Slurry and polishing method

Abstract

This slurry contains abrasive grains and a compound A including at least one selected from the group consisting of nitrogen atoms and phosphorus atoms, wherein the octanol-water partition coefficient AlogP of the compound A is 2.00 or more, and the pH is 5.0 or more. This polishing method comprises a step for polishing a member to be polished using the slurry.

Description

Slurry and polishing method

[0001] The present disclosure relates to slurries, polishing methods, and the like.

[0002] In the field of semiconductor manufacturing, as the performance of VLSI devices improves, it is becoming increasingly difficult to achieve both high integration and high speed through miniaturization technology, which is an extension of conventional technology. Therefore, technologies that enable vertical integration (i.e., multi-layer wiring technology) are being developed while continuing to miniaturize semiconductor elements.

[0003] One of the most important technologies in the process of manufacturing devices with multilayered wiring is CMP (chemical mechanical polishing). CMP is a technology for flattening the surface of a substrate obtained by forming a thin film on the substrate by chemical vapor deposition (CVD) or the like. For example, flattening by CMP is essential to ensure the depth of focus in lithography. If the surface of the substrate is uneven, it can cause inconveniences such as making it impossible to focus in the exposure process or making it impossible to form a fine wiring structure satisfactorily. CMP is also used in the device manufacturing process when forming a plasma oxide film (BPSG, HDP-SiO ２ The method is also applicable to a process for forming an isolation (inter-element isolation; STI: shallow trench isolation) region by polishing a silicon dioxide film (SiO2, p-TEOS, etc.); a process for forming an ILD film (an interlayer insulating film that electrically insulates metal members (wiring, etc.) in the same layer); and a process for planarizing a plug (e.g., an Al / Cu plug) after embedding a film containing silicon oxide in a metal wiring.

[0004] CMP is typically performed using an apparatus capable of supplying a polishing liquid onto a polishing pad. The surface of the substrate is polished by pressing the substrate against the polishing pad while supplying the polishing liquid between the surface of the substrate and the polishing pad. Thus, the polishing liquid is one of the key technologies in CMP technology, and various polishing liquids have been developed to obtain high-performance polishing liquids (see, for example, Patent Document 1 below).

[0005] Japanese Patent Application Laid-Open No. 2008-288537

[0006] For a slurry that can be used as a polishing liquid, there are cases where it is required to actively remove one material to be polished while suppressing the removal of another material to be polished, for example, there are cases where it is required to actively remove silicon oxide while suppressing the removal of polysilicon. For such a slurry, it is required to obtain a high removal rate of silicon oxide while reducing the removal rate of polysilicon.

[0007] An object of one aspect of the present disclosure is to provide a slurry that can reduce the polishing rate of polysilicon while achieving a high polishing rate of silicon oxide.Another object of the present disclosure is to provide a polishing method using such a slurry.

[0008] The present disclosure relates to the following items [1] to

[19] , etc. [1] A slurry containing abrasive grains and a compound A containing at least one selected from the group consisting of nitrogen and phosphorus atoms, wherein the compound A has an octanol / water partition coefficient AlogP of 2.00 or more and a pH of 5.0 or more. [2] The slurry according to [1], wherein the compound A has an octanol / water partition coefficient AlogP of 10.00 or less. [3] The slurry according to [1] or [2], wherein the compound A has an octanol / water partition coefficient AlogP of 5.00 or less. [4] The slurry according to any one of [1] to [3], wherein the compound A comprises an amine. [5] The slurry according to any one of [1] to [4], wherein the compound A comprises an amine having a nitrogen-containing six-membered ring. [6] The slurry according to any one of [1] to [5], wherein the compound A comprises an amine salt. [7] The slurry according to any one of [1] to [6], wherein compound A comprises an acid addition salt of an alkylenediamine. [8] The slurry according to any one of [1] to [7], wherein compound A comprises a quaternary ammonium compound. [9] The slurry according to any one of [1] to [8], wherein compound A comprises a tetraalkylammonium salt.

[10] The slurry according to any one of [1] to [9], wherein compound A comprises an aryltrialkylammonium salt.

[11] The slurry according to any one of [1] to

[10] , wherein compound A comprises a quaternary phosphonium compound.

[12] The slurry according to any one of [1] to

[11] , wherein compound A comprises a tetraalkylphosphonium salt.

[13] The slurry according to any one of [1] to

[12] , wherein compound A comprises a pyridinium salt.

[14] The slurry according to any one of [1] to

[13] , wherein the content of compound A is 0.0010 to 0.0100 mass % based on the total mass of the slurry.

[15] The slurry according to any one of [1] to

[14] , wherein the abrasive grains contain cerium-based particles.

[16] The slurry according to any one of [1] to

[15] , wherein the abrasive grains have an average particle size of 15.0 nm or less.

[17] The slurry according to any one of [1] to

[16] , wherein the pH is 8.0 or less.

[18] A polishing method comprising a step of polishing a member to be polished using the slurry according to any one of [1] to

[17] .

[19] The polishing method according to

[18] , wherein the member to be polished contains at least one material selected from the group consisting of silicon oxide and polysilicon.

[0009] According to one aspect of the present disclosure, it is possible to provide a slurry that can achieve a high removal rate of silicon oxide while reducing the removal rate of polysilicon. According to another aspect of the present disclosure, it is possible to provide a polishing method using such a slurry.

[0010] Hereinafter, embodiments of the present disclosure will be described in detail.

[0011] In this specification, numerical ranges indicated using "to" indicate a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. A numerical range "A or greater" means a range exceeding A and A. A numerical range "A or less" means a range less than A and A. In numerical ranges described in stages in this specification, the upper or lower limit of a numerical range in a certain stage can be arbitrarily combined with the upper or lower limit of a numerical range in another stage. In numerical ranges described in this specification, the upper or lower limit of the numerical range may be replaced with a value shown in the examples. "A or B" may include either A or B, or may include both. Unless otherwise specified, the materials exemplified in this specification can be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition refers to the total amount of the multiple substances present in the composition, unless otherwise specified. The terms "layer" and "film" include structures that are formed over the entire surface as well as structures that are formed only partially when observed in a plan view. The term "process" includes not only an independent process but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved. Unless otherwise specified, an "alkyl group" may be linear, branched, or cyclic. A hydroxy group does not include the OH structure contained in a carboxy group, a sulfo group, or a phosphate group.

[0012] The slurry according to this embodiment contains abrasive grains and a compound A containing at least one atom selected from the group consisting of a nitrogen atom and a phosphorus atom. In the slurry according to this embodiment, the octanol / water partition coefficient AlogP of the compound A is 2.00 or more, and the pH is 5.0 or more.

[0013] The slurry according to this embodiment can reduce the polishing rate of polysilicon while achieving a high polishing rate of silicon oxide. The slurry according to this embodiment can achieve a polishing rate of silicon oxide of, for example, 50.0 nm / min or more (preferably, 80.0 nm / min or more, 100.0 nm / min or more, 120.0 nm / min or more, 130.0 nm / min or more, 140.0 nm / min or more, 150.0 nm / min or more, etc.) in the evaluation method described in the Examples below. The slurry according to this embodiment can achieve a polishing rate of polysilicon of, for example, 15.0 nm / min or less (preferably, 10.0 nm / min or less, 5.0 nm / min or less, 4.0 nm / min or less, 3.0 nm / min or less, 2.0 nm / min or less, 1.0 nm / min or less, etc.) in the evaluation method described in the Examples below.

