Atomic layer deposition apparatus

Abstract

The present invention relates to an atomic layer deposition apparatus. The atomic layer deposition apparatus according to an embodiment of the present invention comprises: a gas supply assembly supplying a source gas, a reaction gas, and a purge gas, and including a purge gas supply module through which the purge gas flows, a reaction gas supply module through which the reaction gas flows, and a source gas supply module through which the source gas flows; a showerhead assembly including a gas inlet, through which at least one of the source gas, the reaction gas, or the purge gas flows in, and a showerhead body for distributing the gas that flows in from the gas inlet; a chamber part that is disposed below the showerhead assembly and has an inner space formed therein; and a substrate transfer module for positioning a substrate in the inner space of the chamber part.

Description

Atomic layer deposition device

[0001] The present invention relates to an atomic layer deposition apparatus, and more specifically, to an atomic layer deposition apparatus in which an atomic layer is deposited on one surface of a substrate.

[0002]

[0003] Generally, methods for depositing a thin film of a predetermined thickness on a substrate such as a semiconductor substrate or glass include physical vapor deposition (PVD), which utilizes physical collisions such as sputtering, and chemical vapor deposition (CVD), which utilizes chemical reactions.

[0004] Recently, as the design rules of semiconductor devices have become increasingly fine, there is a demand for thin films with fine patterns, and the step difference in the area where the thin film is formed is also becoming very large. Consequently, the use of atomic layer deposition (ALD) is increasing, as it can not only form fine patterns of atomic layer thickness very uniformly but also has excellent step coverage.

[0005]

[0006] The atomic layer deposition apparatus according to an embodiment of the present invention aims to provide an atomic layer deposition apparatus capable of improving thin film process dispersion.

[0007]

[0008] An atomic layer deposition apparatus according to one aspect of an embodiment of the present invention comprises: a gas supply assembly including a purge gas supply module through which the purge gas flows, a reaction gas supply module through which the reaction gas flows, and a source gas supply module through which the source gas flows; a shower head assembly including a gas inlet through which at least one of the source gas, the reaction gas, and the purge gas flows, and a shower head body that distributes the gas introduced from the gas inlet; a chamber portion disposed below the shower head assembly and having an internal space formed therein; and a substrate transfer module that positions a substrate in the internal space of the chamber portion. Any one of the source gas supply module, the reaction gas supply module, and the purge gas supply module of the gas supply assembly comprises a gas supply line through which the gas of any one supply module flows and a pressure maintaining module disposed on the gas supply line, and any one gas supply module supplies the gas to the gas inlet side of the shower head assembly through the pressure maintaining module.

[0009] Additionally, the pressure maintaining module includes a supply section that receives the gas from any one of the gas supply modules, a body section through which the gas supplied to the supply section flows, and an exhaust section through which the gas is discharged from the body section, wherein the supply pressure (P1), which is the pressure of the gas supplied from the supply section to the body section, and the exhaust pressure (P2), which is the pressure of the gas discharged from the body section to the exhaust section, may be different from each other.

[0010] Additionally, at least one of the supply portion and the exhaust portion is formed on one side of the body portion and is positioned spaced apart from the center of one side of the body portion, and at least one of the supply portion and the exhaust portion further includes a gas guide unit, and the gas guide unit may be formed in a shape that extends from any one selected of the supply portion and the exhaust portion and protrudes into the interior of the body portion.

[0011] Additionally, the gas guide unit further comprises a first coating layer formed on at least a portion thereof and containing a hydrophobic material, wherein the first coating layer may be formed on the side closer to the inner wall of the body portion among the other portions symmetrical with respect to the center of the gas guide unit and the portion thereof.

[0012] Additionally, the body part further comprises a second coating layer formed on at least a portion of the inner wall of the body part and containing a hydrophobic material, wherein the second coating layer may be formed on the side closer to the first coating layer among positions parallel to the first coating layer.

[0013] Additionally, the gas guide unit is formed in a hollow column shape, and a neck portion is formed in at least a part of the gas guide unit, and the diameter of the neck portion may be smaller than the diameter of the supply portion (Lin) or the diameter of the exhaust portion (Lout).

