Monocrystalline silicon with controllable oxygen content, silicon wafer with controllable oxygen content, and monocrystalline silicon growth method and system

Abstract

Monocrystalline silicon with a controllable oxygen content, a silicon wafer with a controllable oxygen content, and a monocrystalline silicon growth method and system. The method comprises: during a growth process of monocrystalline silicon, acquiring an actual heating duration of a quartz crucible; on the basis of a difference range in which the difference between the actual heating duration and a target heating duration is located, determining a control parameter set and configuration parameter values thereof, wherein the control parameter set comprises a crystal rotation speed and / or a crucible rotation speed, and different difference ranges correspond to different control parameter sets; and on the basis of the configuration parameter values of the control parameter set, automatically configuring corresponding control parameters, such that an oxygen content deviation between the oxygen content of the monocrystalline silicon and a target oxygen content is -10% to 10%.

Description

Oxygen-content controllable monocrystalline silicon and silicon wafers, monocrystalline silicon growth methods and systems

[0001] Cross-reference to related applications

[0002] This disclosure claims priority to Chinese Patent Application No. 202411201430.X, filed in China on August 29, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This application relates to the field of silicon wafer manufacturing technology, and in particular to monocrystalline silicon and silicon wafers with controllable oxygen content, as well as methods and systems for growing monocrystalline silicon. Background Technology

[0004] In the semiconductor manufacturing field, the production of single-crystal silicon is fundamental to the fabrication of high-performance electronic devices. Single-crystal silicon growth technology, especially the technology of growing single-crystal silicon through Czochralski methods (such as the Kochralski method), is a crucial step in semiconductor production.

[0005] Generally, the oxygen content is higher at the beginning of a monocrystalline silicon crystal and lower at the end. This phenomenon is likely due to the decreasing contact area between the quartz crucible and the molten silicon as the crystal grows, changes in the thermal environment around the furnace, and variations in the flow of the molten silicon. These three factors collectively cause changes in the amount of oxygen entering the melt. During the growth of monocrystalline silicon, abnormal crystal growth leading to remelting and excessively long heating times can affect the oxygen content, failing to meet customer needs and product specifications, resulting in reduced production capacity and yield losses.

[0006] Based on this, this application provides oxygen-content controllable monocrystalline silicon and silicon wafers, monocrystalline silicon growth methods and systems to improve related technologies. Summary of the Invention

[0007] The purpose of this application is to provide a single crystal silicon and silicon wafer with controllable oxygen content, a single crystal silicon growth method and system, which can monitor the actual heating time of the quartz crucible and adjust the control parameter set and its configuration parameter values ​​accordingly to control the distribution of oxygen in the single crystal silicon.

[0008] The objective of this application is achieved through the following technical solution:

[0009] In a first aspect, this application provides a method for growing single-crystal silicon, the method comprising:

[0010] During the growth of single-crystal silicon, the actual heating time of the quartz crucible is obtained;

[0011] Based on the range of the difference between the actual heating time and the target heating time, a set of control parameters and their configuration parameter values ​​are determined; the set of control parameters includes crystal rotation speed and / or crucible rotation speed, and different control parameter sets correspond to different ranges of difference.

[0012] Based on the configuration parameter values ​​of the control parameter set, the corresponding control parameters are automatically configured so that the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%.

[0013] In some embodiments, the process of determining the control parameter set includes:

[0014] When the difference range is within the first type of difference range, the crystal rotation speed is used as the control parameter in the control parameter set.

[0015] When the difference falls within the second type of difference range, the crystal rotation speed and crucible rotation speed are used as control parameters in the control parameter set; the minimum value of the second type of difference range is not less than the maximum value of the first type of difference range.

[0016] In some embodiments, the process of determining the configuration parameter values ​​of the control parameter set includes:

[0017] For each control parameter, perform the following processing:

[0018] Based on the range of the difference, the correspondence between the configuration parameter value and the target parameter value of the control parameter is determined; different ranges of difference correspond to different correspondences.

[0019] The configuration parameter value of the control parameter is calculated based on the target parameter value of the control parameter and the corresponding relationship.

[0020] In some embodiments, the correspondence is represented by a correspondence formula or a correspondence model.

[0021] In some embodiments, the correspondence is expressed by a correspondence formula, and one or more compensation coefficients in the correspondence formula are determined according to the range of the difference.

[0022] In some embodiments, the target parameter value of the control parameter is determined based on the length range of the monocrystalline silicon.

[0023] In some embodiments, the method further includes:

[0024] Based on the length range of the monocrystalline silicon, the growth process of the monocrystalline silicon is divided into multiple growth stages;

[0025] During each growth stage, the oxygen content of the monocrystalline silicon is tested, and the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is calculated.

[0026] Secondly, this application provides a single-crystal silicon growth system, comprising:

[0027] The control module is used to execute any of the above methods;

[0028] The heating module is used to heat the quartz crucible containing the raw materials;

[0029] Crystal rotation module for rotating single-crystal silicon;

[0030] A crucible rotation module is used to rotate the quartz crucible.

[0031] In some embodiments, the control module includes:

[0032] The data processing unit is used to acquire the actual heating time of the quartz crucible during the growth of single-crystal silicon; and to determine the control parameter set and its configuration parameter values ​​based on the difference range between the actual heating time and the target heating time; the control parameter set includes the crystal rotation speed of the crystal rotation module and / or the crucible rotation speed of the crucible rotation module, and different control parameter sets correspond to different difference ranges;

[0033] The system control unit is used to automatically configure the corresponding control parameters based on the configuration parameter values ​​of the control parameter set, so that the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%.

[0034] In some embodiments, the data processing unit determines the control parameter set in the following manner:

[0035] When the difference range is within the first type of difference range, the crystal rotation speed is used as the control parameter in the control parameter set.

[0036] When the difference falls within the second type of difference range, the crystal rotation speed and crucible rotation speed are used as control parameters in the control parameter set; the minimum value of the second type of difference range is not less than the maximum value of the first type of difference range.

[0037] Thirdly, this application also provides a monocrystalline silicon with controllable oxygen content, wherein the oxygen content deviation between the monocrystalline silicon and the target oxygen content is -10% to 10%, and the monocrystalline silicon is prepared by any of the above methods or by any of the above systems.

[0038] Fourthly, this application also provides a silicon wafer with controllable oxygen content, wherein the silicon wafer is processed from single-crystal silicon, and the oxygen content deviation between the oxygen content of the single-crystal silicon and the target oxygen content is -10% to 10%, wherein the single-crystal silicon is prepared by any of the above methods or by any of the above systems.

