Reaction chamber for epitaxial process, and multi-wafer planetary epitaxial apparatus

Abstract

A reaction chamber (100) for an epitaxial process, which relates to the field of semiconductor manufacturing apparatuses. The reaction chamber comprises: an upper cover (1) provided at the top of a reaction cavity (2); a susceptor (3), which is rotatably arranged in the reaction cavity (2) and arranged in parallel with and spaced apart from the upper cover (1); and a plurality of satellite trays (31), which are circumferentially distributed on the susceptor (3) and configured to carry members to be processed, wherein the upper cover (1) is provided with a first gas intake structure (4) and second gas intake structures (5); a surface of each of said members comprises a plurality of concentric regions; each second gas intake structure (5) comprises a plurality of carrier gas output members (52) corresponding to the regions; a carrier gas ejected from each second gas intake structure (5) can press down at least part of a reaction gas ejected from the first gas intake structure (4); and by means of adjusting the carrier gas flow rate of any carrier gas output member (52), the film growth rate of the region of each member to be processed that corresponds to the carrier gas output member (52) can be changed.

Description

Reaction chamber of epitaxial process and multi-wafer planetary epitaxial equipment

[0001] Cross-reference to related applications

[0002] The present application is based on and claims priority to Chinese Patent Application No. 202411326162.4, filed on September 23, 2024, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present application relates to the field of semiconductor technology, in particular to a reaction chamber of epitaxial process and a multi-wafer planetary epitaxial equipment. BACKGROUND

[0004] At present, the mainstream silicon carbide epitaxial growth equipment on the market has horizontal single-chip (represented by Italy LPE) and planetary multi-chip (represented by Germany Aixtron). The LPE horizontal single-chip has an outlet divided into one middle path and two side paths, and the uniformity of the gas flow field is adjusted by adjusting the gas flow of the middle and side paths and the rotation speed of the tray. The Aixtron planetary multi-chip has a tower-shaped showerhead, generally 5 layers, and the graphite base revolves and the graphite small disc rotates, and the uniformity of the flow field is adjusted by adjusting the gas flow of each layer of the showerhead and the revolution / rotation speed of the graphite large / small disc. The thickness uniformity of the LPE and Aixtron epitaxial growth equipment is about 2%. As the requirements of devices are getting higher and higher, the epitaxial growth equipment cannot meet the requirements of high-quality devices for uniformity, and it is urgent to improve the flow field uniformity of the epitaxial growth equipment.

[0005] SUMMARY

[0006] The present application aims to at least partially solve one of the above technical problems in the prior art.

[0007] To solve the problem that the thin film growth uniformity cannot meet the requirements in the above epitaxial process, a first aspect of the present application provides an epitaxial process reaction chamber, comprising: a reaction cavity; an upper cover arranged on the top of the reaction cavity; a susceptor rotatably arranged in the reaction cavity and spaced apart from the upper cover; a plurality of satellite disks circumferentially distributed on the susceptor for carrying a workpiece to be processed, the susceptor can rotate around the rotation center axis of the susceptor, and the satellite disk can rotate around the rotation center axis of the satellite disk; wherein the upper cover is provided with a first gas inlet structure and a second gas inlet structure, the first gas inlet structure extends into the reaction cavity and extends along the rotation center axis of the susceptor by a predetermined distance, and can spray reaction gas into the surrounding reaction cavity; the second gas inlet structure is arranged around the first gas inlet structure and comprises a plurality of carrier gas output members which can independently input gas and are used for spraying carrier gas; any radius of the surface of the workpiece to be processed is divided into a plurality of continuous line segments, each line segment forms a plurality of adjacent non-overlapping concentric regions when rotating around the center of the workpiece to be processed, and each region corresponds to one or more carrier gas output members; the carrier gas sprayed by the second gas inlet structure can press down at least part of the reaction gas sprayed by the first gas inlet structure, and when the satellite disk rotates around the rotation center axis of the satellite disk, the film growth rate of the region of the workpiece to be processed corresponding to any carrier gas output member can be changed by adjusting the carrier gas flow of the carrier gas output member. Optionally, the second gas inlet structure comprises a plurality of top gas outlets opened on the bottom surface of the upper cover towards the reaction cavity and used for spraying carrier gas, the top gas outlets are uniformly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the susceptor, and each carrier gas output member comprises the top gas outlets on one or more adjacent concentric circles.

[0008] In addition, the epitaxial process reaction chamber according to the above embodiments of the present application can also have the following additional technical features:

[0009] According to an example of the present application, the number of top gas outlets on each concentric circle is the same, and the top gas outlets are distributed radially along a plurality of uniformly distributed radial directions.

[0010] According to an example of the present application, each carrier gas output member comprises at least two main channels which are symmetrically arranged about the rotation center axis of the susceptor.

[0011] According to an example of the present application, the carrier gas output member further comprises a secondary channel, and a communication cavity arranged between the main channel and the secondary channel, and the main channel and the secondary channel respectively communicate with the communication cavity from the top and bottom directions.

[0012] According to one example of the present application, the second gas inlet structure is located above the workpiece, a vertical projection of the second gas inlet structure has a width equal to the radius of the workpiece, and the vertical projection covers the path from the edge of the workpiece to the center of the workpiece along the width direction of the vertical projection.

[0013] According to one example of the present application, the carrier gas output members are equal in number to and one-to-one corresponding to the regions of the workpiece, and each carrier gas output member is located directly above the corresponding region of the workpiece.

[0014] According to one example of the present application, the workpiece is sequentially divided into n regions from the edge to the center along the radial direction, wherein the ith region is a circular ring, the nth region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output members include N and are sequentially arranged from inside to outside, the Ith carrier gas output member corresponds to the reaction gas of the mth region, wherein 1≤I≤N, N=n, m=I, N, m, and I are natural numbers.

[0015] According to one example of the present application, the workpiece is sequentially divided into n regions from the edge to the center along the radial direction, wherein the ith region is a circular ring, the nth region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output members include 2M and are sequentially arranged from inside to outside, the Pth carrier gas output member and the 2M+1-Pth carrier gas output member correspond to the mth region, wherein 1≤P≤2M, M=n, M, m, and P are natural numbers, when 1≤P≤M, m=P, and when M

[0016] According to one example of the present application, the workpiece is sequentially divided into n regions from the edge to the center along the radial direction, wherein the ith region is a circular ring, the nth region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output members include 2Q-1 and are sequentially arranged from inside to outside, the Rth carrier gas output member and the 2Q-Rth carrier gas output member correspond to the mth region, wherein 1≤R≤2Q-1, Q=n, Q, m, and R are natural numbers, when 1≤R≤Q, m=R, and when Q

[0017] According to one example of the present application, the first gas inlet structure is a multi-layer sleeve, the first gas inlet structure includes a plurality of first gas inlet channels, the first gas inlet channels include vertical channels and horizontal channels that are in communication with each other, wherein a plurality of vertical channels are coaxially arranged along the radial direction around the central axis of the first gas inlet structure, the vertical channels are arranged in the upper cover, and the horizontal channels are away from the upper cover and extend into the reaction cavity.

[0018] The second aspect of the present application provides a multi-piece planetary epitaxial equipment, comprising a reaction chamber comprising the epitaxial process of any one of the first aspect of the present application.

[0019] The reaction chamber of the present application is provided with a second gas inlet structure, and the carrier gas sprayed by the second gas inlet structure can press down the reaction gas sprayed by the first gas inlet structure, at least partially disperse the reaction gas flow, and make the reaction on the wafer surface more uniform, so that the film growth rate of each region on the final wafer is more uniform. Meanwhile, the second gas inlet structure comprises a plurality of carrier gas output members capable of independent gas inlet, and each non-overlapping concentric region of the wafer corresponds to one or more carrier gas output members, and by adjusting the carrier gas flow of any carrier gas output member, the film growth rate of the region of the workpiece corresponding to the carrier gas output member can be changed, the adjustment efficiency is high, and the film uniformity is also better. By using carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the reaction gas with the preset proportion will not be damaged; on the other hand, the amount of reaction gas can be saved, and the reaction gas will not be wasted, and by adding the carrier gas output member above, the adjustment method can be simplified, and the difficulty of film uniformity adjustment can be greatly reduced.

