Inspection device, inspection method, and system for connecting member to substrate

Abstract

An inspection device according to the present disclosure comprises: a first grating and a second grating that are provided in order in an irradiation direction of X-rays from an X-ray irradiation unit, and that each include a plurality of slits arranged in a direction orthogonal to an irradiation axis of the X-rays; a holding part that holds a substrate and a second member, which are bodies to be irradiated with the X-rays; a detection unit that is irradiated with the X-rays via the bodies to be irradiated, the first grating, and the second grating; a grating movement mechanism that uses at least one of the first grating and the second grating as a moving grating and moves the moving grating in the arrangement direction of the slits of the moving grating; and an information acquisition unit that obtains information relating to the positional relationship between a first mark on the substrate and a second mark on the second member from images of the first mark and the second mark obtained on the basis of output from the detection unit irradiated with the X-rays via the moving grating at mutually different positions.

Description

Inspection Device, Inspection Method, and Member Connection System for Substrate

[0005]

[0001] The present disclosure relates to an inspection device, an inspection method, and a member connection system for a substrate.

[0002] In manufacturing a semiconductor device, a process is performed in which a chip, which is an electronic component constituting the semiconductor device, is placed and bonded at a predetermined position on a substrate such as a semiconductor wafer (hereinafter referred to as a wafer). In Patent Document 1, a chip, which is a split piece of a first substrate laminated on a second substrate, is adsorbed and transported by a collet after reducing the adsorptivity to the second substrate by infrared irradiation. Then, while the chip is held by the collet, after sequentially removing a film provided on the lower surface of the chip and activating it by plasma treatment, the chip is placed on a third substrate, whereby the lower surface of the activated chip and the third substrate are bonded together.

[0003] Japanese Patent No. 7325515

[0004] The present disclosure provides a technique capable of highly accurately inspecting the positional relationship between a substrate as a first member and a second member to be bonded or planned to be bonded to the substrate.

[0005] The inspection apparatus of the present disclosure comprises: an X-ray irradiation unit; a first grid and a second grid, each provided in sequence in the direction of X-ray irradiation from the X-ray irradiation unit and each having a plurality of slits arranged in a direction perpendicular to the irradiation axis of the X-rays; a holding unit that holds a substrate, which is a first member on which a first mark is formed, and a second member, which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or planned to be connected to the substrate, as an object to be irradiated with the X-rays, between the X-ray irradiation unit and the first grid or between the first grid and the second grid in the irradiation direction; a detection unit on which the X-rays are irradiated via the object to be irradiated, the first grid and the second grid; a grid moving mechanism that moves at least one of the first grid and the second grid as a moving grid in the direction of the arrangement of the slits of the moving grid; and an information acquisition unit that obtains information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained based on the output from the detection unit on which the X-rays are irradiated via the moving grid at different positions.

[0006] This disclosure enables highly accurate inspection of the positional relationship between a first component, a substrate, and a second component that is bonded to or planned to be bonded to the substrate.

[0007] This is a side view of one embodiment of the inspection apparatus of the present disclosure. This is a perspective view of the chip and wafer that are to be inspected. This is a perspective view showing the grid included in the inspection apparatus. This is a plan view of the alignment marks provided on the wafer. This is a plan view of the alignment marks provided on the chip. This is an explanatory diagram of an image including the alignment marks. This is a schematic diagram of a system including the inspection apparatus and a bonding apparatus for bonding the wafer and the chip. This is a chart diagram showing the determination flow of the control unit during inspection. This is an explanatory diagram of the misalignment between the CAMs constituting each alignment mark. This is an explanatory diagram showing the moiré pattern formed by the FAMs constituting each alignment mark. This is an explanatory diagram showing the normal moiré pattern. This is an explanatory diagram showing the displacement of the moiré pattern due to the misalignment of the FAMs. This is an explanatory diagram showing the displacement of the moiré pattern due to the misalignment of the FAMs. This is an explanatory diagram showing the displacement of the moiré pattern due to the misalignment of the FAMs. This is an explanatory diagram showing a method for calculating the chip misalignment from the moiré pattern. This is an explanatory diagram showing a method for calculating the chip misalignment from the moiré pattern. This is an explanatory diagram showing a method for calculating the chip misalignment from the moiré pattern. This is a plan view of a wafer and chip equipped with alignment marks of a comparative example. This is a plan view of the alignment marks and moiré pattern of a comparative example. This is a plan view of the marks to illustrate the direction of movement of the grid and the arrangement of the marks. This is a plan view of the marks to illustrate the direction of movement of the grid and the arrangement of the marks. This is a side view showing another example of the inspection apparatus. This is a side view showing another example of the inspection apparatus. This is a plan view of the marks to illustrate the direction of movement of the grid and the arrangement of the marks. This is a side view showing another example of the inspection apparatus and the specimen. This is a plan view showing another example of the marks. This is a side view of the connection device between the chip and the wafer W, including the inspection apparatus. This is a flow diagram of the operation of the connection device. This is a side view showing the operation of the connection device.

[0008] [First Embodiment] An overview of the configuration of inspection apparatus 1, which is an embodiment of the inspection apparatus of the present disclosure and is shown in a side view in Figure 1, and an overview of the inspection performed by this inspection apparatus 1 will be described. The objects of inspection of inspection apparatus 1 are a wafer W, which is a circular substrate, and a chip 30. The chip 30, which is an electronic component equipped with an electronic circuit, is formed, for example, in the shape of a rectangular parallelepiped and is bonded to a bonding region 20 set on the surface of the wafer W.

[0009] As shown in the perspective view of Figure 2, alignment marks 2 and 3 are formed at predetermined positions in the bonding region 20 and at predetermined positions on the bottom of the chip 30 in contact with the bonding region 20, respectively, to identify their relative positions. When the wafer W and the chip 30 are bonded, the regions where the alignment marks 2 and 3 are formed overlap. The inspection device 1 uses X-rays to image the wafer W with the chip 30 bonded in this manner and obtains an image 40 that includes both the alignment marks 2 and 3. Then, based on the relative positions of the alignment marks 2 and 3 in the image 40, it is determined whether the position of the chip 30 in the bonding region 20 is correct or not.

[0010] [Overview of the Inspection Device and Alignment Marks] This inspection device 1 is a device to which a Talbot-Lowe interferometer is applied, and an image of the subject is acquired using a method called fringe scanning. Therefore, the inspection device 1 is configured to utilize the Talbot effect, in which coherent X-rays irradiated from an X-ray source (light source) through a grating G0 and passing through grating G1 form an X-ray intensity distribution with a periodic pattern related to the arrangement of slits in the grating G1 at a position (position A) a certain distance away from the grating G1. When the X-rays with the formed intensity distribution are irradiated onto the detection unit 13 that constitutes the inspection device 1, an image of interference fringes with the above periodic pattern, called a self-image, can be acquired. When the subject to be imaged is placed in the device so that X-rays that have passed through grating G0 are irradiated onto it, absorption and scattering by the subject occur, and the phase of the X-rays irradiated onto the detection unit 13 changes, causing the above self-image to deform.

[0011] Hereafter, gratings G0 and G1 will be referred to as source grating G0 and phase grating G1, respectively. Gating G2 (hereinafter referred to as absorption grating G2) is provided at the above position A, and X-rays that have passed through phase grating G1 further pass through absorption grating G2 and are irradiated onto the detection unit 13. By superimposing the arrangement pattern of the slits of this absorption grating G2 and the self-image (interference fringes) deformed by the placement of the test subject, a moiré image can be obtained. Since this moiré changes by moving phase grating G1, an image of the test subject can be obtained by analyzing this moiré. The test subject in this inspection apparatus 1 is the wafer W and chip 30 described above, and more specifically, the regions on the wafer W and chip 30 where alignment marks 2 and 3 are formed. In short, the inspection device 1 is configured to detect the phase distortion of X-rays caused by the arrangement of the subject (the object irradiated with X-rays) as a change in moiré caused by the relative movement of the phase grating G1 and the absorption grating G2, and to generate an image 40 including alignment marks 2 and 3.

[0012] As a device for detecting alignment marks 2 and 3 formed on such wafers W and chips 30, in addition to the X-ray inspection device 1, there is a known device that irradiates the object with infrared light to acquire an image. However, X-rays have higher penetration into objects than infrared light. Therefore, even if there is a covering that covers the alignment marks 2 and 3, and this covering suppresses the transmission of infrared light, the inspection device 1 is preferable because it can acquire an image 40 including the alignment marks 2 and 3. The above-mentioned covering refers to structures other than the alignment marks 3 that make up the chip 30, for example.

[0013] Furthermore, devices that acquire images using a Talbot interferometer that does not generally have a Talbot-Lowe interferometer and a source grating G0 have a relatively wide field of view and a relatively large depth of field. Due to this wide field of view, as will be described in detail later, the alignment marks 2 and 3 are configured to include marks of different shapes, and these marks of different shapes can be placed within the same field of view of the inspection device 1, allowing the position of the chip 30 on the wafer W to be inspected based on each mark. Therefore, with the inspection device 1, the position of the chip 30 can be determined with high accuracy and quickly, resulting in high inspection accuracy. The marks of different shapes are coarse alignment marks and fine alignment marks, which will be described in detail later.

[0014] Furthermore, although the alignment marks 2 and 3 are formed on the wafer W and chip 30 respectively, and are therefore located apart from each other in the direction of X-ray irradiation, as described above, the inspection device 1 has a large depth of field, allowing it to acquire clear images of each of the alignment marks 2 and 3. Therefore, the inspection accuracy of the inspection device 1 can be increased from this point of view as well.

[0015] As shown in the perspective view of Figure 2, only one alignment mark 2 and 3 are provided on the bonding region 20 of the chip 30 and on the chip 30 itself on the wafer W. As will be described in detail later with reference to comparative examples, each of the alignment marks 2 and 3 has a shape that allows for the determination of the correctness of the position on the wafer W by acquiring an image of each chip 30 only once. Although Figure 1 shows multiple chips 30 being bonded to the wafer W, for convenience, subsequent figures may show only one chip 30 being bonded to the wafer W, as in Figure 2. Bonding regions 20 are set on the wafer W for each chip 30 to be bonded to the wafer W, and the same number of alignment marks 2 and 3 are provided as there are chips 30.

[0016] [Configuration of Inspection Device 1] The configuration of the inspection device 1 will be described in more detail below, with reference to Figure 3, a perspective view showing each component of the inspection device 1. In the figure, mutually orthogonal directions are shown as the X, Y, and Z directions, respectively. The X and Y directions are horizontal, and the Z direction is vertical. The X-ray irradiation unit 11 including the X-ray source, the source grating G0, the phase grating G1, the stage 12, the absorption grating G2, and the detection unit 13 are arranged in this order from top to bottom in the Z direction (i.e., the direction of X-ray irradiation). The phase grating G1 is connected to the grating movement mechanism 14. The X-ray irradiation unit 11, the source grating G0, the grating movement mechanism 14, the absorption grating G2, and the detection unit 13 are connected to the main body 10 of the inspection device 1, thereby fixing their relative positions to each other.

