Substrate treatment method and substrate treatment device

Abstract

The present invention performs an appropriate plasma treatment on an edge part of a substrate while suppressing the effects of the plasma on a central section of the substrate.　Provided is a substrate treatment device comprising: a chamber that accommodates one or a plurality of substrates in an upright state; a liquid supply line that supplies a liquid into the chamber; a vacuum pump that is connected to an upper part of the chamber, and that forms a vacuum in a space in the chamber above a liquid surface in a state in which the liquid is present in the chamber so that a section of the substrate is exposed from the liquid surface; a plasma generator that is arranged in the upper part of the chamber, and that performs a plasma treatment on the section of the substrate exposed from the liquid surface; and a control module that controls each part of the substrate treatment device.

Description

Substrate processing method and substrate processing apparatus

[0001] This application relates to a substrate processing method and a substrate processing apparatus.

[0002] In semiconductor manufacturing processes, there is a demand for plasma treatment of the edges of substrates (e.g., wafers). For example, there is a demand to remove only the film (e.g., organic film, inorganic film, metal film) from the edges of a substrate that has been deposited over the entire surface of the substrate by plasma treatment, or to remove the film (e.g., organic film, inorganic film, metal film) (including residues, particles, etc.) located at the edges of the substrate by plasma treatment. Such plasma treatments include ashing, etching, and cleaning. There is also a demand for forming a film (e.g., organic film, inorganic film, metal film) only on the edges of the substrate by plasma treatment.

[0003] Methods for ashing the resist film (sometimes simply called resist) on a substrate include chemical treatment (such as SPM cleaning) and dry plasma treatment (such as oxygen plasma). In chemical treatment, for example, the substrate is immersed in a chemical solution to remove the resist on the substrate, and then the substrate is rinsed with ultrapure water. In dry plasma treatment, for example, the substrate is placed in a chamber, the chamber is evacuated, and then oxygen plasma or the like is generated to remove the resist on the substrate by plasma.

[0004] As an apparatus for etching the edges of a substrate by plasma treatment, for example, the one described in U.S. Patent No. 2012 / 0074099 (Patent Document 1) is known. In this apparatus, a gas supply plate is placed above the central part of the substrate (the part inside the edge), and the distance between the gas supply plate and the substrate is shortened to suppress the generation of plasma in the central part of the substrate, while plasma is generated around the edges of the substrate that are not covered by the gas supply plate, thereby etching only the edges of the substrate.

[0005] U.S. Patent No. 2012 / 0074099

[0006] Conventional methods of ashing resist films on substrates using chemical solutions require large quantities of chemicals. Furthermore, chemical ashing is limited to batch processing due to its low resist removal rate. There is also the problem of significant damage to metal (wiring, etc.) caused by the chemicals. Additionally, chemical solutions alone are insufficient for removing the hardened layer, requiring heating to over 150°C, which leads to particle generation due to popping caused by high-temperature processing. Moreover, to process only the substrate edges, the central part of the substrate must be protected with some kind of film or other material.

[0007] Conventional methods of ashing resist films on substrates using dry plasma treatment involve a high-temperature process that raises the substrate temperature to approximately 250°C. This can lead to the generation of particles due to popping, which may adhere to the substrate. Furthermore, the strong oxidizing power of dry plasma can etch the silicon in the substrate, resulting in silicon loss. There is also a risk of device damage and deterioration of electrical properties. Therefore, unless the plasma area is limited to only the edges of the substrate, the central part of the substrate will also be affected by the plasma treatment. Additionally, the temperature generated in the plasma treatment area may affect the central part of the substrate.

[0008] In the apparatus described in Patent Document 1, the boundary between the space where the plasma is maintained and the space where the plasma is suppressed is not clear, and the gas pressure boundary also changes continuously. As a result, the film deposition at the boundary of the etching region becomes incomplete, and it is possible that unwanted areas are etched or necessary areas are not etched.

[0009] The present invention aims to solve at least some of the problems described above. One objective of the present invention is to suppress the influence of plasma on the central part of the substrate and to perform plasma treatment appropriately on the edges of the substrate. Another objective of the present invention is to suppress the influence of heat generated in the plasma treatment area on the central part of the substrate. Another objective of the present invention is to suppress the adhesion of particles generated in the plasma treatment area to the central part of the substrate.

[0010] According to one aspect of the present invention, a substrate processing apparatus is provided, comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a vacuum pump connected to the upper part of the chamber, which forms a vacuum in the space within the chamber above the liquid surface when there is liquid in the chamber such that a part of the substrate is exposed above the liquid surface; a plasma generator disposed at the upper part of the chamber, which performs plasma processing on the part of the substrate exposed above the liquid surface; and a control module for controlling each part of the substrate processing apparatus.

[0011] According to one aspect of the present invention, a substrate processing method is provided, which includes the steps of: immersing a substrate in a liquid in a chamber such that a portion of the circumferential edge of the substrate is exposed above the liquid surface; forming a vacuum region above the liquid surface in the chamber; and performing plasma processing on a portion of the circumferential edge of the substrate while that portion of the circumferential edge of the substrate is exposed above the liquid surface.

[0012] A plan view of the substrate Wf being processed by plasma treatment according to one embodiment. A cross-sectional view of the substrate Wf being processed by plasma treatment according to one embodiment. A longitudinal cross-sectional view of the water vapor plasma treatment apparatus according to one embodiment, viewed from the side. A longitudinal cross-sectional view of the water vapor plasma treatment apparatus according to one embodiment, viewed from the front. An enlarged view of the vicinity of the plasma region of the water vapor plasma treatment apparatus according to one embodiment. An enlarged view of the vicinity of the plasma region illustrating an example of cleaning the substrate notch. An enlarged view of the vicinity of the plasma region illustrating an example of cleaning the substrate notch. An enlarged view of the vicinity of the plasma region illustrating an example of cleaning the substrate corner. An enlarged view of the vicinity of the plasma region illustrating an example of cleaning the substrate corner. An example configuration of a parallel plate type / dielectric barrier discharge type plasma treatment apparatus. An example configuration of a plasma jet type plasma treatment apparatus. An example configuration of a substrate chuck for loading a substrate into the chamber of the plasma treatment apparatus. An example configuration of a chamber. Another example of a substrate rotation mechanism. An explanatory diagram showing the procedure for installing a substrate into the substrate rotation mechanism of another example. An example configuration of a plasma treatment apparatus when introducing a gas for plasma treatment into the chamber. Modification example 1 of the plasma treatment apparatus. Modification example 2 of the plasma treatment apparatus. An example of a flowchart showing the flow of plasma treatment according to one embodiment. An explanatory diagram illustrating an example of substrate cleaning in a chamber where plasma processing is performed. An example of a flowchart showing the flow of the QDR cleaning process. Another example of a flowchart showing the flow of the QDR cleaning process. An example of a configuration for controlling the liquid level in the chamber. Another example of a configuration for controlling the liquid level in the chamber. An example of a substrate processing apparatus configuration including a plasma processing apparatus / module.

[0013] Embodiments of the present invention will be described below with reference to the drawings. Note that the drawings are schematic in order to facilitate understanding of the features, and the dimensional ratios of each component may not be the same as those of the actual components.

[0014] (Substrate Configuration) Figure 1 shows a plan view of a substrate Wf that is the target of plasma processing according to one embodiment. Figure 2 shows a cross-sectional view of a substrate Wf that is the target of plasma processing according to one embodiment. The substrate Wf is, for example, a semiconductor wafer (hereinafter also simply referred to as a wafer) having a generally circular shape. The disclosures in this specification are not limited to semiconductor wafers, but are applicable to polygonal substrates such as squares, and other substrates or targets of processing of any shape and type.

[0015] In Figures 1 and 2, the substrate Wf includes an edge portion 200 and a central portion 300 inside the edge portion 200, along the radial direction of the substrate Wf. The edge portion 200 is set within a predetermined range (for example, a predetermined range of 20 mm or less) from the outer edge (outermost end) 201 of the substrate Wf. The substrate W1 also has a first surface (hereinafter also referred to as the front surface), which is shown as the top surface in Figure 2, and a second surface (hereinafter also referred to as the back surface), which is shown as the bottom surface in Figure 2. The central portion 300 of the front surface and / or back surface of the substrate Wf includes a device area on which semiconductor devices, MEMS, etc., are formed. The device area may coincide with the central portion 300 or be smaller than the central portion 300.

[0016] In semiconductor manufacturing processes, there is a demand for plasma treatment of the edge portions 200 of the substrate Wf. For example, as shown in Figure 2, there are cases where it is necessary to remove only the film 10 (e.g., organic film, inorganic film, metal film) on the edge portions 200 of a film 10 (e.g., organic film, inorganic film, metal film) that has been deposited over the entire front surface of the substrate Wf by plasma treatment. Figure 2(a) shows a substrate Wf in which the film 10 on the edge portions 200 of the substrate Wf has been removed by plasma treatment, leaving the film 10 in the central portion 300 of the front surface.

