Electronic device manufacturing aqueous solution, method for producing resist pattern, and method for manufacturing device

Abstract

To provide an electronic device manufacturing aqueous solution that can reduce defects. An electronic device manufacturing aqueous solution comprising an alcohol (A), an alcohol (B) and a solvent (S).

Description

[DESCRIPTION][Title of Invention] ELECTRONIC DEVICE MANUFACTURING AQUEOUS SOLUTION, METHOD FOR PRODUCING RESIST PATTERN, AND METHOD FOR MANUFACTURING DEVICE[Technical Field]

[0001] The present disclosure relates to an electronic device manufacturing aqueous solution, a method for producing a resist pattern, and a method for manufacturing a device.[Background Art]

[0002] In recent years, there is an increasing need for highly integrated LSIs, and pattern miniaturization is demanded. In order to meet these needs, lithography processes using short wavelength KrF excimer laser (248 nm), ArF excimer laser (193 nm), extreme ultraviolet radiation (EUV; 13 nm), X-rays, electron beams, or the like are being put into practical use. In order to deal with the miniaturization of resist patterns, a photosensitive resin composition used as a resist in microfabrication is also required to have properties for high resolution. Short-wavelength light exposure can form finer patterns, however, due to creating very fine structures, there is an issue of reduced yield such as fine pattern collapse.

[0003] PTL 1 describes that a chemical rinse solution containing an alcohol-based chemical substance is applied to a developed layer of a photoresist, and a substrate is then spin-dried.

[0004] PTL 2 describes a specific process liquid composition for reducing microbridge defects in polyhydroxystyrene-containing photoresist patterns limited to an extreme UV exposure source.[Citation List][Patent Literature]

[0005] [PTL 1] US 2008 / 0280230 A1[PTL 2] WO 2019 / 240397[Summary of Invention][Technical Problem]

[0006] The inventors believed that there were still one or more problems which needed to be improved. Examples of such problems include: reducing defects in a fine resist pattern; uniformly applying an electronic device manufacturing aqueous solution to resist patterns; suppressing the occurrence of bridging in a resist pattern; enabling to form a finer resist pattern; preventing resist pattern collapse in a fine resist pattern; suppressing uneven resist pattern width; reducing residues after removal of an electronic device manufacturing aqueous solution; reducing surface tension of an electronic device manufacturing aqueous solution; providing an electronic device manufacturing aqueous solution exhibiting low risk of handling; providing an electronic device manufacturing aqueous solution with excellent storage stability (for example, long-term storage); and providing an electronic device manufacturing aqueous solution exerting less influence on resist patterns; providing an electronic device manufacturing aqueous solution that has minimal environmental impact; and reducing the amount of the surfactant in the electronic device manufacturing aqueous solution.

[0007] The present invention has been made based on the technical background as described above, and provides an electronic device manufacturing aqueous solution.

[0008] An electronic device manufacturing aqueous solution according to one embodiment comprises an alcohol (A), an alcohol (B) and a solvent (S), wherein the alcohol (A) and the alcohol (B) are represented by following Formulae (A) and (B), respectively, RA-OH Formula (A) RB-OH Formula (B)RA is C1-6 alkyl, and RB is C7-15 alkyl, part or all of H atoms in RA and / or RB may or may not be substituted with F; the solvent (S) comprises water (S-1 ); and a sum of contents of the alcohol (A) and the alcohol (B) based on the electronic device manufacturing aqueous solution is 0.01 to 8 mass%.

[0009] A method for producing a resist pattern according to one embodiment comprises using the aforementioned electronic device manufacturing aqueous solution.

[0010] A method for manufacturing a device according to one embodiment comprises the aforementioned method for producing a resist pattern.[Advantageous Effects of Invention]

[0011] By using the electronic device manufacturing aqueous solution of the present disclosure, the following one or more effects can be desired. Defects in a fine resist pattern can be reduced. The electronic device manufacturing aqueous solution can be uniformly applied to resist patterns. The occurrence of bridging in a resist pattern can be suppressed. A finer resist pattern can be formed. Resist pattern collapse in a fine resist pattern can be prevented. Uneven resist pattern width can be suppressed. The residues after removing the electronic device manufacturing aqueous solution can be reduced. Surface tension of an electronic device manufacturing aqueous solution can be reduced. An electronic device manufacturing aqueous solution with less risk of handling can be provided. An electronic device manufacturing aqueous solution with excellent storage stability (for example, long-term storage) can be provided. An electronic device manufacturing aqueous solution with little effect on resist patterns can be provided. An electronic device manufacturing aqueous solution with minimal environmental impact can be provided. The amount of the surfactant in the electronic device manufacturing aqueous solution can be reduced.

[0012] The above description is not to be construed as disclosing all embodiments of the present invention and all advantages related to the present invention. [Brief Description of Drawings]

[0013] [Fig. 1]Fig. 1 is a schematic view showing the state in which a resist wall is rinsed. [Description of Embodiments]

[0014] Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments, and various applications can be made within the spirit and scope of the present invention.

[0015] DefinitionsIn the present disclosure, unless otherwise specifically stated, terms and symbols follow the definitions or examples described in this paragraph.The singular form includes the plural form, and the terms “a” and “the” mean “at least one.” An element of a certain concept can be expressed as a plurality of types, and when an amount thereof (for example, mass% or mol%) is described, the amount means a sum of the amounts of the plurality of types.The term “and / or” includes all combinations of elements, and also includes the use of a single element.When a numerical range is expressed using “to” or the range includes values at both ends, and the units are the same. For example, 5 to 25 mol% is 5 mol% or more and 25 mol% or less.Notations such as “Cx-y”. “Cx to Cy” and “Cx” refer to the number of carbon atoms in a molecule or substituent. For example, C1-6 alkyl is an alkyl chain having 1 or more and 6 or less carbon atoms (methyl, ethyl, propyl, butyl, pentyl, hexyl, etc.).When a polymer has a plurality of structural units, monomers that form these structural units are copolymerized in the polymer. The copolymerization may be any of alternating copolymerization, random copolymerization, block copolymerization,graft copolymerization, and a mixture thereof. When polymers and resins are represented by structural formulae, the symbols n, m and the like in parentheses indicate the number of structural units.Degrees Celsius is used as the temperature unit. For example, 20 degrees is 20 degrees Celsius.The additive is a compound itself that exhibits the function. For example, a base generator is a compound that generates a base. There may also be an embodiment in which the compound is dissolved or dispersed in a solvent and is added to a composition. In one embodiment, such a solvent is preferably contained in the composition of the present disclosure as a solvent (S) or another component.

[0016] < Electronic Device Manufacturing Aqueous Solution >An electronic device manufacturing aqueous solution according to one embodiment comprises an alcohol (A), an alcohol (B) and a solvent (S).

