Optical sensor package and manufacturing method therefor

Abstract

An optical sensor package according to one embodiment comprises: a light-emitting unit which is disposed on a package substrate and which emits first light toward a target; a light-receiving unit which is disposed on the package substrate and which receives second light obtained by reflection of the first light from the target; and a molding member which is formed on the package substrate so as to encompass the top surface of an exposed portion of the package substrate, the light-emitting unit and the light-receiving unit, and which includes a recess formed in the thickness direction between the light-emitting unit and the light-receiving unit, wherein the recess is filled with an opaque material.

Description

Optical sensor package and manufacturing method thereof

[0001] The present invention relates to an optical sensor package and a method for manufacturing the same.

[0002] Semiconductor packages come in a variety of types, depending on the technical requirements of each application. Recently, semiconductor packages are increasingly being designed for lightness, compactness, low electrical power consumption, stable and fast signal wiring design, and technologies that prevent the inflow of external contaminants.

[0003] For example, in the field of electronic cigarettes, which electrically heat an aerosol-generating device containing nicotine to produce vapor, an optical sensor may be required to identify whether an aerosol-generating device (e.g., a cigarette) has been inserted into the aerosol-generating device. Such an optical sensor must be mounted on a compact electronic device and, to prevent the ingress of various contaminants that may be generated after smoking, may be manufactured in the form of an optical sensor package.

[0004] Meanwhile, the light sensor detects the proximity of a subject by detecting the light emitted from the light emitter and reflected back to the light receiver. Therefore, the light sensor may experience a problem of reduced sensing sensitivity if a crosstalk phenomenon occurs, where light emitted from the light emitter is directly detected by the light receiver.

[0005] Through the present disclosure, an optical sensor package can be provided that can prevent light emitted from a light emitting portion from being directly incident on a light receiving portion.

[0006] In addition, through the present disclosure, a method for manufacturing an optical sensor package can be provided in which the manufacturing process is minimized in the package manufacturing stage, thereby reducing the process time and manufacturing cost.

[0007] The problems to be solved through the examples are not limited to the problems described above, and problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the examples belong from this specification and the attached drawings.

[0008] An optical sensor package according to one embodiment includes a light emitting portion disposed on a package substrate and emitting a first light toward a target, a light receiving portion disposed on the package substrate and receiving a second light reflected from the first light toward the target, a molding member formed on the package substrate to surround an upper surface of an exposed portion of the package substrate, the light emitting portion, and the light receiving portion, and including a groove formed in a thickness direction between the light emitting portion and the light receiving portion, wherein the groove is filled with an opaque material.

[0009] A method for manufacturing an optical sensor package according to one embodiment includes a step of mounting sensor elements such as a light emitting part and a light receiving part on each of the substrate units, a step of forming a molding member including a groove formed in a thickness direction between the light emitting part and the light receiving part on each of the substrate units, and a step of filling the groove with an opaque material.

[0010] The optical sensor package according to embodiments of the present invention can be expected to improve the sensing sensitivity of the optical sensor package by preventing the crosstalk phenomenon in which light emitted from a light emitting portion is directly incident on a light receiving portion.

[0011] The method for manufacturing an optical sensor package according to embodiments of the present invention can reduce process time and manufacturing costs by minimizing the manufacturing process in the package manufacturing stage.

[0012] The effects of the embodiments are not limited to the effects described above, and effects not mentioned can be clearly understood by a person having ordinary skill in the art to which the embodiments belong from this specification and the attached drawings.

[0013] FIG. 1A is a plan view of an optical sensor package according to one embodiment.

[0014] Fig. 1b is a cross-sectional view of the optical sensor package taken along line I-I' of Fig. 1a.

[0015] FIG. 1c is a drawing for explaining the sensing operation of an optical sensor package according to one embodiment.

[0016] FIG. 2a is a plan view of an optical sensor package according to one embodiment, and FIG. 2b is a cross-sectional view of the optical sensor package taken along line II-II' of FIG. 2a.

[0017] FIG. 3a is a plan view of an optical sensor package according to one embodiment, and FIG. 3b is a cross-sectional view of the optical sensor package taken along line III-III' of FIG. 3a.

[0018] FIG. 4a is a plan view of an optical sensor package according to one embodiment, and FIG. 4b is a cross-sectional view of the optical sensor package taken along line IV-IV' of FIG. 4a.

[0019] FIG. 5a is a plan view of an optical sensor package according to one embodiment, and FIG. 5b is a cross-sectional view of the optical sensor package taken along line V-V' of FIG. 5a.

[0020] FIG. 6a is a plan view of an optical sensor package according to one embodiment, and FIG. 6b is a cross-sectional view of the optical sensor package taken along line VI-VI' of FIG. 6a.

[0021] FIG. 7a is a plan view of an optical sensor package according to one embodiment, and FIG. 7b is a cross-sectional view of the optical sensor package taken along line VII-VII' of FIG. 7a.

[0022] Fig. 8a is a plan view of an optical sensor package according to one embodiment. Fig. 8b is a cross-sectional view of the optical sensor package taken along line VIII-VIII' of Fig. 8a.

[0023] Fig. 9a is an external perspective view showing a strip for an optical sensor package according to one embodiment of the present invention. Fig. 9b is a cross-sectional view of the substrate strip cut along the line X-X' of the substrate strip of Fig. 9a.

[0024] FIGS. 10 to 15 are cross-sectional views showing step-by-step the manufacturing process of the strip for the optical sensor package of FIGS. 9a and 9b.

[0025] Fig. 16 is a flowchart for explaining a method for manufacturing an optical sensor package according to one embodiment of the present invention.

[0026] FIG. 17 is a cross-sectional view of a strip for an optical sensor package according to another embodiment of the present invention.

[0027] Figures 18 to 20 are cross-sectional views illustrating the manufacturing process of the strip for the optical sensor package of Figure 17.

[0028] The terms used in the examples have been selected from widely used, current terms, taking into account the functions of the present invention. However, these terms may vary depending on the intentions of those skilled in the art, precedents, the emergence of new technologies, etc. Furthermore, in certain cases, terms may be arbitrarily selected by the applicant, in which case their meanings will be described in detail in the relevant description of the invention. Therefore, the terms used in the present invention should be defined based on their meaning and the overall content of the present invention, rather than simply their names.

