Multi-aperture array for manipulating a plurality of first individual charged particle beams as well as multiple particle beam system comprising the multi-aperture array

Abstract

Multi-aperture array for manipulating a plurality of first individual charged particle beams, comprising the following: a main body having a plurality of apertures, wherein in each case one of the first individual charged particle beams passes through one aperture during operation of the multi-aperture array; at least a plurality of first electrodes, wherein each one of the first electrodes is arranged at one of the apertures in order to individually influence the first individual particle beam passing through the aperture, and wherein each one of the first electrodes is connected to a control unit; wherein the main body has a first depth TG in a z direction along which the first apertures extend through the main body; wherein the first electrodes each have a depth TE in the z direction that is smaller than the depth TG, thus TE < TG; wherein the first electrodes are each embedded in the main body in such a way that they are exposed in a region adjacent to the aperture and in a manner forming the aperture and are otherwise embedded directly in the main body and thus without an electrical insulation layer; and wherein the material of the main body comprises a glass or is made of a glass.

Description

[0001]

[0002] Multi-aperture array for manipulating a plurality of first individual charged particle beams as well as multiple particle beam system comprising the multi-aperture array

[0003] Field of the invention

[0004] The invention relates to multiple particle beam systems in general and to multi-beam particle microscopes operating with a plurality of individual charged particle beams in particular. Specifically, the invention relates to a multi-aperture array for manipulating a plurality of first individual charged particle beams and to a multiple particle beam system comprising the multiaperture array.

[0005] Prior art

[0006] With the ongoing development of ever smaller and ever more complex microstructures such as semiconductor components, there is a need to further develop and optimize planar production techniques and inspection systems for producing and inspecting small dimensions of the microstructures. For instance, the development and production of the semiconductor components require monitoring of the design of test wafers, and the planar production techniques require process optimization for reliable production with high throughput. Moreover, there have been recent demands for an analysis of semiconductor wafers for reverse engineering and for a customized, individual configuration of semiconductor components. Therefore, there is a need for inspection means which can be used with high throughput to examine the microstructures on wafers with high accuracy.

[0007] Typical silicon wafers used in the production of semiconductor components have diameters of up to 300 mm. Each wafer is divided into at least 30 to 60 repeating regions (“dies”) with a size of up to 800 mm2. A semiconductor device comprises multiple semiconductor structures, which are produced in layers on a surface of the wafer by planar integration techniques. Semiconductor wafers typically have a plane surface on account of the production processes. The feature size of the integrated semiconductor structures in this case extends from a few pm to the critical dimensions (CD) of a few nanometres, and the feature sizes will become even smaller in the near future. The expectation is that in future the feature sizes or critical dimensions (CD) will correspond to the 3nm, 2nm or even smaller technology nodes of the International Technology Roadmap for Semiconductors (ITRS). In the case of the aforementioned small feature sizes, defects of the order of the critical dimensions must be identified quickly over a very large area. For multiple applications, the specification requirement regarding the accuracy of a measurement provided by an inspection device is even higher, for example by a factor of two or one order of magnitude. For example, a width of a semiconductor feature must be measured with an accuracy better than 1 nm, for example 0.3 nm or even less, and a relative position of semiconductor structures must be determined with an overlay accuracy better than 1 nm, for example 0.3 nm or even less.

[0008] The MSEM, a multi-beam scanning electron microscope, is a relatively new development in the field of charged particle systems (“charged particle microscopes”, CPMs). For example, a multi-beam scanning electron microscope is disclosed in US 7 244 949 B2 and in US 2019 / 0355544 A1. In the case of a multi-beam electron microscope or MSEM, a sample is irradiated simultaneously by a plurality of individual electron beams arranged in a field or raster. For instance, 4 to 10 000 individual electron beams may be provided as primary radiation, with each individual electron beam being separated from an adjacent individual electron beam by a pitch of 1 to 200 micrometres. For example, an MSEM has approximately 100 separate individual electron beams (“beamlets”), which are arranged for example in a hexagonal grid, with the individual electron beams being separated by a pitch of approximately 10 pm. The plurality of individual charged particle beams (primary beams) are focused on a surface of a sample to be examined by way of a common objective lens. For example, the sample can be a semiconductor wafer that is secured to a wafer holder mounted on a movable stage. When the wafer surface is illuminated by the primary individual charged particle beams, interaction products, for example secondary electrons or backscattered electrons, emanate from the surface of the wafer. Their start points correspond to those locations on the sample on which the multiplicity of primary individual particle beams are focused in each case. The amount and the energy of the interaction products depend on the material composition and the topography of the wafer surface. The interaction products form a plurality of secondary individual particle beams (secondary beams), which are collected by the common objective lens and, by virtue of a projection imaging system of the multi-beam inspection system, are incident on a detector arranged in a detection plane. The detector comprises a plurality of detection regions, each of which comprises a plurality of detection pixels, and the detector captures an intensity distribution for each of the secondary individual particle beams. An image field of 100 pm x 100 pm, for example, is obtained in the process.

[0009] The multi-beam electron microscope of the prior art comprises a sequence of electrostatic and magnetic elements. At least some of the electrostatic and magnetic elements are adjustable in order to adapt the focus position and the stigmation of the multiplicity of individual charged particle beams. The state-of-the-art multi-beam system with charged particles moreover comprises at least one crossover plane of the primary or the secondary individual charged particle beams. Moreover, the state-of-the-art system comprises detection systems to facilitate setting. The state-of-the-art multi-beam particle microscope comprises at least one beam deflector (deflection scanner) for collective scanning of a region of the sample surface by means of the multiplicity of primary individual particle beams in order to obtain an image field of the sample surface.

[0010] What is known as a beam splitter (or alternatively beam separator or beam divider) is used to separate the particle-optical beam path of the primary beams from the particle-optical beam path of the secondary beams. Separation is effected by means of specific arrangements of magnetic fields and / or electrostatic fields, for example by means of a Wien filter.