[0039] This application provides a method and system for growing monocrystalline silicon and silicon wafers with controllable oxygen content. During monocrystalline silicon growth, the actual heating time of the quartz crucible is monitored, and the difference between this heating time and the target heating time is calculated. Based on the range of this difference, a corresponding set of control parameters and their configuration values ​​are determined, including crystal rotation speed and / or crucible rotation speed. Different difference ranges correspond to different sets of control parameters and their configuration values. Based on these configuration values, the corresponding control parameters are automatically adjusted to regulate the growth conditions of the monocrystalline silicon, ensuring that the oxygen content deviation between the monocrystalline silicon and the target oxygen content is -10% to 10%. This application uses automatic gain control logic to control the control parameters during crystal growth. By monitoring the difference between the actual heating time and the target heating time, a tiered management approach is adopted to automatically adjust control parameters such as crystal rotation speed and crucible rotation speed in stages, effectively controlling the distribution of oxygen in the monocrystalline silicon. This ensures that the oxygen content of crystals produced with different heating times is basically consistent, guaranteeing product quality. Secondly, by precisely controlling the control parameters, the impact of crystal growth anomalies and excessively long quartz crucible heating time on the oxygen content of single-crystal silicon can be reduced, fluctuations and defects during crystal growth can be minimized, and the structural integrity and electrical properties of the crystal can be improved, thereby enhancing the product quality of single-crystal silicon. Automated control reduces the need for human intervention and the uncertainty of human operation, improves the stability and consistency of the production process, reduces adjustment and correction time, and increases production efficiency. Employing real-time monitoring and dynamic adjustment methods allows for flexible responses to changes in single-factor and multi-factor variables, providing more optimization options and adapting to different changes in production needs and conditions. Attached Figure Description

[0040] This application will be further described below with reference to the accompanying drawings and specific embodiments.

[0041] Figure 1 is a schematic diagram of a single-crystal silicon growth system provided in an embodiment of this application.

[0042] Figure 2 is a schematic flowchart of a single-crystal silicon growth method provided in an embodiment of this application.

[0043] Figure 3 is a schematic flowchart of another single-crystal silicon growth method provided in an embodiment of this application.

[0044] In the diagram: 1. Heating module; 2. Crucible rotation module; 3. Data processing unit; 4. System control unit; 5. Crystal rotation module. Detailed Implementation

[0045] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0046] In the description of the embodiments of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined with "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0047] The monocrystalline silicon growth process includes processes such as charging, melting, crystal pulling, necking, shoulder formation, shoulder rotation, constant diameter growth, and tailing. Typically, the main source of oxygen in monocrystalline silicon is the quartz crucible. Monocrystalline silicon growth usually uses a quartz crucible (SiO2). At high temperatures, the quartz crucible reacts with the silicon melt to generate SiO gas, which further dissolves in the silicon melt. As the crystal grows, the contact area between the silicon melt and the quartz crucible gradually decreases, the thermal environment around the furnace changes, and the flow of the silicon melt changes. These three factors cause variations in the amount of oxygen entering the melt, resulting in a high oxygen content at the beginning and a low oxygen content at the end of the monocrystalline silicon growth. Furthermore, repeated crystal growth anomalies leading to remelting and excessively long heating times can also significantly reduce the overall axial oxygen content after the final crystal growth, failing to meet specific requirements and product specifications, resulting in losses in production capacity and yield.

[0048] Specifically, during crystal growth, as the crystal pulling process proceeds, the contact area between the silicon melt and the quartz crucible gradually decreases. Therefore, the overall phenomenon is that the oxygen content is high at the head of the single crystal silicon and low at the tail. Furthermore, in cases of abnormal crystal growth, excessively long remelting and heating times can also affect the oxygen content of the single crystal silicon.

[0049] Firstly, in cases of abnormal crystal growth, a remelting operation is performed to ensure crystal quality and reduce losses. However, this causes a redistribution of oxygen content within the crystal. Since the segregation coefficient (k) of oxygen in silicon is less than 1, it is known that during crystal growth, oxygen diffuses faster in the liquid phase than in the solid phase, making it more likely to remain in the melt rather than enter the crystal. The remelting operation causes oxygen to re-enter the liquid phase from the solid phase, resulting in a redistribution of oxygen content in the melt. During the next growth cycle, due to the influence of the segregation coefficient, oxygen is more likely to remain in the melt, thus further reducing the oxygen content in the newly grown crystal. Therefore, the oxygen content in the crystal decreases after regrowth.

[0050] Secondly, oxygen has high solubility and diffusion coefficient in silicon melt, allowing it to dissolve well in high-temperature silicon melt and quickly achieve a uniform distribution within it. In other words, during the remelting process, the oxygen that re-enters the melt quickly and uniformly distributes throughout the melt. Due to diffusion, this oxygen redistributes throughout the melt, causing the oxygen content to increase rapidly and, due to the uniform distribution, to relatively decrease.

[0051] Furthermore, oxygen from the quartz crucible exists as SiO gas at high temperatures. 98% of this oxygen is carried away by the argon gas flow, with only 2% dissolving further in the silicon melt as SiO gas and entering the crystal. Excessive heating time also affects the distribution and overall level of oxygen content. Prolonged heating can lead to excessive oxygen volatilization, especially in high-temperature regions, where oxygen escapes from the crystal surface, reducing the overall oxygen content. During crystal regrowth, the corresponding oxygen is also carried away by the argon gas flow, further reducing the amount of oxygen entering the melt. This results in a further decrease in the oxygen content within the regrowth crystal. Additionally, prolonged high temperatures can cause oxygen redistribution within the crystal, leading to reduced oxygen content in some areas.

[0052] The implementation methods of this application will be described in detail below.

[0053] In existing monocrystalline silicon growth methods, when the actual heating time exceeds the target heating time, it can lead to uneven oxygen content distribution within the crystal, particularly a low overall axial oxygen content, making it difficult to meet customer requirements and product specifications. Related technologies struggle to accurately adjust control parameters, resulting in decreased product quality and production efficiency. Therefore, there is an urgent need for an improved monocrystalline silicon growth method that automatically adjusts control parameters to optimize oxygen content distribution and ensure product quality.

[0054] Referring to Figures 1 to 3, Figure 1 is a schematic diagram of the structure of a single crystal silicon growth system provided in an embodiment of this application, Figure 2 is a schematic flowchart of a single crystal silicon growth method provided in an embodiment of this application, and Figure 3 is a schematic flowchart of another single crystal silicon growth method provided in an embodiment of this application.

[0055] In order to improve the relevant technology, as shown in Figure 2, this application provides a method for growing single crystal silicon, the method including steps S101 to S103.

[0056] Step S101: During the growth of single-crystal silicon, obtain the actual heating time of the quartz crucible.

[0057] Step S102: Determine the control parameter set and its configuration parameter values ​​based on the range of the difference between the actual heating time and the target heating time; the control parameter set includes the crystal rotation speed and / or the crucible rotation speed, and different control parameter sets correspond to different ranges of difference.

