Resin composition, cured film, method for producing cured film, electronic component, and semiconductor device

Abstract

The present invention provides a resin composition which brings about both excellent edge cuttability and in-plane film thickness evenness. The resin composition comprises (A) one or more resins selected from the group consisting of polyimides, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers of these, (B1) an organic solvent having a vapor pressure at 20°C of 0.40 kPa or more but less than 2.00 kPa, (B2) an organic solvent having a vapor pressure at 20°C of 0.10 kPa or more but less than 0.40 kPa, and (C) an amide-group-containing amine compound having a vapor pressure at 20°C of 0.01 kPa or more but less than 0.10 kPa. When the mass of the organic solvent (B1) and the mass of the organic solvent (B2) are expressed by BW1 and BW2, respectively, then 0.10 ≤ BW1 / (BW1+BW2) ≤ 0.40 holds.

Description

Resin composition, cured film, method for manufacturing a cured film, electronic component, and semiconductor device.

[0001] The present invention relates to a resin composition, a cured film, a method for producing a cured film, an electronic component, and a semiconductor device.

[0002] Traditionally, polyimide resins, possessing excellent heat resistance and mechanical properties, have been widely used as surface protective films and interlayer insulating films for semiconductor devices. In semiconductor device manufacturing, these resin compositions are used as varnish-like solutions dissolved in solvents. As a coating method, spin coating is commonly used on substrates such as silicon wafers due to its superior uniformity of film thickness within the plane. In recent years, manufacturing processes using large-diameter 300mm wafers have become mainstream in the semiconductor industry. Furthermore, with the increasing integration required to meet the growing demands for semiconductor package functionality and capacity, the uniformity of the coated film within the plane has become increasingly important.

[0003] Low-volatility solvents are used in resin solutions to suppress drying during spin coating and to achieve good in-plane uniformity of film thickness (Patent Documents 1 and 2). It has also been proposed to mix in a low-boiling-point solvent to make the film thickness uniform on the outer edge of the wafer (Patent Document 3). On the other hand, for display applications coated on larger substrates, highly volatile solvents are generally used to improve drying performance during coating and to improve in-plane uniformity of aperture dimensions (Patent Document 4).

[0004] Japanese Patent Publication No. 2002-121382, Japanese Patent Publication No. 2013-15729, Japanese Patent Publication No. 2020-64325, Japanese Patent Publication No. 2023-134943

[0005] However, in the spin coating method described in Patent Documents 1 and 2, the solvent drying was insufficient during the edge-cutting process, which involves cleaning the wafer edges with a solvent. If drying is insufficient, resin may adhere to the edges of the substrate, potentially contaminating the transport system of the coating and developing machine and the inside of the exposure machine.

[0006] Furthermore, since insulating and physical buffering properties are required for protective films of semiconductor devices, a thickness of 5 μm or more is generally necessary. In the technologies described in Patent Documents 3 and 4, the solvent contained in the resin composition dries out too much during spin coating, which presents challenges in forming thick films, such as a decrease in in-plane uniformity of film thickness and an increase in the amount of coated resin.

[0007] To solve the above problems, the present invention has the following configuration.

[0008] [1] A resin composition comprising (A) one or more resins selected from the group consisting of polyimide, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors and copolymers thereof, (B1) an organic solvent having a vapor pressure of 0.40 kPa or more and less than 2.00 kPa at 20°C, (B2) an organic solvent having a vapor pressure of 0.10 kPa or more and less than 0.40 kPa at 20°C, and (C) an amide group-containing amine compound having a vapor pressure of 0.01 kPa or more and less than 0.10 kPa at 20°C, wherein when the mass of the organic solvent (B1) is BW1 and the mass of the organic solvent (B2) is BW2, 0.10 ≤ BW1 / (BW1 + BW2) ≤ 0.40.

[0009] [2] The resin composition according to [1], wherein the (B1) organic solvent is a glycol ether solvent.

[0010] [3] The resin composition according to [1] or [2], wherein when the mass of component (C) is denoted as CW, the CW relative to the mass of the resin composition is 0.0050 or more and 0.050 or less.

[0011] [4] The resin composition according to any one of [1] to [3] further contains (D) a photosensitive agent.

[0012] [5] The resin composition according to any one of [1] to [4], further comprising (E) an organic solvent having a vapor pressure of 6.0 kPa or more and less than 25.0 kPa at 20°C.

[0013] [6] The resin composition according to [5], wherein when the mass of the (E) organic solvent is EW, the EW relative to the mass of the resin composition is 0.00003 or more and 0.00010 or less.

[0014] A cured film obtained by curing the resin composition according to any one of [7] [1] to [6].

[0015] [8] A method for producing a cured film, comprising a step of applying the resin composition according to [1] to [6] onto a substrate by a spin coating method and drying to form a pre-baked film, an exposure step of exposing the pre-baked film through a mask, a development step of developing the exposed pre-baked film, and a heat treatment step of heat-treating the developed pre-baked film.

[0016] [9] An electronic component or a semiconductor device having the cured film according to [7].

[0017]

[10] A semiconductor device in which the cured film according to [7] is disposed as an interlayer insulating film between rewiring layers on a sealing resin substrate on which a semiconductor chip is disposed.

[0018] The resin composition of the present invention can achieve both excellent edge cutability and in-plane uniformity of film thickness.

[0019] It is a cross-sectional view of an example of the semiconductor device of the present invention. It is a figure showing an enlarged cross-section of a pad portion of a semiconductor device having bumps. It is a figure showing a manufacturing method of a semiconductor device having bumps. It is a cross-sectional view of a coil component of an inductor device which is an example of the electronic component of the present invention. It is a figure showing a manufacturing method of a semiconductor device in RDL first.

[0020] Hereinafter, embodiments for carrying out the present invention will be described in detail. However, the present invention is not limited to the following embodiments, and can be variously modified and implemented according to the purpose and application. A numerical range represented by "~" means a range including the numerical values described before and after "~" as a lower limit value and an upper limit value.

[0021] In the present invention, it has been found that by defining the content ratios of a plurality of solvents having different vapor pressures, it is possible to achieve both edge cutability and in-plane uniformity of film thickness when spin-coated. Furthermore, it has been found that by adding a less volatile amine compound, it can be applied to a substrate with a smaller amount of resin.

[0022] Here, the edge cut property generally means the size of the range where resin remains from the wafer edge of the edge cut portion of the obtained coating film by cleaning a range of several millimeters at the outer periphery of the substrate with a solvent in the process of spin-coating the resin composition on the substrate. Regarding this edge cut property, it is preferable that the substrate is exposed at the edge and there is no resin residue.

[0023] The resin composition of the present invention contains (A) one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof (hereinafter sometimes referred to as (A) resin), (B1) an organic solvent having a vapor pressure at 20°C of 0.40 kPa or more and less than 2.00 kPa (hereinafter sometimes referred to as (B1) organic solvent), (B2) an organic solvent having a vapor pressure at 20°C of 0.10 kPa or more and less than 0.40 kPa (hereinafter sometimes referred to as (B2) organic solvent), and (C) an amide group-containing amine compound having a vapor pressure at 20°C of 0.01 kPa or more and less than 0.10 kPa (hereinafter sometimes referred to as component (C)).

[0024] <(A) Resin> The resin composition of the present invention contains (A) resin.

[0025] The polyimide is not particularly limited as long as it has an imide ring. Also, the polyimide precursor is not particularly limited as long as it has a structure that becomes a polyimide having an imide ring by dehydration ring closure, and can contain polyamic acid, polyamic acid ester, etc. The polybenzoxazole is not particularly limited as long as it has an oxazole ring. The polybenzoxazole precursor is not particularly limited as long as it has a structure that becomes a polybenzoxazole having a benzoxazole ring by dehydration ring closure, and can contain polyhydroxyamide, etc. From the viewpoint of heat resistance, polyimide and a polyimide precursor having a cyclic structure are preferable. By forming a cyclic structure, the heat resistance and solvent resistance are dramatically improved. Furthermore, from the viewpoint of alkali solubility, a polyimide precursor is more preferable.

[0026] Polyimide has a structural unit represented by general formula (1), polyimide precursors and polybenzoxazole precursors have a structural unit represented by general formula (2), and polybenzoxazole has a structural unit represented by general formula (3). (A) The resin may contain two or more of these, or it may contain a resin copolymerized of the structural unit represented by general formula (1), the structural unit represented by general formula (2), and the structural unit represented by general formula (3).

[0027]

[0028] In general formula (1), V represents a 4- to 10-valent organic group having 4 to 40 carbon atoms, and W represents a 2- to 8-valent organic group having 4 to 40 carbon atoms. a and b each independently represent integers from 0 to 6, and it is preferable that a + b > 0 in order to provide alkali solubility. １ and R ２ R represents a group selected from the group consisting of hydroxyl groups, carboxyl groups, sulfonic acid groups, and thiol groups, and multiple R １ and R ２ These may be the same or different.

[0029]

[0030] In general formula (2), X and Y each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms. ３ and R ４ Each independently represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms. c and d each independently represent an integer from 0 to 4, and it is preferable that c + d > 0. e and f represent the number of carboxyl groups or ester groups, and each independently represents an integer from 0 to 2. Preferably, it is 1 or 2. From the viewpoint of solubility in alkaline developer and the solution stability of the resulting resin composition, R included in general formula (2) ３ and R ４ Preferably, each of these atoms contains 10 mol% to 90 mol% hydrogen atoms.

[0031] In general formula (2), in the case of a polyimide precursor, X has an aromatic group, e > 0, and has a structure in which a carboxyl group or carboxyester group is located at the ortho position of the aromatic amide group, and an imide ring is formed by dehydration cyclization.

[0032] Furthermore, in general formula (2), in the case of a polybenzoxazole precursor, Y has an aromatic group, d > 0, and has a hydroxyl group at the ortho position of the aromatic amide group, and has a structure that forms a benzoxazole ring by dehydration cyclization.

[0033]

[0034] In general formula (3), T represents a divalent organic group having 4 to 40 carbon atoms, and U represents a tetravalent organic group having 4 to 40 carbon atoms.

[0035] In the present invention, the resin (A) preferably has a weight-average molecular weight of 3,000 to 200,000. Within this range, the resin has appropriate solubility in an alkaline developer, resulting in a high contrast between exposed and unexposed areas, and allowing the formation of a desired pattern. From the viewpoint of solubility in an alkaline developer, a molecular weight of 100,000 or less is more preferable, and 50,000 or less is even more preferable. Furthermore, from the viewpoint of improving elongation, a molecular weight of 10,000 or more is preferable. Here, the molecular weight can be measured by gel permeation chromatography (GPC) and obtained by conversion from a standard polystyrene calibration curve.

[0036] (A) The resin may have other structural units in addition to the structural units represented by general formula (1), general formula (2), or general formula (3). Examples of other structural units include, but are not limited to, cardo structures and siloxane structures. In this case, it is preferable that the structural units represented by general formula (1), general formula (2), or general formula (3) be the main constituent units. Here, the main constituent units mean that of 100 mol% of the total structural units of the resin (A), any of the structural units represented by general formula (1), general formula (2), or general formula (3) constitute 50 mol% or more, more preferably 70 mol% or more, and even more preferably 90 mol% or more.

[0037] In the above general formula (1), V-(R １ ), in the above general formula (2), (OH) ａ -X-(COOR ｃ ), represents the residue of an acid dianhydride, and T in the above general formula (3) represents the residue of a dicarboxylic acid. V is a tetravalent to decavalent organic group having 4 to 40 carbon atoms, and among them, it is preferably an organic group having 4 to 40 carbon atoms containing an aromatic ring or a cycloaliphatic group. X is a divalent to octavalent organic group having 4 to 40 carbon atoms, and T is a divalent organic group having 4 to 40 carbon atoms, and among them, it is preferably an organic group having 4 to 40 carbon atoms containing an aromatic ring or a cycloaliphatic group.

