Variable-distance electrode structure of plasma chamber

Abstract

The present invention relates to an electrode structure of a plasma chamber capable of reducing noise in a plasma signal inside the plasma chamber, and more specifically, relates to a device and system capable of reducing, by changing the shape of an ionization electrode of the plasma chamber, noise caused by the changing pressure of plasma during ionization and the resulting fluctuations in the density or brightness of plasma.

Description

Plasma chamber distance variable electrode structure

[0001] The present invention relates to a plasma chamber distance variable electrode structure, and more specifically, to a plasma chamber distance variable electrode structure that can prevent the phenomenon in which the brightness or density of the plasma changes discontinuously during ionization by variably forming the electrode shape of the mutually opposing portion between the RF electrode and the ground electrode disposed in the plasma chamber.

[0002] This research was conducted with support from the following Republic of Korea National Research and Development Project.

[0003] [(Institution) Sub-project No.] 20022707

[0004] [Ministry Name] Ministry of Trade, Industry and Energy

[0005] [Name of Project Management (Specialized) Agency] Korea Institute of Industrial Technology Evaluation and Management

[0006] [Research Project Name] Materials and Components Technology Development Project (Package Type)

[0007] [Project Title] Development of self plasma chamber and 50 amu grade mass spectrometer

[0008] [Name of Project Performing Organization] Nanotech Co., Ltd.

[0009] [Research Period] 20221001 ~ 20260131

[0010] Recently, processes requiring high precision, such as semiconductor and display manufacturing, have been on the rise. As these processes are significantly affected by even minute impurities, there is increasing demand for systems capable of accurately detecting micro-contamination components by diagnosing gases generated during the manufacturing process in real time.

[0011] Residual Gas Analyzers (RGAs), which are primarily used for conventional process gas analysis, utilize the Electron Collision Ionization (EI) method; however, this has the disadvantage that contamination from filaments can occur during the ionization process. Consequently, there has recently been an increasing demand for gas analyzers combined with plasma ionization devices that generate almost no impurities.

[0012] However, conventional plasma chambers generate noise phenomena in which plasma density or brightness fluctuates significantly and discontinuously as plasma pressure changes during ionization, which can affect processes requiring high precision. Since pressure changes during semiconductor processes and / or substrate deposition, etching, etc., are inevitable, it is necessary to resolve the aforementioned noise phenomenon.

[0013] The matters described in the background technology above are intended to aid in understanding the background of the invention and may include matters that are not disclosed prior art.

[0014] The present invention relates to an electrode of a plasma chamber and aims to resolve a noise phenomenon in which the density or brightness of the plasma fluctuates discontinuously and significantly as the pressure of the plasma changes during ionization in the plasma chamber.

[0015] In addition, conventional plasma chambers aim to solve the problem of contamination or corrosion caused by the analysis sample or ionized sample on the RF electrode or ground electrode inside the chamber, which affects the analysis process.

[0016] Meanwhile, since pressure fluctuations during processes such as deposition and etching on semiconductor processes and / or substrates are inevitable, it is necessary to improve the aforementioned noise phenomenon.

[0017] The objective of the present invention is to provide a plasma chamber variable electrode capable of solving the above-mentioned problems and improving the efficiency of precision processes and the accuracy of analysis.

[0018] In a self-plasma chamber connected to a process chamber of the present invention for solving the above-mentioned technical problem and forming a space for making an internal gas into a plasma state,

[0019] A self-plasma chamber may include a main body forming the outer shape of the self-plasma chamber, an RF electrode placed inside or outside the main body to which a high-frequency power source is applied, and a first ground electrode placed inside or outside the main body spaced apart from the RF electrode and connected to ground.

[0020] The RF electrode may have at least one of a convex portion and a concave portion formed in the portion where the RF electrode faces the first ground electrode.

[0021] The self-plasma chamber may include a second ground electrode connected to ground, which is positioned inside or outside the main body and spaced apart from the RF electrode, and the second ground electrode may be positioned opposite the first ground electrode and the RF electrode.

[0022] The RF electrode may have at least one of a convex portion and a concave portion formed in the part where the RF electrode faces the second ground electrode.

[0023] The first ground electrode may have at least one of a convex portion and a concave portion formed in the portion where the first ground electrode faces the RF electrode.

