Solar cell and preparation method therefor, electric device, and power generation device

Abstract

Provided in the present application are a solar cell and a preparation method therefor, an electric device, and a power generation device. The solar cell at least comprises a perovskite layer and a composite electron transport layer located on one side of the perovskite layer, the composite electron transport layer at least comprising an electron extraction layer and a first tin oxide layer, wherein the first tin oxide layer is located on the side of the electron extraction layer away from the perovskite layer; and the electron extraction layer comprises at least one of perylene imides and derivatives thereof, naphthalimides and derivatives thereof, and a semiconductor compound. In the present application, the electron extraction layer is used to replace conventional fullerene and derivatives thereof, which can reduce the manufacturing costs; and the composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell, and also significantly improves the stability of the perovskite.

Description

Solar cells and their fabrication methods, electrical devices and power generation devices

[0001] Cross-references to related applications

[0002] This application claims priority to Chinese Patent Application No. 202410946453.7, filed on July 15, 2024, entitled “Solar Cell and Method of Preparation Thereof, Electrical Device and Power Generation Device”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of solar cell technology, and in particular to a solar cell and its preparation method, an electrical device, and a power generation device. Background Technology

[0004] Currently, the electron transport layer of inverting solar cells is mainly composed of fullerenes and their derivatives. However, the production cost of fullerenes remains high, and solar cells made from other low-cost electron transport materials have lower efficiency compared to those made from fullerenes, limiting their application in inverting solar cells. Summary of the Invention

[0005] In view of the above-mentioned technical problems, this application provides a solar cell and its preparation method, power supply device and power generation device, which can reduce costs while achieving good photoelectric conversion efficiency of the solar cell.

[0006] The first technical solution adopted in this application is: to provide a solar cell, which includes at least a perovskite layer and a composite electron transport layer located on one side of the perovskite layer, the composite electron transport layer including at least an electron extraction layer and a first tin oxide layer, the first tin oxide layer being located on the side of the electron extraction layer away from the perovskite layer; wherein, the electron extraction layer includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds.

[0007] In the technical solution of this application embodiment, a composite electron transport layer is provided on one side of the perovskite layer. The composite electron transport layer includes at least an electron extraction layer and a first tin oxide layer. The electron extraction layer includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds. Using such an electron extraction layer instead of traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0008] In some embodiments, the conductivity of the electron extraction layer is greater than or equal to 1 x 10⁻⁶. -5 S·CM -1And less than or equal to 1x10 2 S·CM -1 Within this range, the conductivity of the electron extraction layer can effectively extract and transport photogenerated electrons, thereby improving the photoelectric conversion efficiency of solar cells.

[0009] In some embodiments, the thickness of the electron extraction layer is 1 nm to 20 nm. A thickness within this range allows for effective extraction and transport of photogenerated electrons, thereby improving the photoelectric conversion efficiency of the solar cell.

[0010] In some embodiments, the thickness of the first tin oxide layer is 10 nm to 30 nm. A thickness of the first tin oxide layer within this range can effectively improve the photoelectric conversion efficiency of the solar cell.

[0011] In some embodiments, the work function of the first tin oxide layer is Wf = 4.4 eV to 4.56 eV. A work function of the first tin oxide layer within this range can improve the photoelectric conversion efficiency of the solar cell.

[0012] In some embodiments, the roughness RMS of the first tin oxide layer is 0.4 nm to 0.6 nm. A roughness within this range can improve the photoelectric conversion efficiency of the solar cell.

[0013] In some embodiments, perylene imides and their derivatives include a perylene imide group and a first substituent. The first substituent may include a first group attached to a C atom in the perylene imide group and a second group attached to an N atom in the perylene imide group. The first group includes a halogen group, a triazine group, a fluorenyl group, or a benzodithiophene group; the second group includes an alkyl group.

[0014] In the technical solution of this application embodiment, using perylene imide and its derivatives as the electron extraction layer instead of the traditional fullerene and its derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0015] In some embodiments, perylene imides and their derivatives include PDI-Br Ta-PDI SF-PDI4 PF-PDI PBDT-PDI At least one of the following and its derivatives; wherein n is 1 to 200.

[0016] In the technical solution of this application embodiment, the perylene imide and its derivatives have a certain electron extraction capability. Using them as an electron extraction layer to replace the traditional fullerene and its derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0017] In some embodiments, naphthalimides and their derivatives include a naphthalimide group and a second substituent, the second substituent including a third group attached to a C atom in the naphthalimide group and a fourth group attached to an N atom in the naphthalimide group, the third group including at least one of a halogen group, a heterocyclic or benzo[a]heterocyclic ring, a substituted or unsubstituted benzene ring group, and the fourth group including an alkyl group and an aromatic group.

[0018] In the technical solution of this application embodiment, naphthalimide and its derivatives have a certain electron extraction capability. Using them as an electron extraction layer to replace traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0019] In some embodiments, the third group includes At least one of thienyl, fluorenyl, and benzodithienyl.

[0020] In some embodiments, naphthalimides and their derivatives include BF-NDI4. and NDI-ID At least one of the following, wherein NDI-ID includes at least one of the R-type and S-type enantiomers.

[0021] In the technical solution of this application embodiment, naphthalimide and its derivatives have a certain electron extraction capability. Using them as an electron extraction layer to replace traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0022] In some embodiments, the electron mobility of the semiconductor compound is in the range of 500 cm⁻¹. 2 V -1 s -1 ~10000cm 2 V -1 s -1 Within this range, the electron mobility of semiconductor compounds can effectively extract and transport photogenerated electrons, thereby improving the photoelectric conversion efficiency of solar cells.

[0023] In some embodiments, the semiconductor compound includes at least one of SnO2, ZnO, PbS, and TiO2. SnO2, ZnO, PbS, and TiO2 have good electrical conductivity, which can not only protect the perovskite layer but also ensure electron transport performance, thus enabling the solar cell to have good photoelectric conversion efficiency.

[0024] In some embodiments, the electron extraction layer includes a second tin oxide layer, and the work function of the first tin oxide layer is less than the work function of the second tin oxide layer.