[0014] The factors that enable a high silicon oxide polishing rate to be achieved while reducing the polysilicon polishing rate are not entirely clear, but are presumed to be as follows. However, the factors are not limited to the following. That is, when compound A containing at least one selected from the group consisting of nitrogen atoms and phosphorus atoms has an octanol / water partition coefficient AlogP of 2.00 or more, compound A tends to exhibit high hydrophobicity. Furthermore, when the pH is 5.0 or higher, silicon oxide tends to be hydrophilic while polysilicon tends to be hydrophobic, so compound A is less likely to adsorb to silicon oxide but more likely to adsorb to polysilicon. In this case, compound A adsorbs to polysilicon, making it difficult for abrasive grains to come into contact with polysilicon, thereby suppressing polysilicon polishing. On the other hand, compound A is less likely to adsorb to silicon oxide, making it difficult for silicon oxide polishing to be suppressed. As described above, the slurry according to this embodiment can achieve a high silicon oxide polishing rate while reducing the polysilicon polishing rate.

[0015] The slurry according to this embodiment can be used to polish a member to be polished that contains silicon oxide, can be used to polish a member to be polished that contains polysilicon, and can be used to polish a member to be polished that contains silicon oxide and polysilicon. The slurry according to this embodiment only needs to have the property of being able to obtain a high polishing rate for silicon oxide while reducing the polishing rate for polysilicon, and may polish silicon oxide and polysilicon individually, or may polish silicon oxide and polysilicon simultaneously. The slurry according to this embodiment can be used as a polishing slurry and as a CMP polishing liquid. The method for producing the slurry according to this embodiment includes a step of mixing abrasive grains and compound A with each other.

[0016] (Abrasive Grains) The slurry according to this embodiment contains abrasive grains. The constituent material of the abrasive grains may be an inorganic material, such as a cerium compound (a compound containing cerium), alumina, silica, titania, zirconia, magnesia, mullite, silicon nitride, α-sialon, aluminum nitride, titanium nitride, silicon carbide, or boron carbide. Examples of cerium compounds include cerium hydroxide (a compound having a hydroxy group bonded to a cerium atom), cerium oxide, ammonium cerium nitrate, cerium acetate, cerium sulfate hydrate, cerium bromate, cerium bromide, cerium chloride, cerium oxalate, cerium nitrate, and cerium carbonate. The cerium compound may contain tetravalent cerium or may contain trivalent cerium. The cerium-based particles may have water of hydration. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, the abrasive grains may contain a cerium compound, may contain cerium-based particles (particles containing a cerium compound), may contain at least one selected from the group consisting of cerium hydroxide and cerium oxide, may contain cerium hydroxide, or may contain cerium hydroxide particles (particles containing cerium hydroxide).

[0017] The average particle size of the abrasive grains may be in the following ranges, from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. The average particle size of the abrasive grains may be 0.1 nm or more, 0.5 nm or more, 1.0 nm or more, 2.0 nm or more, 3.0 nm or more, 4.0 nm or more, 5.0 nm or more, 6.0 nm or more, 7.0 nm or more, 7.5 nm or more, 8.0 nm or more, 8.5 nm or more, 9.0 nm or more, or 9.5 nm or more. The average particle size of the abrasive grains may be 200.0 nm or less, 150.0 nm or less, 100.0 nm or less, 80.0 nm or less, 50.0 nm or less, 30.0 nm or less, 25.0 nm or less, 20.0 nm or less to 18.0 nm or less, 15.0 nm or less, 14.0 nm or less, 13.0 nm or less, 12.0 nm or less, 11.0 nm or less, or 10.0 nm or less. From these viewpoints, the average particle size of the abrasive grains may be 0.1 to 200.0 nm, 0.1 to 50.0 nm, 0.1 to 30.0 nm, 0.1 to 15.0 nm, 0.1 to 12.0 nm, 1.0 to 200.0 nm, 1.0 to 50.0 nm, 1.0 to 30.0 nm, 1.0 to 15.0 nm, 1.0 to 12.0 nm, 5.0 to 200.0 nm, 5.0 to 50.0 nm, 5.0 to 30.0 nm, 5.0 to 15.0 nm, or 5.0 to 12.0 nm. The average particle size of the abrasive grains is the average particle size of the abrasive grains in the slurry, and may be the 50% cumulative diameter (D50) in the mass-based cumulative particle size distribution curve. The average particle size of the abrasive grains can be measured by the method described in the Examples below.

[0018] The zeta potential (surface potential) of the abrasive grains may be positive in the slurry (the zeta potential may exceed 0 mV) from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. The zeta potential of the abrasive grains can be measured by the method described in the Examples below.

[0019] The content of the cerium compound or cerium hydroxide in the abrasive grains may be 50.0 to 100.0 mass%, more than 50.0 mass% and 100.0 mass% or less, 55.0 to 100.0 mass%, 60.0 to 100.0 mass%, 65.0 to 100.0 mass%, 70.0 to 100.0 mass%, or 75.0 to 100.0 mass%, based on the total mass of the abrasive grains (total mass of the abrasive grains contained in the slurry), from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon.

[0020] From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content of the abrasive grains may be within the following ranges based on the total mass of the slurry: The content of the abrasive grains may be 0.001 mass % or more, 0.005 mass % or more, 0.010 mass % or more, 0.020 mass % or more, 0.025 mass % or more, 0.030 mass % or more, 0.035 mass % or more, 0.040 mass % or more, 0.045 mass % or more, or 0.050 mass % or more. The content of abrasive grains is 10.000 mass% or less, 5.000 mass% or less, 3.000 mass% or less, 2.000 mass% or less, 1.000 mass% or less, 0.500 mass% or less, 0.300 mass% or less, 0.200 mass% or less, It may be 0.100 mass% or less, 0.090 mass% or less, 0.080 mass% or less, 0.070 mass% or less, 0.065 mass% or less, 0.060 mass% or less, 0.055 mass% or less, or 0.050 mass% or less. From these viewpoints, the content of the abrasive grains may be 0.001 to 10.000 mass%, 0.001 to 1.000 mass%, 0.001 to 0.100 mass%, 0.010 to 10.000 mass%, 0.010 to 1.000 mass%, 0.010 to 0.100 mass%, 0.030 to 10.000 mass%, 0.030 to 1.000 mass%, or 0.030 to 0.100 mass%.

[0021] (Compound A) The slurry according to this embodiment contains Compound A containing at least one atom selected from the group consisting of a nitrogen atom and a phosphorus atom. Compound A may contain at least one atom selected from the group consisting of a quaternary nitrogen atom and a quaternary phosphorus atom. Compound A may contain a nitrogen atom that forms a heterocyclic ring, or may contain a nitrogen atom that does not form a heterocyclic ring.