[0058] Step S103: Based on the configuration parameter values ​​of the control parameter set, automatically configure the corresponding control parameters so that the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%.

[0059] The oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%. For example, it means that the ratio of the difference between the oxygen content of the monocrystalline silicon and the target oxygen content (i.e., the oxygen content deviation) to the target oxygen content is within the range of -10% to 10%.

[0060] In some embodiments, the above-described single-crystal silicon growth method can be applied to the control module of a single-crystal silicon growth system. The single-crystal silicon growth system may further include a heating module, a crystal rotation module, and a crucible rotation module. The heating module is used to heat the quartz crucible containing the raw materials, the crystal rotation module is used to rotate the single-crystal silicon, and the crucible rotation module is used to rotate the quartz crucible.

[0061] In some embodiments, the set of control parameters may further include the power of the heater.

[0062] The actual heating time of the quartz crucible refers to the actual operating time of the heating module during the single-crystal silicon growth process, i.e., the cumulative duration of heating the quartz crucible by the heating module. The target heating time is, for example, a pre-set heating time to ensure that the oxygen content in the crystal meets the requirements. As an example, the target heating time could be the minimum heating time after continuous operation where the oxygen content in the quartz crucible does not show a significant decrease. The target heating time can be obtained through one or more experiments, or predicted by a trained predictive model. The control parameter set includes, for example, one or more control parameters for adjusting the single-crystal silicon growth process, which may include crystal rotation speed and / or crucible rotation speed. Different combinations of control parameters can optimize the crystal growth conditions. Crystal rotation speed refers to the speed at which the crystal (i.e., single-crystal silicon) rotates during single-crystal silicon growth. Crucible rotation speed refers to the speed at which the quartz crucible rotates during single-crystal silicon growth.

[0063] The distribution of oxygen content in monocrystalline silicon can be optimized by adjusting the crystal rotation speed and / or crucible rotation speed. Adjusting the crystal rotation speed and / or crucible rotation speed can alter the shape of the crystal-melt interface, thus affecting the distribution and transport of oxygen at the interface. A reasonable combination of rotation speeds can maintain interface stability and contribute to uniform oxygen content. Different combinations of rotation speeds will change the convection patterns in the melt. Appropriate convection helps to uniform oxygen content and prevents excessively low local oxygen concentrations. Since oxygen enters the monocrystalline silicon due to the reaction between the quartz crucible and the silicon melt at high temperatures, adjusting control parameters such as crystal rotation speed and crucible rotation speed can effectively control the rate and amount of oxygen entering the monocrystalline silicon, ensuring that the oxygen content deviation between the monocrystalline silicon oxygen content and the target oxygen content is within -10% to 10%.

[0064] During the growth of single-crystal silicon, the interaction between the quartz crucible and the silicon melt at high temperatures generates SiO gas. This gas partially dissolves in the silicon melt and gradually enters the crystal during growth. The method described above monitors the actual heating time of the quartz crucible in real time and compares it with the target heating time. Based on the difference, a corresponding set of control parameters (including crystal rotation speed and / or crucible rotation speed) is determined to automatically adjust the control parameters during the growth process. Specifically, different ranges of difference correspond to different sets of control parameters. Based on the difference between the actual and target heating times, the crystal rotation speed and crucible rotation speed can be precisely adjusted to control the dissolution and diffusion of SiO gas in the silicon melt. As crystal growth progresses, the contact area between the quartz crucible and the silicon melt gradually decreases, while the thermal environment and the flow of the silicon melt also change. These factors collectively affect the fluctuation of oxygen content. By adjusting the control parameters, the impact of these fluctuations can be reduced, making the oxygen content of the single-crystal silicon more uniform. When crystal growth is abnormal or a remelting operation is required, this method can redistribute the oxygen content in the silicon melt by precisely adjusting relevant control parameters, reducing abnormal fluctuations in oxygen content caused by remelting or prolonged heating. Oxygen diffuses rapidly in the liquid phase; therefore, by adjusting the crucible rotation speed and crystal rotation speed, the oxygen distribution rate can be accelerated or slowed down, thereby achieving the target oxygen content control. Based on the configuration parameter values ​​of the control parameter set, the system can automatically configure the corresponding control parameters to ensure that the oxygen content in the single-crystal silicon is always maintained within the range of -10% to 10% of the target oxygen content. This automated control not only reduces errors from manual intervention but also allows for optimization based on real-time growth conditions, improving production efficiency and product quality.

[0065] By monitoring and adjusting control parameters in real time, this method can significantly reduce the fluctuation of oxygen content in monocrystalline silicon, ensuring that the oxygen content remains within the preset target range. At different stages of crystal growth, especially when there is a significant difference in oxygen content between the head and tail, this method can achieve time-based automatic gain control, automatically adjusting relevant rotation speeds to balance the oxygen content distribution and improving the problem of inconsistent crystal performance caused by uneven oxygen content. When crystal growth is abnormal or remelting is required, this method precisely controls the redistribution of oxygen content, reducing crystal quality problems caused by excessively low or high oxygen content, thus lowering scrap rates and production losses. This method reduces reliance on manual operation, improves the stability and efficiency of the production process, better adapts to different production needs, significantly improves the yield of monocrystalline silicon, reduces defective products in the production process, and improves product consistency, ultimately increasing overall production capacity.

[0066] The embodiments of this application do not limit the target oxygen content, which can be selected according to actual needs. For example, the target oxygen content may be 8.5 ppma, 10 ppma, 11 ppma, 11.5 ppma, 12 ppma, 14.5 ppma, etc. Here, ppma represents parts per million (ppma), indicating the number of atoms of a specific element in one million atoms. For example, if the oxygen content of a single-crystal silicon is 10 ppma, it means that there are 10 oxygen atoms in 1,000,000 atoms.

[0067] In some embodiments, a tiered management approach can be adopted to divide the range of differences into multiple ranges. As an example, the range of differences could be divided into (-∞, 0h], (0h, 60h], (60h, 140h], etc. As another example, the range of differences could be divided into (-∞, 0h], (0h, 30h], (30h, 60h], (60h, 100h], (100h, 140h], etc. Here, h represents hours, a unit of time, and the symbol ∞ represents infinity.

[0068] The above embodiment acquires the actual heating time in real time during the monocrystalline silicon growth process and calculates the difference between it and the target heating time. Based on the range of this difference, a corresponding set of control parameters and their configuration parameter values ​​are determined, including crystal rotation speed and / or crucible rotation speed. Different difference ranges correspond to different sets of control parameters and their configuration parameter values. Based on these configuration parameter values, the corresponding control parameters are automatically adjusted to regulate the growth conditions of the monocrystalline silicon, ensuring that the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%.

