Resin composition, method for producing joined body, joined body, and method for producing device

Abstract

Provided is a resin composition which is used in a method for producing a joined body, the method including: a step for preparing a substrate A having a surface that is provided with an electrode; a polyimide-containing part formation step for forming a polyimide-containing part on the surface that is provided with the electrode of the substrate A; a step for preparing a substrate B having a surface that is provided with an electrode; and a joining step. The polyimide-containing part formation step includes applying the resin composition to the surface that is provided with the electrode of the substrate A. The resin composition contains a resin that is a polyimide, and the imidization ratio of the resin is 80% or more. Also provided are: a method for producing a joined body; a joined body; and a method for producing a device.

Description

Resin composition, method for manufacturing joined body, joined body, and method for manufacturing device

[0001] The present invention relates to a resin composition, a method for producing a bonded body, a bonded body, and a method for producing a device.

[0002] Electronic devices such as mobile phones and tablet devices are becoming increasingly smaller while their functionality is becoming more diverse. To meet these demands, the electronic circuits incorporated into these devices must be further miniaturized, highly integrated, and packaged at high density. To achieve this, hybrid bonding is being considered as a method for joining the electrodes of two or more semiconductor devices. Hybrid bonding enables high-density interconnections without the use of wires, spherical solder bumps, or underfill, and enables the realization of fine wiring over short wiring distances. It offers various advantages, including improved electrical performance, reduced power consumption, and reduced communication latency.

[0003] For example, Patent Document 1 describes a resin composition for use in producing at least one of a first organic insulating film and a second organic insulating film in a method for manufacturing a semiconductor device, the method comprising: (A) at least one of a polyimide precursor, which is at least one resin selected from the group consisting of polyamic acid, polyamic acid ester, polyamic acid salt, and polyamic acid amide, and a polyimide resin; and (B) a solvent. The resin composition includes the following steps (1) to (5): Step (1): Preparing a first semiconductor substrate having a first substrate body and the first organic insulating film and a first electrode provided on one surface of the first substrate body. Step (2): Preparing a second semiconductor substrate having a second substrate body and the second organic insulating film and a plurality of second electrodes provided on one surface of the second substrate body. Step (3): Slicing the second semiconductor substrate into individual pieces to obtain a plurality of semiconductor chips, each of which has an organic insulating film portion corresponding to a portion of the second organic insulating film and at least one of the second electrodes. Step (4): The first organic insulating film of the first semiconductor substrate and the organic insulating film portion of the semiconductor chip are bonded to each other. Step (5): The first electrode of the first semiconductor substrate and the second electrode of the semiconductor chip are joined to each other.

[0004] International Publication No. 2022 / 071329

[0005] In hybrid bonding, when polyimide is used as an insulating film, a composition containing polyimide or its precursor is applied to a substrate having an electrode, the composition is cured to form a cured product, and the surface is polished before bonding. Here, excellent surface flatness of the cured product is considered to be one of the important factors, since it affects the amount of CMP polishing and the polishing time of the polyimide.

[0006] The present invention aims to provide a resin composition that exhibits excellent surface flatness of the cured product even when a polyimide-containing portion is formed on a surface having an electrode; a method for producing a bonded body that includes a step of forming a polyimide-containing portion on a surface having an electrode and that exhibits excellent surface flatness of the polyimide-containing portion in the step; a bonded body produced by the production method; and a method for producing a device that includes the production method of the bonded body.

[0007] Representative embodiments of the present invention are described below. <1> A resin composition for use in a method for producing a bonded body, comprising: a step of preparing a substrate A having an electrode-equipped surface; a polyimide-containing portion-forming step of forming a polyimide-containing portion on the electrode-equipped surface of the substrate A; a step of preparing a substrate B having an electrode-equipped surface; and a bonding step of bonding the polyimide-containing portion-equipped surface of the substrate A to the electrode-equipped surface of the substrate B, wherein the polyimide-containing portion-forming step comprises applying a resin composition to the electrode-equipped surface of the substrate A, the resin composition comprising a polyimide resin, and an imidization rate of the resin being 80% or more. <2> The resin composition according to <1>, further comprising a polymerizable compound and a polymerization initiator. <3> The resin composition according to <2>, wherein the polymerization initiator is a thermal polymerization initiator. <4> The resin composition according to <2>, wherein the polymerization initiator is a photopolymerization initiator. <5> The resin composition according to any one of <1> to <4>, wherein the resin has a polymerizable group. <6> The resin composition according to any one of <1> to <4>, wherein the resin has a repeating unit represented by the following formula (1-1): In formula (1-1), X１ includes a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formula (V-1), formula (V-2), formula (V-3), formula (V-5), and formula (V-8), and Y １ is a divalent organic group. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group, and in formula (V-3), R Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may bond to form a ring structure, and in formula (V-8), R Ｘ５ <7> In the above formula (1-1), Y is independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. １has a group having an ethylenically unsaturated bond. <8> A method for producing a bonded body, comprising: a step of preparing a substrate A having a surface provided with an electrode; a polyimide-containing portion-forming step of forming a polyimide-containing portion on the surface of the substrate A provided with the electrode; a step of preparing a substrate B having a surface provided with an electrode; and a joining step of joining the surface of the substrate A having the polyimide-containing portion and the surface of the substrate B provided with the electrode, wherein the polyimide-containing portion-forming step comprises applying a resin composition containing polyimide to the surface of the substrate A provided with the electrode, and wherein the imidization rate of the polyimide contained in the resin composition is 80% or more. <9> A method for producing a bonded body according to <8>, further comprising a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A, comprising the polyimide-containing portion-forming step, the planarization step, and the joining step in this order. <10> A method for producing a bonded body according to <8> or <9>, wherein the imidization rate of the polyimide in the polyimide-containing portion-forming step is 90% or more. <11> The method for producing a bonded body according to <8> or <9>, wherein the resin composition is applied by coating in the polyimide-containing portion-forming step. <12> The method for producing a bonded body according to <8> or <9>, further comprising a second polyimide-containing portion-forming step of forming a second polyimide-containing portion on the electrode-provided surface of the substrate B, wherein the second polyimide-containing portion-forming step and the bonding step are carried out in this order. <13> A bonded body produced by the production method of <8> or <9>. <14> A method for producing a device, comprising the method for producing a bonded body according to <8> or <9>.

[0008] According to the present invention, there are provided a resin composition that exhibits excellent surface flatness of the cured product even when a polyimide-containing portion is formed on a surface that includes an electrode; a method for producing a bonded body that includes a step of forming a polyimide-containing portion on a surface that includes an electrode and exhibits excellent surface flatness of the polyimide-containing portion in the step; a bonded body produced by the production method; and a method for producing a device that includes the method for producing the bonded body.

[0009] 1 is a process explanatory diagram showing, in schematic cross-sectional views, the steps of bonding substrates in a method for manufacturing a bonded body using the polyimide-containing portion-forming composition of the present invention according to one embodiment of the present invention; FIG. 2 is a process explanatory diagram showing, in schematic cross-sectional views, the steps of bonding substrates in a method for manufacturing a bonded body using the polyimide-containing portion-forming composition of the present invention according to one embodiment of the present invention (continuation of FIG. 2); FIG. 3 is a process explanatory diagram showing, in schematic cross-sectional views, the steps of bonding substrates in a method for manufacturing a bonded body using the polyimide-containing portion-forming composition of the present invention according to one embodiment of the present invention (continuation of FIG. 3); FIG. 4 is a cross-sectional view schematically showing an example of a three-dimensionally mounted semiconductor device using TSV; and FIG. 5 is a schematic cross-sectional view showing details of the substrate used in the examples.

[0010] The following describes the main embodiments of the present invention. However, the present invention is not limited to the explicitly described embodiments. In this specification, a numerical range expressed using the symbol "to" means a range that includes the numerical values ​​before and after "to" as the lower and upper limits, respectively. In this specification, the term "process" refers not only to an independent process but also to a process that cannot be clearly distinguished from other processes as long as the process achieves its intended effect. In the description of a group (atomic group), a notation that does not specify whether it is substituted or unsubstituted encompasses both unsubstituted groups (atomic groups) and substituted groups (atomic groups). For example, the term "alkyl group" encompasses not only unsubstituted alkyl groups (unsubstituted alkyl groups) but also substituted alkyl groups (substituted alkyl groups). In this specification, unless otherwise specified, "exposure" includes not only exposure using light but also exposure using particle beams such as electron beams and ion beams. In addition, examples of light used for exposure include actinic rays or radiation such as the bright line spectrum of a mercury lamp, far ultraviolet light typified by excimer lasers, extreme ultraviolet light (EUV light), X-rays, and electron beams. As used herein, "(meth)acrylate" refers to either or both of "acrylate" and "methacrylate," "(meth)acrylic" refers to either or both of "acrylic" and "methacrylic," and "(meth)acryloyl" refers to either or both of "acryloyl" and "methacryloyl." In the structural formulae herein, Me represents a methyl group, Et represents an ethyl group, Bu represents a butyl group, and Ph represents a phenyl group. As used herein, the term "total solid content" refers to the total mass of all components of the composition excluding the solvent. Furthermore, as used herein, the term "solid content concentration" refers to the mass percentage of the components other than the solvent relative to the total mass of the composition. As used herein, the weight average molecular weight (Mw) and number average molecular weight (Mn) are values ​​measured using gel permeation chromatography (GPC) and are defined as polystyrene equivalent values, unless otherwise specified.In this specification, the weight-average molecular weight (Mw) and number-average molecular weight (Mn) can be determined, for example, by using an HLC-8220GPC (manufactured by Tosoh Corporation) and guard columns HZ-L, TSKgel Super HZM-M, TSKgel Super HZ4000, TSKgel Super HZ3000, and TSKgel Super HZ2000 (all manufactured by Tosoh Corporation) connected in series. Unless otherwise specified, these molecular weights are measured using NMP (N-methyl-2-pyrrolidone) as the eluent. However, when NMP is not suitable as the eluent, for example, due to low solubility, THF (tetrahydrofuran) can also be used. Furthermore, unless otherwise specified, detection in GPC measurement is assumed to be performed using a UV (ultraviolet) detector at a wavelength of 254 nm. In this specification, when the positional relationship of each layer constituting a laminate is described as "above" or "below," it is sufficient that another layer is above or below the reference layer among the multiple layers being considered. In other words, a third layer or element may be interposed between the reference layer and the other layer, and the reference layer and the other layer do not need to be in contact with each other. Unless otherwise specified, the direction in which layers are stacked on the substrate is referred to as "above." Alternatively, if a resin composition layer is present, the direction from the substrate to the resin composition layer is referred to as "above," and the opposite direction is referred to as "below." Note that such vertical directions are defined for convenience in this specification, and in actual embodiments, the "above" direction in this specification may differ from the vertically upward direction. In this specification, unless otherwise specified, the composition may contain two or more compounds corresponding to each component contained in the composition. Unless otherwise specified, the content of each component in the composition means the total content of all compounds corresponding to that component. In this specification, unless otherwise specified, the temperature is 23° C., the atmospheric pressure is 101,325 Pa (1 atmosphere), and the relative humidity is 50% RH. In this specification, a combination of preferred embodiments is a more preferred embodiment.

[0011] (Resin Composition) The resin composition of the present invention is a resin composition used in a method for producing a bonded body, the method comprising the steps of preparing a substrate A having an electrode-equipped surface, forming a polyimide-containing portion on the electrode-equipped surface of the substrate A, preparing a substrate B having an electrode-equipped surface, and bonding the polyimide-containing portion-containing surface of the substrate A to the electrode-equipped surface of the substrate B, wherein the polyimide-containing portion-forming step comprises applying a resin composition to the electrode-equipped surface of the substrate A. The resin composition contains a polyimide resin, and the imidization rate of the resin is 80% or higher. Hereinafter, the polyimide having an imidization rate of 80% or higher contained in the resin composition of the present invention is also referred to as a "specific resin."

[0012] When a polyimide-containing resin composition is applied to a substrate having irregularities, such as a substrate having electrodes (e.g., copper / tin pillars), the thickness of the resin composition film applied to the substrate at the locations where protrusions such as pillars are present is small, while the thickness of the resin composition film applied to the locations where the protrusions are not present is large. When the resin composition is then cured, the cure shrinkage is large in the thicker portions of the resin composition film and small in the thinner portions. In other words, the flatness of the film surface obtained after curing may be reduced. The present inventors focused on the fact that the cure shrinkage is caused by the imidization of a polyimide precursor to polyimide, and completed the present invention. The resin composition of the present invention contains a polyimide resin, and the imidization rate of the resin is 80% or more. By using such a resin composition, the components that decompose from the resin during imidization are reduced, and the cure shrinkage of the resin composition is reduced. As a result, it is believed that a cured product with excellent surface flatness can be obtained even when applied to a substrate having irregularities. When a composition with large cure shrinkage and poor surface flatness of the resulting cured product is used, the resin composition is applied to a large thickness to reduce the difference between the thickness of the resin composition film on the convex portions and the thickness of the resin composition film on the non-convex portions. This method requires a large amount of resin composition to be used because the resin composition is applied thickly. However, the resin composition of the present invention has excellent surface flatness, which allows the thickness of the resin composition applied to the substrate to be reduced, thereby reducing the amount of resin composition used. Furthermore, after forming the cured product, the surface of the resin composition may be polished using methods such as CMP (Chemical Mechanical Polishing) before the bonding process. In such cases, the use of the resin composition of the present invention has the advantage of shortening the polishing time due to the excellent surface flatness of the cured product. Furthermore, the resin composition of the present invention has the advantage of low cure shrinkage, which reduces warping of the substrate during curing. Thus, using the resin composition of the present invention in a manufacturing method for a bonded body offers various industrial advantages. The resin composition of the present invention will be described in detail below.

[0013] (Method for Producing Bonded Article) First, a method for producing a bonded article using the resin composition of the present invention will be described.

[0014] <Step of Preparing Substrate A> The method for producing a bonded body of the present invention includes a step of preparing a substrate A having a surface provided with an electrode. In the step of preparing the substrate A, the substrate A may be produced by a known method (e.g., plating a substrate such as a silicon substrate) or may be obtained by purchase or other means.

[0015] [Substrate A] Substrate A has a surface having an electrode. Hereinafter, the electrode on substrate A will also be referred to as electrode A.

[0016] The form of the substrate A may be a wafer or a chip, but a wafer is also one of the preferred embodiments of the present invention. In this invention, a wafer refers to a substrate containing a semiconductor, and is a concept that includes panels formed from multiple semiconductor elements. In this invention, a chip refers to an individual piece containing a semiconductor formed by dicing or the like, and may be a single-sided chip or a double-sided chip.

[0017] The shape of the substrate A is not particularly limited, but examples include a polygonal plate, a disk, and a polyhedron. The thickness of the substrate A is preferably 0.1 to 5 mm, more preferably 0.2 to 1 mm. The electrode A on the substrate A is preferably a pillar electrode. Furthermore, the electrode A preferably contains a metal, more preferably at least one metal selected from the group consisting of tin (Sn), gold (Au), silver (Ag), copper (Cu), aluminum (Al), tungsten (W), palladium (Pd), platinum (Pt), cobalt (Co), nickel (Ni), zinc (Zn), ruthenium (Ru), iridium (Ir), rhodium (Rh), lead (Pb), bismuth (Bi), and indium (In), and even more preferably at least one metal selected from the group consisting of copper, tin, and nickel. In this specification, the inclusion of at least one of a metal X or an alloy containing that metal is collectively referred to simply as "containing a metal X." The alloy may contain elements other than those exemplified above. For example, a copper alloy may contain silicon atoms to form a Corson alloy. Furthermore, unavoidable dissolved oxygen and organic residues of raw material compounds mixed in during precipitation may be present. The electrode A may be an electrode comprising multiple different components. For example, a substrate may have a portion (hereinafter also referred to as an "electrode portion") made of a metal such as copper, silver, gold, or an alloy containing one or more of these metals, and a portion (hereinafter also referred to as a "conductive path") used as solder made of a metal such as nickel, tin, lead, or an alloy containing one or more of these metals may be formed on the copper electrode portion, and the electrode portion and the conductive path may exist in series to form a single electrode A. Among these, the electrode A is preferably an electrode A comprising at least a copper-containing member and a tin-containing member. An example of a substrate A having a surface provided with such an electrode A is the substrate a used in the examples of the present application. In substrate a, a conductive path made of tin is formed on the copper electrode portion.

[0018] The material used for the electrode portion is not particularly limited, but examples thereof include tin, gold, silver, copper, aluminum, tungsten, palladium, platinum, cobalt, nickel, zinc, ruthenium, iridium, rhodium, and alloys thereof. Among these, metals containing copper, aluminum, tungsten, nickel, or gold are preferred for the electrode portion, with copper being more preferred, and copper being even more preferred. It is preferable to use a metal that does not melt during the joining process as the metal used for the electrode portion. The melting point of the metal used for the electrode portion is preferably 500°C or higher, more preferably 700°C or higher, and even more preferably 800°C or higher. There is no particular upper limit, but it is preferably 3000°C or lower. The material used for the conductive path is not particularly limited, but examples thereof include tin, lead, silver, copper, zinc, bismuth, indium, or alloys thereof. Among these, in the present invention, solder made of tin or a tin alloy (metal containing tin) is preferred. Recently, lead-free soldering technology has advanced, and it is also preferable to select such materials. The metal used for the conductive path is preferably a metal that melts in the joining step. The melting point of the metal used for the conductive path is preferably 400°C or less, more preferably 300°C or less, and even more preferably 250°C or less. The lower limit of the melting point is not particularly limited as long as it is solid at room temperature, but is preferably 150°C or more, for example. In addition, it is preferable that a plurality of electrodes A are formed on the substrate A.

[0019] The material used for the substrate A is not particularly limited, and may be a semiconductor substrate such as silicon, silicon nitride, polysilicon, silicon oxide, or amorphous silicon; quartz, glass, an optical film, a ceramic material, a vapor deposition film, a magnetic film, a reflective film, a metal substrate such as Ni, Cu, Cr, or Fe; paper; SOG (Spin-on-Glass); a TFT (Thin Film Transistor) array substrate; or an electrode plate for a plasma display panel (PDP). The substrate may have a surface layer such as an adhesion layer or an oxide layer formed from hexamethyldisilazane (HMDS). In the present invention, a semiconductor substrate is particularly preferred, and a silicon substrate (silicon wafer) is more preferred. The substrate A may have an electronic circuit region including an electronic circuit. The electronic circuit may also have elements such as semiconductors. The electronic circuit is preferably electrically connected to the electrode A. When the substrate A is a wafer, the diameter (maximum diameter if the substrate A is not circular) may be 100 mm or more. Furthermore, for large substrates, for example, a size of 200 mm or more is preferred, and a size of 250 mm or more is more preferred. There is no particular upper limit, but a size of 2,000 mm or less is preferred. When substrate A is a chip, the size is preferably a diameter (maximum diameter if substrate A is not circular) of 7 mm or more, more preferably 10 mm or more, and even more preferably 20 mm or more. The upper limit is, for example, preferably 50 mm or less, more preferably 40 mm or less, and even more preferably 30 mm or less.

[0020] <Polyimide-Containing Portion Forming Step> The method for producing a bonded body of the present invention includes a polyimide-containing portion forming step of forming a polyimide-containing portion on the surface of the substrate A that includes the electrode (electrode A). The polyimide-containing portion is preferably formed so as to contact the electrode A, and more preferably so as to fill the recess between the electrodes A. Here, forming a polyimide-containing portion on the surface of the substrate A that includes the electrode (electrode A) means that the polyimide-containing portion is formed on the surface that includes the electrode (electrode A). For example, another layer may be formed on the surface of the substrate A, and the polyimide-containing portion may be formed so as to fill the recess between the electrodes A. In other words, the surface of the substrate A and the polyimide-containing portion do not necessarily need to be in contact with each other, and another layer, such as an adhesive layer, may be formed between the surface of the substrate A and the polyimide-containing portion. Furthermore, the polyimide-containing portion may be formed on at least a portion of the electrode A. However, an embodiment in which the polyimide-containing portion is formed on the entire electrode A is also a preferred embodiment of the present invention. The polyimide-containing portion forming step preferably includes applying the resin composition of the present invention to the surface of the substrate A that includes the electrode, followed by heating. Details of application and heating are given below.

[0021] [Polyimide-containing portion] The polyimide-containing portion is preferably a member containing polyimide, and may further contain components other than polyimide. Examples of components other than polyimide include components other than polyimide contained in the resin composition of the present invention described below, and components obtained by modifying such components (decomposition, polymerization, structural change, etc.) by heating. Details of these polymerizable compounds will be described later.

[0022] The thickness of the polyimide-containing portion is not particularly limited, but from the viewpoint of exerting the effects of its physical properties, the thickness immediately before the bonding step (if a planarization step described below is performed, the thickness immediately before the planarization step) is preferably 100 nm or more, more preferably 300 nm or more, even more preferably 500 nm or more, even more preferably 1 μm or more, and even more preferably 2 μm or more. There is no particular upper limit, but it is preferably 1 mm or less, more preferably 500 μm or less, and even more preferably 200 μm or less. The thickness of the film can be measured using a known film thickness measuring device.

[0023] [Application Step] The polyimide-containing portion forming step is preferably a step including applying the resin composition of the present invention (hereinafter also simply referred to as "resin composition") onto the surface of the substrate A having the electrode A (application step). Here, the polyimide-containing portion forming step is a step of applying a polyimide-containing portion forming composition onto the surface of the substrate A having the electrode, and it is also preferable that the resin composition of the present invention includes a polyimide and a solvent. As described above, other layers may be further formed on the surface of the substrate A, and the resin composition of the present application may be applied onto the other layers formed on the surface of the substrate A. It is preferable that the resin composition further includes a migration inhibitor. Details of the components contained in the resin composition of the present invention, such as these migration inhibitors, will be described later.

[0024] The application of the resin composition in the polyimide-containing portion forming step is preferably carried out by coating. When the resin composition is applied by coating, there is no need to apply pressure to the pillar substrate when applying the resin composition, which has the advantage of making it less likely to cause damage to the substrate, such as chip cracking. Examples of means for applying the resin composition to the substrate A include dip coating, air knife coating, curtain coating, wire bar coating, gravure coating, extrusion coating, spray coating, spin coating, slit coating, and inkjet methods. From the viewpoint of film thickness uniformity, spin coating, slit coating, spray coating, or inkjet methods are more preferred, and from the viewpoint of film thickness uniformity and productivity, spin coating and slit coating are preferred. A film of the desired thickness can be obtained by adjusting the solid content concentration and application conditions of the resin composition depending on the method. In addition, the coating method can be appropriately selected depending on the shape of the substrate. For circular substrates such as wafers, spin coating, spray coating, inkjet methods, etc. are preferred, and for rectangular substrates, slit coating, spray coating, inkjet methods, etc. are preferred. In the case of spin coating, for example, the coating can be performed at a rotation speed of 500 to 3,500 rpm for about 10 seconds to 3 minutes. Alternatively, a coating film formed by applying the coating film to a temporary support using the above-described application method can be transferred onto the substrate. Regarding the transfer method, the preparation methods described in paragraphs 0023 and 0036 to 0051 of JP-A No. 2006-023696 and paragraphs 0096 to 0108 of JP-A No. 2006-047592 can also be suitably used in the present invention.

