Measurement device and measurement method

Abstract

This measurement device measures a bonded substrate having an adhesive layer between a first substrate and a second substrate, said adhesive layer obtained by bonding a bonding surface of the first substrate and a bonding surface of the second substrate by use of an adhesive. The measurement device includes: an infrared sensor which emits infrared light from the second-substrate side of the bonded substrate and receives reflected light from the infrared light which has passed through the adhesive layer and has been reflected by the bonding surface of the first substrate; and an information processing unit which receives detection information from the infrared sensor and acquires, on the basis of the detection information, the thickness spanning from the second substrate to the bonding surface of the first substrate, including the adhesive layer.

Description

Measuring device and measuring method

[0001] This disclosure relates to a measuring device and a measuring method.

[0002] Patent Document 1 discloses a bonding system for forming a bonded substrate (polymerized substrate) by joining a first substrate and a second substrate via an adhesive. In this bonded substrate, the adhesive layer formed between the first substrate and the second substrate undergoes changes in the in-plane distribution of height (thickness) due to undulation or curvature. Therefore, in the next processing step for the bonded substrate (for example, the grinding step for the bonded substrate), it is important to appropriately recognize the change in the height of the adhesive layer and set the processing profile accordingly.

[0003] Japanese Patent Publication No. 2015-46531

[0004] This disclosure provides a technology that can accurately measure the height of a bonded substrate, including the adhesive layer.

[0005] According to one aspect of the present disclosure, a measuring device is provided for measuring a bonded substrate having an adhesive layer between a first substrate and a second substrate, by joining the bonding surface of a first substrate and the bonding surface of a second substrate with an adhesive, the measuring device comprising: an infrared sensor that irradiates infrared light from the second substrate side of the bonded substrate and receives reflected light of the infrared light that has passed through the adhesive layer and been reflected at the bonding surface of the first substrate; and an information processing unit that receives detection information from the infrared sensor and obtains the thickness from the second substrate to the bonding surface of the first substrate including the adhesive layer based on the detection information.

[0006] According to one embodiment, the height of the bonded substrate, including the adhesive layer, can be measured accurately.

[0007] This is a block diagram showing the overall configuration of a semiconductor manufacturing system according to an embodiment. Figure 2(A) is a schematic cross-sectional view showing a bonded substrate formed by the semiconductor manufacturing system. Figure 2(B) is a schematic cross-sectional view showing a ground substrate formed by the semiconductor manufacturing system. This is a schematic plan view showing the overall configuration of the bonding apparatus. This is a flowchart showing the bonding method of the bonding apparatus. This is a side cross-sectional view showing the state before bonding in the bonding module. This is a side cross-sectional view showing the state during bonding in the bonding module. This is a schematic plan view showing the configuration of the grinding apparatus. This is a side view showing an example of a grinding unit of the grinding apparatus. This is a side view showing an example of an inclination angle adjustment section of the grinding apparatus. Figure 10(A) is a side view showing an example of an inclination angle when the remaining thickness of the bonded substrate is uniform in the radial direction. Figure 10(B) is a side view showing an example of an inclination angle when the remaining thickness increases from the center to the periphery of the bonded substrate. Figure 10(C) is a side view showing an example of an inclination angle when the remaining thickness decreases from the center to the periphery of the bonded substrate. This is a flowchart showing the grinding method of the grinding apparatus. This is a cross-sectional view showing the measurement of the lower thickness of the bonded substrate by a measuring device. This diagram shows the components of the control unit of the bonding device and the control unit of the grinding device as functional blocks. This is a flowchart of the measurement method according to the embodiment. This is a block diagram showing the overall configuration of a semiconductor manufacturing system according to a modified example. This is a cross-sectional view showing a measurement device according to a modified example.

[0008] The following describes embodiments for implementing this disclosure with reference to the drawings. In each drawing, the same reference numerals are used for identical components, and redundant explanations may be omitted.

[0009] As shown in Figure 1, the semiconductor manufacturing system according to this embodiment includes a bonding apparatus 1 that bonds a first substrate W1 and a second substrate W2 to form a bonded substrate T, a grinding apparatus 6 that grinds the bonded substrate T to form a ground substrate TG, and a management apparatus 9 that manages the entire system. The semiconductor manufacturing system also includes a measuring apparatus 8 installed inside the bonding apparatus 1 to measure the bonded substrate T formed by bonding the first substrate W1 and the second substrate W2.

[0010] As shown in Figure 2(A), the first substrate W1 and the second substrate W2 are formed as discs of substantially the same shape (same diameter) and are joined to each other by being superimposed vertically by the joining device 1. The joined substrate T also has an adhesive layer G between the first substrate W1 and the second substrate W2, and the two substrates are joined together by the adhesive layer G.

[0011] The first substrate W1 is a processing substrate having multiple semiconductor devices (electronic circuits) on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer. Therefore, the first substrate W1 will also be referred to as the processing substrate W1 below. Of the surfaces of the processing substrate W1, the surface that has each semiconductor device and is joined to the second substrate W2 is called the "joining surface W1j", and the surface opposite to the joining surface W1j is called the "non-joining surface W1n".

[0012] The second substrate W2 is, for example, a carrier substrate (support substrate) that supports the processing substrate W1. Therefore, hereafter, the second substrate W2 will also be referred to as the carrier substrate W2. As this carrier substrate W2, for example, a bare wafer without semiconductor devices or a glass substrate can be used. Hereinafter, the surface of the carrier substrate W2 that is joined to the processing substrate W1 will be referred to as the "joining surface W2j", and the surface opposite to the joining surface W2j will be referred to as the "non-joining surface W2n". However, the second substrate W2 is not limited to a carrier substrate, but may also be a processing substrate having semiconductor devices.

[0013] Furthermore, the adhesive layer G (adhesive) that joins the processing substrate W1 and the carrier substrate W2 can be made of thermoplastic resin, photocurable resin, etc. Examples of thermoplastic resins include polyethylene-based, polyvinyl acetate-based, ethylene-vinyl acetate copolymer, polypropylene-based, polyamide-based, polyester-based, and acrylic-based resins. Examples of photocurable resins include acrylic-based and silicone-based resins.

[0014] The bonded substrate T, bonded by the bonding apparatus 1, has a configuration in which a carrier substrate W2, an adhesive layer G, and a processing substrate W1 are stacked in order from the lower vertical side to the upper vertical side. Furthermore, the processing substrate W1 of the bonded substrate T has a metal layer ML at the interface BS with the adhesive layer G, depending on the semiconductor device on the bonding surface W1j side. In addition, each semiconductor device on the processing substrate W1 has recesses Wh, such as trenches or holes, extending from the bonding surface W1j to the non-bonded surface W1n.

[0015] The bonded substrate T, bonded by the bonding device 1, has a total thickness AT which is the sum of the thickness of the processing substrate W1, the thickness of the carrier substrate W2, and the thickness of the adhesive layer G. Then, in the next step, this bonded substrate T is ground by the grinding device 6 to become a ground substrate TG with a thinner total thickness AT', as shown in Figure 2(B).

