Display substrate and display device

Abstract

A display substrate and a display device. The display substrate comprises a display area (100), a hole area (300) located in the display area (100), and an encapsulation area (200) located between the display area (100) and the hole area (300). The encapsulation area (200) comprises at least one isolation structure provided on a base (101), and conductive material layers (52). The conductive material layers (52) are arranged on the side of the at least one isolation structure distant from the base (101). The at least one isolation structure comprises a conductive structure and an insulating dielectric layer (60); the conductive structure at least comprises a top surface on the side distant from the base (101); and at least part of the insulating dielectric layer (60) is arranged between the corresponding conductive material layer (52) and the top surface.

Description

Display substrate and display device TECHNICAL FIELD

[0001] The present document relates to, but is not limited to, the technical field of display, in particular to a display substrate and a display device. BACKGROUND

[0002] Organic Light Emitting Diode (OLED) and Quantum-dot Light Emitting Diodes (QLED) are active light-emitting display devices, which have the advantages of self-emission, wide viewing angle, high contrast, low power consumption, extremely high response speed, thinness, flexibility, and low cost. With the continuous development of display technology, flexible display devices using OLED or QLED as light-emitting devices and controlled by Thin Film Transistor (TFT) have become the mainstream products in the current display field.

[0003] SUMMARY

[0004] The following is a summary of the subject matter of the detailed description herein. This summary is not intended to limit the scope of the claims.

[0005] In one aspect, the present disclosure provides a display substrate, comprising a display area, a hole area located in the display area, and an encapsulation area located between the display area and the hole area, the encapsulation area comprising at least one isolation structure disposed on a substrate and a conductive material layer disposed on a side of the at least one isolation structure away from the substrate, the at least one isolation structure comprising a conductive structure and an insulating medium layer, the conductive structure comprising at least a top surface on a side away from the substrate, and the conductive material layer and the top surface being disposed with at least part of the insulating medium layer therebetween.

[0006] In an exemplary embodiment, the top surface of the conductive structure comprises a groove and first and second flat areas located on opposite sides of the groove, the first and second flat areas are parallel to the substrate, the groove is recessed towards the substrate, and at least part of the insulating medium layer covers the first and second flat areas; the first and second flat areas are each disposed with the insulating medium layer therebetween and the conductive material layer.

[0007] In an exemplary embodiment, the groove comprises inner side walls on opposite sides, at least one of the inner side walls on the opposite sides comprises a third flat surface, the insulating medium layer covers the third flat surface, and the conductive material layer and the third flat surface are disposed with the insulating medium layer therebetween.

[0008] In an example embodiment, the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the inner sidewalls of the opposite sides of the first conductive structure layer and the second conductive structure layer are respectively the inner sidewalls of the opposite sides of the groove; or, the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the inner sidewalls of the opposite sides of the second conductive structure layer cover respectively the inner sidewalls of the opposite sides of the first conductive structure layer, the inner sidewalls of the opposite sides of the second conductive structure layer are respectively the inner sidewalls of the opposite sides of the groove; or, the conductive structure comprises a conductive structure layer, the inner sidewalls of the opposite sides of the conductive structure layer are respectively the inner sidewalls of the opposite sides of the groove, the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence along the direction away from the substrate.

[0009] In an example embodiment, the groove comprises inner sidewalls of opposite sides, at least one of the inner sidewalls of the opposite sides of the groove comprises a second undercut structure and a third flat surface, the third flat surface is connected to the side of the second undercut structure away from the substrate, the insulating medium layer covers the third flat surface, the insulating medium layer exposes the second undercut structure, the conductive material layer on the insulating medium layer is disconnected from the conductive material layer at the bottom of the groove at the second undercut structure.

[0010] In an example embodiment, the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the inner sidewalls of the opposite sides of the first conductive structure layer and the second conductive structure layer are respectively the inner sidewalls of the opposite sides of the groove, at least one of the inner sidewalls of the opposite sides of the first conductive structure layer comprises the second undercut structure, at least one of the inner sidewalls of the opposite sides of the second conductive structure layer comprises the third flat surface.

[0011] In an example embodiment, the groove comprises inner sidewalls of opposite sides, at least one of the inner sidewalls of the opposite sides of the groove comprises a second undercut structure, the insulating medium layer exposes the second undercut structure, the conductive material layer on the insulating medium layer is disconnected from the conductive material layer at the bottom of the groove at the second undercut structure.

[0012] In an exemplary embodiment, the conductive structure includes one conductive structure layer, the inner side walls of opposite sides of the conductive structure layer are the inner side walls of opposite sides of the recess respectively, and the conductive structure layer includes a first conductive layer and a second conductive layer stacked in sequence along a direction away from the substrate, at least one of the inner side walls of opposite sides of the second conductive layer includes the second undercut structure.

[0013] In an exemplary embodiment, the conductive structure includes outer side walls of opposite sides, the top surface is connected to the outer side walls of opposite sides of the conductive structure away from the substrate side respectively, and at least one of the outer side walls of opposite sides of the conductive structure includes a fourth flat surface, the insulating medium layer covers the fourth flat surface, and the conductive material layer is provided with the insulating medium layer between the fourth flat surface.

[0014] In an exemplary embodiment, the conductive structure includes a first conductive structure layer and a second conductive structure layer stacked in sequence along a direction away from the substrate, the outer side walls of opposite sides of the first conductive structure layer and the second conductive structure layer are the outer side walls of opposite sides of the conductive structure respectively; or, the conductive structure includes a first conductive structure layer and a second conductive structure layer stacked in sequence along a direction away from the substrate, the outer side wall of at least one side of the second conductive structure layer covers the outer side wall of the first conductive structure layer, and the outer side wall of at least one side of the second conductive structure layer includes a fourth flat surface; or, the conductive structure includes one conductive structure layer, the outer side walls of opposite sides of the conductive structure layer are the outer side walls of opposite sides of the conductive structure respectively, and the conductive structure layer includes a first conductive layer and a second conductive layer stacked in sequence along a direction away from the substrate.

[0015] In an exemplary embodiment, the conductive structure includes outer side walls of opposite sides, the top surface is connected to the outer side walls of opposite sides of the conductive structure away from the substrate side respectively, at least one of the outer side walls of opposite sides of the conductive structure includes a first undercut structure and a fourth flat surface, the fourth flat surface is connected to the first undercut structure away from the substrate side, the insulating medium layer covers the fourth flat surface, the insulating medium layer exposes the first undercut structure, the conductive material layer is provided with the insulating medium layer between the fourth flat surface, and the conductive material layer is disconnected at the first undercut structure.

[0016] In an exemplary embodiment, the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along a direction away from the substrate, the outer sidewalls of the opposite sides of the conductive structure are respectively the outer sidewalls of the opposite sides of the conductive structure, at least one of the outer sidewalls of the opposite sides of the first conductive structure layer comprises the first undercut structure, and at least one of the outer sidewalls of the opposite sides of the second conductive structure layer comprises the fourth flat surface.

[0017] In an exemplary embodiment, the conductive structure comprises outer sidewalls of opposite sides, the top surface is connected to the outer sidewalls of the opposite sides of the conductive structure away from the substrate side respectively, at least one of the outer sidewalls of the opposite sides of the conductive structure comprises a first undercut structure, the insulating medium layer exposes the first undercut structure, and the conductive material layer is disconnected at the first undercut structure.

[0018] In an exemplary embodiment, the conductive structure comprises a conductive structure layer, the outer sidewalls of the opposite sides of the conductive structure are respectively the outer sidewalls of the opposite sides of the conductive structure, the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence along a direction away from the substrate, and at least one of the outer sidewalls of the opposite sides of the second conductive layer comprises the first undercut structure.

[0019] In another aspect, the present disclosure also provides a display device comprising any of the display substrates described above.

[0020] Other aspects can become apparent from a review of the drawings and detailed description. BRIEF DESCRIPTION OF DRAWINGS

[0021] The accompanying drawings are included to provide a further understanding of the present disclosure and constitute a part of the specification, which together with the detailed description, serve to explain the technical solutions of the present disclosure, but do not constitute a limitation on the technical solutions of the present disclosure.