[0069] The above embodiments employ automatic gain control logic to control parameters during crystal growth. By monitoring the difference between the actual heating time and the target heating time, a tiered management approach is used to automatically adjust control parameters such as crystal rotation speed and crucible rotation speed in stages. This effectively controls the distribution of oxygen in monocrystalline silicon, ensuring that the oxygen content of crystals produced with different heating times is essentially consistent, thus guaranteeing product quality. Secondly, precise control of parameters reduces the impact of crystal growth anomalies and excessively long quartz crucible heating time on the oxygen content of monocrystalline silicon, minimizing fluctuations and defects during crystal growth, improving the structural integrity and electrical properties of the crystal, and ultimately enhancing the quality of monocrystalline silicon products. Automated control reduces the need for human intervention and the uncertainty of human operation, improving the stability and consistency of the production process, reducing adjustment and correction time, and increasing production efficiency. The use of real-time monitoring and dynamic adjustment allows for flexible responses to changes in single-factor and multi-factor variables, providing more optimization options and adapting to different production needs and conditions.

[0070] To automatically adjust the control parameter set based on the difference between the actual heating time and the target heating time to optimize the oxygen content distribution, in some embodiments, the process of determining the control parameter set may include: if the difference range falls within a first type of difference range, using the crucible rotation speed as a control parameter in the control parameter set; if the difference range falls within a second type of difference range, using both the crystal rotation speed and the crucible rotation speed as control parameters in the control parameter set; the minimum value of the second type of difference range is not less than the maximum value of the first type of difference range.

[0071] In some embodiments, the method may further include: when the difference range in which the difference is located is a third type of difference range, automatically configuring the crystal rotation speed based on the target parameter value of the crystal rotation speed, and automatically configuring the crucible rotation speed based on the target parameter value of the crucible rotation speed.

[0072] As an example, the first type of difference range includes (0h, 30h] and (30h, 60h], meaning that both of these difference ranges are classified as the first type of difference range. The second type of difference range includes (60h, 100h] and (100h, 140h], meaning that both of these difference ranges are classified as the second type of difference range. The third type of difference range includes (-∞, 0h], meaning that when the actual heating time is less than or equal to the target heating time, the target parameter values ​​of the crystal rotation speed and crucible rotation speed are directly used to automatically configure the corresponding control parameters (i.e., crystal rotation speed and crucible rotation speed), resulting in a simple and effective control method.

[0073] As an example, when the difference range is (0h, 30h] or (30h, 60h], the crucible rotation speed C / R (i.e., Crucible Rotation Speed) is used as the control parameter in the control parameter set. When the difference range is (60h, 100h] or (100h, 140h], the crucible rotation speed C / R and the crystal rotation speed S / R (i.e., Silicon Rotation Speed) are used as the control parameters in the control parameter set.

[0074] Different difference ranges correspond to different control strategies to ensure that the oxygen content in the crystal remains stable. In the above embodiment, when the difference ΔT is within the first type of difference range (e.g., (0h, 30h] or (30h, 60h]), only the crucible rotation speed (C / R) is set as a control parameter; when the difference ΔT is within the second type of difference range (e.g., (60h, 100h] or (100h, 140h]), both the crucible rotation speed (C / R) and the crystal rotation speed (S / R) are set as control parameters. Through this tiered management method, the control parameter set is automatically configured to achieve precise control of the oxygen content, ensuring that the oxygen content of the single crystal silicon matches the target oxygen content. The oxygen content deviation is between -10% and 10%. Using the above-mentioned monocrystalline silicon growth method, by automatically adjusting the rotation speed of the crystal and crucible in stages, the distribution of oxygen in the monocrystalline silicon can be controlled more precisely, ensuring a more uniform oxygen content. This method can flexibly adjust control parameters according to different difference ranges, reducing oxygen content fluctuations during crystal growth and improving the product quality of monocrystalline silicon. The automatic gain control reduces the need for human intervention, improves production efficiency through optimized control strategies, and reduces computational load and control complexity, better meeting customer requirements for product specifications and quality.

[0075] In this control strategy, when the difference between the actual and target heating times is small, only the crucible rotation speed (C / R) is adjusted. When the difference is large, both the crucible rotation speed (C / R) and the crystal rotation speed (S / R) are adjusted simultaneously. This phased control strategy makes the control process more flexible. When the difference is small, only one control parameter (crucible rotation speed) needs to be adjusted, making the control method relatively simple and easy to implement. Only when the difference is large does it need to consider multiple control parameters (crystal rotation speed and crucible rotation speed). As the difference increases, the control strategy transitions from single-parameter adjustment to multi-parameter adjustment. This gradual adjustment method can better adapt to different heating time differences, ensuring control accuracy. Therefore, when the difference is small, adjusting only the crucible rotation speed reduces the system's adjustment frequency and complexity, lowers control costs, and reduces unnecessary complex operations. Adjusting only one control parameter results in less computation, faster system response, and the ability to quickly adapt to relatively small heating time differences, improving overall control efficiency. When the difference is large, adjusting both the crystal rotation speed and the crucible rotation speed simultaneously allows for more comprehensive optimization of the oxygen content distribution, ensuring control accuracy. The phased control strategy improves system efficiency while ensuring control effectiveness. By dynamically adjusting the control strategy based on the range of the difference between the actual and target heating times, it can flexibly respond to different production conditions, ensuring high-quality monocrystalline silicon is obtained under various circumstances. This control method not only effectively controls oxygen content but also reduces system complexity and operating costs while improving production efficiency, making the entire monocrystalline silicon growth process more economical and efficient.

[0076] Existing single-crystal silicon growth methods lack refined control strategies for different difference ranges when controlling oxygen content, and involve large computational loads and low control efficiency, making them unsuitable for complex growth processes. In some embodiments, the process of determining the configuration parameter values ​​of the control parameter set may include: for each control parameter, performing the following processing: determining the correspondence between the configuration parameter value and the target parameter value of the control parameter based on the difference range in which the difference lies; different correspondences correspond to different difference ranges; calculating the configuration parameter value of the control parameter according to the target parameter value and the correspondence.

[0077] In some embodiments, the correspondence may be represented by a corresponding formula or a corresponding model.

[0078] Here, the configuration parameter value refers to the specific numerical value obtained through calculation or calibration for configuring the control parameters, and these values ​​are used to achieve the required control objectives. The target parameter value refers to the reference value that the control parameters should achieve to ensure that the monocrystalline silicon growth process meets actual needs. The correspondence relationship refers to the mathematical relationship between the configuration parameter value and the target parameter value, for example, expressed in the form of a correspondence formula or a correspondence model. The correspondence formula or correspondence model takes into account the influence of the difference and can be determined based on the range of the difference. The embodiments of this application do not limit the correspondence model, which can be, for example, a deep learning-based model.

[0079] To determine the configuration parameter values ​​of the control parameters, the configuration parameter values ​​are calculated using the corresponding formula or model and the target parameter values, based on the correspondence between the configuration parameter values ​​and the target parameter values, to ensure that the configuration parameter values ​​of the control parameters can meet the needs of the growth process.

