Method and apparatus for generating skyrmions on the basis of current pulses, and magnetic field control method and apparatus therefor

Abstract

The present invention belongs to the technical field of magnetic storage. Specifically, the present invention relates to a method and apparatus for generating Skyrmions on the basis of current pulses, and a magnetic field control method and apparatus therefor. The magnetic field control method comprises: acquiring a target sample, wherein the target sample comprises electrodes and a material layer; placing the target sample in a controllable magnetic field, and applying preset current pulses to the electrodes, so as to generate Skyrmions on the material layer on the basis of the controllable magnetic field and the preset current pulses; and controlling the erasure and writing of the Skyrmions by means of the controllable magnetic field. Therefore, the present invention solves the problems in the prior art of techniques being complex and the cost being high.

Description

Method and device for generating skyrmions based on current pulse and magnetic field manipulation thereof TECHNICAL FIELD

[0001] The present application belongs to the technical field of magnetic storage. Specifically, the present application relates to a method and device for generating skyrmions based on current pulse and magnetic field manipulation thereof. BACKGROUND

[0002] The rapid development of information technology has put forward very high requirements for the density and speed of data storage. Traditional magnetic storage technology is gradually approaching its physical limit. Under this background, magnetic skyrmions, as a kind of nanoscale magnetic structure with topological protection, are regarded as an ideal information carrier for constructing the next generation of high-density, non-volatile, low-power storage devices due to their small size, high stability, and low driving energy consumption. Generally, the presence and absence of skyrmions in ferromagnetic materials can be defined as information "1" and "0" respectively, so the controllable and efficient writing and erasing of skyrmions is the core of realizing their storage applications.

[0003] Currently, current pulse manipulation is one of the mainstream techniques for generating and manipulating skyrmions, which has the advantages of non-volatility, reversibility and high-speed response. However, the practical application of this technology still faces severe challenges: first, the generation of skyrmions usually depends heavily on complex micro-nano processing technology (such as the preparation of nano-discs, nano-wires and other specific geometrically limited structures) to break the symmetry, which not only has complex process and high cost, but also limits the integration density and design flexibility of the device. Second, the writing and erasing operations of skyrmions often require many fine control means, with narrow operation window, controllability and reliability challenges. Third, many traditional magnetic materials (such as B20 metal compounds) have poor compatibility with current semiconductor processes, further increasing the difficulty of integration.

[0004] In terms of material systems, in addition to traditional B20 chiral magnets and magnetic thin films, two-dimensional van der Waals ferromagnetic materials have gradually emerged as a new star in the exploration of topological magnetic structures due to their intrinsic two-dimensional characteristics, high integration and excellent magnetic properties. Compared with traditional ferromagnetic metal thin films, two-dimensional van der Waals magnetic materials exhibit more significant long-range magnetic order and highly adjustable magnetism, opening up a new path for the development of high-performance, non-volatile spintronic devices. The unique interlayer van der Waals force not only promotes seamless integration with other materials, but also provides a broad space for innovative design and application of related devices.

[0005] However, how to achieve a simple, fast and reversible method for generating and erasing skyrmions in such two-dimensional materials without relying on complex micro-nano processing is still a key technical problem to be solved in the field.

[0006] SUMMARY

[0007] One object of the present application is to provide a method for generating skyrmions based on current pulses and magnetic field manipulation, to solve the problems of complex skyrmion generation and erasure technology, high cost, and difficulty in large-scale commercial application in the prior art, while ensuring that the generated skyrmions can stably exist after the external magnetic field and current are removed, thereby improving the stability and reliability of information storage.

[0008] Another object of the present application is to provide a device for generating skyrmions based on current pulses and magnetic field manipulation. The device can generate skyrmions in the material layer by applying a current pulse to the target sample and adjusting the magnetic field strength, and can manipulate the erasure and writing of the skyrmions by adjusting the magnetic field strength.

[0009] The object of the present application is achieved by the following technical solutions.

[0010] In the context of the present application, the term "skyrmion" refers to a skyrmion lattice structure arranged in order, i.e. a plurality of skyrmions arranged in a regular lattice form in the material, forming a highly ordered magnetic domain structure.