[0017] In the present disclosure, the electronic device manufacturing aqueous solution is used during a process of manufacturing an electronic device. The electronic device manufacturing aqueous solution may be used in a process of manufacturing the electronic device and may be removed or eliminated in the course of the process. Examples of the electronic device include display devices, LEDs, and semiconductor devices.

[0018] The electronic device manufacturing aqueous solution may be a semiconductor manufacturing aqueous solution, is preferably a semiconductor substrate fabricating aqueous solution; more preferably a semiconductor substrate fabrication process cleaning liquid; still more preferably a lithography cleaning liquid; and even more preferably a resist pattern cleaning liquid. The electronic device manufacturing aqueous solution, which is a semiconductor substrate fabricating aqueous solution, can also be referred to as a semiconductor substrate fabricating aqueous solution, which consists of only the electronic device manufacturing aqueous solution of the present disclosure.

[0019] In another embodiment, the electronic device manufacturing aqueous solution may be a rinse composition used for rinsing an exposed and developed resist pattern.

[0020] Alcohol (A)The alcohol (A) is represented by Formula (A).RA-OH Formula (A) In the formula,RA is C1-6 alkyl, preferably C3-6 alkyl, and more preferably C3-5 alkyl. Part or all of H atoms in RA may or may not be substituted with F. It is more preferable that all H atoms are not substituted. RA may be linear, branched, or cyclic alkyl, or a combination of any of these, and is preferably linear alkyl or branched alkyl. The alcohol (A) may be a primary alcohol, a secondary alcohol, or a tertiary alcohol, and is preferably a primary alcohol or a secondary alcohol. The alcohol (A) may be used alone or a mixture of two or more alcohols having different RA may be used.

[0021] (The number of carbon atoms of the alcohol (B) I the number of carbon atoms of the alcohol (A)) is preferably 1 to 10 (more preferably 1 to 5; still more preferably 1 .2 to 4.0; and even more preferably 1 .2 to 3.0). When the alcohol (A) and / or the alcohol (B) are mixtures of two or more types, the number of carbon atoms of the alcohol (A) and / or the number of carbon atoms of the alcohol (B) are an average number of carbon atoms calculated based on the number of molecules.

[0022] Specific examples of the alcohol (A) include methanol; ethanol; 1 -propanol, 2- propanol; 1-butanol, 2-butanol, 2-methyl-1 -propanol, tert-butanol; 1-pentanol, 2- pentanol, 3-pentanol, 2-methyl-1 -butanol, 3-methyl-1 -butanol, 2-methyl-2-butanol, 3-methyl-2-butanol, 2,2-dimethyl-1-propanol, cyclopentanol; 1-hexanol, 2-hexanol, 3-hexanol, 2-methyl-1 -pentanol, 2-methyl-2-pentanol, 3-methyl-3-pentanol, 4- methyl-2-pentanol, 2-ethyl-1 -butanol, and cyclohexanol; and partially fluorinated compounds and fully fluorinated compounds thereof. The alcohol (A) is preferably 1-propanol, 2-propanol, 2-pentanol, and 4-methyl-2-pentanol, more preferably 2-propanol, 2-pentanol, and 4-methyl-2-pentanol, and still more preferably 2-propanol and 2-pentanol.

[0023] The content of the alcohol (A) based on the electronic device manufacturing aqueous solution is preferably 0.009 to 7.999 mass%, more preferably 0.01 to 6.0 mass%, still more preferably 0.05 to 5.5 mass%, and even more preferably 0.1 to 5.0 mass%.

[0024] Alcohol (B)The alcohol (B) is represented by Formula (B). RB-OH Formula (B) In the formula, B is C7-15 alkyl, preferably C7-12 alkyl, and more preferably C7-10 alkyl. Part or all of H atoms in RB may or may not be substituted with F. It is more preferable that all H atoms are not substituted. RB may be linear, branched, or cyclic alkyl, or a combination of any of these, and is preferably linear alkyl or branched alkyl. The alcohol (B) may be a primary alcohol, a secondary alcohol, or a tertiary alcohol and is preferably a primary alcohol or a secondary alcohol. The alcohol (B) may be used alone or a mixture of two or more alcohols having different RB may be used.

[0025] Specific examples of the alcohol (B) include 1 -heptanol, 2-heptanol, 2-methyl- 2-hexanol, cycloheptanol; 1 -octanol (capryl alcohol), 2-octanol, 2-ethyl-1 -hexanol;1-nonanol, 2-nonanol, 4-nonanol, 5-nonanol, 3,5,5-trimethyl-1-hexanol; 1-decanol,2-decanol, 4-decanol, 5-decanol, 2-propyl-1 -heptanol; 1 -undecanol, 2-undecanol; 1- dodecanol (lauryl alcohol), 2-dodecanol, 2-butyl-1 -octanol; 1 -tridecanol, 2- tridecanol; 1 -tetradecanol (myristyl alcohol), 2-tetradecanol; 1 -pentadecanol, and 2- pentadecanol; and partially fluorinated compounds and fully fluorinated compounds thereof. The alcohol (B) is preferably 1 -heptanol, 2-heptanol, 2-octanol, and 2-ethyl- 1 -hexanol, and more preferably 2-heptanol, 2-octanol, and 2-ethyl-1 -hexanol.

[0026] The surface tension of an aqueous solution obtained by adding the alcohol (B) to water (S-1) at a concentration of 500 ppm is preferably 80% or less, morepreferably 70% or less, and still more preferably 65% or less, of the surface tension of a liquid containing only water (S-1). The decrease in surface tension due to the addition of the alcohol (B) suggests that the alcohol (B) has a surfactant effect. The surface tension is measured by a capillary rise type surface tension meter.

[0027] The content of the alcohol (B) based on the electronic device manufacturing aqueous solution is preferably 0.001 to 1 mass%, more preferably 0.005 to 0.8 mass%, and still more preferably 0.01 to 0.5 mass%.

[0028] The sum of the contents of the alcohol (A) and the alcohol (B) based on the electronic device manufacturing aqueous solution is 0.01 to 8 mass%, preferably 0.1 to 5.0 mass%, more preferably 0.1 to 4.0 mass%, and still more preferably 0.2 to 3.0 mass%.

[0029] The ratio of the contents of the alcohol (A) and the alcohol (B) (the content of the alcohol (A) I the content of the alcohol (B)) is preferably 1 to 50, more preferably 2 to 45, and still more preferably 5 to 40.

[0030] As described in Namatsu et al. Appl. Phys. Lett. 1995(66) p. 2655-2657, and schematically shown in Fig. 1 , the stress applied to the resist wall during rinsing and drying due to the capillary phenomenon of the rinsing composition can be expressed by the following formula.Omax = (6ycos0 / D) x (H / W)2Omax: maximum stress applied to the resist wall, y: surface tension of the rinsing composition0: contact angle, D: interval between wallsH: wall height, W: wall widthThese parameters can be measured by known methods, for example, using an SEM image.