[0014] In addition, the neck portion of the gas guide unit may be formed at a position spaced apart from the center portion of the body of the gas guide unit in the vertical direction, and may be formed at a position closer to one side of the body portion where the gas guide unit is extended than to the other side of the body portion where the gas guide unit is not formed.

[0015] In addition, the gas guide unit may further include a third coating layer formed on the inner surface of one side of the body portion on which the gas guide unit is extended, and comprising a hydrophobic material.

[0016] In addition, the height of the third coating layer coated from one side of the body portion to the other side may be formed to be 20% or less of the height of the body portion.

[0017] Additionally, the gas guide unit further includes a fourth coating layer comprising a hydrophobic material formed from the neck portion of the gas guide unit to one side of the body portion to which the gas guide unit is extended, and further includes a fifth coating layer comprising a hydrophobic material formed in a direction away from one side of the body portion to which the gas guide unit is extended relative to the neck portion, and the height of the fifth coating layer may be formed to be 20% or less of the height of the gas guide unit.

[0018] Additionally, the shower head body comprises a gas flow section through which gas introduced from the gas inlet flows, and at least one discharge hole formed below the gas flow section through which the introduced gas is divided and discharged, and at least a portion of the discharge hole may be coated with a coating layer containing a hydrophobic material.

[0019] Additionally, a neck portion is formed in at least a part of the discharge hole, and the discharge hole is formed with an upper discharge hole portion on the upper side and a lower discharge hole portion on the lower side based on the upper and lower directions of the shower head body relative to the neck portion, and the diameter of the upper discharge hole portion gradually decreases toward the neck portion, and the diameter of the lower discharge hole portion can gradually increase as it moves away from the neck portion.

[0020] In addition, the coating layer containing the above hydrophobic material may further include an inner surface coating layer coating the inner surface below the discharge hole and a lower surface coating layer coating the lower surface of the discharge hole facing the chamber portion.

[0021] In addition, the coating layer may comprise at least one selected from the group consisting of SiC (Silicon Carbide) (SiC), Teflon AF (Amophous fluoropolymer), PVDF (Polyvinylidene Fluoride) (CH2CF₂)n, PTFE (Polytetrafluoroethylene) (C₂F₄)n, PDMS (Polydimethylsiloxane) (CH₃2SiO}n, Parylene (C8H8)n, ODTS (Octadecyltrichlorosilane): (CH₃3(CH₂2)17SiCl₃3), PCTFE (Polychlorotrifluoroethylene) (C₂2ClF₃3)n, Boron Nitride (BN): BN, and FDTS (Perfluorooctyltrichlorosilane) C8F17SiCl3.

[0022] Additionally, the shower head body further includes a pumping module positioned above the chamber portion and below the chamber portion to suck gas from the chamber portion; and one side of the pumping module may include a pumping channel formed to extend downward from the internal space of the chamber portion and communicating with the internal space of the chamber portion, and a pumping unit installed in the pumping channel to provide negative pressure.

[0023]

[0024] According to an embodiment of the present invention, an atomic layer deposition apparatus capable of improving thin film process dispersion can be provided.

[0025]

[0026] FIG. 1 is a diagram showing the configuration of an atomic layer deposition apparatus according to an embodiment of the present invention.

[0027] Figure 2 is a drawing showing the internal space of the showerhead assembly of the atomic layer deposition apparatus of Figure 1.

[0028] Figure 3 is an enlarged view of area A of Figure 2.

[0029] FIG. 4 is a diagram showing the configuration of an atomic layer deposition apparatus according to another embodiment of the present invention.

[0030] Figure 5 is a drawing showing an example of the pressure maintenance module of Figure 4.

[0031] Figure 6 is a drawing showing another example of the pressure maintenance module of Figure 4.

[0032] Figure 7 is a drawing showing another example of the pressure maintenance module of Figure 4.

[0033] Figure 8 is a drawing showing another example of the pressure maintenance module of Figure 4.

[0034]

[0035] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0036] Although terms such as "first," "second," etc., are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used merely to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may also be the second component within the technical scope of the present invention.

[0037] Throughout the specification, the same reference numerals refer to the same components.

[0038] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and as will be fully understood by those skilled in the art, various technical interlocking and operation are possible, and each embodiment may be implemented independently of one another or together in an interlocking relationship.