[0011] The first aspect of the present application provides a method for generating skyrmions based on current pulses and magnetic field manipulation, which comprises the following steps: obtaining a target sample, wherein the target sample comprises an electrode and a material layer; placing the target sample in a controllable magnetic field and applying a preset current pulse to the electrode of the target sample, to generate skyrmions on the material layer based on the controllable magnetic field and the preset current pulse; and manipulating the erasure and writing of the skyrmions by the controllable magnetic field.

[0012] More specifically, the present application provides a method for generating skyrmions based on current pulses and magnetic field manipulation, which comprises the following steps: obtaining a target sample, wherein the target sample comprises an electrode and a material layer; placing the target sample in a first magnetic field and applying a preset current pulse to the electrode, to generate skyrmions on the material layer based on the first magnetic field and the preset current pulse; and manipulating the erasure and writing of the skyrmions by a second magnetic field.

[0013] In some embodiments of the present application, the material layer is placed between the electrodes, and the electrodes at both ends of the material layer are respectively connected to the positive and negative poles of the pulse power source.

[0014] In some embodiments of the present application, the structure of the material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of the material layer in the initial state is a stripe domain structure.

[0015] In some embodiments of the present application, the material layer is a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal.

[0016] In some embodiments of the present application, the first magnetic field has a strength of 500-1500 Oe.

[0017] In some embodiments of the present application, the preset current pulse has a pulse width of 1 ns-10 ms and a pulse size of 1-1000 nA.

[0018] In some embodiments of the present application, the material layer has a thickness of 120 nm-1 μm.

[0019] In some embodiments of the present application, the target sample is obtained by a method comprising the following steps: obtaining a raw material, wherein the raw material comprises a glass slide, a mechanical exfoliation special adhesive tape, a polydimethylsiloxane adhesive film, and a van der Waals ferromagnetic material Fe3GaTe2 single crystal; attaching the polydimethylsiloxane adhesive film on the glass slide, and thinning the van der Waals ferromagnetic material Fe3GaTe2 single crystal according to the mechanical exfoliation special adhesive tape based on the adhesive tape exfoliation method to obtain a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal; attaching the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal on the polydimethylsiloxane adhesive film, and transferring the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal between electrodes by using the polydimethylsiloxane adhesive film to obtain the target sample.

[0020] In some embodiments of the present application, the polydimethylsiloxane adhesive film is prepared from a polydimethylsiloxane precursor solution having a viscosity of 200-1000 cSt, preferably 500 cSt. Alternatively, the polydimethylsiloxane adhesive film can be commercially available.

[0021] In some embodiments of the present application, before the erasing and writing of the skyrmions by the second magnetic field, the method further comprises the following step: removing the first magnetic field to determine that the skyrmions stably exist.

[0022] In some embodiments of the present application, the erasing and writing of the skyrmions by the second magnetic field is performed by a method comprising the following steps: if the second magnetic field is a first preset magnetic field, the skyrmions are converted into a stripe domain structure to realize the erasing of the skyrmions, wherein the first preset magnetic field has a strength greater than or equal to 0.3 T.

[0023] In some embodiments of the present application, after the realization of the erasing of the skyrmions, the method further comprises the following step: if the second magnetic field is a second preset magnetic field, the stripe domain structure is converted into the skyrmions to realize the writing of the skyrmions, wherein the second preset magnetic field has a strength of 500-1500 Oe.

[0024] In some embodiments of the present application, the second preset magnetic field has a strength less than that of the first preset magnetic field.

[0025] The second aspect of the present application provides a device for generating skyrmions based on current pulses and manipulating skyrmions based on magnetic fields, which is used for generating skyrmions based on current pulses and manipulating skyrmions based on magnetic fields, wherein the device comprises: a magnetic field generating unit for providing a magnetic field with adjustable intensity; a target sample placed in the magnetic field generating unit, wherein the target sample comprises electrodes and a material layer, and the material layer is arranged between the electrodes; a pulse power supply, wherein the positive and negative electrodes of the pulse power supply are respectively connected to the electrodes at both ends of the material layer, a preset current pulse is applied to the electrodes, and skyrmions are generated on the material layer based on the magnetic field and the preset current pulse.

