Solar cell and preparation method therefor, electric apparatus, and power generation apparatus

Abstract

The present application provides a solar cell and a preparation method therefor, an electric apparatus, and a power generation apparatus. The solar cell comprises a first electrode, a functional layer, and a second electrode that are sequentially stacked, and a P3 groove formed through the second electrode and the functional layer, wherein the surface of the side of the second electrode away from the functional layer, and the surfaces of the inner wall and the bottom end of the P3 groove are covered with an insulating layer, and the resistance value of the insulating layer ranges from 2,000 Ω to 108 Ω. The insulating layer can reduce the short circuit caused by the contact between burrs formed by laser scribing of the second electrode and the first electrode, thereby improving the photoelectric conversion efficiency of the solar cell.

Description

Solar cell, method for manufacturing the same, power consuming device, and power generating device

[0001] Cross-reference to related applications

[0002] This application refers to the Chinese patent application No. 2024113277637, filed on September 23, 2024, entitled "Solar cell, method for manufacturing the same, power consuming device, and power generating device", which is incorporated by reference in its entirety. TECHNICAL FIELD

[0003] The present application relates to the technical field of solar cell devices, in particular to a solar cell, a method for manufacturing the same, a power consuming device, and a power generating device. BACKGROUND

[0004] With large-scale development and utilization of non-renewable energy such as coal and oil, its storage has been unable to meet the demand of the development of various industries such as agriculture and industry, therefore, renewable energy gradually becomes one of the alternative energy sources of non-renewable energy to promote the development of society and industry. Among them, solar cell devices are widely used due to their green environmental protection, output of electricity when receiving sunlight, and other characteristics.

[0005] Generally, in the preparation process of a solar cell module, a metal electrode is laser engraved to form a required P3 groove, the purpose of which is to form individual modules in the solar cell module to realize the construction of a circuit structure and the series connection of solar cells. However, after actual engraving operation, a "crater-like" burr phenomenon easily occurs on both sides of the scribe line, and the burr enters the P3 groove and is connected with a transparent conductive glass electrode during lamination and packaging, resulting in short circuit of the module and reducing the photoelectric conversion efficiency of the battery module. Therefore, it is urgent to solve the short circuit caused by the burr formed by laser engraving of the metal electrode. SUMMARY

[0006] The present application is made in view of the above-mentioned problems, and aims to provide a solar cell module and a method for manufacturing the same, which reduces the short circuit phenomenon caused by the contact of a burr formed by laser engraving of a second electrode with a first electrode, and improves the photoelectric conversion efficiency of a solar cell.

[0007] A first aspect of the present application provides a solar cell, comprising a first electrode, a functional layer, and a second electrode which are sequentially stacked, and a P3 groove formed through the second electrode and the functional layer, wherein a surface of the second electrode away from the functional layer, an inner wall of the P3 groove, and a bottom end surface of the P3 groove are covered with an insulating layer, and the resistance value of the insulating layer is 2000 Ω-10 8 Ω.

[0008] Covering the surface of the second electrode far away from the functional layer and the inner wall and bottom end surface of the P3 groove with an insulating layer helps to reduce short-circuit points in the solar cell, reduce electron loss, and improve photoelectric conversion efficiency.

[0009] In any embodiment, the P3 groove exposes the first electrode at the bottom end.

[0010] In any embodiment, the resistance of the insulating layer is 10 5 Ω-10 8 Ω. In any embodiment, the resistance of the insulating layer is 2000 Ω-5000 Ω. A suitable resistance of the insulating layer helps to improve the insulation performance of the insulating layer, reduce electron loss, and improve the open-circuit voltage and photoelectric conversion efficiency of the solar cell.

[0011] In any embodiment, the thickness of the insulating layer is 5 nm-100 nm. In any embodiment, the thickness of the insulating layer is 15 nm-50 nm. Adjusting the thickness of the insulating layer helps to improve the insulation performance of the insulating layer, block or reduce short circuits formed by the contact between the second electrode and the first electrode; at the same time, it improves the mechanical stress and heat dissipation performance of the insulating layer, and improves the preparability of the solar cell.

[0012] In any embodiment, the insulating layer comprises one or more of metal oxides, metal hydroxides, metal nitrides, and non-metal nitrides, wherein the metal oxides comprise one or more of nickel oxide, tin oxide, aluminum oxide, and indium oxide doped tungsten oxide; the metal hydroxides comprise one or more of magnesium hydroxide, aluminum hydroxide, and calcium hydroxide; the metal nitrides comprise one or more of aluminum nitride and magnesium nitride; and the non-metal nitrides comprise one or more of silicon nitride and boron nitride.

[0013] The insulating material of the insulating layer has a high resistance and is widely available, which helps to improve the insulation effect of the insulating layer and control the preparation cost of the battery.

[0014] In any embodiment, the metal oxide comprises nickel oxide, and the nickel oxide comprises Ni 3+ and Ni 2+ , the molar ratio of Ni 3+ to Ni 2+ is (0.1-0.4):1, based on the molar amount of Ni atoms in the metal oxide. In any embodiment, the molar ratio of Ni 3+ to Ni 2+ is (0.2-0.3):1, based on the molar amount of Ni atoms in the metal oxide.

[0015] The resistance of Ni 3+ is lower than that of Ni 2+resistance value of Sn 3+ with Sn 2+ , or the molar content of Sn 3+ in the metal oxide is within a suitable range, which helps to adjust and improve the resistance performance of the insulating layer, and is conducive to blocking the short-circuit point and improving the photoelectric conversion efficiency of the solar cell.

[0016] In any embodiment, the metal oxide comprises tin oxide, and the tin oxide comprises Sn 4+ and Sn 2+ , the molar ratio of Sn 4+ to Sn 2+ in the metal oxide is (5-100):1, based on the molar amount of Sn atoms in the metal oxide. In any embodiment, the molar ratio of Sn 4+ to Sn 2+ in the metal oxide is (5-50):1, based on the molar amount of Sn atoms in the metal oxide.

[0017] Sn 4+ element has a resistance value lower than that of Sn 2+ , the content of Sn 4+ in the metal oxide is controlled, and the molar ratio of Sn 2+ to Sn 4+ or the molar content of Sn + in the metal oxide is within a suitable range, which helps to adjust and improve the resistance performance of the insulating layer, and is conducive to blocking the short-circuit point and improving the photoelectric conversion efficiency of the solar cell.

[0018] In any embodiment, the functional layer comprises a light-absorbing layer, and the light-absorbing layer comprises a perovskite compound, and the perovskite compound comprises ABX3, A is a monovalent cation, comprising one or more of methylamine group, formamidine group, Li + , Na + , K + , Cs + , Rb + ; B is a divalent cation, comprising one or more of Pb 2+ , Sn 2+ , W 2+ , Se 2+ , Rh 2+ , Ge 2+ , As 2+ , In 2+ , Sb 2+ ; X is a monovalent anion, comprising one or more of I - , Br - , Cl - .

