In order to achieve the above-mentioned purpose, the present application provides a solar cell, a photovoltaic module, an electric device and a power generation device capable of improving the stability of photoelectric performance.

[0006] The present application is achieved by the following technical solutions.

[0007] In a first aspect, the present application provides a solar cell, comprising:

[0008] a substrate;

[0009] a photovoltaic structure, the photovoltaic structure comprising a first electrode layer, a light-absorbing layer and a second electrode layer which are sequentially stacked on the substrate;

[0010] A current collecting structure, the photovoltaic structure and the current collecting structure are located on the same side of the substrate, the current collecting structure comprises a current collector, an insulation layer and a second insulation layer, the current collector comprises a first main body part, a second main body part and a lead-out end connected in sequence, the first main body part is connected with the second electrode layer, the insulation layer is arranged on the substrate, the insulation layer divides the photovoltaic structure into two sub-zones, the two sub-zones are located on two sides of the insulation layer respectively, the two sub-zones are connected through the first main body part, the lead-out end comprises an internal segment and an external segment connected with each other, and the second insulation layer is wrapped on the internal segment of the lead-out end; and

[0011] An encapsulation layer, the encapsulation layer and the substrate cooperate to form an encapsulation structure, the photovoltaic structure is located in the encapsulation structure, the encapsulation layer is provided with a lead-out hole, the internal segment of the lead-out end is located in the lead-out hole, and the external segment of the lead-out end is located outside the encapsulation layer; a projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is located in a projection of the insulation layer on the substrate along the thickness direction of the photovoltaic structure.

[0012] The above solar cell corresponds to the insulation layer below the position of the lead-out hole, the arrangement of the insulation layer avoids the damage of the current collector arranged on the photovoltaic structure to the functional layer of the photovoltaic structure, improves the stress stability of the solar cell, and also avoids the adverse effects of the heat generated by the arrangement of the photovoltaic structure on the stability of the insulation layer in long-term work. In addition, the lead-out hole is located at a position close to the middle of the encapsulation layer, which can facilitate the punching processing stability of the lead-out hole.

[0013] In some embodiments, the insulation layer is a first insulation layer, the first insulation layer is wrapped on the outer surface of the second body part and is located on the substrate, the first insulation layer divides the photovoltaic structure into two sub-zones, the two sub-zones are located on the two sides of the first insulation layer respectively, the two sub-zones are connected through the first body part, and the lead-out end includes a built-in segment and an external segment connected to each other; and a projection of the lead-out hole on the substrate in the thickness direction of the photovoltaic structure is located in a projection of the first insulation layer on the substrate in the thickness direction of the photovoltaic structure. In this way, the insulation layer is the first insulation layer, that is, the solar cell removes the photovoltaic structure below the position of the lead-out hole, that is, no photovoltaic structure is arranged at the position of the lead-out hole, the first insulation layer is directly arranged on the substrate at the position of the lead-out hole, and the second body part of the busbar is wrapped in the first insulation layer, and the lead-out end wrapped with the second insulation layer is also arranged in the lead-out hole, thereby increasing the water vapor blocking path of the first insulation layer and the second insulation layer, effectively blocking the contact between the functional layer of the photovoltaic structure and the water vapor, and further improving the water vapor blocking performance of the first insulation layer and the second insulation layer. Moreover, since the first insulation layer is directly arranged on the substrate, damage to the functional layer of the photovoltaic structure caused by arranging the first insulation layer on the photovoltaic structure is avoided, the stress stability of the solar cell is improved, and since no photovoltaic structure is arranged below the first insulation layer, the adverse effects of the insulation layer caused by the heat generated by the long-term operation of the photovoltaic structure arranged at this position on the stability of the first insulation layer are also avoided. In addition, the lead-out hole is located at a position close to the middle of the encapsulation layer, which can facilitate the stability of the punching processing of the lead-out hole. Therefore, the solar cell improves the structural stability of the solar cell through the coordination of water blocking performance, stress stability, and heat management, thereby improving the photoelectric performance stability of the solar cell.

[0014] In some embodiments, the insulation layer includes a partition layer, the partition layer includes one or more of the first electrode layer, the light-absorbing layer, and the second electrode layer which are sequentially stacked on the substrate, and the partition layer is isolated from the two sub-zones through a first isolation groove and a second isolation groove respectively.

[0015] In this way, the partition layer includes one or more of the first electrode layer, the light-absorbing layer, and the second electrode layer, which are similar to the photovoltaic structure, and can be prepared integrally, the solar cell is divided into two sub-zones and the partition layer arranged between the two sub-zones through the first isolation groove and the second isolation groove, and the preparation process is simplified.

[0016] In some embodiments, the first isolation groove and / or the second isolation groove are filled with an insulating material. In this way, the isolation capability of the first isolation groove and / or the second isolation groove can be improved, the influence of water vapor on the two sub-zones is reduced, and the risk of short-circuit contact between the partition layer and the two sub-zones is also reduced.

[0017] In some embodiments, one of the partitions, the partition layer and the other partition are arranged in the second direction in sequence, and the solar cell satisfies one or more of the following conditions:

[0018] (1) the partition layer is consistent with the layer structure of the photovoltaic structure in the thickness direction;

[0019] (2) the size of the first isolation groove and the second isolation groove in the second direction is independently 10 μm-30 μm;

[0020] (3) the insulation layer further comprises a fourth insulating layer arranged between the second main body part and the partition layer.

[0021] In some embodiments, the two partitions are connected in series or in parallel through the first main body part. In this way, two partitions can be connected in series through the first main body part to increase the output voltage of the solar cell, or two partitions can be connected in parallel through the first main body part to increase the output current of the solar cell.

[0022] In some embodiments, the projection area of the lead-out hole on the substrate in the thickness direction of the photovoltaic structure is less than the projection area of the insulation layer on the substrate in the thickness direction of the photovoltaic structure. In this way, the water vapor path of the insulation layer is further increased.

[0023] In some embodiments, in a transverse plane perpendicular to the thickness direction of the photovoltaic structure, the shortest distance between the edge of the insulation layer and the hole wall of the lead-out hole is x, x>0. In this way, the water vapor path of the insulation layer is further increased.

[0024] In some embodiments, the depth of the lead-out hole is h, and x and h satisfy the following condition: x+h≥5mm.

[0025] In some embodiments, one or more of the following conditions are satisfied:

[0026] (1) 2mm≤h≤10mm;

[0027] (2) 3mm≤x≤40mm.

[0028] In some embodiments, 10mm≤x+h≤50mm.

[0029] In some embodiments, one or more of the following conditions are satisfied:

[0030] (1) 2mm≤h≤5mm;

[0031] (2) 3mm≤x≤8mm;

[0032] (3) 10mm ≤ x+h ≤ 13mm.

[0033] Thus, the range of x+h is controlled, further increasing the water vapor blocking path of the insulation layer and the second insulation layer, which can effectively hinder the contact between the photovoltaic structure functional layer and water vapor, and further improve the water vapor blocking performance of the insulation layer and the second insulation layer. Further, by adjusting the range of x+h, on the one hand, the water vapor blocking performance of the solar cell can be improved, and on the other hand, the area of the insulation layer can be controlled, the dead area of the solar cell is reduced, and the influence on the output power of the solar cell is reduced.

[0034] In some embodiments, the insulation layer is connected with the substrate and the encapsulation layer respectively. Thus, the insulation layer can play a good role in buffering stress and preventing water vapor at the lead-out hole.

[0035] In some embodiments, one or more of the following conditions is met:

[0036] (1) the total thickness of the first insulation layer is 0.20mm-0.80mm;

[0037] (2) the thickness of the second main part is 0.03mm-0.25mm.

[0038] In some embodiments, the total thickness of the partition layer is 0.0010mm-0.80mm.

[0039] In some embodiments, the photovoltaic structure includes a plurality of sub-cells arranged in a first direction in sequence, the insulation layer is arranged along the first direction, the first direction is perpendicular to the second direction; and one or more of the following conditions is met:

[0040] (1) the length of the insulation layer in the first direction is greater than or equal to the total length of the plurality of sub-cells in the first direction;

[0041] (2) the width of the insulation layer in a direction perpendicular to the first direction is less than the length of the insulation layer in the first direction.

[0042] Thus, by controlling the length of the insulation layer in the first direction to be greater than or equal to the total length of the plurality of sub-cells in the first direction, a better insulation effect is achieved to prevent short circuit between the sub-cells. By controlling the width of the insulation layer in a direction perpendicular to the first direction to be less than the length of the insulation layer in the first direction, the dead area can be effectively reduced.

[0043] In some embodiments, the distance between the two edges of the insulation layer in the direction perpendicular to the first direction and the hole wall of the lead-out hole is equal, and the width w of the insulation layer in the direction perpendicular to the first direction, the aperture of the lead-out hole, and the depth h of the lead-out hole satisfy the following conditions:

[0044] In some embodiments, the insulation layer and the second insulation layer each independently comprise one or more of a butyl rubber layer, a polyisoprene layer, a TPO hot melt adhesive layer, a glass melt layer, and a polyolefin elastomer hot melt adhesive layer. In this way, the above-mentioned materials can achieve insulation and water blocking effects.

[0045] In some embodiments, the current collecting structure further comprises a third insulation layer disposed on the surface of the encapsulation layer away from the substrate and arranged around the lead-out end, and the projection of the lead-out hole on the substrate in the photovoltaic structure thickness direction is within the projection of the third insulation layer on the substrate in the photovoltaic structure thickness direction. In this way, the third insulation layer can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water blocking performance.

[0046] In some embodiments, the projection area of the third insulation layer on the substrate in the photovoltaic structure thickness direction is greater than the projection area of the lead-out hole on the substrate in the photovoltaic structure thickness direction. In this way, the projection area of the third insulation layer on the substrate is greater than the projection area of the lead-out hole on the substrate, which can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water blocking performance.

[0047] In some embodiments, the solar cell comprises at least two current collecting members, and the first main body part of each of the at least two current collecting members is connected to the positive electrode or the negative electrode of the photovoltaic structure.

[0048] In some embodiments, the light absorbing layer comprises a perovskite light absorbing layer. In this way, the solar cell is a perovskite solar cell.

[0049] The second aspect of the present application provides a photovoltaic module comprising the solar cell provided by the first aspect of the present application.

[0050] The third aspect of the present application provides an electricity consuming device comprising at least one selected from the solar cell provided by the first aspect of the present application and the photovoltaic module provided by the second aspect of the present application.

[0051] The fourth aspect of the present application provides a power generating device comprising at least one selected from the solar cell provided by the first aspect of the present application and the photovoltaic module provided by the second aspect of the present application. ​

[0052] The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the application will be apparent from the description and drawings, and from the claims. BRIEF DESCRIPTION OF DRAWINGS

[0053] In order to more clearly illustrate the technical solutions in the embodiments of the present application or in the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative effort on the basis of the disclosed drawings.

[0054] Fig. 1 is a schematic diagram of a partial cross-sectional structure of a solar cell along a first direction F1 at a lead-out hole according to an embodiment of the present application.

[0055] Fig. 2 is a schematic diagram of a partial cross-sectional structure of the solar cell along a vertical direction F2 at the lead-out hole according to the embodiment of the present application.

[0056] Fig. 3 is a schematic diagram of a power consumption device using the solar cell as a power source according to another embodiment of the present application.

[0057] Fig. 4 is a schematic diagram of P4 scribe lines of a clean edge region according to Embodiment 1 of the present application.

[0058] Fig. 5 is a schematic diagram of a top view structure after the clean edge processing of step (7.1) according to Embodiment 1 of the present application.

[0059] Fig. 6 is a schematic diagram of a top view structure after step (7.2) according to Embodiment 1 of the present application.

[0060] Fig. 7 is a schematic diagram of a top view structure after setting a longitudinal bus bar of step (7.3) according to Embodiment 1 of the present application.

[0061] Fig. 8 is a schematic diagram of a top view structure after setting a transverse bus bar of step (7.3) according to Embodiment 1 of the present application.