[0025] In the technical solution of this application embodiment, the second tin oxide layer is located close to the perovskite layer. During the preparation of the high work function second tin oxide layer, its preparation process has little impact on the perovskite layer. At the same time, during the subsequent preparation of the low work function first tin oxide layer, the already prepared high work function second tin oxide layer can protect the perovskite layer, preventing the perovskite layer from being damaged during the preparation of the first tin oxide layer, thereby improving the photoelectric conversion efficiency of the solar cell.

[0026] In some embodiments, the work function of the second tin oxide layer is Wf = 4.586 eV to 4.604 eV.

[0027] In the technical solution of this application embodiment, the work function of the second tin oxide layer within the above-mentioned range is greater than that of the first tin oxide layer. The second tin oxide layer is located closer to the perovskite layer. During the preparation of the high work function second tin oxide layer, its preparation process has minimal impact on the perovskite layer. Simultaneously, during the subsequent preparation of the low work function first tin oxide layer, the already prepared high work function second tin oxide layer can protect the perovskite layer, preventing damage during the preparation of the first tin oxide layer and thus improving the photoelectric conversion efficiency of the solar cell.

[0028] In some embodiments, the roughness RMS of the second tin oxide layer is 0.7 nm to 0.9 nm.

[0029] In the technical solution of this application embodiment, the second tin oxide layer is located close to the perovskite layer. During the preparation of the high-roughness second tin oxide layer, its preparation process has little impact on the perovskite layer. At the same time, during the subsequent preparation of the low-roughness first tin oxide layer, the already prepared high-roughness second tin oxide layer can protect the perovskite layer, preventing the perovskite layer from being damaged during the preparation of the first tin oxide layer, thereby improving the photoelectric conversion efficiency of the solar cell.

[0030] In some embodiments, the composite electron transport layer further includes a protective layer located on the side of the electron extraction layer facing the perovskite layer.

[0031] In the technical solution of this application embodiment, a protective layer, an electron extraction layer, and a first tin oxide layer are sequentially arranged to form a composite electron transport layer. One function of setting the protective layer and the electron extraction layer is to reduce manufacturing costs. Another function is to protect the perovskite layer during the subsequent process of preparing the low work function first tin oxide layer, so that the perovskite layer is not damaged, thereby maintaining the photoelectric conversion efficiency of the solar cell.

[0032] In some embodiments, the protective layer includes at least one of LiF, Al2O3, and SiO2.

[0033] In some embodiments, the protective layer has a discontinuous island structure. The protective layer includes at least one of LiF, Al2O3, and SiO2. The discontinuous island structure of the protective layer can expose part of the perovskite layer, and the exposed perovskite layer directly contacts the electron extraction layer to transport electrons. The protruding island-shaped protective layer located between the perovskite layer and the electron extraction layer generates a tunneling effect, which can improve the electron transport efficiency, thereby improving the photoelectric conversion efficiency of the solar cell.

[0034] In some embodiments, the protective layer includes at least one of ZnO, PbS, and TiO2.

[0035] In some embodiments, the protective layer is a discontinuous island structure or a continuous film layer. The protective layer includes at least one of ZnO, PbS, and TiO2. The protective layer is a discontinuous island structure or a continuous film layer. ZnO, PbS, and TiO2 have good electrical conductivity, which can not only protect the perovskite layer but also take into account electron transport performance, so that the solar cell has good photoelectric conversion efficiency.

[0036] In some implementations, the thickness of the protective layer is greater than 0 and less than or equal to 2 nm. Since the material of the protective layer itself is insulating, the thickness of the protective layer should not be too thick. Within this thickness range, the protective layer not only protects the perovskite layer but also ensures electron transport performance.

[0037] In some embodiments, the total thickness of the protective layer and the electron extraction layer is 3 nm to 10 nm. A total thickness within this range allows the protective layer and the electron extraction layer to possess high electron transport performance.

[0038] In some embodiments, the solar cell is an inverted perovskite solar cell, which includes a first electrode, a hole transport layer, a perovskite layer, a composite electron transport layer, and a second electrode stacked sequentially.

[0039] The second technical solution adopted in this application is: providing a method for preparing a solar cell, the method comprising: setting a perovskite layer; setting a composite electron transport layer on the perovskite layer, wherein the method includes: setting an electron extraction layer on the perovskite layer; setting a first tin oxide layer on the electron extraction layer, wherein the electron extraction layer comprises at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and a semiconductor compound.

[0040] In the technical solution of this application embodiment, the step of setting a composite electron transport layer on the perovskite layer includes setting an electron extraction layer on the perovskite layer and setting a first tin oxide layer on the electron extraction layer. The electron extraction layer includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds. Using such an electron extraction layer instead of traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer formed by the electron extraction layer and the first tin oxide layer improves the photoelectric conversion efficiency of the solar cell while significantly improving the stability of the perovskite.

[0041] In some embodiments, an electron extraction layer is formed on the perovskite layer by at least one of the following methods: vapor deposition, spin coating, physical vapor deposition (PVD), reactive plasma deposition (RPD), or pulsed laser deposition (PLD). A first tin oxide layer is formed on the electron extraction layer by atomic layer deposition (ALD).

[0042] In the technical solution of this application embodiment, the electron extraction layer is prepared using the above-mentioned mild preparation method, which helps to protect the perovskite layer from damage and does not affect the photoelectric conversion efficiency of the solar cell. The first tin oxide layer is deposited on the electron extraction layer using ALD deposition, which facilitates the preparation of a film layer with low work function and improves the photoelectric conversion efficiency of the solar cell.

[0043] In some embodiments, the step of setting an electron extraction layer on the perovskite layer is as follows: setting a protective layer on the perovskite layer, and setting an electron extraction layer on the protective layer.

[0044] In the technical solution of this application embodiment, an electron extraction layer is set after a protective layer is set on the perovskite layer, which further protects the perovskite layer from damage in subsequent processes while improving the photoelectric conversion efficiency of the solar cell.

[0045] The third technical solution adopted in this application is: to provide an electrical device, which includes a solar cell as described above or a solar cell prepared by the method described above.