[0019] In any embodiment, the perovskite compound comprises ABX3, A comprises one or more of methylamine group, formamidine group, Cs + , Rb + , B comprises one or more of Pb 2+ , Sn 2+ , X comprises one or more of I - , Br - , Cl - .

[0020] The perovskite compound is easy to obtain, the production process is mature, and has good energy conversion efficiency.

[0021] The second aspect of the present application provides a preparation method of a solar cell, the preparation method comprising:

[0022] providing a first electrode, performing P1 scribing;

[0023] forming a functional layer on at least one side of the first electrode, performing P2 scribing;

[0024] forming a second electrode on the side of the functional layer away from the first electrode, cutting the functional layer and the second electrode to form a P3 groove;

[0025] depositing an insulating layer on the surface of the side of the second electrode away from the functional layer, and the inner wall and bottom end surface of the P3 groove, to obtain the solar cell.

[0026] The preparation method of the solar cell described above has a wide range of application, can be applied to the preparation of formal and reverse solar cells, and can be performed at a relatively low temperature (below 200°C), which can reduce energy consumption and degradation of perovskite materials and other temperature-sensitive materials in the battery, and improve the stability and photoelectric conversion efficiency of the solar cell.

[0027] In any embodiment, the deposition process comprises at least one of evaporation, sputtering, spraying, and blade coating.

[0028] In any embodiment, in the deposition step, the temperature of the deposition process is not more than 200°C.

[0029] In any embodiment, in the deposition step, in the gas atmosphere of the deposition process, the volume ratio of oxygen in the gas atmosphere is 0.1%-10%.

[0030] In any embodiment, in the deposition step, the power of the deposition device to the target material is 2.6KW-4KW.

[0031] The perovskite compound in the functional layer has poor thermal stability at high temperature (greater than 200℃), is easily decomposed by heat, and reduces the stability and photoelectric conversion efficiency of the solar cell. The above deposition conditions are beneficial to reducing the degradation of the perovskite material and improving the photoelectric conversion performance and stability of the solar cell.

[0032] Oxygen in the deposition gas atmosphere helps the target material (deposition raw material) to form an oxide film, i.e., an insulating layer, but oxygen can form ozone with high oxidation and activity under bombardment energy, causing the target material to be oxidized to a higher-valence oxide, affecting the insulating performance of the insulating layer. Increasing the power (bombardment energy) of the target material in the deposition equipment is beneficial to improving the production speed and improving the production efficiency. Adjusting the volume fraction of oxygen in the gas atmosphere and the bombardment energy helps to control the content of high-valence metal oxides and improve the insulating performance of the insulating layer, while taking into account good production efficiency.

[0033] In any embodiment, the target material comprises one or more of a metal oxide, a metal hydroxide, a metal nitride, and a non-metal nitride, wherein the metal oxide comprises one or more of nickel oxide, tin oxide, aluminum oxide, and indium oxide doped tungsten oxide; the metal hydroxide comprises one or more of magnesium hydroxide, aluminum hydroxide, and calcium hydroxide; the metal nitride comprises one or more of aluminum nitride and magnesium nitride; and the non-metal nitride comprises one or more of silicon nitride and boron nitride.

[0034] The target material has a high resistance and a relatively low melting point, which is beneficial to preparing an insulating layer with excellent insulating performance at low energy consumption.

[0035] The third aspect of the present application provides a power-using device comprising the solar cell of the first aspect and the solar cell prepared by the preparation method of the second aspect.

[0036] The fourth aspect of the present application provides a power-generating device comprising the solar cell of the first aspect and the solar cell prepared by the preparation method of the second aspect. BRIEF DESCRIPTION OF DRAWINGS

[0037] FIG. 1 is a schematic diagram of the cross-sectional structure of a solar cell according to an embodiment of the present application;

[0038] FIG. 2 is an electroluminescence (EL) diagram of a solar cell according to Example 1 of the present application;

[0039] FIG. 3 is an electroluminescence (EL) diagram of a solar cell according to Example 11 of the present application;

[0040] FIG. 4 is an electroluminescence (EL) diagram of a solar cell according to Comparative Example 1 of the present application.

[0041] Reference signs: 1 - solar cell; 10 - first electrode; 11 - functional layer; 12 - second electrode; 14 - P3 groove; 13 - insulating layer. DETAILED DESCRIPTION

[0042] The embodiments of the technical solutions of the present application will be described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0043] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "include" and "have" and any variations thereof in the specification and claims of the present application and the above description of drawings are intended to cover non-exclusive inclusion.

[0044] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise explicitly and specifically limited.

[0045] In this paper, the phrase "embodiment" means that the specific features, structures or properties described in conjunction with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily mean the same embodiment, nor is it an independent or alternative embodiment that is not mutually exclusive with other embodiments. The skilled person in the art explicitly and implicitly understands that the embodiments described herein can be combined with other embodiments.

[0046] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship between the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents a "or" relationship between the associated objects before and after.

[0047] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two), and similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0048] In the description of the embodiments of the present application, the orientations or positional relationships indicated by the technical terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0049] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mounting", "connecting", "connecting", "fixing" and the like should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0050] Perovskite solar cells have attracted extensive attention due to their high light absorption coefficient, long carrier lifetime, and low-cost low-temperature liquid-phase preparation method, and other excellent optoelectronic properties. Currently, perovskite solar cell modules for industrial application often use laser scribing to connect the sub-cells in series. The laser scribing step usually includes three times (usually referred to as P1, P2, P3). P1 is to pattern the first electrode (such as transparent conductive glass) and divide it into multiple sub-cells. P2 is to pattern the prepared first carrier transport layer / perovskite layer / second carrier transport layer structure together, exposing the bottom transparent electrode. P3 is to pattern the electrode after the second electrode (such as a metal electrode) is prepared. Finally, a perovskite solar module is formed by connecting multiple separated sub-cells in series.

[0051] In the perovskite solar cell module structure, the top is the second electrode, and below the second electrode contains organic, inorganic or polymer functional layer material, the laser light absorption coefficient of the second electrode and the functional layer material is different, after the same laser irradiation, the ablation degree of different materials is different. Because the melting point of the second electrode is higher than that of the functional layer containing organic, inorganic or polymer material, the ablation degree of the second electrode is low, and the ablated components of the functional layer break through the second electrode in the form of gas, causing the second electrode in the P3 cutting area to be upturned, forming a crater-like area. In the subsequent module packaging process, the upturned second electrode at the P3 cutting area is in direct contact with the lower first electrode under pressure to form a short circuit point, which not only causes direct circuit connection between the electrodes, making the battery unable to establish an effective voltage difference, but also causes the recombination of carriers at the short circuit point, resulting in a significant decrease in open-circuit voltage (Voc, which is the voltage of a solar cell when no current flows through it). At the same time, the short circuit point increases the series resistance of the battery and reduces the fill factor (FF), resulting in a decrease in the photoelectric conversion efficiency of the solar cell module.