[0024] The second ground electrode may have at least one of a convex portion and a concave portion formed in the portion where the second ground electrode faces the RF electrode.

[0025] A gas analysis system comprising a self-plasma chamber connected to a process chamber and forming a space for making internal gas into a plasma state, and a gas analysis device connected to the self-plasma chamber, wherein the self-plasma chamber may include a main body constituting the outer shape of the self-plasma chamber, an RF electrode disposed inside or outside the main body to which a high-frequency power source is applied, and a first ground electrode disposed inside or outside the main body and connected to ground, spaced apart from the RF electrode, and at least one of a convex portion and a concave portion may be formed in the portion where the RF electrode faces the first ground electrode, and the gas analysis device may include an analysis unit that analyzes the gas of the process chamber that reacts with the plasma generated in the self-plasma chamber and a control unit that controls the gas analysis device.

[0026] The self-plasma chamber may include a second ground electrode connected to ground, which is positioned inside or outside the main body and spaced apart from the RF electrode, and the second ground electrode may be positioned opposite the first ground electrode and the RF electrode.

[0027] The RF electrode may have at least one of a convex portion and a concave portion formed in the part where the RF electrode faces the second ground electrode.

[0028] At least one of a convex portion and a concave portion may be formed in the first ground electrode in the portion facing the RF electrode.

[0029] At least one of a convex portion and a concave portion may be formed in the second ground electrode in the portion facing the RF electrode.

[0030] The gas analysis device may include at least one of a photoemission spectrometer that analyzes the light of the plasma generated in the self-plasma chamber and a mass spectrometer that analyzes a sample introduced into the self-plasma chamber.

[0031] According to the present invention, by modifying the shape of the ionization electrodes of a plasma chamber to variably form the distance between the electrodes, there is an effect of improving the noise phenomenon in which the density or brightness of the plasma fluctuates discontinuously as the pressure of the plasma changes during ionization in the plasma chamber.

[0032] Specifically, the invention improves the aforementioned plasma noise phenomenon by forming the shape of the electrode portions facing each other between the RF electrode and the ground electrode of the plasma chamber as a variable electrode including at least one concave or convex shape, thereby varying the distance between the RF electrode and the ground electrode inconsistently, and has the effect of increasing the accuracy and reliability of process gas analysis.

[0033] In addition, the present invention has the effect of preventing the experimental value from being affected by contamination of the electrode by allowing the RF electrode or ground electrode to be placed externally.

[0034] FIG. 1 is a drawing for explaining a gas analysis system according to one embodiment of the present invention.

[0035] FIG. 2 is a diagram showing a variable electrode structure of a plasma chamber according to one embodiment of the present invention.

[0036] FIG. 3 is a cross-sectional view illustrating a variable electrode structure of a plasma chamber according to one embodiment of the present invention.

[0037] Figure 4 is an enlarged view of area A of Figure 3.

[0038] Figure 5 is a diagram showing the case where the distance between the RF electrode and the ground electrode is constant.

[0039] FIG. 6 is a diagram showing a case where the distance between the RF electrode and the ground electrode is not constant, as in the embodiments of the present invention.

[0040] FIG. 7 is a diagram illustrating a method for implementing variable electrodes according to embodiments of the present invention.

[0041] Figure 8 is a graph showing the change in plasma brightness of a plasma chamber when the distance between the RF electrode and the ground electrode of the plasma chamber, as illustrated in Figure 6, is constant.

[0042] FIG. 9 is a graph showing the change in plasma brightness of a plasma chamber with a variable electrode applied, in which the distance between the RF electrode and the ground electrode of the plasma chamber is not constant, as shown in FIG. 2 to 4, 6 and 7.

[0043] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0044] The embodiments are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention.

[0045] The terms used herein are for describing specific embodiments and are not intended to limit the invention. Additionally, the singular form in this specification may include the plural form unless the context clearly indicates otherwise. Terms such as “comprising,” “having,” and “having” in this application are intended to specify the presence of features, numbers, steps, actions, components, parts, or combinations thereof of the invention, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0046] In the description of the embodiments, where each layer (film), region, pattern, or structure is described as being formed "on" or "under" the substrate, each layer (film), region, pad, or pattern, "on" and "under" include both being formed "directly" and "indirectly" through another layer. In addition, the reference for the top or bottom of each layer is, in principle, based on the drawings.

