X-ray detector

Abstract

The present invention provides an X-ray detector comprising: a sensor panel in which pixels having photodiodes are arranged along a plurality of row lines and column lines; a phosphor on the sensor panel; and a light collection member interposed between the sensor panel and the phosphor.

Description

X-ray detector

[0001] The present invention relates to an X-ray detector.

[0002] Recently, digital detectors are widely used for X-ray imaging.

[0003] The fill factor, which refers to the ratio of the sensor area to the light-receiving area in an X-ray detector, is a major factor determining the performance of the detector.

[0004] However, since there is a limit to expanding the light-receiving area due to the pixel structure, there is a limit to increasing the fill factor of the X-ray detector.

[0005] The present invention has an objective of providing a method to improve the fill factor of an X-ray detector.

[0006] To achieve the above objectives, the present invention provides an X-ray detector comprising: a sensor panel in which pixels equipped with photodiodes are arranged along a plurality of row lines and column lines; a phosphor on the sensor panel; and a light-collecting member interposed between the sensor panel and the phosphor.

[0007] The light-gathering member may include one of a light-gathering pattern, such as a prism pattern corresponding to each column line or each row line, a lens pattern corresponding to each pixel, a moth-eye pattern, or a pyramid pattern.

[0008] The above light-gathering pattern can be formed on the sensor panel.

[0009] The above-mentioned light-collecting member may include a base member on which the light-collecting pattern is formed.

[0010] The above-mentioned light-collecting member may include an X-ray shielding material.

[0011] It may further include an optical member interposed between the sensor panel and the light-collecting member or between the light-collecting member and the phosphor.

[0012] The above optical member may include at least one of a diffusion film and a DBEF.

[0013] The above optical member may include an X-ray shielding material.

[0014] The above photodiode may be a single-photon avalanche diode.

[0015] It may further include a sealing film that encloses a laminated structure including the sensor panel, a light-collecting member, and a phosphor.

[0016] The above-mentioned light-collecting member further includes a flattening film covering the light-collecting patterns arranged thereon, and the phosphor may be formed by depositing the phosphor on the upper surface of the flattening film.

[0017] It further includes a cover layer covering the light-gathering patterns arranged on the light-gathering member, and the fluorescent material may be deposited and formed on the upper surface of the cover layer.

[0018] It further includes a sidewall surrounding the above-mentioned light-gathering patterns, and the cover layer can be in contact with the sidewall.

[0019] The above-mentioned covering layer may include a first portion surrounding the light-gathering patterns and a second portion located on the light-gathering patterns.

[0020] The apparatus further includes a substrate on which the above-mentioned phosphor is deposited, and the substrate may be attached to the light-collecting member.

[0021] The above-mentioned light-collecting member may include a light-collecting pattern and an auxiliary light-collecting pattern arranged along the periphery of the light-collecting pattern.

[0022] According to the present invention, a light-collecting member may be interposed between a sensor panel and a phosphor. Accordingly, visible light generated from the phosphor can be collected as it passes through the light-collecting member and supplied to the sensor panel.

[0023] Due to the light-gathering action of this light-gathering element, the amount of light incident on each pixel can be increased, thereby improving the fill factor of the X-ray detector.

[0024] Furthermore, an optical element may be provided along with a light-collecting element between the sensor panel and the phosphor. Accordingly, the light quality is improved, and the fill factor of the X-ray detector can be further improved.

[0025] FIG. 1 is a block diagram schematically illustrating the configuration of an X-ray detector according to a first embodiment of the present invention.

[0026] FIG. 2 is a circuit diagram schematically illustrating an example of the configuration of a pixel of an X-ray detector according to a first embodiment of the present invention.

[0027] FIG. 3 is a cross-sectional view schematically illustrating the structure of an X-ray detector according to a first embodiment of the present invention.

[0028] FIGS. 4 to 7 are drawings illustrating various examples of a light-collecting member according to the first embodiment of the present invention.

[0029] FIG. 8 is a drawing illustrating an example of an encapsulation structure combining a sensor panel, a light-collecting member, and a phosphor according to a first embodiment of the present invention.

[0030] FIGS. 9 and 10 are cross-sectional views schematically illustrating examples of the structure of an X-ray detector according to a second embodiment of the present invention.

[0031] FIG. 11 is a cross-sectional view schematically illustrating a first example of the structure of an X-ray detector according to a third embodiment of the present invention.