[0052] [Perovskite solar cell]

[0053] Based on this, as shown in FIG. 1, the first aspect of the present application provides a solar cell 1, comprising: a first electrode 10, a functional layer 11, a second electrode 12, and a P3 groove 14 formed through the functional layer 11 and the second electrode 12, which are sequentially stacked, wherein the surface of the second electrode away from the functional layer side and the inner wall and bottom end surface of the P3 groove are covered with an insulating layer 13, and the resistance value of the insulating layer is 2000Ω-10 8 Ω.

[0054] The bottom end of the P3 groove exposes the first electrode. It can be understood that the bottom end of the P3 groove is the first electrode.

[0055] The "first electrode" is an output terminal of the perovskite solar cell, which is an electrode with high conductivity and high visible light transmittance.

[0056] The "functional layer" includes a charge transport layer and a light absorption layer, and the charge transport layer further includes an electron transport layer and a hole transport layer, which are respectively arranged on both sides of the light absorption layer. Among them, the charge transport layer is used to collect the electrons or holes generated by the light absorption layer under light conditions. The hole transport layer, as an important part of the perovskite solar cell, mainly functions to collect and transport holes, achieve effective separation of electrons and holes, and protect the perovskite layer from oxygen and water vapor erosion, which has an important influence on the efficiency and stability of the battery. The electron transport layer plays an important role in transporting electrons and blocking electron-hole recombination.

[0057] The "second electrode" refers to an electrode made of metal, also known as a metal electrode. As another output terminal of the perovskite solar cell, it generally has high conductivity and stability.

[0058] Metal oxides have a wide band gap, meaning that the excitation of electrons from the valence band to the conduction band requires a large amount of energy, so the carrier concentration of metal oxides is very low at room temperature (10-30°C) and lower temperatures (200°C), with a high resistance value. Covering the inner wall and bottom surface of the P3 groove and the surface of the second electrode away from the functional layer on the solar cell can form an insulating layer, which can block the short circuit point formed by the direct contact of the second electrode and the underlying first electrode at the P3 cutting area during the encapsulation process of the module. On the one hand, when sunlight shines on the battery module to produce electron-hole pairs, these carriers do not recombine at the short circuit point but are effectively extracted and converted, increasing the open-circuit voltage. On the other hand, it makes electrons flow along the intended path, i.e. electrons pass through the perovskite layer and the electron transport layer for transmission, reducing the series resistance, improving the fill factor, and improving the photoelectric conversion efficiency of the battery.

[0059] In some embodiments, the resistance value of the insulating layer is 10 5 Ω-10 8 Ω. In some embodiments, the resistance value of the insulating layer is 2000Ω-5000Ω.

[0060] In this context, the term "resistance of the insulating layer" refers to the channel resistance of the P3 groove when the insulating layer is covered on the inner wall and bottom surface of the P3 groove and the surface of the second electrode away from the functional layer.

[0061] The resistance value of the insulating layer can be characterized by any means in the art. As an example, the probes of a multimeter (resistance meter) are clamped on both sides of the P3 groove, the current passes through the anode probe, passes through the battery film layer, and returns to the cathode probe, and the channel resistance value of the P3 groove is obtained, i.e. the resistance value of the insulating layer.

[0062] In some embodiments, the resistance value of the insulating layer is 2000Ω, 6000Ω, 10000Ω, 12000Ω, 16000Ω, 20000Ω, 24000Ω, 28000Ω, 32000Ω, 36000Ω, 40000Ω, 44000Ω, 48000Ω, 50000Ω, 10 5 Ω, 5x10 5 Ω, 10 6 Ω, 5x10 6 Ω, 10 7 Ω, 5x10 7 Ω, 10 8Ω or any value within the range or any value within the range consisting of the above.

[0063] The resistance of the insulating layer is within a suitable range, which can block the short circuit point formed by the direct contact between the metal electrode at the P3 cutting area and the underlying first electrode during the assembly packaging process, thereby improving the open circuit voltage and fill factor of the battery assembly, and thus improving the photoelectric conversion efficiency of the solar cell.

[0064] In some embodiments, the thickness of the insulating layer is 5-100 nm. In some embodiments, the thickness of the insulating layer is 15-50 nm.

[0065] The thickness of the insulating layer can be characterized by any method in the art. As an example, the thickness of the insulating layer is measured by a step meter. Specifically, a 10 cm x 10 cm battery sample containing a P3 scribe line is prepared, the sample is placed on the step meter stage, a line scan is selected, the probe scans the area containing the scribe line, and the channel depth data A1 is obtained according to the probe fluctuation. After covering the insulating layer, the above measurement steps are repeated to obtain the channel depth data A2 of the insulating layer. The thickness of the insulating layer is obtained by subtracting A2-A1 from the two data.

[0066] In some embodiments, the thickness of the insulating layer is 15-60 nm, 20-50 nm, 25-50 nm, 30-60 nm, 35-60 nm, 40-70 nm, 45-80 nm.

[0067] In some embodiments, the thickness of the insulating layer is 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 65 cm, 70 cm, 75 cm, 80 cm, 85 cm, 90 cm, 95 cm, 100 cm or any value within the range consisting of the above or any value within the range.

[0068] A too thick insulating layer will increase the resistance between the second electrode and the first electrode, which will result in an increased series resistance of the cell, and a reduced fill factor and photoelectric conversion efficiency of the cell. In addition, a too thick insulating layer will also generate extra mechanical stress on the cell, especially when the temperature changes, different material thermal expansion coefficients can cause the cell to bend or break. Furthermore, a too thick insulating layer can affect the heat dissipation performance of the cell, resulting in an increased temperature of the cell during operation, affecting the long-term stability of the cell. A too thin insulating layer will result in insufficient insulation, causing the second electrode to contact the first electrode under pressure in the P3 scribing process, forming a short circuit, affecting the photoelectric conversion efficiency of the cell. An insulating layer with a suitable thickness can block the short circuit formed by the contact between the second electrode and the first electrode, improve the photoelectric conversion efficiency of the cell, and also help to improve the mechanical stress and heat dissipation performance of the insulating layer, improving the manufacturability of the solar cell.

[0069] The insulating layer comprises one or more of a metal oxide, a metal hydroxide, a metal nitride, and a non-metal nitride.

[0070] In some embodiments, the metal oxide comprises one or more of nickel oxide (e.g., NiO), tin oxide (e.g., SnO), aluminum oxide (e.g., Al2O3), and indium oxide-doped tungsten oxide (IWO). The metal oxide has a high resistance value, which is conducive to improving the insulation effect of the insulating layer and reducing the deposition amount of the metal oxide, and reducing the thickness of the insulating layer.

[0071] In the insulating layer, the valence states of the metal atoms in the metal oxide can be the same or different.

[0072] In some embodiments, the metal oxide comprises nickel oxide, and the nickel oxide comprises Ni 3+ and Ni 2+ .