[0062] Fig. 9 is a schematic diagram of an equivalent circuit of a photovoltaic structure obtained in step (7.3) according to Embodiment 1 of the present application.

[0063] Fig. 10 is a schematic diagram of a top view structure of a bus bar structure according to another embodiment of the present application.

[0064] Fig. 11 is a schematic diagram of a top view structure after step (7.4) according to Embodiment 1 of the present application.

[0065] Fig. 12 is a schematic diagram of a top view structure after step (7.5) according to Embodiment 1 of the present application.

[0066] Fig. 13 is a schematic diagram of a top view structure after step (7.6) according to Embodiment 1 of the present application.

[0067] Fig. 14 is a P4 scribe line schematic diagram of the edge clear region in the present application comparative example 1.

[0068] Fig. 15 is a top view schematic diagram of the structure after step (7.1) in the present application comparative example 1.

[0069] Fig. 16 is a cross-sectional structure schematic diagram of the solar cell prepared in the present application comparative example 1 at the lead-out hole.

[0070] Fig. 17 is a partial cross-sectional structure schematic diagram of the solar cell along direction F2 in another embodiment of the present application.

[0071] Legend of reference numerals: 1, solar cell; 110, substrate; 120, photovoltaic structure; 130, bus structure; 140, encapsulation layer; 150, buffer adhesive layer; 160, edge sealing butyl adhesive tape; 121, first electrode layer; 122, light absorbing layer; 123, second electrode layer; 124, first transport layer; 125, second transport layer; 131, bus member; 1311, first main body part; 1312, second main body part; 1313, lead-out end; 132, isolation layer; 1321, first layer butyl adhesive tape; 1322, second layer butyl adhesive tape; 133, second insulation layer; 134, third insulation layer; 1314, third bus bar; 1321, first insulation layer; 1322, partition layer; 13221, first isolation groove; 13222, second isolation groove; 1323, fourth insulation layer; 2, electric device. DETAILED DESCRIPTION

[0072] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work, fall within the scope of protection of the present application.

[0073] "ranges" disclosed herein can be defined, for example, by the lower and upper values. Any lower limit can independently be combined with any upper limit to define a range of any value. For example, if a range of 60-120 and 80-110 is listed, it is understood that a range of 60-110 and 80-120 is also contemplated. Furthermore, if a minimum range value of 1 and 2 is listed, and if a maximum range value of 3, 4, and 5 is also listed, then the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In this application, the use of "a" or "an" to describe a single item can be taken as a non-limiting term that means "one or more." Unless otherwise noted, the use of the singular includes the plural. The use of "or" means "and / or," unless otherwise noted. The use of the term "including" as well as other forms for, e.g., "include," "includes," "included," and "includes," is intended to cover a non-exclusive inclusion, such that any process or method that includes several steps can consist of those steps only, or of those steps in combination with one or more stated or implied steps. In this application, expressions of

[0074] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. "A" or "an" means "one or more" in reference to an element which can exist more than one at a time. For example, "a" or "an" can mean one or more but not all of something. It is also to be noted that single reference signs can be used with different series of embodiments unless otherwise specified.

[0075] All embodiments and optional embodiments of the present application can be combined with each other to form new technical solutions, if not specifically stated otherwise.

[0076] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment or implementation of the application. The appearance of the phrase in various places in the specification is not necessarily all referring to the same embodiment, or to the same alternative embodiment, or to a particular embodiment or alternative embodiment. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments. Reference herein to "an implementation" has a similar understanding.

[0077] Those skilled in the art can understand that the order of writing each step in the method of each embodiment or example does not mean a strict execution order and does not constitute any limitation on the implementation process. The detailed execution order of each step should be determined by its function and possible internal logic. If not specifically stated, all steps of the present application can be performed in sequence or randomly, preferably in sequence. For example, the method comprises steps (a) and (b), which means that the method can comprise steps (a) and (b) performed in sequence, or steps (b) and (a) performed in sequence. For example, the method also comprises step (c), which means that step (c) can be added to the method in any order, for example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0078] In the present application, A (such as B) means that B is one non-limiting example of A, and it can be understood that A is not limited to B.

[0079] In the present application, "optionally", "optional" and "optional" mean that it can or can not be present, i.e. it means to select from "have" or "not have" two parallel schemes. If there are multiple "options" in a technical solution, each "option" is independent of each other unless otherwise stated, and there is no contradictory relationship or mutual restriction.

[0080] Please refer to FIG. 1 and FIG. 2, the first aspect of the present application provides a solar cell 1, comprising a substrate 110, a photovoltaic structure 120, a busbar structure 130 and an encapsulation layer 140.

[0081] Please continue to refer to FIG. 2, the photovoltaic structure 120 comprises a first electrode layer 121, a light-absorbing layer 122 and a second electrode layer 123 which are sequentially stacked on the substrate 110. It can be understood that the photovoltaic structure 120 comprises a plurality of sub-cells divided by a channel group.

[0082] Please continue to refer to FIG. 1, the photovoltaic structure 120 and the busbar structure 130 are located on the same side of the substrate 110. The busbar structure 130 comprises a busbar 131, an insulation layer 132 and a second insulation layer 133. The busbar 131 comprises a first main body 1311 (see FIG. 7 and FIG. 8), a second main body 1312 and a lead-out end 1313 which are sequentially connected, the first main body 1311 is connected with the second electrode layer 123 (see FIG. 7 and FIG. 8), the insulation layer 132 is arranged on the substrate 110, the lead-out end 1313 comprises an internal segment and an external segment connected with each other, and the second insulation layer 133 wraps the internal segment of the lead-out end 1313.

[0083] Please refer to FIG. 2, the lead-out hole is located near the middle of the encapsulation layer 140, and the isolation layer 132 is located in the middle of the photovoltaic structure 120. Further, the encapsulation layer 132 is arranged to divide the photovoltaic structure 120 into two sub-zones, and the two sub-zones are located on the two sides of the isolation layer 132, respectively. One sub-zone, the isolation layer 132 and the other sub-zone are arranged in the second direction F3 in sequence, and the two sub-zones are connected through the first main body part 1311.

[0084] It can be understood that the lead-out hole can be located near the two ends of the encapsulation layer 140 or near the middle of the encapsulation layer 140, and the current generated by the photovoltaic structure can be led out to the external circuit. In one embodiment, the lead-out hole is located near the middle of the encapsulation layer 140, which is convenient for the punching processing stability of the lead-out hole. In another embodiment, the lead-out hole is located near the two ends of the encapsulation layer 140. When the lead-out hole is two or more, taking two as an example, the lead-out hole located near the two ends of the encapsulation layer 140 can be that the two lead-out holes are located on different sides of the two ends of the encapsulation layer 140. At this time, the external section led out by the lead-out hole can be led out through a split junction box. Alternatively, the two lead-out holes can be located on the same side of the two ends of the encapsulation layer 140. At this time, the external section led out by the lead-out hole can be led out through a centralized junction box.

[0085] It can be further understood that the isolation layer 132 located in the middle of the photovoltaic structure 120 means that the first insulating layer can divide the photovoltaic structure 120 into two sub-zones. The isolation layer 132 can divide the photovoltaic structure 120 into two sub-zones with the same area or different areas, and the two sub-zones are connected through the first main body part 1311.

[0086] In addition, the arrangement of the isolation layer 132 can effectively reduce the edge cleaning area and at the same time obtain good water vapor blocking performance, so that good photoelectric conversion efficiency and device stability can be obtained at the same time.

[0087] The encapsulation layer 140 and the substrate 110 cooperate to form an encapsulation structure. The photovoltaic structure 120 and the bus structure 130 are arranged such that the lead-out end 1313 is located in the encapsulation structure, and the encapsulation layer 140 is provided with a lead-out hole (not marked in the figure). The built-in section of the lead-out end 1313 wrapped by the second insulating layer 133 is located in the lead-out hole, and the external section of the lead-out end 1313 is located outside the encapsulation layer 140. The projection of the lead-out hole on the isolation layer 132 is located in the isolation layer 132; in other words, the projection of the lead-out hole on the substrate 110 in the thickness direction of the photovoltaic structure is located in the projection of the isolation layer 132 on the substrate 110 in the thickness direction of the photovoltaic structure. That is, the projection of the lead-out hole on the substrate 110 in the thickness direction of the photovoltaic structure does not exceed the outer contour of the projection of the isolation layer 132 on the substrate 110 in the thickness direction of the photovoltaic structure.

[0088] Understandably, since the lead-out hole is opened in the thickness direction of the encapsulation layer 140 and penetrates the encapsulation layer 140, generally, the depth h of the lead-out hole is the same as the thickness of the encapsulation layer 140.

[0089] The above solar cell 1 corresponds to the insulating layer 132 below the position of the lead-out hole, and the setting of the insulating layer 132 avoids the damage of the functional layer of the photovoltaic structure 120 by the setting of the busbar 131 on the photovoltaic structure 120, improves the stress stability of the solar cell 1, and also avoids the setting of the photovoltaic structure 120 at this position to cause the heat generated in the long-term work to cause the aging of the insulating layer and other adverse effects on the stability of the insulating layer. In addition, the lead-out hole is located at the position close to the middle of the encapsulation layer 140, which can facilitate the stability of the lead-out hole punching processing.

[0090] The insulating layer here refers to a region that can electrically isolate two partitions, that is, the two partitions cannot realize electrical communication by contacting the insulating region. The insulating layer can be an insulating material, or a structure formed by insulating or spatially separating the two partitions, as long as it can realize the electrical isolation of the two partitions, which is not limited here.

[0091] In some embodiments, the barrier layer 132 is a first insulating layer 1321, which is wrapped on the outer surface of the second body part 1312 and on the substrate 110, and which divides the photovoltaic structure 120 into two sub-zones on the two sides of the first insulating layer 1321, and connects the two sub-zones through the first body part 1311. The lead-out hole projects on the substrate 110 in the thickness direction of the photovoltaic structure 120 within the projection of the first insulating layer 1321 on the substrate 110 in the thickness direction of the photovoltaic structure 120. The above solar cell 1 removes the photovoltaic structure 120 below the position of the lead-out hole, i.e., does not arrange the photovoltaic structure 120 at the position of the lead-out hole, directly arranges the first insulating layer 1321 on the substrate 110 at the position of the lead-out hole, and wraps the second body part 1312 of the busbar 131 in the first insulating layer 1321, and also arranges the lead-out end 1313 wrapped with the second insulating layer 133 in the lead-out hole, thereby increasing the water vapor blocking path of the first insulating layer 1321 and the second insulating layer 133, effectively blocking the contact between the functional layer of the photovoltaic structure 120 and water vapor, and further improving the water vapor blocking performance of the first insulating layer 1321 and the second insulating layer 133. Moreover, since the first insulating layer 1321 is directly arranged on the substrate 110, the damage of the functional layer of the photovoltaic structure 120 caused by arranging the first insulating layer 1321 on the photovoltaic structure 120 is avoided, the stress stability of the solar cell 1 is improved, and since the photovoltaic structure 120 is not arranged below the first insulating layer 1321, the adverse effects of the long-term working heat generated by the photovoltaic structure 120 arranged at this position on the stability of the first insulating layer 1321, such as the aging of the insulating layer, are also avoided. Therefore, the solar cell 1 improves the structural stability of the solar cell 1 through the coordination of the water blocking performance, stress stability, and heat management, and further improves the photoelectric performance stability of the solar cell 1.

[0092] It can be understood that the first insulating layer 1321 is directly arranged on the substrate 110. In one embodiment, the first insulating layer 1321 is directly in contact with the substrate 110, which is simple and convenient to operate, and only needs to arrange the first insulating layer after removing the photovoltaic structure on the corresponding substrate. In another embodiment, other layers, such as a water blocking functional layer, can be arranged between the first insulating layer and the substrate.