[0031] As can be understood from the above formula, a smaller D or a smaller W causes a larger stress to be generated. In the present disclosure, “pitch size” refersto one unit of a resist pattern unit array having W and D as shown in Fig. 1 . This means that, the finer a resist pattern is required to be (the smaller the pitch size), the higher the stress applied to the resist pattern. Thus, as the pattern becomes finer, conditions become more stringent, and more improvements are required for an electronic device manufacturing aqueous solution (for example, a rinsing composition).

[0032] In particular, when the resist pattern is washed or rinsed, if the resist pattern swells due to components in the electronic device manufacturing aqueous solution, the interval D between walls decreases, and the stress applied to the resist wall increases. As a result of the swelling of the resist pattern, the rigidity of the resist pattern may decrease or a resist pattern with dimensions different from desired dimensions may be created.

[0033] The electronic device manufacturing aqueous solution of the present disclosure comprises an alcohol having short-chain C1-6 alkyl (A) and an alcohol having long-chain C7-15 alkyl (B) in combination. Without being bound by any theory, it is thought that the alcohol having long-chain alkyl (B) functions as a type of surfactant, and lowers the surface tension of the electronic device manufacturing aqueous solution. Lowering the surface tension of the electronic device manufacturing aqueous solution is advantageous in suppressing resist collapse. On the other hand, since an alcohol having long-chain alkyl (B) has a low affinity for water, it is more likely to penetrate into the resist, which is more hydrophobic than water, and may cause the resist to swell. The alcohol having short-chain alkyl (A) is easily dissolved in water and exists in a uniform state in the electronic device manufacturing aqueous solution. Since the alcohol having short-chain alkyl (A) has a high affinity with the alcohol having long-chain alkyl (B), the alcohol (A) present in the electronic device manufacturing aqueous solution increases the solubility of the alcohol (B) in water, and penetration of the alcohol (B) into the resist can be suppressed. Therefore, the surfactant effect of the alcohol (B) can be effectively utilized to reduce the surface tension of the electronic device manufacturingaqueous solution and to reduce swelling of the resist. When these effects work synergistically, resist collapse can be effectively reduced.

[0034] Solvent (S)The solvent (S) comprises water (S-1). The water (S-1) is preferably deionized water (DIW).

[0035] Considering use of the solvent (S) in an electronic device manufacturing step, and more preferably, in a semiconductor manufacturing step, it is preferable that the solvent (S) contain few impurities. The impurity concentration of the solvent (S) is preferably 1 ppm or less, more preferably 100 ppb or less, and still more preferably 10 ppb or less. In the present disclosure, impurities in the solvent (S) refer to components other than water (S-1 ) and other solvents (S) to be described below, for example, metal ions such as sodium ions.

[0036] The content of water (S-1) based on the solvent (S) is preferably 90 to 100 mass%, more preferably 98 to 100 mass%, still more preferably 99 to 100 mass%, and even more preferably 99.9 to 100 mass%. In a preferred embodiment of the present disclosure, the solvent (S) is substantially composed of only water (S-1). However, an embodiment in which additives to be described below that are dissolved and / or dispersed in a solvent other than water (S-1 ) (for example, a surfactant) are contained in an electronic device manufacturing aqueous solution is acceptable as a preferred embodiment of the present disclosure. In a more preferred embodiment of the present disclosure, the content of the water (S-1) contained in the solvent (S) is 100 mass%.

[0037] Specific examples of the solvent (S) other than water (S-1) include cyclohexanone, cyclopentanone, propylene glycol monomethyl ether (PGM E), propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol 1-monomethyl ether 2-acetate (PGMEA), propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, y-butyrolactone, ethyl lactate, and mixed solutions thereof. These are preferable in terms of storage stability of the solution. These may be used alone or a mixture of two or more thereof may be used.

[0038] The content of the solvent (S) based on the electronic device manufacturing aqueous solution is preferably 80 to 99.99 mass%, more preferably 90 to 99.99 mass%, still more preferably 95 to 99.99 mass%, and even more preferably 98 to 99.99 mass%.

[0039] The content of the water (S-1) contained in the solvent (S) based on the electronic device manufacturing aqueous solution is preferably 80 to 99.99 mass%, more preferably 90 to 99.99 mass%, still more preferably 95 to 99.99 mass%, and even more preferably 98 to 99.99 mass%.

[0040] The electronic device manufacturing aqueous solution of the present disclosure essentially comprises the components (A), (B) and (S), and may comprise additional compounds, as necessary. The content (a total content if there are a plurality of components) of components other than (A), (B) and (S) in the entire composition based on the electronic device manufacturing aqueous solution is preferably 0 to 10 mass%, more preferably 0 to 5 mass%, still more preferably 0 to 3 mass%, and even more preferably 0.0001 to 1 mass%. An embodiment in which the electronic device manufacturing aqueous solution does not comprise any components other than (A), (B) and (S) (the content of other components is 0 mass%) is also a preferred embodiment of the present disclosure.

[0041] Basic Compound (C)The electronic device manufacturing aqueous solution of the present disclosure may comprise a basic compound (C). Examples of the basic compound (C) include ammonia, primary amines, secondary amines, tertiary amines, and ammonium compounds. These compounds may be unsubstituted or substituted with one or more substituents. When the basic compound (C) is contained, it is possible to further suppress pattern collapse. Without being bound by any theory, itis thought that, when the basic compound (C) is contained, it is possible to reduce the influence of other components on the resist pattern. The basic compounds (C) may be used alone or a mixture of two or more thereof may be used.

[0042] The basic compound (C) preferably comprises at least one selected from the group consisting of nitrogen-containing compounds (C-1 ), (C-2) and (C-3). More preferably, the basic compound (C) does not comprise the nitrogen-containing compound (C-2). Still more preferably, the basic compound (C) is composed of only the nitrogen-containing compound (C-1 ) or (C-3). In the present disclosure, the nitrogen-containing compounds (C-1), (C-2) and (C-3) are the forms in the preparation of the electronic device manufacturing aqueous solution, not the forms present in the electronic device manufacturing aqueous solution. For example, when an electronic device manufacturing aqueous solution is prepared using ammonia (NHs) corresponding to the nitrogen-containing compound (C-1), at least a part of ammonia exists in the aqueous solution in the form of ammonium hydroxide (NH4+OH_) corresponding to the nitrogen-containing compound (C-2) depending on the pH of the aqueous solution. In the present disclosure, the nitrogen-containing compound (C-2) produced in the electronic device manufacturing aqueous solution, which is derived from the nitrogen-containing compound (C-1) during preparation, is regarded as the nitrogen-containing compound (C-1).