[0020] Additional aspects and advantages of the present application will be in part apparent and in part pointed out hereinafter in the description. BRIEF DESCRIPTION OF DRAWINGS

[0021] Fig. 1 is a structural schematic view of a reaction chamber of an epitaxial process in an embodiment of the present application;

[0022] Fig. 2 is a structural schematic view of a reaction chamber of an epitaxial process in an embodiment of the present application;

[0023] Fig. 3 is a structural schematic view of a reaction chamber of an epitaxial process in an embodiment of the present application;

[0024] Fig. 4 is a structural schematic view of a gas inlet pipeline of an epitaxial equipment in an embodiment of the present application;

[0025] Fig. 5 is a structural schematic view of a gas inlet pipeline of an epitaxial equipment in an embodiment of the present application;

[0026] Fig. 6 is a structural schematic view of a gas inlet pipeline of an epitaxial equipment in an embodiment of the present application;

[0027] Fig. 7 is a sectional view of a first gas inlet structure of a reaction chamber of an epitaxial process in an embodiment of the present application;

[0028] Fig. 8 is a structural schematic view of a first gas inlet structure of a reaction chamber of an epitaxial process in an embodiment of the present application;

[0029] Figure 9 is a cross-sectional view of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0030] Figure 10 is a structural schematic diagram of a first gas inlet structure of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0031] Figure 11 is a structural schematic diagram of a wafer of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0032] Figure 12 is a structural schematic diagram of a wafer of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0033] Figure 13 is a simulation result diagram of a gas flow field of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0034] Figure 14 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0035] Figure 15 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0036] Figure 16 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0037] Figure 17 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0038] Figure 18 is a partial structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0039] Figure 19 is a structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application;

[0040] Figure 20 is a partial structural schematic diagram of a reaction chamber for an epitaxial process according to an embodiment of the present application.

[0041] Reference signs: 100, reaction chamber; 1, upper cover; 2, reaction cavity; 21, side wall; 3, base; 31, satellite disc; 32, wafer; 321, outer ring area; 322, middle ring area; 323, inner ring area; 4, first gas inlet structure; 41, first gas outlet hole; 42, first gas inlet channel; 421, first layer; 422, second layer; 423, third layer; 425, fifth layer; 426, sixth layer; 427, seventh layer; 45, partition; 46, vertical channel; 47, horizontal channel; 48, vertical section; 49, horizontal section; 5, second gas inlet structure; 51, top gas outlet hole; 52, carrier gas output; 521, inner carrier gas output; 522, middle carrier gas output; 523, outer carrier gas output; 53, main channel; 531, first main channel; 532, second main channel; 533, third main channel; 534, fourth main channel; 535, fifth main channel; 536, sixth main channel; 54, secondary channel; 55, communication cavity; 56, vertical projection; 6, gas inlet pipeline; 61, first branch pipe; 62, second branch pipe; 63, third branch pipe; 7, rotating mechanism; 9, heating device; 10, base. DETAILED DESCRIPTION

[0042] Embodiments of the present application are described below in detail with reference to the accompanying drawings, wherein the same or similar components or components having the same or similar functions are denoted by the same or similar reference numerals throughout. The embodiments described below by reference to the accompanying drawings are exemplary and are intended to explain the present application, and cannot be understood as limiting the present application.

[0043] The following disclosure provides many different embodiments, or examples, for implementing different structures of the present application. For the purpose of simplicity, the elements and settings of the specific examples in the following are described in some detail. Of course, they are merely examples and are intended to be illustrative, and not limiting of the present application. Furthermore, the present application can be used in various examples without departing from the scope of the present application. In addition, the present application provides various specific examples of processes and materials, but one of ordinary skill in the art can realize the applicability of other processes and / or the use of other materials.

[0044] The "multi-piece planetary" of the present application refers to each base 3 supporting at least 2 or more satellite discs 31, such as 2, 3, 4, etc., each satellite disc 31 supporting one wafer, and the base 3 can be a planetary base, i.e. the satellite discs 31 are distributed in a circle around the center of the base 3. In the wafer epitaxy process, the satellite discs 31 rotate around the center axis of the base 3, and each satellite disc 31 rotates around its own center axis under the action of fluid.

[0045] In some epitaxy equipment with horizontal gas outlet structure, the concentration of the reaction gas sprayed horizontally decreases along the forward direction due to continuous chemical reaction, so that the film growth rate of the wafer is the highest at the side closest to the horizontal gas outlet structure, and the farther away from the horizontal gas outlet structure, the lower the film growth rate of the wafer. At the same time, due to the continuous rotation of the satellite disc 31 with the wafer, the area of the wafer closest to the horizontal gas outlet structure will theoretically be repeatedly deposited by more reaction products after reaction of the reaction gas, and the area far away from the horizontal gas outlet structure will be repeatedly deposited by less reaction products or even not be repeatedly deposited, so that the film growth on the wafer is very uneven.

[0046] Referring to FIG. 1, FIG. 2, and FIG. 3, in order to solve the above problems, embodiments of the present application provide a multi-piece planetary epitaxy equipment, which comprises an epitaxy process reaction chamber 100. In some embodiments, the epitaxy process reaction chamber 100 comprises an upper cover 1, a reaction chamber 2, a susceptor 3, and a plurality of satellite discs 31. The reaction chamber 2 defines a process environment space, the upper cover 1 is arranged on the top of the reaction chamber 2, the susceptor 3 is rotatably arranged in the reaction chamber 2 and is arranged in parallel and spaced apart from the upper cover 1, and further, the susceptor 3 can rotate around the rotation center axis c of the susceptor 3. The plurality of satellite discs 31 are circumferentially distributed on the susceptor 3, the satellite disc 31 is used for carrying a workpiece to be processed, the satellite disc 31 can revolve around the rotation center axis c of the susceptor 3, and can also rotate around the rotation center axis d of the satellite disc 31.

[0047] The workpiece to be processed of the present application refers to any substrate on which a film forming process is performed during the manufacturing process. The substrate includes a wafer 32 or is described as a wafer, a substrate, an epitaxial wafer, a substrate, etc. The materials on which the film forming process can be performed include materials such as silicon, silicon carbide, silicon oxide, strained silicon, carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium arsenide, gallium nitride, glass, sapphire, and any other material such as metal, metal nitride, metal alloy, and other conductive materials, depending on the specific application. The substrate includes but is not limited to the wafer 32. In the following embodiments, the workpiece to be processed is taken as an example of the wafer 32, and it can be understood that the workpiece to be processed has a circular or nearly circular surface, and the workpiece to be processed can be a wafer, an epitaxial wafer, and other substrates are not limited. In the reaction chamber 2 of the multi-piece planetary epitaxy equipment, the semiconductor wafer 32 on which the film layer is to be grown is placed on the rapidly rotating satellite disc 31, so that the surface is uniformly exposed to the atmosphere in the reaction chamber 2 for semiconductor material deposition.

[0048] As the reaction gas approaches the rotating susceptor 3 and / or satellite disk 31, the temperature of the reaction gas increases significantly, and the viscous drag of the rotating susceptor 3 and / or satellite disk 31 causes the gas to rotate about the axis of the susceptor 3 and / or satellite disk 31, so that the gas flows about the axis and outwardly toward the perimeter of the susceptor 3 and / or satellite disk 31 in a boundary region near the surface of the susceptor 3 and / or satellite disk 31. Depending on the reaction gas used in the process, pyrolysis can occur in or near the boundary region at an intermediate temperature between the temperature at the gas ejection location and the temperature of the susceptor 3 and / or satellite disk 31. This pyrolysis facilitates the interaction of the reaction gas with the growth of the crystal structure. The non-deposited gas continues to flow toward the perimeter and over the outer edge of the susceptor 3, where it can be removed from the reaction chamber 2 through one or more exhaust ports (not shown) disposed beneath the susceptor 3.