[0017] Furthermore, although not shown in the diagram, there are cases where it is necessary to remove films (e.g., organic films, inorganic films, metal films) that are mainly present only on the edge portion 200 of the substrate Wf by plasma treatment. Films mainly present only on the edge portion 200 include residues of films such as resists, particles, etc. Such plasma treatments include ashing, etching, and cleaning. Ashing refers to the process of removing organic films such as resists using dry plasma. Etching refers to the process of removing part or all of films, mainly metals, glass, or semiconductors, using plasma. Cleaning refers to the process of removing residues, particles, and other unwanted substances using plasma.

[0018] In addition, there are cases where it is necessary to deposit a film (for example, an organic film, an inorganic film, or a metal film) only on the edges of the substrate by plasma treatment.

[0019] (Plasma Processing Apparatus) Figure 3A is a longitudinal cross-sectional view of a plasma processing apparatus 100 according to one embodiment, viewed from the side. Figure 3B is a longitudinal cross-sectional view of a plasma processing apparatus 100 according to one embodiment, viewed from the front. Figure 3C is an enlarged view of the vicinity of the plasma region 113 of the plasma processing apparatus 100 according to one embodiment. First, an example of removing the resist 20 on a substrate Wf by ashing treatment with water vapor plasma using the plasma processing apparatus 100 will be described. In this embodiment, liquid vapor (water vapor) is supplied from the liquid 125 in the chamber 101 to the space above the liquid surface 126 in the chamber 101.

[0020] As shown in Figures 3A and 3B, the plasma processing apparatus 100 (also referred to as the plasma processing module 100) according to this embodiment mainly comprises a chamber 101 which is a vacuum chamber, a plurality of rollers 140 which are rotating mechanisms arranged inside the chamber 101 (in the internal space of the chamber 101), a waveguide 110 for introducing microwaves into the chamber 101, and a microwave generator 115 connected to the waveguide 110. The plasma processing apparatus 100 also includes a control module (controller) 800, and each part of the plasma processing apparatus 100 is controlled by the control module 800.

[0021] The control module 800 is configured to control various parts of the plasma processing apparatus 100 and can consist of, for example, a general-purpose computer and / or a dedicated computer equipped with an input / output interface with an operator. The control module 800 includes, for example, a processor and a non-temporary storage device. The storage device stores programs, data, etc. In the control module 800, the processor controls the operation of the plasma processing apparatus 100 based on the program commands stored in the storage device.

[0022] Although Figure 3A and other figures show an example in which one substrate Wf is placed in the chamber 101, a configuration in which multiple substrates Wf are placed in the chamber 101 for batch processing is also possible. In this case, a separate rotation mechanism (multiple rollers 140) may be provided for each substrate Wf, or a common rotation mechanism may be provided for some or all of the substrates (for example, multiple rollers 140 connected along the rotation axis at the positions of each roller 140 shown in Figure 3B). Similarly, in other embodiments described later, a configuration in which multiple substrates Wf are placed in the chamber 101 for batch processing is also possible.

[0023] Chamber 101 is provided with a liquid supply port 151 for introducing liquid 125 into the chamber 101, and a liquid supply line 152 is connected to the liquid supply port 151. The liquid supply line 152 is connected to a liquid supply source. The liquid supply line 152 is provided with a valve 153 (on-off valve or flow control valve) for opening and closing the flow path. The liquid supply line 152 may also be provided with a pump or other components for controlling the liquid supply line 152. When generating water vapor plasma, water is used as the liquid 125. As water, pure water such as DIW or any other water suitable for semiconductor processes can be used. In addition, Chamber 101 is provided with a liquid outlet 154 for discharging liquid 125 from Chamber 101, and a liquid discharge line 155 is connected to the liquid outlet 154. The liquid discharge line 155 is provided with a valve 156 (on-off valve or flow control valve) for opening and closing the flow path. The liquid discharge line 155 may also be provided with a pump or other components for controlling the liquid discharge line 155. By switching the open and closed states of valves 153 and 156, liquid 125 can be supplied to and discharged from the chamber 101. The liquid supply line 152 may include liquid lines inside and outside the chamber 101. The liquid discharge line 155 may also include liquid lines inside and outside the chamber 101. The liquid line inside the chamber 101 is, for example, a liquid line that passes through the wall of the chamber 101.

[0024] Furthermore, the chamber 101 is provided with an exhaust port 104 to which a vacuum pump 130 is connected, so that the inside of the chamber 101 is evacuated by the vacuum pump 130. The internal pressure of the chamber 101 (above the liquid level 126) is maintained at, for example, about 1 to 10 kPa.

[0025] Multiple rollers 140 are configured to hold the substrate Wf upright within the chamber 101, and each roller 140 rotates to rotate the substrate Wf (see arrows in Figure 3B). The multiple rollers 140 support the outer edge 201 of the substrate Wf at multiple points. Each roller 140 is, for example, constricted toward the center in the thickness direction along the axis of rotation, and is configured to receive the outer edge 201 of the substrate Wf at the constricted portion. The multiple rollers 140 are connected to any rotational power source such as a motor 141, and the rotation of the motor 141 causes each roller 140 to rotate, thereby rotating the substrate Wf. Each roller 140 may have its own individual motor 141, or multiple rollers 140 may be rotated by power from a single motor 141. The multiple rollers 140 may be connected to any rotational power source such as a motor 141 via a power transmission mechanism such as a pulley, belt, gear, or reducer. The rotating shaft of the roller 140, which receives power from any rotational power source such as the motor 141, is connected to the roller 140 inside the chamber 101 via a suitable seal that seals the chamber 101, thereby preventing leakage of the liquid 125 from the chamber 101.

[0026] The substrate Wf held in the chamber 101 may be in a completely vertical position, or it may be tilted from the vertical as long as the plasma treatment can be performed with the desired quality and range. In other words, the orientation of the substrate Wf may be vertical or oblique as long as the plasma treatment can be performed with the desired quality and range.

[0027] The waveguide 110 comprises a waveguide body 111a, a waveguide section 111 surrounded by the waveguide body 111a and propagating microwaves from the microwave generator 115, and an antenna 112 provided at the tip of the waveguide section 111. The waveguide section 111 is, for example, a cavity surrounded by the waveguide body 111a. The waveguide section 111 supplies microwaves via the antenna 112 to the vicinity of the edge portion 200 of the substrate Wf exposed from the liquid surface 126 of the liquid 125, and the microwaves cause water vapor (H ２By decomposing (0) and generating active species radicals (H, O, OH), plasma is generated near the substrate Wf. These radicals (H, O, OH) react with the photoresist (resist), and the resist is desorbed as CO gas, thereby ashing and removing the resist from the substrate Wf.

[0028] In this configuration, the height of the liquid surface 126 of the liquid 125 is adjusted so that only the edge portion 200 (Figure 1) on the upper part of the substrate Wf is exposed above the liquid surface 126 of the liquid 125. Then, the space above the liquid surface 126 (the space between the liquid surface 126 and the inner wall of the chamber 101) is evacuated / reduced in pressure, and as shown in Figures 3A and 3B, plasma (plasma region 113) is formed only in the space above the liquid surface 126, and no plasma is generated in the liquid 125. In other words, as shown in Figure 3C, only the edge portion 200 of the substrate Wf that is exposed above the liquid surface 126 of the liquid 125 comes into contact with the plasma of the plasma region 113 and is subjected to plasma treatment. Furthermore, by rotating the substrate Wf, the portion of the edge portion 200 of the substrate Wf that is exposed above the liquid surface 126 is sequentially moved along the circumferential direction of the substrate, and plasma treatment can be applied to the entire circumference of the edge portion 200 of the substrate Wf. Furthermore, when plasma processing a substrate of any shape, the substrate of any shape can be rotated by predetermined angles to process the edges 200. Water vapor is supplied from the liquid 125 (water in this example) in the chamber 101 to the space above the liquid surface 126 in the chamber 101.

[0029] Furthermore, as shown in Figure 3A, since the plasma region 113 is limited to the vicinity of the antenna 112 of the waveguide 110, the plasma processing apparatus 100 can be configured to perform plasma processing by adjusting the position of the waveguide 110 (plasma generator) along a direction perpendicular to the surface of the substrate Wf (front-to-back direction, X direction in Figure 3A), thereby bringing the plasma region 113 into contact with only the front surface of the substrate Wf, or both the front and back surfaces of the substrate Wf, or only the back surface of the substrate Wf. The position of the waveguide 110 (plasma generator) in the front-to-back direction may also be adjusted using a known actuator such as a motor.

[0030] Further, according to the present embodiment, as shown in FIG. 3A, above the liquid surface 126 of the liquid 125, a vacuum region is formed by the liquid surface 126 and the inner wall of the chamber 101, so that there is an advantage that the vacuum region can be reduced and the vacuum evacuation time can be shortened.