[0043] The nitrogen-containing compound (C-1) is represented by Formula (C-1). NHqiRc13-qi Formula (C-1) In the formula, Rc1s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q1 is 0, 1 , 2, or 3. Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, and n-propyl are preferable. Preferably, the C1-7 alkyl is not substituted with OH. q1 is preferably 1 , 2, or 3, more preferably 2 or 3, and still more preferably 3.

[0044] Specific examples of the nitrogen-containing compound (C-1) include ammonia; methylamine, ethylamine, isopropylamine, n-butylamine, tert-butylamine, cyclohexylamine, monoethanolamine; dimethylamine, diethylamine, methylethylamine, dicyclohexylamine, diethanolamine; trimethylamine, triethylamine, tri(n-propyl)amine, dimethylethylamine, tricyclohexylamine, dimethylaminoethanol, and triethanolamine.

[0045] The nitrogen-containing compound (C-2) is represented by Formula (C-2).+NHq2Rc24-q2 OH' Formula (C-2)In the formula, Rc2s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q2 is 0, 1 , 2, 3, or 4. Examples of C1-7 alkyl include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n-hexyl, 4-methylpentyl, n-heptyl, cyclopentyl, cyclohexyl, and cycloheptyl, and methyl, ethyl, and n-propyl are preferable. Preferably, the C1-7 alkyl is not substituted with OH. q2 is preferably 1 , 2, or 3, more preferably 2 or 3, and still more preferably 3.

[0046] Specific examples of the nitrogen-containing compound (C-2) include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra(n- propyl)ammonium hydroxide, tetraisopropylammonium hydroxide, tetrabutylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, triethylmethylammonium hydroxide, and triethylhydroxyethylammonium.

[0047] The nitrogen-containing compound (C-3) is represented by Formula (C-3).[C1]Formula (C_3)In the formula, Rc31, Rc32, Rc33and Rc34are each independently H or a C1-10 hydrocarbon group, and Lc3is a C1-10 hydrocarbon chain. Examples of the C1-10 hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secbutyl, tert-butyl, n-pentyl, 1 ,1 -dimethylpropyl, 2,2-dimethylpropyl, 3-methylbutyl, n- hexyl, 4-methylpentyl, n-heptyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, and cycloheptyl; methyl, ethyl, and n-propyl are preferable; and methyl is more preferable. Examples of the C1-10 hydrocarbon chain include methylene(- CH2-), ethylene (-CH2CH2-), 1 ,2-propylene (-CH(CH3)CH2-), 1 ,3-propylene (- CH2CH2CH2-), tetraethylene (-(CH2)4-), 1 ,4-cyclohexanediyl, and phenylene; methylene, ethylene, and 1 ,3-propylene are preferable; and ethylene is more preferable.

[0048] Specific examples of the nitrogen-containing compounds (C-3) include ethylene diamine, tetraethylene diamine, N,N-dimethylmethylenediamine, N,N,N’,N’-tetramethylethylene diamine, N,N,N’,N’-tetraethylethylene diamine, N,N,N’,N’-tetramethyltetraethylene diamine, and N,N,N’,N’- tetramethylhexamethylenediamine.

[0049] Examples of the basic compound (C) other than the nitrogen-containing compounds (C-1) to (C-3) include diethylene triamine, pentaethylene hexamine, N,N,N’,N”,N”-pentamethyldiethylene triamine, tris[2-(dimethylamino)ethyl]amine, tris[2-(2-methoxyethoxy)ethyl]amine, aniline, benzylamine, naphthylamine, N- methylaniline, 2-methylaniline, phenylalanine, pyrrole, oxazole, thiazole, imidazole, 4-methylimidazole, pyridine, methylpyridine, butylpyridine, piperidine, piperazine, and morpholine.

[0050] The basic compound (C) is preferably at least one selected from the group consisting of ammonia, n-butylamine, ethylene diamine, triethylamine, tripropylamine, and N,N,N’,N’-tetramethylethylene diamine.

[0051] The content of the basic compound (C) based on the electronic device manufacturing aqueous solution is preferably 0.0001 to 10 mass%, more preferably0.0005 to 1.0 mass%, and still more preferably 0.001 to 0.01 mass%. An embodiment in which the electronic device manufacturing aqueous solution does not comprise the basic compound (C) (0.0000 mass%) is also a preferred embodiment of the present disclosure.

[0052] Resin (D)The electronic device manufacturing aqueous solution of the present disclosure may comprise a resin (D). The resin (D) means an organic polymer having a relatively large molecular weight, and in the present disclosure, the resin (D) means a compound having a molecular weight of 1 ,000 or more. Examples of the resin (D) include novolak derivatives, phenol derivatives, polystyrene derivatives, polyacrylic acid derivatives, polymethacrylic acid derivatives, polyacrylamide derivatives, polyethylene oxide derivatives, polyvinylamide derivatives, polyamine derivatives, polymaleic acid derivatives, polycarbonate derivatives, polyvinylpyrrolidone derivatives, polyvinyl alcohol derivatives, and copolymers of these combinations, and the resin (D) is preferably at least one selected from the group consisting of polyacrylic acid derivatives, polymethacrylic acid derivatives, and polyvinyl alcohol derivatives. The mass average molecular weight Mw of the resin (D) is preferably 1 ,500 to 300,000, more preferably 2,000 to 250,000, and still more preferably 2,500 to 200,000. In the present disclosure, the mass average molecular weight is in terms of polymethyl methacrylate, and is a value measured by gel permeation chromatography using polymethyl methacrylate as a standard. The resin (D) is used to adjust the viscosity of the electronic device manufacturing aqueous solution or to cure the coating film of the electronic device manufacturing aqueous solution to form a film. The resin (D) also includes a photosensitive resin that is generally contained in a photosensitive resin composition.

[0053] The content of the resin (D) based on the electronic device manufacturing aqueous solution is preferably 0 to 10 mass% (more preferably 0 to 3 mass%; still more preferably 0 to 1 mass%; and even more preferably 0 to 0.1 mass%). An embodiment in which the electronic device manufacturing aqueous solution doesnot comprise any resin (D) (the content of the resin (D) is 0 mass%) is a particularly preferred embodiment of the present disclosure.

[0054] Additive (E)The electronic device manufacturing aqueous solution of the present disclosure may comprise an additive (E). The additive (E) preferably comprises at least one selected from the group consisting of other surfactants, acids, a disinfectant, an antibacterial agent, an antiseptic, and an antifungal agent.