[0039] Meanwhile, potential effects that may be expected from the technical features of the present invention that are not specifically mentioned in the specification of the present invention are treated as described in the specification, and since the embodiments are provided to more completely explain the present invention to those with average knowledge in the art, the contents illustrated in the drawings may be exaggerated compared to the actual embodiment of the invention, and detailed descriptions of configurations that are judged to unnecessarily obscure the gist of the present invention are omitted or described briefly.

[0040] Embodiments of the present invention will be described in detail below with reference to the attached drawings.

[0041] FIG. 1 is a drawing showing the configuration of an atomic layer deposition apparatus according to an embodiment of the present invention, FIG. 2 is a drawing showing the internal space of the showerhead assembly of the atomic layer deposition apparatus of FIG. 1, and FIG. 3 is an enlarged drawing of area A of FIG. 2.

[0042] First, referring to FIG. 1, the atomic layer deposition apparatus (1) according to an embodiment of the present invention is an atomic layer deposition apparatus in which a substrate transfer module (not shown) positions a substrate in the internal space of a chamber (300), and after the substrate is positioned, one of a source gas, a reaction gas, and a purge gas is selectively supplied to the substrate side to deposit an atomic layer.

[0043] More specifically, the atomic layer deposition apparatus (1) comprises a chamber portion (300) in which an internal space is formed, a showerhead assembly (200) that distributes and supplies source gas, reaction gas, and purge gas to the side of the chamber portion (300), a gas supply assembly (100) that supplies source gas, reaction gas, and purge gas to the showerhead assembly (200), and pumping modules (400) for discharging the source gas, reaction gas, and purge gas to the outside from the internal space of the chamber portion (300).

[0044] At this time, the gas supply assembly (100) includes a purge gas supply module (130) through which purge gas flows, a reaction gas supply module (120) through which the reaction gas flows, and a source gas supply module (110) through which the source gas flows.

[0045] And, one side of the pumping module (400) is in communication with the internal space of the chamber section (500) and includes a pumping channel (not shown) that extends downward from the internal space and a pumping unit (not shown) installed in the pumping channel to provide negative pressure.

[0046] For example, the atomic layer deposition apparatus (1) may be a Top-inflow / Bottom-outflow type in which a gas supply assembly (100) is located above a showerhead assembly (200), a chamber section (300) is positioned below a showerhead assembly (200), and a pumping module (400) for discharging gas from the internal space of the chamber section (300) is positioned below the chamber section (300), but is not necessarily limited thereto.

[0047]

[0048] The configuration of the shower head assembly (200) according to an embodiment of the present invention will be described in more detail below.

[0049]

[0050] Referring to FIG. 2, the shower head assembly (200) includes a gas inlet (210) that receives one gas from a gas supply assembly (100) and a shower head body (220) that distributes the gas introduced from the gas inlet (210).

[0051] Additionally, the shower head body (220) of the shower head assembly (200) includes a gas flow section (2230) through which gas introduced from the gas inlet (210) flows, and at least one discharge hole (2210) formed on the lower side of the gas flow section (2230) through which the flowing gas is divided and discharged.

[0052] More specifically, referring to FIG. 3, a neck portion (2212) is formed in at least a part of the discharge hole (2210), and the discharge hole (2210) has an upper discharge hole portion (2211) formed on the upper side relative to the upper and lower directions of the shower head body (220) with respect to the neck portion (2212) and communicates with the gas flow portion (2230), and a lower discharge hole portion (2213) formed on the lower side and communicates with the chamber portion (300).

[0053] At this time, the diameter of the upper side (2211) of the discharge hole gradually decreases toward the neck portion (2212), and the diameter of the lower side (2213) of the discharge hole gradually increases as it moves away from the neck portion (2212). Additionally, for example, the neck portion (2212) may be formed at a position spaced apart from the center portion in the vertical direction of the discharge hole (2210) and at a position closer to the gas flow portion (2230) than to the chamber portion (300).

[0054] And, an atomic layer deposition apparatus (1) according to one embodiment of the present invention further includes a coating layer (500) formed on the surface of a discharge hole (2210) and comprising a hydrophobic material for suppressing the deposition of particles or an oxide film.

