Laminate body with intermediate layer and functional layer

Abstract

The invention relates to a device (7) and to a method that can be carried out therewith for producing a laminate body (1) having a functional layer (2), wherein the laminate body (1) is designed in the form of a layer structure, comprising at least one substrate (3) in the form of a plate and having a substrate surface (4) and a functional layer (2) made of a first material, wherein the method comprises the following steps: heating the substrate surface (4) or a first sub-region of the substrate surface (4); growing an intermediate layer (5) made of aluminum nitride (AlN) on the substrate surface (4); growing the functional layer (2) made of the first material.

Description

[0001] Composite body with intermediate layer and functional layer

[0002] The invention relates to a device and a method for producing a composite body, particularly for use in the manufacture of electronic or optoelectronic components. In particular, the invention relates to a method for growing organic and / or inorganic layers onto planar and / or structured layers and for structuring such produced layers. The composite body is designed as a layered structure and comprises at least one substrate formed as a plate with at least one planar substrate surface and at least one substantially polycrystalline or at least one substantially monocrystalline layer, which comprises at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a metallic layer, in particular a thin metal film, or a metallic hard material.

[0003] For the growth of semiconductor layers in electronic and optoelectronic applications, a substrate serves as the nucleus. For cost reasons, it is not always possible to use a substrate made of the same material as the first layer grown.

[0004] Silicon carbide wafers are widely used, particularly in the semiconductor industry. These wafers are thin slices of cubic or hexagonal silicon carbide (SiC) used as substrates for manufacturing integrated circuits and other electronic components. A SiC wafer serves as the base material for these integrated circuits, which are found in almost all modern electronic devices, such as computers, smartphones, and cars, especially in high-performance electronics. Billions of transistors, resistors, capacitors, and other components can be fabricated on these wafers using various lithographic and chemical processes.

[0005] Silicon carbide (SiC) wafers represent a significant cost factor in the production of integrated circuits. Silicon (Si), or sometimes silicon dioxide (SiO2), and graphite (C) are used as starting materials for the production of silicon carbide. These materials are reacted together in a special reactor at high temperatures. The most important and technically challenging step in SiC wafer production is the growth of SiC single crystals. This is typically achieved using the sublimation process (also known as the Lely process or a modified PVT process – Physical Vapor Transport). The raw material (polycrystalline SiC) is heated to very high temperatures (over 2100 °C) in a reaction vessel, causing it to sublimate (transition directly from the solid to the gaseous state). The SiC gas condenses onto a specially prepared SiC substrate, forming a single-crystal SiC block or boule.The temperature in the crystal growth apparatus is precisely controlled to ensure the uniform growth of a large, defect-free crystal. This process takes several days because crystal growth is relatively slow. The result is a large SiC single crystal (also called a boule), which can be a few centimeters thick. After crystal growth, the SiC boules are sliced ​​into thin wafers. This is done using wire saws or laser saws coated with diamond dust, as SiC is an extremely hard material (almost as hard as diamond). These sawing steps must be performed with the utmost precision because the wafers need to be extremely thin (typically in the range of 50 to 600 micrometers). The freshly sawn SiC wafers have a rough surface and, after removing the sawing damage, must be polished smooth to make them suitable for semiconductor manufacturing.First, the wafers are ground and / or roughly polished to remove larger irregularities. This is followed by fine polishing, which achieves highly precise, mirror-smooth surfaces. Diamond particles or other chemical compounds are also used in this process.

[0006] This polishing process is crucial for the quality of the subsequent electronic components, as surface impurities or crystal defects can negatively impact the performance of the semiconductor devices. An additional epitaxial layer is applied to the polished SiC wafers. This step, known as epitaxy, serves to grow an extremely pure, defect-free, and precisely doped crystal layer on the wafer, which is essential for the subsequent semiconductor process. Finally, the wafers are inspected for defects, thickness, surface roughness, and other quality parameters. Sophisticated optical and electronic methods (e.g., X-ray analysis, optical microscopy) are employed to ensure that the wafers meet the stringent requirements for semiconductor production.The high cost of manufacturing SiC wafers results from a combination of expensive raw materials, energy-intensive and high-precision manufacturing processes, and the need to maintain high quality standards, amounting to approximately 50% of the manufacturing cost of a high-performance electronic component. Each step in the manufacturing process requires specialized equipment and highly skilled personnel, further increasing the overall cost.