[0055] The other surfactants are useful for improving applicability or solubility. The other surfactants are different from the aforementioned components (A) to (D), and as described above, the alcohol (B) having a surfactant effect is not included in the other surfactants. Examples of other surfactants include polyoxyethylene alkyl ether compounds such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene alkyl aryl ether compounds such as polyoxyethylene octyl phenyl ether, and polyoxyethylene nonyl phenyl ether; polyoxyethylene-polyoxypropylene block copolymer compounds; sorbitan fatty acid ester compounds such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan trioleate, and sorbitan tristearate; and polyoxyethylene sorbitan fatty acid ester compounds such as polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, and polyoxyethylene sorbitan tristearate. Other surfactants include, for example, fluorine-based surfactants such as EF-301 , EF-303, and EF-352 (Mitsubishi Materials Electronic Chemicals), MEGAFACE F171 , F173, R-08, R-30, and R-2011 (DIC), AsahiGuard AG710 (AGC), and SURFLON S-382, SC101 , SC102, SC103, SC104, SC105, and SC106 (AGC Seimi Chemical).

[0056] The acid can be used in order to adjust the pH value of the electronic device manufacturing aqueous solution or to improve the solubility of other additives (E). Examples of the acid include aromatic carboxylic acids. The additive (E) of the present disclosure is preferably acid-free.

[0057] The disinfectant, antibacterial agent, antiseptic, or antifungal agent can be used to prevent bacteria or fungi from growing in the electronic device manufacturing aqueous solution over time. Examples of these chemicals include alcohols such as phenoxyethanol, and isothiazolinone. BestCide (product name, Nippon Soda) is a more effective antibacterial agent and disinfectant.

[0058] The content of the additive (E) based on the electronic device manufacturing aqueous solution is preferably 0.0001 to 10 mass%, more preferably 0.0001 to 0.1 mass%, and still more preferably 0.0002 to 0.001 mass%. An embodiment in which the electronic device manufacturing aqueous solution does not comprise the additive (E) (0.0000 mass%) is also a preferred embodiment of the present disclosure.

[0059] After having the components dissolved, the electronic device manufacturing aqueous solution of the present disclosure can be filtered with a filter in order to remove impurities and / or insoluble matters.

[0060] The pH of the electronic device manufacturing aqueous solution is preferably 5.0 to 11.0, more preferably 5.5 to 10.5, and still more preferably 6.0 to 10.5. In the present disclosure, the pH of the electronic device manufacturing aqueous solution is measured at 25°C, under atmospheric conditions and 1 atm.

[0061] The surface tension of the electronic device manufacturing aqueous solution is preferably 25 to 70 mN / m, more preferably 25 to 60 mN / m, and still more preferably 25 to 50 mN / m. The surface tension is measured by a capillary rise type surface tension meter.

[0062] <Method for Producing Resist Pattern>The present disclosure also provides a method for producing a resist pattern using the aforementioned electronic device manufacturing aqueous solution. A photosensitive resin composition (resist composition) used in the method may be either a positive type or a negative type, and is preferably a positive type. Oneembodiment of a method for producing a resist pattern, to which the electronic device manufacturing aqueous solution of the present disclosure is applied, comprises the following steps of:(1) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the electronic device manufacturing aqueous solution.For clarity, the numbers in parentheses indicate the sequence of steps. For example, the step (3) is performed before (4). After (3), (3.1 ) is performed, and the step (4) is then performed.

[0063] Details will be described below.First, a photosensitive resin composition is applied (e.g., layered) above a substrate, such as a silicon substrate or a glass substrate, which has been pretreated as necessary, to form a photosensitive resin layer. A known method can be used for layering, but a coating method such as spin coating is suitable. The photosensitive resin composition can be directly layered on the substrate, or can be layered with one or more intermediate layers (e.g., BARC) interposed between the photosensitive resin composition and the substrate. An anti reflection film (e.g., TARC) may be layered above the photosensitive resin layer (on the side opposite to the substrate). A layer other than the photosensitive resin layer will be described later. The formation of the antireflection film above or below the photosensitive resin layer enables to improve the cross-sectional shape and the exposure margin.

[0064] Representative examples of the positive or negative photosensitive resin composition used in the method for producing a resist pattern of the present disclosure include positive photosensitive resin compositions comprising a quinonediazide-based photosensitive agent and an alkali-soluble resin, and chemically amplified photosensitive resin compositions. From a point of view offorming a high-resolution fine resist pattern, a chemically amplified photosensitive resin composition is preferable, and examples thereof include a chemically amplified PHS-acrylate hybrid EUV resist composition. These are more preferably positive photosensitive resin compositions.

[0065] Without being bound by theory, the inventors have contemplated as follows. The resist composition to be exposed to EUV is intended to form a finer resist pattern, but due to the properties of the resist compositions (e.g., high hydrophobicity), there is a challenge of an increased likelihood of defects occurring in the resulting resist patterns. It is believed that the use of the electronic device manufacturing aqueous solution of the present disclosure can prevent such defects and can clean the fine resist pattern.

[0066] Examples of the quinonediazide-based photosensitive agent to be used in the aforementioned positive photosensitive resin composition that comprises a quinonediazide-based photosensitive agent and an alkali-soluble resin include 1 ,2- benzoquinonediazide-4-sulfonic acid, 1 ,2-naphthoquinonediazide-4-sulfonic acid, 1 ,2-naphthoquinonediazide-5-sulfonic acid, and esters or amides of these sulfonic acids. Examples of the alkali-soluble resin include polyvinyl phenols, polyvinyl alcohols, acrylic acid copolymers, and methacrylic acid copolymers.

[0067] Examples of the chemically amplified photosensitive resin composition include a positive chemically amplified photosensitive resin composition in which a compound (a photoacid generator) that generates an acid upon irradiated with radiation and a resin whose polarity is increased by the action of the acid generated from the photoacid generator and solubility in a developer solution changes between an exposed portion and an unexposed portion are contained, and a negative chemically amplified photosensitive resin composition that comprises an alkali-soluble resin, a photoacid generator, and a crosslinking agent, in which crosslinking of the resin occurs by the crosslinking agent due to the action of the acid, and solubility in a developer solution changes between an exposed portion and an unexposed portion.

[0068] As the resin in which the polarity is increased by the action of the aforesaid acid and the solubility in a developer solution is changed between an exposed portion and an unexposed portion, example thereof include a resin in which a group that is decomposed by the action of the acid to generate an alkali-soluble group is included in the main chain or the side chain of the resin, or in both the main chain and the side chain of the resin. Representative examples thereof include a polymer in which an acetal group or a ketal group as a protecting group is introduced into a hydroxystyrene-based polymer (PHS) (e.g., JP H02-19847 A), and a similar polymer in which a t-butoxycarbonyloxy group or a p-tetrahydropyranyloxy group is introduced as a group for acidolysis (e.g., JP H02-209977 A).