[0093] In some embodiments, the components of the first insulating layer 1321 and the second insulating layer 133 each independently include at least one of butyl glue, polyisoprene, TPO hot melt glue, POE (polyolefin elastomer) hot melt glue, and glass melt.

[0094] Further, the first insulating layer 1321 and the second insulating layer 133 each independently comprises one or more of a butyl rubber layer, a polyisoprene layer, a TPO hot melt adhesive layer, a glass frit layer, and a polyolefin elastomer hot melt adhesive layer.

[0095] Herein, when a plurality of objects are each independently, it means that each of the plurality of objects can be independently selected without affecting each other, and can be the same or different. The materials of the first insulating layer 1321 and the second insulating layer 133 can be the same or different.

[0096] Further, the POE hot melt adhesive includes but is not limited to ethylene-alpha-octene copolymer. Further, the glass frit is a fine powder low-temperature melting point glass which softens and flows to form a seal or coating when heated at low temperature; further, the melting point of the glass frit is lower than 160°C and can be selected to be lower than 100°C, and laser-assisted rapid melting can be used when melting.

[0097] Compared with epoxy resin and silicone glue, butyl rubber, polyisoprene, TPO hot melt adhesive, POE (polyolefin elastomer) hot melt adhesive, and glass frit have lower WVTR (water vapor transmission rate), that is, better water vapor barrier performance.

[0098] Among them, although the butyl rubber, polyisoprene and other materials have relatively better water vapor barrier performance, the viscosity is high and the texture is hard. If the first insulating layer 1321 formed by these materials is directly arranged on the photovoltaic structure 120 functional layer such as the light-absorbing layer 122, it will cause initial damage to the photovoltaic structure 120 during lamination. In addition, the coefficient of thermal expansion between these materials and the functional layer of the photovoltaic structure 120 does not match, and the stress concentration cannot be dispersed, which will cause the decomposition of the perovskite layer and other light-absorbing layers 122, affecting the stability of the solar cell 1. In addition, if the photovoltaic structure 120 is arranged at the position of the lead-out hole, the heat generated by the long-term work of the photovoltaic structure 120 will cause heat accumulation, resulting in poor heat dissipation, and ultimately leading to the decline of the stability of the solar cell 1. Since the first insulating layer 1321 in the present application is directly arranged on the substrate 110, there is no problem of the decline of the stability of the solar cell 1 caused by the initial damage to the photovoltaic structure 120 during lamination, stress concentration and heat accumulation, so the solar cell 1 can have good photoelectric performance stability.

[0099] In some embodiments, the first insulating layer 1321 and the second insulating layer 133 are each independently a black insulating layer, which is consistent with the color of the backsheet of the solar cell 1, can increase the aesthetic appearance, and also can absorb some ultraviolet rays to protect the components on the back.

[0100] As an example, the first insulating layer 1321 is a butyl rubber layer or a polyisoprene layer, and can also include a composite insulating layer of both butyl rubber and polyisoprene. As an example, the second insulating layer 133 is a butyl rubber layer or a polyisoprene layer, and can also include a composite insulating layer of both butyl rubber and polyisoprene. Such materials not only have good water vapor barrier properties, but also ensure the color consistency of the backsheet of the solar cell 1, have strong aesthetics, and can also absorb some ultraviolet rays to protect the components on the back.

[0101] In some embodiments, the components of the first insulating layer 1321 can also optionally include a desiccant. Further, the components of the second insulating layer 133 can also optionally include a desiccant. The components of the desiccant can be common agents that can absorb moisture, including but not limited to one or more of physical desiccants such as molecular sieves, porous nanosilicon, etc., and reactive desiccants such as desiccant calcium oxide, anhydrous calcium dichloride, etc.

[0102] In other embodiments, the insulating layer 132 includes a partition layer 1322 (see FIG. 17), which includes one or more of the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123 stacked in sequence on the substrate 110, and the partition layer 1322 is isolated from the two sub-zones by the first isolation groove 13221 and the second isolation groove 13222, respectively.

[0103] The partition layer 1322 includes one or more of the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123, and the partial layer structure of the partition layer 1322 is the same as the partial layer structure of the photovoltaic structure 120, so that the two sub-zones of the photovoltaic structure 120 and the partition layer 1322 can be integrally prepared, simplifying the process. It can be further understood that the materials and thicknesses of the corresponding functional layers of the partition layer 1322 can be the same as those of the corresponding functional layers of the photovoltaic structure 120, or can be different, which is not limited here.

[0104] It can be understood that the partition layer 1322 can include any one of the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123, or can include two or three of the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123, which is not limited here. It can be further understood that in the case where the photovoltaic structure 120 includes other functional layers, the partition layer 1322 can include or not include the functional layer. Further, the layer structure of the partition layer 1322 is consistent with the layer structure of the photovoltaic structure 120, so that the formation of the layer structure of the partition layer 1322 and the photovoltaic structure 120 can be simultaneously achieved, simplifying the process difficulty.

[0105] It can be understood that the first isolation groove 13221 and the second isolation groove 13222 isolate the partition layer 1322 from the two partitions, forming a structure in which the partitions, the partition layer 1322, and the partitions are sequentially distributed. The first isolation groove 13221 and the second isolation groove 13222 divide the layer structure of the two partitions and the layer structure of the partition layer 1322, so that the two partitions and the layer structure of the partition layer 1322 are isolated. For example, in the case where the partition layer 1322 includes the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123 arranged in layers, the first isolation groove 13221 and the second isolation groove 13222 respectively divide the partition layer 1322 in the region connecting the two partitions, that is, divide the first electrode layer 121, the light-absorbing layer 122, and the second electrode layer 123, to achieve the isolation of the two partitions by the partition layer 1322. In this way, the photovoltaic structure 120 at the two partitions is not in electrical communication with the partition layer 1322. At this time, the partition layer serves as an ineffective photovoltaic structure, avoiding the placement of the second main body portion 1312 on the photovoltaic structure 120 to avoid damage to the functional layers of the photovoltaic structure 120 caused by the position of the second main body portion 1312 during lamination, thereby improving the stress stability of the solar cell 1. At the same time, the placement of the ineffective photovoltaic structure also avoids the adverse effects of the long-term operation of the photovoltaic structure 120 at this location, which generates heat and causes the insulation layer to age, thereby affecting the stability of the solar cell 1. Therefore, the solar cell 1 improves the structural stability of the solar cell 1 through structural improvements in terms of water-blocking performance, stress stability, and heat management, thereby improving the photoelectric performance stability of the solar cell 1.

[0106] In some embodiments, the first isolation groove 13221 and / or the second isolation groove 13222 is filled with an insulating material. In this way, the isolation capability of the first isolation groove 13221 and / or the second isolation groove 13222 can be improved, which can reduce the influence of water vapor on the two partitions and reduce the risk of short-circuit contact between the partition layer 1322 and the two partitions, thereby improving the stability of the solar cell 1.

[0107] In some embodiments, the insulating material includes a solid insulating material, an organic insulating material, or an inorganic insulating material. For example, the organic insulating material can include one or more of butyl glue, polyisoprene, TPO hot melt glue, POE (polyolefin elastomer) hot melt glue, epoxy resin, etc. The inorganic insulating material can include silicon boron, glass melt, and various metal oxides, etc. The inorganic insulating material can also include inorganic solids with an ionic structure, inorganic solids mainly in the form of ionic structure, etc. Further, the components of the insulating material can also optionally include a desiccant. The components of the desiccant can be common agents that can absorb moisture, including but not limited to one or more of physical desiccants such as molecular sieves, porous nanosilicon, etc., and reactive desiccants such as desiccant calcium oxide, anhydrous calcium dichloride, etc.

[0108] In some embodiments, the one partition, the partition layer 1322 and the other partition are arranged in the second direction F3 in sequence, and the first isolation groove 13221 and the second isolation groove 13222 each independently has a size in the second direction F3 of 10 μm to 30 μm. It can be 10 μm, 13 μm, 15 μm, 18 μm, 20 μm, 25 μm, 27 μm, 30 μm, or a range of values formed by the above values. The width of the first isolation groove 13221 and the second isolation groove 13222 is set to facilitate the isolation effect while minimizing the reduction of the effective power generation area of the photovoltaic structure.

[0109] In some embodiments, the isolation layer 132 further comprises a fourth insulating layer 1323 arranged between the second main body part 1312 and the partition layer 1322. The arrangement of the fourth insulating layer 1323 helps to avoid contact between the second main body part 1312 and the partition layer 1322, so as to avoid the overall short circuit and failure of the solar cell 1 caused by the short circuit between the partition layer 1322 and the partition.

[0110] In some embodiments, the two partitions are connected in series or in parallel through the first main body part 1311. In one embodiment, the sub-cells in each partition are connected in series, and the two partitions are connected in parallel, thereby forming a circuit in series-parallel connection, as shown in FIGS. 8 and 9. In another embodiment, the sub-cells in each partition are connected in series, and the two partitions are connected in series, thereby forming a circuit in series connection. In the embodiment of series connection between the two partitions, the channel groups of the sub-cells in the two partitions divided by the channel groups can be channel groups in the same direction (the channel groups of the two partitions are both in the direction of P1→P2→P3), or can be channel groups in opposite directions (the channel groups of the two partitions are respectively in the direction of P1→P2→P3 and the direction of P3→P2→P1). It can be further understood that the sub-cells in each partition can also be connected in series-parallel connection or other connection modes, which can be selected according to actual needs by those skilled in the art.

[0111] In some embodiments, in the case where the isolation layer 132 is the first insulating layer 1321, the area of the first insulating layer 1321 is greater than the projection area of the lead-out hole on the first insulating layer 1321. In other words, the projection area of the lead-out hole on the substrate 110 in the thickness direction of the photovoltaic structure is smaller than the projection area of the first insulating layer 1321 on the substrate 110 in the thickness direction of the photovoltaic structure. This further increases the water vapor blocking path of the first insulating layer 1321. In some other embodiments, in the case where the isolation layer 132 comprises the partition layer 1322, the area of the partition layer 1322 is greater than the projection area of the lead-out hole on the partition layer 1322. This further increases the water vapor blocking path of the partition layer 1322.

[0112] Further, in the case that the isolation layer 132 is the first insulating layer 1321, in a lateral plane perpendicular to the thickness direction of the photovoltaic structure 120, the shortest distance between the edge of the first insulating layer 1321 and the hole wall of the lead-out hole is x, x>0. That is, the projected outer contour of the lead-out hole is entirely located within the projected outer contour of the first insulating layer 1321 and does not overlap with the edge of the first insulating layer 1321 at all. This further increases the water vapor blocking path of the first insulating layer 1321. In other embodiments, in the case that the isolation layer 132 includes the partition layer 1322, in a lateral plane perpendicular to the thickness direction of the photovoltaic structure 120, the shortest distance between the edge of the partition layer 1322 and the hole wall of the lead-out hole is x, x>0. This further increases the water vapor blocking path of the partition layer 1322.

[0113] In some of the embodiments, the depth of the lead-out hole is h, and x and h satisfy the following condition: x+h≥5mm; as an example, the sum of x+h can include but is not limited to be 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 10.5mm, 10.8mm, 11mm, 12mm, 13mm, 15mm, 20mm, 30mm, 40mm, 50mm, in some examples, a range composed of any two of the above values as end values can also be used. Further, x+h≥7mm, or x+h≥10mm. Further, 10mm≤x+h≤50mm. Still further, 10mm≤x+h≤13mm.

[0114] In this way, the range of x+h is controlled, further increasing the water vapor blocking path of the first insulating layer 1321 or the partition layer 1322 and the second insulating layer 133, which can effectively hinder the contact between the functional layer of the photovoltaic structure 120 and water vapor, and thus improve the water vapor blocking performance of the first insulating layer 1321 or the partition layer 1322 and the second insulating layer 133. Further, by adjusting the range of x+h, on the one hand, the water vapor blocking performance of the solar cell 1 can be improved, and on the other hand, the area of the first insulating layer 1321 or the partition layer 1322 can be controlled, the dead area of the solar cell 1 can be reduced, and the photoelectric conversion efficiency of the solar cell 1 can be improved.