[0080] In some embodiments, the correspondence can be expressed by a correspondence formula, wherein one or more compensation coefficients in the correspondence formula are determined based on the range of the difference.

[0081] The corresponding formula, for example, is a mathematical expression used to calculate the configuration parameter values ​​of the control parameters during the growth of single-crystal silicon. The compensation coefficient included in the formula allows for flexible adjustment of the parameter values ​​based on the actual difference. The compensation coefficient, a factor in the formula, is used to adjust the control parameters to accommodate the difference between the actual heating time and the target heating time. The compensation coefficient varies according to the range of the difference to achieve more precise control.

[0082] This application does not limit the target parameter values ​​for each control parameter. Reasonable values ​​can be selected based on factors such as the length range of the monocrystalline silicon, equipment performance in the actual production process, and product requirements. For example, the target parameter value for the crucible rotation speed (i.e., target crucible rotation speed C / R Target) can range from 0.2 to 1.1 RPM (revolutions per minute), and the target parameter value for the crystal rotation speed (i.e., target crystal rotation speed S / R Target) can range from 6 to 16 RPM. For furnaces with different product specifications and different insulation materials, the target parameter values ​​for the crystal rotation speed and crucible rotation speed can be different.

[0083] The automatic configuration process of control parameters is illustrated below with an example. As shown in Figure 3, assume that a single-crystal silicon growth system is used for continuous production during the single-crystal silicon growth process. After the previous single-crystal silicon (e.g., silicon ingot) is grown, its oxygen content can be tested and recorded. In this single-crystal silicon growth process, the actual heating time of the quartz crucible (i.e., T) is... xThe process is monitored and compared with the target heating time (i.e., T0). The target heating time T0 is assumed to be the minimum heating time at which the oxygen content in the quartz crucible does not significantly decrease after continuous operation. The actual heating time T is assumed to be... x The difference ΔT (e.g., 10h) between the target heating time T0 and the target heating time T0 falls within the range of (0h, 30h). The crucible rotation speed C / R is used as a control parameter in the control parameter set. In this case, the control parameter set includes one control parameter. Where ΔT = T x -T0. Then, based on the difference range (i.e., (0h, 30h]), obtain the configuration parameter value of the crucible rotation speed C / R (i.e., configure the crucible rotation speed C / R). set ) and the target parameter value (i.e., the target crucible rotation speed C / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: C / R set =C / R target ×(1+c1). Where c1 is the crucible rotation speed compensation coefficient corresponding to the difference range (0h, 30h). Assuming c1 is 15%, the formula between the configured parameter value and the target parameter value of the crucible rotation speed is: C / R set =C / R target ×(1+15%). Next, based on the target parameter value of the crucible rotation speed (e.g., 0.94 RPM) and the corresponding formula, the configuration parameter value of the crucible rotation speed can be calculated as: C / R set =0.94RPM×(1+15%)=1.08RPM.

[0084] Similarly, assuming the actual heating time T x The difference ΔT (e.g., 50h) between the target heating time T0 and the target heating time T0 falls within the range of (30h, 60h). The crucible rotation speed C / R is used as a control parameter in the control parameter set, which then includes only one control parameter. Based on this difference range (i.e., (30h, 60h), the configuration parameter value for the crucible rotation speed C / R is obtained (i.e., the crucible rotation speed C / R is configured). set ) and the target parameter value (i.e., the target crucible rotation speed C / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: C / R set =C / R target ×(1+c2). Where c2 is the crucible rotation speed compensation coefficient corresponding to the difference range (30h, 60h). Assuming c2 is 25%, the formula between the configured parameter value and the target parameter value of the crucible rotation speed is: C / R set =C / R target×(1+25%). Next, based on the target parameter value of the crucible rotation speed (e.g., 0.94 RPM) and the corresponding formula, the configuration parameter value of the crucible rotation speed can be calculated as: C / R set =0.94RPM×(1+25%)=1.18RPM.

[0085] Assuming the difference ΔT (e.g., 80h) between the actual heating time Tx and the target heating time T0 falls within the range of (60h, 100h), the crucible rotation speed C / R and the crystal rotation speed S / R are used as control parameters in the control parameter set. In this case, the control parameter set includes two control parameters. Then, based on the difference range (i.e., (60h, 100h)), the configuration parameter value for the crucible rotation speed C / R is obtained (i.e., the crucible rotation speed C / R is configured). set ) and the target parameter value (i.e., the target crucible rotation speed C / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: C / R set =C / R target ×(1+c3). Where c3 is the crucible rotation speed compensation coefficient corresponding to the difference range (60h, 100h). Assuming c3 is 30%, the formula between the configured parameter value and the target parameter value of the crucible rotation speed is: C / R set =C / R target ×(1+30%). Next, based on the target parameter value of the crucible rotation speed (e.g., 0.94 RPM) and the corresponding formula, the configuration parameter value of the crucible rotation speed can be calculated as: C / R set =0.94RPM × (1 + 30%) = 1.22RPM. And, based on the difference range (i.e., (60h, 100h]), obtain the configuration parameter value for the crystal rotation speed S / R (i.e., configure the crystal rotation speed S / R). set ) and the target parameter value (i.e., the target crystal rotation speed S / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: S / R set =S / R target ×(1-s1). Where s1 is the crystal rotation speed compensation coefficient corresponding to the difference range (60h, 100h). Assuming s1 is 15%, the formula between the configured parameter value and the target parameter value of the crystal rotation speed is: S / R set =S / R target ×(1-15%). Next, based on the target crystal rotation speed parameter value (e.g., 16 RPM) and the corresponding formula, the configuration parameter value of the crystal rotation speed can be calculated as: S / R set =16RPM×(1-15%)=13.6RPM.

[0086] Assuming the actual heating time is T xThe difference ΔT (e.g., 120h) between the target heating time T0 and the target heating time T0 falls within the range of (100h, 140h). The crucible rotation speed C / R and crystal rotation speed S / R are used as control parameters in the control parameter set, resulting in two control parameters in the set. Then, based on the difference range (i.e., (100h, 140h)), the configuration parameter value for the crucible rotation speed C / R is obtained (i.e., the crucible rotation speed C / R is configured). set ) and the target parameter value (i.e., the target crucible rotation speed C / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: C / R set =C / R target ×(1+c4). Where c4 is the crucible rotation speed compensation coefficient corresponding to the difference range (100h, 140h). Assuming c4 is 35%, the formula between the configured parameter value and the target parameter value of the crucible rotation speed is: C / R set =C / R target ×(1+35%). Next, based on the target parameter value of the crucible rotation speed (e.g., 0.94 RPM) and the corresponding formula, the configuration parameter value of the crucible rotation speed can be calculated as: C / R set =0.94RPM × (1 + 35%) = 1.27RPM. And, based on the difference range (i.e., (100h, 140h]), obtain the configuration parameter value for the crystal rotation speed S / R (i.e., configure the crystal rotation speed S / R). set ) and the target parameter value (i.e., the target crystal rotation speed S / R) target The correspondence between them (e.g., the corresponding formula), assuming the corresponding formula is: S / R set =S / R target ×(1-s2). Where s2 is the crystal rotation speed compensation coefficient corresponding to the difference range (100h, 140h). Assuming s2 is 15%, the formula between the configured parameter value and the target parameter value of the crystal rotation speed is: S / R set =S / R target ×(1-15%). Next, based on the target crystal rotation speed parameter value (e.g., 16 RPM) and the corresponding formula, the configuration parameter value of the crystal rotation speed can be calculated as: S / R set =16RPM×(1-15%)=13.6RPM.