[0025] For example, the resin composition of the present invention may be formed into a film and used. Specifically, the resin composition of the present invention containing a solvent can be applied to a film-like temporary support, and the solvent can be removed to form a resin film with a temporary support. The resin film with the temporary support is laminated onto a substrate A, and the temporary support is removed, allowing the resin composition to be applied to the electrode-bearing surface of the substrate A. The pressure during lamination is preferably 1 MPa or less, and more preferably 0.1 to 0.3 MPa. Here, the use of such a resin film with a temporary support simplifies the polyimide-containing portion formation process, and by preparing dry films with different resin film thicknesses, it becomes easy to form resin films of the desired thickness on various substrates A. In the resin film, the solvent content can be 5% by mass or less relative to the total mass of the resin film. As a method for removing the solvent, a solvent removal process can be carried out under conditions of, for example, 100°C to 150°C and 1 minute to 5 minutes.

[0026] The resin film with a temporary support may be in the form of a roll that can be wound up, or in the form of a sheet such as a rectangular sheet.

[0027] Examples of the temporary support include polymer films and metal foils. Examples of polymer films include, but are not limited to, polyolefins such as polyethylene and polypropylene, polyesters such as polyethylene terephthalate and polybutylene terephthalate, polycarbonates, release papers such as silicone sheets, and heat-resistant thermoplastic resin sheets such as fluorine-based resins and polyimide resins. Examples of metal foils include, but are not limited to, copper or copper-containing alloys, aluminum or aluminum-containing alloys, iron or iron-containing alloys, silver or silver-based alloys, gold or gold-containing alloys, zinc or zinc-containing alloys, nickel or nickel-containing alloys, and tin or tin-containing alloys. From the viewpoint of adjusting the peel strength, polyesters such as polyethylene terephthalate and polybutylene terephthalate are preferred, and polyethylene terephthalate is more preferred.

[0028] The thickness of the temporary support is not particularly limited, but may be, for example, 10 to 100 μm, or 10 to 70 μm, which is preferable because it allows for good handling when producing a resin film with a temporary support.

[0029] The resin film with temporary support may be a single layer or a multilayer, and may contain one or more types of resin film. In the case of a multilayer, the resin films may be the same or different. In addition, the resin film with temporary support may have a protective film on the outermost layer side of the resin film.

[0030] In the present embodiment, the method for forming a resin film with a temporary support is not particularly limited, but for example, a method can be used in which the resin composition of the present invention in a varnish form is applied to a temporary support using, for example, a comma coater, a die coater, a lip coater, or a bar coater to form a coating film, and then the coating film is appropriately dried to remove the solvent. Among such coating methods, a comma coater may be used from the viewpoint of productivity.

[0031] In addition, a process of removing excess film from the edge of the substrate may be performed. Examples of such a process include edge bead rinsing (EBR) and back rinsing. A pre-wetting process may also be employed in which various solvents are applied to the substrate before the resin composition is applied to the substrate to improve the wettability of the substrate.

[0032] Furthermore, when the resin composition contains a solvent, a step (drying step) of drying a member (hereinafter also simply referred to as a "film") made of the resin composition after applying the resin composition to the substrate A may be included. The drying temperature in the drying step is preferably 50 to 150°C, more preferably 70 to 130°C, and even more preferably 90 to 110°C. Drying may also be performed under reduced pressure. The drying time is, for example, 30 seconds to 20 minutes, preferably 1 to 10 minutes, and more preferably 2 to 7 minutes.

[0033] The thickness immediately after application (or the thickness after drying if a drying step is performed) is not particularly limited, and may be appropriately adjusted so that the thickness of the resulting polyimide-containing portion becomes the thickness described below.

[0034] The polyimide-containing portion forming step may include a step of patterning a member made of a resin composition. When a resin composition containing a photosensitive compound such as a photopolymerization initiator described below is used, this patterning can be performed by exposure and development. After the polyimide-containing portion is formed, its surface may be planarized. Details of planarization will be described later. Note that when patterning is performed, the thickness of the portion removed by development or the like is not used in calculating the film thickness difference (T1-T2) described later.

[0035] [Exposure Step] In the polyimide-containing portion-forming step, the film formed from the resin composition may be subjected to an exposure step in which the film is selectively exposed. That is, the method for producing a bonded body of the present invention may include an exposure step in which the film formed in the application step is selectively exposed in the polyimide-containing portion-forming step. Selective exposure means exposing a portion of the polyimide-containing portion. Furthermore, selective exposure forms an exposed region (exposed portion) and an unexposed region (unexposed portion) in the polyimide-containing portion. For details of the exposure step, such as the exposure means and exposure conditions, please refer to the descriptions in paragraphs 0027 to 0029 of JP 2023-178289 A. The above descriptions are incorporated herein by reference.

[0036] <Post-exposure baking step> The film subjected to the exposure step may be subjected to a heating step (post-exposure baking step) after exposure. That is, the method for producing a bonded body of the present invention may include a post-exposure baking step in which the polyimide-containing portion exposed in the exposure step is heated. The post-exposure baking step can be carried out after the exposure step and before the development step. For details of the post-exposure baking step, the description in paragraph 0030 of JP-A-2023-178289 can be referenced. The above description is incorporated herein by reference.

[0037] <Development Step> The film after exposure may be subjected to a development step in which it is developed using a developer to form a pattern. That is, the method for producing a bonded body of the present invention may include a development step in which the film exposed in the exposure step is developed using a developer to form a pattern in the polyimide-containing portion formation step. By performing development, one of the exposed and unexposed portions of the film is removed to form a pattern. Here, development in which the unexposed portion of the polyimide-containing portion is removed in the development step is referred to as negative development, and development in which the exposed portion of the polyimide-containing portion is removed in the development step is referred to as positive development. By performing exposure and development, for example, it is possible to remove the resin composition from the portion cut during dicing (dicing line). According to such an embodiment, for example, it is possible to prevent the introduction of foreign matter due to resin peeling during dicing. As a result, it is possible to improve the yield in the production of bonded bodies. For details of the development step, such as the developer, development method, and development conditions, please refer to the descriptions in paragraphs 0031 to 0047 of JP 2023-178289 A. The above descriptions are incorporated herein by reference.

[0038] <Heating Step> The polyimide-containing portion-forming step is preferably subjected to a heating step in which the applied resin composition of the present invention is heated. That is, the polyimide-containing portion-forming step may include a heating step in which the polyimide-containing portion is heated. For example, an embodiment in which a film made of the resin composition formed in the applying step is heated, or an embodiment in which a film patterned after the applying step through an exposure step and a development step is heated, may be mentioned. In the heating step, a portion of the structure contained in the specific resin may be further cyclized. Furthermore, crosslinking of crosslinkable groups in the specific resin or a crosslinking agent other than the specific resin may also proceed. The heating temperature (maximum heating temperature) in the heating step is preferably 250°C or less, more preferably 220°C or less, even more preferably 200°C or less, and may also be 180°C or less. The lower limit of the heating temperature is preferably 160°C or more, more preferably 170°C or more.

[0039] The heating step is preferably a step of promoting polymerization of the polymerizable group in the polyimide-containing portion by heating, and may also be a step of promoting a cyclization reaction of the specific resin by heating.

[0040] The heating step is preferably carried out at a temperature increase rate of 1 to 12°C / min from the temperature at the start of heating to the maximum heating temperature. The temperature increase rate is more preferably 2 to 10°C / min, and even more preferably 3 to 10°C / min. By setting the temperature increase rate to 1°C / min or more, it is possible to prevent excessive volatilization of the acid or solvent while ensuring productivity, and by setting the temperature increase rate to 12°C / min or less, it is possible to alleviate residual stress in the cured product. In addition, in the case of an oven capable of rapid heating, it is preferable to increase the temperature from the temperature at the start of heating to the maximum heating temperature at a temperature increase rate of 1 to 8°C / sec, more preferably 2 to 7°C / sec, and even more preferably 3 to 6°C / sec.

[0041] The temperature at the start of heating is preferably 20°C to 150°C, more preferably 20°C to 130°C, and even more preferably 25°C to 120°C. The temperature at the start of heating refers to the temperature at the start of the process of heating up to the maximum heating temperature. For example, when the resin composition of the present invention is applied to a substrate and then dried, the temperature is the temperature of the film (layer) after drying, and is preferably raised from a temperature that is 30 to 200°C lower than the boiling point of the solvent contained in the resin composition of the present invention.

[0042] The heating time (heating time at the maximum heating temperature) is preferably 1 to 60 minutes, more preferably 2 to 30 minutes, and even more preferably 5 to 20 minutes.

[0043] Heating may be performed in stages. For example, the temperature may be increased from 25°C to 120°C at a rate of 3°C / min, held at 120°C for 60 minutes, increased from 120°C to 200°C at a rate of 2°C / min, and held at 200°C for 10 minutes. It is also preferable to treat the film while irradiating it with ultraviolet light, as described in U.S. Pat. No. 9,159,547. Such a pretreatment step can improve the film's properties. The pretreatment step may be performed for a short period of time, preferably from 10 seconds to 2 hours, more preferably from 15 seconds to 30 minutes. The pretreatment step may be performed in two or more steps. For example, a first pretreatment step may be performed in the range of 100 to 150°C, followed by a second pretreatment step in the range of 150 to 200°C. Furthermore, cooling may be performed after heating. In this case, the cooling rate is preferably from 1 to 5°C / min.

[0044] The heating step is preferably carried out in an atmosphere with a low oxygen concentration by flowing an inert gas such as nitrogen, helium, or argon, or by carrying out the heating step under reduced pressure, in order to prevent decomposition of the specific resin. The oxygen concentration is preferably 50 ppm (volume ratio) or less, more preferably 20 ppm (volume ratio) or less. The heating means used in the heating step is not particularly limited, but examples thereof include a hot plate, an infrared oven, an electric heating oven, a hot air oven, and an infrared oven.

[0045] <Post-exposure step> The polyimide-containing portion obtained in the polyimide-containing portion-forming step may be subjected to a post-exposure step in which the polyimide-containing portion is exposed to light, instead of or in addition to the heating step. That is, the method for producing a joined body of the present invention may include a post-exposure step in which the polyimide-containing portion is exposed to light. The method for producing a joined body of the present invention may include a heating step and a post-exposure step, or may include only one of the heating step and the post-exposure step. In the post-exposure step, for example, a reaction in which cyclization of polyimide or the like progresses due to the exposure of the photobase generator to light can be promoted. In the post-exposure step, it is sufficient that at least a portion of the polyimide-containing portion is exposed, but it is preferable that the entire polyimide-containing portion is exposed. The exposure dose in the post-exposure step is 50 to 20,000 mJ / cm in terms of exposure energy at a wavelength to which the photosensitive compound is sensitive. ２It is preferable that the intensity is 100 to 15,000 mJ / cm ２ The post-exposure step can be carried out using, for example, the light source used in the exposure step described above, and it is preferable to use broadband light.

[0046] <Formation of Two or More Layers> In the polyimide-containing portion-forming step, forming the polyimide-containing portion in two or more layers is also a preferred embodiment of the present invention. That is, the polyimide-containing portion may have a structure in which multiple layers made of a resin composition are laminated. However, the interface between these layers may not be clearly defined due to, for example, a portion of the first layer being dissolved in a solvent during the formation of the second layer. Having the polyimide-containing portion in a two or more layer configuration has advantages such as improving the surface flatness of the polyimide-containing portion, making it easier to perform the flattening step described below. In the above embodiment, the polyimide-containing portion is preferably formed in two to four layers, more preferably in two or three layers, and even more preferably in two layers. When forming the polyimide-containing portion in two or more layers, for example, the application step (and, if necessary, a drying step) may be performed consecutively followed by the heating step, or the application step (and, if necessary, a drying step) and heating step may be repeated multiple times. Alternatively, for example, an application step (and, if necessary, a drying step) may be performed consecutively, followed by the above-described exposure step, post-exposure baking step, and development step as needed, followed by the above-described heating step. Alternatively, the above-described application step, and, if necessary, the exposure step, post-exposure baking step, and development step may be performed, followed by the above-described heating step to form a first layer. The above-described application step, and, if necessary, the exposure step, post-exposure baking step, and development step may then be performed on the first layer, followed by the above-described heating step to form a second or subsequent layer. Furthermore, when performing the application step through the heating step on the first layer, the conditions for the exposure step, heating step, etc., which are performed as needed, may be adjusted to semi-cure the resulting layer, and the application step through the heating step for the second or subsequent layer may then be performed. Furthermore, when the polyimide-containing portion is formed in two or more layers, the components contained in the resin composition used to form each layer, and the content ratios of each component, may be the same or different.

[0047] <Step of Preparing Substrate B> The method for producing a bonded body of the present invention includes a step of preparing a substrate B having a surface on which an electrode is provided.

[0048] The form of the substrate B may be a wafer or a chip, which may be selected depending on the desired design of the bonded body.

[0049] [Substrate B] Substrate B has an electrode. Hereinafter, the electrode on substrate B will also be referred to as electrode B.

[0050] The thickness of the substrate B is preferably 0.1 to 5 mm, more preferably 0.2 to 1 mm. In the bonded body obtained by the bonding step described below, it is preferable that at least a part of the electrode B is electrically bonded to the electrode A of the substrate A.

[0051] The material used for the substrate B is not particularly limited, and preferred examples include the same materials as those for the substrate A described above. The preferred embodiments of the electrode B are also the same as those for the electrode A. The substrate B may have an electronic circuit region including an electronic circuit. The electronic circuit may include elements such as semiconductors. The electronic circuit is preferably electrically connected to the electrode. When the substrate B is a wafer, the diameter (maximum diameter if the substrate B is not circular) can be 100 mm or more. For large substrates, the diameter is preferably 200 mm or more, and more preferably 250 mm or more. There is no particular upper limit, but it is preferably 2,000 mm or less. When the substrate B is a chip, the diameter (maximum diameter if the substrate B is not circular) is preferably 7 mm or more, more preferably 8 mm or more, and even more preferably 10 mm or more. The upper limit is, for example, preferably 50 mm or less, more preferably 30 mm or less, and even more preferably 20 mm or less.

[0052] In addition, it is also preferable that substrate B includes an inorganic insulating film between the electrodes. Examples of inorganic insulating films include, but are not limited to, silicon oxide films, silicon nitride films, silicon oxynitride films (the oxygen and nitrogen content ratio is not particularly limited), aluminum oxide films, aluminum nitride films, hafnium oxide films, yttrium oxide films, zirconium oxide films, gallium oxide films, tantalum oxide films, magnesium oxide films, lanthanum oxide films, cerium oxide films, neodymium oxide films, and silicon carbon nitride (SiCN) films. Specific examples of substrate B including an inorganic insulating film include substrates b to d in the examples described below. The inorganic insulating film preferably insulates the multiple electrodes included in electrode B. In addition, when substrate B includes an inorganic insulating film, a second polyimide-containing portion forming step described below may be performed, but the second polyimide-containing portion forming step may not be performed.

[0053] <Second Polyimide-Containing Formation Step> The method for producing a bonded body of the present invention further includes a second polyimide-containing portion-forming step of forming a second polyimide-containing portion on the electrode-containing surface of the substrate B, and preferably includes the second polyimide-containing portion-forming step and the bonding step in this order. The second polyimide-containing portion-forming step can be performed, for example, by a method similar to the polyimide-containing portion-forming step for the substrate A described above. Here, in the second polyimide-containing portion-forming step, the resin composition of the present invention may be used, or other known compositions for forming a polyimide-containing portion may be used, but it is preferable to use the resin composition of the present invention. However, when the resin composition of the present invention is used in the second polyimide-containing portion-forming step, the composition of the resin composition of the present invention used in the second polyimide-containing portion-forming step may be the same as or different from the composition of the resin composition used in the polyimide-containing portion-forming step for the substrate A. Preferred aspects of the second polyimide-containing portion are the same as the preferred aspects of the polyimide-containing portion formed in the substrate A described above. In the bonding step described below, it is believed that bonding the second polyimide-containing portion and the polyimide-containing portion formed on the substrate A so that they are in contact with each other at least in part will improve the adhesiveness of the bonded body.

[0054] [Planarization Step] The method for producing a bonded body of the present invention preferably further includes a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A, and includes the polyimide-containing portion-forming step, the planarization step, and the bonding step in this order. In the bonding step described below, the planarized polyimide-containing portion of the substrate A and the surface of the substrate B (or the surface of the second polyimide-containing portion, which may be planarized) are preferably bonded to each other so as to come into contact with each other.

[0055] The planarization preferably exposes electrode A on substrate A from the polyimide-containing portion. Furthermore, in substrate A and the polyimide-containing portion after the planarization, electrode A and the polyimide-containing portion may be at the same height, or electrode A may be recessed relative to the polyimide-containing portion, or the polyimide-containing portion may be recessed relative to electrode A. Here, the difference in height between electrode A and the polyimide-containing portion is preferably ±1 μm or less, more preferably ±0.5 μm or less. The planarization may be performed by physical polishing such as cutting, mechanical polishing, grinding, plasma treatment, or laser ablation, or by chemical polishing such as CMP (Chemical Mechanical Polishing). The polishing rate of the polyimide-containing portion during the planarization is preferably 100 nm / min or more, more preferably 200 nm / min or more, and even more preferably 400 nm / min or more. The upper limit of the polishing rate is not particularly limited, but is preferably less than 3000 nm / min from the viewpoint of controlling the in-plane uniformity of the polished object. The polishing rate of electrode A on substrate A during the planarization is preferably equal to or less than the polishing rate of the polyimide-containing portion, and more preferably equal to or less than half of the polishing rate of the polyimide-containing portion. The slurry used for the CMP is not particularly limited, but silica slurry, ceria slurry, alumina slurry, etc. can be used. For example, alumina slurry is preferred from the viewpoints of flatness and polishing rate, and silica slurry is preferred from the viewpoint of polishing rate. The particle size of the slurry is not particularly limited, but from the viewpoint of scratch prevention, an average particle size of 1000 nm or less is preferred, an average particle size of 500 nm or less is more preferred, and an average particle size of 200 nm or less is even more preferred. The lower limit of the particle size of the slurry is not particularly limited, but from the viewpoint of polishing rate, it is preferably 10 nm or more. These methods may also be combined, such as by performing CMP after cutting. Specifically, for example, the surface of the polyimide-containing portion is cut with a diamond cutting tool to expose a new surface of the polyimide-containing portion and electrode A.By performing a planarization process on the electrode A and the polyimide-containing portion on the substrate A so that the electrode A is exposed, the electrode A and the polyimide-containing portion can be planarized together, thereby exposing the top of the electrode A. The planarization can be performed using, for example, a surface planer. An example of a surface planer is one with a diamond bit attached to a spindle, and examples of such surface planers include DFS8910, DFS8960, DAS8920, and DAS8930 (all trade names) manufactured by Disco Corporation.

[0056] -TTV- In the planarization step, the polyimide-containing portion is preferably planarized together with the electrode A. As for the degree of planarization, the TTV (Total Thickness Variation) of the polyimide-containing portion and the electrode A is preferably 10 μm or less, more preferably 5 μm or less, and even more preferably 3 μm or less. In the present invention, TTV refers to the arithmetic mean value of the thickness differences (T1-T2) of the remaining compartments, obtained by dividing an area 1 mm or more inward from the edge of the polyimide-containing portion into 2 mm square sections (if the area of ​​the polyimide-containing portion is too small to be divided into 2 mm square sections, the entire area 1 mm or more inward from the edge of the polyimide-containing portion is considered to be one compartment), measuring the maximum thickness (T1) between one surface and the other surface for each compartment, and calculating the thickness difference (T1-T2) for each compartment, ranking the compartments in descending order of thickness difference (T1-T2), and excluding a number of compartments equivalent to 10% (rounded down if there is a decimal point) of the total number of compartments in descending order of thickness difference, starting from the top compartment (with the largest thickness difference) and a number of compartments equivalent to 10% (rounded down if there is a decimal point) of the total number of compartments in descending order of thickness difference, starting from the bottom compartment (with the smallest thickness difference). In this specification, when specifically meaning the TTV of the polyimide-containing portion defined herein, it may be referred to as the "compartment evaluation TTV." By setting the TTV of the polyimide-containing portion to the above upper limit value or less, the film thickness becomes generally uniform and the adhesion to the substrate B is improved.

[0057] -Ra- The polyimide-containing portion of the present invention preferably has a surface roughness Ra of 10 nm or more and 1.5 μm or less on the surface opposite to the side in contact with the surface of substrate A. The upper limit is preferably 1 μm or less, more preferably 500 nm or less, even more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 150 nm or less, and even more preferably 120 nm or less. By setting the surface roughness of the polyimide-containing portion to the above-mentioned lower limit or more, an anchor effect can be achieved, thereby improving adhesion to substrate B. Furthermore, by setting the surface roughness to the above-mentioned upper limit or less, it is possible to effectively suppress the occurrence of defects such as voids caused by bubbles or the like being included in the bond when bonding to substrate B.

[0058] When forming the second polyimide-containing portion on the substrate B, it is preferable to include a second planarization step of planarizing the surface of the second polyimide-containing portion between the second polyimide-containing portion-forming step and the bonding step. The second planarization step can be performed by the same method as the planarization step for the substrate A described above.

[0059] <Bonding Step> The method for producing a bonded body of the present invention includes a bonding step of bonding a surface of the substrate A having a polyimide-containing portion to a surface of the substrate B having the electrode. When the substrate B has a second polyimide-containing portion, the bonding step is a step of bonding the surface of the substrate A having a polyimide-containing portion to a surface of the substrate B having the second polyimide-containing portion.

[0060] By the bonding, electrode A on substrate A and electrode B on substrate B are electrically bonded. In one preferred aspect of the present invention, in the bonding step, the electrode included in the surface of substrate A having the polyimide-containing portion and the electrode on the surface of substrate B having the electrode are bonded so as to be in direct contact with each other. In other words, it is also preferable that neither electrode A nor electrode B has a conductive path.

[0061] The bonding is preferably carried out by a method including heating, and more preferably by a method including heating and pressure. The temperature during bonding (bonding temperature) is preferably 100°C or higher, more preferably 150°C or higher, and even more preferably 180°C or higher. The upper limit is preferably 450°C or lower, more preferably 400°C or lower, even more preferably 380°C or lower, particularly preferably 350°C or lower, even more preferably 300°C or lower, even more preferably 280°C or lower, even more preferably 260°C or lower, and even more preferably 250°C or lower. As described above, this temperature is preferably a temperature near the melting point of the conductive path, in consideration of melting the conductive path and enabling bonding between the electrodes. The heating time in the bonding step is not particularly limited, but is preferably 5 seconds or higher, more preferably 1 minute or higher, and even more preferably 2 minutes or higher. A practical upper limit is 30 minutes or lower. The heating environment is not particularly limited, but it is preferably carried out in a reduced pressure atmosphere while mechanically pressurizing the polyimide-containing portion. The atmospheric pressure was 1×10 －５ Preferably, it is 1×10 mbar or more. －４ More preferably, it is 5×10 mbar or more. －４ The upper limit is preferably 0.1 mbar or less, and more preferably 1 × 10 －２ More preferably, it is 5×10 mbar or less. －３ It is more preferable that the pressure is 100 mbar or less. In this specification, 1 bar is 100 kPa. The bonding is preferably performed by sandwiching two substrates (substrate A and substrate B), and it is preferable to apply pressure to the substrates at this time. The pressure applied to the substrates is preferably 1 kN or more, more preferably 5 kN or more, and even more preferably 10 kN or more. A practical upper limit is 100 kN or less. There are no particular restrictions on the equipment used in the bonding step, but equipment used for reflow of electronic components can be suitably used.