[0038] ​​​​(A) Examples of acid residues constituting the resin include dicarboxylic acid residues such as terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, naphthalenedicarboxylic acid, or aromatic dicarboxylic acids such as bis(carboxyphenyl)propane, or aliphatic dicarboxylic acids such as cyclohexane dicarboxylic acid or adipic acid. Examples of trivalent acid residues include tricarboxylic acids such as trimellitic acid and trimesic acid. Examples of tetravalent acid residues include pyromellitic acid, 3,3',4,4'-biphenyltetracarboxylic acid, 2,3,3',4'-biphenyltetracarboxylic acid, 2,2',3,3'-biphenyltetracarboxylic acid, 3,3',4,4'-diphenylethertetracarboxylic acid, 3,3',4,4'-benzophenonetetracarboxylic acid, 2,2',3,3'-benzophenonetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)propane, 2,2-bis(2,3-dicarboxyphenyl)propane, 1,1-bis(3,4-dicarboxyphenyl)ethane, 1,1-bis(2,3-dicarboxyphenyl)ethane, bis(3,4-dicarboxyphenyl)methane, bis(2,3-dicarboxyphenyl)methane, bis( Examples of acid residues that can be used to constitute the resin (A) include, but are not limited to, 3,4-dicarboxyphenyl) ether, 1,2,5,6-naphthalenetetracarboxylic acid, 9,9-bis(3,4-dicarboxyphenyl)fluorene, 9,9-bis{4-(3,4-dicarboxyphenoxy)phenyl}fluorene, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 2,3,5,6-pyridinetetracarboxylic acid, 3,4,9,10-perylenetetracarboxylic acid, 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane, and aromatic tetracarboxylic acids, butanetetracarboxylic acid, cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, etc. Two or more of these may be used as acid residues constituting the resin (A), but it is preferable that the resin (A) contains 1 to 40 mol% of tetracarboxylic acid residues in 100 mol% of acid residues.Furthermore, from the viewpoint of solubility in alkaline developing solutions and photosensitivity, it is preferable that the resin (A) contains 50 mol% or more of acid residues having a hydroxyl group in 100 mol% of the acid residues.

[0039] The acidic component constituting the acid residue preferably has an aromatic ring from the viewpoint of heat resistance, and more preferably a trivalent or tetravalent organic group having 6 to 30 carbon atoms as shown below.

[0040]

[0041] In the formula, R ５ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R ６ and R ７ represents a hydrogen atom or a hydroxyl group.

[0042] In the above general formula (1), W - (R ２ ) ｂ In the above general formula (2), (OH) ｄ -Y- (COOR ４ ) ｆ, and in the above general formula (3), U represents a diamine residue. (A) Specific examples of diamine residues constituting the resin include hydroxyl group-containing diamines such as bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)methylene, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxy)biphenyl, and bis(3-amino-4-hydroxyphenyl)fluorene, and 3-sulfonic acid-4,4' - Diamines containing sulfonic acid such as diaminodiphenyl ether, diamines containing thiol groups such as dimercaptophenylenediamine, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, 1,4-bis(4-aminophenoxy)benzene, benzine, m- Phenylenediamine, p-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenoxyphenyl)sulfone, bis(4-aminophenoxy)biphenyl, bis{4-(4-aminophenoxy)phenyl} ether, 1,4-bis(4-aminophenoxy) ether, 2,2'-dimethyl-4,4'-diaminobiphenyl, 2,2'-diethyl-4,4'-diaminobiphenyl, 3,3'-dimethyl-4,4'-diaminobiphenyl, Aromatic diamine residues such as 3,3'-diethyl-4,4'-diaminobiphenyl, 2,2',3,3'-tetramethyl-4,4'-diaminobiphenyl, 3,3',4,4'-tetramethyl-4,4'-diaminobiphenyl, and 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, as well as compounds in which some of the hydrogen atoms of these aromatic rings are substituted with C1-C10 alkyl groups, fluoroalkyl groups, halogen atoms, 2,4-diamino-1,3,5-triazine (guanamine), 2,4-diamino-6-methyl-1,3,Examples include diamine residues having nitrogen-containing heteroaromatic rings such as 5-triazine (acetoganamine) and 2,4-diamino-6-phenyl-1,3,5-triazine (benzoguanamine), silicone diamines such as 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(p-aminophenyl)-1,1,3,3-tetramethyldisiloxane, 1,3-bis(p-aminophenethyl)-1,1,3,3-tetramethyldisiloxane, and 1,7-bis(p-aminophenyl)-1,1,3,3,5,5,7,7-octamethyltetrasiloxane, alicyclic diamine residues such as cyclohexyldiamine and methylenebiscyclohexylamine, and diamine residues with the structures shown below. While two or more types of diamine residues may be used, from the viewpoint of solubility in alkaline developing solutions, it is preferable that the resin (A) contains 60 mol% or more of diamine residues having a hydroxyl group out of 100 mol% of the total diamine residues.

[0043]

[0044] In the formula, R ８ is an oxygen atom, C(CF ３ ) ２ , C (CH ３ ) ２ Represents R ９ ~R １２ These represent a hydrogen atom or a hydroxyl group, respectively.

[0045] Among these, from the viewpoint of improving alkali developability and the transmittance of (A) resin and its cured film, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, m-phenylenediamine, p-phenylenediamine, 1,4-bis(4-aminophenoxy)benzene, 9,9-bis(4-aminophenyl)fluorene, and diamines having the structures shown below are preferred.

[0046]

[0047] In the formula, R ８ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R ９ ~R １０ These represent a hydrogen atom or a hydroxyl group, respectively.

[0048] Particularly preferred are 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 1,4-bis(4-aminophenoxy)benzene, and diamines having the structures shown below.

[0049]

[0050] In the formula, R ８ is an oxygen atom, C(CF ３ ) ２ , or C(CH ３ ) ２ Represents R ９ ~R １０ These represent a hydrogen atom or a hydroxyl group, respectively.

[0051] These diamines can be used as diamines, or as diisocyanate compounds obtained by reacting diamines with phosgene, or as trimethylsilylated diamines.

[0052] Diamine residues having an aliphatic polysiloxane structure may be copolymerized within a range that does not reduce heat resistance. Copolymerizing diamine residues having an aliphatic polysiloxane structure can improve adhesion to the substrate. Specifically, examples include copolymers of bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc., in a concentration of 1 to 15 mol% of the total diamine residues. Copolymerizing within this range is preferable in terms of improving adhesion to substrates such as silicon wafers and not reducing solubility in alkaline solutions.

[0053] (A) The ends of the resin can be reacted with an end-sealing agent. By sealing the ends of the polymer with a monoamine having a functional group selected from the group consisting of hydroxyl groups, carboxyl groups, sulfonic acid groups, and thiol groups, the dissolution rate of the resin in an alkaline aqueous solution can be adjusted to a preferred range. Alternatively, by sealing the ends of the polymer with an acid anhydride, acid chloride, or monocarboxylic acid, the dissolution rate in an alkaline aqueous solution can be adjusted to a preferred range.

[0054] Monoamines used as end-capturing agents include 5-amino-8-hydroxyquinoline, 1-hydroxy-7-aminonaphthalene, 1-hydroxy-6-aminonaphthalene, 1-hydroxy-5-aminonaphthalene, 1-hydroxy-4-aminonaphthalene, 2-hydroxy-7-aminonaphthalene, 2-hydroxy-6-aminonaphthalene, 2-hydroxy-5-aminonaphthalene, 1-carboxy-7-aminonaphthalene, 1-carboxy-6-aminonaphthalene, 1-carboxy-5-aminonaphthalene, 2-carboxy-7-aminonaphthalene, Preferred materials include 2-carboxy-6-aminonaphthalene, 2-carboxy-5-aminonaphthalene, 2-aminobenzoic acid, 3-aminobenzoic acid, 4-aminobenzoic acid, 4-aminosalicylic acid, 5-aminosalicylic acid, 6-aminosalicylic acid, 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid, 3-amino-4,6-dihydroxypyrimidine, 2-aminophenol, 3-aminophenol, 4-aminophenol, 2-aminothiophenol, 3-aminothiophenol, and 4-aminothiophenol. These may be used individually or in combination of two or more to seal the ends of the resin.

[0055] Acid anhydrides, acid chlorides, and monocarboxylic acids used as end-cap encapsulants include phthalic anhydride, maleic anhydride, nadic acid, cyclohexanedicarboxylic acid anhydride, 3-hydroxyphthalic anhydride, 3-carboxyphenol, 4-carboxyphenol, 3-carboxythiophenol, 4-carboxythiophenol, 1-hydroxy-7-carboxynaphthalene, 1-hydroxy-6-carboxynaphthalene, 1-hydroxy-5-carboxynaphthalene, 1-mercapto-7-carboxynaphthalene, 1-mercapto-6-carboxynaphthalene, 1-mercapto-5-carboxynaphthalene, and 3-carboxybenzene. Preferred materials include monocarboxylic acids such as sulfonic acid and 4-carboxybenzenesulfonic acid, and mono-acid chloride compounds in which the carboxyl groups of these are acid-chlorinated; mono-acid chloride compounds in which only the monocarboxyl groups of dicarboxylic acids such as terephthalic acid, phthalic acid, maleic acid, cyclohexanedicarboxylic acid, 1,5-dicarboxynaphthalene, 1,6-dicarboxynaphthalene, 1,7-dicarboxynaphthalene, and 2,6-dicarboxynaphthalene are acid-chlorinated; and active ester compounds obtained by the reaction of mono-acid chloride compounds with N-hydroxybenzotriazole or N-hydroxy-5-norbornene-2,3-dicarboximide. These can be used individually or in combination of two or more.

[0056] The proportion of monoamines introduced into the end-capturing agent is preferably 2 to 50 mol%, and more preferably 2 to 25 mol%, relative to the total amine components in the resin. The proportion of acid anhydrides, acid chlorides, and monocarboxylic acids introduced is preferably 2 to 50 mol%, and more preferably 2 to 25 mol%, relative to the total acid components in the resin.

[0057] End-captives introduced into polymers can be detected by the following methods. For example, a polymer containing an introduced end-captive can be dissolved in an acidic solution, decomposed into amine and acid anhydride components which are the constituent units of the polymer, and the end-captive can be easily detected by gas chromatography (GC) or nuclear magnetic resonance (NMR) measurement. Alternatively, polymers containing an introduced end-captive can be directly detected by pyrolysis gas chromatography (PGC), infrared spectroscopy, and１３ It can also be detected by measuring C-NMR spectra.

[0058] (A) The resin is synthesized by known methods. (A) When the resin is a polyimide precursor, a polyamic acid or a polyamic acid ester, it can be synthesized by, for example, reacting a tetracarboxylic dianhydride with a diamine compound at low temperature, obtaining a diester from a tetracarboxylic dianhydride with an alcohol and then reacting it with an amine in the presence of a condensing agent, or obtaining a diester from a tetracarboxylic dianhydride with an alcohol and then acid-chloridizing the remaining dicarboxylic acid and reacting it with an amine.

[0059] (A) When the resin is a polyhydroxyamide, which is a polybenzoxazole precursor, it can be synthesized, for example, by a condensation reaction between a bisaminophenol compound and a dicarboxylic acid. Specifically, this can be done by reacting a dehydrating condensation agent such as dicyclohexylcarbodiimide (DCC) with an acid and adding the bisaminophenol compound, or by adding a solution of dicarboxylic acid dichloride dropwise to a solution of a bisaminophenol compound to which a tertiary amine such as pyridine has been added.

[0060] (A) When the resin is polyimide, it can be obtained by dehydrating and cyclizing the polyimide precursor (polyamic acid or polyamic acid ester) obtained by the above method by heating or chemical treatment with an acid or base.