[0022] FIG. 1 is a cross-sectional view of a display substrate;

[0023] FIG. 2 is a cross-sectional view of a first partition structure and a second electrode material of a display substrate;

[0024] FIG. 3 is a planar structure schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0025] FIG. 4 is a planar structure schematic diagram of a display area of a display substrate according to the present disclosure;

[0026] FIG. 5 is a cross-sectional structure schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0027] FIG. 6 is a cross-sectional structure schematic diagram of an isolation structure of a display substrate according to an embodiment of the present disclosure;

[0028] FIG. 7 is a schematic diagram showing a substrate after forming a first conductive layer, a second conductive layer, and a third conductive layer in a preparation process of the substrate according to an embodiment of the present disclosure;

[0029] FIG. 8 is a schematic diagram showing a substrate after forming a fourth conductive layer, a fifth conductive layer, and a sixth conductive layer in a preparation process of the substrate according to an embodiment of the present disclosure;

[0030] FIG. 9 is a schematic diagram showing a substrate after etching and removing the third conductive layer, the fourth conductive layer, the fifth conductive layer, and the sixth conductive layer in a preparation process of the substrate according to an embodiment of the present disclosure;

[0031] FIG. 10 is a schematic diagram showing a substrate after forming an insulating medium layer in a preparation process of the substrate according to an embodiment of the present disclosure;

[0032] FIG. 11 is a schematic diagram showing a substrate after forming a first undercut structure in a preparation process of the substrate according to an embodiment of the present disclosure;

[0033] FIG. 12 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0034] FIG. 13 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0035] FIG. 14 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0036] FIG. 15 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0037] FIG. 16 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0038] FIG. 17 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0039] FIG. 18 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure;

[0040] FIG. 19 is a schematic diagram showing another isolation structure of a substrate according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0041] In order to make the objects, technical solutions and advantages of the present disclosure clearer, the following will be used to specifically describe the embodiments of the present disclosure with reference to the drawings. It should be noted that the embodiments can be implemented in a variety of different forms. Those skilled in the art can easily understand that the modes and contents can be changed into various forms without departing from the spirit and scope of the present disclosure. Therefore, the present disclosure should not be interpreted as being limited to the contents described in the following embodiments. The embodiments in the present disclosure and the features in the embodiments can be combined with each other arbitrarily without conflict.

[0042] The proportions of the drawings in the present disclosure can be used as a reference in the actual process, but are not limited thereto. For example, the width-length ratio of the channel, the thickness and spacing of each film layer, and the width and spacing of each signal line can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are also not limited to the number shown in the drawings. The drawings described in the present disclosure are only schematic structural diagrams, and one embodiment of the present disclosure is not limited to the shapes or values shown in the drawings.

[0043] In the present specification, ordinal numbers such as "first", "second", "third", and the like are provided to avoid confusion of components, and are not intended to be limited in terms of quantity.

[0044] In the present specification, for the convenience of description, words indicating the orientation or positional relationship such as "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like are used to describe the positional relationship of the components with reference to the drawings, and are only for the convenience of description of the present specification and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present disclosure. The positional relationship of the components is appropriately changed according to the direction of describing each component. Therefore, it is not limited to the words described in the specification, and can be appropriately changed according to the situation.

[0045] In the present specification, unless specifically defined and limited otherwise, the terms "mount", "connected", "connection" should be interpreted broadly. For example, it can be fixedly connected, or detachably connected, or integrally connected; it can be mechanically connected, or electrically connected; it can be directly connected, or indirectly connected through an intermediate piece, or the communication inside two elements. Those skilled in the art can understand the specific meaning of the above terms in the present disclosure according to the specific circumstances.

[0046] In this specification, a transistor means an element including at least three terminals of a gate electrode, a drain electrode, and a source electrode. The transistor has a channel region between the drain electrode (a drain electrode terminal, a drain region, or a drain electrode) and the source electrode (a source electrode terminal, a source region, or a source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. Note that, in this specification, the channel region means a region where current flows mainly.

[0047] In this specification, the first terminal can be a drain electrode and the second terminal can be a source electrode, or the first terminal can be a source electrode and the second terminal can be a drain electrode. In the case of using a transistor having opposite polarity or in the case where the direction of current changes in circuit operation, the functions of the "source electrode" and the "drain electrode" are sometimes interchanged with each other. Thus, in this specification, the "source electrode" and the "drain electrode" can be interchanged with each other, and the "source terminal" and the "drain terminal" can be interchanged with each other.

[0048] In this specification, "electrically connected" includes the case where components are connected through an element having some function of electricity. The element having some function of electricity is not particularly limited as long as electric signals can be transmitted and received between components to be connected. Examples of the element having some function of electricity include not only an electrode and a wiring but also a switching element such as a transistor, a resistor, an inductor, a capacitor, and another element having some function.

[0049] In this specification, "parallel" means a state where an angle formed between two straight lines is greater than or equal to -10° and less than or equal to 10°, and thus a state where the angle is greater than or equal to -5° and less than or equal to 5° is also included. In addition, "perpendicular" means a state where an angle formed between two straight lines is greater than or equal to 80° and less than or equal to 100°, and thus a state where the angle is greater than or equal to 85° and less than or equal to 95° is also included.

[0050] In this specification, a "film" and a "layer" can be interchanged with each other. For example, a "conductive layer" can be replaced with a "conductive film". Similarly, an "insulating film" can be replaced with an "insulating layer".

[0051] In this specification, a triangle, a rectangle, a trapezoid, a pentagon, or a hexagon is not strictly a triangle, a rectangle, a trapezoid, a pentagon, or a hexagon, and can be an approximately triangle, a rectangle, a trapezoid, a pentagon, or a hexagon. There can be some small deformation due to a tolerance, a rounded corner, a curved side, or the like.

[0052] In this specification, "about" means not strictly limited to the limit, and a value within a range of process and measurement error is allowed.

[0053] FIG. 1 is a sectional view of a display substrate. As shown in FIG. 1, the relevant display substrate includes a display area 100', an encapsulation area 200', and a hole area 300', the hole area 300' being located in the display area 100', and the encapsulation area 200' being located between the display area 100' and the hole area 300', which is an annular area surrounding the hole area 300'. The display area 100' includes, in sequence from the side of the substrate 101' away, a driving circuit layer, a light-emitting structure layer, and an encapsulation structure layer. The light-emitting structure layer includes at least one light-emitting device, and the at least one light-emitting device includes, in sequence from the side of the substrate 101' away, a first electrode, a light-emitting functional layer, and a second electrode 32'; the encapsulation structure layer is provided on the side of the second electrode 32' away from the substrate, and includes, in sequence from the side of the substrate 101' away, a first inorganic encapsulation layer 41', an organic encapsulation layer 43', and a second inorganic encapsulation layer 42'; the encapsulation area 200' can include, in sequence from the side of the display area 100' away, at least one first partition structure 21', at least one barrier wall 23', and at least one second partition structure 22', the second electrode material 32-1' covering the encapsulation area 200' and being interrupted at the at least one first partition structure 21' and the at least one second partition structure 22' to form two parts isolated from each other; the first inorganic encapsulation layer 41', the organic encapsulation layer 43', and the second inorganic encapsulation layer 42' in the encapsulation structure layer all cover the at least one first partition structure 21' and are not interrupted by the at least one first partition structure 21'; the organic encapsulation layer 43' in the encapsulation structure layer extends to the barrier wall 23' and is interrupted by the barrier wall 23', and the barrier wall 23' prevents the organic encapsulation layer 43' from overflowing to the second partition structure 22'; the first inorganic encapsulation layer 41' and the second inorganic encapsulation layer 42' in the encapsulation structure layer extend to the second partition structure 22' and cover the second partition structure 22' and are not interrupted by the second partition structure 22'.

[0054] It has been found by the inventors of the present application that positive ions (such as potassium ions) and water vapor in the environment can enter the encapsulation area 200' from the edge of the hole area 300' along the light-emitting functional layer material, and the second electrode material 32-1' on the encapsulation area 200' will have a negative charge due to incomplete interruption, the negative charge of the second electrode material 32-1' will undergo an electrolytic reaction with the water vapor, the water vapor electrolysis will produce hydroxyl (OH-), and the hydroxyl (OH-) will form a strong alkaline environment with the positive ions and react with the silicon oxide compound in the first inorganic encapsulation layer 41' in the encapsulation structure layer, resulting in the formation of pores or expansion of the first inorganic encapsulation layer 41', reducing the encapsulation effect, accelerating the water vapor immersion, and causing GDSH (black spots at the edge of the hole).

[0055] FIG. 2 is a sectional view of a first partition structure and a second electrode material of a display substrate. FIG. 2 can be an enlarged view of a' in FIG. 1. As shown in FIG. 2, the first partition structure in the related display substrate includes a first conductive layer 21-1', a second conductive layer 21-2', and a third conductive layer 21-3' stacked in sequence away from the substrate, the first conductive layer 21-1' and the third conductive layer 21-3' can be titanium, the second conductive layer 21-2' can be aluminum, the second electrode material 32-1' is disconnected at the undercut structure of the first partition structure 21', forming two parts isolated from each other, wherein the first part of the first partition structure 21' is in contact with the sidewall of the second conductive layer 21-2', the second part of the first partition structure 21' is located on the surface of the third conductive layer 21-3' away from the substrate and in contact with the third conductive layer 21-3', resulting in that the first part and the second part of the first partition structure 21' can be electrically connected through the first partition structure, and the first part of the adjacent first partition structure 21' is electrically connected through the first partition structure, so that the second electrode material 32-1' cannot be completely disconnected.