[0032] FIG. 12 is a cross-sectional view schematically illustrating a second example of the structure of an X-ray detector according to a third embodiment of the present invention.

[0033] FIG. 13 is a cross-sectional view schematically illustrating a third example of the structure of an X-ray detector according to a third embodiment of the present invention.

[0034] FIG. 14 is a cross-sectional view schematically illustrating an example of the manufacture and structure of an X-ray detector according to a fourth embodiment of the present invention.

[0035] FIG. 15 is a schematic diagram illustrating an example of an X-ray detector according to the fifth embodiment of the present invention.

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0037] <First Example>

[0038] FIG. 1 is a block diagram schematically illustrating the configuration of an X-ray detector according to a first embodiment of the present invention. FIG. 2 is a circuit diagram schematically illustrating an example of the configuration of a pixel of an X-ray detector according to a first embodiment of the present invention. FIG. 3 is a cross-sectional view schematically illustrating the structure of an X-ray detector according to a first embodiment of the present invention.

[0039] Referring to FIGS. 1 to 3, an X-ray detector (10) according to the first embodiment of the present invention may include a sensor panel (or pixel array panel) (100) and a driving circuit (or panel driving circuit).

[0040] Here, the driving circuit may include a scan circuit (120) and a readout circuit (130).

[0041] Meanwhile, the X-ray detector (10) of the present embodiment may be configured as an indirect conversion type detector.

[0042] The X-ray detector (10) configured in this manner may include a phosphor (200) disposed on the light-receiving surface of the sensor panel (100). The phosphor (200) converts the incident X-rays into visible light, and this visible light is provided to the sensor panel (100). A photodiode equipped in a pixel (P) can detect the visible light and generate a corresponding electrical signal.

[0043] Meanwhile, in this embodiment, an example is given in which an avalanche diode (or avalanche light receiving element), more specifically a single-photon avalanche diode (SPAD), is used as the photodiode provided in the pixel (P).

[0044] In this case, the single-photon avalanche diode (SPAD) can detect photons of visible light input to the pixel (P) and generate an electrical signal.

[0045] The sensor panel (100) may include an active area that substantially receives and detects X-rays, and a non-active area located outside the active area.

[0046] A pixel array composed of multiple pixels (P) is placed in the active area, and these multiple pixels (P) can be arranged in a matrix form along multiple row lines and multiple column lines.

[0047] Although not specifically illustrated, a plurality of scan lines (or gate lines) extending along a plurality of row lines and a plurality of signal transmission lines (or data lines) extending along a plurality of column lines may be arranged on the sensor panel (100). These scan lines and signal transmission lines may be connected to corresponding pixels (P).

[0048] The scan circuit (120) can control the sensor panel (100) in row-line units. In this regard, the scan circuit (120) sequentially outputs scan signals to the scan wiring in row-line units, and in response, a pixel (P) of the corresponding row line can be selected.

[0049] The readout circuit (130) is connected to a signal transmission wire extended along each column line and can receive and store a pixel signal (or data signal) output from a pixel (P) of a selected row line through a scan wire. The pixel signal stored in the readout circuit (130) can be output externally.

[0050] A pixel (P) placed on a sensor panel (100) can detect photons of visible light generated from a phosphor (200) using a single-photon avalanche diode (SPAD), generate a corresponding pulse signal to count the number of photons, and output the counted value.

[0051] Referring to FIG. 2 regarding the configuration of the pixel (P), for example, each pixel (P) may include a single-photon avalanche diode (SPAD) and a transistor connected thereto, for example, a recharge transistor (Tre).

[0052] And, the pixel (P) may include a pulse generation circuit (or pulse shaper) (PSC) connected to a node (N) between a single-photon avalanche diode (SPAD) and a recharge transistor (Tre). Additionally, the pixel (P) may include a counter circuit (CC) that counts the number of pulse signals generated by the pulse generation circuit (PSC). In this case, the counter circuit (CC) can count the number of pulse signals of a certain magnitude or greater.

[0053] One electrode (or first electrode), for example, the anode of a single-photon avalanche diode (SPAD), can be connected to the drain electrode (or source electrode) of a recharge transistor (Tre). And, the other electrode (or second electrode), for example, the cathode of the single-photon avalanche diode (SPAD), can be applied a bias voltage (or reverse voltage) (Vb), which is a driving voltage.

