Display panel, display screen module and electronic device

Abstract

The present application provides a display panel, a display screen module and an electronic device. A shielding structure may be arranged inside the display panel, and the shielding structure can reduce interference of electromagnetic waves and the like generated by the display panel on electronic components (for example, an antenna) comprised in the electronic device. The electronic device configured with the display panel has high communication performance and good communication quality. In addition, because the shielding structure is arranged inside the display panel, the display screen module comprising the display panel has a smaller thickness, and the space occupied by the display screen module in the electronic device is smaller, thus achieving higher space utilization efficiency in the electronic device.

Description

Display panel, display screen module and electronic device

[0001] The present application claims priority to the Chinese patent application No. 202411391153.3, filed on September 30, 2024, and entitled "Display panel, display screen module and electronic device", the whole content of which is incorporated herein by reference. TECHNICAL FIELD

[0002] The present application relates to the field of terminal device hardware, in particular, to a display panel, a display screen module and an electronic device. BACKGROUND

[0003] Electronic devices such as mobile phones, tablets, smart watches, smart glasses, etc. generally have the need for communication, for example, a mobile phone can communicate with a base station, and a smart watch can communicate with a mobile phone. A large number of electronic components are generally integrated inside these electronic devices, and the electronic components will generate certain electromagnetic wave signals during power-on. The electromagnetic wave signals generated by different electronic components may interfere with each other, for example, the electromagnetic wave signals generated by the electronic components in the display screen module of the electronic device may interfere with the antenna of the electronic device used for communication.

[0004] How to reduce the adverse effects of the display screen module of the electronic device on the communication function of the electronic device is a problem worth considering. SUMMARY

[0005] The present application provides a display panel, a display screen module and an electronic device, the inside of the display panel is provided with a shielding structure, which can be used to shield the interference of the electromagnetic waves generated in the display screen module on other electronic components (such as antennas) in the electronic device. The stability and reliability of the communication function of the electronic device using the display panel are better.

[0006] In a first aspect, a display panel is provided, comprising: a first substrate, a light-emitting layer, a thin-film transistor layer, an encapsulation layer and a shielding structure, the light-emitting layer and the thin-film transistor layer being located between the first substrate and the encapsulation layer, the thin-film transistor layer being configured to control the light-emitting layer to emit light; and the shielding structure being located between the first substrate and the encapsulation layer.

[0007] In a possible implementation, the display panel can further comprise a cathode, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer and an anode, the first substrate, the thin-film transistor layer, the anode, the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, the electron injection layer and the encapsulation layer can be sequentially stacked in the thickness direction of the display panel.

[0008] In a possible implementation, the first substrate and the encapsulation layer can be rigid structures, such as glass or the like. Alternatively, the first substrate and the encapsulation layer can be flexible structures, such as polyimide film or the like.

[0009] In the technical solution, the shielding structure is arranged in the display panel, which can be used to reduce the interference of electromagnetic waves generated by the display panel on other electronic components (such as an antenna) in the external environment. The electronic device configured with the display panel has strong communication performance and good communication quality. In addition, since the shielding structure is arranged in the display panel, the display screen module containing the display panel is thinner, the display screen module occupies less space in the electronic device, and the space utilization efficiency in the electronic device is higher.

[0010] In combination with the first aspect, in some implementations of the first aspect, the shielding structure includes a first portion extending along a first direction, the first direction being parallel to a plane in which the display panel is located, and the first portion being located between the first substrate and the thin-film transistor layer.

[0011] In some scenarios, the first direction can be understood as a direction perpendicular to the direction in which the plurality of functional layers in the display panel are stacked.

[0012] In a possible implementation, the first portion of the shielding structure can be arranged on a side of the first substrate facing the thin-film transistor layer.

[0013] In the technical solution, the first portion of the shielding structure can be arranged along the first direction. This portion of the shielding structure can reduce the probability of electromagnetic waves in the display panel propagating through the first substrate to the environment along the thickness direction of the display panel. In this way, electronic components in the space on the side of the first substrate away from the encapsulation layer are less disturbed by the display panel.

[0014] In combination with the first aspect, in some implementations of the first aspect, the shielding structure includes a second portion extending along a first direction, the first direction being parallel to a plane in which the display panel is located, and the thin-film transistor layer including a plurality of thin-film transistors, each thin-film transistor including a second substrate and a buffer layer, and the second portion being located between the second substrate and the buffer layer.

[0015] In the technical solution, the second portion of the shielding structure can be arranged in the thin-film transistor layer of the display panel. The shielding structure can be arranged between the substrate and the buffer layer of each thin-film transistor. In other words, the technical solution improves the structure of the thin-film transistor to reduce the interference of electromagnetic waves generated by the display panel on external electronic components. In this technical solution, the shielding structure is more consistent with the position where electromagnetic waves are generated, and the display panel of this structure has less electromagnetic interference on external electronic components.

[0016] With reference to the first aspect, in some implementations of the first aspect, the shielding structure includes a third portion extending along a second direction perpendicular to a plane in which the display panel is located, and the third portion is located at an outer periphery of the light-emitting layer and the thin-film transistor layer.

[0017] In some scenarios, the second direction can also be understood as a thickness direction of the display panel. Here, the third portion extending along the second direction can be understood as the third portion extending in the same direction as the second direction, or the third portion extending at an angle with the second direction.

[0018] In a possible implementation, the first substrate and the encapsulation layer can be rigid structures, in which case the third portion can be located between the encapsulation layer and the first substrate, or in other words, one end of the third portion close to the encapsulation layer is connected to a side of the encapsulation layer facing the first substrate, and the other end of the third portion close to the first substrate is connected to a side of the first substrate facing the encapsulation layer.

[0019] In a possible implementation, the first substrate and the encapsulation layer can be flexible structures, in which case the third portion can be wrapped around the outer periphery of the encapsulation layer.

[0020] In a possible implementation, the third portion can be used to fix the relative positions of the first substrate and the encapsulation layer.

[0021] In the technical solution, the shielding structure can further include a third portion arranged substantially along a thickness direction of the display panel, and the third portion can reduce the probability of electromagnetic waves generated by the display panel propagating to the environment along a circumferential direction of the display panel, thereby helping to reduce the interference of the display panel with external electronic components located in the circumferential direction of the display panel.

[0022] With reference to the first aspect, in some implementations of the first aspect, the substrate is a rigid structure, and the third portion includes a connecting wall used to laser fuse and connect the encapsulation layer and the first substrate.

[0023] In some scenarios, the connecting wall can also be referred to as a Frit structure.

[0024] In a possible implementation, the connecting wall can include a conductive material.

[0025] With reference to the first aspect, in some implementations of the first aspect, the second portion further includes an adhesive portion located outside the connecting wall.

[0026] In a possible implementation, the adhesive portion can be composed of a conductive material.

[0027] In a possible implementation, the conductive material in the connecting wall can be in contact with the conductive material in the adhesive portion.

[0028] In the technical solution, the connecting wall and / or the bonding part are used as part of the shielding structure, which can realize multiplexing of the functional structure in the display panel, reduce the interference of the display panel on the external electronic components, and reduce the space occupation of the shielding structure in the display panel, thereby reducing the adverse effect of the shielding structure on the volume of the display panel. The shielding effects of the connecting wall and the bonding part on electromagnetic waves can complement each other, and the interference of the display panel on the external electronic components is smaller.

[0029] With reference to the first aspect, in some implementations of the first aspect, the display panel further includes a touch layer, the touch layer is located between the encapsulation layer and the first substrate, the touch layer is in contact with the encapsulation layer, and the one end of the connecting wall close to the encapsulation layer is in contact with the touch layer.

[0030] In a possible implementation, the conductive material in the connecting wall can be in contact with the conductive material contained in the touch layer.

[0031] In the technical solution, the connecting wall is in contact with the touch layer, and the connecting wall and the touch layer can form a structure similar to a shielding cover, thereby improving the shielding effect of the shielding structure on the electromagnetic waves in the display panel.

[0032] With reference to the first aspect, in some implementations of the first aspect, the display panel further includes a pixel definition layer and a groove, the pixel definition layer is located between the light-emitting layer and the thin film transistor layer, the groove is located at the outer periphery of the pixel definition layer, and the shielding structure is at least partially located in the groove.

[0033] In a possible implementation, the pixel definition layer is arranged in a spaced manner with a frame in the display panel, and the above-mentioned groove can be formed between the outer wall of the pixel definition layer and the inner wall of the frame.

[0034] The technical solution sets the shielding structure in the gap between the components of the display panel, which reduces the probability of the electromagnetic waves generated in the display panel propagating along the circumference of the display panel to the environment, and improves the utilization efficiency of the space in the display panel.

[0035] With reference to the first aspect, in some implementations of the first aspect, the groove includes a first sub-groove and a second sub-groove, the first sub-groove and the second sub-groove are arranged in a spaced manner, the second sub-groove is located at the outer periphery of the first sub-groove, and the shielding structure is at least partially located in the second sub-groove.