[0056] The present disclosure provides a display substrate, including a display area, a hole area located in the display area, and an encapsulation area located between the display area and the hole area, the encapsulation area including at least one isolation structure disposed on a substrate and a conductive material layer disposed on a side of the at least one isolation structure away from the substrate, the at least one isolation structure including a conductive structure and an insulating medium layer, the conductive structure including at least a top surface on a side away from the substrate, and the conductive material layer and the top surface being disposed with at least part of the insulating medium layer therebetween.

[0057] The display substrate of the present disclosure is illustrated below by some exemplary embodiments.

[0058] FIG. 3 is a schematic plan view of a display substrate according to an embodiment of the present disclosure. As shown in FIG. 3, in a plane parallel to the display substrate, the display substrate includes a display area 100, an encapsulation area 200, and a hole area 300, the hole area 300 is located in the display area 100, and the encapsulation area 200 is located between the display area 100 and the hole area 300, and is an annular region surrounding the hole area 300. The position of the hole area 300 in the display area 100 is not limited, and the shape is also not limited, which can be an oval as shown in FIG. 3, or a circle or a square, a rhombus, or other polygons.

[0059] In an example embodiment, the display area 100 can include a driving circuit layer disposed on a substrate and a light-emitting structure layer disposed on a side of the driving circuit layer distal to the substrate, the driving circuit layer can include a pixel driving circuit, the pixel driving circuit can include a plurality of transistors and a storage capacitor. The light-emitting structure layer can include a plurality of light-emitting units, the light-emitting unit can include at least a light-emitting device, the light-emitting device can include a first electrode, a light-emitting functional layer, and a second electrode, the first electrode is connected to the pixel driving circuit, the light-emitting functional layer is connected to the first electrode, the second electrode is connected to the light-emitting functional layer, the light-emitting functional layer emits light under the driving of the first electrode and the second electrode. The encapsulation area 200 includes at least one isolation structure, the isolation structure is used to isolate the light-emitting functional layer and the second electrode. The structure film layer in the hole area 300 is removed for mounting various devices, such as a camera and a sensor.

[0060] In an example embodiment, the light-emitting functional layer can include a light-emitting layer (EML) and any one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL).

[0061] FIG. 4 is a schematic diagram of a planar structure of a display area of a display substrate according to the present disclosure. As shown in FIG. 4, the display area of the display substrate can include a plurality of pixel units P arranged in a matrix manner, at least one of the plurality of pixel units P includes a first sub-pixel P1 emitting a first color light, a second sub-pixel P2 emitting a second color light, and a third sub-pixel P3 emitting a third color light, the first sub-pixel P1, the second sub-pixel P2, and the third sub-pixel P3 each include a pixel driving circuit and a light-emitting device. The pixel driving circuit in the sub-pixel is configured to output a corresponding current to the light-emitting device. The light-emitting device in the sub-pixel is connected to the pixel driving circuit of the sub-pixel where the light-emitting device is located, and the light-emitting device is configured to emit light of a corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel where the light-emitting device is located.

[0062] In an example embodiment, the first sub-pixel P1 can be a red sub-pixel emitting a red (R) light, the second sub-pixel P2 can be a blue sub-pixel emitting a blue (B) light, and the third sub-pixel P3 can be a green sub-pixel emitting a green (G) light.

[0063] In an example embodiment, the shape of the sub-pixel can be any one or more of a triangle, a square, a rectangle, a diamond, a trapezoid, a parallelogram, a pentagon, a hexagon, and other polygons, and can be arranged in a horizontal side-by-side manner, a vertical side-by-side manner, an X shape, a cross shape, a triangle shape, a square shape, a diamond shape, or a delta shape, without being limited in the present disclosure.

[0064] FIG. 5 is a schematic diagram of a cross-sectional structure of a display substrate according to an embodiment of the present disclosure. FIG. 5 can be a cross-sectional view of the display substrate along the A-A' direction in FIG. 3. As shown in FIG. 5, the display substrate can include a display area 100, an encapsulation area 200, and a hole area 300. The hole area 300 is located in the display area 100, and the encapsulation area 200 is disposed between the display area 100 and the hole area 300. The encapsulation area 200 is an annular area surrounding the hole area 300. The encapsulation area 200 can include a first partition region 210, a barrier wall region 230, and a second partition region 220, which are sequentially arranged in a direction away from the display area 100.

[0065] In an example embodiment, in a direction perpendicular to the display substrate, the display area 100 of the display substrate can include a first inorganic medium layer 102 disposed on a base 101, a first gate electrode disposed on a side of the first inorganic medium layer 102 away from the base, a first gate insulating layer 103 disposed on a side of the first gate electrode away from the base, a second gate electrode disposed on a side of the first gate insulating layer 103 away from the base, a second gate insulating layer 104 disposed on a side of the second gate electrode away from the base, a second inorganic medium layer 105 disposed on a side of the second gate insulating layer 104 away from the base, a first source-drain electrode layer disposed on a side of the second inorganic medium layer 105 away from the base, a first organic medium layer 106 disposed on a side of the first source-drain electrode layer away from the base, a second source-drain electrode layer disposed on a side of the first organic medium layer 106 away from the base, and a second electrode 51 disposed on a side of the second source-drain electrode layer away from the base. The first source-drain electrode layer includes at least one first source-drain electrode 21, and the second source-drain electrode layer includes at least one second source-drain electrode 22. The first source-drain electrode 21 and the second source-drain electrode 22 each can include a first metal layer, a second metal layer, and a third metal layer stacked in a direction away from the base. In an example, the first metal layer and the third metal layer can be titanium, and the second metal layer can be aluminum.

[0066] In an example embodiment, the display area 100 of the display substrate further includes an encapsulation structure layer disposed on a side of the second electrode 31 away from the base. The encapsulation structure layer includes a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer stacked in a direction away from the base 101. The first inorganic encapsulation layer, the organic encapsulation layer, and the second inorganic encapsulation layer in the encapsulation structure layer each extend to the first partition region 210. The organic encapsulation layer in the encapsulation structure layer extends to the barrier wall region 230 and is blocked by the barrier wall of the barrier wall region 230, thereby preventing the organic encapsulation layer from overflowing to the second partition region 220. The first inorganic encapsulation layer and the second inorganic encapsulation layer in the encapsulation structure layer cover the barrier wall region 230 and extend to the second partition region 220.

[0067] In an exemplary embodiment, in a direction perpendicular to the display substrate, the first partition region 210 of the display substrate can include a first inorganic medium layer 102 disposed on the base 101, a plurality of first elevation layers 31 disposed on a side of the first inorganic medium layer 102 away from the base, a first gate insulating layer 103 disposed on a side of the plurality of first elevation layers 31 away from the base, a plurality of second elevation layers 32 disposed on a side of the first gate insulating layer 103 away from the base, a second gate insulating layer 104 disposed on a side of the second elevation layers 32 away from the base, a second inorganic medium layer 105 disposed on a side of the second gate insulating layer 104 away from the base, a first isolation structure 41 and a second isolation structure 42 disposed on a side of the second inorganic medium layer 105 away from the base, and a conductive material layer 52 disposed on a side of the first isolation structure 41 and the second isolation structure 42 away from the base.

[0068] In an exemplary embodiment, the conductive material layer 52 can be in the same film layer as the second electrode of the display region, and the conductive material layer 52 is made of the same material as the second electrode, and the conductive material layer 52 extends to the part of the second electrode in the encapsulation region 200.

[0069] In an exemplary embodiment, the plurality of first elevation layers 31 are spaced apart along a direction parallel to the base, and the plurality of first elevation layers 31 are disposed corresponding to the first isolation structure 41 and the second isolation structure 42, and the orthographic projection of each first elevation layer 31 on the base 101 overlaps with the orthographic projection of the corresponding first isolation structure 41 or second isolation structure 42 on the base 101, and each first elevation layer 31 can raise the height of the corresponding first isolation structure 41 or second isolation structure 42, and increase the distance between the surface on the side of the corresponding first isolation structure 41 or second isolation structure 42 away from the base and the surface of the base. The plurality of first elevation layers 31 can be in the same film layer as the first gate electrode in the display region 100, and are made of the same material and prepared by the same preparation process, thereby simplifying the process.

[0070] In an exemplary embodiment, the plurality of second elevation layers 32 are spaced apart along a direction parallel to the base, and the plurality of second elevation layers 32 are disposed corresponding to the first isolation structure 41 and the second isolation structure 42, and the orthographic projection of each second elevation layer 32 on the base 101 overlaps with the orthographic projection of the corresponding first isolation structure 41 or second isolation structure 42 on the base 101, and each second elevation layer 32 can raise the height of the corresponding first isolation structure 41 or second isolation structure 42, and increase the distance between the surface on the side of the corresponding first isolation structure 41 or second isolation structure 42 away from the base and the surface of the base. The plurality of second elevation layers 32 can be in the same film layer as the second gate electrode in the display region 100, and are made of the same material and prepared by the same preparation process, thereby simplifying the process.