[0011] In the case of multiple particle beam systems, a distinction is made in principle between systems that work with a single column and systems that work with a plurality of columns. In systems with a single column, the individual particle beams at least in part pass through the same particle-optical unit or through one or more global particle lenses. In addition, in a single column, the individual particle beams are relatively close to one another. Despite the partially global particle-optical elements, there is the need for individual influenceability and / or shapeability of the individual particle beams even in the case of single columns, in order to correct imaging aberrations such as image field curvature, field astigmatism and other aberrations. A so-called micro-optical unit can be used for this individual influencing and / or shaping of the individual particle beams. The micro-optical unit is often also referred to as a multi-beam particle generator for creating and shaping a plurality of individual particle beams. The multi-beam particle generator or the micro-optical unit comprises a sequence of several multi-aperture plates, which can be used for active beam shaping or of which at least one multiaperture plate can be used for active beam shaping. Electrodes that can be actuated collectively or on an individual basis can be provided to this end for example in the region of the apertures. They can be, for example, ring electrodes or multi-pole electrodes. According to another example, a multi-aperture plate can have a monolithic embodiment, with a voltage applied to the multi-aperture plate overall, i.e. the monolithic multi-aperture plate is then at a certain potential, and so its openings can create a lens effect in interaction with other particle- optical elements. Other configurations of a multi-aperture plate for active beam shaping are also possible.

[0012] For the best possible individual particle beam shaping / individual particle beam influencing, it is necessary for the apertures through which an individual particle beam passes to be exactly aligned with one another. For example, it can be necessary for the centres of the apertures to have to lie exactly on top of one another. Moreover, the apertures in known multi-aperture plates are relatively small, e.g. aperture diameters are each less than 100 pm, e.g. only 90 pm or less. These two conditions - small size of the aperture diameters and precise alignment of the apertures / electrodes, including control - can be met by using MEMS techniques for producing a micro-optical unit. In other words, similar processes to those also used in semiconductor production are used for the production of a micro-optical unit or its multiaperture plates.

[0013] The applications of semiconductor components are rendered possible, for example, by combining regions of different doping or by the influence of insulating separation layers. In order to meet these requirements, various layers are applied successively to a base substrate in the form of a disc, the so-called wafer, during the production of semiconductor components (the so-called planar process). A semiconductor material, mostly silicon, is used as the base substrate, while silicon oxide, for example, is used as the insulating layer. The applied layers can then each be structured by means of lithographic methods. Thus, integrated circuits with conductor tracks, i.e. semiconductor chips, can be created - or simply even micro-optical units with multi-aperture plates or multi-aperture arrays for multiple particle beam systems.

[0014] The individual influencing of individual charged particle beams passing through each of the apertures of a multi-aperture plate requires a plurality of electrodes which must be correctly positioned in the semiconductor material and electrically insulated from the semiconductor material. In addition, a plurality of conductor tracks are required to apply voltage to the electrodes arranged in the region of the apertures. The number of these conductor tracks may be very high and multiple conductor tracks may be required for each aperture. This relates, for example, to the so-called multi-stigmator of a micro-optical unit, which in the region of each aperture has a multipole electrode, for example a respective octupole electrode. This requires eight conductor tracks per aperture. Increasing the number of individual particle beams of a multi-beam particle beam system quickly requires more than 1000 conductor tracks for a multiaperture array. Each of these conductor tracks must also be carefully positioned in the semiconductor material, for example silicon, and electrically insulated from the semiconductor material, which is why the production of multi-aperture arrays for multi-beam particle beam systems is very complex, requires many process steps and a lot of experience.

[0015] US 2020 / 0317504 A1 discloses that micros lenses, micro deflectors, or stigmators may be manufactured by a MEMS process on silicon chips (e.g., on semiconductor chips). DE 10 2008 010 123 A1 discloses a multi-beam deflector array for a maskless particle beam processing. A multi-aperture arrangement is disclosed that is silicon-based.

[0016] I.L. Berry et al., Programmable aperture plate for maskless high-throughput nanolithography, Jornal of Vacuum Science & Technology B 15 (1997), pages 2382 - 2386, discloses a programmable aperture plate that can be fabricated using MEMS technology.

[0017] Description of the invention

[0018] It is thus an object of the present invention to provide a multi-aperture array for a multi-beam particle beam system that is simple or easier to manufacture. However, the multi-aperture array should be of at least the same quality and have the same performance as the known multiaperture arrays.

[0019] The object is achieved by the subject matter of independent Patent Claim 1 . Advantageous embodiments of the invention are evident from the dependent patent claims.

[0020] The present patent application claims the priority of the German patent application No. 102024 128 159.6 filed on 27 September 2024, the disclosure of which in the full scope thereof is incorporated in the present patent application by reference.

[0021] A fundamental idea of the present invention is to use a glass as the material for a main body of a multi-aperture array instead of a semiconductor material. Glass is inherently an insulator, such that, in the manufacture of a multi-aperture array for active beam shaping, electrodes arranged in the main body and associated conductor tracks can be embedded in the main body directly and thus without an electrical insulation layer. This significantly simplifies the manufacturing process of a multi-aperture array. In addition, the transparency of glass affords additional advantageous possibilities for process control in the manufacture of a multi-aperture array.

[0022] The use of glass as a main body for a multi-aperture array is made possible by the fact that the process steps known from semiconductor production or MEMS methods are now also applicable to glass as a base material. In particular, glass wafers can be structured in principle by means of the same photolithographic methods that are also used in semiconductor wafers. Chemical etching and fragmentation are also possible like with semiconductor products. So- called QMEMS and QMEMS methods or QMEMS products are therefore also discussed in connection with glass or quartz. An overview of these methods is provided by the publications M. Tanaka, “An overview of quartz MEMS devices", 2010 IEEE International Frequency Control Symposium, Newport Beach, CA, USA, 2010, pp. 162-167, and Linden, J., Melech,

[0023] N., Sakaev, I. et al., “Femtosecond laser-assisted fabrication of piezoelectrically actuated crystalline quartz-based MEMS resonators", Microsyst Nanoeng 9, 38 (2023).

[0024] Specifically, according to a first aspect, the invention relates to a multi-aperture array for manipulating a plurality of first individual charged particle beams. For example, the first individual charged particle beams may be electron beams, ion beams, muon beams, or other charged particle beams. In this case, a main body of the multi-aperture array has a plurality of apertures, wherein in each case one of the first charged particle beams passes through an aperture associated therewith during operation of the multi-aperture array. The number of apertures is matched to the number of first individual charged particle beams. The term “array” here means that the plurality of apertures are arranged in a fixed grid relative to one another. For example, the apertures can be arranged in a rectangular grid or in a hexagonal grid. The apertures are preferably arranged in a hexagonal grid and the total number of apertures corresponding to the number of first individual charged particle beams is 3 n (n - 1) + 1 , where n is a natural number.

[0025] Furthermore, the multi-aperture array has at least a plurality of first electrodes. Each one of the first electrodes is arranged at one of the apertures in order to individually influence the first individual particle beam passing through the respective aperture. In addition, each of the first electrodes (and any second and / or further electrodes present) is connected to a control unit. The individual influencing of a first individual charged particle beam comprises, for example, a focusing, a deflection or a stigmation.