[0087] As mentioned above, when ΔT does not exceed 60h, the oxygen content can be improved by adjusting the crucible rotation speed C / R. This is because, within a short heating time, it is primarily necessary to control the uniform distribution of oxygen within the crystal to prevent excessively low local oxygen concentrations. Since c1 to c4 are all greater than 0, it indicates an increase in the crucible rotation speed. Increasing the crucible rotation speed can enhance melt convection and promote uniform oxygen distribution. A suitable crucible rotation speed can maintain the stability of the crystal-melt interface, contributing to uniform oxygen absorption.

[0088] When ΔT exceeds 60h but does not exceed 140h, in addition to adjusting the crucible rotation speed (C / R), the crystal rotation speed (S / R) can also be optimized. This is because longer heating times lead to more significant oxygen escape and redistribution, requiring comprehensive control to improve oxygen content. In this case, on the one hand, adjusting the crystal rotation speed promotes uniform oxygen distribution. On the other hand, increasing the crucible rotation speed enhances melt convection, further promoting uniform oxygen distribution and absorption. Combining the adjustment of both crystal and crucible rotation speeds allows for more effective control of oxygen escape and redistribution, ensuring a uniform axial distribution of oxygen content.

[0089] In some embodiments, the target parameter value of the control parameter can be determined based on the length range of the monocrystalline silicon.

[0090] In other words, based on the length range of the monocrystalline silicon, the growth process is divided into multiple growth stages. Different length ranges correspond to different growth stages, and different growth stages correspond to different target parameter values. Assuming the monocrystalline silicon growth process includes n growth stages, where n is a positive integer, the nth body growth in Figure 3 corresponds to the nth growth stage.

[0091] In some embodiments, the method may further include: dividing the growth process of the monocrystalline silicon into multiple growth stages based on the length range of the monocrystalline silicon; in each growth stage, testing the oxygen content of the monocrystalline silicon, and calculating the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content.

[0092] For example, a data table can be used to store the correspondence between the length range (of the single-crystal silicon) and the target parameter values ​​(of the control parameters). In practical applications, the data table can be consulted to determine the corresponding target parameter values ​​(of the control parameters) for the length range. As an example, when the length range of the single-crystal silicon is 0mm-300mm, the corresponding target parameter value for the crucible rotation speed is C / R. target The target parameter value for crystal rotation speed is 0.94 RPM, corresponding to the crystal rotation speed S / R. target The target value for crucible rotation speed is 16 RPM; when the length of the single crystal silicon is in the range of 300 mm to 600 mm, the corresponding target parameter value for crucible rotation speed is C / R. targetThe target parameter value S / R for the crystal rotation speed is 0.58 RPM. target The target value for crucible rotation speed is 10 RPM; when the length of the single crystal silicon is in the range of 600 mm to 900 mm, the corresponding target parameter value for C / R is... target The target parameter value S / R for the crystal rotation speed is 0.22 RPM. target The target value for crucible rotation speed is 6 RPM; when the length of the single crystal silicon is in the range of 900 mm-1200 mm, the corresponding target parameter value for crucible rotation speed is C / R. target The target parameter value for crystal rotation speed is 0.64 RPM, corresponding to the crystal rotation speed S / R. target The target value for crucible rotation speed is 6 RPM; when the length of the single crystal silicon is in the range of 1200mm-1500mm, the corresponding target parameter value for crucible rotation speed is C / R. target The target parameter value S / R for the crystal rotation speed is 1.06 RPM. target It is 6 RPM.

[0093] In the actual monocrystalline silicon growth process, for each growth stage, the applicant tested the oxygen content of the monocrystalline silicon at that growth stage and calculated the oxygen content deviation between the oxygen content and the target oxygen content, as shown below.

[0094] In the first growth stage, when the length of the single crystal silicon is in the range of 0mm-300mm: when the difference in heating time ΔT is in the range of (0h, 30h), the calculated oxygen content deviation is 0.11ppma; when the difference in heating time ΔT is in the range of (30h, 60h), the calculated oxygen content deviation is 0.12ppma; when the difference in heating time ΔT is in the range of (60h, 100h), the calculated oxygen content deviation is 0.22ppma; and when the difference in heating time ΔT is in the range of (100h, 140h), the calculated oxygen content deviation is 0.46ppma.

[0095] In the second growth stage, when the length of the single crystal silicon is in the range of 300mm-600mm: when the difference in heating time ΔT is in the range of (0h, 30h), the calculated oxygen content deviation is 0.11ppma; when the difference in heating time ΔT is in the range of (30h, 60h), the calculated oxygen content deviation is 0.12ppma; when the difference in heating time ΔT is in the range of (60h, 100h), the calculated oxygen content deviation is 0.23ppma; and when the difference in heating time ΔT is in the range of (100h, 140h), the calculated oxygen content deviation is 0.45ppma.

[0096] In the third growth stage, when the length of the single crystal silicon is in the range of 600mm-900mm: when the difference in heating time ΔT is in the range of (0h, 30h), the calculated oxygen content deviation is -0.10ppma; when the difference in heating time ΔT is in the range of (30h, 60h), the calculated oxygen content deviation is -0.10ppma; when the difference in heating time ΔT is in the range of (60h, 100h), the calculated oxygen content deviation is 0.15ppma; when the difference in heating time ΔT is in the range of (100h, 140h), the calculated oxygen content deviation is 0.39ppma.

[0097] In the fourth growth stage, when the length of the single crystal silicon is in the range of 900mm-1200mm: when the difference in heating time ΔT is in the range of (0h, 30h), the calculated oxygen content deviation is -0.07ppma; when the difference in heating time ΔT is in the range of (30h, 60h), the calculated oxygen content deviation is -0.07ppma; when the difference in heating time ΔT is in the range of (60h, 100h), the calculated oxygen content deviation is 0.38ppma; when the difference in heating time ΔT is in the range of (100h, 140h), the calculated oxygen content deviation is 0.62ppma.