[0026] The present application has the following beneficial effects:

[0027] 1. Material innovation, excellent performance:

[0028] A new two-dimensional van der Waals ferromagnetic material Fe3GaTe2 is used as a carrier, which has a magnetic order higher than room temperature, strong magnetic anisotropy and excellent electrical conductivity, providing an ideal material platform for the stable existence and efficient current control of skyrmions.

[0029] The intrinsic two-dimensional characteristics and the van der Waals integration capability without lattice matching greatly improve the compatibility with the existing semiconductor process, laying a foundation for future high-density integration.

[0030] 2. Simple process, low cost:

[0031] The dependence on complex micro-nano processing technology is completely eliminated, and the device can be prepared only by simple mechanical peeling and transferring technology, which significantly simplifies the preparation process and greatly reduces the manufacturing cost, and is conducive to promoting large-scale commercial application.

[0032] 3. Easy to operate, strong controllability:

[0033] The generation of skyrmions only requires the cooperative operation of current pulses and magnetic fields, which is simple and efficient.

[0034] The erasing and writing process of skyrmions can be realized only by adjusting the magnetic field strength, without the need for re-feeding current or other complex operations. This "magnetic control erasing and writing" mechanism has a wide operation window, and has high controllability, repeatability and reliability.

[0035] 4. Excellent performance, great application potential:

[0036] Highly ordered skyrmion lattice can be manipulated, rather than random isolated skyrmions, and the information storage density is high.

[0037] The information reversible storage operation is realized, and the process is non-volatile, and the SGM state is stable after removing the external field, and the data retention is strong.

[0038] The whole method has low energy consumption and high speed, and meets the core requirements of high speed and low power consumption of the next generation of spin electronic devices.

[0039] In summary, the application applies current pulses and external magnetic fields in the material layer, realizes efficient generation and precise control of SGM. By fine-tuning the magnetic field strength, not only can the generation of SGM be induced, but also the convenient erasing operation can be realized, greatly improving the efficiency and flexibility of information processing. Thus, the application solves the technical problems of complex technology and high cost in the prior art, and the method of the application can ensure that the generated SGM can still exist stably after removing the external magnetic field and current, thereby improving the stability and reliability of information storage.

[0040] Brief description of the drawings

[0041] The above and / or additional aspects and advantages of the present application will become apparent and more readily appreciated from the following description, taken in conjunction with the following drawings, in which:

[0042] Fig. 1 is a flowchart of a method for generating SGM based on current pulses and magnetic field control thereof according to one specific embodiment of the present application;

[0043] Fig. 2 is a schematic diagram of a method for generating SGM based on current pulses and magnetic field control thereof according to one specific embodiment of the present application;

[0044] Fig. 3 is a flowchart of a method for generating SGM based on current pulses and magnetic field control thereof according to one specific embodiment of the present application;

[0045] Fig. 4 is a schematic diagram of the structure of a material layer according to embodiment 1 of the present application;

[0046] Fig. 5 is a schematic diagram of a preset current pulse according to embodiment 1 of the present application;

[0047] Fig. 6 is a schematic diagram of SGM generated by a magnetic field and a current pulse according to embodiment 1 of the present application;

[0048] Fig. 7 is a schematic diagram of SGM under zero magnetic field and no current pulse according to embodiment 1 of the present application;

[0049] Fig. 8 is a schematic diagram of a strip domain structure under 0.5T according to embodiment 1 of the present application;

[0050] Fig. 9 is a schematic diagram of SGM under a 1000Oe magnetic field according to embodiment 1 of the present application;

[0051] FIG. 10 is a schematic diagram of a device for generating a skyrmion and magnetic field manipulation thereof based on a current pulse according to an embodiment of the present application;

[0052] FIG. 11 is a schematic diagram of a skyrmion generated by a magnetic field and a current pulse according to Embodiment 2 of the present application;