[0026] The main body of the multi-aperture array has a first depth TG in a z direction along which the first apertures extend through the main body. The first electrodes each have a depth TE in the z direction that is smaller than the depth TG, thus TE < TG. The first electrodes are each embedded in the main body of the multi-aperture array in such a way that they are exposed in a region adjacent to the aperture and in a manner forming the aperture and are otherwise embedded directly in the main body and thus without an electrical insulation layer. The material of the main body comprises a glass or is made of a glass. In any case, the material of the main body is therefore an insulator. The insulation layers required for electrodes and their associated conductor tracks according to the prior art can thus be omitted in the inventive embodiment of the multi-aperture array. This significantly simplifies the production of the multi-aperture array. This applies to both multi-aperture arrays with exactly one plurality of first electrodes per aperture, but even more so to multi-aperture arrays with a plurality of further electrodes, for example a plurality of second electrodes, a plurality of third electrodes, a plurality of fourth electrodes, and so on. In addition, the transparency of glass affords additional possibilities for process control in the manufacture of a multi-aperture array.

[0027] Since the main body made of glass is already insulating itself, higher voltages can also be applied to the electrodes within the apertures than is the case according to the prior art for main bodies made of a semiconductor material such as silicon, for example. This allows the application range of the multi-aperture array in a multi-beam particle beam system to be extended.

[0028] According to a preferred embodiment of the invention, each of the first electrodes is connected to an associated first conductor track within the main body. In addition, the first conductor tracks are each directly embedded in the glass body and embedded in particular completely in the glass body. Again, it is thus not necessary to surround the conductor track with an electrical insulation layer here. This in turn helps to simplify a manufacturing process for the multiaperture array.

[0029] According to a preferred embodiment of the invention, each of the first conductor tracks in the main body has an angled embodiment and on the one hand runs in the z direction and on the other in a direction orthogonal to the z direction. For example, the direction orthogonal to the z direction may be an x direction or y direction, or another direction in the x,y plane. This angled arrangement of the first conductor tracks is very easy for the manufacturer to implement. The first conductor tracks in turn run directly in the glass body and are embedded therein. Complete embedding is once again preferred.

[0030] According to another preferred embodiment of the invention, the main body of the multiaperture array has a top side that is oriented in the entrance direction of the first individual charged particle beams during operation of the multi-aperture array. In this case, the top side of the main body has an upper discharge layer made of a material with a high conductivity, so that charging of the main body is avoided during operation of the multi-aperture array. The use of such discharge layers is already known in principle. Examples of materials include gold, copper, platinum, or titanium nitride.

[0031] According to another preferred embodiment of the invention, a short-circuit protective layer is provided on the main body within each of the apertures, which short-circuit protective layer extends from the top side of the main body with the upper discharge layer up to the first electrode and comprises or consists of a material with a low conductivity, so that a short circuit between the discharge layer and the electrode is avoided during operation of the multi-aperture array. A suitable material for the short-circuit protective layer is, for example, a metal with a high surface resistance, such as tungsten, or a very low doped semiconductor material, such as silicon.

[0032] According to another preferred embodiment of the invention, the main body has a bottom side that is oriented in the exit direction of the first individual charged particle beams from the multiaperture array during operation of the multi-aperture array. In this case, the bottom side of the main body has a lower discharge layer made of a material with a high conductivity, so that charging of the main body is avoided during operation of the multi-aperture array. In practice, this charging is usually achieved by scattering electrons, which are generated during scattering processes or in secondary processes in the course of the formation of X-rays. It is therefore meaningful to also provide the bottom side of the main body with a lower discharge layer. The material may be the same as that of the upper discharge layer.

[0033] According to a preferred embodiment of the invention, a short-circuit protective layer is provided on the main body within each of the apertures, which short-circuit protective layer extends from the bottom side of the main body with the lower discharge layer up to the first electrode and comprises or consists of a material with a low conductivity, so that a short circuit between the discharge layer and the electrode is avoided during operation of the multi-aperture array. A suitable material for the short-circuit protective layer is again, for example, a metal with a high surface resistance, such as tungsten, or a very low doped semiconductor material, such as silicon. The advantageous application of a short-circuit protective layer when using a main body made of glass is quite simple compared to the application of insulation layers on conductor tracks and electrodes per se according to the prior art. The short-circuit protective layer is also a layer that is directly accessible from the outside or within the apertures; it is not arranged geometrically complex within the main body.

[0034] According to a preferred embodiment of the invention, the main body is formed in one piece. The main body then comprises multiple apertures, preferably all apertures, each having at least the first electrode. In particular, the main body has a monolithic design here.

[0035] According to an alternative embodiment of the invention, the main body is formed in multiple pieces. The main body or the material of the main body does not therefore have to be completely contiguous in a mathematical sense. It is possible that each piece of a multi-piece main body has exactly one of the apertures having at least the first electrode. However, it is also possible that each piece of the main body has multiple apertures having the associated first electrodes. Thus, there is a certain degree of flexibility with regard to the manufacturing process of the multi-aperture array with a main body comprising glass or made of glass.

[0036] According to a preferred embodiment of the invention, the first electrodes are in the form of ring electrodes. In this case, a ring electrode is thus arranged at each one of the apertures. Only one first conductor track is then required that is associated with the respective ring electrode and that is connected to the ring electrode within the main body.

[0037] However, the present invention develops particular strengths in particular when not only exactly one, i.e. a first electrode, is provided for each aperture, but when multiple electrodes are provided at each of the apertures. This is the case, for example, when providing multipole electrodes. According to a preferred embodiment of the invention, the multi-aperture array furthermore also has a plurality of second and / or further electrodes, wherein each one of the second and / or further electrodes is arranged at one of the apertures in order to individually influence the first individual particle beam passing through the aperture during operation of the multi-aperture array. Each of the second electrodes and / or further electrodes is connected to a or the control unit. The second and / or further electrodes each have a depth TE2, TEi in the z direction that is smaller than the depth TG of the main body in the z direction, thus TE2 < TG and / or TEi < TG. In turn, the second and / or further electrodes are each embedded in the main body in such a way that they are exposed in a region adjacent to the aperture and in a manner forming the aperture and are otherwise embedded directly in the main body and thus without an electrical insulation layer. Exactly the same as what has already been stated above in connection with the plurality of first electrodes applies to the second and / or further electrodes.

[0038] According to a preferred embodiment of the invention, a deflection unit is provided in each of the apertures by means of the electrodes surrounding said apertures.