[0031] In the above embodiment, the configuration in which the edge portion 200 of the substrate Wf is exposed from the liquid surface 126 has been described. However, the portion exposed from the liquid surface 126 may be any portion of the substrate Wf to be subjected to plasma treatment. That is, any portion of the substrate Wf to be subjected to plasma treatment may be exposed upward from the liquid surface 126, and the non-treatment region may be immersed in the liquid 125 below the liquid surface 126.

[0032] Here, ashing by water vapor plasma has been taken as an example, but the plasma treatment may be etching, cleaning, film formation, or ashing other than water vapor plasma. Depending on the type of plasma treatment, the type of the liquid 125 may be selected and / or a processing gas may be introduced as necessary. When introducing a processing gas, as an example, alcohols such as ethylene glycol and glycerin having a lower saturated vapor pressure than water can be selected as the liquid.

[0033] According to the present embodiment, at least the following effects can be obtained. (1) During the plasma treatment, since the portion (central portion 300) inside the edge portion 200 of the substrate Wf is immersed in the liquid 125, it is possible to suppress the central portion of the substrate Wf from being affected by the heat during the plasma treatment. (2) During the plasma treatment, since the portion (central portion 300) inside the edge portion 200 of the substrate Wf is immersed in the liquid 125, it is possible to suppress the central portion of the substrate Wf from being affected by the particles generated during ashing or etching treatment. (3) During the plasma treatment, since the portion (central portion 300) inside the edge portion 200 of the substrate Wf is immersed in the liquid 125, the portion other than the edge portion 200 to be plasma-treated (central portion 300 of the substrate Wf) is not exposed to the plasma region 113, so that a plasma treatment region can be formed (partitioned). Thereby, the boundary between the plasma treatment region and the non-treatment region can be made clear.

[0034] (Processing of Notch Area) Figures 3D and 3E are enlarged views of the vicinity of the plasma region illustrating an example of cleaning a substrate notch area using the plasma processing apparatus 100. In these figures, the plasma region 113 indicates the cleaning region to be cleaned by plasma processing, and the cleaning region is limited to the notch area 202 between the outer edge 201 of the substrate Wf and the liquid surface 126 of the liquid 125.

[0035] Within the edge portion 200 of the substrate Wf, the notched portion 202 has a more complex shape compared to other parts, and therefore may require special cleaning. In this case, the substrate Wf is cleaned by keeping the notched portion 202 stationary in the plasma region 113 (Figure 3D), or by rotating the notched portion 202 back and forth in a short stroke near the plasma region 113 as shown by the arrow 210 (Figure 3E). The short stroke can be, for example, a range where at least a part of the notched portion 202 overlaps the plasma region 113, or a range where at least a part of the notched portion 202 is above the liquid surface 126. The notched portion 202 may also be moved to the top of the substrate Wf using a substrate rotation mechanism (multiple rollers 140), or the substrate Wf may be placed in the chamber 101 with the notched portion 202 at the top of the substrate Wf. The cleaning of the notch portion 202 may be performed by plasma treatment using water vapor plasma, similar to the ashing treatment using water vapor plasma described above, or by cleaning using other plasma treatments. The substrate rotation mechanism can be a mechanism including multiple rollers 140, a rotating stage 144 (described later), or any other rotation mechanism capable of rotating the substrate Wf.

[0036] Similarly to the above, by adjusting the position of the waveguide 110 (plasma generator) along the direction perpendicular to the surface of the substrate Wf (front-rear direction, X direction in FIG. 3A), the plasma region 113 can be brought into contact with only the front surface of the substrate Wf, or both the front and rear surfaces of the substrate Wf, or only the rear surface of the substrate Wf to perform plasma treatment. The plasma processing apparatus 100 can be configured in this way. Also, it may be configured to adjust the position of the waveguide 110 (plasma generator) in the front-rear direction by a known actuator such as a motor. The same applies to the following embodiments.

[0037] (Processing of corners) FIGS. 3F and 3G are enlarged views of the vicinity of the plasma region for explaining an example of cleaning the corners of a polygonal (e.g., square) substrate Wf using the plasma processing apparatus 100. In these figures, the plasma region 113 indicates a cleaning region to be cleaned by plasma processing, and the cleaning region is limited to the corner 203 between the outer edge 201 of the substrate Wf and the liquid surface 126 of the liquid 125. Note that, for a polygonal substrate Wf, a plasma processing apparatus similar to the plasma processing apparatus 100 used for a circular substrate Wf is used. For the substrate rotation mechanism for rotating the polygonal substrate Wf, for example, the rotation stage 144 shown in FIG. 7 described later and any other rotation mechanism capable of rotating the polygonal substrate Wf are used.

[0038] If the substrate Wf is polygonal, the corners 203 within the edge portion 200 of the polygonal (e.g., quadrilateral) substrate Wf may require particular cleaning compared to the edges. In this case, the substrate Wf is cleaned by keeping the corners 203 stationary in the plasma region 113 (Figure 3F), or by rotating the corners 203 back and forth in a short stroke near the plasma region 113 as shown by the arrow 210 (Figure 3G). The short stroke can be, for example, a range where at least a part of the corner 203 overlaps the plasma region 113, or a range where at least a part of the corner 203 is above the liquid surface 126. The corners 203 may be moved to the top of the substrate Wf using a substrate rotation mechanism (rotating stage, etc.), or the substrate Wf may be placed in the chamber 101 with the corners 203 at the top of the substrate Wf. In one example, a short stroke may be defined as the range in which the vertex of the corner 203 / substrate Wf overlaps with the plasma region 113, or the range in which the vertex of the corner 203 / substrate Wf is above the liquid surface 126. In another example, a substrate rotation mechanism (such as a rotating stage) may be used to move the vertex of the corner 203 / substrate Wf to the top of the substrate Wf, or when placing the substrate Wf in the chamber 101, the vertex of the corner 203 / substrate Wf may be positioned at the top of the substrate Wf before placing the substrate Wf in the chamber 101. Cleaning of the corner 203 may be a plasma treatment using water vapor plasma, similar to the ashing treatment using water vapor plasma described above, or it may be cleaning using other plasma treatments.

[0039] As described above, the plasma processing apparatus 100 can be configured to perform plasma processing by adjusting the position of the waveguide 110 (plasma generator) along a direction perpendicular to the surface of the substrate Wf (front-to-back direction, X direction in Figure 3A), thereby bringing the plasma region 113 into contact with only the front surface of the substrate Wf, or both the front and back surfaces of the substrate Wf, or only the back surface of the substrate Wf. Alternatively, the position of the waveguide 110 (plasma generator) in the direction perpendicular to the substrate surface / front-to-back direction may be adjusted using a known actuator such as a motor. The same applies to the following embodiments.

[0040] (Other examples of plasma generation methods) Figure 4A shows a plasma processing apparatus 100 using a parallel plate type / dielectric barrier discharge type plasma generator. Figure 4B shows a plasma processing apparatus 100 using a plasma jet type plasma generator.

[0041] In addition to the microwave plasma generator (waveguide 110, or waveguide 110 + microwave generator 115) described above, the plasma generator used as the plasma source can be a parallel plate type / dielectric barrier discharge type (Figure 4A), a plasma jet type (Figure 4B), or any other type of plasma generator. The plasma jet type (Figure 4B) plasma generator can directly blow ashing gas, cleaning gas, etching gas, and deposition gas onto the processing area of ​​the substrate Wf. When plasma processing is performed on both sides of the substrate Wf with a plasma jet, the jet nozzles 172 may be mounted on both sides of the substrate Wf, or the position of the jet nozzles 172 may be moved by a moving mechanism (a moving mechanism driven by a known actuator such as a motor) so that the jet is blown onto both sides of the substrate Wf.

[0042] The plasma processing apparatus 100, which uses a parallel plate / dielectric barrier discharge type plasma generator as shown in Figure 4A, is equipped with parallel plate electrodes 170 positioned to sandwich the edge portion 200 of the substrate Wf exposed from the liquid surface 126 of the liquid 125. One electrode of the parallel plate electrodes 170 is connected to a high-frequency power supply (RF power supply) 171, and the other electrode is electrically grounded to, for example, a chamber 101. In this apparatus, plasma is generated between the electrodes of the parallel plate electrodes 170, and the edge portion 200 of the substrate Wf exposed from the liquid surface 126 is plasma-treated. The other configurations are the same as in Figures 3A to E, so a detailed explanation is omitted.

[0043] The plasma processing apparatus 100, which uses a plasma jet type plasma generator as shown in Figure 4B, is equipped with a jet nozzle 172. A gas supply source 174 is connected to the jet nozzle 172 via a flow controller 173, and a high-frequency power supply 171 is connected to the jet nozzle 172. The gas (plasma jet) that has been plasma-generated by high-frequency power in the jet nozzle 172 is blown onto the edge portion 200 of the substrate Wf that is exposed from the liquid surface 126. The other configurations are the same as in Figures 3A to E, so a detailed explanation is omitted.