[0073] In some embodiments, the molar ratio of Ni 3+ to Ni 2+ is (0.1-0.4):1, based on the molar amount of Ni atoms in the metal oxide. In some embodiments, the molar ratio of Ni 3+ to Ni 2+ is (0.20-0.35):1, (0.25-0.35):1, (0.30-0.35):1, (0.15-0.30):1, or (0.2-0.3):1, based on the molar amount of Ni atoms in the metal oxide.

[0074] In some embodiments, the molar ratio of Ni 3+ to Ni 2+0.1:1, 0.15:1, 0.20:1, 0.25:1, 0.30:1, 0.35:1, 0.4:1 or any value within a range defined by any two of the above.

[0075] In some embodiments, the metal oxide comprises tin oxide, and the tin oxide comprises Sn 4+ and Sn 2+ .

[0076] In some embodiments, the molar ratio of Sn 4+ to Sn 2+ is (5-100):1, based on the molar amount of Sn atoms in the metal oxide. In some embodiments, the molar ratio of Sn 4+ to Sn 2+ is (5-50):1, (5-35):1, (10-35):1 or (9-32):1, based on the molar amount of Sn atoms in the metal oxide.

[0077] In some embodiments, the molar ratio of Sn 4+ to Sn 2+ is 5:1, 9:1, 10:1, 15:1, 20:1, 25:1, 30:1, 35:1, 40:1, 45:1, 50:1, 55:1, 60:1, 65:1, 70:1, 75:1, 80:1, 90:1, 100:1 or any value within a range defined by any two of the above, based on the molar amount of Sn atoms in the metal oxide.

[0078] The content of different valence elements in the metal oxide can be characterized by any method in the art, for example, by X-ray photoelectron spectroscopy.

[0079] Based on the rule of electron arrangement outside the nucleus, Ni 3+ or Sn 2+ has an unstable outermost electron arrangement and can accommodate and carry additional electrons to improve atomic stability, while Ni 2+ and Sn 4+ have a more stable electron arrangement outside the nucleus and have a weaker ability to carry additional electrons. Thus, the resistance value of the trivalent nickel oxide is lower than that of the divalent nickel oxide, and by analogy, the resistance value of the divalent tin oxide is lower than that of the tetravalent tin oxide. Ni 3+ or Sn 2+ has a high proportion in the metal oxide, which provides more free electrons, increases the carrier concentration and reduces the resistance of the material, which is not conducive to the blocking of short-circuit points and affects the photoelectric conversion efficiency of the solar cell. Ni 3+ and Ni 2+molar ratio of Sn 4+ molar ratio of Sn 2+ The molar ratio of Sn 3+ in a suitable range helps to improve the resistance value of the insulation layer, effectively block the short circuit point while reducing the amount of metal oxide, improve the photoelectric conversion efficiency of the solar cell and improve the heat dissipation performance of the solar cell.

[0080] In some embodiments, the metal hydroxide in the insulation layer includes one or more of magnesium hydroxide, aluminum hydroxide, and calcium hydroxide.

[0081] In some embodiments, the metal nitride in the insulation layer includes one or more of aluminum nitride and magnesium nitride.

[0082] In some embodiments, the non-metallic nitride in the insulation layer includes one or more of silicon nitride and boron nitride.

[0083] The high resistance of the insulation material helps to improve the insulation effect of the insulation layer and reduce the deposition amount of the metal oxide, and reduce the thickness of the insulation layer.

[0084] In some embodiments, the light-absorbing layer in the functional layer includes a perovskite compound, and the perovskite compound includes ABX3, A is one or more of monovalent cations including methylamine group (CH3NH 3+ ), formamidine group (HC(NH2) 2+ ), Li + , Na + , K + , Cs + , Rb + ; B is one or more of divalent cations including Pb 2+ , Sn 2+ , W 2+ , Se 2+ , Rh 2+ , Ge 2+ , As 2+ , In 2+ , Sb 2+ ; X is one or more of monovalent anions including I - , Br - , Cl - .

[0085] In some embodiments, the perovskite compound includes ABX3, A includes one or more of methylamine group (CH3NH 3+ ), formamidine group (HC(NH2) 2+ ), Cs + , Rb + , and B includes Pb 2+ , Sn2+ One or more cations in, X including I - ,Br - Cl - One or more of them.

[0086] The perovskite compound is readily available, has a mature production process, is suitable for low-temperature processing, and has good energy conversion efficiency.

[0087] The perovskite compound in the light-absorbing layer has a good band gap, which represents the energy gap between bound and free states or between the valence band and the conduction band. In some embodiments, the band gap of the perovskite compound is 1.20 eV-2.30 eV.

[0088] In some embodiments, the band gap of the perovskite compound may be selected as 1.20 eV, 1.30 eV, 1.40 eV, 1.50 eV, 1.60 eV, 1.70 eV, 1.80 eV, 1.90 eV, 2.00 eV, 2.10 eV, 2.20 eV, 2.30 eV, or any value within a range of any two of the stated values.

[0089] The perovskite layer has a band gap within the aforementioned range, which allows it to absorb and convert more photons within the spectral range, thus improving the photoelectric conversion efficiency of the battery.

[0090] In some embodiments, the thickness of the light-absorbing layer is 400nm-1000nm. In some embodiments, the thickness of the light-absorbing layer is 500nm-1000nm, 600nm-1000nm, 700nm-1000nm, 800nm-1000nm, or 900nm-1000nm.

[0091] In some embodiments, the thickness of the light-absorbing layer is 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, 800nm, 850nm, 900nm, 950nm, 1000nm, or any value within a range of any two of the stated values.

[0092] In some embodiments, the electron transport layer in the functional layer includes methyl [6,6]-phenyl C61 butyrate (PC61BM), methyl [6,6]-phenyl C71 butyrate (PC71BM), fullerenes and their derivatives, C 60 C 70 At least one of tin dioxide (SnO2), zinc oxide (ZnO) and their derivatives or doped and passivated materials.

[0093] In some embodiments, the thickness of the electron transport layer is 5nm-100nm.

[0094] In some embodiments, the electron transport layer has a thickness of 5 nm, 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range between any two of the recited values or any of the recited ranges.

[0095] In some embodiments, the hole transport layer in the functional layer comprises at least one of nickel oxide, poly“bis(4-phenyl)(2,4,6-trimethylphenyl)amine (PTAA), poly(3,4- ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS), MeO-2PACz ([2-(3,6- dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid), and / or Me-4PACz (4-(3,6-dimethyl- 9H-carbazol-9-yl)butyl]phosphonic acid).

[0096] In some embodiments, the hole transport layer has a thickness of 10 nm to 100 nm.

[0097] In some embodiments, the hole transport layer has a thickness of 10 nm, 15 nm, 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, 55 nm, 60 nm, 65 nm, 70 nm, 75 nm, 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, or a range between any two of the recited values or any of the recited ranges.