[0039] According to a preferred embodiment of the invention, a stigmation unit is provided in each of the apertures by means of the electrodes surrounding said apertures. For example, it is possible to provide a quadrupole electrode or an octupole electrode with a total of eight electrodes at each or in each aperture. The higher the number of electrodes per aperture, the more significantly the advantages of the multi-aperture array according to the invention with a main body based on glass become noticeable.

[0040] The main body itself comprises a glass or is made of a glass. According to a preferred embodiment of the invention, the main body may comprise or be made of one of the following materials: silicate glass, borate glass, borosilicate glass. The aforementioned terms are defined in the sense conventional in materials science. According to a preferred embodiment of the invention, the main body is made of the material Borofloat®. Borofloat® has outstanding technical capabilities, including exceptionally high transparency as well as thermal resistance and chemical resistance. It is ideal for use in the high-tech sector.

[0041] According to a preferred embodiment of the invention, the multi-aperture array has a carrier element. The main body is in this case arranged on the carrier element and is connected to the carrier element. In this case, the main body can be adhesively bonded to the carrier element, for example, or connected to it in another manner, provided that the electrical connection is ensured.

[0042] According to a preferred embodiment of the invention, the material of the carrier element comprises silicon or is made of silicon. Alternatively, the material of the carrier element may comprise another semiconductor material.

[0043] According to another preferred embodiment of the invention, the material of the carrier element comprises a glass or is made of a glass. The material of the carrier element may be the same as the material of the main body, but this is not necessarily the case.

[0044] According to a preferred embodiment of the invention, the carrier element has a plurality of conductor tracks arranged fully within the carrier element. In this case, the conductor tracks can be embedded directly in the carrier element when the carrier element is made of an insulating material such as a glass, for example. Otherwise, for example in the case of silicon as the material of the carrier body, the conductor tracks must be surrounded by an insulating layer when embedded in the carrier element.

[0045] According to a preferred embodiment of the invention, the main body and the carrier element together form a combination unit. In this case, at least one contact pad is arranged for each aperture in a connecting region between the main body and the carrier element. Each contact pad connects one of the conductor tracks within the main body to one of the conductor tracks within the carrier element. In this case, each contact pad is arranged fully within the combination unit and indirectly or directly embedded in the combination unit. In this embodiment variant of the invention, it is possible to avoid the bonding wire running on the outside between a conductor track in the main body made of silicon and the contact pad on the carrier body made of silicon in accordance with the prior art. In this context, the connection steps originally required with bonding wire, i.e. the external contacting of conductor tracks in the main body, are also omitted. According to a preferred embodiment of the invention, the carrier element has a top side that is oriented in the entrance direction of the first individual charged particle beams during operation of the multi-aperture array. In this case, the top side of the carrier element has a discharge layer made of a material with a high conductivity, so that charging of the carrier element is avoided during operation of the multi-aperture array.

[0046] According to another preferred embodiment of the invention, the carrier element has a bottom side that is oriented in the exit direction of the first individual charged particle beams from the multi-aperture array during operation of the multi-aperture array. In this case, the bottom side of the carrier element has a discharge layer made of a material with a high conductivity, so that charging of the carrier element is avoided during operation of the multi-aperture array.

[0047] According to a preferred embodiment of the invention, the carrier element is formed in the region of the apertures in a manner set back from the main body. The continuation of the “aperture” in the carrier element is therefore wider than the actual aperture. Setting back the carrier element in this case can prevent interference by means of the carrier element.

[0048] The exemplary embodiments described above in accordance with the first aspect of the invention can be combined with one another in full or in part, provided that no technical contradictions arise as a result.

[0049] In accordance with a second aspect of the invention, the latter relates to a multiple particle beam system comprising at least one multi-aperture array as described above in a plurality of embodiment variants. It is possible to align multiple multi-aperture arrays with one another and to provide same in succession so that the first individual charged particle beams pass through the multiple multi-aperture arrays in succession and the individual particle beams are manipulated by the multi-aperture arrays.

[0050] According to a preferred embodiment of the invention, the multiple particle beam system is a multi-beam particle microscope.

[0051] According to an alternative embodiment of the invention, the multiple particle beam system is a lithography system.

[0052] Of course, the multiple particle beam system may also have a different configuration. The invention will be understood even better with reference to the accompanying figures. In the figures:

[0053] Figure 1 : schematically shows a multi-beam particle beam system;

[0054] Figure 2: schematically shows the structure of a micro-optical unit;

[0055] Figure 3: schematically shows a plan view of a multi-aperture array;

[0056] Figure 4: schematically shows a section of a multi-aperture array in a sectional view, where the main body is made of a semiconductor material;

[0057] Figure 5: schematically shows a section of a multi-aperture array in a sectional view, where the main body is made of a glass;

[0058] Figure 6: schematically shows a ring electrode and a quadrupole electrode in a top view;

[0059] Figure 7: schematically shows a top view of an octupole electrode; and

[0060] Figure 8: schematically shows a section through a multi-aperture array having a main body made of glass.

[0061] Fig. 1 schematically shows a multiple particle beam system 1 in the form of a multi-beam particle microscope 1. The multi-beam particle microscope 1 comprises a beam-generating apparatus 300 having a particle source, for example an electron source. By means of the beam-generating apparatus 300, charged particles or electrons are generated for example by means of thermal field emission. The emitted charged particles form a divergent particle beam 309, and the latter is collimated by a sequence of condenser lenses 303.1 and 303.2 and incident on a multi-beam particle generator 305 having a multi-aperture arrangement. The multi-beam particle generator 305 comprises multiple multi-aperture plates 304, 306 and a field lens 307. The multi-beam particle generator 305 generates a multiplicity of individual particle beams 3 or individual electron beams 3, which are arranged in a field, which is imaged onto a further field formed by beam spots 5 in the object plane 101. The pitch between centre points of apertures in a multi-aperture plate 306 can be for example 5 pm, 100 pm and 200 pm. The diameters D of the apertures are smaller than the pitch between the centre points of the apertures; examples of the diameters are 0.2 times, 0.4 times and 0.8 times the pitches between the centre points of the apertures.

[0062] The multi-aperture arrangement 305 and the field lens 308 are configured to generate a multiplicity of focal points 323 of primary beams 3 in a grid arrangement on a surface 321 . The surface 321 need not be a plane surface but rather can be a spherically curved surface in order to account for an image field curvature of the subsequent particle-optical system. The multi-beam particle microscope 1 furthermore comprises a system of electrostatic and magnetic field lenses 103 and an objective lens 102, which image the beam foci 323 from the intermediate image surface 321 into the object plane 101 with reduced size. In between, the first individual particle beams 3 pass through the beam splitter 400 and a collective beam deflection system 500, by means of which the multiplicity of first individual particle beams 3 are deflected during operation and the image field is scanned. The first individual particle beams 3 incident in the object plane 101 form for example a substantially regular field, wherein pitches between adjacent incidence locations 5 can be for example 1 pm, 10 pm or 40 pm. The field formed by the incidence locations 5 can have a rectangular or hexagonal symmetry, for example.