[0049] Referring to FIG. 1, FIG. 2, and FIG. 3, the base 3 of the reaction cavity 2 is a plate-shaped body, and the diameter thereof can be selected from a range between 500 mm and 2000 mm, and the material thereof can be selected from graphite or other high-temperature-resistant materials. In an embodiment, the base 3 is provided with a rotating mechanism 7 in the center thereof, and the rotating mechanism 7 can drive the base 3 to rotate. In an embodiment, a plurality of satellite plates 31 are arranged around the central axis of rotation of the base 3, and the satellite plates 31 are used to carry workpieces to be processed, such as wafers 32. The satellite plates 31 can be made of quartz or graphite, or other high-temperature-resistant materials. In some embodiments, there are 6, 7, 8, 9, or other numbers of satellite plates 31 distributed around the center of the base 3 at equal distances from the center, and the satellite plates 31 are uniformly distributed in a circle. The distance from the center of the base 3 to the center of the satellite plates 31 can be selected from a range between 100 mm and 800 mm. It can be understood that the uniform distribution in the present application generally refers to equal-interval distribution. The satellite plates 31 are driven to rotate by air flow. In the present embodiment, the satellite plates 31 are configured in a disc shape, and in other embodiments, the satellite plates 31 can be square, hexagonal, or other shapes without limitation. In an embodiment, the base 3 rotates around the central axis c of the base 3, and the satellite plates 31 can rotate around the central axis d of the satellite plates 31 and revolve around the central axis c of the base 3. The rotation speed of the base 3 can be selected from a range between 20 rpm and 300 rpm, and the rotation speed of the satellite plates 31 can be selected from a range between 120 rpm and 860 rpm. It can be understood that the rotation mode and rotation speed of the base 3 and the satellite plates 31 can be changed as needed without limitation. The base 3 provided in the present embodiment is provided with air grooves (not shown), and the satellite plates 31 are arranged opposite to the air grooves. The satellite plates 31 can be floated, supported, positioned, and / or rotated by the fluid flowing into the air grooves of the base 3. In some embodiments, the back surface of the satellite plates 31 is provided with flow channels for the fluid to flow. By controlling the characteristics of the fluid flowing from the air grooves to the surface of the satellite plates 31, such as the air flow rate of the fluid flowing from the air grooves, the floating height of the satellite plates 31 can be changed. The floating, supporting, positioning, and / or rotating of the satellite plates 31 are caused by the friction of the fluid flowing over the surface of the satellite plates 31 and the atomic kinetic energy transfer. The satellite plates 31 are floated and rotated around the central axis d thereof by the air flow, and the base 3 can drive the satellite plates 31 to rotate when the base 3 rotates.

[0050] The upper cover 1 is made of quartz or other high-temperature-resistant materials. In an embodiment, the outer diameter of the upper cover 1 is substantially consistent with the outer diameter of the base 3. In an embodiment, the outer diameter of the upper cover 1 is 500 mm-2000 mm. The distance between the upper cover 1 and the base 3 extending in parallel is about 80 mm-400 mm, and further, about 100 mm-200 mm. It can be understood that the distance can be adjusted as needed without limitation.

[0051] In one embodiment, referring to FIG. 1 and FIG. 3, the reaction chamber 100 comprises a sidewall 21 below the upper cover 1, the sidewall 21 and the upper cover 1 jointly enclose the reaction cavity 2. The sidewall 21 can be made of quartz or other high-temperature-resistant materials. In one embodiment, the bottom of the susceptor 3 is further provided with a heating device 9, which can be an electric resistance heating device, or an electromagnetic induction heating device, or an RFC heating device, etc. without limitation. The heating device 9 is used to heat the satellite disk 31, the workpiece to be processed, and the susceptor 3. In some embodiments, the reaction chamber 100 is further provided with a base 10, which is used to seal the reaction cavity 2 from below and to support the devices in the reaction cavity 2.

[0052] The upper cover 1 is provided with a first gas inlet structure 4 and a second gas inlet structure 5. The first gas inlet structure 4 is used to introduce reaction gas into the reaction cavity 2. It should be noted that in the field of semiconductor epitaxial growth technology, the flow of introduced reaction gas is usually not large. In order to avoid pre-reaction and to send the reaction gas to the designated reaction area, the reaction gas is usually introduced together with carrier gas. The introduction of reaction gas in this application refers to the inclusion of reaction gas and can also include other gases such as carrier gas, and is not limited to the introduction of reaction gas excluding carrier gas. The second gas inlet structure 5 is used to introduce carrier gas into the reaction cavity 2. The carrier gas introduced by the second gas inlet structure 5 into the reaction cavity 2 can push down at least part of the reaction gas introduced by the first gas inlet structure 4 into the reaction cavity 2 and make the gas flow introduced by the first gas inlet structure 4 into the reaction cavity 2 more dispersedly blow to the satellite disk 31. When the satellite disk 31 rotates around the center axis of rotation of the satellite disk 31, the film growth rate of the area of the workpiece corresponding to any of the carrier gas output members 52 can be changed by adjusting the flow of carrier gas of the carrier gas output member 52.

[0053] Pushing down refers to further moving downwardly deviating from the original movement track, i.e. the movement track after pushing down is below the movement track before pushing down. Pushing down is not limited to vertical pushing down, but also includes pushing down to the oblique downward, and the gas flow is also impacted by the vertical downward or oblique downward gas flow when advancing to the jet direction, so that the gas flow blows to the satellite disk 31 in a parabolic shape and compared with the gas flow naturally falling after horizontal jetting, some gas is scattered to make the gas flow field more uniform. In some embodiments, the ratio of carrier gas and reaction gas in the mixed gas jetted by the first gas inlet structure 4 can be set as needed, for example, the flow of reaction gas can be 1% of the flow of carrier gas. Optionally, the carrier gas is 40 SLM and the reaction gas is 0.4 SLM, which is not limited.

[0054] The reaction gas includes a first precursor gas and a second precursor gas. The first precursor gas is a gas containing a group V element, such as TCS (Trichlorosilane), a chemical substance with a chemical formula of SiHCl3, or a gas containing a group VI element. The second precursor gas is a gas containing a group III element organic matter, such as ethylene gas, or a gas containing a group II element. It can be understood that the first precursor gas and the second precursor gas can be interchanged. The carrier gas is a gas that does not react with the precursor gas, such as nitrogen or hydrogen.

[0055] The first gas inlet structure 4 and the second gas inlet structure 5 are respectively connected with a gas inlet pipeline 6. The structure of the gas inlet pipeline 6 includes at least one of the following structures: structure one, as shown in FIG. 4, the gas inlet pipeline 6 only includes a first branch pipe 61 for introducing the carrier gas; structure two, as shown in FIG. 5, the gas inlet pipeline 6 includes a first branch pipe 61 and a second branch pipe 62 connected with each other, wherein the first branch pipe 61 is used to introduce the carrier gas, and the second branch pipe 62 is used to introduce the reaction gas, which can be one of the first precursor gas and the second precursor gas; structure three, as shown in FIG. 6, the gas inlet pipeline 6 includes a first branch pipe 61, and a second branch pipe 62 and a third branch pipe 63 connected with the first branch pipe 61, respectively, wherein the first branch pipe 61 is used to introduce the carrier gas, the second branch pipe 62 is used to introduce one of the first precursor gas and the second precursor gas, and the third branch pipe 63 is used to introduce the doping gas. It should be noted that the first branch pipe 61, the second branch pipe 62, and the third branch pipe 63 are respectively provided with a flow controller (not shown), which can be a mass flow controller (MFC), and the flow controller is connected with a controller, so as to control the flow rate of the carrier gas, the reaction gas (at least one of the first precursor gas and the second precursor gas), and the doping gas according to the requirement. The above three structures of the gas inlet pipeline 6 can be selected according to the requirement to be connected with the first gas inlet structure 4 and the second gas inlet structure 5. For example, the gas inlet pipeline 6 of structure three is connected with the first gas inlet structure 4, and the gas inlet pipeline 6 of structure one is connected with the second gas inlet structure 5.

[0056] In some embodiments, the doping gas can be any one of NO, N2O, N2, etc. The flow rate of the doping gas can be set according to the requirement, for example, it can be 0.5% of the flow rate of the carrier gas. When the carrier gas is 40 SLM, the doping gas is 0.2 SLM, and is not limited.

[0057] It can be understood that when the doping source is not needed, the carrier gas can be directly introduced into the reaction gas or the reaction gas can be directly introduced into the carrier gas. The group III and group V compounds or group II and group VI compounds transported by the carrier gas are chemically reacted in the reaction chamber 2 under high temperature environment. At this time, the gas inlet pipeline 6 of the second gas inlet structure 2 is selected to communicate with the first gas inlet structure 4, and the products of the chemical reaction are deposited on the wafer 32 placed on the satellite disc 31 to form a thin film. The gas flow introduced by the second gas inlet structure 5 into the reaction chamber 2 can press down at least part of the gas flow introduced by the first gas inlet structure 4 into the reaction chamber 2 and blow to the satellite disc 31.