[0017] The source grating G0, phase grating G1, and absorption grating G2 correspond to the third grating, first grating, and second grating, respectively. Furthermore, as described above, the various parts constituting the inspection apparatus 1 are arranged such that the source grating G0, which is the third grating, is positioned closer to the X-ray irradiation section 11 than the phase grating G1, which is the first grating, and the wafer W and chip 30, which are the objects irradiated with X-rays. The wafer W corresponds to the first member, and the chip 30 corresponds to the second member. The alignment mark 2 formed on the wafer W corresponds to the first mark, and the alignment mark 3 formed on the chip 30 corresponds to the second mark.

[0018] The X-ray irradiation unit 11 is equipped with an X-ray source and irradiates the X-rays vertically downward. Therefore, the irradiation axis L of the X-rays irradiated from the X-ray irradiation unit 11 coincides with the Z direction, and this Z direction is the direction of X-ray irradiation. To switch between irradiating downward X-rays and stopping the irradiation, the X-ray irradiation unit 11 is equipped with, for example, a shutter that blocks the X-rays irradiated from the source and a drive mechanism that moves the shutter.

[0019] The stage 12, which is the holding part for holding the wafer W, is composed of an annular stage body 12A having an inner diameter larger than the diameter of the wafer W, and a plurality of claw portions 12B that protrude from the stage body 12A toward the center of the stage body 12A. Multiple positions on the back surface of the wafer W that are spaced apart in the circumferential direction are supported by the claw portions 12B. The upper surface of the claw portions 12B is configured as a horizontal mounting surface. The wafer W, to which the chip 30 is bonded to the upper surface of the claw portions 12B of the stage 12, is placed and held on the stage 12 so that the alignment marks 2 and 3 are located within the X-ray irradiation area. In Figure 1, the outer edge of the X-ray irradiation area is shown by a dashed line. Therefore, the area between the two dashed lines in the figure is the X-ray irradiation area. Note that in order to obtain images 40 of the alignment marks 2 and 3, the wafer W is placed facing a predetermined direction, which will be described in detail later. In order to prevent obstruction of the supply of X-rays to the detection unit 13, the stage 12 is configured as described above, and the area below the wafer W other than the area supported by the claw portion 12B is open.

[0020] As described above, multiple bonding regions 20 are set on the wafer W, and a chip 30 is bonded to each of these bonding regions 20. Therefore, in order to move the wafer W relative to the X-ray irradiation unit 11 and inspect each chip 30, the stage 12 is connected to a stage moving mechanism 51, as illustrated in the second embodiment. The display of the moving mechanism is omitted in Figure 1. Even though the stage 12 is configured to be movable relative to the X-ray irradiation unit 11, the relative position of the stage 12 with respect to the X-ray irradiation unit 11 is fixed while X-rays are irradiated onto the wafer W and chip 30 to acquire an image 40.

[0021] Each of the source grating G0, phase grating G1, and absorption grating G2 is configured as a horizontal plate and is equipped with numerous slits 15 that extend in the Y direction and open in the Z direction, which is the direction of X-ray irradiation. In each of the source grating G0, phase grating G1, and absorption grating G2, the slits 15 are arranged at equal intervals along the X direction. Therefore, the slits 15 of the source grating G0, phase grating G1, and absorption grating G2 are arranged in a direction perpendicular to the X-ray irradiation axis L.

[0022] As described above, the source grating G0, phase grating G1, and absorption grating G2 have similar configurations, but their respective roles are different. To further explain the source grating G0, it is a grating used to obtain an effect called the Lau effect, in which X-rays irradiated from the X-ray irradiation unit 11 that have passed through the slit 15 of the source grating G0 are directed toward the phase grating G1.

[0023] The lattice movement mechanism 14 moves the phase lattice G1 in the X direction, that is, in the direction of the arrangement of the slits 15. The detection unit 13 is configured, for example, by arranging a number of conversion elements in a two-dimensional manner to generate electrical signals in response to the irradiated X-rays. With the above configuration of the inspection device 1, the X-rays irradiated from the X-ray irradiation unit 11 pass through the slits 15 of the source lattice G0 and irradiate the chip 30 and wafer W, which are the objects to be irradiated, and then pass through the slits 15 of the phase lattice G1 and the slits 15 of the absorption lattice G2 in order and irradiate the detection unit 13. The electrical signals output from each conversion element in the detection unit 13 are then transmitted to the control unit 100 provided in the inspection device 1.

[0024] [Configuration of the Control Unit] The control unit 100 is a computer and is equipped with a program, memory, and a CPU. The program incorporates instructions (each step) so that it can perform the inspections described later. This program is stored on a storage medium, such as a compact disk, hard disk, magneto-optical disk, DVD, etc., and installed in the control unit 100. The control unit 100 outputs control signals to each part of the inspection device 1 using this program and controls the operation of each part. Specifically, the program is configured to perform various processes such as X-ray irradiation and stopping of irradiation from the X-ray irradiation unit 11, movement of the phase grating G1 by the grating movement mechanism 14, generation of an image based on the electrical signal output from the detection unit 13, determination regarding the alignment marks 2 and 3 in the image described later, and various calculations to obtain the positional relationship of the alignment marks 2 and 3 associated with the determination.

[0025] Furthermore, the program of the control unit 100 is configured to control the operation of the bonding apparatus 8 (described later) that bonds the chip 30 to the wafer W, based on data representing the direction and amount of the displacement of the alignment mark 3 relative to the alignment mark 2, obtained during the inspection process of the position of the chip 30 in the bonding region 20 of the wafer W. With this configuration, the program can proceed with the flow shown in Figure 8, which will be described later. The data representing the direction and amount of the displacement are ΔX1′, ΔY1′, Δθ1, SA, and αr, which will be described later. Such data and the judgment results made based on such data are information regarding the positional relationship between the alignment mark 2 and the alignment mark 3.

[0026] [Operation Process of the Inspection Device] When performing inspection with this inspection device 1, the wafer W to which the chip 30 is bonded is placed on the stage 12 by a transport mechanism (not shown), and the alignment marks 2 and 3 are positioned in the X-ray irradiation area on the stage 12. Then, X-rays are irradiated onto the wafer W from the X-ray irradiation unit 11, and the phase grating G1 moves in the X direction from a predetermined inspection start position. During this X-ray irradiation, an electrical signal is output from the detection unit 13 to the control unit 100. When the phase grating G1 reaches a predetermined inspection end position, the movement and the irradiation of X-rays from the X-ray irradiation unit 11 are stopped. Based on the electrical signals output from the detection unit 13, which are irradiated with X-rays via the moving grating (phase grating G1) at different positions, the control unit 100 analyzes the change in moiré in the image formed by the self-image and the absorption grating G2, and generates an image 40 including the alignment marks 2 and 3. The movement of the phase grating G1 during the X-ray irradiation may be continuous or intermittent.

[0027] As will be described later, the control unit 100 obtains information about the relative positions of the alignment marks 2 and 3 that have been captured in this manner. Specifically, it acquires data representing the direction and amount of the misalignment between them. This data is then used for bonding the chip 30 to the bonding area 20. Therefore, the control unit 100 corresponds to an information acquisition unit that obtains information about the relative positions of the alignment marks 2 and 3 from the acquired image 40.

[0028] [Details of Alignment Marks] Next, alignment marks 2 and 3 will be explained in detail. Figures 4 and 5 are plan views of alignment marks 2 and 3, respectively. Note that the dashed lines in the figures and the points (O1, O2) indicating the center positions of the marks are added for explanatory purposes and are virtual frames and points, respectively. Similarly, the axes of the coordinate system shown in Figure 4 are also virtual axes displayed for explanatory purposes.

[0029] The material constituting the lines forming alignment marks 2 and 3 is different from the material surrounding the lines forming alignment marks 2 and 3 in order to enable image acquisition of the alignment marks 2 and 3 (to create contrast with the surroundings in image 40). Alignment marks 2 and 3 include a coarse alignment mark and a fine alignment mark. In the following description, alignment marks 2 and 3 may be referred to as AM2 and AM3, respectively. Furthermore, coarse alignment marks and fine alignment marks may be referred to as CAM and FAM, respectively.

[0030] [Wafer Alignment Marks] First, let's explain the AM2 formed on the wafer W shown in Figure 4. In plan view, the AM2 comprises a CAM23 formed in the first region 21 of the mark, and FAM24 formed in the second region 22 arranged on all four sides relative to the first region 21. As the first region 21 and second region 22 are set up in this way, the AM2 is a mark formed in a cross-shaped region of the wafer W. The first region 21 and the second region 22 are each square regions in plan view. For the sake of explanation, the four second regions 22 may be distinguished from each other as 22A, 22B, 22C, and 22D when viewed in the circumferential direction of a circle centered on a point in the first region 21. Furthermore, in order to capture images of both the CAM 23 and each FAM 24 simultaneously by X-ray irradiation during the unidirectional movement of the phase grating G1 from the inspection start position to the inspection end position as described in the operation process of the inspection device, the CAM 23 and each FAM 24 are formed to fit within the field of view of the inspection device 1. That is, the CAM 23 and each FAM 24 are formed to fit within the X-ray irradiation area on the stage 12. The CAM 23 is a first pre-determination mark, and the FAM 24 is a first post-determination mark. The second region 22 is a linear arrangement region, where 22A and 22C correspond to one linear arrangement region, and 22B and 22D correspond to other linear arrangement regions, respectively.

[0031] The outline of CAM23 within the first region 21 is square, and more specifically, CAM23 is constructed as a square-shaped ring. Therefore, as part of the outline of CAM23, there are straight lines extending in different directions, and these lines are inclined at 90° to each other. The center position of this square is shown as the center position O1 of CAM23. Note that this center position O1 is also the center position of AM2. For the sake of explanation, the two-dimensional orthogonal coordinate system on the wafer W with the center position O1 as the origin is called the X'Y' coordinate system. Each vertex of the above square coincides with either the mutually orthogonal X' axis or Y' axis of this X'Y' coordinate system. In the explanation of the mark, when the mark is a ring, as in CAM23, the outline is the ring itself, and when the figure is not a ring, as in CAM33 described later, the outline is the periphery of the figure.

[0032] The FAM 24 in the second region 22 forms a so-called line-and-space pattern, formed by numerous straight lines 25 extending in the same direction and being arranged in a direction different from the direction of extension, specifically in a direction perpendicular to the direction of extension. In this FAM 24, which is a mark of a group of straight lines, the space between adjacent straight lines 25 is shown as 26. Since each straight line 25 is arranged at equal intervals, each space 26 is also formed at equal intervals. Due to this configuration, the same structure of the FAM 24 is periodically repeated when viewed in the direction of the arrangement of the straight lines 25. The size of one period of this repetition is shown as the pitch P1. In the figure, a magnified part of the FAM 24 is shown at the end of the dotted arrow. For the sake of illustration, the straight lines 25 in the magnified part are not filled in but are shown with dots to distinguish them from the surrounding area. In the figures shown later, marks may also be distinguished from their surroundings by being shown with dots in this way. Note that CAM23 and CAM33 (described later) are shown as dotted marks for illustrative purposes, but they do not have patterns; for example, they may be single-colored marks, similar to FAM24, the source of the arrow in Figure 4.