[0047] The drawings are intended solely to facilitate an understanding of the concept of the present invention and should not be interpreted as limiting the scope of the invention. Additionally, relative thicknesses, lengths, or sizes in the drawings may be exaggerated for convenience and clarity of explanation.

[0048] The statement that it is connected to the process chamber (10) within the specification may include not only being directly connected to the process chamber (10) but also being indirectly connected through valves, pipes, etc. That is, it may mean being connected so that fluids can communicate.

[0049] The structure of the gas analysis system (1) and the self plasma chamber (100) within the specification is merely an example for illustrative purposes and does not limit the configuration and sub-configurations to their positions in the drawings.

[0050] In this specification, the gas analysis system (1) is described as being connected to a process chamber (10) to analyze the gas in the process chamber (10), but embodiments of the present invention may be applicable to an analysis system that analyzes a sample by ionizing the sample through plasma without being connected to a process chamber (10).

[0051] Additionally, although the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) are depicted as having a certain thickness in the drawings of this specification, this is for illustrative purposes only and is not limited to the thickness shown in the drawings, and may include the form of a thin film.

[0052] Additionally, in the drawings of this specification, one side (RF first part; S1) of the RF electrode (130) is depicted as having a sawtooth shape (concave and convex parts) for the purpose of facilitating understanding of the embodiments of the present invention, and is not limited to such a shape.

[0053] FIG. 1 is a drawing for explaining a gas analysis system according to one embodiment of the present invention.

[0054] Referring to FIG. 1, the gas analysis system (1) may include a self-plasma chamber (100), a window (200), an analysis device (300), a first connecting pipe (400), a first control valve (500), a second connecting pipe (600), and a second control valve (700). Additionally, the window (200) may be excluded from the configuration of the gas analysis system (1) depending on the analysis method of the analysis device (300) or the needs of the user.

[0055] A gas analysis system (1) according to one embodiment of the present invention may include equipment capable of monitoring or diagnosing the process status in real time without affecting the process by analyzing the gas generated during the process of manufacturing a semiconductor or display.

[0056] The process chamber (10) may include a chamber for processing deposition, etching, etc., on a substrate. The process chamber (10) may include a chamber for processing semiconductor processes. The process chamber (10) may include a chamber for all processes in which gas is generated during the process.

[0057] The gas to be analyzed flowing from the process chamber (10) into the self plasma chamber (100) is ionized in the self plasma chamber (100) and flows into the analysis device (300), and the analyzed gas to be analyzed can be discharged through the process chamber exhaust line.

[0058] The self-plasma chamber (100) can be connected to a process chamber (10) or a process chamber exhaust line (20). The gas to be analyzed generated during the process in the process chamber (10) can be introduced into the self-plasma chamber (100) through the process chamber (10) or the process chamber exhaust line (20).

[0059] The self-plasma chamber (100) may include a plasma chamber that forms a space for making the internal gas into a plasma state. The self-plasma chamber (100) may generate plasma using an ionization device (120). The gas to be analyzed generated during the process of the process chamber (10) may be ionized by the self-plasma chamber (100).

[0060] The ionization device (120) can be placed inside or outside the main body (110) that forms the outer shape of the self plasma chamber (100).

[0061] The ionization device (120) may include the feature of generating plasma capable of ionizing the gas in the process chamber to ionize the gas to be analyzed.

[0062] The ionization device (120) can be composed of any device capable of generating plasma to ionize a sample, such as CCP (Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma), RPS (Remote Plasma Source), DBD (Dielectric Barrier Discharge), ECR (Electron Cyclotron Resonance), Glow Discharge, Micro Plasma, RF Plasma, etc.

[0063] The ionization device (120) may include an RF electrode (130) and a first ground electrode (140), and may further include a second ground electrode (150). Since the second ground electrode (150) may optionally be included in or excluded from the self-plasma chamber (100), it is represented by a dotted line in the drawing.

[0064] The RF electrode (130) can be coupled with at least one of the first ground electrode (140) and the second ground electrode (150).

[0065] The RF electrode (130) can supply high-frequency power to make the gas in the self-plasma chamber (100) into a plasma state.

[0066] The first ground electrode (140) and the second ground electrode (150) can be connected to ground and coupled with the RF electrode (130) to form an electric or magnetic field that makes the gas inside the self-plasma chamber (100) into a plasma state.