[0098] In some embodiments, the first electrode can be at least one of fluorine-doped tin oxide conductive glass (FTO), indium tin oxide conductive glass (ITO), aluminum-doped zinc oxide conductive glass (AZO), boron-doped zinc oxide (BZO) conductive glass, indium zinc oxide (IZO) conductive glass.

[0099] In some embodiments, the first electrode has a thickness of 10 nm to 1000 nm.

[0100] In some embodiments, the first electrode has a thickness of 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1000 nm, or a range between any two of the recited values or any of the recited ranges.

[0101] In some embodiments, the second electrode comprises an organic or inorganic or organic-inorganic hybrid conductive material, including but not limited to the following materials: Ag (silver), Cu (copper), C (carbon), Au (gold), Al (aluminum), indium tin oxide conductive glass (ITO), aluminum-doped zinc oxide conductive glass (AZO), boron-doped zinc oxide (BZO) conductive glass, indium zinc oxide (IZO) conductive glass.

[0102] In some embodiments, the thickness of the second electrode is 10 nm-1000 nm.

[0103] In some embodiments, the thickness of the second electrode is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1000 nm, or a range between any two of the above values or any value in any of the above ranges.

[0104] In some embodiments, the solar cell comprises a first electrode, a functional layer, and a second electrode stacked in sequence from bottom to top. In some embodiments, the solar cell comprises a second electrode, a functional layer, and a first electrode stacked in sequence from bottom to top.

[0105] In this document, "from bottom to top" can be determined in the direction of gravity. Wherein the direction of gravity is downward, and the direction away from the direction of gravity is upward.

[0106] In some embodiments, the functional layer comprises an electron transport layer, a light absorption layer, and a hole transport layer stacked in sequence from bottom to top.

[0107] In some embodiments, the functional layer comprises a hole transport layer, a light absorption layer, and an electron transport layer stacked in sequence from bottom to top. In some embodiments, a first passivation layer is further provided between the electron transport layer and the light absorption layer.

[0108] In some embodiments, a second passivation layer is further provided between the light absorption layer and the hole transport layer.

[0109] The first passivation layer and the second passivation layer each independently comprise a passivation molecule that can reduce the crystal defects of the functional layer compound, and the passivation molecules in the first passivation layer and the second passivation layer can be the same or different.

[0110] In some embodiments, the second passivation layer comprises one or more of self-assembled molecules with π-π conjugation and one end anchoring to the substrate under perovskite, including 3-triethoxysilylpropionitrile, 2-aminothiazole-4-acetic acid, 1-hydroxy-4-carbonyl benzene.

[0111] In some embodiments, the second passivation layer comprises one or more of piperazine, N-methyl-1,3-propanediammonium diiodide, 3-aminopyridine, ferrocene.

[0112] In some embodiments, the first passivation layer comprises one or more of piperazine, N-methyl-1,3-propanediammonium diiodide, 3-aminopyridine, ferrocene.

[0113] In some embodiments, the first passivation layer comprises one or more of self-assembled molecules with π-π conjugation and one end anchoring to the substrate under perovskite, including 3-triethoxysilylpropionitrile, 2-aminothiazole-4-acetic acid, 1-hydroxy-4-carbonyl benzene.

[0114] In some embodiments, the solar cell is a perovskite formal structure (n-i-p structure). In some embodiments, the solar cell is a perovskite reverse structure (p-i-n structure).

[0115] In some embodiments, the solar cell comprises, from bottom to top, a first electrode, a hole transport layer, a second passivation layer, a light absorption layer, a first passivation layer, an electron transport layer, and a second electrode.

[0116] In some embodiments, the solar cell comprises, from bottom to top, a first electrode, an electron transport layer, a first passivation layer, a light absorption layer, a second passivation layer, a hole transport layer, and a second electrode.

[0117] In some embodiments, there is a blocking layer between the electron transport layer and the second electrode.

[0118] In some embodiments, the blocking layer comprises, but is not limited to, the following materials: indium oxide doped with tungsten oxide (IWO), indium tin oxide (ITO), bathocuproin (BCP), zirconium acetylacetonate.

[0119] The short-circuit point in the solar cell is significantly reduced, which is conducive to improving the open-circuit voltage and the photoelectric conversion efficiency.

[0120] [Preparation method]

[0121] The second aspect of the present application provides a preparation method of a solar cell, the preparation method comprising:

[0122] providing a first electrode, and performing P1 scribing;

[0123] forming a functional layer on at least one side of the first electrode, and performing P2 scribing;

[0124] forming a second electrode on the side of the functional layer away from the first electrode, and cutting the functional layer and the second electrode to form a P3 groove;

[0125] depositing an insulating layer on the surface of the second electrode away from the functional layer, the inner wall and the bottom end surface of the P3 groove, to obtain the solar cell.

[0126] The preparation method of the solar cell has a wide range of application, can be applied to the preparation of formal and reverse solar cells, and can be performed at a relatively low temperature (below 200°C), thereby reducing the consumption of energy and the degradation of perovskite materials and other temperature-sensitive materials in the cell, improving the stability and photoelectric conversion efficiency of the solar cell. In addition, the preparation method of the solar cell has a short preparation period, which is conducive to realizing high-speed continuous production.

[0127] In some embodiments, the preparation method of the solar cell specifically comprises:

[0128] providing a first electrode, and performing P1 scribing;

[0129] forming a first carrier transport layer on at least one side of the first electrode, and performing P2 scribing;

[0130] forming a light-absorbing layer on the side of the first carrier transport layer away from the first electrode;

[0131] forming a second carrier transport layer on the side of the light-absorbing layer away from the first carrier transport layer;

[0132] forming a second electrode on the side of the second carrier transport layer away from the light-absorbing layer;

[0133] cutting the first carrier transport layer, the light-absorbing layer, the second carrier and the second electrode to form a P3 groove;

[0134] depositing an insulating layer on the surface of the second electrode away from the functional layer, the inner wall and the bottom end surface of the P3 groove, to obtain the solar cell.

[0135] In some embodiments, the first carrier transport layer is a hole transport layer, and the second carrier transport layer is an electron transport layer. In some embodiments, the first carrier transport layer is an electron transport layer, and the second carrier transport layer is a hole transport layer.

[0136] In some embodiments, the preparation method comprises: forming an electron transport layer on at least one side of the first electrode, providing a first passivation layer on the side of the electron transport layer away from the first electrode, and performing P2 scribing.

[0137] In some embodiments, the preparation method comprises: providing a second passivation layer on the side of the light-absorbing layer away from the electron transport layer.

[0138] In some embodiments, the preparation method comprises: forming a hole transport layer on at least one side of the first electrode, providing a second passivation layer on the side of the hole transport layer away from the first electrode, and performing P2 scribing.

[0139] In some embodiments, the preparation method comprises: providing a first passivation layer on the side of the light-absorbing layer away from the hole transport layer.

[0140] The process flow of the preparation method is mature and can be applied to formal or inverted perovskite solar cells with different layer structures.