[0054] The recharge transistor (Tre) may have its source electrode (or drain electrode) receive a ground voltage (or low potential voltage). Meanwhile, the gate electrode of the recharge transistor (Tre) may be connected, for example, to the output terminal of a pulse generation circuit (PSC). Such a recharge transistor (Tre) may be composed of, for example, an N-type transistor, but is not limited thereto.

[0055] Here, the bias voltage (Vb) is a voltage for operating the single-photon avalanche diode (SPAD) in Geiger mode to generate avalanche amplification, and it is preferable to have a voltage greater than the breakdown (or breakdown) voltage.

[0056] In this way, when a bias voltage (Vb) with a potential higher than the breakdown voltage is applied to operate the single-photon avalanche diode (SPAD), i.e., in the active state, the single-photon avalanche diode (SPAD) generates an electrical signal (or diode signal or detection signal) in response to an incident photon.

[0057] The electrical signal generated in this way can be output through the output terminal, which is the node (N) between the single-photon avalanche diode (SPAD) and the recharge transistor (Tre), and input to the pulse generation circuit (PSC).

[0058] The pulse generation circuit (PSC) converts an input electrical signal into a digital (or square wave) pulse signal and outputs it. The pulse generation circuit (PSC) may be composed of, for example, a number of inverters (more specifically, an even number of inverters), and in this case, the signal conversion operation may be delayed for a certain amount of time (e.g., several ns to several us).

[0059] The pulse signal output in this manner can be provided to a counter circuit (CC). The counter circuit (CC) counts the number of pulse signals generated by the pulse generation circuit (PSC), and this counted value can be output as a pixel signal.

[0060] The pulse signal output from the output terminal of the pulse generation circuit (PSC) can be applied to the recharge transistor (Tre). Accordingly, the recharge transistor (Tre) is turned on, and the single-photon avalanche diode (SPAD) is recharged so that the bias voltage (Vb) is applied again to both ends of the single-photon avalanche diode (SPAD) and becomes an active state capable of detecting photons.

[0061] These sensor panels (100) may be TFT panels based on insulating substrates such as glass or CMOS panels based on semiconductor substrates such as wafers.

[0062] Meanwhile, as previously mentioned, a phosphor (200) that converts incident X-rays into visible light and provides them to the sensor panel (100) may be disposed on the sensor panel (100).

[0063] Furthermore, the X-ray detector (10) of the present embodiment may be provided with a light-collecting member (300) including a light-collecting pattern for collecting light generated from a phosphor (200) and providing it to a sensor panel (100).

[0064] Referring to FIG. 3, the light-collecting member (300) can be positioned between the phosphor (200) and the sensor panel (100). In this way, the light-collecting member (300) is positioned interposed between the light propagation path between the phosphor (200) and the sensor panel (100), so that visible light generated from the phosphor (200) passes through the light-collecting member (300), is collected, and can be provided to the sensor panel (100).

[0065] Due to the light-gathering action of the light-gathering member (300), the amount of light incident on each pixel (P) can be increased, and as a result, the fill factor of the X-ray detector (10) can be improved.

[0066] Various types of such light-collecting members (300) can be used, and this will be explained in more detail below.

[0067] FIGS. 4 to 7 illustrate various examples of a light-collecting member according to a first embodiment of the present invention. In FIGS. 4 and 7, a sensor panel is also illustrated for convenience of explanation.

[0068] First, referring to FIG. 4, a light-collecting member (300) in which a prism pattern (PP) is used as a light-collecting pattern can be used.

[0069] For example, the light-collecting member (300) may be configured to include a base member (301) and a plurality of prism patterns (PP) formed on an upper surface which is one side of the base member (301).

[0070] Here, a plurality of prism patterns (PP) can be arranged parallel to each other in a form that extends along the row or column direction of the sensor panel (100), for example.

[0071] And, each prism pattern (PP) can be placed in a one-to-one correspondence with each row line or each column line of the sensor panel (100), for example. In other words, each prism pattern (PP) can be placed in correspondence with pixels (P) arranged along each column line or each row line. In this case, the width of each prism pattern (PP) can be set to be substantially the same as the width of the pixels (P) arranged in the corresponding row line or column line.

[0072] In this embodiment, for convenience of explanation, an example is given in which the prism pattern (PP) is extended along the thermal direction and arranged in a corresponding manner on a thermal line basis.