[0016] Specifically, after the bonding substrate T is formed, the non-bonding surface W1n of the processed substrate W1 is ground by the grinding device 6. As a result, the bottom surface of each recess Wh of the processed substrate W1 is brought close to the non-bonding surface W1n. The ground substrate TG formed in this way can then be extracted as a suitable semiconductor device chip by, for example, going through a subsequent dicing process.

[0017] <Configuration of the Bonding Apparatus> Next, the configuration of the bonding apparatus 1 of the semiconductor manufacturing system that bonds the processing substrate W1 and the carrier substrate W2 will be explained with reference to Figure 3. In the following explanation, the position of each component will be described based on the X-axis, Y-axis, and Z-axis direction indications shown in Figure 3. The X-axis and Y-axis directions are horizontal and mutually orthogonal directions. The Z-axis direction is vertical.

[0018] The joining device 1 comprises an input / output station 2, a first processing station 3, and a second processing station 4. The input / output station 2, the first processing station 3, and the second processing station 4 are installed in this order in the positive direction of the X-axis.

[0019] The loading / unloading station 2 of the bonding device 1 comprises a mounting table 11 and a transport area 12. The mounting table 11 has a cassette C that accommodates multiple substrates in a horizontal position. ｗ１ , Cｗ２ , C ｔ is placed. Cassette C ｗ１ is a cassette that houses the processing substrate W1, and cassette C ｗ２ is a cassette that houses the carrier substrate W2, and cassette C ｔ is a cassette that houses the bonding substrate T. Note that the cassette C ｗ１ , C ｗ２ , C ｔ The number of is not particularly limited.

[0020] The transfer area 12 is arranged adjacent to the positive X-axis side of the mounting table 11. In the transfer area 12, a transfer path 121 extending in the Y-axis direction and a transfer device 122 movable along this transfer path 121 are provided. The transfer device 122 is also movable in the X-axis direction and the Z-axis direction and is rotatable around the Z-axis. The transfer device 122 transfers the processing substrate W1, the carrier substrate W2, and the bonding substrate T between the cassette C ｗ１ , C ｗ２ , C ｔ placed on the mounting table 11 and the first processing station 3.

[0021] The first processing station 3 includes a delivery block 13, a transfer area 14, a plurality of coating devices 15, a plurality of heat treatment devices 16, and a plurality of removal devices 17. The delivery block 13 is arranged adjacent to the positive X-axis side of the transfer area 12. The transfer area 14 is arranged adjacent to the positive X-axis side of the delivery block 13. The coating device 15 and the removal device 17 are arranged adjacent to the negative Y-axis side of the transfer area 14, and the heat treatment device 16 is arranged adjacent to the positive Y-axis side of the transfer area 14. The removal device 17 is, for example, stacked above the coating device 15.

[0022] The delivery block 13 is configured to be able to temporarily place the processing substrate W1, the carrier substrate W2, the bonding substrate T, etc. between the transfer area 12 and the transfer area 14.

[0023] A transport device 141 is positioned in the transport area 14. The transport device 141 is movable in the horizontal direction (X-axis direction, Y-axis direction) and the vertical direction (Z-axis direction), and is rotatable around the Z-axis. The transport device 141 transports the processed substrate W1, carrier substrate W2, and bonded substrate T between the transfer block 13, coating device 15, heat treatment device 16, removal device 17, and the transfer block 18 of the second processing station 4, which will be described later.

[0024] The coating device 15 is a device that applies adhesive to the bonding surface W1j of the processing substrate W1. The heat treatment device 16 is a device that heats the processing substrate W1 to a predetermined temperature after the adhesive has been applied. The removal device 17 is a device that removes the adhesive from the peripheral edge of the processing substrate W1 by supplying an organic solvent to the peripheral edge of the processing substrate W1 to which the adhesive has been applied.

[0025] The second processing station 4 comprises a transfer block 18, a transport area 19, and a plurality of joining modules 20. The transfer block 18 is positioned adjacent to the transport area 14 on the positive X-axis side. The transport area 19 is positioned adjacent to the transfer block 18 on the positive X-axis side. The plurality of joining modules 20 are positioned adjacent to the transport area 19 on the positive Y-axis side and the negative Y-axis side, respectively.

[0026] The transfer block 18 is configured to temporarily hold the processing substrate W1, carrier substrate W2, and bonding substrate T, etc., between the transport area 14 and the transport area 19. The transfer block 18 also includes an aligner device with a reversing mechanism that can adjust the orientation of the processing substrate W1 (horizontal position, circumferential position, etc.) and reverse the upper and lower surfaces of the processing substrate W1 (bonding surface W1j, non-bonding surface W1n). Furthermore, the transfer block 18 includes an aligner device that can adjust the orientation of the carrier substrate W2 (horizontal position, circumferential position, etc.). For example, the aligner device with a reversing mechanism and the aligner device are stacked vertically on the transfer block 18.

[0027] A transport device 191 is positioned in the transport area 19. The transport device 191 is movable in the X-axis, Y-axis, and Z-axis directions, and is rotatable around the Z-axis. The transport device 191 transports the processing substrate W1, carrier substrate W2, and bonding substrate T between the transfer block 18 and the bonding module 20. The bonding module 20 bonds the processing substrate W1 and the carrier substrate W2.

[0028] Furthermore, the bonding apparatus 1 includes a control unit 5 (information processing unit) that controls each component of the apparatus. The control unit 5 is a computer having a processor 51, memory 52, an input / output interface (not shown), and a communication interface. The processor 51 is a combination of one or more of the following: a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an ASIC (Application Specific Integrated Circuit), an FPGA (Field-Programmable Gate Array), or a circuit consisting of multiple discrete semiconductors. The memory 52 includes a main memory and an auxiliary memory. In other words, in this disclosure, the control unit 5 is an electronic circuit having a CPU, GPU, ASIC, FPGA, etc., and performs various control operations described in this specification by executing instruction codes stored in the memory 52 or by circuit design for special applications.

[0029] <Joining Method> The control unit 5 controls each component of the joining device 1 and, for example, executes steps S101 to S109 of the joining method shown in Figure 4 to join the processing substrate W1 and the carrier substrate W2. In the joining method, the control unit 5 uses the transport device 122 of the transport area 12 to transfer the cassette C ｗ１ The processed substrate W1 is removed from the processing area and transported to the transfer block 13, and the transport device 141 in the transport area 14 removes the processed substrate W1 from the transfer block 13 and transports it to the coating device 15. At this time, the processed substrate W1 is transported by the transport devices 122 and 141 with the bonding surface W1j facing upwards and transported to the coating device 15.