[0141] In some embodiments, the second electrode is formed with the insulating layer on the side surface away from the functional layer and the inner wall and bottom end surface of the P3 groove under a deposition condition of no more than 200°C.

[0142] In some embodiments, the second electrode is formed with the insulating layer on the side surface away from the functional layer and the inner wall and bottom end surface of the P3 groove under a deposition condition of 50°C-60°C.

[0143] In some embodiments, the temperature of the deposition process is 20°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C, 100°C, 120°C, 140°C, 160°C, 180°C, 200°C, or a range between any two of the above values or any value in any of the above ranges.

[0144] Perovskite compounds with ABX3 structure can become thermodynamically unstable at high temperature conditions and easily decompose. For example, methylammonium lead iodide (MAPbI3) can decompose into PbI2 and MA + I - ; In addition, high temperature also promotes the diffusion of ions, so that organic cations and halide anions can migrate out of the perovskite lattice, leading to structural defects and eventual material degradation. Such diffusion can also promote reactions at the interface between perovskite and other materials, further accelerating degradation and affecting the light absorption performance of the cell. Therefore, forming the insulating layer on the side surface of the second electrode away from the functional layer and the inner wall and bottom end surface of the P3 groove under low temperature conditions is beneficial to avoiding the degradation of perovskite materials, improving light absorption performance, and thus improving the photoelectric conversion efficiency and stability of the cell.

[0145] In some embodiments, the deposition of the insulating layer is performed by at least one of evaporation, sputtering, spraying, and blade coating.

[0146] In some embodiments, the deposition of the insulating layer is performed by at least one of evaporation and sputtering.

[0147] In some embodiments, the deposition of the insulating layer is performed by sputtering.

[0148] The insulating layer prepared by sputtering has good compactness, uniformity, and adhesion. In addition, the sputtering process can be performed at a relatively low temperature (below 200°C), which can reduce the degradation of temperature-sensitive materials such as perovskite in the solar cell, and also reduce the thermal stress inside the solar cell module, thereby reducing the cracking or peeling of the thin film layer due to the mismatch of the thermal expansion coefficients of different materials, and improving the stability and photoelectric conversion efficiency of the solar cell.

[0149] In some embodiments, the volume ratio of oxygen in the gas atmosphere during the deposition process is 0.1%-10%.

[0150] In some embodiments, the volume ratio of oxygen in the gas atmosphere during the deposition process is 0.1%, 0.5%, 1%, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, or any value within the range between any two of the above values.

[0151] The oxygen in the deposition gas atmosphere helps the deposition of the raw material (e.g., metal oxide) to form an oxide film, i.e., the insulating layer. However, under the bombardment energy, the oxygen can form ozone with high oxidation and activity, which can oxidize the deposition raw material to a higher-valence oxide, affecting the insulating performance of the insulating layer. Controlling the volume ratio of oxygen in the deposition gas atmosphere can adjust the amount of ozone generated during the deposition process, and further adjust the molar ratio of metal atoms of different valences in the insulating layer, so as to reduce the molar content of metal atoms of high valence and improve the insulating performance of the insulating layer.

[0152] In some embodiments, the bombardment energy of the deposition device to the target material (i.e., the deposition raw material) during the deposition process is 2.6-4KW.

[0153] In some embodiments, the bombardment energy of the deposition device to the target material is 2.6KW, 2.8KW, 3.0KW, 3.2KW, 3.5KW, 3.7KW, 4.0KW, or any value within the range between any two of the above values.

[0154] In the present disclosure, the term "bombardment energy" refers to the energy of particles (e.g. ions or electrons) when they hit the surface of the substrate during deposition. The bombardment energy affects the structure and chemical properties of the film, and in turn affects the valence state of metal atoms in the insulating layer. A suitable bombardment energy is conducive to the successful preparation of the insulating layer, and also helps to improve the production speed and efficiency.

[0155] Adjusting the volume ratio of oxygen in the gas atmosphere and the bombardment energy helps to control the content of high-valence metal oxides, improve the insulating properties of the insulating layer, and at the same time, take into account the good production efficiency.

[0156] In some embodiments, the target material comprises one or more of metal oxides, metal hydroxides, metal nitrides, and non-metal nitrides, wherein the metal oxides comprise one or more of nickel oxide, tin oxide, aluminum oxide, and indium oxide-doped tungsten oxide (IWO); the metal hydroxides comprise one or more of magnesium hydroxide, aluminum hydroxide, and calcium hydroxide; the metal nitrides comprise one or more of aluminum nitride and magnesium nitride; and the non-metal nitrides comprise one or more of silicon nitride and boron nitride.

[0157] In some embodiments, the metal oxide is NiO.

[0158] In some embodiments, the metal oxide is SnO.

[0159] In some embodiments, the metal oxide is Al2O3.

[0160] In some embodiments, the metal oxide is indium oxide-doped tungsten oxide (IWO).

[0161] The deposition raw material has a high resistance value, and can be used to prepare an insulating layer with excellent insulating properties. At the same time, the melting point of the target material is relatively low, which is conducive to reducing the energy consumption of the solar cell.

[0162] In some embodiments, the method for preparing the functional layer comprises, but is not limited to, magnetron sputtering, atomic deposition, and spin coating.

[0163] In some embodiments, the method for preparing the passivation layer comprises, but is not limited to, magnetron sputtering, atomic deposition, and spin coating.

[0164] In some embodiments, the deposition method of the barrier layer comprises, but is not limited to, evaporation or reactive ion plating.

[0165] The third aspect of the present disclosure provides a power utilization device comprising the solar cell of the embodiments of the present disclosure and the solar cell prepared by the method of the embodiments of the present disclosure.

[0166] The fourth aspect of the present application provides a power generation device comprising the solar cell of the embodiments of the present application or the solar cell prepared by the preparation method of the embodiments of the present application.

[0167] In some embodiments, the power utilization device can include a mobile device (such as a mobile phone, a notebook computer, etc.), an electric vehicle (such as a pure electric vehicle, a hybrid electric vehicle, a plug-in hybrid electric vehicle, an electric bicycle, an electric scooter, an electric golf cart, an electric truck, etc.), an electric train, a ship and a satellite, an energy storage system, etc., but is not limited thereto. The location of the power generation device can include, but is not limited to, the roof of a car, a back plate, etc.

[0168] Embodiments

[0169] Hereinafter, the embodiments of the present application are described. The embodiments described below are exemplary and are only used to explain the present application and cannot be understood as a limitation of the present application. If a specific technology or condition is not specified in the embodiments, the technology or condition described in the literature in the art or according to the product manual is used. If the reagent or instrument used is not specified by the manufacturer, it is a conventional product that can be obtained by purchase.

[0170] I. Preparation of a solar cell

[0171] Example 1

[0172] Preparation of a perovskite solar cell:

[0173] 1) Preparation of a transparent electrode: Take FTO glass with a specification of 1.0 x 2.0 m, clean and dry, then perform P1 scribe etching, with an etching width of 50 μm, to obtain a transparent electrode. 2

[0174] 2) Preparation of a hole transport layer: The transparent electrode after P1 scribe is subjected to ultraviolet ozone treatment, and a nickel oxide layer with a thickness of 50 nm is magnetron sputtered, and annealed at 300°C for 60 min to obtain a hole transport layer.