[0055] At this time, the coating layer (500) includes an inner surface coating layer (510) that coats the inner surface of the lower side (2213) of the discharge hole and a lower surface coating layer (520) that coats the lower surface of the discharge hole (2210) facing the chamber part (300), and at least a portion of the surface of the neck part (2212) may also be included in the coating layer (500).

[0056] In addition, the coating layer (500, 510, 520, 600, 610, 620, 630, 640, 650) may include at least one selected from the group consisting of SiC (Silicon Carbide) (SiC), Teflon AF (Amophous fluoropolymer), PVDF (Polyvinylidene Fluoride) (CH2CF2)n, PTFE (Polytetrafluoroethylene) (C2F4)n, PDMS (Polydimethylsiloxane) (CH32SiO)n, Parylene (C8H8)n, ODTS (Octadecyltrichlorosilane): (CH3(CH2)17SiCl3), PCTFE (Polychlorotrifluoroethylene) (C2ClF3)n, Boron Nitride (BN): BN, and FDTS (Perfluorooctyltrichlorosilane) C8F17SiCl3.

[0057]

[0058] Hereinafter, an atomic layer deposition apparatus according to another embodiment of the present invention will be described.

[0059] FIG. 4 is a diagram showing the configuration of an atomic layer deposition apparatus according to another embodiment of the present invention, and FIG. 5 is a diagram showing one example of a pressure maintaining module of FIG. 4. Additionally, FIG. 6 is a diagram showing another example of a pressure maintaining module of FIG. 4, FIG. 7 is a diagram showing yet another example of a pressure maintaining module of FIG. 4, and FIG. 8 is a diagram showing yet another example of a pressure maintaining module of FIG. 4.

[0060] The atomic layer deposition apparatus according to another embodiment of the present invention differs only in the configuration of the pressure maintaining module (140) and the atomic layer deposition apparatus (1) according to one embodiment of the present invention, but is substantially identical in other configurations to the configuration of the atomic layer deposition apparatus (1) shown in FIGS. 1 to 3; therefore, the following description will focus on the characteristic parts of this embodiment.

[0061] First, referring to FIG. 4, the source gas supply module (110) includes a source gas supply line (111) through which the source gas flows and a pressure maintaining module (140) placed on the source gas supply line (111).

[0062] And, the source gas supply module (110) supplies source gas to the gas inlet (210) of the shower head assembly (200) via the pressure maintenance module (140).

[0063]

[0064] The configuration of the pressure maintenance module (140) according to an embodiment of the present invention will be described in more detail below.

[0065] First, referring to FIG. 5, a pressure maintenance module (140) according to one embodiment of the present invention includes a supply unit (1401) that receives source gas from a source gas supply module (110), a body unit (1402) through which the source gas supplied from the supply unit (1401) flows, and an exhaust unit (1403) through which the source gas is discharged from the body unit (1402).

[0066] At this time, at least one of the supply section (1401) and the exhaust section (1403) is formed on one side of the body section (1402) and is positioned spaced apart from the center of one side of the body section (1402). In one example, the supply section (1401) may be formed on one side of the body section (1402) and the exhaust section (1403) may be formed on the other side of the body section (1402), wherein the supply section (1401) is positioned spaced apart from the center of one side of the body section (1402) and the exhaust section (1403) is positioned spaced apart from the center of the other side of the body section. In another example, the supply section (1401) and the exhaust section (1403) may be formed together on one side or the other side of the body section (1402). At this time, the centers of the supply section (1401) and the exhaust section (1403) may be symmetrically positioned at an equal distance from the center of one side or the other side of the body section (1402), but are not necessarily limited thereto.

[0067] According to the proposed embodiment, the supply pressure (P1), which is the pressure of the gas supplied from the supply unit (1401) to the body unit (1402), and the exhaust pressure (P2), which is the pressure of the gas discharged from the body unit (1402) to the exhaust unit (1403), are different from each other, and preferably, the exhaust pressure (P2) of the exhaust unit (1403) is greater than the supply pressure (P1) of the supply unit (1401).