[0029] When a part of the specification is said to "include" a component, this does not exclude other components, but rather implies the inclusion of other components, unless otherwise specifically stated. Furthermore, terms such as "part" and "module" used in the specification mean a unit that processes at least one function or operation, which may be implemented in hardware, software, or a combination of hardware and software.

[0030] Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily implement them. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein.

[0031] Hereinafter, embodiments are described in detail with reference to the drawings.

[0032] FIG. 1A is a plan view of an optical sensor package according to one embodiment, and FIG. 1B is a cross-sectional view of the optical sensor package taken along line I-I' of FIG. 1A. FIG. 1C is a drawing for explaining a sensing operation of the optical sensor package according to one embodiment.

[0033] Referring to FIGS. 1A to 1C, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110), a semiconductor chip (120), a light receiving portion (130), a molding member (ENC), and a partition wall (PTW).

[0034] In one embodiment, a package substrate (SUB) may have a first element (PE1) and a second element (PE2) formed on a first surface (S1) (e.g., a surface in the +Z direction), and a substrate terminal (TE) formed on a second surface (S2) opposite to the first surface (S1) (e.g., a surface in the -Z direction).

[0035] In one embodiment, the first side (S1) may be a side facing the detection target (OBJ) of the optical sensor package (100). The substrate terminal (TE) may be electrically and / or physically connected to an electronic device (e.g., an aerosol generating device, a mobile phone, a laptop, etc.) on which the optical sensor package (100) of the present invention is mounted.

[0036] In one embodiment, the light emitting unit (110) is disposed on the package substrate (SUB) and can emit a first light toward the detection target (OBJ). The light emitting unit (110) can be formed of at least one light emitting diode that emits the first light when current flows. For example, the light emitting unit (110) illustrated in FIGS. 1A to 1C can be any one of a visible light emitting diode, an infrared light emitting diode, and an ultraviolet light emitting diode.

[0037] In one embodiment, the light receiving unit (130) may be placed directly on the package substrate (SUB). In FIGS. 1A to 1C, the light receiving unit (130) is illustrated as being placed on the semiconductor chip (120). However, depending on design requirements, the semiconductor chip (120) may be mounted on a separate printed circuit board or the like rather than the light sensor package (100) and electrically connected to the light receiving unit (130).

[0038] In addition, the light receiving unit (130) can receive the second light reflected by the first light on the detection target (OBJ). In FIGS. 1A to 1C, an embodiment in which an identification material (DM) is included on one side of the detection target (OBJ) is illustrated, but depending on design requirements, the identification material (DM) may not be included on one side of the detection target (OBJ). In this case, the wavelength band of the second light may be substantially the same as the wavelength band of the first light.

[0039] In one embodiment, a molding member (ENC) may be disposed on a first surface (S1) of a package substrate (SUB). The molding member (ENC) may protect the first surface (S1) of the package substrate (SUB) and other components mounted on the first surface (S1), such as a light-emitting unit (110), a semiconductor chip (120), and a light-receiving unit (130). The molding member (ENC) may be made of a non-conductive material. The molding member (ENC) may reduce or prevent electrical short-circuiting or unnecessary short-circuiting of the first surface (S1) of the package substrate (SUB) and other components mounted on the first surface (S1).

[0040] In one embodiment, the molding member (ENC) may be formed to surround the light emitting portion (110), the semiconductor chip (120), and the light receiving portion (130) on the first surface (S1) of the package substrate (SUB).

[0041] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting portion (110) to be transmitted to the detection target of the optical sensor package (100).

[0042] In one embodiment, the molding member (ENC) may be formed into a single body by connecting the regions surrounding the light emitting portion (110), the semiconductor chip (120), and the light receiving portion (130), respectively. The molding member (ENC) may be applied substantially uniformly on the first surface (S1) of the package substrate (SUB) and cured. The molding member (ENC) formed into a single body may improve the efficiency of manufacturing the optical sensor package (100).

[0043] In one embodiment, the molding member (ENC) may include a partition wall (PTW) between the light emitting portion (110) and the light receiving portion (130) (or, semiconductor chip (120)). The partition wall (PTW) may be positioned between the light emitting portion (110) and the light receiving portion (130) to prevent light output from the light emitting portion (110) from being directly incident on the light receiving portion (130).

[0044] According to the manufacturing method of the optical sensor package (100) of the present invention described later, the partition wall (PTW) can be formed through a dispensing molding technique.

[0045] Specifically, the molding member (ENC) formed through the transfer molding technique may include a groove (HM) formed in the thickness direction between the light-emitting portion (110) and the light-receiving portion (130) (or, semiconductor chip (120)). For example, the groove (HM) may have a rectangular parallelepiped shape.

[0046] The groove (HM) of the molding member (ENC) may be filled with an opaque material. The opaque material may preferably be formed of a material having low light transmittance for light emitted from the light emitting portion (110) in order to reduce the incidence of light emitted from the light emitting portion (110) on the light receiving portion (130). For example, the opaque material may be a black epoxy molding compound (EMC). In this case, the opaque material may be considered a low-reflectivity material in that it absorbs most of the light emitted from the light emitting portion (110).

[0047] Meanwhile, the bulkhead (PTW) is a result of a liquid opaque material being hardened within the groove (HM). In the following paragraphs, the terms bulkhead (PTW) and opaque material may be used interchangeably.

[0048] In one embodiment, the lower surface of the barrier wall (PTW) (or, opaque material) may be in contact with the package substrate (SUB), and the upper surface of the barrier wall (PTW) (or, opaque material) may be exposed to the outside.

[0049] In one embodiment, the upper surface of the partition wall (PTW) (or opaque material) is positioned on the same plane as the upper surface of the molding member (ENC), and side surfaces connecting the upper and lower surfaces of the partition wall (PTW) (or opaque material) can be in contact with the molding member (ENC). In other words, the groove (HM) can be a well structure with the side surfaces being the interfaces where the partition wall (PTW) (or opaque material) and the molding member (ENC) are in contact, and the bottom surface being the package substrate (SUB).

[0050] In this way, the optical sensor package (100) includes a partition wall (PTW) between the light emitting portion (110) and the light receiving portion (130), thereby preventing a crosstalk phenomenon in which light emitted from the light emitting portion (110) is directly incident on the light receiving portion (130), thereby improving the sensing sensitivity of the optical sensor package (100).

[0051] Meanwhile, according to another embodiment, an identification material (DM) may be included on one surface of the detection object (OBJ). The identification material (DM) may be excited when light of a predetermined wavelength range is absorbed. In this case, 'the material being excited' may mean that the state of the material changes from a ground state to an excited state. Thereafter, in the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range may be emitted from the luminescent material.