[0175] 3) Preparation of a perovskite layer: 1.7 mmol of lead iodide, 1.52 mmol of iodomethanimine, and 0.08 mmol of cesium iodide are dissolved in 1 mL of a mixed solution of DMF (dimethylformamide) and DMSO (dimethyl sulfoxide) with a volume ratio of 4:1, stirred for 2 h, filtered with a 0.22 μm organic filter membrane, to obtain a perovskite precursor solution, spin-coat the perovskite precursor solution on the surface of the hole transport layer at 5000 rpm for 30 s, and finally drop 150 μL of anisole to the center of the substrate in the last 5 s, anneal at 100°C for 60 min, and cool to room temperature to obtain a perovskite light-absorbing layer with a thickness of 500 nm.

[0176] ​4) Preparation of the electron transport layer: the thin film with the prepared perovskite light-absorbing layer was placed into an evaporation instrument, and the evaporation vacuum was reduced to 5x10 -4 Pa, and 30 nm of C60 was evaporated at a rate of 0.05 A / s to obtain an electron transport layer, and P2 scribe etching was performed with an etching width of 80 μm.

[0177] 5) Preparation of the metal electrode: the thin film with the prepared electron transport layer was placed into an evaporation instrument, and the evaporation vacuum was reduced to 5x10 -4 Pa, and 80 nm of a metal second electrode copper (Cu) was evaporated at a rate of 0.1 A / s to obtain a metal electrode; P3 scribe etching was performed with an etching width of 50 μm.

[0178] 6) Preparation of the insulating layer: the above assembly was placed into a magnetron sputtering device to prepare an insulating layer, and the target material was nickel oxide (NiO), and the preparation parameters were as follows: the deposition temperature was 50°C, the oxygen volume ratio in the gas atmosphere during the deposition process was 2.4%, the power for bombarding the target material was 2.97 KW, and the moving speed of the battery assembly in the magnetron sputtering device was 1.11 m / min, and the nickel oxide insulating layer was formed.

[0179] Example 2-9

[0180] The preparation method of Example 2-9 was basically the same as that of Example 1, except that the oxygen volume ratio in the deposition gas atmosphere, the target material, or the thickness was adjusted, and the specific parameters are shown in Table 1.

[0181] Example 10

[0182] The preparation method of Example 10 was basically the same as that of Example 1, except that the target material was nickel oxide (Al2O3), and the preparation parameters were as follows: the deposition temperature was 50°C, the oxygen volume ratio in the gas atmosphere during the deposition process was 6.6%, the power for bombarding the target material was 3.4 KW, and the moving speed of the battery assembly in the magnetron sputtering device was 1.11 m / min, and the aluminum oxide insulating layer was formed, and the specific parameters are shown in Table 1.

[0183] Example 11

[0184] The preparation method of Example 11 was basically the same as that of Example 1, except that the target material was IWO, and the preparation parameters were as follows: the deposition temperature was 50°C, the oxygen volume ratio in the gas atmosphere during the deposition process was 1.42%, the power for bombarding the target material was 3.0 KW, and the moving speed of the battery assembly in the magnetron sputtering device was 1.11 m / min, and the aluminum oxide insulating layer was formed, and the specific parameters are shown in Table 1.

[0185] Comparative Example 1

[0186] The preparation method was the same as that of Example 1, except that no insulating layer was deposited.

[0187] Table 1 shows the specific preparation parameters of the examples and comparative examples.

[0188] Table 1

[0189] The solar cells prepared in the examples and comparative examples were tested for performance using the following test methods:

[0190] 1. Test of metal oxide element types and content (XPS)

[0191] The sample was tested using an X-ray photoelectron spectrometer (Axis Supra / Supra+), with an X-ray pass energy of 80 eV, an emission current of 10 mA, and an anode voltage of 15 KV. After the test was completed, the peak intensity report was exported according to the software (ESCApe) provided with the instrument, and the relative molar content of the metal elements was obtained. The molar ratio of metal atoms in different valence states was calculated.

[0192] 2. Test of open circuit voltage, short circuit current, fill factor, and photoelectric conversion efficiency

[0193] The open circuit voltage, short circuit current, and fill factor of the battery were tested using a Keithley 2400 SMU, an AM 1.5G solar radiation test system under a light source of 100 mW / cm 2 The photoelectric conversion efficiency was calculated using the following formula: PCE = Pout / Popt = Voc x Jsc x (Vmpp x Jmpp) / (Voc x Jsc x Popt) = Voc x Jsc x FF / Popt

[0194] where Pout(mW / cm 2 ), Popt(mW / cm 2 ), Vmpp(V), Jmpp(mA / cm 2 ), Voc(V), and Jsc(mA / cm 2 ), FF are the working output power of the battery, the incident light power, the maximum power point voltage of the battery, the maximum power point current of the battery, the open circuit voltage, the short circuit current density, and the fill factor, respectively. The short circuit current density Jsc was calculated by dividing the short circuit current by the area of the solar cell.

[0195] 3. Test of insulating layer resistance

[0196] The channel resistance of the P3 groove, i.e., the resistance of the insulating layer, was obtained by overlapping the probes of a multimeter (resistance meter) on both sides of the P3 groove, with the current passing through the anode probe, through the film layer of the battery, and back to the cathode probe.

[0197] The test results of Examples 1-11 and Comparative Example 1 are shown in Table 2:

[0198] Table 2

[0199] As can be seen from Examples 1-11 and Comparative Example 1, after the surface of the solar cell on the side of the metal electrode away from the electron transport layer and the inner wall and bottom surface of the P3 groove are covered with the insulating layer including metal oxide, the short-circuit points in the solar cell can be reduced, the electron and hole recombination can be reduced, the open-circuit voltage of the solar cell can be improved, and the photoelectric conversion efficiency can be improved.

[0200] As can be seen from Examples 1-3 and Examples 6-9, after the content of oxygen in the deposition gas atmosphere is increased, the content of high-valence metal atoms in the insulating layer is correspondingly increased, and the photoelectric conversion efficiency of the solar cell is reduced. This indicates that after the content of high-valence metal atoms in the insulating layer is increased, the insulating performance of the insulating layer is reduced, the short-circuit points in the solar cell are increased, the carrier recombination is increased, and the photoelectric conversion efficiency of the solar cell is reduced.

[0201] As can be seen from Examples 1-3, the photoelectric conversion efficiency is good when the molar ratio of trivalent nickel atoms to divalent nickel atoms is in the range of (0.1-0.4):1. Among them, when the molar ratio is in the range of (0.20-0.30):1, the photoelectric conversion efficiency of the solar cell is significantly improved.