[0068]

[0069] In another example, referring to FIG. 6, either of the supply section (1401) and the exhaust section (1403) of the pressure maintenance module (140) further includes a gas guide unit (1404) formed in a hollow column shape. In one example, the gas guide unit (1404) may be formed in a shape that extends from the exhaust section (1403) and protrudes into the interior of the body section (1402). In another example, the gas guide unit (1404) may be formed in a shape that extends from the supply section (1401) and protrudes into the interior of the body section (1402), and

[0070] Additionally, a neck portion (1404b) may be formed in at least a part of the gas guide unit (1404). For example, it may be formed at a position spaced apart from the center portion of the body of the gas guide unit (1404) in the vertical direction, and closer to one side of the body portion (1402) where the gas guide unit (1404) is extended than to the other side of the body portion (1402) where the gas guide unit (1404) is not formed.

[0071] At this time, the diameter of the neck portion (1404b) is smaller than the diameter (Lin, Lout) of the supply portion (1401) or exhaust portion (1403) connected in contact with the gas guide unit (1404).

[0072]

[0073] As another example, referring to FIG. 7, the pressure maintaining module (140) further comprises a coating layer (600) containing a hydrophobic material. The coating layer (600) is formed on at least a portion of the gas guide unit (1404) and may further comprise a first coating layer (610), the first coating layer (610) may be formed on the side closest to the inner wall of the body portion (1404) among the other portions symmetrical with respect to the center of the gas guide unit (1404) and the portion of the gas guide unit (1404).

[0074] Additionally, the coating portion (600) may further include a second coating layer (620) formed on at least a portion of the inner wall of the body portion (1402), and the second coating layer (620) may be formed on the side closest to the first coating layer (610) among the positions where the position of the first coating layer (610) formed on the portion of the inner wall of the body portion (1402) and the position of the first coating layer (610) formed on the gas guide unit (1404) are parallel to each other.

[0075] Additionally, the coating layer (600) may further include a third coating layer (630) formed on the inner surface of one side of the body portion (1402) connected in contact with the gas guide unit (1404). At this time, the height of the third coating layer (630) coated from one side of the body portion (1402) toward the other side may be formed to be 20% or less of the height of the body portion (1402).

[0076] Additionally, the coating layer (600) may further include a fourth coating layer (640) formed from the neck portion (1404b) of the gas guide unit (1404) to the lower side (1404c) of the gas guide unit that contacts the body portion (1402).

[0077] It may further include a fifth coating layer (650) formed on the upper side (1404a) of the gas guide unit and extending away from one side of the body part (1402) connected in contact with the gas guide unit (1404) based on the neck part (1404b), and the height of the fifth coating layer (650) may be formed to be 20% or less of the height of the gas guide unit (1404).

[0078]

[0079] According to the proposed embodiment, the gas guide unit (1404) and the discharge hole (2210) can increase the supply pressure of the gas to form a compressed gas, thereby improving process efficiency, and the coating layer (500, 600) prevents the adsorption of oxide films or particles, thereby increasing the maintenance (PM, Preventive Maintenance) cycle of the equipment.

[0080] In addition, as gas compression and gas transport become more stable, process dispersion is improved and process speed is also enhanced, thereby improving thin film dispersion and reducing process defects.

[0081]

[0082] A pressure maintenance module (140) of an atomic layer deposition apparatus (1) according to one embodiment of the present invention may also be formed in a reaction gas supply module (120) and a purge gas supply module (130), and, for example, a source gas supply module (110), a reaction gas supply module (120), and a purge gas supply module (130) may share a single pressure maintenance module (140).

[0083] In another example, two gas supply modules selected from a group consisting of a source gas supply module (110), a reaction gas supply module (120), and a purge gas supply module (130) may share a single pressure maintaining module, and preferably, the source gas supply module (110) and the purge gas supply module (130) may share a single pressure maintaining module (140), and additional pressure maintaining modules may also be formed in the reaction gas supply module (120).

[0084] As another example, a pressure maintaining module may be formed in each of the source gas supply module (110), reaction gas supply module (120), and purge gas supply module (130).

[0085]

[0086] An atomic layer deposition apparatus (1) according to one embodiment of the present invention may include a purge gas storage unit (not shown) connected to a purge gas supply module (130) to supply purge gas, a reaction gas storage unit (not shown) connected to a reaction gas supply module (120) to supply reaction gas, and a source gas storage unit (not shown) connected to a source gas supply module (110) to supply source gas.