[0022] The octanol / water partition coefficient AlogP (AlogP value) of compound A is 2.00 or more. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, the octanol / water partition coefficient AlogP of compound A may be in the following range. The octanol / water partition coefficient AlogP of compound A may be 2.10 or more, 2.20 or more, 2.30 or more, 2.40 or more, 2.50 or more, 2.60 or more, 2.70 or more, 2.80 or more, 2.90 or more, 3.00 or more, 4.00 or more, 5.00 or more, 6.00 or more, 7.00 or more, 8.00 or more, or 9.00 or more. The octanol / water partition coefficient AlogP of compound A may be 15.00 or less, 12.00 or less, 10.00 or less, 9.00 or less, 8.00 or less, 7.00 or less, 6.00 or less, 5.00 or less, 4.00 or less, 3.00 or less, 2.90 or less, 2.80 or less, 2.70 or less, 2.60 or less, 2.50 or less, 2.40 or less, or 2.30 or less. From these viewpoints, the octanol / water partition coefficient AlogP of compound A may be 2.00 to 15.00, 2.00 to 10.00, 2.00 to 5.00, 2.00 to 3.00, 2.30 to 15.00, 2.30 to 10.00, 2.30 to 5.00, 2.30 to 3.00, 2.50 to 15.00, 2.50 to 10.00, 2.50 to 5.00, 2.50 to 3.00, 3.00 to 15.00, 3.00 to 10.00, or 3.00 to 5.00.

[0023] The octanol / water partition coefficient AlogP is an index representing the hydrophobicity of a compound. The higher the octanol / water partition coefficient AlogP, the higher the hydrophobicity of the compound tends to be. For example, when compound A has a hydrocarbon chain, the longer the hydrocarbon chain (the greater the number of carbon atoms), the higher the octanol / water partition coefficient AlogP tends to be. The octanol / water partition coefficient AlogP can be obtained by calculation using a calculation method that takes into account the molecular structure, properties, etc., based on atomic information constituting the compound.

[0024] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may have at least one group selected from the group consisting of an alkyl group and an aryl group as a group bonded to a nitrogen atom or a phosphorus atom. Examples of the aryl group include a benzyl group and a phenyl group. The alkyl group and aryl group bonded to the nitrogen atom or the phosphorus atom may be unsubstituted or may have a substituent (e.g., a substituent that does not fall under the category of a hydrocarbon group) that substitutes a hydrogen atom of the alkyl group or aryl group. Examples of the substituent that substitutes a hydrogen atom of the alkyl group or aryl group include a hydroxy group, a carboxy group, a carboxylate group, an aldehyde group, an alkoxy group, an ester group, an amino group, an amide group, a nitro group, a cyano group, a mercapto group, and a sulfo group (HSO ３ group), SO ３ － groups, and halogeno groups (fluoro, chloro, bromo, iodo, etc.).

[0025] In compound A, from the viewpoint of easily obtaining a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, the number of alkyl groups bonded to the nitrogen atom or phosphorus atom may be 1 to 3, 1 to 2, 2 to 4, 2 to 3, or 3 to 4. In compound A, from the viewpoint of easily obtaining a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, the number of aryl groups (e.g., benzyl groups) bonded to the nitrogen atom or phosphorus atom may be 1 to 3 or 1 to 2.

[0026] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may have an alkyl group or an unsubstituted alkyl group having the following number of carbon atoms as a substituent bonded to a nitrogen atom or a phosphorus atom. The number of carbon atoms may be 1 or more, 2 or more, 3 or more, 4 or more, 5 or more, 6 or more, 8 or more, 10 or more, 12 or more, 14 or more, 16 or more, or 18 or more. The number of carbon atoms may be 30 or less, 24 or less, 20 or less, 18 or less, 16 or less, 14 or less, 12 or less, 10 or less, 8 or less, 6 or less, 5 or less, 4 or less, 3 or less, or 2 or less. From these viewpoints, the number of carbon atoms may be 1 to 30, 1 to 18, 1 to 16, 1 to 14, 1 to 6, 1 to 4, 1 to 3, 1 to 2, 2 to 30, 2 to 18, 2 to 16, 2 to 14, 2 to 6, 2 to 4, 2 to 3, 4 to 30, 4 to 18, 4 to 16, 4 to 14, 4 to 6, 6 to 30, 6 to 18, 6 to 16, 6 to 14, 14 to 30, 14 to 18, 14 to 16, 16 to 30, 16 to 18, or 18 to 30.

[0027] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain an amine, and may contain at least one amine selected from the group consisting of primary amines, secondary amines, and tertiary amines. As the amine, a compound in which at least one hydrogen atom of ammonia is substituted with a substituent can be used.

[0028] Examples of amines include amines having a nitrogen-containing heterocycle, alkylamines, arylamines, alkanolamines, alkylenediamines, and aryldiamines. Examples of the nitrogen-containing heterocycle of the amine having a nitrogen-containing heterocycle include a nitrogen-containing six-membered ring and a nitrogen-containing five-membered ring. Examples of the nitrogen-containing six-membered ring include a pyridine ring, a diazine ring (e.g., a pyrimidine ring, a pyrazine ring), a triazine ring, a tetrazine ring, a quinoline ring, a piperidine ring, and an isoquinoline ring. Examples of the nitrogen-containing five-membered ring include a pyrrole ring, a pyrazole ring, and an imidazole ring. The number of nitrogen-containing heterocycles, nitrogen-containing six-membered rings, diazine rings, or pyrimidine rings in the amine having a nitrogen-containing heterocycle may be 1 to 3, 1 to 2, or 2 to 3, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. The amine having a nitrogen-containing heterocycle may have a disulfide group (e.g., one disulfide group), from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. Compound A may contain an amine having a nitrogen-containing heterocycle, an amine having a nitrogen-containing six-membered ring, an amine having a diazine ring, an amine having a pyrimidine ring, or thiamine disulfide, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon.

[0029] Compound A may contain an amine salt from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. Examples of the amine salt include acid addition salts of the above-mentioned amines. Examples of the acid addition salt include organic acid addition salts (e.g., carboxylic acid addition salts such as acetates) and inorganic acid addition salts (e.g., hydrochlorides). The amine salt may be ionized (dissociated) in the slurry or may exist as a salt. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain a carboxylic acid addition salt of an amine, an acid addition salt of an alkylenediamine, a carboxylic acid addition salt of an alkylenediamine, an acid addition salt of a diarylalkylenediamine, a carboxylic acid addition salt of a diarylalkylenediamine, an acid addition salt of a dibenzylalkylenediamine, or a carboxylic acid addition salt of a dibenzylalkylenediamine. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, the number of carbon atoms in the alkylene group in the alkylenediamine, diarylalkylenediamine, or dibenzylalkylenediamine may be 1 to 5, 1 to 4, 1 to 3, 1 to 2, 2 to 5, 2 to 4, or 2 to 3. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain N,N'-dibenzylethylenediamine diacetate.

[0030] Compound A may contain an onium compound (a compound containing an organic group, a nitrogen atom, a phosphorus atom, or the like, which is positively charged by bonding with a hydrogen atom, etc.) from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. The onium compound may be an onium salt (a compound having a cation and a counter anion independent of each other) or a zwitterionic compound (a compound having a positive charge and a negative charge in the molecule) from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. Examples of the counter anion in the onium salt include halide ions (chloride ions, bromide ions, iodide ions, etc.). The onium salt may be ionized (dissociated) in the slurry or may exist as a salt. Examples of the onium salt include ammonium salts, phosphonium salts, pyridinium salts, pyrrolidinium salts, and imidazolinium salts. Compound A may contain at least one selected from the group consisting of ammonium salts, phosphonium salts, and pyridinium salts, from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon.