[0071] In the example embodiment, the first isolation structure 41 and the second isolation structure 42 are both provided with an undercut structure, and the conductive material layer 52 covers the first isolation structure 41 and the second isolation structure 42 and is broken at the undercut structure of the first isolation structure 41 and the second isolation structure 42, forming two mutually disconnected parts.

[0072] In the example embodiment, the first isolation structure 41 can include a conductive structure and an insulating medium layer 60 stacked in sequence along the direction away from the substrate 101, and at least part of the insulating medium layer 60 is arranged on the side surface of the conductive structure away from the substrate 101 and in contact with the conductive structure. The conductive structure is provided with an undercut structure on at least part of the side surface, and the conductive material layer 52 is broken at the undercut structure, forming two mutually disconnected material parts, wherein at least part of the conductive material layer 52 is located on the surface of the insulating medium layer 60 away from the substrate 101, and the insulating medium layer 60 isolates the conductive material layer 52 from the conductive structure.

[0073] In the example embodiment, the second isolation structure 42 can be located in the same film layer as the first source / drain electrode 21 or the second source / drain electrode 22 and be made of the same material through the same preparation process, thereby simplifying the process. For example, the second isolation structure 42 includes a first medium layer, a second medium layer and a third medium layer arranged in sequence along the direction away from the substrate, and the side surface of the second medium layer is recessed compared with the side surfaces of the first medium layer and the third medium layer, forming an undercut structure.

[0074] In the example embodiment, a plurality of second isolation structures 42 are distributed at intervals along the direction parallel to the substrate, and at least one first isolation structure 41 is located on the side of the plurality of second isolation structures 42 close to the barrier wall region 230, and at least one first isolation structure 41 can be located in the edge region of the first partition region 210 close to the barrier wall region 230.

[0075] The example embodiment of the present disclosure shows that the substrate is simplified by arranging the first isolation structure 41 in the edge region of the first partition region 210 close to the barrier wall region 230.

[0076] In some embodiments, the first isolation structure can be located between adjacent second isolation structures; or the first isolation structure can be located on the side of the plurality of second isolation structures close to the display region.

[0077] In an example embodiment, the barrier wall region 230 of the display substrate can include a first inorganic medium layer 102 disposed on the base 101, a first gate insulating layer 103 disposed on a side of the first inorganic medium layer 102 distal from the base, a second gate insulating layer 104 disposed on a side of the first gate insulating layer 103 distal from the base, a second inorganic medium layer 105 disposed on a side of the second gate insulating layer 104 distal from the base, a barrier wall 43 disposed on a side of the second inorganic medium layer 105 distal from the base, the barrier wall 43 configured to block overflow of the organic encapsulation layer in the encapsulation structure layer, and prevent the organic encapsulation layer in the encapsulation structure layer from extending to the second partition region 220.

[0078] In an example embodiment, the second partition region 220 of the display substrate can include a first inorganic medium layer 102 disposed on the base 101, a plurality of third elevation layers 33 disposed on a side of the first inorganic medium layer 102 distal from the base, a first gate insulating layer 103 disposed on a side of the plurality of third elevation layers 33 distal from the base, a plurality of fourth elevation layers 34 disposed on a side of the first gate insulating layer 103 distal from the base, a second gate insulating layer 104 disposed on a side of the plurality of fourth elevation layers 34 distal from the base, a second inorganic medium layer 105 disposed on a side of the second gate insulating layer 104 distal from the base, a plurality of third isolation structures 43 disposed on a side of the second inorganic medium layer 105 distal from the base, and a conductive material layer 52 disposed on a side of the plurality of third isolation structures 43 distal from the base.

[0079] In an example embodiment, the plurality of third elevation layers 33 are spaced apart along a direction parallel to the base, the plurality of third elevation layers 33 are disposed one-to-one corresponding to the plurality of second isolation structures 42, a projection of each third elevation layer 33 on the base 101 overlaps a projection of a corresponding second isolation structure 42 on the base 101, each third elevation layer 33 can elevate a height of the second isolation structure 42, and increase a distance between a surface of the second isolation structure 42 distal from the base and a surface of the base. The plurality of third elevation layers 33 can be located in a same film layer as the first gate electrode in the display region 100, be made of a same material, and be prepared by a same preparation process, thereby simplifying a process.

[0080] In an example embodiment, the plurality of fourth elevation layers 34 are spaced apart along a direction parallel to the base, the plurality of fourth elevation layers 34 are disposed one-to-one corresponding to the plurality of second isolation structures 42, a projection of each fourth elevation layer 34 on the base 101 overlaps a projection of a corresponding second isolation structure 42 on the base 101, each fourth elevation layer 34 can elevate a height of the second isolation structure 42, and increase a distance between a surface of the second isolation structure 42 distal from the base and a surface of the base. The plurality of fourth elevation layers 34 can be located in a same film layer as the second gate electrode in the display region 100, be made of a same material, and be prepared by a same preparation process, thereby simplifying a process.

[0081] In an example embodiment, the plurality of third isolation structures 43 are spaced along the parallel substrate direction. The third isolation structures 43 can be formed in the same film layer as the first source / drain electrodes 21 or the second source / drain electrodes 22, using the same material through the same preparation process, thereby simplifying the process. For example, the third isolation structures 43 include a fourth dielectric layer, a fifth dielectric layer, and a sixth dielectric layer arranged in sequence along the direction away from the substrate, the side surface of the fifth dielectric layer is recessed compared to the side surfaces of the fourth dielectric layer and the sixth dielectric layer, forming an undercut structure.

[0082] In some embodiments, the at least one first isolation structure is located in the second partition region. The at least one first isolation structure is located on the side of the plurality of third isolation structures close to the barrier region, and the at least one first isolation structure can be located in the edge region of the side of the second partition region close to the barrier region.

[0083] The display substrate of the embodiments of the present disclosure shows that by arranging the first isolation structure in the edge region of the side of the second partition region close to the barrier region, the first isolation structure is close to the display region and away from the hole region, so as to ensure the power-off effect.

[0084] In some embodiments, the first isolation structure can be located between adjacent third isolation structures; or, the first isolation structure can be located on the side of the plurality of third isolation structures away from the barrier region.

[0085] FIG. 6 is a schematic diagram of a cross-sectional structure of an isolation structure of a display substrate according to an embodiment of the present disclosure. The isolation structure of the embodiments of the present disclosure can be an enlarged view of the first isolation structure in FIG. 5. In an example embodiment, as shown in FIG. 6, the first isolation structure 41 can include a conductive structure and an insulating dielectric layer 60 stacked in sequence along the direction away from the substrate 101, the surface of the conductive structure close to the substrate is in contact with the second inorganic dielectric layer 105, the top surface of the conductive structure away from the substrate is in contact with the surface of the insulating dielectric layer 60 close to the substrate, and the top surface of the insulating dielectric layer 60 away from the substrate is provided with a conductive material layer 52.

[0086] In an example embodiment, the conductive structure can be formed in the same film layer as at least part of the film layer of at least one of the first source / drain electrodes and the second source / drain electrodes in the display region, using the same material through the same preparation process, thereby simplifying the process.

[0087] In an example embodiment, the insulating medium layer 60 can be an organic material, and the insulating medium layer 60 can be in the same film layer as at least one of the first organic medium layer and the second organic medium layer in the display area, and be made of the same material by the same manufacturing process, thereby simplifying the process. For example, the insulating medium layer 60 can be in the same film layer as the second organic medium layer in the display area, and be made of the same material by the same manufacturing process.

[0088] In some embodiments, the first isolation structure can include a plurality of conductive structures, for example, two conductive structures, three conductive structures, four conductive structures, etc., stacked in sequence along the direction away from the substrate, which will not be repeated here.

[0089] In an example embodiment, the conductive structure includes a conductive structure layer 61 including a first conductive layer 61-1 and a second conductive layer 61-2 stacked in sequence along the direction away from the substrate 101, the second conductive layer 61-2 being disposed on the side surface of the first conductive layer 61-1 away from the substrate 101, and the thickness of the second conductive layer 61-2 being greater than the thickness of the first conductive layer 61-1.

[0090] In an example embodiment, the first conductive layer 61-1 can be a metal, for example, the first conductive layer 61-1 can be titanium.

[0091] In an example embodiment, the first conductive layer 61-1 can be in the same film layer as the first metal layer of the first source / drain electrode or the second source / drain electrode, and be made of the same material by the same manufacturing process, thereby simplifying the process. For example, the first conductive layer 61-1 can be in the same film layer as the first metal layer of the first source / drain electrode, and be made of the same material by the same manufacturing process.