[0033] To further explain the positional relationship between CAM23 and FAM24, each FAM24 is formed such that the extension of the straight line 25 extended toward the first region 21 is perpendicular to the sides of the square formed by the outer shape (ring) of CAM23. Therefore, if we call the straight lines that form the sides of this square and extend in directions that are 90° apart from each other straight line A and straight line B, then the extension direction of the straight line 25 in the second region 22A to 22D coincides with either the extension direction of straight line A or the extension direction of straight line B.

[0034] [Chip Alignment Marks] Next, we will explain the AM3 formed on the chip 30 shown in Figure 5. Since this AM3 has a similar shape to the AM2 on the wafer W, we will explain the differences from the AM2 in detail. In plan view, the AM3 comprises a CAM33 formed in the first region 31 of the mark, and FAM34 formed in the second region 32 arranged on all four sides relative to the first region 31. The first region 31 and the second region 32 are each square regions in plan view. As the first region 31 and the second region 32 are set up in this way, the AM3 is also a mark formed in a cross shape. The four second regions 32 may be distinguished from each other as 32A, 32B, 32C, and 32D when viewed in the circumferential direction of a circle centered on a point in the first region 31. The second regions 32A, 32B, 32C, and 32D of AM3 are paired with the second regions 22A, 22B, 22C, and 22D of AM2, respectively. When the chip 30 is bonded to the bonding region 20 of the wafer W, the first regions 21 and 31 overlap with each other, and the second regions 22 and 32, which form the same pair, also overlap with each other.

[0035] Furthermore, in order to enable simultaneous imaging of CAM 33 and each FAM 34 by X-ray irradiation during the unidirectional movement of the phase grating G1 from the inspection start position to the inspection end position as described in the operation process of the inspection device, CAM 33 and each FAM 34 are formed to fit within the field of view of the inspection device 1. CAM 33 is a second pre-determination mark, and FAM 34 is a second post-determination mark. The second region 32 is a linear arrangement region, where 32A and 32C correspond to one linear arrangement region, and 32B and 32D correspond to other linear arrangement regions, respectively.

[0036] The CAM33 within the first region 31 is a square mark. Therefore, the outer shape of CAM33 includes straight lines extending at 90° angles to each other. This CAM33 is formed to a size that fits within the CAM23 of AM2 when AM2 and AM3 are superimposed. That is, the length of one side of the square formed by the periphery of CAM33 is shorter than the length of one side of the square formed by the ring of CAM23. The center of this square of CAM33 is indicated as the center position O2 of CAM33. Note that this center position O2 is also the center position of AM3.

[0037] The FAM 34 in the second region 32, like the FAM 24 in the second region 22, is composed of a group of lines 35 that extend in the same direction, but are also arranged in a direction different from the direction of extension, specifically in a direction perpendicular to the direction of extension. The space between the lines 35 is shown as 36, and a magnified view of a part of the FAM 34 is shown at the tip of the dotted arrow in the figure. The FAM 34 also has a structure in which the same structure is periodically repeated when viewed in the direction of the arrangement of the lines 35, and the size of one period of this repetition is shown as the pitch P2. The pitch P2 is set to a different size from the pitch P1 of the FAM 24 in order to form the moiré pattern 41 described later by the overlapping of the FAMs.

[0038] To further explain the positional relationship between CAM33 and FAM34, each FAM34 is formed such that the extension of the straight line 35 extended toward the first region 31 is perpendicular to the sides of the square that forms the outer shape of CAM33. Therefore, if we call the straight lines C and D that form the sides of this square and extend in directions that are 90° apart from each other, then the extension direction of the straight line 35 in the second region 32A to 32D coincides with either the extension direction of straight line C or the extension direction of straight line D.

[0039] [Images of acquired alignment marks 2 and 3] Figure 6 shows an image 40 including AM2 and AM3 acquired by the control unit 100 after imaging by the inspection device 1 using the procedure described above. The first region 21 of alignment mark 2 and the first region 31 of alignment mark 3 are superimposed on the center of the image 40, while the second region 22 of alignment mark 2 and the second region 32 of alignment mark 3 are superimposed on the edges of the image 40.

[0040] Image 40 in Figure 6 shows an image obtained when the chip 30 is bonded to the bonding region 20 of the wafer W without any displacement. When the chip 30 is bonded to the bonding region 20 without any displacement in this way, the center position O1 and the center position O2 overlap in a plan view (not shown), and the vertices of the square formed by the outline of the CAM 33 coincide with either the X' axis or the Y' axis. In the region where the second region 22 is located in image 40, a moiré pattern 41 appears at the center of the direction of the arrangement of the lines 25 due to the overlap of FAM 24 and 34, which is a line pattern thicker than the lines 25 and 35. Note that the dashed line frame and coordinate system axes showing the second region 22 in Figure 6 are also virtual, similar to those shown in Figures 4 and 5.

[0041] In reality, the chip 30 may be misaligned when bonded to the bonding region 20 of the wafer W, and in that case, the image 40 will be different from the one shown in Figure 6. After the image 40 is acquired by imaging the wafer W and the chip 30, the control unit 100 controls the operation of the bonding apparatus 8 by executing the steps shown in the flowchart of Figure 8, which will be described later, based on the image 40.

[0042] [Configuration of the component connection system] The component connection system 80, including the inspection device 1 described above, will now be explained with reference to the schematic diagram in Figure 7. In addition to the inspection device 1, the component connection system 80 includes a bonding device 8 and a wafer W transport mechanism 81. In the component connection system 80, the bonding device 8 bonds the chip 30 to the bonding region 20 of the wafer W. The wafer W with the chip 30 bonded in this manner is then transported to the inspection device 1 by the transport mechanism 81 for inspection. Data on the direction and amount of misalignment of the alignment mark 3 of the chip 30 relative to the alignment mark 2 of the bonding region 20 of the wafer W (first substrate) is acquired. After acquiring this data on misalignment, bonding is performed in the bonding device 8 on the wafer W (second substrate) to which the chip 30 is to be bonded, so as to eliminate this misalignment. Therefore, in the component connection system 80, the operation of the bonding device 8 when bonding the chip 30 to the wafer W (second substrate) later is feedback-controlled based on the displacement information obtained by the inspection device 1 from the wafer W (first substrate) to which the chip 30 has been previously bonded by the bonding device 8.

[0043] [Configuration of the bonding apparatus] The bonding apparatus 8 includes a stage 82 on which the wafer W is placed, a moving mechanism 83 for moving the stage 82, a holding part 84 for holding the chip 30 so that it faces the wafer W on the stage 82, and a lifting mechanism 85 for raising and lowering the holding part 84 relative to the stage 82. The moving mechanism 83 is configured similarly to the moving mechanism 51 provided in the connection device 1D, which will be described later, and is capable of moving the stage 82 forward, backward, left and right, and rotating it around a vertical axis. Therefore, the moving mechanism 83 can move the wafer W relative to the chip 30 in a direction intersecting the direction in which the chip 30 and the wafer W face each other.

[0044] The holding part 84 can move up and down in the vertical direction, which is the direction in which the chip 30 and the wafer W face each other, by the lifting mechanism 85, and descends with respect to the wafer W on the stage 82 that has moved to a desired position, and connects the chip 30 to the bonding region 20. Therefore, the lifting mechanism 85 changes the distance in the direction in which the chip 30 and the wafer W face each other. The lifting mechanism 85 and the above-described moving mechanism 83 are configured as a relative movement mechanism for connecting the wafer W and the chip 30. The stage 82 that is held by placing the wafer W thereon corresponds to the first holding part, and the holding part 84 corresponds to the second holding part.

[0045] Regarding the surface of the wafer W and the lower surface of the chip 30, for example, by performing predetermined pre-treatment in the member connection system 80, when the holding part 84 descends with respect to the wafer W and the chip 30 is connected to the wafer W, they are joined to each other, that is, they are joined to each other. The control unit 100 determines the position of the stage 82 when the chip 30 is joined to the wafer W, and controls the operation of the stage 82 by the moving mechanism 83 so that the joining is performed at the determined position. Therefore, when joining the chip 30 and the wafer W, the position and rotation of the stage 82 in the front, rear, left, and right directions are controlled, so that the relative position of the chip 30 and the wafer W in the direction intersecting the direction in which they face each other is controlled.

[0046] As shown in the subsequent control flow, the determination of the position of the stage 82 at the time of this joining (that is, the determination of the relative position of the chip 30 and the wafer W in the direction intersecting the direction in which they face each other) is made based on the deviation data acquired by the inspection device 1 described above. More specifically, when newly joining the chip 30 and the wafer W, based on the deviation data, the position of the stage 82 is corrected with respect to the position at the time of the previous joining so that the deviation detected by the inspection device 1 is eliminated between the newly joined chip 30 and the wafer W, and the determination is made.

[0047] [Operation Control Flow by Control Unit] The flow of FIG. 8 will be described below. First, data representing the amount of deviation of CAM 33 of chip 30 with respect to CAM 23 in bonding region 20 of wafer W from image 40 (ΔX1′, ΔY1′, Δθ1 to be described later) is acquired (step S1), and it is determined whether the amount of deviation is below the threshold value (step S2). If it is determined in this step S2 that the amount of deviation is below the threshold value, then subsequently, based on moire pattern 41 obtained from FAM 24 of wafer W and FAM 34 of chip 30 from image 40, data representing the amount of deviation between wafer W and chip 30 (SA, αr to be described later) is calculated (step S3), and it is determined whether the amount of deviation is below the threshold value (step S4). If it is determined in step S4 that the amount of deviation is below the threshold value, then based on the amount of deviation acquired from FAM 24 and 34 in step S3, the positioning of stage 82 of bonding device 8 is performed (step S5).

[0048] If it is determined in step S2 that the amount of deviation of CAM 33 with respect to CAM 23 exceeds the threshold value, then based on the amount of deviation acquired from CAM 23 and CAM 33 in step S1, position correction of the stage of bonding device 8 is performed (step S6). Therefore, in this case, position correction based on FAM 24 and 34 after step S3 is not performed. Thus, in this flow, depending on the suitability of the positional relationship between CAM 23 and CAM 33, the acquisition of the positional relationship between wafer W and chip 30 based on FAM 24 and FAM 34 is performed. And for the case where it is determined in step S4 that the amount of deviation exceeds the threshold value, positioning is also performed based on the amount of deviation acquired from CAM 23 and CAM 33 in step S6. Note that the data representing the amount of deviation acquired in steps S1 and S3 is also data representing the direction of deviation.

[0049] [Explanation of Fine Alignment Marks (FAMs)] To explain the flow in Figure 8 in detail, FAMs 24 and 34 will be explained further. When FAMs 24 and 34 are imaged overlapping each other, they form a linear moiré pattern 41 in the image 40 as described above. As will be shown in a specific example later, if the position of FAM 34 is shifted relative to FAM 24, the position and extension direction of the moiré pattern 41 will change from that shown in Figure 6, depending on the direction and amount of the shift. Hereafter, in the explanation, the position of FAM 34 on the wafer W when there is no shift of the chip 30 relative to the bonding region 20 of the wafer W will be considered the positive position of FAM 34. In other words, the position of FAM 34 when the moiré pattern 41 is formed as shown in Figure 6 will be considered the positive position.