[0007] This invention aims to circumvent the previously described manufacturing process for wafers used in the production of integrated circuits. Semiconductor material is grown on a foreign substrate to provide a wafer with a top layer of semiconductor material for further use in the production of integrated circuits. The growth of such a layer is understood to involve, in particular, plasma-enhanced chemical vapor deposition (CVD), reactive physical vapor deposition (PVD), or a combination of both processes, which are hereinafter collectively abbreviated as CVD / PVD, specifically in a dedicated inline coating system. Such systems are known from the prior art, for example from EP 2 521 804 B1, so that more detailed design options or...Definitions of plant components, such as a process chamber, are not discussed further here.

[0008] In the context of the invention, a composite body shall be understood to be a layered structure comprising at least a substrate formed as a plate with at least one flat substrate surface and at least one substantially polycrystalline or at least one substantially single-crystal layer comprising at least one compound semiconductor, a 2D layer, a ceramic material, an amorphous layer, a metallic layer, in particular a metal thin film, or a metallic hard material.

[0009] In this context, a 2D layer refers to a crystalline material consisting of only a single layer of atoms or molecules. Examples include graphene, two-dimensional boron nitride, and molybdenum disulfide. A ceramic material, in this context, refers specifically to a non-oxide ceramic material. Examples include silicon nitride (SiSiS₂) and boron carbide (B₄C).

[0010] In this context, an amorphous layer refers to a non-crystalline structure. Examples include diamond-like carbon layers (DLC) and glass.

[0011] In this context, a metal thin film refers to a metal layer that can consist of, for example, a single metal, metal compounds, or sequences of metal layers. This layer or sequence can be ohmic or configured as a Schottky rectifier diode layer or Schottky barometer diode layer. For example, in a gallium nitride-based (GaN-based) transistor structure, the metal layer sequence titanium, aluminum, nickel, and gold is used for the ohmic contact.

[0012] In this context, a metallic hard material is understood to be, in particular, a layer with a Vickers hardness of more than 1000 VH and / or a Mohs hardness of more than 9.0, which exhibits a predominant proportion of metallic bonds. For example, titanium nitride (TiN) is included among the material components of a metallic hard material.

[0013] The aim is to grow semiconductor material on a foreign substrate in order to provide a wafer with a top layer of semiconductor material for further use in the production of integrated circuits.

[0014] The growth of semiconductor material on a foreign substrate that has a similar crystal lattice symmetry to the semiconductor material being grown is called heteroepitaxy, in contrast to homoepitaxy. Due to only slightly different lattice parameters of the substrate and the first layer of material, defects, known as dislocations, occur in the grown layer. These dislocations negatively affect the performance and lifetime of the device. From EP 3 071 725 B1 and EP 3 696 300 A1 of the applicant, methods are known whose purpose is to reduce the dislocation density in layers grown by heteroepitaxy. The basic idea is that small areas on the surface of the substrate are masked. At these locations, the growing layer receives no growth information, and these areas are filled in from the sides.The documents cited at the beginning already mention sapphire as a substrate in connection with the known process from DE 10 2013 112 785 B3. In this known process, a substrate is first heated and cleaned, then the substrate surface is terminated, and at least one layer is grown on it by supplying material components via a material source. A disadvantage of this process is that the quality and growth rate of the layer grown on the substrate are limited, among other things, by the type of material source.

[0015] It is already known from the aforementioned documents that aluminum nitride (AlN) can be grown on sapphire as a substrate using CVD. Furthermore, it has been shown that AlN and SiC exhibit very small lattice mismatches. However, this SiC-on-AlN layer sequence cannot be achieved using standard CVD due to the high deposition temperature required for SiC (1700°C), as the structure of AlN is altered at this high temperature.

[0016] In semiconductor technology, particularly in CVD, a small lattice mismatch refers to a small discrepancy in the lattice constants between two materials being deposited on top of each other. The term lattice constant refers to the distances between atoms in a crystal lattice. Different materials have different lattice constants. When two materials with different lattice constants are deposited on top of each other, stresses can occur in the material because the atoms are not perfectly aligned. These stresses can cause defects such as dislocations, which can affect the material properties; this is known as lattice mismatch. A small lattice mismatch means that the difference in lattice constants between the substrate and the deposited material is small. This generally results in fewer structural defects and better material properties.However, the growth conditions must be carefully controlled to ensure that the resulting stresses do not negatively affect the material.