[0030] Then, the coating device 15 applies an adhesive to the bonding surface W1j of the processed substrate W1 that has been carried in (step S101). The adhesive applied by the coating device 15 is in a liquid state, and by discharging the adhesive from a nozzle (not shown) to the center of the processed substrate W1, it spreads radially from the center to the outer edge. Thereafter, the control unit 5 controls the transfer device 141 to transfer the processed substrate W1 from the coating device 15 to the heat treatment device 16.

[0031] The heat treatment device 16 heats the processed substrate W1 inside an inert atmosphere (step S102). As a result, the solvent such as an organic solvent in the adhesive applied to the bonding surface W1j of the processed substrate W1 volatilizes, and the adhesive becomes harder than when it was applied. Thereafter, the control unit 5 controls the transfer device 141 to transfer the processed substrate W1 from the heat treatment device 16 to the removal device 17.

[0032] The removal device 17 removes the adhesive applied to the peripheral portion of the bonding surface W1j of the processed substrate W1 (step S103). Thereafter, the control unit 5 controls the transfer device 141 to transfer the processed substrate W1 from the removal device 17 to the delivery block 18.

[0033] The delivery block 18 adjusts the horizontal posture of the processed substrate W1 by an aligner device with an inversion mechanism (not shown) (step S104). Also, the delivery block 18 inverts the bonding surface W1j of the processed substrate W1 that is facing upward to face downward by the aligner device with an inversion mechanism (step S105).

[0034] Thereafter, the control unit 5 controls the transfer device 191 in the transfer area 19 to take out the processed substrate W1 of the delivery block 18 and carry it into the bonding module 20 (step S106).

[0035] Also, the bonding device 1 transfers the carrier substrate W2 at the timing when the first substrate W1 is being processed by an appropriate device. The control unit 5 uses the transfer device 122 in the transfer area 12 to transfer the cassette C ｗ２Remove the carrier substrate W2 therefrom and carry it into the delivery block 13, and take out the carrier substrate W2 in the delivery block 13 by the transfer device 141 in the transfer area 14 and carry it into the delivery block 18. Then, the control unit 5 adjusts the horizontal posture of the carrier substrate W2 by an aligner device (not shown) (step S107).

[0036] After that, the control unit 5 controls the transfer device 191 in the transfer area 19 to take out the carrier substrate W2 in the delivery block 18 and carry it into the bonding module 20 (step S108).

[0037] After the processing substrate W1 and the carrier substrate W2 are respectively carried in, the bonding module 20 performs a bonding process of bonding the processing substrate W1 and the carrier substrate W2 to form a bonded substrate T (step S109). After the formation, the control unit 5 transports the bonded substrate T from the bonding module 20 of the second processing station 4 to the cassette Ct of the loading / unloading station 2 by the transfer devices 191, 141, 122, and accommodates the bonded substrate T in the cassette Ct. Thereby, a series of processes of the bonding device 1 are completed.

[0038] <Bonding Module> Next, the configuration of the bonding module 20 of the bonding device 1 will be described with reference to FIG. 5. The bonding module 20 includes a processing container 21, and a first holding part 22 and a second holding part 23 (holding parts) accommodated inside the processing container 21. The first holding part 22 is disposed above the second holding part 23 in the vertical direction and holds the processing substrate W1. The second holding part 23 holds the carrier substrate W2.

[0039] The processing container 21 is a processing container that can be sealed inside, and includes a first chamber part 211 and a second chamber part 212. The first chamber part 211 is a container with a concave cross-section whose lower part is open, and houses the first holding part 22 and the like inside. The second chamber part 212 is a container with a concave cross-section whose upper part is open, and houses the second holding part 23 and the like inside.

[0040] The first holding section 22 and the second holding section 23 each have electrostatic chucks 221 and 231 for electrostatically adsorbing the processing substrate W1 and the carrier substrate W2, respectively. By using the electrostatic chucks 221 and 231, the processing substrate W1 and the carrier substrate W2 can be reliably held in a reduced-pressure atmosphere. However, the first holding section 22 and the second holding section 23 are not limited to a configuration that applies electrostatic chucks 221 and 231 as means of holding the substrates; for example, a vacuum adsorption mechanism, a mechanical mechanism, etc., may also be applied.

[0041] Furthermore, the first holding section 22 and the second holding section 23 each incorporate heating mechanisms 222 and 232, respectively. The heating mechanism 222 heats the processing substrate W1 held in the first holding section 22, and the heating mechanism 232 heats the carrier substrate W2 held in the second holding section 23. The second holding section 23 also includes a base 233 that supports the electrostatic chuck 231.

[0042] Furthermore, the bonding module 20 includes a base member 24, a pressurizing mechanism 25, a moving mechanism 26, a depressurizing mechanism 27, and an imaging unit 28.

[0043] The base member 24 is fixed to the bottom surface of the first chamber section 211 (the ceiling surface of the processing container 21) and supports the first holding section 22 by suspending it. A guide mechanism is provided between the first holding section 22 and the base member 24 to guide the vertical movement of the first holding section 22.

[0044] The pressurizing mechanism 25 has the function of bringing the processing substrate W1 into contact with the carrier substrate W2 by moving the first holding portion 22 vertically downward, and pressurizing the processing substrate W1 while it is in contact. For example, the pressurizing mechanism 25 comprises an expandable body 251, a gas flow path 252, and a gas supply and discharge source 253.

[0045] The expandable body 251 is made of a stainless steel bellows that is expandable and contractible in the vertical direction. The lower end of the expandable body 251 is connected to the upper surface of the first holding part 22. The upper end of the expandable body 251 is connected to the lower surface of the base member 24. The gas flow path 252 communicates with the space inside the expandable body 251 via the base member 24 and the first chamber part 211. This gas flow path 252 is connected to the gas supply and discharge source 253 via a gas path. The gas supply and discharge source 253 is connected to the control unit 5 and supplies and discharges gas based on the control of the control unit 5.

[0046] The pressurizing mechanism 25, configured in this way, supplies gas from the gas supply / discharge source 253 to the space inside the expandable body 251 via the gas flow path 252, thereby extending the expandable body 251 and lowering the first holding portion 22. As a result, the processing substrate W1 held by the first holding portion 22 comes into contact with the carrier substrate W2. The pressurizing mechanism 25 also adjusts the pressure exerted by the processing substrate W1 on the carrier substrate W2 after contact by adjusting the pressure of the gas supplied to the expandable body 251.

[0047] The moving mechanism 26 has the function of moving the first chamber portion 211 relative to the second chamber portion 212. For example, the moving mechanism 26 moves the first chamber portion 211 vertically, horizontally, and around the vertical axis based on the control of the control unit 5. The joining module 20 adjusts the horizontal and circumferential positions of the processing substrate W1 via the first chamber portion 211 and the first holding portion 22 using the moving mechanism 26, and then lowers the first chamber portion 211 to bring it into contact with the second chamber portion 212. As a result, the inside of the processing container 21 becomes a sealed space when the processing substrate W1 and the carrier substrate W2 are joined. It is preferable that one of the first chamber portion 211 and the second chamber portion 212 is provided with a sealing member 213 that hermetically closes the processing container 21.