[0036] In a possible implementation, a spacing part can be arranged between the first sub-groove and the second sub-groove, and the spacing part can be used to space the two sub-grooves.

[0037] In a possible implementation, a spacing portion and other sub-grooves can be arranged between the first sub-groove and the second sub-groove, and the spacing portion and the other sub-grooves can be used to achieve spacing of the first sub-groove and the second sub-groove.

[0038] In a possible implementation, the first sub-groove can be used to prevent adhesive material in the encapsulation layer from overflowing to unintended areas such as the outside of the frame.

[0039] In the technical solution, the internal space of the groove is divided into multiple sub-grooves, and on this basis, the groove can be used to arrange a shielding structure to reduce interference of electromagnetic waves generated by the display panel on electronic components in the external environment, and the groove can also be used to prevent the material in the display panel from overflowing, thereby improving the structural reliability and functional stability of the display panel.

[0040] With reference to the first aspect, in some implementations of the first aspect, the shielding structure is at least partially located on an inner wall surface of the groove, or the shielding structure is at least partially filled in the groove.

[0041] The technical solution provides multiple feasible arrangement methods of the shielding structure in the groove, which is suitable for different manufacturing processes of the display panel and is conducive to improving the feasibility of arranging the shielding structure in the display panel.

[0042] With reference to the first aspect, in some implementations of the first aspect, the shielding structure includes a layer of conductive material and a layer of insulating material, and the layer of conductive material and the layer of insulating material are alternately stacked.

[0043] In the technical solution, the layer of conductive material and the layer of insulating material are alternately stacked, so that the shielding structure has better absorption effect on the electromagnetic waves generated in the display panel and has stronger shielding performance on the electromagnetic waves.

[0044] With reference to the first aspect, in some implementations of the first aspect, the thin-film transistor layer includes a low-temperature polysilicon thin-film transistor and / or a low-temperature polycrystalline oxide thin-film transistor.

[0045] Secondly, a display screen module is provided, including: a cover plate, a polarizer, and the display panel in the first aspect and any possible implementation manner thereof, and the polarizer is located between the cover plate and the display panel.

[0046] With reference to the second aspect, in some implementations of the second aspect, the display screen module further includes a shielding cover, the shielding cover is located on a side of the display panel away from the cover plate, and the shielding cover covers the outer periphery of the display panel.

[0047] In a possible implementation, the shielding cover can be composed of a conductive material.

[0048] The shielding cover is arranged on the outer peripheral cover of the display panel, and interference of electromagnetic waves generated by the display panel on external electronic components can be reduced.

[0049] In a third aspect, an electronic device is provided, comprising: a circuit board assembly and the display module in the second aspect and any possible implementation manner thereof, and the circuit board assembly is electrically connected with the display module. BRIEF DESCRIPTION OF DRAWINGS

[0050] Fig. 1 is a structural schematic diagram of an electronic device provided by an embodiment of the present application.

[0051] Fig. 2 is a structural schematic diagram of a display module provided by an embodiment of the present application.

[0052] Fig. 3 is a structural schematic diagram of a display panel provided by an embodiment of the present application.

[0053] Fig. 4 is a structural schematic diagram of a component of a display panel provided by an embodiment of the present application.

[0054] Fig. 5 is a structural schematic diagram of another component of a display panel provided by an embodiment of the present application.

[0055] Fig. 6 is a structural schematic diagram of another component of a display panel provided by an embodiment of the present application.

[0056] Fig. 7 is a structural schematic diagram of another display panel provided by an embodiment of the present application.

[0057] Fig. 8 is a structural schematic diagram of another display panel provided by an embodiment of the present application.

[0058] Fig. 9 is a structural schematic diagram of another display panel provided by an embodiment of the present application.

[0059] Fig. 10 is a structural schematic diagram of another display panel provided by an embodiment of the present application.

[0060] Fig. 11 is a structural schematic diagram of another display panel provided by an embodiment of the present application.

[0061] Fig. 12 is a structural schematic diagram of a component of another display panel provided by an embodiment of the present application.

[0062] Fig. 13 is a schematic diagram of a shielding structure provided by an embodiment of the present application.

[0063] Fig. 14 is a schematic diagram of another shielding structure provided by an embodiment of the present application.

[0064] Fig. 15 is a schematic diagram of another shielding structure provided by an embodiment of the present application.

[0065] Fig. 16 is a schematic diagram of another shielding structure provided by an embodiment of the present application.

[0066] Figure 17 is a schematic diagram of another component of a display panel provided in an embodiment of this application.

[0067] Figure 18 is a schematic diagram of the structure of another display panel provided in an embodiment of this application.

[0068] Figure 19 is a schematic diagram of a thin-film transistor provided in an embodiment of this application.

[0069] Figure 20 is a schematic diagram of another thin-film transistor structure provided in an embodiment of this application.

[0070] Figure 21 is a schematic diagram of the structure of another display panel provided in an embodiment of this application.

[0071] Figure 22 is a schematic diagram of the structure of another electronic device provided in an embodiment of this application. Detailed Implementation

[0072] The embodiments of this application are described in detail below, and examples of these embodiments are illustrated in the accompanying drawings. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0073] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. In the description of this application, it should be understood that the terms “center,” “longitudinal,” “lateral,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “top,” “bottom,” “inner,” and “outer,” etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0074] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0075] FIG. 1 shows a schematic diagram of an electronic device 10 according to an embodiment of the present application. The electronic device 10 can include a display module 20, a housing 30, a battery assembly 32, and a circuit board assembly 35. The display module 20 can be configured to display information such as images and text. The circuit board assembly 35 can include one or more electronic components such as one or more processors, one or more antennas, a mobile communication module, and / or a wireless communication module. The battery assembly 32 can be electrically connected to the display module 20 and the circuit board assembly 35, and configured to supply power to the circuit board assembly 35 and the display module 20.

[0076] In some examples, the display module 20 can be attached to the housing 30, and the display module 20 and the housing 30 can define a receiving space 33. The battery assembly 32 and the circuit board assembly 35 of the electronic device 10 can be accommodated in the receiving space 33. In some examples, the circuit board assembly 35 can be located close to the display module 20, and the battery assembly 32 can be located on a side of the circuit board assembly 35 away from the display module 20, or the battery assembly 32 can be located close to the housing 30, and the circuit board assembly 35 can be located close to the display module 20.

[0077] In some examples, when the display module 20 is powered on, the electronic components in the display module 20 can generate varying currents when operating. The varying currents can interfere with the electronic components on the circuit board assembly 35, for example, the varying currents can generate electromagnetic interference (EMI) to the antenna signals of the antennas on the circuit board assembly 35. The EMI generated by the display module 20 can cause the antenna signals of the electronic device 10 to attenuate, the error code to increase, and / or the communication to be interrupted. To reduce the adverse effects, the display module 100 according to an embodiment of the present application can be configured to include a shielding structure located close to the side of the circuit board assembly 35. The shielding structure can reduce the interference of the display module 100 to other electronic components on the electronic device 10.

[0078] FIG. 2 shows a schematic diagram of the display module 100. In some examples, the display module 100 can include a cover plate 110, a polarizer 120, and a display panel 200. The cover plate 110 and the display panel 200 can be located on opposite sides of the polarizer 120, or the polarizer 120 can be located between the cover plate 110 and the display panel 200.

[0079] In some examples, the cover plate 110 can be used to protect the display module 100 from the external environment, such as dust, water vapor, and physical damage in the environment, etc. In some examples, in order to improve the display effect of the display module 100 and reduce the adverse effects of the cover plate 110 on the display effect of the display module 100, the cover plate 110 can be composed of a material with good transparency.

[0080] For example, the cover plate 110 can be composed of chemically strengthened glass or physically strengthened glass, so that the cover plate 110 has higher impact resistance and wear resistance. For example, the cover plate 110 can also be composed of a thin film material, so that the cover plate 110 can be bent or folded.

[0081] For example, the cover plate 110 can also include one or more functional coatings, such as one or more of an anti-reflection coating, a fingerprint-resistant coating, a hardening coating, or an anti-blue light coating, etc. Among them, the anti-reflection coating can be used to reduce the reflection of ambient light on the surface of the cover plate 110, thereby improving the visibility of the display module 100. The fingerprint-resistant coating can be used to reduce fingerprints and other stains on the surface of the cover plate 110. The hardening coating can be used to increase the hardness of the surface of the cover plate 110 and improve the scratch resistance of the cover plate 110. The anti-blue light coating can be used to absorb part of the blue light emitted by the display panel 200, thereby reducing the harm of blue light to the eyes.

[0082] In some examples, the polarizer 120 can be used to reduce the reflection of ambient light on the surface of the display module 100 and improve the contrast and readability of the display module 100 in strong light environments.