[0061] (A) When the resin is polybenzoxazole, it can be obtained by dehydrating and cyclizing the polybenzoxazole precursor (polyhydroxyamide) obtained by the method described above by heating or chemical treatment with an acid or base.

[0062] After polymerization using the method described above, it is desirable to immerse the material in a large amount of water or a methanol / water mixture, precipitate it, filter it, dry it, and isolate it. This precipitation process removes unreacted monomer components and oligomer components such as dimers and trimers, improving the film properties after heat curing.

[0063] (A) The resin content is preferably 20 to 60% by weight of 100% by weight of the resin composition, and more preferably 25 to 40% by weight. By setting it within the above range, an appropriate viscosity for spin coating can be achieved.

[0064] <(B1) Organic Solvent> The resin composition of the present invention contains (B1) an organic solvent with a vapor pressure of 0.40 kPa or more and less than 2.00 kPa at 20°C. By containing an (B1) organic solvent with a high vapor pressure, the resin composition dries more easily during spin coating, improving edge cutting performance. Hereinafter, vapor pressure refers to the vapor pressure at 20°C.

[0065] In the present invention, the (B1) organic solvent is preferably one that dissolves the (A) resin in the present invention. Specifically, it is preferably a glycol ether-based solvent. Specifically, examples include alkylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether (vapor pressure 0.83 kPa at 20°C), ethylene glycol monoethyl ether (vapor pressure 0.71 kPa), propylene glycol monomethyl ether (vapor pressure 1.20 kPa), and propylene glycol monomethyl ether acetate (vapor pressure 0.49 kPa); alkyl acetates such as isobutyl acetate (vapor pressure 1.73 kPa) and butyl acetate (vapor pressure 1.20 kPa); ketones such as methyl propyl ketone (vapor pressure 1.60 kPa), methyl butyl ketone (vapor pressure 1.30 kPa), and cyclopentanone (vapor pressure 1.52 kPa); and alcohols such as butyl alcohol (vapor pressure 0.60 kPa), isobutyl alcohol (vapor pressure 1.07 kPa), 2-methoxyethanol (vapor pressure 0.82 kPa), and 4-methyl-2-pentanol (vapor pressure 0.49 kPa). These solvents may contain two or more types. Propylene glycol monomethyl ether or propylene glycol monomethyl ether acetate is particularly preferred.

[0066] <(B2) Organic Solvent> The resin composition of the present invention contains (B2) an organic solvent with a vapor pressure of 0.10 kPa or more and less than 0.40 kPa at 20°C. By containing an (B2) organic solvent with a low vapor pressure, the resin composition is less likely to dry out, improving coatability and in-plane uniformity of film thickness.

[0067] In the present invention, the (B2) organic solvent is preferably one that dissolves the (A) resin. Furthermore, a polar solvent is preferred from the viewpoint of solubility with the (A) resin. Specifically, examples include N,N-dimethylformamide (vapor pressure 0.37 kPa), N,N-dimethylisobutylamide (vapor pressure 0.36 kPa), γ-butyrolactone (vapor pressure 0.20 kPa), ethyl lactate (vapor pressure 0.30 kPa), propylene glycol monoethyl ether acetate (vapor pressure 0.23 kPa), and diacetone alcohol (vapor pressure 0.15 kPa). Two or more of these solvents may be included. γ-butyrolactone is particularly preferred.

[0068] In the resin composition of the present invention, when the mass of (B1) organic solvent is BW1 and the mass of (B2) organic solvent is BW2, 0.10 ≤ BW1 / (BW1 + BW2) ≤ 0.40. Within this range, the resin composition will have appropriate drying conditions during spin coating, and a resin composition that achieves both edge-cutting properties and in-plane uniformity of film thickness can be obtained. 0.15 ≤ BW1 / (BW1 + BW2) ≤ 0.38 is preferred, and 0.20 ≤ BW1 / (BW1 + BW2) ≤ 0.35 is more preferred. The total content of (B1) organic solvent and (B2) organic solvent is not particularly limited, but 50 to 2000 parts by mass and 100 to 1500 parts by mass are preferred per 100 parts by mass of (A) resin.

[0069] <(C) Component> The resin composition of the present invention contains (C) an amide group-containing amine compound with a vapor pressure of 0.01 kPa or more and less than 0.10 kPa at 20°C. (B2) By containing a component with a lower vapor pressure than the organic solvent, drying of the resin composition during spin coating is suppressed. Furthermore, by using an amide group-containing amine compound, intermolecular interactions in the resin composition can be suppressed, improving coatability and allowing for coating with a smaller amount when spin coating onto a substrate.

[0070] Specifically, examples include 3-methoxy-N,N-dimethylpropanamide (vapor pressure 0.08 kPa) and N-methyl-2-pyrrolidone (vapor pressure 0.04 kPa). Two or more of these solvents may be included. 3-methoxy-N,N-dimethylpropanamide is particularly preferred.

[0071] When the mass of component (C) above is denoted as CW, it is preferable that the CW relative to the mass of the resin composition is 0.0050 or more and 0.050 or less, more preferably 0.010 or more and 0.040 or less, and even more preferably 0.015 or more and 0.040 or less. Within this range, the amount of coating can be reduced while maintaining edge-cutting properties. If CW is less than 0.0050, the amount of coating may increase. Also, if CW exceeds 0.050, the edge-cutting properties may decrease.

[0072] <(D) Photosensitive Agent> The resin composition of the present invention preferably further contains (D) a photosensitive agent, which imparts photosensitivity to the resin composition and can form a fine aperture pattern. Examples of (D) photosensitive agents include photoacid generators, photobase generators, and photopolymerization initiators.

[0073] (D) When a photoacid generator is used as the photosensitive agent, acid is generated in the light-irradiated area of ​​the resin composition, increasing the solubility of the light-irradiated area in the alkaline developer, thus allowing a positive-type pattern in which the light-irradiated area dissolves. (D) When a photobase generator is used as the photosensitive agent, a base is generated in the light-irradiated area of ​​the resin composition, decreasing the solubility of the light-irradiated area in the alkaline developer, thus allowing a negative-type pattern in which the light-irradiated area becomes insoluble. (D) When a photopolymerization initiator is used as the photosensitive agent, radicals are generated in the light-irradiated area of ​​the resin composition, radical polymerization proceeds, and the resin becomes insoluble in the alkaline developer, thereby forming a negative-type pattern. In addition, UV curing during exposure is accelerated, improving sensitivity.

[0074] Among the photosensitive agents described in (D) above, it is preferable to use a photoacid generator in order to obtain a highly sensitive and high-resolution pattern. Examples of photoacid generators include quinone diazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts. Furthermore, sensitizers and other elements may be included as needed.

[0075] The above-mentioned quinone diazide compound is preferably a compound having a phenolic hydroxyl group to which the sulfonic acid of naphthoquinone diazide is esterified. As the compound having a phenolic hydroxyl group used here, known compounds may be used, and those to which 4-naphthoquinone diazidesulfonic acid or 5-naphthoquinone diazidesulfonic acid is introduced by an ester bond are preferred, but other compounds may also be used.

[0076] In compounds having phenolic hydroxyl groups, it is preferable that 50 mol% or more of the total functional groups are substituted with quinone diazidosulfonyl groups. By using a quinone diazide compound in which 50 mol% or more are substituted, the affinity of the quinone diazide compound for alkaline aqueous solutions decreases. As a result, the solubility of the unexposed portion of the resin composition in alkaline aqueous solutions is greatly reduced. Furthermore, exposure changes the quinone diazidosulfonyl groups to indenecarboxylic acid, allowing for a high dissolution rate of the exposed portion of the resin composition in alkaline aqueous solutions. In other words, the dissolution rate ratio between the exposed and unexposed portions of the resin composition can be increased, resulting in a pattern with high resolution. By including such a quinone diazide compound, a positive-type photosensitive resin composition that is sensitive to the i-line (365 nm), h-line (405 nm), g-line (436 nm) of a typical mercury lamp, and broadband including these, can be obtained. In addition, the photosensitive agent may be contained alone or in combination of two or more types.

[0077] As the naphthoquinone diazide, either a 5-naphthoquinone diazidosulfonyl group or a 4-naphthoquinone diazidosulfonyl group is preferably used. The 5-naphthoquinone diazidosulfonyl ester compound has absorption extending to the g-line region of mercury lamps and is suitable for g-line and full-wavelength exposure. The 4-naphthoquinone diazidosulfonyl ester compound has absorption in the i-line region of mercury lamps and is suitable for i-line exposure. It is preferable to select either the 4-naphthoquinone diazidosulfonyl ester compound or the 5-naphthoquinone diazidosulfonyl ester compound depending on the exposure wavelength. Furthermore, it is also possible to obtain a naphthoquinone diazidosulfonyl ester compound containing both a 4-naphthoquinone diazidosulfonyl group and a 5-naphthoquinone diazidosulfonyl group in the same molecule. The 4-naphthoquinone diazidosulfonyl ester compound and the 5-naphthoquinone diazidosulfonyl ester compound can also be used in combination.

[0078] Quinone diazide compounds can be synthesized by known methods through an esterification reaction between a compound having a phenolic hydroxyl group and a quinone diazidesulfonic acid compound. The use of quinone diazide compounds further improves resolution, sensitivity, and residual film rate. (D) The molecular weight of the photosensitive agent is preferably 2500 or less, and more preferably 1600 or less. If the molecular weight is 2500 or less, the quinone diazide compound will decompose sufficiently during heat treatment after pattern formation, and a cured film with excellent heat resistance, mechanical properties, and adhesion can be obtained. On the other hand, it is preferably 300 or more, and more preferably 350 or more.

[0079] (D) When the photosensitive agent is a quinone diazide compound, the content of (D) photosensitive agent in the resin composition is preferably 1 to 100 parts by mass, and more preferably 3 to 80 parts by mass, per 100 parts by mass of (A) resin. Within this range, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0080] (D) As photosensitive agents, sulfonium salts, phosphonium salts, and diazonium salts are preferred because they moderately stabilize the acidic components generated by exposure. Sulfonium salts are preferred among these.

[0081] (D) When the photosensitive agent is a sulfonium salt, phosphonium salt, or diazonium salt, the content of (D) photosensitive agent in the resin composition is more preferably 0.1 parts by mass or more, even more preferably 1 part by mass or more, and particularly preferably 3 parts by mass or more, per 100 parts by mass of (A) resin. Furthermore, 100 parts by mass or less is more preferable, 80 parts by mass or less is even preferable, and 50 parts by mass or less is particularly preferable. If the content is between 0.1 parts by mass and 100 parts by mass, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.

[0082] It is preferable that the (D) photosensitive agent having a 4-naphthoquinone diazidosulfonyl group contains a compound represented by formula (4), and the (D) photosensitive agent having a 5-naphthoquinone diazidosulfonyl group contains a compound represented by formula (5).

[0083]

[0084]

[0085] Specific examples of compounds represented by formula (4) include 4CPA-15, 4CPA-20, 4CPA-80 (all trade names, manufactured by Daito Chemix Co., Ltd.), TP4-250, HA4-170 (both trade names, manufactured by Toyo Gosei Co., Ltd.).

[0086] Furthermore, specific examples of compounds represented by formula (5) include TP5-250, TP5-280, HA5-170 (all trade names, manufactured by Toyo Gosei Co., Ltd.), STP-525, STP-528 (all trade names, manufactured by Sanbo Chemical Research Institute Co., Ltd.).