[0073] In this way, by using a light-collecting member (300) that includes a prism pattern (PP), light generated from a phosphor (200) can be collected through the prism pattern (PP) and incident on a corresponding pixel (P).

[0074] Accordingly, the amount of light incident on each pixel (P) can be increased. As a result, the amount of light incident on the single-photon avalanche diode (SPAD) formed in the limited light-receiving area within the pixel (P) can be increased.

[0075] In this way, as the amount of light incident on the light receiving area of ​​the pixel (P) increases, the fill factor of the X-ray detector (10) can be improved.

[0076] Next, referring to FIG. 5, a light-collecting member (300) in which a lens pattern (or micro lens pattern) (LP) is used as a light-collecting pattern may be used.

[0077] For example, the light-collecting member (300) may be configured to include a base member (301) and a plurality of lens patterns (LP) formed on an upper surface which is one side of the base member (301).

[0078] Here, a plurality of lens patterns (LP) can be arranged in a matrix form along the row and column directions of the sensor panel (100), for example.

[0079] More specifically, each lens pattern (LP) can be positioned to correspond one-to-one with each pixel (P) of the sensor panel (100), for example. In this case, the width of each lens pattern (LP) can be set to be substantially the same as the width of each pixel (P).

[0080] The size of such a lens pattern (LP) can be formed in a micro size corresponding, for example, to the size of a pixel (P). Also, the shape of the lens pattern (LP) can be, for example, a hemispherical shape and can be a semicircular shape when viewed in cross-section, but is not limited thereto.

[0081] In this way, by using a light-collecting member (300) that includes a lens pattern (LP), light generated from a phosphor (200) can be collected through the lens pattern (LP) and incident on a corresponding pixel (P).

[0082] Accordingly, the amount of light incident on each pixel (P) can be increased. As a result, the amount of light incident on the single-photon avalanche diode (SPAD) formed in the limited light-receiving area within the pixel (P) can be increased.

[0083] In this way, as the amount of light incident on the light receiving area of ​​the pixel (P) increases, the fill factor of the X-ray detector (10) can be improved.

[0084] Next, referring to FIG. 6, a light-collecting member (300) using a moth-eye pattern (MEP) as a light-collecting pattern may be used.

[0085] For example, the light-collecting member (300) may be configured to include a base member (301) and a plurality of moth eye patterns (MEP) formed on the upper surface, which is one side of the base member (301).

[0086] Here, a plurality of moth-eye patterns (MEP) can be arranged in a matrix form along the row and column directions of the sensor panel (100), for example.

[0087] More specifically, each moth eye pattern (MEP) can be placed in a one-to-one correspondence with each pixel (P) of the sensor panel (100), for example. In this case, the width of each moth eye pattern (MEP) can be set to be substantially the same as the width of each pixel (P).

[0088] The size of such a moth-eye pattern (MEP) can be formed in a micro size corresponding to, for example, the size of a pixel (P). Also, the shape of the moth-eye pattern (MEP) can have, for example, a peak shape that rises convexly upward. Meanwhile, in a broad sense, the moth-eye pattern (MEP) can be included in the category of the lens pattern (LP) of FIG. 5.

[0089] In this way, by using a light-collecting member (300) that includes a moth-eye pattern (MEP), light generated from a phosphor (200) through the moth-eye pattern (MEP) can be collected and incident on a corresponding pixel (P).

[0090] Accordingly, the amount of light incident on each pixel (P) can be increased. As a result, the amount of light incident on the single-photon avalanche diode (SPAD) formed in the limited light-receiving area within the pixel (P) can be increased.

[0091] In this way, as the amount of light incident on the light receiving area of ​​the pixel (P) increases, the fill factor of the X-ray detector (10) can be improved.

[0092] Next, referring to FIG. 7, a light-collecting member (300) in which a pyramid pattern (PYP) is used as a light-collecting pattern can be used.

[0093] For example, the light-collecting member (300) may be configured to include a base member (301) and a plurality of pyramid patterns (PYP) formed on an upper surface which is one side of the base member (301).

[0094] Here, a plurality of pyramid patterns (PYP) can be arranged in a matrix form along the row and column directions of the sensor panel (100), for example.

[0095] More specifically, each pyramid pattern (PYP) can be placed in a one-to-one correspondence with each pixel (P) of the sensor panel (100), for example. In this case, the width of each pyramid pattern (PYP) can be set to be substantially the same as the width of each pixel (P).