[0052] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range. In this case, the first light emitted from the light emitting unit (110) can be light of the first wavelength, and the second light received by the light receiving unit (130) can be light of the second wavelength. That is, the wavelength band of the second light can be different from the wavelength band of the first light.

[0053] The identifying material (DM) may be a material belonging to the lanthanide series and may include a material composed of at least one element having atomic numbers 57 to 71.

[0054] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0055] In one embodiment, the light emitting unit (110) may be comprised of at least one light emitting diode that emits light (L) of a first wavelength when current flows through it. For example, both light emitting units (110) illustrated in FIGS. 1A to 1C may be ultraviolet light emitting diodes.

[0056] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0057] In one embodiment, the light receiving unit (130) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130) illustrated in FIGS. 1A to 1C may be an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) for detecting red light, a second photodiode (132) for detecting green light, and a third photodiode (133) for detecting blue light. The RGB detection sensor may detect the color of the light (L') of the second wavelength based on a ratio of the amount of light received by each of the first photodiode (131), the second photodiode (132), and the third photodiode (133).

[0058] In one embodiment, the optical sensor package (100) may include a first element (PE1), a second element (PE2), and a first conductive member (W1).

[0059] In one embodiment, a first element (PE1) and a second element (PE2) may be formed on a first surface (S1). The first element (PE1) may be connected to a light-emitting unit (110) formed of a light-emitting diode, and the second element (PE2) may be connected to a semiconductor chip (120).

[0060] In one embodiment, the first conductive member (W1) can electrically connect the first element (PE1) and the light-emitting unit (110). For example, the first element (PE1) can be composed of two terminals including a negative terminal and a positive terminal. The light-emitting unit (110) can be directly coupled to either of the two terminals. The first conductive member (W1) can connect the light-emitting unit (110) to the other of the two terminals.

[0061] In addition, the solder ball (SD) can electrically connect the second element (PE2) and the semiconductor chip (120). For example, the second element (PE2) can be configured with a plurality of terminals corresponding to pad electrodes formed on the back surface of the semiconductor chip (120). The semiconductor chip (120) can be connected to the second element (PE1) by placing the solder ball (SD) between the pad electrodes of the semiconductor chip (120) and the plurality of electrodes of the second element (PE2) and performing a reflow process.

[0062] In one embodiment, the first element (PE1) and the second element (PE2) may be arranged adjacent to each other on the first surface (S1). Accordingly, the light emitting unit (110) and the semiconductor chip (120) may be arranged adjacent to each other on the first surface (S1) of the package substrate (SUB).

[0063] In one embodiment, the light receiving unit (130) may be placed on the semiconductor chip (120). For example, the light receiving unit (130) may be manufactured integrally during the production of the semiconductor chip (120). In FIG. 1A, an embodiment is illustrated in which the light receiving unit (130) is placed on the upper left side of the semiconductor chip (120) and the area of ​​the light receiving unit (130) occupies approximately 1 / 4 of the semiconductor chip (120), but this is merely exemplary and is not limited thereto. That is, the size and arrangement position of the light receiving unit (130) may be variously modified at the request of the customer.

[0064] According to one embodiment, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light-emitting portion (110). For example, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be about 610 μm, and the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light-emitting portion (110) may be about 150 μm.

[0065] In this way, when the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) is higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting unit (110), the light receiving unit (130) is disposed on the semiconductor chip (120), so that the light (L) emitted from the light emitting unit (110) can be prevented from being directly incident on the light receiving unit (130) without passing through the detection target (OBJ). That is, the semiconductor chip (120) can further complement the partition function in that it shields the light emitted from the light emitting unit (110).

[0066] FIG. 2a is a plan view of an optical sensor package according to one embodiment, and FIG. 2b is a cross-sectional view of the optical sensor package taken along line II-II' of FIG. 2a.

[0067] The optical sensor package (100) illustrated in FIGS. 2A and 2B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C, which includes only an ultraviolet light emitting diode and an RGB detection sensor, in that it further includes an infrared light emitting diode and an infrared photodetector, but the remaining configurations are substantially the same. Hereinafter, configurations with differences will be described, and redundant descriptions of identical configurations will be omitted.

[0068] Referring to FIGS. 2a and 2b, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110, 110_1), a semiconductor chip (120), a light receiving portion (130_1), a molding member (ENC), and a partition wall (PTW).

[0069] One side of the detection target (see OBJ in Fig. 1c) may include an identification material (DM).

[0070] The identification material (DM) can be excited by absorbing light of a predetermined wavelength range, and in this case, 'the material being excited' can mean that the state of the material changes from a ground state to an excited state. Thereafter, during the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range can be emitted from the luminescent material.

[0071] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0072] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0073] For another example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130_1) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0074] As another example, the identification material (DM) may be a third light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 930 nm to about 990 nm. Accordingly, the light-emitting unit (110) may irradiate infrared light of about 980 nm to the third light-emitting material, and the light-receiving unit (130) may sense infrared light of about 1012 nm emitted from the third light-emitting material.

[0075] The embodiment illustrated in FIGS. 2a and 2b may include a light emitting unit (110) composed of an ultraviolet light emitting diode and a light emitting unit (110_1) composed of an infrared light emitting diode.

[0076] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0077] In one embodiment, the light receiving unit (130_1) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130_1) illustrated in FIGS. 2A and 2B may be an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) that detects red light, a second photodiode (132) that detects green light, and a third photodiode (133) that detects blue light. In addition, the light receiving unit (130_1) may further include an infrared light receiving diode (134) that can receive an infrared wavelength (i.e., about 1000 nm to about 1020 nm).

[0078] Accordingly, light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the RGB detection sensor (131, 132, 133) of the light receiving unit (130_1) when the identification material included in the detection target is the first light emitting material, and can be detected by the infrared light receiving diode (134) of the light receiving unit (130_1) when the identification material is the second light emitting material.

[0079] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode (134) of the light receiving unit (130_1) when the identification material included in the detection target is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be detected as infrared light of the first wavelength by the infrared light receiving diode (134) of the light receiving unit (130_1).

[0080] In one embodiment, the optical sensor package (100) may include a first conductive member (W1_1). In one embodiment, the first conductive member (W1_1) may electrically connect the first element (PE1_1) and the light emitting portion (110_1).