[0058] Please refer to FIG. 1, the upper cover 1 is provided with a through hole penetrating through the upper and lower surfaces of the upper cover 1 for the first gas inlet structure 4 to pass through. The first gas inlet structure 4 is arranged in the center of the upper cover 1 and extends into the reaction chamber 2. Specifically, the first gas inlet structure 4 extends into the reaction chamber 2 along the central axis of the rotation of the base 3 by a predetermined distance, and the first gas inlet structure 4 can discharge gas into the surrounding reaction chamber 2. In an embodiment, the predetermined distance, i.e. the height, of the first gas inlet structure 4 extending into the reaction chamber 2 can be selected as 20-200 mm, and the distance between the bottom of the first gas inlet structure 4 and the upper surface of the base 3 can be selected as 2-80 mm. It can be understood that in other embodiments, the height of the first gas inlet structure 4 extending into the reaction chamber 2 and the distance between the bottom of the first gas inlet structure 4 and the upper surface of the base 3 can also be other values.

[0059] Please refer to FIG. 7, the first gas inlet structure 4 includes a first gas outlet hole 41 provided on the bottom surface of the upper cover 1 and facing the reaction chamber 2, and the gas flow flows into the reaction chamber 2 from the first gas outlet hole 41. In some embodiments, the first gas inlet structure 4 includes a plurality of first gas inlet channels 42, and each first gas inlet channel 42 is provided with a plurality of first gas outlet holes 41.

[0060] One first gas inlet channel 42 of the first gas inlet structure 4 is individually communicated with one gas inlet pipeline 6, and all the first gas inlet channels 42 are communicated with the gas inlet pipelines 6. One carrier gas output member 52 of the second gas inlet structure 5 is individually communicated with one gas inlet pipeline 6, and all the carrier gas output members 52 are communicated with the gas inlet pipelines 6. In this way, the gas flow in each first gas inlet channel 42 / carrier gas output member 52 can be controlled by the controller, and the independent gas inlet of each carrier gas output member 52 can be realized. Further, the gas flow of different gases of the mixed gas can be controlled to change the volume ratio of different gases. The gas can be respectively sent into the first gas inlet structure 4 and the second gas inlet structure 5 through the gas inlet pipelines 6. In other embodiments, the multiple planetary epitaxial equipment further includes a gas source, and the gas can be introduced into the reaction chamber 2 by sending the gas source into the gas inlet pipeline 6.

[0061] In one embodiment, referring to FIG. 7 and FIG. 8, the first gas inlet structure 4 is a multi-layer sleeve, including an upper vertical section 48 and a lower horizontal section 49, wherein the vertical section 48 penetrates the upper cover 1, and the horizontal section 49 is arranged in the reaction cavity 2, and in some embodiments, the horizontal section 49 is spaced apart from the upper cover 1 by 0-10 mm, when the horizontal section 49 is close to the upper cover 1, the gas sprayed from the horizontal section 49 can blow the upper cover 1 from the horizontal direction, preventing the particles from falling. The first gas inlet structure 4 includes a plurality of first gas inlet channels 42, which include vertical channels 46 and horizontal channels 47 that are in communication with each other, wherein a plurality of vertical channels 46 are coaxially arranged radially around the central axis of the first gas inlet structure 4, the vertical channels 46 are arranged in the upper cover 1, and the horizontal channels 47 extend out of the upper cover 1 and into the reaction cavity 2, the gas first flows into the vertical channels 46, and after colliding with the channel wall, it turns and flows out along the horizontal channels 47. After the gas is introduced into the vertical channels 46 of the first gas inlet structure 4, it is buffered and then horizontally discharged, so that it is uniformly mixed in the horizontal direction, and such gas flow is more uniform, and the film forming effect is better.

[0062] In one embodiment, the outer surface of the vertical section 48 and the outer surface of the horizontal section 49 are both cylindrical, and the diameter of the former is smaller than the diameter of the latter.

[0063] In one embodiment, in addition to the centralmost vertical channel 46 being a cylindrical channel, the other vertical channels are all annular and coaxially arranged, each vertical channel 46 is in communication with a gas inlet pipe 6, so that the gas flow of each vertical channel 46 can be individually controlled.

[0064] In one embodiment, referring to FIG. 5 and FIG. 6, the horizontal section 49 is arranged in a stack from bottom to top, including a first layer 421, a second layer 422, a third layer 423, a fourth layer 424, a fifth layer 425, a sixth layer 426, and a seventh layer 427. Each first gas inlet channel 42 includes a vertical channel 46 arranged in the vertical section 48 and a plurality of horizontal channels 47 arranged in the horizontal section 49 and communicating with the vertical channel 46, the plurality of horizontal channels 47 are arranged in the same layer of the horizontal section 49, the horizontal channels 47 in the same layer are distributed along the radial direction of the first gas inlet structure 4 and communicate with each other through the bottom of the same vertical channel 46. Each horizontal channel 47 is provided with a plurality of first gas outlet holes 41 arranged at equal intervals on the outer circumferential surface of the horizontal section 49, and the gas flowing into the vertical channel 46 of the first gas inlet channel 42 finally flows out from different first gas outlet holes 41 in the same layer of the horizontal section 49. The plurality of first gas outlet holes 41 of the same first gas inlet channel 42 are uniformly distributed along the outer surface of the first gas inlet structure 4. In some embodiments, the number of first gas outlet holes 41 of different first gas inlet channels 42 is the same and aligned from top to bottom, and is arranged at equal intervals along the outer surface of the first gas inlet structure 4. It can be understood that the horizontal channels 47 of different first gas inlet channels 42 are arranged in different layers, so that the gas can flow out from the first gas outlet holes 41 in different layers, for example, ethylene flows out from the first layer 421 to the third layer 423, and TCS flows out from the third layer 423 to the sixth layer 426. In one embodiment, different first gas inlet channels 42 are separated from each other by the partition plate 45, and further, the vertical channels 46 and the vertical channels 46, the horizontal channels 47 and the horizontal channels 47, and the vertical channels 46 and the horizontal channels 47 are all separated by the partition plate 45. In one embodiment, the first gas inlet channel 42 extending into the reaction chamber 2 is arranged horizontally, so that the gas flowing through the first gas inlet channel 42 flows into the reaction chamber 2 in a horizontal direction. It can be understood that each horizontal channel 47 is provided with a plurality of first gas outlet holes 41 arranged at equal intervals along the circumference of the first gas inlet structure 4, and the horizontal channels 47 of the horizontal section 49 are arranged in a central radial manner and separated from each other by the partition plate 45. Optionally, the gas flow rate of each first gas inlet channel 42 is 20-50 SLM. In other embodiments, the gas flow rate of the first gas inlet channel 42 is 5-20 SLM or 50 SLM-100 SLM, which is not limited.

[0065] Referring to FIG. 2, FIG. 9, and FIG. 10, the second gas inlet structure 5 is arranged on the upper cover 1, and is arranged around the central axis of the first gas inlet structure 4 and spaced apart from the first gas inlet structure 4. In an embodiment, the second gas inlet structure 5 is annularly arranged on the upper cover 1. Optionally, the first gas inlet structure 4 and the second gas inlet structure 5 are spaced apart by 50-500 mm in the horizontal direction, further optionally 60-200 mm, and more further optionally 80-120 mm. The second gas inlet structure 5 includes a plurality of top gas outlet holes 51 arranged on the bottom surface of the upper cover 1 and facing the reaction cavity 2 and used for spraying carrier gas, and the top gas outlet holes 51 are uniformly arranged on a plurality of concentric circles distributed outward from the central axis c of the susceptor 3. It should be noted that the uniform arrangement on the plurality of concentric circles means that the top gas outlet holes 51 on each circle are uniformly distributed.

[0066] In some embodiments, the number of top gas outlet holes 51 on each concentric circle is the same, and the top gas outlet holes 51 are radially distributed along the plurality of uniformly distributed radial directions.

[0067] In some embodiments, the distance between the top gas outlet holes 51 on the same radial direction and distributed on adjacent concentric circles is equal.