[0062] In addition, in the bonding step, it is also preferable that the temperature of substrate A having a polyimide-containing portion is preheated to 70°C or higher. Furthermore, when substrate B includes a second polyimide-containing portion, it is also preferable that the temperature of substrate B is preheated to 70°C or higher. The above temperature is preferably 70°C or higher, and more preferably 90°C or higher. Furthermore, the upper limit of the above temperature is not particularly limited, but is preferably 130°C or lower. The above embodiment can reduce the takt time of the bonding process. Furthermore, the fluidity of the polyimide-containing portion during bonding may be improved, which may increase the maximum peel resistance.

[0063] The thermal diffusivity of the polyimide-containing portion after the bonding process was 2.0×10 －７ m ２ s －１ It is preferable that the ratio is 3.0×10 or more. －７ m ２ s －１ More preferably, it is 5.0 × 10 or more. －７ m ２ s －１ The thermal diffusivity of the polyimide-containing portion after the bonding step can be adjusted, for example, by designing the filler material type, filler particle size (or a combination of particle sizes when two or more fillers are included) when the polyimide-containing portion after the bonding step contains a filler, the thermal diffusivity of the filler, the filler content, the polyimide structure, the thermal diffusivity of the polyimide, the polyimide content, etc. Fillers will be described later.

[0064] The polyimide-containing portion after the bonding step is preferably an insulating member. The insulating property (electrical resistance) of the polyimide-containing portion after the bonding step is not particularly limited, but it is preferred that the insulating property (electrical resistance) of the polyimide-containing portion after the bonding step is 1×10 or less in terms of volume resistivity. １５ It is preferable that the resistance is Ω cm or more, and 1×10 １６ It is more preferable that the resistivity is Ω cm or more. There is no particular upper limit, but it is preferably 1×10 １９In practice, the dielectric strength is Ω·cm or less. The breakdown voltage is preferably 1 kV / mm or more, and more preferably 10 kV / mm or more. There is no particular upper limit, but in practice, the dielectric strength is 1000 kV / mm or less. In this specification, the measurements of the volume resistivity and the breakdown voltage are in accordance with JIS C2151:2006 and JIS C2318:2007.

[0065] Furthermore, the glass transition temperature of the polyimide-containing portion after the bonding step is preferably 250° C. or lower, more preferably 230° C. or lower, and even more preferably 220° C. or lower. There is no particular limitation on the lower limit of the glass transition temperature, but it is preferably 120° C. or higher.

[0066] The preferred aspects of the thermal diffusivity, volume resistivity, breakdown voltage, and glass transition temperature of the second polyimide-containing portion after the bonding step are the same as those of the polyimide-containing portion after the bonding step described above.

[0067] The cyclization rate of the polyimide in the polyimide-containing portion-forming step (i.e., the cyclization rate after the heating step if the heating step is included) is preferably 90% or more, more preferably 92% or more, and even more preferably 95% or more. The upper limit of the imidization rate is not particularly limited, as long as it is 100% or less. The cyclization rate of the polyimide in the polyimide-containing portion formed at the bonded portion after the bonding step is preferably 91 to 100%, more preferably 94 to 100%, and even more preferably 97 to 100%. In the present invention, the imidization rate is a value calculated by the following method. The resin is dissolved in γ-butyrolactone, diluted to a viscosity of 2,000 mPa·s, and applied to a silicon wafer by spin coating to form a resin layer. If a resin layer cannot be formed due to reasons such as low solubility of the resin in γ-butyrolactone, the solvent may be changed to another solvent. As the other solvent, a solvent contained in the resin composition may be used, such as NMP. Furthermore, the viscosity may be appropriately changed within an adjustable range. The silicon wafer to which the resin layer was applied was dried on a hot plate at 110°C for 5 minutes, yielding a resin layer with a uniform thickness of approximately 15 μm after film formation on the silicon wafer. Here, if only a resin solution with low viscosity is obtained, making it difficult to obtain a resin layer with a thickness of 15 μm, the film thickness may be changed as appropriate. For example, if the film thickness is 5 μm or more, a similar imidization rate value can be obtained. The resin layer was measured by the ATR method using a NicoletiS20 (manufactured by Thermofisher) in the measurement range of 4000 to 700 cm. －１ , the measurement is performed 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) and 1500 cm －１ Around (1460-1550 cm －１The imidization index B is calculated in the same manner for a film that has been heated at a heating rate of 10°C / min in a nitrogen atmosphere and heated at 350°C for 1 hour, and the imidization rate of the resin is calculated by dividing the imidization index A by the imidization index B. The imidization rate of the resin is calculated by dividing the imidization index A by the imidization index B.

[0068] <Annealing Step> The annealing step is a heating step that may be incorporated after the bonding step (e.g., bonding using a flip-chip bonder). The annealing step can increase the peel resistance of the bonded portion. The heating means is not particularly limited, and heating devices such as a hot plate or an oven can be used. The heating temperature in the annealing step is preferably a temperature equal to or lower than the bonding temperature in the bonding step. The heating temperature in the annealing step is preferably 180 to 440°C, more preferably 200 to 350°C, and even more preferably 210 to 260°C. The heating temperature in the annealing step may also be determined taking into account the bonding temperature in the bonding step and the heating temperature in the heating step. The difference between the bonding temperature in the bonding step and the heating temperature in the annealing step (bonding temperature in the bonding step - heating temperature in the annealing step) is preferably 10°C or more. The upper limit is not particularly limited, but is preferably 250°C or less, and more preferably 200°C or less. When the above-mentioned heating step is performed, the heating temperature in the annealing step is preferably a temperature equal to or higher than the heating temperature in the above-mentioned heating step (maximum heating temperature). The difference between the heating temperature in the annealing step and the heating temperature in the heating step (heating temperature in the annealing step - heating temperature in the heating step) is preferably 10°C or higher, more preferably 30°C or higher. There is no particular upper limit, but for example, it is preferably 250°C or lower, more preferably 150°C or lower. The heating time in the annealing step is preferably equal to or longer than the bonding time in the bonding step. The heating time in the annealing step (heating time at the above heating temperature) is preferably 1 hour or higher. There is no particular upper limit, but it is preferably 10 hours or lower, more preferably 5 hours or lower. The difference between the heating time in the annealing step and the heating time in the bonding step (heating time in the annealing step - heating time in the bonding step) is preferably 30 minutes or higher. There is no particular upper limit, but it is preferably 10 hours or lower, more preferably 5 hours or lower. The heating atmosphere is air, N ２The ambient pressure can be appropriately selected from those available for heating equipment, such as under pressure or under vacuum. The atmospheric pressure is not particularly limited, but is preferably 1 atmosphere or less, and more preferably within 1 atmosphere ±0.1 atmosphere. 1 atmosphere means 101,325 Pa. For example, the annealing step can be performed under atmospheric pressure without applying pressure or vacuum. The imidization rate after the annealing step is preferably, for example, 98% or more. There is no particular upper limit, and it is preferably, for example, 100%.

[0069] [Other Steps] The method for producing a bonded body of the present invention does not preclude the inclusion of other steps between the steps defined above. While the bonding step has been described mainly as an example in which substrate A and substrate B are bonded face-to-face, a configuration in which a plurality of substrates B are arranged in parallel to substrate A and bonded to each other may also be used. Alternatively, a configuration in which substrates A and B having a suitable thickness are arranged side by side and their side surfaces are bonded to each other may also be used.

[0070] <Example of a Method for Manufacturing a Bonded Body> An example of a method for manufacturing a bonded body will be described below with reference to the drawings. FIG. 1 is a process explanatory diagram showing, in cross section, a process (part) for bonding substrates in a method for manufacturing a bonded body according to one embodiment of the present invention. First, a substrate A (base substrate) 1 is prepared, in which an electronic circuit region 8 is disposed on a silicon wafer 1x and an electrode 31 (electrode A) is attached thereto ( FIG. 1( a) ). An electronic circuit 81 made of a conductor or semiconductor is already formed within the electronic circuit region 8 of the substrate A1. The method for forming the electronic circuit is not particularly limited, and it can be formed by a conventional method. Furthermore, the structure and components of the electronic circuit are not particularly limited, and examples thereof include a transistor and a wiring structure that connects it to an electrode.

[0071] A resin composition is applied to the electrode-arranged surface (surface having an electronic circuit region) P0 of the substrate A1 to form a member (resin composition layer) 4 made of the resin composition (FIG. 1(b)). In this state, the resin composition layer may be heated and dried (drying step). After drying, the resin composition layer 4 may be patterned by photolithography, ion sputtering, or the like.

[0072] In this embodiment, the resin composition layer 4 is then heated to promote polymerization and, if necessary, cyclization, thereby hardening the polyimide to form the polyimide-containing portion 41 ( FIG. 21( c) ). This results in a polyimide-containing portion-disposed substrate 1y, in which the polyimide-containing portion 41 is disposed on the substrate A1. As in this example, the polyimide-containing portion 41 may shrink due to curing, compared to the resin composition layer 4. While the shrinkage is exaggerated somewhat in the drawing, the region without the electrode 31 shrinks more than the region with the electrode 31 because the resin composition layer is thicker than the region with the electrode 31, resulting in a decrease in the surface flatness of the polyimide-containing portion 41. The resin composition of the present invention suppresses this shrinkage compared to conventional compositions with a low imidization rate of polyimide, thereby improving the surface flatness. Furthermore, while the substrate A shown in the drawing only has an electrode 31 as the electrode A, a conductive path may be formed on the electrode 31. The conductive path may be formed in the substrate A from the beginning, or the polyimide-containing portion may be patterned before curing, and the conductive path may be formed in the patterned region by plating or other methods.

[0073] In the polyimide-containing portion-disposed substrate 1y of this embodiment, the heights h1 and h2 of the electrodes 31 vary. Furthermore, the surface 4a of the polyimide-containing portion is also wavy and not flat due to the shrinkage and other factors associated with the imidization described above. In a preferred aspect of this embodiment, planarization is performed to eliminate such variations in the height of the electrodes 31, expose their tip surfaces, and flatten the surface of the polyimide-containing portion. It is believed that this planarization improves the adhesion of the substrate. It is also believed that the bonding strength between electrodes is improved without forming conductive paths.

[0074] 2(a) to 2(c) each show a polyimide-containing portion-containing substrate (laminate) 1z after planarization. Tips 31a of electrodes 31 are exposed on surface 4b of the polyimide-containing portion, and the entire surface 4b of the polyimide-containing portion is planarized. Fig. 2(a) shows an example in which the height of electrode 31 and polyimide-containing surface 4b are the same. Fig. 2(b) shows an example in which the height of polyimide-containing surface 4b is lower than that of electrode 31. Fig. 2(c) shows an example in which the height of polyimide-containing surface 4b is higher than that of electrode 31.

[0075] Substrate B2 is prepared separately from the laminate (planarized polyimide-containing portion-containing substrate) 1z (FIG. 3(a)). Substrate B2 includes a silicon wafer 2x having a through-hole electrode 2y, a circuit wiring region 8 having circuit wiring 81 disposed thereon, and an electrode 32 (electrode B) formed within the circuit wiring region 8. In this embodiment, a second polyimide-containing portion 42 is also formed on the surface of substrate B having electrode B, and its surface 2a is planarized similarly to the surface of polyimide-containing portion 41 in substrate A. The formation and planarization of the second polyimide-containing portion 42 can be performed by the same method as the formation and planarization of polyimide-containing portion 41. Since the surfaces of the polyimide-containing portion 41 and electrode 31 of substrate A and the surfaces of the second polyimide-containing portion 42 and electrode 32 of substrate B are both planarized in this manner, electrical connectivity is improved even in the absence of a conductive path as in the embodiment shown in this figure. At this time, the electrode 31 of the laminate is aligned (positioned) so that it comes into contact with the electrode 32 provided on substrate B2. Here, if at least one of the polyimide-containing portion 41 and the second polyimide-containing portion 42 contains a migration inhibitor, even if misalignment occurs, migration of metal from the electrode 31 (electrode 32) to the polyimide-containing portion 41 (second polyimide-containing portion 42) can be suppressed, thereby improving voltage resistance performance. A conductive path may also be formed on the electrode 32 in the electrode B. The conductive path may be formed in the substrate B from the beginning, or the second polyimide-containing portion may be patterned before curing, and the conductive path may be formed in the patterned portion by plating or the like.

[0076] Next, in this embodiment, the aligned substrate B2 and the laminate 1z are bonded by abutting them at the bonding surface P1 via the polyimide-containing portion 41 and the second polyimide-containing portion 42 ( FIG. 3( b) ). This forms a bonded body 100 in which the two substrates are bonded. In the bonded body 100, the electrode 31 and the electrode 32 are electrically bonded (bonding step). At the same time, the polyimide-containing portion 41 is softened by heating, and the polyimide-containing portion surface 4b of the laminate 1z is bonded to the surface 2a of the substrate B (the planarized surface of the second polyimide-containing portion 42), thereby forming the bonded body 100. In the bonded body 100, a polyimide-containing portion 51 including the polyimide-containing portion after the bonding step and the second polyimide-containing portion after the bonding step is formed from the polyimide-containing portion 41 and the second polyimide-containing portion 42.

[0077] In a preferred embodiment of the present invention, the polyimide-containing surface 4b and the second polyimide-containing surface 2a of the laminate 1z have high flatness, so that a dense and accurate contact state with the substrate B2 can be achieved at the contact surface. By achieving a denser and more accurate contact state, voids that tend to occur at the contact surface can be effectively suppressed.

[0078] Each component contained in the resin composition of the present invention will be described in detail below. The resin composition of the present invention contains a specific resin. The resin composition of the present invention preferably further contains a polymerizable compound and a polymerization initiator. According to this embodiment, the hardness of the cured product at room temperature (e.g., 10°C to 40°C) is increased, making it easier to polish by CMP polishing. Furthermore, compared to when polyimide is used alone, the inclusion of a polymerizable compound and a polymerization initiator further softens the film at high temperatures, making bonding easier and improving the adhesion of the bonded parts. Preferred embodiments of the polymerizable compound and polymerization initiator will be described below.

[0079] <Specific Resin> The resin composition of the present invention contains a polyimide resin (specific resin) having an imidization rate of 80% or more.

[0080] In the present invention, polyimide refers to a resin having a repeating unit containing an imide group in the molecular chain, and is preferably a resin having a repeating unit containing an imide ring structure in the molecular chain. Furthermore, when the polyimide is a linear resin, the polyimide is preferably a resin having a repeating unit containing an imide group in the main chain, and more preferably a resin having a repeating unit containing an imide ring structure in the main chain. In this specification, the term "main chain" refers to the relatively longest bonding chain in the resin molecule, and the term "side chain" refers to other bonding chains. In this specification, the term "imide group" refers to a structure represented by *-C(=O)N(-*)C(=O)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, and more preferably a bonding site to a quaternary carbon atom. In this specification, the term "imide ring structure" refers to a ring structure containing two carbon atoms and all of the nitrogen atoms in the imide as ring members. The imide ring structure is preferably a five-membered ring. The polyimide may be a so-called polyamideimide, which has amide groups in the molecular chain in addition to imide groups. In this specification, an amide group refers to a structure represented by *-C(=O)N(-#)-*, where * represents a bonding site to another structure, preferably a bonding site to a carbon atom, more preferably a bonding site to a quaternary carbon atom, and # represents a bonding site to another structure, preferably a bonding site to a hydrogen atom or a carbon atom, more preferably a bonding site to a hydrogen atom.

[0081] The imidization rate of the specific resin is 80% or more, and from the viewpoint of surface flatness, it is preferably 85% or more, more preferably 90% or more, and even more preferably 95% or more. The upper limit of the imidization rate is not particularly limited as long as it is 100% or less. A higher imidization rate tends to result in better surface flatness. The method for measuring the imidization rate is as described above. In measuring the imidization rate, the resin whose imidization rate is to be measured can be obtained from the composition by, for example, the following method. A solution of 1 g of the composition and 2 g of tetrahydrofuran is added to 50 g of methanol or water to cause crystallization, and the resin is precipitated and filtered. The residue is recovered and dissolved in 3.0 g of THF (tetrahydrofuran), and this is added to 50 g of methanol or water to cause crystallization, filtered, and dried at 40°C for 20 hours to obtain a resin.

[0082] The specific resin preferably has a polymerizable group, and more preferably contains a radically polymerizable group. When the specific resin contains a polymerizable group, the room temperature modulus of the resulting cured product increases, which tends to increase the polishing rate in CMP. Furthermore, when the specific resin contains a polymerizable group, the amount of components volatilizing from the cured product decreases, resulting in a cured product with excellent surface flatness. When the specific resin contains a radically polymerizable group, the resin composition of the present invention preferably contains a radical polymerization initiator as a polymerization initiator. Furthermore, from the viewpoint of resolution, it is also preferable to contain both a radical polymerization initiator and a radical crosslinking agent. Furthermore, if necessary, a sensitizer can be contained in these embodiments. For example, a negative-tone photosensitive film can be formed from such a resin composition.

[0083] The specific resin preferably contains a repeating unit represented by the following formula (1-1). In formula (1-1), X １ is a tetravalent organic group, and Y １ is a divalent organic group.

[0084] -X １ - In formula (1-1), X １ The number of carbon atoms in the group is preferably 4 or more, more preferably 4 to 50, and even more preferably 6 to 40.

[0085] In addition, in formula (1-1), X １ preferably includes a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of the following formulas (V-1) to (V-10), and more preferably includes a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1), (V-2), (V-3), (V-5), or (V-8). In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure. In formula (V-4), n1 represents an integer of 1 or more. In formula (V-8), R Ｘ５ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group.

[0086] In formula (V-2), R Ｘ１ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. The halogen atom is preferably F or Cl, and more preferably F. In formula (V-3), R Ｘ２ and R Ｘ３ are each preferably independently a hydrogen atom. Ｘ２ and R Ｘ３ When R Ｘ２ and R Ｘ３ The structure formed by bonding is a single bond, —O— or —C(R) ２ - is preferred, and -O- or -C(R) ２R represents a hydrogen atom or a monovalent organic group, preferably a hydrogen atom, an alkyl group, or an aryl group, and more preferably a hydrogen atom. In formula (V-4), n1 is preferably an integer of 1 to 5, more preferably an integer of 1 to 3, still more preferably 1 or 2, and particularly preferably 1. In formula (V-8), R Ｘ５ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group has been substituted with a halogen atom. As the halogen atom, F or Cl is preferred, and F is more preferred.

[0087] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-1), X １ is preferably a group represented by the following formula (V-1-1): １ represents bonding sites with the four carbonyl groups to which n1 is bonded, and n1 represents an integer of 0 to 5, and is also preferably an integer of 1 to 5. Furthermore, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0088] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-2), X １ is preferably a group represented by the following formula (V-2-1): In this specification, a bond crossing a side of a ring structure means that it substitutes one of the hydrogen atoms in the ring structure. Ｘ１ represents a single bond or —O—, and * represents X in formula (1-1). １ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ１ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0089] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-3), X １ is preferably a group represented by the following formula (V-3-1) or formula (V-3-2), and from the viewpoint of reducing the dielectric constant of the cured product, is preferably a group represented by formula (V-3-2). In the following formulas, * represents X in formula (1-1). １ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ２ and R Ｘ３ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with known substituents such as hydrocarbon groups.

[0090] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-4), X １ is preferably a group represented by the following formula (V-4-1): In the following formula (V-4-1), * represents X in formula (1-1). １ represents the bonding sites with the four carbonyl groups to which n is bonded, and n1 represents an integer of 1 to 5. Furthermore, the hydrogen atoms in formula (V-4-1) may be further substituted with known substituents such as hydrocarbon groups. Examples of known substituents include alkyl groups, halogenated alkyl groups, and halogen atoms. However, it is also preferable that none of the hydrogen atoms in the structure represented by (V-4-1) are substituted.

[0091] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-5), X １ is preferably a group represented by the following formula (V-5-1): In the following formula, * represents X in formula (1-1). １represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. Furthermore, the hydrogen atoms in formula (V-5-1) may be further substituted with known substituents such as hydrocarbon groups. Examples of known substituents include alkyl groups, halogenated alkyl groups, and halogen atoms. However, it is also preferable that none of the hydrogen atoms in the structure represented by (V-5-1) are substituted.

[0092] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-6), X １ is preferably a group represented by the following formula (V-6-1): In the following formula, * represents X in formula (1-1). １ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0093] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-7), X １ is preferably a group represented by the following formula (V-7-1): In the following formula, * represents X in formula (1-1). １ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0094] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-8), X １ is preferably a group represented by the following formula (V-8-1): In the following formula, * represents X in formula (1-1). １ represents the bonding site with the four carbonyl groups to which R is bonded. Ｘ５ The definition and preferred embodiments of are as described above. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0095] X １is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-9), X １ is preferably a group represented by the following formula (V-9-1): In the following formula, * represents X in formula (1-1). １ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0096] X １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (V-10), X １ is preferably a group represented by the following formula (V-10-1): In the following formula, * represents X in formula (1-1). １ represents the bonding sites with the four carbonyl groups to which the carbonyl groups are bonded. In addition, the hydrogen atoms in the following structures may be further substituted with known substituents such as hydrocarbon groups.

[0097] In addition, in formula (1-1), X １ is preferably any one of the structures represented by the following formulas (2a) to (2g). In formulas (2a) to (2g), L １ and L ２ are each independently a divalent group that is not conjugated with the benzene ring to which it is bonded, or a single bond, and *1 to *4 each represent a bonding site with the carbonyl group described in formula (1-2), and the hydrogen atoms in these structures may be substituted with substituents.

[0098] In formula (2c), L １ and L ２ are each independently —CH ２- or -O- is preferred. The hydrogen atoms in formulas (2a) to (2g) may be substituted with a substituent, and examples of the substituent include an alkyl group, a halogenated alkyl group, etc., and an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms is preferred, with a methyl group or a trifluoromethyl group being more preferred. A halogenated alkyl group refers to a group in which at least one hydrogen atom of an alkyl group is substituted with a halogen atom. As the halogen atom, F or Cl is preferred, and F is more preferred.

[0099] Other, X １ may be a tetracarboxylic acid residue remaining after removal of the anhydride group from a tetracarboxylic acid dianhydride described in paragraphs 0055 to 0057 of JP-A No. 2023-003421.

[0100] Also, X １ It is preferable that X does not contain an imide bond in the structure. １ In the present invention, the urethane bond is *—O—C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom or an alkyl group, and even more preferably a hydrogen atom. Ｎ —C(═O)—NR Ｎ - is a bond represented by *, and R Ｎ R each independently represents a hydrogen atom or a monovalent organic group, and * represents a bonding site with a carbon atom. Ｎ The preferred embodiments of X are as described above. １ It is preferable that X does not contain an ester bond in its structure. In the present invention, the ester bond is a bond represented by *--O--C(=O)--*. Among these, X １It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0101] -Y １ - In formula (1-1), Y １ The number of carbon atoms in the group is preferably 4 or more, more preferably 4 to 50, and even more preferably 6 to 40.