[0046] Since the power-consuming device of this application includes the solar cell provided in this application, it has at least the same advantages as the solar cell.

[0047] The fourth technical solution adopted in this application is: to provide a power generation device, which includes a solar cell as described above or a solar cell prepared by the method described above.

[0048] Since the power generation device of this application is used to generate electricity, and it includes the solar cell provided in this application, it has at least the same advantages as a solar cell.

[0049] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0050] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiments below. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0051] Figure 1 is a schematic diagram of the structure of a solar cell according to some embodiments of this application;

[0052] Figure 2 is a schematic diagram of the structure of a solar cell according to some embodiments of this application;

[0053] Figure 3 is an atomic force microscope (AFM) image of the first tin oxide layer of a solar cell according to some embodiments of this application;

[0054] Figure 4 shows an atomic force microscope (AFM) image of the second tin oxide layer of a solar cell in some embodiments of this application;

[0055] Figure 5 is a schematic diagram of the structure of an electrical device according to some embodiments of this application;

[0056] Figure 6 is a schematic diagram of the structure of a power generation device according to some embodiments of this application.

[0057] Labeling description: Solar cell 100, perovskite layer 10, composite electron transport layer 11, electron extraction layer 112, first tin oxide layer 113, first electrode 12, hole transport layer 13, second electrode 14, power consumption device 1000, power generation device 2000. Detailed Implementation

[0058] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0059] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0060] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0061] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0062] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0063] Referring to Figure 1, the first technical solution adopted in this application is: providing a solar cell 100, which includes at least a perovskite layer 10 and a composite electron transport layer 11 located on one side of the perovskite layer 10. The composite electron transport layer 11 includes at least an electron extraction layer 112 and a first tin oxide layer 113, with the first tin oxide layer 113 located on the side of the electron extraction layer 112 away from the perovskite layer 10. The electron extraction layer 112 includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds.

[0064] In the technical solution of this application embodiment, a composite electron transport layer 11 is provided on one side of the perovskite layer 10. The composite electron transport layer 11 includes at least an electron extraction layer 112 and a first tin oxide layer 113. The electron extraction layer 112 includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds. Using this electron extraction layer 112 instead of traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 while significantly improving the stability of the perovskite.

[0065] The solar cell 100 disclosed in this application can be used in electrical devices or power generation devices that utilize photoelectric conversion. Electrical devices can be, but are not limited to, mobile phones, tablets, laptops, electric toys, power tools, electric vehicles, electric cars, ships, spacecraft, etc. Electric toys can include stationary or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc. Spacecraft can include airplanes, rockets, space shuttles, and spacecraft, etc. The power generation device can include solar cells and energy storage devices, and the energy storage device can be a secondary battery.

[0066] In some embodiments, the conductivity of the electron extraction layer is greater than or equal to 1 x 10⁻⁶. -5 S·CM -1 And less than or equal to 1x10 2 S·CM -1 Within this range, the conductivity of the electron extraction layer can effectively extract and transport photogenerated electrons, thereby improving the photoelectric conversion efficiency of the solar cell. The conductivity of the electron extraction layer can be 1 x 10⁻⁶. -5 S·CM -1 2x10 -4 S·CM -1 3x10 -3 S·CM -1 4.5x10 -2 S·CM -1 6.2x10 -1 S·CM -1 9.2x10 1 S·CM -1 1x10 2 S·CM -1 etc., or a range consisting of any two of the above values, for example, 1x10. -5 S·CM -1 ~4.5x10 -2 S·CM -1 4.5x10 -2S·CM -1 ~1x10 2 S·CM -1 2x10 -4 S·CM -1 ~6.2x10 -1 S·CM -1 wait.

[0067] Electrical conductivity has a meaning known in the art and can be measured using the four-probe method.

[0068] In some embodiments, the thickness of the electron extraction layer 112 is 1 nm to 20 nm. A thickness within this range allows for effective extraction and transport of photogenerated electrons, improving the photoelectric conversion efficiency of the solar cell 100. The thickness of the electron extraction layer 112 can be 1 nm, 1.1 nm, 1.5 nm, 1.9 nm, 2.0 nm, 2.1 nm, 2.5 nm, 3.1 nm, 3.8 nm, 4.5 nm, 4.9 nm, 5.7 nm, 6.8 nm, 7.1 nm, 8.0 nm, 9.5 nm, 10.0 nm, 12.3 nm, 15.0 nm, 17.75 nm, 18.0 nm, 20.0 nm, etc., or... The range formed by any two of the above values ​​can be, for example, 1nm~2.0nm, 2.0nm~5.7nm, 5.7nm~8.0nm, 2.0nm~6.8nm, 5.7nm~7.1nm, 3.1nm~6.8nm, 3.8nm~8.0nm, 3.8nm~9.5nm, 4.9nm~10.0nm, 4.9nm~18.0nm, 2.0nm~20.0nm, etc.

[0069] In some embodiments, the thickness of the first tin oxide layer 113 is 10 nm to 30 nm. A thickness of the first tin oxide layer 113 within this range can effectively improve the photoelectric conversion efficiency of the solar cell 100. The thickness of the first tin oxide layer 113 can be 10 nm, 10.1 nm, 14 nm, 15 nm, 18.5 nm, 19 nm, 21 nm, 25.5 nm, 28.5 nm, 30 nm, etc., or a range consisting of any two of the above values, for example, 10 nm to 15 nm, 15 nm to 21 nm, 21 nm to 30 nm, 10.1 nm to 25.5 nm, 15 nm to 28.5 nm, 18.5 nm to 21 nm, etc.

[0070] In some embodiments, the work function of the first tin oxide layer 113 is Wf = 4.4 eV to 4.56 eV. A work function of the first tin oxide layer 113 within this range can improve the photoelectric conversion efficiency of the solar cell 100. The work function Wf of the first tin oxide layer 113 can be 4.4 eV, 4.42 eV, 4.45 eV, 4.48 eV, 4.50 eV, 4.51 eV, 4.53 eV, 4.55 eV, 4.56 eV, etc., or a range consisting of any two of the above values, for example, 4.4 eV to 4.50 eV, 4.50 eV to 4.56 eV, 4.45 eV to 4.53 eV, etc.