[0067] The self-plasma chamber (100) may have an inlet for the gas to be analyzed to be introduced and an outlet for the gas to be analyzed and the ionized gas to be analyzed to be discharged. The inlet may be formed at the part where the self-plasma chamber (100) and the first connecting pipe (400) are connected. The outlet may be formed at the part where the self-plasma chamber (100) and the second connecting pipe (600) are connected.

[0068] The self-plasma chamber (100) may include a first orifice installed in a path through which the gas to be analyzed flows in. The self-plasma chamber (100) may include a second orifice installed in a path through which the gas to be analyzed and the ionized gas to be analyzed flow out. The first and second outflow orifices may be installed in the self-plasma chamber (100) in multiple numbers.

[0069] The window (200) is formed of a material through which light from the plasma generated in the self-plasma chamber (100) is transmitted, so that the light passes through the window (200) at least partially and is transmitted to the analysis device (300).

[0070] According to embodiments, the window (200) may be connected to or included in the self plasma chamber (100).

[0071] In addition, the window (200) may function as a filter that allows only a specific range of light to pass through, rather than all light.

[0072] Meanwhile, in this specification, assuming that the analysis device (300) is a light spectrum analyzer, the window (200) is included in the gas analysis system (1); it is obvious that if the analysis device (300) is a device that directly introduces and analyzes an ionized sample, the window (200) may be omitted.

[0073] The analysis device (300) can analyze the ionized target gas introduced from the self-plasma chamber (100).

[0074] The analysis device (300) may include all types of mass spectrometers that analyze the mass of a sample or the mass-to-charge ratio (m / z) of ions, such as a quadrupole mass spectrometer (QMS), a time-of-flight mass spectrometer (TOFMS), an ion trap mass spectrometer (ITMS), and a magnetic sector mass spectrometer. The analysis device (300) may include all types of optical spectrum analyzers that analyze the optical spectrum of a sample, such as an optical emission spectrometer (OES). The analysis device (300) may include a residual gas analyzer (RGA). The analysis device (300) may include all types of analysis equipment capable of analyzing the components of all samples, such as gases, liquids, solids, metals, and non-metals.

[0075] The analysis device (300) may include a device for controlling the pressure inside the analysis device (300).

[0076] One end of the first connecting pipe (400) may be installed in the process chamber (10) or the process chamber exhaust line (20), and the other end may be installed in the self plasma chamber (100). The gas to be analyzed generated during the process in the process chamber (10) may be introduced into the self plasma chamber (100) through the first connecting pipe (400).

[0077] A first control valve (500) may be installed in the first connecting pipe (400). A vacuum pump capable of forming the pressure within the processing space to an appropriate process pressure (vacuum, etc.) may be installed in the first connecting pipe (400).

[0078] A filter capable of filtering impurities may be installed in the first connecting pipe (400), and the contamination of the gas analysis system (1) devices can be minimized through the filter.

[0079] A first control valve (500) capable of controlling the flow of the gas to be analyzed may be installed in the first connecting pipe (400). The first control valve (500) can prevent the fluid inside the self-plasma chamber (100) or the gas analysis system (1) from flowing back into the process chamber (10).

[0080] One end of the second connecting pipe (600) can be installed in the analysis device (300), and the other end can be installed in the process chamber exhaust line (20). The second connecting pipe (600) can minimize contamination of the gas analysis system (1) by discharging the gas to be analyzed, the analyzed gas to be analyzed, the ionized gas to be analyzed, or particles inside the analysis device (300) from the analysis device (300) to the process chamber exhaust line (20).

[0081] Additionally, the second connecting pipe (600) may be installed in the self-plasma chamber (100). One end of the second connecting pipe (600) may be installed in the self-plasma chamber (100), and the other end may be installed in the process chamber exhaust line (20). The second connecting pipe (600) can minimize contamination of the gas analysis system (1) by discharging the gas to be analyzed, ionized gas to be analyzed, or internal particles introduced into the self-plasma chamber (100) to the process chamber exhaust line (20).

[0082] A second control valve (700) can be installed in the second connecting pipe (600) to control the discharge of the target gas, analyzed target gas, ionized target gas, or internal particles present in the gas analysis system (1). The second control valve (700) can prevent the fluid inside the gas analysis system (1) from flowing back without being discharged to the process chamber exhaust line (20).