[0087] Additionally, the pumping module (400) is connected to a pumping device (not shown) that provides negative pressure, and the pumping device allows the reaction gas, the source gas, and the purge gas flowing through the pumping module (400) to be discharged to the outside of the chamber (300).

[0088] At this time, the source gas is, for example, TMA (Trimethylaluminum), TDMAHf (Tetrakis(dimethylamido)hafnium), TEMAHF (Tetrakis(ethylmethylamido)hafnium), TEMAZr (Tetrakis(ethylmethylamido)zirconium), TDMAZr (Tetrakis(dimethylamido)zirconium), DEZ (Diethylzinc), It may include Tetrakis(ethylbutoxy)titanium, TDMATi (Tetrakis(dimethylamido)titanium), TDMASn (Tetrakis(dimethylamido)tin), TEMATi (Tetrakis(ethylmethylamido)titanium), etc.

[0089] When using the above source gas, when the source gas is supplied through the pressure maintenance module (140), the heavier the organic molecule of the precursor material, the more the process dispersion is improved and the process speed can also be increased. That is, for example, compared to SiH4 gas, the dispersion improvement effect can be superior in heavy organic molecules such as TMA (Trimethyl Aluminum) and TDMAHf.

[0090] Meanwhile, the purge gas may include, for example, N2, He, N2 / He mixture, N2 / H2 mixture, He / H2 mixture, H2, D2 (deuterium), Ar, Ar / H2 mixture, etc.

[0091] In this case, the lighter the material of the purge gas, the better the insulation function, which has the effect of reducing process defects caused by process gas mixing. That is, using N2, He, N2 / He mixture, N2 / H2 mixture, He / H2 mixture, H2, or D2 (deuterium) gas may provide better insulation function compared to Ar gas.

[0092]

[0093] Although preferred embodiments of the present invention have been described above, the present invention is not limited thereto and can be implemented with various modifications within the scope of the claims, the detailed description of the invention, and the attached drawings, and it is obvious that such modifications also fall within the scope of the present invention.

[0094]

[0095] The modes for carrying out the invention are described together in the best mode for carrying out the invention above.

[0096]

[0097] The present invention relates to an atomic layer deposition apparatus, and has repeatability and industrial applicability in an atomic layer deposition apparatus for forming an atomic layer on a substrate.

Claims

1. In an atomic layer deposition apparatus, A gas supply assembly comprising a source gas, a reaction gas, and a purge gas, and including a purge gas supply module through which the purge gas flows, a reaction gas supply module through which the reaction gas flows, and a source gas supply module through which the source gas flows; A showerhead assembly comprising a gas inlet into which at least one of the source gas, the reaction gas, and the purge gas is introduced, and a showerhead body that distributes the gas introduced from the gas inlet; A chamber portion disposed on the lower side of the above showerhead assembly and having an internal space formed therein; and A substrate transfer module for positioning a substrate in the internal space of the chamber portion; comprising Any one of the source gas supply module, the reaction gas supply module, and the purge gas supply module of the above gas supply assembly comprises a gas supply line through which the gas of any one of the supply modules flows and a pressure maintaining module disposed on the gas supply line. An atomic layer deposition apparatus characterized in that any one of the above gas supply modules supplies the gas to the gas inlet side of the showerhead assembly via the pressure maintaining module.

2. In Paragraph 1, The pressure maintaining module comprises a supply section that receives the gas from any one of the gas supply modules, a body section through which the gas supplied to the supply section flows, and an exhaust section through which the gas is discharged from the body section. An atomic layer deposition apparatus characterized by the fact that the supply pressure (P1), which is the pressure of the gas supplied from the supply section to the body section, and the exhaust pressure (P2), which is the pressure of the gas discharged from the body section to the exhaust section, are different from each other.

3. In Paragraph 2, At least one of the supply portion and the exhaust portion is formed on one side of the body portion and is positioned spaced apart from the center of one side of the body portion, and At least one of the above supply unit and the above exhaust unit further includes a gas guide unit, and An atomic layer deposition apparatus characterized in that the above gas guide unit is formed in a shape that extends from either the supply part or the exhaust part and protrudes into the interior of the body part.