[0102] In formula (1-1), Y １ Preferably, the ethylenically unsaturated group has a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloxy group, a maleimide group, and a (meth)acrylamide group. From the viewpoint of reactivity, a (meth)acryloxy group is preferred, and from the viewpoint of reducing the dielectric loss tangent of the film, a vinylphenyl group or a maleimide group is preferred.

[0103] In formula (1-1), Y １ is preferably a structure containing a structure represented by formula (C-1) to formula (C-5). In formula (C-1), R １ each independently represents a hydrogen atom or a monovalent organic group; L Ｃ represents a single bond or —O—, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ Each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １ each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, and * represents a bonding site with another structure. １each independently represents a hydrogen atom or a monovalent organic group, n1 represents an integer of 0 to 3, n2 represents an integer of 0 to 3, R ２ each independently represents an alkyl group or a fluoroalkyl group, and * represents a bonding site to another structure.

[0104] In formula (C-1), R １ are each independently preferably an alkyl group or a halogenated alkyl group, more preferably an alkyl group having 1 to 4 carbon atoms or a halogenated alkyl group having 1 to 4 carbon atoms, and even more preferably a methyl group or a trifluoromethyl group. The halogen atom in the halogenated alkyl group is preferably F or Cl, more preferably F. In addition, in formula (C-1), R １ It is also preferred that each independently represents a group represented by formula (RP-1) described below. Ｃ is preferably —O—. In formula (C-1), n1 is preferably 0 or 1, and more preferably 1. In formula (C-1), n2 is preferably 0 or 1, and more preferably 1.

[0105] In formula (C-2), R １ Preferred embodiments of n1 and n2 are each R １ In formula (C-2), R ２ are each independently preferably an alkyl group having 1 to 4 carbon atoms or a fluoroalkyl group having 1 to 4 carbon atoms, more preferably a methyl group or a trifluoromethyl group.

[0106] In formula (C-3), R １ and n1 are each preferably represented by R １ and n1 are the same as the preferred embodiments.

[0107] In formula (C-4), R １ and n1 are each preferably represented by R １ and n1 are the same as the preferred embodiments.

[0108] In formula (C-5), R １ , R ２ Preferred embodiments of n1 and n2 are each R １, R ２ , n1 and n2 are the same as the preferred embodiments.

[0109] In formulae (C-1) to (C-5), each * is preferably a bonding site to a nitrogen atom.

[0110] Also, Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (C-1), Y １ is preferably a group represented by the following formula (C-1-2) or formula (C-1-3). In the following formulas, * represents a bonding site with the nitrogen atom, and n1 represents an integer of 0 to 5. An embodiment in which n1 is 0 is also one of the preferred embodiments of the present invention. Furthermore, the hydrogen atom in the following structure may be further substituted with a group represented by formula (RP-1) described below or a known substituent such as a hydrocarbon group. Examples of known substituents include an alkyl group, a halogenated alkyl group, and a halogen atom.

[0111] Also, Y １ is a group containing a structure in which two or more hydrogen atoms have been removed from the structure represented by formula (C-2), Y １ is preferably a group represented by the following formula (C-2-3) or formula (C-2-4), and from the viewpoint of reducing the dielectric constant of the cured product, it is preferably a group represented by formula (C-2-4). Ｘ１ represents a single bond or —O—, and * represents the bonding site with the nitrogen atom. ２ The definitions and preferred embodiments of are as described above. In addition, the hydrogen atoms in these structures may be further substituted with a group represented by formula (RP-1) described below or a known substituent such as a hydrocarbon group.

[0112] [Group represented by formula (RP-1)] In formulas (C-1) to (C-5), R １ are also preferably each independently a group represented by formula (RP-1). In formula (RP-1), L １ represents a 1+1-valent linking group, A １represents a polymerizable group, a1 represents an integer of 1 or more, and * represents a bonding site with a carbon atom in formulae (C-1) to (C-5).

[0113] In formula (RP-1), L １ is preferably a group represented by the following formula (L-2). In formula (L-2), Z ２ -O-, -NR Ｎ -, -C(=O)O- or -C(=O)NR Ｎ represents -, and R Ｎ represents a hydrogen atom or a monovalent organic group; when a1 is 1, L ｘ represents a single bond or a divalent linking group, and when a1 is 2 or more, L ｘ represents a linking group having a valence of a1+1, a1 represents an integer of 1 or more, * represents a bonding site with a carbon atom in formulas (C-1) to (C-5), and # represents A in formula (RP-1). １ represents the binding site with

[0114] In formula (L-2), Z ２ is preferably —O— or —C(═O)O—. ２ Ga-NR Ｎ -, then R Ｎ is preferably a hydrogen atom or a hydrocarbon group, more preferably a hydrogen atom, an alkyl group or a phenyl group, and still more preferably a hydrogen atom. ｘ is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, even more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group. ｘ is preferably a hydrocarbon group, a heterocyclic group, or a group represented by a combination thereof, more preferably a saturated aliphatic hydrocarbon group having 2 to 20 carbon atoms, and even more preferably a saturated aliphatic hydrocarbon group having 3 to 15 carbon atoms. In formula (L-2), a1 has the same meaning as a1 in formula (RP-1).

[0115] In formula (RP-1), A １represents a polymerizable group. Preferred embodiments of the polymerizable group are the same as the preferred embodiments of the polymerizable group contained in the specific resin described above.

[0116] Among these, A １ is preferably a vinylphenyl group, a (meth)acryloxy group, a vinyl ether group, a maleimide group, an allyl group, or a group containing these, and more preferably a maleimide group, a (meth)acryloxy group, a (meth)acrylamide group, or a vinylphenyl group. In particular, from the viewpoint of reactivity, a (meth)acryloxy group is preferred. Furthermore, from the viewpoint of reducing the dielectric loss tangent of the cured product, a maleimide group or a vinylphenyl group is preferred. In particular, A in formula (RP-1) contained in formula (2) １ At least one of the groups is preferably a vinylphenyl group, a (meth)acryloxy group, a vinyl ether group, a maleimide group, an allyl group, an epoxy group, or a group containing any of these, more preferably a maleimide group, a (meth)acryloxy group, a (meth)acrylamide group, or a vinylphenyl group, and even more preferably a vinylphenyl group.

[0117] Among these, A in formula (RP-1) １ is a vinylphenyl group, and L １ is preferably a group represented by formula (L-2-1). In formula (L-2-1), L Ｘ２ represents a hydrocarbon group, a1 represents an integer of 1 or more, * represents a bonding site with a carbon atom in formulas (C-1) to (C-5), and # represents A in formula (RP-1). １ In formula (L-2-1), L Ｘ２ is preferably an aliphatic saturated hydrocarbon group. Ｘ２ is preferably an alkylene group, more preferably an alkylene group having 1 to 10 carbon atoms, still more preferably an alkylene group having 1 to 4 carbon atoms, and particularly preferably a methylene group. In formula (L-2-1), a1 has the same meaning as a1 in formula (RP-1).

[0118] In addition, A in formula (RP-1) １ is a maleimide group, and L １is a group represented by formula (L-2), and L in formula (L-2) Ｘ is preferably an aromatic group or an aliphatic saturated hydrocarbon group having 4 or more carbon atoms. The aromatic group may be either an aromatic hydrocarbon group or an aromatic heterocyclic group, but is preferably an aromatic hydrocarbon group. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, more preferably an aromatic hydrocarbon group having 6 carbon atoms. Examples of heteroatoms in the aromatic heterocyclic group include an oxygen atom, a nitrogen atom, and a sulfur atom. The number of heteroatoms in the aromatic heterocyclic group is preferably 1 or 2. Furthermore, the aromatic heterocyclic group is preferably a 5- or 6-membered ring containing the above heteroatom. Furthermore, the aromatic heterocyclic group may be condensed with another aromatic heterocyclic group or another aromatic hydrocarbon ring group. The aliphatic saturated hydrocarbon group having 4 or more carbon atoms may be linear, branched, cyclic, or have a structure represented by a combination thereof. The number of carbon atoms in the aliphatic saturated hydrocarbon group having 4 or more carbon atoms is preferably 4 to 20, more preferably 5 to 10.

[0119] In formula (RP-1), a1 is preferably an integer of 1 to 4, and more preferably an integer of 1 or 2. An embodiment in which a1 is 1 is also one of the preferred embodiments of the present invention.

[0120] The number of ester bonds contained in formula (RP-1) is preferably 1 or 0.

[0121] Others, Y １ may be a group described in paragraphs 0042 to 0053 of JP-A No. 2023-003421. １ It is preferable that Y does not contain an imide bond in the structure. １ It is preferable that Y does not contain a urethane bond, a urea bond, or an amide bond in the structure. １ It is preferable that Y does not contain an ester bond in the structure. １ It is preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, or an amide bond, and it is more preferable that the copolymer does not contain an imide bond, a urethane bond, a urea bond, an amide bond, or an ester bond.

[0122] The specific resin may further contain at least one repeating unit selected from the group consisting of a repeating unit represented by formula (1-2), a repeating unit represented by formula (1-3), and a repeating unit represented by formula (1-4). In formula (1-2), A ２ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ２ is a hydrogen atom or a monovalent organic group, and X ２ is a tetravalent organic group, and Y ２ is a divalent organic group. ３ is -O- or -NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ３ is a hydrogen atom or a monovalent organic group, and X ３ is a tetravalent organic group, and Y ３ is a divalent organic group. ４１ and A ４２ are each independently —O— or —NR Ｚ - and R Ｚ is a hydrogen atom or a monovalent organic group, and R ４１ and R ４２ are each independently a hydrogen atom or a monovalent organic group, and X ４ is a tetravalent organic group, and Y ４ is a divalent organic group.

[0123] -A ２ - A in formula (1-2) ２ is —O— or —NR ｚ -, and -O- is preferred. ｚ represents a hydrogen atom or a monovalent organic group, and is preferably a hydrogen atom.

[0124] -R ２ R in formula (1-2) ２ represents a hydrogen atom or a monovalent organic group. The monovalent organic group preferably contains a linear or branched alkyl group, a cyclic alkyl group, an aromatic group, or a polyalkyleneoxy group. ２It is preferable that the specific resin contains a polymerizable group. The polymerizable group is a group capable of undergoing a crosslinking reaction by the action of heat, radicals, or the like, and a radically polymerizable group is preferable. Specific examples of the polymerizable group include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. The radically polymerizable group contained in the specific resin is preferably a group having an ethylenically unsaturated bond. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, a (meth)acryloyloxy group, and a group represented by the following formula (III), and a group represented by the following formula (III) is preferable.

[0125]

[0126] In formula (III), R ２００ represents a hydrogen atom, a methyl group, an ethyl group, or a methylol group, and is preferably a hydrogen atom or a methyl group. In formula (III), * represents a bonding site with another structure. In formula (III), R ２０１ represents an alkylene group having 2 to 12 carbon atoms, —CH ２ CH(OH)CH ２ -, a cycloalkylene group or a polyalkyleneoxy group. ２０１ Examples of the alkylene group include an ethylene group, a propylene group, a trimethylene group, a tetramethylene group, a pentamethylene group, a hexamethylene group, an octamethylene group, and a dodecamethylene group; a 1,2-butanediyl group, a 1,3-butanediyl group; a —CH ２ CH(OH)CH ２ alkylene groups such as ethylene and propylene; ２ CH(OH)CH ２More preferred are alkylene groups such as ethylene and propylene, or polyalkyleneoxy groups. In the present invention, a polyalkyleneoxy group refers to a group in which two or more alkyleneoxy groups are directly bonded. The alkylene groups in the multiple alkyleneoxy groups contained in the polyalkyleneoxy group may be the same or different. When a polyalkyleneoxy group contains multiple alkyleneoxy groups with different alkylene groups, the arrangement of the alkyleneoxy groups in the polyalkyleneoxy group may be a random arrangement, a block arrangement, or an arrangement having an alternating pattern. The number of carbon atoms in the alkylene group (including the number of carbon atoms in the substituent if the alkylene group has a substituent) is preferably 2 or more, more preferably 2 to 10, even more preferably 2 to 6, even more preferably 2 to 5, even more preferably 2 to 4, even more preferably 2 or 3, and particularly preferably 2. The alkylene group may also have a substituent. Preferred substituents include alkyl groups, aryl groups, and halogen atoms. The number of alkyleneoxy groups contained in the polyalkyleneoxy group (the number of repeating polyalkyleneoxy groups) is preferably 2 to 20, more preferably 2 to 10, and even more preferably 2 to 6. From the viewpoint of solvent solubility and solvent resistance, the polyalkyleneoxy group is preferably a polyethyleneoxy group, a polypropyleneoxy group, a polytrimethyleneoxy group, a polytetramethyleneoxy group, or a group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, more preferably a polyethyleneoxy group or a polypropyleneoxy group, and even more preferably a polyethyleneoxy group. In the group in which multiple ethyleneoxy groups and multiple propyleneoxy groups are bonded, the ethyleneoxy groups and propyleneoxy groups may be arranged randomly, in blocks, or in an alternating pattern. The preferred embodiments of the number of repeating ethyleneoxy groups and the like in these groups are as described above.

[0127] In formula (1-2), R ２is a hydrogen atom, the specific resin may form a counter salt with a tertiary amine compound having an ethylenically unsaturated bond. An example of such a tertiary amine compound having an ethylenically unsaturated bond is N,N-dimethylaminopropyl methacrylate.

[0128] -X ２ and Y ２ - In formula (1-2), X ２ and Y ２ A preferred embodiment of the formula is X １ and Y １ However, the preferred embodiments of X are the same as those of １ and Y １ In the explanation of the formula (1-1), the expression "formula (1-1)" should be read as "formula (1-2)".

[0129] -A ３ , R ３ , X ３ , Y ３ A in formula (1-3) ３ and R ３ A preferred embodiment of the formula (1-2) is ２ and R ２ However, the same as the preferred embodiment of A ２ and R ２ In the explanation of the formula (1-2), the description of "formula (1-2)" should be read as "formula (1-3)". X in the formula (1-3) ３ and Y ３ A preferred embodiment of the formula is X １ and Y １ However, the preferred embodiments of X are the same as those of １ and Y １ In the explanation of the formula (1-1), the expression "formula (1-1)" should be read as "formula (1-3)".

[0130] -A ４１ , A ４２ , R ４１ , R ４２ , X ４ , Y ４ A in formula (1-4) ４１ and A ４２ A preferred embodiment of each of the above is A in formula (1-2). ２However, the same as the preferred embodiment of A ２ The description of "formula (1-2)" in the explanation of formula (1-4) should be read as "formula (1-4)". ４１ and R ４２ Preferred embodiments of the formula (1-2) are: ２ However, the preferred embodiments are the same as those of the above. ２ In the explanation of the formula (1-2), the description of "formula (1-2)" should be read as "formula (1-4)". X in the formula (1-4) ４ and Y ４ A preferred embodiment of the formula is X １ and Y １ However, the preferred embodiments of X are the same as those of １ and Y １ In the explanation of the formula (1-1), the expression "formula (1-1)" should be read as "formula (1-4)".

[0131] The specific resin preferably contains the following repeating unit A-1, and may contain, in addition to the following repeating unit A-1, at least one repeating unit selected from the group consisting of the following repeating unit A-2, repeating unit A-3, and repeating unit A-4. Repeating unit A-1: ​​A repeating unit represented by formula (1-1), wherein X １ Repeating unit A-2: A repeating unit represented by formula (1-2), wherein X ２ Repeating unit A-3: A repeating unit represented by formula (1-3), wherein X is a repeating unit having a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10). ３ Repeating unit A-4: A repeating unit represented by formula (1-4), wherein X is a repeating unit having a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10). ４ a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1) to (V-10):

[0132] The repeating unit A-1 is a repeating unit represented by formula (1-1), and X １is preferably a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1), (V-2), (V-3), (V-5), and (V-8). ２ is preferably a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1), (V-2), (V-3), (V-5), and (V-8). Repeating unit A-3 is a repeating unit represented by formula (1-3), in which X ３ is preferably a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formulas (V-1), (V-2), (V-3), (V-5), and (V-8). Repeating unit A-4 is a repeating unit represented by formula (1-4), in which X ４ is preferably a repeating unit containing a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formula (V-1), formula (V-2), formula (V-3), formula (V-5), and formula (V-8).

[0133] In one embodiment of the specific resin of the present invention, the total content of repeating units represented by formula (1-1), formula (1-2), formula (1-3), or formula (1-4) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units represented by formula (1-1), formula (1-2), formula (1-3), or formula (1-4).

[0134] Another embodiment of the specific resin of the present invention is one in which the total content of repeating units represented by formula (1-1) is 50 mol% or more of all repeating units. The total content is more preferably 70 mol% or more, even more preferably 90 mol% or more, and particularly preferably more than 90 mol%. The upper limit of the total content is not particularly limited, and all repeating units in the specific resin except for the terminal repeating units may be repeating units represented by formula (1-1).

[0135] Furthermore, in the specific resin of the present invention, the total content of repeating units corresponding to repeating unit A-1, repeating unit A-2, repeating unit A-3, or repeating unit A-4 (also referred to as "repeating unit A") is preferably 50 mol% or more of all repeating units. The total content is more preferably 60 mol% or more, even more preferably 70 mol% or more, and particularly preferably 80 mol% or more. There is no particular upper limit to the total content, and all repeating units in the specific resin except for the terminal repeating units may be repeating units A.

[0136] The weight average molecular weight (Mw) of the specific resin is preferably 120,000 or less, more preferably 50,000 or less, and even more preferably less than 40,000. Furthermore, the Mw is preferably 5,000 or more, more preferably 10,000 or more, and even more preferably 15,000 or more. The number average molecular weight (Mn) of the specific resin is preferably 40,000 or less, more preferably 30,000 or less, and even more preferably 20,000 or less. Furthermore, the Mn is preferably 2,000 or more, more preferably 3,000 or more, and even more preferably 4,000 or more. The molecular weight dispersity of the specific resin is preferably 1.5 or more, more preferably 1.8 or more, and even more preferably 2.0 or more. The upper limit of the molecular weight dispersity of the specific resin is not particularly specified, but is, for example, preferably 7.0 or less, more preferably 6.5 or less, and even more preferably 6.0 or less. In this specification, the molecular weight dispersity is a value calculated by weight average molecular weight / number average molecular weight. When the resin composition contains multiple specific resins as specific resins, it is preferable that the weight average molecular weight, number average molecular weight, and dispersity of at least one specific resin are within the above ranges. It is also preferable that the weight average molecular weight, number average molecular weight, and dispersity calculated by treating the multiple specific resins as one resin are each within the above ranges.

[0137] [Acid Value] The acid value of the polyimide is preferably 1 to 35 mgKOH / g, more preferably 2 to 30 mgKOH / g, and even more preferably 5 to 20 mgKOH / g. The acid value is measured by a known method, for example, the method described in JIS K 0070:1992. From the viewpoint of achieving both storage stability and developability, the acid group contained in the polyimide preferably has a pKa of 0 to 10, more preferably 3 to 8. pKa is the equilibrium constant Ka of a dissociation reaction in which a hydrogen ion is released from an acid, expressed as its negative common logarithm pKa. In this specification, unless otherwise specified, pKa is a value calculated using ACD / ChemSketch (registered trademark). For pKa, reference may be made to the values ​​listed in "Revised 5th Edition Chemistry Handbook, Basics" edited by the Chemical Society of Japan. When the acid group is a polyvalent acid such as phosphoric acid, the pKa is the first dissociation constant. As such an acid group, the polyimide preferably contains at least one selected from the group consisting of a carboxy group and a phenolic hydroxy group, and more preferably contains a phenolic hydroxy group.

[0138] [Method for producing specific resin] The specific resin can be produced, for example, by the method described in paragraphs 0134 to 0136 of WO 2022 / 145355. The above description is incorporated herein by reference. Alternatively, the specific resin can be synthesized by referring to other known methods.

[0139] [Content] The content of the specific resin in the resin composition of the present invention is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, and even more preferably 50% by mass or more, based on the total solid content of the resin composition. Furthermore, the content of the resin in the resin composition of the present invention is preferably 99.5% by mass or less, more preferably 99% by mass or less, even more preferably 98% by mass or less, even more preferably 97% by mass or less, and even more preferably 95% by mass or less, based on the total solid content of the resin composition. The resin composition of the present invention may contain only one type of specific resin, or may contain two or more types. When two or more types are contained, the total amount is preferably within the above range.

[0140] It is also preferable that the resin composition of the present invention contains at least two types of resins. Specifically, the resin composition of the present invention may contain a total of two or more types of the specific resin and the other resin described below, or may contain two or more types of specific resins, but it is preferable that the resin composition of the present invention contains two or more types of specific resins. When the resin composition of the present invention contains two or more types of specific resins, for example, it is preferable that the resin composition contains two or more types of polyimides having different dianhydride-derived structures.

[0141] <Other Resins> The resin composition of the present invention may contain the above-described specific resin and another resin (hereinafter simply referred to as "other resin") different from the specific resin. Examples of other resins include polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, phenolic resins, polyamides, epoxy resins, polysiloxanes, resins containing a siloxane structure, (meth)acrylic resins, (meth)acrylamide resins, urethane resins, butyral resins, styryl resins, polyether resins, and polyester resins. For example, by further adding a (meth)acrylic resin, a resin composition with excellent coatability can be obtained, and a pattern (cured product) with excellent solvent resistance can be obtained. For example, instead of or in addition to the polymerizable compound described below, a polymerizable compound having a high polymerizable group value and a weight average molecular weight of 20,000 or less (for example, a polymerizable group content of 1×10 per 1 g of resin) can be used. －３ By adding a (meth)acrylic resin (having a molecular weight of 1000 to 1000 mol / g or more) to the resin composition, it is possible to improve the coatability of the resin composition and the solvent resistance of the pattern (cured product).

[0142] When the resin composition of the present invention contains other resins, the content of the other resins is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, even more preferably 1% by mass or more, even more preferably 2% by mass or more, even more preferably 5% by mass or more, and even more preferably 10% by mass or more, based on the total solid content of the resin composition. When the resin composition of the present invention contains other resins, the content of the other resins is preferably 80% by mass or less, more preferably 75% by mass or less, even more preferably 70% by mass or less, even more preferably 60% by mass or less, and even more preferably 50% by mass or less, based on the total solid content of the resin composition. A preferred embodiment of the resin composition of the present invention may also be an embodiment in which the content of the other resin is low. In the above embodiment, the content of the other resin is preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably 1% by mass or less, based on the total solid content of the resin composition. The lower limit of the content is not particularly limited, as long as it is 0% by mass or more. The resin composition of the present invention may contain only one type of other resin, or may contain two or more types. When two or more types are contained, the total amount is preferably in the above range.

[0143] <Polymerizable Compound> The resin composition of the present invention preferably contains a polymerizable compound. By containing a polymerizable compound, the room temperature elastic modulus of the cured product increases, and the removal rate in CMP tends to increase. Furthermore, by containing a polymerizable compound, the amount of volatile components is reduced, which is thought to result in a cured product with excellent flatness.