[0071] The work function has a well-known meaning in the field and can be detected by Kelvin probe force microscopy (KPFM).

[0072] In some embodiments, the roughness RMS of the first tin oxide layer 113 is 0.4 nm to 0.6 nm. A roughness within this range can improve the photoelectric conversion efficiency of the solar cell 100. The roughness RMS of the first tin oxide layer 113 can be 0.4 nm, 0.42 nm, 0.48 nm, 0.52 nm, 0.55 nm, 0.59 nm, 0.6 nm, or any range of two of the above values, for example, 0.4 nm to 0.52 nm, 0.52 nm to 0.6 nm, 0.42 nm to 0.55 nm, 0.48 nm to 0.59 nm, etc.

[0073] In some embodiments, perylene imides and their derivatives include a perylene imide group and a first substituent, the first substituent may include a first group attached to a C atom in the perylene imide group and a second group attached to an N atom in the perylene imide group, the first group including a halogen group, a triazine group, a fluorenyl group, a benzodithiophene group; the second group including an alkyl group.

[0074] In the technical solution of this application embodiment, using perylene imide and its derivatives as the electron extraction layer 112 instead of the traditional fullerene and its derivatives can reduce manufacturing costs. At the same time, the composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 and significantly improves the stability of the perovskite.

[0075] In some embodiments, perylene imides and their derivatives include PDI-Br Ta-PDI SF-PDI4 PF-PDI PBDT-PDI At least one of the following and its derivatives; wherein n is 1 to 200.

[0076] In the technical solution of this application embodiment, the perylene imide and its derivatives have a certain electron extraction capability. Using them as the electron extraction layer 112 instead of the traditional fullerene and its derivatives can reduce manufacturing costs. The composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 and significantly improves the stability of the perovskite.

[0077] In some embodiments, naphthalimides and their derivatives include a naphthalimide group and a second substituent, the second substituent including a third group attached to a C atom in the naphthalimide group and a fourth group attached to an N atom in the naphthalimide group, the third group including at least one of a halogen group, a heterocyclic or benzo[a]heterocyclic ring, a substituted or unsubstituted benzene ring group, and the fourth group including an alkyl group and an aromatic group.

[0078] In the technical solution of this application embodiment, naphthalimide and its derivatives have a certain electron extraction capability. Using them as the electron extraction layer 112 instead of the traditional fullerene and its derivatives can reduce manufacturing costs. The composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 and significantly improves the stability of the perovskite.

[0079] In some embodiments, the third group includes At least one of thienyl, fluorenyl, and benzodithienyl.

[0080] In some embodiments, naphthalimides and their derivatives include BF-NDI4. and NDI-ID At least one of the following, wherein NDI-ID includes at least one of the R-type and S-type enantiomers.

[0081] In the technical solution of this application embodiment, naphthalimide and its derivatives have a certain electron extraction capability. Using them as the electron extraction layer 112 instead of the traditional fullerene and its derivatives can reduce manufacturing costs. The composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 and significantly improves the stability of the perovskite.

[0082] In some embodiments, the electron mobility of the semiconductor compound is in the range of 500 cm⁻¹. 2 V -1 s -1 ~10000cm 2 V-1 s -1 Within this range, the electron mobility of semiconductor compounds can effectively extract and transport photogenerated electrons, thereby improving the photoelectric conversion efficiency of solar cells. The electron mobility of semiconductor compounds can reach 500 cm⁻¹. 2 V -1 s -1 550cm 2 V -1 s -1 800cm 2 V -1 s -1 1000cm 2 V -1 s -1 1250cm 2 V -1 s -1 1560cm 2 V -1 s -1 2400cm 2 V -1 s -1 3500cm 2 V -1 s -1 4600cm 2 V -1 s -1 5200cm 2 V -1 s -1 6450cm 2 V -1 s -1 7800cm 2 V -1 s -1 8500cm 2 V -1 s -1 9200cm 2 V -1 s -1 10000cm 2 V -1 s -1 etc., or a range consisting of any two of the above values, for example, 500cm 2 V -1 s -1 ~1000cm 2 V -1 s -1 1000cm 2 V -1 s -1 ~2400cm 2 V-1 s -1 2400cm 2 V -1 s -1 ~6450cm 2 V -1 s -1 6450cm 2 V -1 s -1 ~10000cm 2 V -1 s -1 1560cm 2 V -1 s -1 ~8500cm 2 V -1 s -1 wait.

[0083] Electron mobility has a well-known meaning in the art and can be detected by field-effect transistor testing, space charge limitation testing, timing technology testing, etc. In the embodiments of this application, a comprehensive physical property measurement system is used for detection.

[0084] In some embodiments, the semiconductor compounds include SnO2, ZnO, PbS, and TiO2. SnO2, ZnO, PbS, and TiO2 have good electrical conductivity, which can not only protect the perovskite layer but also ensure electron transport performance, thus enabling the solar cell to have good photoelectric conversion efficiency.

[0085] In some embodiments, the electron extraction layer 112 includes a second tin oxide layer, and the work function of the first tin oxide layer 113 is less than the work function of the second tin oxide layer.

[0086] In the technical solution of this application embodiment, the second tin oxide layer is located near the perovskite layer 10. During the preparation of the high work function second tin oxide layer, its preparation process has little impact on the perovskite layer 10. At the same time, during the subsequent preparation of the low work function first tin oxide layer 113, the already prepared high work function second tin oxide layer can protect the perovskite layer 10, preventing the perovskite layer 10 from being damaged during the preparation of the first tin oxide layer 113, thereby improving the photoelectric conversion efficiency of the solar cell 100.

[0087] In some embodiments, the work function of the second tin oxide layer is Wf = 4.586 eV to 4.604 eV.