[0087] (D) When a photobase generator is used as the photosensitive agent, specific examples include amide compounds and ammonium salts. Examples of amide compounds include 2-nitrophenylmethyl-4-methacryloyloxypiperidine-1-carboxylate, 9-anthrylmethyl-N,N-dimethylcarbamate, 1-(anthraquinone-2yl)ethylimidazole carboxylate, and (E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine. Examples of ammonium salts include 1,2-diisopropyl-3-(bisdimethylamino)methylene)guanidium 2-(3-benzoylphenyl)propionate, (Z)-{[bis(dimethylamino)methylidene]amino}-N-cyclohexylamino)methaniminium tetrakis(3-fluorophenyl) borate, and 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidium n-butyltriphenyl borate.

[0088] (D) When a photobase generator is used as the photosensitive agent, the content of (D) photosensitive agent in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of (A) resin. When the content is within the above range, the sensitivity during exposure can be improved. On the other hand, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. When the content is within the above range, the resolution after development can be improved.

[0089] On the other hand, a photopolymerization initiator is preferred as the (D) photosensitive agent that imparts negative photosensitivity to the resin composition. Specific examples of photopolymerization initiators include, but are not limited to, benzyl ketal-based photopolymerization initiators, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, benzophenone-based photopolymerization initiators, acetophenone-based photopolymerization initiators, aromatic ketoester-based photopolymerization initiators or benzoic acid ester-based photopolymerization initiators, and titanocene-based photopolymerization initiators. From the viewpoint of improving sensitivity during exposure, α-hydroxyketone-based photopolymerization initiators, α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, oxime ester-based photopolymerization initiators, acridine-based photopolymerization initiators, or benzophenone-based photopolymerization initiators are more preferred, and α-aminoketone-based photopolymerization initiators, acylphosphine oxide-based photopolymerization initiators, and oxime ester-based photopolymerization initiators are even more preferred.

[0090] (D) When a photopolymerization initiator is used as the photosensitive agent, the content of (D) photosensitive agent in the resin composition is preferably 0.1 parts by mass or more, more preferably 0.5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more, per 100 parts by mass of (A) resin. When the content is within the above range, the sensitivity during exposure can be improved. On the other hand, the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less. When the content is within the above range, the resolution after development can be improved.

[0091] <Radical Polymerizable Compounds> (D) When a photopolymerization initiator is used as the photosensitive agent, it is preferable that the resin composition further contains a radical polymerizable compound. A radical polymerizable compound is a compound that has multiple ethylenically unsaturated double bond groups in its molecule.

[0092] When a photopolymerization initiator is included, the inclusion of a radical polymerizable compound allows radical polymerization of the radical polymerizable compound to proceed due to radicals generated from the photopolymerization initiator during exposure. This causes the exposed areas of the resin composition film to become insoluble in alkaline developer, thereby forming a negative-type pattern.

[0093] The inclusion of radical polymerizable compounds in the resin composition accelerates UV curing during exposure, thereby improving sensitivity during exposure. In addition, the crosslinking density after thermal curing is improved, which enhances the hardness of the cured film obtained by curing the resin composition.

[0094] As radical polymerizable compounds, compounds having methacrylic groups and / or acrylic groups (hereinafter, these may be collectively abbreviated as (meth)acrylic groups; the same abbreviation may also be used in compound names) that readily undergo radical polymerization are preferred. From the viewpoint of improving sensitivity during exposure and hardness of the cured film, compounds having two or more (meth)acrylic groups in the molecule are more preferred. The double bond equivalent of the radical polymerizable compound is preferably 80 to 400 g / mol from the viewpoint of improving sensitivity during exposure and hardness of the cured film.

[0095] Examples of radical polymerizable compounds include diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, trimethylolpropane di(meth)acrylate, trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane di(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tri(meth)acrylate, ditrimethylol Propanetetra(meth)acrylate, 1,3-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, dimethylol-tricyclodecane di(meth)acrylate, ethoxylated glycerin tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra (meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, tetrapentaerythritol nona(meth)acrylate, tetrapentaerythritol deca(meth)acrylate, pentapentaerythritol undeca(meth)acrylate Relate, pentapentaerythritol dodeca(meth)acrylate, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-(3-(meth)acryloxy-2-hydroxypropoxy)phenyl]propane, 1,3,5-tris((meth)acryloxyethyl)isocyanuric acid, 1,3-bis((meth)acryloxyethyl)isocyanuric acid, 9,9-bis[4-(2-(meth)acryloxyethoxy)phenyl]fluorene, 9,9-bis[4-(3-(meth)acryloxypropoxy)phenyl]fluorene or 9,Examples include 9-bis(4-(meth)acryloxyphenyl)fluorene or its acid-modified, ethylene oxide-modified, or propylene oxide-modified derivatives. From the viewpoint of improving sensitivity during exposure and improving the hardness of the cured film, trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, tripentaerythritol hepta(meth)acrylate, tripentaerythritol octa(meth)acrylate, and 2,2-bis[4-(3-(meth)acryloxy-2-hydro [Xypropoxy)phenyl]propane, 1,3,5-tris((meth)acryloxyethyl)isocyanuric acid, 1,3-bis((meth)acryloxyethyl)isocyanuric acid, 9,9-bis[4-(2-(meth)acryloxyethoxy)phenyl]fluorene, 9,9-bis[4-(3-(meth)acryloxypropoxy)phenyl]fluorene, or 9,9-bis(4-(meth)acryloxyphenyl)fluorene or their acid-modified, ethylene oxide-modified, or propylene oxide-modified derivatives are preferred, and from the viewpoint of improving resolution after development, their acid-modified or ethylene oxide-modified derivatives are more preferred. Furthermore, from the viewpoint of improving resolution after development, compounds obtained by reacting a compound obtained by a ring-opening addition reaction between a compound having two or more glycidoxy groups in the molecule and an unsaturated carboxylic acid having an ethylenically unsaturated double bond group with a polybasic acid carboxylic acid or polybasic carboxylic acid anhydride are also preferred.

[0096] The content of the radical polymerizable compound is preferably 15 parts by mass or more, more preferably 20 parts by mass or more, even more preferably 25 parts by mass or more, and particularly preferably 30 parts by mass or more, per 100 parts by mass of resin (A). When the content is within the above range, the sensitivity during exposure can be improved. On the other hand, the content is preferably 65 parts by mass or less, more preferably 60 parts by mass or less, even more preferably 55 parts by mass or less, and particularly preferably 50 parts by mass or less. When the content is within the above range, the heat resistance of the cured film can be improved.

[0097] <(E) Organic Solvent> The resin composition of the present invention preferably contains (E) an organic solvent (hereinafter sometimes referred to as (E) organic solvent) having a vapor pressure of 6.0 kPa or more and less than 25.0 kPa at 20°C. The inclusion of (E) organic solvent improves the in-plane uniformity of the aperture pattern dimensions after exposure and development. This is thought to be because the solvent in the film dries more uniformly due to the azeotropic effect of the solvent during the heat drying process after coating the resin on the substrate.

[0098] In the present invention, (E) organic solvents specifically include alcohols such as methanol (vapor pressure 13.2 kPa) and ethanol (vapor pressure 6.4 kPa), and ketones such as acetone (vapor pressure 24.5 kPa) and methyl ethyl ketone (vapor pressure 10.4 kPa). Two or more of these solvents may be included.

[0099] When the mass of the above (E) organic solvent is denoted as EW, it is preferable that EW relative to the mass of the resin composition be 0.00003 or more and 0.00010 or less, more preferably 0.00003 or more and 0.00008 or less, and even more preferably 0.00003 or more and 0.00007 or less. Within this range, the in-plane uniformity of the pattern dimensions can be improved during pattern processing. If EW is less than 0.00003, the content is too low, and the in-plane uniformity of the opening dimensions decreases. Also, if EW exceeds 0.00010, drying progresses too much during spin coating, which reduces the coatability and decreases the in-plane uniformity of the film thickness.

[0100] <Thermal Crosslinking Agent> The resin composition of the present invention may further contain a thermal crosslinking agent. A thermal crosslinking agent refers to a compound having at least two heat-reactive functional groups in its molecule, such as an alkoxymethyl group, a methylol group, an epoxy group, or an oxetanyl group. By including a thermal crosslinking agent, the resin (A) or other additive components can be crosslinked, improving the heat resistance, chemical resistance, and hardness of the film after heat curing.

[0101] Preferred examples of compounds having at least two alkoxymethyl groups or methylol groups include DML-PC, DML-PEP, DML-OC, DML-OEP, DML-34X, DML-PTBP, DML-PCHP, DML-OCHP, DML-PFP, DML-PSBP, DML-POP, DML-MBOC, DML-MBPC, DML-MTrisPC, DML-BisOC-Z, DML-BisOCHP-Z, DML-BPC, DML-BisOC-P, DDOM-PC, DDOM-PTBP, DDOM-MBPC, TriML-P, TriML-35XL, TML-HQ, TML-BP, and TML-pp. Examples include BPF, TML-BPE, TML-BPA, TML-BPAF, TML-BPAP, TMOM-BP, TMOM-BPE, TMOM-BPA, TMOM-BPAF, TMOM-BPAP, HML-TPPHBA, HML-TPHAP, HMOM-TPPHBA, HMOMTPHAP (all product names, manufactured by Honshu Chemical Industry Co., Ltd.), "NIKALAC" (registered trademark) MX-290, "NIKALAC" MX-280, "NIKALAC" MX-270, "NIKALAC" MX-279, "NIKALAC" MW-100LM, and "NIKALAC" MX-750LM (all product names, manufactured by Sanwa Chemical Co., Ltd.).

[0102] Preferred examples of compounds having at least two of the above epoxy groups include "Epolite" (registered trademark) 40E, "Epolite" 100E, "Epolite" 200E, "Epolite" 400E, "Epolite" 70P, "Epolite" 200P, "Epolite" 400P, "Epolite" 1500NP, and "Epolite" 80MF. , "Epolite" 4000, "Epolite" 3002 (all product names, manufactured by Kyoeisha Chemical Co., Ltd.), "Denacol" (registered trademark) EX-212L, "Denacol" EX-214L, "Denacol" EX-216L, "Denacol" EX-850L (all manufactured by Nagase ChemteX Corporation), GAN, GOT (all product names, manufactured by Nippon Kayaku Co., Ltd.), "Epicort" (registered trademark) 828, "Epicort" 1002, "Epicort" 1750, "Epicort" 1007, YX8100-BH30, E1256, E4250, E4275 (all product names, manufactured by Japan Epoxy Resin Co., Ltd.), "Epiclon" (registered trademark) Examples include EXA-9583, HP4032 (product names, manufactured by DIC Corporation), VG3101 (product name, manufactured by Mitsui Chemicals, Inc.), "Tepic" (registered trademark) S, "Tepic" G, "Tepic" P (product names, manufactured by Nissan Chemical Industries, Ltd.), "Denacol" EX-321L (product name, manufactured by Nagase ChemteX Corporation), NC6000 (product name, manufactured by Nippon Kayaku Co., Ltd.), "Epotote" (registered trademark) YH-434L (product name, manufactured by Toto Kasei Co., Ltd.), EPPN502H, NC3000 (product name, manufactured by Nippon Kayaku Co., Ltd.), "Epiclon" (registered trademark) N695, HP7200 (product names, manufactured by DIC Corporation).

[0103] Preferred examples of compounds having at least two oxetanyl groups include etanacol EHO, etanacol OXBP, etanacol OXTP, etanacol OXMA (all trade names, manufactured by Ube Industries, Ltd.), and oxetanized phenol novolacs.

[0104] The thermal crosslinking agent may be contained in combination of two or more types. The content of the thermal crosslinking agent is preferably 1 part by mass or more and 30 parts by mass or less per 100 parts by mass of the total amount of the resin composition excluding the solvent. If the content of the thermal crosslinking agent is 1 part by mass or more, the chemical resistance and hardness of the cured film can be further improved. If the content of the thermal crosslinking agent is 30 parts by mass or less, it is possible to suppress appearance defects such as wrinkles on the film surface due to film shrinkage caused by the crosslinking reaction.