[0081] In one embodiment, the light receiving portion (130_1) may be placed on the semiconductor chip (120). In addition, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting portion (110).

[0082] As described above with reference to FIGS. 1A to 1C, the optical sensor package (100) illustrated in FIGS. 2A and 2B also includes a barrier wall (PTW), and the semiconductor chip (120) further complements the barrier wall function, thereby preventing the crosstalk phenomenon and improving the sensing sensitivity of the optical sensor package (100).

[0083] FIG. 3a is a plan view of an optical sensor package according to one embodiment, and FIG. 3b is a cross-sectional view of the optical sensor package taken along line III-III' of FIG. 3a.

[0084] The optical sensor package (100) illustrated in FIGS. 3A and 3B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C in that it includes an infrared photodiode instead of the RGB detection sensor, with the remaining components being substantially the same. Hereinafter, the components with differences will be primarily described, and redundant descriptions of the same components will be omitted.

[0085] Referring to FIGS. 3a and 3b, an optical sensor package (100) according to one embodiment may include a package substrate (SUB), a light emitting portion (110), a semiconductor chip (120), a light receiving portion (130_2), a molding member (ENC), and a partition wall (PTW).

[0086] One side of the detection target (see OBJ in Fig. 1c) may include an identification material (DM).

[0087] The identification material (DM) can be excited by absorbing light of a predetermined wavelength range, and in this case, 'the material being excited' can mean that the state of the material changes from a ground state to an excited state. Thereafter, during the process of the state of the identification material (DM) changing from an excited state to a ground state, light of a predetermined wavelength range can be emitted from the luminescent material.

[0088] In one embodiment, the identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated from the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0089] For example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm when excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130_2) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0090] Both light emitting units (110) illustrated in FIGS. 3a and 3b may be ultraviolet light emitting diodes.

[0091] In one embodiment, the semiconductor chip (120) may be formed of an application specific integrated circuit (ASIC) that controls the overall operation of the optical sensor package (100).

[0092] In one embodiment, the light receiving unit (130_2) may be formed of at least one light receiving diode that allows current to flow when receiving light (L') of a second wavelength that is different from light (L) of a first wavelength. For example, the light receiving unit (130_2) illustrated in FIGS. 2A and 2B may be formed of an infrared light receiving diode capable of receiving infrared wavelengths (i.e., about 1000 nm to about 1020 nm).

[0093] Accordingly, the light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the infrared light receiving diode of the light receiving unit (130_2) when the identification material included in the detection target is the second light emitting material.

[0094] In one embodiment, the light receiving unit (130_2) may be placed on the semiconductor chip (120). In addition, the height (H1) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the semiconductor chip (120) may be higher than the height (H2) from the first surface (S1) (or upper surface) of the package substrate (SUB) to the upper surface of the light emitting unit (110).

[0095] As described above through FIGS. 1A to 1C, the optical sensor package (100) illustrated in FIGS. 3A and 3B also includes a partition wall (PTW), and since the semiconductor chip (120) further complements the partition wall function, the crosstalk phenomenon is prevented, and thus the sensing sensitivity of the optical sensor package (100) can be expected to be improved.

[0096] FIG. 4a is a plan view of an optical sensor package according to one embodiment, and FIG. 4b is a cross-sectional view of the optical sensor package taken along line IV-IV' of FIG. 4a.

[0097] The optical sensor package (100) illustrated in FIGS. 4A and 4B differs from the optical sensor package (100) illustrated in FIGS. 1A to 1C in that it further includes an additional light receiving unit (135), and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be primarily described, and redundant descriptions of identical configurations will be omitted.

[0098] Referring to FIGS. 4A and 4B, in one embodiment, the light sensor package (100) may further include an additional light receiving portion (135), a third element (PE3), and a second conductive member (W2).

[0099] In one embodiment, the third element (PE2) may be formed on the first surface (S1) of the package substrate (SUB). The third element (PE3) may be connected to an additional light-receiving unit (135) formed of an infrared light-receiving diode.

[0100] For example, the third element (PE3) may be composed of two terminals including a negative terminal and a positive terminal. The additional light-receiving portion (135) may be directly coupled to either of the two terminals. The second conductive member (W2) may connect the additional light-receiving portion (135) to the other of the two terminals.

[0101] In one embodiment, the third element (PE3) may be disposed on the first surface (S1) opposite the first element (PE1) with respect to the second element (PE2), and may be disposed on the first surface (S1) adjacent to the second element (PE2). In addition, the additional light-receiving unit (135) may be disposed on the first surface (S1) opposite the light-emitting unit (110) with respect to the semiconductor chip (120), and may be disposed on the first surface (S1) adjacent to the semiconductor chip (120).

[0102] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110), the semiconductor chip (120) can have a barrier function.

[0103] One side of the detection target (see OBJ in Fig. 1c) may include an identification material (DM).

[0104] The identification material (DM) can be excited by light irradiated by the light emitting unit (110) and can emit light of a wavelength range different from the wavelength range of the irradiated light. For example, the identification material (DM) can be excited by light of a first wavelength range irradiated by the light emitting unit (110) and can emit light of a second wavelength range different from the first wavelength range.

[0105] For example, the identification material (DM) may be a first light-emitting material that emits light in a second wavelength range of about 400 nm to about 750 nm when excited by light in a first wavelength range of about 350 nm to about 390 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 365 nm to the first light-emitting material, and the light-receiving unit (130) may sense visible light of 700 nm (i.e., red light) emitted from the first light-emitting material.

[0106] For another example, the identification material (DM) may be a second light-emitting material that emits light in a second wavelength range of about 1000 nm to about 1020 nm upon being excited by light in a first wavelength range of about 300 nm to about 340 nm. Accordingly, the light-emitting unit (110) may irradiate ultraviolet light of about 325 nm to the second light-emitting material, and the light-receiving unit (130) may sense infrared light of 1012 nm emitted from the second light-emitting material.

[0107] Accordingly, light emitted from the light emitting unit (110) composed of an ultraviolet light emitting diode can be detected by the RGB detection sensor (131, 132, 133) of the light receiving unit (130) when the identification material included in the detection target is the first light emitting material, and can be detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material is the second light emitting material.

[0108] FIG. 5a is a plan view of an optical sensor package according to one embodiment, and FIG. 5b is a cross-sectional view of the optical sensor package taken along line V-V' of FIG. 5a.