[0050] As described above, the moiré pattern 41 is thicker than the straight lines 25 and 35, and therefore appears clearly in the image 40. For this reason, it is relatively easy to detect the moiré pattern 41 from the image 40 by image analysis. In other words, even if the FAM 34 is shifted by a small amount from its positive position, that shift will appear clearly in the image as the moiré pattern 41, so the direction and amount of the shift of the FAM 24 from its positive position can be detected with high accuracy. In this way, the FAMs 24 and 34 are configured to acquire information regarding the positional shift of the chip 30 relative to the wafer W with high accuracy by forming the moiré pattern 41. As a result, the inspection accuracy of the inspection device 1 (i.e., the detection accuracy of the position of the chip 30 in the bonding region 20 of the wafer W) is improved, and the position correction of the stage 82 of the bonding device 8 can be performed with high accuracy.

[0051] However, if the misalignment of the chip 30 relative to the bonding region 20 is too large, problems may occur, such as being unable to form the moiré pattern 41, or forming a moiré pattern 41 similar to that formed when the misalignment is small. In other words, there is a concern that information regarding the misalignment cannot be accurately obtained based on the moiré pattern 41. Therefore, in the flow described in Figure 8, first, in step S2, a determination is made regarding the misalignment of CAM 23 and 33. If the amount of misalignment of CAM 33 relative to CAM 23 is determined to be below a threshold, it is assumed that the misalignment of the chip 30 relative to the wafer W is relatively small and that position correction using the moiré pattern 41 in steps S3 to S5 can be performed, and the steps from step S3 onward are executed.

[0052] [Regarding the acquisition of the positional relationship between course alignment marks (CAMs)] Next, referring to Figure 9 which shows CAMs 23 and 33 in image 40, we will provide a supplementary explanation regarding the determination of the positional misalignment of CAMs 23 and 33 performed in steps S1 and S2. Unlike the image shown in Figure 6, image 40 shown in Figure 9 is an image acquired when the chip 30 is misaligned from the bonding region 20 of the wafer W, and the display of FAMs 24 and 34 is omitted. In Figure 9, for explanatory purposes, dotted lines are shown that pass through the center position O2 of CAM 33, pass through the vertices of the square of CAM 33, and are mutually orthogonal, and these dotted lines are referred to as the X'' axis and Y'' axis. If the chip 30 does not misalign with respect to the bonding region 20 of the wafer W as shown in Figure 6, then the X'' axis and Y'' axis coincide with the X'' axis and Y'' axis, respectively.

[0053] In step S1 of the flowchart in Figure 8 described above, CAM23 and 33 in image 40 are identified from the contrast in the image 40, and then the center positions O1 and O2 of CAM23 and 33 are calculated. Then, a calculation using a predetermined formula is performed, and from image 40, the following are obtained in the X'Y' coordinate system: ΔX1', which is the amount of displacement in the X' direction between the center position O1 of CAM23 and the center position O2 of CAM33, and ΔY1', which is the amount of displacement in the Y' direction, as well as the amount of rotational displacement Δθ1 of CAM33 relative to CAM23. As shown in Figure 8, the amount of rotational displacement Δθ1 is the inclination of the X''Y'' coordinate system relative to the X'Y'' coordinate system, and therefore represents the inclination of CAM23 relative to its proper position. In the following explanation, the inclination of a mark relative to its proper position may also be expressed as a displacement in the rotation direction.

[0054] The acquisition of ΔX1′, ΔY1′, and Δθ1 as described above corresponds to the acquisition of information regarding the positional relationship between alignment marks 2 and 3. Furthermore, these ΔX1′, ΔY1′, and Δθ1, which represent the misalignment between alignment marks 2 and 3, also represent the misalignment of the chip 30 relative to the bonding region 20 of the wafer W. In step S2, each of the acquired ΔX1′, ΔY1′, and Δθ1 is compared with a preset threshold. If it is determined that all of ΔX1′, ΔY1′, and Δθ1 are below the threshold, it is determined that the amount of misalignment of CAM 33 relative to CAM 23 is below the threshold, and step S3 is executed following step S2. For example, if it is determined that any of ΔX1′, ΔY1′, or Δθ1 exceeds the threshold, step S3 is not executed, and as described above, step S6 is executed, and the position of the stage 82 of the bonding apparatus 8 is corrected based on ΔX1′, ΔY1′, and Δθ1. In other words, the position of the stage 82 of the joining device 8 is determined so that these ΔX1′, ΔY1′, and Δθ1 are resolved.

[0055] [Formation of Moire Pattern by Fine Alignment Marks (FAM)] Next, steps S3 and S4 of the flow in Figure 8 will be explained in more detail. As described above, when the FAM 34 is shifted from its positive position, the position of the moire pattern 41 that appears in the image 40 changes from the state shown in Figure 6. Figure 10 shows an example of the moire pattern 41 that appears when the FAM 34 is shifted from its positive position. Figures 11 to 13 are schematic explanatory diagrams showing the moire pattern 41 that appears in the second region 22 where the FAM 24 is formed in the image 40. Of these, Figure 11 shows the moire pattern 41 that appears when the FAM 34 is in the positive position, and is therefore a schematic representation of Figure 6.

[0056] Figures 12(a) to (d), 13(a) to (d), and 14(a) and (b) show the moiré pattern 41 that appears when the FAM 34 is shifted from its positive position, with Figure 12(b) being a schematic representation of the moiré pattern 41 in Figure 10. Note that 4A and 4B in Figures 11 to 13 are imaginary lines drawn to clearly show the positional change of the moiré pattern 41, and are tilted at 45° with respect to the X' axis and Y' axis shown in Figure 9, respectively, and pass through the center position O1. The arrows shown above each of Figures 12(a) to 12(d), 13(a) to 13(d), and 14(a) and (b) indicate the direction in which the FAM 34 is shifted from its positive position. More specifically, Figures 12(a) to 12(d) and 13(a) to 13(d) show the moiré patterns 41 that appear when the FAM 34 is shifted in eight linear directions, each 45° apart from the positive position. Figures 14(a) and 14(b) show the moiré patterns 41 that appear when the FAM 34 is shifted in a clockwise rotational direction and a counterclockwise rotational direction, respectively, from the positive position.

[0057] As shown in Figures 12(a) to 12(d) and Figures 13(a) to 13(d), when the FAM 24 is shifted linearly from its positive position, the moiré pattern 41 in each second region 22 of the wafer W shifts along the direction of the alignment of the lines 25 and 35 that form the moiré pattern 41 from the position shown in Figure 11. Then, the combinations of positions of the moiré pattern 41 appearing in the second regions 22A to 22D do not coincide between Figures 12(a) to 12(d) and Figures 13(a) to 13(d). In other words, assuming the FAM 34 is shifted linearly, if the direction of the shift is different, the position of the moiré pattern 41 in one of the end regions 22A to 22D will be different from each other.

[0058] Furthermore, as shown in Figures 14(a) and (b), when the FAM 34 is rotated away from its positive position, the number of moiré patterns 41 appearing in each second region 22 changes, and the direction of extension of the moiré patterns 41 changes to be different from the extension direction in Figure 11. As a result, the combination of directions of the moiré patterns 41 appearing in the second regions 22A to 22D does not match between Figures 14(a) and (b). In other words, if the rotational direction of the displacement of the FAM 34 is different, the appearance of the moiré patterns 41 in one of the end regions of 22A to 22D will be different.

[0059] As described above, the displacement of the FAM 34 from its positive position causes changes in the position, elongation direction, and number of moiré patterns 41 in the second region 22. These changes correspond to the amount of displacement of the FAM 34 from its positive position. Therefore, based on the moiré patterns 41 appearing in each second region 22, the direction and amount of displacement of the FAM 34 from its positive position (i.e., the direction and amount of displacement of the chip 30 relative to the bonding region 20 of the wafer W) can be determined. In Figures 12 to 14, for ease of understanding, cases are shown where the linear displacement and rotational displacement of the FAM 34 from its positive position are not combined, but in reality, there are cases where these displacements are combined. Even if the displacements are combined, the direction and amount of displacement from the positive position can be determined by analyzing the position and elongation direction of the moiré patterns 41 within each second region 22.

[0060] An example of a method for detecting the amount of displacement of the chip 30 relative to the wafer W (the amount of displacement of the FAM 34 from the positive position) based on the moiré pattern 41 in step S3 will be described. In this example, it is assumed that the moiré pattern 41 appears in the image 40 as shown in Figure 12(a). First, from the image 40, the position of the second region 22 in the image 40 is identified as being located between the extension line L1 of the edge of the CAM 23 shown in Figure 15, where the FAM 24 is formed. In other words, the position of the second region 22 of the wafer W is identified based on the position of the CAM 23 in the image 40. Furthermore, the position of the actual moiré pattern 41 in this second region 22 is identified. Also, by identifying the second region 22, the position of the moiré pattern 41 (hereinafter sometimes referred to as the reference moiré pattern 41) when the FAM 34 is in the positive position can also be identified in the image 40. In the following explanation, the direction perpendicular to the alignment direction of the FAM24 and CAM23 that form the moiré pattern 41 will be described as the shift direction.

[0061] In Figure 15, a straight line K0 is shown that passes through the width center of the reference moiré pattern 41 and is aligned with the extension direction of the reference moiré pattern 41. This straight line K0 is parallel to the two extension lines L1 and can also be said to be a straight line set to be equally spaced with respect to each of the two extension lines L1. As described above, by specifying the position of the reference moiré pattern 41 and the position of the actual moiré pattern 41, the distance SE between the width center position K1 of the actual moiré pattern 41 and the straight line K0 in the shift direction can be calculated. Figure 15 shows the distance SE obtained from the actual moiré pattern 41 in the second region 22A, but the distance SE is obtained in the same way in the second region 22B, which shows a different moiré pattern 41 movement pattern than that of the second region 22A. The SE obtained from the second region 22A is denoted as SE1, and the SE obtained from the second region 22B is denoted as SE2.

[0062] Next, we will explain with reference to Figure 16. To visually aid the explanation, Figure 16 shows virtual inscribed circles for the second region 22A and the second region 22B, which form a square, and the center of this inscribed circle and the center of the square are designated as K3. As the point is set in this way, K3 is also a point on the line K0 described above. The intersection point of the width center of the detected moiré pattern 41 and the inscribed circle is designated as K4. The direction from point K3 to point K4 is the direction in which the chip 30 is shifted relative to the bonding region 20 of the wafer W, and the distance SA between points K3 and K4 in this direction corresponds to the amount of linear displacement of the chip 30 relative to the bonding region 20.

[0063] If we set the angle between the line K0 in the second region 22A and the line connecting points K3 and K4 as θ, then the relationship SE1 = SA・sinθ holds. Also, if θ is set in this way, the angle between the line K0 and the line connecting points K3 and K4 in the second region 22B is (90-θ), and the relationship SE2 = SA・sin(90-θ) holds. This angle θ can be obtained by detecting the aforementioned points K3 and K4 from the positions of the second regions 22A and 22B and the position of the moiré pattern 41 identified from image 40. Therefore, by obtaining SE1, SE2 as explained in Figure 15, and the angle θ, the displacement amount SA can be calculated from each of the second regions 22A and 22B using the above relationship. SA can also be obtained from the second regions 22C and 22D in the same manner as from the second regions 22A and 22B. Figure 12(a) shows the case where the chip 30 is shifted in the linear direction, but the amount of shift SA is obtained in the same way when the chip 30 is shifted in other linear directions.