[0202] As can be seen from Examples 6-9, the photoelectric conversion efficiency is good when the molar ratio of tetravalent tin atoms to divalent tin atoms is in the range of (5-100):1. Among them, when the molar ratio is in the range of (5-50):1, the photoelectric conversion efficiency of the solar cell is significantly improved.

[0203] As can be seen from Examples 1-5, the photoelectric conversion efficiency is good when the thickness of the insulating layer is in the range of 5nm-100nm. When the thickness of the insulating layer is in the range of 5nm-50nm, the photoelectric conversion efficiency of the solar cell is significantly improved. In addition, when the thickness of the insulating layer is in the range of 15nm-35nm, the photoelectric conversion efficiency of the solar cell can be further improved.

[0204] As can be seen from Example 11 and Comparative Example 1, the solar cell using IWO to prepare the insulating layer can improve the photoelectric conversion efficiency of the solar cell. As can be seen from Examples 1, 6, 10 and Example 11, under the condition that the insulating layer has the same thickness, the solar cell using nickel oxide, tin oxide and aluminum oxide to prepare the insulating layer has more excellent photoelectric conversion efficiency.

[0205] The solar cells prepared in Example 1, Example 11 and Comparative Example 1 were subjected to electroluminescence (EL) test to detect the short-circuit points in the cells, and the test method was as follows:

[0206] Referring to NB / T 11080-2023 photovoltaic module electroluminescence (EL) detection technical specification, the solar cell complete assembly is placed in the electroluminescence detector, the test parameter 200V of the electroluminescence detector is set, the intensity and distribution signal of light are recorded in real time according to the data acquisition system, and the abnormal bright spot, i.e. the short circuit point, is judged.

[0207] Figures 2, 3 and 4 respectively show the test result graphs of Example 1, Example 11 and Comparative Example 1, and it can be seen that, after the metal electrode of the battery assembly in Comparative Example 1 is away from the surface of the functional layer on one side and the inner wall and bottom end surface of the P3 groove are covered with an insulating layer, the number of bright spots (i.e. short circuit points) is significantly reduced.

Claims

1. A solar cell, characterized by, The solar cell comprises a first electrode, a functional layer and a second electrode which are sequentially stacked, and a P3 groove formed through the second electrode and the functional layer, The second electrode is covered with an insulating layer on the side surface away from the functional layer, the inner wall of the P3 groove and the bottom end surface, and the resistance of the insulating layer is 2000-10 8 Ω.

2. The solar cell according to claim 1, wherein, the bottom end of the P3 groove exposes the first electrode; and / or, The resistance of the insulating layer is 10 5 Ω-10 8 Ω; and / or, the thickness of the insulating layer is 5 nm-100 nm.

3. The solar cell according to claim 1 or 2, wherein, the resistance of the insulating layer is 2000 Ω-5000 Ω; or, the thickness of the insulating layer is 15 nm-50 nm.

4. The solar cell according to any one of claims 1 to 3, characterized in that, the insulating layer comprises one or more of metal oxide, metal hydroxide, metal nitride, non-metallic nitride, wherein, the metal oxide comprises one or more of nickel oxide, tin oxide, aluminum oxide, indium oxide doped with tungsten oxide; the metal hydroxide comprises one or more of magnesium hydroxide, aluminum hydroxide, calcium hydroxide; the metal nitride comprises one or more of aluminum nitride, magnesium nitride; the non-metallic nitride comprises one or more of silicon nitride, boron nitride.

5. The solar cell according to any one of claims 1 to 4, characterized in that, The metal oxide includes nickel oxide, the nickel oxide includes Ni 3+ and Ni 2+ , the molar ratio of Ni 3+ to Ni 2+ is (0.1-0.4):1 based on the molar amount of Ni atoms in the metal oxide.

6. The solar cell according to claim 5, characterized in that, Ni in an amount of 0.2-0.3 moles based on the molar amount of Ni atoms in the metal oxide 3+ The molar ratio of Ni 2+ to the metal oxide is (0.2-0.3):

1.

7. The solar cell according to any one of claims 1 to 4, wherein, The metal oxide includes tin oxide, the tin oxide includes Sn 4+ and Sn 2+ , the molar ratio of Sn 4+ to Sn 2+ is (5-100): 1 based on the molar amount of Sn atoms in the metal oxide.

8. The solar cell of claim 7, wherein, Sn in an amount of 5-50 mol% based on the molar amount of Sn atoms in the metal oxide 4+ with a molar ratio of (5-50):

1. 2+ with a molar ratio of (5-50):

1.

9. The solar cell according to any one of claims 1 to 8, characterized in that, the functional layer comprises a light-absorbing layer, and the light-absorbing layer comprises a perovskite compound, The perovskite compound includes ABX3, A is a monovalent cation, including methylamine group, formamidine group, Li + , Na + , K + , Cs + , Rb + One or more; B is a divalent cation, including Pb 2+ , Sn 2+ , W 2+ , Se 2+ , Rh 2+ , Ge 2+ , As 2+ , In 2+ , Sb 2+ One or more; X is a monovalent anion, including I - , Br - , Cl - One or more.

10. The solar cell of claim 9, wherein, The perovskite compound includes ABX3, A includes one or more of methylamine group, formamidine group, Cs + , Rb + , B includes one or more of Pb 2+ , Sn 2+ , X includes one or more of I - , Br - , Cl - .

11. A method of manufacturing a solar cell, characterized by, the preparation method comprises: providing a first electrode, and performing P1 scribing; forming a functional layer on at least one side of the first electrode, and performing P2 scribing; forming a second electrode on the side of the functional layer away from the first electrode, and cutting the functional layer and the second electrode to form a P3 groove; depositing an insulating layer on the surface of the side of the second electrode away from the functional layer, the inner wall and the bottom end of the P3 groove, to obtain the solar cell.

12. The method of claim 11, wherein, In the step of depositing the insulating layer, the deposition treatment method comprises at least one of evaporation, sputtering, spraying and blade coating; the temperature of the deposition treatment is not more than 200 ℃; in the gas atmosphere of the deposition treatment, the volume ratio of oxygen in the gas atmosphere is 0.1%-10%; and / or the power of the deposition equipment to the target material is 2.6 KW-4 KW.

13. The method of claim 12, wherein, the target material comprises one or more of metal oxide, metal hydroxide, metal nitride, non-metallic nitride, wherein, the metal oxide comprises one or more of nickel oxide, tin oxide, aluminum oxide, indium oxide doped with tungsten oxide; the metal hydroxide comprises one or more of magnesium hydroxide, aluminum hydroxide, calcium hydroxide; the metal nitride comprises one or more of aluminum nitride and magnesium nitride; the non-metallic nitride comprises one or more of silicon nitride and boron nitride.

14. An electrical device, characterized by The solar cell prepared by the preparation method of any one of claims 1-10 or any one of claims 11-13.

15. A power generation device characterized by comprising: The solar cell prepared by the preparation method of any one of claims 1-10 or any one of claims 11-13.

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