4. In Paragraph 3, The above gas guide unit further comprises a first coating layer formed on at least a portion thereof and comprising a hydrophobic material, and An atomic layer deposition apparatus characterized in that the first coating layer is formed on the side closer to the inner wall of the body portion among a part of the gas guide unit and another part symmetrical with respect to the center of the gas guide unit.

5. In Paragraph 4, It further comprises a second coating layer formed on at least a portion of the inner wall of the body portion and comprising a hydrophobic material, and An atomic layer deposition apparatus characterized in that the second coating layer is formed on the side closer to the first coating layer among positions parallel to the first coating layer.

6. In Paragraph 3, The above gas guide unit is formed in the shape of a hollow column, and An atomic layer deposition apparatus characterized in that a neck portion is formed in at least a part of the gas guide unit, and the diameter of the neck portion is smaller than the diameter of the supply portion (Lin) or the diameter of the exhaust portion (Lout).

7. In Paragraph 6, An atomic layer deposition apparatus characterized in that the neck portion of the gas guide unit is formed at a position spaced apart from the central portion in the vertical direction of the body of the gas guide unit, and is formed at a position closer to one side of the body portion where the gas guide unit is extended than to the other side of the body portion where the gas guide unit is not formed.

8. In Paragraph 3, An atomic layer deposition apparatus characterized by further including a third coating layer comprising a hydrophobic material, formed on the inner surface of one side of the body portion on which the above-mentioned gas guide unit is extended.

9. In Paragraph 8, An atomic layer deposition apparatus characterized in that the height of the third coating layer, which is coated from one side of the body portion toward the other side, is formed to be 20% or less of the height of the body portion.

10. In Paragraph 7, The gas guide unit further comprises a fourth coating layer formed from the neck portion of the gas guide unit to one side of the body portion where the gas guide unit is extended, and including a hydrophobic material. An atomic layer deposition apparatus further comprising a fifth coating layer containing a hydrophobic material formed away from one side of the body portion where the gas guide unit is extended based on the neck portion, wherein the height of the fifth coating layer is formed to be 20% or less of the height of the gas guide unit.

11. In Paragraph 1, The shower head body comprises a gas flow section through which gas introduced from the gas inlet flows, and It includes at least one discharge hole formed on the lower side of the gas flow section, through which the introduced gas is divided and discharged. An atomic layer deposition apparatus characterized in that at least a portion of the discharge holes is coated with a coating layer containing a hydrophobic material.

12. In Paragraph 11, A neck portion is formed in at least a part of the discharge hole, and The above discharge hole is formed such that the upper side of the discharge hole is formed on the upper side relative to the neck portion and the lower side of the discharge hole is formed on the lower side relative to the upper and lower directions of the shower head body. An atomic layer deposition apparatus characterized in that the diameter of the upper side of the discharge hole gradually decreases toward the neck portion, and the diameter of the lower side of the discharge hole gradually increases as it moves away from the neck portion.

13. In Paragraph 12, An atomic layer deposition apparatus characterized in that the coating layer containing the above hydrophobic material further comprises an inner surface coating layer coating the inner surface below the discharge hole and a lower surface coating layer coating the lower surface of the discharge hole facing the chamber portion.

14. In Paragraph 11, The above coating layer comprises at least one selected from the group consisting of SiC (Silicon Carbide), Teflon AF (Amophous fluoropolymer), PVDF (Polyvinylidene Fluoride) (CH2CF2)n, PTFE (Polytetrafluoroethylene) (C2F4)n, PDMS (Polydimethylsiloxane) (CH32SiO}n, Parylene (C8H8)n, ODTS (Octadecyltrichlorosilane): (CH3(CH2)17SiCl3), PCTFE (Polychlorotrifluoroethylene) (C2ClF3)n, Boron Nitride (BN): BN, and FDTS (Perfluorooctyltrichlorosilane) C8F17SiCl3, in an atomic layer deposition apparatus.

15. In Paragraph 1, The shower head body is positioned on the upper side of the chamber portion, and It further includes a pumping module disposed below the chamber portion and sucking in gas from the chamber portion; An atomic layer deposition apparatus characterized by comprising, on one side of the pumping module, a pumping channel formed to extend downward from the internal space of the chamber portion and communicating with the internal space, and a pumping unit installed in the pumping channel to provide negative pressure.

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