[0064] Next, an example of acquiring the amount of rotational displacement (angle αr) between the wafer W and the chip 30 using the actual moiré pattern 41 in the image, which is performed in step S3, will be explained with reference to Figure 17. In Figure 17, the straight line 25 constituting the FAM 24 in the second region 22B is shown with diagonal lines, while the straight line 35 constituting the FAM 34 is shown without being filled in. The angle αm between the extension line L1 of the side of the CAM 23 and the detected moiré pattern 41 is identified. Since the extension line L1 is parallel to the straight line 25, this angle αm is also the angle between the straight line 25 and the moiré pattern 41. The relationship between the pitch P1 of FAM 24, the pitch P2 of FAM 34 and the angles αm and αr is expressed by the following relational equation. Since the values ​​of pitch P1 and pitch P2 are known (stored in the memory of the control unit 100), the angle αr is calculated from the identified angle αm and the following relational equation. Figure 17 illustrates the second region 22B, but the angle αr can be calculated from each of the second regions 22A to 22D. Note that obtaining the linear displacement SA and rotational displacement αr in this way also constitutes obtaining information about the positional relationship between alignment marks 2 and 3.

[0065] Then, in step S4, for example, SA and αr obtained from each of the second regions 22A to 22D are compared with a preset threshold. If it is determined that SA and αr are both below the threshold, step S5 of the flow in Figure 8 is performed, and the position of the stage 82 of the joining device 8 is determined based on SA and αr. In other words, the position of the stage 82 of the joining device 8 is determined so that these SA and αr are eliminated. Since SA and αr are calculated from each of the second regions 22A to 22D, for example, the average value of SA and the average value of αr are used, respectively, to correct the position of the stage 82. If it is determined that either SA or αr exceeds the threshold, step S6 is performed, and the position of the stage 82 of the joining device 8 is corrected based on ΔX1′, ΔY1′, and Δθ1 obtained from CAM 23 and 33.

[0066] Incidentally, among the four second regions 32 in which FAM 34 is formed, the extension direction of the straight line 35 is the same between 32A and 32C, and between 32B and 32D. Furthermore, among the four second regions 22 in which FAM 24 is formed, the extension direction of the straight line 25 is the same between 22A and 22C, which are paired with second regions 32A and 32C respectively, and between 22B and 22D, which are paired with second regions 32B and 32D respectively. Therefore, as shown in Figures 11 to 14, when FAM 34 is shifted from its positive position, the moiré pattern 41 shows a similar change between second regions 22A and 22C, and the moiré pattern 41 shows a similar change between second regions 22B and 22D.

[0067] Since the moiré pattern 41 changes similarly in two of the four pairs of second regions 22 and 32, the calculation of the displacement of the FAM 34 relative to the positive position may be performed by providing only two pairs of second regions 22 and 32 in which the moiré pattern 41 does not change similarly. In other words, it is sufficient to provide at least one pair of second regions 22 and 32 that extends in one direction with respect to the straight lines 25 and 35, and at least one pair of second regions 22 and 32 that extends in a direction other than the one direction with respect to the straight lines 25 and 35. Specifically, if second regions 22A and 32A are provided, then another pair of second regions 22 may be provided, such as second regions 22B and 32B or second regions 22D and 32D, which show a change in the moiré pattern 41 different from that of second regions 22A and 32A.

[0068] Furthermore, let's assume that only one pair of second regions 22 and 32 is provided. In this case, even if the direction of displacement of the FAM 34 relative to its positive position is different, the position of the moiré pattern 41 in the second region 22 may appear to be the same, making it impossible to determine the direction of displacement. To give a specific example, as shown in Figure 12(b) and Figure 13(a), the direction of displacement of the FAM 34 is different, but the same moiré pattern 41 appears in the second region 22A.

[0069] Therefore, if only one set of the second regions 22 and 32 is provided, the direction of the displacement of the FAM 34 cannot be detected from the moiré pattern 41, and the linear displacement amount SA of the FAM 34 relative to the positive position described above cannot be calculated. For this reason, two or more sets of the second regions 22 and 32 should be provided as described above.

[0070] [Alignment Marks of Comparative Example] To explain the advantages of alignment marks 2 and 3 being composed of multiple sets of CAM 23, 33 and FAM 24, 34 as described above, the alignment marks of a comparative example will be described. Figure 18 is a plan view of a chip 30 bonded to a wafer W. Alignment marks 2A and 3A, which are the first comparative example, are provided on the wafer W and the chip 30, respectively, in place of alignment marks 2 and 3. In the example shown in Figure 18, alignment mark 2A is provided inside the rectangular bonding region 20, and near the center in the longitudinal direction of each side of the rectangle. In accordance with the arrangement of alignment mark 2A, four alignment marks 3A on the chip 30 are provided, relatively far apart from each other. In other words, four sets of alignment marks 2A and 3A are provided, and the arrow in the figure points to an image 40 obtained from one of these sets of alignment marks 2A and 3A.

[0071] Alignment marks 2A and 3A are each annular, and the outer diameter of alignment mark 3A is smaller than the inner diameter of alignment mark 2A, so alignment mark 3A fits within alignment mark 2A. In the acquired image 40, the center positions of alignment mark 2A and alignment mark 3A are shown as O3 and O4, respectively. In this Figure 18, for explanatory purposes, unlike the previous X'Y' coordinate system, a Cartesian coordinate system set on the wafer W with the center position O3 as the origin is shown as the X'Y' coordinate system. Alignment marks 2A and 3A, which form the same pair, are imaged by the inspection device 1 in the same way as alignment marks 2 and 3, and images are acquired. The control unit 100 of the inspection device 1 can detect the displacement of the center position O4 relative to the center position O3, that is, the displacement of alignment mark 3A relative to alignment mark 2A, by analyzing this image.

[0072] However, it is not possible to determine whether the misalignment of the alignment marks 2A and 3A is caused by the chip 30 shifting along the X' and / or Y' axes of the X'Y' coordinate system, by the rotation of the chip 30 relative to the X'Y' coordinate system, or by a combination of these misalignments. In other words, the misalignment information obtained from a single image of the alignment marks 2A and 3A does not allow us to determine the positional relationship between the bonding region 20 of the wafer W and the chip 30.

[0073] To obtain this positional relationship, it is necessary to shift the X-ray irradiation area on the wafer W using a stage movement mechanism to acquire images of multiple sets of alignment marks 2A and 3A, and to detect the direction and amount of displacement between the center positions O3 and O4 for each set. Therefore, in this comparative example 1, four sets of alignment marks 2A and 3A are provided on the wafer W and the chip 30, and an image 40 is acquired for each set, thereby obtaining the positional relationship between the bonding region 20 and the chip 30, and determining whether the position of the chip 30 in the bonding region 20 is correct or not. However, requiring the acquisition of images 40 from multiple locations on the wafer W in order to inspect a single chip 30 may hinder the improvement of the throughput of the inspection device 1.

[0074] Next, the alignment marks 2B and 3B of Comparative Example 2 will be explained with reference to Figure 19, focusing on the differences from alignment marks 2 and 3. These alignment marks 2B and 3B each have first regions 21 and 31 where CAM 23 and 24 are formed, respectively, similar to alignment marks 2 and 3. Furthermore, alignment marks 2B and 3B each have one second region 22 and 32 where FAM 24B and 34B are formed, respectively.

[0075] The upper part of Figure 19 shows FAM24B and FAM34B. As shown in the figure, FAM24B and FAM34B are patterns formed in a grid pattern. For FAM24B, many straight lines 25 are arranged vertically and horizontally in a plan view, and the vertical and horizontal pitches are P3, respectively. For FAM34B, many straight lines 35 are arranged vertically and horizontally in a plan view, and the vertical and horizontal pitches are P4, which are different from P3, respectively. The lower part of Figure 16 shows the moiré pattern 41B that appears in the image 40 when the second regions 22 and 32 overlap. The lower left side of the figure shows the moiré pattern 41B that appears when FAM34B is in the correct position. The lower center and right sides of the figure show the moiré pattern 41B that appears when FAM34B is shifted from its positive position, while the center and right sides show the moiré pattern 41B that appears when it is shifted linearly and rotationally relative to the positive position, respectively.

[0076] As shown in the figure, the moiré pattern 41B is cross-shaped. If the FAM 34B is shifted linearly relative to the positive position, the center of the cross of the moiré pattern 41B moves within the second region 22 according to the direction of the shift. If the FAM 34B is shifted rotationally relative to the positive position, the direction in which the cross of the moiré pattern 41B extends within the second region 22 changes according to the direction of the shift. Since there are no cases where the changes in the moiré pattern 41 are common despite different shift directions, as in the case of alignment marks 2 and 3, alignment marks 2B and 3B can calculate the amount of shift (SA, αr) of the FAM 34B relative to the positive position even if there is only one set of second regions 22 and 32. In other words, it may be possible to perform inspection.

[0077] However, it is difficult to accurately detect the center position in the region where the vertical and horizontal moiré patterns forming a cross overlap. Therefore, it is difficult to detect the position corresponding to K1, which is the width center of the detected moiré pattern 41 as explained in Figure 15. Consequently, there is a concern that the inspection accuracy of the inspection device 1 may not be sufficiently high because it is difficult to accurately grasp the displacement of the moiré pattern.

[0078] [Advantages of Alignment Marks 2 and 3] The alignment marks 2 and 3 shown in Figures 4 and 5 can prevent the occurrence of the defects described in Comparative Examples 1 and 2. Therefore, the moiré pattern 41 in the image 40 can be identified with high reliability, thereby increasing the inspection accuracy of the inspection device 1. Furthermore, since the alignment marks 2 and 3 are formed by a sequence of straight lines and a square pattern, they are non-circular marks, and therefore the rotational misalignment of the chip 30 relative to the bonding region 20 can be identified. Therefore, as described above, it is possible to detect and inspect the linear and rotational misalignments of each other in a single image, thereby increasing the throughput of the inspection device 1.

[0079] [Relationship between alignment marks and the direction of movement of the phase grating G1] Considering the above advantages, the alignment marks 2 and 3 are set to the shapes described above. When performing inspection using these alignment marks 2 and 3, the wafer W is placed on the stage 12 in a predetermined orientation. The reason for this will be explained with reference to Figure 20. Figure 20 shows a plan view of the CAM 33 of the phase grating G1 and alignment mark 3 during imaging of the comparative example, and the illustration of the FAM 34 of the alignment marks 2 and 3 is omitted. In Figure 20, it is shown that imaging is performed with two sides of the square formed by the CAM 33 aligned in the X direction in which the phase grating G1 moves.