[0063] The object 7 to be examined may be of any desired type, for example a semiconductor wafer or a biological sample, and may comprise an arrangement of miniaturized elements or the like. The surface 15 of the object 7 is arranged in the object plane 101 of the objective lens 102. The objective lens 102 may comprise one or more electron-optical lenses. For example, this may be a magnetic objective lens and / or an electrostatic objective lens.

[0064] The primary particles 3 incident on the object 7 generate interaction products, for example secondary electrons, backscattered electrons or primary particles, which have experienced a reversal of movement for other reasons, and these interaction products emanate from the surface of the object 7 or from the first plane 101 or object plane 101 . The interaction products emanating from the surface 15 of the object 7 are shaped by the objective lens 102 to form secondary particle beams 9. In the process, the secondary beams 9 pass through the beam splitter 400 downstream of the objective lens 102 and are supplied to a projection system 200. The projection system 200 comprises an imaging system 205 with projection lenses 206, 208 and 210, a contrast stop 214 and a multi-particle detector 207. The incidence locations 25 of the second individual particle beams 9 on the detection regions of the multi-particle detector 207 are located with a regular pitch in a third field. Exemplary values are 10 pm, 100 pm and 200 pm.

[0065] The multi-beam particle microscope 1 furthermore comprises a computer system or control unit or controller 10, which in turn can be embodied integrally or in multipartite fashion and which is designed both to control the individual particle-optical components of the multi-beam particle microscope 1 and to evaluate and analyse the signals obtained by the multi-detector 207 or detection unit. The multi-aperture array according to the invention can be integrated into the multiple particle beam system 1 shown in Figure 1.

[0066] Further information relating to such multi-beam particle beam systems or multi-beam particle microscopes 1 and component parts used therein, such as, for instance, particle sources, multi-aperture plate and lenses, can be obtained from the international patent applications WO 2005 / 024881 A2, WO 2007 / 028595 A2, WO 2007 / 028596 A1 , WO 2011 / 124352 A1 and WO 2007 / 060017 A2 and the German patent applications DE 102013016 113 A1 and DE 102013 014976 A1 , the disclosure of which is fully incorporated by reference in the present application.

[0067] The multi-aperture arrangement 305 forms a micro-optical unit 305, by means of which, in the example shown, during operation of the multiple particle beam system 1 , the plurality of first individual particle beams 3 are initially created at the first of the multi-aperture plates (so-called filter plate 304) and also actively formed at further multi-aperture plates or multi-aperture arrays. The micro-optical unit 305 itself can be configured differently here. In particular, at least one multi-aperture array of the micro-optical unit can be formed in accordance with the invention and have a main body comprising a glass or being made of a glass.

[0068] Figure 2 shows by way of example a micro-optical unit 305 in the form of a multi-beam generator 305. In the example shown, the multi-beam generator 305 comprises a sequence with six multi-aperture plates 304, 306.1 , 306.2, 306.3, 306.4 and 310 and an optional global lens electrode 307 in the z direction, which corresponds to the direction of propagation of the individual particle beams 3. Each of the multi-aperture plates 304, 306.1 to 306.4 and 310 comprises a plurality of apertures 351 , through which each of the plurality of individual particle beams 3 pass. The cross section through the apertures 351 is not to scale in Figure 2.

[0069] The plurality of multi-aperture plates 304, 306.1 , 306.2, 306.3, 306.4 and 310 are spaced apart from one another by spacers 93.1 to 93.5. Moreover, a spacer 96 is provided between the final multi-aperture plate 310 and the global lens electrode 307. As a result of the incidence of a collimated particle or electron beam 309, the plurality of first individual particle beams 3 are generated during the passage through the first multi-aperture plate 304, which is also referred to as filter plate or pre-aperture plate. The pre-aperture plate 304 comprises a metallic layer 99 on its beam input side, for stopping and absorbing the electrons of the electron beam 309 incident thereon around the plurality of the apertures 85. The material of the pre-aperture plate 304 is produced in the example shown from a conductive material, for example from doped silicon, and is at earth potential. In the example shown in Figure 2, the next multi-aperture plate is a multi-stigmator plate 306.1 . The multi-stigmator plate 306.1 comprises a plurality of four or more electrodes 82, for example eight electrodes, for each of the apertures. During the operation of the multi-beam particle microscope 1 , different voltages, for example ranging between -20 V and +20 V, can be applied to each of these electrodes and hence individually influence each individual particle beam 3. For example, it is possible with an antisymmetric voltage difference to deflect each individual particle beam 3 up to a few pm in each direction in order to pre-correct a distortion correction of the illuminating unit. An astigmatism pre-correction for each individual particle beam 3 can likewise be undertaken. By means of an offset voltage, each multi-pole element can additionally act as an Einzel lens. The multi-stigmator plate 306.1 may comprise a multiaperture array according to the invention, but it may also be produced according to the prior art on a semiconductor basis or on a silicon basis.

[0070] In principle, the multi-aperture plates 306.2, 306.3 and 306.4 may be any desired trajectory correction plates made of a conductive material, with monolithic design and with a respective voltage V1, V2 or V3 applied thereto in the example shown. It is also possible that the multiaperture plates 306.2, 306.3 and 306.4 form an Einzel lens array. Different apertures 351 in the same multi-aperture plate 306.2, 306.3 and 306.4 can have an identical design or different design, for example have different diameters, in order to take into account a field dependence of the correction in the trajectory correction of the individual particle beams 3.

[0071] The multi-aperture plate 310 is a two-layer multi-aperture plate and comprises a plurality of ring electrodes 81 for the plurality of apertures, wherein each ring electrode is configured to individually change or correct a focal position of the first individual particle beam 3 passing therethrough. The lower layer with the ring electrodes 81 can be formed as a multi-aperture array according to the invention, but it can also be conventionally formed on a silicon basis. The upper layer is insulated from the layer or ply with the ring electrodes 81 and is produced from a conductive material such as doped silicon, for example. However, the upper layer could also be made of a glass as main body, which eliminates the need for separate insulation.

[0072] The field lens 307 comprises a ring electrode 94, to which a high voltage of for example 3 kV to 20 kV can be applied, for example 12 kV to 17 kV. In the example shown, the field lens 307 provides a global electrostatic lens field for global focussing of the multiplicity of individual particle beams 3.