[0083] For example, the polarizer 120 can be composed of one or more layers of thin film material. For example, the polarizer 120 can be composed of polyvinyl alcohol film and / or polyester film. Among them, the polyethylene film can be used to adjust the propagation mode of ambient light on the display module 100, and the polyester film can be used to protect the display module 100.

[0084] In some examples, the display module 100 can also include an adhesive layer 130, which can be located between the polarizer 120 and the cover plate 110. The adhesive layer 130 can be used to fix the relative position between the polarizer 120 and the cover plate 110. For example, one side of the adhesive layer 130 facing the cover plate 110 can be bonded to the cover plate 110, and the other side of the adhesive layer 130 facing the polarizer 120 can be bonded to the polarizer 120, so that the cover plate 110 and the polarizer 120 are relatively fixed.

[0085] In some examples, the display panel 200 can be configured to implement the display function of the display module 100. For example, the display panel 200 can include a display module and a control module, where the display module is configured to display images and / or texts, and the control module is electrically connected to the display module and configured to control the display content and / or display mode of the display module.

[0086] In some examples, the display panel 200 can further include a shielding structure, which can be configured to reduce the interference of the electromagnetic waves generated by the display module 100 to other electronic components in the electronic device 10 (e.g., one or more antennas on the circuit board assembly 35, etc.).

[0087] In some examples, the shielding structure in the display panel 200 can include a portion located in the plane of the display panel 200, which can be configured to prevent the electromagnetic waves generated in the display module 100 from propagating along the thickness direction (direction D2 in FIG. 2) of the display panel 200. For example, the shielding structure can reflect the electromagnetic waves generated in the display module 100 back into the space near the cover plate 110 of the display panel 200, or the shielding structure can absorb the electromagnetic waves generated in the display module 100.

[0088] It should be understood that, in the case where the display module 100 is substantially in the shape of a wafer, the thickness direction of the display panel 200 can also be understood as the axial direction (the direction parallel to the axis OO in the figure) of the display module 100.

[0089] In some examples, the shielding structure in the display panel 200 can include a portion extending substantially along the thickness direction of the display panel 200, which can be configured to prevent the electromagnetic waves generated in the display module 100 from propagating along the direction (direction D1 in FIG. 2) of the plane of the display panel 200. For example, the shielding structure can reflect the electromagnetic waves generated in the display module 100 back into the space near the cover plate 110 of the display panel 200, or the shielding structure can absorb the electromagnetic waves generated in the display module 100.

[0090] Compared with the way of arranging the shielding structure at the outer periphery of the display panel 200, the shielding structure in the present embodiment can be arranged inside the display panel 200, which is beneficial to reducing the thickness of the display module 100, reducing the space occupation of the display module 100 in the electronic device 10, and improving the utilization efficiency of the internal space of the electronic device 10.

[0091] In a possible implementation, to reduce the interference of the display module 100 to the electronic device 10, with reference to FIG.2, the display module 100 can further include a shielding cover 140, which can be located on a side of the display panel 200 away from the cover plate 110. The shielding cover 140 can be arranged close to the display panel 200, for example, in the case of assembling the plurality of components in the display module 100, the shielding cover 140 can cover the outside of the display panel 200. A possible case is that the shielding cover 140 can be a sheet structure, or the shielding cover 140 can be a mesh structure. As a possible implementation, the shielding cover 140 can include a conductive material, for example, the shielding cover 140 can be a copper mesh or a copper foil, etc.

[0092] FIG.3 shows a structural schematic diagram of a display panel 200 provided by an embodiment of the present application.

[0093] In some examples, the display panel 200 can include a substrate 210, an encapsulation layer 220, an emissive layer 230, and a thin film transistor (TFT) layer 240.

[0094] The TFT layer 240 can be arranged close to the substrate 210, the emissive layer 230 can be located on a side of the TFT layer 240 away from the substrate 210, and the encapsulation layer 220 can be located on a side of the emissive layer 230 away from the TFT layer 240. In other words, the encapsulation layer 220 can be arranged opposite to the substrate 210, the emissive layer 230 and the TFT layer 240 can be located between the substrate 210 and the encapsulation layer 220, and the emissive layer 230 can be arranged close to the encapsulation layer 220, and the TFT layer 240 can be arranged close to the substrate 210.

[0095] The substrate 210 can serve as a bearing structure of the display panel 200, and the emissive layer 230 and the TFT layer 240 of the display panel 200 can be carried on the substrate 210.

[0096] In some examples, the substrate 210 can be a rigid substrate. For example, the substrate 210 can be any one of a glass substrate, a quartz substrate, or a ceramic substrate. For example, the glass substrate can be composed of soda-lime glass and / or borosilicate glass. These types of substrates can have good mechanical strength and good thermal stability.

[0097] In some examples, the substrate 210 can be a flexible substrate. Exemplarily, the substrate 210 can be composed of a polymer material, for example, the polymer material herein can include one or more of the following: polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), polyethylene naphthalate (PEN), or cyclo olefin copolymer (COC), etc. These polymer materials can have good optical and mechanical properties.

[0098] In some examples, the substrate 210 can also be composed of the inorganic materials described above for composing the rigid substrate and the polymer materials for composing the flexible substrate, which are not limited in the present application.

[0099] The encapsulation layer 220 can be used to protect the light-emitting materials in the display panel 200 from the invasion of moisture or oxygen in the environment, etc. The encapsulation layer 220 can have a certain mechanical strength, thereby improving the physical properties of the display panel 200 such as scratch resistance and wear resistance to a certain extent.

[0100] In some examples, the encapsulation layer 220 can be composed of inorganic materials such as glass, ceramic, etc., which have good mechanical properties. In this scenario, the encapsulation layer 220 can also be referred to as a rigid encapsulation layer, and the glass, ceramic, etc. materials composing the encapsulation layer 220 can also be referred to as rigid encapsulation materials. Exemplarily, the rigid encapsulation materials can include one or more of the following: inorganic materials, metals, metal oxides, or polymer composites, etc.

[0101] In some examples, the encapsulation layer 220 can be composed of organic materials such as polymers, which can have good flexibility and can bend or deform without being damaged under stress. In this scenario, the encapsulation layer 220 can also be referred to as a flexible encapsulation layer, and the polymer materials composing the encapsulation layer 220 can also be referred to as flexible encapsulation materials. Exemplarily, the flexible encapsulation materials can include one or more of the following: polyimide, polyethylene terephthalate, acrylic resin, or polycarbonate, etc.

[0102] In some examples, the encapsulation layer 220 can also be composed of the inorganic materials and organic materials described above, which are not limited in the present application.

[0103] The light-emitting layer 230 can be composed of light-emitting materials, which will release light when the display panel 200 is powered on.

[0104] In some examples, the light-emitting layer 230 can be composed of a host material and a dopant. Among them, the host material can have good electron and hole transport performance and be used for transporting electrons and holes; the host material can also be used to transfer the energy generated by the recombination of electrons and holes to the dopant to promote light emission. The dopant can be used to accept the energy transferred by the host material and release the energy in the form of light.

[0105] Exemplarily, the above-mentioned host material can include one or more of iridium complexes (for example, Ir(ppy)3), carbazole derivatives, or triazine derivatives, etc. These materials have high highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels, and can effectively transport electrons and holes.

[0106] Exemplarily, the above-mentioned dopant can include a fluorescent dopant and / or a phosphorescent dopant. Among them, the fluorescent dopant can be a fluorescent dye, for example, an anthocyanin compound, a quinoline compound, or an azo dye, etc. The phosphorescent dopant can be a metal complex, for example, an iridium complex or a platinum complex, etc.

[0107] In the case of power-on of the display panel 200, electrons and holes from other layers can meet in the light-emitting layer 230 and form excitons (electron-hole pairs), and in the process of changing the state of the excitons, energy is released. After the released energy is absorbed by the dopant, the dopant can emit light.

[0108] In some examples, the display panel 200 can further include a cathode 261, an electron injection layer (EIL) 262, an electron transport layer (ETL) 263, a hole transport layer (HTL) 264, a hole injection layer (HIL) 265, and an anode 266.

[0109] Exemplarily, referring to FIG. 3, the cathode 261, the electron injection layer 262, and the electron transport layer 263 can be located between the encapsulation layer 220 and the light-emitting layer 230, and the cathode 261 can be arranged close to the encapsulation layer 220, the electron transport layer 263 can be arranged close to the light-emitting layer 230, and the electron injection layer 262 can be located between the cathode 261 and the electron transport layer 263.

[0110] In some examples, the cathode 261 can be electrically connected to a negative pole of an external circuit. The electron injection layer 262 can be used to facilitate the injection of electrons from the cathode 261 to the light-emitting layer 230. Illustratively, the electron injection layer 262 can be composed of one or more of alkali metals (e.g., lithium) and compounds thereof, or alkaline earth metals (e.g., barium) and compounds thereof, etc. The electron transport layer 263 can be used to facilitate the transport of electrons from the cathode to the light-emitting layer. Illustratively, the electron transport layer 263 can be composed of one or more of metal complexes (e.g., iridium complexes, etc.), organic polymers (e.g., poly(3,4-ethylenedioxythiophene), etc.), or inorganic materials (e.g., zinc oxide, titanium oxide, etc.).