[0115] Further, 2mm≤h≤10mm, as examples, the depth h of the lead-out hole can include but is not limited to 2mm, 2.2mm, 2.5mm, 3mm, 3.2mm, 3.5mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm. Further, 2mm≤h≤5mm; further, 2mm≤h≤4mm. The depth h of the lead-out hole is controlled within the range, on the one hand, considering the performance requirements of the package, on the other hand, it can also increase the shortest water vapor barrier path of the second insulating layer 133 in the depth direction of the lead-out hole, i.e. the vertical direction F2, thereby improving the water resistance performance of the insulating layer.

[0116] Further, the packaging layer 140 can be a glass cover plate. Further, the depth h of the lead-out hole is the thickness of the packaging layer 140.

[0117] Further, 3mm≤x≤40mm, as examples, the shortest distance x can include but is not limited to 3mm, 3.5mm, 3.8mm, 4mm, 5mm, 6mm, 6.5mm, 6.8mm, 7mm, 7.5mm, 7.6mm, 8mm, 9mm, 10mm, 15mm, 20mm, 30mm, 40mm, 50mm. Further, 3mm≤x≤8mm. The shortest distance x between the edge of the first insulating layer 1321 or the partition layer 1322 and the hole wall of the lead-out hole is further controlled within the range, which can increase the shortest water vapor barrier path of the first insulating layer 1321 or the partition layer 1322 in the vertical direction and the lateral direction, thereby improving the water resistance performance of the insulating layer.

[0118] In some embodiments, the first insulating layer 1321 is connected with the substrate 110 and the packaging layer 140 respectively. In other words, the first insulating layer 1321 is filled between the substrate 110 and the packaging layer 140, and the thickness of the first insulating layer 1321 is the same as or equivalent to the total thickness of the photovoltaic structure 120. Therefore, the first insulating layer 1321 can play a good role in stress buffering and water vapor blocking at the lead-out hole.

[0119] In some embodiments, the total thickness H of the first insulating layer 1321 is 0.20mm-0.80mm, and further can be 0.5mm-0.7mm. It can be understood that the total thickness of the first insulating layer 1321 refers to the thickness of the first insulating layer 1321 in the stacking direction of the photovoltaic structure 120. As examples, the total thickness of the first insulating layer 1321 can be 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.55mm, 0.6mm, 0.65mm, 0.7mm, 0.8mm.

[0120] In some embodiments, the partition layer 1322 is connected with the substrate 110 and the encapsulation layer 140 respectively, or the partition layer 1332 and the fourth insulation layer 1323 are connected with the substrate 110 and the encapsulation layer 140 respectively. In some embodiments, the total thickness H of the partition layer 1322 is 0.0010mm-0.80mm, further can be 0.20mm-0.80mm, and further can be 0.5mm-0.7mm.

[0121] It can be understood that, in the case that the insulation layer 132 is the first insulation layer 1321, referring to FIG. 4-13, in the preparation process, the photovoltaic structure 120 at the position where the first insulation layer 1321 is needed to be arranged under the lead-out hole can be removed first, then the first insulation strip is arranged on the substrate 110 under the lead-out hole, then the second main body part 1312 is arranged on the first insulation strip, then the second insulation strip is arranged on the second main body part 1312, and then the encapsulation layer 140 is arranged, and then the hot lamination is performed, so that the first insulation strip and the second insulation strip are hot-melted to form a whole, i.e. the first insulation layer 1321. In a specific example, the first insulation strip and the second insulation strip can be butyl strips; the thickness thereof can be selected according to the needs, for example, can be 0.4mm.

[0122] Further, the lamination temperature can be 110-120℃, and the vacuum pressure maintaining time can be 500-600s.

[0123] Further, in the preparation process, the outer surface of the second main body part 1312 can be wrapped with the fourth insulation layer, and the fourth insulation layer is hot-melted with the first insulation strip and the second insulation strip to form a whole, i.e. the first insulation layer 1321, in the hot lamination process. It can be understood that the material selection of the fourth insulation layer can be the same as that of the first insulation layer 1321, and in a specific example, the material selection of the fourth insulation layer can be the same as that of the first insulation layer 1321.

[0124] It can be understood that, in addition to the preparation process described above to wrap the first insulation layer 1321 on the outer surface of the second main body part 1312, other processes in the art can also be used.

[0125] In some embodiments, the thickness of the second main body part 1312 is 0.03mm-0.25mm, and further can be 0.1mm-0.15mm. As an example, the thickness of the second main body part 1312 can be 0.03mm, 0.05mm, 0.08mm, 0.10mm, 0.12mm, 0.15mm, 0.2mm, 0.25mm.

[0126] Referring to FIG. 7, in some embodiments, the photovoltaic structure 120 includes a plurality of sub-cells arranged in sequence in the first direction F1, and the first insulating layer 1321 or the partition layer 1322 is arranged in the first direction F1. It can be understood that the plurality of sub-cells arranged in sequence in the first direction F1 are divided by the channel group, so that the length direction of each channel in the channel group intersects the first direction F1, and further, the length direction of each channel in the channel group is perpendicular to the first direction F1.

[0127] Further, the length of the first insulating layer 1321 or the partition layer 1322 in the first direction F1 is greater than the total length of the plurality of sub-cells in the first direction F1. In other words, in the case where the isolation layer 132 is the first insulating layer 1321, the photovoltaic structure 120 below the lead-out hole in the first direction F1 is removed by a certain width, and then the first insulating layer 1321 is arranged at the position of the substrate 110 of the removed photovoltaic structure 120. In the case where the isolation layer 132 includes the partition layer 1322, the photovoltaic structure 120 below the lead-out hole in the first direction F1 does not need to be removed or only needs to be partially removed, and then the first isolation groove 13221 and the second isolation groove 13222 are formed on both sides of the partition layer 1322 in the second direction F3 by etching or the like.

[0128] Further, the width of the first insulating layer 1321 or the partition layer 1322 in the second direction F3 perpendicular to the first direction F1 is less than the length of the first insulating layer 1321 or the partition layer 1322 in the first direction F1.

[0129] Further, in the case where the isolation layer 132 is the first insulating layer 1321, the first insulating layer 1321 includes two opposite first edges parallel to the first direction F1; in a specific example, the projection of the lead-out hole on the first insulating layer 1321 is located within the first insulating layer 1321, and since the length of the first insulating layer 1321 is greater than the width, and the lead-out hole is a position prone to penetration, the distance between the two first edges and the closest point of the hole wall of the lead-out hole in the second direction F3 passing through the center point of the lead-out hole and perpendicular to the first direction F1 is x1 and x2, respectively. The smaller one of x1 and x2 is the shortest distance x.

[0130] That is, the shortest distance x is the smaller one of the distance between the two first edges and the closest point of the hole wall of the lead-out hole in the second direction F3 passing through the center point of the lead-out hole and perpendicular to the first direction F1.

[0131] Further, the projection of the center point of the lead-out hole is located on the central axis of the first insulating layer 1321 along the first direction F1, and the distance (x1 and x2) between the two first edges of the first insulating layer 1321 and the closest point of the hole wall of the lead-out hole can be set to be equal, that is, the distance between the two first edges of the first insulating layer 1321 and the hole wall of the lead-out hole in the direction perpendicular to the first direction F1 is equal. Further, x1=x2=x, so the width of the first insulating layer 1321 in the second direction wherein, is the hole diameter of the lead-out hole. This case is generally applicable to the case where the lead-out hole is opened in the packaging layer 140, and at this time, optionally, the same distance is trimmed on both sides of the center point of the lead-out hole as the center along the second direction F3, and the total width of the trimming in the second direction F3

[0132] Further, the width w of the first insulating layer 1321 in the direction perpendicular to the first direction and the hole diameter of the lead-out hole satisfy the following conditions:

[0133] Further, in order to reduce the width w of the first insulating layer 1321 in the direction perpendicular to the first direction F1 as much as possible to reduce the trimming area, w and the hole diameter of the lead-out hole satisfy the following conditions: Further, the distance between the two first edges and the closest point of the hole wall of the lead-out hole is equal, and is x; the width of the first insulating layer 1321 in the direction perpendicular to the first direction

[0134] Further, the width w of the first insulating layer 1321 in the direction perpendicular to the first direction F1 is the same as the trimming distance in that direction. This is because the insulating layer material is arranged on the trimming area and is melted and flows by subsequent heat lamination and is uniformly filled under pressure.

[0135] In the case where the isolation layer 132 includes the partition layer 1322, the partition layer 1322 including the two opposite first edges parallel to the first direction F1 can extend to the edges of the first isolation groove 13221 and the second isolation groove 13222 close to the two partitions. In the case where the projection of the center point of the lead-out hole is located on the central axis of the structure formed by the partition layer 1322 and the first isolation groove 13221 and the second isolation groove 13222 along the first direction F1, the width w of the partition layer 1322 and the hole diameter of the lead-out hole in the direction perpendicular to the first direction satisfy the following conditions: Further, the width w of the partition layer 132 in a direction perpendicular to the first direction and the aperture of the lead-out hole satisfy the following conditions:

[0136] Referring to FIG. 1, in some embodiments, the busbar structure 130 further comprises a third insulating layer 134 disposed on a surface of the encapsulation layer 140 away from the substrate 110 and surrounding the lead-out end 1313, a projection of the lead-out hole on the partition layer 132 is within a projection of the third insulating layer 134 on the partition layer 132, in other words, a projection of the lead-out hole on the substrate 110 in a thickness direction of the photovoltaic structure 120 is within a projection of the third insulating layer 134 on the substrate 110 in the thickness direction of the photovoltaic structure 120. In this way, the third insulating layer 134 can increase the difficulty of water vapor intrusion from the outside of the lead-out hole and improve the water resistance. Further, the projected area of the third insulating layer 134 on the substrate 110 in the thickness direction of the photovoltaic structure 120 is greater than the projected area of the lead-out hole on the substrate 110 in the thickness direction of the photovoltaic structure 120.

[0137] Understandably, the material of the third insulating layer 134 can be the same as that of the first insulating layer 1321, and in a specific example, the material of the third insulating layer 134 is the same as that of the first insulating layer 1321.

[0138] Referring to FIG. 7, in some embodiments, the extension direction of the first body part 1311 is perpendicular to the first direction F1. Further, the first body part 1311 is disposed along the length direction (or the extension direction) of the second electrode layer 123 connected thereto. Further, the extension direction of the partition layer 132 is perpendicular to the length direction of the second electrode layer 123 of the sub-cell.

[0139] Understandably, the photovoltaic structure 120 is divided into a plurality of sub-cells by the channel group, in other words, the first electrode layer 121, the light-absorbing layer 122 and the second electrode layer 123 stacked and disposed are divided into a plurality of sub-cells connected in series, and each sub-cell comprises the first electrode layer 121, the light-absorbing layer 122 and the second electrode layer 123 stacked and disposed. The first body part 1311 is connected to at least one of the sub-cells. Further, in order to improve the effective cell area of the photovoltaic module, the first body part 1311 is connected to the second electrode layer 123 of the outermost sub-cell of the plurality of sub-cells. Further, the first body part 1311 is disposed along the length direction of the second electrode layer 123 of the outermost sub-cell to improve the busbar effect.

[0140] In some embodiments, the solar cell 1 includes at least two busbars 131, and the first body part 1311 of the at least two busbars 131 is connected to the positive electrode and the negative electrode of the photovoltaic structure 120 respectively, so that the at least two busbars 131 are connected to the positive electrode and the negative electrode of the photovoltaic structure 120 respectively. In an embodiment, the first body part 1311 of the at least two busbars 131 is connected to the second electrode layer 123 of two sub-cells respectively, and the second electrode layer 123 of one sub-cell serves as the positive electrode and the second electrode layer 123 of the other sub-cell serves as the negative electrode. In another embodiment, the first body part 1311 of the at least two busbars 131 is connected to the second electrode layer 123 of one sub-cell and the first electrode layer 121 of the other sub-cell respectively, and the second electrode 123 of one sub-cell serves as one of the positive electrode and the negative electrode and the first electrode layer 121 of the other sub-cell serves as the other of the positive electrode and the negative electrode. Further, the two sub-cells are the two outermost sub-cells on two sides respectively. In this way, the dead area of the solar cell can be reduced.