[0073] Figure 3 schematically shows a plan view of a section of a multi-aperture array. The multiaperture array may be, for example, the multi-aperture array 306.1 as illustrated in Figure 2. In the example shown, the multi-aperture array 306.1 has seven apertures 85, with each of the apertures being provided with eight electrodes, each of which forms a multipole electrode or octupole electrode. Each of the electrodes 82 can be actuated individually by means of the controller 10. This requires that each of the electrodes 82 is connected to an individual conductor track 86. Figure 3 impressively shows the complexity of the arrangement of conductor tracks 86, specifically even with only seven apertures 85. Current multi-beam particle microscopes have significantly more apertures 85, for example 61 apertures, 91 apertures or even more apertures. Multi-aperture arrays that include multipole electrodes with a plurality of electrodes 82, therefore, often include around 1000 conductor tracks 86. Electrically insulating each of these conductor tracks separately is elaborate and complex. The invention can be used to avoid this. The same applies, of course, to the insulation of the electrodes 82 in the main body 360 itself.

[0074] Figure 4 schematically shows a section of a multi-aperture array 306 in a sectional view, wherein the main body 360 of the multi-aperture array 306 is made of a semiconductor material, for example silicon. The multi-aperture array 306 may be, for example, a multi- stigmator; Figure 4 then accordingly illustrates a stigmator. In this example, the electrodes 82 are not directly embedded in the main body 360, but are surrounded by an electrical insulation layer 83 within the main body 360. The electrode 82 or the electrodes 82 is or are exposed only in the interior of the aperture 351. In the example shown, a connecting wire 87 is arranged at the point at which the conductor track 86, which contacts the electrode 82, exits from the main body 360. This connecting wire 87 leads to a contact pad 398 arranged on a carrier element 390. However, here too, the contact pad 398 must be insulated from the carrier element 390 by means of an insulation layer 397, since the carrier element 390 is also made of silicon and thus of a semiconductor material. A discharge layer 371 is arranged on the top side 370 of the main body 360 in order to discharge charged particles incident thereon. The same applies to the bottom side 380 of the main body 360, on which a discharge layer 381 is arranged. This layer continues in the side region and on the bottom side of the carrier element 390.

[0075] Figure 5 schematically shows a section of a multi-aperture array 350 in a sectional view, where the main body 360 is made of a glass in accordance with the invention. This glass may be, for example, a silicate glass, a borate glass or a borosilicate glass. A particularly preferred material is Borofloat®. The main body 360 made of glass is an insulator by nature, and so separate insulation layers are not required in the region of the electrodes 82 and in the region of the conductor tracks 86 within the main body 360.

[0076] The electrodes 82 illustrated in Figure 5 should be understood purely as exemplary. In principle, a multi-aperture array 350 according to the invention may have only one first plurality of first electrodes or it may also have a second plurality of second electrodes and / or a further plurality of further electrodes. In any case, it is such that the first electrodes 82 individually influence the respective individual particle beam 3 passing through the aperture 351. Each of the first electrodes 82 is connected to a control unit 10 (not explicitly shown in Figure 5).

[0077] The main body 360 has a first depth TG in the z direction along which the first apertures 351 extend through the main body 360. The first electrodes 82 each have a depth TE in the z direction that is smaller than the depth TG, that is to say TE < TG. The first electrodes 82 are each embedded in the main body 360 in such a way that they are exposed in a region adjacent to the aperture 351 and in a manner forming the aperture 351 and are otherwise embedded directly in the main body 360 and thus without an electrical insulation layer. In the example shown, the material of the main body is made of a glass. Alternatively, the material of the main body 360 may comprise a glass.

[0078] In the example shown, the first electrode 82.1 and the second electrode 82.2 of the aperture 351 shown as an example are each connected to an associated first conductor track 86 within the main body 360. In this case, the first conductor tracks 86 are each directly embedded in the main body and embedded in particular completely in the main body. In the example shown, the conductor tracks 86 are formed at an angle in the main body 360. A conductor track 86 runs from the electrode 82 first in the z direction and further away from the aperture 351 , then in a direction orthogonal to the z direction. In the example shown, this is the y direction.

[0079] In the example shown, the main body 360 furthermore has a top side 370 that is oriented in the entrance direction of the first individual charged particle beams 3 during operation of the multi-aperture array. The top side 370 of the main body 360 has an upper discharge layer 371 made of a material with a high conductivity. This prevents charging of the main body 360 and of the multi-aperture array 350 overall during operation of the multi-aperture array 350. Possible materials for the upper discharge layer 371 are gold, copper, platinum, or titanium nitride. The electrode 82 or the electrodes 82 can have a higher voltage applied to them than is the case in a design of the main body 360 with a semiconductor material such as silicon, for example. Conversely, however, it is then possible that there is a discharge or a short circuit between the electrode 82 or the electrodes 82 and the upper discharge layer 371 during operation. For this reason, in the embodiment variant shown in Figure 5, a short-circuit protective layer 372 is provided, which extends from the top side of the main body 360 with the upper discharge layer 371 up to the electrode 82 or up to the electrodes 82. The short-circuit protective layer 372 comprises or is made of a material with a low conductivity. It may comprise, for example, a metal with a high surface resistance, such as tungsten, or a very low doped semiconductor material, such as silicon.

[0080] The same also applies to the bottom side 380 of the main body 360: The bottom side 380 of the main body 360 has a lower discharge layer 381 made of a material with a high conductivity, so that charging of the main body 360 is avoided during operation of the multi-aperture array 350. In turn, a short-circuit protective layer 382 extends from the bottom side 380 of the main body 360 with the lower discharge layer 381 up to the electrode 82 or up to the electrodes 82, so that a short circuit between the lower discharge layer 381 and the electrode 82 or the electrodes 82 is avoided during operation of the multi-aperture array 350. Of course, multiple sections or short-circuit protective layers can then also be provided on the main body 360. This depends on the number of electrodes 82. Conversely, it is also possible to provide the short- circuit protective layers 372, 382 annularly and the upper and / or lower region of the apertures 351 as a circumferential lining.

[0081] In the example shown in Figure 5, the main body is again arranged on a carrier element 390. The material of the carrier element 390 can be selected to be different. For example, the material of the carrier element 390 may comprise silicon or be made of silicon. However, the conductor tracks 391 within the carrier element 390 must then be insulated from the carrier element 390 (not explicitly shown in Figure 5). According to an alternative embodiment of the invention, the material of the carrier element 390 comprises a glass or is made of a glass. The material of the carrier element 390 may be the same as the material of the main body, but this is not necessarily the case.