[0053] FIG. 12 is a schematic diagram of a skyrmion generated by a magnetic field and a current pulse according to Embodiment 3 of the present application;

[0054] FIG. 13 is a schematic diagram of a skyrmion generated by a magnetic field and a current pulse according to Embodiment 4 of the present application;

[0055] FIG. 14 is a schematic diagram of a skyrmion generated by a magnetic field and a current pulse according to Embodiment 5 of the present application;

[0056] FIG. 15 is a schematic diagram of a magnetic domain structure of a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer according to Comparative Example 1 of the present application;

[0057] Reference signs: 1 - two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal; 2 - adhesive tape for mechanical exfoliation; 3 - polydimethylsiloxane film; 4 - glass slide; 5 - electrode; 6 - preset current pulse; 7 - controllable magnetic field; 100 - device for generating a skyrmion and magnetic field manipulation thereof based on a current pulse; 200 - target sample; 300 - pulse power supply.

[0058] Best mode for carrying out the invention

[0059] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, in which the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by reference to the accompanying drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application.

[0060] The method and device for generating a skyrmion and magnetic field manipulation thereof based on a current pulse according to the embodiments of the present application are described below with reference to the accompanying drawings. In view of the complex process and integration difficulty mentioned in the background art, the present application provides a method for generating a skyrmion and magnetic field manipulation thereof based on a current pulse. In this method, a current pulse and an applied magnetic field are directly applied in the material layer, realizing efficient generation and precise manipulation of skyrmions. By finely adjusting the magnetic field strength, not only can the generation of skyrmions be induced, but also convenient erasing operations can be realized, greatly improving the efficiency and flexibility of information processing. Thus, the present application solves the problems of complex technology and high cost in the prior art.

[0061] Specifically, FIG. 1 is a flowchart of a method for generating a skyrmion and magnetic field manipulation thereof based on a current pulse according to an embodiment of the present application.

[0062] As shown in FIG. 1, the method for generating a skyrmion and magnetic field manipulation thereof based on a current pulse of the present application comprises the following steps: in step S101, a target sample is obtained.

[0063] The target sample comprises electrodes and a material layer, the structure of the material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of the material layer in an initial state is a stripe domain structure, wherein the initial state is a state without an external magnetic field and without a current.

[0064] In the embodiment of the present application, the material layer is placed between the electrodes, and the electrodes at both ends of the material layer are connected to the positive and negative poles of the pulse power source.

[0065] It can be understood that, by placing the material layer between the electrodes and connecting it to the positive and negative poles of the pulse power source, the embodiment of the present application realizes efficient generation, accurate manipulation, and information storage and processing of skyrmions in the material layer.

[0066] In the embodiment of the present application, as shown in FIG. 2, the step of obtaining the target sample comprises: obtaining raw materials, wherein the raw materials comprise a van der Waals ferromagnetic material Fe3GaTe2 single crystal, a mechanical exfoliation special adhesive tape 2, a polydimethylsiloxane adhesive film 3, and a glass slide 4; attaching the polydimethylsiloxane adhesive film 3 on the glass slide 4, thinning the van der Waals ferromagnetic material Fe3GaTe2 single crystal by the mechanical exfoliation special adhesive tape 2 based on the adhesive tape exfoliation method to obtain a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal 1; and attaching the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal 1 on the polydimethylsiloxane adhesive film 3, and transferring the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal 1 between the electrodes 5 by using the polydimethylsiloxane adhesive film 3 to obtain the target sample.

[0067] The polydimethylsiloxane adhesive film 3 is prepared from a polydimethylsiloxane precursor solution with a viscosity of 500 cSt.

[0068] The embodiment of the present application efficiently prepares the target sample attached between the electrodes by carefully selecting raw materials and using mechanical exfoliation and transfer technology, which not only demonstrates technical innovation, but also ensures high performance of the material.