[0111] Illustratively, referring to FIG. 3, the hole transport layer 264, the hole injection layer 265, and the anode 266 can be located between the light-emitting layer 230 and the thin-film transistor layer 240, and the anode 266 can be disposed proximate to the thin-film transistor layer 240, the hole transport layer 264 can be disposed proximate to the light-emitting layer 230, and the hole injection layer 265 can be located between the hole transport layer 264 and the anode 266.

[0112] In some examples, the anode 266 can be electrically connected to a positive pole of an external circuit. The hole injection layer 265 can be used to facilitate the injection of holes from the anode 266 to the light-emitting layer 230. Illustratively, the hole injection layer 265 can be composed of one or more of metal oxides (e.g., vanadium oxide, molybdenum oxide, etc.), conductive polymers (e.g., polystyrene sulfonate, polythiophene, etc.), or other materials. The hole transport layer 264 can be used to facilitate the transport of holes from the anode 266 to the light-emitting layer 230. Illustratively, the hole transport layer 264 can be composed of one or more of polymeric materials (e.g., poly(9,9-dioctylfluorene), etc.), small molecule materials (e.g., 4,4',4"-tris(N-carbazolyl)triphenylamine, etc.), or other materials.

[0113] In some examples, the display panel 200 can further include a pixel definition layer (PDL) 250. Referring to FIG. 3, the pixel definition layer 250 can be located between the light-emitting layer 230 and the thin-film transistor layer 240. In some scenarios, the pixel definition layer 250 can also be referred to as a pixel confinement layer 250. The pixel definition layer 250 can be used to define the boundaries of each pixel in the display panel 200, reducing the probability of mutual diffusion of light-emitting materials within different pixel regions.

[0114] Here, the light-emitting material can be understood as a constituent material of the light-emitting layer 230 within the display panel 200. In other words, the pixel definition layer 250 can divide the material constituting the light-emitting layer 230 into multiple non-continuous portions.

[0115] Referring to FIG. 4, diagram 4-1 in FIG. 4 exemplarily provides a top view of a pixel definition layer 250 of a display panel 200, and diagram 4-2 in FIG. 4 exemplarily provides a cross-sectional view AA of the pixel definition layer 250.

[0116] In some examples, the pixel definition layer 250 can be substantially in a grid structure, or in other words, the pixel definition layer 250 can include a plurality of lateral spacing bars 251a and a plurality of longitudinal spacing bars 251b, two adjacent lateral spacing bars 251a are separated from each other, and two adjacent longitudinal spacing bars 251b are separated from each other. The two adjacent lateral spacing bars 251a and the two adjacent longitudinal spacing bars 251b can jointly enclose a rectangular accommodating unit 252, which can be used to accommodate a light-emitting material or the like contained in the display panel 200. The lateral spacing bar 251a and the longitudinal spacing bar 251b can each have a certain height, and the height of the material accommodated in the accommodating unit 252 can be less than the height of the lateral spacing bar 251a or the longitudinal spacing bar 251b, so that the light-emitting material will not overflow outside the accommodating unit 252.

[0117] Referring to FIG. 5, diagram 5-1 in FIG. 5 exemplarily provides a top view of another pixel definition layer 250, and diagram 5-2 in FIG. 5 exemplarily provides a cross-sectional view AA of the pixel definition layer 250.

[0118] Exemplarily, the pixel definition layer 250 can include a plurality of ring-shaped portions 257, which can be arranged in an array. The space enclosed by the ring-shaped portion 257 can serve as an accommodating unit 252, which can be used to accommodate a light-emitting material or the like contained in the display panel 200. As an example, the ring-shaped portion 257 can have a certain height, and the height of the material accommodated in the accommodating unit 252 can be less than the height of the ring-shaped portion 257, so that the light-emitting material will not overflow outside the accommodating unit 252.

[0119] In some scenarios, the ring-shaped portion 257 can also be understood as being composed of two lateral spacing bars and two longitudinal spacing bars.

[0120] In some examples, two adjacent ring-shaped portions 257 can be spaced apart, or in other words, a groove or gap can be provided between two adjacent ring-shaped portions 257, which can to some extent prevent the material located in one accommodating unit 252 from overflowing into another accommodating unit 252.

[0121] Compared with the structure of the pixel definition layer 250 shown in FIG. 5, no groove or gap is arranged between two adjacent accommodation units 252 in the pixel definition layer 250 in FIG. 4. In this case, for the pixel definition layer 250 with the same area, the pixel definition layer 250 in FIG. 4 can contain more accommodation units 252 in the case of the same area of each accommodation unit 252; or the pixel definition layer 250 in FIG. 4 can have a larger area of each accommodation unit 252 in the case of the same number of accommodation units 252. In other words, the pixel definition layer 250 in FIG. 4 has a higher utilization efficiency of the area.

[0122] In some examples, referring to FIG. 4 or FIG. 5, the display panel 200 can include a frame 280, which can be located at the outer periphery of the pixel definition layer 250, or in other words, the annular portion 257 or the lateral spacing strip 251a and the longitudinal spacing strip 251b contained in the pixel definition layer 250 can be located in the area enclosed by the frame 280.

[0123] In some examples, the frame 280 and the pixel definition layer 250 can be arranged with a gap therebetween.

[0124] The frame 280 can have a certain height. In some examples, the height of the frame 280 can be greater than the height of the annular portion 257 or the height of the lateral spacing strip 251a and the longitudinal spacing strip 251b contained in the pixel definition layer 250. In other words, the height of the frame 280 can be H, and the height of the annular portion 257 or the height of the lateral spacing strip 251a or the longitudinal spacing strip 251b contained in the pixel definition layer 250 can be h, and H can be greater than h.

[0125] The arrangement of the frame 280 can better achieve the encapsulation of the display panel 200, which is conducive to reducing the probability of the invasion of oxygen, moisture and the like in the environment into the inside of the display panel 200 and polluting the light-emitting material located in the accommodation unit 252, and is also conducive to preventing the materials contained in the display panel 200 (such as the adhesive material contained in the encapsulation layer 220) from overflowing to unintended areas.

[0126] In some examples, the thin-film transistor layer 240 can be composed of a plurality of thin-film transistors arranged in a certain manner to form a thin-film transistor array. Each thin-film transistor in the thin-film transistor array can be used to control the connection of each light-emitting diode in the light-emitting layer 230 and the size of the current flowing into the light-emitting diode, so as to control whether each light-emitting diode emits light and the light intensity and the like.

[0127] Generally, the display panel 200 can be considered as being composed of a plurality of pixels, each of which can include a plurality of sub-pixels, and the plurality of pixels can be arranged in a pixel array in a certain manner. The plurality of sub-pixels in the same pixel can be respectively used to emit light of different colors, for example, each pixel can include a red sub-pixel, a green sub-pixel and a blue sub-pixel, the red sub-pixel can be used to emit red light, the green sub-pixel can be used to emit green light, and the blue sub-pixel can be used to emit blue light.

[0128] For example, referring to FIG. 6, the display panel 200 can include a plurality of sub-pixels 90, each of which corresponds to at least one light-emitting diode 91, and each of which corresponds to at least one thin film transistor 92. The thin film transistor 92 can be considered as a part of the aforementioned thin film transistor layer 240, and the light-emitting diode 91 can be composed of a part of the aforementioned cathode 261, a part of the electron injection layer 262, a part of the electron transport layer 263, a part of the light-emitting layer 230, a part of the hole transport layer 264, a part of the hole injection layer 265 and a part of the anode 266. The thin film transistor 92 can be used to control the light-emitting diode 91 to emit light.

[0129] Referring to FIG. 7 or FIG. 8, in order to prevent the adverse effects of moisture or oxygen in the environment on the various materials inside the display panel 200, the stability of the structure of the display panel 200 and the reliability of the function are improved. In some examples, the display panel 200 can be provided with an encapsulation structure 267, which can be wrapped around the outer periphery of the cathode 261, the electron injection layer 262, the electron transport layer 263, the light-emitting layer 230, the hole transport layer 264, the hole injection layer 265, the anode 266, the pixel definition layer 250 and the thin film transistor layer 240. In other words, the encapsulation layer 220, the substrate 210 and the encapsulation structure 267 can form a closed barrel-shaped structure, the encapsulation layer 220 and the substrate 210 can be considered as the barrel cover and the barrel bottom of the barrel-shaped structure, the encapsulation structure 267 can be generally considered as the barrel wall of the barrel-shaped structure, and the various functional layers contained in the aforementioned display panel 200 can be located in the internal space of the barrel-shaped structure.