[0109] The optical sensor package (100) illustrated in FIGS. 5A and 5B includes a light emitting portion (110) composed of an ultraviolet light emitting diode and a light emitting portion (110_1) composed of an infrared light emitting diode, and is different from the optical sensor package (100) illustrated in FIGS. 4A and 4B, which includes only a light emitting portion (110) composed of an ultraviolet light emitting diode, in that the package includes a light emitting portion (110_1) composed of an ultraviolet light emitting diode, and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be described, and redundant descriptions of identical configurations will be omitted.

[0110] The light sensor package (100) can detect light emitted from a light emitting unit (110) composed of an ultraviolet light emitting diode by an RGB detection sensor (131, 132, 133) of a light receiving unit (130) when the identification material included in the detection target is a first light emitting material, and can detect light by an infrared light receiving diode of an additional light receiving unit (135) when the identification material is a second light emitting material.

[0111] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material included in the detection target is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be detected as infrared light of the first wavelength by the infrared light receiving diode of the additional light receiving unit (135).

[0112] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110, 110_1), the semiconductor chip (120) can further complement the barrier function.

[0113] FIG. 6a is a plan view of an optical sensor package according to one embodiment, and FIG. 6b is a cross-sectional view of the optical sensor package taken along line VI-VI' of FIG. 6a.

[0114] The optical sensor package (100) illustrated in FIGS. 6A and 6B is different from the optical sensor package (100) illustrated in FIGS. 5A and 5B in that it does not include an RGB detection sensor and only includes an additional light-receiving unit (135) composed of an infrared light-receiving diode, and includes a light-emitting unit (110) that includes both an RGB detection sensor and an additional light-receiving unit (135) composed of an infrared light-receiving diode, but the remaining configurations are substantially the same. Hereinafter, configurations that have differences will be described, and redundant descriptions of identical configurations will be omitted.

[0115] The light sensor package (100) illustrated in FIGS. 6A and 6B can detect light emitted from a light emitting portion (110) composed of an ultraviolet light emitting diode by an infrared light receiving diode of an additional light receiving portion (135) when the identification material included in the detection target is a second light emitting material.

[0116] In addition, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be excited into infrared light of the second wavelength and detected by the infrared light receiving diode of the additional light receiving unit (135) when the identification material included in the detection target is a third light emitting material. Meanwhile, the infrared light of the first wavelength emitted from the light emitting unit (110_1) composed of an infrared light emitting diode can be detected as infrared light of the first wavelength by the infrared light receiving diode of the additional light receiving unit (135).

[0117] Since a semiconductor chip (120) is placed between the additional light receiving unit (135) and the light emitting unit (110, 110_1), the semiconductor chip (120) can further complement the barrier function.

[0118] FIG. 7a is a plan view of an optical sensor package according to one embodiment, and FIG. 7b is a cross-sectional view of the optical sensor package taken along line VII-VII' of FIG. 7a.

[0119] The optical sensor package (100) illustrated in FIGS. 7A and 7B is different from the optical sensor package (100) illustrated in FIGS. 1A to 1C, which includes a light receiving unit (130) composed of an RGB detection sensor arranged on a semiconductor chip (120), in that it does not include a semiconductor chip (120) and includes a light receiving unit (130) composed of an RGB detection sensor, but the remaining configurations are substantially the same. Hereinafter, configurations with differences will be mainly described, and redundant descriptions of identical configurations will be omitted.

[0120] Referring to FIGS. 7a and 7b, in one embodiment, the light sensor package (100) may include a light receiving portion (130) configured as an RGB detection sensor, a fourth element (PE4), and a third conductive member (W3).

[0121] In one embodiment, the fourth element (PE4) may be formed on the first surface (S1) of the package substrate (SUB). The fourth element (PE4) may be connected to a light receiving unit (130) formed of an RGB detection sensor. The RGB detection sensor may include a first photodiode (131) for detecting red light, a second photodiode (132) for detecting green light, and a third photodiode (133) for detecting blue light.

[0122] For example, the fourth element (PE4) may be composed of two terminals including a cathode terminal and an anode terminal. The first photodiode (131) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the first photodiode (131) to the other of the two terminals. The second photodiode (132) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the second photodiode (132) to the other of the two terminals. Similarly, the third photodiode (133) may be directly coupled to either of the two terminals. The third conductive member (W3) may connect the third photodiode (133) to the other of the two terminals.

[0123] As described above with reference to FIGS. 1A to 1C, the optical sensor package (100) illustrated in FIGS. 7A and 7B also includes a partition wall (PTW), thereby preventing crosstalk, and thus improving the sensing sensitivity of the optical sensor package (100) can be expected. In addition, since the third diode (133) illustrated in FIGS. 7A and 7B can sense only visible light, the probability of crosstalk occurring due to light emitted from the light emitting unit (110) composed of an ultraviolet light emitting element may not be large.

[0124] Meanwhile, although this partition wall (PTW) is shown as being located only between the light receiving unit (130) and the light emitting unit (110) in FIGS. 1A to 7B, in an optical sensor package (100) according to another embodiment, the partition wall (PTW) may be additionally formed along the perimeter of the package substrate (SUB) in addition to between the light receiving unit (130) and the light emitting unit (110), as shown in FIGS. 8A and 8B.

[0125] The optical sensor package (100) may include a molding member (ENC) disposed on the upper surface of the exposed package substrate (SUB) portion, a light emitting portion (110), a semiconductor chip (120), and a light receiving portion (130).

[0126] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting portion (110) to be transmitted to the detection target of the optical sensor package (100).

[0127] Fig. 8a is a plan view of an optical sensor package according to one embodiment. Fig. 8b is a cross-sectional view of the optical sensor package taken along line VIII-VIII' of Fig. 8a.

[0128] The optical sensor package (100) illustrated in FIGS. 8A and 8B differs from the optical sensor package (100) of FIGS. 1A to 1C in that the partition wall (PTW) is arranged only between the light emitting portion (110) and the light receiving portion (130) (or the semiconductor chip (120)) in that it includes a second partition wall portion extending along the edge of the package substrate in the first plane direction (e.g., the plane in the +Z direction), and the remaining configurations are substantially the same. Hereinafter, configurations having differences will be described, and redundant descriptions of identical configurations will be omitted.

[0129] Referring to FIGS. 8A and 8B, the molding member (ENC) may include a first partition wall portion (PTW1) disposed between the light-emitting portion (110) and the light-receiving portion (130) (or, the semiconductor chip (120)) and a second partition wall portion (PTW2) extending in the direction of the first surface (S1) (e.g., the surface in the +Z direction) along the edge of the package substrate (SUB).

