Thin film battery and preparation method therefor, photovoltaic system, electric device, and power generation device

Abstract

The present disclosure provides a thin film battery and a preparation method therefor, a photovoltaic system, an electric device, and a power generation device. The thin film battery comprises a substrate, a bottom electrode layer, a semiconductor layer, and a top electrode layer that are sequentially stacked. The thin film battery further comprises first scribed groove groups, second scribed groove groups, and third scribed groove groups. One first scribed groove group, one second scribed groove group, and one third scribed groove group are used for isolation to obtain a group of sub-batteries arranged in a second direction. In each group of sub-batteries, the last sub-battery is electrically connected to the bottom electrode layer retained on a second side of the first scribed groove group, the first sub-battery is electrically connected to the top electrode layer retained on a first side of the third scribed groove group, the first side and the second side are opposite in a first direction, and the remaining sub-batteries are all electrically isolated from the bottom electrode layer retained around the first scribed groove group and the top electrode layer retained around the third scribed groove group.

Description

Thin film battery and preparation method thereof, photovoltaic system, power consumption and power generation device

[0001] Cross-reference to related applications

[0002] The present disclosure is based on and claims priority to Chinese Patent Application No. 202410854854.X, filed on June 27, 2024, entitled "Thin film battery and preparation method thereof, photovoltaic system, power consumption and power generation device", the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present disclosure relates to the technical field of batteries, and particularly relates to a thin film battery and a preparation method thereof, a photovoltaic system, and a power consumption and power generation device. BACKGROUND

[0004] At present, the sub-cells in a monolithic thin film battery (such as a thin film solar module) are in a full series structure, which leads to that when a single sub-cell is shaded, the hot spot effect makes it bear a reverse bias, and when the sub-cell is completely shaded, the reverse voltage borne by the sub-cell can reach the sum of the voltages generated by the remaining sub-cells in the series circuit (more than 100V), thereby breaking down the shaded sub-cell and causing damage to the thin film battery. SUMMARY

[0005] The embodiments of the present disclosure provide a thin film battery and a preparation method thereof, a photovoltaic system, and a power consumption and power generation device, which can realize a more flexible connection mode of sub-cells at a process level, while avoiding breakdown of shaded sub-cells and prolonging the service life of the battery.

[0006] A first aspect of the present disclosure provides a thin-film battery, comprising a substrate, a bottom electrode layer, a semiconductor layer and a top electrode layer stacked in sequence; the thin-film battery further comprises a plurality of first scribe groove groups arranged along a second direction, the first scribe groove groups are used to cut the bottom electrode layer along a third direction, and the first scribe groove groups retain the bottom electrode layer on at least one side along a first direction; the thin-film battery further comprises a plurality of second scribe groove groups arranged along the second direction, the second scribe groove groups are used to cut the semiconductor layer along the third direction, and the second scribe groove groups remove at least part of the semiconductor layer on both sides along the first direction; the thin-film battery further comprises a plurality of third scribe groove groups arranged along the second direction, the third scribe groove groups are used to cut the top electrode layer along the third direction, and the third scribe groove groups retain the top electrode layer on at least one side along the first direction; wherein a first scribe groove group, a second scribe groove group and a third scribe groove group are used to isolate a group of sub-batteries arranged along the second direction; in each group of sub-batteries, the last sub-battery is electrically connected with the bottom electrode layer retained by the second side of the first scribe groove group, the first sub-battery is electrically connected with the top electrode layer retained by the first side of the third scribe groove group, the first side and the second side are opposite along the first direction, and the remaining sub-batteries are electrically isolated from the bottom electrode layer retained around the first scribe groove group and the top electrode layer retained around the third scribe groove group.

[0007] Thus, by retaining the bottom electrode layer and the top electrode layer on both sides of the sub-battery, the bottom electrodes of different groups of sub-batteries are at the same potential, and the top electrodes are at the same potential, realizing the parallel connection structure of different groups of sub-batteries, avoiding breakdown of the blocked sub-battery, and prolonging the battery life.

[0008] In some embodiments, in addition to the last sub-battery in each group of sub-batteries, the bottom electrode of the other sub-batteries is electrically connected with the top electrode of the adjacent next sub-battery, so that the multiple sub-batteries in the same group of sub-batteries are in series connection; the bottom electrode of the last sub-battery in each group of sub-batteries is electrically isolated from the top electrode of the first sub-battery in the adjacent other group of sub-batteries, and the bottom electrodes of the last sub-batteries in all groups of sub-batteries are electrically connected, and the top electrodes of the first sub-batteries in all groups of sub-batteries are electrically connected, so that the sub-batteries of different groups are in parallel connection.

[0009] Thus, the internal sub-batteries in each group are in series connection, and the sub-batteries of different groups are in parallel connection, and the thin-film battery can realize the series-parallel connection structure. By introducing the parallel connection structure, the overall voltage of the thin-film battery is reduced, so that when one of the sub-batteries is blocked, the reverse bias of the blocked sub-battery is reduced, and it is borne by the sub-battery group in which the blocked sub-battery is located and all the sub-battery groups connected in parallel, avoiding breakdown of the blocked sub-battery, and prolonging the battery life.

[0010] In some embodiments, the first side and the second side of the first scribe groove group each retain a bottom electrode layer, and the first side and the second side of the third scribe groove group each retain a top electrode layer; the first side and the second side are opposite along a first direction; a last sub-cell is electrically connected to the bottom electrode layer retained by the second side and is isolated from the bottom electrode layer retained by the first side, and a first sub-cell is electrically isolated from the top electrode layer retained by the second side and is electrically connected to the top electrode layer retained by the first side; the remaining sub-cells are each electrically isolated from the bottom electrode layers retained by the first side and the second side, and the remaining sub-cells are each electrically isolated from the top electrode layers retained by the first side and the second side.

[0011] Thus, when a parallel structure is implemented, the last sub-cell is connected to the bottom electrode layer of the second side, and the first sub-cell is connected to the top electrode layer of the first side, thereby avoiding short circuit and facilitating the extraction of the positive and negative electrode structures.

[0012] In some embodiments, each first scribe groove group includes a plurality of first horizontal scribe grooves, a first vertical long scribe groove and a first vertical short scribe groove; each second scribe groove group includes a plurality of second horizontal scribe grooves and two second vertical scribe grooves; each third scribe groove group includes a plurality of third horizontal scribe grooves, a third vertical long scribe groove and a third vertical short scribe groove, the first, second and third horizontal scribe grooves extend along the first direction and are arranged in parallel along the second direction, each first horizontal scribe groove is adjacent to one second horizontal scribe groove along the second direction, and each second horizontal scribe groove is adjacent to one third horizontal scribe groove along the second direction away from the closest first horizontal scribe groove; the second vertical scribe grooves, the first, third vertical long scribe grooves, the first and third vertical short scribe grooves extend along the second direction; all the first vertical long scribe grooves are connected end to end to form a first whole scribe groove, the first whole scribe groove intersects each first horizontal scribe groove; the first vertical short scribe groove intersects each first horizontal scribe groove in the first scribe groove group, and the first vertical short scribe grooves in adjacent first scribe groove groups are isolated from each other; one second vertical scribe groove in each second scribe groove group is connected end to end to form a second whole scribe groove, and another second vertical scribe groove in each second scribe groove group is connected end to end to form a third whole scribe groove, the second and third whole scribe grooves each intersect each second horizontal scribe groove; all the third vertical long scribe grooves are connected end to end to form a fourth whole scribe groove, and the fourth whole scribe groove intersects each third horizontal scribe groove; the third vertical short scribe groove intersects each third horizontal scribe groove in the third scribe groove group, and the third vertical short scribe grooves in adjacent third scribe groove groups are isolated from each other; the first, second whole scribe grooves and the third vertical short scribe groove are adjacent to the same edge of the thin-film battery along the first direction; the first vertical short scribe groove, the third whole scribe groove and the fourth whole scribe groove are adjacent to the other edge of the thin-film battery along the first direction; and the first, second and third horizontal scribe grooves each do not contact both edges of the thin-film battery along the first direction.

[0013] In this way, the scribe grooves in the horizontal direction can realize the mutual segmentation of different sub-cells and the series structure within the sub-cell group, and the scribe grooves in the vertical direction can reserve the bottom electrode layer and the top electrode layer on both sides to realize the parallel structure between the sub-cell groups and the sub-cell groups, and the parallel structure is simple and the series resistance is also relatively small.

[0014] In some embodiments, for the second horizontal scribe groove between the two adjacent sub-cell groups, a third additional horizontal scribe groove exists on the side adjacent to the closest first horizontal scribe groove along the second direction, and the third additional horizontal scribe groove extends from the third vertical short scribe groove to the third vertical long scribe groove along the first direction; the third additional horizontal scribe groove belongs to the third scribe groove group.

[0015] Alternatively, the semiconductor layers between the two adjacent groups of sub-cells are in contact.

[0016] In this way, by increasing the third scribing groove or controlling the semiconductor layers between the two adjacent groups of sub-cells to be in contact, the series connection between the adjacent sub-cell strings is avoided, and short circuit is avoided; at the same time, the series resistance can also be reduced by increasing the third scribing groove.

[0017] In some embodiments, the plurality of first scribing groove groups form a first scribing groove module, the plurality of second scribing groove groups form a second scribing groove module, and the plurality of third scribing groove groups form a third scribing groove module; the plurality of first scribing groove modules are arranged along the second direction, the first integral scribing groove in a first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other, and the first integral scribing groove in the first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the fourth side are located on the same side along the second direction and are connected to each other; the plurality of second scribing groove modules are arranged along the second direction, all the second integral scribing grooves are connected to form an integral whole, and all the third integral scribing grooves are connected to form an integral whole; the plurality of third scribing groove modules are arranged along the second direction, the fourth integral scribing groove in a third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the fourth side are located on the same side along the second direction and are isolated from each other; and the fourth integral scribing groove in the third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other; the third side and the fourth side are opposite along the second direction; wherein the sub-cells corresponding to a first scribing groove module, a second scribing groove module and a third scribing groove module form a battery module, and the different battery modules form a series connection.

[0018] In this way, a plurality of sub-cells are connected in series to form a sub-cell group, a plurality of sub-cell groups are connected in parallel to form a battery module, and a plurality of battery modules are connected in series, so that the thin-film battery can realize a series-parallel-series connection structure, and the connection mode is more flexible to adapt to the application requirements in different scenarios.

[0019] In some embodiments, the first horizontal scribing groove and the third horizontal scribing groove as a separation between two adjacent battery modules also extend to one of the edges of the thin-film battery along the first direction;

[0020] The two consecutive first horizontal scribing grooves as a separation respectively extend to different edges of the thin-film battery along the first direction, and the two consecutive third horizontal scribing grooves as a separation respectively extend to different edges of the thin-film battery along the first direction.

[0021] Since the bottom electrodes between adjacent first scribe slot modules are isolated and staggered in the first direction, and the top electrodes between adjacent third scribe slot modules are also isolated and staggered in the first direction, the current is conveniently led out.

[0022] In some embodiments, the semiconductor layer comprises a light-absorbing layer.

[0023] Thus, the thin-film battery can be a solar cell, thereby improving the service life and connection flexibility of the solar cell.

[0024] In some embodiments, the light-absorbing layer comprises a perovskite material.

[0025] Thus, the thin-film battery can be a perovskite solar cell, thereby improving the service life and connection flexibility of the perovskite solar cell.

[0026] In some embodiments, the semiconductor layer comprises a first transport layer, a light-absorbing layer, and a second transport layer stacked in sequence, wherein the first transport layer is one of a hole transport layer or an electron transport layer, and the second transport layer is the other of the hole transport layer or the electron transport layer.

[0027] Thus, the first transport layer and the second transport layer facilitate the extraction and transport of electron-hole pairs generated by the light-absorbing layer, thereby improving the charge transport efficiency of the solar cell.

[0028] In some embodiments, the thin-film battery satisfies one or more of conditions (1) to (3): (1) in the second direction, the distance between the first horizontal scribe slot and the closest second horizontal scribe slot is 1-50 microns; (2) the distance between the second horizontal scribe slot and the closest third horizontal scribe slot is 1-50 microns; and (3) the distance between the edge of the thin-film battery in the second direction and the closest first horizontal scribe slot is 1-10 millimeters.

[0029] In this way, the process difficulty can be reduced while reducing the dead area.

[0030] A second aspect of the present disclosure provides a method for manufacturing a thin-film battery, the method comprising:

[0031] providing a substrate;

[0032] forming a bottom electrode layer on the substrate, and cutting the bottom electrode layer to form a plurality of first scribe slot groups arranged in a second direction, and the first scribe slot groups retaining the bottom electrode layer on at least one side in a first direction; the first direction and the second direction intersecting;

[0033] forming a semiconductor layer on the bottom electrode layer, and cutting the semiconductor layer to form a second scribe slot group arranged in the second direction, and the second scribe slot group removing at least part of the semiconductor layer on both sides in the first direction;

[0034] forming a top electrode layer on the semiconductor layer, and cutting the top electrode layer to form a plurality of third scribe groove groups arranged along the second direction, and the third scribe groove groups retaining the top electrode layer on at least one side along the first direction;

[0035] wherein a first scribe groove group, a second scribe groove group and a third scribe groove group are used to isolate a group of sub-cells arranged along the second direction; in each group of sub-cells, the last sub-cell is electrically connected to the bottom electrode layer retained by the second side of the first scribe groove group, the first sub-cell is electrically connected to the top electrode layer retained by the first side of the third scribe groove group, and the first side and the second side are opposite along the first direction; the remaining sub-cells are electrically isolated from the bottom electrode layer retained around the first scribe groove group and the top electrode layer retained around the third scribe groove group; the first direction, the second direction and the third direction intersect with each other.

[0036] Thus, by retaining the bottom electrode layer and the top electrode layer on both sides, the bottom electrodes of different groups of sub-cells can be at the same potential, and the top electrodes can be at the same potential, realizing the parallel structure of different groups of sub-cells, avoiding breakdown of the blocked sub-cells, and prolonging the service life of the battery.