[0068] The second gas inlet structure 5 includes a plurality of independently gas-inletable carrier gas output elements 52, each of which includes the top gas outlet holes 51 on one or more adjacent concentric circles. One or more carrier gas output elements 52 correspond to one region on the workpiece, and the film growth rate of the region on the workpiece corresponding to the carrier gas output element 52 can be adjusted by changing the gas flow of the carrier gas output element 52. It should be noted that one or more carrier gas output elements 52 correspond to one region on the workpiece means that the gas flow sprayed by each carrier gas output element 52 can affect the film growth rate of a specified region on the workpiece, and in some embodiments, it can be understood that the gas flow sprayed can cover the region on the workpiece. All regions on the workpiece have corresponding carrier gas output elements 52, and the film growth rate of a specified region can be affected by adjusting the carrier gas flow of any carrier gas output element 52.

[0069] In an embodiment, the second gas inlet structure 5 includes a plurality of carrier gas output elements 52, each of which includes a circle of top gas outlet holes 51, and gas can flow into the reaction cavity 2 through the top gas outlet holes 51.

[0070] In some embodiments, each carrier gas output element 52 includes 2 or 3 adjacent circles of top gas inlet holes 51, and the number of circles of top gas inlet holes 51 can be set as needed and is not limited.

[0071] In one embodiment, the top gas outlet hole 51 is at an angle with the first gas outlet hole 41, which can be 30°-150°, further can be 45°, 60°, 90°, 120°, 130°. The carrier gas vertically sprayed by the second gas inlet structure 5 can push down the reaction gas introduced by the first gas inlet structure 4 into the reaction cavity 2 and make the gas flow introduced by the first gas inlet structure 4 into the reaction cavity 2 blow to the satellite disk 31 in a parabolic shape.

[0072] In one embodiment, the first gas outlet hole 41 is the outlet of the first gas inlet channel 42, and the first gas outlet hole 41 of the first gas inlet structure 4 is at an angle of 45°-90° with the vertical direction, further can be 45°, 60°, 90°.

[0073] In one embodiment, the plurality of carrier gas output members 52 are arranged radially around the center of the upper cover 1. In one embodiment, the plurality of carrier gas output members 52 are arranged in a central-to-peripheral radiation manner. In one embodiment, the second gas inlet structure 5 includes a plurality of carrier gas output members arranged in the radial direction of the upper cover 1. By densely blowing gas through the plurality of carrier gas output members 52, the situation of uneven gas flow distribution in the reaction cavity 2 can be effectively prevented. The upper cover 1 densely covers the carrier gas output members 52, which can prevent the formation of particulate matter on the upper cover 1 and falling on the wafer 32.

[0074] In one embodiment, the top gas outlet hole 51 is a spray port, the shape of the spray port is a hole or a gap, the number of spray ports is 10-500, and the spray ports are distributed in a circumferential or array manner.

[0075] In some embodiments, the first gas outlet hole 41 is a circular hole or a square hole, and the hole diameter is 0.5mm-20mm, further can be 1mm-5mm, and further can be 2mm. It can be understood that the hole diameter of the first gas outlet hole 41 can also be selected as other values. The hole diameter of the top gas outlet hole 51 is 0.5mm-10mm, further can be 1mm-3mm, and further can be 2mm. The hole diameter of the top gas outlet hole 51 can also be selected as other values.

[0076] Referring to FIG. 9 and FIG. 10, the second gas inlet structure 5 includes a plurality of independently gas-inletable carrier gas output members 52, each of which includes a primary channel 53 and a secondary channel 54, the primary channel 53 and the secondary channel 54 being in fluid communication, the primary channel 53 and the secondary channel 54 being arranged in the upper cover 1, the gas flow first entering the primary channel 53 and then flowing into a plurality of secondary channels 54, and finally flowing into the reaction cavity 2 from the secondary channels 54. Specifically, a plurality of primary channels 53 are arranged radially outward from the center of the upper cover 1, for example, being divided into a first primary channel 531, a second primary channel 532, and a third primary channel 533 along the radial direction from inside to outside, and being provided with a fourth primary channel 534, a fifth primary channel 535, and a sixth primary channel 536 along the opposite radial direction. In the present embodiment, the second gas inlet structure 5 includes an inner carrier gas output member 521, a middle carrier gas output member 522, and an outer carrier gas output member 523, the inner carrier gas output member 521 including the first primary channel 531 and the fourth primary channel 534, the middle carrier gas output member 522 including the second primary channel 532 and the fifth primary channel 535, and the outer carrier gas output member 523 including the third primary channel 533 and the sixth primary channel 536. The first primary channel 531 and the fourth primary channel 534 are symmetrical about the rotation center axis of the base 3, the second primary channel 532 and the fifth primary channel 535 are symmetrical about the rotation center axis of the base 3, and the third primary channel 533 and the sixth primary channel 536 are symmetrical about the rotation center axis of the base 3. Such an arrangement can first pass the gas flow through the primary channels into the secondary channels 54 more uniformly, ensuring the consistency of the gas flow rate at each place.

[0077] Referring to FIG. 2 and FIG. 11, the surface of the workpiece is divided into a plurality of continuous line segments, each of which forms a plurality of adjacent non-overlapping concentric regions when rotated around the center of the workpiece, and each of the regions corresponds to one or more of the carrier gas outlets 52. In this embodiment, the workpiece is a wafer 32, and the surface of the wafer 32 is divided into an outer ring region 321, a middle ring region 322, and an inner ring region 323 from outside to inside. The second gas inlet structure 5 includes three carrier gas outlets 52 from inside to outside, i.e., an inner carrier gas outlet 521 corresponding to the outer ring region 321, a middle carrier gas outlet 522 corresponding to the middle ring region 322, and an outer carrier gas outlet 523 corresponding to the inner ring region 323. When the gas flow of the inner carrier gas outlet 521 is increased, the film growth rate of the outer ring region 321 is reduced. When the gas flow of the middle carrier gas outlet 522 is increased, the film growth rate of the middle ring region 322 is reduced. When the gas flow of the outer carrier gas outlet 523 is increased, the film growth rate of the inner ring region 323 is reduced. Similarly, when the gas flow of the inner carrier gas outlet 521, the middle carrier gas outlet 522, or the outer carrier gas outlet 523 is reduced, the film growth rate of the corresponding region of the workpiece surface is increased, respectively. The carrier gas sprayed by the second gas inlet structure 5 can press down at least part of the reaction gas sprayed by the first gas inlet structure 4. When the satellite disk 31 rotates around the center axis of the satellite disk 31, the film growth rate of the region of the workpiece corresponding to any of the carrier gas outlets 52 can be reduced by increasing the gas flow of the carrier gas outlet 52. The film growth rate of the region of the workpiece corresponding to any of the carrier gas outlets 52 can be increased by reducing the gas flow of the carrier gas outlet 52. It can be understood that the lengths of the plurality of continuous line segments are not limited. As an example, the radius of 9 cm can be divided into three line segments of 3 cm each. As another example, referring to FIG. 12, the radius of 11 cm can be divided into a 2 cm line segment, a 2 cm line segment, a 3 cm line segment, and a 4 cm line segment from inside to outside. The coverage area of the gas flow sprayed by the corresponding carrier gas outlet 52 also needs to be adjusted, so that the gas flow sprayed by each carrier gas outlet 52 can cover the concentric region formed by rotating one line segment around the center of the workpiece.

[0078] In one embodiment, the main channels 53 are arranged in a ring, and each carrier gas outlet 52 includes at least two main channels 53, which are symmetrically arranged about the center axis of rotation of the base 3.

[0079] Referring to FIG. 9 and FIG. 10, a plurality of main channels 53 are evenly distributed around the concentric circle of the rotation center axis of the base 3, i.e. a plurality of main channels 53 are distributed at different radii, for example, 4 first main channels 531 are arranged along the circumference at a radius of 100 mm, 4 second main channels 532 are arranged along the circumference at a radius of 200 mm, and 4 third main channels 533 are arranged along the circumference at a radius of 300 mm. It can be understood that the radius size and the number of circumferential main channels 53 at the same radius are not limited. Further, the main channels 53 are connected with secondary channels 54 below, and further, each main channel 53 is connected with a plurality of secondary channels 54. In some embodiments, a communication cavity 55 is arranged between the main channels 53 and the secondary channels 54, and the main channels 53 and the secondary channels 54 respectively communicate with the communication cavity 55 from the upper and lower directions. Optionally, a plurality of main channels 53 can be distributed at equal intervals along the radial direction, and the interval is 10100 mm. It can be understood that each carrier gas output 52 is separately connected to an air inlet pipeline 6 (not shown), and the air inlet pipeline 6 is connected with an external gas source. The air inlet pipeline 6 includes a flow controller electrically connected with a controller, and the controller controls the separate air inlet of each carrier gas output 52. In this way, the gas flow field of the specified area can be adjusted, and the uniformity of the film thickness is improved. It can be understood that in some embodiments, the boundary of the second air inlet structure 5 is determined by the secondary channels 54, and the circumscribed circle of the outermost circle of the secondary channels 54 is the boundary of the second air inlet structure 5, i.e. the outer boundary of the vertical projection 56 of the second air inlet structure 5. In some embodiments, the boundary of the second air inlet structure 5 is determined by the structure in which the top gas outlet hole 51 is arranged, and the outermost contour of the structure in which the top gas outlet hole 51 is arranged is the boundary of the second air inlet structure 5.