[0017] In practice, a small lattice mismatch is desirable because it allows layers of different materials, for example in heterostructures, to be deposited on top of each other with minimal defects, and thus the epitaxial layer can be independent of the substrate.

[0018] The object of the present invention was to overcome the disadvantages of the prior art and to provide a method and a device by which a composite body with semiconductor layers for electronic and optoelectronic applications, in particular for use in the manufacture of integrated circuits, can be produced simply and cost-effectively.

[0019] The object of the invention is solved by a method and a device according to the claims.

[0020] The inventive method for producing a composite body with a functional layer or for further use in producing an electronic or optoelectronic component, wherein the composite body is designed as a layer structure, comprises

[0021] - at least a substrate formed as a plate with a substrate surface and

[0022] - a functional layer of a first material comprising at least a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer or a metallic layer, in particular a metal thin film or a metallic hard material, the method comprising the following steps:

[0023] - Heating the substrate surface or a first part of the substrate surface to a temperature of at least room temperature, specifically 20°C, and at most 550°C;

[0024] - Growth of the functional layer from the first material;

[0025] - wherein, prior to the growth of the functional layer, an intermediate layer is grown directly onto the substrate surface, the intermediate layer being formed from aluminum nitride (AIN). In the context of the inventive process, the term "growth" means that atoms or molecules are applied, deposited, or shaped by means of CVD or PVD or by means of a combination of these two processes, or are deposited on a surface, in particular the substrate surface.

[0026] In this context, the substrate is understood to be a plate made of a second material, whereby it may be particularly advantageous for the substrate to be selected from a second material list comprising aluminum oxide or sapphire (Al2O3), silicon (Si), germanium (Ge), zinc oxide (ZnO), zirconium dibornite or diamond.

[0027] Furthermore, it may be advantageous to select the first material from an initial list of materials, including silicon carbide (SiC), gallium nitride (GaN), GaN-HEMT, GaN-LED, GaN-Solar, diamond, poly-SiC, in particular by means of tris(dimethylamino)silanes (TDAS).

[0028] GaN-HEMT, GaN-LED and GaN-Solar are specific applications of (GaN) in semiconductor technology.

[0029] GaN HEMT is a special type of transistor based on GaN. HEMTs are high-frequency transistors known for their high electron mobility. GaN HEMTs are widely used in applications requiring high frequencies and power densities, such as mobile phone base stations, radar systems, satellite communications, and power electronics. They offer high efficiency, fast switching times, and the ability to handle high voltages and currents. They are particularly useful in applications where conventional silicon transistors reach their limits. They leverage the high electron mobility of GaN to enable faster switching times and improved performance, especially at high frequencies and power levels.

[0030] GaN LEDs are light-emitting diodes based on GaN. These LEDs are widely used in various lighting applications. They are particularly well-known for their use in blue LEDs, which are combined with phosphors to produce white light. This has led to significant advances in lighting technology, including the development of energy-efficient white LED lamps. They offer high brightness, energy efficiency, and a long lifespan. They are also more robust and can be used in a wide variety of applications, from flashlights and televisions to streetlights. GaN LEDs emit light when electrons and holes recombine in the GaN layer, or more specifically, the InGaN / GaN layer, releasing energy in the form of light. The specific color of the light depends on the exact composition and properties of the GaN layer.

[0031] Poly-SiC stands for polycrystalline SiC, a material with imperfectly aligned SiC crystals. Tris(dimethylamino)silane (TDAS) is a chemical compound used in semiconductor and materials science. Its chemical formula is [Si(N(CH3)2)3], and it is frequently used as a SiC source in thin-film deposition, particularly in processes such as CVD. Poly-SiC is often produced by chemical deposition processes like CVD, in which a silicon carbide film is deposited onto a substrate. TDAS can be used as an n-type doped SiC source in CVD. Precise control over the process conditions allows for the production of high-quality polycrystalline SiC layers suitable for various applications in the semiconductor industry and high-performance technology.Polycrystalline silicon carbide (SiC) is used in various electronic and mechanical applications, including as a substrate material for power semiconductors, in the production of abrasive materials, and as a protective casing in aggressive environments. Due to its hardness and chemical stability, poly-SiC is particularly useful in the manufacture of components that must withstand extreme conditions.