[0048] The pressure reduction mechanism 27 is provided, for example, at the bottom of the second chamber section 212 and reduces the pressure inside the processing container 21. The pressure reduction mechanism 27 includes an intake passage 271 that communicates with the inside of the processing container 21, and an intake device 272, such as a vacuum pump, that is connected to the intake passage 271 via an intake path. The intake device 272 generates an suction force in the intake passage 271 based on the control of the control unit 5, thereby sucking out the gas inside the processing container 21.

[0049] The imaging unit 28 includes a first imaging unit 281 and a second imaging unit 282. The first imaging unit 281 is positioned below the first holding unit 22 and images the bonding surface W1j (including adhesive) of the processing substrate W1 held by the first holding unit 22. The second imaging unit 282 is positioned above the second holding unit 23 and images the bonding surface W2j of the carrier substrate W2 held by the second holding unit 23. The first imaging unit 281 and the second imaging unit 282 may be wide-angle CCD cameras, CMOS cameras, etc.

[0050] The first imaging unit 281 and the second imaging unit 282 are movable horizontally by a moving part (not shown), and before lowering the first chamber unit 211, they enter between the first holding unit 22 and the second holding unit 23 to image the processing substrate W1 and the carrier substrate W2. The imaging information from the first imaging unit 281 and the second imaging unit 282 is transmitted to the control unit 5. Based on this imaging information, the control unit 5 controls the operation of the moving mechanism 26 to adjust the horizontal position of the first chamber unit 211, and then lowers the moving mechanism 26.

[0051] Furthermore, the bonding module 20 according to the embodiment includes an infrared sensor 80 as a measuring device 8 for measuring the state of the bonding substrate T. Multiple infrared sensors 80 are provided inside the second holding portion 23. Each infrared sensor 80 is housed in a hole formed in the second holding portion 23 and extends in the vertical direction. As a result, each infrared sensor 80 faces the back surface of the bonding substrate T (the non-bonding surface W2n of the carrier substrate W2) perpendicular to the plane direction.

[0052] Furthermore, each infrared sensor 80 is arranged in a matrix along the horizontal direction, making it possible to measure the in-plane distribution of the bonded substrate T. However, the arrangement of each infrared sensor 80 is not limited to a matrix; for example, multiple sensors may be arranged radially (radially) from the center of the second holding portion 23, as well as multiple sensors may be arranged along the circumferential direction. The measurement of the bonded substrate T by this measuring device 8 (each infrared sensor 80) will be described in detail later.

[0053] The bonding module 20 is basically configured as described above and performs a bonding process to bond the processing substrate W1 and the carrier substrate W2 based on the control of the control unit 5 (step S109 in Figure 4). When the processing substrate W1 is transported below the first holding section 22 by the transport device 191 (see Figure 3), the bonding module 20 attracts the non-bonding surface W1n of the processing substrate W1 by the electrostatic force of the electrostatic chuck 221. Also, when the carrier substrate W2 is transported above the second holding section 23 by the transport device 191, the bonding module 20 attracts the non-bonding surface W2n of the carrier substrate W2 by the electrostatic force of the electrostatic chuck 231.

[0054] Subsequently, the bonding module 20 moves the first imaging unit 281 and the second imaging unit 282 horizontally to image the surfaces of the processing substrate W1 and the carrier substrate W2, respectively. The bonding module 20 operates the movement mechanism 26 so that the position of the reference point of the processing substrate W1 in the imaging information of the first imaging unit 281 coincides with the position of the reference point of the carrier substrate W2 in the imaging information of the second imaging unit 282. This ensures that the processing substrate W1 and the carrier substrate W2 are precisely aligned before bonding.

[0055] Then, after the first imaging unit 281 and the second imaging unit 282 have exited the processing container 21, the bonding module 20 lowers the first chamber unit 211 using the moving mechanism 26. The lower end of the first chamber unit 211 comes into contact with the upper end of the second chamber unit 212, creating a sealed space inside the processing container 21.

[0056] Furthermore, during the bonding process, the bonding module 20 uses a depressurization mechanism 27 to draw gas from inside the processing container 21, thereby reducing the internal pressure of the processing container 21 to a target pressure. The bonding module 20 also uses a heating mechanism 222 in the first holding section 22 and a heating mechanism 232 in the second holding section 23 to heat the processing substrate W1 and the carrier substrate W2 to a target temperature (for example, 200°C to 250°C).

[0057] After the internal pressure of the processing container 21 reaches the target pressure and the processing substrate W1 and carrier substrate W2 reach the target temperature, the bonding module 20 lowers the first holding portion 22 by supplying gas via the pressurizing mechanism 25, as shown in Figure 6. As a result, the processing substrate W1 and carrier substrate W2 come into contact and are pressurized with an appropriate pressure. Consequently, the processing substrate W1 and carrier substrate W2 are bonded together via the adhesive layer G to form a bonded substrate T.

[0058] After the bonding substrate T is formed, the bonding module 20 releases the electrostatic adsorption by the first holding part 22 and raises the first holding part 22 by releasing gas from the space inside the expandable body 251 using the pressurizing mechanism 25. As a result, the bonding substrate T is placed on the second holding part 23. The bonding module 20 also stops the heating of the heating mechanisms 222 and 232 and the depressurization of the depressurization mechanism 27, and opens the processing container 21 by raising the first chamber part 211 using the moving mechanism 26. The bonding device 1 then receives the bonding substrate T from the second holding part 23 using the transport device 191 and transports the bonding substrate T from the bonding module 20.

[0059] <Configuration of the grinding apparatus> Next, the grinding apparatus 6 of the semiconductor manufacturing system will be described with reference to Figure 7. The grinding apparatus 6 grinds the processing substrate W1 of the bonded substrate T formed by the bonding apparatus 1 above to form the ground substrate TG (see also Figure 1). The grinding apparatus 6 according to this embodiment includes a rotary table 61, four chucks 62, three grinding units 63, and one transport robot 64.

[0060] The rotary table 61 holds four chucks 62 at equal intervals around the rotational centerline R1 and rotates around the rotational centerline R1. Each of the four chucks 62 rotates with the rotary table 61 and moves in the order of loading / unloading position A0, primary grinding position A1, secondary grinding position A2, and tertiary grinding position A3.

[0061] The loading / unloading position A0 serves as both the loading position where the bonded substrate T is loaded and the unloading position where the bonded substrate T is unloaded. However, the loading position and unloading position may be different. The primary grinding position A1 is the position where primary grinding of the bonded substrate T is performed by one grinding unit 63. The secondary grinding position A2 is the position where secondary grinding of the bonded substrate T is performed by another grinding unit 63. The tertiary grinding position A3 is the position where tertiary grinding is performed by another grinding unit 63. The grinding device 6 is not limited to a configuration that performs primary, secondary, and tertiary grinding, but may also be configured to perform primary and secondary grinding, primary grinding only, or fourth or higher grinding.