[0080] The communication cavity 55 is annularly arranged, and in some embodiments, a plurality of secondary channels 54 are arranged at intervals below the communication cavity 55, and each circle of secondary channels 54 is arranged along a plurality of evenly distributed radial directions and radiates outward. In this way, the gas flow of the second air inlet structure 5 is more dispersed, and the uniformity of the reaction gas is better by pressing the reaction gas downward.

[0081] In one embodiment, the secondary channels 54 are distributed in multiple zones, as shown in FIGS. 9 and 10, the secondary channels 54 are distributed in three zones, each zone is an annular zone, multiple secondary channels 54 are distributed in each annular zone, and the radial distance between adjacent secondary channels 54 in each annular zone is smaller than the radial distance between adjacent secondary channels 54 in different annular zones. In this way, when adjusting the gas flow of the carrier gas output 52, the mutual influence of the gas flow in different annular zones can be minimized, so that the gas flow field of the desired adjustment zone can be effectively adjusted, thereby ensuring the uniformity of the overall zone gas flow field. It can be understood that the radial distance can be selected as 1-20 mm, and the annular zones can be 2, 4, 5, etc. without limitation.

[0082] The gas outlet of the secondary channel 54 is the top gas outlet hole 51, and the directions of the primary channel 53 and the secondary channel 54 can be changed as needed, which are vertical in the present embodiment.

[0083] In one embodiment, the second gas inlet structure 5 is arranged obliquely above the satellite disc 31, that is, in the horizontal direction, the second gas inlet structure 5 is arranged at a position between the first gas inlet structure 4 and the satellite disc 31, so that the gas flow angle can be better controlled, and the gas flow can be more easily blown to the wafer 32.

[0084] In some embodiments, as shown in FIG. 3, the first gas inlet structure 4 is arranged at the center of the reaction chamber 2, the satellite disc 31 is arranged around the first gas inlet structure 4, the gas flow of the first gas inlet structure 4 is horizontally injected toward the satellite disc 31, and a gap is left between the susceptor 3 and the side wall 21, which serves as an exhaust channel. The exhaust channel is in communication with an exhaust pump, and the exhaust pump is electrically connected to a controller. The exhaust pump can extract part of the reaction products and unreacted gas from the exhaust channel together out of the reaction chamber 2.

[0085] In one embodiment, the gas flow rate / flow of the first gas inlet structure 4 and the second gas inlet structure 5 can be adjusted, so that the shape of the parabola can be changed, so that the reaction gas can be better deposited on the surface of the wafer 32 after reaction. It should be noted that the first gas inlet structure 4 and the second gas inlet structure 5 each have the ability to independently control the internal flow. Although not shown, multiple flow controllers are arranged in fluid communication with the first gas inlet channel 42 and the carrier gas output 52 to independently adjust the flow and flow rate in the corresponding gas inlet channel. It can be understood that a gas pipeline can be arranged in communication with the gas inlet of each gas inlet channel to deliver gas into each gas inlet channel, and the gas is introduced into the reaction chamber 2 through the gas outlet of the gas inlet channel.

[0086] Please refer to FIG. 3 and FIG. 13, the gas flowing into the reaction chamber 2 from the first gas inlet structure 4 is divided into two segments of trajectories, the first segment of the gas flow is a straight trajectory slightly downward along the direction of the ejection, and the second segment of the gas flow is pressed downward and dispersed after meeting the carrier gas flowing into the reaction chamber 2 from the second gas inlet structure 5, because of the impact of the downward pressing, the trajectory of the second segment is more downward than the trajectory of the first segment, generally a parabola, and is dispersed into smaller gas flow, so that the thin film deposition uniformity is better. But after the dispersion, the deposition of the reactants on the wafer surface will be affected, and the thin film growth rate will be reduced. Because the concentration of the reaction gas ejected from the first gas inlet structure 4 gradually decreases along the forward direction with the continuous chemical reaction, the thin film growth rate of the wafer on the side closest to the first gas inlet structure 4 is the highest, and the farther away from the first gas inlet structure 4, the lower the thin film growth rate of the wafer. At the same time, because the satellite disc 31 rotates with the wafer, the area of the wafer closest to the first gas inlet structure 4 will be repeatedly deposited with more reactants after the reaction of the reaction gas, and the area far away from the first gas inlet structure 4 will be repeatedly deposited with less reactants or even no reactants, so that the thin film growth on the wafer is very uneven. The second gas inlet structure 5 of the reaction chamber 100 of the present application can press down the reaction gas ejected from the first gas inlet structure 4, at least partially disperse the gas flow of the reaction gas, and the reactants flowing to the wafer surface are more uniform, so that the thin film growth rate of each area on the wafer is more uniform. By using the carrier gas to press down and disperse the reaction gas, on the one hand, the normal reaction of the reaction gas in the preset proportion will not be damaged; on the other hand, if the uniformity is adjusted by the reaction gas, it involves a series of chemical reactions and control of the flow field, and the adjustment method is very complex. Compared with the scheme of adjusting by the reaction gas, the scheme of adjusting by the carrier gas can save the amount of reaction gas, will not waste the reaction gas, and at the same time, by increasing the gas output member 52 above, the adjustment method can be simplified, and the difficulty of thin film uniformity adjustment can be greatly reduced.

[0087] It should be noted that although the carrier gas of the second gas inlet structure 5 can press down the reaction gas ejected from the first gas inlet structure 4, part of the reaction gas will flow through the gap of the carrier gas ejected from the second gas inlet structure 5, that is, this part of the gas flow is not impacted by the downward gas flow, but is naturally reacted and deposited, or is directly extracted out of the reaction chamber 2 without reaction.

[0088] Please refer to FIG. 2 and FIG. 10, in an embodiment, the secondary channel 54 is the top gas outlet 51, the central axis of the top gas outlet 51 is coplanar with the central axis of the first gas outlet 41, and the included angle of the two central axes after intersection is α, so that the carrier gas b sprayed from the top gas outlet 51 can press down and blow the reaction gas a sprayed from the first gas outlet 41 to the workpiece to be processed. By making the central axis of the top gas outlet 51 coplanar with the central axis of the first gas outlet 41, and the included angle of the two central axes after intersection is α, 30°≤α≤150°, the gas flow sprayed from the second gas inlet structure 5 can be more accurately blown at the center position of the gas flow sprayed from the first gas inlet structure 4, the efficiency is higher, and the pressing down effect is better.

[0089] When the gas is sprayed from the first gas inlet structure 4 or the second gas inlet structure 5, it will spread to all directions along the forward direction, and as the spraying distance of the gas increases, a gas flow with a wider and wider cross section will be formed, the edges of the gas flow in the same direction will contact each other, and finally a continuous gas curtain will be formed. At this time, the central axis of the top gas outlet 51 does not need to be coplanar with the central axis of the first gas outlet 41, and the gas flow b sprayed from the second gas inlet structure 5 can also press down the gas flow a sprayed from the first gas inlet structure 4 and make the gas flow a sprayed from the first gas inlet structure 4 blow to the satellite disc 31 in a parabolic shape. It should be noted that the uniformity of the horizontal gas flow field is insufficient, the film thickness is uneven, and particles are easily generated on the upper cover 1. Compared with horizontal gas inlet, vertical gas inlet can improve the uniformity of horizontal gas inlet and reduce the problem of particle generation, but the gas utilization rate is low and the film forming is slow, which greatly hinders the production efficiency. By pressing down the reaction gas by the carrier gas, the reaction gas as a whole blows to the satellite disc 31 in a parabolic shape. Compared with vertical gas inlet, the problem of particle falling is further solved, and the film forming efficiency is high and the gas flow field is more uniform.