[0083] A vacuum pump capable of forming the pressure within the processing space to an appropriate process pressure (vacuum, etc.) may be installed in the second connecting pipe (600).

[0084] A filter capable of filtering impurities may be installed in the second connecting pipe (600), and the contamination of the gas analysis system (1) devices can be minimized through the filter.

[0085] A second control valve (700) capable of controlling the flow of the gas to be analyzed may be installed in the second connecting pipe (600). The second control valve (700) can prevent the fluid of the self-plasma chamber (100) from flowing back into the process chamber (10).

[0086] The devices of the gas analysis system (1) can securely seal the connection points between devices by using devices such as flanges and O-rings at the connection points of each device.

[0087] FIG. 2 shows a variable electrode structure of a plasma chamber according to one embodiment of the present invention. FIG. 2 is a drawing for explaining the plasma chamber illustrated in FIG. 1.

[0088] FIG. 3 is a cross-sectional view illustrating a variable electrode structure of a plasma chamber according to an embodiment of the present invention shown in FIG. 2. FIG. 3 is a cross-sectional view in the vertical direction (I) of FIG. 2.

[0089] Figure 4 is an enlarged view of area A, as shown in Figure 3.

[0090] Referring to FIGS. 2 through 4, the self-plasma chamber (100) can form a space that creates a plasma state for the internal gas. The self-plasma chamber (100) may include a main body (110) that forms the outer shape of the self-plasma chamber (100), an RF electrode (130) to which a high-frequency power source is applied, and a first ground electrode (140) that is coupled to the RF electrode (130) and connected to ground. The self-plasma chamber (100) may further include a second ground electrode (150). Since the second ground electrode (150) may optionally be included in or excluded from the self-plasma chamber (100), it is represented by a dotted line in the drawings.

[0091] The RF electrode (130) can receive RF power from an RF generator. The RF electrode (130) can generate high-frequency power that makes the gas inside the self-plasma chamber (100) into a plasma state.

[0092] The first ground electrode (140) and the second ground electrode (150) can be connected to ground and coupled with the RF electrode (130) to form an electric or magnetic field that makes the gas inside the self-plasma chamber (100) into a plasma state.

[0093] The first ground electrode (140) can be placed on either the left or right side of the RF electrode (130) when viewed with reference to the cross-sectional view of FIG. 3. The second ground electrode (150) can be placed opposite the first ground electrode (140) and the RF electrode (130) with the first ground electrode (140) and the RF electrode (130) in between. For example, with reference to FIG. 3, if the first ground electrode (140) is placed on the left side of the RF electrode (130), the second ground electrode (150) can be placed on the right side.

[0094] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) can be located outside or inside the main body (110).

[0095] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) can be arranged to surround the main body (110).

[0096] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) is formed integrally and can be arranged to surround the main body (110). (e.g., a through-type cylindrical shape, a through-type polyhedron, etc.)

[0097] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) can be positioned to at least partially surround the outside of the main body (110).

[0098] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) is arranged to surround the outside of the main body (110) and can be formed of at least two parts.

[0099] Additionally, the features in which the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) each surround the outside of the main body (110) may be formed in the same way inside the main body (110). For example, it may include a form in which it is at least partially disposed inside the main body (110) or on an inner wall surface, such as as it surrounds the outside of the main body (110).

[0100] Additionally, the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) may each be inserted into the main body (110) so as not to be exposed and positioned at least partially.

[0101] The RF electrode (130) may include an RF first part (S1) facing the first ground electrode (140) and an RF second part (S2) facing the second ground electrode (150).

[0102] Additionally, the first ground electrode (140) may include a first ground first part (S1') facing the RF first part (S1) of the RF electrode (130) and a first ground second part (S1'') located on the opposite side of the first ground first part (S1').

[0103] Additionally, the second ground electrode (150) may include a second ground first part (S2') facing the RF second part (S2) of the RF electrode (130) and a second ground second part (S2'') located on the opposite side of the second ground first part (S2').

[0104] At this time, an electric field or a magnetic field may be formed between the RF first part (S1) and the first ground first part (S1') of the RF electrode (130), and an electric field or a magnetic field may be formed between the RF second part (S2) and the second ground first part (S2').