[0141] Further, referring to FIGS. 7 and 8, in an embodiment, when the photovoltaic structure 120 is divided into two sub-zones by the partition layer 132, the busbar 131 includes two, and the first body part 1311 of one of the two busbars 131 is connected to the two second electrode layers 123 at the same end of the two sub-zones, and the first body part 1311 of the other busbar 131 is connected to the two second electrode layers 123 at the other end of the two sub-zones, so that the parallel connection of the two sub-zones is achieved. In this way, the two busbars 131 are connected to the positive electrode and the negative electrode of the photovoltaic structure 120 respectively, and the current of the photovoltaic structure 120 can be led out through the lead-out part of the busbar 131 for energy storage or power driving.

[0142] Further, referring to FIG. 10 (the lead-out end is not shown), in an embodiment, when the photovoltaic structure 120 is divided into two sub-zones by the partition layer 132, and the two sub-zones have opposite channel groups (the channel group of one sub-zone is the hatching direction of P1→P2→P3, and the channel group of the other sub-zone is the hatching direction of P3→P2→P1), the busbar 131 includes three, and the first body part 1311 of one of the two busbars 131 is connected to the second electrode layer 123 of one of the two sub-zones (exemplarily as the positive electrode), the first body part 1311 of the other busbar 131 is connected to the second electrode layer 123 of the other sub-zone (exemplarily as the negative electrode), and the third busbar 1314 is connected to the two second electrode layers 123 at the other end of the two sub-zones, so that the series connection of the two sub-zones is achieved.

[0143] In some embodiments, the material of the busbar 131 comprises an electrically conductive material. By using an electrically conductive material as the material of the busbar 131, the electrically conductive property of the busbar structure 130 can be ensured, the current can be collected, and the working efficiency and stability of the circuit can be improved. Further, the electrically conductive material comprises at least one of a metal material, a carbon material, and an electrically conductive metal oxide. The metal material comprises one or more of gold, silver, titanium, copper, and aluminum; the carbon material comprises one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the electrically conductive metal oxide comprises one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In some examples, the busbar 131 can be a stack of one or more of a metal layer, a carbon material layer, and an electrically conductive metal oxide layer.

[0144] In some embodiments, the material of the first main body part 1311, the second main body part 1312, and the lead-out end 1313 of the busbar 131 can be the same or different. In a specific example, the first main body part 1311 of the busbar 131 is a longitudinal busbar, the second main body part 1312 and the lead-out end 1313 are interconnected, and the lead-out end 1313 of the busbar is a transverse busbar and a lead-out end of the transverse busbar, and the longitudinal busbar and the transverse busbar are interconnected.

[0145] In some embodiments, the solar cell 1 further comprises an external busbar 131 (not shown in the figure) connected to the second main body part 1312 and a junction box (not shown in the figure) connected to the external busbar 131, for leading out the current of the solar cell 1 to the outside of the photovoltaic module. The provision of the junction box and the external busbar 131 helps to lead out the current of the solar cell 1 to the outside of the photovoltaic module, which can be used to drive a load or store electrical energy. The external busbar 131 can be connected to the second main body part 1312 by welding, laying, or the like.

[0146] Further, the substrate 110 is a transparent substrate 110, which comprises one of a glass substrate 110 and an organic polymer film, wherein the organic polymer film comprises one of polyethylene terephthalate (PET) and polyethylene naphthalate (PEN).

[0147] Referring to FIG. 2, further, a buffer adhesive layer 150 is further included between the encapsulation layer 140 and the second electrode layer 123. The buffer adhesive layer 150 can be formed by softening and casting the original film of the buffer adhesive layer 150 under lamination conditions. The buffer adhesive layer 150 can buffer the stress received by the light-absorbing layer 122 such as the perovskite layer, and also can have a certain sealing effect on the solar cell 1. The buffer adhesive layer 150 comprises at least one of a polyolefin elastomer (POE), an ethylene-vinyl acetate copolymer (EVA), a thermoplastic polyurethane elastomer (TPU), and a polyvinyl butyral (PVB).

[0148] Please continue to refer to FIG. 2, further, the photovoltaic structure 120 also includes at least one of the first transport layer 122 and the second transport layer 125. The first transport layer 122 is arranged between the first electrode layer 121 and the light-absorbing layer 122; further, the second transport layer 125 is arranged between the second electrode layer 123 and the light-absorbing layer 122. One of the first transport layer 122 and the second transport layer 125 is an electron transport layer, and the other is a hole transport layer.

[0149] P1, P2, and P3 can be independently linear etching regions, also called etching lines, and the three form a channel group to divide the photovoltaic structure 120 into multiple sub-cells. P1, P2, and P3 can be independently laser etching regions. The number of P1, P2, and P3 can be independently one or more.

[0150] As an example, P1 connects to the substrate 110 from the surface of the first electrode layer 121 through the bottom of the first electrode layer 121, so that the first electrode layers 121 on the left and right sides (or adjacent sub-cells) of the divided P1 are not connected to each other (to achieve insulation); further, the material in the P1 etching region is consistent with the first transport layer 122.

[0151] As an example, P2 penetrates the light-absorbing layer 122, and the material in the P2 etching region is consistent with the material of the second electrode layer 123 or filled with other conductive materials to connect the first electrode layer 121 and the second electrode layer 123 of adjacent sub-cells, or other materials (such as a PbSO4 protective layer) can be filled in the P2 etching region to prevent the material of the second electrode layer 123 or water and oxygen from directly contacting the light-absorbing layer 122. As another example, P2 penetrates the second transport layer 125, the light-absorbing layer 122, and the first transport layer 124, and the material in the P2 etching region is consistent with the material of the second electrode layer 123 or filled with other conductive materials, or other materials (such as a PbSO4 protective layer) can be filled in the P2 etching region to prevent the material of the second electrode layer 123 or water and oxygen from directly contacting the light-absorbing layer 122, to connect the first electrode layer 121 and the second electrode layer 123 of adjacent sub-cells.

[0152] As an example, P3 cuts the second electrode layer 123, or P3 penetrates the second electrode layer 123, the second transport layer 125, the light-absorbing layer 122, the first transport layer 124, and the upper surface of the first electrode layer 121 from the surface of the second electrode layer 123, so that the second electrode layers 123 on the left and right sides (or adjacent sub-cells) of P3 are not connected to each other (to achieve insulation). The P3 etching area can be filled with a material or not filled with a material, which can be selected by those skilled in the art according to actual needs. As an example, a PbSO4 protective layer can be filled outside the perovskite layer in the P3 etching area, which can protect the exposed light-absorbing layer 122 and isolate water and oxygen, thereby improving the stability of the solar cell 1.

[0153] In some embodiments, the width of P1 is 10 μm to 50 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, or 50 μm.

[0154] In some embodiments, the width of P2 is 10 μm to 200 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100 μm, 150 μm, 180 μm, or 200 μm. Further, the spacing between P2 and P1 can be 20 μm to 80 μm, for example, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, or 80 μm.

[0155] In some embodiments, the width of P3 is 10 μm to 50 μm, for example, 10 μm, 15 μm, 20 μm, 30 μm, 40 μm, or 50 μm. Further, the spacing between P3 and P2 can be 20 μm to 40 μm, for example, 20 μm, 30 μm, or 40 μm.

[0156] The material of the electron transport layer includes, but is not limited to, one or more of intrinsic n-type semiconductor, modified n-type semiconductor, [6,6]-phenyl C61 butyric acid methyl ester (PC61BM), [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), fullerene and its derivatives. Among them, the intrinsic n-type semiconductor includes one or more of tin oxide, titanium oxide, and zinc oxide; the modified n-type semiconductor includes an intrinsic semiconductor doped with at least one of bismuth, aluminum, manganese, magnesium, and chlorine, for example, one or more of tin oxide, titanium oxide, and zinc oxide. The preparation method of the electron transport layer includes one or more of spin coating, screen printing, vacuum evaporation, physical vapor deposition (PVD), chemical vapor deposition (CVD), and reactive plasma deposition (RPD). To further reduce the non-radiative recombination at the interface, the electron transport layer can have an interface modification layer, including one or more of alkali metal halide, organic amine halide, and inorganic metal oxide. The structure of the electron transport layer includes one of single layer, double layer, and multi-layer.

[0157] Materials of the hole transport layer include, but are not limited to, one or more of CuSCN, Cul, CuS, CuGaO2, MoS2, molybdenum oxide, copper phthalocyanine, copper-nickel composite oxide, nickel oxide, WO3, alumina oxide, a polymer of 3-hexylthiophene, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], polycarbazole-thiophene-benzothiadiazole-thiophene, 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. Methods of preparing the hole transport layer include one or more of spin coating, screen printing, physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, slot die.

[0158] Further, the hole transport layer can have a thickness of 10 nm to 50 nm, and as an example, the thickness can be 10 nm, 20 nm, 30 nm, 40 nm, or 50 nm.

[0159] The light absorbing layer 122 can be, but is not limited to, a perovskite light absorbing layer. For example, the light absorbing layer 122 can also include at least one of a dye-sensitized light absorbing layer, a thin-film silicon light absorbing layer, and an organic light absorbing layer. The light absorbing layer 122 is capable of generating hole-electron pairs by absorbing light and being excited by photons, and the hole and the electron are separated under the action of an electric field, and then transmitted to the first electrode layer 121 and the second electrode layer 123, respectively, and then collected by the busbar 131 to an external circuit to form a loop, which can be used to drive a load to work.

[0160] Taking the perovskite light absorbing layer as an example, the preparation method of the perovskite light absorbing layer can be a commonly used preparation method in the art, including but not limited to one or more of spin coating, doctor blading, slot die, vacuum deposition, inkjet printing. In order to further reduce the interface non-radiative recombination, the perovskite light absorbing layer can have an interface modification layer, including one or more of organic amine halide, organic thiocyanate, Lewis acid, Lewis base.

[0161] Further, the crystal structure of the perovskite light absorbing layer is ABX3 or A2CDX6. Wherein, A ion is a monovalent cation, B ion is a divalent metal cation, C ion is a monovalent metal cation, D ion is a trivalent metal cation, and X ion is a monovalent anion.

[0162] Optionally, the A ion is a monovalent cation with a larger radius, including at least one of an organic cation and a metal cation. More optionally, the organic cation includes an organic amine ion, formamidinium (HC(NH2)2 + , FA+ ) and at least one of imidazolium; more optionally, the metal cation comprises at least one of lithium ion (Li + ), sodium ion (Na + ), potassium ion (K + ), rubidium ion (Rb + ), and cesium ion (Cs + ). Further, the organic amine ion comprises at least one of methylammonium (CH3NH3 + , MA + ), dimethylammonium (MDA 2+ ), phenethylammonium (PEA + ), oleyl ammonium (OA + ), ethylammonium, propylammonium, butylammonium, pentylammonium, and hexylammonium.

[0163] Optionally, the B ion comprises at least one of Pb 2+ (lead ion), Sn 2+ (tin ion), Be 2+ (beryllium ion), Mg 2+ (magnesium ion), Ca 2+ (calcium ion), Sr 2+ (strontium ion), Ba 2+ (barium ion), Zn 2+ (zinc ion), Ge 2+ (germanium ion), Fe 2+ (ferrous ion), Co 2+ (divalent cobalt ion), Cu 2+ (divalent copper ion), and Ni 2+ (divalent nickel ion); more optionally, the B ion comprises one or both of Pb 2+ (lead ion) and Sn 2+ (tin ion).

