Photodielectric material and production method

Abstract

The invention relates to the light-sensitive photodielectric material and its manufacturing method needed in sensor applications. The dielectric constant of present photodielectric material is changed according to the light intensity.

Description

[0001] PHOTODIELECTRIC MATERIAL AND PRODUCTION METHOD

[0002] TECHNICAL FIELD

[0003] The invention relates to the light-sensitive photodielectric material and its manufacturing method needed in sensor applications. The dielectric constant of present photodielectric material is changed according to the light intensity.

[0004] PRIOR ART

[0005] Virtual reality technology and market have been growing rapidly in recent years. Autonomous vehicle technology has also made a big leap in recent years. An autonomous car is equipped with a large number of sensors and these sensors collect a lot of data. The collected data needs to be processed instantly. These technologies require higher data bandwidth between logic and memory. The demand for higher data bandwidth drives ultra-high density packaging technologies such as 2.5D interposers. These ultra-high density packages require copper wires or traces below 5 pm and micro vias below 10 pm to realize high density RDLs (redistribution layers).

[0006] In recent years, there have been studies on the use of photolithography to create small micro-paths. On the other hand, the photosensitive materials do not require expensive high-power lasers. Therefore, micro-path formation via photolithography using photosensitive dielectric materials has attracted great interest in applications. Photosensitive polyimide (PI) and polybenzoxazole (PBO) are widely used to obtain ultra-thin paths. In the known technique, the dielectric constant of the material is changed by adding different metal oxides, metal ions, etc. However, obtaining photo-sensitive photodielectric materials, whose dielectric properties are controlled by photons without adding any additives to the material, will provide a great advantage in terms of usage, cost and functionality.

[0007] BRIEF DESCRIPTION OF THE INVENTION

[0008] The invention relates to the light-sensitive photodielectric material and its manufacturing method needed in sensor applications. The dielectric constant of this photodielectric material, which is used to improve the photosensitivity properties of electronic devices, is changed by light intensity without doping the material. The dielectric materials are the most basic components of capacitors, which are circuit elements that store energy and are used as filters in electronic technology. The functional capacitors are produced by making the functional dielectric material. The capacitance of the capacitor is improved with different dielectric materials placed between two parallel plates. In present disclosure, instead of using different dielectric materials, the dielectric constant of the dielectric materials is increased by exposing it to light. The material whose dielectric constant changes with photon is defined as the photodielectric material. The photodielectric material is used in electronic devices to be operated with light, and it transforms the electronic technology into a new generation photonic technology. The photocapacitors are prepared with photodielectric materials. When the light is irradiated on the photocapacitors, the opposite or equal charges accumulate between the plates of the capacitor. Photodielectric material determines how much energy the photocapacitor will absorb with photons. In present disclosure, the light-controlled capacitors are controlled. The dielectric constant of the dielectric material is based on the increase in the conductivity of the material by light. The increase in the conductivity of the material increases the dielectric permittivity of the material. In present invention, the photodielectric property of the present material is due to the internal photodielectric effect formed within the material. The photodielectric effect occurs by UV-VIS-NIR photons incident on the material. When photons are incident the material, the photons excite the electrons in the material to the higher energy states. The excited electrons move to more high energy levels in the material and in turn, create an electric current, causing a change in the dielectric constant of the material. The present photodielectric material consists of metal oxide semiconductors containing metal oxides semiconductor and define a side that faces the light.

[0009] DETAILED DESCRIPTION OF THE INVENTION

[0010] The photodielectric material in present invention is preparing by a solution with at least 3 components such as metal oxide, polymer, quantum dot, and subjecting it to a reaction temperature of at least 120 °C and at least reaction time of 6 hours in a high pressure reactor system.

[0011] The solvents used in preparing the solution are 2-methoxy ethanol, ethanol, n- methyl pyrilidone. The prepared dielectric material is prepared in the pellet form under at least 1 ton pressure. The prepared dielectric material is placed between at least one of the stainless steel, copper and aluminum plates to obtain a capacitor.