[0037] In some embodiments, a semiconductor layer is formed on the bottom electrode layer, and the semiconductor layer is cut to form a second scribe groove group arranged along the second direction, including:

[0038] forming a first transport layer, a light absorption layer and a second transport layer on the bottom electrode layer;

[0039] cutting the semiconductor layer to form a second scribe groove group arranged along the second direction;

[0040] removing the first transport layer, the light absorption layer and the second transport layer on both sides of the second scribe groove group along the first direction;

[0041] wherein the first transport layer is one of a hole transport layer or an electron transport layer, and the second transport layer is the other of a hole transport layer or an electron transport layer.

[0042] Thus, the specific structure of the light absorption layer and the removed part of the light absorption layer are provided, and the aforementioned preparation method is better implemented.

[0043] In some embodiments, each first scribe groove group includes a plurality of first horizontal scribe grooves, a first vertical long scribe groove and a first vertical short scribe groove; each second scribe groove group includes a plurality of second horizontal scribe grooves and two second vertical scribe grooves; each third scribe groove group includes a plurality of third horizontal scribe grooves, a third vertical long scribe groove and a third vertical short scribe groove, the first, second and third horizontal scribe grooves extend along the first direction and are arranged in parallel along the second direction, each first horizontal scribe groove is adjacent to one second horizontal scribe groove along the second direction, and each second horizontal scribe groove is adjacent to one third horizontal scribe groove along the second direction away from the closest first horizontal scribe groove; the second vertical scribe grooves, the first, third vertical long scribe grooves, the first and third vertical short scribe grooves extend along the second direction; all the first vertical long scribe grooves are connected end to end to form a first whole scribe groove, the first whole scribe groove intersects each first horizontal scribe groove; the first vertical short scribe groove intersects each first horizontal scribe groove in the first scribe groove group, and the first vertical short scribe grooves in adjacent first scribe groove groups are isolated from each other; one second vertical scribe groove in each second scribe groove group is connected end to end to form a second whole scribe groove, and another second vertical scribe groove in each second scribe groove group is connected end to end to form a third whole scribe groove, the second and third whole scribe grooves each intersect each second horizontal scribe groove; all the third vertical long scribe grooves are connected end to end to form a fourth whole scribe groove, and the fourth whole scribe groove intersects each third horizontal scribe groove; the third vertical short scribe groove intersects each third horizontal scribe groove in the third scribe groove group, and the third vertical short scribe grooves in adjacent third scribe groove groups are isolated from each other; the first, second whole scribe grooves and the third vertical short scribe groove are adjacent to the same edge of the thin-film battery along the first direction; the first vertical short scribe groove, the third whole scribe groove and the fourth whole scribe groove are adjacent to the other edge of the thin-film battery along the first direction; and the first, second and third horizontal scribe grooves each do not contact both edges of the thin-film battery along the first direction.

[0044] Thus, the scribe grooves in the horizontal direction can realize the mutual segmentation of different sub-cells and the series structure within the sub-cell group, and the scribe grooves in the vertical direction can reserve the bottom electrode layer and the top electrode layer on both sides to realize the parallel structure between the sub-cell groups and the sub-cell groups, and the parallel structure is simple and the series resistance is also relatively small.

[0045] In some embodiments, for the second horizontal scribe groove between the two adjacent sub-cell groups, a third additional horizontal scribe groove exists on the side adjacent to the closest first horizontal scribe groove along the second direction, and the third additional horizontal scribe groove extends from the third vertical short scribe groove to the third vertical long scribe groove along the first direction; the third additional horizontal scribe groove belongs to the third scribe groove group.

[0046] Alternatively, the semiconductor layers between the two adjacent groups of sub-cells are in contact.

[0047] In this way, by increasing the third scribing groove or controlling the semiconductor layers between the two adjacent groups of sub-cells to be in contact, the series connection between the adjacent sub-cell strings is avoided, and short circuit is avoided; at the same time, the series resistance can also be reduced by increasing the third scribing groove.

[0048] In some embodiments, the plurality of first scribing groove groups form a first scribing groove module, the plurality of second scribing groove groups form a second scribing groove module, and the plurality of third scribing groove groups form a third scribing groove module; the plurality of first scribing groove modules are arranged along the second direction, the first integral scribing groove in a first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other, and the first integral scribing groove in the first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the fourth side are located on the same side along the second direction and are connected to each other; the plurality of second scribing groove modules are arranged along the second direction, all the second integral scribing grooves are connected to form an integral whole, and all the third integral scribing grooves are connected to form an integral whole; the plurality of third scribing groove modules are arranged along the second direction, the fourth integral scribing groove in a third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the fourth side are located on the same side along the second direction and are isolated from each other; and the fourth integral scribing groove in the third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other; the third side and the fourth side are opposite along the second direction; wherein the sub-cells corresponding to a first scribing groove module, a second scribing groove module and a third scribing groove module form a battery module, and the different battery modules form a series connection.

[0049] In this way, a plurality of sub-cells are connected in series to form a sub-cell group, a plurality of sub-cell groups are connected in parallel to form a battery module, and a plurality of battery modules are connected in series, so that the thin-film battery can realize a series-parallel-series connection structure, and the connection mode is more flexible to adapt to the application requirements in different scenarios.

[0050] In some embodiments, the first horizontal scribing groove and the third horizontal scribing groove as a separation between two adjacent battery modules also extend to one of the edges of the thin-film battery along the first direction; the two consecutive first horizontal scribing grooves as a separation respectively extend to different edges of the thin-film battery along the first direction, and the two consecutive third horizontal scribing grooves as a separation respectively extend to different edges of the thin-film battery along the first direction.

[0051] Since the bottom electrodes between adjacent first scribe slot modules are isolated and staggered in the first direction, and the top electrodes between adjacent third scribe slot modules are also isolated and staggered in the first direction, it is convenient to lead out current.

[0052] The third aspect of the present disclosure provides a stacked cell, comprising the thin film cell of the first aspect of the present disclosure and a photoelectric conversion layer, the semiconductor layer at least comprising a light absorbing layer, the photoelectric conversion layer being located on one side of the light absorbing layer along a third direction; wherein the photoelectric conversion layer and the light absorbing layer have different bandgaps.

[0053] In some embodiments, the stacked cell comprises one or more of a mechanical stacked cell and a monolithic integrated stacked cell.

[0054] The fourth aspect of the present disclosure provides a photovoltaic system, comprising the thin film cell of the first aspect of the present disclosure or the stacked cell of the second aspect of the present disclosure.

[0055] The photovoltaic system of the present disclosure comprises the aforementioned thin film cell, and thus has at least the same advantages as the thin film cell or the stacked cell.

[0056] The fifth aspect of the present disclosure provides an electric device, comprising the thin film cell of the first aspect of the present disclosure or the stacked cell of the second aspect of the present disclosure.

[0057] The electric device of the present disclosure comprises the aforementioned thin film cell, and thus has at least the same advantages as the thin film cell or the stacked cell.

[0058] The sixth aspect of the present disclosure provides a power generation device, comprising the thin film cell of the first aspect of the present disclosure or the stacked cell of the second aspect of the present disclosure.

[0059] The power generation device of the present disclosure comprises the aforementioned thin film cell, and thus has at least the same advantages as the thin film cell or the stacked cell. BRIEF DESCRIPTION OF DRAWINGS

[0060] FIG. 1 is a schematic diagram of a manufacturing process of a thin film cell according to an embodiment of the present disclosure.

[0061] FIG. 2 is a schematic diagram of a cross-section of a thin film cell according to an embodiment of the present disclosure.

[0062] FIG. 3 is a schematic diagram of an electrical connection structure of a thin film cell according to an embodiment of the present disclosure.

[0063] FIG. 4A is a schematic diagram of a cross-section of a thin film cell according to an embodiment of the present disclosure.

[0064] FIG. 4B is a schematic diagram of a cross-section of a thin film cell according to an embodiment of the present disclosure.

[0065] FIG. 5 is a schematic diagram of a cross-section of a thin film cell according to an embodiment of the present disclosure.

[0066] Fig. 6A is a cross-sectional view of a thin-film battery according to an embodiment of the present disclosure.

[0067] Fig. 6B is a perspective view of a thin-film battery according to an embodiment of the present disclosure.

[0068] Fig. 7A is a cross-sectional view of a thin-film battery according to an embodiment of the present disclosure.

[0069] Fig. 7B is a perspective view of a thin-film battery according to an embodiment of the present disclosure.

[0070] Fig. 8A is a cross-sectional view of a thin-film battery according to an embodiment of the present disclosure.

[0071] Fig. 8B is a schematic view of an electrical connection structure of a thin-film battery according to an embodiment of the present disclosure.

[0072] Fig. 9 is a cross-sectional view of a thin-film battery according to an embodiment of the present disclosure.

[0073] Fig. 10 is a schematic view of a process of manufacturing a thin-film battery according to an embodiment of the present disclosure.

[0074] Fig. 11 is a schematic view of a process of manufacturing a thin-film battery according to an embodiment of the present disclosure.

[0075] Figs. 12A to 12C are schematic views of a process of manufacturing a thin-film battery according to an embodiment of the present disclosure.

[0076] Fig. 13 is a schematic view of a photovoltaic system according to an embodiment of the present disclosure.

[0077] Fig. 14 is a schematic view of an electrical device according to an embodiment of the present disclosure.

[0078] Fig. 15 is a schematic view of a power generation device according to an embodiment of the present disclosure.

[0079] Reference signs are as follows: 10 - thin-film battery; 11 - substrate; 12 - bottom electrode layer; 13 - semiconductor layer; 131 - first transport layer; 132 - light-absorbing layer; 133 - second transport layer; 14 - top electrode layer; P1a - first horizontal scribe groove; P1b - first vertical long scribe groove; P1c - first vertical short scribe groove; P2a - second horizontal scribe groove; P2b - second vertical scribe groove; P3a - third horizontal scribe groove; P3a' - third additional horizontal scribe groove; P3b - third vertical long scribe groove; P3b - third vertical short scribe groove; 60 - photovoltaic system; 70 - electrical device; 80 - power generation device. DETAILED DESCRIPTION

[0080] Hereinafter, specific embodiments of the thin film battery and the method of manufacturing the same, the photovoltaic system, the power consuming and generating device of the present disclosure will be described in detail with appropriate reference to the accompanying drawings. However, there will be cases where unnecessary detailed description is omitted. For example, there will be cases of omitting detailed description of matters known to those skilled in the art, repeated description of substantially identical configurations. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. Furthermore, the accompanying drawings and the following description are provided to allow those skilled in the art to fully understand the present disclosure, and are not intended to limit the subject matter recited in the claims.

[0081] The ranges disclosed herein are defined by their lower and upper limits. Ranges that include both a lower limit and an upper limit are defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the range. Ranges can be either inclusive or exclusive of the end values, and can be arbitrarily combined, i.e., any lower limit can be combined with any upper limit to form a range. For example, if a range is listed as 60-120 and 80-110, it is understood that the ranges 60-110 and 80-120 are also contemplated. Furthermore, if a minimum range value of 1 and 2 is listed, and if a maximum range value of 3, 4, and 5 is listed, then the following ranges are all contemplated: 1-3, 1-4, 1-5, 2-3, 2-4, and 2-5. In the present disclosure, unless otherwise stated, a numerical range "a-b" indicates a shorthand manner of describing a range of any integers between a and b, wherein a and b are both integers. For instance, the numerical range "0-5" indicates that all integers between "0-5" have been listed herein, and "0-5" is merely a shorthand manner of describing these numerical combinations. Also, when a parameter is stated to be an integer ≥ 2, it is equivalent to disclose that the parameter is, for example, integer 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0082] Unless otherwise specified, all embodiments and optional embodiments of the present disclosure can be combined with each other to form new technical solutions.

[0083] Unless otherwise specified, all technical features and optional technical features of the present disclosure can be combined with each other to form new technical solutions.

[0084] Unless otherwise specified, all steps of the present disclosure can be performed in sequence or randomly, and preferably in sequence. For example, a method comprising steps (a) and (b) indicates that the method can comprise steps (a) and (b) performed in sequence, or steps (b) and (a) performed in sequence. For example, it is mentioned that the method can further comprise step (c), which indicates that step (c) can be added to the method in any order. For example, the method can comprise steps (a), (b) and (c), or steps (a), (c) and (b), or steps (c), (a) and (b), etc.

[0085] The terms used in the present disclosure have the meanings commonly understood by those skilled in the art, unless otherwise specified.

[0086] The values of the parameters mentioned in the present disclosure can be measured by various test methods commonly used in the art, for example, according to the test methods given in the present disclosure, unless otherwise specified.

[0087] The semiconductor layer material of the thin-film solar module (thin-film cell) can absorb photons and be excited to form electron-hole pairs, and then the carriers are selectively extracted by the interface layer and led out through the electrode layer, and the carriers form a complete loop through the external load. The conventional thin-film solar module (thin-film cell) generally adopts the method of laser scribing P1, P2, P3 to connect the single sub-cells on the module in series with each other. Please refer to FIG. 1, which shows the series connection mode of the conventional thin-film solar module. As shown in FIG. 1, taking the formal perovskite structure as an example, the forming process is as follows:

[0088] (1) First, a substrate 11 (for example, glass) with a bottom electrode layer 12 (for example, transparent conductive oxide) deposited thereon is provided, and a plurality of parallel first scribe grooves P1 are cut by laser scribing process, and the first scribe grooves P1 cut through the bottom electrode layer 12;

[0089] (2) Second, continue to deposit a semiconductor layer 13, which at least includes a light-absorbing layer 132 (for example, perovskite layer). Alternatively, as shown in FIG. 1, the semiconductor layer 13 includes a first transport layer 131, a light-absorbing layer 132, and a second transport layer 133 from bottom to top; for formal cell structure, the first transport layer 131 can be an electron transport layer, and the second transport layer 133 can be a hole transport layer; for reverse cell structure, the first transport layer 131 can be a hole transport layer, and the second transport layer 133 can be an electron transport layer. Alternatively, the semiconductor layer 13 can also include a blocking layer, which is located below the first transport layer 131 for formal cell structure, and which is located above the second transport layer 133 for reverse cell structure.

[0090] (3) Third, a second scribe groove P2 is cut by laser scribing process on the right side of each first scribe groove P1, and the second scribe groove P2 cuts through the semiconductor layer 13;

[0091] (4) Then, continue to deposit a top electrode layer 14;

[0092] (5) Finally, a third scribe groove P3 is cut by laser scribing process on the right side of each second scribe groove P2, and the third scribe groove P3 cuts through the top electrode layer; alternatively, the third scribe groove P3 cuts through the top electrode layer 14 and the semiconductor layer 13 at the same time.