[0062] The transport robot 64 is installed at the loading / unloading position A0. Adjacent to this loading / unloading position A0 is a loader unit (not shown) on which a cassette Ct (see Figure 3) containing multiple bonded substrates T can be set. The transport robot 64 loads the bonded substrates T and unloads the ground substrates TG between the cassette Ct of the loader unit and the chuck 62 which has moved to the loading / unloading position A0.

[0063] The four chucks 62 each hold the carrier substrate W2 side of the bonded substrate T that has been transported at the loading / unloading position A0. Each chuck 62 is mounted on the rotary table 61 so as to rotate around its respective rotation centerline R2 (see Figure 8). The number of chucks 62 is not particularly limited and may be three or fewer, or five or more.

[0064] As shown in Figure 8, the grinding unit 63 includes a movable part 631 on which a grinding tool C is mounted. The grinding tool C contacts the first substrate W1 of the bonded substrate T and grinds the first substrate W1. The grinding tool C includes, for example, a disc-shaped grinding wheel C1 and a plurality of grinding wheels C2 arranged in a ring shape on the outer circumference of the lower surface of the grinding wheel C1. Each grinding wheel C2 has abrasive grains such as fixed abrasive grains or free abrasive grains. In this embodiment, the grinding tool C has a plurality of grinding wheels C2 arranged in a ring shape, but the technology of this disclosure is not limited to this, and for example, a series of grinding wheels C2 may be installed over the entire lower surface of the grinding wheel C1.

[0065] The movable part 631 includes a mounting part 632 on which the grinding tool C is attached, a spindle shaft 633 that holds the mounting part 632 at its lower end, and a spindle motor 634 that rotates the spindle shaft 633. The mounting part 632 is formed in an umbrella shape, and the grinding tool C is attached to its lower surface which extends horizontally. The spindle shaft 633 extends along the vertical direction. The spindle motor 634 rotates the mounting part 632 and the grinding tool C by rotating the spindle shaft 633. The rotational centerline R3 of the grinding tool C is also the rotational centerline of the spindle shaft 633.

[0066] The grinding unit 63 further includes a lifting unit 635 that raises and lowers the movable part 631. The lifting unit 635 includes, for example, a Z-axis guide 636, a Z-axis slider 637 that moves along the Z-axis guide 636, and a Z-axis motor 638 that moves the Z-axis slider 637. The movable part 631 is fixed to the Z-axis slider 637, and the movable part 631 and the grinding tool C move up and down together with the Z-axis slider 637. The lifting unit 635 further includes a position detector 639 that detects the position of the grinding tool C. The position detector 639 detects the rotation of the Z-axis motor 638, for example, and detects the position of the grinding tool C.

[0067] The grinding unit 63 lowers the grinding tool C from the standby position using the lifting unit 635 while rotating the grinding tool C using the movable unit 631. The grinding tool C then contacts the upper surface of the bonded substrate T (the non-bonded surface W1n of the processing substrate W1) and grinds the entire upper surface. The grinding device 6 may also supply grinding fluid to the upper surface of the bonded substrate T during grinding. When the thickness of the processing substrate W1 reaches a set value, the grinding unit 63 stops the lowering of the grinding tool C and raises the grinding tool C back to the standby position.

[0068] As shown in Figure 9, the grinding device 6 is equipped with an inclination angle adjustment unit 65 for adjusting the inclination angle of the rotational centerline R2 of the chuck 62. The inclination angle adjustment unit 65 is provided for every four chucks 62, and the inclination angle is adjusted for each chuck 62. The inclination angle adjustment unit 65 only needs to adjust the inclination angle of the rotational centerline R2 of the chuck 62 relative to the rotational centerline R3 of the grinding tool C. Alternatively, instead of adjusting the inclination angle of the rotational centerline R2 of the chuck 62, the inclination angle of the rotational centerline R3 of the grinding tool C may be adjusted.

[0069] The chuck 62 is mounted on the rotary table 61 via a support base 622 and an inclination angle adjustment unit 65. The support base 622 rotatably supports the chuck 62. The chuck motor 623 (see Figure 8) that rotates the chuck 62 is built into, for example, the support base 622. This support base 622 is supported by a base 624.

[0070] The tilt angle adjustment section 65 has three connecting sections 651 arranged at equal intervals (for example, 120° intervals) around the rotation centerline R2 of the chuck 62. The three connecting sections 651 displaceably connect the base 624 to the rotary table 61.

[0071] For example, the two connecting sections 651 each include a motor 652 and a motion conversion mechanism 653 that converts the rotational motion of the motor 652 into linear motion of the base 624, and adjusts the gaps G1 and G2 between the base 624 and the rotary table 61, respectively. The motion conversion mechanism 653 can be, for example, a ball screw. The remaining connecting section 651 maintains a constant gap between the base 624 and the rotary table 61. However, the remaining connecting section 651 may also be configured to allow adjustment of the gap between the base 624 and the rotary table 61.

[0072] The tilt angle adjustment unit 65 adjusts the tilt angle of the chuck 62 by adjusting the gaps G1 and G2. The tilt angle is set for each grinding position A1, A2, and A3 according to the spindle shaft 633 for each grinding position A1, A2, and A3.

[0073] When the tilt angle of the chuck 62 changes, the contact pressure distribution between the grinding wheel C2 and the processing substrate W1 changes. At positions with high contact pressure, grinding of the processing substrate W1 progresses more than at positions with low contact pressure. Therefore, the grinding device 6 can adjust the radial thickness distribution of the processing substrate W1 by adjusting the tilt angle of the chuck 62.

[0074] Next, the adjustment of the tilt angle will be explained with reference to Figures 10(A) to 10(C). The chuck 62 has a holding surface 621 for holding the bonding substrate T. The holding surface 621 holds the carrier substrate W2 of the bonding substrate T, thereby positioning the processing substrate W1 on its upper surface. The holding surface 621 of the chuck 62 is a conical surface that is symmetrical around the rotational center line R2 of the chuck 62, as highlighted in Figure 10(A), etc. Because the holding surface 621 of the chuck 62 is a conical surface, it is possible to accommodate various radial distributions of the total thickness AT' by adjusting the tilt angle.

[0075] The tilt angle of the chuck 62 is determined by the thickness T of the processed substrate W1 of the substrate TG after grinding. ｗ１The angle is set to be uniform. The inclination angle is corrected assuming that the lower thickness LT is uniform from the center to the periphery of the bonded substrate T. This lower thickness LT is the thickness from the non-bonded surface W2n of the carrier substrate W2 to the interface BS of the adhesive layer G (bonded surface W1j of the first substrate W1), in other words, the distance obtained by adding the thickness of the carrier substrate W2 and the thickness of the adhesive layer G (see also Figure 2(A)).