[0105] <Compounds having phenolic hydroxyl groups> For the purpose of compensating for the alkali developability of the resin composition of the present invention, compounds having phenolic hydroxyl groups may be contained. Examples of compounds having phenolic hydroxyl groups include Bis-Z, BisOC-Z, BisOPP-Z, BisP-CP, Bis26X-Z, BisOTBP-Z, BisOCHP-Z, BisOCR-CP, BisP-MZ, BisP-EZ, Bis26X-CP, BisP-PZ, BisP-IPZ, BisCRIPZ, BisOCP-IPZ, BisOIPP-CP, Bis26X-IPZ, Bis OTBP-CP, TekP-4HBPA (tetrakis P-DO-BPA), TrisPHAP, TrisP-PA, TrisP-PHBA, TrisP-SA, TrisOCR-PA, BisOFP-Z, BisRS-2P, BisPG-26X, BisRS-3P, BisOC-OCHP, BisPC-OCHP, Bis25X-OCHP, Bis26X-OCHP, BisOCHP-OC, Bis236T -OCHP, methylene tris-FR-CR, BisRS-26X, BisRS-OCHP, (product name, Honshu Chemical Industry Co., Ltd.), BIR-OC, BIP-PCBIR-PC, BIR-PTBP, BI R-PCHP, BIP-BIOC-F, 4PC, BIR-BIPC-F, TEP-BIP-A (trade names, Asahi Yokuzai Kogyo Co., Ltd.), 1,4-dihydroxynaphthalene, 1,5-dihydroxynaphthalene Examples include 1,6-dihydroxynaphthalene, 1,7-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, 2,4-dihydroxyquinoline, 2,6-dihydroxyquinoline, 2,3-dihydroxyquinoxaline, anthracene-1,2,10-triol, anthracene-1,8,9-triol, and 8-quinolinol. By containing these compounds having phenolic hydroxyl groups, the resulting resin composition is almost insoluble in alkaline developer before exposure, but readily dissolves in alkaline developer after exposure, resulting in less film loss during development and easier development in a short time. Therefore, sensitivity is easily improved.

[0106] The content of such compounds having phenolic hydroxyl groups is preferably 1 part by mass or more and 20 parts by mass or less per 100 parts by mass of resin (A). By keeping it within the above range, it is possible to improve the alkali developability of the resin composition while maintaining high heat resistance.

[0107] <Antioxidant> The resin composition of the present invention may further contain an antioxidant. By including an antioxidant, (A) oxidative degradation of the aliphatic groups and phenolic hydroxyl groups of the resin is suppressed. Furthermore, by providing rust prevention to metal materials, it suppresses metal oxidation caused by external moisture, photosensitive agents, etc., and the resulting delamination between the cured film and the metal material. In other words, it is possible to suppress the deterioration of device characteristics after reliability testing of the device. Specific examples include, but are not limited to, the following.

[0108]

[0109]

[0110]

[0111]

[0112]

[0113] The antioxidant content is preferably 0.1 to 10 parts by mass, and more preferably 0.2 to 5 parts by mass, per 100 parts by mass of resin (A). A content of 0.1 parts by mass or more improves adhesion to metal materials and suppresses peeling. A content of 10 parts by mass or less makes it possible to maintain the sensitivity of the resin composition.

[0114] <Adhesion-improving agent> The resin composition of the present invention may further contain an adhesion-improving agent. Examples of adhesion-improving agents include silane coupling agents such as vinyltrimethoxysilane, vinyltriethoxysilane, epoxycyclohexylethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, and N-phenyl-3-aminopropyltrimethoxysilane, titanium chelating agents, aluminum chelating agents, and compounds obtained by reacting aromatic amine compounds with alkoxy group-containing silicon compounds. Two or more of these may be included. By including these adhesion-improving agents, when developing the pre-baked film described later, silicon wafers, indium tin oxide (ITO), SiO ２ This improves the development adhesion to substrates such as silicon nitride. Furthermore, it enhances resistance to oxygen plasma and UV ozone treatments used in cleaning.

[0115] The adhesion improver content in the resin composition of the present invention is preferably 0.1 to 10 parts by mass per 100 parts by mass of resin (A). By setting the content within this range, it is possible to provide a resin composition that exhibits high adhesion after development and excellent resistance to oxygen plasma and UV ozone treatment.

[0116] <Adhesion modifier> The resin composition of the present invention may further contain an adhesion modifier. Examples of adhesion modifiers include alkoxysilane-containing aromatic amine compounds, aromatic amide compounds, or aromatic-free silane compounds. In addition, it may be a compound obtained by reacting an aromatic amine compound with an alkoxy group-containing silicon compound, for example, a compound obtained by reacting an aromatic amine compound with an alkoxysilane compound having a group that reacts with an amino group such as an epoxy group or a chloromethyl group.

[0117] Examples of the above-mentioned aromatic-free silane compounds include vinylsilane compounds such as vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, and vinyltris(β-methoxyethoxy)silane, and carbon-carbon unsaturated bond-containing silane compounds such as 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, and 3-methacryloxypropylmethyldiethoxysilane. Among these, vinyltrimethoxysilane and vinyltriethoxysilane are preferred. Two or more of these may be included. By including these compounds, the adhesion between the cured film obtained by curing the resin composition and the substrate can be improved.

[0118] The content of the adhesion improver is preferably 0.01 to 15 parts by mass per 100 parts by mass of resin (A). By setting it within this range, the adhesion between the cured film obtained by curing the resin composition and the substrate can be improved. In addition, compounds that have both adhesion improver and bonding improver functions, such as vinyltrimethoxysilane and vinyltriethoxysilane, can also be included.

[0119] <Surfactants> The resin composition of the present invention may further contain surfactants for the purpose of improving wettability with the substrate or improving the in-plane uniformity of the film thickness of the coating film, if necessary. Commercially available compounds can be used as surfactants. Specifically, examples of silicone-based surfactants include the SH series, SD series, and ST series from Toray Dow Corning Silicone, the BYK series from Bic Chemie Japan, the KP series from Shin-Etsu Silicone, the Disform series from Nippon Oil & Fats Co., Ltd., and the TSF series from Toshiba Silicone Co., Ltd. Examples of fluorine-based surfactants include the "Megafac" (registered trademark) series from Dainippon Ink & Industrial Co., Ltd., the Florard series from Sumitomo 3M Co., Ltd., the "Surflon" (registered trademark) series and the "Asahiguard" (registered trademark) series from Asahi Glass Co., Ltd., the EF series from Shin Akita Chemical Co., Ltd., and the Polyfox series from Omnova Solutions Co., Ltd. Examples of surfactants obtained from acrylic and / or methacrylic polymers include the Polyflow series from Kyoeisha Chemical Co., Ltd. and the "Disparon" (registered trademark) series from Kusumoto Chemical Co., Ltd., but are not limited to these.

[0120] The surfactant content is preferably 0.001 parts by mass or more and 1 part by mass or less per 100 parts by mass of resin (A). By keeping it within the above range, it is possible to improve the wettability between the resin composition and the substrate, as well as the in-plane uniformity of the film thickness of the coating, without causing defects such as bubbles or pinholes.

[0121] <Thermal Acid Generator> The resin composition of the present invention may contain a thermal acid generator. The thermal acid generator generates acid upon heating, promoting the crosslinking reaction of the thermal crosslinking agent. In addition, if the resin (A) has an unclosed imide ring structure or an oxazole ring structure, it promotes the cyclization of these structures, thereby further improving the mechanical properties of the cured film.

[0122] The thermal decomposition start temperature of the thermal acid generator used in the present invention is preferably 50°C to 270°C, and more preferably 250°C or lower. Furthermore, it is preferable to select a thermal acid generator that does not generate acid during drying (pre-baking: approximately 70 to 140°C) after coating the resin composition of the present invention onto the substrate, but generates acid during the final heating (curing: approximately 100 to 400°C) after patterning by exposure and development, as this suppresses a decrease in sensitivity during development.

[0123] The acid generated from the thermal acid generator used in the present invention is preferably a strong acid, such as aryl sulfonic acids like p-toluenesulfonic acid and benzenesulfonic acid, alkyl sulfonic acids like methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, and butanesulfonic acid, and haloalkylsulfonic acids like trifluoromethylsulfonic acid. These are used as salts such as onium salts, or as covalent compounds such as imidosulfonates. Two or more of these may be included.

[0124] The amount of the thermal acid generator is preferably 0.01 parts by mass or more, and more preferably 0.1 parts by mass or more, per 100 parts by mass of the total amount of the resin composition excluding the solvent. By including 0.01 parts by mass or more of the thermal acid generator, the crosslinking reaction and the cyclization of the unclosed ring structure of the resin are promoted, thereby further improving the mechanical properties and chemical resistance of the cured film. Furthermore, from the viewpoint of storage stability, it is preferably 5 parts by mass or less, and more preferably 2 parts by mass or less.

[0125] Next, a method for producing the resin composition of the present invention will be described.

[0126] For example, a resin composition can be obtained by mixing and dissolving (A) resin, (B1) organic solvent, (B2) organic solvent, (C) component, and optionally (D) photosensitive agent, (E) organic solvent, compound having a phenolic hydroxyl group, radical polymerizable compound, adhesion improver, bonding improver, surfactant, etc. Dissolution methods include stirring and dissolving in a glass flask or stainless steel container using a mechanical stirrer, dissolving with ultrasound, or stirring and dissolving in a planetary stirring and defoaming device. When heating, the heating temperature should preferably be set within a range that does not impair the performance of the resin composition, and is usually room temperature to 80°C. The order of dissolution of each component is not particularly limited; for example, compounds with lower solubility can be dissolved sequentially. When stirring, the rotation speed should preferably be set within a range that does not impair the performance of the resin composition, and is usually 200 rpm to 2000 rpm. Even when stirring, heating may be performed as needed, and is usually room temperature to 80°C. Furthermore, for components that tend to generate bubbles during stirring and dissolution, such as surfactants and some adhesion improvers, adding them last after dissolving the other components can prevent poor dissolution of other components due to bubble formation.

[0127] The viscosity of the resin composition is preferably 200 to 5,000 mPa·s. By adjusting the solid content concentration so that the viscosity is 200 mPa·s or higher, it becomes easy to obtain the desired film thickness. On the other hand, if the viscosity is 5,000 mPa·s or lower, it becomes easy to obtain a coating film with high uniformity. A resin composition having such viscosity can be easily obtained, for example, by setting the solid content concentration to 5 to 60% by mass.

[0128] The obtained resin composition is preferably filtered using a filtration filter to remove dirt and particles. The pore size of the filter may be, for example, 0.5 μm, 0.2 μm, 0.1 μm, 0.05 μm, or 0.02 μm, but is not limited to these. The material of the filtration filter may be polypropylene (PP), polyethylene (PE), nylon (NY), or polytetrafluoroethylene (PTFE), but polyethylene or nylon is preferred.

[0129] <Cured Film> The cured film of the present invention is a film obtained by curing the resin composition of the present invention. A method for producing the cured film obtained by curing the resin composition of the present invention will be described below.

[0130] The method for manufacturing a cured film includes the steps of: applying the above resin composition onto a substrate and drying it to form a pre-baked film;, if the pre-baked film is photosensitive, an exposure step of exposing the pre-baked film through a mask; a development step of developing the exposed pre-baked film; and a heat treatment step of heat treating the developed pre-baked film. The pre-baked film is defined as a film obtained by applying the resin composition to the surface of a substrate and drying it.

