Unidirectional write magnetoelectric coupled magnetic memory, manufacturing method, and array connection circuit of magnetic memory

Abstract

The present disclosure provides a unidirectional write magnetoelectric coupled magnetic memory, comprising: a spin-orbit coupling layer; a magnetoelectric coupling layer unit, comprising a first magnetoelectric coupling layer and a second magnetoelectric coupling layer which are symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively; a free layer unit, comprising a first free layer and a second free layer which are symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively; a barrier layer unit, comprising a first barrier layer and a second barrier layer which are symmetrically formed outside the first free layer and the second free layer, respectively; a reference layer unit, comprising a first reference layer and a second reference layer which are symmetrically formed outside the first barrier layer and the second barrier layer, respectively; a pinning layer unit, comprising a first pinning layer and a second pinning layer which are symmetrically formed outside the first reference layer and the second reference layer, respectively; a top electrode unit; a read electrode unit; and a write electrode unit. Further provided are a manufacturing method for the magnetic memory and an array connection circuit of the magnetic memory.

Description

Unidirectional write magnetoelectric coupled magnetic memory, its fabrication method and array connection circuit. Technical Field

[0001] This disclosure relates to the field of magnetic storage technology, and in particular to a unidirectional write magnetoelectric coupled magnetic memory, a preparation method thereof, and an array connection circuit for the magnetic memory. Background Technology

[0002] Magnetic memory, as a novel type of memory, boasts advantages such as high speed, high stability, and high durability. However, the switching process of a magnetic tunnel junction (MTJ) requires bipolar current, leading to significant write asymmetry due to transistor source degradation. For example, existing SOT-MRAM technology has undergone numerous improvements and refinements to address high-efficiency switching. Patent (US11264562) discloses a technique for switching a free-layer MTJ (magnetic tunnel junction) using magnetoelectric coupling, employing voltage to flip the polarity of the multiferroic layer to drive the free layer's switching. However, when the device is connected in series with an insulating multiferroic layer, normal resistance reading is impossible. Patent (US11600659) discloses a piezoelectrically modulated free-layer barrier MTJ technique. However, strain transfer is limited, difficult to transfer through metal layers, and requires additional electrodes, hindering integration. Patent (US20240023347) discloses an MTJ technique using a common spin-orbit coupling layer. However, STT gating results in device durability loss, and the device requires bipolar writing. Patent (CN115802871) discloses a magnetoelectric coupling gating MTJ technology with low power consumption, but the device requires bipolar writing and cannot read the resistance value normally.

[0003] Public content

[0004] In view of this, it is necessary to study a unidirectional write magnetoelectric coupled magnetic memory, its fabrication method, and an array connection circuit for the magnetic memory, so as to at least partially solve at least one of the aforementioned technical problems, improve the reliability of the device, and at the same time take into account the read margin of the magnetic memory and the development needs of high density and high energy efficiency.

[0005] To achieve the above objectives, the technical solution disclosed herein is as follows:

[0006] According to one aspect of this disclosure, a unidirectional write magnetoelectric coupled magnetic memory is provided, comprising: a spin-orbit coupling layer; a magnetoelectric coupling layer unit, including a first magnetoelectric coupling layer and a second magnetoelectric coupling layer symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively; a free layer unit, including a first free layer and a second free layer symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively; a barrier layer unit, including a first barrier layer and a second barrier layer symmetrically formed outside the first free layer and the second free layer, respectively; a reference layer unit, including a first reference layer and a second reference layer symmetrically formed outside the first barrier layer and the second barrier layer, respectively; a pinning layer unit, including a first pinning layer and a second pinning layer symmetrically formed outside the first reference layer and the second reference layer, respectively; a top electrode unit, including a top electrode formed outside the first pinning layer and the second pinning layer, respectively; a read electrode unit, including read electrodes formed at both ends of the first free layer and the second free layer, respectively; and a write electrode unit, including write electrodes formed at both ends of the spin-orbit coupling layer, respectively.

[0007] According to embodiments of this disclosure, the barrier layer unit, reference layer unit, pinning layer unit, and top electrode unit are all segmented to form multiple MTJ units.

