High-voltage spiral voltage multiplier

Abstract

Disclosed in the present invention is a high-voltage spiral voltage multiplier, comprising an outer metal film, an inner metal film, a first insulating film and a second insulating film. The outer metal film and the inner metal film are of a spiral double-wire winding structure; the first insulating film is arranged between the outer metal film and the inner metal film; the second insulating film is arranged between the inner metal film and the outer metal film; the outer metal film and the inner metal film are of the spiral double-wire winding structure to form N turns of winding; and the central positions of any two adjacent turns differ by at least a set offset distance in the axial direction. In the present invention, the spiral winding structure is optimized, the insulation distance is increased, the surface insulation effect is improved, components do not need to be added or deleted, and the winding processing difficulty is basically not improved compared with conventional solutions. In addition, the present solution has scalability, and the offset distance and offset direction of the winding structure can be flexibly adjusted on the basis of actual structure sizes, thereby exerting the optimal insulation effect of the winding structure and reducing the risk of flashover.

Description

A high-pressure spiral voltage multiplier Technical Field

[0001] This invention relates to the field of high-voltage pulse generation, and in particular to a high-voltage spiral voltage multiplier. Background Technology

[0002] In the process of progressively amplifying pulse power, a high-voltage pulse generator, which plays a triggering and control role, is indispensable. To obtain a fast-rising-edge high-voltage pulse in the hundreds of kV range, a pulse capacitor can be used to amplify the output through a pulse transformer. However, this method limits the leading edge due to the long response delay of the pulse transformer core. Alternatively, a high-voltage pulse capacitor can be directly discharged. This method generally requires multiple pre-stage pulse generators for progressive amplification, which increases the trigger delay time and jitter of the device, reducing its reliability. Using a spiral voltage multiplier as the high-voltage pulse drive source, with an operating voltage of several kV to tens of kV, and multiplying by tens of turns, a fast-rising-edge high-voltage pulse in the hundreds of kV range can be obtained.

[0003] A high-voltage spiral voltage multiplier is a capacitor-storage type high-voltage nanosecond pulse generator. Its principle is shown in Figure 1. It consists of a long, double-wire winding wound in a spiral shape, which simultaneously serves as the primary energy storage capacitor, step-up transformer, secondary energy storage capacitor, and transmission line. The middle winding of the double-wire winding is charged to a set voltage U0. The voltage amplitudes of the inner and outer windings are the same, but their polarities are opposite, resulting in a zero output voltage. When the primary switch S is closed, electromagnetic waves propagate along the outer end of the long winding to the inner end, connecting the capacitance formed between adjacent spiral turns in series. When the inner end is open, the electromagnetic waves are reflected, causing the voltage polarity of the long winding transmission line to reverse, becoming the same as the outer transmission line. The voltages are superimposed, and the output voltage is ηnU0, where η is the voltage superposition efficiency and n is the number of turns in the winding. This type of spiral voltage multiplier has the advantages of short system delay, low jitter, and low trigger voltage. It can be used as a pre-stage trigger unit for 100kV high-voltage pulse generators, as the electrical insulation requirements for 100kV and above are correspondingly higher. Interlayer surface insulation is a weak point in the insulation of helical voltage multipliers. Conventional winding methods involve parallel winding, resulting in a short surface distance, which makes the insulation prone to flashover, causing equipment failure and reducing equipment life. However, simply increasing the surface distance cannot meet other performance requirements. Summary of the Invention

[0004] The purpose of this invention is to overcome the shortcomings of existing spiral voltage multipliers, such as short interlayer surface distance, easy insulation flashover, device failure, and reduced device life, and to provide a high-voltage spiral voltage multiplier.

[0005] The objective of this invention is achieved through the following technical solution: A high-voltage spiral voltage multiplier includes an outer metal film, an inner metal film, a first insulating film, and a second insulating film. The outer and inner metal films are spirally wound in a double-wire structure. A first insulating film is provided between the outer and inner metal films, and a second insulating film is provided between the inner metal film and its adjacent outer metal films. The outer and inner metal films are spirally wound in a double-wire structure forming N turns, with the center positions of any two adjacent turns differing by at least a predetermined offset distance in the axial direction. The equivalent capacitance between the outer and inner metal films is adjusted by adjusting the parameters of the outer metal film, inner metal film, first insulating film, and second insulating film. The difference between the adjusted equivalent capacitance and the capacitance where the center position is not offset is less than a predetermined threshold.