[0130] For example, the encapsulation structure 267 can be composed of one or more of the following materials: vanadium pentoxide (V2O5), phosphorus pentoxide (P2O5), iron trioxide (Fe2O3), tellurium dioxide (TeO2), barium oxide (BaO), silicon dioxide (SiO2), boron trioxide (B2O3), lead oxide (PbO) or tin oxide (SnO), etc. One possible case is that the above-mentioned materials account for 20% to 80% of the total mass of the constituent materials of the encapsulation structure 267.

[0131] Exemplarily, the packaging structure 267 can further include a proportion of filler, which can be composed of ceramic powder and / or refractory oxide, and the mass of the filler can account for 5% to 40% of the total mass of the constituent materials of the packaging structure 267.

[0132] Exemplarily, the packaging structure 267 can further include a proportion of adhesive, for example, diethylene glycol monobutyl ether (2-butoxyethanol), and the mass of the adhesive can account for 10% to 40% of the total mass of the constituent materials of the packaging structure 267.

[0133] As a possible implementation manner, the packaging structure 267 can be formed by processing the constituent materials thereof through laser melting molding. In some scenarios, the packaging structure 267 described above can be referred to as a Frit structure or a connecting wall.

[0134] In some examples, the substrate 210 and / or the packaging layer 220 included in the display panel 200 can be a rigid structure, or in other words, the display panel 200 is a rigid package. In this case, referring to FIG. 7, the thickness of the packaging layer 220 can be relatively thick, and the aforementioned packaging structure 267 can be located between the packaging layer 220 and the substrate 210.

[0135] In some examples, the substrate 210 and / or the packaging layer 220 included in the display panel 200 can be a flexible structure, or in other words, the display panel 200 is a flexible package. In this case, referring to FIG. 8, the thickness of the packaging layer 220 can be relatively thin, and the aforementioned packaging structure 267 can be wrapped around the outer periphery of the packaging layer 220.

[0136] Referring to FIGS. 7 to 9, in some examples, the display panel 200 can further include a touch layer 270, which can be used to implement the touch function of the display screen module 100. Exemplarily, the touch layer 270 can include electronic components such as touch sensors, touch controllers, and touch driving circuits. Through these electronic components, the touch layer 270 can implement the touch detection function of the display panel 200.

[0137] In one possible case, referring to FIG. 7 or FIG. 8, the touch layer 270 can be located between the packaging layer 220 and the light-emitting layer 230, for example, the touch layer 270 can be located between the packaging layer 220 and the cathode 261. In some examples, the display panel 200 with this structure can be referred to as an In-cell display panel.

[0138] In one possible case, referring to FIG. 9, the touch layer 270 can be located on the side of the packaging layer 220 away from the light-emitting layer 230. In some examples, the display panel 200 with this structure can be referred to as an On-cell display panel.

[0139] In some examples, the touch layer 270 can further include a transparent conductive film (TCF), which can be composed of one or more of indium tin oxide, carbon nanotubes, or a metal network, and the like, and which can be coated on a side of the touch layer 270 distal from the substrate 210.

[0140] To reduce the interference of the electromagnetic waves generated by the display module 100 to other electronic components within the electronic device 10, in some examples, referring to FIG. 7 or FIG. 8, the display panel 200 can include a touch layer 270, which can be located between the encapsulation layer 220 and the cathode 261, in other words, the display panel 200 can be an In-cell structure. On this basis, an end of the encapsulation structure 267 of the display panel 200 close to the touch layer 270 can be connected with the touch layer 270. Specifically, the conductive material in the encapsulation structure 267 can be in contact with the conductive material in the touch layer 270. For example, the encapsulation structure 267 can be in contact with the transparent conductive film of the touch layer 270.

[0141] In some examples, to reduce the interference of the electromagnetic waves generated by the display panel 200 to other electronic components of the electronic device 10, as shown in FIG. 7 or FIG. 8, the encapsulation structure 267 can be provided with an adhesive portion 268, an end of the adhesive portion 268 close to the encapsulation layer 220 can be adhered to the encapsulation layer 220, and an end of the adhesive portion 268 close to the substrate 210 can be adhered to the substrate 210.

[0142] By way of example, the adhesive portion 268 can include one or more of a metal element, carbon particles, or a conductive polymer. For example, the adhesive portion 268 can include an indium tin oxide conductive adhesive.

[0143] By way of example and not limitation, in the case where both the adhesive portion 268 and the encapsulation structure 267 include conductive materials, the conductive material in the adhesive portion 268 can be in contact with the conductive material in the encapsulation structure 267.

[0144] One possible case is that, referring to FIG. 7 or FIG. 8, the two ends of the encapsulation structure 267 are respectively located close to the encapsulation layer 220 and the substrate 210, and the two ends of the adhesive portion 268 are respectively located close to the encapsulation layer 220 and the substrate. In other words, the encapsulation structure 267 can extend from an end close to the encapsulation layer 220 to an end close to the substrate 210, and similarly, the adhesive portion 268 can also extend from an end close to the encapsulation layer 220 to an end close to the substrate 210.

[0145] In one possible case, referring to FIG. 10, one end of the encapsulation structure 267 can be arranged close to the encapsulation layer 220, and the other end can be in contact with the adhesive portion 268; one end of the adhesive portion 268 can be arranged close to the substrate 210, and the other end can be in contact with the encapsulation structure 267. Alternatively, referring to FIG. 11, one end of the encapsulation structure 267 can be arranged close to the substrate 210, and the other end can be in contact with the adhesive portion 268; one end of the adhesive portion 268 can be arranged close to the encapsulation layer 220, and the other end can be in contact with the encapsulation structure 267. In the case of a flexible encapsulation, the substrate 210 and the encapsulation layer 220 can both be made of a flexible material such as polyimide, for example. In this case, in order to reduce the interference of the electromagnetic waves generated by the display panel 200 with other electronic components in the electronic device 10, in some examples, the structure of the pixel definition layer 250 of the display panel 200 can be improved.

[0146] Referring to FIG. 12, the pixel definition layer 250 is arranged apart from the frame 280, and a groove 253 can be arranged between the outer periphery of the pixel definition layer 250 and the frame 280, for example. In order to reduce the probability of the electromagnetic waves generated by the display panel 200 propagating in the circumferential direction of the display panel 200, and to reduce the interference of the display panel 200 with other electronic components in the electronic device 10, in some examples, the inside of the groove 253 can be provided with a shielding structure 300a composed at least partially of a conductive material. In other words, in some examples, the outer periphery of the pixel definition layer 250 can be provided with the shielding structure 300a, or in other words, the shielding structure 300a can be arranged between the pixel definition layer 250 and the frame 280.

[0147] Taking the portion of the groove 253 on the right edge of the pixel definition layer 250 in FIG. 12 as an example, the left side of the groove 253 is the side wall 255 on the right side of the pixel definition layer 250, and the right side of the groove 253 is the side wall 281 on the left side of the frame 280.

[0148] Referring to FIG. 13, in one possible case, the shielding structure 300a can be a conductive coating arranged on the surface of the side wall 255 and / or the surface of the side wall 281. For example, the shielding structure 300a can include a conductive coating 310 and / or a conductive coating 312, wherein the conductive coating 310 is arranged on the surface of the side wall 255, and the conductive coating 312 can be arranged on the surface of the side wall 281.

[0149] Exemplarily, the shielding structure 300a can further include a conductive coating arranged on the bottom surface of the trench 253. Referring to FIG. 13, the shielding structure 300a can further include a conductive coating 314 located on the bottom surface of the trench 253. In one possible scenario, the conductive coating 314 can be electrically connected with the conductive coating 310 and the conductive coating 312 respectively. The three parts of the conductive coating can be formed in one machining process, or in other words, the three parts of the conductive coating can be integrally formed.

[0150] In one possible scenario, the conductive coating 310, the conductive coating 312 and the conductive coating 314 can be prepared by a plating deposition process.

[0151] Referring to FIG. 14, in one possible scenario, the shielding structure 300a can be a block composed of a conductive material arranged inside the trench 253, or in other words, the shielding structure 300a can be filled in the trench 253. The surface of the shielding structure 300a adjacent to the sidewall 255 can be in abutment with the surface of the sidewall 255, the surface of the shielding structure 300a adjacent to the sidewall 281 can be in abutment with the surface of the sidewall 281, and the surface of the shielding structure 300a facing the bottom surface of the trench 253 can be in abutment with the bottom surface of the trench 253.

[0152] In one possible scenario, the shielding structure 300a can be prepared by a high-precision inkjet process or a dispensing process.

[0153] In order to improve the shielding capability of the shielding structure 300a for electromagnetic waves, in one possible scenario, referring to FIG. 15 and FIG. 16, the shielding structure 300a can be a multi-layer structure arranged inside the trench 253. Exemplarily, the shielding structure 300a can include one or more conductive layers 320 and one or more insulating layers 322. The conductive layers 320 and the insulating layers 322 can be arranged adjacently and alternately, or in other words, one insulating layer 322 can be arranged between two adjacent conductive layers 320, and one conductive layer 320 can be arranged between two adjacent insulating layers 322.