[0008] According to embodiments of this disclosure, the thickness of the spin orbital layer is 1-20 nm, and the preparation material is selected from Pt, Ta, W, IrMn, FeMn, PtMn, PdMn, CuOx, TiOx, BiSe, Bi 0.9 Sb 0.1 , (Bi,Sb)2Te3, SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3, SrIrO3, MoTe2, PtSe2, PtTe2, WTe2;

[0009] The thickness of the first magnetoelectric coupling layer and the second magnetoelectric coupling layer is 2-100 nm, and the materials used for preparation are selected from BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, and BaSrMnO3.

[0010] Both the free layer unit and the reference layer unit have perpendicular magnetic anisotropy, and the thickness of each layer is 0.5-10 nm; the materials used for preparation are selected from CoFeB, CoFe, Co / Pt, CoFeAl, and Co / Pd.

[0011] The thickness of the first and second barrier layers is 0.5-3 nm, and the materials used for preparation are selected from MgO, Al2O3, and MgAlO.

[0012] The thickness of the first and second pinning layers is 1-10 nm, and they have strong perpendicular magnetic anisotropy. The materials used for preparation are selected from Co / Pt, CoFeB, CoFe, CoFeAl, Co / Pd, IrMn, FeMn, and PtMn.

[0013] The thickness of the top electrode unit, read electrode unit, and write electrode unit is 2-200 nm, and the materials used for preparation are selected from Ru, Ta, Ti, Cr, Pt, Au, CuN, and TiN.

[0014] According to the embodiments of this disclosure, the polarity of the local magnetoelectric coupling layer unit can be reversed by the voltage control of the MTJ unit, and the direction of the exchange bias field can be modulated to achieve unidirectional writing; the spin current generated by the spin-orbit coupling layer can be transmitted to the free layer unit through the magnon in the magnetoelectric coupling layer unit.

[0015] According to an embodiment of this disclosure, the polarization direction of the magnetoelectric coupling layer unit is reversed by applying a voltage between the top electrode and the write electrode, while simultaneously changing the direction of the exchange bias field.

[0016] According to embodiments of this disclosure, a magnetic memory can be written to a resistive state in one step using a unidirectional current through a spin-orbit coupling layer.

[0017] According to embodiments of this disclosure, the magnetic memory uses a shared free layer cell to achieve normal reading of the MTJ resistive state.

[0018] According to embodiments of this disclosure, during reading, a small current can be applied between the top electrode corresponding to the MTJ unit and the read electrodes at both ends of the free layer unit to read the data through the TMR effect.

[0019] In another aspect of this disclosure, a method for fabricating a magnetic memory as described in any one of the preceding claims is provided, comprising: magnetron sputtering deposition of a film stack on a pre-designed interconnected wafer, comprising: a metal, a second pinning layer, a second reference layer, and a second barrier layer; ion beam / reactive ion beam etching of a columnar structure and magnetron sputtering deposition of an insulating material for isolation; ion beam / reactive ion beam etching of a grooved structure and magnetron sputtering / electron beam evaporation of a metal electrode; magnetron sputtering deposition of a second free layer, a second magnetoelectric coupling layer, a spin-orbit coupling layer, a first magnetoelectric coupling layer, a first free layer, a first barrier layer, a first reference layer, a first pinning layer, and a metal electrode; ion beam / reactive ion beam etching of the columnar structure and magnetron sputtering deposition of an insulating material for isolation; ion beam / reactive ion beam etching of a via structure and magnetron sputtering / electron beam evaporation of a metal electrode; ion beam / reactive ion beam etching of the via structure and magnetron sputtering deposition of an insulating material for isolation; ion beam / reactive ion beam etching of the via structure and magnetron sputtering / electron beam evaporation of a metal electrode.

[0020] Another aspect of this disclosure provides an array connection circuit for a magnetic memory, comprising: the magnetic memory described above; a write control transistor, a read control transistor; and word lines, write word lines, read word lines, bit lines, write bit lines, and source lines.

[0021] According to embodiments of this disclosure, the exchange bias field of the MTJ cell can be modulated through the magnetoelectric coupling layer to achieve unipolar writing. Furthermore, the symmetrical multiplexing spin-orbit coupling layer can significantly increase the storage density of the device. Through the above technical solutions, this disclosure achieves the following technical effects:

[0022] First, a magnetoelectric coupling layer is deposited between the spin-orbit coupling layer and the free layer. The polarity of the local magnetoelectric coupling layer can be reversed by voltage control of the MTJ cell, modulating the direction of the exchange bias field and enabling unidirectional writing. The spin current generated by the spin-orbit coupling layer can be transferred to the free layer through magnons in the magnetoelectric coupling layer. Second, multiple MTJ cells are symmetrically fabricated to increase storage density. Third, a shared free layer allows for normal reading of the MTJ cell resistance. Attached Figure Description