[0044] (Substrate Installation Method) Figure 5 is a schematic diagram showing the configuration of a chuck mechanism 160 for loading a substrate Wf into the chamber 101 of the plasma processing apparatus 100. The chuck mechanism 160 comprises arms 161 facing each other, one or more (two in this example) chucks 162 provided on each arm 161, and a chuck body 160a (see Figure 17) to which the two arms 161 are connected at their base ends. The chuck body 160a is provided with a mechanism for opening and closing the two arms 161. The chuck body 160a is also provided with a mechanism for rotating the two arms 161 to move the substrate Wf between a horizontal and a vertical position as needed. The chucks 162 have substantially the same shape as, for example, a roller 140, and are constricted toward the center in the thickness direction, and are configured to receive the outer edge 201 side of the substrate Wf in the constricted portion. The chuck 162 may be fixed to each arm 161 in a way that prevents rotation, or it may be mounted to each arm 161 in a way that allows it to rotate. If the chuck 162 is made rotatable (rotatable) to each arm 161, slippage between the substrate Wf and the chuck 162 during substrate chucking can be suppressed.

[0045] To place the substrate Wf into the chamber 101, first, the substrate Wf is moved between the arms 161 and the chucks 162, which are spaced apart at a distance greater than the diameter of the substrate Wf (Figure 5(a)). Next, the arms 161 are brought closer together so that the substrate Wf is held between the chucks 162 on both sides, thereby holding / chucking the substrate Wf into the chuck mechanism 160 (Figure 5(b)). At this time, if the chuck mechanism 160 chucks the substrate Wf in a horizontal position, a rotation mechanism is provided in the chuck mechanism 160 (chuck body 160a) to position the substrate Wf vertically when it is brought into the chamber 101. After that, the substrate Wf held by the chuck mechanism 160 is brought into the chamber 101 and placed on the multiple rollers 140 (Figure 5(c)). Next, the arm 161 of the chuck mechanism 160 is opened to separate it from the substrate Wf, and the chuck mechanism 160 is moved out of the chamber 101 (Figure 5(d)). The substrate Wf is removed from the chamber 101 in the reverse order of the above procedure.

[0046] Figures 5(c) and 5(d) show an example in which the substrate Wf is introduced into the chamber 101 with liquid 125 present. However, the substrate Wf may be introduced into the chamber 101 without liquid 125, and the liquid 125 may be added to the chamber 101 after the substrate Wf has been introduced.

[0047] Figure 6 shows an example of the configuration of the chamber 101. As shown in the figure, the upper wall of the chamber 101 can be configured as a lid 105, and the waveguide 110 can be attached to the lid 105. The lid 105 is connected to the main body of the chamber 101 (the part of the chamber 101 other than the lid 105) via a hinge, for example, so that the chamber 101 can be opened and closed. A coaxial cable for microwave transmission is connected to the waveguide 110 from the microwave generator 115, and the coaxial cable for microwave transmission is movable along with the movement of the lid 105. A mechanism for opening and closing the lid 105 in response to a control signal from the control module 800 may be provided. The mechanism for opening and closing the lid 105 can be configured, for example, by a known actuator such as a motor.

[0048] In this configuration, first, the lid 105 of the chamber 101 is opened (Figure (a)), the substrate Wf held by the chuck mechanism 160 is loaded into the chamber 101 (Figure (b)), the substrate Wf is held by the multiple rollers 140, and then the chuck mechanism 160 is retracted from the chamber 101 (Figure (c)). After that, the lid 105 is closed to seal the inside of the chamber 101, and the inside of the chamber 101 is evacuated. The substrate Wf is removed by the reverse procedure of the above steps.

[0049] Figure 6 shows an example in which the substrate Wf is introduced into the chamber 101 with liquid 125 present. However, the substrate Wf may be introduced into the chamber 101 without liquid 125, the liquid 125 may be added to the chamber 101 after the substrate Wf has been introduced, and then the chamber 101 may be evacuated.

[0050] (Other examples of rotating mechanisms) Figure 7 shows another example of a substrate rotating mechanism. In Figure 7, the liquid supply port 151, liquid supply line 152, valve 153, liquid outlet 154, liquid outlet line 155, and valve 156 are omitted. In this example, as shown in Figure 7, a rotating stage 144 is placed inside the chamber 101 instead of the multiple rollers 140. The rotating shaft 145 of the rotating stage 144 is connected to any rotating power source such as a motor 146, and the rotating stage 144 is rotated by any rotating power source such as a motor 146. The rotating shaft 145 of the rotating stage 144 may also be connected to any rotating power source such as a motor 141 via a power transmission mechanism such as a pulley, belt, gear, or reducer. The rotating shaft 145 is connected to the rotating stage 144 inside the chamber 101 via a suitable seal that seals the space between it and the chamber 101, and the seal prevents leakage of liquid 125 from the chamber 101.

[0051] The rotating shaft 145 is a hollow shaft, and a passage 145a is formed inside the rotating shaft 145, which is fluidly connected to an opening that opens to the mounting surface 144a of the rotating stage 144. This passage 145a is fluidly connected to a vacuum pump 148 via a gas-liquid separation tank 147. A liquid discharge line 149 for discharging the separated liquid is connected to the gas-liquid separation tank 147. The liquid discharge line 149 may be equipped with a valve, and may also be equipped with a pump and other components to control the liquid discharge line 149. In this configuration, when the substrate Wf is placed on the mounting surface 144a of the rotating stage 144, the vacuum pump 148 creates a vacuum between the substrate Wf and the mounting surface 144a of the rotating stage 144, and vacuum-adsorbs the substrate Wf to the mounting surface 144a. After the substrate Wf is vacuum-adsorbed to the mounting surface 144a of the rotating stage 144, the substrate Wf is rotated by rotating the rotating stage 144. Since the space between the mounting surface 144a of the rotating stage 144, which is submerged in liquid 125, and the substrate Wf is drawn by a vacuum pump 148 via a gas-liquid separation tank 147, it is possible to suppress the entry of liquid into the vacuum pump 148, and a vacuum can be efficiently formed between the substrate Wf and the mounting surface 144a. If a water-sealed vacuum pump is used as the vacuum pump 148, the installation of the gas-liquid separation tank 147 can be omitted.

[0052] Figure 8 is an explanatory diagram showing the procedure for installing a substrate into a substrate rotation mechanism in another example. Note that the lid 105 and the opening and closing operation of the lid 105 are omitted in this explanation. First, the substrate Wf held by the chuck mechanism 160 is loaded into the chamber 101 in a vertical position (Figure (a)), and the substrate Wf is held at a predetermined height (Figure (b)). Next, the chuck mechanism 160 is moved toward the rotating stage 144, and the substrate Wf is brought into contact with the mounting surface 144a of the rotating stage 144, and the substrate Wf is vacuum-adsorbed to the mounting surface 144a by suction from the vacuum pump 148 (Figure (c)). After that, the chuck mechanism 160 is opened and retracted from the rotating stage 144 (Figure (d)). Then, the chuck mechanism 160 is raised and retracted from the chamber 101. The substrate Wf is removed in the reverse order of the above procedure.

[0053] (Gas Introduction into Chamber) Fig. 9 shows a configuration example of a plasma processing apparatus when introducing a gas for plasma processing into chamber 101. As shown in the figure, a gas supply port 191 may be provided at the upper part of chamber 101, and a gas supply source 190 may be connected to gas supply port 191. By introducing a gas for plasma processing into chamber 101, it is possible to perform desired film formation, etching, and cleaning.

[0054] In the above-described plasma processing apparatus 100, when performing ashing using water vapor plasma, separately, there is no need to introduce a gas for plasma processing, and ashing can be performed with water vapor generated from the liquid 125 (water) stored in chamber 101. However, even in this case, a gas other than water vapor may be supplied to the vacuum region of chamber 101 (the space above the liquid surface 126 of chamber 101). A gas may be introduced to perform ashing other than water vapor plasma ashing (for example, oxygen plasma ashing). In addition, depending on the type of plasma processing (film formation, etching, cleaning), gases such as CF ４ , O ２ , H ２ , Ar, etc. can be introduced. Note that one or more types of gases may be introduced.

[0055] The gas for film formation can be SiH ４ , NH ３ , PH ３ , TEOS, TiCl ４ , WF ６ , and one or more gases according to the type of the film. The gas for etching can be CF ４ , CHF ３ , C ４ F ８ , CH ２ F ２ , CO, SF ６ , Cl ２ , HBr, BCl ３ , and one or more gases according to the type of etching. The gas for cleaning can be F ２ / HF, NF ３ , C ２ F ６The gas used for ashing may be oxygen or one or more gases depending on the type of cleaning.

[0056] (Measures to prevent droplet splashing on the liquid surface) Figure 10 shows a modified example 1 of the plasma processing apparatus 100. When using a plasma generator other than a plasma jet, as shown in the figure, a gas (such as an inert gas) may be supplied horizontally from a gas supply nozzle 195 near the liquid surface 126 to blow away droplets (water droplets) adhering to the surface of the substrate Wf. Figure 11 shows a modified example 2 of the plasma processing apparatus 100. As shown in the figure, for example, during plasma processing, droplets adhering to the surface of the substrate Wf in the plasma region 113 may be blown away by a plasma jet from a jet nozzle 172. With these configurations, droplets on the surface of the substrate Wf can be blown away during plasma processing, and it is possible to suppress the adverse effect of droplets adhering to the substrate Wf on the plasma processing of the substrate Wf.