[0032] In any case, the inventive method achieves a minimization of the lattice mismatch of the functional layer. This allows, in particular, the cost-effective production of SiC layers. A preferred embodiment of the invention is the production of a wafer with a functional SiC layer, wherein the wafer is based on a sapphire substrate and an intermediate layer of AIN. This is made possible, in particular, by applying the aforementioned CVD process or a combination of CVD and PVD, since in previous methods the AIN could not withstand the high temperatures required for the process, necessitating the use of other substrates.

[0033] Another advantageous feature is one in which a transition layer is grown before the growth of the functional layer and after the growth of the intermediate layer, so that the lattice error matching of the functional layer to the intermediate layer is reduced during the growth of the functional layer.

[0034] In particular, it is advantageous if the transition layer is selected from a third material from a third material list comprising aluminum nitride carbide (AICN), differently strained aluminum nitride (AIN), aluminum silicon nitride (AISiN), aluminum silicon carbon nitride (AISiCN), aluminum oxynitride (AION), graphene, molybdenum disulfide (M0S2), 2D boron nitride (BN) or borophene (B) or a monatomic layer of boron atoms.

[0035] According to further training, it is possible to surface-treat the coated substrate using a plasma or energy beam source immediately before the functional layer is applied. This process cleans the substrate and prepares it for the subsequent application of the functional layer. For example, the plasma or energy beam source can be used for plasma cleaning, or a plasma coating process can be used to gently polish the coated substrate, thus providing a smooth surface for the subsequent application of the functional layer.

[0036] In any case, particularly with CVD growth or growth using a mixed CVD and PVD process from SiC to AIN, various intermediate process steps are necessary to ensure good adhesion, quality, and integrity of the SiC layer. These intermediate steps are important to overcome the challenges associated with combining AIN and SiC.

[0037] A possible intermediate step is substrate cleaning and preparation. The goal of this step is to ensure that the AIN layer is clean and free of contaminants that could impair SiC growth quality. The AIN surface must be thoroughly cleaned to remove organic contaminants, dust, and other residues. This can be done by chemical cleaning or plasma treatment. In some cases, a special treatment such as plasma coating or gentle polishing, for example using a laser, may be necessary to ensure a smooth surface for SiC growth.

[0038] Another possible intermediate step is the surface preparation of the AIN layer. The aim of this step is to optimize the AIN surface to improve the adhesion of the SiC layer and minimize potential problems such as the formation of layer transitions. The AIN layer can be preheated at lower temperatures in the CVD / PVD chamber to reduce potential stresses and stabilize the layer structure. This is equivalent to a heat treatment. In some cases, it may be necessary to apply a thin layer of a suitable material between the AIN and SiC to further improve adhesion.

[0039] Another possible intermediate step is the optimization of the growth conditions for SiC. The aim of this further possible intermediate step is to ensure that the growth conditions for SiC achieve the desired film quality and structure without affecting the underlying AIN layer. This requires, among other things, precise temperature control.

[0040] Another important intermediate step, or rather a related process, is monitoring and quality control. The goal here is to monitor the growth process to ensure that the layer quality meets the requirements. For example, in-situ monitoring can be implemented. This involves monitoring the CVD / PVD process using techniques such as mass spectrometry, spectroscopy, or real-time optical inspection to ensure that conditions remain constant and the layer quality can be monitored.

[0041] Post-treatment and relaxation can be considered another important step. The aim of this step is to ensure that the layers are stable and defect-free after the growth process. Additional heat treatment may be necessary to further stabilize the SiC layer and minimize defects.

[0042] The invention further relates to a device for manufacturing electronic or optoelectronic components as composite bodies by preferably plasma-enhanced chemical vapor deposition or reactive physical vapor deposition or a combination thereof onto a substrate by a method according to one of the preceding claims, the device comprising

[0043] - a first process chamber, a first material source directed towards a substrate that can be received within the first process chamber, wherein a material stream of AIN can be generated by means of the first material source, wherein an energy beam can be introduced or acted upon in the material stream, in particular in the vicinity of the substrate, by means of one or more energy beam sources,

[0044] - a second process chamber downstream of the first process chamber in a flow direction of the substrate, a second material source directed towards a substrate that can be received within the second process chamber, wherein a second material stream can be generated from the second material by means of the second material source, wherein an energy beam can be introduced or acted upon by means of one or more energy beam sources in the material stream, in particular in the vicinity of the substrate.

[0045] It may also be provided that a fourth material source is provided within the first process chamber, whereby a fourth material stream comprising material from the second material list can be provided by means of the fourth material source.