[0023] The above and other objects, features and advantages of this disclosure will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0024] Figure 1 schematically illustrates the structure of a unidirectional write magnetoelectric coupled magnetic memory according to an embodiment of the present disclosure;

[0025] Figure 2 schematically illustrates the operational principle of a unidirectional write magnetoelectric coupled magnetic memory according to an embodiment of the present disclosure;

[0026] Figures 3a-3j schematically illustrate the fabrication process flow of the unidirectional write magnetoelectric coupled magnetic memory according to an embodiment of the present disclosure;

[0027] Figure 4 schematically illustrates the connection circuit structure of a unidirectional write magnetoelectric coupled magnetic memory array according to an embodiment of the present disclosure. Detailed Implementation

[0028] This disclosure provides a unidirectional write magnetoelectric coupled magnetic memory, a fabrication method, and an array connection circuit for the magnetic memory. This magnetic memory can achieve unidirectional current writing, higher storage density, and high energy efficiency.

[0029] To make the objectives, technical solutions, and advantages of this disclosure clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0030] In this embodiment of the disclosure, a unidirectional write magnetoelectric coupled magnetic memory is provided. As shown in Figures 1 and 2, the unidirectional write magnetoelectric coupled magnetic memory includes:

[0031] Spin-Orbit Coupling (SOC) refers to the interaction and coupling between spin and orbital angular momentum.

[0032] The magnetoelectric coupling layer unit includes a first magnetoelectric coupling layer (MEC1) and a second magnetoelectric coupling layer (MEC2) symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively.

[0033] The free layer unit includes a first free layer (FL1) and a second free layer (FL2) symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively.

[0034] The barrier layer unit includes a first barrier layer (BL1) symmetrically formed outside the first free layer and a second barrier layer (BL2) outside the second free layer;

[0035] The reference layer unit includes a first reference layer (RL1) and a second reference layer (RL2) symmetrically formed outside the first barrier layer and the second barrier layer, respectively.

[0036] The pinning layer unit includes a first pinning layer (PL1) symmetrically formed outside the first reference layer and a second pinning layer (PL2) outside the second reference layer;

[0037] The top electrode unit includes a top electrode M1 formed outside the first pinning layer and a top electrode (M2) formed outside the second pinning layer.

[0038] The read electrode unit includes read electrodes (R1) formed at both ends of the first free layer and read electrodes (R2) formed at both ends of the second free layer; and

[0039] The write electrode unit includes write electrodes (W) formed at both ends of the spin-orbit coupling layer.

[0040] According to the embodiments of this disclosure, the barrier layer unit, reference layer unit, pinning layer unit, and top electrode unit are all segmented and spaced apart by a set distance, so that they form multiple MTJ units with the corresponding spin-orbit coupling layer, magnetoelectric coupling layer unit, and free layer unit below them, respectively.

[0041] According to the embodiments of this disclosure, the polarity of the local magnetoelectric coupling layer unit can be reversed by the voltage control of the MTJ unit, and the direction of the exchange bias field can be modulated to achieve unidirectional writing; the spin current generated by the spin-orbit coupling layer can be transmitted to the free layer unit through the magnon in the magnetoelectric coupling layer unit.

[0042] According to an embodiment of this disclosure, the polarization direction of the magnetoelectric coupling layer unit is reversed by applying a voltage between the top electrode and the write electrode, while simultaneously changing the direction of the exchange bias field.

[0043] According to embodiments of this disclosure, a magnetic memory can be written to a resistive state in one step using a unidirectional current through a spin-orbit coupling layer.

[0044] According to embodiments of this disclosure, the magnetic memory uses a shared free layer cell to achieve normal reading of the MTJ resistive state.