[0057] (Flowchart) Figure 12 shows an example of a flowchart illustrating the plasma processing flow. These processes can be carried out by control signals from the control module 800.

[0058] In step S11, the lid 105 of the chamber 101 is opened and the substrate Wf is loaded in. In step S12, the lid 105 of the chamber 101 is closed. The liquid 125 is accumulated in the chamber 101 before or after the substrate Wf is loaded in. In step S13, the inside of the chamber 101 (Figure 3A, etc.), which holds the liquid 125 that exposes the upper edge portion 200 of the substrate Wf from the liquid surface 126, is evacuated. In step S14, the rotation of the substrate Wf is started. When the substrate Wf is to be plasma-treated while stationary (Figures 3D, 3F), the substrate Wf is placed in a predetermined position (with the notched portion / corner portion at the top) when it is loaded into the chamber 101, or after the substrate Wf is loaded into the chamber 101, it is placed in a predetermined position (with the notched portion / corner portion at the top) and then the substrate Wf is made stationary. Furthermore, when plasma processing is performed while the substrate Wf is rotated back and forth (Figures 3E and 3G), the back and forth rotation of the substrate Wf is started. In step S15, plasma is generated in the chamber 101. In step S16, plasma processing is started. In step S17, plasma processing is completed. In step S18, the plasma is stopped. In step S19, the rotation of the substrate Wf is stopped. In step S20, the pressure inside the chamber 101 is increased to atmospheric pressure. In step S21, the lid 105 of the chamber 101 is opened. In step S22, the substrate Wf is removed from the chamber 101. In step S23, the substrate Wf is loaded into a separate cleaning and drying module 507 (Figure 17) from the chamber 101. In step S24, the substrate Wf is subjected to cleaning processing. In step S25, the substrate Wf is subjected to drying processing. In step S26, the substrate Wf is removed from the cleaning and drying module 507.

[0059] (Example of cleaning and drying process) Figure 13 is an explanatory diagram illustrating an example of cleaning a substrate Wf in a chamber 101 where plasma processing is performed. After performing the above-described plasma processing on the substrate Wf in the chamber 101, the substrate Wf may be cleaned by QDR (Quick Dump Rinse) cleaning, which involves supplying cleaning liquid 125a to the chamber 101 (left side of Figure 13) and discharging the cleaning liquid 125a from the chamber 101 (right side of Figure 13) one or more times. The liquid can be, for example, water or alcohols. As water, pure water such as DIW or any other water suitable for semiconductor processes can be used. As alcohols, for example, ethanol can be used. The same liquid may be used for the liquid 125 for plasma processing and the liquid 125a for QDR cleaning, or different liquids may be used. In this specification, liquid 125a may be referred to as cleaning liquid. Furthermore, the cleaning performed on the substrate Wf in the plasma treatment chamber 101 is not limited to QDR cleaning, but may be any type of cleaning.

[0060] The QDR cleaning process is generally as follows: (1) Perform the plasma treatment described above on the substrate Wf in the chamber 101. (2) After the plasma treatment is completed, drain the liquid 125 (water, alcohol, etc.) from the chamber 101. (3) Introduce liquid 125a into the chamber 101. At this time, introduce liquid 125a in an amount that immerses the entire substrate Wf in the liquid 125a. Alternatively, to ensure that the edge portion 200 is exposed at the top of the substrate Wf, the entire substrate Wf may be brought into contact with the liquid 125a by rotating the substrate Wf with the roller 140. Alternatively, the amount of liquid supplied may be increased so that the entire substrate Wf is immersed in the liquid 125a. (4) Drain the liquid 125a from the chamber 101. (5) Perform steps (3) and (4) a predetermined number of times (one or more times). (6) Remove the substrate Wf from the chamber 101.

[0061] Figure 14A is an example of a flowchart showing the flow of the QDR cleaning process. In this example, a substrate Wf is placed in an empty chamber 101, plasma treatment and QDR cleaning are performed on the substrate Wf in the chamber 101, and then the substrate Wf is removed from the empty chamber 101.

[0062] In step S31, the substrate Wf is placed into the chamber 101 without liquid 125. In step S32, liquid 125 is supplied into the chamber 101. In step S33, plasma treatment of the substrate Wf is started in the chamber 101. In step S34, the plasma treatment is finished and the plasma is stopped. In step S35, the liquid 125 used for plasma treatment is discharged from the chamber 101, cleaning liquid 125a is supplied into the chamber 101, and QDR cleaning is performed on the substrate Wf in the chamber 101. The liquid 125a for QDR cleaning is the same as or different from the liquid 125 used for plasma treatment. In step S36, after QDR cleaning, the liquid 125a used for QDR cleaning is discharged from the chamber 101. In step S37, the substrate Wf is removed from the chamber 101.

[0063] Figure 14B is another example of a flowchart showing the flow of the QDR cleaning process. In this example, the substrate Wf is placed into a chamber 101 containing liquid 125, plasma treatment and QDR cleaning are performed on the substrate Wf in the chamber 101, and then the substrate Wf is removed from the chamber 101 containing liquid 125.

[0064] In step S41, the substrate Wf is placed into the chamber 101 containing liquid 125. In step S42, plasma treatment of the substrate Wf is started in the chamber 101. In step S43, the plasma treatment is finished and the plasma is stopped. In step S44, the liquid 125 used for plasma treatment is discharged from the chamber 101, liquid 125a is supplied to the chamber 101, and QDR cleaning is performed on the substrate Wf in the chamber 101. The liquid 125a for QDR cleaning is the same as or different from the liquid 125 used for plasma treatment. In step S45, after QDR cleaning, the liquid 125a used for QDR cleaning is discharged from the chamber 101. In step S46, liquid 125 is placed in the chamber 101. In step S47, the substrate Wf is removed from the chamber 101. The next substrate Wf is placed into the chamber 101 containing liquid 125 (step S41).

[0065] (Liquid Level Control) Figure 15 shows an example of a configuration for controlling the liquid level 126 of the liquid 125 in the chamber 101. In this example, the height of the liquid level 126 in the chamber 101 (liquid level) is set to a predetermined height based on the value of the liquid level 126 detected by the liquid level sensor 180. The predetermined height is, for example, the height at which the edge portion 200 of the substrate Wf is exposed above the liquid level 126. Figure 15 shows a configuration in which the liquid level sensor 180 (for example, a contact-type liquid level sensor) is embedded in the wall of the chamber 101, but the liquid level sensor 180 may also be placed on the inner wall surface of the chamber 101. Alternatively, part or all of the wall of the chamber 101 may be made of a transparent part such as glass that allows the inside of the chamber 101 to be seen from the outside, and the liquid level sensor 180 (for example, an optical-type liquid level sensor) placed outside the chamber 101 may detect the liquid level 126 through the transparent part such as glass. Alternatively, a float-type liquid level sensor 180 may be placed inside the chamber 101. Alternatively, any type of liquid level sensor 180 may be used.

[0066] Figure 16 shows another example of a configuration for controlling the liquid level 126 of the liquid 125 in the chamber 101. In this example, the chamber 101 is divided into an inner tank 181 and an outer tank 183 by an overflow wall 182, and the liquid 125 in the chamber 101 (inner tank 181) is allowed to overflow into the outer tank 183 so that the liquid level 126 reaches a predetermined height. The height of the overflow wall 182 is set to a predetermined height of the liquid level 126. The predetermined height is, for example, the height at which the edge portion 200 of the substrate Wf is exposed above the liquid level 126. The outer tank 183 is provided with a liquid outlet 157, and a liquid discharge line 158 is connected to the liquid outlet 157, so that the liquid 125 that overflows into the outer tank 183 is discharged as waste liquid via the liquid discharge line 158. A valve 159 may be provided in the liquid discharge line 158, and further, a pump and other components for controlling the liquid discharge line 158 may also be provided. Furthermore, the outer tank 183 is equipped with a leak sensor 184 that detects when the liquid 125 overflows. The liquid discharge line 158 may include liquid lines inside and outside the chamber 101.

[0067] When the liquid leak sensor 184 detects liquid 125 (when the liquid level 126 in the inner tank 181 reaches a predetermined height and liquid 125 begins to overflow), the supply of liquid 125 to the chamber 101 may be stopped, and plasma treatment of the substrate Wf may be performed in that state. Alternatively, even after the liquid 125 overflows, the supply of liquid 125 to the chamber 101 may not be stopped, and plasma treatment of the substrate Wf may be performed while the liquid 125 continues to flow (in this case, the liquid leak sensor 184 may or may not be installed). In this case, since the liquid 125 immersing the substrate Wf continues to flow during plasma treatment, residues, particles, etc. generated during plasma treatment can be discharged into the outer tank 183 by the overflow of liquid 125, further suppressing the adhesion of residues, particles, etc. to the substrate Wf.