[0131] First, the resin composition of the present invention is applied to a substrate to obtain a coating film. Examples of substrates include, but are not limited to, silicon wafers, metal sputtered silicon wafers, ceramics, gallium arsenide, organic circuit boards, inorganic circuit boards, composite substrates of silicon wafers and sealing resins such as epoxy resin, sealing resin substrates, and substrates on which circuit components are arranged. Examples of organic circuit boards include glass substrate copper-clad laminates such as glass cloth / epoxy copper-clad laminates, composite copper-clad laminates such as glass nonwoven fabric / epoxy copper-clad laminates, temporary-laid carrier substrates, heat-resistant / thermoplastic substrates such as polyetherimide resin substrates, polyetherketone resin substrates, and polysulfone resin substrates, and flexible substrates such as polyester copper-clad film substrates and polyimide copper-clad film substrates. Examples of inorganic circuit boards include glass substrates, alumina substrates, aluminum nitride substrates, silicon carbide substrates, and other ceramic substrates, as well as metal substrates such as aluminum-based substrates and iron-based substrates. Examples of circuit components include conductors containing metals such as silver, gold, and copper; resistors containing inorganic oxides; low dielectrics containing glass-based materials and / or resins; high dielectrics containing resins or high dielectric constant inorganic particles; and insulators containing glass-based materials.

[0132] Coating methods include spin coating, slit coating, dip coating, spray coating, and printing. Spin coating is particularly preferred. In spin coating, for example, the resin is applied to a substrate such as a silicon wafer, ceramic substrate, or aluminum substrate using a spin coater, and then dried at 50°C to 140°C using an oven or hot plate to remove the solvent. By applying the resin composition of the present invention by spin coating, good edge cutting properties and uniform film thickness can be achieved. Furthermore, it is possible to apply the resin with a smaller amount of coating than with other methods.

[0133] To improve the adhesion between a substrate such as a silicon wafer and a resin composition, the substrate can be pre-treated with the aforementioned silane coupling agent. For example, a solution prepared by dissolving 0.5 to 20% by weight of the silane coupling agent in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, or diethyl adipate is used for surface treatment by spin coating, immersion, spray coating, or steam treatment. In some cases, heat treatment at 50°C to 300°C is then performed to promote the reaction between the substrate and the silane coupling agent.

[0134] Next, the substrate is dried to obtain a pre-baked film. Drying is preferably carried out using an oven, hot plate, infrared, etc., at a temperature of 50°C to 150°C for 1 minute to several hours.

[0135] In the exposure process, a chemical beam is irradiated onto a photosensitive pre-baked film through a mask having a desired pattern. Chemical beams used for exposure include ultraviolet light, visible light, electron beams, and X-rays, but in this invention, it is preferable to use g-rays (436 nm), h-rays (405 nm), or i-rays (365 nm), which are common exposure wavelengths.

[0136] Next, the exposed pre-baked film is developed. Preferred developers include aqueous solutions of alkaline compounds such as tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine. In some cases, one or more polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, γ-butyrolactone, and dimethylacrylamide may be added to these alkaline aqueous solutions; alcohols such as methanol, ethanol, and isopropanol; esters such as ethyl lactate and propylene glycol monomethyl ether acetate; and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone, and methyl isobutyl ketone. Development can be carried out by spraying the above-mentioned developer onto the film surface, immersing it in the developer, applying ultrasonic waves while immersed, or spraying the developer while rotating the substrate. After development, rinsing with water is preferable. Here, alcohols such as ethanol and isopropyl alcohol, or esters such as ethyl lactate and propylene glycol monomethyl ether acetate may be added to the water for rinsing.

[0137] A cured film is obtained by curing the developed pre-baked film by heat treatment to promote a thermal crosslinking reaction. Crosslinking can improve heat resistance and chemical resistance. The heat treatment method can be selected from a method of gradually increasing the temperature or a method of continuously increasing the temperature within a certain temperature range for 5 minutes to 5 hours. An example of the former is a method of heat treatment at 130°C and 200°C for 30 minutes each. An example of the latter is a method of linearly increasing the temperature from room temperature to 400°C over 2 hours. In this invention, the heat treatment conditions are preferably in a nitrogen atmosphere, and the maximum curing temperature is preferably 200°C to 400°C, more preferably 250°C to 390°C, and most preferably 320°C to 380°C.

[0138] Furthermore, the method for manufacturing the cured film of the present invention preferably includes a step of applying a dry etching treatment to the cured film obtained by heat treatment. By applying the dry etching step, the minute surface roughness on the cured film can be increased, and the adhesion to the barrier metal due to the anchoring effect can be improved.

[0139] The dry etching process in the present invention includes plasma etching and reactive ion etching. Reactive ion etching is preferred because it enables highly anisotropic etching of the cured film, resulting in a high anchoring effect. The reactive gas used in dry etching is not particularly limited, and reactive gases such as tetrafluoromethane, trifluoromethane, oxygen, nitrogen, tetrachloromethane, carbon monoxide, and carbon dioxide can be used individually or in mixtures of two or more. Inert gases such as helium and argon may also be mixed. Among these, the reactive gas is preferably oxygen because it can improve the surface energy of the cured film and improve adhesion with the barrier metal. Furthermore, the plasma output during plasma etching is preferably 200 W to 1500 W, and the pressure is preferably 5 to 80 Pa.

[0140] In the dry etching process, the amount of film reduction of the cured film etched is preferably 0.1 to 0.5 μm.

[0141] <Semiconductor Device> The present invention relates to a semiconductor device having a cured film. One embodiment relates to a semiconductor device having a cured film obtained by curing the resin composition of the above embodiment.

[0142] The components of a semiconductor device generally include semiconductor elements and encapsulating materials (encapsulating layers). Semiconductor elements are typically made of inorganic materials such as semiconductor chips (Si, SiC, GaN), Cu, Ni plating, Ag plating, Au plating, Au / Pd / Ni plating, solder, sintered silver, sintered copper, Al wire, Au wire, and ceramic substrates (alumina, alumina zirconia, aluminum nitride, silicon nitride). The encapsulating layer is typically made of organic materials such as resin. Hereinafter, encapsulating layers made of resin will be referred to as resin encapsulating layers.

[0143] In a semiconductor device, the adhesion between components can be easily improved by forming a cured film obtained by curing the resin composition of the above embodiment as a primer layer between each component. More specifically, for example, by forming a cured film obtained by curing the resin composition between the resin encapsulation layer and the substrate, or between the resin encapsulation layer and the semiconductor element, the adhesion between each component can be ensured, and delamination during cycle testing can be prevented. From this viewpoint, in one embodiment, the semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a primer layer provided on at least the semiconductor element mounting surface of the substrate, and a resin encapsulation layer provided on the primer layer, wherein the primer layer is preferably composed of a cured film obtained by curing the resin composition of the above embodiment. The substrate may be a lead frame composed of a die pad on which the semiconductor element is mounted and leads, and the electrode pad of the semiconductor element and the leads of the lead frame are electrically connected via wires.

[0144] A preferred example of the semiconductor device of the present invention is a power semiconductor device that uses a silicon carbide (SiC) substrate or a gallium nitride (GaN) substrate, where a thick insulating film is preferred. When a power semiconductor device is constructed using the above resin composition, the decrease in adhesion between each component during heat cycle testing can be easily suppressed.

[0145] Hereinafter, a typical structure of the semiconductor device according to the above embodiment will be described in detail with reference to Figure 1. Figure 1 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device shown in Figure 1 has a die pad 1a, a semiconductor element 2, a primer layer 3, a lead 1b, a wire 4, and a resin encapsulation layer 5, and the primer layer 3 is formed from a cured film obtained by curing the resin composition of the above embodiment. As shown in Figure 1, by providing the primer layer 3 formed from a cured film obtained by curing the resin composition on the semiconductor element mounting surface of the substrate (the lead 1b and the surface of the die pad 1a on which the semiconductor element 2 is mounted) that is in contact with the resin encapsulation layer 5, the adhesion between each component can be easily improved.

[0146] In one embodiment, the method for manufacturing a semiconductor device includes at least the steps of applying the resin composition of the above embodiment to the surface of a substrate on which a semiconductor element is mounted and drying it to form a primer layer, and forming a resin sealing layer on the primer layer.

[0147] In the above embodiment, the primer layer is formed using the resin composition of the above embodiment. From the viewpoint of workability, it is preferable to use a resin composition containing resin (A) as the resin component. The primer layer can be obtained by applying the resin composition to a predetermined location and heat-curing the coating film. By imparting photosensitivity as described herein, it becomes possible to form a pattern in the primer layer. The method for forming the pattern is as described above.

[0148] The material of the lead frame, which consists of a die pad on which a semiconductor element is mounted and leads, is not particularly limited and can be selected from materials well known in the art. From the viewpoint of application to power semiconductor devices, the die pad material is preferably at least one selected from the group consisting of Ni or Cu. Furthermore, one selected from the group consisting of Ni or Cu may have Ag plating on its surface. The lead material of the lead frame is preferably selected from the group consisting of Ni or Cu.

[0149] The material of the semiconductor device is not particularly limited and may be, for example, a silicon wafer, a silicon carbide wafer, etc.

[0150] The resin encapsulation layer may be formed using an encapsulant well known in the art. For example, the resin encapsulant may be a liquid or solid epoxy resin composition. The resin encapsulation layer can be formed, for example, by transfer molding using the resin encapsulant.

[0151] Next, an example of applying the cured film of the present invention to a semiconductor device having bumps will be described with reference to the drawings. Figure 2 is an enlarged cross-sectional view of the pad portion of a semiconductor device having bumps. As shown in Figure 2, input / output aluminum (hereinafter referred to as Al) pads 7 and a passivation film 8 are formed on a silicon wafer 6, and via holes are formed in the passivation film 8. Furthermore, an insulating film 9 made of a cured film obtained by curing the resin composition of the present invention is formed on this, and a metal film 10 is formed so as to be electrically connected to the Al pad 7. Cr, Ti, etc. are preferably used as the material for the metal film 10. Metal wiring 11 is provided on the metal film 10. Ag, Cu, etc. are preferably used as the material for the metal wiring 11. It is preferable to form the metal wiring 11 on the metal film 10 using a plating method. An insulating film 12 made of a cured film obtained by curing the resin composition of the present invention is formed on the insulating film 9 and the metal film 10. The insulating film 12 needs to have openings in the pad portions where scribe lines 14 and solder bumps 15 are installed by a photolithography process. After forming a barrier metal 13 on the pad portion, solder bumps 15 are formed. When a flexible component is introduced into the resin composition of the present invention, the warping of the wafer is small, allowing for high-precision exposure and wafer transport. Furthermore, since polyimide resin and polybenzoxazole resin have excellent mechanical properties, stress from the encapsulating resin can be relieved during mounting, preventing damage to the low-k layer and providing a highly reliable semiconductor device.

[0152] Next, a method for manufacturing a semiconductor device having bumps according to the above embodiment will be described with reference to Figure 3. In the process shown in Figure 3a, the resin composition of the present invention is applied to a silicon wafer 1 on which Al pads 7 and passivation films 8 are formed, and an insulating film 9 is formed by a photolithography process after pattern formation and then curing. Then, in the process shown in Figure 3b, a metal film 10 is formed by sputtering. Furthermore, as shown in Figure 3c, metal wiring 11 is deposited on the metal film 10 by plating. Next, as shown in Figure 3d', the resin composition of the present invention is applied thereon, and an insulating film 12 with the shape shown in Figure 3d is formed by a photolithography process after pattern formation and then curing. At this time, openings are formed in the insulating film 12 at the scribe lines 14. Further wiring (so-called rewiring) may be formed on the insulating film 12. By repeating the above process, a multilayer wiring structure can be formed in which two or more layers of rewiring are separated by an insulating film made of a cured film of the resin composition of the present invention. This insulating film that separates the rewiring is called an interlayer insulating film. In this process, the formed insulating film comes into contact with various chemicals multiple times. However, because the insulating film made from the cured resin composition of the present invention has excellent adhesion and chemical resistance, it can form a good multilayer wiring structure. There is no upper limit to the number of layers in the multilayer wiring structure, but structures with 10 layers or less are commonly used.