[0093] In brief, the first scribe groove P1, the second scribe groove P2 and the third scribe groove P3 are arranged in sequence. The first scribe groove P1 separates the bottom electrodes of each sub-cell, and then the semiconductor layer is deposited. The second scribe groove P2 cuts the semiconductor layer to the bottom electrode along the edge of the first scribe groove P1, so that the top electrode can contact the bottom electrode when the top electrode is deposited, thereby forming a series structure. The third scribe groove P3 cuts the top electrode and the semiconductor layer along the edge of the second scribe groove P2 to prevent short circuit between adjacent two sub-cells, so that the sub-cells in the entire thin film battery assembly present a full series structure. In this full series structure, when a single sub-cell is shaded, the hot spot effect will cause it to withstand a reverse bias. When the sub-cell is completely shaded, the reverse voltage it withstands can reach the sum of the voltages generated by the remaining sub-cells in the series circuit (more than 100V), thereby breaking the shaded sub-cell. That is, the thin film battery with the full series structure is easy to be broken when a single sub-cell is shaded.

[0094] It can be understood that at least part of the semiconductor layer 13 can be filled in the first scribe groove P1, or the entire semiconductor layer 13 can be filled, or an insulating material or other semiconductor material can be filled to separate the bottom electrode layer 12 between adjacent two sub-cells.

[0095] It can be understood that the second scribe groove P2 can directly fill the deposited top electrode layer to connect the bottom electrode layers of adjacent sub-cells, thereby achieving series connection of the two adjacent sub-cells. Further, the material filled here can also be different from the conductive material of the top electrode layer, and can also be other conductive materials, as long as it can achieve circuit connection of the connected two sub-cells. Optionally, it can be a strong conductive material, such as Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, alloys thereof, graphite, graphene, carbon nanotubes, etc. Further, the second scribe groove P2 can also deposit other materials, such as a film layer capable of blocking the contact between the internally filled conductive material and the semiconductor layer, such as a metal oxide film layer, a polymer layer, etc. which do not react with the conductive material and the semiconductor layer.

[0096] It can be understood that the third scribe groove P3 can also be filled with an insulating material or other semiconductor material to separate the top electrode layer 14 between adjacent two sub-cells, which is not limited here.

[0097] It can be further understood that the scribe grooves with similar functions to the first scribe groove P1, the second scribe groove P2 and the third scribe groove P3 in the present disclosure can also be filled with or not filled with the corresponding materials or film layers according to the above content.

[0098] In an embodiment of the present disclosure, please refer to FIG. 2, which shows a schematic diagram of a thin film battery 20 provided by an embodiment of the present disclosure. As shown in FIG. 2, the thin film battery 20 includes a substrate, a bottom electrode layer, a semiconductor layer and a top electrode layer which are stacked in sequence.

[0099] Referring to FIG. 2(a), a schematic top view of the bottom electrode layer is shown. The thin-film battery 20 further comprises a plurality of first scribe groove groups arranged along the second direction, the first scribe groove groups being used to cut the bottom electrode layer along the third direction, and the first scribe groove groups leaving the bottom electrode layer on at least one side along the first direction. For FIG. 2(a), except for the thickened overall outer frame, the internal solid lines are first scribe grooves P1, which can be divided into a plurality of first scribe groove groups. The first direction, the second direction, and the third direction intersect with each other, and the figure only schematically shows that the first direction, the second direction, and the third direction are perpendicular to each other, but this does not constitute a limitation.

[0100] Referring to FIG. 2(b), a schematic top view of the semiconductor layer is shown. The thin-film battery 20 further comprises a plurality of second scribe groove groups arranged along the second direction, the second scribe groove groups being used to cut at least the semiconductor layer along the third direction, and the second scribe groove groups removing at least part of the semiconductor layer on both sides along the first direction. For FIG. 2(b), except for the thickened outer frame, the internal solid lines are second scribe grooves P2, which can be divided into a plurality of second scribe groove groups.

[0101] Referring to FIG. 2(c), a schematic top view of the top electrode layer is shown. The thin-film battery 20 further comprises a plurality of third scribe groove groups arranged along the second direction, the third scribe groove groups being used to cut the top electrode layer and the semiconductor layer along the third direction, and the third scribe groove groups leaving the top electrode layer on at least one side along the first direction. For FIG. 2(c), except for the thickened outer frame, the internal solid lines are third scribe grooves P3, which can be divided into a plurality of third scribe groove groups.

[0102] In particular, FIGS. 2(a), (b), and (c) are stacked along the third direction in sequence, and the figure only facilitates the display of separating them.

[0103] It should be noted that a first scribe groove group, a second scribe groove group, and a third scribe groove group are used to isolate a group of sub-batteries arranged along the second direction. FIG. 2 shows four groups of sub-batteries, the first scribe groove group 1 / the second scribe groove group 1 / the third scribe groove group 1 isolates the first group of sub-batteries, the first scribe groove group 2 / the second scribe groove group 2 / the third scribe groove group 2 isolates the second group of sub-batteries, and so on, and each group of sub-batteries specifically includes four sub-batteries.

[0104] It should be noted that the above specific numbers are only examples and do not constitute a limitation. That is, the number of sub-battery groups and the number of sub-batteries in each group can be any positive integer, depending on the work requirements, for example, FIG. 4A, each group of sub-batteries includes eight sub-batteries.

[0105] In some embodiments, the number of sub-cells in different groups can be different. For example, as shown in FIG. 5, the first group of sub-cells includes 3 sub-cells, the second group of sub-cells includes 1 sub-cell, the third group of sub-cells includes 4 sub-cells, and so on.

[0106] It should be noted that, first, through the scribe groove extending in the first direction in the first group of scribe grooves / the second group of scribe grooves / the third group of scribe grooves, the adjacent sub-cells in each group are in a series relationship, and the specific principle can be referred to FIG. 1.

[0107] Secondly, the scribe groove is essentially used to achieve electrical isolation, that is, the area without the scribe groove can be regarded as electrical connection. Please refer to FIG. 2, in each group of sub-cells, the last sub-cell (for example, sub-cell 4 in FIG. 2(a)) is electrically connected with the bottom electrode layer reserved on the second side of the first group of scribe grooves, the first sub-cell (for example, sub-cell 1 in FIG. 2(c)) is electrically connected with the top electrode layer reserved on the first side of the third group of scribe grooves, and the first side and the second side are opposite in the first direction; the rest of the sub-cells are electrically isolated from the bottom electrode layer reserved around the first group of scribe grooves and the top electrode layer reserved around the third group of scribe grooves. That is, please refer to (a) in FIG. 2, the sub-cell 4 in all groups is at the same potential with the bottom electrode layer reserved on the right side; please refer to (c) in FIG. 2, the sub-cell 1 in all groups is at the same potential with the top electrode layer reserved on the left side. In this way, the bottom electrodes of the sub-cells 4 in different groups are connected together, and the top electrodes of the sub-cells 1 in different groups are connected together, so that the whole formed by the first group of sub-cells, the whole formed by the second group of sub-cells, the whole formed by the third group of sub-cells, and the whole formed by the fourth group of sub-cells are in a parallel relationship, which can be referred to the equivalent circuit diagram in FIG. 3.

[0108] In particular, in the present embodiment, the "last sub-cell" and the "first sub-cell" are only used to indicate the two sub-cells at the outermost side in each group of sub-cells, and do not have an absolute definition. For example, sub-cell 1 is regarded as the last sub-cell in the group, and sub-cell 4 is regarded as the first sub-cell in the group, at this time, the scribe groove pattern in FIG. 2 also needs to be changed correspondingly.

[0109] In some embodiments, the semiconductor layer includes an absorption layer, the material of the light absorption layer can absorb photons and be excited to generate electrons and holes, and then the carriers are selectively extracted by the interface layer and then led out through the electrode layer, and the carriers form a complete loop through an external load. Further, the light absorption layer includes a perovskite material.

[0110] In some embodiments, the semiconductor layer comprises a first transport layer, a light absorbing layer and a second transport layer stacked in sequence, wherein the first transport layer is one of a hole transport layer or an electron transport layer, and the second transport layer is the other of the hole transport layer or the electron transport layer. The electron transport layer is capable of transporting electrons and blocking holes, the hole transport layer is capable of transporting holes and blocking electrons, and the electron transport layer and the hole transport layer are capable of increasing the transport rate of electrons / holes. For example, in a formal perovskite solar cell, the first transport layer is an electron transport layer and the second transport layer is a hole transport layer, and in a reverse perovskite solar cell, the first transport layer is a hole transport layer and the second transport layer is an electron transport layer. In some embodiments, the semiconductor layer can only comprise the first transport layer or the second transport layer, and the first transport layer or the second transport layer is stacked on one side of the light absorbing layer along the third direction. In one embodiment, the thin-film battery can further comprise a blocking layer disposed on the side of the electron transport layer away from the light absorbing layer for blocking the transport of holes. In another embodiment, the thin-film battery can further comprise a passivation layer for passivating material defects in the light absorbing layer. The specific selection of materials for each layer can be found in the subsequent description. Of course, the thin-film battery can further form a stacked battery, such as a perovskite-perovskite stacked battery.

[0111] In some embodiments, referring to FIGS. 2 and 3, the bottom electrode of each sub-cell except the last sub-cell in each group is electrically connected to the top electrode of the adjacent next sub-cell, so that the plurality of sub-cells in the same group are in series connection. For example, in FIG. 2, sub-cell 1, sub-cell 2, sub-cell 3 and sub-cell 4 in each group are in series connection in sequence, and it should be understood that the adjacent sub-cells are in series connection through the dashed slots P1, P2 and P3, which will be further described later.

[0112] The bottom electrode of the last sub-cell in each group of sub-cells is electrically isolated (not in series connection) from the top electrode of the first sub-cell in the adjacent other group of sub-cells, i.e., sub-cell 4 in the first group is not in series connection with sub-cell 1 in the second group, sub-cell 4 in the second group is not in series connection with sub-cell 1 in the third group, and sub-cell 4 in the third group is not in series connection with sub-cell 1 in the fourth group. At the same time, the bottom electrode of the last sub-cell in all groups of sub-cells is electrically connected (achieved by “the last sub-cell in each group is electrically connected to the bottom electrode layer reserved on one side of the first group of dashed slots”), and the top electrode of the first sub-cell in all groups of sub-cells is electrically connected (achieved by “the first sub-cell is electrically connected to the top electrode layer reserved on one side of the third group of dashed slots”), so that the sub-cells in different groups are in parallel connection.

[0113] In this way, on the one hand, the embodiment can directly form the series-parallel structure of the sub-cells at the process level by adjusting the scribe groove pattern, thereby allowing flexible process-level circuit design, without the need to realize the series-parallel structure by means of auxiliary wires / parallel devices at the assembly level, which not only improves the design flexibility of the thin-film battery but also simplifies the process and reduces the cost, and meanwhile, the corresponding positive and negative electrodes of the sub-cells do not need to be led out and then connected in parallel by means of parallel devices, so that the overall circuit area is relatively small. On the other hand, since the thin-film battery is not a full series structure but a series-parallel structure, the overall voltage of the thin-film battery is relatively small, and when a single sub-cell is shaded, the reverse bias (equivalent to the overall voltage) it receives is also relatively small, the reverse bias received by the shaded sub-cell is reduced, and the shaded sub-cell is borne by the sub-cell group in which the shaded sub-cell is located and all the sub-cell groups in parallel with the shaded sub-cell, thereby avoiding breakdown of the shaded sub-cell and prolonging the service life of the battery.

[0114] In some embodiments, referring to FIG. 2, the first side and the second side of each first scribe groove group both retain the bottom electrode layer, and the first side and the second side of each third scribe groove group both retain the top electrode layer; the first side and the second side are opposite along the first direction; in each group of sub-cells, the last sub-cell is electrically connected with the bottom electrode layer retained by the second side and is isolated from the bottom electrode layer retained by the first side, and the first sub-cell is electrically isolated from the top electrode layer retained by the second side and is electrically connected with the top electrode layer retained by the first side; the remaining sub-cells are each electrically isolated from the bottom electrode layers retained by the first side and the second side, and the remaining sub-cells are each electrically isolated from the top electrode layers retained by the first side and the second side.

[0115] In this way, referring to (a) in FIG. 2, the bottom electrodes of all the sub-cells 4 in all the groups are electrically connected with the bottom electrode layer retained by the right side, thereby realizing parallel connection of the bottom electrodes; referring to (c) in FIG. 2, the top electrodes of all the sub-cells 1 in all the groups are electrically connected with the top electrode layer retained by the left side, thereby realizing parallel connection of the top electrodes. The bottom electrode of the sub-cell 1 is isolated from the bottom electrode of the adjacent sub-cell 2, the bottom electrode of the sub-cell 2 is isolated from the bottom electrode of the adjacent sub-cell 3, the bottom electrode of the sub-cell 3 is isolated from the bottom electrode of the adjacent sub-cell 4, the bottom electrode of the sub-cell 4 is isolated from the bottom electrode of the adjacent sub-cell 1, and the top electrodes are also isolated, thereby forming a series connection within each group only by P1, P2 and P3 extending along the first direction.

[0116] In some embodiments, referring to FIG. 4A, each first scribe groove group includes a plurality of first horizontal scribe grooves P1a, a first vertical long scribe groove P1b and a first vertical short scribe groove P1c; each second scribe groove group includes a plurality of second horizontal scribe grooves P2a and two second vertical scribe grooves P2b; and each third scribe groove group includes a plurality of third horizontal scribe grooves P3a, a third vertical long scribe groove P3b and a third vertical short scribe groove P3.

[0117] It should be noted that the horizontal scribe grooves described above all extend along the first direction and are arranged in parallel along the second direction. Each first horizontal scribe groove P1a has a second horizontal scribe groove P2a on one side (e.g. the lower side or the upper side, the distance can be selected to be 1-50 microns) along the second direction. Each second horizontal scribe groove P2a has a third horizontal scribe groove P3a on the side (e.g. the lower side or the upper side, the distance can be selected to be 1-50 microns) away from the closest first horizontal scribe groove P1a along the second direction. That is, in the second direction, the distance between the first horizontal scribe groove and the closest second horizontal scribe groove is 1-50 microns, and the distance between the second horizontal scribe groove and the closest third horizontal scribe groove is 1-50 microns.