[0068] (Example of Substrate Processing Apparatus Configuration) Figure 17 shows an example of the configuration of a substrate processing apparatus 1000 including the plasma processing apparatus (module) described above. As shown in the figure, the substrate processing apparatus 1000 includes a plurality of load ports 501 on which cassettes containing substrates Wf are placed, a transport robot 502, a substrate chuck-mounted robot 504, a chuck mechanism 160, a plurality of plasma processing modules 100 (plasma processing apparatus 100) including a chamber 101 which is a plasma processing chamber (vacuum chamber), a cleaning and drying module 507, and a control module (controller) 800 which controls each part of the substrate processing apparatus 1000. A substrate transfer table 503 is also arranged between the transport robot 502 and the substrate chuck-mounted robot 504. The plasma processing module 100 is any of the plasma processing modules / apparatus in the embodiments described above. The transport robot 502 is configured to move along a rail (not shown) along a row of load ports 501. The substrate chuck-mounted robot 504 is configured to move along a rail 505. The chuck mechanism 160 is configured to be movable on the rail 506. The chuck mechanism 160 is also configured to be rotatable around the rail 506 to change the orientation of the substrate Wf between a horizontal and a vertical orientation. The control module 800 has the same configuration as described above, and here it is configured to control various parts of the substrate processing device 1000. The processor controls the operation of the substrate processing device 1000 based on program commands stored in the memory device. Other components with the same reference numerals as described above are denoted by the same numerals, and detailed explanations are omitted.

[0069] The substrate processing flow in the substrate processing apparatus 1000 is as follows: The transport robot 502 takes out a substrate Wf from a cassette on the load port 501 and places it on the substrate transfer table 503. The substrate chuck-equipped robot 504 receives the substrate Wf from the substrate transfer table 503 and passes the substrate Wf to the chuck mechanism 160. The chuck mechanism 160 receives the substrate Wf from the substrate chuck-equipped robot 504 in a horizontal position, rotates the substrate Wf around the rail 506 so that it is in a vertical position, and then places the substrate Wf into the chamber 101 of a predetermined plasma processing module 100. In the chamber 101, the substrate Wf is subjected to the plasma processing described above. After the plasma processing of the substrate Wf in the chamber 101 is completed, the chuck mechanism 160 takes out the substrate Wf from the chamber 101 in a vertical position, rotates the substrate Wf to a horizontal position, and then passes the substrate Wf to the substrate chuck-equipped robot 504. The board chuck-equipped robot 504 loads the board Wf into the washing and drying module 507. In the washing and drying module 507, the board Wf is washed and dried. The board chuck-equipped robot 504 removes the board Wf from the washing and drying module 507 and places it on the board transfer table 503. The transport robot 502 receives the board Wf from the board transfer table 503 and places the board Wf into a cassette.

[0070] Furthermore, if cleaning (for example, QDR cleaning) is performed in the chamber 101 after plasma treatment, a drying module may be provided instead of the cleaning and drying module 507.

[0071] The present invention can also be described in the following forms.

[0072] [1] According to one embodiment, a substrate processing apparatus for performing plasma processing on a substrate is provided, comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a first vacuum pump connected to the upper part of the chamber; a plasma generator disposed at the upper part of the chamber; a liquid level sensor for detecting the liquid level in the chamber; and a control module for controlling each part of the substrate processing apparatus, wherein the control module controls the supply of the liquid from the liquid supply line to the chamber based on the value detected by the liquid level sensor to adjust the amount of liquid in the chamber so that a part of the substrate is exposed above the liquid level; and controls the first vacuum pump and the plasma generator to form a vacuum in the space in the chamber above the liquid level, and performs plasma processing on the part of the substrate exposed above the liquid level. With the substrate in the chamber, the distance D1 between the center of the substrate in the vertical direction and the liquid level sensor is smaller than the radius R of the substrate. The difference between R and D1 (R-D1) can be, for example, the width of the edge portion of the substrate (e.g., 20 mm or less). The liquid supply line includes liquid lines inside and / or outside the chamber.

[0073] In this configuration, plasma is formed only on the portion of the substrate exposed above the liquid surface, so that only the portion of the substrate above the liquid surface is treated with plasma, while the portion below the liquid surface is not. This allows for a clear separation of the plasma-treated and untreated regions, with the liquid surface acting as the boundary.

[0074] In this configuration, by ensuring that the edges of the substrate are exposed above the liquid surface, the influence of the plasma on the central part of the substrate can be suppressed, allowing for appropriate plasma treatment only on the edges of the substrate. Furthermore, since the plasma treatment is performed with the central part of the substrate covered by liquid, the influence of heat generated in the plasma treatment area on the central part of the substrate can be suppressed. Additionally, since the plasma treatment is performed with the central part of the substrate covered by liquid, the adhesion of particles generated in the plasma treatment area to the central part of the substrate can be suppressed.

[0075] In this configuration, a vacuum region is formed between the liquid surface and the inner wall of the chamber above the liquid surface in the chamber. Compared to the case where the entire chamber is evacuated, the vacuum region can be made smaller, and the vacuum evacuation time can be shortened.

[0076] Furthermore, by using a liquid level sensor, the liquid level can be easily and accurately controlled so that the portion of the substrate to be plasma-treated is exposed above the liquid surface.

[0077] [2] According to one embodiment, a substrate processing apparatus is provided comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a first vacuum pump connected to the upper part of the chamber; a plasma generator positioned at the upper part of the chamber; and a control module for controlling each part of the substrate processing apparatus, wherein the chamber has a first tank connected to the liquid supply line and housing the substrates, and a second tank separated from the first tank by an overflow wall into which the liquid overflowing from the first tank flows, and the overflow wall is configured to adjust the amount of liquid in the first tank so that a part of the substrate is exposed above the liquid surface, and the control module controls the first vacuum pump and the plasma generator to form a vacuum in the space within the chamber above the liquid surface, and to perform plasma processing on the part of the substrate exposed above the liquid surface. With the substrates arranged in the chamber, the distance D2 between the center of the substrates in the vertical direction and the upper surface of the overflow wall is smaller than the radius R of the substrates. The difference between R and D2 (R-D2) can be, for example, the width of the edge portion of the substrate (e.g., 20 mm or less). The liquid supply line includes liquid lines inside and / or outside the chamber.

[0078] In this configuration, plasma is formed only on the portion of the substrate exposed above the liquid surface, so that only the portion of the substrate above the liquid surface is treated with plasma, while the portion below the liquid surface is not. This allows for a clear separation of the plasma-treated and untreated regions, with the liquid surface acting as the boundary.

[0079] In this configuration, by ensuring that the edges of the substrate are exposed above the liquid surface, the influence of the plasma on the central part of the substrate can be suppressed, allowing for appropriate plasma treatment only on the edges of the substrate. Furthermore, since the plasma treatment is performed with the central part of the substrate covered by liquid, the influence of heat generated in the plasma treatment area on the central part of the substrate can be suppressed. Additionally, since the plasma treatment is performed with the central part of the substrate covered by liquid, the adhesion of particles generated in the plasma treatment area to the central part of the substrate can be suppressed.

[0080] In this configuration, a vacuum region is formed in areas other than the volume occupied by the liquid (above the liquid surface in the first tank of the chamber and between the liquid surface and the inner wall of the chamber in the second tank). Compared to the case where the entire chamber is evacuated, the vacuum region can be made smaller, and the vacuum evacuation time can be shortened.

[0081] Furthermore, the overflow wall allows for easy and precise control of the liquid level so that the portion of the substrate to be plasma-treated is exposed above the liquid surface. Additionally, by continuously flowing the liquid in the chamber while allowing it to overflow during plasma treatment, particles such as residue generated by the plasma treatment can be overflowed along with the liquid, further suppressing particle adhesion to the substrate.

[0082] [3] According to one embodiment, the chamber further comprises a rotating mechanism for holding the substrate and rotating the substrate.

[0083] In this configuration, by rotating the substrate, the outer periphery of the substrate (e.g., the edge) can be exposed above the liquid surface along its entire circumference, and the outer periphery of the substrate (e.g., the edge) can be plasma-treated along its entire circumference while the central part of the substrate (the part inside the edge) is immersed in the liquid (covered by the liquid).

[0084] [4] In one embodiment, the rotating mechanism has a plurality of rollers that support the outer edge of the substrate at a plurality of locations and rotate the substrate.

[0085] This configuration allows for the implementation of a simple rotation mechanism for rotating the substrate within the chamber.

[0086] [5] In one embodiment, the rotating mechanism has a mounting surface for adsorbing the substrate and a rotating stage for adsorbing the substrate onto the mounting surface and rotating it.

[0087] This configuration allows for the implementation of a simple rotation mechanism for rotating the substrate within the chamber.

[0088] [6] In one embodiment, the rotating stage further comprises a gas-liquid separation tank fluidly connected to a passage opening to the aforementioned surface of the rotating stage, and a second vacuum pump connected to the gas-liquid separation tank.