[0153] Next, as shown in Figures 3e and 3f, the barrier metal 13 and solder bumps 15 are formed. Then, the wafer is diced along the scribe lines 14 to separate it into chips. If the insulating film 12 does not have openings formed along the scribe lines 14, or if residue remains, cracks may occur during dicing, affecting the reliability of the chips. For this reason, being able to provide pattern processing that is excellent for thick film processing is highly desirable for obtaining high reliability of semiconductor devices.

[0154] In addition to the above, in semiconductor packages in which a semiconductor chip is embedded in a recess formed in a glass epoxy resin substrate, wiring is installed so as to straddle the boundary line between the main surface of the semiconductor chip and the main surface of the printed circuit board. In this embodiment as well, an interlayer insulating film is formed on a substrate composed of two or more materials, and wiring (rewiring) is formed on the interlayer insulating film. The cured film obtained by curing the resin composition of the present invention has high adhesion to semiconductor chips with metal wiring, as well as high adhesion to encapsulating resins such as epoxy resin, and is therefore suitable for use as an interlayer insulating film provided on a substrate composed of two or more materials.

[0155] <Electronic Components> The electronic component of the present invention is an electronic component having a cured film. One embodiment relates to an electronic component having a cured film obtained by curing the resin composition of the above embodiment.

[0156] A preferred example of the electronic component of the present invention is the coil component of an inductor device. The structure of the coil component of an inductor device, which is an electronic component, will be described in detail below with reference to Figure 4. Figure 4 is a cross-sectional view of the coil component of an inductor device. As shown in Figure 4, an insulating film 17 is formed over the entire surface of a substrate 16, and an insulating film 18 with openings is formed thereon. Ferrite or the like can be used as the substrate 16. The cured film of the present invention is used for either the insulating film 17 or the insulating film 18, or for both. A metal film 19 made of Cr, Ti, etc. is formed in the openings of the insulating film 18, and metal wiring 20 made of Ag, Cu, etc. is formed thereon using a plating method. The metal wiring 20 is formed in a spiral shape. By repeating the above process multiple times and stacking the insulating film 17, insulating film 18, metal film 19 and metal wiring 20, it is possible to give it the function of a coil. The metal wiring 20 provided in the uppermost layer is connected to an electrode 22 by metal wiring 21 made of Ag, Cu, etc., and sealed with a sealing resin 23.

[0157] <Interlayer insulating film for redistribution> In the semiconductor device of the present invention, the above-mentioned cured film can be suitably used as an interlayer insulating film between redistributions on a sealing resin substrate on which semiconductor chips are arranged. The cured film of the present invention can also be suitably used in fan-out wafer-level packages (fan-out WLP) or fan-out panel-level packages (fan-out PLP).

[0158] Figure 5 is a cross-sectional view of the manufacturing process of an example of a semiconductor device having a cured film of the present invention. More specifically, it is an enlarged cross-sectional view of a semiconductor package called a Chip-First Fan-Out WLP or Chip-First Fan-Out PLP. A silicon wafer on which Al pads 25 and a passivation film 26 are formed is diced and cut into semiconductor chips 24, which are then sealed with a sealing resin 33. The resin composition of the present invention is applied across the sealing resin 33 and the semiconductor chips 24, and an insulating film 27 is formed by creating openings by pattern formation using a photolithography process and then curing. On top of the insulating film 27, a metal film 28 made of Cr, Ti, etc. and metal wiring 29 made of Ag, Cu, etc. are further formed. The metal film 28 and metal wiring 29 are electrically connected to the Al pads 25 provided on the semiconductor chips 24 at openings provided in the insulating film 27. An insulating film 30 is further formed on top of that. The resin composition of the present invention is preferably used for forming the insulating film 30 as well. Barrier metal 31 and solder bumps 32 are formed at openings provided in the insulating film 30. The barrier metal 31 and the solder bump 32 are electrically connected to the metal wiring 29.

[0159] Chip-fast fan-out WLP or Chip-fast fan-out PLP is a semiconductor package that secures the required number of terminals by providing an expanded portion around the semiconductor chip using an encapsulating resin such as epoxy resin, rewiring from the electrodes on the semiconductor chip to the expanded portion, and mounting solder balls on the expanded portion. In Chip-fast fan-out WLP or Chip-fast fan-out PLP, wiring is installed so as to straddle the boundary line formed by the main surface of the semiconductor chip and the main surface of the encapsulating resin. That is, an insulating film 30 is placed as an interlayer insulating film on a substrate composed of two or more materials, a semiconductor chip and an encapsulating resin, and metal wiring (rewiring) 29 is placed on the interlayer insulating film.

[0160] Furthermore, in this structure, it is preferable that the thickness of the interlayer insulating film of the redistribution layer closer to the semiconductor chip is the same as or thinner than the thickness of the interlayer insulating film of the redistribution layer further away from the semiconductor chip. In other words, it is preferable that each redistribution layer constituting the multilayer wiring structure gradually becomes finer in pitch from the farther side to the closer side to the semiconductor chip. Having such a structure allows for smooth connection between the semiconductor chip and terminals, even with highly integrated semiconductor chips. In order to manufacture such a structure, in-plane uniformity of the interlayer insulating film in each redistribution layer is important.

[0161] The present invention will be described below with reference to examples, but the present invention is not limited to these examples. The resin compositions in the examples were evaluated by the following method. For the evaluation, the resin composition (hereinafter referred to as varnish) that had been previously filtered through a 1 μm polytetrafluoroethylene filter (manufactured by Sumitomo Electric Industries, Ltd.) was used.

[0162] <Evaluation of Non-Photosensitive Resin Composition> (1) Edge Cutting Performance Evaluation A varnish was prepared under the conditions described below, and a pre-baked film was prepared by spin coating and pre-baking using an ACT-8 coating and developing apparatus (manufactured by Tokyo Electron Ltd.) on an 8-inch silicon wafer. The coating conditions were as follows: the varnish was dropped onto the substrate at 10 rpm, followed by spin coating in the following coating sequence: (i) 700 rpm for 10 seconds, (ii) X rpm for 30 seconds, and (iii) 1500 rpm for 60 seconds. Here, X rpm is an arbitrary rotation speed that results in a film thickness of 10 μm after pre-baking, as described below. Edge cutting was performed in step (iii). OK73 thinner (PGME / PGMEA = 7 / 3, manufactured by Tokyo Ohka Kogyo Co., Ltd.) was used for edge cutting, and the edge cut width was 3.0 mm. Pre-baking was performed after the spin coating process by heating on a hot plate at 120°C for 3 minutes with an exhaust pressure of 50 Pa. The size of the area where resin remained from the wafer edge in the edge-cut portion of the obtained pre-baked film was defined as edge-cut performance. The outer edge of the wafer was set to 0 mm, and the area where polyimide remained in the direction toward the wafer center was observed using an optical microscope. The less residue there was closer to the outer edge, the better the edge-cut performance. A score of A was given for having no residue in the area between 0 mm and 2.5 mm, a score of B was given for having no residue in the area between 0 mm and 2.0 mm and some residue in the area between 2.0 mm and 2.5 mm, a score of C was given for having no residue in the area between 0 mm and 1.0 mm and some residue in the area between 1.0 mm and 2.0 mm, and a score of D was given for having residue in the area between 0 mm and 1.0 mm.

[0163] (2) Evaluation of In-Plane Uniformity of Film Thickness Coating and pre-baking were performed under the conditions described in "(1) Evaluation of Edge Cutability" above to obtain a pre-baked film. The film thickness of the pre-baked film was measured using an optical interference film thickness measuring device Lambda Ace STM-602 (manufactured by Dainippon Screen Mfg. Ltd.) at a refractive index of 1.629. With the center of the 8-inch wafer set as 0 mm, measurements were taken at 13 points at 15 mm intervals horizontally from -90 mm on the left to 90 mm on the right. The difference between the minimum and maximum values ​​of the measured film thickness was defined as the in-plane uniformity of the film thickness. A value of 0 μm or more and less than 0.30 μm was evaluated as extremely good (A), 0.30 μm or more and less than 0.45 μm was evaluated as good (B), 0.45 μm or more and less than 0.60 μm was evaluated as acceptable (C), and 0.60 μm or more was evaluated as poor (D).

[0164] (3) Evaluation of coating amount Coating and pre-baking were performed under the conditions described in "(1) Evaluation of edge cutability" above to obtain a pre-baked film. The coating amount was determined using the value set by the coating and developing device ACT-8 (manufactured by Tokyo Electron Ltd.), and was the minimum amount of varnish that could coat the entire surface of the substrate when the varnish was dropped. Coating amounts of less than 3.0 g were evaluated as excellent (A), 3.0 g as good (B), 3.1 g as acceptable (C), and 3.2 g or more as poor (D). In this case, the coating amount was rounded to two decimal places.

[0165] <Evaluation of Photosensitive Resin Composition> (4) Evaluation of In-Plane Dimensional Uniformity (a) Determination of Development Conditions Coating and pre-baking were performed under the conditions described in "(1) Evaluation of Edge Cutting Properties" above, and the obtained pre-baked film was developed using an ACT-8 developing device. The development sequence was as follows: (i) Discharge of 2.38% by mass of tetramethylammonium (TMAH) aqueous solution (manufactured by Tama Chemical Industry Co., Ltd.) at 50 rpm for 10 seconds, (ii) Rinse with water at 0 rpm for Y seconds, (iii) Rinse with water at 400 rpm for 10 seconds, (v) Spin dry at 3000 rpm for 10 seconds. Here, Y seconds was set to an arbitrary time so that the film thickness after development was 9.0 μm. The film thickness of the pre-baked film was measured using the method described in "(2) Evaluation of In-Plane Film Thickness Uniformity" above, and the average value of 13 measurement points was used.

[0166] (b) Determination of exposure conditions Coating and pre-baking are performed under the conditions described in "(1) Edge cut performance evaluation" above, and the obtained pre-baked film is exposed to light from 10 to 600 mJ / cm using an i-line stepper NSR-2005i9C (manufactured by Nikon Corporation). ２ With this exposure dose, 20 mJ / cm² ２ The wafers were exposed at intervals. A mask with a 5 μm line and space (L&S) was used during exposure. After exposure, the wafers were developed under the development conditions determined in (a) above, and placed in an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.) at room temperature. The temperature was then raised to 350°C at 3.5°C / min with an oxygen concentration of 20 ppm or less, and the wafers were heat-treated at 350°C for 1 hour. When the temperature dropped below 50°C, the wafers were removed to produce a heat-resistant resin coating (cured film). The openings of the obtained cured film were measured using an optical microscope, and the exposure amount at which a 1:1 ratio of 5 μm L&S was formed was determined as the exposure condition.

[0167] (c) Measurement of dimensional uniformity Coating and pre-baking were performed under the conditions described in "(1) Edge cutability evaluation" above, and the obtained pre-baked film was exposed under the exposure conditions determined in (b) above. During exposure, a mask with 5 μm L&S was used, and 11 locations were exposed horizontally in the center of the wafer. After exposure, the wafer was developed under the development conditions determined in (a) above, placed in an inert oven CLH-21CD-S (manufactured by Koyo Thermo Systems Co., Ltd.) at room temperature, and the temperature was raised to 350°C at 3.5°C / min with an oxygen concentration of 20 ppm or less, and heat treatment was performed at 350°C for 1 hour. When the temperature fell below 50°C, the wafer was removed and a heat-resistant resin coating (cured film) was produced.