[0118] It should be understood that in FIG. 4A, the first horizontal scribe groove P1a, the second horizontal scribe groove P2a, and the third horizontal scribe groove P3a are sequentially moved upward. In other embodiments, the first horizontal scribe groove P1a, the second horizontal scribe groove P2a, and the third horizontal scribe groove P3a can be sequentially moved downward, but the etching patterns of the first scribe groove group and the third scribe groove group need to be adjusted.

[0119] The vertical scribe grooves, the vertical long scribe grooves, and the vertical short scribe grooves described above all extend along the second direction.

[0120] Referring to FIG. 4A, the first vertical long scribe groove P1b in each first scribe groove group is connected at both ends to form a first integral scribe groove (which can be obtained by integral scribing in the process), the first integral scribe groove has an intersection with each first horizontal scribe groove P1a, the first vertical short scribe groove P1c has an intersection with each first horizontal scribe groove P1a in the first scribe groove group to which it belongs, and the first vertical short scribe grooves P1c in adjacent first scribe groove groups are isolated from each other. At the same time, the first integral scribe groove P1b is close to the left edge of the thin-film battery 20, and the first vertical short scribe groove P1c is close to the right edge of the thin-film battery 20. The first horizontal scribe groove P1a does not contact both edges of the thin-film battery 20 along the first direction.

[0121] In this way, through the first integral scribe groove P1b, all the sub-batteries are electrically isolated from the bottom electrode layer retained on the left side; through the first vertical short scribe groove P1c, the sub-batteries 1-7 in each group of sub-batteries are electrically isolated from the bottom electrode layer retained on the right side, and the sub-battery 8 is electrically connected to the bottom electrode layer retained on the right side.

[0122] As shown in FIG. 4A, the second vertical long scribe groove P2b in each of the second scribe groove groups is connected at its ends to form a second integral scribe groove, and another second vertical long scribe groove P2b in each of the second scribe groove groups is connected at its ends to form a third integral scribe groove, each of the second integral scribe groove and the third integral scribe groove has an intersection with each of the second horizontal scribe groove P2a, the second integral scribe groove is close to the left edge of the thin-film battery 20, and the third integral scribe groove is close to the right edge of the thin-film battery 20; each of the second horizontal scribe groove P2a does not contact both edges of the thin-film battery 20 along the first direction. In this way, the semiconductor layer on the left and the right can be removed (the bottom electrode layer is reserved) through the second integral scribe groove and the third integral scribe groove, so as to realize the electrical isolation of all the sub-cells.

[0123] As shown in FIG. 4A, the second vertical long scribe groove P2b in each of the second scribe groove groups is connected at its ends to form a second integral scribe groove, and another second vertical long scribe groove P2b in each of the second scribe groove groups is connected at its ends to form a third integral scribe groove, each of the second integral scribe groove and the third integral scribe groove has an intersection with each of the second horizontal scribe groove P2a, the second integral scribe groove is close to the left edge of the thin-film battery 20, and the third integral scribe groove is close to the right edge of the thin-film battery 20; each of the second horizontal scribe groove P2a does not contact both edges of the thin-film battery 20 along the first direction. In this way, the semiconductor layer on the left and the right can be removed (the bottom electrode layer is reserved) through the second integral scribe groove and the third integral scribe groove, so as to realize the electrical isolation of all the sub-cells.

[0124] That is, the first integral scribe groove, the second integral scribe groove, and the third vertical short scribe groove are close to the same edge of the thin-film battery along the first direction, and optionally, the distances from the edge are equal; the first vertical short scribe groove, the third integral scribe groove, and the fourth integral scribe groove are close to the other edge of the thin-film battery along the first direction, and optionally, the distances from the edge are equal.

[0125] It should be understood that, in FIG. 4A, the first horizontal scribe groove P1a is located between the first vertical long scribe groove P1b and the first vertical short scribe groove P1c, but this is only an example, the first horizontal scribe groove P1a can extend to the outside of the first vertical long scribe groove and the outside of the first vertical short scribe groove, but cannot reach the edge of the thin-film battery 20 or the bottom electrode layer outside the reserved sub-cells for parallel connection between the sub-cell groups along the first direction, specifically, the first horizontal scribe groove P1a cannot be completely scribed to the right edge along the first direction. The same applies to the second horizontal scribe groove P2a and the third horizontal scribe groove P3a.

[0126] The second horizontal scribe groove P2a is filled with a top electrode layer material or other conductive material that can connect the top electrode layer and the bottom electrode layer, so as to realize the electrical connection between the bottom electrode of a sub-cell and the top electrode of the adjacent next sub-cell, so that the multiple sub-cells in the same group of sub-cells are in series connection. Alternatively, the second horizontal scribe groove P2a is filled with a top electrode layer material, so that the deposition of the top electrode layer can be directly realized, which is simple and reduces the preparation process.

[0127] It should be understood that the first side along the first direction in the embodiments of the present disclosure refers to the left side, and the second side along the first direction refers to the right side, but this is only for the convenience of description and understanding, and the first side and the second side are opposite to the first direction, and there is no specific limitation.

[0128] In some embodiments, each first horizontal scribe groove P1a cuts the bottom electrode layer, and in the case where the semiconductor layer includes a first transport layer, a light absorption layer and a second transport layer stacked in sequence, each first horizontal scribe groove P1a optionally cuts the bottom electrode layer or cuts the bottom electrode layer and the first transport layer. In some embodiments, each second horizontal scribe groove P2a cuts the semiconductor layer, and in the case where the semiconductor layer includes a first transport layer, a light absorption layer and a second transport layer stacked in sequence, each second horizontal scribe groove P2a cuts the second transport layer, the light absorption layer and the first transport layer.

[0129] Each of the above scribe grooves can be obtained by a laser scribing process. The first horizontal scribe groove P1a, the first vertical long scribe groove P1b and the first vertical short scribe groove P1c are obtained by laser P1 etching. The second horizontal scribe groove P2a and the second vertical scribe groove P2b are obtained by laser P2 etching. The third horizontal scribe groove P3a, the third vertical long scribe groove P3b and the third vertical short scribe groove P3c are obtained by laser P3 etching.

[0130] In some embodiments, referring to FIG. 4B, the thin-film battery 20 can also have a clean edge area, and the size, shape and position of the clean edge area are flexible. For example, as shown in FIG. 5, the first horizontal scribe groove P1a, the second horizontal scribe groove P2a and the third horizontal scribe groove P3a are added closest to the upper edge of the thin-film battery 20 along the second direction, and the added first horizontal scribe groove P1a, the second horizontal scribe groove P2a and the third horizontal scribe groove P3a respectively extend to the two edges of the thin-film battery 20 along the first direction. At the same time, the projections of the three horizontal scribe grooves along the third direction coincide, so as to isolate a clean edge area above the thin-film battery 20, facilitating packaging.

[0131] The first horizontal scribe groove P1a, the second horizontal scribe groove P2a and the third horizontal scribe groove P3a are also added at the lower edge of the thin film battery 20 closest to the second direction, and the added first horizontal scribe groove P1a, the second horizontal scribe groove P2a and the third horizontal scribe groove P3a respectively extend to the two edges of the thin film battery 20 along the first direction. At the same time, the projections of the three horizontal scribe grooves along the third direction coincide, thereby isolating the edge cleaning area below the thin film battery 20, facilitating packaging.

[0132] Here, the distance between the edge of the thin film battery 20 along the second direction and the closest first horizontal scribe groove is 1-10 mm, that is, the width of the edge cleaning area in the second direction is about 1-10 mm. Those skilled in the art can also adjust the width of the edge cleaning area according to actual needs, such as increasing the edge cleaning area to place bus bars and other structures.

[0133] In some embodiments, referring to FIG. 6A, for the second horizontal scribe groove P2a between the two adjacent groups of sub-batteries, a third additional horizontal scribe groove P3a' exists on the side (such as the upper side or the lower side, the distance can be selected to be 1-50 microns) closest to the closest first horizontal scribe groove, and the third additional horizontal scribe groove P3a' extends from the third vertical long scribe groove P3b to the third vertical short scribe groove P3c along the first direction.

[0134] At the same time, the relative position of the third additional horizontal scribe groove P3a' to the closest first horizontal scribe groove P1a is not limited, that is, in FIG. 6A, the third additional horizontal scribe groove P3a' can be located on the left side of the first horizontal scribe groove P1a or on the right side.

[0135] Here, the third additional horizontal scribe groove P3a' is obtained by the same laser P3 as the third horizontal scribe groove, the third vertical long scribe groove and the third vertical short scribe groove, that is, the third additional horizontal scribe groove P3a' is a scribe groove of the third scribe groove group. That is, the third additional horizontal scribe groove P3a' can also only cut the top electrode layer, or can cut the top electrode layer and the semiconductor layer.

[0136] In this way, for the second horizontal scribe groove P2a between the two adjacent groups of sub-batteries, the third additional horizontal scribe groove P3a' exists on the lower side, and the third horizontal scribe groove P3a exists on the upper side. Referring to FIG. 6B, there is actually a small piece of useless top electrode between the top electrode of the first group of sub-batteries 8 and the top electrode of the adjacent second group of sub-batteries 1 (between P3a' and P3a), and the bottom electrode of the first group of sub-batteries 8 is connected to this piece of useless top electrode through P2a, without forming a series connection with the adjacent second group of sub-batteries 1.

[0137] In other embodiments, the third scribe groove P3a' can also be selected not to be added, and the semiconductor layer between the two adjacent groups of sub-cells is in contact. For example, referring to FIG. 7B, one of the specific means can be that the second horizontal scribe groove P2a between the two adjacent groups of sub-cells is not scribed; and for another example, the second specific means can be that the second horizontal scribe groove P2a between the two adjacent groups of sub-cells is filled with insulating material.

[0138] Therefore, referring to FIG. 7B, there is no second horizontal scribe groove P2a between the two adjacent groups of sub-cells, and thus the bottom electrode of the first group of sub-cells 8 cannot form a series connection with the top electrode of the adjacent second group of sub-cells 1, but the resistance of the series connection will be larger.

[0139] In some embodiments, referring to FIG. 8A, a plurality of first scribe groove groups form a first scribe groove module, a plurality of second scribe groove groups form a second scribe groove module, and a plurality of third scribe groove groups form a third scribe groove module.

[0140] As shown in FIG. 8A, a plurality of first scribe groove modules are arranged along the second direction. The first integral scribe groove (formed by the connection of the first vertical long scribe groove P1b) in a first scribe groove module and the first vertical short scribe groove P1c in the first scribe groove module adjacent to the third side (for example, the upper side) are located on the same side along the second direction and are isolated from each other. The first integral scribe groove in the first scribe groove module and the first vertical short scribe groove P1c in the first scribe groove module adjacent to the fourth side (for example, the lower side) are located on the same side along the second direction and are connected to each other. As shown in FIG. 8A, P1b of the first scribe groove module 1 is connected to P1c of the first scribe groove module 2, P1b of the first scribe groove module 2 is isolated from P1c of the first scribe groove module 1 but is connected to P1c of the first scribe groove module 3, and P1b of the first scribe groove module 3 is isolated from P1c of the first scribe groove module 2.

[0141] A plurality of second scribe groove modules are arranged along the second direction. All the second integral scribe grooves are connected to form an integral whole, and all the third integral scribe grooves are connected to form an integral whole.

[0142] As shown in FIG. 8A, a plurality of third scribe groove modules are arranged along the second direction, the fourth integral scribe groove (connected by the third vertical long scribe groove P3b) in a third scribe groove module is located on the same side along the second direction and is isolated from the third vertical short scribe groove P3c in the third scribe groove module adjacent to the fourth side (for example, the lower side); the fourth integral scribe groove in a third scribe groove module is located on the same side along the second direction and is isolated from the third vertical short scribe groove P3c in the third scribe groove module adjacent to the third side (for example, the upper side); the third side and the fourth side are opposite along the second direction. As shown in FIG. 8A, P3b of the third scribe groove module 1 is isolated from P3c of the third scribe groove module 2, P3b of the third scribe groove module 2 is connected to P3c of the third scribe groove module 1 but is isolated from P3c of the third scribe groove module 3; P3b of the third scribe groove module 3 is connected to P3c of the third scribe groove module 2.

[0143] Wherein, the corresponding sub-cells of a first scribe groove module, a second scribe groove module and a third scribe groove module form a battery module, and the different battery modules form a series connection. As shown in FIG. 8A, the first scribe groove module 1, the second scribe groove module 1 and the third scribe groove module 1 form the first battery module, the first scribe groove module 2, the second scribe groove module 2 and the third scribe groove module 2 form the second battery module, the first scribe groove module 3, the second scribe groove module 3 and the third scribe groove module 3 form the third battery module, and the first battery module, the second battery module and the third battery module form a parallel connection, please refer to FIG. 8B for details.

[0144] It should be understood that for each second horizontal scribe groove P2a between two adjacent groups of sub-cells, there is a third additional horizontal scribe groove P3a' on the side close to the nearest first horizontal scribe groove P1a along the second direction, as shown in FIG. 8A and FIG. 9. Alternatively, the semiconductor layers between the two adjacent groups of sub-cells are in contact (for example, by not scribing the second horizontal scribe groove P2a between the two adjacent groups of sub-cells), and since the implementation means are various, the scribe groove pattern of FIG. 8A and FIG. 9 does not show this part, but can be understood in combination with FIG. 6A or FIG. 7A.

[0145] It should be noted that the adjacent first scribe groove modules are approximately in mirror image relationship along the first direction (embodied as mirror image relationship left and right in combination with the drawings), and the adjacent third scribe groove modules are in mirror image relationship along the first direction (embodied as mirror image relationship left and right in combination with the drawings), so that the bottom electrodes of the adjacent battery modules are respectively on the left and right sides, the top electrodes of the adjacent battery modules are respectively on the left and right sides, and the bottom electrodes and the top electrodes of the same battery module are also respectively on the left and right sides, so that the bottom electrodes and the top electrodes of the adjacent battery modules are directly connected to form a series connection. Specifically, please refer to (a) in FIG. 8A, the bottom electrode of the first battery module (corresponding to the first scribe groove module 1) is on the left side of the first scribe groove module 1 and the first scribe groove module 2, please refer to (c) in FIG. 8A, the top electrode of the second battery module is on the left side of the first scribe groove module 1 and the first scribe groove module 2, so that the bottom electrode of the first battery module and the top electrode of the second battery module are electrically connected, thereby realizing the series connection.