[0088] In the technical solution of this application embodiment, the work function of the second tin oxide layer within the above-mentioned range is greater than the work function of the first tin oxide layer 113. The second tin oxide layer is located near the perovskite layer 10. During the preparation of the high work function second tin oxide layer, its preparation process has little impact on the perovskite layer 10. At the same time, during the subsequent preparation of the low work function first tin oxide layer 113, the already prepared high work function second tin oxide layer can protect the perovskite layer 10, preventing the perovskite layer 10 from being damaged during the preparation of the first tin oxide layer 113, thereby improving the photoelectric conversion efficiency of the solar cell 100. The work function Wf of the second tin oxide layer can be 4.586 eV, 4.588 eV, 4.590 eV, 4.595 eV, 4.600 eV, 4.601 eV, 4.604 eV, or any range of two of the above values. For example, it can be 4.586 eV to 4.595 eV, 4.595 eV to 4.600 eV, 4.600 eV to 4.604 eV, 4.590 eV to 4.601 eV, etc.

[0089] In some embodiments, the roughness RMS of the second tin oxide layer is 0.7 nm to 0.9 nm.

[0090] In the technical solution of this application embodiment, the second tin oxide layer is located near the perovskite layer 10. During the preparation of the high-roughness second tin oxide layer, its preparation process has little impact on the perovskite layer 10. Simultaneously, during the subsequent preparation of the low-work-function first tin oxide layer 113, the already prepared high-work-function second tin oxide layer can protect the perovskite layer 10, preventing damage to the perovskite layer 10 during the preparation of the first tin oxide layer 113, thereby improving the photoelectric conversion efficiency of the solar cell 100. The roughness RMS of the second tin oxide layer can be 0.7nm, 0.72nm, 0.78nm, 0.82nm, 0.85nm, 0.89nm, 0.9nm, etc., or a range consisting of any two of the above values, for example, 0.7nm~0.78nm, 0.78nm~0.85nm, 0.85nm~0.9nm, 0.72nm~0.89nm, etc.

[0091] In some embodiments, referring to FIG2, the composite electron transport layer 11 further includes a protective layer 111 located on the side of the electron extraction layer 112 facing the perovskite layer 10.

[0092] In the technical solution of this application embodiment, a composite electron transport layer 11 is formed by sequentially disposing of a protective layer 111, an electron extraction layer 112, and a first tin oxide layer 113. One function of disposing of the protective layer 111 and the electron extraction layer 112 is to reduce manufacturing costs. Another function is to protect the perovskite layer 10 during the subsequent preparation of the low work function first tin oxide layer 113, so that the perovskite layer 10 is not damaged, thereby maintaining the photoelectric conversion efficiency of the solar cell 100.

[0093] In some embodiments, the protective layer 111 includes at least one of LiF, Al2O3, and SiO2.

[0094] In some embodiments, the protective layer 111 has a discontinuous island structure. The protective layer 111 includes at least one of LiF, Al2O3, and SiO2. The discontinuous island structure of the protective layer 111 can expose part of the perovskite layer 10. The exposed perovskite layer 10 directly contacts the electron extraction layer 112 to transport electrons. The protruding island-shaped protective layer located between the perovskite layer 10 and the electron extraction layer 112 generates a tunneling effect, which can improve the electron transport efficiency, thereby improving the photoelectric conversion efficiency of the solar cell 100.

[0095] In some embodiments, the protective layer 111 includes at least one of ZnO, PbS, and TiO2.

[0096] In some embodiments, the protective layer 111 is a discontinuous island structure or a continuous film layer. The protective layer 111 includes at least one of ZnO, PbS, and TiO2. The protective layer 111 has a discontinuous island structure or a continuous film layer. ZnO, PbS, and TiO2 have good electrical conductivity, which can not only protect the perovskite layer 10 but also take into account the electron transport performance, so that the solar cell 100 has good photoelectric conversion efficiency.

[0097] In some embodiments, the thickness of the protective layer 111 is greater than 0 and less than or equal to 2 nm. Since the material of the protective layer 111 itself is insulating, the thickness of the protective layer 111 should not be too thick. Within this thickness range, the protective layer 111 not only protects the perovskite layer 10 but also ensures electron transport performance. The thickness of the protective layer 111 can be 0.0001 nm, 0.1 nm, 0.2 nm, 0.5 nm, 0.6 nm, 0.9 nm, 1.0 nm, 1.1 nm, 1.5 nm, 1.6 nm, 1.9 nm, 2.0 nm, etc., or a range consisting of any two of the above values. For example, it can be 0.0001 nm to 0.5 nm, 0.1 nm to 1.1 nm, 1.1 nm to 2.0 nm, 0.5 nm to 2.0 nm, 0.9 nm to 1.9 nm, 0.2 nm to 2.0 nm, 0.6 nm to 1.6 nm, etc. When the protective layer thickness is 0, the maximum thickness of the electron extraction layer 112 can be 10 nm.

[0098] In some embodiments, the total thickness of the protective layer 111 and the electron extraction layer 112 is 3 nm to 10 nm. Having a total thickness of 3 nm to 10 nm allows the protective layer 111 and the electron extraction layer 112 to possess high electron transport performance. The total thickness of the protective layer 111 and the electron extraction layer 112 can be 3 nm, 3.1 nm, 3.8 nm, 4.1 nm, 4.9 nm, 5.0 nm, 5.9 nm, 6.6 nm, 7.5 nm, 7.9 nm, 8.5 nm, 8.8 nm, 9.1 nm, 9.5 nm, 10.0 nm, etc., or a range consisting of any two of the above values. For example, it can be 3 nm to 5.0 nm, 5.0 nm to 7.9 nm, 7.9 nm to 10.0 nm, 3.8 nm to 8.5 nm, 4.1 nm to 9.5 nm, 4.9 nm to 10 nm, etc.

[0099] Please refer to Figures 3 and 4. Figure 3 is an AFM image of the first tin oxide layer 113 prepared by atomic layer deposition in one embodiment, and Figure 4 is an AFM image of the second tin oxide layer prepared by RPD in one embodiment.

[0100] In some embodiments, the solar cell 100 is an inverted perovskite solar cell, which includes a first electrode 12, a hole transport layer 13, a perovskite layer 10, a composite electron transport layer 11, and a second electrode 14 stacked sequentially.