[0006] Conventional parallel winding methods, with their short inter-turn insulation distances, are prone to surface flashover. The surface flashover voltage is proportional to the insulation distance; a larger insulation distance reduces the likelihood of surface flashover. The insulation distance refers to the possible path distance for surface flashover between the innermost and outermost electrodes of the winding structure. In this design, because the center positions of any two adjacent turns differ by at least a predetermined offset distance in the axial direction, the insulating film between the two metal layers protrudes outwards, lengthening the inter-turn surface distance. Therefore, the insulation distance between the two turns is significantly increased, increasing the insulation margin and reducing the risk of flashover. Since the thickness of the metal and insulating films is on the micrometer scale, the winding radius during winding is much larger than the thickness of the metal and insulating films and the offset distance. Furthermore, the metal and insulating films have a certain degree of extensibility or elasticity, thus meeting the physical winding requirements of this design. Simultaneously, this design adjusts the equivalent capacitance between the outer and inner metal films, avoiding the situation where the equivalent capacitance of the winding structure of this invention is reduced compared to existing technologies, which could affect the performance or normal operation of the high-voltage spiral voltage multiplier.

[0007] Preferably, in the N-turn winding, the center positions of any two adjacent turns are offset in the same direction.

[0008] Preferably, the N-turn winding includes an upper half and a lower half, each of which includes N / 2 turns. In the upper half, the center positions of any two adjacent turns are offset in the same direction, and in the lower half, the center positions of any two adjacent turns are offset in the same direction. The center positions of the upper half and the lower half are offset in opposite directions.

[0009] Preferably, the N-turn winding comprises M sections, in which the center positions of any two adjacent turns in each section are offset in the same direction, and the center positions of any two adjacent sections are offset in opposite directions.

[0010] Preferably, the center positions of any two adjacent turns are offset by an equal distance within a predetermined offset distance in the axial direction.

[0011] Preferably, in the N-turn winding, the center positions of any two adjacent turns are not unequal in the axial direction, and the direction of the center position offset of any two adjacent turns is the same as or opposite to the direction of the center position offset of any other two adjacent turns.

[0012] Preferably, the equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the helical wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the helical double wire, and D2 is the inner diameter of the helical double wire; the ratio of the equivalent capacitance to the capacitance at which the center position is not offset is: In the formula, α is the tilt angle; the equivalent capacitance can be equal to the capacitance at the center position if the metal film width is increased, the insulating film thickness is reduced, or an insulating medium with a higher dielectric constant is used, based on the ratio of the equivalent capacitance.

[0013] Preferably, the equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the helical wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the helical double wire, and D2 is the inner diameter of the helical double wire; the ratio of the equivalent capacitance to the capacitance at which the center position is not offset is: The equivalent capacitance can be increased by increasing the width of the metal film, decreasing the thickness of the insulating film, or using an insulating medium with a higher dielectric constant to make the equivalent capacitance equal to the capacitance at the center position.

[0014] The beneficial effects of this invention are as follows: This invention optimizes the spiral winding structure, increases the insulation distance, and improves the surface insulation effect. No additional or subtractive components are required, and the winding process difficulty is essentially no greater than that of conventional solutions. Furthermore, this solution is scalable; the offset distance and direction of the winding structure can be flexibly adjusted according to the actual structural dimensions to achieve the best insulation effect and reduce the risk of flashover. Attached Figure Description