[0046] In this context, it may be advantageous for the substrate to be selected from a second material from a second material list, comprising aluminum oxide or sapphire (Al2O3), silicon (Si), germanium (Ge), zinc oxide (ZnO), zirconium dibornite or diamond.

[0047] The term "energy beam source" can refer to, for example, a laser, a discharge lamp, a flash tube, a flash lamp (specifically an excimer laser, an excimer flash lamp, an excited dimer, an ion gun, or a magnetron). Furthermore, an energy beam source can refer to a laser that generates heat, such as a CO2 laser, a diode laser, or an Nd:YAG laser. Finally, an energy beam source can also refer to a flash lamp by means of which the energy input is achieved according to the device of the invention.

[0048] Furthermore, an energy beam source

[0049] - comprise several strip elements through which all required material components are guided individually or in smaller groups

[0050] - be designed as a strip magnetron source;

[0051] - be designed as a tube magnetron source;

[0052] - be designed as a strip evaporator;

[0053] - comprise several evaporator stations that together form a strip;

[0054] - comprise several ion cannons that together form a strip

[0055] - be designed as a stripe ion cannon;

[0056] - have a strip mask equipped with one or more slits through which the required material components exit; or

[0057] - have a strip mask that includes a sieve inlet through which the required material components exit.

[0058] The plasma source can include a microwave plasma source, an inductively coupled plasma source (ICP), a capacitively coupled plasma (CCP), a remote plasma source, a sputtering source, specifically a magnetron sputtering source, or an ion source or ion beam source.

[0059] According to further training, it is possible that the first material is selected from an initial material list, including SiC, GaN, GaN-HEMT, GaN-LED, GaN-Solar, diamond, poly-SiC, in particular by means of Tris(dimethylamino)silane TDAS.

[0060] Preferably, a wafer with a functional SiC layer is produced using the device according to the invention, wherein the wafer is based on a sapphire substrate and has an intermediate layer of AIN. This is made possible, in particular, by applying the aforementioned CVD process or the aforementioned hybrid process of CVD and PVD, since in previously applied methods the AIN could not withstand the high temperatures required for the previous process, necessitating the use of other substrates. An embodiment is also advantageous in which a plasma or energy beam source for applying a plasma coating process to the intermediate layer can be provided within the second process chamber. This allows the intermediate layer to be prepared for coating with the functional layer or a transition layer by means of the plasma or energy beam source.For example, the intermediate layer can be cleaned of impurities, dust, or other residues by plasma preparation. The intermediate layer can also be surface-treated by performing a plasma coating process or a concomitant gentle plasma polishing to provide a smooth surface for the subsequent growth of the functional layer.

[0061] According to an advantageous further development, it can be provided that within the first process chamber a third material source is formed, directed towards a substrate to be received within the second process chamber, wherein a third material stream from a third material from a third material list, comprising AICN, AISiN, AISiCN, AION, graphene, M0S2, BN or B or a monatomic layer of boron atoms, can be generated by means of the third material source.

[0062] Advantageously, it can also be provided that a respective energy source is configured as a laser, discharge lamp, flash tube, flash lamp, specifically an excimer, excimer laser, excimer flash lamp, or an excited dimer, ion gun, or magnetron, wherein a respective material source specifically comprises a respective energy source. Furthermore, an energy beam source can be understood to be a laser that generates heat, such as a CO2 laser, a diode laser, or an Nd:YAG laser. An energy beam source can also be understood to be a flash lamp by means of which the energy input is achieved according to the device according to the invention.

[0063] Furthermore, an energy beam source

[0064] - comprise several strip elements through which all required material components are guided individually or in smaller groups

[0065] - be designed as a strip magnetron source;

[0066] - be designed as a tubular magnetron source; - be designed as a strip evaporator;

[0067] - comprise several evaporator stations that together form a strip;

[0068] - comprise several ion cannons that together form a strip

[0069] - be designed as a stripe ion cannon;

[0070] - have a strip mask equipped with one or more slits through which the required material components exit; or

[0071] - have a strip mask that includes a sieve inlet through which the required material components exit.

[0072] The plasma source can include a microwave plasma source, an inductively coupled plasma source (ICP), a capacitively coupled plasma (CCP), a remote plasma source, a sputtering source, specifically a magnetron sputtering source, or an ion source or ion beam source.

[0073] To better understand the invention, it is explained in more detail with reference to the following figures.