[0101] The first electrode 12 includes a transparent conductive glass substrate, which serves to extract photogenerated carriers. The transparent conductive layer includes, but is not limited to, one of the following materials: FTO, ITO, AZO, BZO, and IZO.

[0102] The hole transport layer 13 is made of nickel oxide, and the preparation methods include, but are not limited to, magnetron sputtering, atomic deposition, spin coating, etc. The hole transport layer 13 can also be one or more of the following materials that can transport holes and block electrons: 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (Spiro-OMeTAD), polytriarylamine (PTAA), NiOx, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), WO3, organic self-assembled small molecules (SAMs).

[0103] The composition of the perovskite layer 10 can be ABX3 or A2CDX6, where A includes inorganic, organic, or mixed organic-inorganic cations, and can be MA. + (methylamine cation), FA + (formamidinium cation), Cs + 、Rb + At least one of the following; B includes an inorganic cation, which may be Pb. 2+ Sn 2+ At least one of the following; C includes inorganic, organic, or mixed organic-inorganic cations, commonly Ag. + Cu + Au + FA + GA + (Guidinium cation); D includes inorganic cations, which can be Bi. 3+ Sb 3+ and In 3+ At least one of the following; X includes an inorganic anion, which can be Cl... - ,Br - I - At least one of them.

[0104] The band gap of the perovskite layer 10 ranges from 1.20 eV to 2.30 eV, and the thickness of the perovskite layer 10 ranges from 400 nm to 1000 nm.

[0105] The material of the second electrode 14 is an organic, inorganic, or organic-inorganic mixed conductive material, including but not limited to one or more of the following materials: Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO.

[0106] The second technical solution adopted in this application is: providing a method for preparing a solar cell 100, the method comprising: setting a perovskite layer 10; setting a composite electron transport layer 11 on the perovskite layer 10, wherein the method comprises: setting an electron extraction layer 112 on the perovskite layer 10; setting a first tin oxide layer 113 on the electron extraction layer 112, wherein the electron extraction layer 112 comprises at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds.

[0107] In the technical solution of this application embodiment, the step of forming a composite electron transport layer 11 on the perovskite layer 10 includes forming an electron extraction layer 112 on the perovskite layer 10 and forming a first tin oxide layer 113 on the electron extraction layer 112. The electron extraction layer 112 includes at least one of perylene imide and its derivatives, naphthalene imide and its derivatives, and semiconductor compounds. Using such an electron extraction layer 112 instead of traditional fullerenes and their derivatives can reduce manufacturing costs. The composite electron transport layer 11 formed by the electron extraction layer 112 and the first tin oxide layer 113 improves the photoelectric conversion efficiency of the solar cell 100 while significantly improving the stability of the perovskite.

[0108] In some embodiments, an electron extraction layer 112 is formed on the perovskite layer 10 by at least one of the following methods: vapor deposition, spin coating, PVD deposition, RPD deposition, PLD, spraying, magnetron sputtering, chemical vapor deposition (CVD), blade coating, spraying, and vapor deposition. A first tin oxide layer 113 is formed on the electron extraction layer 112 by ALD deposition.

[0109] In the technical solution of this application embodiment, the electron extraction layer 112 is prepared using the above-mentioned mild preparation method, which helps to protect the perovskite layer 10 from damage and does not affect the photoelectric conversion efficiency of the solar cell 100. The first tin oxide layer 113 is deposited on the electron extraction layer 112 using ALD deposition, which facilitates the preparation of a film layer with low work function and improves the photoelectric conversion efficiency of the solar cell 100.

[0110] In some embodiments, the step of setting the electron extraction layer 112 on the perovskite layer 10 is as follows: setting a protective layer 111 on the perovskite layer 10, and setting the electron extraction layer 112 on the protective layer 111.

[0111] In the technical solution of this application embodiment, after setting a protective layer 111 on the perovskite layer 10, an electron extraction layer 112 is then set, which further protects the perovskite layer 10 from damage in subsequent processes while improving the photoelectric conversion efficiency of the solar cell 100.

[0112] Referring to Figure 3, this application also provides an electrical device 1000, including the solar cell 100 as described above or the solar cell 100 prepared by the solar cell preparation method described above.

[0113] In this application, the solar cell 100 serves as the power source for the aforementioned electrical device 1000; alternatively, the solar cell 100 can serve as an energy storage unit for the aforementioned electrical device 1000. As an example, the electrical device 1000 can be a lighting element, a display element, or an automobile, etc.

[0114] Referring to Figure 4, this application also provides a power generation device 2000, including the solar cell 100 as described above or the solar cell 100 prepared by the method described above. The power generation device 2000 may include the solar cell 100 and an energy storage device, which may be a secondary battery.

[0115] To make the technical problems, technical solutions, and beneficial effects solved by the embodiments of this application clearer, the following will provide a more detailed description in conjunction with the embodiments and accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. The following description of at least one exemplary embodiment is merely illustrative and is in no way intended to limit this application or its applications. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0116] The features and performance of this application will be further described in detail below with reference to the embodiments.

[0117] Example 1:

[0118] (1) Preparation of FTO conductive glass electrode: 2.0 x 2.0 cm 2 The FTO glass was laser-etched to remove 0.35 cm of FTO from each end, exposing the glass substrate. The etched FTO conductive glass was then ultrasonically cleaned several times with water, acetone, and isopropanol to obtain the first electrode, which was then dried with nitrogen for later use.

[0119] (2) Preparation of hole transport layer: The first electrode is subjected to ultraviolet ozone treatment, and then NiOx with a thickness of about 20nm to 50nm is sputtered by magnetron sputtering. After annealing at 300℃ for 60min, the hole transport layer is obtained. The thickness of the hole transport layer after annealing is 20nm.

[0120] (3) Preparation of the perovskite layer: The perovskite layer Cs was prepared by a one-step method. 0.25 FA 0.75 Pb( I0.95 Br 0.053. Spin-coat the perovskite precursor solution onto the hole transport layer at a speed of 3000 rpm to 5000 rpm for 20 to 40 seconds. Add 300 μL to 600 μL of the anti-solvent anisole about 10 seconds after the spin-coating begins. Then place the film on a hot plate and anneal at 100 °C to 120 °C for 60 minutes to obtain a perovskite layer with a thickness of 500 nm.