[0146] In this way, the series-parallel-series structure can also be realized in the thin-film battery 20, thereby allowing flexible process-level circuit design, without the need to realize the series-parallel-series structure by means of auxiliary wires / parallel devices at the component level, which not only improves the design flexibility of the thin-film battery but also simplifies the process and reduces the cost, and the circuit area is relatively small; on the other hand, since the thin-film battery is not a full series structure but a series-parallel-series structure, the overall voltage of the thin-film battery is relatively small, and when a single sub-cell is shaded, the reverse bias voltage (equivalent to the overall voltage) it receives is also relatively small, and is borne by the sub-cell group in which the shaded sub-cell is located and all the sub-cell groups in parallel with it, avoiding breakdown of the shaded sub-cell and prolonging the battery life.

[0147] Similarly, please refer to FIG. 8B, the thin-film battery 20 with the series-parallel-series structure can also be provided with the edge cleaning area.

[0148] In a specific embodiment, each group of sub-cells includes 3 sub-cells in series, every 4 groups of sub-cells are connected in parallel to form a battery module, and n battery modules are connected in series, thereby achieving a relatively optimal battery efficiency. N is a positive integer.

[0149] In some embodiments, please refer to (a) in FIG. 8A, the first horizontal scribe groove and the third horizontal scribe groove as a separation between the adjacent two battery modules also extend to one of the edges of the thin-film battery along the first direction (and are the same edge); the two consecutive first horizontal scribe grooves as a separation respectively extend to different edges of the thin-film battery along the first direction, and the two consecutive third horizontal scribe grooves as a separation respectively extend to different edges of the thin-film battery along the first direction.

[0150] That is, please see (a) in FIG. 8A, the first first horizontal scribe slot in the first scribe slot module 2 also extends to the rightmost side, thereby avoiding the bottom electrodes of the 1st battery module and the 3rd battery module from being connected in parallel; the first first horizontal scribe slot in the first scribe slot module 2 also extends to the leftmost side, thereby avoiding the bottom electrodes of the 2nd battery module and the 4th battery module (not shown) from being connected in parallel.

[0151] Please see (c) in FIG. 8A, the third horizontal scribe slot at the end of the third scribe slot module 1 also extends to the rightmost side, thereby avoiding the top electrodes of the 1st battery module and the 3rd battery module from being connected in parallel; the third horizontal scribe slot at the end of the third scribe slot module 2 also extends to the leftmost side, thereby avoiding the top electrodes of the 2nd battery module and the 4th battery module (not shown) from being connected in parallel.

[0152] In some embodiments, please see FIG. 5, for the thin-film battery 20 with only 1 first scribe slot module / 1 first scribe slot module / 1 first scribe slot module (i.e., series-parallel structure), the positive and negative output terminals are respectively led out through the bus bars on both sides of the third scribe slot group along the first direction.

[0153] In some embodiments, please see FIG. 9, for the thin-film battery 20 with multiple first scribe slot modules / multiple first scribe slot modules / multiple first scribe slot modules (i.e., series-parallel-series structure), the positive and negative output terminals are respectively led out through the bus bars on both sides of the third scribe slot group along the second direction. That is, the negative output terminal N- is led out on the upper side, and the positive output terminal P- is led out on the lower side.

[0154] In summary, the sub-batteries in the current thin-film battery are all in full series structure, and when one of the sub-batteries is shaded, the shaded sub-battery is subjected to high reverse bias and is easy to be damaged; the parallel structure must be realized through external wiring or external devices between multiple thin-film batteries. The embodiments of the present disclosure provide a thin-film battery 20, which realizes series-parallel structure by reserving bottom electrodes and top electrodes on both sides of the sub-batteries, and also realizes series-parallel-series structure by forming scribe slots of the next series-parallel region after mirror flipping of the scribe slots of the series-parallel region, so that the sub-batteries of the thin-film battery can realize flexible connection mode at the process level to adapt to more application scenario requirements; on the other hand, while reserving the P2 and P3 etching lines at the bottom electrode charge collection position, one more P3 (i.e., P3a' in FIG. 6A) is added, so that the groups are separated (not connected in series), and the series resistance is also reduced, and the output efficiency of the battery is improved. On the other hand, by introducing the parallel structure, the overall voltage V MPPThe reduction, so when one of the sub-cells is shaded, the shaded sub-cell is subjected to a reduced reverse bias, and the breakdown of the shaded sub-cell is avoided by the sub-cell group in which the shaded sub-cell is located and all the sub-cell groups connected in parallel with it, which can prolong the service life of the battery.

[0155] In another embodiment of the present disclosure, referring to FIG. 10, a flowchart of a method for preparing a thin-film battery 20 is shown. As shown in FIG. 10, the method comprises:

[0156] S41: providing a substrate.

[0157] S42: forming a bottom electrode layer on the substrate, and cutting the bottom electrode layer to form a plurality of first scribe groove groups arranged along a second direction, and the first scribe groove groups reserve the bottom electrode layer on at least one side along a first direction.

[0158] Here, the first direction and the second direction intersect, for example, the first direction and the second direction are perpendicular.

[0159] It should be noted that the bottom electrode layer can be, but is not limited to, one of the following materials: indium tin oxide (ITO), lanthanide metal-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO).

[0160] S43: forming a semiconductor layer on the bottom electrode layer, and cutting at least part of the semiconductor layer to form a second scribe groove group arranged along the second direction, and the second scribe groove group removes the cut semiconductor layer on both sides along the first direction.

[0161] S44: forming a top electrode layer on the semiconductor layer, and cutting the top electrode layer to form a plurality of third scribe groove groups arranged along the second direction, and the third scribe groove groups reserve the top electrode layer on at least one side along the first direction.

[0162] In some embodiments, the top electrode layer can be, but is not limited to, one of the following materials: Au, Ag, Cu, Al, Ni, Cr, Bi, Pt, Mg, Mo, W, and alloys thereof, graphite, graphene, carbon nanotubes, indium tin oxide (ITO), lanthanide metal-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO).

[0163] It should be noted that the first scribe groove group, the second scribe groove group and the third scribe groove group are used to isolate a group of sub-cells arranged along the second direction; in each group of sub-cells, the last sub-cell is electrically connected with the bottom electrode layer reserved on the second side of the first scribe groove group, the first sub-cell is electrically connected with the top electrode layer reserved on the first side of the third scribe groove group, and the first side and the second side are opposite along the first direction; the remaining sub-cells are electrically isolated from the bottom electrode layer reserved around the first scribe groove group and the top electrode layer reserved around the third scribe groove group; the first direction, the second direction and the third direction intersect with each other.

[0164] In some embodiments, the semiconductor layer comprises, in sequence, a blocking layer, an electron transport layer, a light absorption layer, and a hole transport layer. Specifically, in the case of a reverse structure of the thin-film battery 20, the step S43 specifically comprises:

[0165] forming, in sequence, a hole transport layer, a light absorption layer, an electron transport layer and a blocking layer on the bottom electrode layer; cutting the hole transport layer, the light absorption layer, the electron transport layer and the blocking layer to form a second scribe groove group arranged along the second direction; and removing the hole transport layer, the light absorption layer, the electron transport layer and the blocking layer on both sides of the second scribe groove group along the first direction.

[0166] It should be noted that the thin-film battery 20 can be a thin-film battery 20 of any material, such as a perovskite photovoltaic cell (both formal structure and reverse structure), an amorphous silicon photovoltaic cell or a cadmium telluride photovoltaic cell, etc., i.e., the light absorption layer 222 is at least allowed to be a perovskite material, such as a perovskite type metal halide, whose chemical formula includes ABX3 or A2CDX6. A represents a monovalent inorganic cation, an organic cation or an organic-inorganic hybrid cation, B represents a divalent inorganic cation, an organic cation or an organic-inorganic hybrid cation, C represents a monovalent inorganic cation, an organic cation or an organic-inorganic hybrid cation, D represents a trivalent inorganic cation, an organic cation or an organic-inorganic hybrid cation, and X represents a monovalent inorganic anion, an organic anion or an organic-inorganic hybrid anion. A represents a monovalent inorganic cation, which optionally includes one or more of lithium ion (Li + ), sodium ion (Na + ), potassium ion (K + ), rubidium ion (Rb + ) and cesium ion (Cs + ); A represents an organic cation, which includes (NR1R2R3R4) + , (R1R2N=CR3R4) + , (R1R2N-C(R5)=NR3R4) + or (R1R2N-C(NR5R6)=NR3R4) +one or more of H, substituted or unsubstituted C1 to C20 alkyl, or substituted or unsubstituted aryl; optionally, A comprises at least one of a methylamine cation, a dimethylamine cation, an ethylamine cation, a propylamine cation, a butylamine cation, a pentylamine cation, a hexylamine cation, a formamidinium cation, and an imidazolium cation, more optionally, A comprises an organic amine cation and Cs + one or more of H, substituted or unsubstituted C1 to C20 alkyl, or substituted or unsubstituted aryl; optionally, A comprises at least one of a methylamine cation, a dimethylamine cation, an ethylamine cation, a propylamine cation, a butylamine cation, a pentylamine cation, a hexylamine cation, a formamidinium cation, and an imidazolium cation, more optionally, A comprises an organic amine cation and Cs + , silver ion (Ag + ), K + , and ruthenium ion (Ru + ). D represents a trivalent metal cation, optionally, D comprises one or more of bismuth ion (Bi 3+ ), trivalent nickel ion (Ni 3+ ), trivalent iron ion (Fe 3+ ), trivalent antimony ion (Sb 3+ ), trivalent indium ion (In 3+ ), more optionally, D comprises one or more of In 3+ , Bi 3+ , and Sb 3+ . X represents a halide ion or a halide-like ion, optionally, X comprises one or more of fluoride ion (F - ), chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ), thiocyanate ion (SCN - ), formate ion (HCOO - ), (CH3COO - ), trifluoroacetate ion (CF3COO - ), methanesulfonate ion (CH3SO3 - ), trifluoromethanesulfonate ion (CF3SO3 - ), cyanide ion (CN - ), more optionally, X comprises one or more of Cl - , Br - , and I - .

[0167] In some embodiments, the components of the hole transport layer can be, but are not limited to, one or more of the following: 2,2',7,7'-tetra(N,N-p-methoxyphenylamine)-9,9'- spirobifluorene, methoxytriphenylamine-fluoromethylformamide, poly[bis(4-phenyl)(2,4,6- trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene):polystyrene sulfonic acid, poly 3- hexylthiophene, triptycene-core triphenylamine, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-aniline)carbazole-spirobifluorene, polythiophene, phosphonic monomer and its polymer, carbazyl monomer and its polymer, sulfonic monomer and its polymer, triphenylamine monomer and its polymer, aromatic monomer and its polymer, metal oxide, CuI, CuSCN, wherein the metal element in the metal oxide can include one or more of Ni, Mo, W and Cu, such as nickel oxide (NiO x ) and metal-doped nickel oxide (lithium-doped nickel oxide, magnesium-doped nickel oxide, copper-doped nickel oxide, tin-doped nickel oxide, zinc-doped nickel oxide, strontium-doped nickel oxide, cobalt-doped nickel oxide, etc.), copper oxide, WO3. Further, the thickness of the hole transport layer can be 1 nm to 100 nm, and can be 1 nm, 10 nm, 30 nm, 50 nm, 60 nm, 70 nm, 100 nm, or a numerical range formed by two of the above values.

[0168] In some embodiments, the components of the electron transport layer can be, but are not limited to, one or more of the following: imide compounds, quinone compounds, fullerene and its derivatives, metal oxides, semiconductor material oxides, titanate and its derivatives, and materials obtained by doping or passivation thereof. Illustratively, the imide compounds include at least one of phthalimide, succinimide, N-bromosuccinimide, glutarimide, or maleimide. Illustratively, the quinone compounds include at least one of benzoquinone, naphthoquinone, phenanthraquinone, or anthraquinone. Illustratively, the fullerene and its derivatives include fullerene C 60 , fullerene C 70 , PCBM ([6,6]-phenyl-C 61 butyric acid methyl ester), [6,6]-phenyl-C 71 butyric acid methyl ester (PC 71The metal element in the metal oxide includes at least one of Mg, Cd, Zn, In, Pb, W, Sb, Bi, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga and Cr, and the metal oxide includes at least one of tin oxide (Sn02) and zinc oxide (ZnO) optionally. The semiconductor material oxide includes silicon oxide optionally. The titanate includes at least one of strontium titanate and calcium titanate. The thickness of the electron transport layer can be 5 nm to 100 nm, and can be 5 nm, 10 nm, 30 nm, 50 nm, 60 nm, 70 nm, 80 nm, 100 nm or a range defined by any two of the above values.

[0169] In some embodiments, the blocking layer can include one or more of the following, but is not limited to: 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), Sn02, and the thickness is generally 7 nm to 50 nm.

[0170] In a specific embodiment, the bottom electrode of each sub-cell, except the last sub-cell in each group, is electrically connected to the top electrode of the adjacent next sub-cell, so that the sub-cells in the same group are in series connection; the bottom electrode of the last sub-cell in each group is electrically isolated from the top electrode of the first sub-cell in the adjacent group, and the bottom electrodes of the last sub-cells in all groups are electrically connected, and the top electrodes of the first sub-cells in all groups are electrically connected, so that the sub-cells in different groups are in parallel connection.

[0171] In this way, on the one hand, the embodiment can directly form the series-parallel structure of the sub-cells at the process level by adjusting the scribe groove pattern, thereby allowing flexible process-level circuit design, without the need for auxiliary wires / parallel devices at the component level to achieve the series-parallel structure, which not only improves the design flexibility of the thin-film battery but also simplifies the process and reduces the cost, and the circuit area is relatively small; on the other hand, since the thin-film battery is not a full series structure but a series-parallel structure, the overall voltage of the thin-film battery is relatively small, and when a single sub-cell is shaded, the reverse bias (equivalent to the overall voltage) it receives is also relatively small, the reverse bias received by the shaded sub-cell is reduced, and it is borne by the sub-cell group in which the shaded sub-cell is located and all the sub-cell groups in parallel with it, avoiding breakdown of the shaded sub-cell, which can prolong the battery life.