[0031] Compound A may contain a quaternary onium compound (e.g., a compound containing a nitrogen atom, a phosphorus atom, or the like bonded to four carbon atoms) from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. The quaternary onium compound may be a quaternary onium salt or a zwitterionic compound from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon.

[0032] From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, compound A may include at least one compound selected from the group consisting of quaternary ammonium compounds and quaternary phosphonium compounds, or may include at least one compound selected from the group consisting of quaternary ammonium salts and quaternary phosphonium salts.

[0033] From the viewpoint of easily obtaining a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain a quaternary ammonium compound, may contain a quaternary ammonium salt, may contain at least one selected from the group consisting of tetraalkylammonium salts, aryltrialkylammonium salts, and dialkylammonium salts, may contain at least one selected from the group consisting of tetraalkylammonium salts, benzyltrialkylammonium salts, and dialkylammonium salts, may contain a tetraalkylammonium salt, may contain an aryltrialkylammonium salt, may contain a benzyltrialkylammonium salt, may contain a dialkylammonium salt, and may contain at least one selected from the group consisting of trimethylstearylammonium chloride, benzyldimethylstearylammonium chloride, benzyltributylammonium chloride, and 3-[(3-cholamidopropyl)dimethylammonio]-3-propanesulfonate.

[0034] From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, compound A may contain a quaternary phosphonium compound, may contain a quaternary phosphonium salt, may contain a tetraalkylphosphonium salt, or may contain trihexyl(tetradecyl)phosphonium chloride.

[0035] In the quaternary ammonium compound, tetraalkylammonium salt, aryltrialkylammonium salt, dialkylammonium salt, quaternary phosphonium salt, and tetraalkylphosphonium salt, the number of alkyl groups and aryl groups (e.g., benzyl groups) bonded to the quaternary nitrogen atom or quaternary phosphorus atom, and the number of carbon atoms in the alkyl group bonded to the quaternary nitrogen atom or quaternary phosphorus atom may be within the ranges described above for the number and number of carbon atoms of the alkyl groups and aryl groups bonded to the nitrogen atom or phosphorus atom of Compound A.

[0036] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain a zwitterionic compound as a quaternary onium compound, and the zwitterionic compound contains at least one selected from the group consisting of a quaternary nitrogen atom and a quaternary phosphorus atom, an alkyl group bonded to the quaternary nitrogen atom or the quaternary phosphorus atom, and an anionic group (e.g., SO ) that substitutes a hydrogen atom of the alkyl group. ３ － group), and may include compounds further having an amide group bonded to the alkyl group of such compounds, and may include 3-[(3-cholamidopropyl)dimethylammonio]-3-propanesulfonate.

[0037] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain a pyridinium salt or may contain an alkylpyridinium salt. The alkylpyridinium salt has an alkyl group bonded to a nitrogen atom constituting a heterocycle. In the alkylpyridinium salt, the number of carbon atoms in the alkyl group bonded to the nitrogen atom may be within the ranges described above for the number of carbon atoms in the alkyl group bonded to the nitrogen atom of compound A. From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain cetylpyridinium chloride.

[0038] From the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon, compound A may contain at least one selected from the group consisting of amines, amine salts, and onium compounds, may contain at least one selected from the group consisting of amines, amine salts, quaternary onium compounds, and pyridinium salts, may contain at least one selected from the group consisting of amines, amine salts, quaternary ammonium salts, quaternary phosphonium salts, and pyridinium salts, may contain at least one selected from the group consisting of amines having a nitrogen-containing heterocycle, carboxylic acid addition salts of alkylenediamines, tetraalkylammonium salts, aryltrialkylammonium salts, The compound may contain at least one selected from the group consisting of ammonium salts, dialkylammonium salts, tetraalkylphosphonium salts, and alkylpyridinium salts, and may contain at least one selected from the group consisting of thiamine disulfide, N,N'-dibenzylethylenediamine diacetate, trimethylstearylammonium chloride, benzyldimethylstearylammonium chloride, benzyltributylammonium chloride, 3-[(3-cholamidopropyl)dimethylammonio]-3-propanesulfonate, trihexyl(tetradecyl)phosphonium chloride, and cetylpyridinium chloride.

[0039] The molecular weight A1 of compound A, the molecular weight of the amine, the molecular weight of the amine salt, or the molecular weight of the onium compound may be in the following ranges from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon: Molecular weight A1 may be 200 or more, 220 or more, 250 or more, 280 or more, 300 or more, 310 or more, 320 or more, 330 or more, 340 or more, 350 or more, 380 or more, 400 or more, 420 or more, 450 or more, 470 or more, 500 or more, 530 or more, 550 or more, 570 or more, or 600 or more. The molecular weight A1 may be 800 or less, 750 or less, 700 or less, 650 or less, 620 or less, 600 or less, 570 or less, 550 or less, 530 or less, 500 or less, 470 or less, 450 or less, 420 or less, 400 or less, 380 or less, 350 or less, 340 or less, 330 or less, 320 or less, 310 or less, 300 or less, 280 or less, or 250 or less. From these viewpoints, the molecular weight A1 may be 200 to 800, 200 to 600, 200 to 400, 240 to 800, 240 to 600, 240 to 400, 300 to 800, 300 to 600, or 300 to 400.

[0040] The content A2 of compound A, amine, amine salt, or onium compound may be in the following ranges based on the total mass of the slurry, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon: The content A2 may be 0.0001% by mass or more, 0.0005% by mass or more, 0.0010% by mass or more, 0.0020% by mass or more, 0.0025% by mass or more, 0.0030% by mass or more, 0.0035% by mass or more, 0.0040% by mass or more, 0.0042% by mass or more, 0.0045% by mass or more, 0.0048% by mass or more, or 0.0050% by mass or more. Content A2 is 1.0000 mass% or less, 0.5000 mass% or less, 0.3000 mass% or less, 0.2000 mass% or less, 0.1000 mass% or less, 0.0500 mass% or less, 0.0300 mass% or less, 0.0200 mass% or less, 0.0100 mass% or less, 0 .0090 mass% or less, 0.0080 mass% or less, 0.0070 mass% or less, 0.0065 mass% or less, 0.0060 mass% or less, 0.0058 mass% or less, 0.0055 mass% or less, 0.0052 mass% or less, or 0.0050 mass% or less. From these viewpoints, the content A2 may be 0.0001 to 1.0000 mass%, 0.0001 to 0.1000 mass%, 0.0001 to 0.0100 mass%, 0.0010 to 1.0000 mass%, 0.0010 to 0.1000 mass%, 0.0010 to 0.0100 mass%, 0.0030 to 1.0000 mass%, 0.0030 to 0.1000 mass%, or 0.0030 to 0.0100 mass%.