[0069] In step S102, as shown in FIG. 2, the target sample is placed in a controllable magnetic field 7, a preset current pulse 6 is applied to the electrodes 5, and a skyrmion is generated on the material layer based on the controllable magnetic field 7 and the preset current pulse 6. The preset current pulse can be a preset current pulse, for example, the pulse size of the preset current pulse can be 500 nA.

[0070] By placing the target sample in the controllable magnetic field 7 and applying a preset current pulse, the embodiments of the present application realize the accurate generation of skyrmions. Skyrmions have strong stability, which helps to improve the stability and reliability of information storage.

[0071] In step S103, the erasing and writing of skyrmions are controlled by the controllable magnetic field.

[0072] By controlling the erasing and writing of skyrmions by the controllable magnetic field, the present application realizes accurate control and optimization of the information storage process.

[0073] Before the erasing and writing of skyrmions are controlled by the controllable magnetic field, the method of the present application further includes the following steps: removing the controllable magnetic field to determine the stable existence of skyrmions. This feature enhances the feasibility of skyrmion-based information storage technology, that is, even if the external magnetic field fluctuates or is interrupted, the stored information will not be immediately lost, thereby improving the reliability and stability.

[0074] It should be noted that when the controllable magnetic field is removed, if the skyrmions are stably arranged, the skyrmions exist stably.

[0075] In the embodiments of the present application, the erasing and writing of skyrmions by the controllable magnetic field are performed by a method including the following steps: if the controllable magnetic field is a first preset magnetic field, the skyrmions are converted into a stripe domain structure, realizing the erasing of skyrmions. The first preset magnetic field can be determined according to actual conditions, for example, the first preset magnetic field can be 0.5T. By setting the first preset magnetic field to realize the conversion of skyrmions into a stripe domain structure, the erasing process of skyrmions is realized, thereby optimizing the performance of information storage and making information storage more flexible. Users can erase and update information at any time as needed without worrying about causing permanent damage to the storage medium, thereby enhancing the reliability of information storage.

[0076] After the skyrmions realize erasing, if the controllable magnetic field is a second preset magnetic field, the stripe domain structure is converted into skyrmions, realizing the writing of skyrmions.

[0077] The second preset magnetic field can be determined according to actual conditions, for example, the second preset magnetic field can be 1000Oe, and the intensity of the second preset magnetic field is less than that of the first preset magnetic field.

[0078] By setting the controllable magnetic field to the second preset value, the stripe domain structure is converted into skyrmions, realizing the efficient and accurate writing of skyrmions, which not only significantly reduces the error rate in the writing process, but also effectively weakens the potential impact of noise interference on stored information, ensuring the accuracy and stability of information storage, and realizing the reversible storage function of information.

[0079] The application directly applies a current pulse and an applied magnetic field in a material layer, realizes efficient generation and precise control of a skyrmion. By finely adjusting the magnetic field strength, not only the generation of the skyrmion can be induced, but also the convenient erasing operation can be realized, which greatly improves the efficiency and flexibility of information processing. Thus, the application solves the problems of complex technology and high cost in the prior art.

[0080] Embodiment 1

[0081] The method for generating a skyrmion based on a current pulse and its magnetic field control according to the present embodiment will be specifically described below with reference to FIGS. 3 to 9. Specifically, the method according to the present embodiment includes the following steps:

[0082] S1. A target sample is placed in a controllable magnetic field and a preset current pulse is applied, the target sample including a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 300 nm. The structure of the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of the initial state is a stripe domain structure, as shown in FIG. 4.

[0083] S2. While applying a 1000 Oe facing magnetic field, 100 current pulses with a pulse width of 2 ms and a pulse size of 500 nA are input, as shown in FIG. 5. The generation of the skyrmion can be observed by a magnetic force microscope, as shown in FIG. 6.

[0084] S3. The magnetic field and the current are removed, and the skyrmion is still stably present, which can be observed by the magnetic force microscope, as shown in FIG. 7.

[0085] S4. A magnetic field of 0.5 T is directly applied without a current, and after the magnetic field is removed, the skyrmion is converted into a stripe domain structure, as shown in FIG. 8, which can be observed by the magnetic force microscope.