[0105] According to one embodiment of the present invention, the distance between the RF electrode (130) and the first ground electrode (140), and / or between the RF electrode (130) and the second ground electrode (150), that is, between two opposing electrode surfaces that form an electric field or a magnetic field, may not be constant.

[0106] In other words, the distance between the surfaces (or parts) of two opposing electrodes can be formed to vary depending on the position. For example, at least one of the surfaces of the two opposing electrodes may have irregularities, such as concave or convex parts. Hereinafter, in this specification, an electrode having such an irregular surface (or part) is referred to as a variable electrode.

[0107] As a result, since the distance between the two opposing electrodes varies within a constant range, an electric flux value having a continuous range of values, rather than a specific value, can be obtained when coupling the two electrodes.

[0108] As a result, it is possible to achieve the effect of improving noise phenomena in which the plasma density or brightness fluctuates significantly and discontinuously as the plasma pressure changes during ionization in the plasma chamber.

[0109] According to one embodiment, at least one of the RF first part (S1), RF second part (S2), first ground first part (S1'), and second ground first part (S2') may have a concave or convex portion, and at least one of the portions (S1, S2, S1' and S2') may have a shape that is wavy or irregular. In the drawing, only the RF first part (S1) of the RF electrode (130) is shown with the above shape, but this is merely an example to explain the shape and is not limited to the RF electrode (130).

[0110] In addition, at least one of the RF first part (S1), RF second part (S2), first ground first part (S1') and second ground first part (S2') may have a shape that is curved or inclined.

[0111] Each of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) can be placed inside or outside the main body (110). If the RF electrode (130) is placed outside, contamination of the RF electrode (130) by plasma or a sample can be prevented.

[0112] The size or shape of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) can be freely modified.

[0113] The positions of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) in the drawing are merely examples for illustrative purposes and are not limited to the positions in the drawing.

[0114] FIG. 5 shows a case where the distance between the RF electrode and the ground electrode is constant, and FIG. 6 shows a case where the distance between the RF electrode and the ground electrode is not constant, as in the embodiments of the present invention.

[0115] FIG. 6 is a diagram illustrating the electrode structure of a plasma chamber with a variable electrode applied, in which the distance between the RF electrode and the ground electrode of the plasma chamber shown in FIG. 2 to 4 is not constant.

[0116] Figures 5 and 6 are unfolded drawings in the form of a planar view to represent the ground electrode coupled to the RF electrode.

[0117] For convenience of explanation, drawings of each electrode viewed from above are shown in FIGS. 5 and 6.

[0118] Referring to FIG. 5, if the distance between the RF electrode and the ground electrode of the plasma chamber is constant, a constant electric flux value (indicated by the arrow in the figure) (e.g., 1) is obtained during electrode coupling. It can have a uniform electric field between the electrodes. As a result, a noise phenomenon may occur in which the characteristics of the plasma (e.g., density or brightness) fluctuate significantly and discontinuously as the pressure of the plasma changes.

[0119] Referring to FIG. 6, when the distance between the RF electrode and the ground electrode according to one embodiment of the present invention is not constant, the electric flux value (indicated by an arrow in the drawing) having a continuous range of values ​​rather than a specific value (e.g., 0.5~1.5) ) can be obtained. Accordingly, a variable electric field whose value changes depending on the position between the electrodes can be formed. Through this, noise phenomena in which plasma characteristics (e.g., density or brightness) fluctuate discontinuously as the plasma pressure changes during ionization in the plasma chamber can be improved.

[0120] Meanwhile, although FIG. 6 describes that the distance between the RF electrode (130) and the first ground electrode (140) is variable, as previously explained, the above description can be applied in the same way even when the distance between the RF electrode (130) and the second ground electrode (150) is variable.

[0121] FIG. 7 is a diagram illustrating a method for implementing variable electrodes according to embodiments of the present invention.

[0122] Referring to FIG. 7, the shapes of the RF electrode (130), the first ground electrode (140), and the second ground electrode (150) may have various shapes such that the distance between the electrodes facing each other is not constant. For example, the cross-sections of the electrodes (130, 140, 150) may be formed in the shape exemplified in FIG. 7.

[0123] For example, referring to FIG. 7(a), the RF first portion (S1) of the RF electrode (130) may include the feature of being formed as a straight waveform.

[0124] For example, referring to Fig. 7(b), the RF first portion (S1) of the RF electrode (130) may include a feature formed as a curved waveform.