[0041] The content A3 of compound A, amine, amine salt, or onium compound may be in the following ranges relative to 100 parts by mass of the abrasive grains, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon: The content A3 may be 0.1 parts by mass or more, 0.5 parts by mass or more, 1.0 parts by mass or more, 2.0 parts by mass or more, 3.0 parts by mass or more, 4.0 parts by mass or more, 5.0 parts by mass or more, 6.0 parts by mass or more, 7.0 parts by mass or more, 8.0 parts by mass or more, 8.5 parts by mass or more, 9.0 parts by mass or more, 9.2 parts by mass or more, 9.5 parts by mass or more, 9.8 parts by mass or more, or 10.0 parts by mass or more. The content A3 may be 100.0 parts by mass or less, 80.0 parts by mass or less, 50.0 parts by mass or less, 40.0 parts by mass or less, 30.0 parts by mass or less, 25.0 parts by mass or less, 20.0 parts by mass or less, 18.0 parts by mass or less, 15.0 parts by mass or less, 12.0 parts by mass or less, or 10.0 parts by mass or less. From these viewpoints, the content A3 may be 0.1 to 100.0 parts by mass, 0.1 to 30.0 parts by mass, 0.1 to 15.0 parts by mass, 1.0 to 100.0 parts by mass, 1.0 to 30.0 parts by mass, 1.0 to 15.0 parts by mass, 5.0 to 100.0 parts by mass, 5.0 to 30.0 parts by mass, or 5.0 to 15.0 parts by mass.

[0042] (Water-soluble polymer) The slurry according to the present embodiment may contain a water-soluble polymer. The water-soluble polymer may have the effect of adjusting the dispersion stability of the abrasive grains, etc. The "water-soluble polymer" is defined as a polymer that dissolves in an amount of 0.1 g or more in 100 g of water. As the water-soluble polymer, a compound that does not fall under Compound A can be used.

[0043] Examples of water-soluble polymers include glycerin-based polymers such as polyglycerin and polyglycerin derivatives; polycarboxylic acids such as polyacrylic acid and polymaleic acid; acrylic polymers such as polyacrylamide and polydimethylacrylamide; polysaccharides such as carboxymethyl cellulose, agar, curdlan, dextrin, cyclodextrin, and pullulan; and vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone, and polyacrolein. From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the water-soluble polymer may contain a glycerin-based polymer, or may contain at least one selected from the group consisting of polyglycerin and polyglycerin derivatives, or may contain polyglycerin.

[0044] The weight-average molecular weight B1 of the water-soluble polymer, the glycerin-based polymer, or the polyglycerin may be in the following ranges from the viewpoint of easily achieving a high removal rate for silicon oxide or easily reducing the removal rate for polysilicon. The weight-average molecular weight B1 may be 100 or more, 300 or more, 500 or more, 600 or more, 650 or more, 700 or more, or 750 or more. The weight-average molecular weight B1 may be 10,000 or less, 5,000 or less, 2,000 or less, 1,500 or less, 1,000 or less, 900 or less, 800 or less, 780 or less, or 760 or less. From these viewpoints, the weight average molecular weight B1 may be 100 to 10,000, 100 to 2,000, 100 to 1,000, 300 to 10,000, 300 to 2,000, 300 to 1,000, 500 to 10,000, 500 to 2,000, or 500 to 1,000.

[0045] The weight average molecular weight B1 can be measured, for example, by gel permeation chromatography (GPC) under the following conditions. Sample: 20 μL Standard polyethylene glycol: Standard polyethylene glycol (molecular weight: 106, 194, 440, 600, 1470, 4100, 7100, 10300, 12600, and 23000) manufactured by Polymer Laboratory Co., Ltd. Detector: RI-monitor, trade name "Shodex-RI SE-61" manufactured by Resonaq Co., Ltd. Pump: trade name "L-6000" manufactured by Hitachi, Ltd. Column: trade names "GS-220HQ" and "GS-620HQ" manufactured by Resonaq Co., Ltd., connected in this order Eluent: 0.4 mol / L aqueous sodium chloride solution Measurement temperature: 30°C Flow rate: 1.00 mL / min Measurement time: 45 min

[0046] The content B2 of the water-soluble polymer, glycerin-based polymer, or polyglycerin may be in the following ranges based on the total mass of the slurry, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. The content B2 may be 0.01 mass% or more, 0.03 mass% or more, 0.05 mass% or more, 0.06 mass% or more, 0.07 mass% or more, 0.08 mass% or more, or 0.10 mass% or more. The content B2 may be 1.00 mass% or less, 0.80 mass% or less, 0.50 mass% or less, 0.30 mass% or less, 0.20 mass% or less, 0.18 mass% or less, 0.15 mass% or less, 0.12 mass% or less, or 0.10 mass% or less. From these viewpoints, the content B2 may be 0.01 to 1.00 mass%, 0.01 to 0.50 mass%, 0.01 to 0.20 mass%, 0.03 to 1.00 mass%, 0.03 to 0.50 mass%, 0.03 to 0.20 mass%, 0.05 to 1.00 mass%, 0.05 to 0.50 mass%, or 0.05 to 0.20 mass%.

[0047] The content B3 of the water-soluble polymer, glycerin-based polymer, or polyglycerin may be within the following ranges per 100 parts by mass of abrasive grains, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. The content B3 may be 1 part by mass or more, 5 parts by mass or more, 10 parts by mass or more, 30 parts by mass or more, 50 parts by mass or more, 80 parts by mass or more, 100 parts by mass or more, 120 parts by mass or more, 150 parts by mass or more, 180 parts by mass or more, or 200 parts by mass or more. The content B3 may be 1,000 parts by mass or less, 800 parts by mass or less, 500 parts by mass or less, 400 parts by mass or less, 350 parts by mass or less, 300 parts by mass or less, 280 parts by mass or less, 250 parts by mass or less, 220 parts by mass or less, or 200 parts by mass or less. From these viewpoints, the content B3 may be 1 to 1000 parts by mass, 1 to 500 parts by mass, 1 to 250 parts by mass, 50 to 1000 parts by mass, 50 to 500 parts by mass, 50 to 250 parts by mass, 150 to 1000 parts by mass, 150 to 500 parts by mass, or 150 to 250 parts by mass.

[0048] The content B4 of the water-soluble polymer, glycerin-based polymer, or polyglycerin may be within the following ranges relative to 100 parts by mass of Compound A, from the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon. The content B4 may be 10 parts by mass or more, 50 parts by mass or more, 100 parts by mass or more, 300 parts by mass or more, 500 parts by mass or more, 800 parts by mass or more, 1000 parts by mass or more, 1200 parts by mass or more, 1500 parts by mass or more, 1800 parts by mass or more, or 2000 parts by mass or more. The content B4 may be 10,000 parts by mass or less, 8,000 parts by mass or less, 5,000 parts by mass or less, 4,000 parts by mass or less, 3,500 parts by mass or less, 3,000 parts by mass or less, 2,800 parts by mass or less, 2,500 parts by mass or less, 2,200 parts by mass or less, or 2,000 parts by mass or less. From these viewpoints, the content B4 may be 10 to 10,000 parts by mass, 10 to 5,000 parts by mass, 10 to 3,000 parts by mass, 100 to 10,000 parts by mass, 100 to 5,000 parts by mass, 100 to 3,000 parts by mass, 1,000 to 10,000 parts by mass, 1,000 to 5,000 parts by mass, or 1,000 to 3,000 parts by mass.