[0098] In the fifth growth stage, when the length of the single crystal silicon is in the range of 1200mm-1500mm: when the difference in heating time ΔT is in the range of (0h, 30h), the calculated oxygen content deviation is -0.07ppma; when the difference in heating time ΔT is in the range of (30h, 60h), the calculated oxygen content deviation is -0.07ppma; when the difference in heating time ΔT is in the range of (60h, 100h), the calculated oxygen content deviation is 0.16ppma; when the difference in heating time ΔT is in the range of (100h, 140h), the calculated oxygen content deviation is 0.37ppma.

[0099] As can be seen, even though the difference ΔT between the actual heating time and the target heating time falls within different ranges, the calculated oxygen content deviation at each growth stage of the monocrystalline silicon growth process has a minimum value of -0.10 ppma and a maximum value of 0.62 ppma. Not only is the ratio between the oxygen content deviation of the monocrystalline silicon and the target oxygen content between -10% and 10%, but the oxygen content deviation is also always within the target oxygen content deviation range (e.g., [-0.25 ppma, 0.75 ppma]).

[0100] Furthermore, the applicant also discovered that, when the difference ΔT corresponding to the heating time falls within the range of (0h, 30h), if c1 is greater than 15% or less than 15%, the calculated oxygen content deviation will be greater than ±0.3ppma; when the difference ΔT corresponding to the heating time falls within the range of (30h, 60h), if c2 is greater than 25% or less than 25%, the calculated oxygen content deviation will be greater than ±0.3ppma; when the difference ΔT corresponding to the heating time falls within the range of (60h, 100h), if c3 is greater than 30% or less than 30%, the calculated oxygen content deviation will be greater than ±0.3ppma; and when the difference ΔT corresponding to the heating time falls within the range of (60h, 100h), if c3 is greater than 30% or less than 30%, the calculated oxygen content deviation will be greater than ±0.3ppma. If c4 is greater than 35% and less than 35%, and s1 is greater than 15% or less than 15%, the calculated oxygen content deviation will be greater than ±0.4 ppma, and this will lead to crystal defects. When the difference ΔT corresponding to the heating time falls within the range of (100h, 140h), if c4 is greater than 35% and less than 35%, and s2 is greater than 15% and less than 15%, the calculated oxygen content deviation will be greater than ±0.7 ppma. Here, ±0.3 ppma refers to the numerical range of [-0.3 ppma, 0.3 ppma]. Other similar expressions have similar meanings and will not be elaborated upon here.

[0101] In the growth of large-size single-crystal silicon, based on the applicant's experience, in order to ensure that the product results corresponding to the original control parameters do not change, especially in order to maintain interface stability, the crucible rotation speed compensation coefficient generally does not exceed 40%; in order to improve the oxygen content of the crystal, but also to control good crystal lattice stacking quality, the crystal rotation speed compensation coefficient generally does not exceed 15%.

[0102] Using the above-described single-crystal silicon growth method, the actual heating time T of the quartz crucible during the single-crystal silicon growth process is... x The difference ΔT between the target heating time T0 and the target heating time T0 is monitored and anchored. ΔT is managed in stages, and automatic gain control is applied to the crystal growth control parameters. The adjustment of control parameters through staged management of ΔT ensures that the silicon-oxygen content of single crystals produced at different ΔT values ​​can be controlled at essentially the same level. The configuration of control parameters corresponding to staged management includes, for example, different combinations of crystal rotation speed and crucible rotation speed, providing more options for optimizing product oxygen content amidst the interaction of single-factor and multi-factor variables.

[0103] The aforementioned monocrystalline silicon growth method optimizes the oxygen content distribution within the monocrystalline silicon, particularly its axial distribution. Specifically, by acquiring the actual heating time in real time and dynamically adjusting control parameters based on the difference between the actual heating time and the target heating time, a closed-loop control system is formed. This system can rapidly respond to changes in process conditions and make real-time adjustments, avoiding the lag and inaccuracies found in related static control methods. It ensures that the oxygen content deviation between the monocrystalline silicon and the target oxygen content is within -10% to 10%. This real-time adjustment mechanism precisely controls the oxygen content, preventing uneven oxygen content caused by variations in heating time.

[0104] A differential graded control strategy is adopted, adjusting the crystal rotation speed and crucible rotation speed separately according to the magnitude of the difference. This refined control strategy reduces control complexity and avoids over-adjustment when the difference is small; while allowing for more comprehensive adjustments when the difference is large, ensuring control accuracy and stability. This differential graded control strategy not only improves control efficiency but also ensures control accuracy, avoiding unnecessary fluctuations caused by over-adjustment.

[0105] Based on the length range of the monocrystalline silicon, the monocrystalline silicon growth process is divided into multiple growth stages. Different length ranges correspond to different target parameter values, resulting in different configuration parameter values ​​calculated based on these target parameter values. Through a hierarchical control method based on the monocrystalline silicon length, different length ranges correspond to different target parameter values ​​and target oxygen contents, making the control of each growth stage more targeted. This method enables more targeted optimization of different stages in the monocrystalline silicon growth process, ensuring a uniform oxygen content distribution at each growth stage.

[0106] The monocrystalline silicon growth process is divided into multiple growth stages, and the oxygen content of the monocrystalline silicon is tested in each growth stage. Based on the oxygen content deviation between the test results and the target oxygen content, the relevant control parameters can be further optimized in the subsequent automatic gain control process.

[0107] Therefore, the above-mentioned monocrystalline silicon growth method effectively optimizes the oxygen content distribution in monocrystalline silicon, especially the axial distribution, by combining real-time monitoring, refined control strategies, staged optimization and dynamic adjustment, thereby improving the quality and production efficiency of monocrystalline silicon.

[0108] As shown in Figure 1, this application embodiment also provides a single-crystal silicon growth system, including a control module, a heating module 1, a crystal rotation module 5, and a crucible rotation module 2. The control module is used to execute any of the above methods. The heating module 1 is used to heat the quartz crucible containing the raw material. The crystal rotation module 5 is used to rotate the single-crystal silicon. The crucible rotation module 2 is used to rotate the quartz crucible.

[0109] In some embodiments, the control module may include a data processing unit 3 and a system control unit 4. The data processing unit 3 is used to acquire the actual heating time of the quartz crucible during the growth of single-crystal silicon; and to determine a set of control parameters and their configuration parameter values ​​based on the range of the difference between the actual heating time and the target heating time. The control parameter set includes the crystal rotation speed of the crystal rotation module 5 and / or the crucible rotation speed of the crucible rotation module 2, with different control parameter sets corresponding to different ranges of difference. The system control unit 4 is used to automatically configure corresponding control parameters based on the configuration parameter values ​​of the control parameter set, so that the oxygen content deviation between the oxygen content of the single-crystal silicon and the target oxygen content is -10% to 10%.