[0096] The size of such pyramid pattern (PYP) can be formed in a micro size corresponding to, for example, the size of a pixel (P).

[0097] In this way, by using a light-collecting member (300) that includes a pyramid pattern (PYP), light generated from a phosphor (200) can be collected through the pyramid pattern (PYP) and incident on a corresponding pixel (P).

[0098] Accordingly, the amount of light incident on each pixel (P) can be increased. As a result, the amount of light incident on the single-photon avalanche diode (SPAD) formed in the limited light-receiving area within the pixel (P) can be increased.

[0099] In this way, as the amount of light incident on the light receiving area of ​​the pixel (P) increases, the fill factor of the X-ray detector (10) can be improved.

[0100] As described above, various types of light-gathering members (300) can be used to improve the fill factor. For example, the light-gathering pattern of the light-gathering member (300) mentioned above, namely a prism pattern, a lens pattern, a moth-eye pattern, a pyramid pattern, etc., may be formed on the upper surface of the sensor panel (100) in a one-to-one correspondence with the pixel without a base member (301).

[0101] In addition, the light-collecting member is in the form of an X-ray shielding material with a high atomic number, such as Pb, Ti, or BNNT, mixed within a light-transmitting material such as resin or glass, and may be, for example, lead glass or ITO. It is appropriate for the light transmittance of such a light-collecting member to be 80% or more, preferably 90% or more, and as the shielding material is mixed, it is possible to prevent the sensor panel, etc. from deteriorating due to X-rays that have passed through the phosphor.

[0102] Meanwhile, in the X-ray detector (10) of the present embodiment, the sensor panel (100), the light-collecting member (300), and the phosphor (200) can be attached to each other and combined, for example, using an adhesive member.

[0103] Accordingly, the sensor panel (100) and the light collecting member (300) can be joined together using an adhesive member, such as OCA, interposed between them. Likewise, the light collecting member (300) and the phosphor (200) can be joined together using an adhesive member, such as OCA, interposed between them.

[0104] In this way, the sensor panel (100), the light collecting member (300), and the phosphor (200) can be combined and modularized through an adhesive member.

[0105] As another example, the sensor panel (100), the light-collecting member (300), and the phosphor (200) can be combined using a sealing film without an adhesive member. This is examined with reference to FIG. 8.

[0106] FIG. 8 is a drawing illustrating an example of an encapsulation structure combining a sensor panel, a light-collecting member, and a phosphor according to the first embodiment of the present invention.

[0107] Referring to FIG. 8, the X-ray detector (10) may be provided with a sealing film (400) that encloses a stacked structure of a sensor panel (100), a light-collecting member (300), and a phosphor (200).

[0108] In this way, the sealing film (400) is formed to wrap around the stacked structure of the sensor panel (100), the light-collecting member (300), and the phosphor (200), so that the stacked structure can be combined and modularized without an adhesive member.

[0109] Meanwhile, the sealing film (400) can be formed, for example, with parylene, but is not limited thereto.

[0110] <Second Embodiment>

[0111] FIGS. 9 and 10 are cross-sectional views schematically illustrating examples of the structure of an X-ray detector according to a second embodiment of the present invention.

[0112] In this embodiment, a detailed description of a configuration identical or similar to the first embodiment described above may be omitted.

[0113] Referring to FIGS. 9 and 10, in the X-ray detector (10) of the present embodiment, an optical member (500) for improving optical characteristics may be disposed together with a light-collecting member (300) between a sensor panel (100) and a phosphor (200). The optical member (500) can minimize optical distortion caused by the light-collecting member (300), such as light interference or diffraction like Moire.

[0114] In this regard, for example, as shown in FIG. 9, the optical member (500) may be interposed between the sensor panel (100) and the light-collecting member (300). As another example, as shown in FIG. 10, the optical member (500) may be interposed between the light-collecting member (300) and the phosphor (200).

[0115] The optical member (500) may include at least one optical film. For example, the optical member (500) may include at least one of a diffusion film and a DBEF (Dual Brightness Enhancement Film), but is not limited thereto. Here, the DBEF may be, for example, a reflective polarizing film, but is not limited thereto.