[0074] They each show, in a highly simplified, schematic representation:

[0075] Fig. 1 shows a possible first embodiment of a composite body;

[0076] Fig. 2 shows a possible second embodiment of a composite body;

[0077] Fig. 3 shows a possible embodiment of a device for producing a composite body;

[0078] It should be noted by way of introduction that in the differently described embodiments, identical parts are provided with the same reference numerals or component designations, whereby the disclosures contained in the entire description can be applied analogously to identical parts with the same reference numerals or component designations. Furthermore, the positional designations chosen in the description, such as top, bottom, side, etc., refer to the figure directly described and illustrated, and these positional designations must be applied analogously to the new position if the position changes. Fig. 1 shows a possible first embodiment of a composite body 1 in a highly simplified, schematic representation.The composite body 1 is designed as a layered structure and comprises at least a substrate 3 designed as a plate with a substrate surface 4 and a functional layer 2 made of a first material, which comprises at least a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer or a metallic layer, in particular a metal thin film, or a metallic hard material.

[0079] Such a composite body 1 can be produced by the method according to the invention. The method comprises at least the following process steps:

[0080] - Heating the substrate surface 4 or a first sub-area of ​​the substrate surface 4 to a temperature of at least room temperature, specifically 20°C, and at most 550°C;

[0081] - Growth of an intermediate layer 5 of aluminium nitride AIN onto the substrate surface 4 using one or more energy sources;

[0082] - Growth of the functional layer 2 from the first material using one or more energy sources.

[0083] An energy source can be, for example, a laser, a discharge lamp, a flash tube, a flash lamp, specifically an excimer, an excimer laser, an excimer flash lamp, or an excited dimer, an ion gun, or a magnetron. Furthermore, an energy source can be a laser that generates heat, such as a CO2 laser, a diode laser, or an Nd:YAG laser. An energy source can also be a flash lamp by means of which the energy input is achieved according to the device according to the invention.

[0084] Furthermore, an energy beam source

[0085] - comprise several strip elements through which all required material components are guided individually or in smaller groups

[0086] - be designed as a strip magnetron source;

[0087] - be designed as a tube magnetron source;

[0088] - be designed as a strip evaporator;

[0089] - comprise several vaporizer stations that together form a strip; - comprise several ion cannons that together form a strip

[0090] - be designed as a stripe ion cannon;

[0091] - have a strip mask equipped with one or more slits through which the required material components exit; or

[0092] - have a strip mask that includes a sieve inlet through which the required material components exit.

[0093] The plasma source can include a microwave plasma source, an inductively coupled plasma source (ICP), a capacitively coupled plasma (CCP), a remote plasma source, a sputtering source, specifically a magnetron sputtering source, or an ion source or ion beam source.

[0094] In this context, it may be provided that the first material is selected from an initial material list comprising silicon carbide SiC, gallium nitride GaN, GaN-HEMT, GaN-LED or poly-SiC, in particular by means of tris(dimethylamino)silane TDAS.

[0095] It may be provided that the substrate 3 is selected from a second material from a second material list, comprising aluminum oxide or sapphire (Al2O3), silicon (Si), germanium (Ge), zinc oxide (ZnO), zirconium dibornite or diamond.

[0096] In particular, one embodiment is particularly advantageous and can also be manufactured economically with the device 7 described below, as shown in Fig. 3, in which the first material is SiC and the second material is sapphire. Thus, sapphire is used as the substrate 3, onto which an intermediate layer 5 of AIN is applied, and finally the functional layer 2 of SiC is applied.

[0097] Figure 2 shows a further, and optionally independent, second embodiment of the composite body 1, in which the same reference numerals and component designations are used for identical parts as in the preceding Figure 1. To avoid unnecessary repetition, reference is made to the detailed description in the preceding Figure 1. Figure 2 shows a possible second embodiment of a composite body 1. In this embodiment, a transition layer 6 is applied to the intermediate layer 5 before the functional layer 2 is applied. Thus, a transition layer 6 is applied before the growth of the functional layer 2 and after the growth of the intermediate layer 5, so that the lattice defect matching of the functional layer 2 to the intermediate layer 5 is reduced during the growth of the functional layer 2.

[0098] In this context, it may be particularly advantageous if the transition view is selected from a third material from a third material list comprising AICN, AISiN, AISiCN, graphene, M0S2, 2D boron nitride (BN) or borophene (B) or a monatomic layer of boron atoms.

[0099] In any case, it can also be advantageous if the coated substrate 3 is surface-treated immediately before the growth of the functional layer 2 by means of a plasma or energy beam source 15 according to the previous definition (shown in Fig. 3).