[0164] Optionally, the C ion comprises at least one of Cs + (cesium ion), Ag + (silver ion), K + (potassium ion), and Rb + (rubidium ion).

[0165] Optionally, the D ion comprises at least one of Bi 3+ (bismuth ion), Ni 3+ (trivalent nickel ion), Fe 3+ (trivalent iron ion), and Cu 3+ (trivalent copper ion).

[0166] Optionally, the X ion comprises at least one of fluoride (F - ), chloride (Cl- bromide (Br - ), iodide (I - ), thiocyanate (SCN - ), cyanate (CNO - ), oxycyanide (OCN - ), cyanide (CN - ), selenocyanate (SeCN - ), and the like; optionally, the X ion comprises at least one of Cl - , Br - , and I - .

[0167] It is appreciated that the perovskite material in the perovskite light-absorbing layer can be selected from at least one of CsFAPbX3, CsMAPbX3, CsFAMAPbX3, CsPbX3, MAPbX3, FAPbX3, CsFAPbSnX3, CsMAPbSnX3, CsFAMAPbSnX3, CsPbSnX3, MAPbSnX3, and FAPbSnX3. Further, as an example, the perovskite material in the perovskite light-absorbing layer can be selected from at least one of CsFAPbI3, CsPbI3, and FAPbI3.

[0168] In some examples, the method for preparing the perovskite light-absorbing layer includes the following steps: mixing the A-containing material, BX2, and a solvent to prepare a perovskite precursor solution; and coating the perovskite precursor solution on a corresponding substrate and annealing to obtain the perovskite light-absorbing layer.

[0169] The first electrode layer 121 includes at least one of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), and the like. Further, the first electrode layer 121 has a resistivity of 4-30 Ωcm.

[0170] Further, in order to effectively transmit light to the light-absorbing layer 122, the first electrode layer 121 in the solar cell 1 is configured as a transparent electrode, and the second electrode layer 123 is configured as a back electrode. Further, the first electrode layer 121 and the substrate 110 form a transparent conductive glass, such as ITO glass, FTO glass, AZO glass, and GZO glass.

[0171] The material of the second electrode layer 123 (i.e. the material of the back electrode) includes one or more of a metal material, a carbon material, and a conductive metal oxide. Among them, the metal material includes one or more of gold, silver, titanium, copper, and aluminum; the carbon material includes one or more of carbon quantum dots, graphene, carbon nanotubes, carbon nanosheets, carbon fibers, and carbon black; and the conductive metal oxide includes one or more of ITO, AZO, indium-doped tungsten oxide (IWO), and cerium-doped indium oxide (ICO). In addition, the second electrode layer 123 can also be a multi-layer or mixed back electrode formed by combining the above three types of materials. The preparation method of the second electrode layer 123 includes one of thermal evaporation, electron beam evaporation (EBD), sputtering, hot-wire chemical vapor deposition (HWCVD), atomic layer deposition (ALD), physical vapor deposition (PVD), reactive plasma deposition (RPD), doctor blading, and slot die.

[0172] It can be understood that the solar cell includes a formal structure and a reverse structure in terms of structure.

[0173] For the formal structure, as a non-limiting example, referring to FIG. 2, the photovoltaic structure 120 of the solar cell 1 includes a substrate 110 and a first electrode layer 121, a first transport layer 124 (an electron transport layer), a light-absorbing layer 122, a second transport layer 125 (a hole transport layer), and a second electrode layer 123 sequentially stacked on the substrate 110. Among them, the first electrode layer 121 is a transparent electrode, and the second electrode layer 123 is a back electrode.

[0174] For the reverse structure, as a non-limiting example, referring to FIG. 2, the photovoltaic structure 120 of the solar cell 1 includes a substrate 110 and a first electrode layer 121, a first transport layer 124 (a hole transport layer), a light-absorbing layer 122, a second transport layer 125 (an electron transport layer), and a second electrode layer 123 sequentially stacked on the substrate 110. Among them, the first electrode layer 121 is a transparent electrode, and the second electrode layer 123 is a back electrode.

[0175] Specifically, as an example, the solar cell is of a reverse structure, and the preparation method thereof includes the following steps:

[0176] Step 1: etching and cleaning the transparent electrode, and drying;

[0177] Step 2: performing P1 line etching on the transparent electrode, penetrating the transparent conductive layer;

[0178] Step 3: sequentially preparing a hole transport layer on the transparent electrode;

[0179] Step 4: preparing a perovskite light-absorbing layer on the hole transport layer;

[0180] Step 5: preparing an electron transport layer on the perovskite light-absorbing layer;

[0181] Step 6: performing P2 scribing, the P2 scribe line penetrating the electron transport layer, the perovskite light-absorbing layer and the hole transport layer;

[0182] Step 7: preparing a back electrode layer on the electron transport layer;

[0183] Step 8: performing P3 scribing, the P3 scribe line penetrating the back electrode layer, the electron transport layer, the perovskite light-absorbing layer and the hole transport layer.

[0184] It can be understood that the solar cell is formal, and the preparation sequence is slightly different, that is, the electron transport layer is prepared first, and then the hole transport layer is prepared, and the structure is slightly adjusted.

[0185] Optionally, the above-mentioned solar cell can further have an electron blocking layer between the electrode layer and the hole transport layer. The material of the electron blocking layer can be a known material.

[0186] Optionally, the above-mentioned solar cell can further have a hole blocking layer between the electrode layer and the electron transport layer. The material of the hole blocking layer can include but is not limited to BCP (2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), SnO2, IWO, etc.

[0187] It can be understood that the interface between adjacent film layers of the photovoltaic structure can or can not use an interface layer according to actual design.

[0188] Another embodiment of the present application provides a preparation method of the above-mentioned solar cell, comprising the following steps:

[0189] Preparation of a photovoltaic structure comprising a first electrode layer, a light-absorbing layer and a second electrode layer arranged in sequence on a substrate;

[0190] Cleaning the photovoltaic structure on the substrate at the position where the first insulating layer is required to be arranged;

[0191] Forming the above-mentioned busbar structure and encapsulation layer on the cleaned substrate and the second electrode layer.

[0192] The above-mentioned preparation method can be used to prepare the solar cell, and the specific implementation mode is not limited. According to different film layers, for example, a spraying method, a sputtering method, a vapor deposition method and the like are selectively used, and means that can be realized by those skilled in the art can be used.

[0193] Further, the vapor deposition method includes at least one of a chemical vapor deposition method, a physical vapor deposition method, and a plasma vapor deposition method. Further, the chemical vapor deposition method is a method of generating a thin film by a chemical reaction on a substrate surface using one or more gaseous compounds or elements containing elements of the thin film, including a thermal CVD, a plasma chemical vapor deposition (PCVD), a laser CVD (LCVD), and the like. The physical vapor deposition method refers to a technology of depositing a thin film having a certain special function on a substrate surface by vaporizing a material source (solid or liquid) surface into gaseous atoms or molecules or partially ionizing into ions under vacuum conditions, and passing through a low-pressure gas (or plasma) process, including vacuum evaporation, sputtering, arc plasma deposition, ion plating, molecular beam epitaxy, and the like.

[0194] An embodiment of the present application further provides a photovoltaic module, which comprises the solar cell.

[0195] The solar cell has high light conversion efficiency and good stability, and can improve the efficiency of the photovoltaic module.

[0196] The photovoltaic module comprises one or more solar cells, which can be selected according to specific application scenarios. Further, the photovoltaic module comprises a plurality of solar cells, which are connected in series or in parallel to form a cell piece. Further, the photovoltaic module can further comprise a stacked cell, which comprises one or more solar cells. The stacked cell includes but is not limited to a crystalline silicon / perovskite stacked cell, a full perovskite stacked cell, a copper indium gallium selenide thin film cell / perovskite stacked cell, and the like.

[0197] In some embodiments, the photovoltaic module further comprises a photovoltaic glass layer, an adhesive layer, and a back plate.

[0198] The two surfaces of the cell piece are respectively provided with the adhesive layers, the surface away from the cell piece in one of the adhesive layers is provided with the back plate, and the surface away from the cell piece in the other adhesive layer is provided with the photovoltaic glass layer.

[0199] The photovoltaic glass layer and the back plate are used to protect the solar cell, and have the functions of sealing, insulation, and waterproofing; the adhesive layers play the roles of bonding the photovoltaic glass layer and the cell piece and bonding the back plate and the cell piece.

[0200] Optionally, the material of the photovoltaic glass layer is tempered glass, the material of the back plate is TPT (polyvinyl fluoride) or TPE (thermoplastic elastomer), and the material of the adhesive layer is EVA (polyethylene-polyvinyl acetate copolymer).

[0201] Further, the photovoltaic module further comprises a junction box and a frame. Further, the lead-out end of the busbar of the solar cell is connected with the junction box.

[0202] The junction box is used for protecting the power generation system of the whole photovoltaic module, and is equivalent to a current transfer station. When a short circuit occurs in a cell, the junction box automatically disconnects the short-circuit cell string.

[0203] The outer frame can support and protect the whole photovoltaic module. The frame can be made of aluminum alloy, which has excellent strength and corrosion resistance.

[0204] Further, the connection between the frame and other parts of the photovoltaic module is bonded and sealed by silica gel. The photovoltaic module can convert solar energy into electrical energy, which can be stored in a storage battery or used to drive a load.

[0205] In some embodiments, the photovoltaic module is a solar cell panel.

[0206] The photovoltaic system according to an embodiment of the present application further comprises the photovoltaic module.

[0207] The photovoltaic system uses the photovoltaic effect of the solar cell in the photovoltaic module to directly convert solar radiation energy into electrical energy, which has high efficiency. Further, the photovoltaic system is a photovoltaic power generation system.

[0208] The photovoltaic module is the core part of the photovoltaic power generation system. The photovoltaic system comprises one or more photovoltaic modules, which can be selected according to the specific application scenario. Further, when the photovoltaic system comprises a plurality of photovoltaic modules, the plurality of photovoltaic modules form a photovoltaic array.

[0209] The photovoltaic system can be an independent photovoltaic power generation system or a grid-connected photovoltaic power generation system.

[0210] The independent photovoltaic power generation system comprises a photovoltaic array, a storage battery, a charge controller, a power electronic converter (inverter), a load, etc. Its working principle is that solar radiation energy is first converted into electrical energy by the photovoltaic array, and then the electrical energy is converted by the power electronic converter to supply power to the load. At the same time, the excess electrical energy is stored in the energy storage device in the form of chemical energy through the charge controller. In this way, when the sunlight is insufficient, the energy stored in the battery can be converted into AC 220V, 50Hz electrical energy through the power electronic inverter, filtering and power transformer to supply the AC load.

[0211] The grid-connected photovoltaic power generation system comprises a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and system monitoring. Its working principle is that solar radiation energy is converted by the photovoltaic array, and then converted into high-voltage direct current through the high-frequency DC / DC boost circuit. Then, the high-voltage direct current is inverted by the power electronic inverter to output a sinusoidal alternating current with the same frequency and voltage as the grid voltage.

[0212] The two photovoltaic power generation systems have respective characteristics, and can be selected according to specific application scenarios.

[0213] An embodiment of the present application provides a power utilization device, comprising the solar cell or the photovoltaic module.

[0214] In some embodiments, the solar cell or the photovoltaic module can be used as a power supply of the power utilization device, and can also be used as an energy storage unit of the power utilization device.

[0215] Further, the power utilization device can include a mobile device such as a mobile phone, a notebook computer and the like, an electric vehicle, an electric train, a ship and a satellite, but is not limited thereto.

[0216] FIG. 3 is a power utilization device as an example. The power utilization device 2 is a pure electric vehicle, a hybrid electric vehicle or a plug-in hybrid electric vehicle.

[0217] An embodiment of the present application provides a power generation device, comprising the solar cell or the photovoltaic module.