[0172] Series-parallel structure:

[0173] Please refer to FIG. 11, in some embodiments, the first side and the second side of the first scribe groove group both reserve the bottom electrode layer, and the first side and the second side of the third scribe groove group both reserve the top electrode layer; the first side and the second side are opposite along the first direction; in each group of sub-cells, the last sub-cell is electrically connected with the bottom electrode layer reserved by the second side and is isolated from the bottom electrode layer reserved by the first side, and the first sub-cell is electrically isolated from the top electrode layer reserved by the second side and is electrically connected with the top electrode layer reserved by the first side; the rest of the sub-cells are each electrically isolated from the bottom electrode layer reserved by the first side and the second side, and the rest of the sub-cells are each electrically isolated from the top electrode layer reserved by the first side and the second side.

[0174] Please refer to FIG. 11, each first scribe groove group includes a plurality of first horizontal scribe grooves P1a, a first vertical long scribe groove P1b and a first vertical short scribe groove P1c; each second scribe groove group includes a plurality of second horizontal scribe grooves P2a, two second vertical scribe grooves P2b; each third scribe groove group includes a plurality of third horizontal scribe grooves P3a, a third vertical long scribe groove P3b and a third vertical short scribe groove P3. The horizontal scribe grooves all extend along the first direction and are arranged in parallel along the second direction, each first horizontal scribe groove P1a has a second horizontal scribe groove P2a on one side along the second direction; each second horizontal scribe groove P2a has a third horizontal scribe groove P3a on one side away from the closest first horizontal scribe groove P1a along the second direction. The vertical scribe grooves, the vertical long scribe grooves and the vertical short scribe grooves all extend along the second direction.

[0175] Each first scribe groove group includes a plurality of first horizontal scribe grooves P1a, a first vertical long scribe groove P1b and a first vertical short scribe groove P1c; each second scribe groove group includes a plurality of second horizontal scribe grooves P2a, two second vertical scribe grooves P2b; each third scribe groove group includes a plurality of third horizontal scribe grooves P3a, a third vertical long scribe groove P3b and a third vertical short scribe groove P3.

[0176] The first vertical long scribe grooves P1b in all first scribe groove groups are connected at the head and tail to form a first overall scribe groove, and the first overall scribe groove has intersection points with each first horizontal scribe groove P1a; the first vertical short scribe grooves P1c have intersection points with each first horizontal scribe groove in the first scribe groove group to which the first vertical short scribe grooves P1c belong, and the first vertical short scribe grooves P1c in adjacent first scribe groove groups are isolated from each other.

[0177] One second vertical scribe groove P2b in all second scribe groove groups is connected at the head and tail to form a second overall scribe groove, and another second vertical scribe groove P2b in all second scribe groove groups is connected at the head and tail to form a third overall scribe groove, and the second overall scribe groove and the third overall scribe groove both have intersection points with each second horizontal scribe groove P2a;

[0178] All the third vertical long dash-dot grooves P3b are connected end to end to form a fourth integral dash-dot groove, the fourth integral dash-dot groove has intersection points with each of the third horizontal dash-dot grooves P3a, the third vertical short dash-dot groove P3c has intersection points with each of the third horizontal dash-dot grooves P3a in the third dash-dot groove group to which the third vertical short dash-dot groove P3c belongs, and the third vertical short dash-dot grooves P3c in adjacent third dash-dot groove groups are isolated from each other.

[0179] It should be noted that the first integral dash-dot groove, the second integral dash-dot groove, and the third vertical short dash-dot groove are all close to the same edge of the thin-film battery along the first direction; the first vertical short dash-dot groove, the third integral dash-dot groove, and the fourth integral dash-dot groove are all close to the other edge of the thin-film battery along the first direction; optionally, the first horizontal dash-dot groove, the second horizontal dash-dot groove, and the third horizontal dash-dot groove are all not in contact with both edges of the thin-film battery along the first direction.

[0180] In some embodiments, for the second horizontal dash-dot groove P2a between the two adjacent groups of sub-cells, a third additional horizontal dash-dot groove exists on the upper side of the second horizontal dash-dot groove P2a along the second direction, and the third additional horizontal dash-dot groove extends from the third vertical short dash-dot groove P3c to the third vertical long dash-dot groove P3b along the first direction; or the semiconductor layers between the two adjacent groups of sub-cells are in contact, for example, the second horizontal dash-dot groove P2a between the two adjacent groups of sub-cells is not engraved. It should be understood that the scribe groove pattern of FIG. 11 does not show this part due to various implementation means, but can be understood in combination with FIG. 6A or FIG. 7A.

[0181] In some embodiments, the first horizontal dash-dot groove P1a, the second horizontal dash-dot groove P2a, and the third horizontal dash-dot groove P3a closest to the upper edge of the thin-film battery along the second direction also respectively extend to both edges of the thin-film battery along the first direction; the first horizontal dash-dot groove P1a, the second horizontal dash-dot groove P2a, and the third horizontal dash-dot groove P3a closest to the lower edge of the thin-film battery along the second direction also respectively extend to both edges of the thin-film battery along the first direction.

[0182] In some embodiments, the first scribe groove groups form first scribe groove modules, the second scribe groove groups form second scribe groove modules, and the third scribe groove groups form third scribe groove modules; the first scribe groove modules are arranged along the second direction, the first integral scribe groove in a first scribe groove module and the first vertical short scribe groove in a first scribe groove module adjacent to the fourth side are on the same side along the second direction and are isolated from each other, and the first integral scribe groove in the first scribe groove module and the first vertical short scribe groove in a first scribe groove module adjacent to the third side are on the same side along the second direction and are connected to each other; the second scribe groove modules are arranged along the second direction, all the second integral scribe grooves are connected to form an integral whole, and all the third integral scribe grooves are connected to form an integral whole; the third scribe groove modules are arranged along the second direction, the fourth integral scribe groove in a third scribe groove module and the third vertical short scribe groove in a third scribe groove module adjacent to the fourth side are on the same side along the second direction and are isolated from each other; and the fourth integral scribe groove in the third scribe groove module and the third vertical short scribe groove in a third scribe groove module adjacent to the third side are on the same side along the second direction and are isolated from each other; the third side and the fourth side are opposite along the second direction; wherein the corresponding sub-cells of a first scribe groove module, a second scribe groove module, and a third scribe groove module form a battery module, and the battery modules form a series connection relationship.

[0183] In this way, on the one hand, the embodiment can directly form a series-parallel structure of sub-cells at the process level by adjusting the scribe groove pattern, thereby allowing flexible process-level circuit design, without the need for auxiliary wires / parallel devices at the component level to achieve the series-parallel structure, which not only improves the design flexibility of the thin-film battery but also simplifies the process and reduces costs, and the circuit area is relatively small; on the other hand, since the thin-film battery is not a full series structure but a series-parallel structure, the overall voltage of the thin-film battery is relatively small, and when a single sub-cell is shaded, the reverse bias (equivalent to the overall voltage) it receives is also relatively small, the reverse bias received by the shaded sub-cell is reduced, and it is borne by the sub-cell group in which the shaded sub-cell is located and all the sub-cell groups connected in parallel with it, avoiding breakdown of the shaded sub-cell, which can prolong the service life of the battery.

[0184] Series-parallel structure:

[0185] In some embodiments, referring to FIGS. 12A and 12C, the first horizontal scribe groove and the third horizontal scribe groove serving as a partition between two adjacent battery modules also extend to one of the edges of the thin-film battery along the first direction; the two consecutive first horizontal scribe grooves each extend to a different edge of the thin-film battery along the first direction; and the two consecutive third horizontal scribe grooves each extend to a different edge of the thin-film battery along the first direction.

[0186] Specifically, referring to FIG. 12, the preparation method of the thin-film battery with the series-parallel-series structure is as follows:

[0187] Step 1, as shown in (1) of FIG. 12A, a substrate with a bottom electrode layer is provided; as shown in (2) of FIG. 12A, the bottom electrode layer is etched according to the etching pattern of the first group of scribe grooves by laser scribing P1 to generate a plurality of first horizontal scribe grooves P1a, a plurality of first vertical long scribe grooves P1b and a plurality of first vertical short scribe grooves P1c. The plurality of first horizontal scribe grooves P1a divide the substrate into a plurality of sub-batteries, and the first vertical long scribe grooves P1b and the first vertical short scribe grooves P1c separate the bottom electrode at the edge, so that adjacent sub-batteries are connected in series, and the bottom electrode of every three sub-batteries is at the same potential, which is used as the bottom electrode for subsequent parallel connection; the bottom electrodes of every three groups of sub-batteries are isolated to form a series-parallel-series structure.

[0188] Step 2, preparation of each layer (i.e. the semiconductor layer) of the perovskite assembly: a hole transport layer is formed on the bottom electrode layer, a perovskite layer (i.e. the light-absorbing layer) is formed on the hole transport layer, an electron transport layer is formed on the perovskite layer, and a blocking layer is formed on the electron transport layer; as shown in (3) of FIG. 12A.

[0189] Step 3, as shown in (4) of FIG. 12B, the semiconductor layer is etched according to the pattern of the second group of scribe grooves by laser to generate a plurality of second horizontal scribe grooves P2a and a plurality of second vertical scribe grooves P2b; the second horizontal scribe grooves P2a are etched on the upper side of the first horizontal scribe grooves P1a to cut off the blocking layer, the electron transport layer, the perovskite layer and the hole transport layer, thereby dividing the entire thin film into a plurality of sub-batteries; the remaining bottom electrodes on both sides are not etched, and the perovskite layer and the electron transport layer are removed, and the edge cleaning width is 1-10 mm, as shown in (5) of FIG. 12B.

[0190] Step 4, as shown in (6) of FIG. 12B, a top electrode layer is deposited on the blocking layer;

[0191] Step 5, as shown in (7) of FIG. 12C, the top electrode layer is etched according to the pattern of the third group of scribe grooves to generate a plurality of third horizontal scribe grooves P3a, a plurality of third vertical long scribe grooves P3b and a plurality of third vertical short scribe grooves P3c, and a third additional horizontal scribe groove P3a' is etched above the P2a at the group series connection; the top electrodes on both sides are reserved, the top electrodes of every three sub-batteries are at the same potential, and the top electrode, the blocking layer, the electron transport layer, the perovskite layer and the hole transport layer are etched to form a series-parallel structure of a plurality of sub-batteries; the bottom electrodes of every three groups of sub-batteries are isolated to form a series-parallel-series structure.

[0192] Step 6, as shown in (8) of FIG. 12C, the positive and negative electrodes of the thin-film battery are led out by the current lead.

[0193] It should be understood that, for Figure 12B, for each second horizontal scribe line P2a located between two adjacent sub-cells, there is a third additional horizontal scribe line P3a' on the side closest to the first horizontal scribe line P1a along the second direction; or, the semiconductor layers between two adjacent sub-cells are in contact (e.g., by not scribing the second horizontal scribe line P2a between two adjacent sub-cells). Due to the variety of implementation methods, this part is not shown in the scribe line pattern of Figure 12B, but it can be understood in conjunction with Figure 6A or Figure 7A.

[0194] Specifically, please refer to Figures 12A to 12C. The fabrication process of the aforementioned series-parallel structure thin-film battery is the same as that of the series-parallel-series structure, except that the specific etching patterns of P1, P2, and P3 are different. Please understand them accordingly.

[0195] In summary, the present disclosure provides a method for fabricating a thin-film battery 20. By reserving bottom electrodes and top electrodes on both sides of the sub-cell to achieve a series-parallel structure, and by flipping the mirror surface of the scribing grooves in the series-parallel region to form the scribing grooves in the next series-parallel region, a series-parallel-series structure is also achieved. Thus, the sub-cells of the thin-film battery can achieve flexible connection methods at the process level to adapt to more application scenarios. Moreover, it can avoid the breakdown of the shielded sub-cells and extend the battery life.

[0196] In another embodiment of this disclosure, a stacked battery is provided, comprising the aforementioned thin-film battery 20 and a photoelectric conversion layer. The first semiconductor layer in the thin-film battery 20 includes at least a light-absorbing layer, and the photoelectric conversion layer is located along a third direction on one side of the light-absorbing layer; wherein the photoelectric conversion layer and the light-absorbing layer have different band gaps. Thus, by providing light-absorbing layers and photoelectric conversion layers with different band gaps, the stacked battery can effectively absorb light of different wavelengths, broadening the spectral range of absorbed light and improving the photoelectric conversion efficiency of the stacked battery.

[0197] The term "band gap" typically refers to the energy difference (in electron volts) between the top of the valence band and the bottom of the conduction band of a material.

[0198] In a stacked solar cell, the top cell / light-absorbing region has the highest bandgap when viewed from the direction of light incidence, while the bandgap of the lower cell / light-absorbing region decreases towards the bottom of the device. This arrangement maximizes photon energy extraction because the top cell / photosensitive region absorbs the highest-energy photons while allowing the transmission of lower-energy photons. Each subsequent cell / photoactive region then extracts energy from photons closest to its bandgap, thereby minimizing thermal losses.

[0199] In some embodiments, the stacked battery is a mechanically stacked battery. A mechanically stacked battery refers to battery sections stacked along a third direction and connected in parallel without current matching. They are isolated by a transparent insulating material, and the charge carriers between them are not directly connected. Each battery section in a mechanically stacked battery has its own independent positive and negative electrodes to draw out current, allowing for flexible current adjustment. The number of battery sections stacked in a mechanically stacked battery is no less than two, and can be two, three, four, five, etc. The following example uses a mechanically stacked battery with two battery sections.

[0200] In some embodiments, the thin-film battery 20 constitutes the first battery section of a mechanically stacked battery, and the battery including the photoelectric conversion layer constitutes the second battery section of the mechanically stacked battery, with the two physically isolated by an insulating layer. Specifically, the second battery section includes at least a third electrode layer, a photoelectric conversion layer, and a fourth electrode layer stacked sequentially along a third direction. The third and fourth electrode layers are used to discharge electrons or holes generated by the photoelectric conversion layer. The first and second battery sections are electrically isolated by an insulating layer, with each battery section having two electrode layers, for a total of four electrode layers. The circuits of the two battery sections are independent of each other.