[0080] In Figure 20, the white arrow points to the CAM33 of alignment mark 2 in the acquired image 40. As shown in the figure, only the edges of CAM33 extending in the Y direction appear in image 40, while other parts do not appear in the image. That is, parts of CAM33 other than the edges extending in the Y direction do not form contrast in image 40. As described above, when the phase grating G1 is moved in the direction of the arrangement of the slits 15 of the phase grating G1, images of the subject alignment marks 2 and 3 are generated based on the change in moiré that appears in the image due to the overlap between the absorption grating G2 and the self-image. More specifically, the inspection device 1, which uses a Talbot Lau interferometer, can output three types of images: absorption, phase, and scattering images. Regarding the phase image, the straight lines of the subject extending in the direction of the arrangement of the slits 15 do not cause the change in moiré due to this movement and therefore do not appear in image 40. As described above, depending on the orientation of the wafer W on the stage 12, parts of the alignment marks 2 and 3 in the image 40 may be missing, making inspection impossible.

[0081] To prevent this, when X-ray irradiation is performed on the wafer W, the lines forming the ring of CAM23 of alignment mark 2, the line 25 of FAM24, and the lines forming the sides of the square of CAM33 of alignment mark 3, and the line 35 of FAM are tilted with respect to the X direction, which is the arrangement direction of the slits 15, with respect to the X direction in which the phase grating G1 moves. Specifically, when X-ray irradiation is performed, it is preferable that the angle Δθ3 with respect to the X direction when viewed in the direction of X-ray irradiation for the lines forming the ring of CAM23, the line 25 of FAM24, and the lines forming the sides of the square of CAM33 of alignment mark 3, and the line 35 of FAM is set to, for example, 45°. Figure 21 shows a plan view of CAM23 and 33 with Δθ3 = 45°. Although the FAM24 and 34 are not shown in Figure 21, since the Δθ3 = 45° is set for the lines CAM23 and 33, the Δθ3 = 45° is also set for the lines 25 and 35 of FAM24 and 34.

[0082] Let me add some explanation regarding setting Δθ3 = 45°. As previously mentioned, the position of the chip 30 on the wafer W may shift in the rotational direction. Also, when placing the wafer W on the stage 12, it is possible that the wafer W may rotate relative to the stage 12 due to factors such as the operational accuracy of the transport mechanism 81 that transports the wafer W. Setting Δθ3 = 45° during X-ray irradiation means that the chip 30 is bonded to the bonding region 20 of the wafer W without shifting, and that when placing the wafer W on the stage 12, it is assumed that there is no shift of the wafer W due to the transport error mentioned above, so that the wafer W is placed on the stage 12 so that Δθ3 = 45° and the wafer W is irradiated with X-rays. In other words, setting Δθ3 = 45° means setting it so that Δθ3 = 45°.

[0083] Regarding the method of placing the wafer W onto the stage 12, a specific example is to detect a notch N, which is a cutout formed on the periphery of the wafer W, before transporting the wafer W to the inspection apparatus 1, and rotate the wafer W according to the detection result, so that the wafer W is oriented in a predetermined direction. This detection of the notch N and rotation of the wafer W can be performed using an apparatus configured to include a sensor 63, a stage 12, and a stage movement mechanism 51, as described in the second embodiment. The wafer W, thus oriented in the predetermined direction, is then placed on the stage 12 by the transport mechanism 81 so that Δθ3 = 45°. Alternatively, the inspection apparatus 1 may be equipped with a stage movement mechanism 51 and a sensor 63 so that the notch N is detected and the wafer W is oriented in a predetermined direction, thereby ensuring that Δθ3 = 45°.

[0084] Furthermore, when acquiring image 40 as a phase image, the lines forming the ring of CAM23 of alignment mark 2, the line 25 of FAM24, and the lines forming the sides of the square of CAM33 of alignment mark 3, as well as the line 35 of FAM, only need to be inclined with respect to the X direction. Therefore, the angle Δθ3 between the X direction and each line forming these marks should be between 0° and 90°, as long as it is not 0° or 90°. In other words, it is not limited to Δθ3 = 45°. However, by setting Δθ3 = 45°, the contrast of the four sides of the square can be made uniform, allowing for a more accurate calculation of the center position of this square. Therefore, for CAM23 and 33, O1 and O2 can be calculated more accurately, which is preferable.

[0085] Incidentally, as mentioned above, with respect to alignment mark 2, the extension direction of each straight line forming the outer shape (ring) of CAM 23 coincides with the extension direction of the straight line 25 forming FAM 24. Since there are only two extension directions for the straight lines that constitute the mark, it is less likely that the straight lines will align in the X direction even if there is a shift in the rotation direction of the chip 30 or a transport error of the wafer W, compared to the case where the mark is formed by straight lines extending in multiple directions. In other words, alignment mark 2 is designed in such a way that the disappearance of the straight line portion that forms the alignment mark 2 in the image 40 when it is a phase image is less likely to occur, which is preferable in that inspection can be performed reliably. Similarly, with respect to alignment mark 3, since the extension direction of each straight line forming the outer shape of the square CAM 33 coincides with the extension direction of the straight line 35 forming FAM 34, there are only two extension directions for the straight lines that constitute the mark, which is preferable because it is less likely that the disappearance of the straight line portion will occur in the image 40.

[0086] Furthermore, the joint where the straight sections of CAM23 of alignment mark 2 are joined forms a curve, as shown in Figure 4. That is, CAM33 has a shape with rounded tops. In other words, although alignment mark 2 is formed by straight lines as described above, it may also include curves. Similarly, alignment mark 3 may have a rounded top at the corner of the rectangle of CAM33, and its outer shape may include curves. In other words, the outer shape of alignment mark 3 is not limited to being composed solely of straight lines, but may also include curves.

[0087] [Modified Inspection Apparatus of the First Embodiment] Hereinafter, each inspection apparatus, which is a modified version of inspection apparatus 1, will be described, focusing on the differences from inspection apparatus 1. Figure 22 shows a side view of inspection apparatus 1A. In inspection apparatus 1A, a stage 12 is provided above the phase grating G1 and below the source grating G0, and X-rays that have passed through the phase grating G1 are irradiated onto alignment marks 2 and 3. Thus, the apparatus configuration may also involve placing the wafer W and chip 30, which are the samples to be examined, between the phase grating G1 and the absorption grating G2.

[0088] Figure 23 shows a side view of the inspection device 1B. As described above, when performing the inspection, it is desirable to create a moiré pattern in the image by overlapping the self-image formed by the phase grating G1 with the image of the absorption grating G2, and furthermore, to be able to change that moiré pattern. In order to create and change the moiré pattern in this inspection device 1B, the absorption grating G2 is configured as a moving grating that moves by a grating moving mechanism 14 instead of the phase grating G1, and moves in the X direction, which is the direction of the arrangement of the slits 15 of the absorption grating G2, when acquiring the images 40 of the alignment marks 2 and 3. Note that if the moiré pattern can be created and changed in this way, both the phase grating G1 and the absorption grating G2 may be moved.

[0089] As described above, in changing the moiré pattern caused by the overlap of the self-image and the pattern of the absorption grating G2, the direction of movement of the phase grating G1 is not limited to coinciding with the X direction, which is the direction of arrangement of the slits 15 of the phase grating G1. The direction of movement of the phase grating G1 does not need to coincide with the direction (Y direction) along the extension direction of the slits 15 of the phase grating G1 when viewed in the direction of X-ray irradiation. Therefore, as shown in the plan view of Figure 24, the phase grating G1 may move in both the X and Y directions. In other words, for the phase grating G1 to move in the direction of arrangement of the slits 15 of the phase grating G1 means that the direction of arrangement of the slits 15 is included as a component of its direction of movement. Similarly, when moving the absorption grating G2, the direction of movement of the absorption grating G2 does not need to coincide with the direction along the extension direction of the slits 15 when viewed in the direction of X-ray irradiation.

[0090] In the inspection devices described so far, X-rays are irradiated vertically downwards, but the direction of X-ray irradiation is arbitrary. Depending on the change in the direction of X-ray irradiation from the examples described above, the orientation of the grids G0, G1, G2, stage 12, and detection unit 13 can also be appropriately changed from the examples described above. Furthermore, the test subjects of each inspection device are not limited to wafers W to which chips 30 are bonded. For example, as shown in Figure 25, wafers W with alignment marks 2 and 3 formed on them may be bonded together, and these bonded wafers W may be used as test subjects. In other words, whether the bonding position of one wafer W to the other wafer W is correct can be determined by detecting the misalignment of the alignment marks 2 and 3 according to the flow in Figure 8.

[0091] [Further explanation of alignment marks and their variations] Alignment marks 2, which have been described as being formed on the wafer W, may be formed on the chip 30, and alignment marks 3, which have been described as being formed on the chip 30, may be formed on the wafer W. Also, alignment marks 2 and 3 may include only CAM 23 and 33 from CAM 23 and 33 and FAM 24 and 34. In other words, the position of the chip 30 relative to the wafer W may be determined by ΔX1′, ΔY1′, and Δθ1 calculated from CAM 23 and CAM 33. However, since a more accurate inspection can be performed by using the moiré pattern 41 formed by FAM 24 and 34, it is preferable that alignment marks 2 and 3 each include FAM 24 and 34.

[0092] Furthermore, alignment marks 2 and 3 may include only FAM24 and 34 among CAM23 and 33 and FAM24 and 34. However, as described above, if the displacement of the chip 30 relative to the bonding region 20 of the wafer W is relatively large, there is a risk that normal inspection based on the moiré pattern 41 may not be possible, so it is preferable that alignment marks 2 and 3 include CAM23 and 33 respectively.

[0093] In order to ensure that alignment marks 2 includes CAM23 and FAM24, and alignment marks 3 includes CAM33 and FAM34, CAM23, CAM33 and FAM24, FAM34 are positioned relatively far apart. After acquiring images of CAM23, CAM33 and making the determination regarding CAM23, CAM33 in step S1, the X-ray irradiation area on the wafer W may be moved to acquire images of FAM24, CAM34 and make the determination regarding CAM23, CAM33 in step S1. In other words, CAM23, CAM33 and FAM24, CAM34 may be formed so that they are not included in the same field of view of the inspection device 1. However, as described in the explanation of Comparative Example 1, if images are repeatedly acquired in this manner, there is a concern that the throughput of the inspection device 1 will decrease, so it is preferable to form CAM23, CAM33 and FAM24, CAM34 so that they are included in the same field of view of the inspection device 1.

[0094] Incidentally, we have described that CAM23,33 are formed in the first regions 21,31 which are located near the center of the image 40, and FAM24,34 are formed in the second regions 22,32 which are located near the edges of the image 40. However, the positional relationship between the regions where CAM23,33 are formed and the regions where FAM24,34 are formed is arbitrary. In order to increase the throughput of the inspection device 1, as in the examples described above, it is sufficient to ensure that the first regions 21,31 where CAM23,33 are located and the second regions 22,32 where FAM24,34 are located are within the same field of view of the inspection device 1, so that CAM23,33 and FAM24,34 can be displayed in a single image 40.