[0049] (Base and Acid) The slurry according to this embodiment may contain at least one selected from the group consisting of a base and an acid. The base and the acid may be used, for example, to adjust the pH of the slurry. As the base and the acid, compounds other than Compound A may be used. Examples of the base include ammonia, sodium hydroxide, potassium hydroxide, calcium hydroxide, etc. Examples of the acid include nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, boric acid, etc. From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the slurry according to this embodiment may contain a base, and the base may include ammonia.

[0050] The content C1 of the base or the ammonia may be in the following range based on the total mass of the slurry: From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C1 may be 0.0001 mass % or more, 0.0002 mass % or more, 0.0003 mass % or more, 0.0004 mass % or more, 0.0005 mass % or more, 0.0006 mass % or more, 0.0007 mass % or more, or 0.0008 mass % or more. The content C1 may be 0.0200% by mass or less, 0.0150% by mass or less, 0.0100% by mass or less, 0.0050% by mass or less, 0.0020% by mass or less, 0.0015% by mass or less, 0.0012% by mass or less, 0.0010% by mass or less, 0.0009% by mass or less, or 0.0008% by mass or less, from the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, and may be 0.0007% by mass or less, 0.0006% by mass or less, 0.0005% by mass or less, or 0.0004% by mass or less, from the viewpoint of adjusting the polishing rate for silicon oxide or polysilicon. From these viewpoints, the content C1 may be 0.0001 to 0.0200 mass%, 0.0001 to 0.0100 mass%, 0.0001 to 0.0020 mass%, 0.0003 to 0.0200 mass%, 0.0003 to 0.0100 mass%, 0.0003 to 0.0020 mass%, 0.0005 to 0.0200 mass%, 0.0005 to 0.0100 mass%, or 0.0005 to 0.0020 mass%.

[0051] The content C2 of the base or the ammonia may be in the following ranges relative to 100 parts by mass of the abrasive grains: From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C2 may be 0.1 parts by mass or more, 0.3 parts by mass or more, 0.5 parts by mass or more, 0.8 parts by mass or more, 1.0 parts by mass or more, 1.2 parts by mass or more, 1.5 parts by mass or more, or 1.6 parts by mass or more. The content C2 may be 20.0 parts by mass or less, 15.0 parts by mass or less, 10.0 parts by mass or less, 8.0 parts by mass or less, 5.0 parts by mass or less, 3.0 parts by mass or less, 2.0 parts by mass or less, 1.8 parts by mass or less, or 1.6 parts by mass or less, from the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, and may be 1.5 parts by mass or less, 1.0 parts by mass or less, 0.9 parts by mass or less, or 0.8 parts by mass or less, from the viewpoint of adjusting the polishing rate for silicon oxide or polysilicon. From these viewpoints, the content C2 may be 0.1 to 20.0 parts by mass, 0.1 to 5.0 parts by mass, 0.1 to 2.0 parts by mass, 0.5 to 20.0 parts by mass, 0.5 to 5.0 parts by mass, 0.5 to 2.0 parts by mass, 1.0 to 20.0 parts by mass, 1.0 to 5.0 parts by mass, or 1.0 to 2.0 parts by mass.

[0052] The content C3 of the base or the ammonia may be in the following ranges relative to 100 parts by mass of compound A. From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C3 may be 1 part by mass or more, 3 parts by mass or more, 5 parts by mass or more, 8 parts by mass or more, 10 parts by mass or more, 12 parts by mass or more, 15 parts by mass or more, or 16 parts by mass or more. From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C3 may be 200 parts by mass or less, 150 parts by mass or less, 100 parts by mass or less, 80 parts by mass or less, 50 parts by mass or less, 30 parts by mass or less, 20 parts by mass or less, 18 parts by mass or less, or 16 parts by mass or less, and from the viewpoint of adjusting the polishing rate for silicon oxide or polysilicon, the content C3 may be 15 parts by mass or less, 10 parts by mass or less, 9 parts by mass or less, or 8 parts by mass or less. From these viewpoints, the content C3 may be 1 to 200 parts by mass, 1 to 50 parts by mass, 1 to 20 parts by mass, 5 to 200 parts by mass, 5 to 50 parts by mass, 5 to 20 parts by mass, 10 to 200 parts by mass, 10 to 50 parts by mass, or 10 to 20 parts by mass.

[0053] The content C4 of the base or the ammonia may be in the following range relative to 100 parts by mass of the water-soluble polymer: From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C4 may be 0.01 parts by mass or more, 0.05 parts by mass or more, 0.10 parts by mass or more, 0.20 parts by mass or more, 0.30 parts by mass or more, 0.35 parts by mass or more, 0.40 parts by mass or more, 0.50 parts by mass or more, 0.60 parts by mass or more, 0.70 parts by mass or more, or 0.80 parts by mass or more. From the viewpoint of easily obtaining a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the content C4 may be 20.00 parts by mass or less, 10.00 parts by mass or less, 8.00 parts by mass or less, 6.00 parts by mass or less, 5.00 parts by mass or less, 4.00 parts by mass or less, 3.00 parts by mass or less, 2.00 parts by mass or less, 1.50 parts by mass or less, 1.20 parts by mass or less, 1.00 parts by mass or less, 0.90 parts by mass or less, or 0.80 parts by mass or less, and from the viewpoint of adjusting the polishing rate for silicon oxide or polysilicon, it may be 0.70 parts by mass or less, 0.60 parts by mass or less, 0.50 parts by mass or less, or 0.40 parts by mass or less. From these viewpoints, the content C4 may be 0.01 to 20.00 parts by mass, 0.01 to 5.00 parts by mass, 0.01 to 1.00 parts by mass, 0.10 to 20.00 parts by mass, 0.10 to 5.00 parts by mass, 0.10 to 1.00 parts by mass, 0.50 to 20.00 parts by mass, 0.50 to 5.00 parts by mass, or 0.50 to 1.00 parts by mass.

[0054] (Other Additives) The slurry according to this embodiment may contain other additives (abrasive grains, Compound A, water-soluble polymer, pH adjuster, and components other than water). Examples of such additives include organic solvents (ethanol, acetone, etc.) and oxidizing agents (e.g., metal oxidizing agents such as hydrogen peroxide). The slurry according to this embodiment may contain an oxidizing agent, or may be substantially free of an oxidizing agent. The content of the oxidizing agent may be 0.1% by mass or less, 0.01% by mass or less, 0.001% by mass or less, or 0.0001% by mass or less, based on the total mass of the slurry, and may be substantially 0% by mass.

[0055] (Water) The slurry according to this embodiment may contain water. The water is not particularly limited, but may include at least one selected from the group consisting of deionized water, ion-exchanged water, and ultrapure water.

[0056] (pH) The pH (25°C) of the slurry according to this embodiment is 5.0 or higher. The pH of the slurry may be in the following ranges. From the viewpoint of easily achieving a high polishing rate for silicon oxide or easily reducing the polishing rate for polysilicon, the pH may be 5.3 or higher, 5.5 or higher, 5.8 or higher, 6.0 or higher, 6.3 or higher, 6.5 or higher, 6.8 or higher, or 7.0 or higher. From the viewpoint of easily adjusting the polishing rate for silicon oxide or the polishing rate for polysilicon, the pH may be 10.0 or lower, 9.5 or lower, 9.0 or lower, 8.5 or lower, 8.0 or lower, 7.8 or lower, 7.5 or lower, 7.3 or lower, or 7.0 or lower. From these viewpoints, the pH may be 5.0 to 10.0, 5.0 to 9.0, 5.0 to 7.5, 6.0 to 10.0, 6.0 to 9.0, 6.0 to 7.5, 6.5 to 10.0, 6.5 to 9.0, or 6.5 to 7.5. The pH can be measured by the method described in the Examples below.