[0116] In addition, at least one of the optical member (500) and the light-collecting member (300) is in the form of a light-transmitting material such as resin or glass in which an X-ray shielding material with a high atomic number, such as Pb, Ti, or BNNT, is mixed, for example, lead glass or ITO. In this case, the light transmittance of the optical member (500) and the light-collecting member (300) is 80% or more, preferably 90% or more, and as the shielding material is mixed in at least one, it is possible to prevent the sensor panel, etc. from deteriorating due to X-rays that have passed through the phosphor.

[0117] The optical member (500) can be combined, for example, through an adhesive member and a configuration disposed on its upper and lower portions. As another example, similar to the structure shown in FIG. 8, the sensor panel (100), the light collecting member (300), the optical member (500), and the phosphor (200) can be combined using a sealing film without an adhesive member.

[0118] As described above, the optical member (500) of the present embodiment may be configured using a diffusion film with light diffusion characteristics or a DBEF with selective transmission characteristics. By using the optical member (500) configured in this way, the light uniformity or light concentration can be increased, thereby improving the light quality.

[0119] Accordingly, by providing an optical member (500) together with a light-collecting member (300), the light quality is improved, and the fill factor of the X-ray detector (10) can be further improved.

[0120] As described above, according to embodiments of the present invention, a light-collecting member may be interposed between a sensor panel and a phosphor. Accordingly, visible light generated from the phosphor can be collected while passing through the light-collecting member and provided to the sensor panel.

[0121] Due to the light-gathering action of this light-gathering element, the amount of light incident on each pixel can be increased, thereby improving the fill factor of the X-ray detector.

[0122] Furthermore, an optical element may be provided along with a light-collecting element between the sensor panel and the phosphor. Accordingly, the light quality is improved, and the fill factor of the X-ray detector can be further improved.

[0123] <Third Embodiment>

[0124] FIG. 11 is a cross-sectional view schematically illustrating a first example of the structure of an X-ray detector according to the third embodiment of the present invention.

[0125] In this embodiment, specific descriptions of configurations identical or similar to those in the first and second embodiments described above may be omitted.

[0126] Referring to FIG. 11, in the X-ray detector (10) of the first example of the present embodiment, a flattening film (320), which is a laminated film that flattens the surface by covering the light-collecting member (300), may be formed.

[0127] Meanwhile, in the first example of FIG. 11, for convenience of explanation, a lens pattern (LP) is used as the light-gathering pattern of the light-gathering member (300) as an example, but is not limited thereto and other types of patterns may be used.

[0128] The flattening film (320) can be formed to cover all of the lens patterns (LP) of the light-collecting member (300), for example, and in this case, the upper surface of the flattening film (320) can be formed as a flat surface.

[0129] Accordingly, the surface of the light-collecting member (300) on which the flattening film (320) is formed can have a substantially flat state due to the flattening film (320).

[0130] In this case, a phosphor (200) can be formed by directly depositing it on a flattened film (320). For example, the phosphor (200) can be formed by growing a phosphor material that forms the phosphor (200) on the flattened film (320) into a columnar crystal structure during the deposition process.

[0131] In this way, when a phosphor (200) is formed on the flattening film (320), the columnar crystal structure of the phosphor (200) can be grown uniformly.

[0132] In this regard, when a phosphor (200) is directly formed on a lens pattern (LP), the columnar crystal structure grows unevenly due to the uneven structure of the lens pattern (LP), and light leakage may be induced.

[0133] On the other hand, according to the present embodiment, by adding a flattening film (320) covering the lens pattern (LP), the phosphor (200) deposited on the upper surface of the flattening film (320) can have a uniformly formed columnar crystal structure, thereby preventing light leakage.

[0134] Meanwhile, the planarization film (320) can be formed from an insulating material with high light transmittance, for example, with a light transmittance of 90% or more, and can be formed from one or more selected from Epoxy, PDMS, PMMA, Acryl, SU-8, SiO2, CaF2, MgF2, and Al2O3.

[0135] FIG. 12 is a cross-sectional view schematically illustrating a second example of the structure of an X-ray detector according to the third embodiment of the present invention.

[0136] Referring to FIG. 12, in the second example of the present embodiment, an X-ray detector (10) may have a side wall (330) formed along the edge of a light-collecting member (300) and a cover layer (350) covering the light-collecting member (300).

[0137] The sidewall (330) may, for example, be formed on the edge of the base member (301) and surround an area (or lens pattern array) in which lens patterns (LP) are arranged. Here, the height of the sidewall (330) may, for example, be greater than the height of the lens pattern (LP) placed on its inner side.