[0095] Furthermore, for FAM24, the width of the line 25 and the width of the space 26 may be the same or different. Similarly, for FAM34, the width of the line 35 and the width of the space 36 may be the same or different. In the example described above, with FAM34 in the correct position, the moiré pattern 41 appears as if dividing the second region 22 into two equal parts, as shown in Figure 6. However, depending on the relationship between the sizes of the lines 25, 35 and the spaces 26, 36, and the settings of the pitches P1 and P2, it may appear in a different position than shown in Figure 6. FAM24 and FAM34 may be set so that the moiré pattern 41 appears in a different position than shown in Figure 6.

[0096] Incidentally, the external shapes of CAM23 and CAM33 are not limited to being squares; for example, they may be formed as rectangles other than squares. The reason for this is that being rectangular means the figure has vertices, and if the figure has vertices in this way, the orientation of CAM23 and CAM33 can be determined from image 40, and furthermore, the difference in their orientations (i.e., the rotational difference of CAM33 relative to CAM23) can be determined. If the rotational difference can be determined in this way, it prevents the situation described in Comparative Example 1 where only the difference between the center position of the figure of CAM23 and the center position of the figure of CAM33 can be determined, and it becomes possible to calculate ΔX1′, ΔY1′, and Δθ1 as described in Figure 9. In other words, the direction and amount of the difference can be determined in a single image. For these reasons, the external shapes of CAM23 and CAM33 are not limited to being rectangles; they may be triangles or polygons with five or more vertices.

[0097] Furthermore, it is sufficient that CAM23 and CAM33 are formed in such a way that their orientations can be identified from image 40, respectively. Therefore, the external shapes of CAM23 and CAM33 are not limited to being formed as figures with three or more vertices as described above. Specifically, they may be formed to have an elliptical external shape as shown in Figure 26. Thus, although examples in which the external shapes of CAM23 and 33 include straight lines have been described so far, they may also be configured without straight lines. In this way, CAM23 and 33 do not need to be perfect circles like in Comparative Example 1.

[0098] However, if the outer shapes of CAM23 and CAM33 are made elliptical or rectangular as shown in Figure 26, there is a risk of them becoming larger due to elongation in certain directions. Also, if they are made into shapes with a relatively large number of vertices, such as pentagons, there is a risk of them becoming larger due to the protrusion of the vertices in each direction. As a result, the area occupied by CAM23 and CAM33 in a single image 40 becomes large, and there is a risk that the number of FAM24 and 34 pairs that can be contained in the image 40 will be limited. From the viewpoint of limiting the area occupied by CAM23 and CAM33 and providing a relatively large number of FAM24 and 34 pairs as in the examples described above, it is preferable to make the outer shapes of CAM23 and CAM33 square.

[0099] Figures 15 to 17 show one method for detecting the amount of displacement using the moiré pattern 41, but this method for detecting the amount of displacement may be changed as appropriate. The control unit 100 may store data on the position of a reference moiré pattern 41 in the second region 22, and the amount of displacement may be calculated according to a predetermined algorithm by comparing this reference moiré pattern 41 with the moiré pattern 41 actually detected in the second region 22.

[0100] [Other Operating Modes of the Inspection Device] The amount of misalignment acquired by the inspection device 1 is not limited to being used for feedback control of the operation of the joining device 8, but may also be used to determine whether or not there is an abnormality. In other words, in the flow chart of Figure 8, if it is determined in steps S2 and S4 that the acquired amount of misalignment exceeds a threshold, the inspection device 1 may be configured to notify the user that the joining is abnormal through images, sounds, etc. However, since the expected amount of misalignment is small, in the above example, abnormality determination based on such an amount of misalignment is not performed, and the operation of the joining device 8 is controlled accordingly. It should also be noted that the inspection device 1 may be configured so that the user is notified by displaying the amount of misalignment and the direction of the misalignment on a display unit that constitutes the inspection device, without comparing the acquired amount of misalignment with a threshold.

[0101] [Second Embodiment] As a second embodiment, the connection device 1D incorporating the inspection device 1 will be described with reference to the side view in Figure 27, focusing on the differences from the inspection device 1. The connection device 1D acquires an image 40 by capturing the alignment marks 2 and 3 of the chip 30 and wafer W before they are joined together, and detects the misalignment between the chip 30 and the wafer W. The chip 30 is placed on the joining region 20 of the wafer W in such a way that this amount of misalignment is reduced. Therefore, the connection device 1D acquires an image 40 by capturing the wafer W and the chip 30 which is to be connected to the wafer W and is located away from the wafer W in the direction of X-ray irradiation.

[0102] The stage 12 on which the wafer W is placed is connected to a stage movement mechanism 51. This movement mechanism 51 includes a horizontal movement section 52 and a rotational movement section 53. The horizontal movement section 52 is a so-called XY stage and includes a base 54 that can move in the X and Y directions. The rotational movement section 53 is provided on this base 54, and the stage 12 rotates around the Z axis by the rotational movement section 53. The axis of rotation by this rotational movement section 53 passes through the center of the area on the stage 12 where the wafer W is placed. Therefore, the stage 12 can move in the X and Y directions together with the wafer W on which it is placed, and can also rotate around a central axis that passes through the center of the wafer W. In the figure, the stage 12 is shown as being configured to block and support most of the lower part of the wafer W, but in order not to obstruct the transmission of X-rays, it can be configured to support only a part of the peripheral edge of the wafer W, for example, as in the first embodiment. The control unit 100 controls the operation of the movement mechanism 51 based on the detected misalignment of the alignment marks 2 and 3, and connects the chip 30 to the wafer W.

[0103] Sensors 63, consisting of a light-emitting unit 61 and a light-receiving unit 62, are provided on the upper and lower sides of the peripheral edge of the wafer W placed on the stage 12. During the rotation of the stage 12, which is positioned at a predetermined location in the XY plane, light is emitted from the light-emitting unit 61 to the light-receiving unit 62, and the control unit 100 can determine the position of the notch N formed in the wafer W by receiving a detection signal from the light-receiving unit 62.

[0104] Furthermore, the connection device 1D is equipped with a chip transport mechanism 7, which includes a holding part 71 that attracts and holds the upper surface of the chip 30, and a moving mechanism 72 that moves the holding part 71 horizontally and vertically up and down. In the illustrated example, the horizontal movement of the holding part 71 is performed as a pivoting movement, and the chip 30 attracted by the holding part 71 is transported from a predetermined preparation position 73 to the bonding area 20 of the wafer W on the stage 12.

[0105] The stage 12 and the holding section 71 constitute a first holding section and a second holding section, respectively. As described above, since the moving mechanism 51 for the stage is configured, the bonding region 20, which is the position on the wafer W placed on the stage 12 where the chip 30 is to be connected, and the chip 30 held in the holding section 71 can be moved relative to each other in a direction perpendicular to the X-ray irradiation axis L. In addition, the moving mechanism 72 of the chip transport mechanism 7 makes it possible to change the relative distance between the chip 30 held in the holding section 71 and the wafer W on the stage 12 along the vertical direction, which is the direction of X-ray irradiation. These moving mechanisms 51 and 72 constitute a relative moving mechanism that changes the relative positions of the stage 12 and the holding section 71.

[0106] In addition, the holding section 71 may also be provided with through holes as appropriate, similar to the stage 12, to ensure that the X-rays supplied from the X-ray irradiation section 11 are not obstructed from irradiating the detection section 13. In the connecting device 1D, for example, similar to the inspection device 1, the X-ray irradiation section 11, the source grating G0, the grating movement mechanism 14, the absorption grating G2, and the detection section 13 are connected to the main body of the device 10, and their relative positions are fixed, but the main body of the device 10 is not shown in Figure 27.

[0107] The operation of the connection device 1D will be explained with reference to the flowchart in Figure 28. The wafer W is placed on the stage 12, which is positioned in a predetermined location on the XY plane by the transport mechanism. The wafer W is rotated by the stage movement mechanism 51, and the control unit 100, which receives the output signal from the sensor 63, detects the notch N. The stage 12 rotates so that the notch N faces a predetermined direction, and the stage 12 moves horizontally so that the bonding region 20 of the wafer W is positioned in a predetermined location on the XY plane. While the position of the wafer W is adjusted in this way, the chip 30, which is positioned in the preparation position 73, is held by the holding part 71 of the chip transport mechanism 7. Then the holding part 71 is moved by the movement mechanism 72, and the chip 30 is placed on the bonding region 20. As the wafer W and chip 30 move in this way, the alignment marks 2 and 3 are placed within the X-ray irradiation area on the stage. Subsequently, the image 40 is acquired in the same procedure as the inspection device 1.

[0108] For CAM23 and CAM33 of alignment marks 2 and 3 in image 40, ΔX1′, ΔY1′, and Δθ1 are acquired in the same way as in steps S1 and S2 of the first embodiment, and it is determined whether each of these ΔX1′, ΔY1′, and Δθ1 is below a threshold (step S11). If it is determined in step S11 that any of ΔX1′, ΔY1′, or Δθ1 exceeds the threshold, the stage 12 moves by the difference between the value of ΔX1′, ΔY1′, or Δθ1 that exceeds the threshold and the amount of deviation from the threshold, so that all of ΔX1′, ΔY1′, and Δθ1 are below the threshold. In other words, the stage movement mechanism 51 performs one or more movements of the stage 12, such as movement in the X direction, movement in the Y direction, or rotational movement, so that each of ΔX1′, ΔY1′, and Δθ1 is below the threshold. Then, image 40 is acquired again (step S12). If it is determined in step S11 that ΔX1′, ΔY1′, and Δθ1 are all below the threshold, step S12 is not performed, and the process proceeds to step S13. Figure 27 shows the state of the connection device 1D at the time of execution of step S11.

[0109] After step S11 or steps S11 and S12 described above are performed, SA and αr are obtained for the FAM24 and FAM34 of the alignment marks 2 and 3 in the image 40, in the same way as in step S3 of the first embodiment. Then, for each of these SA and αr, it is determined whether or not they are below a threshold, in the same way as in step S4 of the first embodiment (step S13). If step S12 is not performed, SA and αr are obtained from the moiré pattern 41 formed from the FAM24 and 34 of the image 40, which was also used in step S11. If step S12 is performed, SA and αr are obtained from the moiré pattern 41 formed from the FAM24 and 34 of the image 40 newly obtained in step S12.

[0110] If it is determined in step S13 that either SA or αr exceeds the threshold, the stage 12 moves by the difference between the value of SA or αr that exceeds the threshold and the amount of deviation from the threshold, so that all of SA and αr2 are below the threshold (step S14). In other words, similar to step S11, one or more movements of the stage 12, such as movement in the X direction, movement in the Y direction, or rotational movement, are performed so that each of SA and αr is below the threshold. After that, when the holding part 71 descends and the chip 30 is connected to the bonding area 20, the suction of the chip 30 by the holding part 71 is released and the chip 30 is placed on the bonding area 20 (step S15). Figure 29 shows a side view of the connecting device 1D when the connection in step S15 is performed.

[0111] If it is determined in step S13 that SA and αr are below the threshold, step S14 is not performed and the process proceeds to step S15, where the chip 30 is placed on the bonding region 20. After the chip 30 is placed and the holding portion 71 separates from the chip 30, the wafer W is heated, for example, by a heating device, and the solder provided on the bonding region 20 wafer W or chip 30 melts, thereby bonding the chip 30 and the bonding region 20 to each other via the solder. With the above-described connecting device 1D, the chip 30 is placed on the bonding region 20 in such a way that the amount of displacement between the bonding region 20 and the chip 30 is reduced, so that a decrease in the yield of products manufactured from the wafer W and chip 30 can be prevented.