[0100] Figure 3 shows a device 7 for producing a composite body 1 in a highly simplified, schematic representation. The device 7 is suitable for producing electronic or optoelectronic components or a solid-state battery as a composite body 1, preferably by plasma-enhanced chemical vapor deposition or reactive physical vapor deposition, or a combination thereof, onto a substrate 3 by a method according to the invention as described above.

[0101] The device comprises a first process chamber 8, a first material source 9 or energy source or energy beam source directed towards a substrate 3 that can be received within the first process chamber 8, wherein a first material stream 10 from AIN can be generated by means of the first material source 9, a second process chamber 12 downstream of the first process chamber 8 in a flow direction 11 of the substrate 3, and a second material source 13 directed towards a substrate 3 that can be received within the second process chamber 12, wherein a second material stream 14 from the second material can be generated by means of the second material source 13.

[0102] Alternatively, it can also be provided that a fourth material source 18 is provided within the first process chamber 8, wherein a fourth material stream 19 comprising material from the second material list, in particular AIN, can be provided by means of the fourth material source 18 or in conjunction with the first material source 9.

[0103] Furthermore, it can be advantageous if a plasma or energy beam source 15 is provided within the second process chamber 12 for applying a plasma coating process to the intermediate layer 5. Again, a further source can be provided for the formation of the intermediate layer 5, which, however, is not shown in the present Fig. 1.

[0104] In any case, it can be provided that within the first process chamber 8 a third material source 16 is formed, directed towards a substrate 3 to be received within the second process chamber 12, wherein a third material stream 17 from a third material from a third material list, comprising AICN, AISiN, AISiCN, AION, graphene, M0S2, 2D boron nitride (BN) or borophene (B) or a monatomic layer of boron atoms, can be generated by means of the third material source 16.

[0105] The exemplary embodiments show possible embodiment variants, whereby it should be noted at this point that the invention is not limited to the specifically illustrated embodiment variants, but rather various combinations of the individual embodiment variants are also possible and this possibility of variation lies within the skill of the person skilled in this technical field due to the teaching on technical action by the present invention.

[0106] The scope of protection is defined by the claims. However, the description and drawings are to be consulted for the interpretation of the claims. Individual features or combinations of features from the different embodiments shown and described can, in themselves, represent independent inventive solutions. The problem underlying these independent inventive solutions can be found in the description. All references to value ranges in this description are to be understood as encompassing any and all sub-ranges thereof. For example, the reference 1 to 10 is to be understood as including all sub-ranges, starting from the lower limit 1 and the upper limit 10. That is, all sub-ranges begin with a lower limit of 1 or greater and end with an upper limit of 10 or less, e.g., 1 to 1.7, or 3.2 to 8.1, or 5.5 to 10.

[0107] Finally, for the sake of clarity, it should be noted that, for a better understanding of the structure, some elements have been shown not to scale and / or enlarged and / or reduced in size.

[0108] Reference numeral list

[0109] Composite body

[0110] Functional layer

[0111] substrate

[0112] substrate surface

[0113] Intermediate shift

[0114] transition layer

[0115] device

[0116] First Trial Chamber

[0117] First source of material

[0118] First material flow

[0119] Direction of flow

[0120] Second Tribunal

[0121] Second source of material

[0122] Second material stream

[0123] Plasma or energy beam source

[0124] Third source of material

[0125] Third material flow

[0126] Fourth source of material

[0127] Fourth material stream

Claims

Patent claims 1. Method for producing a composite body (1 ) with a functional layer (2) or for further use in producing an electronic or optoelectronic component, wherein the composite body (1 ) is designed as a layer structure, comprising - at least a substrate formed as a plate (3) with a substrate surface (4) and - a functional layer (2) of a first material comprising at least a compound semiconductor, a 2D layer, a ceramic material, an amorphous layer or a metallic layer, in particular a metal thin film or a metallic hard material, the method comprising the following steps: - Heating the substrate surface (4) or a first part of the substrate surface (4) to a temperature of at least room temperature, in particular 20°C, and at most 550°C; - Growth of the functional layer (2) from the first material using a material and / or energy source; characterized in that - prior to the growth of the functional layer (2), an intermediate layer (5) is grown on the substrate surface (4), the intermediate layer (5) being formed from aluminium nitride AIN.