[0168] Eleven 5 μm L&S measurements were taken on the wafer surface of the obtained cured film using an optical microscope. The difference between the minimum and maximum measured dimensions was defined as the in-plane uniformity of dimensions. A value of 0 μm or more and less than 0.50 μm was rated as excellent (A), 0.50 μm or more and less than 0.70 μm was rated as good (B), 0.70 μm or more and less than 1.00 μm was rated as acceptable (C), and 1.00 μm or more was rated as poor (D).

[0169] <Synthesis Examples> (Synthesis Example 1) Synthesis of hydroxyl group-containing diamine compound (a) 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (trade name BAHF, manufactured by Central Glass Co., Ltd.) was dissolved in 100 mL of acetone containing 17.4 g (0.3 mol) of propylene oxide and cooled to -15°C. A solution of 20.4 g (0.11 mol) of 3-nitrobenzoyl chloride dissolved in 100 mL of acetone was added dropwise to this solution. After the addition was complete, the mixture was reacted at -15°C for 4 hours and then returned to room temperature. The precipitated white solid was filtered off and vacuum-dried at 50°C.

[0170] 30 g of solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve. 2 g of 5% palladium-carbon was added. Hydrogen was then introduced using a balloon, and the reduction reaction was carried out at room temperature. After approximately 2 hours, the reaction was terminated when it was confirmed that the balloon no longer deflated. After the reaction was complete, the palladium compound catalyst was removed by filtration, and the mixture was concentrated using a rotary evaporator to obtain a hydroxyl group-containing diamine compound (a) represented by the following formula.

[0171]

[0172] (Synthesis Example 2) Synthesis of hydroxyl group-containing acid anhydride (b) Under a dry nitrogen stream, 18.3 g (0.05 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (BAHF) and 34.2 g (0.3 mol) of allyl glycidyl ether were dissolved in 100 g of γ-butyrolactone (GBL) and cooled to -15°C. To this, 22.1 g (0.11 mol) of trimellitic anhydride chloride dissolved in 50 g of GBL was added dropwise, ensuring that the temperature of the reaction mixture did not exceed 0°C. After the addition was complete, the mixture was reacted at 0°C for 4 hours. This solution was concentrated using a rotary evaporator and added to 1 L of toluene to obtain hydroxyl group-containing acid anhydride (b) represented by the following formula.

[0173]

[0174] (Synthesis Example 3) Synthesis of resin (A) (A-1) Under a dry nitrogen stream, 13.6 g (0.0225 mol) of the hydroxyl group-containing diamine (a) obtained in Synthesis Example 1 was dissolved in 50 g of N-methyl-2-pyrrolidone (NMP). 17.5 g (0.025 mol) of the hydroxyl group-containing acid anhydride (b) obtained in Synthesis Example 2 was added together with 30 g of pyridine, and the mixture was reacted at 40°C for 2 hours. Then, 0.58 g (0.005 mol) of 4-aminophenylacetylene was added as a terminal encapsulant, and the mixture was reacted at 40°C for another 1 hour. After the reaction was complete, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 80°C for 72 hours to obtain the polyimide precursor resin (A) (A-1). The weight-average molecular weight (Mw) of the polymer was determined using a Waters 2690-996 GPC (gel permeation chromatography) instrument (manufactured by Waters Japan Ltd.). The measurement was performed using NMP as the developing solvent, and the weight-average molecular weight (Mw) was determined in polystyrene equivalents, confirming that it was within the range of 10,000 to 50,000.

[0175] (Synthesis Example 4) (A) Synthesis of resin (A-2) Under a dry nitrogen stream, 15.13 g (0.040 mol) of the hydroxyl group-containing diamine compound (a) obtained in Synthesis Example 1 and 1.24 g (0.005 mol) of 1,3-bis(3-aminopropyl)tetramethyldisiloxane (SiDA) were dissolved in 50 g of N-methyl-2-pyrrolidone (NMP). 15.51 g (0.05 mol) of 3,3',4,4'-diphenyl ether tetracarboxylic anhydride (manufactured by Manac Co., Ltd., ODPA) was added together with 21 g of NMP, and the mixture was reacted at 20°C for 1 hour, then at 50°C for 2 hours. Subsequently, a solution of 14.7 g (0.1 mol) of N,N-dimethylformamide diethyl acetal diluted with 15 g of NMP was added dropwise over 10 minutes. After the addition, the mixture was stirred at 40°C for 3 hours. After the reaction was complete, the solution was added to 2 L of water, and the polymer solid precipitate was collected by filtration. The polymer solid was dried in a vacuum dryer at 80°C for 72 hours to obtain polyimide precursor (A) resin (A-2). The weight-average molecular weight was measured by the same method as in Synthesis Example 3 and confirmed to be within the range of 10 to 100,000.

[0176] (Synthesis Example 5) Synthesis of phenolic resin Under a dry nitrogen stream, 70.2 g (0.65 mol) of m-cresol, 37.8 g (0.35 mol) of p-cresol, 75.5 g (0.93 mol) of 37 wt% formaldehyde aqueous solution (formaldehyde), 0.63 g (0.005 mol) of oxalic acid dihydrate, and 264 g of methyl isobutyl ketone were charged. The mixture was then immersed in an oil bath, and the reaction was carried out by polycondensation for 4 hours while refluxing the reaction mixture. After that, the temperature of the oil bath was raised over 3 hours, and then the pressure in the flask was reduced to 30-50 mmHg to remove volatile components, and the dissolved resin was cooled to room temperature to obtain phenolic resin. The weight-average molecular weight was measured by the same method as in Synthesis Example 3 and was 3,500.

[0177] (Synthesis Example 6) (D-1) Synthesis of 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound Under a dry nitrogen stream, 21.22 g (0.05 mol) of TrisP-PA (trade name, manufactured by Honshu Chemical Industry Co., Ltd.), 26.86 g (0.10 mol) of 4-naphthoquinone diazide sulfonylic acid chloride, and 13.43 g (0.05 mol) of 4-naphthoquinone diazide sulfonylic acid chloride were dissolved in 50 g of 1,4-dioxane and brought to room temperature. 15.18 g of triethylamine mixed with 50 g of 1,4-dioxane was added dropwise so that the temperature in the system did not exceed 35°C. After addition, the mixture was stirred at 30°C for 2 hours. The triethylamine salt was filtered, and the filtrate was added to water. The precipitated sediment was then collected by filtration. This precipitate was dried in a vacuum dryer to obtain (D-1) 1,2-naphthoquinone-2-diazide-4-sulfonic acid ester compound (D-1), represented by the following formula.

[0178]

[0179] (Synthesis Example 7) Synthesis of (D-2) 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound Under a dry nitrogen stream, 15.31 g (0.05 mol) of TrisP-HAP (trade name, manufactured by Honshu Chemical Industry Co., Ltd.) and 40.28 g (0.15 mol) of 5-naphthoquinone diazide sulfonylic acid chloride were dissolved in 450 g of 1,4-dioxane and allowed to rise to room temperature. Except for this, the (D-2) 1,2-naphthoquinone-2-diazide-5-sulfonic acid ester compound (D-2), represented by the following formula, was obtained in the same manner as in Synthesis Example 2.

[0180]

[0181] The other components used in the examples and comparative examples are (B1) organic solvent, (B2) organic solvent, (C) component, and (E) organic solvent, which are listed below. Note that the vapor pressure referred to here is the vapor pressure at 20°C. (B1) Organic solvents: 2-Methoxyethanol (vapor pressure 0.82 kPa), Propylene glycol monomethyl ether (PGME) (vapor pressure 1.20 kPa), Isopropyl alcohol (vapor pressure 4.30 kPa) (B2) Organic solvents: γ-Butyrolactone (GBL) (vapor pressure 0.20 kPa), Ethyl lactate (EL) (vapor pressure 0.30 kPa), N-methyl-2-pyrrolidone (NMP) (vapor pressure 0.04 kPa) (C) Components: 3-Methoxy-N,N-dimethylpropanamide (MPA) (vapor pressure 0.08 kPa), N-methyl-2-pyrrolidone (NMP) (vapor pressure 0.04 kPa), 2-Butoxyethanol (vapor pressure 0.10 kPa), N,N-dimethylisobutylamide (DMIB) (vapor pressure 0.36 kPa) (E) Organic solvents: Acetone (vapor pressure 24.5 kPa), methanol (vapor pressure 13.2 kPa), isopropyl alcohol (vapor pressure 4.3 kPa) [Examples 1-11, Comparative Examples 1-9] Varnishes were prepared by adding (B1) organic solvent, (B2) organic solvent, and (C) component in the masses shown in Table 1 to 10 g of any of the (A) resins obtained in Synthesis Examples 3-5 above. These properties were measured using the evaluation method described above. The measurement results are shown in Table 2.

[0182]

[0183]

[0184] [Examples 12-21] To 10 g of resin (A-1) obtained in Synthesis Example 3, (B1) organic solvent, (B2) organic solvent, (C) component, (D) photosensitive agent obtained in Synthesis Examples 6-7, and (E) organic solvent were added in the masses shown in Table 3 to prepare varnishes. These properties were measured using the evaluation method described above. The measurement results are shown in Table 4.

[0185]

[0186]

[0187] 1a: Die pad 1b: Lead 1: 1a (die pad) + 1b (lead) 2: Semiconductor element 3: Primer layer 4: Wire 5: Resin encapsulation layer 6: Silicon wafer 7: Al pad 8: Passivation film 9: Insulating film 10: Metal film 11: Metal wiring 12: Insulating film 13: Barrier metal 14: Scribe line 15: Solder bump 16: Substrate 17: Insulating film 18: Insulating film 19: Metal film 20: Metal wiring 21: Metal wiring 22: Electrode 23: Encapsulation resin 24: Semiconductor chip 25: Al pad 26: Passivation film 27: Insulating film 28: Metal film 29: Metal wiring 30: Insulating film 31: Barrier metal 32: Solder bump 33: Encapsulation resin

Claims

1. A resin composition comprising (A) one or more resins selected from the group consisting of polyimide, polyimide precursors, polybenzoxazoles, polybenzoxazole precursors, and copolymers thereof; (B1) an organic solvent having a vapor pressure of 0.40 kPa or more and less than 2.00 kPa at 20°C; (B2) an organic solvent having a vapor pressure of 0.10 kPa or more and less than 0.40 kPa at 20°C; and (C) an amide group-containing amine compound having a vapor pressure of 0.01 kPa or more and less than 0.10 kPa at 20°C, wherein when the mass of the organic solvent (B1) is BW1 and the mass of the organic solvent (B2) is BW2, 0.10 ≤ BW1 / (BW1 + BW2) ≤ 0.

40.

2. The resin composition according to claim 1, wherein the (B1) organic solvent is a glycol ether-based solvent.

3. The resin composition according to claim 1, wherein when the mass of component (C) is denoted as CW, the CW relative to the mass of the resin composition is 0.0050 or more and 0.050 or less.

4. The resin composition according to claim 1, further comprising (D) a photosensitive agent.

5. The resin composition according to claim 1, further comprising (E) an organic solvent having a vapor pressure of 6.0 kPa or more and less than 25.0 kPa at 20°C.

6. The resin composition according to claim 5, wherein when the mass of the (E) organic solvent is denoted as EW, the ratio of EW to the mass of the resin composition is 0.00003 or more and 0.00010 or less.

7. A cured film obtained by curing the resin composition according to any one of claims 1 to 6.

8. A method for producing a cured film, comprising the steps of: applying the resin composition described in claim 1 onto a substrate by a spin coating method and drying it to form a pre-baked film; an exposure step of exposing the pre-baked film through a mask; a development step of developing the exposed pre-baked film; and a heat treatment step of heat treating the developed pre-baked film.

9. An electronic component or semiconductor device having the cured film described in claim 7.

10. A semiconductor device wherein the cured film according to claim 7 is disposed on a sealing resin substrate on which a semiconductor chip is arranged, as an interlayer insulating film between redistributions.

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