[0154] For example, the conductive layer 320 in the shielding structure 300a can be composed of a metal material, an alloy material or a compound of a metal material, and the insulating material can be composed of an inorganic non-metallic material or an organic material.

[0155] It should be understood that the conductive layer 320 refers to that the conductivity of the material composing the functional layer is greater than or equal to a conductivity threshold, and the insulating layer 322 refers to that the conductivity of the material composing the functional layer is less than the conductivity threshold. The descriptions of other conductive layers or insulating layers in the embodiments of the present application can be referred to the explanations herein.

[0156] A possible way is that the shielding structure 300a formed by the combination of the conductive material and the insulating material can be prepared by multiple film deposition processes.

[0157] FIG. 17 exemplarily provides another structure of the pixel definition layer 250, the trench between the outer periphery of the pixel definition layer 250 and the frame 280 can include at least two sub-trenches, and the one of the two sub-trenches close to the outer periphery of the display panel 200 can be provided with a shielding structure. Such a pixel definition layer 250 not only retains the function of preventing the light-emitting materials in different accommodation units 252 from diffusing into each other, but also has good electromagnetic wave shielding performance, which can reduce the probability of the electromagnetic waves generated by the display panel 200 propagating to the outside, and is conducive to reducing the interference of the display panel 200 on other electronic components in the electronic device 10.

[0158] FIG. 17 is a schematic diagram 17-1 of the top view of the pixel definition layer 250, and a schematic diagram 17-2 of the cross section BB of the pixel definition layer 250. Exemplarily, a trench 253 can be formed between the outer periphery of the pixel definition layer 250 and the frame 280, the trench 253 can include a sub-trench 256a and a sub-trench 256b, and the trench 253 further includes a spacing part 254 between the sub-trench 256a and the sub-trench 256b. In other words, the inside of the trench 253 includes the spacing part 254, which can separate the inside space of the trench 253 into two sub-trenches on the left and right sides. The sub-trench on the left side close to the pixel definition layer 250 can be referred to as the sub-trench 256a, and the sub-trench on the right side close to the frame 280 can be referred to as the sub-trench 256b.

[0159] A possible case is that the inside of the sub-trench 256b can be provided with a shielding structure 300a.

[0160] Exemplarily, the shielding structure 300a can include a conductive coating arranged on the side wall surface of the spacing part 254 facing the frame 280 and / or a conductive coating arranged on the side wall surface of the frame 280 facing the spacing part 254. The shielding structure 300a can also include a conductive coating arranged on the bottom surface of the sub-trench 256b.

[0161] Exemplarily, the shielding structure 300a can include a conductive block structure arranged in the sub-trench 256b, or in other words, the shielding structure 300a can be filled in the inside of the sub-trench 256b.

[0162] Exemplarily, the shielding structure 300a can include a structure arranged by laminating a conductive material and an insulating material in the sub-trench 256b.

[0163] The description of the shielding structure 300a in the sub-groove 256b is similar to the description of FIGS. 13-16, and reference can be made to the foregoing description.

[0164] In one possible implementation, the shielding structure 300a can be disposed in the sub-groove 256a.

[0165] In one example, the shielding structure 300a can include a conductive coating on the sidewall surface of the spacer 254 facing the pixel definition layer 250 and / or a conductive coating on the sidewall surface of the pixel definition layer 250 facing the spacer 254. The shielding structure 300a can also include a conductive coating on the bottom surface of the sub-groove 256a.

[0166] In one example, the shielding structure 300a can include a conductive block structure in the sub-groove 256a, or in other words, the shielding structure 300a can fill the interior of the sub-groove 256a.

[0167] In one example, the shielding structure 300a can include a structure in the sub-groove 256a that is formed by stacking a conductive material and an insulating material.

[0168] The description of the shielding structure 300a in the sub-groove 256a is similar to the description of FIGS. 13-16, and reference can be made to the foregoing description.

[0169] In one possible implementation, the shielding structure 300a can be disposed in the sub-groove 256a and the sub-groove 256b.

[0170] In some examples, the groove 253 can include 3 or more sub-grooves, or in other words, there can be additional sub-grooves between the sub-groove 256a and the sub-groove 256b, and one or more of these sub-grooves can include the shielding structure 300a. The description of the shielding structure 300a in these sub-grooves is similar to the description of FIGS. 12-17, and reference can be made to the foregoing description.

[0171] To reduce the electromagnetic waves generated by the display panel 200 from propagating in a direction perpendicular to the plane in which the display panel 200 is disposed, thereby interfering with other electronic components in the electronic device 10, the display panel 200 can further include a shielding structure 300b disposed in the interior of the display panel 200. The shielding structure 300b can be disposed proximate to the substrate 210, and the shielding structure 300b can be substantially parallel to the plane in which the display panel 200 is disposed.

[0172] In some examples, referring to FIG. 18, the shielding structure 300b can be disposed between the substrate 210 and the thin-film transistor layer 240.

[0173] For example, the shielding structure 300b can include a conductive material. For instance, the shielding structure 300b can include one or more of a metal foil, a metal mesh, a conductive polymer, or a conductive coating.

[0174] For example, the shielding structure 300b can be a metal plating film on a side of the substrate 210 facing the thin-film transistor layer 240. For another example, the shielding structure 300b can be a metal plating film on a side of the thin-film transistor layer 240 facing the substrate 210.

[0175] For example, the shielding structure 300b can be a conductive paint or a conductive ink on a side of the substrate 210 facing the thin-film transistor layer 240.

[0176] For example, the shielding structure 300b can be poly(3,4-ethylenedioxythiophene) / poly(styrenesulfonate) or the like on a side of the thin-film transistor layer 240 facing the substrate 210.

[0177] For example, the shielding structure 300b can include a conductive material and an insulating material, which can be disposed in a stack. In other words, the shielding structure 300b can include a conductive layer and an insulating layer disposed in a stack, where the conductive layer can be composed of a metal material, an alloy material, or a compound of a metal material, and the insulating layer can be composed of an inorganic non-metallic material or an organic material. In this case, the structure of the shielding structure 300b can be substantially similar to that of the shielding structure 300a in FIG. 15 or 16.

[0178] In some examples, the shielding structure 300b can be disposed inside the thin-film transistor layer 240 and substantially parallel to a plane in which the thin-film transistor layer 240 is located.

[0179] FIG. 19 shows a structure of a thin-film transistor 400 according to an embodiment of the present application. The thin-film transistor 400 can be one of a plurality of thin-film transistors included in the thin-film transistor layer 240 described above. In other words, the thin-film transistor layer 240 described above can include a plurality of thin-film transistors 400 as shown in FIG. 16.

[0180] In some examples, the thin-film transistor 400 can include a substrate 410, a buffer layer 420, a source electrode 430, a drain electrode 440, a gate electrode 450, an active layer 460, and an insulating layer 470.

[0181] The substrate 410 can be used to support and carry the multi-layer structure included in the thin film transistor 400. In one possible implementation, the substrate 410 can be made of a rigid material, or the substrate 410 can be made of a flexible material. For example, the substrate 410 can be a glass substrate, a quartz substrate, a ceramic substrate, or the like. For another example, the substrate 410 can be made of a polymer such as polyimide, polyethylene terephthalate, polycarbonate, or the like.

[0182] In one possible implementation, the substrate 410 can be the same structure as the substrate 210 included in the display panel 200, which can reduce the thickness of the display panel 200 to some extent.

[0183] The buffer layer 420 can be located on the substrate 410, and the buffer layer 420 can be used to improve the flatness and smoothness of the substrate 410 to provide a good deposition surface for other functional processes. By way of example but not limitation, the buffer layer 420 can be made of one or more of an inorganic material, an organic material, or an organic-inorganic composite material. For example, the aforementioned inorganic material can include one or more of silicon dioxide, silicon nitride, or aluminum oxide. For example, the aforementioned organic material can include one or more of polyimide, acrylic resin, or polyethylene terephthalate.

[0184] The source 430, the drain 440, the gate 450, the active layer 460, and the insulating layer 470 can collectively constitute a transistor. The source 430 and the drain 440 can be electrically connected to the positive and negative terminals (or the negative and positive terminals) of an external circuit, respectively, and the external circuit electrically connected to the source 430 and the drain 440 can form a conduction loop when the source 430 and the drain 440 are in conduction. The active layer 460 can be in contact with the source 430 and the drain 440 at two ends thereof. The gate 450 can be located between the source 430 and the drain 440, and the gate 450 and the active layer 460 can be separated by the insulating layer 470. The gate 450 can be electrically connected to the external circuit and used to control the state of the active layer 460. For example, when the applied voltage of the gate 450 is greater than or equal to a voltage threshold value, the active layer 460 is in a conduction state, in which case the aforementioned source 430 and drain 440 in contact with the two ends of the active layer 460, respectively, can be in conduction. When the applied voltage of the gate 450 is less than the aforementioned voltage threshold value, the active layer 460 can be in a non-conduction state, in which case the aforementioned source 430 and drain 440 are not in conduction.