[0138] And, the cover layer (350) may be placed on the lens patterns (LP) while in contact with, for example, the upper surface of the side wall (330), so as to cover all of the lens patterns (LP). At this time, the lower surface of the cover layer (350) may be in contact with the lens patterns (LP) or spaced apart by a predetermined distance.

[0139] This covering layer (350) can be formed, for example, from a material that has high light transmittance and is rigid, such as glass or resin. In some cases, the covering layer (350) may be referred to as a rigid layer. Such a covering layer (350) may have a substantially flat shape.

[0140] As described above, the combination of the side wall (330) and the cover layer (350) can define a receiving space in which lens patterns (LP) are placed. In other words, the combination of the side wall (330) and the cover layer (350) can seal the lens patterns (LP).

[0141] A phosphor (200) can be formed by directly depositing it on the cover layer (350) formed as described above.

[0142] In this way, when a phosphor (200) is formed on a flat cover layer (350), the columnar crystal structure of the phosphor (200) can be grown uniformly, thereby preventing light leakage.

[0143] FIG. 13 is a cross-sectional view schematically illustrating a third example of the structure of an X-ray detector according to a third embodiment of the present invention.

[0144] Referring to FIG. 13, in the X-ray detector (10) of the third example of the present embodiment, a cover layer (or sealing layer) (360) in the form of sealing the lens patterns (LP) of the light-collecting member (300) may be formed.

[0145] The cover layer (or second cover layer) (360) of the third example may have a shape similar to a combination of the side wall (330) and the cover layer (or first cover layer) (350) of the second example, for example.

[0146] Accordingly, the cover layer (360) of the third example may be composed of, for example, a first portion (or sidewall portion) formed on the edge of the base member (301) and surrounding an area (or lens pattern array) where lens patterns (LP) are arranged, and a second portion (or cover portion) disposed on the lens patterns (LP) and covering them.

[0147] This covering layer (360) can be formed from a material that has high light transmittance and is rigid, for example, glass or resin.

[0148] The second part of such a cover layer (360) can have a substantially flat shape.

[0149] As described above, the cover layer (360) can define a receiving space in which lens patterns (LP) are placed. In other words, the cover layer (360) can seal the lens patterns (LP).

[0150] A phosphor (200) can be formed by directly depositing it on the cover layer (360) formed as described above.

[0151] In this way, when a phosphor (200) is formed on a flat cover layer (360), the columnar crystal structure of the phosphor (200) can be grown uniformly, thereby preventing light leakage.

[0152] <Fourth Example>

[0153] FIG. 14 is a cross-sectional view schematically illustrating an example of the manufacture and structure of an X-ray detector according to the fourth embodiment of the present invention.

[0154] In this embodiment, specific descriptions of configurations identical or similar to those in the first, second, and third embodiments described above may be omitted.

[0155] Referring to FIG. 14, in manufacturing the X-ray detector (10) of the present embodiment, for example, a phosphor (200) can be formed on a separate substrate (210) through a deposition process to form a phosphor panel. Then, this phosphor panel can be bonded to a combination of a sensor panel (100) and a light-collecting member (300).

[0156] Accordingly, an X-ray detector (10) composed of a sensor panel (100), a light-collecting member (300), and a phosphor panel can be manufactured.

[0157] Here, when bonding the phosphor panel to the combination of the sensor panel (100) and the light-collecting member (300), the substrate (210) may be configured to be attached to the light-collecting member (300). In other words, when manufacturing the X-ray detector (10), the bonding process may be carried out such that the substrate (210) is positioned between the phosphor (200) and the light-collecting member (300).

[0158] In this way, in the present embodiment, a phosphor (200) can be formed by growing it on a flat substrate (210). Accordingly, the phosphor (200) can have a uniformly formed columnar crystal structure, thereby preventing light leakage.

[0159] Meanwhile, after the bonding process, the fluorescent panel, the light-collecting member (300), and the sensor panel (100) can be physically and firmly fixed using a mechanism or the like.

[0160] <5th Example>

[0161] FIG. 15 is a schematic diagram illustrating an example of an X-ray detector according to the fifth embodiment of the present invention, and more specifically, a schematic plan view illustrating an example of a light-gathering pattern formed on a light-gathering member.