[0144] In particular, the resin composition of the present invention preferably contains a polymerizable compound having a ring structure. The ring structure may be an aliphatic ring structure, an aromatic ring structure, or a ring structure combining these, but preferably contains an aliphatic ring structure. The aromatic ring structure may be an aromatic hydrocarbon ring structure or an aromatic heterocyclic structure, but is preferably an aromatic hydrocarbon ring structure, and more preferably a benzene ring structure. The aliphatic ring structure may be an aliphatic hydrocarbon ring structure or an aliphatic heterocyclic structure, but is preferably an aliphatic hydrocarbon ring structure. Specific examples of ring structures contained in the polymerizable compound containing a ring structure include a cyclohexane ring, a norbornene ring, an isonorbornene ring, a dicyclopentane ring, an adamantane ring, a polyphenyl ring, a fluorene ring, and an acenaphthyl ring. The number of ring structures in the polymerizable compound having a ring structure is preferably 1 to 6, more preferably 1 to 4, and even more preferably 1 or 2. Examples of the polymerizable group in the polymerizable compound having a ring structure include a group having an ethylenically unsaturated bond, an alkoxymethyl group, a hydroxymethyl group, an acyloxymethyl group, an epoxy group, an oxetanyl group, and a benzoxazolyl group, with the group having an ethylenically unsaturated bond being preferred. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (e.g., a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group, with the (meth)acryloyloxy group being preferred. The number of polymerizable groups in the polymerizable compound having a ring structure is preferably 1 to 10, more preferably 1 to 6, even more preferably 1 or 2, and particularly preferably 2.

[0145] Furthermore, the resin composition of the present invention preferably contains a polymerizable compound whose homopolymer has a glass transition temperature of 200°C or higher. The glass transition temperature (Tg) of the homopolymer is measured, for example, by a differential scanning calorimeter in accordance with ASTM D3418-8. Note that the glass transition temperature (Tg) varies depending on the molecular weight, but as long as the weight average molecular weight is 10,000 or higher, the variation in Tg due to molecular weight is negligible. The glass transition temperature is preferably 210°C or higher, more preferably 220°C or higher. The upper limit of the glass transition temperature is not particularly limited, but can be, for example, 350°C or lower. Examples of the polymerizable compound include a polymerizable compound having a radical polymerizable group (radical crosslinking agent) or other crosslinking agents.

[0146] [Radical Crosslinking Agent] The resin composition of the present invention preferably contains a radical crosslinking agent. The radical crosslinking agent is a compound having a radical polymerizable group. The radical polymerizable group is preferably a group containing an ethylenically unsaturated bond. Examples of the group containing an ethylenically unsaturated bond include a vinyl group, an allyl group, a vinylphenyl group, a (meth)acryloyl group, a maleimide group, and a (meth)acrylamide group. Among these, a (meth)acryloyl group, a (meth)acrylamide group, and a vinylphenyl group are preferred, and from the viewpoint of reactivity, a (meth)acryloyl group is more preferred.

[0147] The radical crosslinking agent is preferably a compound having one or more ethylenically unsaturated bonds, more preferably a compound having two or more ethylenically unsaturated bonds. The radical crosslinking agent may have three or more ethylenically unsaturated bonds. The compound having two or more ethylenically unsaturated bonds is preferably a compound having 2 to 15 ethylenically unsaturated bonds, more preferably a compound having 2 to 10 ethylenically unsaturated bonds, and even more preferably a compound having 2 to 6 ethylenically unsaturated bonds. From the viewpoint of the film strength of the obtained pattern (cured product), it is also preferable that the resin composition of the present invention contains a compound having two ethylenically unsaturated bonds and the compound having three or more ethylenically unsaturated bonds.

[0148] The molecular weight of the radical crosslinking agent is preferably 2,000 or less, more preferably 1,500 or less, and even more preferably 900 or less. The lower limit of the molecular weight of the radical crosslinking agent is preferably 100 or more.

[0149] Specific examples of radical crosslinking agents include unsaturated carboxylic acids (e.g., acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.), their esters, and amides. Preferred are esters of unsaturated carboxylic acids and polyhydric alcohol compounds, and amides of unsaturated carboxylic acids and polyamine compounds. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having a nucleophilic substituent such as a hydroxyl group, amino group, or sulfanyl group with monofunctional or polyfunctional isocyanates or epoxies, and dehydration condensation reaction products of monofunctional or polyfunctional carboxylic acids. Also suitable are addition reaction products of unsaturated carboxylic acid esters or amides having an electrophilic substituent such as an isocyanate group or an epoxy group with monofunctional or polyfunctional alcohols, amines, or thiols, and substitution reaction products of unsaturated carboxylic acid esters or amides having a leaving substituent such as a halogeno group or a tosyloxy group with monofunctional or polyfunctional alcohols, amines, or thiols. As another example, it is also possible to use a group of compounds in which the above-mentioned unsaturated carboxylic acids are replaced with unsaturated phosphonic acids, vinylbenzene derivatives such as styrene, vinyl ethers, allyl ethers, etc. Specific examples can be found in paragraphs 0113 to 0122 of JP 2016-027357 A, the contents of which are incorporated herein by reference.

[0150] The radical crosslinking agent is preferably a compound having a boiling point of 100°C or higher under normal pressure. Examples of compounds having a boiling point of 100°C or higher under normal pressure include the compounds described in paragraph 0203 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0151] Other preferred radical crosslinking agents than those mentioned above include the radical polymerizable compounds described in paragraphs 0204 to 0208 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0152] Preferred radical crosslinking agents include dipentaerythritol triacrylate (commercially available products include KAYARAD D-330 (manufactured by Nippon Kayaku Co., Ltd.)), dipentaerythritol tetraacrylate (commercially available products include KAYARAD D-320 (manufactured by Nippon Kayaku Co., Ltd.) and A-TMMT (manufactured by Shin-Nakamura Chemical Co., Ltd.)), dipentaerythritol penta(meth)acrylate (commercially available products include KAYARAD D-310 (manufactured by Nippon Kayaku Co., Ltd.)), and dipentaerythritol hexa(meth)acrylate (commercially available products include KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.) and A-DPH (manufactured by Shin-Nakamura Chemical Co., Ltd.)), and structures in which the (meth)acryloyl group is bonded via an ethylene glycol residue or a propylene glycol residue. Oligomers of these agents can also be used.

[0153] Commercially available radical crosslinking agents include, for example, SR-494, a tetrafunctional acrylate having four ethyleneoxy chains, SR-209, 231, and 239, which are difunctional methacrylates having four ethyleneoxy chains (all manufactured by Sartomer Corporation), DPCA-60, a hexafunctional acrylate having six pentyleneoxy chains, and TPA-330, a trifunctional acrylate having three isobutyleneoxy chains (all manufactured by Nippon Kayaku Co., Ltd.), and urethane oligomers such as Examples of such an ester include UAS-10 and UAB-140 (manufactured by Nippon Paper Industries Co., Ltd.), NK Ester M-40G, NK Ester 4G, NK Ester M-9300, NK Ester A-9300, and UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), DPHA-40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, and AI-600 (manufactured by Kyoeisha Chemical Co., Ltd.), and Blenmar PME400 (manufactured by NOF Corporation).

[0154] Suitable radical crosslinking agents include urethane acrylates such as those described in JP-B No. 48-041708, JP-A No. 51-037193, JP-B No. 02-032293, and JP-B No. 02-016765, and urethane compounds having an ethylene oxide skeleton such as those described in JP-B No. 58-049860, JP-B No. 56-017654, JP-B No. 62-039417, and JP-B No. 62-039418. Compounds having an amino structure or a sulfide structure in the molecule, such as those described in JP-A Nos. 63-277653, 63-260909, and JP-A No. 01-105238, can also be used as radical crosslinking agents.

[0155] The radical crosslinking agent may be a radical crosslinking agent having an acid group such as a carboxy group or a phosphate group. The radical crosslinking agent having an acid group is preferably an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and more preferably a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group. Particularly preferred is a radical crosslinking agent obtained by reacting a non-aromatic carboxylic anhydride with an unreacted hydroxy group of an aliphatic polyhydroxy compound to provide an acid group, in which the aliphatic polyhydroxy compound is pentaerythritol or dipentaerythritol. Examples of commercially available products include polybasic acid-modified acrylic oligomers M-510 and M-520 manufactured by Toagosei Co., Ltd.

[0156] The acid value of the radical crosslinking agent having an acid group is preferably 0.1 to 300 mgKOH / g, more preferably 1 to 100 mgKOH / g. When the acid value of the radical crosslinking agent is within the above range, the agent has excellent handleability in production and developability. Furthermore, the agent has good polymerizability. The acid value is measured in accordance with the description of JIS K 0070:1992.

[0157] The radical crosslinking agent is preferably a radical crosslinking agent having at least one selected from the group consisting of a urea bond and a urethane bond (hereinafter also referred to as "crosslinking agent U"). Examples of crosslinking agent U include the compounds described in paragraphs 0133 to 0143 of WO 2023 / 190064, the contents of which are incorporated herein by reference.

[0158] From the viewpoints of pattern resolution and film elasticity, it is preferable to use a bifunctional methacrylate or acrylate for the resin composition. Specific compounds include triethylene glycol diacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, tetraethylene glycol diacrylate, PEG (polyethylene glycol) 200 diacrylate, PEG 200 dimethacrylate, PEG 600 diacrylate, PEG 600 dimethacrylate, polytetraethylene glycol diacrylate, polytetraethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, neopentyl glycol diacrylate, neopentyl glycol dimethacrylate, 3-methyl-1,5-pentanediol diacrylate, 1,6-hexyl ... Xanediol diacrylate, 1,6-hexanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, dimethylol-tricyclodecane dimethacrylate, ethylene oxide (EO) adduct diacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, propylene oxide (PO) adduct dimethacrylate of bisphenol A, 2-hydroxy-3-acryloyloxypropyl methacrylate, EO-modified isocyanuric acid diacrylate, EO-modified isocyanuric acid dimethacrylate, and other bifunctional acrylates and bifunctional methacrylates having a urethane bond can be used. Two or more of these can be mixed and used as needed. For example, PEG200 diacrylate refers to polyethylene glycol diacrylate with a formula weight of approximately 200 for the polyethylene glycol chain. From the viewpoint of suppressing warpage of the pattern (cured product), a monofunctional radical crosslinking agent can preferably be used as the radical crosslinking agent in the resin composition of the present invention.Preferred examples of monofunctional radical crosslinking agents include (meth)acrylic acid derivatives such as n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, butoxyethyl (meth)acrylate, carbitol (meth)acrylate, cyclohexyl (meth)acrylate, benzyl (meth)acrylate, phenoxyethyl (meth)acrylate, N-methylol (meth)acrylamide, glycidyl (meth)acrylate, polyethylene glycol mono(meth)acrylate, and polypropylene glycol mono(meth)acrylate; N-vinyl compounds such as N-vinylpyrrolidone and N-vinylcaprolactam; and allyl glycidyl ether. Preferred monofunctional radical crosslinking agents include compounds having a boiling point of 100°C or higher under normal pressure in order to suppress volatilization before exposure. Other examples of bifunctional or higher radical crosslinking agents include allyl compounds such as diallyl phthalate and triallyl trimellitate.

[0159] When a radical crosslinking agent is contained, the content of the radical crosslinking agent is preferably more than 0% by mass and not more than 60% by mass, based on the total solid content of the resin composition. The lower limit is more preferably 5% by mass or more. The upper limit is more preferably 50% by mass or less, and even more preferably 30% by mass or less.

[0160] The radical crosslinking agent may be used alone or in combination of two or more. When two or more types are used in combination, the total amount thereof is preferably within the above range.

[0161] [Other Crosslinking Agents] The resin composition of the present invention preferably contains another crosslinking agent different from the radical crosslinking agent described above. The other crosslinking agent refers to a crosslinking agent other than the radical crosslinking agent described above. Preferably, the other crosslinking agent is a compound having a plurality of groups in the molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products upon exposure to light by a photoacid generator or a photobase generator. Preferably, the other crosslinking agent is a compound having a plurality of groups in the molecule that promote the reaction of forming a covalent bond with other compounds in the composition or their reaction products under the action of an acid or base. Examples of other crosslinking agents include the compounds described in paragraphs 0179 to 0207 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0162] The content of the other crosslinking agent is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and particularly preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of other crosslinking agent may be contained, or two or more types may be contained. When two or more types of other crosslinking agents are contained, the total amount thereof is preferably within the above range.

[0163] [Polymerization initiator] The resin composition of the present invention preferably contains a polymerization initiator. By including a polymerization initiator, crosslinking is promoted, thereby increasing the room temperature elastic modulus of the film and increasing the polishing rate during CMP. The polymerization initiator preferably contains a polymerization initiator that can initiate polymerization by light or heat, and it is also preferable to include a polymerization initiator that can initiate polymerization by light and heat. Among these, from the viewpoint of increasing the degree of crosslinking and increasing the hardness of the cured film, which makes CMP polishing easier, it is preferable to include a thermal polymerization initiator as the polymerization initiator. Furthermore, from the viewpoint of enabling patterning of the cured film by exposure and development, and making CMP polishing easier, it is preferable to include a photopolymerization initiator as the polymerization initiator.

[0164] -Thermal Polymerization Initiator- The resin composition of the present invention may contain a thermal polymerization initiator, and in particular may contain a thermal radical polymerization initiator. A thermal radical polymerization initiator is a compound that generates radicals by thermal energy and initiates or accelerates the polymerization reaction of a polymerizable compound. Adding a thermal radical polymerization initiator can also promote the polymerization reaction of the resin and the polymerizable compound, thereby further improving solvent resistance. In addition, a photopolymerization initiator, which will be described later, may also have the function of initiating polymerization by heat, and may be added as a thermal polymerization initiator.

[0165] Examples of the thermal polymerization initiator include known azo compounds and known peroxide compounds. Examples of the azo compounds include azobis compounds. The azo compounds may be compounds having a cyano group or may be compounds not having a cyano group. Examples of the peroxide compounds include ketone peroxides, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, peroxydicarbonates, and peroxyesters. As the thermal polymerization initiator, commercially available products can also be used, and examples thereof include V-40, V-601, and VF-096 manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd., and Perhexyl O, Perhexyl D, Perhexyl I, Perhexyne 25B, Perhexa 25O, Perhexa 25Z, Perbutyl P, Perbutyl L, Perbutyl D, Percumyl D, Percumyl D-40, Percumyl D-40MB, Percumyl H, Percumyl P, and Percumyl ND manufactured by NOF Corporation.

[0166] Specific examples of the thermal radical polymerization initiator include compounds described in paragraphs 0074 to 0118 of JP-A-2008-063554, the contents of which are incorporated herein by reference.

[0167] When a thermal polymerization initiator is contained, the content thereof is preferably 0.1 to 30 mass% relative to the total solid content of the resin composition of the present invention, more preferably 0.1 to 20 mass%, and even more preferably 0.5 to 15 mass%. Only one type of thermal polymerization initiator may be contained, or two or more types may be contained. When two or more types of thermal polymerization initiators are contained, it is preferable that the total amount is in the above range.

[0168] Photopolymerization initiator: The photopolymerization initiator is preferably a photoradical polymerization initiator. There are no particular limitations on the photoradical polymerization initiator, and it can be appropriately selected from known photoradical polymerization initiators. For example, a photoradical polymerization initiator that is photosensitive to light in the ultraviolet to visible region is preferred. Alternatively, it may be an activator that reacts with a photoexcited sensitizer to generate active radicals.

[0169] The photoradical polymerization initiator has a capacity of at least about 50 L·mol within a wavelength range of about 240 to 800 nm (preferably 330 to 500 nm). －１ ・cm －１ It is preferable that the compound contains at least one compound having a molar absorption coefficient of

[0170] Any known compound can be used as the photoradical polymerization initiator. Examples include halogenated hydrocarbon derivatives (e.g., compounds having a triazine skeleton, compounds having an oxadiazole skeleton, compounds having a trihalomethyl group, etc.), acylphosphine compounds such as acylphosphine oxide, hexaarylbiimidazole, oxime compounds such as oxime derivatives, organic peroxides, thio compounds, ketone compounds, aromatic onium salts, ketoxime ethers, α-aminoketone compounds such as aminoacetophenone, α-hydroxyketone compounds such as hydroxyacetophenone, azo compounds, azide compounds, metallocene compounds, organic boron compounds, and iron arene complexes. For details of these compounds, please refer to paragraphs

[0165] to

[0182] of JP 2016-027357 A and paragraphs

[0138] to

[0151] of WO 2015 / 199219 A, the contents of which are incorporated herein by reference. Further, paragraphs 0065 to 0111 of JP 2014-130173 A, compounds described in Japanese Patent No. 6301489, MATERIAL STAGE 37 to 60p, vol. 19, No. 3,2019 described peroxide-based photopolymerization initiators, photopolymerization initiators described in WO 2018 / 221177, photopolymerization initiators described in WO 2018 / 110179, photopolymerization initiators described in JP 2019-043864 A, photopolymerization initiators described in JP 2019-044030 A, peroxide-based initiators described in JP 2019-167313 A can be mentioned, the contents of which are incorporated herein by reference.

[0171] Examples of ketone compounds include the compounds described in paragraph 0087 of JP 2015-087611 A, the contents of which are incorporated herein by reference. As a commercially available product, Kayacure-DETX-S (manufactured by Nippon Kayaku Co., Ltd.) is also preferably used.

[0172] In one embodiment of the present invention, a hydroxyacetophenone compound, an aminoacetophenone compound, or an acylphosphine compound can be suitably used as the photoradical polymerization initiator. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 or an acylphosphine oxide-based initiator described in Japanese Patent No. 4225898 can be used, the contents of which are incorporated herein by reference.

[0173] Examples of α-hydroxyketone initiators that can be used include Omnirad 184, Omnirad 1173, Omnirad 2959, and Omnirad 127 (all manufactured by IGM Resins B.V.), IRGACURE 184 (IRGACURE is a registered trademark), DAROCUR 1173, IRGACURE 500, IRGACURE-2959, and IRGACURE 127 (all manufactured by BASF).

[0174] Examples of α-aminoketone initiators that can be used include Omnirad 907, Omnirad 369, Omnirad 369E, and Omnirad 379EG (all manufactured by IGM Resins B.V.), and IRGACURE 907, IRGACURE 369, and IRGACURE 379 (all manufactured by BASF).

[0175] As the aminoacetophenone initiator, acylphosphine oxide initiator, and metallocene compound, for example, compounds described in paragraphs 0161 to 0163 of WO 2021 / 112189 can also be suitably used. The contents of this specification are incorporated herein by reference.

[0176] As the photoradical polymerization initiator, an oxime compound is more preferably used. By using an oxime compound, it is possible to more effectively improve the exposure latitude. An oxime compound is particularly preferred because it has a wide exposure latitude (exposure margin) and also functions as a photocuring accelerator.

[0177] Specific examples of the oxime compound include compounds described in JP-A-2001-233842, compounds described in JP-A-2000-080068, compounds described in JP-A-2006-342166, compounds described in J. C. S. Perkin II (1979, pp. 1653-1660), compounds described in J. C. S. Perkin II (1979, pp. 156-162), compounds described in Journal of Photopolymer Science and Technology (1995, pp.202-232) described compounds, compounds described in JP-A-2000-066385, compounds described in JP-T-2004-534797, compounds described in JP-A-2017-019766, compounds described in Japanese Patent No. 6065596, compounds described in WO 2015 / 152153, compounds described in WO 2017 / 051680, compounds described in JP-A-2017-198865, compounds described in paragraphs 0025 to 0038 of WO 2017 / 164127, compounds described in WO 2013 / 167515 and the like, the contents of which are incorporated herein.

[0178] Preferred oxime compounds include, for example, compounds having the following structure: 3-(benzoyloxy(imino))butan-2-one, 3-(acetoxy(imino))butan-2-one, 3-(propionyloxy(imino))butan-2-one, 2-(acetoxy(imino))pentan-3-one, 2-(acetoxy(imino))-1-phenylpropan-1-one, 2-(benzoyloxy(imino))-1-phenylpropan-1-one, 3-((4-toluenesulfonyloxy)imino)butan-2-one, and 2-(ethoxycarbonyloxy(imino))-1-phenylpropan-1-one. In the resin composition, it is particularly preferable to use an oxime compound as a photoradical polymerization initiator. The oxime compound as a photoradical polymerization initiator has a linking group of >C=N-O-C(=O)- in the molecule.

[0179]

[0180] Commercially available oxime compounds include IRGACURE OXE 01, IRGACURE OXE 02, IRGACURE OXE 03, and IRGACURE OXE 04 (manufactured by BASF), ADEKA OPTOMER N-1919 (manufactured by ADEKA Corporation, photoradical polymerization initiator 2 described in JP 2012-014052 A), TR-PBG-304, TR-PBG-305 (manufactured by Changzhou Strong Electronic New Materials Co., Ltd.), ADEKA ARCLES NCI-730, NCI-831, and ADEKA ARCLES NCI-930 (manufactured by ADEKA Corporation), DFI-091 (manufactured by Daito ChemiX Co., Ltd.), and SpeedCure PDO (SARTOMER Also, an oxime compound having the following structure can be used.

[0181] Examples of photoradical polymerization initiators include oxime compounds having a fluorene ring, oxime compounds having a skeleton in which at least one benzene ring of a carbazole ring is replaced with a naphthalene ring, and oxime compounds having a fluorine atom, as described in paragraphs 0169 to 0171 of WO 2021 / 112189. Also usable are oxime compounds having a nitro group, oxime compounds having a benzofuran skeleton, and oxime compounds in which a substituent having a hydroxy group is bonded to a carbazole skeleton, as described in paragraphs 0208 to 0210 of WO 2021 / 020359. The contents of these compounds are incorporated herein by reference.

[0182] In addition, compounds described in paragraphs 0113 to 0117 of JP-A No. 2023-058585 can also be used as the photopolymerization initiator, the disclosure of which is incorporated herein by reference.

[0183] When the resin composition contains a photopolymerization initiator, the content thereof is preferably 0.1 to 30% by mass, more preferably 0.1 to 20% by mass, even more preferably 0.5 to 15% by mass, and even more preferably 1.0 to 10% by mass, based on the total solid content of the resin composition. Only one type of photopolymerization initiator may be contained, or two or more types may be contained. When two or more types of photopolymerization initiators are contained, the total amount is preferably within the above range. Note that the photopolymerization initiator may also function as a thermal polymerization initiator, and therefore crosslinking by the photopolymerization initiator may be further promoted by heating in an oven, hot plate, or the like.

[0184] [Sensitizer] The resin composition may contain a sensitizer. The sensitizer absorbs specific actinic radiation and becomes electronically excited. The electronically excited sensitizer comes into contact with a thermal radical polymerization initiator, a photoradical polymerization initiator, or the like, and undergoes electron transfer, energy transfer, heat generation, and other actions. This causes the thermal radical polymerization initiator or the photoradical polymerization initiator to undergo a chemical change and decompose, generating a radical, acid, or base. Usable sensitizers include benzophenone-based, Michler's ketone-based, coumarin-based, pyrazole azo-based, anilino azo-based, triphenylmethane-based, anthraquinone-based, anthracene-based, anthrapyridone-based, benzylidene-based, oxonol-based, pyrazolotriazole azo-based, pyridone azo-based, cyanine-based, phenothiazine-based, pyrrolopyrazole azomethine-based, xanthene-based, phthalocyanine-based, benzopyran-based, and indigo-based compounds. Examples of the sensitizer include the compounds described in paragraph 0202 of WO 2023 / 190064.