[0185] By way of example, referring to FIG. 16, the active layer 460 can be located on the buffer layer 420, one side of the active layer 460 away from one face of the buffer layer 420 can be in contact with the drain 440, and the other side of the active layer 460 away from the one face of the buffer layer 420 can be in contact with the source 430.

[0186] The insulating layer 470 can be located on the side of the active layer 460 away from the buffer layer 420, and the insulating layer 470 can be composed of multiple parts. For example, a first part of the insulating layer 470 can be located on the left side of the active layer 460, which can be located between the drain 440 and the buffer layer 420, or between the drain 440 and the active layer 460; a second part of the insulating layer 470 can be located on the side of the active layer 460 away from the buffer layer 420; a third part of the insulating layer 470 can be located on the right side of the active layer 460, which can be located between the source 430 and the buffer layer 420, or between the source 430 and the active layer 460. The first part and the second part of the insulating layer 470 can be separated by the part of the drain 440 in contact with the active layer 460, and the second part and the third part of the insulating layer 470 can be separated by the part of the source 430 in contact with the active layer 460.

[0187] Exemplarily, the gate 450 and the active layer 460 can be located on two opposite sides of the insulating layer 470, for example, the gate 450 can be located on the side of the insulating layer 470 away from the buffer layer 420 and in contact with the above-mentioned second part of the insulating layer 470; the active layer 460 can be located on the side of the insulating layer 470 close to the buffer layer 420 and in contact with the above-mentioned second part of the insulating layer 470. A possible case is that the gate 450 can be separated from the source 430, and the gate 450 can be separated from the drain 440.

[0188] In some examples, the source 430 of the thin film transistor 400 can be composed of one or more of the following materials: aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), nickel (Ni), molybdenum-tungsten alloy, or molybdenum-aluminum alloy, etc.

[0189] In some examples, the drain 440 of the thin film transistor 400 can be composed of one or more of the following materials: aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), nickel (Ni), molybdenum-tungsten alloy, or molybdenum-aluminum alloy, etc.

[0190] In some examples, the gate 450 of the thin film transistor 400 can be composed of one or more of the following materials: polysilicon, metal or metal alloy, wherein the metal can include one or more of the following: aluminum (Al), molybdenum (Mo), titanium (Ti), tungsten (W), or chromium (Cr), etc.; the metal alloy can include molybdenum-tungsten alloy or molybdenum-titanium alloy, etc.

[0191] In some examples, the active layer 460 of the thin film transistor 400 can be composed of polysilicon.

[0192] In some examples, the insulating layer 470 of the thin-film transistor 400 can be composed of one or more of the following materials: silicon dioxide, silicon nitride, aluminum oxide, or hafnium oxide (HfO2), etc.

[0193] In some examples, the thin-film transistor 400 can further include a passivation layer 480, which can be located on the side of the gate 450 away from the buffer layer 420 and cover the aforementioned source 430, drain 440, and gate 450. The passivation layer 480 can be used to protect the source 430, drain 440, and gate 450 from oxygen, moisture, etc. in the environment. Illustratively, the passivation layer 480 can be composed of inorganic materials and / or organic materials, for example, the passivation layer 480 can be composed of one or more of the following: silicon dioxide, silicon nitride, or polyimide, etc.

[0194] In some examples, in order to reduce the adverse effects of the display panel 200 on electronic components in external circuits, the thin-film transistor 400 can further include a shielding structure 300b, which can be located between the substrate 410 and the buffer layer 420.

[0195] Illustratively, the shielding structure 300b can include conductive materials. For example, the shielding structure 300b can include one or more of the following: metal foil, metal mesh, conductive polymer, or conductive coating.

[0196] For example, the shielding structure 300b can be a metal plating film, conductive paint, conductive ink, or poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate, etc. located on the side of the substrate 410 facing the buffer layer 420.

[0197] Illustratively, the shielding structure 300b can include conductive materials and insulating materials, which can be arranged in a stack, in other words, the shielding structure 300b can include a conductive layer and an insulating layer arranged in a stack, wherein the conductive layer can be composed of metal materials, alloy materials, or compounds of metal materials, etc., and the insulating layer can be composed of inorganic non-metallic materials or organic materials. In this case, the structure of the shielding structure 300b can be roughly similar to that of the shielding structure 300a in FIG. 15 or FIG. 16.

[0198] In some scenarios, the active layer 460 of the thin-film transistor 400 can be composed of polycrystalline silicon, in which case the thin-film transistor 400 can be referred to as a low-temperature polysilicon (LTPS) thin-film transistor.

[0199] FIG. 20 shows a structure of another thin-film transistor 500 provided by embodiments of the present application. The thin-film transistor 500 can be one of the plurality of thin-film transistors included in the thin-film transistor layer 240 described above. In other words, the thin-film transistor layer 240 described above can include a plurality of thin-film transistors 500 as shown in FIG. 20.

[0200] In some examples, the thin-film transistor 500 can include a substrate 510, a buffer layer 520, a source electrode 530a, a drain electrode 540a, a gate electrode 550a, an active layer 560a, a source electrode 530b, a drain electrode 540b, a gate electrode 550b, an active layer 560b, and an insulating layer 570.

[0201] The substrate 510, the buffer layer 520, the source electrode 530a, the drain electrode 540a, the gate electrode 550a, the active layer 560a, and the insulating layer 570 can collectively constitute a sub-thin-film transistor 600; and the substrate 510, the buffer layer 520, the source electrode 530b, the drain electrode 540b, the gate electrode 550b, the active layer 560b, and the insulating layer 570 can collectively constitute a sub-thin-film transistor 700.

[0202] In other words, the thin-film transistor 500 can include the sub-thin-film transistor 600 and the sub-thin-film transistor 700, and the two sub-thin-film transistors can share the substrate 510, the buffer layer 520, and the insulating layer 570.

[0203] In some examples, the functions of the different functional layers in the sub-thin-film transistor 600 are similar to the functions of the corresponding functional layers in the thin-film transistor 400, and the relative positions between the different functional layers in the sub-thin-film transistor 600 are similar to the relative positions between the different functional layers in the thin-film transistor 400. For related descriptions of the sub-thin-film transistor 600, reference can be made to the content of the thin-film transistor 400 described above, and no further description is provided herein.

[0204] In some examples, the functions of the different functional layers in the sub-thin-film transistor 700 are similar to the functions of the corresponding functional layers in the thin-film transistor 400, and the relative positions between the different functional layers in the sub-thin-film transistor 700 are similar to the relative positions between the different functional layers in the thin-film transistor 400. For related descriptions of the sub-thin-film transistor 700, reference can be made to the content of the thin-film transistor 400 described above, and no further description is provided herein.

[0205] In some examples, the source electrode 530a or the source electrode 530b of the thin-film transistor 500 can be composed of one or more of the following materials: aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), nickel (Ni), molybdenum-tungsten alloy, or molybdenum-aluminum alloy, etc.

[0206] In some examples, the drain 540a or the drain 540b of the thin-film transistor 500 can be composed of one or more of the following materials: aluminum (Al), molybdenum (Mo), titanium (Ti), copper (Cu), nickel (Ni), molybdenum-tungsten alloy, or molybdenum-aluminum alloy, etc.

[0207] In some examples, the gate 550a or the gate 550b of the thin-film transistor 500 can be composed of one or more of the following materials: polysilicon, metal, or metal alloy, where the metal can include one or more of the following: aluminum (Al), molybdenum (Mo), titanium (Ti), tungsten (W), or chromium (Cr), etc.; the metal alloy can include molybdenum-tungsten alloy or molybdenum-titanium alloy, etc.

[0208] In some examples, the insulating layer 570 of the thin-film transistor 500 can be composed of one or more of the following materials: silicon dioxide, silicon nitride, aluminum oxide, or hafnium oxide (HfO2), etc.

[0209] In some examples, the active layer 560a in the sub-thin-film transistor 600 can be composed of an oxide semiconductor material, such as indium gallium zinc oxide (IGZO), etc. In this case, the sub-thin-film transistor 600 can be referred to as an indium gallium zinc oxide thin-film transistor. In some examples, the active layer 560b in the sub-thin-film transistor 700 can be composed of a material such as polysilicon, etc. In this case, the sub-thin-film transistor 700 can be referred to as an LTPS thin-film transistor.

[0210] In the case where the sub-thin-film transistor 600 is an indium gallium zinc oxide thin-film transistor and the sub-thin-film transistor 700 is a low-temperature polysilicon thin-film transistor, the thin-film transistor 500 can be referred to as a low-temperature polycrystalline oxide (LTPO) thin-film transistor.