[0086] S5. A 1000 Oe magnetic field is applied again without a current, and the stripe domain structure is converted into a skyrmion, as shown in FIG. 9, which can be observed by the magnetic force microscope. After the magnetic field is removed, the skyrmion is still stably present.

[0087] In summary, by applying a current pulse to the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 layer, conditions are created for the generation of the skyrmion. By adjusting the size of the external magnetic field, the writing and erasing of the magnetic skyrmion are realized, and the process is reversible, and the operation method is simple.

[0088] Further, the device for generating a skyrmion based on a current pulse and its magnetic field control according to the present application is described with reference to FIG. 10.

[0089] FIG. 10 is a schematic diagram of a device for generating a skyrmion based on a current pulse and its magnetic field control according to one specific embodiment of the present application.

[0090] As shown in FIG. 10, the device 110 comprises a magnetic field generating unit 100, a target sample 200 and a pulse power supply 300.

[0091] The target sample 200 is placed in the magnetic field generating unit 100, wherein the target sample 200 comprises electrodes and a material layer, the material layer is arranged between the electrodes; the positive and negative poles of the pulse power supply 300 are connected to the electrodes at both ends of the material layer, a preset current pulse is applied to the electrodes, and a SGM is generated on the material layer based on the magnetic field and the preset current pulse.

[0092] It should be noted that the foregoing explanation and description of the method embodiment for generating SGM based on current pulse and magnetic field manipulation thereof also applies to the device embodiment for generating SGM based on current pulse and magnetic field manipulation thereof, which will not be described here again.

[0093] Embodiment 2

[0094] The method of this embodiment comprises the following steps:

[0095] S1. Place the target sample in a controllable magnetic field and apply a preset current pulse, the target sample comprises a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 300 nm. The structure of the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of its initial state is a stripe domain structure.

[0096] S2. While applying a 1300 Oe facing magnetic field, pass 100 current pulses with a pulse width of 2 ms and a pulse size of 500 nA. The generation of SGM can be observed by a magnetic force microscope, as shown in FIG. 11.

[0097] S3. Remove the magnetic field and the current, and it can be observed by a magnetic force microscope that the SGM still exists stably.

[0098] S4. Directly apply a magnetic field of 0.5 T without current, and after removing the magnetic field, it can be observed by a magnetic force microscope that the SGM is converted into a stripe domain structure.

[0099] S5. Apply 1300 Oe again without current, and it can be observed by a magnetic force microscope that the stripe domain structure is converted into SGM, and the SGM still exists stably after removing the magnetic field.

[0100] Embodiment 3

[0101] The method of this embodiment comprises the following steps:

[0102] S1. A target sample, including a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 450 nm, is placed in a controllable magnetic field and a preset current pulse is applied. The two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer has a two-dimensional van der Waals structure, and the magnetic domain structure in the initial state is a stripe domain structure.

[0103] S2. While a 1000 Oe facing magnetic field is applied, 100 current pulses with a pulse width of 2 ms and a pulse size of 500 nA are applied. The generation of skyrmions can be observed by a magnetic force microscope, as shown in FIG. 12.

[0104] S3. The magnetic field and the current are removed, and it can be observed by the magnetic force microscope that the skyrmions still stably exist.

[0105] S4. A 0.5 T magnetic field is directly applied without a current, and after the magnetic field is removed, it can be observed by the magnetic force microscope that the skyrmions are converted into a stripe domain structure.

[0106] S5. A 1000 Oe is applied again without a current, and it can be observed by the magnetic force microscope that the stripe domain structure is converted into skyrmions, and the skyrmions still stably exist after the magnetic field is removed.

[0107] Embodiment 4

[0108] The method of this embodiment includes the following steps:

[0109] S1. A target sample, including a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 450 nm, is placed in a controllable magnetic field and a preset current pulse is applied. The two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer has a two-dimensional van der Waals structure, and the magnetic domain structure in the initial state is a stripe domain structure.