[0130] According to the manufacturing method of the optical sensor package (100) of the present invention described later, the partition wall (PTW) can be formed through a dispensing molding technique.

[0131] Specifically, the molding member (ENC) formed through the transfer molding technique may include a groove (HM) formed in the thickness direction between the light-emitting portion (110) and the light-receiving portion (130) (or, semiconductor chip (120)) and along the edge of the package substrate (SUB). For example, the groove (HM) may have a shape of the number '8' in a cross-sectional view.

[0132] The groove (HM) of the molding member (ENC) may be filled with an opaque material. The opaque material may preferably be formed of a material having low light transmittance for light emitted from the light emitting unit (110) to reduce the incidence of light emitted from the light emitting unit (110) on the light receiving unit (130). For example, the opaque material may be a black epoxy molding compound (EMC).

[0133] In one embodiment, the lower surface of the barrier wall (PTW) (or, opaque material) may be in contact with the package substrate (SUB), and the upper surface of the barrier wall (PTW) (or, opaque material) may be exposed to the outside.

[0134] In one embodiment, the upper surface of the partition wall (PTW) (or opaque material) is positioned on the same plane as the upper surface of the molding member (ENC), and side surfaces connecting the upper and lower surfaces of the partition wall (PTW) (or opaque material) can be in contact with the molding member (ENC). In other words, the groove (HM) may be a trench structure with the side surfaces being the interfaces where the partition wall (PTW) (or opaque material) and the molding member (ENC) are in contact, and the bottom surface being the package substrate (SUB).

[0135] In this way, the optical sensor package (100) includes a partition wall (PTW) that isolates each of the light emitting unit (110) and the light receiving unit (130), thereby further preventing the crosstalk phenomenon in which light emitted from the light emitting unit (110) is directly incident on the light receiving unit (130), thereby improving the sensing sensitivity of the optical sensor package (100).

[0136] The optical sensor package (100) may include a molding member (ENC) including a first molding member (ENC1) disposed on the upper surface of a portion of an exposed package substrate (SUB) and a light-emitting portion (110), a second molding member (ENC2) disposed on the upper surface of another portion of the exposed package substrate (SUB) and a light-receiving portion (130) and a semiconductor chip (120), and a third molding member (ENC3) surrounding an outer circumferential surface of a partition wall (PTW).

[0137] In one embodiment, the molding member (ENC) may be formed of a light-transmitting material. For example, the molding member (ENC) may be a transparent molding compound (CMC). The molding member (ENC) may guide light emitted from the light-emitting portion (110) to be transmitted to the detection target of the optical sensor package (100).

[0138] Fig. 9a is an external perspective view showing a strip for an optical sensor package according to one embodiment of the present invention. Fig. 9b is a cross-sectional view of the substrate strip cut along the line X-X' of the substrate strip of Fig. 9a.

[0139] First, as illustrated in FIGS. 9a and 9b, a substrate strip (1000) for an optical sensor package according to one embodiment of the present invention may include substrate units (SA) that become substrates of individual optical sensor packages after singulation (or cutting process) and a dummy area (DA) excluding the substrate units.

[0140] For example, the substrate strip (1000) may be a printed circuit board (PCB) array, or a thin panel-shaped structure formed in a lengthwise direction so that a wiring layer (WL) corresponding to the first element (PE1), the second element (PE2), the third element (PE3), and the fourth element (PE4) described above in FIGS. 1A to 8B is formed, and a plurality of light sensor elements (e.g., a light emitting unit (110), a semiconductor chip (120), etc.) can be integrated and mounted.

[0141] Such a substrate strip (1000) may be a support having sufficient strength and durability to support a plurality of optical sensor elements (e.g., light emitting portions (110), semiconductor chips (120), etc.), bonding wires (BW) corresponding to the first conductive member (W1), the second conductive member (W2), and the third conductive member (W3) described above in FIGS. 1A to 8B, a partition wall (PTW) for individual elements, and a molding member (ENC) for individual elements.

[0142] A plurality of optical sensor packages (100) can be arranged in a matrix in an n × m matrix in the length direction and width direction at regular intervals on the substrate strip (1000).

[0143] The bonding wire (BW) electrically connects the light sensor elements (e.g., the light emitting portion (110)) and the wiring layer (WL), and can be a type of signal transmission medium that can transmit an electrical signal between the light sensor elements (e.g., the light emitting portion (110)) and the wiring layer (WL) to the outside.

[0144] The barrier wall (PTW) is a structure for preventing light emitted from the light emitting portion (110) from being directly incident on the light receiving portion (see 130 in FIG. 1A) disposed on the semiconductor chip (120), and may be dispensed molded on the substrate strip (1000). The barrier wall (PTW) may be disposed between the light emitting portion (110) and the light receiving portion (or, the semiconductor chip (120)).

[0145] It is preferable that the partition wall (PTW) be formed of a material having low light transmittance to light emitted from the light emitting portion (110). For example, the partition wall (PTW) can be formed using a black epoxy molding compound (EMC).

[0146] Additionally, the molding member (ENC) for individual elements can be transfer molded onto the substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120), etc.) and bonding wires (BW).

[0147] The molding member (ENC) may be applied with a light-transmitting encapsulant such as a transparent molding compound that can transmit external light to the light sensor package (100) or transmit light from the light sensor package (100) to the outside at all times. However, the present invention is not limited thereto, and a reflective encapsulant such as a white epoxy molding compound (WEMC) may also be applied.

[0148] FIGS. 10 to 15 are cross-sectional views showing step-by-step the manufacturing process of the strip for the optical sensor package of FIGS. 9a and 9b.

[0149] Referring to FIGS. 10 to 15, a manufacturing process of an optical sensor package (100) according to one embodiment of the present invention is described step by step.

[0150] First, as illustrated in FIG. 10, a substrate strip (1000) may be prepared, and a wiring layer (WL) may be formed on the substrate strip (1000). At this time, the wiring layer (WL) may correspond to a first element (PE1), a second element (PE2), a third element (PE3), and a fourth element (PE4). Next, as illustrated in FIG. 11, optical sensor elements may be mounted on each substrate unit (SA) of the substrate strip (1000). For example, a light emitting unit (110) may be connected to the first element (PE1), and a semiconductor chip (120) may be connected to the second element (PE2).