[0045] According to an embodiment of this disclosure, as shown in part a of FIG2, during the gating operation, when a voltage is applied between the top electrode (M) on any selected MTJ unit and the electrode (M) of the spin-orbit coupling layer (SOC), the magnetoelectric coupling layer (MF) can be switched to a specified polarization state (as shown by P and the double arrows in FIG2, representing that the polarization state can be switched in the two arrow directions due to different polarities of the applied voltage), and a corresponding exchange bias field (H) is generated. EB The current (J) acts on the free layer (FL), breaking the symmetry of the free layer flipping; as shown in part b of Figure 2, when a current (J) is applied to the spin-orbit coupling layer (SOC), it disrupts the symmetry of the free layer flipping; e The long dashed arrow indicates the direction along the x-axis, representing the generated spin flow (denoted by J in the figure). s The upward arrow indicates that the spin current is along the y-axis, and the multiple dotted arrows in the SOC layer indicate the spin current polarization direction along the xy plane. This spin current is injected into the magnetoelectric coupling layer and transmitted through the magnon (represented by J in the figure). m The wavy lines and arrows represent the magnon and the direction of transmission, which are transmitted to the free layer in the form of a spin orbital moment (SOT). This SOT is then transmitted according to the exchange bias field (H in the diagram). EB The arrows indicate the direction of the exchange bias field, and the three arrows represent the magnetic moment reversal process. It can be seen that the reversal direction of the free layer (FL) can be changed by changing the direction of the exchange bias field, thus achieving unidirectional current writing. As shown in part c of Figure 2, during reading, a small current (generally less than 50 microamps) can be applied between the top electrode on the MTJ cell and the electrodes at both ends of the free layer cell, and the reading is performed through TMR (tunneling magnetoresistance).

[0046] This disclosure also provides a method for fabricating the magnetic storage device according to any one of the above claims. Referring to Figures 3a-3j, the method includes:

[0047] S1: A film stack is deposited by magnetron sputtering on a pre-designed interconnected wafer, including: a metal electrode layer (second top electrode M2), a second pinning layer (PL2), a second reference layer (RL2), and a second barrier layer (BL2), as shown in Figure 3a;

[0048] S2: The columnar structure is etched by ion beam / reactive ion beam and isolated by magnetron sputtering deposition of insulating material (Oxide), as shown in Figures 3b-3c;

[0049] S3: Ion beam / reactive ion beam etching of the groove structure, and magnetron sputtering / electron beam evaporation of the metal electrode (read electrode R2), as shown in Figures 3d-3e;

[0050] S4: Magnetron sputtering deposition of a second free layer (FL2), a second magnetoelectric coupling layer (MF2), a spin-orbit coupling layer (SOC), a first magnetoelectric coupling layer (MF1), a first free layer (FL1), a first barrier layer (BL1), a first reference layer (RL1), a first pinning layer (PL1), and a metal electrode layer (first top electrode M1), as shown in Figure 3f;

[0051] S5: Ion beam / reactive ion beam etching of columnar structure, followed by magnetron sputtering deposition of insulating material for isolation, as shown in Figure 3g;

[0052] S6: Ion beam / reactive ion beam etching of the via structure, and magnetron sputtering / electron beam evaporation of the metal electrode layer (read electrode R1), as shown in Figure 3h;

[0053] S7: Ion beam / reactive ion beam etched through-hole structure and magnetron sputtering deposited insulating material for isolation, as shown in Figure 3i;

[0054] S8: Ion beam / reactive ion beam etching of the via structure, and magnetron sputtering / electron beam evaporation of the metal electrode (write electrode W), as shown in Figure 3j.

[0055] In this embodiment of the present disclosure, as shown in FIG4, an array interconnect structure for the above-described magnetic memory is also provided. It includes the magnetic memory device described above, a write control transistor, a read control transistor, word lines, write word lines, read word lines, bit lines, write bit lines, and source lines. As shown in FIG4, WWL1 and WWL2 represent write word lines, RWL1 and RWL2 represent read word lines, WL11, WL12, WL13, WL14, WL21, WL22, WL23, and WL24 represent word lines, BL11, BL12, BL13, BL14, BL21, BL22, BL23, and BL24 represent bit lines, WBL represents write bit lines, and SL represents source lines.

[0056] When performing a gating operation, specify WL and WWL to be high, and specify a positive-to-negative switching voltage between BL and SL; when performing a write operation, WWL1 and WWL2 to be high, WBL to be applied with a write current, and SL to be grounded; when performing a read operation, specify WL and RWL to be high, BL to be applied with a small read current, and SL to be grounded.