[0069] The photoacid generator is not particularly limited as long as it is a compound that generates an acid upon irradiated with radiation, and examples thereof include onium salts such as diazonium salts, ammonium salts, phosphonium salts, iodonium salts, sulfonium salts, selenonium salts, and arsonium salts, organohalogen compounds, organometallic / organohalides, photoacid generators having an o-nitrobenzyl type protecting group, compounds that photodegrade to generate sulfonic acid such as iminosulfonates, disulfone compounds, diazoketosulfone compounds, and diazodisulfone compounds. Alternatively, there can also be used a polymeric photoacid generator in which a photoacid generating group of the aforementioned compound or the compound itself is introduced into a main chain or a side chain of the polymer.

[0070] The chemically amplified photosensitive resin composition may further comprise an acid-decomposable dissolution-inhibitive compound, a dye, a plasticizer, a surfactant, a photosensitizer, an organic basic compound, a compound that promotes solubility in a developer solution, etc., as necessary.

[0071] The aforementioned photosensitive resin composition is applied onto a substrate using, for example, an appropriate coating apparatus such as a spinner or a coater and a coating method, and heated to remove the solvent in thephotosensitive resin composition to form a photosensitive resin layer. The heating temperature is preferably 70 to 150°C, and more preferably 90 to 150°C. The heating time is preferably 10 to 600 seconds, more preferably 10 to 180 seconds, and still more preferably 30 to 120 seconds.

[0072] In the method for producing a resist pattern of the present disclosure, a film or a layer other than the photosensitive resin layer may also be present. The substrate and the photosensitive resin layer may not be in direct contact with each other, and an intermediate layer may be interposed between the substrate and the photosensitive resin layer. The intermediate layer refers to a layer formed between the substrate and the photosensitive resin layer, and is also referred to as a bottom layer. Examples of the bottom layer include a substrate modification film, a planarization film, a bottom anti-reflective coating (BARC), an inorganic hard mask intermediate layer (silicon oxide film, silicon nitride film or silicon oxynitride film), and an adhesion film. The planarization film is, for example, an SOC. Regarding the formation of an inorganic hardmask intermediate layer, for example, JP 5336306 B can be referred to. The intermediate layer may be one layer or may be composed of a plurality of layers. A top layer may be formed on the photosensitive resin layer. The top layer is, for example, a top anti-reflective coating (TARC).

[0073] In the method for producing a resist pattern of the present disclosure, a known layered structure can be used according to process conditions, and examples thereof include the following layered structures. substrate / photosensitive resin layer substrate / bottom layer / photosensitive resin layer substrate / planarization film / photosensitive resin layer substrate / planarization film / photosensitive resin layer / top layer substrate / planarization film / BARC / photosensitive resin layer substrate / planarization film / inorganic hardmask intermediate layer / photosensitive resin layer substrate / planarization film / adhesion film / photosensitive resin layersubstrate / substrate modification layer / planarization film / photosensitive resin layer and substrate / substrate modification layer / planarization film / adhesion film / photosensitive resin layer.These layers can be cured by heating and / or exposing to light after application, or can be deposited by using a known method such as a CVD method. These layers can be removed by a known method such as etching, and can be patterned by using each upper layer as a mask.

[0074] In one preferred embodiment of the present disclosure, the photosensitive resin composition is applied directly onto the substrate without interposing any intermediate layer. In another embodiment of the present disclosure, no TARC is formed on the photosensitive resin layer. In another embodiment of the present disclosure, a thickened resist pattern is formed by forming a thickened layer on the photosensitive resin layer, as described in WO 2022 / 129015.

[0075] The photosensitive resin layer is exposed to light through a predetermined mask. When other layers are also included (top layer, etc.), they may be exposed to light together. The wavelength of radiation (light) used for exposure is not particularly limited, but exposure with light having a wavelength of 13.5 to 248 nm is preferable. Specifically, a KrF excimer laser (248 nm in wavelength), an ArF excimer laser (193 nm in wavelength), extreme ultraviolet radiation (EUV, 13.5 nm in wavelength), or the like can be used, and EUV is more preferable. These wavelengths have an allowable range of ±5%, preferably have an allowable range of ±1 %. After the exposure, a post-exposure bake (PEB) can also be performed, as necessary. The temperature of the PEB is preferably 70 to 150°C, and more preferably 80 to 120°C. The heating time of the PEB is preferably 0.3 to 5 minutes, and more preferably 0.5 to 2 minutes.

[0076] Next, development is performed using a developer solution. In the development of the method for producing a resist pattern of the present disclosure, a 2.38 mass% (±1 % is allowed) tetramethylammonium hydroxide (TMAH) aqueoussolution is preferably used. A surfactant or the like can be added to this developer solution. The temperature of the developer solution is preferably 5 to 50°C, and more preferably 25 to 40°C. The development time is preferably 10 to 300 seconds, and more preferably 20 to 60 seconds. As a development method, a known method such as puddle developing can be used. As described above, the resist pattern of the present invention encompasses not only a resist pattern that is formed by exposing and developing a resist film but also a resist pattern that is coated with another layer or film and has an increased wall thickness.

[0077] The resist pattern (the developed photosensitive resin layer) created through the aforementioned steps is in an uncleaned condition. This resist pattern can be cleaned with the electronic device manufacturing aqueous solution of the present disclosure. The time for allowing the electronic device manufacturing aqueous solution to contact with the resist pattern, that is, the processing time is preferably 1 second or more. The treatment temperature can be freely chosen. The method for putting the electronic device manufacturing aqueous solution on the resist can also be freely chosen, and for example, the resist can be contacted with the electronic device manufacturing aqueous solution by immersing a resist substrate into the electronic device manufacturing aqueous solution or by dripping the electronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be appropriately combined.

[0078] In the method for producing a resist pattern of the present disclosure, before and / or after a cleaning process using the electronic device manufacturing aqueous solution, the resist pattern after development can be cleaned with another cleaning liquid. The other cleaning liquid is preferably water, and more preferably pure water (DIW, deionized water, etc.). The cleaning before the cleaning process is useful for cleaning the developer solution attached to the resist pattern. The cleaning after the cleaning process is useful for cleaning the electronic device manufacturing aqueous solution. A preferred embodiment of the method for producing a resist pattern of the present disclosure is a method in which pure water is poured into a developed resist pattern to clean the pattern while replacing a developer solution with purewater, and the electronic device manufacturing aqueous solution is poured into the resist pattern, while the pattern is immersed in pure water, to clean the pattern while replacing pure water with the electronic device manufacturing aqueous solution. Cleaning by another cleaning liquid or the electronic device manufacturing aqueous solution may be performed by a known method. For example, the cleaning can be performed by immersing a resist substrate into another cleaning liquid or the electronic device manufacturing aqueous solution or by dripping another cleaning liquid or the electronic device manufacturing aqueous solution onto the surface of a rotating resist substrate. These methods may be appropriately combined.