[0151] At this time, in order to help explain the manufacturing process, FIG. 11 schematically illustrates some of the sensor elements arranged on the substrate unit (SA) in a greatly enlarged or greatly simplified manner, and the shape and type thereof are not necessarily limited to the drawing and can be modified and modified in various forms.

[0152] Next, as illustrated in FIG. 12, the light sensor elements (e.g., light emitting unit (110)) and the wiring layer (e.g., first element (PE1)) can be electrically connected with a bonding wire (BW).

[0153] Next, as illustrated in FIG. 13, individual element molding members (ENC) can be transferred molded on a substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120)) and the bonding wire (BW).

[0154] As illustrated in FIG. 13, transfer molding can be performed by turning over the substrate strip (1000) and mounting and fixing the first cavities (CV1) and the substrate units (SA) provided in the first mold (M1) so that they face each other, and then providing a transparent molding compound to the first cavity (CV1) to reverse mold an individual element molding member (ENC).

[0155] At this time, the first mold (M1) may include a protrusion (PT) at a position corresponding to the groove (HM). The shape of the protrusion (PT) may correspond to the shape of the groove (HM). For example, when the shape of the protrusion (PT) has a rectangular parallelepiped shape, the groove (HM) formed when the substrate strip (1000) and the first mold (M1) are separated may be a well structure having a rectangular parallelepiped shape. That is, the groove (HM) may be a cavity having a package substrate (SUB) exposed in a rectangular shape as a bottom surface and an area of ​​the molding member (ENC) exposed in the thickness direction along the bottom surface as a side surface.

[0156] Next, as illustrated in Fig. 14, a septum (PTW) for individual components can be formed by dispensing molding. Dispensing molding can be performed by applying a liquid black epoxy molding compound (EMC) to the inside of a groove (HM) using a discharge needle (ND).

[0157] Afterwards, a polishing process is performed to smoothly process the upper surface of the bulkhead (PTW) and the upper surface of the molding member (ENC), so that the upper surfaces of the bulkhead (PTW) and the molding member (ENC) can be arranged on the same plane.

[0158] Next, as illustrated in FIG. 15, the array can be singulated by cutting it along a cut line (CUT) into individual optical sensor packages.

[0159] In this way, according to the optical sensor manufacturing method according to one embodiment of the present invention, the manufacturing process can be minimized in the optical sensor package manufacturing stage, thereby reducing the process time and manufacturing cost.

[0160] Fig. 16 is a flowchart for explaining a method for manufacturing an optical sensor package according to one embodiment of the present invention.

[0161] Referring to FIGS. 9A to 15, a method for manufacturing an optical sensor package according to one embodiment may include a step (S100) of mounting sensor elements such as a light emitting unit (110) and a light receiving unit (130) on each of substrate units (SA), a step (S200) of forming a molding member (ENC) using a sealant on each of substrate units (SA), a step (S300) of forming a partition wall (PTW) through dispensing molding, and a singulation step (S400) of cutting a substrate strip (1000) into substrate unit (SA) units.

[0162] The step of mounting sensor elements (S100) may further include a step of mounting a semiconductor chip (120) on substrate units (SA). At this time, the light receiving unit (130) may be placed on at least one of the semiconductor chip (120) and the substrate unit (SA) opposite the light emitting unit (110) with respect to the semiconductor chip (120).

[0163] The height from the upper surface of the substrate strip (1000) to the upper surface of the semiconductor chip (120) may be higher than the height from the upper surface of the substrate strip (1000) to the upper surface of the light emitting portion (110).

[0164] The step (S200) of forming a molding part may be transfer molding using a transparent molding compound as a sealing agent. At this time, the transfer molding may be reverse molding in which the substrate strip is turned over, the first cavities (CV1) provided in the first mold (M1) and the substrate units (SA) are respectively mounted and fixed so that they face each other, and the transparent molding compound is provided to the first cavity (CV1).

[0165] At this time, the first mold (M1) may include a protrusion (PT) at a position corresponding to the groove (HM). The shape of the protrusion (PT) may correspond to the shape of the groove (HM). For example, when the shape of the protrusion (PT) has a rectangular parallelepiped shape, the groove (HM) formed when the substrate strip (1000) and the first mold (M1) are separated may be a well structure having a rectangular parallelepiped shape. That is, the groove (HM) may be a cavity having a package substrate (SUB) exposed in a rectangular shape as a bottom surface and an area of ​​the molding member (ENC) exposed in the thickness direction along the bottom surface as a side surface.

[0166] The step (S300) of forming a partition wall (PTW) can be performed by dispensing molding using a black epoxy molding compound (EMC) as a sealant. Dispensing molding can be performed by applying a liquid black epoxy molding compound (EMC) to the inside of a groove (HM) using a discharge needle (ND).

[0167] After this, a polishing step may be further included to smoothly process the upper surface of the bulkhead (PTW) and the upper surface of the molding member (ENC).

[0168] The singulation step (S400) can cut the substrate strip (1000) into substrate units (SA).

[0169] FIG. 17 is a cross-sectional view of a strip for an optical sensor package according to another embodiment of the present invention.

[0170] The embodiment illustrated in Fig. 17 differs from the embodiment illustrated in Fig. 9b in that the shape of the bulkhead (PTW) and the shapes of the molding members (ENC1, ENC2, ENC3) are different, and the remaining configurations are substantially the same. The following description focuses on the differences, and redundant descriptions of the same configurations are omitted.

[0171] The molding member (ENC) may include a groove (HM) formed in the thickness direction between the light emitting unit (110) and the light receiving unit (130) (or, semiconductor chip (120)) and along the edge of the package substrate (SUB). For example, the groove (HM) may have a shape of the number '8' in a cross-sectional view. Accordingly, the molding member (ENC) may include a first molding member (ENC1) which is an area including the light emitting unit (110) surrounded by the partition wall (PTW), a second molding member (ENC2) which is an area including the light receiving unit (or, semiconductor chip (210)) surrounded by the partition wall (PTW), and a third molding member (ENC3) which is an edge area formed along the outer circumferential surface of the partition wall (PTW).

[0172] The groove (HM) of the molding member (ENC) may be filled with an opaque material. The opaque material may preferably be formed of a material having low light transmittance for light emitted from the light emitting unit (110) to reduce the incidence of light emitted from the light emitting unit (110) on the light receiving unit (130). For example, the opaque material may be a black epoxy molding compound (EMC).