[0015] Figure 1 is a schematic diagram of a high-voltage spiral voltage multiplier; Figure 2 is a cross-sectional view of the single-layer outer metal film, first insulating film, inner metal film, and second insulating film structure of the present invention; Figure 3 is a two-dimensional longitudinal cross-sectional view of a conventional winding structure of the prior art; Figure 4 is a two-dimensional longitudinal cross-sectional view of the first winding structure of the present invention; Figure 5 is a two-dimensional longitudinal cross-sectional view of the second winding structure of the present invention; Figure 6 is a two-dimensional longitudinal cross-sectional view of the third winding structure of the present invention; Figure 7 is a two-dimensional longitudinal cross-sectional view of the fourth winding structure of the present invention; Figure 8 is a schematic diagram showing the increase in insulation distance between the first winding structure of the present invention and the conventional winding structure; Figure 9 is a three-dimensional schematic diagram of a conventional winding structure of the prior art; Figure 10 is a three-dimensional schematic diagram of the first winding structure of the present invention.

[0016] Among them: 1. outer metal film, 2. inner metal film, 3. first insulating film, 4. second insulating film. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions will be clearly and completely described below in conjunction with the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0018] It should be understood that in the various embodiments of the present invention, the sequence number of each process does not imply the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present invention.

[0019] It should be understood that in this invention, "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion, for example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or device.

[0020] It should be understood that in this invention, "multiple" refers to two or more. "And / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. The character " / " generally indicates that the preceding and following related objects are in an "or" relationship. "Contains A, B, and C", "Contains A, B, and C" means that all three A, B, and C are contained; "Contains A, B, or C" means that one of A, B, and C is contained; "Contains A, B, and / or C" means that any one, two, or three of A, B, and C are contained.

[0021] The technical solution of the present invention will be described in detail below with reference to specific embodiments. Embodiments may be combined with each other, and the same or similar concepts or processes may not be described again in some embodiments.

[0022] Example 1: A high-voltage spiral voltage multiplier, as shown in Figure 2, includes an outer metal film 1, an inner metal film 2, a first insulating film 3, and a second insulating film 4. The outer and inner metal films are spirally wound in a double-wire structure. A first insulating film is provided between the outer and inner metal films, and a second insulating film is provided between the inner and outer metal films. In this embodiment of the invention, the difference from the prior art is that the outer and inner metal films are spirally wound in a double-wire structure forming N turns. The center positions of any two adjacent turns differ by at least a predetermined offset distance in the axial direction. The equivalent capacitance between the outer and inner metal films is adjusted by adjusting the parameters of the outer metal film, inner metal film, first insulating film, and second insulating film. The difference between the adjusted equivalent capacitance and the capacitance where the center position is not offset is less than a predetermined threshold.

[0023] As shown in Figures 3 and 9, conventional parallel winding methods have short inter-turn insulation distances, making them more prone to surface flashover. The surface flashover voltage is proportional to the insulation distance; the larger the insulation distance, the less likely surface flashover will occur. The insulation distance refers to the possible path distance between the innermost and outermost electrodes of the winding structure for surface flashover. In this design, because the center positions of any two adjacent turns differ by at least a predetermined offset distance in the axial direction, the insulating film between the two metal layers protrudes outwards, lengthening the inter-turn surface distance. Therefore, the insulation distance between the two turns is significantly increased, increasing the insulation margin and reducing the risk of flashover. Since the thickness of the metal and insulating films is in the micrometer range, the winding radius during winding is much larger than the thickness of the metal and insulating films and the offset distance. Furthermore, the metal and insulating films have a certain degree of extensibility or elasticity, thus meeting the physical winding requirements of this design.

[0024] In the fabrication of a high-voltage spiral voltage multiplier, it is essential to ensure that the insulating film is slightly wider than the metal film to guarantee good insulation between the two electrodes. Then, the metal film and the insulating film are arranged in an overlapping manner, with the outer metal film, the first insulating film, the inner metal film, and the second insulating film overlapping. The inner metal film is tightly attached to the cylindrical insulating inner cylinder and then wound. After the overall winding is successful, the two outer electrodes are connected according to a typical spiral voltage multiplier connection scheme, which effectively increases the surface insulation distance of the wound structure.