[0092] In an example embodiment, the second conductive layer 61-2 can be a metal, for example, the second conductive layer 61-2 can be aluminum.

[0093] In an example embodiment, the second conductive layer 61-2 can be in the same film layer as the second metal layer of the first source / drain electrode or the second source / drain electrode, and be made of the same material by the same manufacturing process, thereby simplifying the process. For example, the second conductive layer 61-2 can be in the same film layer as the second metal layer of the first source / drain electrode, and be made of the same material by the same manufacturing process.

[0094] In some embodiments, the conductive structure layer can include one conductive layer, or a number of conductive layers other than two, for example, three conductive layers, four conductive layers, five conductive layers, etc., stacked in sequence along the direction away from the substrate, which will not be repeated here.

[0095] In an example embodiment, the second conductive layer 61-2 includes a first outer sidewall 61-2-1, a second outer sidewall 61-2-2, and a top surface 61-2-3, the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 are located on opposite sides of the second conductive layer 61-2 in a direction parallel to the substrate, the extensions of the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 both cross the plane on which the substrate lies, the top surface 61-2-3 of the second conductive layer 61-2 is located on the side of the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2 away from the substrate, and is connected to the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2, and the top surface 61-2-3 of the second conductive layer 61-2 is parallel to the substrate.

[0096] In an example embodiment, the insulating medium layer 60 is arranged on the side of the top surface 61-2-3 of the second conductive layer 61-2 away from the substrate and in contact with the top surface 61-2-3, the orthographic projection of the insulating medium layer 60 on the substrate overlaps the orthographic projection of the top surface 61-2-3 of the second conductive layer 61-2 on the substrate, for example, the orthographic projection of the insulating medium layer 60 on the substrate covers the orthographic projection of the top surface 61-2-3 of the second conductive layer 61-2 on the substrate. At least part of the insulating medium layer 60 is arranged between the conductive material layer 52 and the top surface 61-2-3 of the second conductive layer 61-2, so as to insulate the conductive material layer 52 from the top surface 61-2-3 of the second conductive layer 61-2, realize the lateral disconnection of the conductive material layer 52, and thus achieve the effect of completely insulating the conductive material layer 52.

[0097] In an example embodiment, the top surface 61-2-3 of the second conductive layer 61-2 includes a groove 63, and a first flat area 64 and a second flat area 65 located on opposite sides of the groove 63 in the first direction D1, the first flat area 64 and the second flat area 65 are parallel to the substrate, the groove 63 is recessed in the direction close to the substrate, the groove 63 can penetrate the second conductive layer 61-2 and the first conductive layer 61-1, and expose the second inorganic medium layer 105, the bottom of the groove 63 is the surface of the second inorganic medium layer 105 away from the substrate, and at least part of the insulating medium layer 60 fills the groove 63 and is in contact with the sidewall and the bottom of the groove 63.

[0098] In the example embodiment, the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2 are both recessed compared to the side of the insulating medium layer 60, forming a first undercut structure 71. The insulating medium layer 60 exposes the first undercut structure 71. The conductive material layer 52 is broken at the first undercut structure 71, forming a first material portion and a second material portion, the first material portion being located on the surface of the second inorganic medium layer 105 away from the substrate, the second material portion being located on the surface of the insulating medium layer 60 away from the substrate, the first material portion and the second material portion being disconnected from each other by the first undercut structure 71, the inner wall of the first undercut structure 71 being free of the conductive material layer 52, the conductive material layer 52 not being in contact with the first undercut structure 71, realizing the longitudinal disconnection of the conductive material layer 52, so as to achieve the effect of complete insulation of the conductive material layer 52.

[0099] The preparation process of the first isolation structure of the display substrate is exemplarily described below. The "patterning process" in the present disclosure includes coating photoresist, mask exposure, development, etching, stripping photoresist and the like for metal materials, inorganic materials or transparent conductive materials, and includes coating organic materials, mask exposure and development and the like for organic materials. The deposition can adopt any one or more of sputtering, evaporation, chemical vapor deposition, the coating can adopt any one or more of spraying, spin coating and inkjet printing, and the etching can adopt any one or more of dry etching and wet etching, which are not limited in the present disclosure. The "thin film" refers to a thin film of a certain material made on a substrate by deposition, coating or other processes. If the "thin film" does not need to be patterned during the entire manufacturing process, the "thin film" can also be referred to as a "layer". If the "thin film" needs to be patterned during the entire manufacturing process, it is referred to as a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern". The "A and B are disposed in the same layer" in the present disclosure means that A and B are formed at the same time by the same patterning process. The "thickness" of the film layer is the size of the film layer in the direction perpendicular to the display substrate. In the example embodiment of the present disclosure, "the orthographic projection of B is within the orthographic projection of A" or "the orthographic projection of A contains the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary of the orthographic projection of A, or the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0100] In the example embodiment, the preparation process of the first isolation structure of the display substrate can include the following operations.

[0101] (101) forming a first conductive layer, a second conductive layer and a third conductive layer.

[0102] In the example embodiment, forming the first conductive layer, the second conductive layer and the third conductive layer can include: sequentially depositing a first metal thin film, a second metal thin film and a third metal thin film on the second inorganic medium layer 105, and forming the first conductive layer 61-1 from the first metal thin film, the second conductive layer 61-2 from the second metal thin film and the third conductive layer 61-3 from the third metal thin film by a patterning process; the first conductive layer 61-1, the second conductive layer 61-2 and the third conductive layer 61-3 are sequentially stacked along the direction away from the substrate, and the first conductive layer 61-1, the second conductive layer 61-2 and the third conductive layer 61-3 are provided with a groove 63, the groove 63 extends from the surface of the third conductive layer 61-3 away from the substrate, sequentially penetrates the third conductive layer 61-3, the second conductive layer 61-2 and the first conductive layer 61-1, and extends to the second inorganic medium layer 105, as shown in FIG. 7.

[0103] In the example embodiment, the first conductive layer 61-1 can be in the same film layer as the first metal layer of the first source-drain electrode and be prepared by the same preparation process using the same metal thin film; the second conductive layer 61-2 can be in the same film layer as the second metal layer of the first source-drain electrode and be prepared by the same preparation process using the same metal thin film; and the third conductive layer 61-3 can be in the same film layer as the third metal layer of the first source-drain electrode and be prepared by the same preparation process using the same metal thin film.

[0104] (102) forming a fourth conductive layer, a fifth conductive layer and a sixth conductive layer.

[0105] In the example embodiment, forming the fourth conductive layer, the fifth conductive layer and the sixth conductive layer can include: sequentially depositing a fourth metal thin film, a fifth metal thin film and a sixth metal thin film on the substrate formed with the aforementioned pattern, and forming the fourth conductive layer 62-1 from the fourth metal thin film, the fifth conductive layer 62-2 from the fifth metal thin film and the sixth conductive layer 62-3 from the sixth metal thin film by a patterning process; and the surface of the sixth conductive layer 62-3 away from the substrate forms a recessed area at the groove 63, as shown in FIG. 8.

[0106] In the example embodiment, the fourth conductive layer 62-1 can be in the same film layer as the first metal layer of the second source-drain electrode and be prepared by the same preparation process using the same metal thin film; the fifth conductive layer 62-2 can be in the same film layer as the second metal layer of the second source-drain electrode and be prepared by the same preparation process using the same metal thin film; and the sixth conductive layer 62-3 can be in the same film layer as the third metal layer of the second source-drain electrode and be prepared by the same preparation process using the same metal thin film.

[0107] (103) etching to remove the third conductive layer, the fourth conductive layer, the fifth conductive layer and the sixth conductive layer.

[0108] In an example embodiment, etching to remove the third conductive layer, the fourth conductive layer, the fifth conductive layer and the sixth conductive layer can include: on the substrate with the aforementioned pattern formed, etching to remove the sixth conductive layer, the fifth conductive layer, the fourth conductive layer and the third conductive layer by an etching process, exposing the second conductive layer 61-2 and the groove 63, as shown in FIG. 9.

[0109] (104) forming an insulating medium layer.

[0110] In an example embodiment, forming the insulating medium layer can include: on the substrate with the aforementioned pattern formed, depositing an organic medium film on the side of the second conductive layer 61-2 away from the substrate, and forming the organic medium film into the insulating medium layer 60 by a patterning process, the insulating medium layer 60 being disposed on the surface of the side of the second conductive layer 61-2 away from the substrate, at least part of the insulating medium layer 60 filling the groove 63, the insulating medium layer 60 exposing the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2, as shown in FIG. 10.

[0111] (105) forming a first undercut structure.

[0112] In an example embodiment, forming the first undercut structure can include: on the substrate with the aforementioned pattern formed, etching the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2, the second conductive layer 61-2 having a different etching selectivity ratio from the first conductive layer 61-1, so that the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2 are recessed respectively compared with the first conductive layer 61-1 and the side of the insulating medium layer 60, forming the first undercut structure 71, as shown in FIG. 11. Wherein, the first conductive layer 61-1, the second conductive layer 61-2 and the insulating medium layer 60 form a first isolation structure.