[0012] In present disclosure, the photodielectric effect is controlled by the UV-VIS-NIR photons. At least one of the UV (ultraviolet), VIS (Visible) and NIR near infrared wavelengths is used as the photon source. The photons in each wavelength region change the dielectric constant of the photodielectric material. The photodielectric material responds to the photons comprising of wavelengths between 300 nm-1100 nm. The photodielectric properties of present photodielectric material are controlled by UV, VIS and NIR wavelengths. The photodielectric properties of the photodielectric material are controlled by UV-VIS-NIR (white light covering wavelengths of 300-1100 nm and different wavelengths such as 254 nm, 366 nm, 450 nm, 520 nm, 590 nm, 635 nm, 750 nm, 850 nm, 1050). UV rays (wavelength of 300-400nm) changes the dielectric constant by photogenerated the carrier charges in the trapped levels in the photodielectric material, contributing to the numbers of photo-generated charge carriers in material. VIS light consists of wavelength of 400-700nm and this light changes the dielectric constant of the material with the photons in the visible region. NIR light consists of wavelength of 700-1100nm and this ray controls the dielectric constant of the material with photons in the near infrared region.

[0013] The present disclosure is composed of the form of at least one of the combinations of bottom electrode / dielectric material / top electrode and bottom electrode / composite dielectric material / top electrode. The bottom electrode is prepared with at least one of the metal groups such as aluminum, gold, platinum, silver and ITO, FTO glasses. The bottom electrode is prepared with the various size metal contacts.

[0014] FTO coated glass is known as fluorine doped tin oxide material. This glass is transparent and has one side conductive and the other side insulating. FTO is a glass with good thermal stability and resistance to preparation conditions. The resistance of the conductive surface of the ITO glass used in present disclosure is at least 5 Q / Square. The optical transmittance of ITO glass is at least 95% at 450 nm. The optical band gap of the ITO glass is at least 3.5 eV. In present disclosure, the dielectric constant of the photodielectric material is controlled by the heat treatment temperature of at least one of the FTO and ITO glass. The heat treatment temperature for ITO glass is at least 250 °C. The optical transmittance of the ITO glass is at least 90% at 250 °C. In present disclosure, the dielectric material is coated as a film on the metal sheet and then the upper electrode is prepared by the thermal evaporation method or the upper electrode is prepared using at least one of the FTO and ITO conductive glasses and the interdigit electrode The interdigit electrode consists of two interlocking comb-shaped metallic electrode arrays. These metallic electrodes are farmed on the surface of at least one of silicon, mica, polyethylene terephthalate (PET) polymer substrates to form a periodic structure. The silicon substrate is at least one of p-type and n-type silicon. PET substrate consists of polyethylene terephthalate (PET). PET is a rigid synthetic fiber and consists of resin and polyester polymers. PET is produced by polymerization of ethylene glycol and terephthalic acid. By coating ITO on PET, PET substrate with conductive surface is prepared. ITO-PET is used as at least one of the upper electrode and lower electrode. The optical transmission of ITO films on PET is at least 85% in the visible range (400-700 nm). The photodielectric measurement in present disclosure is made with at least one of ITO-PET, ITO, FTO, interdigit electrodes.

[0015] In present disclosure, the photodielectric material is consisted of at least one of metal oxide, polymer, quantum dots and carbon-based components in the same matrix. These are cadmium oxide (CdO), nickel oxide (NiO), magnesium oxide (MgO), polyaniline, graphene, black carbon, CdO1 -x:NiOx:Graphene composites, indigo:graphene composites, indigo carmine:graphene composites, indigo:graphene oxide, indigo carmine:graphene oxide composites, Cu2MSnS4: graphene (M=Cd, Zn, Ni, Mn) composites, Cu2MSnS4: graphene oxide (M=Cd, Zn, Ni, Mn), poly(3- hexylthiophene-2,5-diyl):graphene composites, poly(3-hexylthiophene-2,5- diyl):graphene oxide composites.

[0016] Photodielectric material consists of at least four different semiconductor groups. Semiconductor materials consist of metal oxide semiconductor, four-element semiconductor material, organic semiconductors and quantum dot semiconductor materials.

[0017] In present disclosure, the metal oxide semiconductors are cadmium oxide (CdO), nickel oxide (NiO), magnesium oxide (MgO), copper oxide (CuO). Organic semiconductors are polyaniline (PAN), poly(3-hexylthiophene-2,5-diyl) (P3HT), Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS), anthracene, indigo, indigo carmine. Four-element semiconductor materials are Cu2MSnS4 (M=Cd, Zn, Ni, Mn) semiconductor materials. Quantum dot materials are graphene quantum dot, carbon dots, cadmium tellurium dot, lead sulfide dot. The photoelectric material is a composite material consisting of at least metal oxide semiconductor, four-element semiconductor and organic semiconductor material. By changing at least one of the metal oxide semiconductor material or four-element semiconductor material or organic semiconductor material in the composite material, the optical band gap is changed and accordingly the photodielectric property (FDE) of the material is changed. Organic semiconductor materials used in photodielectric production are molecular materials having a vanishing density of states around the Fermi energy and an energy band gap of at least 1-5 eV between the highest occupied and lowest unoccupied states.