[0110] In the above embodiments, the control module of the monocrystalline silicon growth system adopts a split design, including a data processing unit 3 and a system control unit 4. The data processing unit 3 focuses on data processing, such as acquiring the actual heating time and comparing it with the target heating time to determine the corresponding control parameter set and calculate the configuration parameter values ​​of the relevant control parameters. The system control unit 4 can receive the control parameter set and its configuration parameter values ​​from the data processing unit 3 and automatically configure the control parameters of the relevant hardware of the monocrystalline silicon growth system. For example, it adjusts the crystal rotation speed of the crystal rotation module 5 and the crucible rotation speed of the crucible rotation module 2 to ensure that the oxygen content of the monocrystalline silicon deviates from the target oxygen content by -10% to 10%. With the split design of the data processing unit 3 and system control unit 4, the data processing unit 3 can be specifically optimized for processing speed and efficiency, achieving high-speed data processing and real-time parameter decision-making. The system control unit 4 can quickly receive the output of the data processing unit 3 and adjust the operation of the monocrystalline silicon growth system in real time, reducing latency and improving the overall response speed of the system. The split design allows each unit to focus on its core function, reducing functional overlap and potential conflicts between modules, thereby improving the stability and reliability of the system. This design also makes future upgrades and maintenance easier. For example, data processing unit 3 can be upgraded separately to adopt more advanced data processing algorithms without having to redesign the entire control module. By adjusting and controlling growth parameters more quickly and precisely, the system can produce high-quality monocrystalline silicon materials more efficiently, while reducing scrap rates and production costs.

[0111] In some embodiments, the data processing unit 3 may determine the control parameter set in the following manner: when the difference range in which the difference value is located is a first type of difference range, the crystal rotation speed is used as the control parameter in the control parameter set; when the difference range in which the difference value is located is a second type of difference range, the crystal rotation speed and the crucible rotation speed are used as the control parameters in the control parameter set; the minimum value of the second type of difference range is not less than the maximum value of the first type of difference range.

[0112] In some embodiments, the data processing unit 3 may determine the configuration parameter values ​​of the control parameter set in the following manner: for each control parameter, perform the following processing: based on the difference range in which the difference lies, determine the correspondence between the configuration parameter value and the target parameter value of the control parameter; different difference ranges correspond to different correspondences; calculate the configuration parameter value of the control parameter according to the target parameter value of the control parameter and the correspondence.

[0113] In some embodiments, the correspondence may be represented by a corresponding formula or a corresponding model.

[0114] In some embodiments, the correspondence can be expressed by a correspondence formula, wherein one or more compensation coefficients in the correspondence formula are determined based on the range of the difference.

[0115] In some embodiments, the target parameter value of the control parameter can be determined based on the length range of the monocrystalline silicon.

[0116] In some embodiments, the data processing unit 3 can also be used to divide the growth process of the single crystal silicon into multiple growth stages based on the length range of the single crystal silicon; in each growth stage, the oxygen content of the single crystal silicon is tested, and the oxygen content deviation between the oxygen content of the single crystal silicon and the target oxygen content is calculated.

[0117] This application also provides a monocrystalline silicon with controllable oxygen content, wherein the oxygen content deviation between the monocrystalline silicon and the target oxygen content is -10% to 10%, and the monocrystalline silicon is prepared by any of the above methods or by any of the above systems.

[0118] This application also provides a silicon wafer with controllable oxygen content. The silicon wafer is obtained by processing monocrystalline silicon. The oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%. The monocrystalline silicon is prepared by any of the above methods or by any of the above systems.

[0119] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referred to mutually. Each embodiment focuses on describing the differences from other embodiments. In particular, for the product embodiments, since they are basically similar to the method embodiments, the description is relatively simple, and the relevant parts can be referred to the description of the method embodiments.

[0120] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as “upper,” “lower,” “left,” and “right” are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0121] It is understandable that when a component such as a layer, film, region, or substrate is referred to as being "above" or "below" another component, the component may be "directly" located "above" or "below" the other component, or there may be intermediate components present.

[0122] In the description of the above embodiments, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.

[0123] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A method for growing single-crystal silicon, the method comprising: During the growth of single-crystal silicon, the actual heating time of the quartz crucible is obtained; Based on the range of the difference between the actual heating time and the target heating time, a set of control parameters and their configuration parameter values ​​are determined; the set of control parameters includes crystal rotation speed and / or crucible rotation speed, and different control parameter sets correspond to different ranges of difference. Based on the configuration parameter values ​​of the control parameter set, the corresponding control parameters are automatically configured so that the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%.

2. The method for growing single-crystal silicon according to claim 1, wherein, The process of determining the set of control parameters includes: When the difference range is within the first type of difference range, the crucible rotation speed is used as the control parameter in the control parameter set. When the difference falls within the second type of difference range, the crystal rotation speed and crucible rotation speed are used as control parameters in the control parameter set; the minimum value of the second type of difference range is not less than the maximum value of the first type of difference range.

3. The method for growing single-crystal silicon according to claim 1, wherein, The process of determining the configuration parameter values ​​of the control parameter set includes: For each control parameter, perform the following processing: Based on the range of the difference, the correspondence between the configuration parameter value and the target parameter value of the control parameter is determined; different ranges of difference correspond to different correspondences. The configuration parameter value of the control parameter is calculated based on the target parameter value of the control parameter and the corresponding relationship.

4. The method for growing single-crystal silicon according to claim 3, wherein, The correspondence is represented by a corresponding formula or a corresponding model.

5. The method for growing single-crystal silicon according to claim 3, wherein, The correspondence is expressed by a correspondence formula, and one or more compensation coefficients in the correspondence formula are determined according to the range of the difference.

6. The method for growing single-crystal silicon according to claim 3, wherein, The target parameter value of the control parameter is determined based on the length range of the monocrystalline silicon.

7. The method for growing single-crystal silicon according to claim 1, wherein, The method further includes: Based on the length range of the monocrystalline silicon, the growth process of the monocrystalline silicon is divided into multiple growth stages; During each growth stage, the oxygen content of the monocrystalline silicon is tested, and the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is calculated.

8. A single-crystal silicon growth system, comprising: A control module for performing the method according to any one of claims 1 to 7; The heating module is used to heat the quartz crucible containing the raw materials; Crystal rotation module for rotating single-crystal silicon; A crucible rotation module is used to rotate the quartz crucible.

9. A monocrystalline silicon with controllable oxygen content, wherein the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%, and the monocrystalline silicon is prepared by the method of any one of claims 1-7, or by the system of claim 8.

10. A silicon wafer with controllable oxygen content, wherein the silicon wafer is obtained by processing monocrystalline silicon, the oxygen content deviation between the oxygen content of the monocrystalline silicon and the target oxygen content is -10% to 10%, and the monocrystalline silicon is prepared by the method of any one of claims 1-7, or prepared by the system of claim 8.

Images