[0076] For example, as shown in Figure 10(B), if the lower thickness LT gradually increases from the center to the periphery of the bonded substrate T, the tilt angle of the chuck 62 is corrected to be smaller than the reference tilt angle (see Figure 10(A)). Conversely, as shown in Figure 10(C), if the lower thickness LT gradually decreases from the center to the periphery of the bonded substrate T, the tilt angle of the chuck 62 is corrected to be larger than the reference tilt angle. Furthermore, if the remaining thickness gradually decreases or increases from both the center and the periphery of the bonded substrate T to an intermediate point, the thickness T after grinding is also corrected. ｗ１ The tilt angle can be corrected to ensure uniformity.

[0077] Returning to Figure 7, the grinding apparatus 6 includes a control unit 7 that controls each component of the grinding apparatus 6. The control unit 7 is, for example, a computer including a processor 71, memory 72, input / output interfaces (not shown), and communication interfaces, similar to the control unit 5 of the bonding apparatus 1. The memory 72 stores a program that controls the processing performed in the grinding apparatus 6. The processor 71 controls the operation of the grinding apparatus 6 by executing the program stored in the memory 72.

[0078] <Grinding Method> Next, the operation (grinding method) of the grinding device 6 will be explained with reference to Figure 11. The control unit 7 controls each component of the grinding device 6 to execute steps S201 to S209 shown in Figure 11.

[0079] The control unit 7 controls the rotary table 61 and the transport robot 64 to hold the bonding substrate T in the chuck 62 (step S201). The chuck 62 moves to the loading / unloading position A0 by the rotary table 61 and receives the bonding substrate T from the transport robot 64. At this time, the chuck 62 holds the carrier substrate W2 of the bonding substrate T with the processing substrate W1 facing upwards. Subsequently, the chuck 62 moves from the loading / unloading position A0 to the primary grinding position A1 as the rotary table 61 rotates.

[0080] Furthermore, the control unit 7 receives measurement data measured by the measuring device 8 of the bonding device 1 (step S202). Note that the reception of measurement data may occur before the bonding substrate T is brought in.

[0081] Then, based on the acquired measurement data, the control unit 7 controls the tilt angle adjustment unit 65 of the chuck 62, and the thickness T of the processed substrate W1 after primary grinding. ｗ１ The inclination angle is controlled so that the slope is approximately uniform (step S203).

[0082] Next, the grinding unit 63 at the primary grinding position A1 performs primary grinding on the processing substrate W1 (step S204). The amount of grinding performed by the grinding unit 63 in primary grinding is equal to the total thickness AT of the bonded substrate T (or the thickness T of the processing substrate W1). ｗ１ The settings are determined based on the following: ) and so on. The same applies to secondary and tertiary grinding. Note that the thickness T of the processed substrate W1. ｗ１ This can be calculated by subtracting the bottom thickness LT from the total thickness AT.

[0083] For example, in the primary grinding, the processing substrate W1 may be ground with a larger amount of material removed than in the subsequent secondary and tertiary grinding. In other words, the primary grinding is a process of roughly grinding the processing substrate W1, while the secondary and tertiary grinding are performed on the thickness T of the processing substrate W1. ｗ１ This can be a grinding process to fine-tune the chuck. After this primary grinding, the chuck 62 rotates on the rotary table 61 and moves from the primary grinding position A1 to the secondary grinding position A2.

[0084] Based on the acquired measurement data, the control unit 7 controls the tilt angle adjustment unit 65 of the chuck 62 again to adjust the thickness T of the processed substrate W1 after secondary grinding. ｗ１The inclination angle is controlled so that the surface is uniform (step S205).

[0085] Next, the grinding unit 63 at the secondary grinding position A2 performs secondary grinding on the processing substrate W1 (step S206). After this secondary grinding, the chuck 62 is rotated by the rotary table 61 and moves from the secondary grinding position A2 to the tertiary grinding position A3.

[0086] Based on the acquired measurement data, the control unit 7 controls the tilt angle adjustment unit 65 of the chuck 62 again to adjust the thickness T of the processed substrate W1 after tertiary grinding. ｗ１ The inclination angle is controlled so that the surface is uniform (step S207).

[0087] Next, the grinding unit 63 at the tertiary grinding position A3 performs tertiary grinding on the processing substrate W1 (step S208). After this tertiary grinding, the chuck 62 is rotated by the rotary table 61 and moves from the tertiary grinding position A3 to the loading / unloading position A0.

[0088] Finally, the chuck 62 releases its grip on the bonded substrate T, the transfer robot 64 receives the ground substrate TG from the chuck 62, and places the received ground substrate TG into the cassette Ct.

[0089] <Measurement device> The grinding device 6 described above measures the state of the bonded substrate T as follows: total thickness AT (or thickness T of the processed substrate W1) ｗ１), and measurement data such as the lower thickness LT are used. For this reason, it is important for the grinding device 6 to accurately recognize the total thickness AT, lower thickness LT, etc. of the bonded substrate T before grinding. In particular, the lower thickness LT is used as a parameter of the tilt angle adjustment unit 65 that adjusts the tilt angle of the bonded substrate T in the grinding device 6. On the other hand, the adhesive layer G that constitutes the lower thickness LT is affected by waviness and undulation that occurs in the adhesive. For this reason, the thickness of the lower thickness LT (height of the adhesive layer G) may change within the plane of the bonded substrate T. If the recognition of the in-plane distribution of the lower thickness LT is insufficient, problems such as the thickness of the processed substrate W1 that the grinding device 6 grinds will not be uniform will occur. For this reason, the semiconductor manufacturing system according to the embodiment is configured to measure the in-plane distribution of the lower thickness LT, including the carrier substrate W2 and the adhesive layer G, using a measuring device 8 installed in the bonding module 20.

[0090] The total thickness AT of the bonded substrate T is used as a parameter to set the amount of grinding by the grinding tool C on the bonded substrate T (in other words, the amount of descent of the grinding unit 63). This total thickness AT is preferably measured by a displacement sensor (not shown) installed in the bonding module 20. For example, the displacement sensor is installed in the second imaging unit 282. The bonding apparatus 1 can recognize the total thickness AT of the bonded substrate T from the second holding unit 23 based on the change in the vertical position of the bonded substrate T by detecting the vertical position while the displacement sensor enters before the bonded substrate T is discharged.

[0091] The measuring device 8 according to this embodiment is formed by installing a plurality of infrared sensors 80 in the second holding portion 23 of the bonding module 20 of the bonding device 1 (see Figure 5). Each infrared sensor 80 is arranged in a matrix within the second holding portion 23, as described above, in order to detect the in-plane distribution of the lower thickness LT of the bonding substrate T. As shown in Figure 12, each infrared sensor 80 irradiates the bonding substrate T, which is formed by bonding the processing substrate W1 and the carrier substrate W2, with infrared light from below (the vertically lower side of the carrier substrate W2).