[0218] In order to make the technical problems, technical solutions and beneficial effects solved by the present application clearer, the present application will be further described in detail below in combination with embodiments and drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. The description of the at least one exemplary embodiment is actually only illustrative, but not as any limitation on the present application and its application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0219] Unless otherwise specified in the embodiments, the technology or condition is performed according to the technology or condition described in the literature in the art or according to the product instruction. Unless otherwise specified, the reagent or instrument is a conventional product that can be obtained by market purchase.

[0220] Embodiment 1

[0221] The preparation of the perovskite solar cell comprises the following steps:

[0222] (1) Preparation of a substrate 110 containing a first electrode layer. A 500 nm thick FTO conductive layer is sputtered on a 2.2 mm thick float low-sodium high-transparency glass, cleaned with acetone and isopropyl alcohol for 2 times, immersed in deionized water for ultrasonic treatment for 20 min, dried in a forced air drying oven, and then cooled at room temperature for 5 min to obtain clean FTO conductive glass with a size of 1 m x 2 m.

[0223] (2) P1 scribe line. P1 scribe line was performed on FTO conductive glass by laser cutting, and the number of P1 scribe line was 163; the width of P1 scribe line was 10 pm, and the spacing between P1 scribe lines was 5.95 mm.

[0224] (3) Preparation of hole transport layer, perovskite layer and electron transport layer.

[0225] A 20-nm-thick nickel oxide hole transport layer was prepared by magnetron sputtering; then, 1.2 mol / L Cs 0.05 FA 0.95 PbI3perovskite precursor solution, the solvent in the precursor solution was N,N-dimethylformamide (DMF) and N-methyl pyrrolidone (NMP) with a volume ratio of 6:1, which was coated on the nickel oxide hole transport layer by slot coating, and then 50 s of negative pressure treatment was performed to volatilize part of the solvent, followed by 10 min of 150°C hot plate annealing, to obtain a 500-nm-thick Cs 0.05 FA 0.95 PbI3perovskite layer; finally, a 20-nm-thick C60 electron transport layer was deposited on the perovskite layer by thermal evaporation in a vacuum chamber (<1 x 10 -4 Pa) at a rate of 0.1 A / s.

[0226] (4) P2 scribe line. P2 scribe line was performed by laser cutting, and P2 scribe line penetrated the electron transport layer, the perovskite light-absorbing layer and the hole transport layer, the number of P2 scribe line was 163; the width of P2 scribe line was 60 pm, and the spacing between P2 scribe line and P1 scribe line was 20 pm.

[0227] (5) Preparation of second electrode layer. 100 nm of copper was evaporated in a vacuum evaporation device at a rate of 0.1 A / s.

[0228] (6) P3 scribe line. After evaporation, P3 scribe line was performed, and P3 scribe line penetrated the back electrode layer, the electron transport layer, the perovskite light-absorbing layer and the hole transport layer, to obtain the complete photovoltaic structure 120 of the perovskite cell. The number of P3 scribe line was 163; the width of P3 scribe line was 10 pm, and the spacing between P3 scribe line and P2 scribe line was 20 pm.

[0229] (7) P4 scribe line and packaging. When P4 scribe line was performed, the effective area was divided by laser, and the effective area was as shown in FIG. 4; P4 divided the effective area into two parallel partitions, and the lead-out hole was located between the two parallel partitions; the photovoltaic structure on the four sides and below the lead-out hole was removed by using a laser trimming machine, as shown in FIG. 5, and the width below the lead-out hole was the largest to adapt to the case that the lead-out hole of the packaging layer was in the middle (as shown in FIG. 8, the lead-out hole was located at the position of the lead-out end 1313, which was in the middle of the photovoltaic structure 120 and between the two partitions formed by P4). Then, packaging was performed.

[0230] Specifically, the distance 'a' between the P4 scribe lines on both sides of the positive and negative electrodes and their respective edges is 12mm; the distance 'b' between the outermost P4 scribe line (P41 or P42) and its corresponding outermost edge in the distribution direction of the two zones is 12.25mm; and the distance between the two middle P4 scribe lines at the lead-out hole (i.e., between P43 and P44) is... A rectangle with a width of 22.2 mm and a length of 1000 mm is drawn around the lead-out hole. The depth h of the lead-out hole is 3.2 mm; the diameter of the lead-out hole... The distance x1 between the hole wall closest to the P43 scribe line and the P43 scribe line is 7mm, and the distance x2 between the hole wall closest to the P44 scribe line and the P44 scribe line is equal, x1=x2=7.6mm. x=x1=x2=7.6mm, the shortest permeation distance L is extended to 10.8mm, L=x+h=7.6mm+3.2mm=10.8mm).

[0231] The encapsulation operation in step (7) includes the following steps.

[0232] (7.1) First layer of butyl rubber strip: First, use the encapsulation layer cover plate to find the projection points of the two lead holes on the photovoltaic structure 120 (located near the middle). With the lead hole projection point as the center, lay the first layer of butyl rubber strip (PIB strip) 1321 on the substrate parallel to the bottom edge, as shown in Figure 6. The first layer of butyl rubber strip (PIB strip) 1321 is located between the lines P43 and P44.

[0233] (7.2) Busbars: A longitudinal busbar (i.e., the first main body 1311) is attached to each of the positive and negative terminals, extending to the end of the 0.4mm thick first layer of butyl rubber strip 1321, as shown in Figure 7; one side of the transverse busbar overlaps with the longitudinal busbar, and the lead-out end 1313 on the other side is used to extend from the lead-out hole into the junction box for welding, as shown in Figure 8; the sub-cells in the sub-photovoltaic structure separated by the first layer of butyl rubber strip are connected in series, and the two sub-photovoltaic structures are connected in parallel, forming a circuit that is first connected in series and then in parallel, as shown in Figure 9.

[0234] (7.3) Second layer of butyl rubber strip: The second layer of butyl rubber strip 1322 is made with the projection point as the center, and the busbar to be welded is passed through the opening, so that the first layer of butyl rubber strip 1321 and the second layer of butyl rubber strip 1322 perfectly overlap to form a structure of double layer butyl rubber strip sandwich second main body 1312, as shown in Figure 11.

[0235] (7.4) Buffer film: A buffer film 150 is covered on the second electrode layer 123 of the photovoltaic structure 120. The material is TPO, as shown in Figure 12.

[0236] (7.5) Edge sealing butyl tape: An edge sealing butyl tape 160 is laid on the periphery of the substrate for edge sealing, which forms a four-corner lap joint pattern with the double-layer butyl tape, as shown in FIG. 13.

[0237] (7.6) Encapsulation layer: A piece of open-hole tempered glass of the same size is covered on the surface as an encapsulation layer (i.e., cover plate), which is as neat as possible to avoid cracking during lamination.

[0238] (7.7) Lamination: Put into the laminator and set the parameters (lamination temperature 110°C, vacuum holding 550s), complete the lamination operation; during the lamination process, the edge sealing butyl tape 160 and the double-layer butyl tape melt to form an integral and fill the edge cleaning area, and the cross-sectional structure of the solar cell obtained is shown in FIGS. 1 and 2.

[0239] (8) Junction box: Apply adhesive to the periphery of the bottom of the junction box, and then install the junction box to the cover plate glass.

[0240] (9) Welding: At a high temperature of 410°C, use rosin and tin strips to connect the copper strips and the positive and negative electrodes of the junction box together.

[0241] (10) Silicone gel: Finally, use a glue gun to inject silicone gel into the junction box, and after the glue is completely cured, the top cover can be buckled.

[0242] Example 2

[0243] The same as Example 1, the difference is only that the scribe edge cleaning parameters in step (7) are different, and the specific parameters are as follows: the distance between the middle two P4 scribes at the lead-out hole is 20.6 mm. A rectangle with an area of 20.6 mm wide x 1000 mm long is drawn with the lead-out hole as the center. The depth h of the lead-out hole is 3.2 mm; the hole diameter of the lead-out hole is 7 mm. The distance x1 between the hole wall of the lead-out hole closest to the P43 scribe and the P43 scribe and the distance x2 between the hole wall of the lead-out hole closest to the P44 scribe and the P44 scribe are equal, x1 = x2 = 6.8 mm. x = x1 = x2 = 6.8 mm, and the shortest penetration distance L is extended to 10.0 mm, L = x + h = 6.8 mm + 3.2 mm = 10.0 mm.

[0244] Example 3

[0245] The same as Example 1, the difference is only that the scribe edge cleaning parameters in step (7) are different, and the specific parameters are as follows: the distance between the middle two P4 scribes at the lead-out hole is 20.6 mm. A rectangle with an area of 20.6 mm wide x 1000 mm long is drawn with the lead-out hole as the center. The depth h of the lead-out hole is 3.2 mm; the hole diameter of the lead-out hole is 7 mm. The distance x1 between the hole wall of the lead-out hole closest to the P43 scribe line and the P43 scribe line and the distance x2 between the hole wall of the lead-out hole closest to the P44 scribe line and the P44 scribe line are equal, x1 = x2 = 1.8 mm. x = x1 = x2 = 1.8 mm, and the shortest penetration distance L is extended to 5.0 mm, L = x + h = 1.8 mm + 3.2 mm = 5.0 mm.

[0246] Comparative Example 1

[0247] The same as Example 1, except that step (7) is different, specifically as follows:

[0248] (7) P4 scribe and encapsulation. When scribing P4, the effective area is divided by laser, and the effective area is the part within the P4 scribe line as shown in FIG. 14; the photovoltaic structure outside P4 on the four sides is removed by using a laser edge cleaning machine, so that the lead-out hole suitable for the encapsulation layer is located on the edge and above the effective area.

[0249] The distance a between the P4 scribe line on the positive and negative electrode sides and the edge on the two sides, and the distance b between the P4 scribe line (P41 or P42) on the other two sides and the outermost edge of the substrate corresponding to each of them are the same as in Example 1, and the setting position and hole size of the lead-out hole in Comparative Example 1 are the same as in Comparative Example 1. The difference is that the edge cleaning is not performed below the lead-out hole in Comparative Example 1, i.e., the edge cleaning area between P43 and P44 in Example 1 is not formed; accordingly, the first layer of butyl rubber strip (PIB strip) 1321 is located above the photovoltaic structure in this area. Since the photovoltaic structure below the lead-out hole is not removed, for the hole plugging, the butyl rubber gasket is placed below, so the encapsulation operations (7.1) and (7.2) in step (7) are slightly different, and the other steps are similar.

[0250] The encapsulation operation in step (7) includes the following steps.

[0251] (7.1) Bus bar: first find the projection points of the two lead-out holes on the photovoltaic structure 120 on the encapsulation layer by using the encapsulation layer cover plate, and then paste a longitudinal bus bar on each of the positive and negative electrodes to extend to the high-temperature insulating tape for a certain length, and place a transverse bus bar on the high-temperature insulating tape, one side of which overlaps the longitudinal bus bar, and the other side of which extends from the lead-out hole to the junction box with the projection point as the center for welding (as shown in FIG. 15).

[0252] (7.2) Butyl rubber gasket: the butyl rubber gasket is processed by hole opening with the projection points of the lead-out holes on the cover plate glass as the center, and the bus bar to be welded is passed through the hole opening.

[0253] (7.3) Buffering adhesive film: cover a layer of buffering adhesive film 150 above the second electrode layer 123 of the photovoltaic structure 120, and the material is TPO.

[0254] (7.4) Edge sealing butyl tape: An edge sealing butyl tape 160 is laid on the periphery of the substrate.

[0255] (7.5) Encapsulation layer: A piece of open hole toughened glass of the same size is covered on the surface as the encapsulation layer (i.e. cover plate), which is as neat as possible to avoid the fragmentation during lamination.

[0256] (7.6) Thermal lamination: Put into the laminator and set the parameters (laminating temperature 110℃, vacuum pressure 550s), complete the lamination operation; during the lamination process, the edge sealing butyl tape 160 melts to form an integral and fill the edge cleaning area, and forms a good adhesion with the substrate glass and cover plate glass. At the same time, the butyl rubber gasket below the hole melts and fills the lead-out hole under the action of pressure, and the cross-sectional structure of the solar cell obtained is shown in FIG. 16.