[0082] As already stated above, the electrode 82 or the electrodes 82 in the region of the exemplarily shown aperture 351 of the multi-aperture array 350 may be formed differently. Figure 6 schematically shows two examples of this: According to Figure 6A, a quadrupole electrode comprising a total of four individual electrodes 82.1 , 82.2, 82.3 and 82.4 is provided. Figure 6A shows a sectional-plane illustration in the x,y plane when the section is carried out along the section direction A according to Figure 5. In this sectional view, the direct embedding of the electrodes 82.1 , 82.2, 82.3 and 82.4 in the main body 360 made of glass can be clearly seen. The direct embedding of the conductor tracks 86.1 , 86.2, 86.3 and 86.4 in the main body 360 made of glass can also be clearly seen. The outer shape of the main body 360 in the region of the aperture 351 , which is shown by way of example as a section from the overall multiaperture array 350, is square in the example shown in Figure 6A. However, this could also be designed differently. A discharge layer 379 is arranged outside or laterally in the region of the main body 360 in the example shown in order to avoid charging processes of the main body or to discharge charged particles incident on its top side 370.

[0083] Figure 6B in turn shows an alternative example only as a section from a multi-aperture array: In this case, the electrode 82 embedded directly in the main body 360 made of glass is formed as a ring electrode. This is arranged in a circle around the centre point M around the aperture 351 . Also visible is the conductor track 86, which allows the electrode 82 to have voltage applied to it individually. The shape of the main body 360 around the aperture 351 is formed in a circular shape in the example shown. In turn, a discharge layer 379 is provided in the circumferential direction.

[0084] Figure 7 schematically shows another example of an arrangement of electrodes within the main body 360: In the example shown, an octupole electrode with eight individual electrodes 82.1 to 82.8 is shown. These are arranged in segment shapes around the centre point M of the aperture 351. Due to their direct embedding in glass, the electrodes 82.1 to 82.8 are already insulated from one another. The respective conductor tracks 86.1 to 86.8 are also directly embedded in the main body 360 made of glass. In each case, one conductor track 86. i supplies voltage to exactly one electrode 82. i. individually. A discharge layer 379 is again provided on the outside circumferentially around the main body 360.

[0085] It is pointed out once again that the sectional illustration in Figures 6A, 6B and 7 is identical in each case and corresponds to the situation shown in Figure 5.

[0086] Figure 8 schematically shows a section through a multi-aperture array 350 having a main body 360 made of glass. The main body 360 is arranged on a carrier element 390. The details of both the main body 360 and the carrier element 390 correspond to the details as have already been described in detail in connection with Figure 5. Figure 8, however, additionally facilitates the understanding of the entire structure of the multi-aperture array 350. In the example shown, the main body 360 is formed in multiple pieces. The main body or the material of the main body 360 does not therefore have to be completely contiguous in the mathematical sense. It is possible that each piece of a multi-piece main body 360 has exactly one of the apertures 351 having at least the first electrode 82. However, it is also possible that each piece of the main body 360 has multiple apertures 351 having the associated first electrodes 82. Thus, there is a certain degree of flexibility with regard to the manufacturing process of the multi-aperture array 350 with a main body 360 comprising a glass or made of glass.

[0087] Alternatively, it is possible that the main body 360 is formed in one piece. The main body 360 then comprises multiple apertures 351, preferably all apertures 351 , each having at least the first electrode 82. For example, the main body 360 has a monolithic design here.

[0088] The exemplary embodiments of the invention described in the figures should not be construed as limiting for the invention but instead merely serve for better understanding thereof.

[0089] List of reference signs

[0090] 1 Multiple particle beam system, multi-beam particle microscope

[0091] 3 Primary particle beams, first individual particle beams

[0092] 5 Beam spots, incidence locations

[0093] 7 Object, sample, wafer

[0094] 9 Secondary particle beams, second individual particle beams

[0095] 10 Computer system, controller

[0096] 15 Sample surface, wafer surface

[0097] 25 Image point of a second individual particle beam

[0098] 81 Ring electrode

[0099] 82 Multi-pole electrode

[0100] 83 Electrical insulation layer

[0101] 84 Semiconductor layer, silicon layer

[0102] 85 Aperture

[0103] 86 Conductor track

[0104] 87 Connecting wire

[0105] 93 Spacer

[0106] 94 Ring electrode

[0107] 96 Spacer

[0108] 99 Absorbing and conductive layer

[0109] 101 Object plane

[0110] 102 Objective lens

[0111] 103 Field lens

[0112] 105 Axis Beam crossover

[0113] Detector system

[0114] Projection lens system

[0115] Projection lens

[0116] Multi-particle detector

[0117] Projection lens

[0118] Projection lens

[0119] Beam crossover, crossover in the projection path

[0120] Aperture filter, contrast stop

[0121] Collective anti-deflection system

[0122] Beam-generating apparatus

[0123] Particle source

[0124] Collimation lens system

[0125] Multi-aperture plate, multi-aperture array, filter plate, pre-aperture plate

[0126] Micro-optical unit, multi-aperture arrangement, multi-beam particle generator

[0127] Multi-aperture plate, multi-aperture array

[0128] Field lens

[0129] Field lens

[0130] Particle beam

[0131] Multi-aperture plate

[0132] Intermediate image plane

[0133] Beam foci

[0134] Holding region

[0135] Membrane region

[0136] Multi-aperture plate, multi-aperture array

[0137] Aperture

[0138] Main body

[0139] Top side of the main body

[0140] Upper discharge layer

[0141] Short-circuit protective layer

[0142] Lateral discharge layer

[0143] Bottom side of the main body

[0144] Lower discharge layer

[0145] Short-circuit protective layer

[0146] Contact pad

[0147] Carrier element

[0148] Conductor track 392 T op side of the carrier body

[0149] 393 Discharge layer

[0150] 394 Bottom side of the carrier body

[0151] 395 Discharge layer

[0152] 396 Discharge layer

[0153] 397 Insulation layer

[0154] 398 Contact pad

[0155] 400 Beam splitter, magnet arrangement

[0156] 500 Scan deflector

[0157] 600 Displacement stage or positioning device

[0158] TE Depth of the electrode in the z direction TG Depth of the main body in the z direction M Centre point of an aperture x Direction y Direction z Direction

[0159] A Section direction

Claims

23Patent claims1. Multi-aperture array for manipulating a plurality of first individual charged particle beams, comprising the following: a main body having a plurality of apertures, wherein in each case one of the first individual charged particle beams passes through one aperture during operation of the multiaperture array; at least a plurality of first electrodes, wherein each one of the first electrodes is arranged at one of the apertures in order to individually influence the first individual particle beam passing through the aperture, and wherein each one of the first electrodes is connected to a control unit; wherein the main body has a first depth TG in a z direction along which the first apertures extend through the main body; wherein the first electrodes each have a depth TE in the z direction that is smaller than the depth TG, thus TE < TG; wherein the first electrodes are each embedded in the main body in such a way that they are exposed in a region adjacent to the aperture and in a manner forming the aperture and are otherwise embedded directly in the main body and thus without an electrical insulation layer; and wherein the material of the main body comprises a glass or is made of a glass.