[0185] When the resin composition contains a sensitizer, the content of the sensitizer is preferably 0.01 to 20 mass %, more preferably 0.1 to 15 mass %, and still more preferably 0.5 to 10 mass %, based on the total solid content of the resin composition. The sensitizer may be used alone or in combination of two or more types.

[0186] [Chain Transfer Agent] The resin composition of the present invention may contain a chain transfer agent. Chain transfer agents are defined, for example, in the Third Edition of the Polymer Dictionary (edited by the Society of Polymer Science, 2005), pages 683-684. Examples of chain transfer agents include those having -S-S-, -SO ２ Examples of compounds that can be used include compounds having -S-, -N-O-, SH, PH, SiH, and GeH, and dithiobenzoates, trithiocarbonates, dithiocarbamates, and xanthate compounds having a thiocarbonylthio group used in RAFT (Reversible Addition Fragmentation Chain Transfer) polymerization. These compounds can donate hydrogen to low-activity radicals to generate radicals, or can be oxidized and then deprotonated to generate radicals. Thiol compounds are particularly preferred.

[0187] In addition, the chain transfer agent may be a compound described in paragraphs 0152 to 0153 of WO 2015 / 199219, the contents of which are incorporated herein by reference.

[0188] When the resin composition contains a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the total solid content of the resin composition. Only one type of chain transfer agent may be used, or two or more types may be used. When two or more types of chain transfer agents are used, the total content thereof is preferably within the above range.

[0189] <Base Generator> The resin composition of the present invention may contain a base generator. Here, the base generator is a compound capable of generating a base through physical or chemical action. Preferred base generators include thermal base generators and photobase generators. In particular, when the imidization rate of the specific resin is less than 100%, the resin composition preferably contains a base generator. By containing a thermal base generator in the resin composition, for example, the cyclization reaction of the specific resin can be promoted by heating, and the mechanical properties and chemical resistance of the cured product can be improved, resulting in excellent performance as an interlayer insulating film for a rewiring layer included in a semiconductor package. The base generator may be an ionic base generator or a nonionic base generator. Examples of the base generated from the base generator include secondary amines and tertiary amines. The base generator is not particularly limited, and known base generators can be used. Examples of known base generators include carbamoyl oxime compounds, carbamoyl hydroxylamine compounds, carbamic acid compounds, formamide compounds, acetamide compounds, carbamate compounds, benzyl carbamate compounds, nitrobenzyl carbamate compounds, sulfonamide compounds, imidazole derivative compounds, amine imide compounds, pyridine derivative compounds, α-aminoacetophenone derivative compounds, quaternary ammonium salt derivative compounds, iminium salts, pyridinium salts, α-lactone ring derivative compounds, phthalimide derivative compounds, and acyloxyimino compounds. Specific examples of non-ionic base generators include the compounds described in paragraphs 0249 to 0275 of WO 2022 / 145355. The above descriptions are incorporated herein by reference.

[0190] When the resin composition contains a base generator, the content of the base generator is preferably 0.1 to 50 parts by mass per 100 parts by mass of the resin in the resin composition. The lower limit is more preferably 0.3 parts by mass or more, and even more preferably 0.5 parts by mass or more. The upper limit is more preferably 30 parts by mass or less, even more preferably 20 parts by mass or less, even more preferably 10 parts by mass or less, even more preferably 5 parts by mass or less, and particularly preferably 4 parts by mass or less. One or more types of base generators can be used. When two or more types are used, the total amount is preferably within the above range.

[0191] <Solvent> The resin composition of the present invention preferably contains a solvent. Any known solvent can be used as the solvent. The solvent is preferably an organic solvent. Examples of the organic solvent include compounds such as esters, ethers, ketones, cyclic hydrocarbons, sulfoxides, amides, ureas, and alcohols.

[0192] Examples of esters include ethyl acetate, n-butyl acetate, isobutyl acetate, hexyl acetate, amyl formate, isoamyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, methyl lactate, ethyl lactate, γ-butyrolactone, ε-caprolactone, δ-valerolactone, γ-valerolactone, alkyl alkyloxyacetates (for example, methyl alkyloxyacetate, ethyl alkyloxyacetate, butyl alkyloxyacetate (for example, methyl methoxyacetate, ethyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.)), 3-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-alkyloxypropionate (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters ...alkyloxypropionate, ethyl 3-alkyloxypropionate, 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3-alkyloxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.)), 2-alkyloxypropionic acid alkyl esters (for example, methyl 3- Preferred examples thereof include alkyl esters of alkyloxypropionates (e.g., methyl 2-alkyloxypropionate, ethyl 2-alkyloxypropionate, propyl 2-alkyloxypropionate (e.g., methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate)), methyl 2-alkyloxy-2-methylpropionate and ethyl 2-alkyloxy-2-methylpropionate (e.g., methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate), methyl pyruvate, ethyl pyruvate, propyl pyruvate, methyl acetoacetate, ethyl acetoacetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, ethyl hexanoate, ethyl heptanoate, dimethyl malonate, and diethyl malonate.

[0193] Suitable examples of ethers include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, ethylene glycol monobutyl ether, ethylene glycol monobutyl ether acetate, diethylene glycol ethyl methyl ether, propylene glycol monopropyl ether acetate, and dipropylene glycol dimethyl ether.

[0194] Suitable examples of ketones include methyl ethyl ketone, cyclohexanone, cyclopentanone, 2-heptanone, 3-heptanone, 3-methylcyclohexanone, levoglucosenone, and dihydrolevoglucosenone.

[0195] Suitable examples of cyclic hydrocarbons include aromatic hydrocarbons such as toluene, xylene, and anisole, and cyclic terpenes such as limonene.

[0196] A preferred example of the sulfoxides is dimethyl sulfoxide.

[0197] Preferred examples of the amides include N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-cyclohexyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-dimethylformamide, N,N-dimethylisobutyramide, 3-methoxy-N,N-dimethylpropionamide, 3-butoxy-N,N-dimethylpropionamide, N-formylmorpholine, and N-acetylmorpholine.

[0198] Preferred examples of ureas include N,N,N',N'-tetramethylurea and 1,3-dimethyl-2-imidazolidinone.

[0199] Examples of alcohols include methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 1-pentanol, 1-hexanol, benzyl alcohol, ethylene glycol monomethyl ether, 1-methoxy-2-propanol, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethylene glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, methylphenyl carbinol, n-amyl alcohol, methyl amyl alcohol, and diacetone alcohol.

[0200] From the viewpoint of improving the properties of the coated surface, it is also preferable to mix two or more kinds of solvents.

[0201] In the present invention, one solvent selected from methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether, butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, cyclopentanone, γ-butyrolactone, γ-valerolactone, 3-methoxy-N,N-dimethylpropionamide, toluene, dimethyl sulfoxide, ethyl carbitol acetate, butyl carbitol acetate, N-methyl-2-pyrrolidone, propylene glycol methyl ether, propylene glycol methyl ether acetate, levoglucosenone, and dihydrolevoglucosenone, or a mixed solvent composed of two or more solvents, is preferred. Particularly preferred are a combination of dimethyl sulfoxide and γ-butyrolactone, a combination of dimethyl sulfoxide and γ-valerolactone, a combination of 3-methoxy-N,N-dimethylpropionamide and γ-butyrolactone, a combination of 3-methoxy-N,N-dimethylpropionamide, γ-butyrolactone and dimethyl sulfoxide, or a combination of N-methyl-2-pyrrolidone and ethyl lactate. An embodiment in which toluene is further added to these combined solvents in an amount of approximately 1 to 10% by mass, based on the total mass of the solvent, is also a preferred embodiment of the present invention. In particular, from the viewpoint of the storage stability of the resin composition, an embodiment in which γ-valerolactone is included as a solvent is also a preferred embodiment of the present invention. In such an embodiment, the content of γ-valerolactone relative to the total mass of the solvent is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more. The upper limit of the above content is not particularly limited and may be 100% by mass. The above content may be determined taking into consideration the solubility of components such as the specific resin contained in the resin composition, etc. Furthermore, when dimethyl sulfoxide and γ-valerolactone are used in combination, the solvent preferably contains 60 to 90 mass% of γ-valerolactone and 10 to 40 mass% of dimethyl sulfoxide, more preferably 70 to 90 mass% of γ-valerolactone and 10 to 30 mass% of dimethyl sulfoxide, and even more preferably 75 to 85 mass% of γ-valerolactone and 15 to 25 mass% of dimethyl sulfoxide, relative to the total mass of the solvent.

[0202] Furthermore, the resin composition of the present invention preferably contains one or more solvents selected from the group consisting of γ-butyrolactone and N-methyl-2-pyrrolidone, and ethyl lactate as solvents. The inclusion of ethyl lactate results in excellent film-forming properties. This is thought to be because ethyl lactate has low hydrophilicity, and its inclusion suppresses resin precipitation due to moisture in residual solvent when the composition is dried. In the above embodiment, the total content of one or more solvents selected from the group consisting of γ-butyrolactone and N-methyl-2-pyrrolidone and ethyl lactate is preferably 50% by mass or more, more preferably 60% by mass or more, and even more preferably 70% by mass or more, based on the total mass of the solvent. The upper limit of the content is not particularly limited, as long as it is 100% by mass or less. In the above-mentioned embodiment, the content of the one or more solvents selected from the group consisting of γ-butyrolactone and N-methyl-2-pyrrolidone relative to the total content of the one or more solvents selected from the group consisting of γ-butyrolactone and N-methyl-2-pyrrolidone and ethyl lactate is preferably 80 to 99.9 mass%, more preferably 90 to 99.5 mass%, and even more preferably 90 to 99.0 mass%. In the above-mentioned embodiment, the resin composition of the present invention preferably further contains dimethyl sulfoxide as a solvent. The inclusion of dimethyl sulfoxide improves the storage stability of the composition. This is presumably because dimethyl sulfoxide has high polarity, which suppresses aggregation of the resin in the composition. When dimethyl sulfoxide is contained, the content of dimethyl sulfoxide relative to the total mass of the solvent is preferably 10 to 40 mass%, more preferably 15 to 35 mass%, and even more preferably 20 to 30 mass%.

[0203] From the viewpoint of coatability, the content of the solvent is preferably an amount such that the total solids concentration of the resin composition of the present invention is 5 to 80 mass %, more preferably an amount such that the total solids concentration is 5 to 75 mass %, even more preferably an amount such that the total solids concentration is 10 to 70 mass %, and even more preferably an amount such that the total solids concentration is 20 to 70 mass %. The solvent content may be adjusted depending on the desired thickness of the coating film and the coating method. When two or more solvents are contained, the total amount of the solvents is preferably within the above range.

[0204] [Filler] The resin composition of the present invention may contain a filler. As the filler, those described in paragraphs 0075 to 0092 of JP-A No. 2023-178289 can be used. The above description is incorporated herein by reference.

[0205] The content of the filler in the composition is preferably 1% by volume or more, more preferably 5% by volume or more, particularly preferably 10% by volume or more, and most preferably 20% by volume or more, based on the volume of the total solids of the composition. From the viewpoint of processability by lithography, the content is more preferably 85% by volume or less, even more preferably 81% by volume or less, particularly preferably 75% by volume or less, and most preferably 60% by volume or less, based on the volume of the total solids of the composition. The content of the filler in the composition is preferably 10% by mass or more, more preferably 30% by mass or more, based on the mass of the total solids of the composition. From the viewpoint of processability by lithography, the upper limit of this ratio is preferably 90% by mass or less, particularly preferably 70% by mass or less. In this way, by considering processability in addition to thermal conductivity and electrical insulation, a heat-conducting layer with high thermal conductivity and electrical insulation can be formed in a desired position and pattern. When the resin composition of the present invention contains a filler, the description of the "content relative to the total solid content" of components other than the filler shall be read as meaning the "content relative to the total solid content excluding the filler."

[0206] The proportion of particles having an average primary particle size of 0.5 to 15 μm in the filler is preferably 50% by mass or more, more preferably 80% by mass or more. The upper limit of this proportion can be set to 100% by mass or 99% by mass or less. From the viewpoint of processability by lithography, this proportion is preferably 99% by mass or less, more preferably 95% by mass or less.

[0207] As described above, the filler can be used alone or in combination of two or more types, and when two or more types of fillers are contained, the total amount thereof is preferably within the above range.

[0208] <Metal Adhesion Improver> The resin composition of the present invention preferably contains a metal adhesion improver from the viewpoint of improving adhesion to metal materials used in electrodes, wiring, etc. Examples of metal adhesion improvers include silane coupling agents having an alkoxysilyl group, aluminum-based adhesion aids, titanium-based adhesion aids, compounds having a sulfonamide structure, compounds having a thiourea structure, phosphoric acid derivative compounds, β-ketoester compounds, and amino compounds.

[0209] [Silane Coupling Agent] Examples of silane coupling agents include the compounds described in paragraph 0316 of WO 2021 / 112189 and the compounds described in paragraphs 0067 to 0078 of JP 2018-173573 A, the contents of which are incorporated herein by reference. It is also preferable to use two or more different silane coupling agents, as described in paragraphs 0050 to 0058 of JP 2011-128358 A. It is also preferable to use the following compounds as the silane coupling agent. In the formula below, Me represents a methyl group, and Et represents an ethyl group. Furthermore, the following R represents a structure derived from a blocking agent in a blocked isocyanate group. The blocking agent may be selected depending on the desorption temperature, and examples include alcohol compounds, phenol compounds, pyrazole compounds, triazole compounds, lactam compounds, and active methylene compounds. For example, caprolactam is preferred from the viewpoint of achieving a desorption temperature of 160 to 180°C. Commercially available products of such compounds include X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0210]

[0211] Other silane coupling agents include, for example, vinyltrimethoxysilane, vinyltriethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, 3-acryloxypropyltrimethoxysilane, N-2- Examples of suitable silane coupling agents include (aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N-(1,3-dimethylbutylidene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, tris-(trimethoxysilylpropyl)isocyanurate, 3-ureidopropyltrialkoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, and 3-trimethoxysilylpropylsuccinic anhydride. These may be used alone or in combination of two or more. Furthermore, oligomeric compounds having multiple alkoxysilyl groups may also be used as silane coupling agents. Examples of such oligomeric compounds include compounds containing a repeating unit represented by the following formula (S-1): In formula (S-1), R Ｓ１ represents a monovalent organic group, R Ｓ２ represents a hydrogen atom, a hydroxy group or an alkoxy group, and n represents an integer of 0 to 2. Ｓ１is preferably a structure containing a polymerizable group. Examples of the polymerizable group include a group having an ethylenically unsaturated bond, an epoxy group, an oxetanyl group, a benzoxazolyl group, a blocked isocyanate group, and an amino group. Examples of the group having an ethylenically unsaturated bond include a vinyl group, an allyl group, an isoallyl group, a 2-methylallyl group, a group having an aromatic ring directly bonded to a vinyl group (for example, a vinylphenyl group), a (meth)acrylamide group, and a (meth)acryloyloxy group. A vinylphenyl group, a (meth)acrylamide group, or a (meth)acryloyloxy group is preferred, a vinylphenyl group or a (meth)acryloyloxy group is more preferred, and a (meth)acryloyloxy group is even more preferred. R Ｓ２ is preferably an alkoxy group, more preferably a methoxy group or an ethoxy group. n represents an integer of 0 to 2, preferably 1. Here, the structures of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound may be the same. Here, of the multiple repeating units represented by formula (S-1) contained in the oligomer-type compound, it is preferable that n is 1 or 2 in at least one, more preferably that n is 1 or 2 in at least two, and even more preferably that n is 1 in at least two. Such oligomer-type compounds can be commercially available products, and an example of a commercially available product is KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.).

[0212] [Aluminum-Based Adhesion Aid] Examples of aluminum-based adhesion aids include aluminum tris(ethylacetoacetate), aluminum tris(acetylacetonate), and ethylacetoacetate aluminum diisopropylate.

[0213] Other metal adhesion improvers that can be used include the compounds described in paragraphs 0046 to 0049 of JP-A-2014-186186 and the sulfide-based compounds described in paragraphs 0032 to 0043 of JP-A-2013-072935, the contents of which are incorporated herein by reference.

[0214] The content of the metal adhesion improver is preferably 0.01 to 30 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.5 to 5 parts by mass, relative to 100 parts by mass of the specific resin. By ensuring that the content is equal to or greater than the above lower limit, the adhesion between the pattern and the metal layer is improved, and by ensuring that the content is equal to or less than the above upper limit, the heat resistance and mechanical properties of the pattern are improved. Only one type of metal adhesion improver may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount is within the above range.

[0215] <Migration Inhibitor> The resin composition of the present invention preferably further contains a migration inhibitor. By including a migration inhibitor, for example, when the resin composition is applied to a metal layer (or metal wiring) to form a film, migration of metal ions derived from the metal layer (or metal wiring) into the film can be effectively inhibited.

[0216] The migration inhibitor is not particularly limited, but examples thereof include compounds having a heterocycle (pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyrazole ring, isoxazole ring, isothiazole ring, tetrazole ring, pyridine ring, pyridazine ring, pyrimidine ring, pyrazine ring, piperidine ring, piperazine ring, morpholine ring, 2H-pyran ring, 6H-pyran ring, triazine ring), thioureas and compounds having a sulfanyl group, hindered phenol compounds, salicylic acid derivative compounds, and hydrazide derivative compounds. In particular, triazole compounds such as 1,2,4-triazole, benzotriazole, 3-amino-1,2,4-triazole, 3,5-diamino-1,2,4-triazole, and 8-azaadenine, and tetrazole compounds such as 1H-tetrazole, 5-phenyltetrazole, and 5-amino-1H-tetrazole are preferably used.

[0217] As the migration inhibitor, an ion trapping agent that traps anions such as halogen ions can also be used.

[0218] Other migration inhibitors include the rust inhibitors described in paragraph 0094 of JP-A-2013-015701, the compounds described in paragraphs 0073 to 0076 of JP-A-2009-283711, the compounds described in paragraph 0052 of JP-A-2011-059656, the compounds described in paragraphs 0114, 0116 and 0118 of JP-A-2012-194520, and the compounds described in paragraph 0166 of WO 2015 / 199219. The contents of this specification are incorporated herein by reference.

[0219] Specific examples of the migration inhibitor include the following compounds.

[0220]

[0221] When the resin composition of the present invention contains a migration inhibitor, the content of the migration inhibitor is preferably 0.01 to 5.0 mass%, more preferably 0.05 to 2.0 mass%, and even more preferably 0.1 to 1.0 mass%, based on the total solid content of the resin composition.

[0222] The migration inhibitor may be one kind or two or more kinds. When two or more kinds of migration inhibitors are used, the total amount thereof is preferably within the above range.

[0223] <Light absorber> The resin composition of the present invention preferably contains a compound (light absorber) whose absorbance at the exposure wavelength is reduced by exposure. Examples of the light absorber include the compounds described in paragraphs 0159 to 0183 of WO 2022 / 202647 and the compounds described in paragraphs 0088 to 0108 of JP 2019-206689 A. The contents of these compounds are incorporated herein by reference.

[0224] The content of the light absorber relative to the total solid content of the resin composition of the present invention is not particularly limited, but is preferably 0.1 to 20 mass%, more preferably 0.5 to 10 mass%, and even more preferably 1 to 5 mass%.

[0225] <Polymerization Inhibitor> The resin composition of the present invention preferably contains a polymerization inhibitor. Examples of the polymerization inhibitor include phenolic compounds, quinone compounds, amino compounds, N-oxyl free radical compounds, nitro compounds, nitroso compounds, heteroaromatic ring compounds, and metal compounds.

[0226] Specific examples of the polymerization inhibitor include the compounds described in paragraph 0310 of WO 2021 / 112189, p-hydroquinone, o-hydroquinone, 4-hydroxy-2,2,6,6-tetramethylpiperidine 1-oxyl free radical, phenoxazine, 1,4,4-trimethyl-2,3-diazabicyclo[3.2.2]non-2-ene-N,N-dioxide, and the like, the contents of which are incorporated herein by reference.

[0227] When the resin composition of the present invention contains a polymerization inhibitor, the content of the polymerization inhibitor is preferably 0.01 to 20 mass%, more preferably 0.02 to 15 mass%, and even more preferably 0.05 to 10 mass%, based on the total solid content of the resin composition.

[0228] The polymerization inhibitor may be one kind or two or more kinds. When two or more kinds of polymerization inhibitors are used, the total amount thereof is preferably within the above range.

[0229] <Other Additives> The resin composition of the present invention may contain various additives, as needed, within the scope of obtaining the effects of the present invention, such as surfactants, higher fatty acid derivatives, thermal polymerization initiators, inorganic particles, ultraviolet absorbers, organic titanium compounds, antioxidants, photoacid generators, anti-aggregation agents, phenolic compounds, other polymer compounds, plasticizers, and other auxiliary agents (e.g., antifoaming agents, flame retardants, etc.). By appropriately incorporating these components, it is possible to adjust properties such as film physical properties. For details of these components, please refer to, for example, the descriptions in paragraphs 0183 and after of JP 2012-003225 A (corresponding to paragraph 0237 of U.S. Patent Application Publication No. 2013 / 0034812 ), and the descriptions in paragraphs 0101 to 0104 and 0107 to 0109 of JP 2008-250074 A, the contents of which are incorporated herein by reference. When these additives are blended, the total content thereof is preferably 3% by mass or less of the solid content of the resin composition of the present invention.

[0230] [Surfactant] Various surfactants can be used as the surfactant, such as a fluorine-based surfactant, a silicone-based surfactant, a hydrocarbon-based surfactant, etc. The surfactant may be a nonionic surfactant, a cationic surfactant, or an anionic surfactant.

[0231] By adding a surfactant to the resin composition of the present invention, the liquid properties (particularly fluidity) of the coating liquid composition when prepared are further improved, and the uniformity of the coating thickness and the liquid saving can be further improved. That is, when a film is formed using a coating liquid containing a surfactant, the interfacial tension between the surface to be coated and the coating liquid is reduced, improving the wettability of the surface to be coated and the coatability of the surface to be coated. Therefore, it is possible to more suitably form a uniform film with small thickness unevenness.

[0232] Examples of fluorine-based surfactants include the compounds described in paragraph 0328 of WO 2021 / 112189, the contents of which are incorporated herein by reference. As the fluorine-based surfactant, fluorine-containing polymer compounds containing a repeating unit derived from a (meth)acrylate compound having a fluorine atom and a repeating unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups, propyleneoxy groups) can also be preferably used, and examples thereof include the following compounds.

[0233] The weight-average molecular weight of the above compound is preferably 3,000 to 50,000, and more preferably 5,000 to 30,000. As the fluorosurfactant, a fluorine-containing polymer having an ethylenically unsaturated group in the side chain can also be used. Specific examples include the compounds described in paragraphs 0050 to 0090 and 0289 to 0295 of JP 2010-164965 A, the contents of which are incorporated herein by reference. Commercially available products include Megafac RS-101, RS-102, and RS-718K manufactured by DIC Corporation.