[0162] In this embodiment, specific descriptions of configurations identical or similar to the first, second, third, and fourth embodiments described above may be omitted.

[0163] Referring to FIG. 15, the collecting member (300) of the X-ray detector of the present embodiment may have a collecting pattern (or main collecting pattern) and an auxiliary collecting pattern formed around it.

[0164] Meanwhile, in this embodiment, for convenience of explanation, a lens pattern (LP) is used as the light-gathering pattern of the light-gathering member (300) as an example, but is not limited thereto and other types of patterns may be used.

[0165] In this case, one or more auxiliary lens patterns (AP) may be formed along the periphery of the lens pattern (LP). In this embodiment, for convenience of explanation, an example is given in which multiple auxiliary lens patterns (AP) are arranged along the periphery of the lens pattern (LP).

[0166] In this regard, for example, a lens pattern (LP) that performs a main light-gathering function and an auxiliary lens pattern (AP) that performs an auxiliary light-gathering function may be arranged corresponding to each pixel (P).

[0167] The lens pattern (LP) can be formed, for example, so that its center substantially coincides with that of the corresponding pixel (P).

[0168] Additionally, an auxiliary lens pattern (AP) positioned around a lens pattern (LP) may have a smaller size (or area or width) than, for example, the lens pattern (LP). Furthermore, the auxiliary lens pattern (AP) may be positioned symmetrically along the periphery of the lens pattern (LP).

[0169] In this way, by placing an auxiliary lens pattern (AP) around the lens pattern (LP), the amount of light can be increased due to the auxiliary lens pattern (AP), and as a result, the fill factor of the X-ray detector can be improved.

[0170] The embodiments of the present invention described above are examples of the present invention, and free modifications are possible within the scope included in the spirit of the present invention. Accordingly, the present invention includes modifications of the present invention within the scope of the appended claims and equivalents.

Claims

1. A sensor panel in which pixels equipped with photodiodes are arranged along a plurality of row lines and column lines; A phosphor on the sensor panel above; An X-ray detector comprising a light-collecting member interposed between the sensor panel and the phosphor.

2. In Paragraph 1, The above-described light-gathering member is an X-ray detector comprising a light-gathering pattern among a prism pattern corresponding to each column line or each row line, a lens pattern corresponding to each pixel, a moth-eye pattern, and a pyramid pattern.

3. In Paragraph 1, The above-mentioned light-gathering pattern is an X-ray detector formed on the sensor panel.

4. In Paragraph 1, The above-mentioned light-gathering member is an X-ray detector comprising a base member having the light-gathering pattern formed thereon.

5. In Paragraph 1, The above-mentioned light-gathering member is an X-ray detector comprising an X-ray shielding material.

6. In Paragraph 1, An X-ray detector further comprising an optical member interposed between the sensor panel and the light-collecting member or between the light-collecting member and the phosphor.

7. In Paragraph 6, The above optical element is an X-ray detector comprising at least one of a diffusion film and a DBEF.

8. In Paragraph 6, The above optical member is an X-ray detector comprising an X-ray shielding material.

9. In Paragraph 1, The above photodiode is an X-ray detector that is a single-photon avalanche diode.

10. In any one of paragraphs 1 through 9, An X-ray detector further comprising a sealing film that encloses a laminated structure including the sensor panel, a light-collecting member, and a phosphor.

11. In Paragraph 1, It further includes a flattening film covering light-gathering patterns arranged on the light-gathering member, and An X-ray detector formed by depositing the fluorescent material on the upper surface of the planarization film.

12. In Paragraph 1, It further includes a cover layer covering the light-gathering patterns arranged on the light-gathering member, and An X-ray detector formed by depositing the fluorescent material on the upper surface of the above-mentioned cover layer.

13. In Paragraph 12, It further includes a sidewall surrounding the above-mentioned light-gathering patterns, and The above cover layer is an X-ray detector in contact with the sidewall.

14. In Paragraph 12, The above-mentioned covering layer comprises a first portion surrounding the light-gathering patterns and a second portion located on the light-gathering patterns, in an X-ray detector.

15. In Paragraph 1, The substrate on which the above-mentioned phosphor is deposited further comprises, The above substrate is an X-ray detector attached to the above-mentioned light-collecting member.

16. In Paragraph 1, The above-described focusing member is an X-ray detector comprising a focusing pattern and an auxiliary focusing pattern arranged along the surroundings of the focusing pattern.

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