[0201] In some embodiments, the material of the photoelectric conversion layer can be one or more of the following: perovskite materials, crystalline silicon, polycrystalline silicon, amorphous silicon, cadmium telluride, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, or copper indium selenide, organic donor-acceptor materials, etc. These photoelectric conversion layer materials can absorb photons and be excited by photons to generate electron-hole pairs, which can then be extracted and transmitted to an external circuit. It is understood that the definition of perovskite material here is the same as the perovskite material types mentioned above, but the specific composition differs to obtain photoelectric conversion layers with different band gaps. These layers are used to absorb light of different wavelengths, broadening the absorption spectrum range of the tandem solar cell and improving its photoelectric conversion efficiency.

[0202] In some embodiments, the band gap of the photoelectric conversion layer is larger than that of the light-absorbing layer. For example, the band gap of the light-absorbing layer is 1.2 eV to 1.5 eV, and the band gap of the photoelectric conversion layer is 1.55 eV to 2.2 eV. The band gap settings of the light-absorbing layer and the photoelectric conversion layer can effectively absorb short-wavelength and long-wavelength light, respectively, thereby improving the photoelectric conversion efficiency of the tandem solar cell. For example, the photoelectric conversion layer includes a wide-bandgap perovskite material, such as APbI₂. y Br 3-y The materials shown, wherein A is defined as above, 1≤y<3, and the light-absorbing layer comprises a narrow bandgap perovskite material, such as ASn x Pb 1-x The material shown in X3, where A and X are defined as above, and 0.5≤x≤1, yields a perovskite-perovskite mechanical tandem solar cell.

[0203] In other embodiments, the band gap of the photoelectric conversion layer is smaller than that of the light-absorbing layer. For example, the band gap of the photoelectric conversion layer is 1.2 eV to 1.5 eV, and the band gap of the light-absorbing layer is 1.55 eV to 2.2 eV. The band gap configuration of the light-absorbing layer and the photoelectric conversion layer can effectively absorb long-wavelength and short-wavelength light, respectively, improving the photoelectric conversion efficiency of the tandem solar cell. For example, the light-absorbing layer includes a wide-bandgap perovskite material, such as APbI₂. y Br 3-y The materials shown, where A is defined as above, 1 ≤ y < 3, and the photoelectric conversion layer includes a narrow bandgap perovskite material, such as ASn. x Pb 1-x The material shown in X3, where A and X are defined as described above, and 0.5 ≤ x ≤ 1, results in a perovskite-perovskite mechanical tandem solar cell. In another example, the light-absorbing layer comprises a wide-bandgap perovskite material, and the photoelectric conversion layer comprises a crystalline silicon material, resulting in a perovskite-perovskite mechanical tandem solar cell. Without limitation, the photoelectric conversion layer and light-absorbing layer materials can also be other materials, such as organic photovoltaic materials, copper indium gallium selenide (CIGS), etc.

[0204] Furthermore, in the case where the second battery unit containing the photoelectric conversion layer is a thin-film solar cell, a thin-film material can be prepared. This thin-film battery can also adopt the structure of thin-film battery 20 to form a series-parallel structure or a series-parallel-series structure to alleviate problems such as hot spots or shading. The specific structure will not be described in detail here.

[0205] Understandably, thin-film solar cells are a type of solar cell that uses thin-film materials to convert solar energy into electrical energy. Their thickness is generally between a few micrometers and several hundred micrometers. Such thin-film materials include one or more of the following: perovskite materials, cadmium telluride, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide or copper indium selenide, amorphous silicon, and organic donor-acceptor materials.

[0206] Specifically, the mechanically stacked solar cell includes a substrate, a bottom electrode layer, an optional first transport layer, a light-absorbing layer, an optional second transport layer, a top electrode layer, an insulating layer, a third electrode layer, an optional third transport layer, a photoelectric conversion layer, an optional fourth transport layer, and a fourth electrode layer, all stacked together. The first and second transport layers have different carrier transport properties and are selected from either an electron transport layer or a hole transport layer, respectively. The third and fourth transport layers also have different carrier transport properties and are selected from either an electron transport layer or a hole transport layer, respectively.

[0207] Furthermore, since the top electrode layer and the third electrode layer are located in the middle of the mechanically stacked battery, in order to further increase the light energy utilization rate of the mechanically stacked battery and allow the remaining light after absorption by one battery section to enter the next battery section, the top electrode layer and the third electrode layer can be made of light-transmitting electrode materials, such as one or more of indium tin oxide (ITO), lanthanide-doped indium oxide, fluorine-doped tin oxide (FTO), antimony-doped tin oxide, boron-doped zinc oxide (BZO), zinc aluminum oxide (AZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), and indium tungsten oxide (IWO). In some embodiments, the insulating layer material includes, but is not limited to, glass or an insulating adhesive. Further, the glass is transparent glass; further, the insulating adhesive is a transparent adhesive.

[0208] In other embodiments, the tandem battery is a monolithic integrated tandem battery, which refers to battery sections stacked along a third direction that are connected in series between a pair of electrode layers. The two battery sections are connected through a composite layer or tunnel junction to achieve current matching between adjacent battery sections. Monolithic integrated tandem batteries are relatively smaller in size compared to mechanically stacked batteries. The number of battery sections stacked in a monolithic integrated tandem battery is no less than two, and can be two, three, four, five, etc. The following example uses a monolithic integrated tandem battery with two battery sections.

[0209] In some embodiments, a monolithic integrated tandem solar cell includes a substrate, a bottom electrode layer, a light-absorbing layer, a recombination / tunneling layer, a photoelectric conversion layer, and a top electrode layer stacked along a third direction. The recombination layer is used to recombine and annihilate holes generated from the light-absorbing layer and electrons generated from the photoelectric conversion layer, or electrons generated from the light-absorbing layer and holes generated from the photoelectric conversion layer, transporting towards the recombination layer. This achieves low-ohmic tunnel recombination between the first cell containing the light-absorbing layer and the second cell containing the photoelectric conversion layer, reducing charge accumulation and thus achieving electrical or optical connection between the cell sections. This allows charge carriers to transport and recombine between the cell sections, thereby improving the overall efficiency of the monolithic integrated tandem solar cell. The tunneling layer is located between the two cell sections of the tandem solar cell and its main function is to achieve efficient transport of electrons and holes. Through the tunneling effect, the tunneling layer allows electrons and holes to be transported from the bottom cell to the top cell, thereby reducing energy loss due to electron thermal relaxation and improving the photoelectric conversion efficiency of the cell. In this structure, the recombination / tunneling layer and the photoelectric conversion layer, similar to the light-absorbing layer, are film layers stacked within the semiconductor layer.

[0210] In some embodiments, a first scribing groove group is used to scribe the bottom electrode layer along a third direction, and the bottom electrode layer is retained on at least one side of the first scribing groove group along the first direction; a second scribing groove group is used to scribe the semiconductor layer (including at least a composite layer / tunneling layer, a photoelectric conversion layer and a light-absorbing layer) along a third direction, and at least a portion of the semiconductor layer is removed from both sides of the second scribing groove group along the first direction; a third scribing groove group is used to scribe the top electrode layer along a third direction, and the top electrode layer is retained on at least one side of the third scribing groove group along the first direction. Thus, a first scriber group, a second scriber group, and a third scriber group are used to isolate a group of sub-cells arranged along a second direction. In each group of sub-cells, the last sub-cell is electrically connected to the bottom electrode layer retained on the second side of the first scriber group, and the first sub-cell is electrically connected to the top electrode layer retained on the first side of the third scriber group. The first and second sides are opposite each other along the first direction, and the remaining sub-cells are electrically isolated from the bottom electrode layer retained around the first scriber group and the top electrode layer retained around the third scriber group, thereby realizing the series-parallel structure of a monolithic integrated stacked cell. Furthermore, the series-parallel-series structure of a monolithic integrated stacked cell can be implemented with reference to the series-parallel-series structure of the thin-film battery 20, which will not be elaborated here.

[0211] In some embodiments, the band gap of the photoelectric conversion layer is smaller than that of the light-absorbing layer. For example, the band gap of the photoelectric conversion layer is 1.2 eV to 1.5 eV, and the band gap of the light-absorbing layer is 1.55 eV to 2.2 eV.

[0212] In other embodiments, a monolithic integrated tandem solar cell includes a substrate, a bottom electrode layer, a photoelectric conversion layer, a composite layer / tunneling layer, a light-absorbing layer, and a top electrode layer stacked along a third direction. The composite layer / tunneling layer functions as described above. In some embodiments, a monolithic integrated tandem solar cell includes a substrate, a bottom electrode layer, an optional third transport layer, a photoelectric conversion layer, an optional fourth transport layer, a composite layer / tunneling layer, an optional first transport layer, a light-absorbing layer, an optional second transport layer, and a top electrode layer stacked together. The first and second transport layers have different carrier transport properties and are selected from either an electron transport layer or a hole transport layer, respectively. The third and fourth transport layers also have different carrier transport properties and are selected from either an electron transport layer or a hole transport layer, respectively. Furthermore, the third transport layer and the first transport layer have the same carrier transport characteristics.

[0213] In some embodiments, the band gap of the photoelectric conversion layer is larger than the band gap of the light-absorbing layer. For example, the band gap of the light-absorbing layer is 1.2 eV to 1.5 eV, and the band gap of the photoelectric conversion layer is 1.55 eV to 2.2 eV.

[0214] In some embodiments, the photoelectric conversion layer includes, but is not limited to, the following photoelectric conversion materials: perovskite materials, cadmium telluride, copper zinc tin sulfide, copper zinc tin selenide, copper zinc tin selenide sulfide, copper indium gallium selenide, copper indium gallium diselenide, or copper indium selenide. These materials can absorb light of different wavelengths with the light-absorbing layer, thereby broadening the spectral range of light absorption in multi-junction solar cells and improving their photoelectric conversion efficiency. In this disclosure, the definition of perovskite material is the same as the type of perovskite material defined for the light-absorbing layer, but the specific composition differs to obtain photoelectric conversion layers with different band gaps, used to absorb light of different wavelengths with the light-absorbing layer, broadening the absorption spectral range of monolithically integrated tandem solar cells, and improving the cell's photoelectric conversion efficiency.

[0215] In this disclosure, the definition and material selection of the corresponding hole transport layer or electron transport layer are as described above, and will not be repeated here.

[0216] For example, the composite layer comprises one or more of metallic materials, transparent conductive oxides, and carbon materials. Further, the transparent conductive oxide layer comprises, but is not limited to, one or more of FTO (fluorine-doped tin oxide), ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), IGZO (indium gallium zinc oxide), and ATO (antimony tin oxide). Further, the metallic materials include, but are not limited to, one or more of gold, copper, silver, platinum, aluminum, and iron. Further, the carbon materials include one or more of graphite, graphene, and carbon nanotubes.

[0217] In some embodiments, the thickness of the composite layer is 0.1 nm to 200 nm. For example, it can be 0.1 nm, 0.8 nm, 1 nm, 2 nm, 10 nm, 30 nm, 50 nm, 90 nm, 100 nm, 130 nm, 150 nm, 160 nm, 200 nm, or within the range of any two of the above point values ​​as end values.

[0218] In some embodiments, the components of the tunneling layer include, but are not limited to, PEDOT, transparent metal oxides, etc.

[0219] Understandably, other functional layers, such as passivation layers and barrier layers, can be introduced into the stacked battery as needed, and there are no restrictions here.

[0220] In another embodiment of this disclosure, please refer to FIG13, which shows a schematic diagram of a photovoltaic system 60 provided in an embodiment of this disclosure. As shown in FIG13, the photovoltaic system 60 includes at least the aforementioned thin-film battery 20, and the photovoltaic system 60 is used to convert light energy into electrical energy.

[0221] In another embodiment of this disclosure, please refer to FIG14, which shows a schematic diagram of an electrical device 70 provided in an embodiment of this disclosure. As shown in FIG14, the electrical device 70 includes at least the aforementioned thin-film battery 20. The thin-film battery 20 can be used as the power source of the electrical device or as the energy storage unit of the electrical device 70. The electrical device may include mobile devices (e.g., mobile phones, laptops, etc.), electric vehicles (e.g., pure electric vehicles, hybrid electric vehicles, plug-in hybrid electric vehicles, electric bicycles, electric scooters, electric golf carts, electric trucks, etc.), electric trains, ships and satellites, energy storage systems, etc., but is not limited thereto.

[0222] In another embodiment of this disclosure, please refer to FIG15, which shows a schematic diagram of a power generation device 80 provided in an embodiment of this disclosure. As shown in FIG15, the power generation device 80 includes at least the aforementioned thin-film battery 20. The thin-film battery 20 can be used as the core of the power generation device 80 for outputting electrical energy. The power generation device can be a photovoltaic power generation device, a solar energy device, etc.

[0223] It should be noted that this disclosure is not limited to the above-described embodiments. The above embodiments are merely examples, and any embodiments with the same technical substance and achieving the same effect are included within the technical scope of this disclosure. Furthermore, various modifications that can be conceived by those skilled in the art to the embodiments, and other ways of constructing embodiments by combining some of the constituent elements, are also included within the scope of this disclosure without departing from the spirit of this disclosure.

Claims

1. A thin-film battery, the thin-film battery comprising a substrate, a bottom electrode layer, a semiconductor layer and a top electrode layer stacked sequentially; The thin-film battery further includes a plurality of first scribing groove groups arranged along a second direction, the first scribing groove groups being used to scribe the bottom electrode layer along a third direction, and the bottom electrode layer being retained on at least one side of the first scribing groove groups along a first direction; the first direction, the second direction, and the third direction intersect each other; The thin-film battery further includes a plurality of second scribing groove groups arranged along a second direction, the second scribing groove groups being used to scribble the semiconductor layer along a third direction, and the second scribing groove groups removing at least a portion of the semiconductor layer along both sides of the first direction; The thin-film battery further includes a plurality of third scribing groove groups arranged along a second direction, the third scribing groove groups being used to scribe the top electrode layer along a third direction, and the top electrode layer being retained on at least one side of the third scribing groove groups along a first direction. in, A first scriber group, a second scriber group, and a third scriber group are used to isolate a group of sub-cells arranged along a second direction; in each group of sub-cells, the last sub-cell is electrically connected to the bottom electrode layer retained on the second side of the first scriber group, and the first sub-cell is electrically connected to the top electrode layer retained on the first side of the third scriber group, with the first side and the second side opposite each other along a first direction; the remaining sub-cells are electrically isolated from the bottom electrode layer retained around the first scriber group and the top electrode layer retained around the third scriber group.