[0113] FIG. 12 is a schematic view of another isolation structure of a display substrate according to embodiments of the present disclosure, which can be an enlarged view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 12, the first isolation structure according to embodiments of the present disclosure is substantially the same as the isolation structure shown in FIG. 6, except that the first isolation structure 41 according to embodiments of the present disclosure includes a conductive structure and an insulating medium layer 60 stacked in turn along a direction away from the substrate 101, the conductive structure includes a conductive structure layer 61 including a first conductive layer 61-1 and a second conductive layer 61-2 stacked in turn along a direction away from the substrate 101, the second conductive layer 61-2 is disposed on a side surface of the first conductive layer 61-1 away from the substrate 101, and the thickness of the second conductive layer 61-2 is greater than the thickness of the first conductive layer 61-1. The second conductive layer 61-2 includes a first outer sidewall 61-2-1, a second outer sidewall 61-2-2, and a top surface 61-2-3, the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 are located on opposite sides of the second conductive layer 61-2 in a direction parallel to the substrate, the extension lines of the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 both intersect the plane of the substrate, and the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 are both fourth flat surfaces; the top surface 61-2-3 of the second conductive layer 61-2 is disposed on the side of the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2 away from the substrate, and is connected to the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2, and the top surface 61-2-3 of the second conductive layer 61-2 is parallel to the substrate.

[0114] In an exemplary embodiment, the top surface of the second conductive layer 61-2 includes a groove 63, and a first flat area 64 and a second flat area 65 located on opposite sides of the groove 63 in the first direction D1, the first flat area 64 and the second flat area 65 are both parallel to the substrate, and the groove 63 is recessed along a direction close to the substrate; the insulating medium layer 60 covers the first flat area 64 and the second flat area 65, covers the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 of the second conductive layer 61-2, and covers the outer sidewalls of the first conductive layer 61-1 on opposite sides in the first direction D1; and the insulating medium layer 60 exposes the groove 63.

[0115] In the example embodiment, the groove 63 of the second conductive layer 61-2 includes a first inner sidewall 63-1 and a second inner sidewall 63-2, which are located on opposite sides of the groove 63 in the first direction D1, and are both recessed compared to the side surface of the insulating medium layer 60, forming a second undercut structure 72. The insulating medium layer 60 is exposed to the second undercut structure 72 without contacting the second undercut structure 72. The conductive material layer 52 is broken at the second undercut structure 72, forming a third material portion and a fourth material portion, the third material portion is located on the surface of the insulating medium layer 60 away from the substrate, and the fourth material portion is located at the bottom of the groove 63, the third material portion and the fourth material portion are disconnected from each other by the second undercut structure 72, and the inner wall of the second undercut structure 72 is not covered by the conductive material layer 52, and the conductive material layer 52 is not in contact with the first inner sidewall 63-1 and the second inner sidewall 63-2, realizing the longitudinal power-off of the conductive material layer 52, and achieving the effect of complete insulation of the conductive material layer 52.

[0116] FIG. 13 is a schematic diagram of a cross-sectional structure of another isolation structure of a substrate according to an embodiment of the present disclosure. The isolation structure of the present embodiment can be a magnified view of the first isolation structure in FIG. 5. In the example embodiment, as shown in FIG. 13, the first isolation structure of the present embodiment is basically the same as the isolation structure shown in FIG. 6, except that the first isolation structure 41 of the present embodiment includes a conductive structure and an insulating medium layer 60 stacked in turn away from the substrate 101, the conductive structure includes a conductive structure layer 61, which includes a first conductive layer 61-1 and a second conductive layer 61-2 stacked in turn away from the substrate 101, the second conductive layer 61-2 is arranged on the surface of the first conductive layer 61-1 away from the substrate 101, and the thickness of the second conductive layer 61-2 is greater than the thickness of the first conductive layer 61-1. The second conductive layer 61-2 includes a top surface 61-2-3 away from the substrate 101, and a first outer sidewall 61-2-1 and a second outer sidewall 61-2-2 located on opposite sides of the second conductive layer 61-2 in the first direction D1, and the top surface 61-2-3 of the second conductive layer 61-2 is parallel to the substrate and connected to the first outer sidewall 61-2-1 and the second outer sidewall 61-2-2 away from the substrate.

[0117] In the example embodiment, the first outer sidewall 61-2-1 is a fourth flat surface, and the second outer sidewall 61-2-2 is recessed relative to the side surface of the insulating medium layer 60, forming a first undercut structure 71. The insulating medium layer 60 covers the top surface 61-2-3 and the first outer sidewall 61-2-1, and the conductive material layer 52 is isolated from the top surface 61-2-3 and the first outer sidewall 61-2-1 by the insulating medium layer 60, and the insulating medium layer 60 exposes the first undercut structure 71. The conductive material layer 52 is broken at the first undercut structure 71, forming a first material portion and a second material portion, which are disconnected from each other by the first undercut structure 71. The inner wall of the first undercut structure 71 is not covered by the conductive material layer 52, and the conductive material layer 52 is not in contact with the second outer sidewall 61-2-2, so that the conductive material layer 52 is insulated from the second outer sidewall 61-2-2, achieving the effect of completely insulating the conductive material layer 52.

[0118] FIG. 14 is a schematic diagram of a cross-sectional structure of another isolation structure of a substrate according to an embodiment of the present disclosure. The isolation structure of the present embodiment can be a magnified view of the first isolation structure in FIG. 5. In the example embodiment, as shown in FIG. 14, the first isolation structure of the present embodiment is basically the same as the isolation structure shown in FIG. 6, except that the first isolation structure 41 of the present embodiment includes a conductive structure and an insulating medium layer 60 stacked in the direction away from the substrate 101 in sequence, and the conductive structure includes a first conductive structure layer 61 and a second conductive structure layer 62 stacked in the direction away from the substrate 101 in sequence, and the first conductive structure layer 61 is disposed on the surface of the second conductive structure layer 62 away from the substrate. The first conductive structure layer 61 includes a first conductive layer 61-1, a second conductive layer 61-2, and a third conductive layer 61-3 stacked in the direction away from the substrate 101 in sequence, and the thickness of the second conductive layer 61-2 is greater than the thickness of the first conductive layer 61-1, and the thickness of the second conductive layer 61-2 is greater than the thickness of the third conductive layer 61-3. The second conductive structure layer 62 includes a fourth conductive layer 62-1, a fifth conductive layer 62-2, and a sixth conductive layer 62-3 stacked in the direction away from the substrate 101 in sequence, and the thickness of the fifth conductive layer 62-2 is greater than the thickness of the fourth conductive layer 62-1, and the thickness of the fifth conductive layer 62-2 is greater than the thickness of the sixth conductive layer 62-3.

[0119] In the example embodiment, the conductive structure includes outer sidewalls on opposite sides in the first direction D1, and the outer sidewalls on opposite sides of the conductive structure in the first direction D1 are both fourth flat surfaces 67, i.e., the outer sidewalls on opposite sides of the first conductive structure layer 61 and the second conductive structure layer 62 in the first direction D1 are both fourth flat surfaces 67. At least part of the insulating medium layer 60 covers the outer sidewalls of the conductive structure on opposite sides in the first direction D1.

[0120] In the example embodiment, the outer side walls of the conductive structure on opposite sides of the first direction D1 are formed by the outer side walls of the first conductive layer 61-1, the second conductive layer 61-2, and the third conductive layer 61-3 in the first conductive structure layer 61 on opposite sides of the first direction D1, and the outer side walls of the fourth conductive layer 62-1, the fifth conductive layer 62-2, and the sixth conductive layer 62-3 in the second conductive structure layer 62 on opposite sides of the first direction D1.

[0121] In the example embodiment, the conductive structure includes a top surface on the side away from the substrate, the top surface of the conductive structure is connected to the outer side walls of the conductive structure on opposite sides of the first direction D1 away from the substrate, and the top surface of the conductive structure is the top surface of the sixth conductive layer 62-3 away from the substrate. The top surface of the conductive structure includes a groove 63 and a first flat area 64 and a second flat area 65 on opposite sides of the first direction D1 of the groove 63, the first flat area 64 and the second flat area 65 are parallel to the substrate, the groove 63 is recessed towards the substrate, and the groove 63 is formed by the surface of the sixth conductive layer 62-3 away from the substrate, sequentially penetrating the sixth conductive layer 62-3, the fifth conductive layer 62-2, the fourth conductive layer 62-1, the third conductive layer 61-3, and extending to the second conductive layer 61-2, and the bottom of the groove 63 is the second conductive layer 61-2. The groove 63 includes inner side walls on opposite sides of the first direction D1, and the inner side walls of the groove 63 on opposite sides of the first direction D1 each include a third flat surface 66 and a second undercut structure 72, the third flat surface 66 is connected to the second undercut structure 72 away from the substrate, the insulating medium layer 60 covers the third flat surface 66, and the insulating medium layer 60 exposes the second undercut structure 72. The conductive material layer and the third flat surface 66 are provided with the insulating medium layer 60, and the conductive material layer on the insulating medium layer 60 is disconnected from the conductive material layer at the bottom of the groove 63 at the second undercut structure 72.