[0057] (Storage Mode) The slurry according to the present embodiment may be stored as a stock solution with a reduced amount of water compared to that used during polishing. One aspect of the slurry according to the present embodiment may be such a stock solution. The stock solution can be used by diluting it with water before or during polishing.

[0058] The slurry according to this embodiment may be stored as a single-component slurry containing at least abrasive grains and compound A, or as a multi-component slurry (slurry set) containing at least a first liquid and a second liquid. In the multi-component slurry, the components of the slurry may be separated into a first liquid and a second liquid so that at least the first liquid and the second liquid are mixed to form the slurry during polishing. For example, the multi-component slurry may be stored with the components of the above-described slurry separated into at least a first liquid and a second liquid, with the first liquid containing abrasive grains and the second liquid containing compound A. Additives other than compound A (such as water-soluble polymers) may be contained in either the first liquid or the second liquid. The components of the slurry may be separated into three or more liquids for storage. The first liquid and the second liquid in the multi-component slurry may be mixed before or during polishing. The first and second liquids in the multi-liquid slurry may be supplied onto a polishing platen, respectively, and mixed on the polishing platen. The liquids constituting the multi-liquid slurry (the first liquid, the second liquid, etc.) may be stored as stock liquids with a reduced amount of water compared to that used during polishing, and may be used by diluting with water before or during polishing.

[0059] <Polishing Method> The polishing method according to this embodiment includes a polishing step of polishing a member to be polished using the slurry according to this embodiment. The member to be polished may contain at least one selected from the group consisting of silicon oxide and polysilicon, or may contain silicon oxide or polysilicon. The shape of the member to be polished is not particularly limited, and may be, for example, a film. In the polishing step, the surface to be polished of the member to be polished may be polished, and the surface to be polished may contain at least one selected from the group consisting of silicon oxide and polysilicon. In the polishing step, at least a portion of the member to be polished may be polished and removed. The slurry used in the polishing step (the slurry according to this embodiment) may be the above-mentioned one-component slurry, a slurry obtained by diluting the above-mentioned stock solution with water, or a slurry obtained by mixing at least the first and second components of the above-mentioned multi-component slurry. The member to be polished is not particularly limited, and may be a wafer (e.g., a semiconductor wafer) or a chip (e.g., a semiconductor chip). The member to be polished may be a wiring board or a circuit board.

[0060] <Component Manufacturing Method, etc.> The component manufacturing method according to this embodiment includes a component fabrication step in which a component is obtained using a polished member (substrate) polished by the polishing method according to this embodiment. The component according to this embodiment is a component obtained by the component manufacturing method according to this embodiment. The component according to this embodiment is not particularly limited, and may be an electronic component (e.g., a semiconductor component such as a semiconductor package), a wafer (e.g., a semiconductor wafer), or a chip (e.g., a semiconductor chip). As one aspect of the component manufacturing method according to this embodiment, an electronic component is obtained using a polished member polished by the polishing method according to this embodiment. As one aspect of the component manufacturing method according to this embodiment, a semiconductor component (e.g., a semiconductor package) is obtained using a polished member polished by the polishing method according to this embodiment. The component manufacturing method according to this embodiment may include a polishing step in which a polished member is polished by the polishing method according to this embodiment before the component fabrication step.

[0061] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a singulation step of singulating a polished member (substrate) polished by the polishing method according to this embodiment. The singulation step may be, for example, a step of dicing a wafer (e.g., a semiconductor wafer) polished by the polishing method according to this embodiment to obtain chips (e.g., semiconductor chips). As one aspect of the component manufacturing method according to this embodiment, the electronic component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain electronic components (e.g., semiconductor components). As one aspect of the component manufacturing method according to this embodiment, the semiconductor component manufacturing method according to this embodiment may include a step of singulating a polished member polished by the polishing method according to this embodiment to obtain semiconductor components (e.g., semiconductor packages).

[0062] The component manufacturing method according to this embodiment may include, as one aspect of the component manufacturing process, a connection process for connecting (e.g., electrically connecting) a polished member (substrate) polished by the polishing method according to this embodiment to another connected object. The connected object to be connected to the polished member polished by the polishing method according to this embodiment is not particularly limited and may be the polished member polished by the polishing method according to this embodiment, or may be a connected object different from the polished member polished by the polishing method according to this embodiment. In the connection process, the polished member and the connected object may be directly connected (connected in a state where the polished member and the connected object are in contact), or the polished member and the connected object may be connected via another member (such as a conductive member). The connection process may be performed before the singulation process, after the singulation process, or before or after the singulation process.

[0063] The connecting step may be a step of connecting a polished surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connected body, or a step of connecting a connecting surface of a member to be polished that has been polished by the polishing method according to this embodiment to a connecting surface of a connected body. The connecting surface of the member to be polished may be a polished surface polished by the polishing method according to this embodiment. The connecting step can obtain a connected body comprising a member to be polished and a connected body. In the connecting step, if the connecting surface of the member to be polished has a metal portion, the connected body may be brought into contact with the metal portion. In the connecting step, if the connecting surface of the member to be polished has a metal portion and the connecting surface of the connected body has a metal portion, the metal portions may be brought into contact with each other. The metal portion may contain copper.

[0064] The device according to this embodiment (for example, an electronic device such as a semiconductor device) includes at least one member selected from the group consisting of a polished member polished by the polishing method according to this embodiment and a part according to this embodiment.

[0065] The present disclosure will be described in more detail below with reference to examples, but the present disclosure is not limited to these examples.

[0066] <Preparation of Cerium Hydroxide Slurry> First, 7603 g of water was placed in a container. Next, a 50% by mass aqueous solution of cerium ammonium nitrate (Ce(NH ４ ) ２ (NO ３ ) ６ 1037 g of a metal salt solution (trade name: 50% CAN solution, formula weight 548.2 g / mol, manufactured by Nippon Chemical Industry Co., Ltd.) was added and mixed, and the liquid temperature was adjusted to 40° C. to obtain an aqueous metal salt solution.

[0067] Next, imidazole was dissolved in water to obtain 4566 g of an aqueous solution with a concentration of 0.7 mol / L, and the liquid temperature was then adjusted to 20 to 25° C. to obtain an alkaline solution.

[0068] The container containing the metal salt aqueous solution was placed in a water tank filled with water, and the water temperature of the water tank was adjusted to 40°C using an external circulation device, Coolnix Circulator (manufactured by Tokyo Rikakikai Co., Ltd. (EYELA), product name: Cooling Thermo Pump CTP101). While the water temperature of the metal salt aqueous solution was maintained at 40°C, it was stirred at a stirring speed of 400 min using a three-blade pitch paddle with a blade length of 5 cm. －１ While stirring the metal salt aqueous solution, 0.0000085 ml of the above alkaline solution was added. ３ The slurry precursor 1 (pH: 2.2) containing abrasive grains containing cerium hydroxide was obtained by adding the slurry precursor 1 to the container at a mixing rate of 8.5 mL / min (8.5 mL / min).