[0125] For example, referring to (c) of FIG. 7, the RF first portion (S1) of the RF electrode (130) may include a feature in which a hollow portion and a protruding portion are formed alternately.

[0126] For example, referring to (d) and (e) of FIG. 7, the RF first portion (S1) of the RF electrode (130) may include a feature formed in the shape of an inclined surface.

[0127] For example, referring to (f) of FIG. 7, the RF first portion (S1) of the RF electrode (130) may include a feature of being formed in a convex shape toward the RF second portion (S2).

[0128] For example, referring to (g) of FIG. 7, the RF first portion (S1) of the RF electrode (130) may include a feature of being formed in a concave shape toward the RF second portion (S2).

[0129] As such, the RF first part (S1)' may include a regular or irregular surface shape that makes the distance from the other electrode part facing it inconsistent.

[0130] Meanwhile, for the sake of example, in FIG. 7, only the RF first part (S1) of the RF electrode (130) is depicted as a concave or convex part, but at least one of the RF second part (S2) of the RF electrode (130), the first ground first part (S1') of the first ground electrode (140), and the second ground first part (S2') of the second ground electrode (150) may include the shape of FIG. 7 (a) to (g).

[0131] Additionally, the shapes of the parts of each electrode (S1, S1', S1'', S2, S2', and S2'') may be formed in a three-dimensional shape rather than a planar shape. For example, a variable electrode structure may be included in which the RF first part (S1) on the cross-sectional view of FIG. 3 shows the shapes of (a) to (g), and a variable electrode structure may be included in which the RF first part (S1) on the planar view of FIG. 6 shows the shapes of (a) to (g).

[0132] That is, various three-dimensional shapes may be included to form the distance between each electrode (130, 140 and 150) in an anomalous way.

[0133] Figure 8 is a graph showing the change in plasma brightness of a plasma chamber when the distance between the RF electrode and the ground electrode of the plasma chamber, as illustrated in Figure 6, is constant.

[0134] FIG. 9 is a graph showing the change in plasma brightness of a plasma chamber with a variable electrode applied, in which the distance between the RF electrode and the ground electrode of the plasma chamber is not constant, as shown in FIG. 2 to 4, 6 and 7.

[0135] Figures 8 and 9 are graphs showing the change in plasma intensity (brightness / density) in a plasma chamber according to constant / variable distance between the RF electrode and the ground electrode.

[0136] Figures 8 and 9 are graphs showing the change in plasma intensity (brightness / density) with respect to pressure reduction, expressed in terms of pressure and brightness. To verify the characteristics of the plasma according to pressure during ionization in a plasma chamber, the pressure was reduced over time and the brightness of the plasma was measured.

[0137] In addition, the brightness and pressure values ​​plotted on the x-axis and y-axis of the graph were set to arbitrary values ​​to represent changes in plasma brightness in the graph, and are not limited to these values.

[0138] Meanwhile, in semiconductor processes and / or substrate processing such as deposition and etching, changes in pressure during the process are an inevitable phenomenon.

[0139] Referring to Fig. 8, in a plasma chamber without a variable electrode, when the pressure changes during plasma generation, there may be a section where the light brightness (density) of the plasma changes discontinuously, that is, a section where the brightness rapidly increases (rising) and a section where it weakens (falling).

[0140] On the other hand, referring to FIG. 9, the plasma of a plasma chamber with a variable electrode applied, in which the distance between the RF electrode and the ground electrode is not constant according to one embodiment of the present invention with a variable electrode applied, may not exhibit a section where the light brightness (density) of the plasma changes discontinuously (a section where the brightness rapidly increases or decreases) even though the pressure changes during plasma generation.

[0141] Figure 9 is a diagram showing the plasma light brightness (density) when the pressure decreases during plasma generation, and the pressure may decrease or increase during plasma generation.

[0142] As shown in Fig. 8, when the distance between the RF electrode and the ground electrode is constant, it can be assumed that the energy supplied for plasma generation (or discharge) is fixed or uniform. In other words, the ionization energy applied to multiple molecules is fixed, and accordingly, whether multiple molecules are ionized is determined. Accordingly, the number of target gas particles ionized by plasma can vary all at once depending on the environment inside the plasma chamber.