[0090] In order to further press down the gas flow sprayed from the first gas inlet structure 4 and blow it to the satellite disc 31, in an embodiment, the second gas inlet structure 5 includes a plurality of carrier gas output members 52 arranged along the radial direction of the upper cover 1, each carrier gas output member 52 is connected with at least one gas inlet pipeline 6, and the gas inlet can be controlled individually. The reaction gas flow sprayed from the first gas inlet structure 4 is blown downward by the carrier gas flow sprayed from the plurality of carrier gas output members 52 from above. Such arrangement can make the reaction gas flow more uniform on the one hand, and can facilitate the adjustment of the gas flow in different carrier gas output members 52 by segmentation to improve the film thickness uniformity.

[0091] Referring to FIG. 3 and FIG. 14, in one embodiment, the second gas inlet structure 5 is located above the workpiece, the vertical projection 56 of the second gas inlet structure 5 has a width equal to the radius of the workpiece, and the vertical projection 56 covers the path from the edge of the workpiece to the center of the workpiece along the width direction of the vertical projection 56. This arrangement concentrates the gas flow to the reaction gas above the wafer radius width close to the rotation center axis of the susceptor 3, which is more efficient than setting it in other positions, and can very efficiently affect the film growth rate with the least change in carrier gas amount. At the same time, because the wafer is constantly rotating, it will not affect the film deposition in each area of the wafer.

[0092] Further, the carrier gas output 52 of the reaction chamber 100 is the same as the number of regions of the workpiece and one-to-one correspondence, and each carrier gas output 52 is located directly above the corresponding region of the workpiece.

[0093] In some embodiments, referring to FIG. 3, the workpiece is sequentially divided into n regions from the edge to the center along the radial direction, where the ith region is a circular ring, the nth region is a circle, 1≤i≤n-1, i, n are natural numbers, and n≥2; the carrier gas output 52 includes N and is sequentially arranged from inside to outside, the first carrier gas output 52 corresponds to the mth region of the reaction gas, where 1≤I≤N, N=n, m=I, N, m, I are natural numbers. When the satellite disk 31 rotates around the rotation center axis of the satellite disk 31, the film growth rate of the mth region of the workpiece corresponding to the carrier gas output 52 can be reduced by increasing the gas flow of the first carrier gas output 52. Reducing the gas flow of the first carrier gas output 52 can increase the film growth rate of the mth region of the workpiece corresponding to the carrier gas output 52.

[0094] It should be noted that each carrier gas output 52 includes a circle of top gas outlet holes 51, and the sequential arrangement of the N carrier gas outputs from inside to outside means the sequential arrangement of the circles of top gas outlet holes 51 from inside to outside. And one carrier gas output 52 corresponds to one region of the wafer. The following embodiments are also arranged in this way.

[0095] In one embodiment, referring to FIG. 15, the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the radius of the workpiece, the vertical projection 56 covers a partial area of the workpiece, the length of the area along the width direction of the vertical projection 56 is less than the radius of the workpiece, the top gas outlet holes 51 are parallel to each other, and the carrier gas sprayed by the top gas outlet holes 51 is directed towards the satellite disk 31 and located on the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0096] In one embodiment, referring to FIG. 16, the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the radius of the workpiece, the vertical projection 56 covers the workpiece, the top gas outlet holes 51 are parallel to each other, and the gas flow sprayed by the top gas outlet holes 51 is directed towards the satellite disk 31 and located on the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0097] In one embodiment, referring to FIG. 17 and FIG. 18, the width of the vertical projection 56 of the second gas inlet structure 5 is less than the radius of the workpiece, the vertical projection 56 covers the workpiece, the plurality of carrier gas output members 52 are arranged in a gradually diverging manner from the center to both ends, the gas flow sprayed by the carrier gas output members 52 is divergingly blown towards the satellite disk 31, and the width of the gas flow when falling on the workpiece is equal to the radius of the workpiece and located on the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0098] In one embodiment, referring to FIG. 19 and FIG. 20, the width of the vertical projection 56 of the second gas inlet structure 5 is greater than the radius of the workpiece, the vertical projection 56 covers the workpiece, the plurality of carrier gas output members 52 are arranged in a gradually converging manner from both ends to the center, the gas flow sprayed by the carrier gas output members 52 is convergingly blown towards the satellite disk 31, and the width of the gas flow when falling on the workpiece is equal to the radius of the workpiece and located on the side close to the first gas inlet structure 4 along the width direction of the vertical projection 56.

[0099] In one embodiment, the second gas inlet structure 5 is located above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is equal to the diameter of the workpiece, and the vertical projection 56 covers the workpiece along the width direction of the vertical projection 56.

[0100] It should be noted that each of the areas can correspond to not only one carrier gas output member 52, but also a plurality of carrier gas output members 52. This will be illustrated in the following embodiments.

[0101] When the number of the carrier gas output members 52 is even, the workpiece is divided into n regions in turn from the edge to the center in the radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output members 52 include 2M and are arranged in turn from the inside to the outside, the P-th carrier gas output member 52 and the 2M+1-P-th carrier gas output member 52 correspond to the m-th region, wherein 1≤P≤2M, M=n, M, m and P are natural numbers, when 1≤P≤M, m=P, and when M

[0102] When the number of the carrier gas output members 52 is odd, in one embodiment, the workpiece is divided into n regions in turn from the edge to the center in the radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output members 52 include 2Q-1 and are arranged in turn from the inside to the outside, the R-th carrier gas output member 52 and the 2Q-R-th carrier gas output member 52 correspond to the m-th region, wherein 1≤R≤2Q-1, Q=n, Q, m and R are natural numbers, when 1≤R≤Q, m=R, and when Q

[0103] By adjusting one region by two carrier gas output members 52 at the same time, on the one hand, the adjustment efficiency can be improved, and on the other hand, the adjustment method is more diverse. For example, one of the two carrier gas output members 52 performs large-scale adjustment of the flow rate, and the other performs small-scale adjustment. By using different scales in cooperation, the adjustment effect can be more fine, the result can be more accurate, and the uniformity can be better.

[0104] The vertical projection 56 of the second gas inlet structure 5 is away from the first gas inlet structure 4. In addition to this arrangement, the vertical projection 56 of the second gas inlet structure 5 can also be in contact with the first gas inlet structure 4. Specifically, in some embodiments, the second gas inlet structure 5 is above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is greater than or equal to 1.5 times the diameter of the workpiece, and the vertical projection 56 covers the area from the edge of the first gas inlet structure 4 to the center of the workpiece along the width direction of the vertical projection 56.

[0105] In some embodiments, the second gas inlet structure 5 is above the workpiece, the width of the vertical projection 56 of the second gas inlet structure 5 is greater than or equal to 1.5 times the diameter of the workpiece, and the vertical projection 56 covers the area from the edge of the first gas inlet structure 4 to the edge of the workpiece farthest from the first gas inlet structure 4.

[0106] By arranging the second gas inlet structure 5 to be larger, the flow rate of the carrier gas can be adjusted in a larger range, facilitating control of the film growth rate in different regions of the wafer.

[0107] The multi-wafer planetary epitaxy apparatus has a controller (not shown) which can be one of any form of general- purpose computer processor that can be used in an industrial setting for controlling various chambers and that is used in the sub-processors. Support circuits coupled to the CPU for supporting the processor in a conventional manner are also included in the controller. These circuits include cache, power supplies, clock circuits, input / output circuits and the like. One or more processes can be stored in the memory as software routines that can be executed by, or called by, the CPU. Software routines can also be stored and / or executed by a second CPU (not shown) that is located remotely from the CPU that is controlled by the controller. The controller can include one or more configurations that can include any command or function to control flow rates, gas valves, gas sources, rotation, movement, heating, cooling, or other processes that perform various configurations, such as can control the movement, rotation, gripping, releasing, etc. of a robotic arm. The controller can be coupled to various components of the multi-wafer planetary epitaxy apparatus to control the operation thereof, for example, the controller can control the gas flow on / off, flow rate, flow volume, etc. in the first gas inlet structure 4 and the second gas inlet structure 5, in particular, the gas flow on / off, flow rate, flow volume, etc. of each gas inlet pipe 6 that is in communication with the first gas inlet channel 42 of the first gas inlet structure 4. The gas flow on / off, flow rate, flow volume, etc. of each carrier gas output 52 of the second gas inlet structure 5 can also be controlled. It is noted that the multi-wafer planetary epitaxy apparatus includes a plurality of gas inlet pipes 6, one gas inlet pipe 6 is in communication with one first gas inlet channel 42 or carrier gas output 52, the gas inlet pipe 6 is provided with a flow controller, the controller is electrically connected with the flow controller to control the gas flow on / off, flow rate, flow volume, etc. of the gas inlet pipe 6, so that the gas inlet of each first gas inlet channel 42 and each carrier gas output 52 can be controlled by controlling the gas inlet pipe 6. In some embodiments, the controller includes a central processing unit (CPU), a memory and support circuits, and optionally, the controller is a single-chip microcomputer.