[0122] In the example embodiment, the inner side walls of the first conductive structure layer 61 and the second conductive structure layer 62 on the opposite sides in the first direction D1 are the inner side walls of the groove 63 on the opposite sides in the first direction D1, i.e., the inner side walls of the second conductive layer 61-2 and the third conductive layer 61-3 in the first conductive structure layer 61 on the opposite sides in the first direction D1 and the inner side walls of the fourth conductive layer 62-1, the fifth conductive layer 62-2 and the sixth conductive layer 62-3 in the second conductive structure layer 62 on the opposite sides in the first direction D1 form the inner side walls of the groove 63 on the opposite sides in the first direction D1.

[0123] In the example embodiment, the inner side walls of the fourth conductive layer 62-1, the fifth conductive layer 62-2 and the sixth conductive layer 62-3 in the second conductive structure layer 62 on the opposite sides in the first direction D1 and the inner side walls of the third conductive layer 61-3 in the first conductive structure layer 61 on the opposite sides in the first direction D1 are the third flat surfaces 66; the inner side walls of the second conductive layer 61-2 on the opposite sides in the first direction D1 are recessed compared to the third flat surfaces 66, forming the second undercut structure 72.

[0124] In the example embodiment, the first conductive layer 61-1 can be in the same film layer as the first metal layer of the first source / drain electrode, and is prepared by the same preparation process using the same material, thereby simplifying the process. The first conductive layer 61-1 can be titanium.

[0125] In the example embodiment, the second conductive layer 61-2 can be in the same film layer as the second metal layer of the first source / drain electrode, and is prepared by the same preparation process using the same material, thereby simplifying the process. The second conductive layer 61-2 can be aluminum.

[0126] In the example embodiment, the third conductive layer 61-3 can be in the same film layer as the third metal layer of the first source / drain electrode, and is prepared by the same preparation process using the same material, thereby simplifying the process. The third conductive layer 61-3 can be titanium.

[0127] In the example embodiment, the fourth conductive layer 62-1 can be in the same film layer as the first metal layer of the second source / drain electrode, and is prepared by the same preparation process using the same material, thereby simplifying the process. The fourth conductive layer 62-1 can be titanium.

[0128] In the example embodiment, the fifth conductive layer 62-2 can be in the same film layer as the second metal layer of the second source / drain electrode, and is prepared by the same preparation process using the same material, thereby simplifying the process. The fifth conductive layer 62-2 can be aluminum.

[0129] In an exemplary embodiment, the sixth conductive layer 62-3 can be located in the same film layer as the third metal layer of the second source-drain electrode, and is made of the same material through the same preparation process, thereby simplifying the process. The sixth conductive layer 62-3 can be titanium.

[0130] FIG. 15 is a schematic diagram of a cross-sectional structure of another isolation structure of a substrate according to an embodiment of the present disclosure. The isolation structure of the present embodiment can be a magnified view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 15, the first isolation structure of the present embodiment is basically the same as the isolation structure shown in FIG. 14, except that the outer sidewalls of the second conductive structure layer 62 on the opposite sides in the first direction D1 cover the outer sidewalls of the first conductive structure layer 61 on the opposite sides in the first direction D1, the outer sidewalls of the second conductive structure layer 62 on the opposite sides in the first direction D1 are the outer sidewalls of the conductive structure on the opposite sides in the first direction D1, and the outer sidewalls of the second conductive structure layer 62 on the opposite sides in the first direction D1 are both stepped. At least part of the insulating medium layer 60 covers the outer sidewalls of the second conductive structure layer 62 on the opposite sides in the first direction D1.

[0131] FIG. 16 is a schematic diagram of a cross-sectional structure of another isolation structure of a substrate according to an embodiment of the present disclosure. The isolation structure of the present embodiment can be a magnified view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 16, the first isolation structure of the present embodiment is basically the same as the isolation structure shown in FIG. 14, except that the inner sidewalls of the groove 63 on the opposite sides in the first direction D1 are both third flat surfaces 66, i.e., the inner sidewalls of the first conductive structure layer 61 and the second conductive structure layer 62 on the opposite sides in the first direction D1 are both third flat surfaces 66. At least part of the insulating medium layer 60 fills the groove 63, and at least part of the insulating medium layer 60 covers the inner sidewalls of the groove 63 on the opposite sides in the first direction D1. The outer sidewalls of the conductive structure on the opposite sides in the first direction D1 include the fourth flat surface 67 and the first undercut structure 71, and the fourth flat surface 67 is connected to the first undercut structure 71 away from the substrate.

[0132] In an exemplary embodiment, the outer sidewalls of the fourth conductive layer 62-1, the fifth conductive layer 62-2, and the sixth conductive layer 62-3 in the second conductive structure layer 62 on the opposite sides in the first direction D1, and the outer sidewalls of the third conductive layer 61-3 of the first conductive structure layer 61 on the opposite sides in the first direction D1 are all fourth flat surfaces 67, and the outer sidewalls of the second conductive layer 61-2 on the opposite sides in the first direction D1 are all recessed compared with the fourth flat surfaces 67, forming the first undercut structure 71.

[0133] In an exemplary embodiment, the insulating medium layer 60 covers the fourth flat surface 67, and the insulating medium layer 60 exposes the first undercut structure 71.

[0134] FIG. 17 is a schematic view of a cross-sectional structure of another isolation structure of a substrate according to embodiments of the present disclosure, which can be a magnified view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 17, the first isolation structure according to embodiments of the present disclosure is substantially the same as the isolation structure shown in FIG. 16, except that the inner sidewalls of the second conductive structure layer 62 on opposite sides in the first direction D1 cover the inner sidewalls of the first conductive structure layer 61 on opposite sides in the first direction D1, respectively, the inner sidewalls of the second conductive structure layer 62 on opposite sides in the first direction D1 are the inner sidewalls of the groove 63 on opposite sides in the first direction D1, respectively, and the inner sidewalls of the second conductive structure layer 62 on opposite sides in the first direction D1 are stepped. At least part of the insulating medium layer 60 covers the inner sidewalls of the second conductive structure layer 62 on opposite sides in the first direction D1.

[0135] FIG. 18 is a schematic view of a cross-sectional structure of another isolation structure of a substrate according to embodiments of the present disclosure, which can be a magnified view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 18, the first isolation structure according to embodiments of the present disclosure is substantially the same as the isolation structure shown in FIG. 13, except that the first isolation structure 41 according to embodiments of the present disclosure includes conductive structures and the insulating medium layer 60 stacked in the direction away from the substrate 101 in sequence, the conductive structures include the first conductive structure layer 61 and the second conductive structure layer 62 stacked in the direction away from the substrate 101 in sequence, and the first conductive structure layer 61 is disposed on the surface of the second conductive structure layer 62 away from the substrate. The first conductive structure layer 61 includes the first conductive layer 61-1, the second conductive layer 61-2, and the third conductive layer 61-3 stacked in the direction away from the substrate 101 in sequence, the thickness of the second conductive layer 61-2 is greater than the thickness of the first conductive layer 61-1, and the thickness of the second conductive layer 61-2 is greater than the thickness of the third conductive layer 61-3. The second conductive structure layer 62 includes the fourth conductive layer 62-1, the fifth conductive layer 62-2, and the sixth conductive layer 62-3 stacked in the direction away from the substrate 101 in sequence, the thickness of the fifth conductive layer 62-2 is greater than the thickness of the fourth conductive layer 62-1, and the thickness of the fifth conductive layer 62-2 is greater than the thickness of the sixth conductive layer 62-3.

[0136] In an exemplary embodiment, the outer sidewall of the conductive structure on the side opposite to the first direction D1 is a fourth flat surface 67, i.e., the outer sidewall of the first conductive layer 61-1, the second conductive layer 61-2 and the third conductive layer 61-3 in the first conductive structure layer 61, and the outer sidewall of the fourth conductive layer 62-1, the fifth conductive layer 62-2 and the sixth conductive layer 62-3 in the second conductive structure layer 62 are all fourth flat surfaces 67, and the insulating medium layer 60 covers the outer sidewall of the conductive structure on the side opposite to the first direction D1.