[0018] The photodielectric material in present disclosure consists of composites of metal oxide, polymer and carbon-based materials. The photodielectric material has at least two components. One of the components consists of at least one of metal oxide and inorganic materials, while the other component consists of at least one of polymer and at least one of quantum dot. The dielectric constant of the photodielectric material is controlled by at least one of metal oxide and inorganic materials, while the photodielectric component consists of at least one of semiconductor polymer, quantum dot and carbon-based materials.

[0019] In present disclosure, the optical band gap of the photodielectric material depends on the chemical composition of the photodielectric material. The optical band gap of the photodielectric material is controlled by the ratio of metal oxide, polymer and quantum dot.

[0020] The photodielectric gain of the invention is at least 3 and the dielectric photogain varies depending on the frequency. Thus, the photoelectric material is a frequency-dependent photodielectric material. The dielectric constant, dielectric loss value, conductivity, impedance, admittance, series resistance, parallel resistance, series capacitance, parallel capacitance and phase angle gains of the photodielectric material are controlled by photons in the range of 300 nm-1100 nm. The dielectric constant in present disclosure is controlled by at least a single photon.

[0021] The photodielectric gain of the component is expressed as AX / Xo. In the expression, AX is the difference between the value under light and the value in the dark. Xo component is the value in the dark.

[0022] In present disclosure, if the energy of the incident photons (E) is equal to or higher than half of the optical band gap (Eg) of the photodielectric material, E>Eg / 2, the material exhibits photodielectric properties. When E>Eg / 2, the carrier charges exhibit photodielectric properties by changing the density of states of the trap levels. When E>Eg / 2, the dielectric polarization of the material causes photodielectric formation. The dielectric relaxation mechanism occurs by photopolarization.

[0023] The photodielectric gain of the photodielectric material is defined by the following relation

[0024] AC FDE = — Co where, FDE is the photodielectric effect, AC is the photodielectric capacitance, Co is the capacitance in the dark. The FDE value of the photodielectric material is at least 3. The photodielectric constant of the photodielectric material is controlled by the DC electric field. Photodielectric constant measurements are made at least 10mV. The dielectric constant of the photodielectric material is controlled between 10mV and 5000 mV. The present invention is a two-mode photodielectric material that controls the dielectric constant with the light and electric field modes.

[0025] The dielectric constant is also controlled with at least one of the light and electric field modes. The dielectric relaxation mechanism occurs with polarization due to the electric field. In present disclosure, the electric field polarization occurs at least at 1 V.

Claims

CLAIMS1. Photodielectric material that is sensitive to light, characterized by controlling the dielectric properties with UV, VIS (Visible) and NIR near infrared wavelengths and containing at least one of the metal oxide, polymer, quantum dots and carbon based components in the same matrix.

2. The photodielectric material mentioned in claim 1 , characterized by containing at least two components, one of which is made up of at least one of the metal oxide and inorganic materials, and the other of which is made up of at least one polymer and at least one quantum dot.

3. The photodielectric material mentioned in claim 1 , characterized by having a photodielectric gain of at least 3.

4. The photodielectric material mentioned in claim 1 , characterized by being a photodielectric material works in two-modes, one mode is controled by photons and second mode is controlled by electric field.

5. The photodielectric material mentioned in claim 1 , characterized by being a material that controls the dielectric constant with at least one of the light and electric field modes.

6. The photodielectric material mentioned in claim 1 , characterized by having an electric field polarization of at least 1 V.

7. The photodielectric material mentioned in claim 1 , characterized by having a material that controls the dielectric constant, dielectric loss value, conductivity, impedance, admittance, series resistance, parallel resistance, series capacitance, parallel capacitance and phase angle gains with photons in the range of 300 nm-1100 nm.

8. The photodielectric material mentioned in claim 1 , characterized by having a material that controls the dielectric constant with at least a single photon.

9. The method of producing photodielectric materials that are sensitive to light, characterized by the following steps;- preparation of solution using at least 3 components such as metal oxide, polymer and quantum dot,- subjecting to reaction at a high pressure reactor system at a temperature of at least 120 ° C and for at least 6 hours.