[0211] In some examples, the sub-thin-film transistor 600 can further include a passivation layer 580a, which can be located on the side of the gate 550a away from the buffer layer 520 and cover the aforementioned source 530a, drain 540a, and gate 550a. The passivation layer 580a can be used to protect the source 530a, drain 540a, and gate 550a from oxygen, moisture, etc. in the environment. Illustratively, the passivation layer 580a can be composed of inorganic materials and / or organic materials, for example, the passivation layer 580a can be composed of one or more of the following: silicon dioxide, silicon nitride, or polyimide, etc.

[0212] Similarly, the sub-thin film transistor 700 can further include a passivation layer 580b, which can be located on the side of the gate 550b away from the buffer layer 520 and cover the aforementioned source 530b, drain 540b and gate 550b. The passivation layer 580b can be used to protect the source 530b, drain 540b and gate 550b from oxygen, moisture and the like in the environment. Illustratively, the passivation layer 580b can be composed of inorganic materials and / or organic materials, for example, the passivation layer 580b can be composed of one or more of silicon dioxide, silicon nitride or polyimide, etc.

[0213] In some examples, in order to reduce the adverse effects of the display panel 200 on other electronic components in the electronic device 10, the thin film transistor 500 can further include a shielding structure 300b, which can be located between the substrate 510 and the buffer layer 520.

[0214] Illustratively, the shielding structure 300b can include a conductive material. For example, the shielding structure 300b can include one or more of the following: metal foil, metal mesh, conductive polymer or conductive coating.

[0215] For example, the shielding structure 300b can be a metal plating film, conductive paint, conductive ink or poly(3,4-ethylenedioxythiophene) / polystyrene sulfonate, etc. located on the side of the substrate 510 facing the buffer layer 520.

[0216] Illustratively, the shielding structure 300b can include a conductive material and an insulating material, which can be arranged in a stack. In other words, the shielding structure 300b can include a conductive layer and an insulating layer arranged in a stack, wherein the conductive layer can be composed of a metal material, an alloy material or a compound of a metal material, etc., and the insulating layer can be composed of an inorganic non-metallic material or an organic material. In this case, the structure of the shielding structure 300b can be substantially similar to that of the shielding structure 300a in FIG. 15 or FIG. 16.

[0217] In some examples, the display panel 200 can simultaneously include the aforementioned shielding structure 300a and shielding structure 300b.

[0218] Referring to FIG. 21, illustratively, the shielding structure 300b can be in the form of a film, a sheet or a mesh, etc., and the plane in which the shielding structure 300b is located can be substantially parallel to the plane in which the display panel 200 is located. One possible case is that the shielding structure 300b can be arranged close to the substrate 210 of the display panel 200.

[0219] Referring to FIG. 21, exemplary, the shielding structure 300a can extend substantially along the thickness direction of the display panel 200, or the shielding structure 300a can extend along a reference direction, the reference direction forms an angle with the thickness direction of the display panel 200. A possible case is that the shielding structure 300a can extend from a position close to the substrate 210 to a direction away from the substrate 210.

[0220] Exemplary, the shielding structure 300a can be in contact with the shielding structure 300b, or in other words, the shielding structure 300a and the shielding structure 300b in the display panel 200 are continuously arranged, or in other words, the position adjacent to the shielding structure 300a and the shielding structure 300b can not be arranged with a gap. Such a shielding structure has a better shielding effect on the electromagnetic waves generated inside the display panel 200, and the display panel 200 has less interference on other electronic components in the electronic device 10.

[0221] Based on the above technical solutions, the embodiment of the present application further provides an electronic device, which can be a mobile phone, a tablet computer and the like portable device, the electronic device can also be a bracelet, a watch, smart glasses and the like wearable device, or the electronic device can also be a smart screen, a television and the like home device, and the present application does not limit this.

[0222] In some examples, the electronic device can include the display screen module 100 described in the foregoing, and the display screen module 100 can include any one of the display panels 200 described in the foregoing. Alternatively, the electronic device can include any one of the display panels 200 described in the foregoing.

[0223] Exemplary, referring to FIG. 22, the above-mentioned electronic device can be a watch 40, the watch 40 can include the aforementioned display screen module 100, and the watch 40 can further include a watch body 41, and the display screen module 100 can be located in the watch body 41. The watch 40 can further include a watch strap 42a and a watch strap 42b, and the watch strap 42a and the watch strap 42b can be respectively connected to two sides of the watch body 41 oppositely arranged. A possible case is that one end of the watch strap 42a away from the watch body 41 can also be connected with a watch buckle, and the watch buckle can be used to realize the relative fixation of the watch strap 42a and the watch strap 42b.

[0224] The above description is merely a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any person skilled in the art can easily think of changes or replacements within the technical range disclosed in the present application, which should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A display panel (200), characterized by, The display panel (200) comprises a first substrate (210), a light-emitting layer (230), a thin-film transistor layer (240), an encapsulation layer (220) and a shielding structure, the light-emitting layer (230) and the thin-film transistor layer (240) are located between the first substrate (210) and the encapsulation layer (220), and the thin-film transistor layer (240) is configured to control the light-emitting layer (230) to emit light; the shielding structure is located between the first substrate (210) and the encapsulation layer (220). The shielding structure comprises a first portion extending along a first direction, the first direction being parallel to a plane in which the display panel (200) is located, and the first portion is located between the first substrate (210) and the thin-film transistor layer (240).

2. The display panel (200) according to claim 1, characterized in that, The shielding structure comprises a second portion extending along the first direction, the first direction being parallel to the plane in which the display panel (200) is located, the thin-film transistor layer (240) comprises a plurality of thin-film transistors, the thin-film transistors comprise a second substrate and a buffer layer, and the second portion is located between the second substrate and the buffer layer.

3. The display panel (200) according to claim 1 or 2, characterized in that, The shielding structure comprises a third portion extending along a second direction, the second direction being perpendicular to the plane in which the display panel (200) is located, and the third portion is located at an outer periphery of the light-emitting layer (230) and the thin-film transistor layer (240).

4. The display panel (200) according to any one of claims 1 to 3, characterized in that, The substrate is of a rigid structure, the third portion comprises a connecting wall (267), and the connecting wall (267) is configured to laser fuse the encapsulation layer (220) and the first substrate (210).

5. The display panel (200) according to claim 4, characterized in that, The third portion further comprises a bonding portion (268), and the bonding portion (268) is located outside the connecting wall (267).

6. The display panel (200) according to claim 5, characterized in that, The display panel (200) further comprises a touch layer (270), the touch layer (270) is located between the encapsulation layer (220) and the first substrate (210), the touch layer (270) is in contact with the encapsulation layer (220), and one end of the connecting wall (267) close to the encapsulation layer (220) is in contact with the touch layer (270).

7. The display panel (200) according to claim 5 or 6, wherein, The display panel (200) further comprises a pixel definition layer (250) and a groove (253), the pixel definition layer (250) is located between the light-emitting layer (230) and the thin-film transistor layer (240), the groove (253) is located at an outer periphery of the pixel definition layer (250), and the shielding structure is at least partially located in the groove (253).

8. The display panel (200) according to any one of claims 1 to 7, characterized in that, The groove (253) comprises a first sub-groove (256a) and a second sub-groove (256b), the first sub-groove (256a) and the second sub-groove (256b) are arranged in a spaced manner, the second sub-groove (256b) is located at an outer periphery of the first sub-groove (256a), and the shielding structure is at least partially located in the second sub-groove (256b).

9. The display panel (200) according to claim 8, characterized in that, The shielding structure is at least partially located on an inner wall surface of the groove (253), or the shielding structure is at least partially filled in the groove (253).

10. The display panel (200) according to claim 8 or 9, characterized in that, ​ 11. The display panel (200) according to any one of claims 1 to 10, characterized in that, The shielding structure comprises layers of conductive material and layers of insulating material, which are arranged in an alternating stack.

12. The display panel (200) according to any one of claims 1 to 11, characterized in that, The thin film transistor layer (240) comprises low-temperature polysilicon thin film transistors and / or low-temperature polycrystalline oxide thin film transistors.

13. A display screen module (100) characterized by The display panel (200) comprises: A cover plate (110), a polarizer (120), and the display panel (200) according to any one of claims 1-12, wherein the polarizer (120) is located between the cover plate (110) and the display panel (200).

14. The display screen module (100) according to claim 13, characterized in that The display module (100) further comprises a shielding cover (150), which is located on a side of the display panel (200) away from the cover plate (110), and covers an outer periphery of the display panel (200).

15. An electronic device (10), characterized by The display module (100) further comprises a shielding cover (150), which is located on a side of the display panel (200) away from the cover plate (110), and covers an outer periphery of the display panel (200). The display module (100) further comprises a shielding cover (150), which is located on a side of the display panel (200) away from the cover plate (110), and covers an outer periphery of the display panel (200). The display module (100) further comprises a shielding cover (150), which is located on a side of the display panel (200) away from the cover plate (110), and covers an outer periphery of the display panel (200).

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