2. The thin-film battery according to claim 1, wherein, Except for the last sub-cell in each group of sub-cells, the bottom electrode of the other sub-cells is electrically connected to the top electrode of the next adjacent sub-cell, so that multiple sub-cells in the same group of sub-cells are connected in series. The bottom electrode of the last sub-cell in each group is electrically isolated from the top electrode of the first sub-cell in the adjacent group, and the bottom electrodes of the last sub-cells in all groups are electrically connected, and the top electrodes of the first sub-cells in all groups are electrically connected, so that the sub-cells in different groups are connected in parallel.

3. The thin-film battery according to claim 1 or 2, wherein, The bottom electrode layer is retained on both the first and second sides of the first scribing groove group, and the top electrode layer is retained on both the first and second sides of the third scribing groove group. In each group of sub-cells, the last sub-cell is electrically connected to the bottom electrode layer retained on the second side and isolated from the bottom electrode layer retained on the first side; the first sub-cell is electrically isolated from the top electrode layer retained on the second side and electrically connected to the top electrode layer retained on the first side; the remaining sub-cells are each electrically isolated from the bottom electrode layers retained on the first and second sides, and the remaining sub-cells are each electrically isolated from the top electrode layers retained on the first and second sides.

4. The thin-film battery according to any one of claims 1-3, wherein, Each first scribing groove group includes a plurality of first horizontal scribing grooves, a first vertical long scribing groove, and a first vertical short scribing groove; each second scribing groove group includes a plurality of second horizontal scribing grooves and two second vertical scribing grooves; each third scribing groove group includes a plurality of third horizontal scribing grooves, third vertical long scribing grooves, and third vertical short scribing grooves. The first horizontal scribing grooves, the second horizontal scribing grooves, and the third horizontal scribing grooves all extend along a first direction and are arranged parallel to each other along a second direction. Each first horizontal scribing groove has a second horizontal scribing groove on one side along the second direction, and each second horizontal scribing groove has a third horizontal scribing groove on the side along the second direction away from the nearest first horizontal scribing groove. The second vertical scribing groove, the first vertical long scribing groove, the third vertical long scribing groove, the first vertical short scribing groove, and the third vertical short scribing groove all extend along the second direction. All the first vertical long scribing grooves are connected end to end to form a first integral scribing groove, and the first integral scribing groove has an intersection point with each of the first horizontal scribing grooves. The first vertical short scribbled groove has an intersection point with each first horizontal scribbled groove in the first scribbled groove group to which it belongs, and the first vertical short scribbled grooves in adjacent first scribbled groove groups are isolated from each other. One of the second vertical scribing grooves in all the second scribing groove groups is connected end to end to form a second integral scribing groove, and another of the second vertical scribing grooves in all the second scribing groove groups is connected end to end to form a third integral scribing groove. The second integral scribing groove and the third integral scribing groove each have an intersection point with each of the second horizontal scribing grooves. All the third vertical long scribing grooves are connected end to end to form a fourth integral scribing groove, and the fourth integral scribing groove has an intersection point with each of the third horizontal scribing grooves; the third vertical short scribing groove has an intersection point with each of the third horizontal scribing grooves in the third scribing groove group to which it belongs, and the third vertical short scribing grooves in adjacent third scribing groove groups are isolated from each other. The first integral scribing groove, the second integral scribing groove, and the third vertical short scribing groove are all close to the same edge of the thin-film battery along the first direction; the first vertical short scribing groove, the third integral scribing groove, and the fourth integral scribing groove are all close to the other edge of the thin-film battery along the first direction. The first horizontal scribed groove, the second horizontal scribed groove, and the third horizontal scribed groove do not contact either of the two edges of the thin-film battery along the first direction.

5. The thin-film battery according to claim 4, wherein, For the second horizontal scribing groove between two adjacent groups of sub-cells, there is a third additional horizontal scribing groove on the side closest to the first horizontal scribing groove along the second direction, and the third additional horizontal scribing groove extends from the third vertical short scribing groove to the third vertical long scribing groove along the first direction; the third additional horizontal scribing groove belongs to the third scribing groove group.

6. The thin-film battery according to claim 4, wherein, The semiconductor layers between two adjacent sets of sub-cells are in contact.

7. The thin-film battery according to any one of claims 4-6, wherein, A plurality of the first scribing groove groups form a first scribing groove module; a plurality of the second scribing groove groups form a second scribing groove module; and a plurality of the third scribing groove groups form a third scribing groove module. Multiple first scribing groove modules are arranged along the second direction. The first integral scribing groove in one of the first scribing groove modules and the first vertical short scribing groove in the first scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other. The first integral scribing groove in the first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the fourth side are located on the same side along the second direction and are connected to each other. Multiple second scribing groove modules are arranged along the second direction, all the second integral scribing grooves are connected to form a whole, and all the third integral scribing grooves are connected to form a whole; Multiple third scribing groove modules are arranged along the second direction. The fourth integral scribing groove in one of the third scribing groove modules and the third vertical short scribing groove in the third scribing groove module adjacent to the fourth side are located on the same side along the second direction and are isolated from each other. The fourth integral scribing groove in the third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other. The third side and the fourth side are opposite to each other along the second direction. Among them, the sub-batteries corresponding to the first scribing groove module, the second scribing groove module, and the third scribing groove module form a battery module, and different battery modules are connected in series.

8. The thin-film battery according to claim 7, wherein, The first horizontal scribe line groove and the third horizontal scribe line groove, which serve as a separator between two adjacent battery modules, also extend to one of the edges of the thin-film battery along the first direction; Two consecutive first horizontal scribed grooves, serving as separators, extend to different edges of the thin-film battery along the first direction, and two consecutive third horizontal scribed grooves, serving as separators, extend to different edges of the thin-film battery along the first direction.

9. The thin-film battery according to any one of claims 1-8, wherein, The thin-film battery shall satisfy at least one or more of the conditions (1) to (3): (1) The semiconductor layer includes a light-absorbing layer; (2) The semiconductor layer includes a light-absorbing layer, which includes a perovskite material; (3) The semiconductor layer includes a first transport layer, a light-absorbing layer and a second transport layer stacked in sequence, wherein the first transport layer is either a hole transport layer or an electron transport layer, and the second transport layer is either a hole transport layer or an electron transport layer.

10. The thin-film battery according to any one of claims 4-6, wherein, The thin-film battery satisfies one or more of the conditions (1) to (3): (1) In the second direction, the distance between the first horizontal scribing groove and the nearest second horizontal scribing groove is 1 to 50 micrometers; (2) The distance between the second horizontal scribing groove and the nearest third horizontal scribing groove is 1 to 50 micrometers; (3) The distance between the edge of the thin-film battery along the second direction and the nearest first horizontal scribed groove is 1 to 10 mm.

11. A method for preparing a thin-film battery, the method comprising: Provide substrate; A bottom electrode layer is formed on the substrate, and the bottom electrode layer is cut to form a plurality of first scribing groove groups arranged along a second direction, wherein the bottom electrode layer is retained on at least one side of the first scribing groove group along the first direction; the first direction and the second direction intersect. A semiconductor layer is formed on the bottom electrode layer, and the semiconductor layer is cut to form a second scribing groove group arranged along the second direction, and at least a portion of the semiconductor layer is removed from both sides of the second scribing groove group along the first direction. A top electrode layer is formed on the semiconductor layer, and the top electrode layer is cut to form a plurality of third scribing groove groups arranged along the second direction, wherein the top electrode layer is retained on at least one side of the third scribing groove group along the first direction. The first, second, and third scribed groove groups are used to isolate a group of sub-cells arranged along a second direction. In each group of sub-cells, the last sub-cell is electrically connected to the bottom electrode layer retained on the second side of the first scribed groove group, and the first sub-cell is electrically connected to the top electrode layer retained on the first side of the third scribed groove group. The first and second sides are opposite each other along a first direction. The remaining sub-cells are electrically isolated from the bottom electrode layer retained around the first scribed groove group and the top electrode layer retained around the third scribed groove group. The first, second, and third directions intersect each other.

12. The preparation method according to claim 11, wherein, The step of forming a semiconductor layer on the bottom electrode layer and cutting the semiconductor layer to form a second group of scribed grooves arranged along the second direction includes: A first transmission layer, a light-absorbing layer, and a second transmission layer are formed on the bottom electrode layer; The semiconductor layer is cut to form a second group of scribed grooves arranged along the second direction; Remove the first transmission layer, the light-absorbing layer, and the second transmission layer from both sides of the second scribing groove group along the first direction; The first transport layer is either a hole transport layer or an electron transport layer, and the second transport layer is either a hole transport layer or an electron transport layer.

13. The preparation method according to claim 11 or 12, wherein, Each first scribing groove group includes a plurality of first horizontal scribing grooves, a first vertical long scribing groove, and a first vertical short scribing groove; each second scribing groove group includes a plurality of second horizontal scribing grooves and two second vertical scribing grooves; each third scribing groove group includes a plurality of third horizontal scribing grooves, third vertical long scribing grooves, and third vertical short scribing grooves. The first horizontal scribing grooves, the second horizontal scribing grooves, and the third horizontal scribing grooves all extend along a first direction and are arranged parallel to each other along a second direction. Each first horizontal scribing groove has a second horizontal scribing groove on one side along the second direction, and each second horizontal scribing groove has a third horizontal scribing groove on the side along the second direction away from the nearest first horizontal scribing groove. The second vertical scribing groove, the first vertical long scribing groove, the third vertical long scribing groove, the first vertical short scribing groove, and the third vertical short scribing groove all extend along the second direction. All the first vertical long scribing grooves are connected end to end to form a first integral scribing groove, and the first integral scribing groove has an intersection point with each of the first horizontal scribing grooves. The first vertical short scribbled groove has an intersection point with each first horizontal scribbled groove in the first scribbled groove group to which it belongs, and the first vertical short scribbled grooves in adjacent first scribbled groove groups are isolated from each other. One of the second vertical scribing grooves in all the second scribing groove groups is connected end to end to form a second integral scribing groove, and another of the second vertical scribing grooves in all the second scribing groove groups is connected end to end to form a third integral scribing groove. The second integral scribing groove and the third integral scribing groove each have an intersection point with each of the second horizontal scribing grooves. All the third vertical long scribing grooves are connected end to end to form a fourth integral scribing groove, and the fourth integral scribing groove has an intersection point with each of the third horizontal scribing grooves; the third vertical short scribing groove has an intersection point with each of the third horizontal scribing grooves in the third scribing groove group to which it belongs, and the third vertical short scribing grooves in adjacent third scribing groove groups are isolated from each other. The first integral scribing groove, the second integral scribing groove, and the third vertical short scribing groove are all close to the same edge of the thin-film battery along the first direction; the first vertical short scribing groove, the third integral scribing groove, and the fourth integral scribing groove are all close to the other edge of the thin-film battery along the first direction. The first horizontal scribed groove, the second horizontal scribed groove, and the third horizontal scribed groove do not contact either of the two edges of the thin-film battery along the first direction.

14. The preparation method according to claim 13, wherein, For the second horizontal scribing groove between two adjacent groups of sub-cells, there is a third additional horizontal scribing groove on the side closest to the first horizontal scribing groove along the second direction, and the third additional horizontal scribing groove extends from the third vertical short scribing groove to the third vertical long scribing groove along the first direction; the third additional horizontal scribing groove belongs to the third scribing groove group.

15. The preparation method according to claim 13, wherein, The semiconductor layers between two adjacent sets of sub-cells are in contact.

16. The preparation method according to any one of claims 13-15, wherein, A plurality of the first scribing groove groups form a first scribing groove module; a plurality of the second scribing groove groups form a second scribing groove module; and a plurality of the third scribing groove groups form a third scribing groove module. Multiple first scribing groove modules are arranged along the second direction. The first integral scribing groove in one of the first scribing groove modules and the first vertical short scribing groove in the first scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other. The first integral scribing groove in the first scribing groove module and the first vertical short scribing groove in the first scribing groove module adjacent to the fourth side are located on the same side along the second direction and are connected to each other. Multiple second scribing groove modules are arranged along the second direction, all the second integral scribing grooves are connected to form a whole, and all the third integral scribing grooves are connected to form a whole; Multiple third scribing groove modules are arranged along the second direction. The fourth integral scribing groove in one of the third scribing groove modules and the third vertical short scribing groove in the third scribing groove module adjacent to the fourth side are located on the same side along the second direction and are isolated from each other. The fourth integral scribing groove in the third scribing groove module and the third vertical short scribing groove in the third scribing groove module adjacent to the third side are located on the same side along the second direction and are isolated from each other. The third side and the fourth side are opposite to each other along the second direction. Among them, the sub-batteries corresponding to the first scribing groove module, the second scribing groove module, and the third scribing groove module form a battery module, and different battery modules are connected in series.

17. The preparation method according to claim 16, wherein, The first horizontal scribe line groove and the third horizontal scribe line groove, which serve as a separator between two adjacent battery modules, also extend to one of the edges of the thin-film battery along the first direction; Two consecutive first horizontal scribed grooves, serving as separators, extend to different edges of the thin-film battery along the first direction, and two consecutive third horizontal scribed grooves, serving as separators, extend to different edges of the thin-film battery along the first direction.

18. A stacked battery, comprising a thin-film battery according to any one of claims 1-17 and a photoelectric conversion layer, wherein the semiconductor layer includes at least a light-absorbing layer, and the photoelectric conversion layer is located on one side of the light-absorbing layer along a third direction; wherein, The photoelectric conversion layer has a different band gap than the light-absorbing layer.

19. The stacked battery according to claim 18, wherein, The stacked battery includes one or more of mechanically stacked batteries and monolithically integrated stacked batteries.

20. A photovoltaic system comprising a thin-film battery as described in any one of claims 1-10 or a tandem battery as described in any one of claims 18-19.

21. An electrical device comprising a thin-film battery as described in any one of claims 1-10 or a stacked battery as described in any one of claims 18-19.

22. A power generation device comprising a thin-film battery as described in any one of claims 1-10 or a stacked battery as described in any one of claims 18-19.

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