[0234] The fluorine content in the fluorine-containing surfactant is preferably 3 to 40% by mass, more preferably 5 to 30% by mass, and particularly preferably 7 to 25% by mass. A fluorine-containing surfactant having a fluorine content within this range is effective in terms of uniformity of the thickness of the coating film and liquid saving, and also has good solubility in the composition.

[0235] Examples of silicone surfactants, hydrocarbon surfactants, nonionic surfactants, cationic surfactants, and anionic surfactants include the compounds described in paragraphs 0329 to 0334 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0236] The surfactant may be used alone or in combination of two or more. The content of the surfactant is preferably 0.001 to 2.0 mass %, more preferably 0.005 to 1.0 mass %, based on the total solid content of the composition.

[0237] [Inorganic Particles] Specific examples of inorganic particles include calcium carbonate, calcium phosphate, silica, kaolin, talc, titanium dioxide, alumina, barium sulfate, calcium fluoride, lithium fluoride, zeolite, molybdenum sulfide, and glass.

[0238] The average particle size of the inorganic particles is preferably 0.01 to 2.0 μm, more preferably 0.02 to 1.5 μm, even more preferably 0.03 to 1.0 μm, and particularly preferably 0.04 to 0.5 μm. The above average particle size of the inorganic particles is the primary particle size and also the volume average particle size. The volume average particle size can be measured, for example, by dynamic light scattering using a Nanotrac WAVE II EX-150 (manufactured by Nikkiso Co., Ltd.). If the above measurement is difficult, it can also be measured by centrifugal sedimentation light transmission method, X-ray transmission method, or laser diffraction / scattering method.

[0239] [Organotitanium Compound] When the resin composition contains an organotitanium compound, a resin layer having excellent chemical resistance can be formed even when cured at low temperatures.

[0240] Usable organic titanium compounds include those in which an organic group is bonded to a titanium atom via a covalent bond or an ionic bond. Specific examples of organic titanium compounds are shown below in I) to VII): I) Titanium chelate compounds: Titanium chelate compounds having two or more alkoxy groups are more preferred because they provide good storage stability to the resin composition and a good curing pattern. Specific examples include titanium bis(triethanolamine) diisopropoxide, titanium di(n-butoxide) bis(2,4-pentanedionate), titanium diisopropoxide bis(2,4-pentanedionate), titanium diisopropoxide bis(tetramethylheptanedionate), and titanium diisopropoxide bis(ethylacetoacetate). II) Tetraalkoxytitanium compounds: for example, titanium tetra(n-butoxide), titanium tetraethoxide, titanium tetra(2-ethylhexoxide), titanium tetraisobutoxide, titanium tetraisopropoxide, titanium tetramethoxide, titanium tetramethoxypropoxide, titanium tetramethylphenoxide, titanium tetra(n-nonyloxide), titanium tetra(n-propoxide), titanium tetrastearyloxide, titanium tetrakis[bis{2,2-(allyloxymethyl)butoxide}], etc. III) Titanocene compounds: for example, pentamethylcyclopentadienyltitanium trimethoxide, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluorophenyl)titanium, bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium, etc. IV) Monoalkoxytitanium compounds: for example, titanium tris(dioctylphosphate)isopropoxide, titanium tris(dodecylbenzenesulfonate)isopropoxide, etc. V) Titanium oxide compounds: for example, titanium oxide bis(pentanedionate), titanium oxide bis(tetramethylheptanedionate), phthalocyanine titanium oxide, etc.VI) Titanium tetraacetylacetonate compounds: for example, titanium tetraacetylacetonate, etc. VII) Titanate coupling agents: for example, isopropyl tridodecylbenzenesulfonyl titanate, etc.

[0241] Among these, from the viewpoint of better chemical resistance, the organic titanium compound is preferably at least one compound selected from the group consisting of I) titanium chelate compounds, II) tetraalkoxytitanium compounds, and III) titanocene compounds. In particular, titanium diisopropoxide bis(ethylacetoacetate), titanium tetra(n-butoxide), and bis(η5-2,4-cyclopentadien-1-yl)bis(2,6-difluoro-3-(1H-pyrrol-1-yl)phenyl)titanium are preferred.

[0242] It is also preferable to contain a compound represented by the following formula (T-1) as the organotitanium compound or in place of the organotitanium compound. In formula (T-1), M is titanium, zirconium, or hafnium, l1 is an integer of 0 to 2, l2 is 0 or 1, l1 + l2 × 2 is an integer of 0 to 2, m is an integer of 0 to 4, n is an integer of 0 to 2, l1 + l2 + m + n × 2 = 4, and R １１ are each independently a substituted or unsubstituted cyclopentadienyl group, a substituted or unsubstituted alkoxy group, or a substituted or unsubstituted phenoxy group; R １２ is a substituted or unsubstituted hydrocarbon group, R ２ are each independently a group containing a structure represented by the following formula (T-2), and R ３ are each independently a group containing a structure represented by the following formula (T-2), Ａ are each independently an oxygen atom or a sulfur atom. In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, * represents a bonding site to another structure, and # represents a bonding site to a metal atom.

[0243] In formula (T-1), from the viewpoint of storage stability of the composition, M is preferably titanium. In formula (T-1), an embodiment in which l1 and l2 are 0 is also one of the preferred embodiments of the present invention. In formula (T-1), m is preferably 2 or 4, and more preferably 2. In formula (T-1), n ​​is preferably 1 or 2, and more preferably 1. Here, it is also preferable that in formula (T-1), l1 and l2 are 0, and m is 0, 2, or 4.

[0244] In formula (T-1), from the viewpoint of the stability of the specific metal complex, R １１ is preferably a substituted or unsubstituted cyclopentadienyl ligand. １１ The cyclopentadienyl group, alkoxy group and phenoxy group in the formula (I) may be substituted, but an embodiment in which they are unsubstituted is also one of the preferred embodiments of the present invention.

[0245] In formula (T-1), R １２ is preferably a hydrocarbon group having 1 to 20 carbon atoms, and more preferably a hydrocarbon group having 2 to 10 carbon atoms. １２ The hydrocarbon group in may be either an aliphatic hydrocarbon group or an aromatic hydrocarbon group, but an aromatic hydrocarbon group is preferred. The aliphatic hydrocarbon group may be either a saturated aliphatic hydrocarbon group or an unsaturated aliphatic hydrocarbon group, but a saturated aliphatic hydrocarbon group is preferred. The aromatic hydrocarbon group is preferably an aromatic hydrocarbon group having 6 to 20 carbon atoms, more preferably an aromatic hydrocarbon group having 6 to 10 carbon atoms, and even more preferably a phenylene group. R １２ The substituent in R is preferably a monovalent substituent, such as a halogen atom. １２ When R is an aromatic hydrocarbon group, it may have an alkyl group as a substituent. １２ is preferably an unsubstituted phenylene group. １２ The phenylene group in is preferably a 1,2-phenylene group.

[0246] In formula (T-1), m is 2 or more, and R ２ If two or more are included,２ In formula (T-1), n ​​is 2 or more, and R ３ If two or more are included, ３ The structures may be the same or different.

[0247] In formula (T-2), X １ ~X ３ each independently represents -C(-*)= or -N=, and it is preferable that at least one represents -C(-*)=, and it is more preferable that at least two represent -C(-*)=.

[0248] Specific examples of the compound represented by formula (T-1) include compounds J-2 to J-5 in the examples, but are not limited to these.

[0249] When an organotitanium compound is contained, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the specific resin. When the content is 0.05 part by mass or more, the heat resistance and chemical resistance of the obtained cured pattern are improved, and when it is 10 parts by mass or less, the storage stability of the composition is improved.

[0250] When an organotitanium compound is contained, its content is preferably 0.05 to 10 parts by mass, and more preferably 0.1 to 2 parts by mass, relative to 100 parts by mass of the specific resin. When the content is 0.05 part by mass or more, the heat resistance and chemical resistance of the obtained cured pattern are improved, and when it is 10 parts by mass or less, the storage stability of the composition is superior.

[0251] [Antioxidant] By including an antioxidant as an additive, the elongation properties of the cured film and adhesion to metal materials can be improved. Examples of antioxidants include phenol compounds, phosphite ester compounds, and thioether compounds. Specific examples of antioxidants include the compounds described in paragraphs 0348 to 0357 of WO 2021 / 112189, the contents of which are incorporated herein by reference.

[0252] The content of the antioxidant is preferably 0.1 to 10 parts by mass, more preferably 0.5 to 5 parts by mass, per 100 parts by mass of the specific resin. By adding an amount of 0.1 part by mass or more, it is easy to obtain the effect of improving elongation properties and adhesion to metal materials even in high-temperature, high-humidity environments, and by adding an amount of 10 parts by mass or less, the sensitivity of the resin composition is improved, for example, through interaction with the photosensitizer. Only one type of antioxidant may be used, or two or more types may be used. When two or more types are used, it is preferable that the total amount thereof be within the above range.

[0253] Other additives include compounds described in paragraphs 0249 to 0282 and 0316 to 0358 of WO 2022 / 145355, the disclosures of which are incorporated herein by reference.

[0254] <Characteristics of Resin Composition> The viscosity of the resin composition of the present invention can be adjusted by the solid content concentration of the resin composition. ２ / s~12,000mm ２ / s is preferred, and 2,000 mm ２ / s~10,000mm ２ / s is more preferable, and 2,500 mm ２ / s~8,000mm ２ Within the above range, it is easy to obtain a highly uniform coating film. ２ If the thickness is more than 12,000 mm / s, it is easy to apply the coating to a thickness required for an insulating film for rewiring, for example. ２ If the viscosity is less than 1 / s, a coating film with excellent surface condition can be obtained.

[0255] <Restrictions on substances contained in the resin composition> The water content of the resin composition of the present invention is preferably less than 2.0% by mass, more preferably less than 1.5% by mass, and even more preferably less than 1.0% by mass. If it is less than 2.0%, the storage stability of the resin composition is improved. Methods for maintaining the water content include adjusting the humidity under storage conditions and reducing the porosity of the storage container during storage.

[0256] From the viewpoint of insulating properties, the metal content of the resin composition of the present invention is preferably less than 5 mass ppm (parts per million), more preferably less than 1 mass ppm, and even more preferably less than 0.5 mass ppm. Examples of metals include sodium, potassium, magnesium, calcium, iron, copper, chromium, and nickel, but metals contained as complexes of organic compounds and metals are excluded. When multiple metals are contained, the total amount of these metals is preferably within the above range.

[0257] Furthermore, examples of methods for reducing metal impurities unintentionally contained in the resin composition of the present invention include selecting raw materials with a low metal content as raw materials for constituting the resin composition of the present invention, filtering the raw materials for constituting the resin composition of the present invention, and lining the inside of the apparatus with polytetrafluoroethylene or the like to perform distillation under conditions that minimize contamination as much as possible.

[0258] Considering the use of the resin composition of the present invention as a semiconductor material, the content of halogen atoms is preferably less than 500 ppm by mass, more preferably less than 300 ppm by mass, and even more preferably less than 200 ppm by mass, from the viewpoint of wiring corrosion. In particular, those present in the form of halogen ions are preferably less than 5 ppm by mass, more preferably less than 1 ppm by mass, and even more preferably less than 0.5 ppm by mass. Examples of halogen atoms include chlorine atoms and bromine atoms. It is preferable that the total of chlorine atoms and bromine atoms, or chlorine ions and bromine ions, is within the above-mentioned range. Preferred methods for adjusting the content of halogen atoms include ion exchange treatment.

[0259] A conventionally known container can be used as a container for storing the resin composition of the present invention. For the purpose of preventing impurities from being mixed into the raw materials or the resin composition of the present invention, it is also preferable to use a multi-layer bottle whose inner wall is made of six types of six resin layers, or a bottle with a seven-layer structure made of six types of resin. Examples of such containers include the container described in JP 2015-123351 A.

[0260] (Jointed body) The joined body of the present invention is a joined body obtained by the method for producing a joined body of the present invention. The joined body of the present invention can be suitably used for applications such as the device of the present invention described below.

[0261] The method for producing a bonded body of the present invention includes the steps of: preparing a substrate A having a surface provided with an electrode; forming a polyimide-containing portion on the surface of the substrate A provided with the electrode; preparing a substrate B having a surface provided with an electrode; and bonding the surface of the substrate A having the polyimide-containing portion with the surface of the substrate B provided with the electrode; wherein the polyimide-containing portion forming step includes applying a resin composition containing polyimide to the surface of the substrate A provided with the electrode, and the imidization rate of the polyimide contained in the resin composition is 80% or more. Preferred aspects of the method for producing a bonded body of the present invention are the same as the preferred aspects of the method for producing a bonded body described above for the resin composition of the present invention. Furthermore, preferred aspects of the resin composition used in the method for producing a bonded body of the present invention are the same as the preferred aspects of the resin composition of the present invention described above.

[0262] (Device and Manufacturing Method Thereof) A device according to the present invention includes the bonded structure of the present invention. A manufacturing method for a device according to the present invention includes a manufacturing method for the bonded structure of the present invention. The device according to the present invention includes a semiconductor device, an electronic device, etc., and is preferably a semiconductor device or an electronic device. Examples of the device include the devices described in "Illustrated: All about Cutting-Edge Semiconductor Packaging Technology" edited by the Semiconductor New Technology Research Association, Industrial Research Association, pp. 8-19, 110-114, 160-165, and "Illustrated: All about Surface Treatment Technology" edited by the Surface Optics Research Institute, Kanto Gakuin University, Industrial Research Association, pp. 32-41, 56-59. Specific examples include an embodiment in which the polyimide-containing portion is used as an adhesive film that replaces underfill between chips, or an embodiment in which the polyimide-containing portion is used as a die-bonding film that secures chips. The manufacturing method for the bonded structure and the manufacturing method for the laminate according to the present invention can be widely applied to a variety of applications, such as the mounting of LED (light emitting diode) elements, the mounting of optical elements in flat panel displays, and the mounting of power semiconductor packages. Furthermore, for example, the bonded body manufacturing method and laminate manufacturing method of the present invention can also be suitably used for three-dimensional mounting of semiconductor elements provided with through-silicon vias (TSVs: Through Silicon Vias). FIG. 4 is a cross-sectional view schematically illustrating a three-dimensionally mounted device. In this embodiment, a laminate 101, in which multiple semiconductor elements (semiconductor chips) 101a-101d are stacked, is disposed on a wiring substrate 120. Each of the multiple semiconductor elements 101a-101d is made of a semiconductor wafer such as a silicon substrate. The laminate 101 has a structure in which a semiconductor element 101a without through-silicon electrodes is flip-chip bonded to semiconductor elements 101b-101d with through-silicon electrodes 102b-102d. The connection pads on the semiconductor elements with through-silicon electrodes are connected by metal bumps 103a, 103b, and 103c such as solder bumps. A resin layer 110 is formed in the gaps between each of the semiconductor elements 101a-101d. The bonded body manufacturing method of the present invention can be used to manufacture this laminate.That is, for example, at least one (preferably all) of the resin layers 110 can be the polyimide-containing portion in the above-described method for manufacturing a bonded body of the present invention. In this case, it is preferable to omit the solder bump. A surface electrode 120a is provided on one surface of the wiring substrate 120. An insulating layer 115 on which a rewiring layer 105 is formed is disposed between the wiring substrate 120 and the laminate (substrate / substrate laminate) 101. One end of the rewiring layer 105 is connected to an electrode pad formed on the surface of the semiconductor element 101d facing the rewiring layer 105 via a metal bump 103d, such as a solder bump. The other end of the rewiring layer 105 is connected to a surface electrode 120a of the wiring substrate via a metal bump 103e, such as a solder bump. A resin layer 110a is formed between the insulating layer 115 and the laminate 101. The method for manufacturing a bonded body of the present invention can also be used to bond this insulating layer 115 and the laminate 101. That is, for example, resin layer 110a can be the polyimide-containing portion described above. Furthermore, resin layer 110b is formed between insulating layer 115 and wiring substrate 120. The method for manufacturing a bonded body of the present invention can also be used to bond insulating layer 115 and wiring substrate 120. That is, for example, resin layer 110b can be the polyimide-containing portion described above.

[0263] The present invention will be explained in more detail below with reference to examples. The materials, amounts used, ratios, processing details, processing procedures, etc. shown in the following examples can be changed as appropriate without departing from the spirit of the present invention. Therefore, the scope of the present invention is not limited to the specific examples shown below. Unless otherwise specified, "parts" and "%" are based on mass.

[0264] <Polymer Synthesis> [Synthesis Example P-1: Synthesis of Resin (P-1)] 30.0 g (57.64 mmol) of 4,4'-(4,4'-isopropylidenediphenoxy)diphthalic anhydride was dissolved in 120 g of N-methylpyrrolidone (NMP). Subsequently, 5.138 g (24.2 mmol) of 4,4'-diamino-2,2'-dimethylbiphenyl and 5.235 g (24.2 mmol) of 4,4'-diamino-3,3'-dihydroxybiphenyl were dissolved in 100 g of NMP and added dropwise over 1 hour at a temperature of 10°C to 25°C. After stirring at 25°C for 30 minutes, 10 g of toluene was added and the mixture was reacted at 200°C for 4 hours under a nitrogen flow and then cooled to 25°C. Subsequently, 13.2 g (86.4 mmol) of 4-(chloromethyl)styrene, 16.6 g (120 mmol) of potassium carbonate, 1.66 g (12 mmol) of potassium iodide, and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical were added, and the mixture was reacted at 95°C for 15 hours. The mixture was then cooled to 25°C and diluted with 200 g of tetrahydrofuran. The reaction solution was then added dropwise to a mixture of 2.0 L of methanol and 0.5 L of water. The mixture was stirred for 15 minutes, and the polyimide resin was filtered. The resin was then reslurried in 1 L of water and filtered. It was then reslurried again in 1 L of methanol and filtered, and dried under reduced pressure at 40°C for 10 hours. Next, the dried resin was dissolved in 250 g of tetrahydrofuran, and 40 g of ion exchange resin (MB-1: manufactured by Organo Corporation) was added thereto. The mixture was stirred for 4 hours. The ion exchange resin was removed by filtration, and then the polyimide resin was precipitated in 2 liters of methanol and stirred for 15 minutes. The polyimide resin was collected by filtration and dried at 45°C under reduced pressure for 1 day to obtain resin (P-1). The weight average molecular weight of the obtained resin (P-1) was 24,600 and the number average molecular weight was 9,900. Resin (P-1) is a resin having a repeating unit represented by the following formula (P-1). The structure of the repeating unit is: １The molecular weight was determined from H-NMR spectra. In the following structures, the subscripts of the repeating units indicate the molar ratio of each repeating unit. In the following synthesis examples, unless otherwise specified, the weight-average molecular weight and number-average molecular weight were measured by the following method. GPC measurements were performed using a high-speed GPC system HLC-8420GPC (manufactured by Tosoh Corporation) with a TSK guard column, a Super AW-H (4.6 mm x 35 mm), and two TSKgel Super AWM-H (4.6 mm x 150 mm) columns connected in series. A 0.01 mol / L solution of lithium bromide in NMP (N-methyl-2-pyrrolidone) was used as the eluent. The imidization ratio was measured by the following method. The resin was dissolved in γ-butyrolactone, diluted to a viscosity of 2,000 mPa s, and applied to a silicon wafer by spin coating to form a resin layer. The silicon wafer to which the resin layer was applied was dried on a hot plate at 110°C for 5 minutes, yielding a resin layer with a uniform thickness of about 15 µm after film formation on the silicon wafer. The resin layer was measured by the ATR method using a Nicoleti S20 (manufactured by Thermofisher) in a measurement range of 4000 to 700 cm. －１ The measurement was carried out 50 times. －１ Around (1350-1450 cm －１ (If there are multiple peaks, the peak with the greatest intensity) and 1500 cm －１ Around (1460-1550 cm －１ The imidization index B was calculated in the same manner for the resin layer obtained by heating the resin layer at a heating rate of 10°C / min under a nitrogen atmosphere and then heating at 350°C for 1 hour, and the imidization rate of the resin was calculated by dividing the imidization index A by the imidization index B. Hereinafter, the subscripts in parentheses indicating repeating units indicate the molar ratio of each repeating unit.

[0265] [Synthesis Example P-2: Synthesis of Resin (P-2)] Resin (P-2) was synthesized in the same manner as in Synthesis Example P-1, except that the procedure of "adding 13.2 g (86.4 mmol) of 4-(chloromethyl)styrene, 16.6 g (120 mmol) of potassium carbonate, 1.66 g (12 mmol) of potassium iodide, and 0.08 g of 2,2,6,6-tetramethylpiperidine 1-oxyl free radical and reacting at 95°C for 15 hours" was omitted. Resin (P-2) is a resin having a repeating unit represented by the following formula (P-2). The structure of the repeating unit is: １ The molar ratio was determined from the H-NMR spectrum. In the following structure, the subscripts of the repeating units indicate the molar ratio of each repeating unit.

[0266] Synthesis Example CP-1: Synthesis of Resin (CP-1) 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic anhydride (dried at 140°C for 12 hours), 16.8 g (129 mmol) of 2-hydroxyethyl methacrylate, 0.05 g of hydroquinone, 20.4 g (258 mmol) of pyridine, and 100 g of diglyme were mixed and stirred at 60°C for 18 hours to produce a diester of 4',4-oxydiphthalic acid and 2-hydroxyethyl methacrylate. The reaction mixture was then cooled, and 16.12 g (135.5 mmol) of SOCl was added. ２ was added over 2 hours. Next, a solution of 4,4'-diaminodiphenyl ether dissolved in 100 mL of N-methylpyrrolidone was added dropwise to the reaction mixture over 2 hours while adjusting the temperature to the range of -5 to 0°C. The reaction mixture was reacted at 0°C for 1 hour, after which 70 g of ethanol was added and stirred at room temperature for 1 hour. Next, the polyimide precursor was precipitated in 5 liters of water, and the water-polyimide precursor mixture was stirred at 5,000 rpm for 15 minutes. The polyimide precursor was removed by filtration, stirred again in 4 liters of water for 30 minutes, and filtered again. The resulting polyimide precursor was then dried under reduced pressure for 2 days. The weight-average molecular weight of this resin (CP-1) was 20,000. Resin (CP-1) is a resin having a repeating unit represented by the following formula (CP-1). The structure of the repeating unit is: １The molar ratio was determined from the H-NMR spectrum. In the following structure, the subscripts of the repeating units indicate the molar ratio of each repeating unit.