[0110] S2. While a 1300 Oe facing magnetic field is applied, 100 current pulses with a pulse width of 2 ms and a pulse size of 500 nA are applied. The generation of skyrmions can be observed by a magnetic force microscope, as shown in FIG. 13.

[0111] S3. The magnetic field and the current are removed, and it can be observed by the magnetic force microscope that the skyrmions still stably exist.

[0112] S4. A 0.5 T magnetic field is directly applied without a current, and after the magnetic field is removed, it can be observed by the magnetic force microscope that the skyrmions are converted into a stripe domain structure.

[0113] S5. A 1300 Oe is applied again without a current, and it can be observed by the magnetic force microscope that the stripe domain structure is converted into skyrmions, and the skyrmions still stably exist after the magnetic field is removed.

[0114] Embodiment 5

[0115] The method of the embodiment comprises the following steps:

[0116] S1. A target sample is placed in a controllable magnetic field, and a preset current pulse is applied, the target sample comprising a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 300 nm. The structure of the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of the initial state is a stripe domain structure.

[0117] S2. While a 1300 Oe facing magnetic field is applied, 100 current pulses with a pulse width of 2 ms and a pulse size of 1000 nA are input. The generation of skyrmions can be observed by a magnetic force microscope, as shown in FIG. 14.

[0118] S3. The magnetic field and the current are removed, and it can be observed by the magnetic force microscope that the skyrmions still stably exist.

[0119] S4. A magnetic field of 0.5 T is directly applied without a current, and after the magnetic field is removed, it can be observed by the magnetic force microscope that the skyrmions are converted into a stripe domain structure.

[0120] S5. A 1300 Oe is applied again without a current, and it can be observed by the magnetic force microscope that the stripe domain structure is converted into skyrmions, and the skyrmions still stably exist after the magnetic field is removed.

[0121] Comparative Example 1

[0122] The method of the comparative example comprises the following steps:

[0123] S1. A target sample is placed in a controllable magnetic field, the target sample comprising a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer with a thickness of 300 nm. The structure of the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 material layer is a two-dimensional van der Waals structure, and the magnetic domain structure of the initial state is a stripe domain structure (as shown in FIG. 15).

[0124] S2. A 1000 Oe facing magnetic field is applied without inputting a current pulse. It is observed by a magnetic force microscope that no skyrmions are generated (as shown in FIG. 15).

[0125] S3. A 1300 Oe facing magnetic field is continuously applied without inputting a current pulse. It is observed by a magnetic force microscope that no skyrmions are still generated (as shown in FIG. 15).

[0126] It can be seen that if only a magnetic field is applied without applying a current pulse, the two-dimensional van der Waals ferromagnetic material cannot generate skyrmions.

[0127] In the description of the application, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the application. In the description of the application, the illustrative description of the above terms is not necessarily directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any appropriate manner in any one or N embodiments or examples. In addition, different embodiments or examples described in the description of the application and the features of different embodiments or examples can be combined and combined by those skilled in the art without contradiction.

[0128] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include at least one of the features. In the description of the application, the meaning of "N" is at least two, for example, two, three, etc., unless otherwise specifically limited.

[0129] Any process or method descriptions in flow charts or otherwise described herein can be understood as representing code modules, segments, or portions of code that include one or more executable instructions for implementing the specified logical functions or steps, and the preferred embodiments of the application include additional or fewer steps or processes in addition to or other than those shown and discussed. The various steps or processes described herein can be carried out by a device (e.g., a computer) that desires to implement the functions of the present application, either locally or remotely.

[0130] It should be understood that parts of the application can be implemented in hardware, software, firmware or a combination thereof. In the above-described embodiments, the steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. As in another embodiment implemented by hardware, any one or a combination of the following technologies known in the art can be used: discrete logic circuit with logic gate circuit for implementing logical functions on data signals, application specific integrated circuit with suitable combination of logic gate circuit, programmable gate array, field programmable gate array, etc.

[0131] Those skilled in the art of the present technology can understand that all or part of the steps carried out by the method of the above-described embodiments can be instructed by a program to complete the relevant hardware, and the above-described program can be stored in a computer readable storage medium. The program, when executed, includes one or a combination of the steps of the method embodiment.