[0143] On the other hand, as shown in Fig. 9, when the distance between the RF electrode and the ground electrode is variable, the energy supplied for plasma generation (or discharge) can be considered to be distributed within a certain range, and accordingly, the ionization of multiple molecules can be determined individually. Accordingly, the number of target gas particles ionized by plasma may not change all at once depending on the environment inside the plasma chamber.

[0144] The foregoing description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not limit, the technical concept of the present invention, and the scope of the technical concept of the present invention is not limited by these embodiments. The scope of protection of the present invention shall be interpreted by the claims below, and all technical concepts within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention.

[0145] Although various embodiments have been described above, it should be understood that various modifications are possible. For example, suitable results may be achieved even if the described techniques are performed in a different order, and / or the elements of the described system, structure, device, circuit, etc. are combined in a different way, or are replaced or supplemented by other elements or equivalents. Accordingly, other embodiments fall within the scope of the claims set forth below.

Claims

1. A self-plasma chamber connected to a process chamber and forming a space that creates a plasma state of an internal gas, A main body constituting the outer shape of the self plasma chamber above; An RF electrode disposed inside or outside the main body to which a high-frequency power source is applied; and It includes a first ground electrode spaced apart from the RF electrode and disposed inside or outside the main body, connected to ground, and The above RF electrode is, At least one of a convex portion and a concave portion is formed in the portion of the RF electrode facing the first ground electrode. Self-plasma chamber.

2. In Paragraph 1, The first ground electrode has at least one of a convex portion and a concave portion formed in the portion of the first ground electrode facing the RF electrode. Self-plasma chamber.

3. In Paragraph 1, The above-mentioned self-plasma chamber is, It includes a second ground electrode spaced apart from the RF electrode and disposed inside or outside the main body, connected to ground, and The second ground electrode above is, The first ground electrode and the RF electrode are positioned opposite each other with the first ground electrode and the RF electrode in between, Self-plasma chamber.

4. In Paragraph 3, The above RF electrode is, At least one of a convex portion and a concave portion is formed in the portion of the RF electrode facing the second ground electrode. Self-plasma chamber.

5. In Paragraph 3, The second ground electrode has at least one of a convex portion and a concave portion formed in the portion of the second ground electrode facing the RF electrode. Self-plasma chamber.

6. In Paragraph 1, The above-mentioned self-plasma chamber is, A window connected to the self-plasma chamber and through which light of the plasma generated in the self-plasma chamber is transmitted, Self-plasma chamber 7. A gas analysis system comprising a self-plasma chamber connected to a process chamber and forming a space for making internal gas into a plasma state, and a gas analysis device connected to said self-plasma chamber, wherein The above-mentioned self-plasma chamber is, A main body constituting the outer shape of the self plasma chamber above; An RF electrode disposed inside or outside the main body to which a high-frequency power source is applied; and It includes a first ground electrode spaced apart from the RF electrode and disposed inside or outside the main body, connected to ground, and The above RF electrode is, At least one of a convex portion and a concave portion is formed in the portion of the RF electrode facing the first ground electrode, and The above gas analysis device is, An analysis unit for analyzing the gas of the process chamber that reacted with the plasma generated in the self-plasma chamber; and A control unit for controlling the above gas analysis device, comprising Gas analysis system.

8. In Paragraph 7, The first ground electrode has at least one of a convex portion and a concave portion formed in the portion of the first ground electrode facing the RF electrode. Gas analysis system.

9. In Paragraph 7, The above-mentioned self-plasma chamber is, It includes a second ground electrode spaced apart from the RF electrode and disposed inside or outside the main body, connected to ground, and The second ground electrode above is, The first ground electrode and the RF electrode are positioned opposite each other with the first ground electrode and the RF electrode in between, Gas analysis system.

10. In Paragraph 9, The above RF electrode is, At least one of a convex portion and a concave portion is formed in the portion of the RF electrode facing the second ground electrode. Gas analysis system.

11. In Paragraph 9, The second ground electrode has at least one of a convex portion and a concave portion formed in the portion of the second ground electrode facing the RF electrode. Gas analysis system.

12. In Paragraph 7, The above gas analysis device is, A photoemission spectrometer for analyzing the light of plasma generated in the self-plasma chamber; and at least one mass spectrometer for analyzing a sample introduced into the self-plasma chamber, Gas analysis system.

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