[0069] Using a hollow fiber filter with a molecular weight cutoff of 50,000, the above-mentioned slurry precursor 1 was ultrafiltered while circulating to obtain slurry precursor 2. During ultrafiltration, ions were removed until the conductivity reached 50 mS / m or less. Ultrafiltration was performed while adding water to maintain a constant water level in the tank containing slurry precursor 1 using a liquid level sensor. Water was added to slurry precursor 2 to adjust the abrasive grain content to 1.0 mass %, thereby obtaining a cerium hydroxide slurry.

[0070] <Preparation of Polishing Slurry> For the polishing slurries of Examples 1 to 9 and Comparative Examples 1 to 3, slurries were prepared by mixing the above-mentioned cerium hydroxide slurry, the additives listed in Table 1, polyglycerin (manufactured by Sakamoto Yakuhin Kogyo Co., Ltd., trade name "Polyglycerin #750", weight average molecular weight: 758.0), ammonia, and water. For the polishing slurry of Comparative Example 4, a slurry was prepared in the same manner as in Example 6, except that ammonia was not added. The content of each component in each polishing slurry (based on the total mass of the polishing slurry) was: abrasive grain content 0.05% by mass, additive content listed in Table 1 0.005% by mass, polyglycerin content 0.1% by mass, and ammonia content 0.0008% by mass (Examples except Example 7 and Comparative Examples except Comparative Example 4), 0.0004% by mass (Example 7), or 0% by mass (Comparative Example 4). The AlogP of the additives listed in Table 1 is shown in Table 1. The AlogP of the additives in Table 1 was calculated using a calculation method that takes into account the molecular structure, properties, etc.

[0071] <Measurement of particle size of abrasive grains> The average particle size (D50) of the abrasive grains in the above-mentioned polishing slurry was measured under the following conditions. In each of the examples and comparative examples, the average particle size of the abrasive grains was 10 nm. Measurement temperature: 25°C Measurement device: Wyatt Technology, product name "Mobius" Measurement method: Approximately 4 mL of the polishing slurry was placed in a 1 cm square cell, and the cell was then placed in the measurement device. Measurement was performed under the conditions of a laser wavelength of 532 nm, a measurement temperature of 25°C, a measurement angle of 163.5°, and an accumulation number of 10 times. The D50 value of the particle size distribution calculated from the scattering intensity converted into mass of the measurement results was obtained as the average particle size.

[0072] <Zeta Potential Measurement> An appropriate amount of polishing slurry was placed in a Delsa Nano C polishing polisher manufactured by Beckman Coulter, Inc., and measurements were performed twice at 25°C. The average value of the displayed zeta potentials was obtained as the zeta potential. In each of the Examples and Comparative Examples, the zeta potential of the abrasive grains was positive.

[0073] <pH Measurement> The pH of the above-mentioned polishing slurry was measured under the following conditions. The results are shown in Table 1. Measurement temperature: 25°C Measuring device: HORIBA, Ltd., product name "Model (D-71)" Measurement method: After three-point calibration of the pH meter using a phthalate pH standard solution (pH: 4.01), a neutral phosphate pH standard solution (pH: 6.86), and a borate pH standard solution (pH: 9.18) as pH standard solutions, the pH meter electrode was placed in the slurry, and the pH was measured using the above-mentioned measuring device after 2 minutes or more had passed and the pH had stabilized.

[0074] <Polishing Characteristics> The polishing characteristics of the above-mentioned polishing slurry were evaluated according to the following procedure.

[0075] As a blanket wafer, a silicon oxide film (SiO ２ A φ300 mm wafer having a silicon dioxide film on its surface and a φ300 mm wafer having a polysilicon film on its surface were prepared.

[0076] The above-mentioned wafer was polished under the following polishing conditions: Polishing apparatus: Reflexion (manufactured by Applied Materials, Inc.) Slurry flow rate: 200 mL / min Polishing pad: polyurethane foam resin having closed cells (manufactured by Rohm and Haas Japan Co., Ltd., model number: IC1000) Polishing pressure: 14.7 kPa (2 psi) Platen rotation speed: 53 rpm Head rotation speed: 50 rpm Polishing time: 30 seconds Cleaning: The polished wafer was washed with water and then dried with a spin dryer.

[0077] Using an optical interference film thickness measurement device (device name: NOVA i500) manufactured by Nova Measuring Instruments, the film thickness of the polished film (silicon oxide film and polysilicon film) on the above-mentioned wafer was measured at 65 points before and after polishing. The 65 film thickness measurements were performed on a line including the center of the wafer, with the center of the wafer as the reference, at positions of 149 mm, 148 mm, 147 mm, and 145 mm, positions every 5 mm between 145 mm and -145 mm (140 mm, 135 mm, ..., -135 mm, -140 mm), and positions of -145 mm, -147 mm, -148 mm, and -149 mm (distances on the opposite side of the wafer center from a positive distance are expressed as negative). The change in film thickness was calculated using the average film thickness value of the 65 points. The polishing rates (polishing rate for silicon oxide and polishing rate for polysilicon) were calculated based on the change in film thickness and the polishing time. The results are shown in Table 1.

[0078]

Claims

1. A slurry comprising abrasive grains and a compound A containing at least one element selected from the group consisting of nitrogen atoms and phosphorus atoms, wherein the compound A has an octanol / water partition coefficient AlogP of 2.00 or more, and a pH of 5.0 or more.

2. The slurry of claim 1, wherein the octanol / water partition coefficient A log P of compound A is 10.00 or less.

3. The slurry of claim 1, wherein the octanol / water partition coefficient A log P of compound A is 5.00 or less.

4. The slurry of claim 1, wherein said compound A comprises an amine.

5. The slurry of claim 1, wherein compound A comprises an amine having a nitrogen-containing six-membered ring.

6. The slurry of claim 1, wherein said compound A comprises an amine salt.

7. The slurry of claim 1, wherein said compound A comprises an acid addition salt of an alkylenediamine.

8. The slurry of claim 1, wherein said compound A comprises a quaternary ammonium compound.

9. The slurry of claim 1, wherein said compound A comprises a tetraalkylammonium salt.

10. The slurry of claim 1, wherein said compound A comprises an aryltrialkylammonium salt.

11. The slurry of claim 1, wherein compound A comprises a quaternary phosphonium compound.

12. The slurry of claim 1, wherein said compound A comprises a tetraalkylphosphonium salt.

13. The slurry of claim 1, wherein said compound A comprises a pyridinium salt.

14. The slurry according to claim 1, wherein the content of compound A is 0.0010 to 0.0100% by mass based on the total mass of the slurry.

15. The slurry of claim 1, wherein the abrasive grains comprise cerium-based particles.

16. The slurry of claim 1, wherein the abrasive grains have an average particle size of 15.0 nm or less.

17. The slurry of claim 1, wherein the pH is 8.0 or less.

18. A polishing method comprising a step of polishing a workpiece with the slurry according to any one of claims 1 to 17.

19. The polishing method according to claim 18, wherein the member to be polished contains at least one material selected from the group consisting of silicon oxide and polysilicon.

Images