[0132] Although the embodiments of the present application have been shown and described above, it is understood that the above-described embodiments are exemplary and are not to be construed as limiting the present application, and that changes, modifications, substitutions and variations can be made by those skilled in the art without departing from the scope of the present application.

Claims

1. A method for generating a skyrmion and its magnetic field manipulation based on current pulse, characterized in that, The method comprises the following steps: obtaining a target sample, wherein the target sample comprises electrodes and a material layer; placing the target sample in a first magnetic field and applying a preset current pulse to the electrodes to generate a skyrmion on the material layer based on the first magnetic field and the preset current pulse; controlling erasing and writing of the skyrmion by a second magnetic field.

2. The method of claim 1, wherein, The material layer is arranged between the electrodes, and the electrodes at both ends of the material layer are connected to the positive and negative poles of a pulse power source, respectively.

3. The method of claim 1, wherein, The material layer has a two-dimensional van der Waals structure, and the magnetic domain structure of the material layer in an initial state is a stripe domain structure. Preferably, the material layer is a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal.

4. The method of claim 1, wherein, The first magnetic field has a strength of 500-1500 Oe. Preferably, the preset current pulse has a pulse width of 1 ns-10 ms and a pulse size of 1-1000 nA. Preferably, the material layer has a thickness of 120 nm-1 μm.

5. The method of claim 1, wherein, The method for obtaining the target sample comprises the following steps: obtaining raw materials, wherein the raw materials comprise a glass slide, a mechanical peeling special adhesive tape, a polydimethylsiloxane adhesive film, and a van der Waals ferromagnetic material Fe3GaTe2 single crystal; attaching the polydimethylsiloxane adhesive film on the glass slide, thinning the van der Waals ferromagnetic material Fe3GaTe2 single crystal by the mechanical peeling special adhesive tape based on an adhesive tape peeling method to obtain a two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal; attaching the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal on the polydimethylsiloxane adhesive film, and transferring the two-dimensional van der Waals ferromagnetic material Fe3GaTe2 single crystal between the electrodes by using the polydimethylsiloxane adhesive film to obtain the target sample.

6. The method of claim 5, wherein, The polydimethylsiloxane adhesive film is prepared from a polydimethylsiloxane precursor liquid with a viscosity of 200-1000 cSt.

7. The method of claim 1, wherein, Before the method for controlling erasing and writing of the skyrmion by the second magnetic field, the method further comprises the following steps: removing the first magnetic field to determine whether the skyrmion stably exists.

8. The method of claim 1, wherein, The method for controlling erasing and writing of the skyrmion by the second magnetic field comprises the following steps: if the second magnetic field is a first preset magnetic field, the skyrmion is converted into a stripe domain structure to realize erasing of the skyrmion, wherein the first preset magnetic field has a strength greater than or equal to 0.3 T.

9. The method of claim 8, wherein, After the realization of the erasing of the skyrmion, the method further comprises the following steps: if the second magnetic field is a second preset magnetic field, the stripe domain structure is converted into a skyrmion to realize writing of the skyrmion, wherein the second preset magnetic field has a strength of 500-1500 Oe.

10. An apparatus for generating a skyrmion and its magnetic field manipulation based on a current pulse, characterized in that, The device is used for generating a skyrmion based on a current pulse and controlling the skyrmion based on a magnetic field, and the device comprises: a magnetic field generating unit for providing a magnetic field with adjustable strength; a target sample arranged in the magnetic field generating unit, wherein the target sample comprises electrodes and a material layer, and the material layer is arranged between the electrodes; a magnetic field generating unit for providing a magnetic field with adjustable strength; a target sample arranged in the magnetic field generating unit, wherein the target sample comprises electrodes and a material layer, and the material layer is arranged between the electrodes; The pulse power source, wherein the positive and negative poles of the pulse power source are connected with the electrodes at both ends of the material layer respectively, and a preset current pulse is applied to the electrodes, and the skyrmions are generated on the material layer based on the magnetic field and the preset current pulse.

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