[0137] In an exemplary embodiment, the outer sidewall of the conductive structure on the side of the first direction D1 includes a fourth flat surface 67 and a first undercut structure 71, and the fourth flat surface 67 is connected to the first undercut structure 71 away from the side of the substrate. The outer sidewall of the fourth conductive layer 62-1, the fifth conductive layer 62-2 and the sixth conductive layer 62-3 in the second conductive structure layer 62 on the side of the first direction D1, and the outer sidewall of the third conductive layer 61-3 of the first conductive structure layer 61 on the side of the first direction D1 are all fourth flat surfaces 67, and the outer sidewall of the second conductive layer 61-2 on the side of the first direction D1 is recessed compared to the fourth flat surface 67, forming the first undercut structure 71. The insulating medium layer 60 covers the fourth flat surface 67 of the conductive structure on the side of the first direction D1, and the insulating medium layer 60 exposes the first undercut structure 71.

[0138] FIG. 19 is a schematic diagram of a cross-sectional structure of another isolation structure of a display substrate according to an embodiment of the present disclosure. The isolation structure of the present embodiment can be a magnified view of the first isolation structure in FIG. 5. In an exemplary embodiment, as shown in FIG. 19, the first isolation structure of the present embodiment is basically the same as the isolation structure shown in FIG. 18, except that the outer sidewall of the second conductive structure layer 62 on the side opposite to the first direction D1 covers the outer sidewall of the first conductive structure layer 61 on the side opposite to the first direction D1, the outer sidewall of the second conductive structure layer 62 on the side opposite to the first direction D1 is the outer sidewall of the conductive structure on the side opposite to the first direction D1, and the outer sidewall of the second conductive structure layer 62 on the side opposite to the first direction D1 is stepped. At least part of the insulating medium layer 60 covers the outer sidewall of the second conductive structure layer 62 on the side opposite to the first direction D1.

[0139] In another aspect, the present disclosure also provides a method for manufacturing a display substrate, the display substrate including a display area, a hole area located in the display area, and an encapsulation area located between the display area and the hole area, the method including:

[0140] forming at least one isolation structure on the substrate in the encapsulation area;

[0141] forming a conductive material layer on the side of the at least one isolation structure away from the substrate.

[0142] The at least one isolation structure includes a conductive structure and an insulating dielectric layer, the conductive structure at least includes a top surface away from a side of the substrate, and the conductive material layer is provided with at least part of the insulating dielectric layer between the conductive material layer and the top surface.

[0143] The display device can be any product or component with display function, such as a mobile phone, a wearable device, an AR or VR display device, a vehicle-mounted display device, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., and the embodiments of the present application are not limited thereto.

[0144] Although the embodiments of the present disclosure are disclosed as above, the content described is only the embodiments adopted for the convenience of understanding the present disclosure, and is not intended to limit the present application. Any person skilled in the art can make any modification and change in the form and details without departing from the spirit and scope of the present disclosure, and the patent protection scope of the present application shall be subject to the scope defined by the appended claims.

Claims

1. A display substrate, comprising a display area, a hole area located in the display area, and an encapsulation area located between the display area and the hole area, the encapsulation area comprising at least one isolation structure disposed on a substrate and a conductive material layer disposed on a side of the at least one isolation structure away from the substrate, the at least one isolation structure comprising a conductive structure and an insulating medium layer, the conductive structure comprising at least a top surface on a side away from the substrate, and the insulating medium layer being at least partially disposed between the conductive material layer and the top surface. 2.The display substrate of claim 1, wherein, The top surface of the conductive structure comprises a groove and first and second flat areas located on opposite sides of the groove, the first and second flat areas are parallel to the substrate, the groove is recessed towards the substrate, and the insulating medium layer covers at least part of the first and second flat areas; and the insulating medium layer is disposed between the first and second flat areas and the conductive material layer. 3.The display substrate of claim 2, wherein, The groove comprises inner side walls on opposite sides, at least one of the inner side walls on the opposite sides comprises a third flat surface, the insulating medium layer covers the third flat surface, and the insulating medium layer is disposed between the third flat surface and the conductive material layer. 4.The display substrate of claim 3, wherein, The conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence away from the substrate, the inner side walls on opposite sides of the first and second conductive structure layers are respectively the inner side walls on opposite sides of the groove; or the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence away from the substrate, the inner side walls on opposite sides of the second conductive structure layer respectively cover the inner side walls on opposite sides of the first conductive structure layer, and the inner side walls on opposite sides of the second conductive structure layer are respectively the inner side walls on opposite sides of the groove; or the conductive structure comprises a conductive structure layer, the inner side walls on opposite sides of the conductive structure layer are respectively the inner side walls on opposite sides of the groove, and the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence away from the substrate. 5.The display substrate of claim 2, wherein, The groove comprises inner side walls on opposite sides, at least one of the inner side walls on opposite sides of the groove comprises a second undercut structure and a third flat surface, the third flat surface is connected to a side of the second undercut structure away from the substrate, the insulating medium layer covers the third flat surface, the insulating medium layer exposes the second undercut structure, the insulating medium layer is disposed between the third flat surface and the conductive material layer, and the conductive material layer on the insulating medium layer is disconnected from the conductive material layer at the bottom of the groove at the second undercut structure. 6.The display substrate of claim 5, wherein, The conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the inner side walls of the opposite sides of the first conductive structure layer and the second conductive structure layer are the inner side walls of the opposite sides of the groove respectively, at least one of the inner side walls of the opposite sides of the first conductive structure layer comprises the second undercut structure, and at least one of the inner side walls of the opposite sides of the second conductive structure layer comprises the third flat surface. 7.The display substrate of claim 2, wherein, The groove comprises inner side walls of opposite sides, at least one of the inner side walls of the opposite sides of the groove comprises a second undercut structure, the insulating medium layer exposes the second undercut structure, and the conductive material layer on the insulating medium layer is disconnected with the conductive material layer at the bottom of the groove at the second undercut structure. 8.The display substrate of claim 7, wherein, The conductive structure comprises a conductive structure layer, the inner side walls of the opposite sides of the conductive structure layer are the inner side walls of the opposite sides of the groove respectively, the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence along the direction away from the substrate, and at least one of the inner side walls of the opposite sides of the second conductive layer comprises the second undercut structure. 9.The display substrate according to any one of claims 1 to 8, wherein The conductive structure comprises outer side walls of opposite sides, the top surface is connected to the outer side walls of the opposite sides of the conductive structure away from the substrate side respectively, at least one of the outer side walls of the opposite sides of the conductive structure comprises a fourth flat surface, the insulating medium layer covers the fourth flat surface, and the conductive material layer is provided with the insulating medium layer between the fourth flat surface. 10.The display substrate of claim 9, wherein, The conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the outer side walls of the opposite sides of the first conductive structure layer and the second conductive structure layer are the outer side walls of the opposite sides of the conductive structure respectively; or the conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along the direction away from the substrate, the outer side wall of at least one side of the second conductive structure layer covers the outer side wall of the first conductive structure layer, and the outer side wall of at least one side of the second conductive structure layer comprises a fourth flat surface; or the conductive structure comprises a conductive structure layer, the outer side walls of the opposite sides of the conductive structure layer are the outer side walls of the opposite sides of the conductive structure respectively, and the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence along the direction away from the substrate.

11. The display substrate according to any one of claims 1 to 8, wherein The conductive structure comprises outer side walls of opposite sides, the top surface is connected to the outer side walls of the opposite sides of the conductive structure away from the substrate side respectively, at least one of the outer side walls of the opposite sides of the conductive structure comprises a first undercut structure and a fourth flat surface, the fourth flat surface is connected to the first undercut structure away from the substrate side, the insulating medium layer covers the fourth flat surface, the insulating medium layer exposes the first undercut structure, the conductive material layer is provided with the insulating medium layer between the fourth flat surface, and the conductive material layer is disconnected at the first undercut structure. 12.The display substrate of claim 11, wherein, The conductive structure comprises a first conductive structure layer and a second conductive structure layer stacked in sequence along a direction away from the substrate, opposite sides of the first conductive structure layer and the second conductive structure layer are respectively outer side walls of opposite sides of the conductive structure, at least one of the opposite sides of the first conductive structure layer comprises the first undercut structure, and at least one of the opposite sides of the second conductive structure layer comprises the fourth flat surface.

13. The display substrate according to any one of claims 1 to 8, wherein The conductive structure comprises opposite side outer side walls, the top surface is connected to the opposite side outer side walls of the conductive structure away from the substrate, at least one of the opposite side outer side walls of the conductive structure comprises a first undercut structure, the insulating medium layer exposes the first undercut structure, and the conductive material layer is disconnected at the first undercut structure. 14.The display substrate of claim 13, wherein, The conductive structure comprises a conductive structure layer, opposite sides of the conductive structure layer are respectively opposite sides of the conductive structure, the conductive structure layer comprises a first conductive layer and a second conductive layer stacked in sequence along a direction away from the substrate, and at least one of the opposite sides of the second conductive layer comprises the first undercut structure.

15. A display device comprising the display substrate of any one of claims 1 to 14.

Images