[0057] According to embodiments of this disclosure, the material for preparing the spin-orbit coupling layer can be arbitrarily selected from the following materials or combinations: heavy metals Pt, Ta, W and their alloys; antiferromagnetic IrMn, FeMn, PtMn, PdMn; light metal oxides CuOx, TiOx; topological insulators BiSe, Bi0.9Sb0.1, (Bi,Sb)2Te3; oxide two-dimensional electron gases SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3; and half-metallic materials SrIrO3, MoTe, PtSe, PtTe2, WT. Materials such as e2, with a thickness of 1-20 nm; the materials for the magnetoelectric coupling layer units can be arbitrarily selected from the following materials or combinations: BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, BaSrMnO3, etc., with a thickness of 2-100 nm; the free layer units and reference layer units have perpendicular magnetic anisotropy, and the materials for their preparation can be arbitrarily selected from the following materials or combinations: CoFeB, CoFe, Co / Pt, CoFeAl, Co / Pd, etc., with a thickness of 0.5-10 nm; the materials for the barrier layer units can be arbitrarily selected from the following materials: MgO, Al2O3, MgAlO and their constituent compounds, etc., with a thickness of 0.5-3 nm; the pinning layer unit has strong perpendicular magnetic anisotropy, and the preparation material can be arbitrarily selected from the following materials: Co / Pt multilayer, CoFeB, CoFe, CoFeAl, Co / Pd, antiferromagnetic IrMn, FeMn, PtMn and their composite materials, with a thickness of 1-10 nm; the preparation materials of the top electrode unit, read electrode unit and write electrode unit can be arbitrarily selected from the following materials: Ru, Ta, Ti, Cr, Pt, Au, CuN, TiN and their composite materials, with a thickness of 2-200 nm.

[0058] It should be noted that the materials used to prepare each layer can be adjusted, combined, or expanded according to actual circumstances, as long as they conform to the inventive concept of this disclosure and meet practical needs. The specific materials, thicknesses, and working mechanisms of each layer of the magnetoelectric coupled magnetic memory are shown in Table 1 below:

[0059] Table 1

[0060] The embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. It should be noted that implementations not illustrated or described in the drawings or the main text of the specification are forms known to those skilled in the art and are not described in detail. Furthermore, the definitions of the various elements and methods described above are not limited to the specific structures, shapes, or methods mentioned in the embodiments, and those skilled in the art can easily modify or substitute them.

[0061] Based on the above description, those skilled in the art should have a clear understanding of the unidirectional write magnetoelectric coupled magnetic memory, its preparation method, and the array connection circuit of the magnetic memory disclosed herein.

[0062] In summary, this disclosure provides a unidirectional write magnetoelectric coupled magnetic memory, its fabrication method, and an array connection circuit for the magnetic memory. The magnetoelectric coupled magnetic memory includes a spin-orbit coupling layer, magnetoelectric coupling layers deposited on both sides, and MTJ cells deposited on them. Applying a voltage between the top electrode of the MTJ cell and the spin-orbit coupling layer can write the magnetoelectric coupling layer to a specified polarization state, generating a corresponding interface exchange bias field acting on the free layer. When current flows through the spin-orbit coupling layer, the generated efficient spin current propagates to the free layer through a magnon, achieving deterministic flipping without an external field. By changing the polarity of the magnetoelectric coupling layer, the direction of the exchange bias field can be changed, thereby changing the flipping polarity of the free layer and achieving unidirectional writing. By fabricating symmetrical and multi-bit structures, storage density and energy consumption can be further improved, facilitating large-scale integration and application. The novel unidirectional write magnetoelectric coupled magnetic memory disclosed in this disclosure can be widely used in embedded systems, digital signal processing, control systems, communication equipment, etc.

[0063] The specific embodiments described above do not constitute a limitation on the scope of protection of this disclosure. Any other corresponding changes and modifications made based on the technical concept of this disclosure should be included within the scope of protection of the claims of this disclosure.

Claims

1. A unidirectional write magnetoelectric coupled magnetic memory, comprising: Spin-orbit coupling layer; The magnetoelectric coupling layer unit includes a first magnetoelectric coupling layer and a second magnetoelectric coupling layer symmetrically formed on the upper and lower sides of the spin-orbit coupling layer, respectively. The free layer unit includes a first free layer and a second free layer symmetrically formed outside the first magnetoelectric coupling layer and the second magnetoelectric coupling layer, respectively. The barrier layer unit includes a first barrier layer and a second barrier layer symmetrically formed outside the first free layer and the second free layer, respectively. The reference layer unit includes a first reference layer and a second reference layer that are symmetrically formed outside the first barrier layer and the second barrier layer, respectively. The pinning layer unit includes a first pinning layer and a second pinning layer symmetrically formed outside a first reference layer and outside a second reference layer, respectively. The top electrode unit includes top electrodes formed outside the first pinning layer and the second pinning layer, respectively; The read electrode unit includes read electrodes formed at both ends of the first free layer and the second free layer, respectively; as well as The write electrode unit includes write electrodes formed at both ends of the spin-orbit coupling layer.