[0079] The method for producing a resist pattern according to one embodiment preferably further comprises the following step of:(3.1) applying a cleaning solution to a resist pattern and cleaning the developed layer.Step (3.1) is performed, as described above, after (3) developing the exposed photosensitive resin layer, and before (4) cleaning the developed layer with the electronic device manufacturing aqueous solution.

[0080] Pattern collapse is likely to occur at locations where the interval between the walls of the resist pattern is the smallest. Particularly, pattern collapse is noticeable at locations where the walls of the resist pattern are parallel. In the present disclosure, the distance between locations where the interval between the resist patterns is the smallest on one circuit unit is defined as the minimum space size. One circuit unit preferably forms one semiconductor device in a subsequent step. As one semiconductor device, an embodiment including one circuit unit in the horizontal direction and a plurality of circuit units in the vertical direction is also preferable. Unlike test samples, if there are fewer locations where the interval between the walls of the resist pattern is small, the frequency of defects occurring decreases, and as a result, the frequency of defective products occurring also decreases. The minimum space size of the resist pattern in one circuit unit is preferably 5 to 30 nm, more preferably 10 to 20 nm, and still more preferably 10 to 17 nm.

[0081] <Method of Manufacturing Device>A method for manufacturing a device of the present disclosure comprises the method for producing a resist pattern using the electronic device manufacturing aqueous solution.

[0082] <Method for Manufacturing Device>The method for manufacturing a device preferably comprises etching a substrate by using the resist pattern produced by the aforementioned method as a mask to process the substrate. After the processing, the resist film is peeled off as necessary. Preferably, the device is a semiconductor. The resist pattern is used as a mask for etching and thereby enabling to process the intermediate layer and / or the substrate. A known method such as dry etching or wet etching can be used for the etching, and dry etching is more suitable. For example, the resist pattern can be used as an etching mask to etch the intermediate layer, and the resultant intermediate layer pattern can be used as an etching mask to etch a substrate, thereby processing the substrate. The substrate can be directly etched while etching layers (e.g., an intermediate layer) below the resist layer by using the resist pattern as an etching mask. The processed substrate becomes, for example, a patterned substrate. The formed pattern can be used to form wiring on the substrate. The layers on the substrate can be removed by dry etching with O2, CF4, CHF3, Ch or BCh. As the dry etching gas, O2 or CF4 can be preferably used.

[0083] In the method for manufacturing a device, ion-doping can be performed on the substrate or the bottom layer using the resist pattern produced by the aforementioned method as a mask. Ion-doping is performed on the substrate or the bottom layer using the formed resist pattern as a mask, or the lower layer of the resist pattern is processed using the formed resist pattern as a mask to form a lower layer pattern, and ion-doping is performed on the substrate using the lower layer pattern as a mask. Ion-doping can be performed by a known method using a known ion-doping device. Generally, in the manufacturing of semiconductor devices, display devices, and the like, an impurity diffusion layer is formed on thesurface of a substrate. The impurity diffusion layer is usually formed in two steps of impurity introduction and diffusion. One of the methods of impurity introduction is ion-doping in which impurities such as phosphorus and boron are ionized in vacuum and accelerated at a high electric field to be implanted into the surface of the substrate or the layer. The ion acceleration energy during ion-doping is generally 10 to 200 keV. Examples of ion sources (impurity elements) include ions such as boron, phosphorus, arsenic, and argon. Examples of a thin film on the substrate include a thin film of silicon, silicon dioxide, silicon nitride, or aluminum.

[0084] The method for manufacturing a device preferably comprises forming wiring on the processed substrate.[Examples]

[0085] The present invention will be described below using various examples. Note that the aspects of the present invention are not limited to these examples.

[0086] Preparation Example of Electronic Device Manufacturing Aqueous Solution> The compounds used are shown in Table 1.

[0087] [Table 1]Table 1

[0088] Components shown in Table 2 are added to DIW in their respective amounts.The mixture is stirred at room temperature for 5 minutes. It is visually confirmed thatthe components are dissolved. The obtained solution is filtered (pore size = 10 nm) to obtain an electronic device manufacturing aqueous solution of each example.The pH of the aqueous solution of Example 1 is measured to be 6.2.

[0089] Experiment 1 : Performance Evaluation for DefectsA silicon substrate is treated with hexamethyldisilazane (HMDS) at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 35 nm. The obtained substrate is exposed using an EUV exposure system (ASML, NXE:3400) through a mask with a size of 18 nm (line:space = 1 :1). After carrying out post-exposure bake (PEB) at 110°C for 60 seconds, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated, and the rotation is stopped in a state of being paddled with rinse water. Then, while dripping the electronic device manufacturing aqueous solution onto the wafer in a state of being paddled with rinse water, cleaning is performed at low-speed rotation for 30 seconds, and rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0090] In Comparative Example 13, after the developing solution is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0091] The number of foreign matter on the pattern obtained is counted using a defect inspection apparatus UVision4 (Applied Materials), and the number is defined as the number of defects. The shape of foreign matter is evaluated using a defect observation equipment eDR7280 (KLA-Tencor).

[0092] The number of defects of Comparative Example 13 is used as the reference (100%), and the number of defects is evaluated according to the following criteria. A: The number of defects is less than 30%.B: The number of defects is 30% or more and less than 100%.C: The number of defects is 100% or more and 300% or less.D: All patterns are dissolved.

[0093] Experiment 2: Pattern Collapse EvaluationA cleaned resist pattern is obtained in the same procedure as in Experiment 1 . The number of pattern collapses is confirmed using UVision4 and eDR7280.

[0094] Experiment 3: Evaluation for Limit Pattern SizeA silicon substrate is treated with HMDS at 90°C for 30 seconds. A chemically amplified PHS-acrylate hybrid resist is spin-coated thereon, followed by soft baking at 110°C for 60 seconds to form a resist film with a thickness of 50 nm. The obtained substrate is exposed using NXE:3400 through a mask with a size of 16 nm (line:space = 1 :1 ). After carrying out PEB at 110°C for 60 seconds, paddle development is performed with a 2.38% TMAH aqueous solution for 30 seconds. Rinse water starts to flow in a state where the developer solution is paddled on the wafer, and the developer solution is replaced with rinse water while being rotated, and the rotation is stopped in a state of being paddled with rinse water. Then, while dripping the electronic device manufacturing aqueous solution onto the wafer in a state of being paddled with rinse water, cleaning is performed at low-speed rotation for 30 seconds, and rinse water is replaced with the electronic device manufacturing aqueous solution. Thereafter, high-speed rotation processing is performed to dry the wafer.

[0095] In Comparative Example 13, after the developing solution is replaced with rinse water, high-speed rotation processing is performed to dry the wafer.