[0025] Specifically, as shown in Figures 4 and 10, in this embodiment, the center positions of any two adjacent turns in the N-turn winding are offset in the same direction, and the center positions of any two adjacent turns are offset by at least a predetermined offset distance in the axial direction. The longitudinal section of a traditional winding structure is rectangular, while the longitudinal section of the structure in this embodiment is approximately equal to a parallelogram. The parallelogram has a certain tilt angle compared to the rectangle, as shown in Figure 8. l represents the flashover distance along the surface at both ends of the traditional winding method, which can increase the surface insulation length to 1 / sinα times the original length (α is the tilt angle), significantly increasing the insulation distance. This solution is suitable for conditions with a small number of winding turns.

[0026] In this scheme, the equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the helical wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the helical double wire, and D2 is the inner diameter of the helical double wire; the ratio of the equivalent capacitance to the capacitance at which the center position is not offset is: The winding structure of this embodiment can significantly increase the interlayer surface insulation distance, but the misalignment of adjacent metal films will cause changes in the equivalent capacitance. The capacitance change must be considered and compensation measures must be taken during the design. In this embodiment, the equivalent capacitance should be larger than that of conventional embodiments. Therefore, according to the equivalent capacitance formula, the width of the metal film can be increased, the thickness of the insulating film can be reduced, or an insulating medium with a higher dielectric constant can be used to make the equivalent capacitance equal to the capacitance of the center position without offset.

[0027] Example 2: A high-voltage spiral voltage multiplier, whose principle and implementation method are basically the same as Example 1, except that the N-turn winding includes an upper half and a lower half, both of which include N / 2 turns. In the upper half, the center positions of all any two adjacent turns are offset in the same direction, and in the lower half, the center positions of all any two adjacent turns are offset in the same direction. The center position offset directions of the upper and lower halves are opposite. As shown in Figure 5, in this example, the insulation is inclined in a V-shape along the winding surface through the winding arrangement. This scheme is suitable for conditions with a small number of winding turns.

[0028] Example 3: A high-voltage spiral voltage multiplier, whose principle and implementation method are basically the same as Example 1, except that the N-turn winding includes M sections. In each section, the center positions of any two adjacent turns are offset in the same direction, while the center positions of any two adjacent sections are offset in opposite directions. As shown in Figure 6, in this example, the winding arrangement makes the insulation surface alternately inclined in a sawtooth shape, resulting in a smaller overall structural center offset and a greater potential for improvement in the inter-turn spacing compared to Examples 1 and 2. This solution is suitable for conditions with a large number of winding turns.

[0029] Example 4: A high-voltage spiral voltage multiplier, whose principle and implementation method are basically the same as Example 1, except that the center positions of any two adjacent turns in the N-turn winding are not unequal in the axial direction, and the direction of the center position offset of any two adjacent turns is the same as or opposite to the direction of the center position offset of any other two adjacent turns. As shown in Figure 7, in this example, the insulation surface is made wavy by the winding arrangement. According to the sine curve estimation, the surface insulation length is increased to approximately [percentage missing] of the original length. The overall structural center offset is smaller, and the inter-turn spacing has more room for improvement compared to Embodiment 1 and Embodiment 2. This solution is suitable for conditions with a large number of winding turns.

[0030] In this scheme, the equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the helical wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the helical double wire, and D2 is the inner diameter of the helical double wire; the ratio of the equivalent capacitance to the capacitance at the center position without offset is... In this scheme, the equivalent capacitance should be larger than that of the conventional scheme. Therefore, according to the equivalent capacitance formula, the width of the metal film can be increased, the thickness of the insulating film can be reduced, or an insulating medium with a higher dielectric constant can be used to make the equivalent capacitance equal to the capacitance at the center position without offset.

[0031] The solution of the present invention is scalable and can be wound and arranged to improve the surface insulation strength according to actual needs, including but not limited to the above-mentioned inclined, V-shaped, sawtooth (W-shaped), wavy and other structures.

[0032] In summary, this invention optimizes the spiral winding structure, increasing the insulation distance and improving surface insulation performance without requiring the addition or removal of components. The winding process remains essentially unchanged compared to conventional solutions. Furthermore, this solution is scalable; the offset distance and direction of the winding structure can be flexibly adjusted according to the actual structural dimensions to achieve optimal insulation performance and reduce the risk of flashover.