[0267] Synthesis Example CP-2: Synthesis of Resin (CP-2) 9.15 g (29.5 mmol) of 4,4'-oxydiphthalic dianhydride (ODPA) and 6.03 g (20.5 mmol) of 3,3',4,4'-biphenyltetracarboxylic dianhydride were placed in a reaction vessel, followed by the addition of 13.4 g of 2-hydroxyethyl methacrylate (HEMA) and 100 mL of γ-butyrolactone. 7.91 g of pyridine was added with stirring at room temperature to obtain a reaction mixture. After the reaction ceased to generate heat, the mixture was allowed to cool to room temperature and allowed to stand for an additional 16 hours. Next, under ice cooling, a solution of 20.6 g (99.9 mmol) of dicyclohexylcarbodiimide (DCC) in 30 mL of γ-butyrolactone was added to the reaction mixture over 40 minutes with stirring. Next, a suspension of 9.3 g (46 mmol) of 4,4'-diaminodiphenyl ether (DADPE) in 350 mL of γ-butyrolactone was added over 60 minutes with stirring. After further stirring at room temperature for 2 hours, 3 mL of ethyl alcohol was added and stirred for 1 hour. 100 mL of γ-butyrolactone was then added. The precipitate formed in the reaction mixture was removed by filtration to obtain a reaction solution. The resulting reaction solution was added to 3 liters of ethyl alcohol to produce a precipitate consisting of a crude polymer. The produced crude polymer was collected by filtration and then vacuum dried to obtain a powdery resin (CP-2). The weight-average molecular weight (Mw) of this polymer was measured and found to be 27,900. Hereinafter, for resins with an imidization rate of less than 100%, for convenience, two types are described: a repeating unit having two imidizable moieties, and a structure in which two imidizable moieties form an imide ring. However, in reality, repeating units in which only one of the two imidizable moieties forms an imide ring and the other does not form an imide ring are also included. This also applies to the resins described below. Therefore, the molar ratio is based solely on the assumption that only the following repeating units are present. In reality, repeating units in which only one imide ring forms and the other does not form an imide ring may be included, as long as the total amount of imide ring structures remains the same. Furthermore, the proportion of structures forming imide rings in a resin is described in this specification as the imidization rate (%). This also applies to the other resins described below.

[0268] Synthesis Example P-3: Synthesis of Resin (P-3) 23.88 g (76.8 mmol) of 4,4'-oxydiphthalic anhydride was dissolved in 165 g of N-methylpyrrolidone (NMP). A solution of 14.31 g (71.5 mmol) of 4,4'-diaminodiphenyl ether dissolved in 115 g of NMP was added dropwise to the solution over 1 hour at a temperature of 0 to 10°C. After returning to room temperature, stirring was continued for an additional 2 hours. 6.35 g (30.8 mmol) of N,N'-dicyclohexylcarbodiimide was added, followed by 4.01 g (30.8 mmol) of 2-hydroxyethyl methacrylate, and stirring was continued at 40°C for 12 hours. After completion of the reaction, 9.81 g (96.1 mmol) of acetic anhydride and 12.2 g (153.7 mmol) of pyridine were added at room temperature, and the reaction was continued for 4 hours at 80°C. After the reaction was completed and the mixture was returned to room temperature, the resin was precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (P-3). The weight average molecular weight (Mw) of the resulting resin (P-3) was 25,500. Resin (P-3) is presumed to have a structure containing a repeating unit represented by the following formula (P-3). The imidization rate (%) of resin (P-3) was 80%.

[0269] [Synthesis Examples P-4 to P-7: Synthesis of Resins (P-4) to (P-7)] Resins (P-4) to (P-7) were synthesized in the same manner as in Synthesis Example P-1, except that the raw materials were changed appropriately. Resins (P-4) to (P-7) are resins having repeating units represented by the following formulas (P-4) to (P-7), respectively. The structures of the repeating units are as follows: １ The molar ratio was determined from the H-NMR spectrum. In the following structure, the subscripts of the repeating units indicate the molar ratio of each repeating unit.

[0270] Synthesis Example P-8: Synthesis of Resin (P-8) 23.88 g (76.8 mmol) of 4,4'-oxydiphthalic anhydride was dissolved in 165 g of N-methylpyrrolidone (NMP). A solution of 14.31 g (71.5 mmol) of 4,4'-diaminodiphenyl ether dissolved in 115 g of NMP was added dropwise to the solution over 1 hour at a temperature of 0 to 10°C. After returning to room temperature, stirring was continued for an additional 2 hours. 3.18 g (15.4 mmol) of N,N'-dicyclohexylcarbodiimide was added, followed by 2.00 g (15.4 mmol) of 2-hydroxyethyl methacrylate, and stirring was continued at 40°C for 12 hours. After completion of the reaction, 9.81 g (96.1 mmol) of acetic anhydride and 12.2 g (153.7 mmol) of pyridine were added at room temperature, and the reaction was continued for 4 hours at 80°C. After the reaction was completed and the mixture was returned to room temperature, the resin was precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (P-8). The weight average molecular weight (Mw) of the resulting resin (P-8) was 26,400. Resin (P-8) has a structure containing a repeating unit represented by the following formula (P-8): １ The imidization rate (%) of the resin (P-8) was confirmed by H-NMR and was found to be 90%.

[0271] Synthesis Example CP-3: Synthesis of Resin (CP-3) 23.88 g (76.8 mmol) of 4,4'-oxydiphthalic anhydride was dissolved in 165 g of N-methylpyrrolidone (NMP). A solution of 14.31 g (71.5 mmol) of 4,4'-diaminodiphenyl ether dissolved in 115 g of NMP was added dropwise to the solution over 1 hour at a temperature of 0 to 10°C. After returning to room temperature, stirring was continued for an additional 2 hours. 9.54 g (46.2 mmol) of N,N'-dicyclohexylcarbodiimide was added, followed by 6.00 g (46.2 mmol) of 2-hydroxyethyl methacrylate, and stirring was continued at 40°C for 12 hours. After completion of the reaction, 9.81 g (96.1 mmol) of acetic anhydride and 12.2 g (153.7 mmol) of pyridine were added at room temperature, and the reaction was continued for 4 hours at 80°C. After the reaction was completed and the mixture was returned to room temperature, the resin was precipitated in 4 L of water, and the water-resin mixture was stirred at 500 rpm for 15 minutes. The resin was collected by filtration, stirred again in 4 L of water for 30 minutes, and filtered again. The resulting resin was then dried under reduced pressure at 45°C for 2 days to obtain resin (CP-3). The weight average molecular weight (Mw) of the resulting resin (CP-3) was 25,900. Resin (CP-3) was found to have a structure containing a repeating unit represented by the following formula (CP-3): １ The imidization rate (%) of the resin (CP-3) was confirmed by H-NMR and was found to be 70%.

[0272] Synthesis Example P-9: Synthesis of Resin (P-9) 20.0 g (64.5 mmol) of 4,4'-oxydiphthalic dianhydride, 12.5 g (57.6 mmol) of 4,4'-diamino-3,3'-dihydroxybiphenyl, and 1.52 g (13.9 mmol) of 4-aminophenol were dissolved in 125 ml of NMP and stirred at 200°C for 3 hours under a nitrogen atmosphere to obtain a polyimide. Next, 0.1 g of TEMPO (2,2,6,6-tetramethylpiperidine 1-oxyl) and 30.0 g (193 mmol) of MOI (2-isocyanatoethyl methacrylate) were added at room temperature, and the mixture was heated to 60°C. After that, 0.1 g of Neostan U-600 (Nitto Kasei Co., Ltd., inorganic bismuth) was added and stirred for 3 hours. 375 ml of THF was added to the obtained polyimide solution, and the mixture was added dropwise to 1500 ml of methanol to precipitate the polymer. The polymer collected by filtration was dried under reduced pressure at 40°C for 1 day to obtain resin (P-9) as a powder. Resin (P-9) is a resin having a repeating unit represented by the following formula (P-9). The structure of the repeating unit is: １ The molar ratio was determined from the H-NMR spectrum. In the following structure, the subscripts of the repeating units indicate the molar ratio of each repeating unit.

[0273] [Synthesis Example P-10: Synthesis of Resin (P-10)] Resin (P-10) was synthesized in the same manner as in Synthesis Example P-9, except that the raw materials were changed appropriately. Resin (P-10) is a resin having a repeating unit represented by the following formula (P-10). The structure of the repeating unit is: １ The molar ratio was determined from the H-NMR spectrum. In the following structure, the subscripts of the repeating units indicate the molar ratio of each repeating unit.

[0274]

[0275] Examples and Comparative Examples In each example, the components listed in the table below were mixed to obtain a resin composition. In each comparative example, the components listed in the table below were mixed to obtain a comparative composition. Specifically, the content (amount) of each component listed in the table other than the solvent was the amount (parts by mass) listed in the "Parts by Mass" column in each column of the table. The solvent content (amount) was adjusted so that the solids concentration of the composition was the value (% by mass) of "Solids Concentration" in the table, and the ratio (mass ratio) of the content of each solvent to the total mass of solvent was the ratio listed in the "Solvent Ratio" column in the table. The obtained resin composition and comparative composition were pressure-filtered using a polytetrafluoroethylene filter with a pore width of 0.5 μm. In the table, "-" indicates that the composition did not contain the corresponding component.

[0276]

[0277]

[0278]

[0279]

[0280]

[0281] [Resins] P-1 to P-10: Resins (P-1) to (P-10) synthesized above CP-1 to CP-3: Resins (CP-1) to (CP-3) synthesized above

[0282] [Polymerizable compounds] B-1: NK Ester 4G (manufactured by Shin-Nakamura Chemical Co., Ltd.) B-2: NK Ester TMPT (manufactured by Shin-Nakamura Chemical Co., Ltd.) B-3: Viscoat #802 (manufactured by Osaka Organic Chemical Industry Ltd.) B-4: A-DCP (manufactured by Shin-Nakamura Chemical Co., Ltd.) B-5: NK Ester A-9300S (manufactured by Shin-Nakamura Chemical Co., Ltd.) B-6: KAYARAD DPHA (manufactured by Nippon Kayaku Co., Ltd.)

[0283] [Photopolymerization initiator] C-1: Perbutyl P (manufactured by NOF Corporation) C-2: Perbutyl L (manufactured by NOF Corporation) C-3: Percumyl D (manufactured by NOF Corporation) C-4: Perbutyl D (manufactured by NOF Corporation) C-5: Perhexyne 25B (manufactured by NOF Corporation) C-6: IrgacureOXE01 (manufactured by BASF) C-7: TR-PBG-304 (manufactured by Changzhou New Power Electronic Materials Co., Ltd.) C-8: TR-PBG-3057 (manufactured by Changzhou New Power Electronic Materials Co., Ltd.) C-9: Ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(O-acetyloxime)

[0284] [Thermal base generator] G-1: Compound having the following structure G-2: Compound having the following structure G-3: Compound having the following structure G-4: Compound having the following structure

[0285] [Polymerization inhibitor] A-1: ​​Compound having the following structure A-2: N,N'-hexane-1,6-diylbis[3-(3,5-di-tert-butyl-4-hydroxyphenyl)propionamide]

[0286] [Silane coupling agents] D-1: Compound having the following structure: D-2: X-12-1293 (manufactured by Shin-Etsu Chemical Co., Ltd.) D-3: KR-513 (manufactured by Shin-Etsu Chemical Co., Ltd.) D-4: Compound having the following structure: D-5: Compound having the following structure: D-6: Compound having the following structure: D-7: Compound having the following structure: D-8: Compound having the following structure: D-9: 50% methanol solution of 3-ureidopropyltriethoxysilane

[0287] [Migration inhibitor] E-1: Compound having the following structure E-2: Compound having the following structure E-3: Compound having the following structure E-4: Compound having the following structure

[0288] [Surfactant] F-1: BYK-333 F-2: Megafac F-787-F

[0289] [Organotitanium compounds (other additives)] J-1: TC-750 (Matsumoto Fine Chemical) J-2: Compound having the following structure J-3: Compound having the following structure J-4: Compound having the following structure J-5: Compound having the following structure

[0290] [Solvents] H-1: γ-butyrolactone (GBL) H-2: dimethyl sulfoxide (DMSO) H-3: ethyl lactate (EL) H-4: N-methyl-2-pyrrolidone (NMP) H-5: γ-valerolactone (GVL) H-6: cyclopentanone H-7: 3-methoxy-N,N-dimethylpropanamide H-8: anisole

[0291] <Preparation of Substrates> Pillar substrates with the following sizes and metal types were prepared by plating. (Substrate a) Pitch: 45 μm, copper / tin pillar diameter: 20 μm, copper / tin pillar height: 2 / 8 μm, silicon wafer, copper, and tin formed in this order. (Substrate b) SiO 5 μm thick on an 8-inch silicon wafer. ２ A film was formed by CVD (chemical vapor deposition), and a hole pattern with a pitch of 45 μm and a diameter of 20 μm was formed in a square array by photolithography and dry etching. Thin layers of titanium and copper were then formed in that order on the surface on which the hole pattern was formed by CVD, and the hole pattern was filled with copper by plating. Then, the SiO ２The film, along with the internal copper, was polished by CMP to a thickness of 3 μm. (Substrate c) A 5 μm thick SiN film was formed on an 8-inch silicon wafer by CVD (chemical vapor deposition), and a hole pattern with a pitch of 45 μm and a diameter of 20 μm was formed in a square array by photolithography and dry etching. Thin layers of titanium and copper were then formed in sequence on the surface with the hole pattern by CVD, and the hole pattern was filled with copper by plating. The SiN film with the copper-filled pattern was then polished by CMP to a thickness of 3 μm, along with the internal copper. (Substrate d) A 5 μm thick SiCN film was formed on an 8-inch silicon wafer by CVD (chemical vapor deposition), and a hole pattern with a pitch of 45 μm and a diameter of 20 μm was formed in a square array by photolithography and dry etching. After forming thin layers of titanium and copper on the surface with the hole pattern by CVD, the hole pattern was filled with copper by plating.Then, the SiCN film with the copper-filled pattern and the copper inside were polished by CMP to a thickness of 3 μm.

[0292] The details of the pillar substrate thus fabricated are described below. FIG. 5 is a schematic cross-sectional view of the above (substrate a). In FIG. 5, 10 denotes the substrate, 12 denotes the electrode, and the electrode 12 is formed from a pillar (conductive path) 14 formed of tin and a pillar (electrode portion) 16 formed of copper. In FIG. 5, the arithmetic mean value of the diameter d of each pillar is the pillar diameter, which is 20 μm in (substrate a). In FIG. 5, the arithmetic mean value of the spacing p between pillars in each pillar is the pitch, which is 45 μm in (substrate a). In FIG. 5, the arithmetic mean value of the height h1 of the conductive path in each pillar is the tin pillar height, which is 8 μm in (substrate a). In FIG. 5, the arithmetic mean value of the height h2 of the electrode in each pillar is the copper pillar height, which is 2 μm in (substrate a).

[0293] <Preparation of Substrate / Substrate Laminate (Joint)> [Preparation of Substrate A Having a Polyimide-Containing Portion, Evaluation of Flatness, and Evaluation of Polishing Rate] In Examples 1 to 68 and Comparative Examples 1 to 2 and 4, each composition listed in the table was applied to the above-mentioned substrate a to a film thickness of 15 μm and baked at 100°C for 5 minutes. Further heating was performed at the temperature and time conditions listed in the "Cure Temperature (°C)" and "Cure Time (min)" columns in the table to obtain a polyimide-containing portion. In Example 69 and Comparative Example 3, the resin composition was applied to a PET film using a comma coater, and then heated at 100°C for 5 minutes to remove the solvent, forming a 15 μm-thick resin film. This resulted in a resin film with a temporary support. The resin film was attached to the electrode-bearing surface of the above-mentioned substrate a, laminated by applying a pressure of 0.2 MPa, and the temporary support (PET film) was peeled off to transfer the resin film. Further, the polyimide-containing portion was obtained by heating under the temperature and time conditions shown in the "Cure temperature (°C)" and "Cure time (min)" columns in the table. The ratio of the difference in thickness between the electroded and non-electroded portions on the surface of the obtained polyimide-containing portion to the thickness of the non-electroded portions was measured using a DEKTAK (manufactured by Bruker), and the flatness was evaluated according to the following evaluation criteria. The evaluation results are shown in the "Flatness after curing (before polishing)" column in the table. -Evaluation criteria- S: 5% or less. A: More than 5% and 10% or less. B: More than 10% and 20% or less. C: More than 20% and 30% or less. D: More than 30%.

[0294] The imidization rate of the polyimide in the polyimide-containing portion was measured using the same method as described above and reported in the "Imidization rate after curing process" column. The values ​​in the table are in %. Subsequently, in the examples where "Alumina" or "Silica" is listed in the "Polishing Method" column of the table, the surface of the polyimide-containing portion was then planarized using CMP (Chemical Mechanical Polishing) manufactured by Fujikoshi Machinery Co., Ltd., to leave a residual film of 5 μm, thereby obtaining a substrate A having a polyimide-containing portion. In the examples where "Alumina" is listed in the "Polishing Method" column of the table, an alumina slurry (Polifine A100-Type MX manufactured by Kemet Japan) was used, and in the examples where "Silica" is listed, a silica slurry was used. In the examples where "Grind" is listed in the "Polishing Method" column of the table, the surface of the polyimide-containing portion was planarized using a Surface Planner DAS8920 manufactured by DISCO Corporation to leave a residual film of 5 μm, thereby obtaining a substrate A having a polyimide-containing portion. The polishing rate (nm / min) was calculated from the amount polished and the time required for polishing, and the polishing rate was evaluated according to the following evaluation criteria. The evaluation results are shown in the "polishing rate" column in the table. -Evaluation criteria- A: The polishing rate was 200 nm / min or more. B: The polishing rate was 100 nm / min or more and less than 200 nm / min. C: The polishing rate was less than 100 nm / min.

[0295] [Preparation of Substrate B] In the examples where "Polyimide" is listed in the "Material of the insulating film on the substrate B side" column of the table, the same composition as in the preparation of the substrate A having a polyimide-containing portion described above was used, and substrate B was obtained as a substrate having a polyimide-containing portion by the same method. ２ In the examples where "SiN" is written in the "Material of insulating film on substrate B side" column of the table, the above-mentioned substrate b was used as substrate B. In the examples where "SiCN" is written in the "Material of insulating film on substrate B side" column of the table, the above-mentioned substrate c was used as substrate B.

[0296] [Evaluation of Bonding and Adhesion] Substrate A and substrate B were then cut into 5 mm squares using a dicing machine to prepare chips, which were then bonded using a flip chip bonder manufactured by Toray Engineering Co., Ltd. under the conditions described in the "Bonding Temperature" and "Bonding Time" columns in the table to obtain bonded structures. The applied pressure was 30 N. For each of the bonded structures obtained, the maximum peel resistance (kg / cm) of a 7 mm x 7 mm size specimen was measured using a shear tool using a Condor Sigma die tester manufactured by XYZTEC Corporation. ２ ) was measured. Five test pieces were prepared for each level, and measurements were taken five times for each level, with the arithmetic average value being used. The maximum peel resistance was evaluated using the following four levels. The evaluation results are shown in the "Adhesion" column in the table. It can be said that the greater the maximum peel resistance, the better the adhesion of the bonded body. A: The maximum peel resistance was 20 MPa or more. B: The maximum peel resistance was 10 MPa or more and less than 20 MPa. C: The maximum peel resistance was less than 10 MPa.

[0297] The above results show that the use of the resin composition of the present invention allows for the production of cured products with excellent surface smoothness. In contrast, when P-3 or P-4, in which the resin imidization rate is less than 80%, is used, the surface smoothness of the resulting cured products is poor.

[0298] DESCRIPTION OF SYMBOLS 1 Substrate A (base substrate, daughter chip) 1x Silicon wafer 1y Polyimide-containing portion-arranged substrate 1z Laminate 2 Substrate B (mother chip) 2a Surface of second polyimide-containing portion in substrate B 2x Silicon wafer 2y Through-hole electrode 31 Electrode (metal portion) 31a Tip of electrode 32 Electrode (metal portion) 4 Resin composition layer 4a Surface of polyimide-containing portion (before planarization) 4b Surface of polyimide-containing portion (after planarization) 41 Polyimide-containing portion 42 Second polyimide-containing portion 51 Polyimide-containing portion 8 Electronic circuit region 10 Substrate 12 Electrode A 14 Conductive path 16 Electrode portion 81 Electronic circuit 90 Semiconductor device 100 Joint 101a to 101d Semiconductor element 101 Joint 102b to 102d Through-hole electrode 103a to 103e Metal bumps 105 Rewiring layer 110, 110a, 110b Resin layer 115 Insulating layer 120 Wiring substrate 120a Surface electrode 200 Semiconductor device d Pillar diameter p Pillar spacing h Pillar height h1 Conductive path height h2 Electrode height

Claims

providing a substrate A having a surface provided with an electrode; a polyimide-containing portion forming step of forming a polyimide-containing portion on the electrode-provided surface of the substrate A; providing a substrate B having a surface provided with electrodes; and a bonding step of bonding a surface of the substrate A having the polyimide-containing portion to a surface of the substrate B having the electrode, The resin composition is used in a method for producing a bonded body, wherein the polyimide-containing portion forming step includes applying a resin composition to a surface of the substrate A that includes the electrode, The resin is a polyimide, The imidization rate of the resin is 80% or more. Resin composition. 　 The resin composition according to claim 1 , further comprising a polymerizable compound and a polymerization initiator. 　 The resin composition according to claim 2 , wherein the polymerization initiator is a thermal polymerization initiator. 　 The resin composition according to claim 2 , wherein the polymerization initiator is a photopolymerization initiator. 　 The resin composition according to any one of claims 1 to 4, wherein the resin has a polymerizable group. 　 The resin composition according to any one of claims 1 to 4, wherein the resin has a repeating unit represented by the following formula (1-1): In formula (1-1), X １ includes a structure in which two or more hydrogen atoms have been removed from a structure represented by any one of formula (V-1), formula (V-2), formula (V-3), formula (V-5), and formula (V-8), and Y １ is a divalent organic group. In formula (V-2), R Ｘ１ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group, In formula (V-3), R Ｘ２ and R Ｘ３ each independently represents a hydrogen atom or a substituent, R Ｘ２ and R Ｘ３ may be bonded to form a ring structure, In formula (V-8), R Ｘ５ are each independently a hydrogen atom, an alkyl group, or a halogenated alkyl group. 　 In the formula (1-1), Y １ The resin composition according to claim 6, wherein has a group containing an ethylenically unsaturated bond. 　 providing a substrate A having a surface provided with an electrode; a polyimide-containing portion forming step of forming a polyimide-containing portion on the electrode-provided surface of the substrate A; providing a substrate B having a surface provided with electrodes; and a bonding step of bonding a surface of the substrate A having a polyimide-containing portion to a surface of the substrate B having the electrodes, the polyimide-containing portion forming step includes applying a resin composition containing polyimide to the electrode-provided surface of the substrate A; the imidization rate of the polyimide contained in the resin composition is 80% or more; A method for manufacturing a bonded body. 　 The method further includes a planarization step of planarizing the surface of the polyimide-containing portion of the substrate A, The method for manufacturing a bonded body according to claim 8 , further comprising the polyimide-containing portion forming step, the planarizing step, and the bonding step in this order. 　 The method for producing a bonded body according to claim 8 or 9, wherein the imidization rate of the polyimide in the polyimide-containing portion forming step is 90% or more. 　 The method for producing a bonded body according to claim 8 or 9, wherein the resin composition is applied by coating in the polyimide-containing portion forming step. 　 a second polyimide-containing portion forming step of forming a second polyimide-containing portion on the electrode-provided surface of the substrate B; The method includes the second polyimide-containing portion forming step and the bonding step in this order. The method for producing the bonded body according to claim 8 or 9. 　 A bonded body produced by the method of claim 8 or 9. 　 A method for manufacturing a device, comprising the method for manufacturing a bonded structure according to claim 8 or 9.

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