[0121] (4) Preparation of protective layer / electron extraction layer / electron transport layer: 1 nm of LiF was deposited on the perovskite layer by vapor deposition, followed by spin coating of 5 nm of NDI-ID, and then 20 nm of SnO2 was deposited by ALD.

[0122] (5) Preparation of the second electrode: The thin film with the electron transport layer is placed in the evaporation apparatus, and the evaporation vacuum degree is adjusted to 5 x 10⁻⁶. -4 Below Pa, 80 nm of Ag is deposited at a rate of 0.1 A / s to obtain the second electrode.

[0123] Example 2

[0124] Similar to Example 1, the difference is:

[0125] Step (4) of Example 1 is adjusted as follows:

[0126] Preparation of electron extraction / electron transport layer: 5 nm SnO2 was deposited on the perovskite layer using RPD, followed by 20 nm SnO2 deposition using ALD.

[0127] Example 3

[0128] Similar to Example 1, the difference is:

[0129] Step (4) of Example 1 is adjusted as follows:

[0130] Preparation of electron extraction / electron transport layer: 5 nm of PbS was deposited on the perovskite layer, followed by 20 nm of SnO2 deposition using ALD.

[0131] Example 4

[0132] Similar to Example 1, the difference is:

[0133] Step (4) of Example 1 is adjusted as follows:

[0134] Preparation of electron extraction / electron transport layer: 5 nm TiO2 was deposited on the perovskite layer, followed by 20 nm SnO2 deposition using ALD.

[0135] Example 5

[0136] Similar to Example 1, the difference is:

[0137] Step (4) of Example 1 is adjusted as follows:

[0138] Preparation of protective layer / electron extraction layer / electron transport layer: An Al2O3 layer was prepared on the perovskite layer by ALD to obtain 1 nm of Al2O3, followed by spin coating of 5 nm of PDI-Br, and then deposition of 15 nm of SnO2 by ALD.

[0139] Example 6

[0140] Similar to Example 1, the difference is:

[0141] Step (4) of Example 1 is adjusted as follows:

[0142] Preparation of protective layer / electron extraction layer / electron transport layer: 1.5 nm of SiO2 was deposited on the perovskite layer by ALD, followed by spin coating of NDI-ID (RS) of about 20 nm or less, and then 10 nm of SnO2 was deposited by ALD.

[0143] Example 7

[0144] Similar to Example 1, the difference is:

[0145] Step (4) of Example 1 is adjusted as follows:

[0146] Fabrication of the protective layer / electron transport layer: A 10 nm layer of SiO2 was deposited on the perovskite layer using ALD, followed by a 10 nm layer of SnO2 deposited using ALD.

[0147] Example 8

[0148] Similar to Example 1, the difference is:

[0149] Step (4) of Example 1 is adjusted as follows:

[0150] Preparation of protective layer / electron transport layer: 2 nm of PbS was deposited on the perovskite layer by vapor deposition, followed by 30 nm of SnO2 deposited by ALD.

[0151] Example 9

[0152] Similar to Example 1, the difference is:

[0153] Step (4) of Example 1 is adjusted as follows:

[0154] Fabrication of the protective layer / electron transport layer: A 5 nm ZnO layer was deposited on the perovskite layer using ALD, followed by a 25 nm SnO2 layer deposited using ALD.

[0155] Comparative Example 1

[0156] Similar to Example 1, the difference is:

[0157] Step (4) of Example 1 is adjusted as follows:

[0158] Preparation of protective layer / electron extraction layer / electron transport layer: 1 nm of LiF was deposited on the perovskite layer by vapor deposition, followed by spin coating of 5 nm of C. 60 Next, 20nm SnO2 was deposited using ALD.

[0159] Comparative Example 2

[0160] Similar to Example 1, the difference is:

[0161] Step (4) of Example 1 is adjusted as follows:

[0162] Preparation of the electron extraction layer: 5 nm SnO2 was prepared by RPD, followed by deposition of 20 nm SnO2 by ALD.

[0163] Battery performance tests were conducted on the battery devices 1 to 11 obtained from Examples 1 to 9 and Comparative Examples 1 to 2, and the results are shown in Table 1.

[0164] Test method:

[0165] 1. Initial efficiency test method: JV test uses an AAA-grade solar simulator as the light source and a high-precision source meter as the test equipment. The voltage scan range is from -0.1V to 1.2V, and the data acquisition delay is 20ms.

[0166] 2. Stability test of 85℃ dark storage (ISOS-D-3I): Place each group of devices on the hot stage in a glove box, or place the devices in a fixture that is continuously purged with nitrogen and then place the fixture on the hot stage, maintaining H2O and O2 < 0.1ppm. Set the hot stage temperature to 85℃, and perform a cooling program of 1.5℃ / min every 200 hours. After cooling to room temperature, remove the devices and test their JV performance. Record the data and use the mean to create a line graph.

[0167] 3. 85℃ MPPT (ISOS-L-3I) Stability Test: Place each group of devices in a fixture (with multi-channel maximum power point tracking function) that is continuously cleaned with nitrogen, and then place the fixture on a hot stage. Keep H2O and O2 < 0.1ppm, set the hot stage temperature to 85℃, and use LED lamps, metal halide lamps or xenon lamps as light sources. MPPT is achieved by real-time measurement and closed-loop control of the output voltage and current values ​​of photovoltaic cells. The software automatically records the power change with aging time.

[0168] As can be seen from the data in Table 1, the solar cell devices 1-9 in Examples 1-9 all used a composite electron transport layer composed of a protective layer and / or an electron extraction layer and a first tin oxide layer. Their initial efficiency, dark-state storage stability at 85℃, and MPPT stability at 85℃ were all higher than those in Comparative Examples 1-2. This indicates that the use of a composite electron transport layer in solar cells in this application can reduce costs while significantly improving the photoelectric conversion efficiency of solar cells.