[0112] In this connection device 1D, the misalignment between the wafer W and the chip 30 is reduced by the movement mechanism 51 moving the wafer W together with the stage 12. However, the chip transport mechanism 7 may be configured so that the misalignment is reduced by the movement of the chip 30. Alternatively, instead of connecting the wafer W and the chip 30 by lowering the chip 30 with the chip transport mechanism 7, the stage 12 may be configured to be able to move up and down by the movement mechanism 51, and the connection may be made by raising the wafer W together with the stage 12.

[0113] In the flow chart of Figure 28, after steps S11 and S12 are completed, steps S13 and S14 may be omitted, and the connection between the chip 30 and the wafer W in step S15 may be performed. Therefore, the alignment marks 2 and 3 may consist of only CAM 23 and 33 among CAM 23 and 33 and FAM 24 and 34, and only CAM 23 and 33 may be used when making the connection. However, in order to further reduce the misalignment of the chip 30 with respect to the bonding area 20, it is preferable to include FAM 24 and 34 in the alignment marks 2 and 3, and to also perform steps S13 and S14 to connect the chip 30 to the wafer W.

[0114] Of the technologies described in the first embodiment, those applicable to the second embodiment can be applied as appropriate. Furthermore, while examples were shown in which each inspection device of the first embodiment and the connection device 1D of the second embodiment are configured as devices to which a Talbot-Lowe interferometer is applied by providing a source grating G0, the configuration is not limited to this. Specifically, the devices may be configured without a source grating G0, and still be used as inspection devices or connection devices to which a Talbot interferometer is applied.

[0115] The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above embodiments may be omitted, replaced, modified, or combined in various ways without departing from the scope and spirit of the appended claims.

[0116] G1 Phase grating (gritz) G2 Absorption grating (gritz) W Semiconductor wafer (wafer) 11 X-ray irradiation unit 12 Stage 13 Detection unit 14 Grating movement mechanism 100 Control unit

Claims

1. An inspection apparatus comprising: an X-ray irradiation unit; a first grid and a second grid, each having a plurality of slits arranged sequentially in the direction of X-ray irradiation from the X-ray irradiation unit and arranged in a direction perpendicular to the irradiation axis of the X-rays; a holding unit that holds a substrate, which is a first member on which a first mark is formed, and a second member, which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or planned to be connected to the substrate, as an object to be irradiated with the X-rays, between the X-ray irradiation unit and the first grid or between the first grid and the second grid in the irradiation direction; a detection unit on which the X-rays are irradiated via the object to be irradiated, the first grid and the second grid; a grid moving mechanism that moves at least one of the first grid and the second grid as a moving grid in the direction of the arrangement of the slits of the moving grid; and an information acquisition unit that obtains information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained based on the output from the detection unit on which the X-rays are irradiated via the moving grid at different positions.

2. The inspection apparatus according to claim 1, wherein a third grating having a plurality of slits arranged in a direction perpendicular to the irradiation axis is provided closer to the X-ray irradiation unit than the first grating and the object to be irradiated, and the X-rays are irradiated to the detection unit through the third grating.

3. The inspection apparatus according to claim 1, wherein each of the first mark and the second mark includes a portion forming a straight line, and the holding portion holds the object to be irradiated with X-rays such that each of the straight lines extends in a direction different from the arrangement direction of the slits in the moving grid.

4. The inspection apparatus according to claim 3, wherein the straight line is a straight line that forms part of the outer shape of the first mark or the second mark, or a straight line that forms a group of straight lines arranged in a direction different from the extension direction in order to form a moiré pattern by overlapping the first mark and the second mark.

5. The inspection apparatus according to claim 3, wherein the holding part holds the object to be irradiated with X-rays during X-ray irradiation such that, when viewed in the direction of X-ray irradiation, the straight lines provided by each of the first and second marks form an angle of 45° with the arrangement direction of the slits of the moving grating.

6. The inspection apparatus according to claim 4, wherein the first mark comprises a first pre-determination mark and a first post-determination mark having different shapes from each other, the second mark comprises a second pre-determination mark and a second post-determination mark having different shapes from each other, and the information acquisition unit acquires information on the positional relationship between the substrate and the second member based on the first post-determination mark and the second post-determination mark, depending on whether the positional relationship between the first pre-determination mark and the second pre-determination mark is appropriate or not.

7. The inspection apparatus according to claim 6, wherein the first pre-determination mark and the second pre-determination mark each comprise the straight lines extending in different directions from each other as part of the outer shape of the mark, and each of the first post-determination mark and the second post-determination mark is a group of straight lines arranged in a direction different from the extension direction in order to form a moiré pattern by the overlap of the first post-determination mark and the second post-determination mark.

8. The inspection device according to claim 7, wherein the outlines of the first priority mark and the second priority mark are square, and one of the first priority mark and the second priority mark is formed in a ring shape so as to surround the other in the image.

9. The inspection apparatus according to claim 7, wherein the first post-determination mark and the second post-determination mark each comprise one linear arrangement region and another linear arrangement region in which the extension directions of the lines are different from each other, and the moiré pattern is formed by the overlap of each of the one linear arrangement region and the overlap of each of the other linear arrangement regions, respectively.

10. The inspection apparatus according to claim 9, wherein the extension direction of each line forming the group of lines in one linear arrangement region for the first mark and the extension direction of the lines forming the group of lines in the other linear arrangement region coincides with the extension direction of any of the lines forming the outline of the first pre-determination mark, and the extension direction of each line forming the group of lines in one linear arrangement region for the second mark and the extension direction of the lines forming the group of lines in the other linear arrangement region coincides with the extension direction of any of the lines forming the outline of the first pre-determination mark.

11. The inspection apparatus according to claim 6, wherein the holding unit holds the first member and the second member such that the first pre-determination mark and the first post-determination mark, and the second pre-determination mark and the second post-determination mark are located within the irradiation area irradiated by the X-rays, and acquires the image including the first pre-determination mark and the first post-determination mark, and the second pre-determination mark and the second post-determination mark in a single step.

12. The inspection apparatus according to claim 1, wherein the holding portion comprises a first holding portion and a second holding portion for holding the first member and the second member, respectively, and a relative movement mechanism is provided to change the relative position of the first holding portion and the second holding portion so as to move the position on the first member to which the second member is to be connected and the position of the second member in a direction perpendicular to the X-ray irradiation axis, and the relative distance between the first member and the second member in the X-ray irradiation direction is changed, the X-ray irradiation portion irradiates the first member and the second member, which are separated from each other, with X-rays, and a control unit is provided to control the operation of the relative movement mechanism so as to connect the first member and the second member based on information obtained regarding the positional relationship between the first mark and the second mark.

13. The inspection apparatus according to claim 1, wherein the second member is a chip configured as an electronic component.

14. A step of irradiating an X-ray unit with X-rays in a state in which a first grating and a second grating, each having a plurality of slits arranged in a direction perpendicular to the irradiation axis of the X-rays, are sequentially provided in the direction of X-ray irradiation from the X-ray irradiation unit; a holding step of holding a substrate, which is a first member and has a first mark formed on it, and a second member, which is aligned with the substrate in the irradiation direction and has a second mark formed on it and is connected to or planned to be connected to the substrate, as the object to be irradiated with the X-rays, between the X-ray irradiation unit and the first grating or between the first grating and the second grating in the irradiation direction, by a holding unit; a step of receiving the X-rays that have passed through the object to be irradiated, the first grating and the second grating with a detection unit; a step of irradiating the detection unit with the X-rays via the object to be irradiated, the first grating and the second grating; a step of moving at least one of the first grating and the second grating as a moving grating in the direction of the arrangement of the slits of the moving grating by a grating moving mechanism. An inspection method comprising the steps of: obtaining information regarding the positional relationship between the first mark and the second mark from images of the first mark and the second mark obtained by an information acquisition unit based on the output from the detection unit in which the X-rays are irradiated through the moving grid at different positions; 15. The inspection method according to claim 14, wherein a third grating having a plurality of slits arranged in a direction perpendicular to the irradiation axis is provided closer to the X-ray irradiation section than the first grating and the object to be irradiated, and the step of irradiating the detection section with X-rays is the step of irradiating the detection section with X-rays via the third grating.

16. The inspection method according to claim 14, wherein each of the first mark and the second mark includes a portion that forms a straight line, and the holding step is a step in which the holding portion holds the object to be irradiated with X-rays such that each straight line extends in a direction different from the arrangement direction of the slits in the moving grid.

17. The inspection method according to claim 14, wherein the first mark comprises a first pre-determination mark and a first post-determination mark having different shapes from each other, and the second mark comprises a second pre-determination mark and a second post-determination mark having different shapes from each other, and the step of obtaining the information comprises a first determination step of determining whether the positional relationship between the first pre-determination mark and the second pre-determination mark is appropriate, and a second determination step performed in accordance with the first determination step of determining whether the positional relationship between the substrate and the second member is appropriate based on the first post-determination mark and the second post-determination mark.

18. The inspection method according to claim 14, comprising the steps of: holding the first member and the second member respectively with the first holding part and the second holding part that constitute the holding part; irradiating the detection part with X-rays irradiating the first member and the second member which are separated from each other with X-rays; and, based on information obtained regarding the positional relationship between the first mark and the second mark, using a relative movement mechanism to move the position on the first member where the second member is to be connected and the position of the second member in a direction perpendicular to the X-ray irradiation axis, thereby changing the relative positions of the first holding part and the second holding part so as to change the relative distance between the first member and the second member in the X-ray irradiation direction, and connecting the first member and the second member.

19. The inspection method according to claim 14, wherein the holding step is a holding step of holding the substrate which is the first member and the second member connected to the substrate as objects to be irradiated with X-rays by the holding part, and the substrate to which the second member is connected first and the substrate to which the second member is connected later are called the first substrate and the second substrate, respectively, and the method includes a step of determining the position to which the second member is connected to the second substrate based on information regarding the positional relationship between the first mark on the first substrate and the second mark on the second member connected to the first substrate.

20. The inspection apparatus according to claim 1, wherein the holding part holds the substrate which is the first member and the second member connected to the substrate as objects to be irradiated with X-rays; a connecting device for connecting the second member to the substrate before it is transported to the inspection apparatus; and a transport mechanism for transporting the substrate from the connecting device to the inspection apparatus, wherein the connecting device comprises a first holding part and a second holding part that hold the first member and the second member facing each other, and a relative movement mechanism for connecting the first member and the second member by changing the relative position of the first holding part and the second holding part in a direction intersecting the direction of opposition between the first member and the second member, respectively, and the substrate to which the second member is first connected and the substrate to which the second member is later connected are referred to as the first substrate and the second substrate, respectively. A component connection system to a substrate, wherein the position in which the second component is connected to the second substrate is determined by the relative movement mechanism based on information regarding the positional relationship between the first mark on the first substrate and the second mark on the second component connected to the first substrate.

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