[0108] By controlling the carrier gas output 52 to individually and separately inlet gas, the uniformity of the gas flow can be controlled. The thin film growth rate of each region of the wafer surface can be made to tend to be the same.

[0109] The conventional epitaxial equipment sets two directions of gas inlet, one of which is horizontal and the other is vertical, in order to mix the two kinds of reaction gases in two directions, so that the reaction gas mixture is more uniform, thereby making the thin film growth more uniform, but not only will destroy the predetermined proportion of the reaction of the two kinds of reaction gases, but also cannot be targeted to adjust the growth of each area of the wafer, and the reaction gas of the present application is sprayed from the first gas inlet structure, and the second gas inlet structure in the other direction only sprays carrier gas, which is distributed more uniformly by colliding with the reaction gas to disperse the reaction gas, and the second gas inlet structure includes a plurality of independent carrier gas output members 52, each wafer corresponds to one or more carrier gas output members 52, so that the gas flow of each carrier gas output member 52 can be adjusted to adjust the thin film growth rate of each area of the wafer surface, thereby controlling the uniformity of the wafer surface to a very high level.

[0110] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0111] In addition, the terms "first", "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise specifically defined.

[0112] In the present application, unless otherwise specifically defined and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be broadly understood, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be directly connected, or can be indirectly connected through an intermediate medium; can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0113] In this application, unless otherwise explicitly specified and limited, a first feature "on" or "under" a second feature can mean that the first and second features are in direct contact, or that the first and second features are in indirect contact with an intervening medium. Also, a first feature "over", "above", and "on top of" a second feature can mean that the first feature is directly above or obliquely above the second feature, or that the first feature is merely horizontally higher than the second feature. A first feature "under", "below", and "underneath" a second feature can mean that the first feature is directly below or obliquely below the second feature, or that the first feature is merely horizontally lower than the second feature.

[0114] In the description of the application, the description of the terms "one embodiment", "some embodiments", "an example", "a specific example", or "some examples" etc. means that the particular feature, structure, material or characteristic being described is included in at least one embodiment or example of the application. The illustrative appearance of the above terms in various places in the specification are not necessarily referring to the same embodiment or example. Moreover, the particular features, structures, materials, or characteristics can be combined in any suitable manner in one or more embodiments or examples. Furthermore, the description of different embodiments or examples of the application in the specification can be combined and combined in any suitable manner without departing from the scope of the application.

[0115] Although the embodiments of the present application have been shown and described, it would be appreciated by those skilled in the art that changes, modifications, alternatives, and variations to the embodiments can be made without departing from the principles and spirit of the application, and that the scope of the application is defined by the claims and their equivalents.

Claims

1. A reaction chamber for an epitaxial process, wherein, The utility model relates to a reaction chamber for thin film growth, comprising: a reaction chamber; a top cover arranged on the top of the reaction chamber; a base rotatably arranged in the reaction chamber and parallelly and spacedly arranged with the top cover; a plurality of satellite disks circumferentially arranged on the base and used for carrying workpieces to be processed, the base can rotate with the satellite disks around a rotation center axis of the base, and the satellite disks can rotate around a rotation center axis of the satellite disks; wherein the top cover is provided with a first gas inlet structure and a second gas inlet structure, the first gas inlet structure extends into the reaction chamber and extends along the rotation center axis of the base by a preset distance, and can spray reaction gas into the surrounding reaction chamber; the second gas inlet structure is arranged around the first gas inlet structure and comprises a plurality of carrier gas output members which can independently inlet carrier gas and are used for spraying carrier gas; any radius of the surface of the workpiece to be processed is divided into a plurality of continuous line segments, each line segment forms a plurality of adjacent and non-overlapping concentric regions by rotating around the center of the workpiece to be processed, and each region corresponds to one or more carrier gas output members; the carrier gas sprayed by the second gas inlet structure can press down at least part of the reaction gas sprayed by the first gas inlet structure, and by adjusting the carrier gas flow of any carrier gas output member, the film growth rate of the region of the workpiece to be processed corresponding to the carrier gas output member can be changed when the satellite disks rotate around the rotation center axis of the satellite disks.

2. The epitaxial process reaction chamber of claim 1, wherein, The second gas inlet structure comprises a plurality of top gas outlets opened on the bottom surface of the top cover towards the reaction chamber and used for spraying carrier gas, the top gas outlets are uniformly arranged on a plurality of concentric circles distributed outward from the rotation center axis of the base, and each carrier gas output member comprises the top gas outlets on one or more adjacent concentric circles.

3. The reaction chamber for epitaxial processes of claim 1, wherein, The number of top gas outlets on each concentric circle is the same, and the top gas outlets are radially distributed along a plurality of uniformly distributed radial directions.

4. The epitaxial process reaction chamber of claim 1, wherein, Each carrier gas output member comprises at least two main channels symmetrically arranged about the rotation center axis of the base.

5. An epitaxial process reaction chamber as claimed in claim 4, wherein, The carrier gas output member further comprises a secondary channel and a communication cavity arranged between the main channel and the secondary channel, and the main channel and the secondary channel respectively communicate with the communication cavity from the top and bottom directions.

6. The epitaxial process reaction chamber of claim 1, wherein, The second gas inlet structure is located above the workpiece to be processed, the width of the vertical projection of the second gas inlet structure is equal to the radius of the workpiece to be processed, and the vertical projection covers the path from the edge of the workpiece to be processed to the center of the workpiece to be processed along the width direction of the vertical projection.

7. An epitaxial process reaction chamber as claimed in claim 6, wherein, The number of carrier gas output members is equal to and corresponds to the number of regions of the workpiece to be processed, and each carrier gas output member is located directly above the corresponding region of the workpiece to be processed.

8. The epitaxial process reaction chamber of claim 6, wherein, The to-be-processed piece is sequentially divided into n regions from the edge to the center in a radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output piece includes N and is sequentially arranged from the inside to the outside, the I-th carrier gas output piece corresponds to the m-th region, wherein 1≤I≤N, N=n, m=I, N, m and I are natural numbers.

9. The epitaxial process reaction chamber of claim 6, wherein, The to-be-processed piece is sequentially divided into n regions from the edge to the center in a radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output piece includes 2M and is sequentially arranged from the inside to the outside, the P-th carrier gas output piece and the 2M+1-P-th carrier gas output piece correspond to the m-th region, wherein 1≤P≤2M, M=n, M, m and P are natural numbers, when 1≤P≤M, m=P, and when M 10. The epitaxial process reaction chamber of claim 6, wherein, The to-be-processed piece is sequentially divided into n regions from the edge to the center in a radial direction, wherein the i-th region is a circular ring, the n-th region is a circle, 1≤i≤n-1, i and n are natural numbers, and n≥2; the carrier gas output piece includes 2Q-1 and is sequentially arranged from the inside to the outside, the R-th carrier gas output piece and the 2Q-R-th carrier gas output piece correspond to the m-th region, wherein 1≤R≤2Q-1, Q=n, Q, m and R are natural numbers, when 1≤R≤Q, m=R, and when Q 11. The epitaxial process reaction chamber of claim 1, wherein, The first gas inlet structure is a multi-layer sleeve, and the first gas inlet structure includes a plurality of first gas inlet channels, the first gas inlet channels include vertical channels and horizontal channels which are in communication with each other, wherein a plurality of vertical channels are coaxially arranged in a radial direction around a central axis of the first gas inlet structure, the vertical channels are arranged in the upper cover, and the horizontal channels are away from the upper cover and extend into the reaction cavity.

12. A multi-wafer planetary epitaxial apparatus, wherein, The reaction chamber comprises an epitaxial process as claimed in any one of claims 1 to 11. The reaction chamber comprises an epitaxial process as claimed in any one of claims 1 to 11.

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