[0169] As can be seen from Example 1 and Comparative Example 1, replacing the electron extraction layer with fullerene C, which is commonly used in the prior art, can improve performance. 60 Its initial efficiency, 85℃ dark storage stability, and 85℃ MPPT stability test results are all lower than those of Example 1.

[0170] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural or procedural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A solar cell, wherein, The solar cell comprises at least a perovskite layer and a composite electron transport layer located on one side of the perovskite layer, wherein the composite electron transport layer comprises at least an electron extraction layer and a first tin oxide layer, and the first tin oxide layer is located on the side of the electron extraction layer away from the perovskite layer. The electron extraction layer comprises at least one of a perylene imide and derivatives thereof, a naphthalene imide and derivatives thereof, and a semiconductor compound.

2. The solar cell of claim 1, wherein, The electronic extraction layer has an electrical conductivity greater than or equal to 1 x 10 -5 S-cm -1 and less than or equal to 1 x 10 2 S-cm -1 .

3. The solar cell of claim 1 or 2, wherein, The thickness of the electron extraction layer is 1 nm to 20 nm.

4. The solar cell according to any one of claims 1 to 3, wherein The thickness of the first tin oxide layer is 10 nm to 30 nm.

5. The solar cell according to any one of claims 1 to 4, wherein The work function of the first tin oxide layer is Wf=4.4 eV to 4.56 eV.

6. The solar cell according to any one of claims 1 to 5, wherein The roughness of the first tin oxide layer is RMS=0.4 nm to 0.6 nm.

7. The solar cell according to any one of claims 1 to 6, wherein The perylene imide and derivatives thereof comprise a perylene imide group and a first substituent, wherein the first substituent comprises a first group connected to a C atom in the perylene imide group and a second group connected to an N atom in the perylene imide group, and the first group comprises a halogen group, a triazine group, a fluorene group, and a benzodithiophene group; and the second group comprises an alkyl group.

8. The solar cell according to any one of claims 1 to 7, wherein at least one of the perylene imides and derivatives thereof includes PDI-Br Ta-PDI SF-PDI4 PF-PDI PBDT-PDI at least one of the perylene imides and derivatives thereof includes PDI-Br 9. The solar cell as claimed in any one of claims 1 to 8, wherein, The naphthalene imide and derivatives thereof comprise a naphthalene imide group and a second substituent, wherein the second substituent comprises a third group connected to a C atom in the naphthalene imide group and a fourth group connected to an N atom in the naphthalene imide group, and the third group comprises at least one of a halogen group, a heterocyclic ring or a benzo-heterocyclic ring, and a substituted or unsubstituted benzene ring group, and the fourth group comprises an alkyl group and an aromatic group.

10. The solar cell of claim 9, wherein, the third group comprises at least one of a thiophene group, a fluorene group, a benzodithiophene group.

11. The solar cell as claimed in any one of claims 1 to 10, wherein, The naphthalimides and derivatives thereof include BF-NDI4 and NDI-ID at least one of R and S enantiomers.

12. The solar cell according to any one of claims 1 to 11, wherein The electron mobility of the semiconductor compound is in the range of 500 cm 2 V -1 s -1 ~ 10000 cm 2 V -1 s -1 .

13. The solar cell according to any one of claims 1 to 12, wherein The semiconductor compound comprises at least one of SnO2, ZnO, PbS, and TiO2.

14. The solar cell according to any one of claims 1 to 13, wherein The electron extraction layer comprises a second tin oxide layer, and the work function of the first tin oxide layer is less than the work function of the second tin oxide layer.

15. The solar cell of claim 14, wherein, The work function of the second tin oxide layer is Wf=4.586 eV to 4.604 eV.

16. The solar cell of claim 14 or 15, wherein, The roughness of the second tin oxide layer is RMS=0.7 nm to 0.9 nm.

17. The solar cell of any one of claims 1 to 16, wherein, The composite electron transport layer further comprises a protective layer located on the side of the electron extraction layer facing the perovskite layer.

18. The solar cell of claim 17, wherein, The protective layer comprises at least one of LiF, Al2O3, and SiO2.

19. The solar cell of claim 18, wherein, The protective layer is in a non-continuous island structure.

20. The solar cell of claim 17, wherein, The protective layer comprises at least one of ZnO, PbS, and TiO2.

21. The solar cell of claim 20, wherein, The protective layer is in a non-continuous island structure or a continuous film layer.

22. The solar cell of any of claims 17 to 21, wherein, The thickness of the protective layer is greater than 0 and less than or equal to 2 nm.

23. The solar cell of any of claims 17 to 22, wherein, The total thickness of the protective layer and the electron extraction layer is 3 nm to 10 nm.

24. The solar cell as claimed in any one of claims 1 to 23, wherein, The solar cell is a trans-perovskite solar cell comprising a first electrode, a hole transport layer, the perovskite layer, the composite electron transport layer, and a second electrode arranged in sequence.

25. A method for producing a solar cell, for producing a solar cell as claimed in any one of claims 1 to 24, wherein, The method comprises: arranging a perovskite layer; arranging a composite electron transport layer on the perovskite layer, wherein the composite electron transport layer comprises: arranging an electron extraction layer on the perovskite layer; arranging a first tin oxide layer on the electron extraction layer, wherein the electron extraction layer comprises at least one of a perylene imide and derivatives thereof, a naphthalene imide and derivatives thereof, and a semiconductor compound.

26. The method of producing a solar cell according to claim 25, wherein The electron extraction layer is disposed on the perovskite layer by at least one of evaporation, spin coating, physical vapor deposition, reactive plasma deposition, or pulsed laser deposition; and the first tin oxide layer is disposed on the electron extraction layer by atomic layer deposition.

27. The method of producing a solar cell according to claim 25, wherein The step of disposing the electron extraction layer on the perovskite layer is: A protective layer is disposed on the perovskite layer, and the electron extraction layer is disposed on the protective layer.

28. An electrical device, comprising: A method of manufacturing a solar cell including the solar cell of any one of claims 1 to 24 or the solar cell of any one of claims 25 to 27.

29. An electricity generating device wherein, A method of manufacturing a solar cell including the solar cell of any one of claims 1 to 24 or the solar cell of any one of claims 25 to 27.

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