[0033] Through the above description of the embodiments, those skilled in the art will understand that, for the sake of convenience and brevity, only the division of the above functional modules is used as an example. In actual applications, the above functions can be assigned to different functional modules as needed, that is, the internal structure of the specific device can be divided into different functional modules to complete all or part of the functions described above.

[0034] In the embodiments provided in this application, it should be understood that the disclosed structures and methods can be implemented in other ways. For example, the structural embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another structure, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces, or indirect coupling or communication connection between structures or units, and may be electrical, mechanical, or other forms.

[0035] The units described as separate components may or may not be physically separate. A component shown as a unit can be one or more physical units; that is, it can be located in one place or distributed in multiple different locations. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0036] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. A high-voltage spiral voltage multiplier, comprising an outer metal membrane, an inner metal membrane, a first insulating membrane, and a second insulating membrane, wherein the outer and inner metal membranes are spirally wound in a double-wire structure, a first insulating membrane is disposed between the outer and inner metal membranes, and a second insulating membrane is disposed between the inner metal membrane and its adjacent other outer metal membranes, characterized in that, The outer metal film and the inner metal film are spirally wound in double wires to form N turns. The center positions of any two adjacent turns are at least offset by a set distance in the axial direction. The equivalent capacitance between the outer metal film and the inner metal film is adjusted according to the parameters of the outer metal film, the inner metal film, the first insulating film and the second insulating film. The difference between the adjusted equivalent capacitance and the capacitance when the center position is not offset is less than a set threshold.

2. The high-pressure spiral voltage multiplier according to claim 1, characterized in that, In the N-turn winding, the center positions of any two adjacent turns are offset in the same direction.

3. A high-pressure spiral voltage multiplier according to claim 1, characterized in that, The N-turn winding includes an upper half and a lower half, each of which includes N / 2 turns. In the upper half, the center positions of any two adjacent turns are offset in the same direction, and in the lower half, the center positions of any two adjacent turns are offset in the same direction. The center positions of the upper half and the lower half are offset in opposite directions.

4. A high-pressure spiral voltage multiplier according to claim 1, characterized in that, The N-turn winding comprises M sections, in which the center positions of any two adjacent turns in each section are offset in the same direction, and the center positions of any two adjacent sections are offset in opposite directions.

5. A high-pressure spiral voltage multiplier according to any one of claims 1-4, characterized in that, The center positions of any two adjacent turns are at least equal in offset distance from each other in the axial direction, within a predetermined offset distance.

6. A high-pressure spiral voltage multiplier according to claim 1, characterized in that, In the N-turn winding, the center positions of any two adjacent turns are not unequal in the axial direction, and the direction of the offset of the center positions of any two adjacent turns is the same as or opposite to the direction of the offset of the center positions of any two other adjacent turns.

7. A high-pressure spiral voltage multiplier according to claim 5, characterized in that, The equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the spiral wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the spiral double wire, and D2 is the inner diameter of the spiral double wire. The ratio of the equivalent capacitance to the capacitance at which the center position is not offset is: In the formula, α is the tilt angle; The equivalent capacitance can be increased by increasing the width of the metal film, decreasing the thickness of the insulating film, or using an insulating medium with a higher dielectric constant to make the equivalent capacitance equal to the capacitance at the center position.

8. A high-pressure spiral voltage multiplier according to claim 6, characterized in that, The equivalent capacitance between the outer metal film and the inner metal film is: In the formula, C is the equivalent capacitance, N is the number of turns of the spiral wire, ε is the dielectric constant, S is the effective area of ​​the metal film, d is the turn spacing, L is the width of the metal film, D1 is the outer diameter of the spiral double wire, and D2 is the inner diameter of the spiral double wire. If the winding arrangement results in a wavy pattern along the insulation surface, then the ratio of the equivalent capacitance to the capacitance at the center position is: The equivalent capacitance can be increased by increasing the width of the metal film, decreasing the thickness of the insulating film, or using an insulating medium with a higher dielectric constant to make the equivalent capacitance equal to the capacitance at the center position.

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