[0092] Specifically, the infrared light emitted by each infrared sensor 80 has a wavelength that can penetrate the carrier substrate W2 and the adhesive layer G. For example, the wavelength of the infrared light can be set to a range of 1.1 μm to 6 μm. Infrared light of this wavelength can be easily transmitted through the carrier substrate W2 made of silicon, the adhesive layer G made of resin material, etc. On the other hand, when the infrared light strikes the metal layer ML present at the interface BS between the adhesive layer G and the processing substrate W1, it is reflected without being transmitted through the metal layer ML. Therefore, the infrared sensor 80 can detect the height position of the metal layer ML, in other words, the position (lower thickness LT) of the interface BS between the bonding surface W1j of the processing substrate W1 and the adhesive layer G, by receiving the reflected infrared light that has been reflected from the metal layer ML.

[0093] The bonding apparatus 1 acquires detection information from each infrared sensor 80 in the control unit 5, for example. The control unit 5 has a processor 51 that executes a program stored in the memory 52, thereby constructing a detection information acquisition unit 511, a lower thickness calculation unit 512, and a measurement data transmission unit 513 internally, as shown in Figure 13. In other words, the control unit 5 of the bonding apparatus 1 according to this embodiment also serves as the information processing unit for the measurement device 8.

[0094] The detection information acquisition unit 511 has pre-stored the horizontal coordinates (X coordinate, Y coordinate) of each infrared sensor 80. When each infrared sensor 80 detects the lower thickness LT, the detection information acquisition unit 511 associates the horizontal coordinates of each infrared sensor 80 with the lower thickness LT and stores them in the memory 52. ​​The detection information acquisition unit 511 also acquires detection information of the total thickness AT of the bonded substrate T transmitted from the displacement sensor and stores it in the memory 52. ​​Preferably, the timing for the detection information acquisition unit 511 to detect the lower thickness LT is after the bonded substrate T is formed and the first holding part 22 is separated from the first substrate W1. This allows the control unit 5 to obtain the lower thickness LT of the bonded substrate T more accurately without being subjected to a load from the first holding part 22.

[0095] The lower thickness calculation unit 512 calculates the in-plane distribution of the lower thickness LT once it has finished detecting the lower thickness LT using all the infrared sensors 80 (step (B)). For example, the lower thickness calculation unit 512 can calculate the in-plane distribution of the lower thickness LT by reading the horizontal coordinates and lower thickness LT of each infrared sensor 80 and using a well-known fitting method or the like. As a result, the control unit 5 recognizes and stores the in-plane distribution of the lower thickness LT of the bonded substrate T.

[0096] The measurement data transmission unit 513 then transmits the calculated in-plane distribution of the lower thickness LT of the bonded substrate T and the total thickness AT of the bonded substrate T as measurement data to the control unit 7 of the grinding device 6.

[0097] The control unit 7 of the grinding device 6 includes, for example, a data receiving unit 711, a tilt angle control unit 712, and a grinding unit control unit 713. The data receiving unit 711 receives measurement data transmitted from the control unit 5 of the joining device 1 and stores it in the memory 72. The measurement data includes information on the in-plane distribution of the total thickness AT and the lower thickness LT (including the horizontal coordinates of each infrared sensor 80 and the lower thickness LT).

[0098] The tilt angle control unit 712 controls the tilt angle adjustment unit 65 based on the measurement data of the lower thickness LT. This allows the grinding device 6 to appropriately adjust the tilt angle of the chuck 62 and the bonded substrate T when grinding the bonded substrate T, thereby controlling the in-plane grinding distribution of the processed substrate W1.

[0099] Furthermore, the grinding unit control unit 713 controls the primary to tertiary grinding units 63 based on the measurement data of the total thickness AT. As a result, the grinding device 6 appropriately adjusts the operation of each grinding unit 63 when grinding the bonded substrate T, and grinds the processing substrate W1. Based on the operation of the inclination angle adjustment unit 65 and each grinding unit 63, the processing substrate W1 is ground to a uniform thickness up to the vicinity of the recess Wh (see Figure 2(B)).

[0100] The measuring device 8 of the semiconductor manufacturing system described above measures the bonded substrate T in accordance with the processing flow of the measurement method shown in Figure 14. Specifically, the measurement method includes a step of determining whether or not it is possible to measure the bonded substrate T (step S301), a step of performing a measurement using the infrared sensor 80 (step S302: step (A)), a step of receiving detection information from the infrared sensor 80 in the control unit 5 (information processing unit) and obtaining the lower thickness LT (step S303: step (B)), a step of calculating the in-plane distribution of the lower thickness LT based on detection information from multiple positions in the control unit 5 (step S304), and a step of outputting the lower thickness LT data to the grinding device 6 (step S305: step (C)).

[0101] In step S301, for example, measurement by the infrared sensor 80 is started based on the recognition of the timing when the first holding part 22 separates from the bonded substrate T. In step S302, the infrared sensor 80 irradiates infrared light from the carrier substrate W2 side and receives the reflected infrared light that has passed through the adhesive layer G and reflected off the bonded surface W1j of the processed substrate W1. In step S303, the lower thickness LT (thickness from the carrier substrate W2 to the bonded surface W1j of the processed substrate W1 including the adhesive layer G) is calculated based on the detection information of the infrared sensor 80. As a result, the measuring device 8 can accurately measure the lower thickness LT of the bonded substrate T and transmit the acquired lower thickness LT data to the grinding device 6. With this lower thickness LT data, the semiconductor manufacturing system can set the processing profile for the bonded substrate T. For example, the grinding device 6 can set the grinding profile appropriately and grind the bonded substrate T with high precision.

[0102] As described above, the semiconductor manufacturing system can accurately recognize changes in the height of the adhesive layer G (in-plane distribution of the lower thickness LT) by measuring the lower thickness LT from the carrier substrate W2 side of the bonded substrate T using each infrared sensor 80. The grinding device 6 can use this lower thickness LT measurement data to accurately adjust the tilt angle at appropriate positions on the bonded substrate T. As a result, the semiconductor manufacturing system can improve the grinding accuracy (uniformity of in-plane distribution, etc.) of the processed substrate W1.

[0103] It should be noted that the semiconductor manufacturing system according to this disclosure is not limited to the above-described embodiment and can take various modifications. For example, the semiconductor manufacturing system may not be configured to transmit and receive measurement data of the bonded substrate T between the bonding apparatus 1 and the grinding apparatus 6, but rather to transmit and receive measurement data via a control device 9. The control device 9 manages the measurement data of the bonded substrate T from the bonding apparatus 1 and the measurement data of the ground substrate TG from the grinding apparatus 6, so that this data can be used in subsequent processes (for example, the dicing process).

[0104] Furthermore, the semiconductor manufacturing system is not limited to a configuration in which the measuring device 8 for measuring the lower thickness LT is located inside the bonding apparatus 1. For example, as shown in the modified example in Figure 15, the measuring device 8 may be located outside the bonding apparatus 1 and the grinding apparatus 6. The measuring device 8 located outside the bonding apparatus 1 and the grinding apparatus 6 only measures the lower thickness LT, total thickness AT, etc., of the bonded substrate T, so that the infrared sensor 80, etc., can measure without being affected by the configuration required for substrate processing. Therefore, the measuring device 8 can measure the lower thickness LT, total thickness AT, etc., of the bonded substrate T with even greater accuracy.