[0089] In this configuration, since the space between the mounting surface of the rotating stage, which is submerged in liquid, and the substrate is drawn by a vacuum pump via a gas-liquid separation tank, it is possible to suppress the entry of liquid into the vacuum pump and efficiently create a vacuum between the substrate and the mounting surface.

[0090] [7] In one embodiment, the chamber is further equipped with a chuck that holds the substrate between both sides and loads it into the chamber.

[0091] This configuration allows for a simple mechanism to be constructed for loading the substrate into the chamber.

[0092] [8] In one embodiment, the chuck is configured to receive the substrate in a horizontal position and to load the substrate into the chamber in a vertical position.

[0093] This configuration makes it easy to transport and house the circuit board in an upright position within the chamber.

[0094] [9] In one embodiment, the chamber has a lid that opens and closes the upper part of the chamber, and the plasma generator is attached to the lid.

[0095] This configuration allows the plasma generator to be positioned inside the chamber without interfering with the process of loading substrates into the chamber.

[0096]

[10] In one embodiment, the chamber is further equipped with a nozzle that blows gas onto a portion of the substrate exposed above the liquid surface, and the gas from the nozzle blows away any liquid droplets adhering to the portion of the substrate exposed above the liquid surface.

[0097] This configuration makes it possible to suppress the effect of droplets adhering to the part that is discharged from the liquid surface of the substrate on the plasma processing.

[0098]

[11] In one embodiment, the plasma generator is positioned in a direction perpendicular to the substrate so as to perform plasma treatment on only the front surface of the substrate, on both the front and back surfaces of the substrate, or only on the back surface of the substrate.

[0099] In this configuration, depending on the application, one or both sides of the substrate can be subjected to plasma treatment.

[0100]

[12] According to one embodiment, the plasma treatment includes at least one of ashing, etching, cleaning, and film deposition.

[0101] According to this configuration, the substrate processing apparatus can be configured to perform plasma processing such as ashing, etching, cleaning, and film deposition, depending on the application.

[0102]

[13] In one embodiment, the liquid is water, and the plasma treatment is ashing with a water vapor plasma using water vapor evaporated from the water.

[0103] This configuration allows for effective ashing with a simple setup.

[0104]

[14] According to one embodiment, the chamber further comprises one or more gas supply lines for supplying one or more gases, wherein the plasma treatment includes at least one of ashing, etching, cleaning, and film deposition using the gases.

[0105] According to this configuration, a substrate processing apparatus can be configured to perform various plasma treatments by supplying an appropriate gas to the plasma processing space above the liquid surface in the chamber.

[0106]

[15] In one embodiment, the plasma generator is a microwave plasma generator, a parallel plate plasma generator, a dielectric barrier discharge plasma generator, or a plasma jet source.

[0107] This configuration allows for the construction of a substrate processing apparatus using various types of plasma generators.

[0108]

[16] According to one embodiment, the system further comprises a cleaning and drying module for cleaning and drying the substrate after the plasma treatment.

[0109] This configuration allows for cleaning and drying of the substrate after plasma treatment.

[0110]

[17] In one embodiment, the control module performs cleaning on the substrate in the chamber after the completion of plasma treatment on the substrate. The cleaning method can be QDR cleaning or any other cleaning method. Means / mechanisms for performing cleaning on the substrate in the chamber are provided in association with the chamber (provided in the chamber or movably provided in the chamber). The means / mechanisms for performing cleaning on the substrate in the chamber can be QDR cleaning means / mechanisms comprising a liquid supply line for supplying liquid into the chamber and a liquid discharge line for discharging the liquid from the chamber, or any other cleaning means / mechanisms. The liquid supply line includes liquid lines inside and / or outside the chamber. The liquid discharge line includes liquid lines inside and / or outside the chamber.

[0111] This configuration allows for plasma treatment and cleaning of the substrate within the same chamber.

[0112]

[18] According to one embodiment, the system further comprises a drying module for drying the substrate after cleaning. The drying module may be provided, for example, outside the chamber.

[0113] This configuration allows the substrate to be dried after being cleaned in the plasma processing chamber.

[0114]

[19] In one embodiment, the liquid is water or an alcohol.

[0115] This configuration allows for optimal plasma processing by selecting the appropriate liquid. For example, when performing steam plasmashing, water (e.g., pure water) is kept in the chamber as the steam source. For example, when performing plasma processing such as ashing (other than steam plasmashing), etching, cleaning, or film deposition using introduced gas, alcohols such as ethylene glycol or glycerin, which have a lower saturated vapor pressure than water, are kept in the chamber.

[0116]

[20] In one embodiment, the portion of the substrate exposed from the liquid surface is a circumferential portion of the edge of the substrate, and the central portion of the substrate located inside the edge is covered by the liquid during the plasma treatment.

[0117] In this configuration, by exposing the edges of the substrate above the liquid surface and keeping the central part submerged in the liquid, the influence of the plasma on the central part of the substrate can be suppressed, and plasma treatment can be appropriately applied only to the edges of the substrate. Furthermore, the influence of heat generated in the plasma treatment area on the central part of the substrate can be suppressed. In addition, the adhesion of particles generated in the plasma treatment area to the central part of the substrate can be suppressed. With this configuration, the treated area and the untreated area of ​​the plasma treatment can be clearly separated with the liquid surface as a boundary, and the central part of the substrate can be protected from the plasma.

[0118]

[21] According to one embodiment, a substrate processing method is provided which includes the steps of: immersing a substrate in a liquid in a chamber such that a part of the circumferential direction of the edge portion of the substrate is exposed above the liquid surface; forming a vacuum region above the liquid surface in the chamber; and performing plasma processing on a part of the circumferential direction of the edge portion of the substrate while that part of the circumferential direction of the edge portion of the substrate is exposed above the liquid surface.

[0119] In this configuration, only the portion of the substrate above the liquid surface is subjected to plasma treatment, while the portion below the liquid surface is not. This allows for a clear separation of the plasma-treated and untreated regions, with the liquid surface acting as the boundary.

[0120] This configuration allows plasma treatment to be performed only on the edges of the substrate. Therefore, the influence of the plasma on the central part of the substrate is suppressed, and plasma treatment can be appropriately applied only to the edges. Furthermore, because the plasma treatment is performed with the central part of the substrate covered in liquid, the influence of heat generated in the plasma treatment area on the central part of the substrate can be suppressed. Additionally, because the plasma treatment is performed with the central part of the substrate covered in liquid, the adhesion of particles generated in the plasma treatment area to the central part of the substrate can be suppressed.

[0121] In this configuration, a vacuum region is formed between the liquid surface and the inner wall of the chamber above the liquid surface in the chamber. Compared to the case where the entire chamber is evacuated, the vacuum region can be made smaller, and the vacuum evacuation time can be shortened.

[0122]

[22] According to one embodiment, in the step of performing the plasma treatment, the substrate is rotated so that the plasma treatment is performed over the entire circumference of the edge portion of the substrate.

[0123] In this configuration, by rotating the substrate, the edges of the substrate can be exposed above the liquid surface around its entire circumference. Therefore, the edges of the substrate can be plasma-treated around its entire circumference while the central part of the substrate is immersed in the liquid (covered by the liquid).

[0124]

[23] According to one embodiment, in the step of performing the plasma treatment, the substrate is kept stationary, or the substrate is rotated back and forth while the portion of the substrate that is to be treated with plasma is in contact with the plasma, and the plasma treatment is performed on a part of the circumferential direction of the edge portion of the substrate.

[0125] This configuration allows plasma treatment to be performed only on a specific portion of the circumferential edge of the substrate. Furthermore, if the substrate is rotated back and forth while the specific portion of the substrate remains in contact with the plasma, the plasma treatment of that specific portion of the substrate can be accelerated.

[0126]

[24] According to one embodiment, the plasma treatment is performed on the notch portion or corner portion of the substrate.

[0127] This configuration allows for appropriate plasma treatment to be performed on notch areas, which have a more complex shape compared to other parts of the substrate and require separate cleaning or other processing, or on corner areas, which require separate cleaning or other processing compared to the edges of the substrate.

[0128]

[25] According to one embodiment, a substrate processing apparatus is provided comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a first vacuum pump connected to the upper part of the chamber, which forms a vacuum in the space within the chamber above the liquid surface when there is liquid in the chamber such that a part of the substrate is exposed above the liquid surface; a plasma generator disposed at the upper part of the chamber, which performs plasma processing on the part of the substrate exposed above the liquid surface; and a control module for controlling each part of the substrate processing apparatus. The liquid supply line includes a liquid line inside and / or outside the chamber.

[0129] In this configuration, plasma is formed only on the portion of the substrate exposed above the liquid surface, so that only the portion of the substrate above the liquid surface is treated with plasma, while the portion below the liquid surface is not. This allows for a clear separation of the plasma-treated and untreated regions, with the liquid surface acting as the boundary.