2. Multi-aperture array according to the preceding claim, wherein each of the first electrodes is connected to an associated first conductor track within the main body; and wherein the first conductor tracks are each directly embedded in particular completely in the main body.

3. Multi-aperture array according to the preceding claim, wherein each of the first conductor tracks in the main body has an angled embodiment and on the one hand runs in the z direction and on the other in a direction orthogonal to the z direction.

4. Multi-aperture array according to any of the preceding claims, wherein the main body has a top side that is oriented in the entrance direction of the first individual charged particle beams during operation of the multi-aperture array,wherein the top side of the main body has an upper discharge layer made of a material with a high conductivity, so that charging of the main body is avoided during operation of the multi-aperture array.

5. Multi-aperture array according to the preceding claim, wherein a short-circuit protective layer is provided on the main body within each of the apertures, which short-circuit protective layer extends from the top side of the main body with the upper discharge layer up to the first electrode and comprises or is made of a material with a low conductivity, so that a short circuit between the upper discharge layer and the electrode is avoided during operation of the multi-aperture array.

6. Multi-aperture array according to any of the preceding claims, wherein the main body has a bottom side that is oriented in the exit direction of the first individual charged particle beams from the multi-aperture array during operation of the multi-aperture array, wherein the bottom side of the main body has a lower discharge layer made of a material with a high conductivity, so that charging of the main body is avoided during operation of the multi-aperture array.

7. Multi-aperture array according to the preceding claim, wherein a short-circuit protective layer is provided on the main body within each of the apertures, which short-circuit protective layer extends from the bottom side of the main body with the lower discharge layer up to the first electrode and comprises or consists of a material with a low conductivity, so that a short circuit between the lower discharge layer and the electrode is avoided during operation of the multi-aperture array.

8. Multi-aperture array according to any of the preceding claims, wherein the main body is formed in one piece.

9. Multi-aperture array according to any of Claims 1 to 7, wherein the main body is formed in multiple pieces.

10. Multi-aperture array according to any of the preceding claims, wherein the first electrodes are in the form of ring electrodes.

11. Multi-aperture array according to any of Claims 1 to 9, which also has a plurality of second and / or further electrodes,wherein each one of the second and / or further electrodes is arranged at one of the apertures in order to individually influence the first individual particle beam passing through the aperture, and wherein each of the second and / or further electrodes is connected to a control unit; wherein the second and / or further electrodes each have a depth TE2, TEi in the z direction that is smaller than the depth TG, thus TE2 < TG and / or TEi < TG; and wherein the second and / or further electrodes are each embedded in the main body in such a way that they are exposed in a region adjacent to the aperture and in a manner forming the aperture and are otherwise embedded directly in the main body and thus without an electrical insulation layer.

12. Multi-aperture array according to the preceding claim, wherein a deflection unit is provided in each of the apertures by means of the electrodes surrounding said apertures.

13. Multi-aperture array according to any of Claims 11 to 12, wherein a stigmation unit is provided in each of the apertures by means of the electrodes surrounding said apertures.

14. Multi-aperture array according to any of the preceding claims, wherein the main body comprises or is made of one of the following materials: silicate glass, borate glass, borosilicate glass.

15. Multi-aperture array according to any of the preceding claims, wherein the material of the main body is made of Borofloat®.

16. Multi-aperture array according to any of the preceding claims, wherein the multi-aperture array has a carrier element; and wherein the main body is arranged on the carrier element and is connected to the carrier element.

17. Multi-aperture array according to the preceding claim, wherein the material of the carrier element comprises silicon or is made of silicon.

18. Multi-aperture array according to the preceding claim, wherein the carrier element has a plurality of conductor tracks arranged fully within the carrier element; andwherein the conductor tracks are indirectly embedded in the carrier element in a manner surrounded by an insulating layer.

19. Multi-aperture array according to Claims 2 and 18, wherein the main body and the carrier element together form a combination unit; wherein at least one contact pad is arranged for each aperture in a connecting region between the main body and the carrier element, wherein each contact pad connects one of the conductor tracks within the main body to one of the conductor tracks within the carrier element; and wherein each contact pad is arranged fully within the combination unit and embedded in the combination unit.

20. Multi-aperture array according to Claim 16, wherein the material of the carrier element comprises a glass or is made of a glass.

21. Multi-aperture array according to the preceding claim, wherein the carrier element has a plurality of conductor tracks arranged fully within the carrier element; and wherein the conductor tracks are directly embedded in the carrier element.

22. Multi-aperture array according to Claims 2 and 21 , wherein the main body and the carrier element together form a combination unit; wherein at least one contact pad is arranged for each aperture in a connecting region between the main body and the carrier element, wherein each contact pad connects one of the conductor tracks within the main body to one of the conductor tracks within the carrier element; and wherein each contact pad is arranged fully within the combination unit and directly embedded in the combination unit.

23. Multi-aperture array according to any of Claims 16 to 22, wherein the carrier element has a top side that is oriented in the entrance direction of the first individual charged particle beams during operation of the multi-aperture array, and wherein the top side of the carrier element has a discharge layer made of a material with a high conductivity, so that charging of the carrier element is avoided during operation of the multi-aperture array.

24. Multi-aperture array according to any of Claims 16 to 23,27 wherein the carrier element has a bottom side that is oriented in the exit direction of the first individual charged particle beams from the multi-aperture array during operation of the multi-aperture array, wherein the bottom side of the carrier element has a discharge layer made of a material with a high conductivity, so that charging of the carrier element is avoided during operation of the multi-aperture array.

25. Multi-aperture array according to any of Claims 16 to 24, wherein the carrier element is formed in the region of the apertures in a manner set back from the main body.

26. Multiple particle beam system having at least one multi-aperture array according to any of the preceding claims.

27. Multiple particle beam system according to Claim 26, wherein the multiple particle beam system is a multi-beam particle microscope.

28. Multiple particle beam system according to Claim 26, wherein the multiple particle beam system is a lithography system.

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