[0105] Alternatively, the semiconductor manufacturing system may include a measuring device 8 in the grinding device 6. In this case, the measuring device 8 may be configured to measure the bonded substrate T before it is held in the chuck 62, or it may be configured to measure the bonded substrate T held inside the chuck 62. The measuring device 8 provided inside the grinding device 6 can also measure the lower thickness LT of the bonded substrate T before it is ground by the grinding device 6. Therefore, the control unit 7 of the grinding device 6 can adjust the inclination angle of the chuck 62 based on the measurement data of the lower thickness LT, enabling accurate grinding of the bonded substrate T.

[0106] Furthermore, as shown in the modified example in Figure 16, the measuring device 8 may be equipped with one or more counter-infrared sensors 81 positioned vertically above the bonding substrate T, and these counter-infrared sensors 81 may be used to measure the thickness Tw1 of the processing substrate W1 and the depth Hw1 of the recess Wh. In other words, the counter-infrared sensor 81 is an infrared sensor that performs measurements from the first substrate side. For example, the counter-infrared sensor 81 is attached to a movable unit 82 and configured to be movable horizontally (in the X-axis direction and Y-axis direction) by the movable unit 82. The counter-infrared sensor 81 irradiates the processing substrate W1 with infrared light while moving by the movable unit 82 and receives the reflected light. This counter-infrared sensor 81 can be configured similarly to the infrared sensor 80 which is positioned vertically below the bonding substrate T.

[0107] Infrared light emitted from the counter-infrared sensor 81 above the processing substrate W1 passes through the processing substrate W1, but is reflected when it strikes the metal layer ML or the metal material embedded in the recess Wh. Therefore, the counter-infrared sensor 81 receives the reflected infrared light from the bottom of the metal layer ML and the recess Wh. Based on this detection information, the control unit 5 determines the thickness T from the non-bonding surface W1n of the processing substrate W1 to the metal layer ML (in other words, the bonding surface W1j). ｗ１ This makes it possible to recognize the in-plane distribution of the depth Dh from the non-bonding surface W1n to the bottom of the recess Wh. Furthermore, the grinding device 6 can adjust the amount of grinding of the processing substrate W1 with greater precision by utilizing the depth Dh of the recess Wh.

[0108] For example, the grinding device 6 is set to a grinding amount that is close to the recess Wh with the largest depth Dh, without reaching the recess Wh. This allows the grinding device 6 to grind the substrate W1 up to a position close to the recess Wh while leaving the recess Wh intact. As a result, the ground substrate TG can be used effectively in subsequent processes.

[0109] Furthermore, the measuring device 8 may apply the moving part 82 for moving the opposite infrared sensor 81 to the infrared sensor 80 on the second holding part 23 side. In other words, the infrared sensor 80 may be configured to detect the thickness from the carrier substrate W2 to the bonding surface W1j of the first substrate W1 including the adhesive layer G while moving relative to the bonding substrate T. This allows the measuring device 8 to calculate the in-plane distribution of the lower thickness LT while suppressing the number of infrared sensors 80. Therefore, the infrared sensor 80 for detecting the lower thickness LT is not limited to a configuration in which multiple sensors are provided on the second substrate side, but may be provided as a single sensor.

[0110] The measuring apparatus 8 and measuring method according to the embodiments disclosed herein are illustrative in all respects and are not restrictive. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be otherwise configured and combined in a non-consistent manner.

[0111] This application claims priority to Japanese Patent Application No. 2024-156580, a basic application filed with the Japan Patent Office on September 10, 2024, the entire contents of which are incorporated herein by reference.

[0112] 5 Control unit 8 Measuring device 80 Infrared sensor G Adhesive layer T Bonding substrate W1 First substrate (processing substrate) W1j, W2j Bonding surface W2 Second substrate (carrier substrate)

Claims

1. A measuring device for measuring a bonded substrate having an adhesive layer between a first substrate and a second substrate, wherein the bonding surface of a first substrate and the bonding surface of a second substrate are bonded together with an adhesive, the device comprising: an infrared sensor that irradiates infrared light from the second substrate side of the bonded substrate and receives the reflected light of the infrared light that has passed through the adhesive layer and been reflected at the bonding surface of the first substrate; and an information processing unit that receives detection information from the infrared sensor and obtains the thickness from the second substrate to the bonding surface of the first substrate including the adhesive layer based on the detection information.

2. The measuring apparatus according to claim 1, wherein the information processing unit calculates the in-plane thickness distribution from the second substrate to the bonding surface of the first substrate including the adhesive layer based on the detection information of the infrared sensor.

3. The measuring device according to claim 2, wherein a plurality of infrared sensors are provided in the holding portion of the bonded substrate that holds the second substrate.

4. The measuring device according to claim 2, wherein the infrared sensor detects the thickness from the second substrate to the bonding surface of the first substrate including the adhesive layer while moving relative to the bonding substrate.

5. The measuring device according to any one of claims 1 to 4, comprising an inverse infrared sensor that irradiates the bonded substrate with infrared light from the first substrate side and receives reflected light of the infrared light reflected from the metal layer of the first substrate and the recess of the first substrate, wherein the information processing unit calculates the depth of the recess of the first substrate based on the detection information of the inverse infrared sensor.

6. The measuring device is provided in a semiconductor manufacturing system including a bonding device for bonding the first substrate and the second substrate to form the bonded substrate, and a grinding device for grinding the first substrate of the bonded substrate, wherein the infrared sensor detects the thickness from the second substrate to the bonding surface of the first substrate including the adhesive layer between the time the bonded substrate is formed and before the first substrate of the bonded substrate is ground.

7. The measuring device according to claim 6, wherein the information processing unit outputs thickness data from the acquired second substrate to the bonding surface of the first substrate including the adhesive layer to the grinding device.

8. The measuring device is provided in the joining device, as described in claim 6.

9. The measuring device according to claim 6, wherein the measuring device is provided on the grinding device.

10. The measuring device according to claim 6, wherein the measuring device is provided outside the joining device and the grinding device.

11. A measurement method for measuring a bonded substrate having an adhesive layer between a first substrate and a second substrate, by joining the bonding surface of a first substrate and the bonding surface of a second substrate with an adhesive, comprising: (A) a step of irradiating the bonded substrate with infrared light from the second substrate side using an infrared sensor and receiving the reflected light of the infrared light that has passed through the adhesive layer and reflected from the bonding surface of the first substrate; and (B) a step of receiving detection information from the infrared sensor in an information processing unit and obtaining the thickness from the second substrate to the bonding surface of the first substrate including the adhesive layer based on the detection information.

12. (C) The measurement method according to claim 11, further comprising the step of outputting thickness data from the acquired second substrate to the bonding surface of the first substrate including the adhesive layer from the information processing unit to a grinding device.

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