[0257] The main difference between Comparative Example 1 and Example 1 in structure is that in Comparative Example 1, a photovoltaic structure including the light absorption layer 122 is provided below the lead-out hole (i.e. directly below the lead-out end 1313 of the busbar 131).

[0258] The following is the performance test.

[0259] (1) IV test: Use AAA level solar simulator as light source, high precision source table as test equipment, voltage scanning range from -0.5V to 48V, data acquisition delay is 20ms, collect current voltage data, program the voltage as the horizontal axis, the current as the vertical axis to draw the I-V curve, the horizontal axis intercept is the open circuit voltage Voc, the vertical axis intercept is the short circuit current Jsc, the product of I and V on the IV curve is the power under the corresponding load, the ratio of the maximum power to the solar simulator irradiation power is the efficiency PCE. Take the average of multiple data under the same experimental conditions.

[0260] (2) PL test: Photoluminescence (PL) test, place the module on the photoluminescence imaging equipment, use 502nm light as excitation light, irradiate the assembly, and use a special camera to collect the photoluminescence intensity imaging of 700-900nm on the 2D plane.

[0261] (4) EL test: Electroluminescent (EL) test, place the module on the electroluminescent imaging equipment, connect the positive and negative electrodes to the interface on the equipment, adjust the source table, input 300mA of external current under 44V, and use a special camera to collect the photoluminescence intensity imaging of 700-900nm on the 2D plane.

[0262] (5) UV-TC sequence test: first, the device was placed in a UV aging oven with temperature controlled at 60°C, irradiated by a light source with irradiance of 250 W / m2 at 280-400 nm for 60 h, then transferred to a thermal cycle test oven, and subjected to a thermal cycle test from -40°C to 85°C with a temperature ramp rate of 1°C / min, 85°C and -40°C each for 45 min, for a total of 200 cycles, according to IEC 61215-2:2021 MQT11. After removal, the device was placed at room temperature for one hour to recover, then subjected to visual inspection and measurement of IV, PL and EL after aging. 2 80 进

[0263] The PCE loss rate before and after the UV-TC sequence test was calculated, and the calculation formula was as follows:

[0264] PCE loss rate = (PCE before aging - PCE after aging) / PCE before aging.

[0265] The visual inspection results were recorded.

[0266] (6) DH test: the PCE of the perovskite photovoltaic module obtained in the examples and comparative examples was measured by IV test before the DH test.

[0267] Then, the DH test (MQT 13) specified in the IEC61215:2021 standard was performed. The test method was as follows: the positive and negative terminals of the junction box of the perovskite photovoltaic module were short-circuited, and the module was placed in a constant temperature and humidity oven with a temperature of 85±2°C and a humidity of 85±5% RH. Every 500 h of aging, the temperature was programmed to decrease at a rate of 1.5°C / min, and after about 40 min of recovery to room temperature, the open circuit recovery was continued at 23±5°C and below 75% RH for 2 hours. Visual inspection, photography, and measurement of IV test, PL imaging detection, and EL imaging detection after aging were performed. Then, the module was placed back and the aging was continued until the PCE decreased to less than 80% of the initial value and the module showed yellowing abnormalities in visual inspection, and the test was stopped. The total time of aging until the PCE first decreased to less than 80% of the initial value was recorded as T 80 , and the total time of aging until the module first showed yellowing abnormalities in visual inspection was recorded as T 进 water.

[0268] The parameters of the comparative examples and examples are shown in Table 1. Among them, the shortest penetration distance L = x + h, x is the smaller one of the distance x1 between the hole wall closest to the P43 line of the lead-out hole and the P43 line and the distance x2 between the hole wall closest to the P44 line of the lead-out hole and the P44 line, and h is the depth of the lead-out hole. w is the distance between the middle two P4 lines at the lead-out hole (i.e. between P43 and P44), i.e. the clear width below the lead-out hole.

[0269] The edge cleaning area, UV-TC sequence test and DH test results of each comparative example and example are shown in Table 2.

[0270] Table 1

[0271] Table 2

[0272] It should be noted that the lead-out hole in Comparative Example 1 is located above the photovoltaic structure, and since the photovoltaic structure is provided below the lead-out hole, the water oxygen intrusion path in the thickness direction can also affect its performance. It can be found from the observation of the test results that all the examples do not show abnormality in the UV-TC sequence test. The PCE loss of Comparative Example 1 is too high, the visual inspection finds that the lead-out hole is yellow below, and the PL imaging shows darkening and the EL imaging shows brightening, which indicates that there is some perovskite degradation and local short circuit here. It is proved that the stress formed by the internal gasket causes short circuit and degradation. At the same time, in the DH test, the T 进水 and T 80 are the smallest, which may be related to the shortest penetration distance of only 3.2 mm.

[0273] Compared with Comparative Example 1, each example suppresses the negative effects of internal stress by cleaning the edge with a width w below the lead-out hole, and sets an insulating layer at the edge cleaning position to increase the shortest penetration distance L and improve the water resistance, thereby improving the device stability of the solar cell and the photoelectric performance stability.

[0274] Each technical feature of the above-described examples can be combined arbitrarily, and in order to make the description simple, each technical feature in the above-described examples is not described in all possible combinations, however, as long as the combination of these technical features does not exist contradictory, it should be considered as the scope of the description.

[0275] The above-described examples only express several embodiments of the present application, and the description is more specific and detailed, but it should not be understood as limiting the scope of the patent application. It should be noted that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of the present application. Therefore, the scope of the patent protection of the present application should be subject to the appended claims.

Claims

1. A solar cell, comprising: Substrate; A photovoltaic structure, the photovoltaic structure comprising a first electrode layer, a light-absorbing layer and a second electrode layer sequentially stacked on the substrate; A busbar structure is provided, wherein the photovoltaic structure and the busbar structure are located on the same side of the substrate. The busbar structure includes a busbar component, an isolation layer, and a second insulating layer. The busbar component includes a first main body, a second main body, and a lead-out terminal connected in sequence. The first main body is connected to the second electrode layer. The isolation layer is disposed on the substrate and divides the photovoltaic structure into two partitions, which are located on opposite sides of the isolation layer and connected through the first main body. The lead-out terminal includes a connected internal segment and an external segment, and the second insulating layer wraps around the internal segment of the lead-out terminal. and An encapsulation layer is provided, which, together with the substrate, forms an encapsulation structure. The photovoltaic structure is located within the encapsulation structure. The encapsulation layer has lead-out holes, with an internal segment of the lead-out end located in the lead-out hole and an external segment of the lead-out end located outside the encapsulation layer. The projection of the lead-out hole onto the substrate along the thickness direction of the photovoltaic structure lies within the projection of the insulating layer onto the substrate along the thickness direction of the photovoltaic structure.

2. The solar cell according to claim 1, wherein, The insulating layer is a first insulating layer, which wraps around the outer surface of the second main body and is located on the substrate. The first insulating layer divides the photovoltaic structure into two partitions, which are located on both sides of the first insulating layer. The two partitions are connected through the first main body. The lead-out end includes a connected internal section and an external section. The projection of the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is located within the projection of the first insulating layer on the substrate along the thickness direction of the photovoltaic structure.

3. The solar cell according to claim 1, wherein, The isolation layer includes a partition layer, which includes one or more of the first electrode layer, the light-absorbing layer and the second electrode layer sequentially stacked on the substrate. The partition layer is isolated from the two partitions by a first isolation trench and a second isolation trench, respectively.

4. The solar cell according to claim 3, wherein, The first isolation trench and / or the second isolation trench are filled with insulating material.

5. The solar cell according to claim 3, wherein, One of the partitions, the partition layer, and the other partition are arranged sequentially along the second direction, and the solar cell satisfies one or more of the following conditions: (1) The partition layer has the same layer structure as the photovoltaic structure in the thickness direction; (2) The dimensions of the first isolation trench and the second isolation trench in the second direction are each independently 10μm to 30μm; (3) The insulating layer further includes a fourth insulating layer disposed between the second main body and the partition layer.

6. The solar cell according to any one of claims 1 to 5, wherein, The two partitions are connected in series or in parallel through the first main body.

7. The solar cell according to any one of claims 1 to 5, wherein, The projected area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure is smaller than the projected area of ​​the insulating layer on the substrate along the thickness direction of the photovoltaic structure.

8. The solar cell according to any one of claims 1 to 5, wherein, In a transverse plane perpendicular to the thickness direction of the photovoltaic structure, the shortest distance between the edge of the insulating layer and the wall of the outlet hole is x, where x > 0.

9. The solar cell according to claim 8, wherein, The depth of the lead-out hole is h, and x and h satisfy the following condition: x + h ≥ 5 mm.

10. The solar cell according to claim 9, wherein, One or more of the following conditions must be met: (1) 2mm≤h≤10mm; (2) 3mm≤x≤40mm.

11. The solar cell according to claim 9, wherein, 10mm≤x+h≤50mm.

12. The solar cell according to claim 9, wherein, One or more of the following conditions must be met: (1) 2mm≤h≤5mm; (2) 3mm≤x≤8mm; (3) 10mm≤x+h≤13mm.

13. The solar cell according to any one of claims 1 to 5, wherein, The insulating layer is connected to the substrate and the encapsulation layer, respectively.

14. The solar cell according to claim 2, wherein, One or more of the following conditions must be met: (1) The total thickness of the first insulating layer is 0.20 mm to 0.80 mm; (2) The thickness of the second main body is 0.03mm to 0.25mm.

15. The solar cell according to claim 3, wherein, The total thickness of the partition layer is 0.0010 to 0.80 mm.

16. The solar cell according to any one of claims 1 to 10, wherein, The photovoltaic structure includes a plurality of sub-cells arranged sequentially in a first direction, and the insulating layer is disposed along the first direction; and also satisfies one or more of the following conditions: (1) The length of the insulating layer in the first direction is greater than or equal to the total length of the plurality of sub-cells in the first direction; (2) The width of the insulating layer in the direction perpendicular to the first direction is less than the length of the insulating layer in the first direction.

17. The solar cell according to any one of claims 1 to 16, wherein, When the distance between the two edges of the insulating layer in the direction perpendicular to the first direction and the wall of the outlet hole is equal, the width w of the insulating layer in the direction perpendicular to the first direction and the diameter of the outlet hole are... The depth h of the outlet hole satisfies the following condition:

18. The solar cell according to claim 2, wherein, The first insulating layer and the second insulating layer each independently include one or more of the following: butyl rubber layer, polyisoprene layer, TPO hot melt adhesive layer, glass melt layer, and polyolefin elastomer hot melt adhesive layer.

19. The solar cell according to any one of claims 1 to 18, wherein, The bus structure further includes a third insulating layer, which is disposed on the surface of the encapsulation layer away from the substrate and surrounding the lead-out end. The projection of the lead-out hole onto the substrate along the thickness direction of the photovoltaic structure is within the projection of the third insulating layer onto the substrate along the thickness direction of the photovoltaic structure.

20. The solar cell according to claim 19, wherein, The projected area of ​​the third insulating layer on the substrate along the thickness direction of the photovoltaic structure is greater than the projected area of ​​the lead-out hole on the substrate along the thickness direction of the photovoltaic structure.

21. The solar cell according to any one of claims 1 to 20, wherein, The solar cell includes at least two current collectors, and the first main body of each of the at least two current collectors is connected to the positive and negative electrodes of the photovoltaic structure, respectively.

22. The solar cell according to any one of claims 1 to 21, wherein, The light-absorbing layer includes a perovskite light-absorbing layer.

23. A photovoltaic module comprising a solar cell as claimed in any one of claims 1 to 22.

24. An electrical device comprising at least one selected from the solar cell of any one of claims 1 to 22 and the photovoltaic module of claim 23.

25. A power generation device comprising at least one selected from the solar cell of any one of claims 1 to 22 and the photovoltaic module of claim 23.

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