[0173] In one embodiment, the lower surface of the barrier wall (PTW) (or, opaque material) may be in contact with the package substrate (SUB), and the upper surface of the barrier wall (PTW) (or, opaque material) may be exposed to the outside.

[0174] In one embodiment, the upper surface of the partition wall (PTW) (or opaque material) is positioned on the same plane as the upper surface of the molding member (ENC), and side surfaces connecting the upper and lower surfaces of the partition wall (PTW) (or opaque material) can be in contact with the molding member (ENC). In other words, the groove (HM) may be a trench structure with the side surfaces being the interfaces where the partition wall (PTW) (or opaque material) and the molding member (ENC) are in contact, and the bottom surface being the package substrate (SUB).

[0175] Figures 18 to 20 are cross-sectional views illustrating a manufacturing process of a strip for an optical sensor package of Figure 17. The embodiment illustrated in Figure 17 differs from the embodiment illustrated in Figure 9b only in the shape of the partition wall (PTW) and the shapes of the molding members (ENC1, ENC2, ENC3), and therefore, a description of Figures 10 to 12, which describe substantially the same process, is omitted.

[0176] As illustrated in Fig. 18, individual element molding members (ENC) can be individually molded on a substrate strip (1000) in a shape that individually surrounds the light sensor elements (e.g., light emitting unit (110), semiconductor chip (120)) and bonding wires (BW).

[0177] As illustrated in FIG. 18, transfer molding can be performed by turning over the substrate strip (1000) and mounting and fixing the second cavities (CV2) and the substrate units (SA) provided in the second mold (M2) so that they face each other, and then providing a transparent molding compound to the second cavity (CV2) to reverse mold molding members (ENC1, ENC2, ENC3) for individual elements.

[0178] At this time, the second mold (M2) may include a protrusion (PT) at a position corresponding to the groove (HM). The shape of the protrusion (PT) may correspond to the shape of the groove (HM). For example, when the cross-sectional shape of the protrusion (PT) has an '8' shape, the groove (HM) formed when the substrate strip (1000) and the second mold (M2) are separated may be a trench structure having an '8' shape in cross-section. That is, the groove (HM) may be a cavity having a package substrate (SUB) exposed in an '8' shape in cross-section as a bottom surface and an area of ​​the molding member (ENC) exposed in the thickness direction along the bottom surface as a side surface.

[0179] Next, as illustrated in Fig. 19, a partition wall (PTW) for individual components can be formed by dispensing molding. Dispensing molding can be performed by applying a liquid black epoxy molding compound (EMC) to the inside of a groove (HM) using a discharge needle (ND).

[0180] Afterwards, a polishing process is performed to smoothly process the upper surface of the bulkhead (PTW) and the upper surface of the molding member (ENC), so that the upper surfaces of the bulkhead (PTW) and the molding member (ENC) can be arranged on the same plane.

[0181] Next, as illustrated in FIG. 19, the array can be singulated by cutting it along a cut line (CUT) into individual optical sensor packages.

[0182] In this way, according to the optical sensor manufacturing method according to one embodiment of the present invention, the manufacturing process can be minimized in the optical sensor package manufacturing stage, thereby reducing the process time and manufacturing cost.

[0183] Those skilled in the art will appreciate that the present invention can be implemented in modified forms without departing from the essential characteristics of the above-described description. Therefore, the disclosed methods should be considered illustrative rather than restrictive. The scope of the present invention is set forth in the claims, not the foregoing description, and all differences within the scope equivalent thereto should be construed as being encompassed by the present invention.

Claims

1. In the optical sensor package, A light emitting portion disposed on a package substrate and emitting a first light toward a target; A light receiving unit disposed on the package substrate and receiving second light reflected from the first light onto the target; A molding member formed on the package substrate to surround the upper surface of the exposed package substrate portion, the light emitting portion, and the light receiving portion, and including a groove formed in the thickness direction between the light emitting portion and the light receiving portion; The above home is an optical sensor package filled with an opaque material.

2. In paragraph 1, An optical sensor package in which the lower surface of the opaque material is in contact with the package substrate and the upper surface of the opaque material is exposed to the outside.

3. In paragraph 2, An optical sensor package wherein the upper surface of the opaque material is positioned on the same plane as the upper surface of the molding member.

4. In paragraph 2, An optical sensor package in which the side surfaces connecting the upper surface and the lower surface of the opaque material are in contact with the molding member.

5. In paragraph 1, An optical sensor package wherein the above molding member is formed of a transparent molding compound and the above opaque material is a black epoxy molding compound.

6. In paragraph 1, The above home is an optical sensor package having a rectangular parallelepiped shape.

7. In paragraph 1, An optical sensor package wherein the target includes an identification material that excites light of a first wavelength into light of a second wavelength different from the first wavelength, wherein the first light is light of the first wavelength, and the second light is light of the second wavelength.

8. In paragraph 7, The above identification material is an optical sensor package containing a lanthanide material.

9. In paragraph 1, Further comprising a semiconductor chip arranged on the above package substrate, An optical sensor package, wherein the light receiving unit is disposed on at least one of the semiconductor chip and the package substrate opposite the light emitting unit with respect to the semiconductor chip.

10. In paragraph 9, An optical sensor package, wherein the height from the upper surface of the package substrate to the upper surface of the semiconductor chip is higher than the height from the upper surface of the package substrate to the upper surface of the light-emitting portion.

11. A step of mounting sensor elements such as a light emitting unit and a light receiving unit on each of the above substrate units; A step of forming a molding member including a groove formed in the thickness direction between the light emitting portion and the light receiving portion in each of the above substrate units; and A method for manufacturing an optical sensor package, comprising: a step of filling the groove with an opaque material.

12. In paragraph 11, A method for manufacturing an optical sensor package, wherein the step of forming the above molding member is performed by transfer molding using a transparent molding compound.

13. In paragraph 12, The above transfer molding is, A step of placing a mold on the substrate strip, and mounting and fixing the mold so that the cavities provided in the mold and the substrate units face each other; and A method for manufacturing an optical sensor package, characterized in that the molding comprises a step of providing the transparent molding compound to the cavity.

14. In paragraph 11, A method for manufacturing an optical sensor package, characterized in that the step of filling the groove comprises dispensing molding by using a black epoxy molding compound as a sealing agent and injecting the sealing agent into the groove.

15. In paragraph 11, A method for manufacturing an optical sensor package, further comprising: a step of cutting the substrate strip into substrate unit units.

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