2. Method according to claim 1, characterized in that the substrate (3) is selected from a second material from a second material list comprising aluminium oxide or sapphire (Al2O3), silicon (Si), germanium (Ge), zinc oxide (ZnO), zirconium dibornite or diamond.

3. Method according to claim 2, characterized in that the first material is selected from a first material list comprising silicon carbide (SiC), gallium nitride (GaN), GaN-HEMT, GaN-LED, GaN-Solar, diamond, poly-SiC, in particular by means of tris(dimethylamino)silane TDAS.

4. Method according to one of the preceding claims, characterized in that a transition layer (6) is grown before the growth of the functional layer (2) and after the growth of the intermediate layer (5), such that during the growth of the functional layer (2) a lattice defect matching of the functional layer (2) to the intermediate layer (5) is reduced.

5. Method according to claim 4, characterized in that the transition layer is selected from a third material from a third material list comprising aluminum nitride carbide (AICN), aluminum silicon nitride (AISiN), aluminum silicon carbon nitride (AISiCN), aluminum oxynitride (AION), graphene, molybdenum disulfide (M0S2), 2D boron nitride (BN) or borophene (B) or a monatomic layer of boron atoms.

6. Method according to one of the preceding claims, characterized in that the coated substrate (3) is surface-treated immediately before the growth of the functional layer (2) by means of a plasma or energy beam source (15).

7. Device (7) for producing electronic or optoelectronic components as composite bodies (1) by preferably plasma-enhanced chemical vapor deposition or reactive physical vapor deposition or a combination thereof onto a substrate (3) by a method according to one of the preceding claims, the device (7) comprising - a first process chamber (8), a first material source (9) directed towards a substrate (3) to be received within the first process chamber (8), wherein a first material stream (10) of AIN can be generated by means of the first material source (9), wherein an energy beam can be introduced into the material stream, in particular in the vicinity of the substrate, by means of one or more energy sources, - a second process chamber (12) downstream of the first process chamber (8) in a flow direction (11) of the substrate (3), a second material source directed towards a substrate (3) to be received within the second process chamber (12) (13) wherein a second material stream (14) can be produced from the second material by means of the second material source (13).

8. Device according to claim 7, characterized in that the substrate (3) is selected from a second material from a second material list comprising aluminium oxide or sapphire (Al2O3), silicon (Si), germanium (Ge), zinc oxide (ZnO), zirconium dibornite or diamond.

9. Device according to claim 8, characterized in that the first material is selected from a first list of materials comprising silicon carbide (SiC), gallium nitride (GaN), GaN-HEMT, GaN-LED, GaN-Solar, Diament, poly-SiC, in particular by means of tris(dimethylamino)silanes (TDAS).

10. Device (7) according to one of claims 7 to 9, characterized in that a plasma or energy beam source (15) for applying a plasma coating process of the intermediate layer (5) is provided within the second process chamber (12).

11. Device (7) according to one of claims 7 or 10, characterized in that a third material source (16) directed towards a substrate (3) to be received within the second process chamber (12) is formed within the first process chamber (8), wherein a third material stream (17) from a third material from a third material list comprising aluminum nitride carbide (AICN), aluminum silicon nitride (AISiN), aluminum silicon carbon nitride (AISiCN), aluminum oxynitride (AION), graphene, molybdenum disulfide (M0S2), 2D boron nitride (BN) or borophene (B) or a monatomic layer of boron atoms can be generated by means of the third material source (16).

12. Device according to one of claims 7 to 11, characterized in that a respective energy source is a laser, discharge lamp, flash tube, flash lamp, in particular an excimer, excimer laser, excimer flash lamp, or is formed as an excited dimer, ion cannon or magnetron, wherein in particular each material source comprises a respective energy source or energy beam source and / or plasma source, wherein the energy beam source in particular - comprises several strip elements through which all required material components can be guided individually or in small groups, - or is designed as a strip magnetron source, - or is designed as a tube magnetron source, - or is designed as a strip evaporator, - or comprises several evaporation stations that together form a strip, - or includes several ion cannons that together form a strip, - or is designed as a stripe ion cannon, - or has a strip mask equipped with one or more slots through which the required material components exit, - or has a strip mask comprising a sieve inlet through which the required material components exit, wherein the plasma source is configured as a microwave plasma source, or as an inductively coupled plasma source, or as a capacitively coupled plasma source, or as a remote plasma source, or as a sputtering source, specifically as a magnetron sputtering source or as an ion source or as an ion beam source.

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