[0096] CD measurement SEM CG6300 (Hitachi High-Tech Corporation) is used to confirm the line width and the presence or absence of pattern collapse. As the exposure increases, the line width decreases. The size of minimum line width at which no pattern collapse occurs is defined as a “limit pattern size”. For example, in Comparative Example 13, a pattern collapse is confirmed at a line width of 16.4 nm,while a pattern collapse is not confirmed at a line width of 16.8 nm, and thus the limit pattern size is determined to be 16.8 nm.

[0097] Experiment 4: LWR Evaluation An evaluation substrate is fabricated in the same procedure as in Experiment 3, and the LWR of the formed resist pattern is evaluated. Using CG6300, the line width roughness (LWR) of the resist pattern with a line width of 16 nm is measured.

[0098] Experiment 5: Surface Tension Measurement The surface tension of each electronic device manufacturing aqueous solution is measured using a capillary rise type surface tension meter DG-1 (Surfgauge INSTRUMENTS).

[0099] Table 2 to Table 4 show formulations and evaluation results of electronic device manufacturing aqueous solutions.

[0100] [Table 2]Table 2Table 4

Claims

[CLAIMS]

1. An electronic device manufacturing aqueous solution comprising an alcohol (A), an alcohol (B) and a solvent (S), wherein the alcohol (A) and the alcohol (B) are represented by following Formulae (A) and (B), respectively: RA-OH Formula (A) RB-OH Formula (B)RA is C1-6 alkyl, and RB is C7-15 alkyl, part or all of H atoms in RA and / or RB may or may not be substituted with F; the solvent (S) comprises water (S-1 ); and a sum of contents of the alcohol (A) and the alcohol (B) based on a mass of the electronic device manufacturing aqueous solution is 0.01 to 8 mass%.

2. The electronic device manufacturing aqueous solution according to claim 1 , whereinRA is linear, branched, or cyclic alkyl, or a combination of any of these; or RB is linear, branched, or cyclic alkyl, or a combination of any of these.

3. The electronic device manufacturing aqueous solution according to claim 1 or 2, which has a pH of 5.0 to 11 .0, wherein the pH is measured at 25°C, under atmospheric conditions and 1 atm.

4. The electronic device manufacturing aqueous solution according to any one of claims 1 to 3, which has a surface tension of 25 to 70 mN / m, wherein the surface tension is measured by a capillary rise type surface tension meter.

5. The electronic device manufacturing aqueous solution according to any one of claims 1 to 4, whereina content of the alcohol (A) based on the electronic device manufacturing aqueous solution is 0.009 to 7.999 mass%; a content of the alcohol (B) based on the electronic device manufacturing aqueous solution is 0.001 to 1 mass%; a content of the solvent (S) based on the electronic device manufacturing aqueous solution is 80 to 99.99 mass%; or a content of the water (S-1 ) contained in the solvent (S) based on the electronic device manufacturing aqueous solution is 80 to 99.99 mass%.

6. The electronic device manufacturing aqueous solution according to any one of claims 1 to 5, further comprising a basic compound (C), wherein, optionally, a content of the basic compound (C) based on the electronic device manufacturing aqueous solution is 0.0001 to 10 mass%.

7. The electronic device manufacturing aqueous solution according to any one of claims 1 to 6, further comprising a basic compound (C), wherein the basic compound (C) comprises at least one selected from the group consisting of nitrogen-containing compounds (C-1 ), (C-2) and (C-3): where the nitrogen-containing compounds (C-1 ), (C-2) and (C-3) are represented by Formula (C-1), Formula (C-2) and Formula (C-3), respectively:NHqi Rc13-qi Formula (C-1 ) whereRc1s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q1 is 0, 1 , 2, or 3;+NHq2Rc24-q2 OH' Formula (C-2) whereRc2s are each independently C1-7 alkyl, one or more H atoms in the C1-7 alkyl may or may not be substituted with OH, and q2 is 0, 1 , 2, 3, or 4;[Chemi]Formula (C-3) whereRc3i , Rc32, Rc33and Rc34are each independently H or a C1-10 hydrocarbon group, and Lc3is a C1-10 hydrocarbon chain.

8. The electronic device manufacturing aqueous solution according to any one of claims 1 to 7, wherein the surface tension of an aqueous solution obtained by adding the alcohol (B) to water (S-1 ) at a concentration of 500 ppm is 80% or less of the surface tension of a liquid containing only water (S-1 ): where the surface tension is measured by a capillary rise type surface tension meter.

9. The electronic device manufacturing aqueous solution according to any one of claims 1 to 8, further comprising a resin (D), wherein, optionally, a content of the resin (D) based on the electronic device manufacturing aqueous solution is 0 to 10 mass%.

10. The electronic device manufacturing aqueous solution according to any one of claims 1 to 9, further comprising an additive (E), wherein optionally, the additive (E) comprises at least one selected from the group consisting of other surfactants, acids, a disinfectant, an antibacterial agent, an antiseptic, and an antifungal agent, and optionally, a content of the additive (E) based on the electronic device manufacturing aqueous solution is 0.0001 to 10 mass%.

11. The electronic device manufacturing aqueous solution according to any one of claims 1 to 10, which is a semiconductor manufacturing aqueous solution, whereinoptionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabricating aqueous solution; optionally, the electronic device manufacturing aqueous solution is a semiconductor substrate fabrication process cleaning liquid; optionally, the electronic device manufacturing aqueous solution is a lithography cleaning liquid; or optionally, the electronic device manufacturing aqueous solution is a resist pattern cleaning liquid.

12. A method for producing a resist pattern using the electronic device manufacturing aqueous solution according to any one of claims 1 to 11 .

13. The method for producing a resist pattern according to claim 12, comprising the following steps of:(1) applying a photosensitive resin composition to a substrate, with or without one or more intermediate layers interposed between the photosensitive resin composition and the substrate, to form a photosensitive resin layer,(2) exposing the photosensitive resin layer to radiation,(3) developing the exposed photosensitive resin layer, and(4) cleaning the developed layer with the electronic device manufacturing aqueous solution according to any one of claims 1 to 11 .

14. The method for producing a resist pattern according to claim 13, further comprising a following step of:(3.1) applying a cleaning solution to a resist pattern and cleaning the developed layer.

15. The method for producing a resist pattern according to claim 13 or 14, wherein the photosensitive resin composition is a chemically amplified photosensitive resin composition, and optionally, exposure is performed using extreme ultraviolet light.

16. The method for producing a resist pattern according to any one of claims 12 to 15, wherein a resist pattern having a minimum space size of 5 to 30 nm is produced.

17. A method for manufacturing a device, comprising the method for producing a resist pattern according to any one of claims 12 to 16, wherein optionally, the method for manufacturing a device comprises etching a substrate by using the produced resist pattern as a mask to process the substrate; optionally, the method for manufacturing a device comprises performing ion-doping on a substrate or a bottom layer using the produced resist pattern as a mask; and optionally, the method for manufacturing a device includes forming wiring on the processed substrate.

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