[0130] In this configuration, by ensuring that the edges of the substrate are exposed above the liquid surface, the influence of the plasma on the central part of the substrate can be suppressed, allowing for appropriate plasma treatment only on the edges of the substrate. Furthermore, since the plasma treatment is performed with the central part of the substrate covered by liquid, the influence of heat generated in the plasma treatment area on the central part of the substrate can be suppressed. Additionally, since the plasma treatment is performed with the central part of the substrate covered by liquid, the adhesion of particles generated in the plasma treatment area to the central part of the substrate can be suppressed.

[0131] In this configuration, a vacuum region is formed between the liquid surface and the inner wall of the chamber above the liquid surface in the chamber, thus reducing the size of the vacuum region and shortening the vacuum evacuation time.

[0132] While embodiments of the present invention have been described above, the embodiments of the invention described above are for the purpose of facilitating understanding of the present invention and do not limit it. The present invention can be modified and improved without departing from its spirit, and of course, the present invention includes equivalents thereof. Furthermore, any combination of embodiments and modifications is possible to the extent that at least some of the above-mentioned problems can be solved or at least some of the effects can be achieved, and any combination or omission of each component described in the claims and specification is possible.

[0133] All disclosures, including the specification, claims, drawings, and abstract, of U.S. Patent No. 2012 / 0074099 (Patent Document 1) are incorporated into this application in whole by reference. This application claims priority under Japanese Patent Application No. 2024-181823, filed on 17 October 2024. All disclosures, including the specification, claims, drawings, and abstract, of Japanese Patent Application No. 2024-181823, filed on 17 October 2024 are incorporated into this application in whole by reference.

[0134] 10 Film 20 Resist 100 Plasma processing apparatus (plasma processing module) 101 Chamber (plasma processing chamber) 102 Transfer stage 103 Water vapor inlet 104 Exhaust port 105 Cover 110 Waveguide 110a Waveguide body 111 Waveguide section 112 Antenna 113 Plasma region 115 Microwave generator 120 Water vapor source 121 Water 122 Water vapor 125, 125a Liquid 126 Liquid level 130 Vacuum pump 140 Roller 141 Motor 144 Rotating stage 144a Mounting surface 145 Rotating shaft 145a Passageway 146 Motor 147 Gas-liquid separation tank 148 Vacuum pump 149 Liquid discharge line 151 Liquid supply port 152 Liquid supply line 153 Valve 154 Liquid outlet 155 Liquid outlet line 156 Valve 157 Liquid outlet 158 ​​Liquid outlet line 159 Valve 160 Chuck mechanism 160a Chuck body 161 Arm 162 Claw 170 Parallel plate electrode 171 High-frequency power supply 172 Jet nozzle 173 Flow controller 174 Gas supply source 180 Liquid level sensor 181 Inner tank 182 Overflow wall 183 Outer tank 184 Leak sensor 190 Gas supply source 191 Gas supply port 195 Nozzle 200 Edge 201 Outer edge 202 Notch 203 Corner 300 Center 501 Load port 502 Transfer robot 503 Substrate transfer table 504 Substrate chuck mounted robot 505 Rail 506 Rail 507 Cleaning and Drying Module 800 Control Module (Controller) 1000 Substrate Processing Device Wf Substrate (Wafer)

Claims

1. A substrate processing apparatus comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a first vacuum pump connected to the upper part of the chamber; a plasma generator positioned at the upper part of the chamber; a liquid level sensor for detecting the liquid level in the chamber; and a control module for controlling each part of the substrate processing apparatus, wherein the control module controls the supply of the liquid from the liquid supply line to the chamber based on the value detected by the liquid level sensor to adjust the amount of liquid in the chamber so that a portion of the substrate is exposed above the liquid level; the control module controls the first vacuum pump and the plasma generator to form a vacuum in the space within the chamber above the liquid level, and performs plasma processing on the portion of the substrate exposed above the liquid level.

2. A substrate processing apparatus comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a first vacuum pump connected to the upper part of the chamber; a plasma generator positioned at the upper part of the chamber; and a control module for controlling each part of the substrate processing apparatus, wherein the chamber has a first tank connected to the liquid supply line and housing the substrates, and a second tank separated from the first tank by an overflow wall into which the liquid overflowing from the first tank flows, and the overflow wall is configured to adjust the amount of liquid in the first tank so that a portion of the substrate is exposed above the liquid surface, and the control module controls the first vacuum pump and the plasma generator to form a vacuum in the space within the chamber above the liquid surface, and to perform plasma processing on the portion of the substrate exposed above the liquid surface.

3. A substrate processing apparatus according to claim 1 or 2, further comprising a rotating mechanism for holding the substrate in the chamber and rotating the substrate.

4. A substrate processing apparatus according to claim 3, wherein the rotating mechanism has a plurality of rollers that support the outer edge of the substrate at a plurality of locations and rotate the substrate.

5. A substrate processing apparatus according to claim 3, wherein the rotating mechanism has a mounting surface for adsorbing the substrate and a rotating stage for adsorbing the substrate onto the mounting surface and rotating it.

6. A substrate processing apparatus according to claim 5, further comprising: a gas-liquid separation tank fluidly connected to a passage opening to the front surface of the rotating stage; and a second vacuum pump connected to the gas-liquid separation tank.

7. A substrate processing apparatus according to claim 1 or 2, further comprising a chuck for loading the substrate into the chamber while holding it between both sides.

8. A substrate processing apparatus according to claim 7, wherein the chuck is configured to receive the substrate in a horizontal position and to transport the substrate into the chamber in a vertical position.

9. A substrate processing apparatus according to claim 1 or 2, wherein the chamber has a lid that opens and closes the upper part of the chamber, and the plasma generator is attached to the lid.

10. A substrate processing apparatus according to claim 1 or 2, further comprising a nozzle for blowing gas onto a portion of the substrate exposed above the liquid surface within the chamber, wherein the gas from the nozzle blows away liquid droplets adhering to the portion of the substrate exposed above the liquid surface.

11. A substrate processing apparatus according to claim 1 or 2, wherein the plasma generator is positioned along a direction perpendicular to the substrate so as to perform plasma treatment on only the front surface of the substrate, on both the front and back surfaces of the substrate, or only on the back surface of the substrate.

12. A substrate processing apparatus according to claim 1 or 2, wherein the plasma processing includes at least one of ashing, etching, cleaning, and film deposition.

13. A substrate processing apparatus according to claim 1 or 2, wherein the liquid is water, and the plasma processing is ashing by water vapor plasma using water vapor evaporated from the water.

14. A substrate processing apparatus according to claim 1 or 2, further comprising one or more gas supply lines for supplying one or more gases to the chamber, wherein the plasma processing comprises at least one of ashing, etching, cleaning, and film deposition using the gases.

15. A substrate processing apparatus according to claim 1 or 2, wherein the plasma generator is any of a microwave plasma generator, a parallel plate plasma generator, a dielectric barrier discharge plasma generator, or a plasma jet source.

16. A substrate processing apparatus according to claim 1 or 2, further comprising a cleaning and drying module for cleaning and drying the substrate after plasma processing.

17. A substrate processing apparatus according to claim 1 or 2, wherein the control module performs cleaning of the substrate in the chamber after the completion of plasma treatment of the substrate.

18. A substrate processing apparatus according to claim 17, further comprising a drying module for drying the substrate after cleaning.

19. A substrate processing apparatus according to claim 1 or 2, wherein the liquid is water or an alcohol.

20. A substrate processing apparatus according to claim 1 or 2, wherein the portion of the substrate exposed from the liquid surface is a portion of the circumferential direction of the edge of the substrate, and the central portion of the substrate located inside the edge is covered by the liquid during the plasma processing.

21. A substrate processing method comprising: immersing a substrate in a liquid in a chamber such that a portion of the circumferential edge of the substrate is exposed above the liquid surface; forming a vacuum region above the liquid surface in the chamber; and performing plasma processing on a portion of the circumferential edge of the substrate while that portion is exposed above the liquid surface.

22. A substrate processing method according to claim 21, wherein in the step of performing the plasma processing, the substrate is rotated so that the plasma processing is performed over the entire circumference of the edge portion of the substrate.

23. A substrate processing method according to claim 21, wherein in the step of performing the plasma processing, the substrate is kept stationary, or the substrate is rotated back and forth while the portion of the substrate receiving the plasma processing is in contact with the plasma, and the plasma processing is performed on a part of the circumferential direction of the edge portion of the substrate.

24. A substrate processing method according to claim 23, wherein the plasma processing is performed on a notch or corner of the substrate.

25. A substrate processing apparatus comprising: a chamber for housing one or more substrates in an upright position; a liquid supply line for supplying liquid into the chamber; a vacuum pump connected to the upper part of the chamber, which creates a vacuum in the space within the chamber above the liquid surface while there is liquid in the chamber such that a portion of the substrate is exposed above the liquid surface; a plasma generator positioned at the upper part of the chamber, which performs plasma processing on the portion of the substrate exposed above the liquid surface; and a control module for controlling each part of the substrate processing apparatus.

Images