2. In the magnetic memory according to claim 1, the barrier layer unit, reference layer unit, pinning layer unit, and top electrode unit are all segmented to form multiple MTJ units.

3. The magnetic storage device according to claim 1, wherein: The spin orbital layer has a thickness of 1-20 nm, and the materials used for its preparation are selected from Pt, Ta, W, IrMn, FeMn, PtMn, PdMn, CuOx, TiOx, BiSe, and Bi. 0.9 Sb 0.1 , (Bi,Sb)2Te3, SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3, SrIrO3, MoTe2, PtSe2, PtTe2, WTe2; The thickness of the first magnetoelectric coupling layer and the second magnetoelectric coupling layer is 2-100 nm, and the materials used for preparation are selected from BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, and BaSrMnO3. Both the free layer unit and the reference layer unit have perpendicular magnetic anisotropy, and the thickness of each layer is 0.5-10 nm; the materials used for preparation are selected from CoFeB, CoFe, Co / Pt, CoFeAl, and Co / Pd. The thickness of the first and second barrier layers is 0.5-3 nm, and the materials used for preparation are selected from MgO, Al2O3, and MgAlO. The thickness of the first and second pinning layers is 1-10 nm, and they exhibit strong perpendicular magnetic anisotropy. The materials used in their fabrication are selected from Co / Pt. CoFeB, CoFe, CoFeAl, Co / Pd, IrMn, FeMn, PtMn; The thickness of the top electrode unit, read electrode unit, and write electrode unit is 2-200 nm, and the materials used for preparation are selected from Ru, Ta, Ti, Cr, Pt, Au, CuN, and TiN.

4. The magnetic memory according to any one of claims 1-3, wherein the polarity of the local magnetoelectric coupling layer unit can be reversed by the voltage control of the MTJ unit, and the direction of the exchange bias field can be modulated to achieve unidirectional writing; the spin current generated by the spin-orbit coupling layer can be transmitted to the free layer unit through the magnon in the magnetoelectric coupling layer unit.

5. In the magnetic memory according to claim 4, the polarization direction of the magnetoelectric coupling layer unit is reversed by applying a voltage between the top electrode and the write electrode, while simultaneously changing the direction of the exchange bias field.

6. The magnetic memory according to claim 1 can be written to the resistive state in one step by a unidirectional current through the spin-orbit coupling layer.

7. The magnetic storage device according to claim 1, wherein the common free layer cell enables normal reading of the MTJ resistive state.

8. The magnetic memory according to claim 7, during reading, a small current can be applied between the top electrode corresponding to the MTJ cell and the read electrodes at both ends of the free layer cell to read the data through the TMR effect.

9. A method for manufacturing a magnetic storage device according to any one of claims 1-8, comprising: A film stack is deposited by magnetron sputtering on a wafer with well-designed interconnects, including: a metal, a second pinning layer, a second reference layer, and a second barrier layer; Ion beam / reactive ion beam etching of columnar structures, followed by magnetron sputtering deposition of insulating material for isolation; Ion beam / reactive ion beam etching of groove-shaped structures, followed by magnetron sputtering / electron beam evaporation of metal electrodes; The magnetron sputtering deposition process includes a second free layer, a second magnetoelectric coupling layer, a spin-orbit coupling layer, a first magnetoelectric coupling layer, a first free layer, a first barrier layer, a first reference layer, a first pinning layer, and a metal electrode. Ion beam / reactive ion beam etching of columnar structures, followed by magnetron sputtering deposition of insulating material for isolation; Ion beam / reactive ion beam etching of via structures, followed by magnetron sputtering / electron beam evaporation of metal electrodes; Ion beam / reactive ion beam etching of through-hole structures, followed by magnetron sputtering deposition of insulating material for isolation; Ion beam / reactive ion beam etching of through-hole structures, and magnetron sputtering / electron beam evaporation of metal electrodes.

10. An array connection circuit for a magnetic storage device, comprising: The magnetic storage device according to any one of claims 1-8; Write control transistor, read control transistor; as well as Character line, writing line, reading line, position line, writing position line, source line.

Images